Laminated ceramic electronic component

Abstract

Provided is a laminated ceramic electronic component capable of suppressing the occurrence of cracks in a laminated body. The present invention is provided with a laminated body (10) and a pair of external electrodes (40) disposed at both ends of the laminated body (10), the external electrodes (40) including main surface-side external electrodes (411A). The main-surface-side external electrode (411A) has a main-surface-side base electrode layer (511A), a main-surface-side conductive resin layer (611A) disposed above the main-surface-side base electrode layer (511A), and a main-surface-side plating layer (711A) disposed above the main-surface-side conductive resin layer (611A), and in a cross-sectional view along the lamination direction (T) and the longitudinal direction (L), the thickness of the main-surface-side external electrode (411A) is greater than the thickness of the main-surface-side external electrode (411A). The main surface-side conductive resin layer (611A) has a conductive resin layer recess (611c) that is recessed toward the laminate (10) side at a boundary surface (611k) with the main surface-side plating layer (711A).

Description

Technical Field

[0001] The present invention relates to a multilayer ceramic electronic component. Background Art

[0002] In the past, laminated ceramic capacitors were known as laminated ceramic electronic components. In recent years, laminated ceramic capacitors have been required to have durability under harsh environments such as flexural stress caused by thermal expansion. To address this, a technology using a thermosetting conductive resin paste for the external electrodes of laminated ceramic capacitors has been known. Patent Document 1 is a document illustrating this technology. Patent Document 1 describes a laminated ceramic capacitor having external electrodes having a layered structure in which an electrode layer, obtained by applying a conductive paste by dipping and then sintering it, a conductive epoxy-based thermosetting resin layer, a nickel-plated layer, and a tin-based layer are sequentially laminated.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 11-162771 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The multilayer ceramic capacitor disclosed in Patent Document 1 suppresses cracking in the laminate by sacrificial destruction of the resin layer and stress relaxation due to deformation. However, in recent years, durability requirements have become increasingly stringent, and in such environments, the stress relaxation effect has become less effective, potentially leading to cracking in the laminate.

[0008] An object of the present invention is to provide a multilayer ceramic electronic component capable of suppressing cracks from occurring in a multilayer body.

[0009] Technical solutions to solve problems

[0010] The multilayer ceramic capacitor according to the present invention comprises: a multilayer body comprising a plurality of ceramic layers and a plurality of internal conductor layers alternately stacked in a height direction, and comprising a first main surface and a second main surface opposite to each other in the height direction, a first end surface and a second end surface opposite to each other in a length direction perpendicular to the height direction, and a first side surface and a second side surface opposite to each other in a width direction perpendicular to the height direction and the length direction; and a pair of external electrodes spaced apart from each other and arranged at both ends of the multilayer body in the length direction, the internal conductor layers comprising: a first internal conductor layer led out to the first end surface; and a second internal conductor layer, which is led out to the second end surface, the external electrode includes a main surface side external electrode arranged on at least one of the first main surface and the second main surface, the main surface side external electrode having: a main surface side base electrode layer; a main surface side conductive resin layer, which is arranged on an upper layer than the main surface side base electrode layer; and a main surface side plating layer, which is arranged on an upper layer than the main surface side conductive resin layer, and in a cross-section along the height direction and the length direction, the main surface side conductive resin layer has a conductive resin layer recessed portion that is recessed toward the stacked body side at the boundary surface with the main surface side plating layer.

[0011] Effects of the Invention

[0012] According to the present invention, a multilayer ceramic electronic component can be provided in which cracks can be suppressed from occurring in the multilayer body. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a perspective view of the appearance of a multilayer ceramic capacitor according to an embodiment.

[0014] Figure 2 It is along Figure 1 Cross-sectional view along line II-II.

[0015] Figure 3 It is along Figure 2 Cross-sectional view along line III-III.

[0016] Figure 4 It is along Figure 2 A cross-sectional view taken along line IV-IV.

[0017] Figure 5A yes Figure 2 The enlarged view of the portion indicated by V is a view showing a cross section of the first principal surface side external electrode.

[0018] Figure 5B yes Figure 2 The enlarged view of the portion indicated by V in FIG. 1 is a view showing a cross section of the first main surface side external electrode.

[0019] Figure 6A1 is a diagram illustrating a method for manufacturing a multilayer ceramic capacitor according to an embodiment, and is a diagram illustrating a first step of forming external electrodes on a multilayer body.

[0020] Figure 6B 1 is a diagram illustrating a method for manufacturing a multilayer ceramic capacitor according to an embodiment, and is a diagram illustrating a second step of forming external electrodes on a multilayer body.

[0021] Figure 6C It is a diagram illustrating a method for manufacturing a multilayer ceramic capacitor according to an embodiment, and is a diagram illustrating a third step of forming external electrodes on a multilayer body.

[0022] Figure 7A A diagram showing a dual-structured multilayer ceramic capacitor.

[0023] Figure 7B A diagram showing a triple-structured multilayer ceramic capacitor.

[0024] Figure 7C A diagram showing a quad-structured multilayer ceramic capacitor.

[0025] Description of Reference Numerals

[0026] 1. Multilayer ceramic capacitors (multilayer ceramic electronic components);

[0027] 10 laminates;

[0028] 20 dielectric layer (ceramic layer);

[0029] 30 internal electrode layer (internal conductor layer);

[0030] 31 first internal electrode layer (first internal conductor layer);

[0031] 32 second internal electrode layer (second internal conductor layer);

[0032] 40 external electrodes;

[0033] 411A: first main surface side external electrode (main surface side external electrode);

[0034] 411B first main surface side external electrode (main surface side external electrode);

[0035] 412A: second main surface side external electrode (main surface side external electrode);

[0036] 412B: second main surface side external electrode (main surface side external electrode);

[0037] 511A: first main surface side base electrode layer (main surface side base electrode layer);

[0038] 511B: first main surface side base electrode layer (main surface side base electrode layer);

[0039] 512A: second main surface side base electrode layer (main surface side base electrode layer);

[0040] 512B: second main surface side base electrode layer (main surface side base electrode layer);

[0041] 560a inner end;

[0042] 611A: first main surface side conductive resin layer (main surface side conductive resin layer);

[0043] 611B: first main surface side conductive resin layer (main surface side conductive resin layer);

[0044] 611c conductive resin layer recess;

[0045] 611d: deepest part of the concave portion of the conductive resin layer;

[0046] 611k boundary surface;

[0047] 612A: second main surface side conductive resin layer (main surface side conductive resin layer);

[0048] 612B: second main surface side conductive resin layer (main surface side conductive resin layer);

[0049] 711A 1st main surface side plating layer (main surface side plating layer);

[0050] 711B first main surface side plating layer (main surface side plating layer);

[0051] 712A second main surface side plating layer (main surface side plating layer);

[0052] 712B second main surface side plating layer (main surface side plating layer);

[0053] 810 first conductive resin layer raised portion;

[0054] 810H Height of the raised portion of the first conductive resin layer;

[0055] 810p: apex of the raised portion of the first conductive resin layer;

[0056] 820 second conductive resin layer raised portion;

[0057] 820H Height of the raised portion of the second conductive resin layer;

[0058] 820p: apex of the raised portion of the second conductive resin layer;

[0059] L length direction;

[0060] T stacking direction (height direction);

[0061] W width direction;

[0062] LS1 1st end face;

[0063] LS2 second end face;

[0064] TS1 1st main surface;

[0065] TS2 2nd main surface;

[0066] WS1 lateral 1;

[0067] WS2 Side 2. DETAILED DESCRIPTION

[0068] Below, using Figures 1 to 4 A multilayer ceramic capacitor 1 as a multilayer ceramic electronic component according to an embodiment will be described. Figure 1 It is an external perspective view of a multilayer ceramic capacitor 1 according to the embodiment. Figure 2 It is along Figure 1 1 is a cross-sectional view of the multilayer ceramic capacitor 1 taken along line II-II. Figure 3 It is along Figure 2 1 is a cross-sectional view of the multilayer ceramic capacitor 1 taken along line III-III. Figure 4 It is along Figure 2 1 is a cross-sectional view of the multilayer ceramic capacitor 1 taken along line IV-IV.

[0069] The multilayer ceramic capacitor 1 includes a laminate 10 and external electrodes 40 .

[0070] exist Figures 1 to 4 The XYZ orthogonal coordinate system is shown in FIG. The length direction L of the multilayer ceramic capacitor 1 and the multilayer body 10 corresponds to the X direction. The width direction W of the multilayer ceramic capacitor 1 and the multilayer body 10 corresponds to the Y direction. The stacking direction T, which is the height direction of the multilayer ceramic capacitor 1 and the multilayer body 10, corresponds to the Z direction. Here, Figure 2 The cross section shown is also referred to as the LT cross section. Figure 3 The cross section shown is also referred to as the WT cross section. Figure 4 The cross section shown is also referred to as the LW cross section.

[0071] like Figures 1 to 4 As shown, the stack 10 includes a first main surface TS1 and a second main surface TS2 opposite to each other in the stacking direction T, a first side surface WS1 and a second side surface WS2 opposite to each other in the width direction W perpendicular to the stacking direction T, and a first end surface LS1 and a second end surface LS2 opposite to each other in the length direction L perpendicular to the stacking direction T and the width direction W.

[0072] like Figure 1 As shown, the laminate 10 has a generally rectangular parallelepiped shape. Furthermore, the dimension of the laminate 10 in the longitudinal direction (L) is not necessarily longer than the dimension in the width direction (W). The corners and ridges of the laminate 10 are preferably rounded. A corner is where three surfaces of the laminate intersect, and a ridge is where two surfaces of the laminate intersect. Furthermore, concavities and convexities may be formed on part or all of the surface constituting the laminate 10.

[0073] The dimensions of the laminate 10 are not particularly limited, but if the dimension in the longitudinal direction L of the laminate 10 is defined as the L dimension, the L dimension is preferably 0.2 mm or more and 10 mm or less. Furthermore, if the dimension in the stacking direction T of the laminate 10 is defined as the T dimension, the T dimension is preferably 0.1 mm or more and 10 mm or less. Furthermore, if the dimension in the width direction W of the laminate 10 is defined as the W dimension, the W dimension is preferably 0.1 mm or more and 10 mm or less.

[0074] like Figure 2 as well as Figure 3 As shown, the laminate 10 includes an inner layer portion 11 , and a first main surface side outer layer portion 12A and a second main surface side outer layer portion 12B arranged in the lamination direction T so as to sandwich the inner layer portion 11 .

