Holding apparatus, substrate processing apparatus, and article manufacturing method

Abstract

The invention relates to a holding apparatus, a substrate processing apparatus, and an article manufacturing method. A holding apparatus for holding a substrate includes: a chuck configured to hold a substrate; a supply mechanism configured to supply a gas to a first space between the substrate and the chuck via a first hole provided at a first position of the chuck; an opening mechanism configured to communicate the first space and the external space with each other via a second hole provided at a second position different from the first position of the chuck; and a controller configured to control the supply mechanism and the opening mechanism such that a period in which the substrate holding by the chuck is stopped includes a period in which supply of the gas to the first space and communication between the first space and the external space are performed simultaneously.

Description

Technical Field

[0001] The present invention relates to a holding device, a substrate processing device and an article manufacturing method. Background Art

[0002] Substrate chucks are used to hold (vacuum-hold) substrates during the manufacturing process of semiconductor devices, liquid crystal display devices, and the like. Japanese Patent Publication No. 2022-177165 (Patent Document 1) discloses a technique in which, when a substrate is unloaded while vacuum is applied and clamped by a substrate chuck, gas is supplied to the space between the substrate and the chuck, thereby reducing wear on the chuck. Patent Document 1 also discloses a technique for stopping the vacuum applied to the substrate from an area outside the substrate while the substrate is clamped by the chuck.

[0003] However, in conventional techniques, if too much gas is supplied to the space between the substrate and the substrate chuck during the unloading process (when the substrate chuck stops holding the substrate), the substrate may float from the substrate chuck and slide sideways. In contrast, if the gas supply is too low, the fixation between the substrate and the substrate chuck remains, forcing the substrate to separate from the substrate chuck, causing wear to the substrate chuck. When the vacuum applied to the substrate is stopped, it takes time to fill the vacuum space with gas, which prolongs the unloading process and reduces productivity. Summary of the Invention

[0004] The present disclosure provides a technique that facilitates stopping a chuck from holding a substrate.

[0005] According to a first aspect of the present disclosure, there is provided a holding device for holding a substrate, comprising: a chuck configured to hold the substrate; a supply mechanism configured to supply gas to a first space between the substrate and the chuck via a first hole provided at a first position of the chuck; an opening mechanism configured to enable the first space and an external space to communicate with each other via a second hole provided at a second position of the chuck that is different from the first position; and a controller configured to control the supply mechanism and the opening mechanism so that a period of stopping holding the substrate by the chuck includes a period of simultaneously executing a period of supplying gas to the first space and enabling communication between the first space and the external space.

[0006] According to a second aspect of the present disclosure, there is provided a substrate processing apparatus for processing a substrate, comprising a holding device configured to hold the substrate, the holding device comprising the above-mentioned holding device.

[0007] According to a third aspect of the present disclosure, there is provided a method for manufacturing an article, comprising forming a pattern on a substrate using the above-mentioned substrate processing apparatus, processing the substrate having the pattern formed in the pattern forming step, and manufacturing an article using the processed substrate.

[0008] Further aspects of the present disclosure will become apparent from the following description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a diagram for describing an exposure apparatus according to an aspect of the present disclosure.

[0010] Figure 2 is a schematic diagram showing the configuration of a substrate stage according to the first embodiment.

[0011] Figure 3 It is a diagram showing the substrate stage when viewed from the +Z direction.

[0012] Figures 4A to 4C It is a cross-sectional view of the substrate stage.

[0013] Figures 5A to 5C It is a cross-sectional view of the substrate stage.

[0014] Figure 6 is a schematic diagram showing the configuration of a substrate stage according to a second embodiment.

[0015] Figure 7 is a schematic diagram showing the configuration of a substrate stage according to a third embodiment.

[0016] Figure 8 1 is a timing chart showing the timing of turning on the solenoid valve in the operation of transferring the substrate from the substrate chuck to the pin member.

[0017] Figure 9 is a timing chart showing the timing of turning on the electromagnetic valve in the operation of transferring the substrate from the substrate chuck to the pin member.

[0018] Figure 10A and Figure 10B 1 and 2 are views showing a specific layout example of the opening holes and the supply holes. DETAILED DESCRIPTION

[0019] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claimed invention. While various features are described in the embodiments, the present invention is not limited to embodiments requiring all of these features, and multiple such features may be appropriately combined. Furthermore, in the accompanying drawings, the same reference numerals are assigned to identical or similar structures, and repeated descriptions are omitted.

[0020] In an embodiment, a substrate processing device for processing a substrate includes a photolithography device, a measuring device, an inspection device, and the like. The photolithography device is a device configured to form a pattern on a substrate, and includes, for example, an exposure device, an imprinting device, a planarization device, a drawing device, and the like. The exposure device includes a device that projects the pattern of an original plate (mask or reticle) onto a substrate and exposes the substrate. The imprinting device includes a device that shapes an imprint material on a substrate with a mold and forms a pattern of the imprint material on the substrate. The planarization device includes a device that planarizes a composition on a substrate with a mold having a flat surface. The drawing device includes a device that draws a pattern on a substrate using a charged particle beam (electron beam, ion beam, etc.). The measuring device is a device configured to measure a substrate, and includes, for example, an alignment measurement device for aligning the original plate and the substrate. The inspection device is a device configured to inspect a substrate, and includes, for example, an overlay inspection device that inspects the overlay accuracy of a pattern formed on the substrate.

[0021] <First embodiment>

[0022] Figure 1 This figure illustrates an exposure apparatus 200, which is a substrate processing apparatus according to one aspect of the present disclosure. Exposure apparatus 200 is used in photolithography processes, a manufacturing process for devices such as semiconductor devices and liquid crystal displays. Exposure apparatus 200 uses a master plate to expose a substrate, transferring the master plate's pattern onto the substrate, thereby forming a pattern on the substrate.

[0023] In this specification and the accompanying drawings, directions are expressed in an XYZ coordinate system, where the direction parallel to the plane on which the substrate is arranged is defined as the XY plane. Directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are defined as the X-direction, Y-direction, and Z-direction, respectively. Rotation about the X-axis, rotation about the Y-axis, and rotation about the Z-axis are defined as θX, θY, and θZ, respectively.

[0024] like Figure 1 As shown, the exposure apparatus 200 includes a substrate stage 1 , a controller 100 , an illumination optical system 202 , a reticle stage 204 , a projection optical system 205 , an off-axis mirror 209 , a substrate transport system 210 , and a reticle transport system 214 .

[0025] In the exposure apparatus 200, the illumination optical system 202 illuminates the original plate 203 with light (exposure light) from a light source. The projection optical system 205 has the function of imaging the light propagating from the object plane onto the image plane. The projection optical system 205 projects the light that has passed through (the pattern on) the original plate 203 onto the substrate 2, forming an image of the pattern of the original plate 203 on the substrate.

