L-shaped plasma confinement ring for plasma chamber

Abstract

A plasma confinement ring for a plasma chamber includes a ring-shaped element and a cylindrical element. The ring element surrounds a substrate support assembly in the plasma chamber and is disposed along a plane on which a substrate placed on the substrate support assembly in the plasma chamber is located, the ring element including a plurality of apertures. The cylindrical element of the plasma confinement ring extends from an outer edge of the annular element in a direction perpendicular to the plane on which the substrate placed on the substrate support assembly in the plasma chamber is located. The plasma confinement ring is of a one-piece type.

Description

This application is a divisional application of application No. 201980050977.5, filed on August 5, 2019, and entitled “L-shaped plasma confinement ring for a plasma chamber”. CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. Patent Application No. 16 / 057,226, filed on August 7, 2018. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates generally to plasma chambers for processing semiconductor substrates and, more particularly, to L-shaped plasma confinement rings for use in plasma chambers. Background Art

[0003] The background description provided here is for the purpose of generally presenting the context of the present disclosure. No admission is made, either explicitly or implicitly, that the work of the presently designated inventors is prior art to the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0004] Substrate processing systems are used to process substrates such as semiconductor wafers. Exemplary processes that can be performed on substrates include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, dielectric etching, rapid thermal processing (RTP), ion implantation, physical vapor deposition (PVD), and / or other etching, deposition, or cleaning processes. The substrate can be arranged on a substrate support, such as a pedestal, electrostatic chuck (ESC), etc., in a processing chamber of the substrate processing system. During processing, a gas mixture can be introduced into the processing chamber, and a plasma can be used to initiate and maintain a chemical reaction.

[0005] The processing chamber includes various components, including, but not limited to, a substrate support, a gas distribution device (e.g., a showerhead, which may also correspond to an upper electrode), a plasma confinement ring or shield, and the like. The substrate support may include a ceramic layer configured to support a wafer. For example, the wafer may be clamped to the ceramic layer during processing. The substrate support may include an edge ring disposed around an exterior of the substrate support (e.g., outside and / or adjacent to the periphery). The edge ring may be provided to modify the plasma sheath above the substrate, optimize substrate edge processing performance, protect the substrate support from plasma-induced corrosion, and the like. A plasma confinement shield may be disposed around each of the substrate support and showerhead to confine the plasma to a volume above the substrate. Summary of the Invention

[0006] A plasma confinement ring for a plasma chamber includes an annular element and a cylindrical element. The annular element surrounds a substrate support assembly in the plasma chamber and is disposed along a plane in which a substrate placed on the substrate support assembly in the plasma chamber lies. The annular element includes a plurality of holes. The cylindrical element of the plasma confinement ring extends from an outer edge of the annular element in a direction perpendicular to the plane in which the substrate placed on the substrate support assembly in the plasma chamber lies. The plasma confinement ring is monolithic.

[0007] In other features, the plasma confinement ring further includes a plurality of threaded holes at a distal end of the cylindrical element to receive screws for attaching the cylindrical element to components of the plasma chamber.

[0008] In another feature, the component comprises an electrode (upper electrode) of the plasma chamber.

[0009] In another feature, the annular element, the substrate support assembly, and an electrode (upper electrode) coupled to the distal end of the cylindrical element define a volume in the plasma chamber in which plasma is confined during processing of the substrate in the plasma chamber.

[0010] In another feature, the outer diameters of the cylindrical element and the electrode (the upper electrode) are equal.

[0011] In another feature, the cylindrical element is a cylindrical wall with a thickness of 3-30 mm and a height of 10-100 mm.

[0012] In still other features, a system includes the plasma confinement ring and a first electrode (lower electrode) and a second electrode (upper electrode) of the plasma chamber. The first electrode is positioned within the substrate support assembly. The first electrode is configured to be parallel to the plane of the substrate positioned on the substrate support assembly. The annular element surrounds the first electrode. The second electrode is configured to be spaced a height apart from and parallel to the first electrode. The second electrode extends radially outward along the plane toward the cylindrical element and is connectable to a distal end of the cylindrical element.

[0013] In another feature, the outer diameters of the cylindrical element and the second electrode are equal.

[0014] In another feature, the aperture is a radially extending slot extending from an inner region near an inner edge of the annular element to an outer region near an outer edge of the annular element.

[0015] In another feature, the holes are formed using an abrasive water jet cutting process.