[0075] The inner portion 11 includes a plurality of dielectric layers 20, which are ceramic layers, and a plurality of internal electrode layers 30, which are internal conductor layers. In the stacking direction T, the inner portion 11 includes the internal electrode layer 30 located closest to the first main surface TS1 to the internal electrode layer 30 located closest to the second main surface TS2. In the inner portion 11, the plurality of internal electrode layers 30 are arranged opposite each other with the dielectric layer 20 interposed therebetween. The inner portion 11 generates capacitance and essentially functions as a capacitor.

[0076] The plurality of dielectric layers 20 are formed of a dielectric material. For example, the dielectric material may be a dielectric ceramic containing BaTiO3, CaTiO3, SrTiO3, or CaZrO3. Alternatively, the dielectric material may be a material containing these main components with the addition of secondary components such as Mn compounds, Fe compounds, Cr compounds, Co compounds, or Ni compounds.

[0077] The thickness of dielectric layer 20 is preferably not less than 0.5 μm and not more than 30 μm. The number of dielectric layers 20 stacked is preferably not less than 10 and not more than 1500. The number of dielectric layers 20 is the sum of the number of dielectric layers in inner layer portion 11 and the number of dielectric layers in first principal surface-side outer layer portion 12A and second principal surface-side outer layer portion 12B.

[0078] The plurality of internal electrode layers 30 include a plurality of first internal electrode layers 31 serving as first internal conductor layers and a plurality of second internal electrode layers 32 serving as second internal conductor layers. The plurality of first internal electrode layers 31 are disposed on the plurality of dielectric layers 20. The plurality of second internal electrode layers 32 are disposed on the plurality of dielectric layers 20. The plurality of first internal electrode layers 31 and the plurality of second internal electrode layers 32 are alternately disposed in the stacking direction T of the laminate 10, with the dielectric layers 20 interposed therebetween. The first internal electrode layers 31 and the second internal electrode layers 32 are disposed with the dielectric layers 20 interposed therebetween. In the following description, when the first internal electrode layers 31 and the second internal electrode layers 32 do not need to be distinguished from each other, the first internal electrode layers 31 and the second internal electrode layers 32 may be collectively referred to as the internal electrode layers 30.

[0079] The first internal electrode layer 31 includes a first opposing portion 31A opposing the second internal electrode layer 32 and a first lead portion 31B led out from the first opposing portion 31A to the first end surface LS1. The first lead portion 31B is exposed on the first end surface LS1.

[0080] The second internal electrode layer 32 includes a second opposing portion 32A opposing the first internal electrode layer 31 and a second lead portion 32B led out from the second opposing portion 32A to the second end surface LS2. The second lead portion 32B is exposed on the second end surface LS2.

[0081] In the embodiment, the first opposing portion 31A and the second opposing portion 32A face each other with the dielectric layer 20 interposed therebetween, thereby forming capacitance and exhibiting capacitor characteristics.

[0082] The shapes of the first opposing portion 31A and the second opposing portion 32A are not particularly limited, but are preferably rectangular. However, the corners of the rectangular shape may be rounded or angled. The shapes of the first lead portion 31B and the second lead portion 32B are not particularly limited, but are preferably rectangular. However, the corners of the rectangular shape may be rounded or angled.

[0083] The first opposing portion 31A and the first lead portion 31B may have the same width W dimension, or one of them may be smaller. The second opposing portion 32A and the second lead portion 32B may have the same width W dimension, or one of them may be smaller.

[0084] The first internal electrode layer 31 and the second internal electrode layer 32 are formed of a suitable conductive material such as a metal such as Ni, Cu, Ag, Pd, or Au, or an alloy containing at least one of these metals. When an alloy is used, the first internal electrode layer 31 and the second internal electrode layer 32 may be formed of, for example, an Ag-Pd alloy.

[0085] The thickness of each of the first internal electrode layer 31 and the second internal electrode layer 32 is preferably about 0.2 μm to 2.0 μm, for example. The total number of the first internal electrode layers 31 and the second internal electrode layers 32 is preferably 10 to 1500.

[0086] The first principal surface-side outer layer portion 12A is located on the first principal surface TS1 side of the laminate 10. The first principal surface-side outer layer portion 12A is an aggregate of a plurality of dielectric layers 20 located between the first principal surface TS1 and the internal electrode layer 30 closest to the first principal surface TS1. The dielectric layers 20 used in the first principal surface-side outer layer portion 12A may be the same as the dielectric layers 20 used in the internal layer portion 11, or may be dielectric layers composed of different materials.

[0087] The second main surface side outer layer portion 12B is located on the second main surface TS2 side of the laminate 10. The second main surface side outer layer portion 12B is an aggregate of a plurality of dielectric layers 20 located between the second main surface TS2 and the internal electrode layer 30 closest to the second main surface TS2. The dielectric layers 20 used in the second main surface side outer layer portion 12B may be the same as the dielectric layers 20 used in the internal layer portion 11, or may be dielectric layers made of different materials.

[0088] Furthermore, the laminate 10 includes an opposing electrode portion 11E. The opposing electrode portion 11E is a portion where the first opposing portion 31A of the first internal electrode layer 31 and the second opposing portion 32A of the second internal electrode layer 32 face each other. The opposing electrode portion 11E is configured as a portion of the inner layer portion 11. Figure 4 : denoted by : W and L. The range of the opposing electrode portion 11E in the width direction W and the length direction L. The opposing electrode portion 11E is also referred to as a capacitor effective portion.

[0089] In addition, the stacked body 10 has a side outer layer portion WG. The side outer layer portion WG has a first side outer layer portion WG1 and a second side outer layer portion WG2. The first side outer layer portion WG1 is a portion including the dielectric layer 20 located between the opposing electrode portion 11E and the first side WS1. The second side outer layer portion WG2 is a portion including the dielectric layer 20 located between the opposing electrode portion 11E and the second side WS2. Figure 3 as well as Figure 4, the range of the first side outer layer portion WG1 and the second side outer layer portion WG2 in the width direction W is shown. In addition, the side outer layer portion is also called a W gap or a side gap.

[0090] In addition, the stacked body 10 has an end face side outer layer portion LG. The end face side outer layer portion LG has a first end face side outer layer portion LG1 and a second end face side outer layer portion LG2. The first end face side outer layer portion LG1 is a portion including the dielectric layer 20 located between the opposing electrode portion 11E and the first end face LS1. The second end face side outer layer portion LG2 is a portion including the dielectric layer 20 located between the opposing electrode portion 11E and the second end face LS2. Figure 2 as well as Figure 4 , the range of the first end surface side outer layer portion LG1 and the second end surface side outer layer portion LG2 in the longitudinal direction L is shown. In addition, the end surface side outer layer portion is also called an L gap or an end gap.

[0091] The external electrode 40 includes a first external electrode 40A arranged on the first end surface LS1 side and a second external electrode 40B arranged on the second end surface LS2 side.

[0092] The first external electrode 40A is disposed on the first end surface LS1. The first external electrode 40A is connected to the first internal electrode layer 31. The first external electrode 40A is disposed on a portion of the first main surface TS1 and a portion of the second main surface TS2. In the embodiment, the first external electrode 40A is formed to extend from the first end surface LS1 to a portion of the first main surface TS1 and a portion of the second main surface TS2, and to a portion of the first side surface WS1 and a portion of the second side surface WS2.

[0093] The second external electrode 40B is disposed on the second end surface LS2. The second external electrode 40B is connected to the second internal electrode layer 32. The second external electrode 40B is disposed on a portion of the first main surface TS1 and a portion of the second main surface TS2. In the embodiment, the second external electrode 40B is formed so as to extend from the second end surface LS2 to a portion of the first main surface TS1 and a portion of the second main surface TS2, and to a portion of the first side surface WS1 and a portion of the second side surface WS2.

[0094] As described above, within the laminate 10, the first opposing portion 31A of the first internal electrode layer 31 and the second opposing portion 32A of the second internal electrode layer 32 oppose each other via the dielectric layer 20, thereby forming a capacitor. Consequently, capacitor characteristics are exhibited between the first external electrode 40A connected to the first internal electrode layer 31 and the second external electrode 40B connected to the second internal electrode layer 32.

[0095] The first external electrode 40A includes a first base electrode layer 50A containing a metal component, a first conductive resin layer 60A disposed on the first base electrode layer 50A, and a first plated layer 70A disposed on the first conductive resin layer 60A. The first plated layer 70A includes a first Ni plated layer 71A as a lower plated layer and a first Sn plated layer 72A as an upper plated layer.

[0096] The second external electrode 40B includes a second base electrode layer 50B containing a metal component, a second conductive resin layer 60B disposed on the second base electrode layer 50B, and a second plated layer 70B disposed on the second conductive resin layer 60B. The second plated layer 70B includes a second Ni plated layer 71B as a lower plated layer and a second Sn plated layer 72B as an upper plated layer.

[0097] Here, the basic structure of the layers constituting the first external electrode 40A and the second external electrode 40B is the same. Furthermore, the first external electrode 40A and the second external electrode 40B are substantially plane-symmetrical with respect to the LW cross-section taken at the center of the longitudinal direction L of the multilayer ceramic capacitor 1. Therefore, when there is no need to distinguish between the first external electrode 40A and the second external electrode 40B, the first external electrode 40A and the second external electrode 40B are sometimes collectively referred to as the external electrode 40. Furthermore, when there is no need to distinguish between the first foundation electrode layer 50A and the second foundation electrode layer 50B, the first foundation electrode layer 50A and the second foundation electrode layer 50B are sometimes collectively referred to as the foundation electrode layer 50. Furthermore, when there is no need to distinguish between the first conductive resin layer 60A and the second conductive resin layer 60B, the first conductive resin layer 60A and the second conductive resin layer 60B are sometimes collectively referred to as the conductive resin layer 60. In addition, when there is no need to specifically distinguish between the first plating layer 70A and the second plating layer 70B, the first plating layer 70A and the second plating layer 70B are sometimes collectively referred to as the plating layer 70. In addition, when there is no need to specifically distinguish between the first Ni plating layer 71A and the second Ni plating layer 71B, the first Ni plating layer 71A and the second Ni plating layer 71B are sometimes collectively referred to as the Ni plating layer 71. In addition, when there is no need to specifically distinguish between the first Sn plating layer 72A and the second Sn plating layer 72B, the first Sn plating layer 72A and the second Sn plating layer 72B are sometimes collectively referred to as the Sn plating layer 72.

[0098] The foundation electrode layer 50 includes a first foundation electrode layer 50A and a second foundation electrode layer 50B.

[0099] The first foundation electrode layer 50A is disposed on the first end surface LS1. The first foundation electrode layer 50A is connected to the first internal electrode layer 31. In the embodiment, the first foundation electrode layer 50A is formed to extend from the first end surface LS1 to a portion of the first main surface TS1, a portion of the second main surface TS2, a portion of the first side surface WS1, and a portion of the second side surface WS2.

