Plasma etching device and low-cost high-efficiency frequency modulation method

Abstract

The invention provides a plasma etching device and a low-cost high-efficiency frequency modulation method, and belongs to the technical field of semiconductor manufacturing. The plasma etching device comprises a cylindrical barrel body and a base arranged at the bottom of the barrel body, a coil is arranged on the inner wall of the can body, a motor is fixed to the inner wall of the top of the can body, a motor output shaft is connected with one end of a driving rod, and the other end of the driving rod is connected with a moving mechanism arranged on the coil. According to the invention, the moving mechanism on the coil can be quickly moved by directly controlling the motor in the plasma etching device, so that the reflection power is quickly adjusted to a predetermined target. By adopting the scheme provided by the invention, low-cost and high-efficiency frequency modulation can be realized by using the fixed-frequency power supply, so that the adjustment efficiency can be improved, and the production and manufacturing cost can be reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a plasma etching device and a low-cost and high-efficiency frequency modulation method. Background Art

[0002] Pre-etch (pre-clean, PC) is a type of plasma etching (PE). Radio frequency inductively coupled gas discharge, or inductive discharge for short, is one of the important ways to generate plasma. In an inductively coupled system, power is applied directly to a coil outside the vacuum chamber. The electromagnetic field energy generated by this coil is concentrated within the vacuum chamber, exciting the gas discharge and forming a plasma. Compared with capacitively coupled plasma, it has advantages such as high plasma density and minimal damage to the processed substrate. Compared with other high-density plasma sources such as electron cyclotron resonance, it has the advantages of simple principle, low equipment cost, and easy adjustment and control.

[0003] One type of substance in plasma that performs the etching function is various ions. Ions are primarily generated through electron collisions. Electrons are the dominant particles in plasma, and they derive their energy from the gas discharge power. In commonly used low-temperature plasmas, electron energy and its equivalent temperature are much higher than those of gas atoms and other particles. Electrons induce a variety of physical and chemical processes by colliding with gas atoms. Electron collision ionization and electron collision dissociation are the main processes in plasma etching, and they determine the ion concentration. The typical collision ionization reaction equation between electrons and certain etching gas atoms or molecules is as follows:

[0004] e - +Ar→Ar + +2e -

[0005] To etch the wafer, a negative bias potential is usually applied to attract ions from the plasma. + The ions are accelerated to the wafer surface and bombard the wafer surface material (removing native oxide or fluorocarbon residues after etching from the wafer surface).

[0006] There are many different structures of inductively coupled plasma systems depending on the application:

[0007] In capacitive discharge systems, an all-metal vacuum chamber (magnetron sputtering) is usually used. RF power is coupled to the plasma through electrodes located within the vacuum chamber.

[0008] Inductive discharge is different. In a non-resonant inductive discharge system, the RF power supply is applied to a non-resonant spiral coil. ICP (inductively coupled plasma) RF frequencies are often selected as 400kHz, 2MHz or 13.56MHz. Although the inductive coil is also placed in the vacuum chamber, many systems often place the coupling coil outside the vacuum chamber to avoid contamination by metal impurities, such as Figure 1 shown. Figure 1 The schematic diagram shows the principle structure of a typical ICP device, in which the spiral inductor 1 is cylindrical and connected to an RF power supply. The RF power applied to the inductor needs to be coupled to the plasma through a dielectric window. Therefore, the cavity wall 3 in the RF input area must be made of dielectric material. The cavity walls in other areas are metal and grounded, forming a good contact with the plasma over a large area. The bottom of the wafer base 2 is connected to a 13.56MHz bias voltage RF power supply 4, which applies 13.56MHz RF energy to the wafer base to induce the bias, Ar + It accelerates toward the negatively biased pedestal and etches the wafer to remove surface material.

[0009] In the prior art, taking the ICP RF frequency as an example, a low-frequency 400kHz is selected, and the low-frequency power supply is connected to the inductor coil. When the power is turned on, there is often a large reflected power or even unstable output power. In order to solve this problem, it is generally required to use an adjustable frequency power supply, that is, the frequency can be automatically adjusted or manually adjusted within a certain frequency range, so that the power supply output frequency can match the cavity and output stably. Compared with a fixed-frequency power supply, an adjustable frequency power supply is significantly more expensive, which undoubtedly significantly increases the cost of using the power supply. In addition, the electrode connection position near the power supply end inside the inductor coil device needs to be adjusted to minimize the reflected power. This inductance adjustment method requires the entire inductor coil device to be disassembled, and then the electrode connection position inside the ICP inductor coil device must be manually adjusted. This is not only complicated to operate, but also has low adjustment efficiency. Summary of the Invention

[0010] In order to solve the above problems, the present invention provides a plasma etching device and a low-cost and high-efficiency frequency modulation method based on the device.