[0026] The plate stage 204 holds the plate 203 via a plate chuck (not shown) configured to clamp (hold) the plate 203. The plate stage 204 is a stage that moves linearly in the X, Y, and Z directions and is driven to rotate in the θX, θY, and θZ directions. The plate stage 204 can be driven independently in each direction. The exposure apparatus 200 includes a laser interferometer (not shown) for highly precise measurement of the position of the plate stage 204. The position of the plate stage 204 is determined based on the displacement of the plate stage 204 measured by the laser interferometer.

[0027] The master plate transfer system 214 includes a hand 215, a pre-alignment stage 216, a transfer robot 217, and a storage unit 218. The transfer robot 217 is an articulated robot. The transfer robot 217 includes a master plate holder that holds the master plate 203 and can be driven to any position in the XYZ space. The storage unit 218 includes a placement table for the master plate 203 and stores the master plate 203 transferred from outside the device. The master plate 203 stored in the storage unit 218 is transferred to the pre-alignment stage 216 by the transfer robot 217.

[0028] On the pre-alignment stage 216, the marks on the original plate 203 are inspected (observed) using a microscope to measure the positional relationship between the original plate 203 and the pre-alignment stage 216 (the misalignment of the original plate 203 relative to the pre-alignment stage 216). After measuring the positional relationship between the original plate 203 and the pre-alignment stage 216, the hand 215 holds the original plate 203 on the pre-alignment stage and drives the original plate 203 along the guide to a position (the original plate supply position) for transferring the original plate 203 to the original plate stage 204. At the original plate supply position, the hand 215 transfers the original plate 203 to the original plate stage 204. The original plate stage 204 holds the original plate 203 under vacuum suction using an original plate chuck. By adjusting the position at which the original plate 203 is received by the original plate stage 204, any misalignment of the original plate 203 relative to the pre-alignment stage 216 in the X, Y, and θZ directions can be corrected.

[0029] The substrate transfer system 210 includes a supply hand 211, a recovery hand 212, a storage unit 213, a pre-alignment unit 219, a transfer robot 220, and a temporary placement table 221. The storage unit 213 stores the substrate 2. The transfer robot 220 is composed of an articulated robot. The transfer robot 220 includes a substrate holder that holds the substrate 2, and can drive the substrate holder to any position in the XYZ space. The transfer robot 220 picks up the substrate 2 from the storage unit 213 and places the substrate 2 in the pre-alignment unit 219. In the pre-alignment unit 219, the periphery of the substrate 2 is irradiated with light, and the reflected light is detected by a sensor to measure the position of the outer shape of the substrate 2 relative to the pre-alignment unit 219.

[0030] The supply hand 211 is a mechanism configured to transfer the substrate 2 from the pre-alignment unit 219 to the substrate stage 1 (the pin member 6 provided on the coarse motion drive stage 5). The supply hand 211 can vacuum-suction and hold the substrate 2. The recovery hand 212 is a mechanism configured to transfer the substrate 2 from the substrate stage 1 to the temporary placement table 221. The recovery hand 212 can vacuum-suction and hold the substrate 2. The temporary placement table 221 is a placement table configured to temporarily place the substrate 2 retrieved from the substrate stage 1 by the recovery hand 212. The transfer robot 220 cannot directly receive the substrate 2 from the recovery hand 212 and therefore transfers the substrate 2 via the temporary placement table 221.

[0031] The substrate stage 1 includes a fine-motion drive stage 4 and a coarse-motion drive stage 5. The substrate stage 1 vacuum-draws and holds the substrate 2 via a substrate chuck 3 placed on the fine-motion drive stage 4. The fine-motion drive stage 4 is a stage that moves linearly in the X, Y, and Z directions and is driven to rotate in the θX, θY, and θZ directions. The fine-motion drive stage 4 can be driven independently in each direction. The exposure device 200 includes a laser interferometer (not shown) for high-precision measurement of the position of the fine-motion drive stage 4. The position of the fine-motion drive stage 4 is determined by the displacement of the fine-motion drive stage 4 measured by the laser interferometer.

[0032] Pin members 6 are used when receiving substrates 2 from the supply hand 211 and when transferring substrates 2 to the recovery hand 212. Pin members 6 can vacuum and hold substrates 2. In this embodiment, at least three pin members 6 are fixed to the coarse movement drive stage 5 and arranged upright relative to the holding surface of the substrate chuck 3 that holds the substrate 2. The pin members 6 are fixed to the coarse movement drive stage 5 and are driven together with the coarse movement drive stage 5. Note that while at least three pin members 6 are provided in this embodiment, the number of pin members 6 is not limited, as long as they can satisfactorily and stably hold the substrate 2 according to the size, material, and quality of the substrate 2.

[0033] Coarse drive stage 5 is a stage that moves linearly in the X and Y directions and is driven to rotate in the θZ direction. Based on the distance between coarse drive stage 5 and fine drive stage 4, which is measured by, for example, a capacitance sensor, coarse drive stage 5 is controlled by an actuator such as a linear motor to track the position of fine drive stage 4.

[0034] Temperature-controlled gas is supplied from a gas supply port (not shown) provided in the exposure device 200 to the external space (external space of the substrate chuck 3), which is the space surrounding the substrate stage 1, and the ambient temperature, humidity, etc. of the substrate stage 1 are maintained at predetermined values. Hereinafter, the external space of the substrate stage 1, in which the ambient temperature, humidity, etc. of the substrate stage 1 are maintained at predetermined values, will sometimes be referred to as a stage space.

[0035] The off-axis mirror 209 measures the position of the substrate 2 by detecting a mark (alignment mark) provided on the substrate 2 held by the substrate stage 1 .

[0036] The controller 100 is composed of an information processing device (computer) including a CPU, memory, and the like. The controller 100 collectively controls the various units of the exposure device 200 according to a program stored in the storage unit to operate the exposure device 200. The controller 100 controls, for example, the sequence of exposure processing for exposing the substrate 2 (exposure sequence), the sequence of supplying the substrate 2 to the substrate stage 1 (supply sequence), and the sequence of recovering the substrate 2 from the substrate stage 1 (recovery sequence).