[0100] The second foundation electrode layer 50B is disposed on the second end surface LS2. The second foundation electrode layer 50B is connected to the second internal electrode layer 32. In the embodiment, the second foundation electrode layer 50B is formed to extend from the second end surface LS2 to a portion of the first main surface TS1, a portion of the second main surface TS2, a portion of the first side surface WS1, and a portion of the second side surface WS2.

[0101] The first and second base electrode layers 50A and 50B of the embodiment are sintered layers. The sintered layers preferably contain a metal component and either a glass component or a ceramic component, or both. This improves the adhesion between the laminate 10 and the base electrode layer. The metal component may include, for example, at least one selected from Cu, Ni, Ag, Pd, an Ag-Pd alloy, Au, and the like. The glass component may include, for example, at least one selected from B, Si, Ba, Mg, Al, Li, and the like. The presence of a glass component facilitates sintering of the metal component in the base electrode layer, thereby accelerating sintering. The ceramic component may be the same type of ceramic material as that of the dielectric layer 20, or a different type. The ceramic component may include, for example, at least one selected from BaTiO3, CaTiO3, (Ba,Ca)TiO3, SrTiO3, CaZrO3, and the like.

[0102] The sintered layer is obtained, for example, by applying a conductive paste containing glass and metal to a laminate and sintering it. The sintered layer can be obtained by simultaneously sintering a laminated chip having internal electrodes and a dielectric layer and the conductive paste applied to the laminated chip, or it can be obtained by sintering the laminated chip having internal electrodes and a dielectric layer to obtain a laminate, then applying the conductive paste to the laminate and sintering it. In addition, when the laminated chip having internal electrodes and a dielectric layer and the conductive paste applied to the laminated chip are sintered simultaneously, the sintered layer is preferably formed by sintering a conductive paste to which a ceramic material has been added instead of the glass component. In this case, it is particularly preferred to use a ceramic material of the same type as the dielectric layer 20 as the added ceramic material. The sintered layer can also be a multilayer structure.

[0103] The thickness of the first foundation electrode layer 50A located at the first end surface LS1 in the longitudinal direction L is preferably about 2 μm or more and 220 μm or less at the center portion in the stacking direction T and the width direction W of the first foundation electrode layer 50A.

[0104] The thickness of the second foundation electrode layer 50B located at the second end surface LS2 in the longitudinal direction L is preferably about 2 μm or more and 220 μm or less at the center portion in the stacking direction T and the width direction W of the second foundation electrode layer 50B.

[0105] When the first base electrode layer 50A is also provided on a portion of at least one of the first main surface TS1 or the second main surface TS2, the thickness of the first base electrode layer 50A provided on the portion in the stacking direction T is preferably greater than 3 μm and less than 40 μm in the central portion of the length direction L and the width direction W of the first base electrode layer 50A provided on the portion.

[0106] When the first base electrode layer 50A is also provided on a portion of at least one surface of the first side surface WS1 or the second side surface WS2, the thickness of the first base electrode layer 50A provided on the portion in the width direction is preferably greater than 3 μm and less than 40 μm in the central portion of the length direction L and the stacking direction T of the first base electrode layer 50A provided on the portion.

[0107] When a second base electrode layer 50B is also provided on a portion of at least one of the first main surface TS1 or the second main surface TS2, the thickness of the second base electrode layer 50B provided on the portion in the stacking direction T is preferably greater than 3 μm and less than 40 μm in the central portion of the length direction L and the width direction W of the second base electrode layer 50B provided on the portion.

[0108] When the second base electrode layer 50B is also provided on a portion of at least one surface of the first side surface WS1 or the second side surface WS2, the thickness of the second base electrode layer 50B provided on the portion in the width direction is preferably greater than 3 μm and less than 40 μm in the central portion in the length direction L and the stacking direction T of the second base electrode layer 50B provided on the portion.

[0109] The external electrode 40 includes a conductive resin layer 60 including a resin component and a metal component and disposed on the base electrode layer 50 .

[0110] The conductive resin layer 60 includes a first conductive resin layer 60A and a second conductive resin layer 60B.

[0111] The first conductive resin layer 60A is configured to cover the first foundation electrode layer 50A. In the embodiment, the first conductive resin layer 60A is formed to extend from the first end surface LS1 to a portion of the first principal surface TS1, a portion of the second principal surface TS2, and a portion of the first side surface WS1 and a portion of the second side surface WS2. The second conductive resin layer 60B is configured to cover the second foundation electrode layer 50B. In the embodiment, the second conductive resin layer 60B is formed to extend from the second end surface LS2 to a portion of the first principal surface TS1, a portion of the second principal surface TS2, and a portion of the first side surface WS1 and a portion of the second side surface WS2. The length L of the first conductive resin layer 60A on the first principal surface TS1 and the second principal surface TS2 is longer than the length L of the first foundation electrode layer 50A on the first principal surface TS1 and the second principal surface TS2. Furthermore, the length L of the second conductive resin layer 60B on the first and second principal surfaces TS1 and TS2 is longer than the length L of the second foundation electrode layer 50B on the first and second principal surfaces TS1 and TS2 .

[0112] The thickness of the first conductive resin layer 60A in the longitudinal direction L located on the first end surface LS1 side is preferably about 5 μm or more and 200 μm or less in the center portion in the stacking direction T and the width direction W of the first conductive resin layer 60A.

[0113] The thickness of the second conductive resin layer 60B in the longitudinal direction L located on the second end surface LS2 side is preferably about 5 μm or more and 200 μm or less in the center portion in the stacking direction T and the width direction W of the second conductive resin layer 60B.

[0114] When the first conductive resin layer 60A is also provided on a portion of the first main surface TS1 side and a portion of the second main surface TS2 side, the thickness of the first conductive resin layer 60A provided in the portion in the stacking direction T is, for example, greater than 5 μm and less than 200 μm in the central portion of the first conductive resin layer 60A provided in the portion in the length direction L and the width direction W.

[0115] When the first conductive resin layer 60A is also provided on a portion of the first side surface WS1 and a portion of the second side surface WS2, the thickness of the first conductive resin layer 60A provided in the portion in the width direction is preferably greater than 5 μm and less than 200 μm in the central portion of the first conductive resin layer 60A provided in the portion in the length direction L and the stacking direction T.

[0116] When the second conductive resin layer 60B is also provided on a portion of the first main surface TS1 side and a portion of the second main surface TS2 side, the thickness of the second conductive resin layer 60B provided in the portion in the stacking direction T is preferably greater than 5 μm and less than 200 μm in the central portion of the length direction L and the width direction W of the second conductive resin layer 60B provided in the portion.

[0117] When the second conductive resin layer 60B is also provided on a part of the first side surface WS1 and a part of the second side surface WS2, the thickness of the second conductive resin layer 60B provided in the width direction of the portion is preferably greater than 5 μm and less than 200 μm in the central part of the length direction L and the stacking direction T of the second conductive resin layer 60B provided in the portion.

[0118] The conductive resin layer 60 is disposed on the base electrode layer 50. Furthermore, the plating layer 70 is disposed so as to cover the conductive resin layer 60. The plating layer 70 includes a Ni plating layer 71 and a Sn plating layer 72.

[0119] The conductive resin layer 60 includes a resin portion as a resin component and a conductive filler as filler powder dispersed in the resin portion.

[0120] The resin portion of the conductive resin layer 60 may also include at least one selected from various known thermosetting resins, such as epoxy resin, phenoxy resin, phenolic resin, polyurethane resin, silicone resin, and polyimide resin. Among these, epoxy resin is one of the most suitable resins due to its excellent heat resistance, moisture resistance, and adhesion. Furthermore, the resin portion of the conductive resin layer 60 preferably includes a curing agent along with the thermosetting resin. When epoxy resin is used as the base resin, the epoxy resin curing agent may also be various known compounds, such as phenolic, amine, acid anhydride, imidazole, active ester, and amide-imide compounds.

[0121] Because the conductive resin layer 60 includes such a resin portion, it is more flexible than, for example, the base electrode layer 50, which is a fired product composed of a plating film, a metal component, and a glass component. Therefore, even when the multilayer ceramic capacitor 1 is subjected to physical shock or shock resulting from thermal cycling, the conductive resin layer 60 functions as a buffer layer. Consequently, the conductive resin layer 60 suppresses the occurrence of cracks in the multilayer ceramic capacitor 1.

[0122] The conductive fillers are dispersed and present in the resin portion in a substantially uniform distribution. The conductive fillers primarily contribute to the electrical conductivity of the conductive resin layer 60. Specifically, the contact between the plurality of conductive fillers forms an electrical path within the conductive resin layer 60, providing electrical continuity between the base electrode layer 50 and the plated layer 70.

[0123] The metal constituting the conductive filler may be Ag alone, or an alloy containing Ag or a metal powder coated with Ag on the surface of the metal powder may be used. Ag has the lowest resistivity among metals and is therefore suitable for electrode materials. In addition, since Ag is a noble metal, it is not easily oxidized and has high weather resistance. Therefore, Ag metal powder is suitable as a conductive filler. In addition, when using a metal powder coated with Ag on the surface of the metal powder, it is preferred to use Cu, Ni, Sn, Bi or an alloy powder containing these as the metal powder.

[0124] Furthermore, the conductive filler may be a conductive filler in which Cu or Ni has been subjected to an oxidation resistance treatment. Furthermore, the conductive filler may be a metal powder coated with Sn, Ni, or Cu on its surface. When using a metal powder coated with Sn, Ni, or Cu on its surface, the metal powder is preferably Ag, Cu, Ni, Sn, Bi, or an alloy thereof. The conductive filler more preferably has Cu particles as a core. Furthermore, it is more preferred that at least a portion of the surface of the Cu particles be coated with a Cu-Ag alloy of Cu and Ag. At least a portion of the surface of the Cu particles may also be coated with Ag. This improves affinity with Ni plating and improves electrical properties.

[0125] The shape of the conductive filler is not particularly limited. Spherical or flat conductive fillers can be used. A mixture of spherical metal powder and flat metal powder is preferably used. In other words, the conductive filler powder used as the filler powder includes flat powder or spherical powder.

[0126] The average particle size of the conductive filler may be, for example, 0.3 μm or more and 10 μm or less.

[0127] The average particle size of the conductive filler contained in the conductive resin layer 60 is measured by calculation using a laser diffraction particle size measurement method in accordance with ISO 13320, regardless of the shape of the conductive filler.

[0128] The plating layer 70 includes a first plating layer 70A and a second plating layer 70B.

[0129] The first plating layer 70A is arranged to cover the first conductive resin layer 60A. In the embodiment, the first plating layer 70A is arranged to extend from the first end surface LS1 to a portion of the first main surface TS1 and a portion of the second main surface TS2, and a portion of the first side surface WS1 and a portion of the second side surface WS2.