[0011] To achieve the above object, the technical solution of the present invention is as follows:

[0012] A low-cost and high-efficiency frequency modulation method for a plasma etching device comprises the following steps:

[0013] Step 1: Install a plasma etching device in a magnetron sputtering reaction chamber, set the moving mechanism of the plasma etching device on the coil, extend the lever in the driving rod into the moving mechanism, and connect the other end of the driving rod to the motor shaft;

[0014] Step 2: Connect the base of the plasma etching device to a high-frequency power supply, and connect the coil to a low-frequency fixed-frequency power supply through a moving mechanism;

[0015] Step 3: The drive motor works, and the motor drives the drive rod to rotate. The lever at one end of the drive rod pushes the shift block to move. The shift block pushes open the upper and lower clamping blocks of the moving mechanism, and the clamping groove releases the coil. The drive rod drives the moving mechanism to move on the coil until the reflected power adjustment target is reached;

[0016] Step 4: After the moving mechanism moves to the specified position and reaches the reflected power adjustment target, the motor stops working, the moving mechanism stops moving, the shift block returns to its position under the action of the second spring, the first spring contracts, the upper clamping block and the lower clamping block fit together, the clamping groove is clamped on the coil, and the coil below the moving mechanism is connected to the circuit.

[0017] Furthermore, in step three, the driving rod can drive the moving mechanism to move forward or reverse on the coil.

[0018] Furthermore, in step 3, the driving rod drives the moving mechanism to move on the coil until the reflected power adjustment target is reached by any of the following two methods:

[0019] 1. The driving rod drives the moving mechanism to move a certain distance on the coil and then stop to obtain the reflected power value, which is compared with the adjustment target. If the adjustment target is not reached, the mechanism continues to move for a certain distance and then stops again, and the reflected power value is compared with the adjustment target. This process is repeated until the reflected power reaches the adjustment target and stops.

[0020] 2. A conductive component is installed in the clamping groove. During the movement of the moving mechanism, the conductive component can maintain contact with the coil. The driving rod drives the moving mechanism to move on the coil, and the reflected power is collected in real time. When the reflected power reaches the adjustment target, the motor stops working.

[0021] Furthermore, before step three drives the motor to work, the motor working state is first set according to the reflected power adjustment target and the change of reflected power under different working states of the motor. The change of reflected power under different working states of the motor is collected in the following way: control the motor to rotate forward or reverse, and collect data to obtain the change of reflected power under different working states of the motor.

[0022] Furthermore, the change of the reflected power under different working states of the motor is: the relationship between the motor rotation direction and the change of the reflected power.

[0023] A plasma etching device, used to implement a low-cost and high-efficiency frequency modulation method for a plasma etching device, comprising: a cylindrical barrel and a base arranged at the bottom of the barrel; a coil is arranged on the inner wall of the barrel, a motor is fixed to the inner wall of the top of the barrel, the motor output shaft is connected to one end of a drive rod, and the other end of the drive rod is connected to a moving mechanism, the moving mechanism is arranged on the coil; the moving mechanism includes a clamping groove, an upper clamping block, a lower clamping block, a first shifting block, a first spring, a second spring, a second shifting block, and a third spring; the first spring is connected between the upper clamping block and the lower clamping block The clamping groove is provided at one side end of the upper and lower clamping blocks for the coil to pass through; a cavity is provided between the upper and lower clamping blocks, the first shift block, the second spring, the second shift block, and the third spring are provided in the cavity, one end of the second spring is fixed to one of the clamping blocks, and the other end is connected to the middle part of the first shift block, one end of the third spring is fixed to one of the clamping blocks, and the other end is connected to the second shift block; the first shift block, the second spring and the second shift block and the third spring are respectively provided at two ends of the cavity; the shift rod at one end of the driving rod extends into the cavity and can contact the shift block during movement.

[0024] Furthermore, a groove for the two shifting blocks to move is provided in the upper clamping block or the lower clamping block, and one end of the two shifting blocks extends into the groove and the other end abuts against the other clamping block.

[0025] Furthermore, the base is used to connect to a high-frequency power supply, and the coil is used to connect to a low-frequency power supply.