[0016] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0018] Figure 1 shows a partial cross-sectional view of a plasma processing chamber;

[0019] Figure 2A and 2B Shows Figure 1 An example of a C-shaped plasma confinement ring or shield for use in a plasma processing chamber;

[0020] Figure 3A The invention is shown to be used for Figure 1 An L-shaped confinement ring within the plasma processing chamber;

[0021] Figure 3B The invention shows the use of the method according to the present disclosure for Figure 1 A C-shaped shield formed by an L-shaped confinement ring in a plasma processing chamber;

[0022] Figure 4A and 4B Examples of embodiments are shown, which are used according to the present disclosure Figure 1 An L-shaped confinement ring within the plasma processing chamber;

[0023] Figure 5 showing cross-sectional and top views of the L-shaped confinement ring and a method of cutting a slot or hole in the L-shaped confinement ring using an abrasive water jet nozzle according to the present disclosure; and

[0024] Figure 6A and 6B 3 and 3B show further views of the L-shaped confinement ring shown in FIG. 3 and 3B, which is used in accordance with the present disclosure. Figure 5 Made by the method shown.

[0025] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0026] The processing chamber of a substrate processing system may include a plasma confinement ring or shield. The shield can be configured to confine the plasma and other reactants to a desired area within the processing chamber. For example, the shield can be positioned around the substrate support and the upper electrode to confine the plasma to a volume above the substrate and below the upper electrode.

[0027] Typically, a plasma confinement shield is C-shaped and machined from a block of polysilicon. Slits or holes (hereinafter collectively referred to as holes) are fabricated in the lower portion of the C-shaped shield to allow gas to escape from the plasma confinement region within the C-shaped shield. During the fabrication process, extreme care is required to protect the upper portion and vertical sidewalls of the C-shaped shield.

[0028] The present disclosure proposes an L-shaped confinement ring or shield that can be used to replace a C-shaped plasma confinement shield. The L-shaped confinement ring has no upper portion. Therefore, holes can be made in the lower portion of the L-shaped confinement ring using any suitable method and without any protective measures.

[0029] Thus, as described in further detail below, the L-shaped confinement ring provides flexibility in the selection of processes that can be used to form the aperture (e.g., radial slot). Furthermore, the L-shaped confinement ring provides ease of maintenance (i.e., the L-shaped confinement ring can be easily replaced when worn due to use). The flexibility of process selection and ease of maintenance of the L-shaped (relative to the C-shaped) can result in significant cost savings in the time and materials required to manufacture the L-shaped confinement ring and the aperture therein.

[0030] This disclosure is organized as follows. Figure 1 An example of a plasma processing chamber utilizing a C-shaped confinement shield is described. Figure 2A and 2B To further illustrate and describe the C-shaped restraint shield. Figure 3A and 3B To show and illustrate an L-shaped restraint ring according to the present disclosure. Figure 4A and 4B To illustrate Figure 1 An example of an embodiment utilizing an L-shaped confinement ring in a plasma processing chamber. Figure 5 A method for making a hole in an L-shaped confinement ring according to the present disclosure is shown and described. Figure 6A and 6B Examples of different views of an L-shaped restraint ring according to the present disclosure are shown in Throughout this disclosure, the terms shroud and restraint are used synonymously and interchangeably.

[0031] Figure 1A partial cross-sectional view of a plasma processing chamber (plasma chamber) 100 is shown. The plasma chamber 100 can be used to perform etching, deposition, and / or other suitable substrate processing using RF plasma. The plasma chamber 100 includes a substrate support assembly 102, an upper electrode including a central electrode plate (central electrode or inner electrode) 104 and an annular outer electrode (outer electrode) 106, and confinement rings 108. The outer electrode 106 surrounds the outer edge of the inner electrode 104. For simplicity, throughout this disclosure, the inner and outer electrodes shown in all figures are collectively referred to as the upper electrode. For example, the upper electrode of the plasma chamber 100 includes the inner electrode 104 and the outer electrode 106 and are therefore collectively referred to as the upper electrodes 104, 106. During processing, a semiconductor substrate (not shown) is supported on the substrate support assembly 102.

[0032] Confinement ring 108 extends outward from outer electrode 106. Confinement ring 108 includes a horizontal upper section (upper portion) 108a extending inward toward outer electrode 106, a vertical section (side portion) 108b extending downward from the outer end of upper section 108a, and a horizontal lower section (lower portion) 108c extending inward from the lower end of side portion 108b. Lower portion 108c includes a plurality of radially extending slots through which process gases and reaction byproducts are exhausted from plasma chamber 100. Confinement ring 108 may include a slot ring 110 below lower portion 108c. Slot ring 110 may rotate and move vertically relative to lower portion 108c to adjust the flow of process gases and reaction byproducts through the radially extending slots.