[0130] The second plating layer 70B is arranged to cover the second conductive resin layer 60B. In the embodiment, the second plating layer 70B is arranged to extend from the first end surface LS1 to a portion of the first main surface TS1 and a portion of the second main surface TS2, and a portion of the first side surface WS1 and a portion of the second side surface WS2.

[0131] The plating layer 70 preferably has a two-layer structure consisting of a Ni plating layer 71 and a Sn plating layer 72. A first Sn plating layer 72A is preferably disposed on the first Ni plating layer 71A, and a second Sn plating layer 72B is preferably disposed on the second Ni plating layer 71B. The Ni plating layer 71 prevents the base electrode layer 50 and the conductive resin layer 60 from being corroded by the solder during assembly of the multilayer ceramic capacitor 1. The Sn plating layer 72 improves the wettability of the solder during assembly of the multilayer ceramic capacitor 1. This facilitates assembly of the multilayer ceramic capacitor 1.

[0132] The thickness of each of the first Ni plating layer 71A and the first Sn plating layer 72A is preferably 1 μm or more and 15 μm or less.

[0133] The thickness of each of the second Ni plating layer 71B and the second Sn plating layer 72B is preferably 1 μm or more and 15 μm or less.

[0134] The above is the basic structure of the multilayer ceramic capacitor 1 according to the embodiment. Furthermore, if the dimension of the multilayer ceramic capacitor 1 in the longitudinal direction L, including the multilayer body 10 and the external electrodes 40, is defined as the L dimension, then the L dimension is preferably 0.2 mm or more and 10 mm or less. Furthermore, if the dimension of the multilayer ceramic capacitor 1 in the stacking direction T is defined as the T dimension, then the T dimension is preferably 0.05 mm or more and 10 mm or less. Furthermore, if the dimension of the multilayer ceramic capacitor 1 in the width direction W is defined as the W dimension, then the W dimension is preferably 0.1 mm or more and 10 mm or less.

[0135] The multilayer ceramic capacitor 1 of the embodiment having the above-described basic structure has the following features in the external electrodes 40 , namely, the first external electrode 40A and the second external electrode 40B.

[0136] The external electrode 40 of the embodiment includes a main surface side external electrode arranged on at least one of the first main surface TS1 and the second main surface TS2. In detail, as described above, the first external electrode 40A of the embodiment is arranged on the first end surface LS1, and is formed by extending from the first end surface LS1 to a portion of the first main surface TS1 and a portion of the second main surface TS2, and a portion of the first side surface WS1 and a portion of the second side surface WS2. That is, the first external electrode 40A of the embodiment includes Figure 2 as well as Figure 4As shown in FIG. 1 , the first end surface side external electrode 400A as the end surface side external electrode is arranged on the first end surface LS1, the first main surface side external electrode 411A as the main surface side external electrode is arranged on the first main surface TS1, the second main surface side external electrode 412A as the main surface side external electrode is arranged on the second main surface TS2, and the like. Figure 4 As shown, the first side surface side external electrode 421A is arranged on the first side surface WS1, and the second side surface side external electrode 422A is arranged on the second side surface WS2.

[0137] As described above, the first external electrode 40A includes a first base electrode layer 50A, a first conductive resin layer 60A disposed on the first base electrode layer 50A, and a plating layer 70A disposed on the first conductive resin layer 60A. Furthermore, in the embodiment, the first base electrode layer 50A is formed to extend from the first end surface LS1 to a portion of the first main surface TS1, a portion of the second main surface TS2, and a portion of the first side surface WS1 and a portion of the second side surface WS2. The first conductive resin layer 60A is disposed so as to cover the first base electrode layer 50A, and the first plating layer 70A is disposed so as to cover the first conductive resin layer 60A.

[0138] That is, Figure 2 as well as Figure 4 As shown, the first end face-side external electrode 400A of the embodiment includes a first end face-side base electrode layer 500A disposed on the first end face LS1, a first end face-side conductive resin layer 600A formed above the first end face-side conductive resin layer 500A, and a first end face-side plating layer 700A formed above the first end face-side conductive resin layer 600A. The first end face-side base electrode layer 500A is a portion of the first base electrode layer 50A. The first end face-side conductive resin layer 600A is a portion of the first conductive resin layer 60A. The first end face-side plating layer 700A is a portion of the first plating layer 70A and includes a first Ni plating layer 71A and a first Sn plating layer 72A formed on the first Ni plating layer 71A.

[0139] like Figure 2As shown, the first main surface-side external electrode 411A of the embodiment includes a first main surface-side base electrode layer 511A as a main surface-side base electrode layer disposed on the first main surface TS1, a first main surface-side conductive resin layer 611A as a main surface-side conductive resin layer formed above the first main surface-side base electrode layer 511A, and a first main surface-side plated layer 711A as a main surface-side plated layer formed above the first main surface-side conductive resin layer 611A. The first main surface-side base electrode layer 511A is part of the first base electrode layer 50A. The first main surface-side conductive resin layer 611A is part of the first conductive resin layer 60A. The first main surface-side plated layer 711A is part of the first plated layer 70A and includes a first Ni plated layer 71A and a first Sn plated layer 72A formed on the first Ni plated layer 71A.

[0140] like Figure 2 As shown, the second main surface-side external electrode 412A of the embodiment includes a second main surface-side base electrode layer 512A as a main surface-side base electrode layer disposed on the second main surface TS2, a second main surface-side conductive resin layer 612A as a main surface-side conductive resin layer formed above the second main surface-side base electrode layer 512A, and a second main surface-side plated layer 712A as a main surface-side plated layer formed above the second main surface-side conductive resin layer 612A. The second main surface-side base electrode layer 512A is part of the first base electrode layer 50A. The second main surface-side conductive resin layer 612A is part of the first conductive resin layer 60A. The second main surface-side plated layer 712A is part of the first plated layer 70A and includes a first Ni plated layer 71A and a first Sn plated layer 72A formed on the first Ni plated layer 71A.

[0141] like Figure 4 As shown, the first-side external electrode 421A of the embodiment includes a first-side base electrode layer 521A disposed on the first side surface WS1, a first-side conductive resin layer 621A formed above the first-side base electrode layer 521A, and a first-side plated layer 721A formed above the first-side conductive resin layer 621A. The first-side base electrode layer 521A is part of the first base electrode layer 50A. The first-side conductive resin layer 621A is part of the first conductive resin layer 60A. The first-side plated layer 721A is part of the first plated layer 70A and includes a first Ni plated layer 71A and a first Sn plated layer 72A formed on the first Ni plated layer 71A.

[0142] like Figure 4As shown, the second-side external electrode 422A of the embodiment includes a second-side base electrode layer 522A disposed on the second side surface WS2, a second-side conductive resin layer 622A formed above the second-side base electrode layer 522A, and a second-side plated layer 722A formed above the second-side conductive resin layer 622A. The second-side base electrode layer 522A is part of the first base electrode layer 50A. The second-side conductive resin layer 622A is part of the first conductive resin layer 60A. The second-side plated layer 722A is part of the first plated layer 70A and includes a first Ni plated layer 71A and a first Sn plated layer 72A on the first Ni plated layer 71A.

[0143] The thickness of each of the first Ni plating layer 71A and the first Sn plating layer 72A in the first end surface side plating layer 700A is preferably, for example, 5 μm or more and 10 μm or less.

[0144] The thickness of each of the first Ni plating layer 71A and the first Sn plating layer 72A in the first main surface plating layer 711A, the second main surface plating layer 712A, the first side surface plating layer 721A, and the second side surface plating layer 722A is preferably 1 μm or more and 4 μm or less.

[0145] As described above, the second external electrode 40B of the embodiment is arranged on the second end surface LS2, and is formed by extending from the second end surface LS2 to a portion of the first main surface TS1 and a portion of the second main surface TS2, and a portion of the first side surface WS1 and a portion of the second side surface WS2. That is, the second external electrode 40B of the embodiment includes Figure 2 As shown, the second end surface side external electrode 400B as the end surface side external electrode is arranged on the first end surface LS1, the first main surface side external electrode 411B as the main surface side external electrode is arranged on the first main surface TS1, the second main surface side external electrode 412B as the main surface side external electrode is arranged on the second main surface TS2, Figure 4 As shown, the first side surface side external electrode 421B is arranged on the first side surface WS1, and the second side surface side external electrode 422B is arranged on the second side surface WS2.

[0146] As described above, the second external electrode 40B includes a second base electrode layer 50B, a second conductive resin layer 60B disposed on the second base electrode layer 50B, and a second plating layer 70B disposed on the second conductive resin layer 60B. Furthermore, in the embodiment, the second base electrode layer 50B is formed to extend from the second end surface LS2 to a portion of the first main surface TS1, a portion of the second main surface TS2, a portion of the first side surface WS1, and a portion of the second side surface WS2. The second conductive resin layer 60B is disposed so as to cover the second base electrode layer 50B, and the second plating layer 70B is disposed so as to cover the second conductive resin layer 60B.

[0147] That is, Figure 2 as well as Figure 4 As shown, the second end face-side external electrode 400B of the embodiment includes a second end face-side base electrode layer 500B disposed on the second end face LS2, a second end face-side conductive resin layer 600B formed above the second end face-side conductive resin layer 500B, and a second end face-side plating layer 700B formed above the second end face-side conductive resin layer 600B. The second end face-side base electrode layer 500B is a portion of the second base electrode layer 50B. The second end face-side conductive resin layer 600B is a portion of the second conductive resin layer 60B. The second end face-side plating layer 700B is a portion of the second plating layer 70B and includes a second Ni plating layer 71B and a second Sn plating layer 72B formed on the second Ni plating layer 71B.

[0148] like Figure 2 As shown, the first main surface-side external electrode 411B of the embodiment includes a first main surface-side base electrode layer 511B as a main surface-side base electrode layer disposed on the first main surface TS1, a first main surface-side conductive resin layer 611B as a main surface-side conductive resin layer formed above the first main surface-side base electrode layer 511B, and a first main surface-side plated layer 711B as a main surface-side plated layer formed above the first main surface-side conductive resin layer 611B. The first main surface-side base electrode layer 511B is part of the second base electrode layer 50B. The first main surface-side conductive resin layer 611B is part of the second conductive resin layer 60B. The first main surface-side plated layer 711B is part of the second plated layer 70B and includes a second Ni plated layer 71B and a second Sn plated layer 72B formed on the second Ni plated layer 71B.