[0026] The beneficial effects of the present invention are:

[0027] The solution provided by the present invention enables low-cost, high-efficiency frequency modulation using a fixed-frequency power supply. By directly controlling the motor in the plasma etching device, the moving mechanism on the coil can be quickly moved, thereby quickly adjusting the reflected power to a predetermined target (e.g., 0 W). Therefore, the plasma etching device and corresponding low-cost, high-efficiency frequency modulation method provided by the present invention can improve regulation efficiency and reduce manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is the principle structure of a typical ICP device;

[0029] Figure 2 The Pre-etch plasma etching device of the present invention;

[0030] Figure 3 A schematic cross-section diagram of a plasma etching device;

[0031] Figure 4 This is a cross-sectional diagram of the moving mechanism, in which the upper and lower clamps are in a closed state;

[0032] Figure 5It is a cutaway perspective diagram of part of the moving mechanism;

[0033] Figure 6 Schematic diagram of the plasma etching device connected to the ICP system circuit.

[0034] Description of reference numerals:

[0035] 1-coil, 2-base, 3-cavity wall, 4-RF power supply, 5-low frequency power supply, 6-high frequency power supply, 7-barrel, 8-moving mechanism, 9-driving rod, 10-motor, 11-clamping groove, 12-upper clamping block, 13-lower clamping block, 14-shifting block, 15-first spring, 16-second spring, 17-shifting rod, 18-groove, 19-inductively coupled plasma, 20-sealing cover, 21-second shifting block, 22-third spring. DETAILED DESCRIPTION

[0036] The technical solutions provided by the present invention will be described in detail below with reference to specific embodiments. It should be understood that the following specific embodiments are only used to illustrate the present invention and are not used to limit the scope of the present invention.

[0037] like Figure 2 As shown, the Pre-etch plasma etching device of the present invention is composed of an upper inductor coil 1 powered by a 400kHz radio frequency power supply and a cathode powered by a 13.56MHz radio frequency power supply. Figure 2 In the example, base 2 is connected to a 13.56MHz high frequency power supply, and coil 1 is connected to a 400kHz low frequency power supply. Figure 3 As shown, the coil 1 is a spiral metal ring, which is arranged inside the cylindrical ceramic barrel 7. A moving mechanism 8 is provided on the coil, and the moving mechanism 8 is connected to the motor 10 through a driving rod 9. The motor is arranged on the top of the barrel, and the driving rod 9 is connected to the output shaft of the motor 10. The driving rod 9 is L-shaped and can drive the moving mechanism to move on the coil. The moving mechanism 8 is made of conductive material, and the coil is connected to the radio frequency power supply through the moving mechanism. It should be noted that a sealing cover 20 ( Figure 2 Not shown), such as Figure 3 As shown, the sealing cover 20 is made of quartz, and the inside thereof is a vacuum environment for magnetron sputtering reaction, and the sealing cover 20 contains an inductively coupled plasma 19 .