[0037] This embodiment provides a novel technology for the recovery sequence of a substrate 2. The recovery sequence of a substrate 2 includes transferring the substrate 2 held by the substrate stage 1 from the substrate chuck 3 to the pin member 6 after exposing the substrate 2. During the recovery sequence, specifically during the unloading sequence when the substrate chuck 3 stops holding the substrate 2, it is preferable to supply gas to the space between the substrate 2 and the substrate chuck 3. However, if the amount of gas supplied to the space between the substrate 2 and the substrate chuck 3 is too much, the substrate 2 may float from the substrate chuck 3 and slide sideways. Conversely, if the amount of gas supplied to the space between the substrate 2 and the substrate chuck 3 is too little, the substrate 2 and the substrate chuck 3 remain fixed, forcing the substrate 2 to separate from the substrate chuck 3, causing wear to the substrate chuck 3. When the vacuum is stopped, it takes time to fill the vacuum space with gas, which prolongs the unloading time and reduces productivity. To address this issue, this embodiment provides a novel technology that can suppress the substrate 2 from sliding sideways while reducing wear on the substrate chuck 3 during the recovery sequence (unloading sequence).

[0038] First, a method of vacuum-sucking and holding the substrate 2 by the substrate chuck 3 and a method of supplying gas to the space between the substrate 2 and the substrate chuck 3 will be explained. Note that hereinafter, the space between the substrate 2 and the substrate chuck 3 will sometimes be referred to as a first space. Figure 2 As shown, the substrate stage 1 includes an ejection mechanism EM used when the substrate chuck 3 holds the substrate 2 , and a supply mechanism SM and an opening mechanism OM used when the substrate chuck 3 stops holding the substrate 2 . Figure 2 2 is a schematic diagram showing a configuration example of the substrate stage 1 .

[0039] The exhaust mechanism EM is configured to exhaust gas from the first space, which serves as the space between the substrate 2 and the substrate chuck 3. The exhaust mechanism EM includes a flow path (tube) 32 (third flow path), a solenoid valve 42 (third valve), and a regulator 51. The supply mechanism SM is configured to supply gas to the first space and includes a flow path (tube) 30 (first flow path), a solenoid valve 40 (first valve), and a regulator 50. The opening mechanism OM is configured to connect the first space and the stage space to each other and includes a flow path (tube) 31 (second flow path) and a solenoid valve 41 (second valve).

[0040] By exhausting gas from the first space between the substrate 2 and the substrate chuck 3 and reducing the pressure through the exhaust mechanism EM, the substrate stage 1 vacuum-suctions and holds the substrate 2 with the substrate chuck 3. Fluid channels 30, 31, and 32 are connected to the substrate chuck 3. The substrate chuck 3 is vacuum-suctioned and held on the fine-motion drive stage 4. The fine-motion drive stage 4 is placed on the coarse-motion drive stage 5. In this embodiment, solenoid valves 40, 41, and 42, as well as regulators 50 and 51, are incorporated into the coarse-motion drive stage 5.

[0041] The flow path 31 connects the stage space with the first space between the substrate 2 and the substrate chuck 3 via a solenoid valve 41 provided on the flow path 31. The flow path 30 connects the first space with a positive pressure tank 7, which serves as a positive pressure source (gas supply source) for generating positive pressure, via a solenoid valve 40 provided on the flow path 30. The positive pressure tank 7 is located outside the coarse adjustment drive stage 5 and is configured as, for example, a factory facility. The solenoid valve 40 is provided between the positive pressure tank 7 and the substrate chuck 3. The flow path 32 connects the first space between the substrate 2 and the substrate chuck 3 with a vacuum pump 8, which generates negative pressure, via a solenoid valve 42 provided on the flow path 32.

[0042] The regulator 51 is disposed between the vacuum pump 8 and the substrate chuck 3, specifically, between the vacuum pump 8 and the solenoid valve 42, and is capable of regulating the pressure in the first space to a desired vacuum pressure. To supply the pressure regulated by the regulator 51 to the substrate chuck 3, the solenoid valve 42 is positioned closer to the substrate chuck 3 than the regulator 51. Under the control of the controller 100, the solenoid valve 42 is turned on (i.e., opened) to regulate the pressure in the first space via the vacuum pump 8. Furthermore, under the control of the controller 100, the solenoid valve 42 is turned off (i.e., closed) to stop the vacuum pump 8 from regulating the pressure in the first space.

[0043] The regulator 50 is disposed between the positive pressure tank 7 and the substrate chuck 3, specifically, between the positive pressure tank 7 and the solenoid valve 40, and can adjust the pressure of the gas supplied from the positive pressure tank 7 to a desired pressure. Adjusting the pressure of the gas supplied from the positive pressure tank 7 also means adjusting the flow rate of the gas supplied from the positive pressure tank 7. In order to supply the pressure adjusted by the regulator 50 to the substrate chuck 3, the solenoid valve 40 is arranged closer to the substrate chuck 3 side than the regulator 50. Under the control of the controller 100, the solenoid valve 40 is turned on (i.e., the solenoid valve 40 is opened) to adjust the pressure of the first space by the positive pressure tank 7. In addition, under the control of the controller 100, the solenoid valve 40 is turned off (i.e., the solenoid valve 40 is closed) to stop the pressure adjustment of the first space by the positive pressure tank 7.

[0044] Solenoid valves 40, 41, and 42 can be replaced by servo valves with freely adjustable opening and closing degrees, proportional solenoid valves controlled in proportion to the current, and the like. Although no regulator is provided on flow path 31 in this embodiment, a regulator can be inserted between solenoid valve 41 and the stage space to adjust the flow rate of gas flowing through flow path 31.

[0045] When the substrate 2 is held by the substrate chuck 3 , the electromagnetic valve 42 is turned on to decompress the first space by the vacuum pump 8 and vacuum-suction the substrate 2 by the substrate chuck 3 .

[0046] When the substrate chuck 3 ceases to hold the substrate 2, the solenoid valve 42 is disconnected and the solenoid valves 40 and 41 are connected, thereby supplying gas from the stage space and the positive pressure tank 7 to the first space. In other words, when the substrate chuck 3 ceases to hold the substrate 2, the supply mechanism SM and the opening mechanism OM are connected, so that gas is supplied from the positive pressure tank 7 to the first space, and the first space and the stage space are connected to each other. According to this embodiment, the space between the substrate 2 and the substrate chuck 3 can be quickly pressurized, so that the vacuum applied to the substrate 2 can be stopped in a short time. Therefore, it is possible to avoid extending the unloading time and suppress the reduction in productivity.

[0047] Figure 3 is a view showing the substrate stage 1 as viewed from the +Z direction. In this embodiment, the annular seal portion 91 is provided on the substrate chuck 3 along its periphery. However, providing the seal portion 91 on the substrate chuck 3 is not always necessary. The number and layout of the seal portions 91 provided on the substrate chuck 3 are not limited.

[0048] The substrate chuck 3 is provided with a plurality of protrusions (not shown) called chuck pins, which serve as a holding surface for holding the substrate 2. A supply hole 20 (first hole) is provided at a first position on the substrate chuck 3, connected to the flow path 30. An open hole 21 (second hole) is provided at a second position different from the first position, connected to the flow path 31. Furthermore, a discharge hole 22 (third hole) is provided at a third position different from the first and second positions, connected to the flow path 32.