[0149] like Figure 2As shown, the second main surface-side external electrode 412B of the embodiment includes a second main surface-side base electrode layer 512B as a main surface-side base electrode layer disposed on the second main surface TS2, a second main surface-side conductive resin layer 612B as a main surface-side conductive resin layer formed above the second main surface-side base electrode layer 512B, and a second main surface-side plated layer 712B as a main surface-side plated layer formed above the second main surface-side conductive resin layer 612B. The second main surface-side base electrode layer 512B is part of the second base electrode layer 50B. The second main surface-side conductive resin layer 612B is part of the second conductive resin layer 60B. The second main surface-side plated layer 712B is part of the second plated layer 70B and includes a second Ni plated layer 71B and a second Sn plated layer 72B formed on the second Ni plated layer 71B.

[0150] like Figure 4 As shown, the first-side external electrode 421B of the embodiment includes a first-side base electrode layer 521B disposed on the first side surface WS1, a first-side conductive resin layer 621B formed above the first-side base electrode layer 521B, and a first-side plated layer 721B formed above the first-side conductive resin layer 621B. The first-side base electrode layer 521B is part of the second base electrode layer 50B. The first-side conductive resin layer 621B is part of the second conductive resin layer 60B. The first-side plated layer 721B is part of the second plated layer 70B and includes a second Ni plated layer 71B and a second Sn plated layer 72B formed on the second Ni plated layer 71B.

[0151] like Figure 4 As shown, the second-side external electrode 422B of the embodiment includes a second-side base electrode layer 522B disposed on the second side surface WS2, a second-side conductive resin layer 622B formed above the second-side base electrode layer 522B, and a second-side plated layer 722B formed above the second-side conductive resin layer 622B. The second-side base electrode layer 522B is part of the second base electrode layer 50B. The second-side conductive resin layer 622B is part of the second conductive resin layer 60B. The second-side plated layer 722B is part of the second plated layer 70B and includes a second Ni plated layer 71B and a second Sn plated layer 72B formed on the second Ni plated layer 71B.

[0152] The thickness of each of the second Ni plating layer 71B and the second Sn plating layer 72B in the second end surface side plating layer 700B is preferably, for example, not less than 5 μm and not more than 10 μm.

[0153] The thickness of each of the second Ni plating layer 71B and the second Sn plating layer 72B in the first main surface plating layer 711B, the second main surface plating layer 712B, the first side surface plating layer 721B, and the second side surface plating layer 722B is preferably 1 μm or more and 4 μm or less.

[0154] Figure 2 The LT cross section of the multilayer ceramic capacitor 1 and the laminate 10 along the stacking direction T and the longitudinal direction L is shown. In this LT cross section, the first main surface side external electrode 411A of the first external electrode 40A has a first main surface side recessed portion 510A that is recessed toward the laminate 10 side. The first main surface side recessed portion 510A is formed on the surface of the first main surface side external electrode 411A. The first main surface side recessed portion 510A has a width direction W that is perpendicular to the LT cross section, i.e., Figure 2 The first principal surface side recess 510A may be formed over the entire length of the first principal surface side external electrode 411A along the width direction W. The first principal surface side recess 510A is disposed approximately near the center of the first principal surface side external electrode 411A in the longitudinal direction L.

[0155] like Figure 2 As shown, the second main surface side external electrode 412A of the first external electrode 40A has a second main surface side recessed portion 520A that is recessed toward the laminate 10 side in the LT cross section. The second main surface side recessed portion 520A is formed on the surface of the second main surface side external electrode 412A. The second main surface side recessed portion 520A has a width direction W that is perpendicular to the LT cross section, i.e., Figure 2 The second main surface side recess 520A may be formed over the entire length of the second main surface side external electrode 412A along the width direction W. The second main surface side recess 520A is disposed approximately near the center of the second main surface side external electrode 412A in the longitudinal direction L.

[0156] like Figure 2 As shown, the first main surface side external electrode 411B of the second external electrode 40B has a first main surface side recessed portion 510B that is recessed toward the laminate 10 side in the LT cross section. The first main surface side recessed portion 510B is formed on the surface of the first main surface side external electrode 411B. The first main surface side recessed portion 510B has a width direction W that is perpendicular to the LT cross section, i.e., Figure 2 The first principal surface side recess 510B may be formed over the entire length of the first principal surface side external electrode 411B along the width direction W. The first principal surface side recess 510B is disposed approximately near the center of the first principal surface side external electrode 411B in the longitudinal direction L.

[0157] like Figure 2As shown, the second main surface side external electrode 412B of the second external electrode 40B has a second main surface side recessed portion 520B that is recessed toward the laminate 10 side in the LT cross section. The second main surface side recessed portion 520B is formed on the surface of the second main surface side external electrode 412B. The second main surface side recessed portion 520B has a width direction W that is perpendicular to the LT cross section, i.e., Figure 2 The second main surface side recess 520B may be formed over the entire length of the second main surface side external electrode 412B along the width direction W. The second main surface side recess 520B is disposed approximately near the center of the second main surface side external electrode 412B in the longitudinal direction L.

[0158] Figure 4 The LW cross section of the multilayer ceramic capacitor 1 and the laminate 10 along the length direction L and the width direction W is shown. In this LW cross section, the first side surface external electrode 421A of the first external electrode 40A has a first side surface recessed portion 530A that is recessed toward the laminate 10. The first side surface recessed portion 530A is formed on the surface of the first side surface external electrode 421A. The first side surface recessed portion 530A has a longitudinal direction T perpendicular to the LW cross section, i.e., the longitudinal direction T. Figure 4 The first side surface recess 530A may be formed along the entire length of the first side surface external electrode 421A along the stacking direction T. The first side surface recess 530A is disposed approximately near the center of the first side surface external electrode 421A in the longitudinal direction L. The first side surface recess 530A may communicate with either or both of the first main surface recess 510A and the second main surface recess 520A, or may not communicate with both.

[0159] like Figure 4 As shown, the second side surface external electrode 422A of the first external electrode 40A has a second side surface recessed portion 540A that is recessed toward the stacked body 10 side in the LW cross-section. The second side surface recessed portion 540A is formed on the surface of the second side surface external electrode 422A. The second side surface recessed portion 540A has a stacking direction T that is perpendicular to the LW cross-section, i.e., Figure 4 The second side surface recess 540A may be formed along the entire length of the second side surface external electrode 422A along the stacking direction T. The second side surface recess 540A is disposed approximately near the center of the second side surface external electrode 422A in the longitudinal direction L. The second side surface recess 540A may communicate with either or both of the first main surface recess 510A and the second main surface recess 520A, or may not communicate with both.

[0160] like Figure 4As shown, the first side surface external electrode 421B of the second external electrode 40B has a first side surface concave portion 530B that is recessed toward the stacked body 10 side in the LW cross-section. The first side surface concave portion 530B is formed on the surface of the first side surface external electrode 421B. The first side surface concave portion 530B has a lamination direction T that is perpendicular to the LW cross-section, i.e., Figure 4 The first side surface recess 530B may be formed along the entire length of the first side surface external electrode 421B along the stacking direction T. The first side surface recess 530B is disposed approximately near the center of the first side surface external electrode 421B in the longitudinal direction L. The first side surface recess 530B may communicate with either or both of the first main surface recess 510B and the second main surface recess 520B, or may not communicate with both.

[0161] like Figure 4 As shown, the second side surface external electrode 422B of the second external electrode 40B has a second side surface concave portion 540B that is recessed toward the stacked body 10 side in the LW cross-section. The second side surface concave portion 540B is formed on the surface of the second side surface external electrode 422B. The second side surface concave portion 540B has a lamination direction T that is perpendicular to the LW cross-section, i.e., Figure 4 The second side surface recess 540B may be formed along the entire length of the second side surface external electrode 422B along the stacking direction T. The second side surface recess 540B is disposed approximately near the center of the second side surface external electrode 422B in the longitudinal direction L. The second side surface recess 540B may communicate with either or both of the first main surface recess 510B and the second main surface recess 520B, or may not communicate with both.

[0162] The first main surface-side external electrode 411A and the second main surface-side external electrode 412A of the first external electrode 40A have the same structure as the first main surface-side external electrode 411B and the second main surface-side external electrode 412B of the second external electrode 40B. Furthermore, the first side surface-side external electrode 421A and the second side surface-side external electrode 422A of the first external electrode 40A, and the first side surface-side external electrode 421B and the second side surface-side external electrode 422B of the second external electrode 40B also have the same structure as the four main surface-side external electrodes 411A, 412A, 411B, and 412B described above.

[0163] The first main surface side recessed portion 510A and the second main surface side recessed portion 520A of the first external electrode 40A have the same structure as the first main surface side recessed portion 510B and the second main surface side recessed portion 520B of the second external electrode 40B. Furthermore, the first side surface side recessed portion 530A and the second side surface side recessed portion 540A of the first external electrode 40A and the first side surface side recessed portion 530B and the second side surface side recessed portion 540B of the second external electrode 40B also have the same structure as the four main surface side recessed portions 510A, 520A, 510B, and 520B described above.

[0164] Therefore, as representatives of the main surface side external electrodes and main surface side recesses at these four locations, and the side side external electrodes and side side recesses at these four locations, the first external electrode 40A, the first main surface side external electrode 411A, and the first main surface side recess 510A are described below, thereby serving as an explanation of the main surface side external electrodes and main surface side recesses at the four locations, and the side side external electrodes and side side recesses at the four locations.

[0165] Furthermore, the first principal surface-side external electrode 411A of the first external electrode 40A corresponds to the second principal surface-side external electrode 412A, the first side surface-side external electrode 421A, and the second side surface-side external electrode 422A of the first external electrode 40A, and the first principal surface-side external electrode 411B, the second principal surface-side external electrode 412B, the first side surface-side external electrode 421B, and the second side surface-side external electrode 422B of the second external electrode 40B. The first principal surface-side recess 510A of the first external electrode 40A corresponds to the second principal surface-side recess 520A, the first side surface-side recess 530A, and the second side surface-side recess 540A of the first external electrode 40A, and the first principal surface-side recess 510B, the second principal surface-side recess 520B, the first side surface-side recess 530B, and the second side surface-side recess 540B of the second external electrode 40B.

[0166] The first base electrode layer 50A, the first conductive resin layer 60A, and the first plating layer 70A of the first external electrode 40A correspond to the second base electrode layer 50B, the second conductive resin layer 60B, and the second plating layer 70B of the second external electrode 40B. The first Ni plating layer 71A and the first Sn plating layer 72A of the first plating layer 70A of the first external electrode 40A correspond to the second Ni plating layer 71B and the second Sn plating layer 72B of the second plating layer 70B of the second external electrode 40B.