[0033] The substrate support assembly 102 includes a movable ground ring 112, a lower electrode 114, and an electrostatic chuck (ESC) 116 on which a semiconductor substrate is electrostatically clamped. The substrate support assembly 102 includes an edge ring 118 surrounding the ESC 116, the edge ring 118 having a surface exposed to the plasma. The substrate support assembly 102 includes a dielectric ring 120 surrounding the edge ring 118, the dielectric ring 120 having a surface exposed to the plasma. The substrate support assembly 102 includes an insulating ring 122 positioned below the edge ring 118. The substrate support assembly 102 includes a stationary ground ring 124 made of a conductive material positioned below the dielectric ring 120. A portion 124a of the stationary ground ring 124 surrounds the insulating ring 122. The movable ground ring 112 is supported on a compressible plunger 126, which is supported on a portion 124b of the stationary ground ring 124. The movable ground ring 112 moves vertically relative to the fixed ground ring 124 to make electrical contact with the confinement ring 108. The substrate support assembly 102 is supported on an electrically grounded bias housing 128.

[0034] In the plasma chamber 100, the confinement ring 108 is C-shaped and is arranged in the form of a shield around the upper electrodes 104, 106 and the substrate support assembly 102 to confine the plasma within the processing volume or plasma region 130. Therefore, the confinement ring 108 is also referred to as a C-shaped confinement ring 108 or a C-shaped shield 108. In some examples, the confinement ring 108 includes a semiconductor material, such as silicon (Si) or polycrystalline silicon. The confinement ring 108 may include one or more holes (e.g., radial slots) configured to allow gas to flow out of the plasma region 130 for exhaust from the plasma chamber 100.

[0035] Figure 2A A cross section of confinement ring 108 is shown. Confinement ring 108 includes an inner surface 108d facing the plasma and an outer surface 108e not facing the plasma. Confinement ring 108 may include one or more apertures 108f (e.g., holes or radial slits) to allow gas to escape from plasma region 130 within confinement ring 108.

[0036] Figure 2B The restraint ring 108 is shown in more detail. The restraint ring 108 is annular. The restraint ring 108 is C-shaped and includes an upper portion 108a, side portions 108b, and a lower portion 108c. The lower portion 108c includes a hole 108f. The upper portion 108a extends to Figure 1 The upper electrodes 104, 106 are shown.

[0037] The C-shape of confinement ring 108 presents various problems. For example, confinement ring 108 is difficult to manufacture. Specifically, because manufacturing confinement ring 108 requires very large crystals, is very expensive, and requires extensive machining of very hard materials, confinement ring 108 is difficult to manufacture from single crystal silicon.

[0038] Furthermore, it is difficult to create holes 108f in lower portion 108c of confinement ring 108 because upper portion 108a of confinement ring 108 needs to be protected from the process of creating holes 108f. Without protection, upper portion 108a of confinement ring 108 (in the area indicated by 108g) may be damaged when hole 108f is created in lower portion 108c.

[0039] The time and expense required to implement protective measures limits the types of processes that can be used to create holes 108f in lower portion 108c of confinement ring 108. The need for protective measures, combined with the constraints on available processes, makes the process of forming holes in confinement ring 108 very complex, time-consuming, and expensive, and therefore less attractive from a manufacturing perspective. Furthermore, confinement ring 108 is difficult to replace after it wears out from use.

[0040] Figure 3AAn L-shaped confinement ring 400 according to the present disclosure is shown. L-shaped confinement ring 400 includes side portions (or cylindrical walls) 400-1 and a lower (annular) portion 400-2. L-shaped confinement ring 400 does not include an upper portion similar to upper portion 108a of C-shaped confinement ring 108.

[0041] L-shaped confinement ring 400 does not have an upper portion similar to upper portion 108a of C-shaped confinement ring 108, which has a number of advantages. For example, less silicon is required to manufacture L-shaped confinement ring 400 than to manufacture C-shaped confinement ring 108. In addition, L-shaped confinement ring 400 allows for the manufacture of multiple holes 402 in lower (annular) portion 400-2 using virtually any process. Furthermore, L-shaped confinement ring 400 is easier to replace than C-shaped confinement ring 108 (as explained below).

