High-performance chip heat dissipation package and processing technology thereof

Abstract

The invention relates to the technical field of chip heat dissipation, in particular to a high-performance chip heat dissipation package and a processing technology thereof. The high-performance chip heat dissipation package comprises a chip body, and the chip body is located between a package substrate and a sealing cover. The packaging substrate is made of a ceramic material or a resin material in which high-thermal-conductivity powder is dispersed, and the high-thermal-conductivity powder is selected from one of graphene oxide and high-thermal-conductivity metal powder; the sealing cover is made of a ceramic material or a resin material in which high-thermal-conductivity powder is dispersed, the high-thermal-conductivity powder is selected from one of graphene oxide and high-thermal-conductivity metal powder, and the high-thermal-conductivity metal powder comprises aluminum powder and / or copper powder; the packaging substrate and the sealing cover are made of the same basic material. The method creatively starts with a packaging shell, graphene oxide or high-heat-conduction metal powder is introduced into a packaging material in the chip packaging process, efficient soaking and heat transfer from a chip to a heat conduction interface material are achieved by means of the high heat conduction characteristic of the graphene oxide or the high-heat-conduction metal powder, the heat dissipation performance of the chip is improved, and efficient heat dissipation is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of chip heat dissipation, and in particular to a high-performance chip heat dissipation package and a processing technology thereof. Background Art

[0002] High-performance chips are semiconductor devices that excel in computing power, energy efficiency, or specific processing speeds, capable of meeting the demands of high-load, high-complexity tasks. As performance increases, the heat dissipation challenges faced by high-performance chips are becoming increasingly severe. High temperatures can lead to decreased chip performance and increased transistor leakage, creating a vicious cycle of "increased temperature and increased power consumption," causing device frequency throttling, lags, and even permanent hardware damage.

[0003] The core idea of ​​existing heat dissipation technology is to transfer heat through external heat dissipation structures (such as thermal interface materials, heat sinks, and air / liquid cooling systems). Research mainly focuses on innovations in heat dissipation structures and methods. For example, CN 119890157A provides a chip package with heat dissipation performance, including: a substrate having a substrate circuit layer; At least one chip, each of the chips being a horizontal chip, each of the chips having a first chip surface and an opposite second chip surface, the second chip surface facing the substrate, and having at least two horizontally separated die pads on the second chip surface, each of the die pads being electrically connected to the substrate circuit layer; an insulating layer disposed on the substrate and covering each of the chips, the insulating layer having an insulating layer surface; and a composite heat dissipation layer disposed on a surface of the insulating layer, the composite heat dissipation layer being composed of a copper layer and a graphene layer, wherein the graphene layer is disposed on a copper layer surface of the copper layer; Each of the chips is electrically connected to the outside via the substrate circuit layer of the substrate; The composite heat dissipation layer is located on the upper portion of the chip package and is used to directly generate heat dissipation effect for the chip package.

[0004] Another example: CN 117199045 A discloses a substrate for a power semiconductor package, wherein a semiconductor device is bonded to the substrate by contacting a first metal layer, a top bonding structure of the semiconductor device is bonded to the substrate through the first metal layer, and a terminal is bonded to the first metal layer; The substrate comprises: a first metal layer, the first metal layer being used for contacting the semiconductor device; a second metal layer, the second metal layer being configured to contact the heat sink; an electrically insulating layer disposed between the first metal layer and the second metal layer; and A first graphene bulk layer, wherein the first graphene bulk layer is arranged between the electrical insulating layer and the first metal layer, a first surface of the first graphene bulk layer contacts the first surface of the first metal layer, and a second surface of the first graphene bulk layer opposite to the first surface contacts the first surface of the electrical insulating layer.

[0005] Both of the aforementioned technical solutions focus on improving the chip's external heat dissipation structure, but neglect to enhance the internal thermal conductivity of the chip package (substrate and cover). This approach results in a reliance on "external passive cooling" and ignores the importance of the package as the "critical conduction path" between the chip and the external heat dissipation structure.

[0006] However, research on the internal thermal conductivity of package casings revealed that improving performance faces a technical bottleneck in material compatibility. The base material for package casings is typically ceramic or resin. Ceramics, such as aluminum nitride and alumina, have thermal conductivities ranging from tens to hundreds of W / (m·K) and are widely used in high-end chip packaging due to their excellent strength and insulation properties. Resins, such as epoxy, dominate the consumer chip market due to their low cost and simple molding process. However, resins also have limited thermal conductivity, at only 0.2-0.3 W / (m·K). While incorporating high-thermal-conductivity materials (such as graphene and metal powders) into package casings can improve heat dissipation, differences in the physical and chemical properties of these materials can lead to significant compatibility issues. For example, the high-temperature and high-pressure sintering process for ceramic packaging (typically exceeding 1600°C) conflicts with graphene's high-temperature oxidation properties (which begin to oxidize at approximately 400°C). Metal powders can react with the ceramic matrix at the interface, reducing the mechanical strength and insulation properties of the package material. In the resin packaging system, epoxy resin has poor compatibility with metal powder, and metal particles are prone to agglomeration, which not only reduces the uniformity of the material, but also may cause the risk of conductive short circuit, while weakening the mechanical properties and long-term reliability of the package.

[0007] Therefore, how to overcome the material compatibility barrier and develop packaging materials with both high thermal conductivity and structural stability has become a technical problem that needs to be solved urgently in high-performance chip cooling technology. Summary of the Invention

[0008] In response to the current technical problem of lack of packaging structures that improve the heat dissipation effect of chips by improving the thermal conductivity inside the packaging shell, the present invention provides a high-performance chip heat dissipation package and its processing technology. Starting from the packaging shell, the present invention creatively introduces graphene oxide or high thermal conductivity metal powder into the packaging material during the chip packaging process. With the help of their high thermal conductivity, efficient heat equalization and heat transfer from the chip to the thermal interface material are achieved, thereby improving the heat dissipation performance of the chip and achieving efficient heat dissipation.

[0009] The technical solutions of the present invention are as follows: In a first aspect, the present invention provides a high-performance chip heat dissipation package, comprising a chip body, wherein the chip body is located between a package substrate and a cover; The package substrate is made of a ceramic material or a resin material with high thermal conductivity powder dispersed therein, the high thermal conductivity powder is selected from one of graphene oxide and high thermal conductivity metal powder, and the high thermal conductivity metal powder includes aluminum powder and / or copper powder; The cover is made of a ceramic material or a resin material with high thermal conductivity powder dispersed inside. The high thermal conductivity powder is selected from one of graphene oxide and high thermal conductivity metal powder. The high thermal conductivity metal powder includes aluminum powder and / or copper powder. The basic material of the package substrate and the cover is the same.