[0167] Figure 5A as well as Figure 5B Both Figure 2The enlarged view of the portion indicated by V is a LT cross-sectional view showing the first main surface side external electrode 411A of the first external electrode 40A. Figure 5A as well as Figure 5B Shown in Figures 1 to 4 The same XYZ orthogonal coordinate system. In addition, Figure 5A as well as Figure 5B In the figure, hatching is omitted to clarify marks, leader lines, and dimension lines.

[0168] like Figure 5A as well as Figure 5B As shown, the first main surface side external electrode 411A of the first external electrode 40A includes a first main surface side base electrode layer 511A and a first main surface side conductive resin layer 611A arranged on the first main surface TS1, and a first main surface side plated layer 711A including a first Ni plated layer 71A and a first Sn plated layer 72A. The first main surface side recessed portion 510A is formed by three layers, namely, the outermost first Sn plated layer 72A, the first Ni plated layer 71A below the first Sn plated layer 72A, and the first main surface side conductive resin layer 611A below the first Ni plated layer 71A, in the stacking direction T (in the direction of FIG. 1 ). Figure 5A 、 Figure 5B It is formed so as to be recessed toward the stacked body 10 side (corresponding to the Z direction).

[0169] like Figure 5A as well as Figure 5B As shown, the surface of the first principal surface-side external electrode 411A has the aforementioned first principal surface-side recess 510A, as well as a first raised portion 710 and a second raised portion 720. The first raised portion 710 is formed inwardly of the first principal surface-side recess 510A in the longitudinal direction L, i.e., on the central side of the stack 10 in the longitudinal direction L (on the side farther from the first end surface LS1 in the longitudinal direction L). The second raised portion 720 is formed inwardly of the first principal surface-side recess 510A in the longitudinal direction L, i.e., on the outer side of the stack 10 in the longitudinal direction L (on the side closer to the first end surface LS1 in the longitudinal direction L). In other words, the first main surface side external electrode 411A has a first main surface side recess 510A, a first raised portion 710 arranged on the center side in the longitudinal direction L of the stack 10 with the first main surface side recess 510A sandwiched therebetween, and a second raised portion 720 arranged on the end side in the longitudinal direction L of the stack 10.

[0170] Figure 5AThe mark 700 indicates the region of the first principal surface side recess 510A in the longitudinal direction L in the embodiment. The region 700 of the first principal surface side recess 510A in the longitudinal direction L is based on the distance in the longitudinal direction L between the first midpoint 510m1 of the line connecting the deepest portion 510d of the first principal surface side recess 510A and the apex 710p of the first raised portion 710, and the second midpoint 510m2 of the line connecting the deepest portion 510d of the first principal surface side recess 510A and the apex 720p of the second raised portion 720. The deepest portion 510d of the first principal surface side recess 510A is the portion of the first principal surface side recess 510A closest to the first principal surface TS1 of the stacked body 10 in the stacking direction T. The apex 710p of the first raised portion 710 is the portion of the surface of the first raised portion 710 farthest from the first principal surface TS1 of the stacked body 10 in the stacking direction T. The apex 720 p of the second raised portion 720 is a location on the surface of the second raised portion 720 that is farthest from the first main surface TS1 of the stacked body 10 in the stacking direction T.

[0171] The distance in the stacking direction T between the vertex 710p of the first raised portion 710 and the first main surface TS1 of the stacked body 10 is the height 710H of the first raised portion 710. The distance in the stacking direction T between the vertex 720p of the second raised portion 720 and the first main surface TS1 of the stacked body 10 is the height 720H ​​of the second raised portion 720.

[0172] In the embodiment, the height 710H of the first raised portion 710 is preferably greater than the height 720H ​​of the second raised portion 720. Furthermore, the height 710H of the first raised portion 710 and the height 720H ​​of the second raised portion 720 may be the same or different. In different cases, the height 710H of the first raised portion 710 may be greater than the height 720H ​​of the second raised portion 720 as described above, or conversely, the height 710H of the first raised portion 710 may be less than the height 720H ​​of the second raised portion 720.

[0173] In the embodiment, the depth D of the first main surface side recess 510A refers to the shortest distance between a line connecting the apex 710 p of the first raised portion 710 and the apex 720 p of the second raised portion 720 and the deepest portion 510 d.

[0174] In the embodiment, the depth D of the first main surface side recess 510A is preferably 3 μm or more and 10 μm or less.

[0175] In the embodiment, the depth D of the first principal surface side recess 510A is preferably greater than the thickness corresponding to the stacking direction T of the Ni plating layer 71A in the first principal surface side external electrode 411A.

[0176] like Figure 5AAs shown, in the embodiment, the distance L1 in the longitudinal direction L between the apex 710 p of the first raised portion 710 and the apex 720 p of the second raised portion 720 is preferably 100 μm or more and 160 μm or less.

[0177] like Figure 5A As shown, the distance L1 is preferably longer than the distance L2 in the longitudinal direction L between the inner end 411 e of the first principal-surface-side external electrode 411A and the apex 710 p of the first protrusion 710 .

[0178] exist Figure 2 In FIG. 1 , L4 represents the distance in the longitudinal direction L of the end surface side outer layer portion LG (the first end surface side outer layer portion LG1 and the second end surface side outer layer portion LG2 ) of the laminate 10 . Figure 5A : shows the distance in the longitudinal direction L of the first end surface side outer layer portion LG1. In the embodiment, the distance L1 in the longitudinal direction L between the apex 710p of the first raised portion 710 and the apex 720p of the second raised portion 720 is preferably longer than the distance L4 in the longitudinal direction L of the first end surface side outer layer portion LG1 of the stacked body 10.

[0179] The distance L1 is preferably greater than the maximum thickness of the first principal-surface-side external electrode 411A in the stacking direction T. Furthermore, the distance L1 is preferably greater than the maximum thickness of the first principal-surface-side conductive resin layer 611A in the stacking direction T. Furthermore, the distance L1 is preferably greater than the maximum thickness of the first principal-surface-side base electrode layer 511A in the stacking direction T.

[0180] like Figure 5A As shown, the distance L3 in the longitudinal direction L between the inner end 411e of the first principal surface side external electrode 411A and the deepest portion 510d of the first principal surface side recess 510A is preferably longer than the distance L4 in the longitudinal direction L of the end surface side outer layer portion LG of the laminate 10. The distance L3 is preferably 300 μm or more, for example.

[0181] In the embodiment, the depth D of the first principal surface side recess 510A is preferably 5% or more and 15% or less of the maximum thickness of the first principal surface side external electrode 411A in the stacking direction T.

[0182] like Figure 5A As shown, in the embodiment, the distance L5 in the longitudinal direction L between the inner end 560 a of the first principal surface side base electrode layer 511A and the deepest portion 510 d of the first principal surface side recess 510A is preferably 15 μm or more and 25 μm or less.

[0183] like Figure 5AAs shown, in the embodiment, the distance L6 in the longitudinal direction L between the inner end 560 a of the first principal surface side base electrode layer 511A and the apex 710 p of the first raised portion 710 is preferably 40 μm or more and 80 μm or less.

[0184] As described above, the first main surface side recessed portion 510A is formed by recessing the three layers of the outermost first Sn plating layer 72A, the first Ni plating layer 71A below the first Sn plating layer 72A, and the first main surface side conductive resin layer 611A below the first Ni plating layer 71A toward the laminate 10 in the stacking direction T. In other words, the first main surface side base electrode layer 511A does not have a recessed portion that is recessed toward the laminate 10 in the stacking direction T.

[0185] like Figure 5B As shown, in a cross-sectional view taken along the stacking direction T and the longitudinal direction L, the first main surface side conductive resin layer 611A has a conductive resin layer recess 611c that is recessed toward the laminate 10 side at the boundary surface 611k with the first Ni plating layer 71A of the first main surface side plating layer 711A. The conductive resin layer recess 611c corresponds to the first main surface side recess 510A in the longitudinal direction L and is formed at approximately the same position as the first main surface side recess 510A in the longitudinal direction L. The region of the conductive resin layer recess 611c in the longitudinal direction L corresponds to the region of the first main surface side recess 510A in the longitudinal direction L (denoted by Figure 5A 700).

[0186] like Figure 5B As shown, in the LT cross-section, the deepest portion 611d of the conductive resin layer recess 611c is located inward of the inner end 560a of the first principal-surface-side base electrode layer 511A, that is, toward the center of the laminate 10 in the longitudinal direction L. The deepest portion 611d of the conductive resin layer recess 611c is the portion of the conductive resin layer recess 611c that is closest to the first principal surface TS1 of the laminate 10 in the stacking direction T.

[0187] The thickness 611t of the conductive resin layer 611A at the deepest portion 611d of the conductive resin layer recess 611c is preferably 5 μm to 20 μm. The thickness 611t is the distance between the deepest portion 611d in the stacking direction T and the first main surface TS1.

[0188] like Figure 5BAs shown, in a LT cross-sectional view, the first principal surface-side conductive resin layer 611A includes the conductive resin layer recess 611c described above, as well as a first conductive resin layer raised portion 810 and a second conductive resin layer raised portion 820. The first conductive resin layer raised portion 810 is formed inside the conductive resin layer recess 611c in the longitudinal direction L. The second conductive resin layer raised portion 820 is formed outside the conductive resin layer recess 611c in the longitudinal direction L. In other words, the first principal surface-side conductive resin layer 611A includes the conductive resin layer recess 611c, the first conductive resin layer raised portion 810 positioned at the center of the laminate 10 in the longitudinal direction L, sandwiching the conductive resin layer recess 611c, and the second conductive resin layer raised portion 820 positioned at the end of the laminate 10 in the longitudinal direction L.

[0189] The surface of the laminate 10 that is closest to, that is, at the shortest distance from, the apex 810p of the first conductive resin layer raised portion 810 and the apex 820p of the second conductive resin layer raised portion 820 is the first principal surface TS1. The distance in the stacking direction T between the apex 810p of the first conductive resin layer raised portion 810 and the first principal surface TS1 of the laminate 10 is the height 810H of the first conductive resin layer raised portion 810. Furthermore, the distance in the stacking direction T between the apex 820p of the second conductive resin layer raised portion 820 and the first principal surface TS1 of the laminate 10 is the height 820H of the second conductive resin layer raised portion 820.

[0190] In the embodiment, the height 810H of the first conductive resin layer raised portion 810 is preferably greater than the height 820H of the second conductive resin layer raised portion 820. Furthermore, the height 810H of the first conductive resin layer raised portion 810 and the height 820H of the second conductive resin layer raised portion 820 may be the same or different. In either case, the height 810H of the first conductive resin layer raised portion 810 may be greater than the height 820H of the second conductive resin layer raised portion 820, as described above, or, conversely, the height 810H of the first conductive resin layer raised portion 810 may be less than the height 820H of the second conductive resin layer raised portion 820.