[0042] Therefore, L-shaped confinement ring 400 is flexible in manufacturing and easy to maintain because it does not include an upper portion similar to upper portion 108a of C-shaped confinement ring 108. These advantages greatly save time, materials, and costs required for manufacturing and maintenance.

[0043] Figure 3B A C-shaped shield formed using an L-shaped confinement ring 400 and an upper electrode with an extended outer portion is shown in accordance with the present disclosure. The C-shaped shield includes an upper portion (i.e., an enlarged upper electrode including an inner electrode 404 and an outer electrode 406) and an L-shaped lower portion (i.e., the L-shaped confinement ring 400). The combination of the inner electrode 404 and the outer electrode 406 may generally be referred to as an upper electrode or an upper electrode with an outer portion.

[0044] L-shaped confinement ring 400 includes a lower ring (i.e., lower portion 400-2 having a plurality of holes 402) and a cylindrical wall (i.e., side portion 400-1). Lower ring 400-2 and cylindrical wall 400-1 are integrally formed. That is, L-shaped confinement ring 400 is a single piece. Cylindrical wall 400-1 extends vertically or perpendicularly upward from the outer edge of lower ring 400-2. In a plasma chamber (e.g., plasma chamber 100), lower ring 400-2 is arranged along a plane 401, in which a substrate is placed on a substrate support assembly within the plasma chamber.

[0045] At the distal (upper) end of cylindrical wall 400-1, confinement ring 400 includes a hole 408 for connection to an outer electrode 406 extending radially outward from inner electrode 404. Hole 408 may include threads for receiving a screw through a hole 409 in outer electrode 406, with outer electrode 406 being secured to L-shaped confinement ring 400 by the screw.

[0046] Note that L-shaped confinement ring 400 does not include an upper portion similar to upper portion 108a of C-shaped confinement ring 108. Figure 1 extends to the upper electrodes 104, 106. Instead, as Figure 3B shown, the external electrode 406 (similar to Figure 1 element 106) extends from the internal electrode 404 (similar to Figure 1 element 104) to the upper end of the side portion (i.e., the cylindrical wall) 400-1 of the L-shaped constraint ring 400. Thus, the present disclosure proposes using the internal electrode 404, the external electrode 406, and the L-shaped constraint ring 400 to replace Figure 1 the upper electrodes 104, 106 and the C-shaped constraint ring in the plasma chamber 100 of

[0047] Figure 4A and 4B show examples of embodiments using the L-shaped constraint ring in the plasma chamber 100 according to the present disclosure. Note that these figures are not formal mechanical drawings. Instead, these drawings are simplified partial schematic views, which are used to illustrate the use of the L-shaped constraint ring in the plasma chamber 100 of Figure 1 according to the present disclosure. To further simplify the illustration, the partial schematic view only provides a view of the left side of the plasma chamber 100. Although not shown, it should be understood that the structure on the right side of the plasma chamber 100 is similar. Figure 1 In the first embodiment shown in

[0048] In Figure 4A In the first embodiment shown, the horizontal upper portion 108a is separated (i.e., different) from the L-shaped constraint ring 400 and can be attached to the L-shaped constraint ring 400 as shown. In addition, the horizontal upper portion 108a protrudes inwardly towards the external electrode 106, but not as far as the lower horizontal portion of the L-shaped constraint ring 400 (i.e., y < x), and contacts the outer edge of the external electrode 106.

[0049] In Figure 4B In the second embodiment shown, the horizontal upper portion (shown as element 108a + 106) is a single component including both elements, 108a and 106. That is, element 108a is part of the whole of element 106 or is integrated with component 106. The element (108a + 106) can be referred to as the external electrode portion of the upper electrodes 104, 106. The element (i.e., the external electrode) 108a + 106 is separated (i.e., different) from the L-shaped constraint ring 400 and can be attached to the L-shaped constraint ring 400 as shown. In addition, the element 108a + 106 protrudes further inwardly towards the internal electrode 104 than the lower horizontal portion of the L-shaped constraint ring 400 (i.e., z > x), and contacts the outer edge of the internal electrode 104.

[0050] The L-shape of confinement ring 400 provides the following advantages. First, L-shaped confinement ring 400 is less expensive and easier to manufacture than C-shaped confinement ring 108. Specifically, due to its L-shape, L-shaped confinement ring 400 uses less silicon than C-shaped confinement ring 108, thereby reducing the cost of L-shaped confinement ring 400 relative to C-shaped confinement ring 108. Furthermore, due to its L-shape, hole 402 can be cut using a water jet, which is much faster than other processes (e.g., laser cutting).