[0010] The term "the packaging substrate and the cover being made of the same material" in the present invention means that both are made of a ceramic material or a resin material, and the types of high thermal conductivity powders added to the packaging substrate and the cover can be the same or different. For example, if the packaging substrate is made of a ceramic material with graphene oxide dispersed therein, the cover can be made of a ceramic material with graphene oxide dispersed therein, or a ceramic material with high thermal conductivity metal powder dispersed therein. If the packaging substrate is made of a resin material with copper powder dispersed therein, the cover can be made of a resin material with high thermal conductivity metal powder dispersed therein, or a resin material with graphene oxide dispersed therein.

[0011] Furthermore, the ceramic material may be a ceramic material having aluminum oxide or aluminum nitride as a main component. and / or, The resin material may be an epoxy resin material.

[0012] Furthermore, the purity of graphene oxide ranges from 70% to 99.9%.

[0013] Furthermore, the amount of high thermal conductivity powder added to the packaging substrate or cover is 0.1wt%-3wt% based on the weight of the packaging substrate or cover. Too little high thermal conductivity powder will not fully utilize its heat dissipation advantages; too much high thermal conductivity powder may affect other properties of the packaging material, such as mechanical strength and insulation performance.

[0014] Furthermore, a heat dissipation layer is provided on at least one surface of the packaging substrate and / or the cover.

[0015] For example, a heat dissipation layer is provided on the inner surface of the packaging substrate and / or cover. The heat dissipation layer can be fixed to the inner surface of the packaging substrate and / or cover by gluing, spraying, brushing, or other conventional methods. When gluing is used, a heat dissipation film, such as a graphene oxide heat dissipation film, must first be prepared, and then the heat dissipation film is adhered to the inner surface of the packaging substrate and / or cover using an adhesive. When spraying or brushing is used, a heat dissipation coating, such as a graphene oxide heat dissipation coating or a high thermal conductivity metal heat dissipation coating, must first be prepared, and then the coating is applied directly to the inner surface of the packaging substrate and / or cover using a spray gun, brush, or other tool.

[0016] As another example, a heat dissipation layer is provided on the outer surface of the packaging substrate and / or cover. The heat dissipation layer can be fixed to the outer surface of the packaging substrate and / or cover by gluing, spraying, brushing, or other conventional methods. When gluing is used, a heat dissipation film, such as a graphene oxide heat dissipation film, is first prepared, and then the heat dissipation film is adhered to the outer surface of the packaging substrate and / or cover using an adhesive. When spraying or brushing is used, a heat dissipation coating, such as a graphene oxide heat dissipation coating or a high thermal conductivity metal heat dissipation coating, is first prepared, and then the coating is applied directly to the outer surface of the packaging substrate and / or cover using a spray gun, brush, or other tool.

[0017] For another example, a heat dissipation layer is provided on the inner and outer surfaces of the packaging substrate and / or cover. The heat dissipation layer can be fixed to the inner and outer surfaces of the packaging substrate and / or cover by gluing, spraying, brushing, or other conventional methods. When gluing is used, a heat dissipation film, such as a graphene oxide heat dissipation film, must first be prepared, and then the heat dissipation film is adhered to the inner and outer surfaces of the packaging substrate and / or cover using an adhesive. When spraying or brushing is used, a heat dissipation coating, such as a graphene oxide heat dissipation coating or a high thermal conductivity metal heat dissipation coating, must first be prepared, and then the coating is applied directly to the inner and outer surfaces of the packaging substrate and / or cover using a spray gun, brush, or other tool.

[0018] Furthermore, the heat dissipation layer is a graphene oxide heat dissipation layer or a high thermal conductivity metal heat dissipation layer. As a preferred technical solution, the heat dissipation component contained in the heat dissipation layer is the same as the high thermal conductivity powder used in the package substrate and the cover. For example, if graphene oxide is used as the high thermal conductivity powder in the package substrate and the cover, the heat dissipation component in the heat dissipation layer is also graphene oxide; similarly, if high thermal conductivity metal powder is used in the package substrate and the cover, the heat dissipation component in the heat dissipation layer is also high thermal conductivity metal.

[0019] Furthermore, the thickness of the heat dissipation layer is between 10 microns and 500 microns. If the heat dissipation layer is too thin, the heat dissipation effect is not obvious; if the heat dissipation layer is too thick, the cost will increase and the overall structure and performance of the package may be affected.

[0020] In a second aspect, the present invention provides a processing technology for the above-mentioned high-performance chip heat dissipation package, comprising S1, preparation of the heat dissipation package and S2, assembly of the package structure; Among them, S1, the preparation of the heat dissipation package at least includes the steps of evenly mixing high thermal conductivity powder with ceramic material or resin material, and then processing and molding to obtain a packaging substrate and a cover, wherein the particle size of the high thermal conductivity powder is between 5 nanometers and 3000 nanometers.

[0021] This particle size range ensures good dispersion in the packaging material while fully utilizing its high thermal conductivity. Too small a particle size may lead to agglomeration, while too large a particle size is not conducive to uniform dispersion and thermal conductivity.

[0022] Furthermore, depending on the selected packaging substrate and cover base materials, there are certain differences between step S1 and step S2. When a chip is packaged using a ceramic packaging substrate and cover, the processing technology specifically includes the following steps: S1. Preparation of heat dissipation package S11, uniformly dispersing the high thermal conductivity powder in the ceramic material by stirring, ultrasonication and ball milling in sequence; S12, vacuum exhausting the mixed material, and then tape casting to obtain a green body of a desired shape; S13, drying and degreasing the green body, and finally sintering to obtain a packaging substrate and a cover; S2. Assembly of packaging structure The chips are assembled and the pins are tinned and cut into shape.

[0023] Furthermore, it also includes S14, processing a heat dissipation layer on the surface of the packaging substrate and / or the cover. The surface mentioned in the present invention includes at least one surface of the inner surface and the outer surface. During the processing, it is necessary to ensure that the heat dissipation layer is evenly covered without bubbles and omissions. The heat dissipation layer can be processed by pasting, spraying, brushing or other conventional methods. When the pasting method is adopted, it is necessary to first prepare a heat dissipation film, such as a graphene oxide heat dissipation film, and then use an adhesive to stick the heat dissipation film to the surface of the packaging substrate and / or the cover; when the spraying or brushing method is adopted, it is necessary to first prepare a heat dissipation coating, such as a graphene oxide heat dissipation coating or a high thermal conductivity metal heat dissipation coating, and then use a spray gun, a brush and other tools for construction.