[0049] In this embodiment, the eight supply holes 20 and the eight open holes 21 are alternately arranged on a circle (concentrically) at equal distances from the center of the substrate chuck 3, and are arranged at equal intervals on the same circle. However, the present disclosure is not limited to this. Furthermore, the three discharge holes 22 are arranged on a circle (concentrically) at equal distances from the center of the substrate chuck 3. However, the present disclosure is not limited to this.

[0050] like Figure 3 As shown, the substrate chuck 3 and the fine-motion driving stage 4 are provided with through holes 10 so that the pin member 6 can pass through the through holes 10. The fine-motion driving stage 4 can be driven in the Z direction without interfering with the pin member 6.

[0051] The substrate chuck 3 vacuums and holds the substrate 2 by exhausting the gas in the first space between the substrate 2 and the substrate chuck 3 through the exhaust holes 22. This allows the gap between the substrate 2 and the small chuck pins to be evacuated via the exhaust holes 22, allowing the substrate chuck 3 to vacuum and hold the substrate 2 with uniform force. In this embodiment, the presence of a seal 91 between the substrate 2 and the substrate chuck 3 prevents the inflow of gas (air) from the stage space, enabling vacuum suction of the substrate 2.

[0052] The operation of stopping the substrate chuck 3 from holding the substrate 2 is performed by supplying gas from the positive pressure tank 7 to the first space via the supply hole 20 and by communicating the first space and the stage space with each other via the opening hole 21 by the opening mechanism OM. Note that, as described above, if the amount of gas supplied from the positive pressure tank 7 to the first space is too much, the substrate 2 may slip sideways. If the amount of gas supplied from the positive pressure tank 7 to the first space is too little, the substrate chuck 3 may wear.

[0053] Next, we will refer to Figure 4A 、 Figure 4B and Figure 4C A method of transferring the substrate 2 from the substrate chuck 3 to the pin member 6 is explained. Figures 4A to 4C It is a cross-sectional view of the substrate stage 1 .

[0054] Fine-drive stage 4 is driven in the Z direction along pin members 6. Note that depending on the positions of the three pin members 6 in the Z direction, fine-drive stage 4 can be driven in the Z direction while tilting. As described above, pin members 6 are fixed to coarse-drive stage 5, which is drivable in the X and Y directions. The positions of pin members 6 are measured by a measuring device such as an interferometer, a capacitive sensor, or an encoder.

[0055] The pin member 6 is connected to the vacuum pump 9 via the flow path 35. A regulator 73 and a solenoid valve 43 are provided between the vacuum pump 9 and the pin member 6. To supply the pressure regulated by the regulator 73 to the pin member 6, the solenoid valve 43 is positioned closer to the pin member 6 than the regulator 51. Under the control of the controller 100, the solenoid valve 43 is energized (i.e., the solenoid valve 43 is open) to regulate the pressure in the space between the substrate 2 and the substrate chuck 3 via the pin member 6 by the vacuum pump 9. Furthermore, under the control of the controller 100, the solenoid valve 43 is de-energized (i.e., the solenoid valve 43 is closed) to stop the pressure regulation of the space between the substrate 2 and the substrate chuck 3 by the vacuum pump 9 via the pin member 6. In this embodiment, the solenoid valve 43 and regulator 73 are provided outside the coarse drive stage 5, that is, within the stage space. However, they may also be incorporated into the coarse drive stage 5. The vacuum pump 9 may be configured as a factory installation, for example.

[0056] See also Figure 4A , the micro-drive stage 4 is located in the +Z direction, and the substrate chuck 3 vacuum-suctions the substrate 2. Figure 4B , as shown by the arrow, the fine-motion drive stage 4 is driven in the -Z direction so that the pin member 6 and the substrate 2 come into contact with each other. At this time, the fine-motion drive stage 4 can stop driving. After the pin member 6 and the substrate 2 come into contact with each other, the substrate chuck 3 stops holding the substrate 2. In addition, the solenoid valve 43 is turned on to vacuum-suction and hold the substrate 2 through the pin member 6. In the state where the pin member 6 holds the substrate 2, the fine-motion drive stage 4 is further driven in the -Z direction to transfer the substrate 2 from the substrate chuck 3 to the pin member 6, as shown in FIG. Figure 4C shown.

[0057] Here, we have explained the method of driving the fine-motion drive stage 4 to transfer the substrate 2 from the substrate chuck 3 to the pin member 6. However, the present disclosure is not limited to this method, and it is sufficient to simply change the relative position of the substrate chuck 3 and the pin member 6 in the Z direction. For example, the entire pin member 6 or its distal end may be driven in the Z direction to transfer the substrate 2 from the substrate chuck 3 to the pin member 6. Changing the relative position of the substrate chuck 3 and the pin member 6 is equivalent to driving the substrate chuck 3 and the pin member 6 relative to each other.

[0058] Will refer to Figure 5A 、 Figure 5B and Figure 5CA method of transferring the substrate 2 from the substrate chuck 3 to the pin member 6 by driving the entire pin member 6 in the Z direction is explained. Figures 5A to 5C is a cross-sectional view of the substrate stage 1. The drive unit that drives the pin member 6 may be incorporated into the pin member 6 or provided outside the pin member 6 and connected to the pin member 6. Note that, as described above, the distal end of the pin member 6 may be driven (extended) in the Z direction to transfer the substrate 2 from the substrate chuck 3 to the pin member 6, rather than driving the entire pin member 6.

[0059] refer to Figure 5A , the pin member 6 is positioned in the -Z direction and does not contact the substrate 2. In this state, the substrate chuck 3 holds the substrate 2. Figure 5B , as shown by the arrow, the pin member 6 is driven in the +Z direction and contacts the substrate 2. After the pin member 6 and the substrate 2 contact each other, the drive of the pin member 6 is stopped, and the holding of the substrate 2 by the substrate chuck 3 is stopped. Then, the solenoid valve 43 is turned on to vacuum the substrate 2 through the pin member 6. In the state where the pin member 6 holds the substrate 2, the pin member 6 is further driven in the +Z direction to transfer the substrate 2 from the substrate chuck 3 to the pin member 6, as shown in FIG. Figure 5C shown.

[0060] The reason why the space between the substrate 2 and the substrate chuck 3 is quickly pressurized to stop the vacuum applied to the substrate 2 in a short time while suppressing the side slip of the substrate 2 and the wear of the substrate chuck 3 in this embodiment will be explained in detail.

