Preparation method of anomalous quantum Hall resistor, anomalous quantum Hall resistor and measuring device

Abstract

The invention discloses a preparation method of an anomalous quantum Hall resistor, the anomalous quantum Hall resistor and a measuring device, relates to the technical field of electronic information, and solves the problem that the time cost and the economic cost consumed for preparing the anomalous quantum Hall resistor are relatively high. According to the method, the thickness of each layer in the anomalous quantum Hall resistor is used as a factor parameter of an orthogonal experiment, and a horizontal value of each factor parameter is constructed based on a preset initial value and a preset variation amplitude; and generating an orthogonal experiment table based on the factor parameters and the level values, calculating the optimal values of the factor parameters through an orthogonal experiment, and preparing the anomalous quantum Hall resistor based on the optimal values. The optimal value of the factor parameter is calculated through the orthogonal experiment, so that the processing times of the abnormal quantum Hall resistor can be reduced, and the better size parameter of the abnormal quantum Hall resistor can be obtained under the condition of less preparation times of the orthogonal experiment; the anomalous quantum Hall resistor is prepared based on the size parameter, so that the time cost and the economic cost can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of electronic information technology, and in particular to a preparation method of an anomalous quantum Hall resistor, an anomalous quantum Hall resistor and a measuring device. Background Art

[0002] The quantum anomalous Hall effect (QAHE) is a quantum phenomenon observed in topological insulators. Its core characteristic is the appearance of quantized Hall resistance in zero magnetic field. This effect was first experimentally demonstrated in 2013, marking a major breakthrough in condensed matter physics. While the traditional Hall effect requires an external magnetic field to produce quantized Hall resistance, the QAHE exploits the topological properties of the material itself, eliminating the need for an external magnetic field.

[0003] Resistors based on the quantum anomalous Hall effect are called anomalous quantum Hall resistors. The key lies in the nontrivial topological properties of the electronic band structure in the resistor material, which leads to the emergence of chiral conduction channels in the edge states, thus generating a quantized Hall resistance. Materials that achieve the QAHE are typically magnetically doped topological insulators, such as chromium-doped (Bi,Sb)2Te3 thin films. By precisely controlling the doping concentration and film thickness, these materials can achieve a quantum anomalous Hall effect of approximately 25.8 kΩ at low temperatures.

[0004] However, in actual processing, the ideal anomalous quantum Hall resistance (i.e., quantized Hall resistance) is not easy to achieve. It may be affected by factors such as material impurities, defects, temperature, and measurement accuracy, resulting in the resistance of the prepared anomalous quantum Hall resistance being lower than the quantized Hall resistance. Because current computer simulation software has difficulty simulating quantum fields, multiple production processes are required to obtain an anomalous quantum Hall resistance close to the quantized Hall resistance, which requires a lot of time and financial costs.

[0005] In view of this, a preparation method of an anomalous quantum Hall resistor, an anomalous quantum Hall resistor and a measuring device are needed. Summary of the Invention

[0006] To address the high time and economic costs associated with preparing anomalous quantum Hall resistors in the prior art, the present invention provides a method for preparing an anomalous quantum Hall resistor, an anomalous quantum Hall resistor, and a measuring device, which can reduce the number of production processes required to prepare the anomalous quantum Hall resistor, thereby reducing both time and economic costs. The specific technical solution is as follows:

[0007] A method for preparing an anomalous quantum Hall resistor, the method comprising:

[0008] Obtain factor parameters of the orthogonal experiment, which include the thickness of the top gate control layer, the thickness of the covering layer, the thickness of the magnetic layer, the thickness of the insulator film, and the thickness of the substrate of the target anomalous quantum Hall resistor; the factor parameters include the initial value and the variation range of each corresponding thickness; generate an orthogonal experiment table based on the factor parameters and the level value corresponding to the factor parameter; wherein the level value is obtained based on the initial value and the variation range, and the level value is a possible value of the thickness in the corresponding factor parameter; measure the resistance value of the experimental anomalous quantum Hall resistor, which is the anomalous quantum Hall resistor prepared based on the factor parameters corresponding to the orthogonal experiment in the orthogonal experiment table; calculate the optimal value of the factor parameter based on the resistance value; and prepare the target anomalous quantum Hall resistor based on the optimal value.