[0024] Furthermore, when the chip is packaged using a packaging substrate and a cover made of resin material, the processing technology specifically includes the following steps: S1. Preparation of heat dissipation package S11, mixing the high thermal conductivity powder and the resin material and adding them into a twin-screw extruder, mixing them through a melt reaction, and then performing molding, and demolding to obtain a semi-finished product of a packaging substrate and a cover; S12, baking and hardening the semi-finished product of the packaging substrate and the cover; S2. Assembly of packaging structure The chips are assembled and the pins are tinned and cut into shape.

[0025] Furthermore, between S11 and S12, a heat dissipation layer is processed on the surface of the packaging substrate and / or cover. The "between S11 and S12" mentioned in the present invention refers to the period after the completion of step S11 and before the completion of step S12, that is, after obtaining the semi-finished packaging substrate and cover, a heat dissipation layer can be processed on their surface first, and then a baking and hardening operation can be performed. The surface mentioned in the present invention includes at least one surface of the inner surface and the outer surface. During the processing, it is necessary to ensure that the heat dissipation layer is evenly covered without bubbles or omissions. The heat dissipation layer can be processed by pasting, spraying, brushing or other conventional methods. When the pasting method is used, a heat dissipation film, such as a graphene oxide heat dissipation film, is first prepared, and then the heat dissipation film is pasted to the surface of the packaging substrate and / or cover using an adhesive; when the spraying or brushing method is used, a heat dissipation coating, such as a graphene oxide heat dissipation coating or a high thermal conductivity metal heat dissipation coating, is first prepared, and then a spray gun, brush or other tools are used for construction.

[0026] The beneficial effects of the present invention are: By evenly dispersing highly thermally conductive materials within the packaging structure and combining them with heat dissipation layers on the inner and outer walls of the package, this method effectively equalizes and transfers heat, providing heat dissipation pathways and improving heat dissipation efficiency. The method has broad applicability and proposes specific processing techniques for two common packaging materials in the chip industry: ceramic or resin. Furthermore, this process offers the advantages of a simple process, compatibility with existing production lines, strong operability, and ease of scalable production, effectively reducing manufacturing costs and improving economic efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] Figure 1 It is a flow chart of the heat dissipation packaging process when ceramic materials are used for packaging in a specific embodiment of the present invention.

[0029] Figure 2 It is a flow chart of the heat dissipation packaging process when resin material is used for packaging in a specific embodiment of the present invention.

[0030] Figure 3 It is a schematic diagram of the heat dissipation packaging structure of Example 1 in a specific implementation manner of the present invention.

[0031] Figure 3 In the figure, 1-cover, 2-chip body, 3-bonding gold wire, 4-high thermal conductivity powder, 5-package substrate, 6-lead frame, 7-heat dissipation layer. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0033] A high-performance chip heat dissipation package includes a chip body, wherein the chip body is located between a package substrate and a cover; The package substrate is made of a ceramic material or a resin material with high thermal conductivity powder dispersed therein, the high thermal conductivity powder is selected from one of graphene oxide and high thermal conductivity metal powder, and the high thermal conductivity metal powder includes aluminum powder and / or copper powder; The cover is made of a ceramic material or a resin material with high thermal conductivity powder dispersed inside. The high thermal conductivity powder is selected from one of graphene oxide and high thermal conductivity metal powder. The high thermal conductivity metal powder includes aluminum powder and / or copper powder. The basic material of the package substrate and the cover is the same.

[0034] The term "high-performance chip" in this context refers to semiconductor devices that excel in computing power, energy efficiency, or processing speed for specific tasks. Applications for high-performance chips primarily include artificial intelligence and machine learning, data centers and cloud computing, autonomous driving and edge computing, and 5G / 6G communications.

[0035] The high-performance chip heat dissipation package described in this invention refers to a package structure capable of meeting the heat dissipation requirements of high-performance chips. The term "high-performance chip" is used here only to illustrate the advantages of this package structure in terms of heat dissipation and thermal conductivity, and does not limit the application of this heat dissipation package. The heat dissipation package of this invention is also applicable to other chips.

[0036] In some embodiments of the present invention, a high-performance chip heat dissipation package includes a chip body, which is located between a package substrate and a cover, and both the package substrate and the cover are made of a ceramic material with graphene oxide dispersed therein.

[0037] In other embodiments of the present invention, the high-performance chip heat dissipation package includes a chip body, which is located between a package substrate and a cover, and both the package substrate and the cover are made of a ceramic material with copper powder and / or aluminum powder dispersed inside.

[0038] In other embodiments of the present invention, a high-performance chip heat dissipation package includes a chip body, which is located between a packaging substrate and a cover. The packaging substrate is made of a ceramic material with graphene oxide dispersed inside, and the cover is made of a ceramic material with copper powder dispersed inside.

[0039] In other embodiments of the present invention, the high-performance chip heat dissipation package includes a chip body, which is located between a packaging substrate and a cover. The packaging substrate is made of a ceramic material with copper powder dispersed inside, and the cover is made of a ceramic material with aluminum powder dispersed inside.

[0040] In other embodiments of the present invention, a high-performance chip heat dissipation package includes a chip body, which is located between a package substrate and a cover, and both the package substrate and the cover are made of a resin material with graphene oxide dispersed therein.

[0041] In other embodiments of the present invention, the high-performance chip heat dissipation package includes a chip body, which is located between a package substrate and a cover, and both the package substrate and the cover are made of a resin material with aluminum powder and / or copper powder dispersed inside.

[0042] In other embodiments of the present invention, a high-performance chip heat dissipation package includes a chip body, which is located between a packaging substrate and a cover. The packaging substrate is made of a resin material with graphene oxide dispersed inside, and the cover is made of a resin material with copper powder dispersed inside.

[0043] In other embodiments of the present invention, the high-performance chip heat dissipation package includes a chip body, which is located between a packaging substrate and a cover. The packaging substrate is made of a resin material with copper powder dispersed inside, and the cover is made of a resin material with aluminum powder dispersed inside.

[0044] As a preferred embodiment, the ceramic material used in the above embodiment is a ceramic material with aluminum oxide (Al2O3) or aluminum nitride (AlN) as the main component. It is further preferred to use aluminum nitride ceramic powder. Aluminum nitride has a high thermal conductivity (theoretical thermal conductivity is about 180-200 W / (m·K)), which can provide a good basis for heat dissipation.

[0045] As a preferred embodiment, the resin material used in the above embodiment is epoxy resin material. Epoxy resin has good electrical insulation and mechanical properties and is suitable for chip packaging.