[0191] In the embodiment, the height 810H of the first conductive resin layer raised portion 810 is preferably 15 μm to 30 μm inclusive. Meanwhile, the height 820H of the second conductive resin layer raised portion 820 is preferably 5 μm to 20 μm inclusive.

[0192] The multilayer ceramic capacitor 1 of the embodiment is mounted on a substrate. When mounted on a substrate, the external electrodes 40 are sometimes joined to the terminals of the substrate by welding. When the first main surface side external electrode 411A is joined to the substrate by welding, the bending stress generated in the first main surface side external electrode 411A is particularly concentrated on the Figure 5B The inner end 411e of the first principal-surface-side external electrode 411A or the inner end 611e of the first principal-surface-side conductive resin layer 611A shown in FIG. This flexural stress is transmitted to the laminate 10 as tensile stress, potentially causing cracks in the laminate 10. In the multilayer ceramic capacitor 1 of the embodiment, the first principal-surface-side external electrode 411A includes the first principal-surface-side recess 510A, and the first principal-surface-side conductive resin layer 611A includes the conductive resin layer recess 611c. This disperses the flexural stress to the first principal-surface-side recess 510A and the conductive resin layer recess 611c, or to the areas surrounding these recesses. This alleviates the flexural stress and suppresses cracks in the laminate 10. As a result, durability in harsh environments is improved.

[0193] Dimensions such as the thickness of each layer constituting the first principal surface-side external electrode 411A, the depth of the first principal surface-side recess 510A, and the height of each protrusion are measured, for example, by the following method. Specifically, the multilayer ceramic capacitor 1 is ground starting from the first side surface WS1 or the second side surface WS2 to a position approximately half the width direction W. This exposes a cross-section (LT) of the multilayer ceramic capacitor 1 at the exact center of the width direction W. The aforementioned dimensions are then measured using a digital microscope on the exposed LT cross-section.

[0194] Next, a method for manufacturing the multilayer ceramic capacitor 1 according to the embodiment will be described. The method for manufacturing the multilayer ceramic capacitor 1 according to the embodiment is not limited as long as the aforementioned requirements are met. However, a suitable manufacturing method includes the following steps. Details of each step are described below.

[0195] A dielectric sheet for dielectric layer 20 and a conductive paste for internal electrode layer 30 are prepared. The dielectric sheet and the conductive paste for internal electrode contain a binder and a solvent. The binder and solvent may be known binders and solvents.

[0196] Conductive paste for the internal electrode layer 30 is printed in a predetermined pattern on the dielectric sheet by screen printing, gravure printing, etc. Thus, a dielectric sheet having a pattern for the first internal electrode layer 31 and a dielectric sheet having a pattern for the second internal electrode layer 32 are prepared.

[0197] By stacking a predetermined number of dielectric sheets without internal electrode layer patterns, the portion that will become the first main surface outer layer portion 12A on the first main surface TS1 side is formed. By sequentially stacking a dielectric sheet with a pattern printed on the first internal electrode layer 31 and a dielectric sheet with a pattern printed on the second internal electrode layer 32 on top of the dielectric sheet, the portion that will become the inner layer portion 11 is formed. By stacking a predetermined number of dielectric sheets without internal electrode layer patterns on top of the portion that will become the inner layer portion 11, the portion that will become the second main surface outer layer portion 12B on the second main surface TS2 side is formed. In this manner, a laminated sheet is produced.

[0198] The laminated sheets are pressed in the lamination direction by isostatic pressing or the like, thereby producing a laminated block.

[0199] The stacked blocks are cut into predetermined sizes to produce stacked small pieces. Corners and ridges of the stacked small pieces may be rounded by barrel grinding or the like.

[0200] The stacked small pieces are fired to produce the laminate 10. The firing temperature depends on the materials of the dielectric layer 20 and the internal electrode layer 30, but is preferably 900°C or higher and 1400°C or lower.

[0201] A conductive paste, which will become the base electrode layer 50, is applied to both end surfaces of the laminate 10. In the embodiment, the base electrode layer 50 is a sintered layer. For example, a conductive paste containing a glass component and a metal is applied to the laminate 10 by a method such as dipping. Then, a sintering process is performed to form the base electrode layer 50. The sintering process temperature is preferably 700°C or higher and 950°C or lower.

[0202] In the embodiment, the first foundation electrode layer 50A is configured to extend from the first end surface LS1 to a portion of the first main surface TS1 and the second main surface TS2. Furthermore, the second foundation electrode layer 50B is configured to extend from the second end surface LS2 to a portion of the first main surface TS1 and the second main surface TS2. Furthermore, it is preferable to perform the dipping process while also extending the first foundation electrode layer 50A to a portion of the first side surface WS1 and the second side surface WS2. Furthermore, it is preferable to perform the dipping process while also extending the second foundation electrode layer 50B to a portion of the first side surface WS1 and the second side surface WS2.

[0203] Alternatively, the pre-fired laminated pieces and the conductive paste applied to the laminated pieces can be fired simultaneously. In this case, the sintered layer is preferably formed by sintering a conductive paste to which a ceramic material has been added in place of the glass component. In this case, the added ceramic material is preferably the same type as that used in dielectric layer 20. In this case, the conductive paste is applied to the pre-fired laminated pieces, and the laminated pieces and the conductive paste applied to the laminated pieces are sintered simultaneously, thereby forming a laminate 10 having a sintered layer.

[0204] Next, the conductive resin layer 60 is formed. In addition, the conductive resin layer 60 of the embodiment is formed on the surface of the foundation electrode layer 50 and a part of the surface of the laminated body 10 .

[0205] First, a conductive resin paste is prepared in which a conductive filler is dispersed in a thermosetting resin (the base resin) that serves as the resin portion. This conductive resin paste is produced by stirring and mixing the thermosetting resin and the conductive filler. As a result, the conductive filler is uniformly distributed within the conductive resin paste. Here, the thermosetting resin is, for example, epoxy resin. The conductive filler is, for example, Ag metal powder.

[0206] Next, a conductive resin paste is applied to the base electrode layer 50 using a dipping method and heat-treated at a temperature between 200°C and 550°C. This thermally cures the resin portion, forming the conductive resin layer 60. The heat treatment is preferably performed in an N2 atmosphere. Furthermore, to prevent scattering of the resin and oxidation of the various metal components, the oxygen concentration is preferably kept below 100 ppm.

[0207] In the embodiment, the impregnation is performed so that the first conductive resin layer 60A extends from the first end surface LS1 to a portion of the first main surface TS1 and the second main surface TS2. Furthermore, the impregnation is performed so that the second conductive resin layer 60B extends from the second end surface LS2 to a portion of the first main surface TS1 and the second main surface TS2. Furthermore, in this case, the impregnation is preferably performed so that the first conductive resin layer 60A extends to a portion of the first side surface WS1 and the second side surface WS2. Furthermore, the impregnation is preferably performed so that the second conductive resin layer 60B extends to a portion of the first side surface WS1 and the second side surface WS2.

[0208] Then, a plating layer 70 is formed on the surface of the conductive resin layer 60. In the embodiment, a Ni plating layer 71 and a Sn plating layer 72 are formed on the conductive resin layer 60. The Ni plating layer 71 and the Sn plating layer 72 are formed sequentially using electric field plating. As a plating method, for example, barrel plating is preferably used.

[0209] Here, when obtaining the above-mentioned groove-shaped recessed portions in each main surface-side external electrode and each side surface-side external electrode of the external electrode 40 as in the embodiment, for example, the following methods can be mentioned.

[0210] Figures 6A to 6C The steps of forming the base electrode layer 50 and the conductive resin layer 60 in this method are schematically shown. Figure 6A As shown, a base electrode paste 50P to be the base electrode layer 50 is applied to the end portion of the laminate 10 in the longitudinal direction L by dipping, and then a conductive resin paste 60P to be the conductive resin layer 60 is applied by dipping. Figure 6B As shown in FIG. 1 , the stacked body 10 is passed relatively between a pair of rod-shaped clamps 90 arranged facing each other. The passing direction here is Figure 6B The middle is the paper surface direction. Figure 6C As shown, groove-shaped recesses G are formed on both sides of conductive resin paste 60P, i.e., conductive resin layer 60, using the tips of a pair of rod-shaped jigs 90. These recesses G become the aforementioned first principal surface side recesses 510A, second principal surface side recesses 520A, first side surface side recesses 530A, second side surface side recesses 540A, first principal surface side recesses 510B, second principal surface side recesses 520B, first side surface side recesses 530B, and second side surface side recesses 540B. Subsequently, Ni plating layers 71 and Sn plating layers 72 are formed on conductive resin layer 60.

[0211] Alternatively, the recessed portion may be formed by appropriately adjusting the viscosity of the base electrode paste 50P and the conductive resin paste 60P, or by modifying the dipping method.

[0212] Through the above-described manufacturing steps, the multilayer ceramic capacitor 1 can be manufactured.

[0213] The structure of the multilayer ceramic capacitor 1 is not limited to Figures 1 to 4 For example, the multilayer ceramic capacitor 1 may also be Figure 7A 、 Figure 7B as well as Figure 7C As shown, there are multilayer ceramic capacitors with dual, triple, and quadruple structures.

[0214] Figure 7A The multilayer ceramic capacitor 1 shown is a multilayer ceramic capacitor 1 with a dual-structure structure. In addition to the first internal electrode layer 33 and the second internal electrode layer 34, the internal electrode layer 30 also includes a floating internal electrode layer 35 that serves as a floating internal conductor layer and is not extended to either the first end surface LS1 or the second end surface LS2.

[0215] Figure 7BThe illustrated multilayer ceramic capacitor 1 is a multilayer ceramic capacitor 1 having a triple structure including a first floating internal electrode layer 35A and a second floating internal electrode layer 35B as floating internal electrode layers 35 .

[0216] Figure 7C The illustrated multilayer ceramic capacitor 1 has a quadruple structure including a first floating internal electrode layer 35A, a second floating internal electrode layer 35B, and a third floating internal electrode layer 35C as floating internal electrode layers 35 .

[0217] By providing a floating internal electrode layer 35 as the internal electrode layer 30, the multilayer ceramic capacitor 1 has a structure in which the opposing electrode portion is divided into multiple sections. This results in a structure in which multiple capacitor components are formed between the opposing internal electrode layers 30 and these capacitor components are connected in series. Consequently, the voltage applied to each capacitor component is reduced, enabling the multilayer ceramic capacitor 1 to achieve a higher withstand voltage. Furthermore, the multilayer ceramic capacitor 1 of the embodiment can, of course, also have a multi-section structure of four or more sections.