[0009] Preferably, calculating the optimal value of the factor parameter based on the resistance value includes: calculating a performance index of the factor parameter based on the resistance value, the performance index being used to indicate the influence of the factor parameter on the resistance value of the experimental anomalous quantum Hall resistor at different levels; and the calculation formula for calculating the performance index includes:

[0010]

[0011] Among them, P ij represents the j-th level value of the i-th factor parameter, Indicates P ij performance indicators, Indicates that based on P ij The resistance value of the nth experimental anomalous quantum Hall resistor prepared, N is based on P ij The number of experimental anomalous quantum Hall resistors prepared is determined; and the maximum level value of the performance index is determined to be the optimal value of the corresponding factor parameter.

[0012] Preferably, the optimal value includes the first thickness of the top gate control layer, the second thickness of the covering layer, the third thickness of the magnetic layer, the fourth thickness of the insulator film and the fifth thickness of the substrate; based on the optimal value, preparing the target anomalous quantum Hall resistance includes: based on the first thickness, the second thickness, the third thickness, the fourth thickness and the fifth thickness, sequentially growing the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the covering layer and the top gate control layer to obtain the target anomalous quantum Hall resistance; wherein the sum of the thickness of the first magnetic layer and the thickness of the second magnetic layer is equal to the third thickness.

[0013] Preferably, the lengths of the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the cover layer and the top gate control layer are not completely the same.

[0014] Preferably, the length of the insulator film is longer than the length of the first magnetic layer and the length of the second magnetic layer, the length of the second magnetic layer is longer than the length of the covering layer, the length of the covering layer is longer than the length of the top gate control layer, and the length of the first magnetic layer is longer than the length of the substrate.

[0015] Preferably, the first ends of the six layers, namely the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the covering layer and the top gate control layer, are grown in an aligned manner, and the first end is one of the two ends of the target anomalous quantum Hall resistance in the length direction.

[0016] Preferably, the thickness of the first magnetic layer and the thickness of the second magnetic layer are both 1 / 2 of the third thickness.

[0017] Preferably, the level value includes the sum of the initial value and the corresponding change amplitude, the initial value, and the difference between the initial value and the corresponding change amplitude; the orthogonal experiment table includes 18 orthogonal experiments.

[0018] In a second aspect, an embodiment of the present application provides an anomalous quantum Hall resistor, which is prepared based on the method described in the first aspect.

[0019] In a third aspect, an embodiment of the present application provides a device for measuring an anomalous quantum Hall resistor, the device comprising a current source and a copper electrode, the copper electrode being used to contact the anomalous quantum Hall resistor prepared based on the method described in the first aspect and to provide a current path between the anomalous quantum Hall resistor and the current source; the shape of the copper electrode being adapted to the shape of the anomalous quantum Hall resistor.

[0020] Compared with the prior art, the present invention has the following advantages: by using the thickness of each layer in the anomalous quantum Hall resistor as a factor parameter in the orthogonal experiment, and constructing the level value of each factor parameter based on a preset initial value and variation range; then generating an orthogonal experiment table based on the factor parameter and the level value, calculating the optimal value of the factor parameter through the orthogonal experiment, and then preparing the anomalous quantum Hall resistor based on the optimal value. Calculating the optimal value of the factor parameter through the orthogonal experiment can reduce the number of processing times of the anomalous quantum Hall resistor, and obtain better dimensional parameters of the anomalous quantum Hall resistor with fewer orthogonal experiment preparations, thereby reducing the time and economic costs of preparing the anomalous quantum Hall resistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly describes the drawings required for the specific embodiments or the description of the prior art. Similar elements or parts are generally identified by similar reference numerals throughout the drawings. Elements or parts in the drawings are not necessarily drawn to scale.