[0046] As a preferred embodiment, the graphene oxide used in the above embodiment has a purity of 70% to 99.9%. The 70% to 99.9% mentioned in the present invention includes a lower limit of 70% and an upper limit of 99.9%. Specifically, the purity of the graphene oxide can be 70%, 75%, 80%, 85%, 90%, 95%, 98%, 99.9%, etc. Further preferably, the graphene oxide is produced using the Brodie method, the Staudenmaier method, or the Hummers method.

[0047] As a preferred embodiment, in the above embodiment, based on the mass of the packaging substrate or the cover, the amount of high thermal conductivity powder added to the packaging substrate or the cover is 0.1wt%-3wt%, respectively. The 0.1wt%-3wt% mentioned in the present invention includes a lower limit of 0.1wt% and an upper limit of 3wt%. Specifically, for the packaging substrate, the mass of the high thermal conductivity powder added to the packaging substrate accounts for 0.1wt%-3wt% of the mass of the packaging substrate, such as 0.1wt%, 0.3wt%, 0.5wt%, 0.8wt%, 1.0wt%, 1.5wt%, 2.0wt%, 2.5wt%, 3.0wt%, etc.; for the cover, the mass of the high thermal conductivity powder added to the cover accounts for 0.1wt%-3wt% of the mass of the cover, such as 0.1wt%, 0.3wt%, 0.5wt%, 0.8wt%, 1.0wt%, 1.5wt%, 2.0wt%, 2.5wt%, 3.0wt%, etc. At this dosage, the distance between particles is greater than the critical contact distance (about 100 nanometers), and a penetrating conductive channel cannot be formed, and heat is only transferred through "point-to-point" contact.

[0048] As a preferred embodiment, in order to further improve the thermal conductivity / heat dissipation effect of the heat dissipation package, a heat dissipation layer is provided on at least one side surface of the package substrate and / or cover of the high-performance chip heat dissipation package described in the above embodiment.

[0049] For example, a heat dissipation layer can be preferentially placed on the inner surface of the package substrate and cover, i.e., the side closest to the chip body. To further enhance the thermal conductivity and heat dissipation of the heat dissipation package, a heat dissipation layer can be placed on the outer surface of the package substrate and cover. This outer surface of the package substrate and cover is in contact with or close to an external heat sink, further reducing the thermal resistance of the package material itself.

[0050] The heat dissipation layer can be made of either graphene oxide or a high-thermal-conductivity metal. Generally speaking, the heat dissipation component of the heat dissipation layer must be the same type as the high-thermal-conductivity powder used in the package substrate and cover. If the package substrate and cover use graphene oxide as the high-thermal-conductivity powder, it is best to also use graphene oxide as the core heat dissipation component of the heat dissipation layer. If the package substrate and cover use high-thermal-conductivity metal powder (such as copper powder or aluminum powder), it is best to use the same metal as the primary heat dissipation component of the heat dissipation layer. This consistent composition design avoids heat dissipation bottlenecks caused by differences in material thermal conductivity and ensures uniform heat transfer within the package system.

[0051] Depending on factors such as structural complexity, production scale, and cost budget, technicians can use methods such as pasting, spraying, and brushing to build a heat dissipation layer on the surface of the packaging substrate and cover. They can also consider using new technologies such as chemical vapor deposition (CVD) and electrochemical deposition.

[0052] Among them, the graphene oxide heat dissipation layer can be constructed by pasting or spraying. Taking the pasting process as an example, first, a layer of graphene oxide heat dissipation film with controllable thickness needs to be prepared. The preparation method of graphene oxide heat dissipation film is an existing technology and will not be described in detail here. For example, a casting method is used, and then a layer of high-temperature resistant adhesive, such as epoxy-based high-temperature adhesive (insulation resistance>10 12 Ohm), etc., and then accurately stick the graphene oxide heat dissipation film to the position where the adhesive is applied, ensuring that it is firmly and smoothly pasted without bubbles and wrinkles.

[0053] The high-thermal-conductivity metal heat dissipation layer can be applied using either a spraying or brushing process. For example, spraying involves preparing a thermally conductive metal heat dissipation coating. The preparation method for this coating is conventional and will not be detailed here. A spray gun is then used to spray the coating onto the package substrate or cover where the heat dissipation layer is to be applied. By controlling the spraying pressure and distance and applying multiple coats, the required heat dissipation layer thickness is achieved. After spraying, the coating is baked to fully dry and solidify. Alternatively, copper foil, aluminum foil, or other materials can be directly applied to the package substrate or cover surface using a pasting method to form a high-thermal-conductivity metal heat dissipation layer.

[0054] The thickness of the heat dissipation layer must be determined in a balanced manner, taking into account both heat dissipation performance and cost. If the thickness is too thin, the desired heat dissipation effect will be insufficient. If the thickness is too thick, not only will costs increase, but it may also affect the integrity and performance of the package structure. Therefore, the optimal thickness of the heat dissipation layer is between 10 microns and 500 microns. The term "10 microns to 500 microns" used in this invention includes a lower limit of 10 microns and an upper limit of 500 microns.

[0055] As a preferred embodiment, a heat sink is further provided on the outside of the high-performance chip heat dissipation package of the present invention.

[0056] Because nanoscale high-thermal-conductivity materials have large surface areas and high surface energies, they easily aggregate to form "thermal islands." Failure to effectively address the dispersion of these materials will prevent them from fully realizing their high thermal conductivity, potentially impacting other properties of the packaging substrate and cover. Therefore, it is crucial to rationally select processing techniques and control parameters to ensure uniform distribution of the high-thermal-conductivity powder within the packaging material. Based on this, the present invention provides a method for preparing these packaging substrates and covers, as well as a process for processing high-performance chip heat dissipation packages using these substrates and covers.

[0057] The preparation method of the packaging substrate and the cover includes at least the steps of uniformly mixing high thermal conductivity powder with ceramic material or resin material, and then processing and shaping to obtain the packaging substrate and the cover, wherein the particle size of the high thermal conductivity powder is between 5 nanometers and 3000 nanometers.

[0058] The processing technology of high-performance chip heat dissipation package includes S1, preparation of heat dissipation package and S2, assembly of package structure; Among them, S1, the preparation of the heat dissipation package at least includes the steps of evenly mixing high thermal conductivity powder with ceramic material or resin material, and then processing and molding to obtain a packaging substrate and a cover, wherein the particle size of the high thermal conductivity powder is between 5 nanometers and 3000 nanometers.

[0059] The range between 5 nanometers and 3000 nanometers mentioned in the present invention includes a lower limit of 5 nanometers and an upper limit of 3000 nanometers.