[0061] According to this embodiment, in the substrate stage 1 serving as a substrate holding device, a flow path 31 is incorporated into the coarse motion drive stage 5 and communicates with the stage space, which is the space continuous with the back side of the substrate 2 (the surface opposite to that held by the substrate chuck 3). When gas is supplied through the supply hole 20, the solenoid valve 41 is energized, connecting the stage space and the first space serving as the space between the substrate 2 and the substrate chuck 3 via the open hole 21 and the flow path 31. When the substrate chuck 3 ceases holding the substrate 2, gas is supplied (flowed) not only from the positive pressure tank 7 but also from the stage space into the first space, allowing the vacuum applied to the substrate 2 to be quickly terminated. According to this embodiment, an increase in unloading time can be avoided, and a decrease in productivity can be suppressed.

[0062] In this embodiment, if the pressure in the first space, serving as the space between the substrate 2 and the substrate chuck 3, becomes higher than the pressure in the stage space, a gas flow is established from the first space toward the stage space via the open hole 21 (and the flow path 31). Excess gas supplied to the first space is discharged into the stage space, thereby suppressing sideways slippage of the substrate 2 and wear of the substrate chuck 3.

[0063] In this embodiment, the solenoid valve 41 provided on the flow path 31 communicating with the stage space is incorporated into the coarse motion drive stage 5. This shortens the length of the flow path 31 and improves the responsiveness of the gas flow supplied from the stage space to the first space serving as the space between the substrate 2 and the substrate chuck 3, thereby helping to shorten the time required to stop the substrate chuck 3 from holding the substrate 2.

[0064] By establishing a gas flow from the first space, serving as the space between the substrate 2 and the substrate chuck 3, toward the stage space via the opening hole 21, the first space and the stage space can communicate with each other via the gap between the substrate 2 and the substrate chuck 3. Excess gas supplied to the first space can be more efficiently discharged to the stage space, thereby more reliably suppressing wear of the substrate chuck 3. Note that since there is a gas flow from the first space to the stage space via the opening hole 21, not all of the gas supplied from the positive pressure tank 7 via the supply hole 20 to the first space escapes (flows) through the gap between the substrate 2 and the substrate chuck 3. Consequently, sideways slippage of the substrate 2 is still suppressed.

[0065] In this embodiment, a single positive pressure tank 7 is provided, but multiple positive pressure tanks may be provided for the flow path 30. In this case, the amount of gas supplied to the first space between the substrate 2 and the substrate chuck 3 can be increased, and a sufficient amount of gas can be supplied even for substrates that have significantly warped and have expanded the first space. Similarly, in this embodiment, a single vacuum pump 8 is provided, but multiple vacuum pumps may be provided for the flow path 32. In this case, the amount of gas exhausted from the first space can be increased, and a sufficient amount of gas can be exhausted even for substrates that have significantly warped and have expanded the first space.

[0066] In this embodiment, there are no particular restrictions on the timing of opening the solenoid valve 40 and the timing of opening the solenoid valve 41. For example, if it is necessary to supply gas to the first space between the substrate 2 and the substrate chuck 3 in a shorter time, the solenoid valve 40 can be opened first and then the solenoid valve 41. If it is necessary to more reliably suppress side slippage of the substrate 2, the solenoid valve 41 can be opened first and then the solenoid valve 40. In this way, the timing of opening the solenoid valves 40 and 41, namely, the timing of supplying gas through the supply hole 20 and the timing of establishing communication between the first space and the stage space through the open hole 21, can be controlled (set) according to the purpose.

[0067] <Second embodiment>

[0068] Will refer to Figure 6 A substrate stage 1 according to a second embodiment will be described. Figure 6 1 is a schematic diagram showing an example of the construction of the substrate stage 1. In this embodiment, Figure 6As shown, the substrate stage 1 has a configuration in which a flow path 30 for supplying gas from the positive pressure tank 7 to a first space serving as a space between the substrate 2 and the substrate chuck 3 and a flow path 32 for exhausting gas from the first space are common.

[0069] exist Figure 6 In the embodiment, flow path 33 serves as a flow path for supplying gas from the positive pressure tank 7 to the first space and for exhausting gas from the first space. Flow paths 30 and 32 merge between the substrate chuck 3 and the solenoid valves 40 and 42. Gas is supplied to and exhausted from the first space via the supply / exhaust hole 23 in accordance with the on / off switching of the solenoid valves 40 and 42.

[0070] When the substrate 2 is held by the substrate chuck 3, the solenoid valve 42 is turned on, and the solenoid valves 40 and 41 are turned off, so that the first space is depressurized by the vacuum pump 8 and the substrate 2 is vacuum-sucked by the substrate chuck 3. In this embodiment, in consideration of the first embodiment, the exhaust mechanism EM exhausts gas from the first space via the supply hole 20 (the supply / exhaust hole 23 also functions) provided in the substrate chuck.

[0071] When the substrate chuck 3 ceases to hold the substrate 2, the solenoid valve 42 is opened, and the solenoid valves 40 and 41 are opened, thereby supplying gas from the stage space and the positive pressure tank 7 to the first space. In other words, when the substrate chuck 3 ceases to hold the substrate 2, the supply mechanism SM and the opening mechanism OM are controlled to supply gas from the positive pressure tank 7 to the first space, thereby establishing communication between the first space and the stage space. According to this embodiment, the space between the substrate 2 and the substrate chuck 3 can be quickly pressurized, and the vacuum applied to the substrate 2 can be stopped in a short time. Therefore, an increase in unloading time can be avoided, and a decrease in productivity can be suppressed.

[0072] In this embodiment, if the pressure in the first space, serving as the space between the substrate 2 and the substrate chuck 3, becomes higher than the pressure in the stage space, a gas flow is established from the first space toward the stage space via the open hole 21 (and the flow path 31). Excess gas supplied to the first space is discharged into the stage space, thereby suppressing sideways slippage of the substrate 2 and wear of the substrate chuck 3. In this case, the first space and the stage space are connected via the gap between the substrate 2 and the substrate chuck 3. Excess gas supplied to the first space can be discharged more efficiently into the stage space, thereby more reliably suppressing wear of the substrate chuck 3.

[0073] In this embodiment, the device configuration is simplified by integrating the flow path 30 for supplying gas from the positive pressure tank 7 to the first space between the substrate 2 and the substrate chuck 3, and the flow path 32 for exhausting gas from the first space. Even with the integration of flow paths 30 and 32, when the substrate chuck 3 stops holding the substrate 2, gas can be supplied from the positive pressure tank 7 to the first space, and the first space can be opened to the stage space (air release) via the opening hole 21. This allows gas to be supplied (flowed) from the stage space to the first space, shortening the time required to stop the substrate chuck 3 from holding the substrate 2.