[0022] Figure 1 A schematic flow chart of a method for preparing an anomalous quantum Hall resistor provided in an embodiment of the present application;

[0023] Figure 2 A schematic front view of the structure of an anomalous quantum Hall resistor provided in an embodiment of the present application;

[0024] Figure 3 A schematic diagram of the structure of the connection between an anomalous quantum Hall resistor and a copper plate provided in an embodiment of the present application. DETAILED DESCRIPTION

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0026] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0027] It should also be understood that the terms used in the present specification are only for the purpose of describing particular embodiments and are not intended to limit the present invention. As used in the present specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0028] It should be further understood that the term "and / or" used in the present description and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0029] In order to solve the problem of high time and economic costs in preparing anomalous quantum Hall resistors in traditional solutions, the present invention provides a preparation method of an anomalous quantum Hall resistor, an anomalous quantum Hall resistor and a measuring device, which can reduce the number of production processes for preparing an anomalous quantum Hall resistor and reduce time and economic costs.

[0030] See also Figure 1 , Figure 1 A schematic flow chart of a method for preparing an anomalous quantum Hall resistor provided in an embodiment of the present application, wherein the method is applied to a computing device connected to a device or system for preparing an anomalous quantum Hall resistor; Figure 1 As shown, the method includes the following steps:

[0031] Step 101: A computing device obtains factor parameters of an orthogonal experiment.

[0032] In the quantum anomalous Hall effect, the quantized Hall resistance of the anomalous quantum Hall resistor is theoretically independent of the material's layer thickness. However, its ability to stably exhibit this quantized Hall resistance is highly dependent on the layer thickness of the layered structure. Specifically, if the material is too thin, quantum size effects may cause changes in the band structure, destroying topological surface states or magnetic order. If the material is too thick, bulk conduction may be introduced, forming parallel channels with edge states and reducing the measured Hall resistance.

[0033] Furthermore, the thickness of the layered structure of the anomalous quantum Hall resistor affects the growth quality and bulk conductivity of the insulator film, which in turn affects the overall anomalous quantum Hall resistor value. Therefore, by optimizing the layered thickness of the anomalous quantum Hall resistor, the resistance of the anomalous quantum Hall resistor can be made closer to the quantized Hall resistor.

[0034] It is understandable that the anomalous quantum Hall resistance is affected by factors such as material impurities, defects, temperature, and measurement accuracy, and its resistance is usually smaller than the quantized Hall resistance. Therefore, maximizing the resistance of the anomalous quantum Hall resistance can be set as the optimization goal.

[0035] The anomalous quantum Hall resistor consists of five layers: a top gate control layer, a capping layer, a magnetic layer, an insulator film, and a substrate. The computing device can set the thickness of these five layers as the target variables to be optimized, and maximizing the resistance of the anomalous quantum Hall resistor as the optimization goal.

[0036] Among them, the embodiment of the present application adopts the orthogonal experimental method for calculation. The orthogonal experimental method can retain the characteristics of key information while compressing the number of experiments, so as to obtain the size parameters of the anomalous quantum Hall resistor with better performance under fewer orthogonal experimental preparation times, that is, the layer thickness of the layered structure of the anomalous quantum Hall resistor.

[0037] Therefore, the thicknesses of these five layers can be set as factor parameters for the orthogonal experiment. Specifically, these factor parameters include the thickness of the top gate control layer of the target anomalous quantum Hall resistor, the thickness of the cap layer, the thickness of the magnetic layer, the thickness of the insulator film, and the thickness of the substrate. It can be understood that the target anomalous quantum Hall resistor is the anomalous quantum Hall resistor prepared based on the ultimately obtained optimal layer thickness.