[0060] like Figure 1 As shown, when ceramic materials are used for packaging, the process of the heat dissipation packaging process is as follows: S1. Preparation of heat dissipation package (package substrate, cover) S11. Disperse high thermal conductivity powder (graphene oxide or high thermal conductivity metal powder) uniformly in the ceramic material by stirring and ultrasonication, then add additives to the mixed ceramic material, and mix by ball milling to ensure that all ingredients are fully mixed.

[0061] During the dispersion process, stirring is used to achieve an initial uniform mixing of the materials. Ultrasonic cavitation is then used to further refine the particles and enhance dispersion. Ball milling allows for a more uniform distribution of the high thermal conductivity powder and various additives within the ceramic material. This mixing method allows the graphene oxide to be evenly distributed as single flakes or small aggregates (<100 nanometers in size), rather than a continuous network structure, thus avoiding the formation of conductive clusters.

[0062] Additives include binders, plasticizers, and sintering aids. Binders can enhance the bonding force between ceramic powders to ensure the strength of the package structure after molding; plasticizers can improve the plasticity of the ceramic body to facilitate subsequent molding processing; sintering aids can adjust the performance of ceramic materials according to actual needs, such as improving their thermal stability.

[0063] S12. The mixed material is subjected to vacuum exhaust treatment to remove bubbles therein to avoid defects during the molding process. Then, the degassed material is formed into a green body with a certain thickness and shape by controlling the height and movement speed of the scraper using a tape casting process.

[0064] S13. Dry the green body to remove moisture, then degrease to remove organic matter such as binders and plasticizers to avoid impurities during the sintering process, and finally sinter. The sintering process can adopt pressureless sintering, hot pressing sintering and hot isostatic pressing sintering. Through sintering, the ceramic green body is densified to improve its strength and thermal conductivity, and finally the packaging substrate and cover are obtained.

[0065] S14. If graphene oxide is used as the high thermal conductivity powder, apply a graphene oxide heat dissipation film or spray a graphene oxide heat dissipation coating to the surface of the package substrate and / or cover with an adhesive. If a high thermal conductivity metal powder is used as the high thermal conductivity powder, apply a corresponding metal foil or spray a thermally conductive metal heat dissipation coating. During the application or spraying process, ensure that the heat dissipation film or coating is evenly covered without bubbles or omissions.

[0066] S2. Assembly of packaging structure Complete the chip assembly work, including bonding the leads to the substrate, bonding the chip, wire bonding, and then bonding the substrate to the cover. Finally, tin the pins to enhance the conductivity and solderability of the pins, and cut and shape the pins to make the chip package meet actual usage needs.

[0067] like Figure 2 As shown, in the case of using resin materials for packaging, the process of the heat dissipation packaging process is as follows: S11. Mix high thermal conductivity powder (graphene oxide or high thermal conductivity metal powder) with resin material and add it to a twin-screw extruder for melt reaction mixing. Through the rotation and shear force of the screw, the graphene oxide or high thermal conductivity metal powder is evenly dispersed in the resin material, and then molded and demolded to obtain a semi-finished product of the packaging substrate and cover.

[0068] Through the strong shear mixing of the twin-screw extruder, graphene oxide and high thermal conductivity metal powder can be completely wrapped by the resin, and the insulation properties of the packaging material will not be affected.

[0069] When graphene oxide is used as the high thermal conductivity powder, the process also includes attaching a graphene oxide heat dissipation film or spraying a graphene oxide heat dissipation coating onto the surface of the semi-finished package substrate and / or cover using an adhesive. When a high thermal conductivity metal powder is used as the high thermal conductivity powder, the process also includes attaching a corresponding metal foil or spraying a thermally conductive metal heat dissipation coating. During the attaching or spraying process, ensure that the heat dissipation film or coating is evenly covered without bubbles or omissions.

[0070] S12. Bake and harden the semi-finished products of the packaging substrate and the cover to enhance their structural strength.

[0071] S2. Assembly of packaging structure Complete the chip assembly work, including bonding the leads to the substrate, bonding the chip, wire bonding, and then bonding the substrate to the cover. Finally, tin the pins to enhance the conductivity and solderability of the pins, and cut and shape the pins to make the chip package meet actual usage needs.

[0072] In summary, the innovations of the high-performance chip heat dissipation package or its processing technology provided by the present invention are mainly: (1) Innovation in heat dissipation paths: Breaking through the limitations of traditional external heat dissipation, starting from the packaging link between the chip and the thermal interface material, graphene oxide and / or high thermal conductivity metal powder are introduced into the packaging material to build an internal efficient heat dissipation channel, shorten the heat conduction distance, and improve heat dissipation efficiency.

[0073] (2) Material and process coordination: Ceramic packaging adopts the "stirring + ultrasound + ball milling" dispersion process, and resin packaging uses a twin-screw extruder for strong shear mixing to ensure that the high thermal conductivity material is evenly dispersed. Combined with vacuum degassing, sintering, spraying and other processes, a balance between heat dissipation and structural strength is achieved.

[0074] (3) Parameter optimization and universality: Precisely control the amount of high thermal conductivity material added (0.1wt%-3wt%), particle size (5nm-3000nm) and coating thickness (10μm-500μm), adapt to ceramic and resin packaging, compatible with various chip types, simple process and easy to scale production.

[0075] (4) Internal and external coordinated heat dissipation: A heat dissipation layer is set on the inner and outer walls of the package to form a multi-level heat dissipation system with the internal high thermal conductivity material, which significantly improves heat equalization and conduction efficiency.

[0076] Example 1 like Figure 3 As shown, a high-performance chip heat dissipation package includes a chip body 2, and the chip body 2 is located between a package substrate 5 and a cover 1; Among them, the packaging substrate 5 and the cover 1 are both made of ceramic materials with graphene oxide dispersed inside; A heat dissipation layer 7 is adhered to the inner and outer surfaces of the packaging substrate 5 and the cover 1 . The heat dissipation layer 7 is a 100-micron-thick graphene oxide heat dissipation film.

[0077] Specifically, the processing technology of the heat dissipation package is as follows: S1. Preparation of heat dissipation package (package substrate, cover) S11. Dispersing the Materials: Place 100 g of 99.5% pure aluminum nitride ceramic powder into the milling jar of a planetary ball mill, then add 0.8 g of 98% pure graphene oxide (particle size 800 nm). Set the ball mill speed to 400 rpm and stir for 30 minutes to achieve a preliminary uniform mixing of the graphene oxide and ceramic powder. Then, activate the ultrasonic dispersion device at 300 W power for 30 minutes, utilizing the ultrasonic cavitation effect to further disperse the graphene oxide. Subsequently, add 5 g of phenolic resin (binder), 3 g of dioctyl phthalate (DOP, plasticizer), and 1 g of yttrium oxide (Y2O3, sintering aid). Continue ball milling for 3 hours to ensure thorough and uniform mixing of all ingredients.