[0074] Note that the number of positive-pressure tanks 7 , the number of vacuum pumps 8 , the timing of turning on the electromagnetic valves 40 and 41 , and the like are similar to those in the first embodiment.

[0075] <Third embodiment>

[0076] Will refer to Figure 7 A substrate stage 1 according to a third embodiment will be described. Figure 7 1 is a schematic diagram showing an example of the construction of the substrate stage 1. In this embodiment, Figure 7 As shown, the substrate stage 1 has a structure in which a flow path 31 for connecting the stage space and a first space serving as a space between the substrate 2 and the substrate chuck 3 to each other (the first space is open to the atmosphere) and a flow path 32 for exhausting gas from the first space are common.

[0077] exist Figure 7 In the embodiment, flow path 34 serves as a flow path for connecting the stage space and the first space between the substrate 2 and the substrate chuck 3, and for exhausting gas from the first space. Flow paths 31 and 32 merge between the substrate chuck 3 and the solenoid valves 41 and 42. Communication between the first space and the stage space, and exhaust of gas from the first space, are achieved through the opening / exhaust hole 24 in response to the on / off switching of the solenoid valves 41 and 42.

[0078] When the substrate 2 is held by the substrate chuck 3, the solenoid valve 42 is turned on, and the solenoid valves 40 and 41 are turned off, so that the first space is depressurized by the vacuum pump 8 and the substrate 2 is vacuum-sucked by the substrate chuck 3. In this embodiment, the exhaust mechanism EM exhausts gas from the first space via the opening hole 21 (the opening / exhaust hole 24 also functions) provided in the substrate chuck in the case of the first embodiment.

[0079] When the substrate chuck 3 ceases to hold the substrate 2, the solenoid valve 42 is opened, and the solenoid valves 40 and 41 are opened, thereby supplying gas from the stage space and the positive pressure tank 7 to the first space. In other words, when the substrate chuck 3 ceases to hold the substrate 2, the supply mechanism SM and the opening mechanism OM are controlled to supply gas from the positive pressure tank 7 to the first space, thereby connecting the first space and the stage space. According to this embodiment, the space between the substrate 2 and the substrate chuck 3 can be quickly pressurized, and the vacuum applied to the substrate 2 can be stopped in a short time. Therefore, it is possible to avoid extending the unloading time and suppress a decrease in productivity.

[0080] In this embodiment, if the pressure in the first space, serving as the space between the substrate 2 and the substrate chuck 3, becomes higher than the pressure in the stage space, a gas flow is established from the first space toward the stage space via the opening / exhaust holes 24 (and the flow path 34). Excess gas supplied to the first space is discharged into the stage space, thereby suppressing sideways slippage of the substrate 2 and wear of the substrate chuck 3. In this case, the first space and the stage space are connected via the gap between the substrate 2 and the substrate chuck 3. Excess gas supplied to the first space is more efficiently discharged into the stage space, thereby more reliably suppressing wear of the substrate chuck 3.

[0081] In this embodiment, the device configuration is simplified by commonizing the flow path 31 for connecting the stage space and the first space serving as the space between the substrate 2 and the substrate chuck 3, as well as the flow path 32 for exhausting gas from the first space. Even with the common flow paths 31 and 32, when the substrate chuck 3 stops holding the substrate 2, gas can be supplied from the positive pressure tank 7 to the first space, and the first space can be opened (air released) to the stage space via the opening / exhaust hole 24. This allows gas to be supplied (flowed) from the stage space to the first space, shortening the time required to stop the substrate chuck 3 from holding the substrate 2.

[0082] Note that the number of positive-pressure tanks 7 , the number of vacuum pumps 8 , the timing of turning on the electromagnetic valves 40 and 41 , and the like are similar to those in the first embodiment.

[0083] <Fourth embodiment>

[0084] In the fourth embodiment, the Figure 2 The timing of turning on the respective electromagnetic valves 40, 41, 42 and 43 will be explained by taking the substrate stage 1 as an example. Figure 8 : is a timing chart showing the timing of turning on the respective electromagnetic valves 40, 41, 42 and 43 in the operation of transferring the substrate 2 from the substrate chuck 3 to the pin member 6. Figure 8 In the figure, the horizontal axis represents time.

[0085] Reference Figure 8, T0 represents the time when the operation of transferring the substrate 2 from the substrate chuck 3 to the pin member 6 starts. At time T0, the fine-motion drive stage 4 is located on the +Z direction side, and the substrate chuck 3 vacuum-suctions and holds the substrate 2, as shown in FIG. Figure 4A T1 represents the moment when the substrate 2 and the pin member 6 contact each other, as shown in FIG. Figure 4B T2 represents the time when the operation of transferring the substrate 2 from the substrate chuck 3 to the pin member 6 is completed, as shown in FIG. Figure 4C For ease of understanding, Figure 8 Also shown are the components connected to each solenoid valve via the flow path. Note that Figure 8 Only the time during which the solenoid valve is on from T0 to T2 is shown, and the time during which the solenoid valve is off is not shown.

[0086] like Figure 8 As shown, at time T0, the solenoid valve 42 is turned on, and the substrate 2 is vacuum-drawn and held by the substrate chuck 3. The fine-drive stage 4 is driven in the -Z direction, and at time T1, the substrate 2 and the pin member 6 come into contact with each other. At time T1, the solenoid valve 42 is turned off, and the solenoid valve 43 is turned on, and the substrate 2 is vacuum-drawn and held by the pin member 6. While the substrate 2 is held by the pin member 6, the solenoid valve 40 is turned on, and gas is supplied from the positive pressure tank 7 through the supply hole 20 to the first space between the substrate 2 and the substrate chuck 3. As a result, the first space changes from a reduced pressure state (decompressed state) to an atmospheric pressure state.

[0087] After the solenoid valve 40 is turned on, the solenoid valve 41 is turned on to connect the first space and the stage space to each other via the open hole 21, and gas is supplied from the stage space to the first space (opening the first space to the atmosphere). This can shorten the time it takes for the first space to change from a reduced pressure state to an atmospheric pressure state, thereby suppressing a decrease in productivity. Note that when the pressure in the first space reaches atmospheric pressure and becomes higher than the pressure in the stage space, gas flows from the first space to the stage space via the open hole 21. This can suppress sideways slippage of the substrate 2. In addition, at the end of the substrate 2, without the intervention of the open hole 21, a portion is formed in which the first space and the stage space are connected to each other from the gap between the substrate 2 and the substrate chuck 3. This can suppress wear of the substrate chuck 3 that occurs when the substrate 2 is separated from the substrate chuck 3.