[0038] The factor parameters include the initial value and variation range of each corresponding thickness. Specifically, the initial value and variation range can be determined based on experimental data or based on the layer thickness of the layered structure of anomalous quantum Hall resistor products currently on the market. For example, the computing device can obtain the mean, maximum, and minimum thickness of each layer in the layered structure of anomalous quantum Hall resistor products currently on the market; then use the mean as the initial value; and determine the variation range based on the difference between the maximum and minimum values ​​and the number of levels preset in the orthogonal experiment.

[0039] For example, in the case where the five layer thicknesses are used as factor parameters, the initial value is set to oi, the variation range is △i, and i is the layer number in the layered structure, corresponding to the five layers; based on the factor parameter, the initial value, and the variation range, three sets of level values ​​can be generated: oi-△i, oi, and oi+△i, as shown in Table 1 below:

[0040] Factor parameter 1 Factor parameter 2 Factor parameter 3 Factor parameter 4 Factor parameter 5 Level 1 o1-△1 o2-△2 o3-△3 o4-△4 o5-△5 Level 2 o1 o2 o3 o4 o5 Level 3 o1+△1 o2+△2 o3+△3 o4+△4 o5+△5

[0041] Table 1 Factor parameters and level values ​​of orthogonal experiment

[0042] Step 102: The computing device generates an orthogonal experiment table based on the factor parameters and the level values ​​corresponding to the factor parameters.

[0043] The level value is obtained based on the initial value and the variation range, and the level value corresponds to a possible value of the factor parameter. For example, if the initial value is 5nm and the variation range is 1nm, the level value can be 5±q*1nm, where q is an integer greater than or equal to 1 and less than 5.

[0044] Among them, the orthogonal array is in the form of L n (m k ), n is the number of experiments, m is the number of levels of each factor parameter, and k is the maximum number of factors that can be arranged. For 5 three-level factors, you need to choose an orthogonal array that can accommodate at least 5 columns, and each column corresponds to a three-level value. Commonly used three-level orthogonal arrays include L9(3 4 ), L 18 (3 7 ) and L 27 (3 13 ).

[0045] The construction of an orthogonal array must adhere to the principle of balanced matching. Specifically, each level of each factor parameter should be evenly distributed across the different levels of other factor parameters, and any two-column level combination should appear the same number of times across all experiments. This balance ensures the orthogonality of the experimental data, allowing the effects of each factor parameter to be analyzed independently.

[0046] The degrees of freedom of an orthogonal array refers to the number of factor parameters or level combinations that can be changed independently in an orthogonal experimental design. The degrees of freedom are the key basis for selecting an orthogonal array; the total degrees of freedom of an orthogonal array is n-1, and the degrees of freedom of each factor parameter is m-1. 18 (3 7 ) has many more degrees of freedom (17) than the requirement for 3 levels of 5 factor parameters (5*(3-1)=10), so it can fully cover all main effects and make it possible to analyze some interactions or errors.

[0047] Preferably, the level value includes the sum of the initial value and the corresponding change amplitude, the initial value, and the difference between the initial value and the corresponding change amplitude; the orthogonal experiment table includes 18 orthogonal experiments.

[0048] The orthogonal experiment table can be shown in Table 2 below:

[0049] Factor parameter 1 Factor parameter 2 Factor parameter 3 Factor parameter 4 Factor parameter 5 Orthogonal experiment 1 Level 1 Level 1 Level 1 Level 1 Level 1 Orthogonal experiment 2 Level 1 Level 2 Level 2 Level 2 Level 2 Orthogonal experiment 3 Level 1 Level 3 Level 3 Level 3 Level 3 Orthogonal experiment 4 Level 2 Level 1 Level 1 Level 2 Level 2 Orthogonal experiment 5 Level 2 Level 2 Level 2 Level 3 Level 3 Orthogonal experiment 6 Level 2 Level 3 Level 3 Level 1 Level 1 Orthogonal experiment 7 Level 3 Level 1 Level 2 Level 1 Level 3 Orthogonal experiment 8 Level 3 Level 2 Level 3 Level 2 Level 1 Orthogonal experiment 9 Level 3 Level 3 Level 1 Level 3 Level 2 Orthogonal experiment 10 Level 1 Level 1 Level 3 Level 3 Level 2 Orthogonal experiment 11 Level 1 Level 2 Level 1 Level 1 Level 3 Orthogonal experiment 12 Level 1 Level 3 Level 2 Level 2 Level 1 Orthogonal experiment 13 Level 2 Level 1 Level 2 Level 3 Level 1 Orthogonal experiment 14 Level 2 Level 2 Level 3 Level 1 Level 2 Orthogonal experiment 15 Level 2 Level 3 Level 1 Level 2 Level 3 Orthogonal experiment 16 Level 3 Level 1 Level 3 Level 2 Level 3 Orthogonal experiment 17 Level 3 Level 2 Level 1 Level 3 Level 1 Orthogonal experiment 18 Level 3 Level 3 Level 2 Level 1 Level 2