[0078] Among them, aluminum nitride has a high thermal conductivity (theoretical thermal conductivity is about 180-200W / (m·K)), which can provide a good foundation for heat dissipation. Graphene oxide with 98% purity and 800 nanometer particle size can be well dispersed in ceramic powder while ensuring high thermal conductivity, avoiding agglomeration that affects heat dissipation performance. Phenolic resin has good bonding properties and thermal stability, and can effectively enhance the bonding force between ceramic particles during the sintering process. Dioctyl phthalate can increase the plasticity and flexibility of the ceramic body, facilitating subsequent molding and processing. Yttrium oxide can improve the sintering performance of aluminum nitride ceramics, promote the densification of ceramics, and further enhance their thermal conductivity.

[0079] S12, Vacuum Degassing and Tape Casting: The mixed material is transferred to a vacuum degassing device and degassed at a vacuum of 50 Pa for 1.5 hours to remove air bubbles and prevent defects during the molding process. After degassing, a green body is produced using a tape casting process. The blade height of the tape casting machine is adjusted to 1.2 mm, and the casting speed is controlled at 8 cm / min. The material is evenly cast onto the carrier tape to form a green body of uniform thickness.

[0080] S13, drying, degreasing and sintering: Place the tape-cast green body in a drying oven and dry it at 100°C for 2 hours to remove the moisture. The dried green body is then placed in a degreasing furnace, heated to 600°C at a heating rate of 6°C / min, and kept warm for 2 hours for degreasing to remove organic matter such as binders and plasticizers. Finally, the hot pressing sintering process is used for sintering, with a sintering pressure of 30MPa, a sintering temperature of 1700°C, and a holding time of 2.5 hours. Through hot pressing sintering, the ceramic green body is densified, its strength and thermal conductivity are improved, and finally the packaging substrate and cover are obtained.

[0081] S14. Pasting of heat dissipation layer: Apply a layer of epoxy-based high-temperature adhesive (with a curing temperature of 180°C and a curing time of 2 hours) evenly on the inner and outer surfaces of the sintered packaging substrate and / or cover, and then accurately paste a 100-micron-thick graphene oxide heat dissipation film on it, ensuring that it is firmly pasted, flat, and free of bubbles and wrinkles.

[0082] The thermal conductivity of the graphene oxide heat dissipation film is greater than 5000W / (m·K), and it has good flexibility and high thermal conductivity, which can effectively and evenly transfer the heat generated by the chip.

[0083] S2. Assembly of packaging structure According to the chip packaging process requirements, silver glue is used to bond the leads to the substrate. The curing temperature of the silver glue is 150°C and the curing time is 1 hour. The chip is then attached to the packaging substrate, also using silver glue, and the curing conditions are the same as for the lead bonding. The chip uses a high-performance chip for artificial intelligence reasoning. Its core area is 150 square millimeters, and its power consumption is 300W when running at a typical operating frequency of 2.5GHz and full load. The normal operating temperature range of the chip is set to 40-75°C. When the temperature exceeds 75°C, its operation error rate will increase significantly and its performance will degrade significantly.

[0084] After the chip is attached, wire bonding is performed, with the bonding parameters set to 8 grams of force, 2 milliseconds of bonding time, and 80W of ultrasonic power. After bonding, the package substrate and cover are bonded together using a special ceramic adhesive and cured at room temperature for 3 hours. Finally, the pins are tinned using an acidic tinning solution at 260°C for 2 minutes, with a thickness of 5-8 microns. After tinning, the pins are cut and shaped using high-precision cutting equipment, with a cutting accuracy of ±0.03 mm.

[0085] Comparative Example 1 To verify the heat dissipation effect of the packaging material of Example 1, a ceramic packaging substrate and a cover made of undoped graphene oxide were prepared based on Example 1. The specific structure is as follows: A high-performance chip heat dissipation package includes a chip body 2, wherein the chip body 2 is located between a package substrate 5 and a cover 1; Among them, the packaging substrate 5 and the cover 1 are both made of ceramic materials; A heat dissipation layer 7 is adhered to the inner and outer surfaces of the packaging substrate 5 and the cover 1 . The heat dissipation layer 7 is a 100-micron-thick graphene oxide heat dissipation film.

[0086] Specifically, the processing technology of the heat dissipation package is as follows: S1. Preparation of heat dissipation package (package substrate, cover) S11. Disperse materials: Place 100 g of aluminum nitride ceramic powder with a purity of 99.5% into the ball mill jar of a planetary ball mill, add 5 g of phenolic resin (binder), 3 g of dioctyl phthalate (DOP, plasticizer) and 1 gram of yttrium oxide (Y2O3, sintering aid), and continue ball milling for 3 hours to ensure that all ingredients are fully and evenly mixed.

[0087] S12, Vacuum Degassing and Tape Casting: The mixed material is transferred to a vacuum degassing device and degassed at a vacuum of 50 Pa for 1.5 hours to remove air bubbles and prevent defects during the molding process. After degassing, a green body is produced using a tape casting process. The blade height of the tape casting machine is adjusted to 1.2 mm, and the casting speed is controlled at 8 cm / min. The material is evenly cast onto the carrier tape to form a green body of uniform thickness.

[0088] S13, drying, degreasing and sintering: Place the tape-cast green body in a drying oven and dry it at 100°C for 2 hours to remove the moisture. The dried green body is then placed in a degreasing furnace, heated to 600°C at a heating rate of 6°C / min, and kept warm for 2 hours for degreasing to remove organic matter such as binders and plasticizers. Finally, the hot pressing sintering process is used for sintering, with a sintering pressure of 30MPa, a sintering temperature of 1700°C, and a holding time of 2.5 hours. Through hot pressing sintering, the ceramic green body is densified, its strength and thermal conductivity are improved, and finally the packaging substrate and cover are obtained.

[0089] S14. Pasting of heat dissipation layer: Apply a layer of epoxy-based high-temperature adhesive (with a curing temperature of 180°C and a curing time of 2 hours) evenly on the inner and outer surfaces of the sintered packaging substrate and / or cover, and then accurately paste a 100-micron-thick graphene oxide heat dissipation film on it, ensuring that it is firmly pasted, flat, and free of bubbles and wrinkles.