[0088] Thus, when the substrate 2 has an upwardly convex shape, it is effective to control the supply mechanism SM and the opening mechanism OM so that the solenoid valve 40 is turned on (opened) earlier than the solenoid valve 41. When gas is supplied to the first space between the substrate 2 and the substrate chuck 3 via the supply hole 20, a large amount of gas is required before the first space is brought from a reduced pressure state to atmospheric pressure. The supply mechanism SM is controlled to increase the amount of gas supplied from the positive pressure tank 7 to the first space via the supply hole 20. However, if a large amount of gas is supplied to the first space all at once, the substrate 2 may slip. In this embodiment, gas is gradually supplied to the first space by first turning on the solenoid valve 40 and then the solenoid valve 41, thereby suppressing slippage of the substrate 2. By supplying gas to the first space, the pressure in the first space reaches atmospheric pressure. If the pressure in the first space becomes higher than that in the stage space, gas still flows from the first space into the stage space via the opening hole 21 or through the gap between the substrate 2 and the substrate chuck 3. Therefore, it is possible to suppress wear of the substrate chuck 3 that occurs when the substrate 2 is separated from the substrate chuck 3 .

[0089] Note that in this embodiment, the timing for turning on solenoid valve 43 coincides with the timing for turning on solenoid valve 40, but the present disclosure is not limited thereto. After gas is supplied to the first space via supply hole 20, it takes a predetermined amount of time for the pressure in the first space to reach atmospheric pressure. Taking this time into account, the timing for turning on solenoid valve 40 can be set earlier than the timing for turning on solenoid valve 43. This can further suppress a decrease in productivity. This also applies to the timing for turning on solenoid valve 41.

[0090] <Fifth embodiment>

[0091] In the fifth embodiment, the Figure 2 The timing of turning on the respective electromagnetic valves 40, 41, 42 and 43 will be explained by taking the substrate stage 1 as an example. Figure 9 : is a timing chart showing the timing of turning on the respective electromagnetic valves 40, 41, 42 and 43 in the operation of transferring the substrate 2 from the substrate chuck 3 to the pin member 6. Figure 9 In the example, the horizontal axis represents time. Note that the fifth embodiment is different from the fourth embodiment ( Figure 8 ) is different only in the timing of the conduction solenoid valve 40 and the timing of the conduction solenoid valve 41, as shown in FIG. Figure 9 More specifically, in the fifth embodiment, the supply mechanism SM and the opening mechanism OM are controlled so that the timing of turning on (opening) the electromagnetic valve 40 is later than the timing of turning on (opening) the electromagnetic valve 41 .

[0092] Controlling the timing for turning on each of the solenoid valves 40 and 41 in this embodiment is effective when the substrate 2 has a downwardly convex shape. In this case, when the first space and the stage space are connected at the end of the substrate 2 through the gap between the substrate 2 and the substrate chuck 3, a large amount of gas flows from the gap into the stage space, causing the substrate 2 to slip sideways. In this embodiment, the solenoid valve 41 is turned on first, followed by the solenoid valve 40, to reduce the amount of gas flowing from the gap between the substrate 2 and the substrate chuck 3 into the stage space, thereby suppressing slippage of the substrate 2.

[0093] In the fourth and fifth embodiments, the timing for turning on the solenoid valve 40 and the timing for turning on the solenoid valve 41 are made different depending on the shape of the substrate 2 (upwardly convex or downwardly convex). Note that if the substrate 2 is flat, the supply mechanism SM and the opening mechanism OM can be controlled so that the timing for turning on the solenoid valve 40 and the timing for turning on the solenoid valve 41 are aligned. This effectively shortens the time required for the first space to transition from a decompressed state to an atmospheric pressure state, while suppressing sideways slippage of the substrate 2. Note that the timing for turning on the respective solenoid valves 40 and 41 can be controlled (set) based on the results of pre-measurement of the substrate 2 shape. This timing information is stored in a storage unit such as a memory in the controller 100.

[0094] <Sixth embodiment>

[0095] In the sixth embodiment, the positional relationship between the supply hole 20 and the open hole 21 will be explained. The open hole 21 is provided near the supply hole 20. When gas is supplied to the first space serving as the space between the substrate 2 and the substrate chuck 3 via the supply hole 20, the gas may be rapidly supplied to the first space at the timing when the solenoid valve 40 is turned on. In this case, the first space and the stage space may be unintentionally connected to each other from the gap between the substrate 2 and the substrate chuck 3 at the end of the substrate 2, a large amount of gas may flow from the first space into the stage space, and the substrate 2 may slide sideways. However, by providing the open hole 21 near the supply hole 20, the conductivity of the gas present in the first space when it flows from the supply hole 20 to the open hole 21 can be lower than the conductivity when the gas flows from the supply hole 20 to the gap at the end of the substrate 2. This can reduce the unintentional flow of the gas present in the first space from the gap at the end of the substrate 2 to the stage space and suppress the sideways sliding of the substrate 2.

[0096] In this embodiment, providing the open hole 21 near the supply hole 20 means that the supply hole 20 and the open hole 21 are arranged in the substrate chuck 3 so that the distance between the supply hole 20 and the open hole 21 is 5 to 75 times the diameter of the open hole 21, inclusive. If the distance between the supply hole 20 and the open hole 21 is short, the gas supplied to the first space flows into the nearest open hole 21, making it difficult to increase the pressure in the first space. This can easily cause wear to the substrate chuck 3 when the substrate 2 is separated from the substrate chuck 3. In contrast, if the distance between the supply hole 20 and the open hole 21 is long, the gas supplied to the first space takes time to flow into the open hole 21, and the pressure in the first space is likely to increase. As a result, the gas supplied to the first space may escape from the gap at the end of the substrate 2 before reaching the open hole 21, making it more likely that the substrate 2 will slip. Therefore, it is preferable that the supply hole 20 and the open hole 21 be arranged in the substrate chuck 3 so that the distance between the supply hole 20 and the open hole 21 is 5 to 75 times the diameter of the open hole 21, inclusive.

[0097] A specific layout example of the opening hole 21 and the supply hole 20 will be explained to arrange the opening hole 21 near the supply hole 20 , that is, to set the distance between the supply hole 20 and the opening hole 21 to 5 times (inclusive) to 75 times (inclusive) the diameter of the opening hole 21 .

[0098] For example, Figure 3 As shown, the supply holes 20 are provided at a plurality of first positions on a circle CF1 (on a first circle) at a first distance from the center CP of the substrate chuck 3, and the open holes 21 are provided at a plurality of second positions on the circle CF1 that are different from the first positions. The supply holes 20 and the open holes 21 are alternately provided on the circle CF1. In this case, the supply holes 20 and the open holes 21 are preferably provided at equal intervals.