[0050] Table 2 Orthogonal experiment table

[0051] Step 103: The computing device measures the resistance value of the experimental anomalous quantum Hall resistance.

[0052] After obtaining the orthogonal experiment table, the computing device can prepare an experimental anomalous quantum Hall resistor according to the factor parameters and level values ​​of each orthogonal experiment in the orthogonal experiment table, and then test the resistance value of the experimental anomalous quantum Hall resistor.

[0053] Specifically, the computing device can prepare the experimental anomalous quantum Hall resistor according to the level value combination indicated by the factor parameters corresponding to the orthogonal experiment in the orthogonal experiment table.

[0054] It can be understood that the computing device is communicatively connected to a preparation device or system capable of preparing an anomalous quantum Hall resistor, and is communicatively connected to a measuring device or system capable of measuring the resistance value of the anomalous quantum Hall resistor, and then instructs the preparation device or system to prepare the experimental anomalous quantum Hall resistor; and then instructs the measuring device or system to measure the resistance value of the experimental anomalous quantum Hall resistor.

[0055] For example, corresponding to Table 2, after measuring the resistance value of the experimental anomalous quantum Hall resistance, the computing device can obtain the following Table 3.

[0056]

[0057] Table 3 Resistance values ​​of experimental anomalous quantum Hall resistance

[0058] Step 104: The calculation device calculates the optimal value of the factor parameter based on the resistance value.

[0059] Preferably, the computing device can calculate a performance index of the factor parameter based on the resistance value, and the performance index is used to indicate the influence of the factor parameter on the resistance value of the experimental anomalous quantum Hall resistor; more specifically, the performance index is used to indicate the influence of the factor parameter on the resistance value of the experimental anomalous quantum Hall resistor at different levels.

[0060] The calculation formula for calculating this performance indicator includes:

[0061]

[0062] Among them, P ij represents the i-th factor parameter and the j-th level value, Indicates P ij performance indicators, Indicates that based on P ij The resistance value of the nth experimental anomalous quantum Hall resistor prepared, N is based on P ij The number of experimental anomalous quantum Hall resistors prepared is determined; and the maximum level value of the performance index is determined to be the optimal value of the corresponding factor parameter.

[0063] For example, corresponding to Table 2 and Table 3 above, after the computing device calculates the performance indicators of each factor value, the following Table 4 can be obtained.

[0064]

[0065]

[0066] Table 4 Performance index maximum value selection table

[0067] Then, the optimal values ​​can be obtained as shown in Table 5 below.

[0068]

[0069] Table 5 Optimal value selection table

[0070] As shown in Table 5 above, the computing device can be based on the factor parameter P x Maximum performance index Determine the optimal value P of the factor parameter x,best .

[0071] Step 105: The computing device prepares the target anomalous quantum Hall resistance based on the optimal value.

[0072] In which, the optimal value includes the first thickness of the top gate control layer, the second thickness of the covering layer, the third thickness of the magnetic layer, the fourth thickness of the insulator film and the fifth thickness of the substrate; the computing device can control the preparation equipment or system connected to it to grow the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the covering layer and the top gate control layer in sequence based on the first thickness, the second thickness, the third thickness, the fourth thickness and the fifth thickness to obtain the target anomalous quantum Hall resistance.