[0090] S2. Assembly of packaging structure According to the chip packaging process requirements, silver glue is used to bond the leads to the substrate. The curing temperature of the silver glue is 150°C and the curing time is 1 hour. The chip is then attached to the packaging substrate, also using silver glue, and the curing conditions are the same as for the lead bonding. The chip uses a high-performance chip for artificial intelligence reasoning. Its core area is 150 square millimeters, and its power consumption is 300W when running at a typical operating frequency of 2.5GHz and full load. The normal operating temperature range of the chip is set to 40-75°C. When the temperature exceeds 75°C, its operation error rate will increase significantly and its performance will degrade significantly.

[0091] After the chip is attached, wire bonding is performed, with the bonding parameters set to 8 grams of force, 2 milliseconds of bonding time, and 80W of ultrasonic power. After bonding, the package substrate and cover are bonded together using a special ceramic adhesive and cured at room temperature for 3 hours. Finally, the pins are tinned using an acidic tinning solution at 260°C for 2 minutes, with a thickness of 5-8 microns. After tinning, the pins are cut and shaped using high-precision cutting equipment, with a cutting accuracy of ±0.03 mm.

[0092] Test Example 1 The test was carried out at an ambient temperature of 25°C and a relative humidity of 40%-60% to simulate a regular indoor working environment.

[0093] The packaged chips of Example 1 and Comparative Example 1 were installed on a dedicated test platform, and the chip temperature was continuously monitored while operating at full load. After 30 minutes of operation, the chip temperature of Example 1 stabilized at around 65°C, within the normal operating temperature range. The chip's computing performance was stable, with no operational errors or performance degradation. However, the chip temperature of Comparative Example 1 quickly rose to 75°C, reaching the upper limit of the normal operating temperature range. Continued full-load operation would quickly lead to excessive chip temperature, a significant increase in operational errors, and performance degradation.

[0094] Example 2 A high-performance chip heat dissipation package includes a chip body 2, wherein the chip body 2 is located between a package substrate 5 and a cover 1; The package substrate 5 and the cover 1 are both made of a resin material with copper powder dispersed inside. A heat dissipation layer 7 is sprayed on the inner surface of the packaging substrate 5 and the cover 1. The heat dissipation layer 7 is a copper powder heat dissipation coating with a thickness of 150 microns.

[0095] Specifically, the processing technology of the heat dissipation package is as follows: S1. Preparation of heat dissipation package (package substrate, cover) S11, Molding and Heat Dissipation Layer Spraying: Add 2 grams of copper powder with a particle size of 1000 nanometers, 100 grams of epoxy resin, and 80 grams of anhydride curing agent to a twin-screw extruder. Set the screw speed to 300 rpm, and set the barrel temperature from the feeding section to the die to 180°C, 200°C, and 210°C, respectively. The mixing time is 15 minutes. After mixing, the material is injected into the mold for molding. The molding pressure is 8 MPa, the molding temperature is 160°C, and the holding time is 8 minutes. After demolding, the semi-finished products of the molded packaging substrate and the cover are inspected for appearance and measured for size to ensure that they meet the design requirements.

[0096] Epoxy resin has good electrical insulation and mechanical properties, making it suitable for chip packaging. Copper has a thermal conductivity of up to 401W / (m·K), which can effectively improve the thermal conductivity of the packaging material. Acid anhydride curing agent is used to cure epoxy resin, improving the strength and stability of the package.

[0097] After cleaning the inner surfaces of the semi-finished package substrate and cover, a copper powder heat dissipation coating is sprayed using a spray gun. This coating uses copper powder as a thermally conductive filler and an acrylic resin as a base, with the copper powder content reaching 60% by weight. The spray gun is applied at a pressure of 0.3 MPa, with a distance of 15 cm from the coating surface. Three spraying passes are performed, with 15-minute intervals between each application, to achieve a coating thickness of approximately 150 microns. After spraying, the coating is allowed to air dry at room temperature for 30 minutes, then baked in an oven at 80°C for one hour to fully dry and cure.

[0098] S12. Baking and hardening: Place the semi-finished product of the packaging substrate and the cover into an oven for baking and hardening at a temperature of 130°C for 3 hours to enhance its structural strength.

[0099] S2. Assembly of packaging structure According to the chip packaging process requirements, silver glue is used to bond the leads to the substrate. The silver glue cures at 150°C for 1 hour. The chip is then attached to the packaging substrate using epoxy die adhesive. The cure temperature is 120°C for 1.5 hours. The chip used is a communications chip for 5G base stations. Its core area is 120 square millimeters and its power consumption is 250W when operating at a frequency of 3.5GHz and full load. The chip's normal operating temperature range is 35-70°C. When the temperature exceeds 70°C, signal transmission quality is affected and the bit error rate increases.

[0100] After the chip is attached, wire bonding is performed, with bonding parameters set to 7 grams of force, 1.5 milliseconds of bonding time, and 70W of ultrasonic power. After bonding, the encapsulation substrate and cover are bonded together using an epoxy-based chip adhesive and cured at room temperature for 3 hours. Finally, the pins are tinned using an acidic tinning solution at 260°C for 2 minutes, with a thickness of 5-8 microns. After tinning, the pins are cut and shaped using high-precision cutting equipment, with a cutting accuracy of ±0.03 mm.

[0101] In order to verify the heat dissipation effect of the packaging material of Example 2, a resin packaging substrate and a cover without copper powder doping were prepared based on Example 2. The specific structure is as follows: A high-performance chip heat dissipation package includes a chip body 2, wherein the chip body 2 is located between a package substrate 5 and a cover 1; Among them, the packaging substrate 5 and the cover 1 are both made of resin material; A heat dissipation layer 7 is sprayed on the inner surface of the packaging substrate 5 and the cover 1. The heat dissipation layer 7 is a copper powder heat dissipation coating with a thickness of 150 microns.

[0102] Specifically, the processing technology of the heat dissipation package is as follows: S1. Preparation of heat dissipation package (package substrate, cover) S11, Molding and Heat Dissipation Layer Spraying: Add 100 grams of epoxy resin and 80 grams of anhydride curing agent into a twin-screw extruder, set the screw speed to 300 rpm, and set the barrel temperature from the feeding section to the die to 180°C, 200°C, and 210°C, respectively. The mixing time is 15 minutes. After mixing, the material is injected into the mold for molding. The molding pressure is 8 MPa, the molding temperature is 160°C, and the holding time is 8 minutes. After demolding, the appearance of the molded packaging substrate and the semi-finished product of the cover are inspected and the dimensions are measured to ensure that they meet the design requirements.