[0038] Specifically, if Figure 4 、 Figure 5As shown, the movable mechanism 8 is a clamping member composed of two parts, upper and lower, specifically including a clamping groove 11, an upper clamping block 12, a lower clamping block 13, a first shifting block 14, a first spring 15, a second spring 16, a second shifting block 21, and a third spring 22. The first spring 15 is connected between the upper clamping block 12 and the lower clamping block 13 and maintains tension in the absence of external forces. Two first springs 15 are provided, one at each end between the upper clamping block 12 and the lower clamping block 13, providing good connection stability. The clamping groove 11 is provided at one end of the upper and lower clamping blocks for the coil to pass through. When the upper and lower clamping blocks are in close contact, the clamping groove 11 clamps the coil. When the upper and lower clamping blocks are separated, the space in the clamping groove 11 increases, allowing the clamping groove 11 to be released from the coil. A cavity is provided between the upper and lower clamping blocks to accommodate the first shifting block 14, the second spring 16, the second shifting block 21, and the third spring 22. One end of the second spring 16 is fixed to the lower clamp 11 (or, if desired, to the lower clamp), and the other end is connected to the middle of the first shift block 14. The first shift block 14 and the second spring 16 are positioned at one end of the cavity between the upper and lower clamps. The second shift block 21 and the third spring 22 are symmetrically positioned with the first shift block 14 and the second spring 16 and are positioned at the other end of the cavity between the upper and lower clamps. Similarly, one end of the third spring 22 is fixed to the lower clamp 11 (or, if desired, to the lower clamp), and the other end is connected to the middle of the second shift block 21. The distal end of the drive rod 9 is connected to a shift lever 17, which extends into the cavity between the upper and lower clamps and can contact either the first shift block 14 or the second shift block 21 during movement in different directions. A groove 18 is provided in the upper clamp for the shift blocks to move. One end of each shift block extends into the groove of the upper clamp 12, while the other end rests against the lower clamp 12. Under normal conditions, the lever 17 is located in the middle of the cavity between the upper and lower clamps. At this time, the upper and lower clamps are closed, and the moving mechanism 8 is clamped on the coil. When the moving mechanism needs to be moved to the corresponding position of the coil, the motor drives the lever 17 to move to one end or the other end of the cavity, driving one of the lever blocks to push open the upper and lower clamps, so that the moving mechanism releases the coil. Under the continuous rotation of the motor, the moving mechanism moves along the coil to the appropriate position. Specifically, taking the pushing of the first lever block 14 as an example, when the motor rotates forward, the drive rod rotates accordingly. At this time, the lever 17 at the end of the drive rod 9 in the figure pushes the first lever block 14 to the right, as shown in FIG. Figure 5As shown, the first shift block 14 pushes the upper clamp open, separating the upper clamp 12 from the lower clamp 13. At this time, the second spring is stretched as the shift block 14 moves, and the first spring 16 is stretched as the upper and lower clamps open. When the moving mechanism 8 moves to the appropriate position along the coil, the motor rotates slightly in the opposite direction, causing the shift rod 17 to move a short distance to the left, away from the first shift block 14, and back to the middle of the cavity. The second spring 16 contracts, the first shift block 14 returns to its original state, and the first spring 15 contracts, bringing the upper and lower clamps into contact. Obviously, when the moving mechanism 8 needs to move in the opposite direction along the coil, it only needs to rotate the motor in the opposite direction. The shift rod 17 at the end of the drive rod 9 moves to the left and pushes the second shift block 21. The second shift block 21 pushes the upper clamp open, separating the upper and lower clamps 12 from the lower clamp 13. At this time, the third spring 22 is stretched as the second shift block 21 moves, and the first spring 16 is stretched as the upper and lower clamps open. When the moving mechanism 8 moves along the coil to the appropriate position, the motor rotates slightly forward, causing the lever 17 to move a short distance to the right, away from the second shift block 21 and back to the center of the cavity. The third spring 22 contracts, causing the second shift block 21 to return to its original position. The first spring 15 contracts, bringing the upper and lower clamping blocks into contact. The aforementioned motor rotation direction, drive rod movement direction, and the positions of the second shift block 21 and third spring 22, as well as the first shift block 14 and second spring 16, are examples and can be adjusted as needed in practice. Shallow grooves matching the shape of the shift bars can be provided on the sides of the first and second shift blocks facing the shift bars. When the shift bar abuts the shift block, it enters the shallow grooves, maintaining a relatively stable relative position. The forward groove prevents the lever from obstructing its movement when it leaves the shift block. In this example, forward motor rotation drives the first shift block, while reverse motor rotation drives the second shift block. In practice, the reverse configuration can be used as needed.

[0039] Connect the plasma etching device to the ICP system, such as Figure 6 As shown. Due to the addition of a plasma etching device (C2 in the figure), the entire RF network has been transformed from a fixed network to a variable network. By controlling the motor, the position of the moving mechanism on the coil can be adjusted, which provides convenience for debugging the reflected power. The upgraded matching network no longer relies on the frequency sweep function of the RF power supply, which is of great help in the selection and cost control of the RF power supply. Figure 6 In the 2017 IEEE Conference on Radio Frequency Matching (CFM) 2017, a fixed matcher was upgraded to a semi-automatic matcher by adding a plasma etching device. The upgraded version can adjust the impedance of the entire RF network by changing the capacitance of the plasma etching device, achieving impedance matching of the entire network at a frequency of 400K.

[0040] Based on the above plasma etching device, the present invention provides a low-cost and high-efficiency frequency modulation method, comprising the following steps:

[0041] Step 1: Install the plasma etching device, place the moving mechanism 8 in the plasma etching device on the coil 1, extend the lever 17 in the driving rod 9 into the moving mechanism 8, and connect the other end of the driving rod 9 to the shaft of the motor 10;

[0042] In step 2, the wafer pedestal 2 in the plasma etching apparatus is connected to a 13.56 MHz RF power source, and the coil is connected to a 400 kHz RF power source. In the pre-etch chamber, a bias voltage is induced by applying 13.56 MHz RF energy to the wafer pedestal. The effective DC bias voltage formed on the wafer is proportional to the RF energy applied to the wafer pedestal and inversely proportional to the RF power applied to the upper coil. The oxide etch rate depends on the bias power and the upper coil power.