[0051] Note that because there are no components opposed to the water jet flow (e.g., upper portion 108a of C-shaped containment ring 108), an abrasive water jet cutting process can be used to form hole 402, which would otherwise be damaged as described above. Furthermore, because there are no components opposed to the water jet flow, expensive and time-consuming protective measures are not required when forming hole 108f in C-shaped containment ring 108 when forming hole 402 in L-shaped containment ring 400, as is required when forming hole 108f in C-shaped containment ring 108.

[0052] Secondly, the L-shaped confinement ring 400 is the part of the plasma chamber that wears the most. The L-shaped confinement ring 400 can be replaced without also replacing the upper portion (e.g. Figure 3B The external electrode 406 or Figure 4A and 4B Alternatively, outer electrode 406 (or element 108a or 108a+106) may be removed from L-shaped confinement ring 400 while L-shaped confinement ring 400 is being replaced, and may be reattached to a replacement L-shaped confinement ring 400 and reused in plasma chamber 100.

[0053] L-shaped confinement ring 400 having a plurality of holes 402 for plasma confinement and exhaust can be secured to the upper electrode (i.e., outer electrode 406, which is an extension of inner electrode 404) (or to element 108a or 108a+106) using bolts passing through threaded holes 408. Holes 402 (which may include holes or radial slots) can be formed using a high-speed and high-precision waterjet process, which is much faster than conventional methods using laser or electrical discharge machining.

[0054] L-shaped confinement ring 400 can be manufactured using CNC. Hole 402 can be manufactured using a milling water jet. Due to the L-shape, when making the hole in lower portion 400-2, there is no upper portion (such as upper portion 108a of C-shaped confinement ring 108) that requires protection. When making hole 108f in lower portion 108c, bottom surface 108g of upper portion 108a of C-shaped confinement ring 108 requires protection, while L-shaped confinement ring 400 does not have an upper portion similar to upper portion 108a. Therefore, the L-shaped design eliminates the need for protective measures typically used when using C-shaped confinement ring 108, and the L-shape allows for a simpler, faster, and less expensive process for making orifices.

[0055] High-precision holes 402 can be directly cut, significantly reducing cutting time by more than 83% compared to EDM and more than 75% compared to laser machining. L-shaped confinement ring 400 can be easily attached (and removed from it after wear) to the upper electrode (here, outer electrode 406 or element 108a or 108a+106) using threaded holes 408 and bolts.

[0056] Figure 5 A cross-sectional view 500 and a top view 502 of an L-shaped confinement ring 400 are shown, along with a method by which an abrasive waterjet nozzle can cut a hole 402 from the side with a hub. In the specially designed two-path cutting method shown, the nozzle torque direction in the two straight sections is away from the center of the L-shaped confinement ring 400. Consequently, the jet lag is directed toward the center of the L-shaped confinement ring 400, preventing damage to the L-channel wall from the jet lag. Additionally, the water pressure can be set to a maximum (e.g., 60 ksi) to achieve an optimal surface finish on the hole wall.

[0057] Specifically, the abrasive water jet cutting starts from the guide hole on the lower (annular) portion 400-2 of the L-shaped confinement ring 400 and includes a two-path cutting process. The cutting path sequence of the two-path cutting process is determined by Figure 5 They are numbered 1 to 4 in the .

[0058] Number 1 shows the start of the two-path cutting process starting from the pilot hole, with the cutting path slightly advancing toward the hub inner diameter (ID). Number 2 shows cutting the northern (upper) portion of the semicircle at the hub ID, followed by a straight cut, with the final cut ending at the intersection of the straight portion and the semicircle at the hub outer diameter (OD). Number 3 shows returning to the pilot hole with the water shut off (i.e., no cutting). Number 4 shows cutting the southern (lower) portion of the semicircle at the hub ID, followed by a straight cut, and then cutting the semicircle at the hub OD.

[0059] During the cutting of each hole, the center portion is isolated as the water jet moves around the hole 402. When the cutting of each hole is completed at the second end point of the cutting process (i.e., the end of number 4), the isolated center portion automatically drops into the water tank of the abrasive water jet machine. This simplifies the post-water jetting processing of the hole 402, including CNC machining and cleaning of the hole 402, thereby increasing production.