[0073] The sum of the thickness of the first magnetic layer and the thickness of the second magnetic layer is equal to the third thickness. Preferably, the thickness of the first magnetic layer and the thickness of the second magnetic layer are both 1 / 2 of the third thickness.

[0074] See also Figure 2 , Figure 2 A schematic front view of the structure of an anomalous quantum Hall resistor provided in an embodiment of the present application is shown in FIG. Figure 2 As shown, in a possible implementation, the lengths of the six layers, namely, the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the cover layer and the top gate control layer, are not completely the same.

[0075] By growing layered structures of different lengths, Figure 3 As shown, the contact area with the copper plate is increased, so that the contact between the copper plate and each level of the anomalous quantum Hall resistor is better, making the measurement result more accurate.

[0076] Preferably, in step 103, the computing device controls the preparation device or system to prepare the experimental anomalous quantum Hall resistor with different layers of length, thereby increasing the contact area between the copper plate of the preparation device or system and the experimental anomalous quantum Hall resistor. The measured resistance value is more accurate and more conducive to obtaining the optimal solution.

[0077] Preferably, Figure 2 As shown, the length of the insulator film is longer than the length of the first magnetic layer and the length of the second magnetic layer, the length of the second magnetic layer is longer than the length of the covering layer, the length of the covering layer is longer than the length of the top gate control layer, and the length of the first magnetic layer is longer than the length of the substrate.

[0078] Preferably, Figure 2 As shown, the six layers, namely the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the cap layer and the top gate control layer, are grown aligned at the first ends of the two ends in the length direction.

[0079] It is understandable that the six layers, namely the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the covering layer and the top gate control layer, may not be aligned at both ends during growth to increase the contact area between the two ends and the copper plate.

[0080] Among them, the computing device can control the length of the structural layer when growing the structural layer of the target anomalous quantum Hall resistor through a preparation device or system; it can also obtain the target anomalous quantum Hall resistor with different lengths of each layer after preparing a layered structure with the same length through etching or other methods.

[0081] In an embodiment of the present application, the thickness of each layer in the anomalous quantum Hall resistor is used as a factor parameter in an orthogonal experiment, and the level value of each factor parameter is constructed based on a preset initial value and variation range. Then, an orthogonal experiment table is generated based on the factor parameter and the level value, and the optimal value of the factor parameter is calculated through the orthogonal experiment. Then, the anomalous quantum Hall resistor is prepared based on the optimal value. Calculating the optimal value of the factor parameter through the orthogonal experiment can reduce the number of processing times of the anomalous quantum Hall resistor, and obtain a better dimensional parameter of the anomalous quantum Hall resistor with a fewer number of orthogonal experiment preparations, which can reduce the time cost and economic cost of preparing the anomalous quantum Hall resistor.

[0082] The embodiment of the present application also provides an anomalous quantum Hall resistor, which is based on the following Figure 1 The method described in the examples was used to prepare it.

[0083] The embodiment of the present application also provides a device for measuring anomalous quantum Hall resistance, which includes a current source and a copper plate, wherein the copper plate is used to contact the anomalous quantum Hall resistance based on the current source. Figure 1 The anomalous quantum Hall resistor prepared by the method described in the embodiment provides a current path between the anomalous quantum Hall resistor and the current source; the shape of the copper plate is adapted to the shape of the anomalous quantum Hall resistor.

[0084] Those skilled in the art will appreciate that the units of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition of each example has been generally described in terms of function in the above description. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0085] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0086] In the several embodiments provided in the embodiments of the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0087] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0088] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing unit, each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0089] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, read-only memory (ROM), random access memory (RAM), mobile hard disk, magnetic disk or optical disk, and other media that can store program codes.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention, and they should all be included in the scope of the claims and description of the present invention.