[0043] Step 3, control the motor to rotate forward or reverse multiple times and then stop (before stopping, the motor should rotate a short distance in the opposite direction, so that the shift rod moves in the opposite direction, no force is applied to the shift block, and the shift block returns to its original state), move the moving mechanism to a certain position on the coil and clamp it on the coil, connect the moving mechanism to the coil, and collect data to obtain the changes in the reflected power of the motor 10 under different working conditions.

[0044] More specifically, the motor is controlled to rotate forward and the motor's operating time, speed, and reflected power value data are collected; the motor is controlled to rotate reversely and the motor's operating time, speed, and reflected power value data are collected. Based on the above recorded values, the relationship between the motor's rotation direction (i.e., the rotation direction of the moving mechanism on the coil) and the change in reflected power is obtained. For example, the reflected power increases with forward rotation and decreases with reverse rotation, and the amount of change in reflected power corresponding to the rotation distance is determined. Based on these, combined with the adjustment target, the working status of subsequent clicks can be set, including the motor's rotation direction, speed, and operating time.

[0045] In step 4, based on the reflected power adjustment target and the changes in reflected power under different operating states of motor 10 obtained in step 3, the motor operating state is set and motor 10 is driven. Motor 10 rotates drive rod 9, and lever 17 at one end of drive rod 9 pushes shift block 14 to move. Shift block 14 disengages upper clamping block 12, and clamping slot 11 releases coil 1. Drive rod 9 then drives moving mechanism 8 on coil 1 until the reflected power adjustment target is reached. When the adjustment target is to increase reflected power, the motor is set to rotate forward, based on the example of the relationship between motor rotation direction and reflected power changes in step 3. When the adjustment target is to decrease reflected power, the motor is set to rotate reversely. In this example, the reflected power is adjusted to or near 0 W. The reflected power can be obtained in real time.

[0046] There are two main ways to determine whether the reflected power adjustment target has been achieved:

[0047] 1. When the driving rod 9 drives the moving mechanism 8 to move on the coil 1, the clamping groove 11 releases the coil 1, and the moving mechanism 8 moves a certain distance and then stops. The clamping groove 11 clamps the coil 1, obtains the reflected power value, and compares it with the adjustment target. If the adjustment target is not reached, it continues to move for a distance and then stops, and compares the reflected power value with the adjustment target... Continue moving, stopping, and comparing until the adjustment target is reached and stops moving.

[0048] 2. A conductive component (which can be made of soft metal) is installed in the clamping groove 11, which can contact the coil and generate very little friction. During the movement of the moving mechanism 8, the conductive component can still maintain contact with the coil, so that the reflected power can be obtained in real time during the movement. The reflected power can be collected in real time using a processor with a preset adjustment target. The processor can control the start and stop of the motor, and stop the motor when the adjustment target is reached.

[0049] The above two methods can also be used to obtain the relationship between the motor rotation direction and the reflected power change.

[0050] Step 5: After the moving mechanism 8 moves to the specified position, the motor 10 runs in the opposite direction for a short period of time to move the shift rod 17 to the middle of the cavity between the upper and lower clamps and stop working. The moving mechanism 8 stops moving, and the shift block 14 returns to its original position under the action of the second spring 16. The first spring 15 contracts, the upper clamp 12 and the lower clamp 13 fit together, and the clamping groove 11 is clamped on the coil 1. Since the coil is connected to the RF power supply through the moving mechanism, the part of the coil below the moving mechanism is connected to the circuit, and the position of the moving mechanism determines the amount of coil connected. By adjusting the moving structure, the amount of inductance coil connected can be changed, thereby changing the inductive reactance of the inductance coil (that is, changing the obstruction of the RF current), and finally changing the reflected power / effective power of the RF electrode connected to the cavity.

[0051] It should be noted that the above content merely illustrates the technical idea of ​​the present invention and cannot be used to limit the scope of protection of the present invention. For ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications all fall within the scope of protection of the claims of the present invention.