[0099] Alternatively, as Figure 10A As shown, the supply holes 20 and the open holes 21 can be arranged on different circles. More specifically, the supply holes 20 are arranged at a plurality of first positions on a circle CF3 (on a first circle) that is a first distance away from the center CP of the substrate chuck 3. Conversely, the open holes 21 are arranged at a plurality of second positions on a circle CF4 (on a second circle) that is a second distance different from the first distance from the center CP of the substrate chuck 3. In this case, the supply holes 20 are preferably arranged at equal intervals on the circle CF3, and the open holes 21 are preferably arranged at equal intervals on the circle CF4. Furthermore, it is preferred that the first distance be set smaller than the second distance, and that the open holes 21 be arranged outside the supply holes 20 when viewed from the center CP of the substrate chuck 3.

[0100] Alternatively, the supply hole 20 and the opening hole 21 may be arranged concentrically, as in Figure 10BAs shown. More specifically, the supply holes 20 are provided at multiple first positions on a circle CF5 (on the first circle) that is a first distance from the center CP of the substrate chuck 3, and at multiple first positions on a circle CF6 (on the second circle) that is a second distance different from the first distance from the center CP. In contrast, the open holes 21 are provided at multiple second positions on the circle CF5 (on the first circle) that is a first distance from the center CP of the substrate chuck 3, and at multiple second positions on the circle CF6 (on the second circle) that is a second distance from the center CP, different from the first positions. The supply holes 20 and the open holes 21 are alternately provided on each of the circles CF5 and CF6. In this case, the supply holes 20 and the open holes 21 are preferably provided at equal intervals. Furthermore, the supply holes 20 are preferably aligned and provided on a first straight line SL1 passing through the center CP of the substrate chuck 3 (i.e., on the first straight line), while the open holes 21 are preferably aligned and provided on a second straight line SL2 passing through the center CP that is different from the first straight line SL1 (i.e., on the second straight line).

[0101] <Seventh embodiment>

[0102] The article manufacturing method according to an embodiment of the present disclosure is suitable for manufacturing articles, such as devices (semiconductor devices, magnetic storage media, liquid crystal elements, etc.). This manufacturing method includes forming a pattern on a substrate using an exposure device 200, processing the substrate having the pattern formed thereon, and manufacturing the article using the processed substrate. This manufacturing method may also include other known steps (oxidation, deposition, vapor deposition, doping, planarization, etching, resist removal, dicing, bonding, packaging, etc.). Compared to conventional methods, the article manufacturing method according to this embodiment is advantageous in at least one of the following aspects: article performance, quality, productivity, and production cost.

[0103] While the present disclosure has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all modifications and equivalent structures and functions.

Claims

1. A holding device for holding a substrate, comprising: a chuck configured to hold a substrate; a supply mechanism configured to supply a gas to a first space between the substrate and the chuck via a first hole provided at a first position of the chuck; an opening mechanism configured to allow the first space and the external space to communicate with each other via a second hole provided at a second position of the chuck different from the first position; and The controller is configured to control the supply mechanism and the opening mechanism so that a period in which holding of the substrate by the chuck is stopped includes a period in which supply of gas to the first space and communication between the first space and the external space are simultaneously performed.

2. The holding device according to claim 1, wherein: The first hole and the second hole are provided in the chuck so that a distance between the first position and the second position is not less than 5 times and not more than 75 times a diameter of the second hole.

3. The holding device according to claim 1, wherein: The first holes are arranged at a plurality of first positions on a first circle at a first distance from the center of the chuck, The second holes are provided at a plurality of second positions on the first circle that are different from the plurality of first positions, and The first holes and the second holes are alternately arranged on the first circle.

4. The holding device according to claim 3, wherein: The first holes and the second holes are arranged at equal intervals on the first circle.

5. The holding device according to claim 3, wherein: The first holes are provided at a plurality of first positions on a second circle having a second distance from the center of the chuck that is different from the first distance, The second holes are provided at a plurality of second positions on the second circle that are different from the plurality of first positions, and The first holes and the second holes are alternately arranged on the second circle.

6. The holding device according to claim 5, wherein: The first holes and the second holes are arranged at equal intervals on the second circle.

7. The holding device according to claim 5, wherein: The first hole is disposed on a first straight line passing through the center of the chuck, and The second hole is disposed on a second straight line passing through the center of the chuck, the second straight line being different from the first straight line.

8. The holding device according to claim 1, wherein: The first holes are disposed at a plurality of first positions on a first circle at a first distance from the center of the chuck, and The second holes are provided at a plurality of second positions on a second circle having a second distance from the center of the chuck that is different from the first distance.

9. The holding device according to claim 8, wherein: The first holes are arranged at equal intervals on the first circle, and The second holes are arranged at equal intervals on the second circle.

10. The holding device according to claim 8, wherein: The first distance is smaller than the second distance. 11 . The holding device according to claim 1 , further comprising an exhaust mechanism configured to exhaust gas from the first space through a third hole provided at a third position of the chuck different from the first position and the second position when the substrate is held by the chuck. 12 . The holding device according to claim 1 , further comprising an exhaust mechanism configured to exhaust gas from the first space through a first hole provided in the chuck when the substrate is held by the chuck. 13 . The holding device according to claim 1 , further comprising an exhaust mechanism configured to exhaust gas from the first space through a second hole provided in the chuck when the substrate is held by the chuck.

14. The holding device according to claim 1, wherein: The supply mechanism includes a first flow path configured to connect the first space and a gas supply source and a first valve provided on the first flow path. The opening mechanism includes a second flow path configured to connect the first space and the external space and a second valve provided on the second flow path, and The controller controls the supply mechanism to open the first valve and supply the gas from the supply source to the first space via the first flow path, and The controller controls the opening mechanism to open the second valve and communicate the first space and the external space with each other.

15. The holding device according to claim 14, wherein: The controller controls the supply mechanism and the opening mechanism so that a timing of opening the first valve and a timing of opening the second valve coincide with each other.

16. The holding device according to claim 14, wherein: The controller controls the supply mechanism and the opening mechanism to set the timing of opening the first valve earlier than the timing of opening the second valve.

17. The holding device according to claim 14, wherein: The controller controls the supply mechanism and the opening mechanism to set the timing of opening the first valve to be later than the timing of opening the second valve.

18. A substrate processing apparatus for processing a substrate, comprising: A holding device configured to hold a substrate, the holding device comprising the holding device according to claim 1.

19. The substrate processing apparatus according to claim 18, further comprising: an illumination optical system configured to illuminate the master; and The projection optical system is configured to project the pattern of the original plate onto the substrate.

20. A method of manufacturing an article, comprising: forming a pattern on a substrate using the substrate processing apparatus according to claim 18; processing the substrate on which the pattern is formed in the pattern forming step; and Manufacture articles from the treated substrate.

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