[0103] After cleaning the inner surfaces of the semi-finished package substrate and cover, a copper powder heat dissipation coating is sprayed using a spray gun. This coating uses copper powder as a thermally conductive filler and an acrylic resin as a base, with the copper powder content reaching 60% by weight. The spray gun is applied at a pressure of 0.3 MPa, with a distance of 15 cm from the coating surface. Three spraying passes are performed, with 15-minute intervals between each application, to achieve a coating thickness of approximately 150 microns. After spraying, the coating is allowed to air dry at room temperature for 30 minutes, then baked in an oven at 80°C for one hour to fully dry and cure.

[0104] S12. Baking and hardening: Place the semi-finished product of the packaging substrate and the cover into an oven for baking and hardening at a temperature of 130°C for 3 hours to enhance its structural strength.

[0105] S2. Assembly of packaging structure According to the chip packaging process requirements, silver glue is used to bond the leads to the substrate. The silver glue cures at 150°C for 1 hour. The chip is then attached to the packaging substrate using epoxy die adhesive. The cure temperature is 120°C for 1.5 hours. The chip used is a communications chip for 5G base stations. Its core area is 120 square millimeters and its power consumption is 250W when operating at a frequency of 3.5GHz and full load. The chip's normal operating temperature range is 35-70°C. When the temperature exceeds 70°C, signal transmission quality is affected and the bit error rate increases.

[0106] After the chip is attached, wire bonding is performed, with bonding parameters set to 7 grams of force, 1.5 milliseconds of bonding time, and 70W of ultrasonic power. After bonding, the encapsulation substrate and cover are bonded together using an epoxy-based chip adhesive and cured at room temperature for 3 hours. Finally, the pins are tinned using an acidic tinning solution at 260°C for 2 minutes, with a thickness of 5-8 microns. After tinning, the pins are cut and shaped using high-precision cutting equipment, with a cutting accuracy of ±0.03 mm.

[0107] Test Example 2 The test was carried out at an ambient temperature of 25°C and a relative humidity of 40%-60% to simulate a regular indoor working environment.

[0108] The packaged chips from Example 2 and Comparative Example 2 were installed on a test platform simulating the operating environment of a 5G base station, and the chip temperature was continuously monitored while operating at full load. After 30 minutes of operation, the chip temperature in Example 2 stabilized at around 60°C, within the normal operating temperature range. Signal transmission quality was stable, and the bit error rate was below the standard requirement. The chip temperature in Comparative Example 2 quickly rose to 70°C, reaching the upper limit of the normal operating temperature range. The signal bit error rate increased, affecting communication quality.

[0109] It can be clearly seen from the results of Test Example 1 and Test Example 2 that the heat dissipation packaging technology suitable for high-performance chips provided by the present invention can significantly reduce the temperature of the chip during operation, effectively improve the heat dissipation performance of the chip, ensure the stability and reliability of the chip under high-load operation, and meet the heat dissipation needs of high-performance chips in different application scenarios.

[0110] Although the present invention has been described in detail with reference to the accompanying drawings and in conjunction with preferred embodiments, the present invention is not limited thereto. Without departing from the spirit and essence of the present invention, persons of ordinary skill in the art may make various equivalent modifications or substitutions to the embodiments of the present invention, and such modifications or substitutions shall be within the scope of the present invention. Any changes or substitutions that can be easily conceived by persons skilled in the art within the technical scope disclosed in the present invention shall be within the scope of protection of the present invention.

Claims

1. A high-performance chip heat dissipation package, comprising a chip body, the chip body being located between a package substrate and a cover, characterized in that: The package substrate is made of a ceramic material or a resin material with a high thermal conductivity powder dispersed therein, wherein the high thermal conductivity powder is selected from one of graphene oxide and high thermal conductivity metal powder, and the high thermal conductivity metal powder includes aluminum powder and / or copper powder; The cover is made of a ceramic material or a resin material with high thermal conductivity powder dispersed inside. The high thermal conductivity powder is selected from one of graphene oxide and high thermal conductivity metal powder. The high thermal conductivity metal powder includes aluminum powder and / or copper powder. The basic material of the package substrate and the cover is the same.

2. A high-performance chip heat dissipation package according to claim 1, characterized in that: Based on the mass of the packaging substrate or the cover, the amount of high thermal conductivity powder added to the packaging substrate or the cover is 0.1wt%-3wt%.

3. A high-performance chip heat dissipation package according to claim 1, characterized in that: A heat dissipation layer is provided on at least one surface of the packaging substrate and / or the cover.

4. A high-performance chip heat dissipation package according to claim 1, characterized in that: The heat dissipation layer is a graphene oxide heat dissipation layer or a high thermal conductivity metal heat dissipation layer.

5. A high-performance chip heat dissipation package according to claim 3 or 4, characterized in that: The thickness of the heat dissipation layer is between 10 microns and 500 microns.

6. A processing technology for high-performance chip heat dissipation package according to any one of claims 1 to 5, characterized in that: Includes S1, preparation of heat dissipation package and S2, assembly of package structure; Among them, S1, the preparation of the heat dissipation package at least includes the steps of evenly mixing high thermal conductivity powder with ceramic material or resin material, and then processing and molding to obtain a packaging substrate and a cover, wherein the particle size of the high thermal conductivity powder is between 5 nanometers and 3000 nanometers.

7. The processing technology according to claim 6, characterized in that The specific steps include: S1. Preparation of heat dissipation package S11, uniformly dispersing the high thermal conductivity powder in the ceramic material by stirring, ultrasonication and ball milling in sequence; S12, vacuum exhausting the mixed material, and then tape casting to obtain a green body of a desired shape; S13, drying and degreasing the green body, and finally sintering to obtain a packaging substrate and a cover; S2. Assembly of packaging structure The chips are assembled and the pins are tinned and cut into shape.

8. The processing technology according to claim 7, characterized in that: The process also includes S14, processing a heat dissipation layer on the surface of the packaging substrate and / or the cover.

9. The processing technology according to claim 6, characterized in that The specific steps include: S1. Preparation of heat dissipation package S11, mixing the high thermal conductivity powder and the resin material and adding them into a twin-screw extruder, mixing them through a melt reaction, and then performing molding, and demolding to obtain a semi-finished product of a packaging substrate and a cover; S12, baking and hardening the semi-finished product of the packaging substrate and the cover; S2. Assembly of packaging structure The chips are assembled and the pins are tinned and cut into shape.

10. The processing technology according to claim 9, characterized in that: Between S11 and S12 , a heat dissipation layer is processed on the surface of the packaging substrate and / or the cover.

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