Claims

1. A low-cost and high-efficiency frequency modulation method for a plasma etching device, characterized in that: The steps include: Step 1: Install a plasma etching device in a magnetron sputtering reaction chamber, set a moving mechanism (8) in the plasma etching device on the coil (1), extend a lever (17) in a driving rod (9) into the moving mechanism (8), and connect the other end of the driving rod (9) to the rotating shaft of the motor (10); Step 2: Connect the base of the plasma etching device to a high-frequency power supply, and connect the coil to a low-frequency fixed-frequency power supply through a moving mechanism; Step 3: The drive motor works, and the motor drives the drive rod to rotate. The lever at one end of the drive rod pushes the shift block to move. The shift block pushes open the upper and lower clamping blocks of the moving mechanism, and the clamping groove releases the coil. The drive rod drives the moving mechanism to move on the coil until the reflected power adjustment target is reached; Step 4: After the moving mechanism moves to the specified position and reaches the reflected power adjustment target, the motor stops working, the moving mechanism stops moving, the shift block returns to its position under the action of the second spring, the first spring contracts, the upper clamping block and the lower clamping block fit together, the clamping groove is clamped on the coil, and the coil below the moving mechanism is connected to the circuit.

2. The low-cost and high-efficiency frequency modulation method for a plasma etching device according to claim 1, characterized in that: In the step three, the driving rod can drive the moving mechanism to move forward or reverse on the coil.

3. The low-cost and high-efficiency frequency modulation method for a plasma etching device according to claim 1, characterized in that: In step 3, the driving rod drives the moving mechanism to move on the coil until the reflected power adjustment target is reached, which is achieved by either of the following two methods: (1) The driving rod drives the moving mechanism to move a certain distance on the coil and then stops, obtains the reflected power value, and compares it with the adjustment target. If it fails to reach the adjustment target, it continues to move a certain distance and then stops, and compares the reflected power value with the adjustment target. This process is repeated until the reflected power reaches the adjustment target and stops moving. (2) A conductive component is installed in the clamping groove. During the movement of the moving mechanism, the conductive component can maintain contact with the coil. The driving rod drives the moving mechanism to move on the coil, and the reflected power is collected in real time. When the reflected power reaches the adjustment target, the motor stops working.

4. The low-cost and high-efficiency frequency modulation method for a plasma etching device according to claim 1, characterized in that: Before the step three drives the motor to work, the motor working state is first set according to the reflected power adjustment target and the change of the reflected power under different working states of the motor. The change of the reflected power under different working states of the motor is collected by the following method: controlling the motor to rotate forward or reverse, and collecting data to obtain the change of the reflected power under different working states of the motor.

5. The low-cost and high-efficiency frequency modulation method for a plasma etching device according to claim 4, characterized in that: The change of the reflected power under different working states of the motor is: the relationship between the motor rotation direction and the change of the reflected power.

6. A plasma etching device, characterized in that: A low-cost and high-efficiency frequency modulation method for a plasma etching device for realizing any one of claims 1 to 5, comprising: a cylindrical barrel (7) and a base (2) arranged at the bottom of the barrel (7); a coil (1) is arranged on the inner wall of the barrel (7), a motor (10) is fixed to the inner wall of the top of the barrel (7), an output shaft of the motor (10) is connected to one end of a driving rod (9), and the other end of the driving rod (9) is connected to a moving mechanism (8), and the moving mechanism (8) is arranged on the coil (1); the moving mechanism (8) comprises a clamping groove (11), an upper clamping block (12), a lower clamping block (13), a first shifting block (14), a first spring (15), a second spring (16), a second shifting block (21), and a third spring (22); the first spring (15) is connected to the first spring (11), a second spring (16), a second shifting block (21), and a third spring (22). The invention relates to a method for manufacturing a plurality of springs for driving a motor, wherein the plurality of springs are connected to each other, and the plurality of springs are connected to each other. The plurality of springs are connected to each other, and the plurality of springs are connected to each other. The plurality of springs are connected to each other, and the plurality of springs are connected to each other. The plurality of springs are connected to each other, and the plurality of springs are connected to each other. The plurality of springs are connected to each other, and the plurality of springs are connected to each other.

7. The plasma etching device according to claim 6, characterized in that: A groove (18) for the two shifting blocks to move is provided in the upper clamping block (12) or the lower clamping block (13), and one end of each of the two shifting blocks extends into the groove (18) and the other end abuts against the other clamping block.

8. The plasma etching device according to claim 6, characterized in that: The base (2) is used to be connected to a high-frequency power source, and the coil (1) is used to be connected to a low-frequency power source.

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