Semiconductor wafer processing method

Abstract

The processing method of the semiconductor wafer comprises the following steps: placing a conductor wafer in a reaction chamber, and introducing H2 and SiH4 gases into the reaction chamber to form a deposition layer on the surface of the semiconductor wafer; and boron doping gas is introduced into the reaction chamber, so that the surface of the semiconductor wafer is doped with boron atoms. The method is simple in process, high in production efficiency, low in treatment cost and suitable for industrial popularization and application.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a method for processing a semiconductor wafer. Background Art

[0002] Semiconductor technology is widely used in electronics, optoelectronics, and other fields, where the electrical conductivity of semiconductor materials is a crucial property. To control current flow or separate charges, it is sometimes necessary to create regions with lower electrical conductivity. Currently, methods commonly used to reduce electrical conductivity in semiconductor manufacturing typically require complex process steps and equipment, increasing manufacturing costs.

[0003] Therefore, there is an urgent need to provide an improved method for processing semiconductor wafers to overcome the above drawbacks. Summary of the Invention

[0004] The object of the present invention is to provide an improved method for processing semiconductor wafers, which has simple process, high production efficiency, low processing cost and is suitable for industrial promotion and use.

[0005] To achieve the above object, the semiconductor wafer processing method of the present invention comprises the following steps:

[0006] Placing a semiconductor wafer in a reaction chamber, introducing H2 and SiH4 gases into the reaction chamber to form a deposition layer on the surface of the semiconductor wafer; and

[0007] Boron doping gas is introduced into the reaction chamber to dope boron atoms on the surface of the semiconductor wafer.

[0008] Compared to existing technologies, the present invention first forms a deposition layer on the surface of a semiconductor wafer using H2 and SiH4 gases in a reaction chamber. Subsequently, a boron-doping gas is introduced into the reaction chamber to dope the semiconductor wafer with boron atoms. By adjusting the concentration of the boron-doping gas, localized doping and varying the direction, density, and shape of the polysilicon texture are achieved. In this way, the present invention achieves localized doping of the semiconductor wafer, thereby forming regions of reduced conductivity to meet industrial needs. Compared to traditional methods for reducing conductivity, the present invention offers advantages such as a simple process, high production efficiency, and low cost.

[0009] As an example, the doping concentration of the boron atoms is 5×10 18 to 6×10 19 cm -3 .

[0010] As an embodiment, in the step of forming the deposition layer, the temperature of the reaction chamber is 850-1000°C.

[0011] More preferably, the temperature of the reaction chamber is 950°C.

[0012] As an embodiment, the deposition layer is a silicon-containing deposition layer.

[0013] As an embodiment, the method further includes: dynamically adjusting the concentration of the boron doping gas. DETAILED DESCRIPTION

[0014] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to some embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the connotations of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0015] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0016] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0017] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0018] The method for forming a light-transmitting waterproof adhesive layer of the present invention is further described below with reference to examples, but the present invention is not limited thereby. The method of the present invention is intended to provide a method for forming a light-transmitting waterproof adhesive layer that is simple and easy to perform, efficiently forms a light-transmitting waterproof adhesive layer having excellent light transmission, waterproof, and high-temperature resistance, and has the advantages of long life and low cost, thus having broad application prospects and market value.

[0019] The following examples further illustrate the semiconductor wafer processing method of the present invention, but the present invention is not limited thereto. The method of the present invention is intended to provide an improved semiconductor wafer processing method with simple process, high production efficiency, low processing cost, and suitable for industrial promotion and use.

[0020] In one embodiment of the semiconductor wafer processing method of the present invention, the following steps are included:

[0021] Placing a semiconductor wafer in a reaction chamber, introducing H2 and SiH4 gases into the reaction chamber to form a deposition layer on the surface of the semiconductor wafer; and

[0022] Boron doping gas is introduced into the reaction chamber to dope boron atoms on the surface of the semiconductor wafer.

[0023] The present invention first forms a deposition layer on the surface of a semiconductor wafer using H2 and SiH4 gases in a reaction chamber. Subsequently, a boron-doping gas is introduced into the reaction chamber to dope the semiconductor wafer with boron atoms. By adjusting the concentration of the boron-doping gas, localized doping and varying the direction, density, and shape of the polysilicon texture are achieved. This achieves localized doping of the semiconductor wafer, creating regions of reduced conductivity to meet industrial needs. Compared to traditional methods for reducing conductivity, the present invention offers advantages such as a simple process, high production efficiency, and low cost.

[0024] In the present invention, the semiconductor wafer may be a silicon wafer, but is not limited thereto.

[0025] In a preferred embodiment, a semiconductor wafer is placed in a reaction chamber and the temperature is controlled to be 850-1000°C, preferably 950°C. Then, H2 and SiH4 gases are introduced into the reaction chamber to form a deposition layer, such as a silicon-containing deposition layer, on the surface of the semiconductor wafer.

[0026] Then, doping gas (e.g., boron gas) is introduced into the reaction chamber to control the doping amount on the surface of the semiconductor wafer. Specifically, boron gas is introduced into the reaction chamber to control the boron atom doping concentration on the wafer surface to be 5×10 18 to 6×10 19 cm -3This doping concentration can be sufficient to reduce the electrical conductivity of the semiconductor wafer. More preferably, different boron atom doping concentrations can be obtained by dynamically adjusting the concentration or flow of the boron gas, thereby controlling the direction, density and shape of the polysilicon texture.

[0027] Repeat the above steps until the desired conductivity profile is achieved.

[0028] In summary, the present invention first forms a deposition layer on the surface of a semiconductor wafer using H2 and SiH4 gases in a reaction chamber. Subsequently, a boron-doping gas is introduced into the reaction chamber to dope boron atoms onto the surface of the semiconductor wafer. Localized doping and different polysilicon texture directions, densities, and shapes are achieved by adjusting the concentration of the boron-doping gas. In this way, the present invention achieves localized doping of semiconductor wafers, thereby forming regions with reduced electrical conductivity to meet industrial needs. Compared to traditional methods for reducing electrical conductivity, the present invention has the advantages of simple processing, high production efficiency, and low cost.

[0029] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for processing a semiconductor wafer, characterized in that The following steps are involved: The semiconductor wafer is placed in a reaction chamber, and H2 and SiH4 gases are introduced into the reaction chamber to form a deposition layer on the surface of the semiconductor wafer; as well as Boron doping gas is introduced into the reaction chamber to dope boron atoms on the surface of the semiconductor wafer.

2. The method for processing a semiconductor wafer according to claim 1, wherein: The doping concentration of the boron atoms is 5×10 18 to 6×10 19 cm -3 .

3. The method for processing a semiconductor wafer according to claim 1, wherein: In the step of forming the deposition layer, the temperature of the reaction chamber is 850-1000°C.

4. The method for processing a semiconductor wafer according to claim 3, wherein: The temperature of the reaction chamber is 950°C.

5. The method for processing a semiconductor wafer according to claim 1, wherein: The deposited layer is a silicon-containing deposited layer.

6. The method for processing a semiconductor wafer according to claim 1, wherein: Also includes: The concentration of the boron doping gas is dynamically adjusted.