[0218] exist Figure 7A 、 Figure 7B as well as Figure 7C In the multilayer ceramic capacitor 1 having the structure shown, similarly to the above-described embodiment, the first external electrode 40A and the second external electrode 40B each have a main-surface-side external electrode, and each of these main-surface-side external electrodes has a main-surface-side recessed portion. Furthermore, although not shown in the figure, the conductive resin layer constituting each main-surface-side external electrode has a conductive resin layer recessed portion that is recessed toward the laminate at the boundary with the main-surface-side plating layer.

[0219] In addition, Figure 7A 、 Figure 7B as well as Figure 7C In the multilayer ceramic capacitor 1 having the structure shown, similarly to the above-described embodiment, the first external electrode 40A and the second external electrode 40B each have a side surface external electrode, and each of these side surface external electrodes has a side surface recess. Furthermore, although not shown in the figure, the conductive resin layer constituting each side surface external electrode has a conductive resin layer recessed toward the laminate at the boundary surface with the side surface plating layer.

[0220] in particular, Figures 7A to 7C The multilayer ceramic capacitor 1 having a floating internal electrode layer 35 in a 2-layer structure, a 3-layer structure, or a 4-layer structure is effective for use at high voltages. However, at high voltages, it is preferable to apply contraction stress to the multilayer body 10 as a countermeasure against electrostriction. To achieve this, the plating thickness of the external electrodes on the main surface and side surfaces of the multilayer body 10 is increased. However, in this case, Figure 5BThe tensile stress applied to the inner end 411e of the external electrode 40 and the inner end 611e of the conductive resin layer 60A increases, resulting in a problem of deteriorating flexural resistance. However, by providing recesses (first main surface side recesses and second main surface side recesses) in the main surface-side external electrodes and recesses in the conductive resin layer, as in the embodiment, flexural resistance can be improved as described above, and cracks can be suppressed in the laminate 10.

[0221] According to the multilayer ceramic capacitor 1 according to the embodiment described above, the following effects are achieved.

[0222] (1) A multilayer ceramic capacitor 1 according to an embodiment includes: a multilayer body 10 including a plurality of dielectric layers 20 as ceramic layers and a plurality of internal electrode layers 30 as internal conductor layers alternately stacked in a stacking direction T as a height direction, and including a first main surface TS1 and a second main surface TS2 opposing each other in the stacking direction T, a first end surface LS1 and a second end surface LS2 opposing each other in a longitudinal direction L perpendicular to the stacking direction T, and a first side surface WS1 and a second side surface WS2 opposing each other in a width direction W perpendicular to the stacking direction T and the longitudinal direction L; and a pair of external The electrodes 40 are separately arranged at the two end portions of the stack 10 in the longitudinal direction L, the internal electrode layer 30 includes a first internal electrode layer 31 as a first internal conductor layer led to the first end surface LS1, and a second internal electrode layer 32 as a second internal conductor layer led to the second end surface LS2, and the external electrode 40 includes a first main surface side external electrode 411A and a second main surface side external electrode 412A as main surface side external electrodes respectively arranged on the first main surface TS1 and the second main surface TS2, and a first main surface side external electrode 411B and a second main surface side external electrode 412A. The first main surface side external electrode 411A and the second main surface side external electrode 412A, and the first main surface side external electrode 411B and the second main surface side external electrode 412B respectively have the first main surface side base electrode layer 511A and the second main surface side base electrode layer 512A as the main surface side base electrode layer, and the first main surface side base electrode layer 511B and the second main surface side base electrode layer 512B, and the first main surface side conductive resin layer 611A and the second main surface side conductive resin layer formed on the upper layer of these main surface side base electrode layers as the main surface side conductive resin layer. 612A, and the first main surface side conductive resin layer 611B and the second main surface side conductive resin layer 612B, and the first main surface side plating layer (main surface side plating layer) 711A and the first main surface side plating layer 711B arranged on the upper layer than these main surface side conductive resin layers, and the second main surface side plating layer 712A and the second main surface side plating layer 712B, when viewed in a cross-section along the stacking direction T and the length direction L, each main surface side conductive resin layer has a conductive resin layer recess 611c that is recessed toward the side of the stack 10 at the boundary surface 611k with the main surface side plating layer.

[0223] When the multilayer ceramic capacitor 1 of the embodiment is mounted on a substrate by soldering, the flexural stress generated by the first main surface-side external electrode 411A is not concentrated on the inner end 611e of the first main surface-side conductive resin layer 611A, but is dispersed toward the conductive resin layer recess 611 or the periphery of the conductive resin layer recess 611. This has the effect of alleviating the flexural stress and can suppress the occurrence of cracks in the laminate 10.

[0224] (2) In the multilayer ceramic capacitor 1 according to the embodiment, it is preferred that, in a cross-sectional view along the stacking direction T and the longitudinal direction L, the deepest portion 611 d of the conductive resin layer recess 611 c is located closer to the center of the stack 10 in the longitudinal direction L than the inner end 560 a in the longitudinal direction L of the first main surface side base electrode layer 511A.

[0225] This provides a relaxation effect on the flexural stress, and can suppress the occurrence of cracks in the laminate 10 .

[0226] (3) In the multilayer ceramic capacitor 1 according to the embodiment, it is preferred that, in a cross-sectional view along the stacking direction T and the longitudinal direction L, the first main surface side conductive resin layer 611A includes a first conductive resin layer protrusion 810 arranged at the center side in the longitudinal direction L of the stack 10 with the conductive resin layer recess 611c interposed therebetween, and a second conductive resin layer protrusion 820 arranged at the end side in the longitudinal direction L of the stack 10, and the shortest distance from the surface of the stack 10 to the vertex 810p of the first conductive resin layer protrusion 810, that is, the height 810H of the first conductive resin layer protrusion 810, is higher than the shortest distance from the surface of the stack 10 to the vertex 820p of the second conductive resin layer protrusion 820, that is, the height 820H of the second conductive resin layer protrusion 820.

[0227] This provides a relaxation effect on the flexural stress, and can suppress the occurrence of cracks in the laminate 10 .

[0228] The multilayer ceramic capacitor 1 of the embodiment may have a structure in which the first external electrode 40A and the second external electrode 40B each include a side surface external electrode including a conductive resin layer having a conductive resin layer recess similar to the main surface external electrode.

[0229] That is, the multilayer ceramic capacitor 1 according to the embodiment includes:

[0230] A laminate 10 comprising a plurality of dielectric layers 20 serving as ceramic layers and a plurality of internal electrode layers 30 serving as internal conductor layers alternately stacked in a stacking direction T serving as a height direction, and comprising a first main surface TS1 and a second main surface TS2 opposing each other in the stacking direction T, a first end surface LS1 and a second end surface LS2 opposing each other in a length direction L orthogonal to the stacking direction T, and a first side surface WS1 and a second side surface WS2 opposing each other in a width direction W orthogonal to the stacking direction T and the length direction L; and

[0231] A pair of external electrodes 40 are disposed at both ends of the stacked body 10 in the longitudinal direction L, separated from each other.

[0232] The internal electrode layer 30 includes:

[0233] A first internal electrode layer 31 as a first internal conductor layer is led out to the first end surface LS1; and

[0234] The second internal electrode layer 32, which is the second internal conductor layer, is led out to the second end surface LS2.

[0235] The external electrode 40 includes a side surface external electrode disposed on at least one of the first side surface WS1 and the second side surface WS2.

[0236] The side external electrode has:

[0237] a lateral substrate electrode layer;

[0238] a side conductive resin layer disposed above the side base electrode layer; and

[0239] The side plated layer is arranged above the side conductive resin layer.

[0240] In a cross-sectional view along the stacking direction T and the longitudinal direction L, the side surface conductive resin layer has a conductive resin layer recessed portion recessed toward the laminated body at a boundary surface with the side surface plating layer.

[0241] The present invention is not limited to the configuration of the above-described embodiment, and can be applied with appropriate modifications within the scope of the present invention. In addition, a configuration obtained by combining two or more of the desired configurations described in the above-described embodiment also constitutes the present invention.

[0242] For example, the multilayer ceramic capacitor 1 may be a two-terminal multilayer ceramic capacitor having two external electrodes, or may be a multi-terminal multilayer ceramic capacitor having a large number of external electrodes.

[0243] In the above embodiment, a laminated ceramic capacitor using dielectric ceramics is exemplified as a laminated ceramic electronic component. However, the laminated ceramic electronic component disclosed herein is not limited thereto and can be applied to various laminated ceramic electronic components, such as piezoelectric components using piezoelectric ceramics, thermistors using semiconductor ceramics, and inductors using magnetic ceramics. Examples of piezoelectric ceramics include PZT (lead zirconate titanate) ceramics, semiconductor ceramics include spinel ceramics, and magnetic ceramics include ferrites.

Claims

1. A multilayer ceramic electronic component comprising: A laminate comprising a plurality of ceramic layers and a plurality of internal conductor layers alternately stacked in a height direction, and comprising a first main surface and a second main surface opposing each other in the height direction, a first end surface and a second end surface opposing each other in a length direction perpendicular to the height direction, and a first side surface and a second side surface opposing each other in a width direction perpendicular to the height direction and the length direction; and A pair of external electrodes are disposed at both ends of the stack in the longitudinal direction, separated from each other. The inner conductor layer comprises: a first internal conductor layer led out to the first end face; and The second internal conductor layer is led out to the second end face, The external electrodes include a main surface side external electrode arranged on at least one of the first main surface and the second main surface, The main surface side external electrode has: a main surface side base electrode layer; a main surface side conductive resin layer disposed above the main surface side base electrode layer; and The main surface side plating layer is arranged above the main surface side conductive resin layer. The main-surface-side conductive resin layer has a conductive resin layer recessed portion recessed toward the laminated body at a boundary surface with the main-surface-side plating layer in a cross-sectional view along the height direction and the longitudinal direction.

2. The multilayer ceramic electronic component according to claim 1, wherein In a cross-sectional view along the height direction and the longitudinal direction, the deepest portion of the conductive resin layer recess is located closer to the center of the laminate in the longitudinal direction than the inner end of the main-surface-side base electrode layer in the longitudinal direction.

3. The multilayer ceramic electronic component according to claim 1 or 2, wherein In the cross-sectional view along the height direction and the length direction, The main surface side conductive resin layer includes a first conductive resin layer protrusion arranged at the center side in the longitudinal direction of the laminate with the conductive resin layer concave portion sandwiched therebetween, and a second conductive resin layer protrusion arranged at the end side in the longitudinal direction of the laminate. The shortest distance from the surface of the stack to the top of the first conductive resin layer protrusion, i.e., the height of the first conductive resin layer protrusion, is higher than the shortest distance from the surface of the stack to the top of the second conductive resin layer protrusion, i.e., the height of the second conductive resin layer protrusion.

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