[0060] Figure 6A and 6B Shows the use Figure 5 Additional views of L-shaped confinement ring 400 manufactured by the illustrated method. These views show that L-shaped confinement ring 400 is an annular structure or component.

[0061] Essentially, the L-shaped confinement ring 400 is a structure that can be used to confine plasma in the plasma region 130 between the substrate support assembly and the upper electrode in the plasma chamber 100. In other words, the L-shaped confinement ring 400, the substrate support assembly, and the upper electrode define the plasma region 130 in the plasma chamber 100.

[0062] The structure (i.e., L-shaped confinement ring 400) includes an annular element (i.e., element 400-2) containing a plurality of holes (i.e., element 402) and a cylindrical element (i.e., element 400-1) extending vertically upward from the annular element. The annular element 400-2 surrounds the substrate support assembly (e.g., Figure 1 102). Ring element 400-2 is positioned along the same plane as the substrate positioned on the substrate support assembly. Cylindrical element 400-1 extends from the outer edge of ring element 400-2 in a direction perpendicular to the plane of the substrate positioned on the substrate support assembly. This structure (i.e., L-shaped confinement ring 400) is integrally formed from a polycrystalline material (e.g., silicon). In other words, the structure is a single piece.

[0063] The distal (upper) end of cylindrical element 400-1 includes a plurality of threaded holes 408 for receiving screws through which the outer portion of the upper electrode (e.g., outer electrode 406 extending radially outward from the plane along inner electrode 404, or the outer portion of element 108a or elements 108a+106) is screwed onto cylindrical element 400-1. The outer diameters of cylindrical element 400-1 and outer electrode 406 are equal. Cylindrical element 400-1 is, for example, a cylindrical wall having a thickness of 3-30 mm and a height of 10-100 mm.

[0064] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent when studying the drawings, description and appended claims. It should be understood that one or more steps in the method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the embodiments described are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0065] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0066] In some implementations, the controller is part of a system that can be part of the examples above. Such a system can include semiconductor processing equipment that includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller" that can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0067] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various separate settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or the die of the wafer.

[0068] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, review trends or performance metrics for multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., process and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0069] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0070] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport of wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. An L-shaped plasma confinement ring for a plasma chamber, comprising: an annular element forming a horizontal portion of the L-shaped plasma confinement ring, surrounding a substrate support assembly in the plasma chamber, arranged along a plane where a substrate placed on the substrate support assembly in the plasma chamber lies, and comprising a plurality of holes; as well as a cylindrical member forming a vertical portion of the L-shaped plasma confinement ring, extending from an outer edge of the annular member in a direction perpendicular to the plane in which the substrate is placed on the substrate support assembly and not extending below the annular member; wherein the cylindrical element extends uniformly to an upper end that does not extend in any direction parallel to the plane and is attachable to an upper electrode; and The upper electrode extends radially outward along the plane toward the cylindrical element in the plasma chamber.

2. The L-shaped plasma confinement ring of claim 1 , further comprising a plurality of vertical holes located at the upper end of the cylindrical element, wherein the vertical holes are threaded to receive screws, and the cylindrical element can be attached to the upper electrode of the plasma chamber by the screws.

3. The L-shaped plasma confinement ring of claim 1 , wherein the annular element, the substrate support assembly, and the upper electrode define a volume within the plasma chamber in which plasma is confined during processing of the substrate within the plasma chamber.

4. The L-shaped plasma confinement ring of claim 1, wherein outer diameters of the cylindrical element and the upper electrode are equal.

5. The L-shaped plasma confinement ring of claim 1, wherein the cylindrical element is a cylindrical wall having a thickness of 3-30 mm and a height of 10-100 mm.

6. A substrate processing system comprising: The L-shaped plasma confinement ring according to claim 1; a lower electrode disposed in the substrate support assembly, the lower electrode being arranged parallel to the plane of the substrate placed on the substrate support assembly, wherein the annular element surrounds the lower electrode; as well as An upper electrode, which is arranged at a height apart from and parallel to the lower electrode, extends radially outwardly along the plane toward the cylindrical element and is attachable to the upper end of the cylindrical element.

7. The L-shaped plasma confinement ring of claim 1, wherein the holes are radially extending slots.

8. The L-shaped plasma confinement ring of claim 1, wherein the holes are formed using an abrasive water jet cutting process.

9. The L-shaped plasma confinement ring of claim 1, wherein the L-shaped plasma confinement ring is a single piece.

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