Claims

1. A method for preparing an anomalous quantum Hall resistor, characterized in that: include: Obtaining factor parameters of the orthogonal experiment, wherein the factor parameters include the thickness of the top gate control layer of the target anomalous quantum Hall resistor, the thickness of the cover layer, the thickness of the magnetic layer, the thickness of the insulator film, and the thickness of the substrate; the factor parameters include the initial value and variation range of each corresponding thickness; Based on the factor parameters and the level values ​​corresponding to the factor parameters, an orthogonal experiment table is generated; wherein the level values ​​are obtained based on the initial values ​​and the variation range, and the level values ​​are possible values ​​of the corresponding factor parameters; Measuring the resistance value of an experimental anomalous quantum Hall resistor, where the experimental anomalous quantum Hall resistor is an anomalous quantum Hall resistor prepared based on the factor parameters corresponding to the orthogonal experiment in the orthogonal experiment table; calculating an optimal value of the factor parameter based on the resistance value; Based on the optimal value, the target anomalous quantum Hall resistance is prepared.

2. The method according to claim 1, characterized in that Calculating the optimal value of the factor parameter based on the resistance value includes: Based on the resistance value, calculating a performance index of the factor parameter, wherein the performance index is used to indicate the influence of the factor parameter on the resistance value of the experimental anomalous quantum Hall resistor; The calculation formula for calculating the performance index includes: Among them, P ij represents the j-th level value of the i-th factor parameter, Indicates P ij performance indicators, Indicates that based on P ij The resistance value of the nth experimental anomalous quantum Hall resistor prepared, N is based on P ij The number of experimental anomalous quantum Hall resistors prepared; Determine the maximum level value of the performance indicator as the optimal value corresponding to the factor parameter.

3. The method according to claim 1, characterized in that The optimal values ​​include a first thickness of the top gate control layer, a second thickness of the cap layer, a third thickness of the magnetic layer, a fourth thickness of the insulator film, and a fifth thickness of the substrate; The step of preparing the target anomalous quantum Hall resistance based on the optimal value comprises: Based on the first thickness, the second thickness, the third thickness, the fourth thickness and the fifth thickness, sequentially growing the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the capping layer and the top gate control layer to obtain the target anomalous quantum Hall resistance; The sum of the thickness of the first magnetic layer and the thickness of the second magnetic layer is equal to the third thickness.

4. The method according to claim 3, characterized in that The lengths of the substrate, the first magnetic layer, the insulator film, the second magnetic layer, the capping layer, and the top gate regulating layer are not completely the same.

5. The method according to claim 4, characterized in that The length of the insulator film is longer than the length of the first magnetic layer and the length of the second magnetic layer, the length of the second magnetic layer is longer than the length of the covering layer, the length of the covering layer is longer than the length of the top gate control layer, and the length of the first magnetic layer is longer than the length of the substrate.

6. The method according to claim 5, characterized in that The six layers, namely, the substrate, the first magnetic layer, the insulator thin film, the second magnetic layer, the cap layer and the top gate regulating layer, are grown aligned at first ends of both ends in the length direction.

7. The method according to any one of claims 3 to 6, characterized in that: The thickness of the first magnetic layer and the thickness of the second magnetic layer are both 1 / 2 of the third thickness.

8. The method according to any one of claims 1 to 6, characterized in that: The level value includes the sum of the initial value and the corresponding change amplitude, the initial value, and the difference between the initial value and the corresponding change amplitude; the orthogonal experiment table includes 18 orthogonal experiments.

9. An anomalous quantum Hall resistor, characterized in that: The anomalous quantum Hall resistor is prepared based on the method according to any one of claims 1 to 8.

10. A device for measuring anomalous quantum Hall resistance, characterized in that: The device includes a current source and a copper electrode plate, wherein the copper electrode plate is used to contact the anomalous quantum Hall resistor prepared by the method according to any one of claims 1 to 8 and provide a current path between the anomalous quantum Hall resistor and the current source; the shape of the copper electrode plate is adapted to the shape of the anomalous quantum Hall resistor.

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