Sintered substrate, light-emitting device, and method for producing same

Abstract

A method for producing a sintered body substrate, the method comprising: a step for preparing a ceramic substrate (1) having a first surface (1A) and a second surface (1B) on the opposite side of the first surface, and having a through-hole (2) penetrating the first surface and the second surface so as to connect the first surface and the second surface; a conductive paste (3A) containing at least a metal powder (45A), a first active metal powder (6A1), and an organic solvent (7B) is disposed in the through-hole; disposing a second active metal powder (6A2) on the surface of the disposed conductive paste; and sintering the conductive paste in which the second active metal powder is disposed.

Description

Technical Field

[0001] The present disclosure relates to a sintered substrate, a light-emitting device, and a method for manufacturing the same. Background Art

[0002] Conventionally, active metal brazing filler metals have been used as through-hole materials or wiring in ceramic substrates with excellent high thermal conductivity, such as Si3N4 substrates.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: (Japan) Patent No. 5693940

[0006] Patent Document 2: (Japan) Patent No. 6541530 Summary of the Invention

[0007] Technical problem to be solved by the invention

[0008] However, in a ceramic substrate, unevenness is generated on the surface of the active metal brazing filler metal during sintering, making mounting difficult in some cases.

[0009] An object of the embodiments of the present disclosure is to provide a sintered substrate having good mountability, a light-emitting device, and a method for manufacturing the same.

[0010] Technical solutions to technical problems

[0011] The manufacturing method of the sintered substrate disclosed in the embodiment includes the following steps: preparing a ceramic substrate, which has a first surface and a second surface opposite to the first surface, and has a through hole that penetrates in a manner connecting the first surface and the second surface; disposing a conductive paste in the through hole, the conductive paste containing at least metal powder, a first active metal powder and an organic solvent; disposing a second active metal powder on the surface of the conductive paste; and sintering the conductive paste with the second active metal powder.

[0012] The manufacturing method of the light-emitting device disclosed in the embodiment includes the following steps: preparing a sintered substrate manufactured by the above-mentioned sintered substrate manufacturing method; configuring a light-emitting element having an element electrode on the sintered substrate, in the step of preparing the sintered substrate, the conductive paste configured in the through hole becomes a conductive part by sintering the conductive paste, and in the step of configuring the light-emitting element, the conductive part is electrically connected to the element electrode.

[0013] In addition, the sintered substrate disclosed in the embodiment includes: a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole that penetrates in a manner connecting the first surface and the second surface; a conductive portion, which is arranged in the through hole, the conductive portion includes a reaction layer of a metal and a metal compound arranged on the inner wall defining the through hole, and the surface side of the conductive portion includes a first metal layer and a second metal layer, and a high metal compound content layer between the first metal layer and the second metal layer, wherein the content of the metal compound is higher than that of the first metal layer and the second metal layer, and the second metal layer is arranged on the surface side of the conductive portion.

[0014] In addition, a sintered substrate disclosed in another embodiment includes: a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole that penetrates in a manner connecting the first surface and the second surface; a conductive portion, which is arranged in the through hole, the conductive portion includes a metal and a reaction layer of a metal compound arranged on the inner wall defining the through hole, a first metal layer is provided on the surface side of the conductive portion, and a high metal compound containing layer is provided on the first metal layer, the high metal compound containing layer having a higher content of the metal compound than the first metal layer, and the high metal compound containing layer is arranged on the surface side of the conductive portion.

[0015] Furthermore, the light-emitting device disclosed in the embodiment includes the above-mentioned sintered substrate and a light-emitting element having an element electrode, and the conductive portion of the sintered substrate is electrically connected to the element electrode.

[0016] Effects of the Invention

[0017] According to the embodiments of the present disclosure, it is possible to provide a sintered substrate having excellent mountability, a light-emitting device, and a method for manufacturing the same. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a plan view schematically showing a sintered substrate according to the embodiment.

[0019] Figure 2 yes Figure 1 A three-dimensional cross-sectional view taken along line II-II.

[0020] Figure 3A This is a cross-sectional photographic image showing an enlarged cross section of a portion of the conductive portion of the sintered substrate according to the embodiment.

[0021] Figure 3B This is a plan view schematically showing an enlarged portion of a conductive portion of a sintered substrate of an example.

[0022] Figure 3C As Figure 3BThis is a planar photographic image showing an enlarged portion of a conventional conductive portion for comparison.

[0023] Figure 3D As Figure 3A This is a cross-sectional photographic image showing an enlarged cross section of a portion of a conventional conductive portion for comparison.

[0024] Figure 4 This is a flowchart of a method for manufacturing a sintered substrate according to an exemplary embodiment.

[0025] Figure 5A This is a cross-sectional view schematically showing a ceramic substrate in the method for producing a sintered substrate according to the embodiment.

[0026] Figure 5B This is an end view schematically showing the state of a ceramic substrate in the method for producing a sintered substrate according to the embodiment.

[0027] Figure 5C This is an end view illustrating a state in which a conductive paste is prepared and arranged in a recess and a through-hole formed in a ceramic substrate in the method for manufacturing a sintered substrate according to the embodiment.

[0028] Figure 5D This is an end view schematically showing a state in which a conductive paste is arranged in a recess and a through-hole formed in a ceramic substrate in a method for manufacturing a sintered substrate according to an embodiment.

[0029] Figure 5E This is an end view schematically showing a state in which second active metal powder is arranged in a conductive paste in the method for producing a sintered substrate according to the embodiment.

[0030] Figure 5F This is an end view schematically showing a state in which the conductive paste is sintered in the method for manufacturing a sintered substrate according to the embodiment.

[0031] Figure 6 It is a cross-sectional view schematically showing a light emitting device according to an embodiment.

[0032] Figure 7 is a flowchart of a method for manufacturing a light emitting device according to an example embodiment.

[0033] Figure 8A This is a cross-sectional view illustrating a state in which a bonding member is arranged on a sintered substrate in a method for manufacturing a light emitting device according to an embodiment.

[0034] Figure 8B This is a cross-sectional view showing a state where light-emitting elements are arranged in a method for manufacturing a light-emitting device according to an embodiment.

[0035] Figure 8CThis is a cross-sectional view illustrating a state where a light reflecting member is disposed in a method for manufacturing a light emitting device according to an embodiment.

[0036] Figure 9 It is a cross-sectional view schematically showing a sintered substrate according to another embodiment.

[0037] Figure 10 This is a flowchart illustrating a method for manufacturing a sintered substrate according to another embodiment.

[0038] Figure 11A This is a cross-sectional view schematically showing a ceramic substrate in which a through-hole is formed in a method for producing a sintered substrate according to another embodiment.

[0039] Figure 11B This is a cross-sectional view schematically showing a state in which a first conductive paste is arranged in a through-hole in a method for manufacturing a sintered substrate according to another embodiment.

[0040] Figure 11C This is a cross-sectional view schematically showing a state in which a second conductive paste is arranged so as to be in contact with a first conductive paste in a method for manufacturing a sintered substrate according to another embodiment.

[0041] Figure 11D This is a cross-sectional view schematically showing a state in which second active metal powder is arranged in a second conductive paste in a method for manufacturing a sintered substrate according to another embodiment.

[0042] Figure 11E This is a cross-sectional view schematically showing a state after the first conductive paste and the second conductive paste are sintered in a method for manufacturing a sintered substrate according to another embodiment.

[0043] Figure 12 This is a cross-sectional view schematically showing a light-emitting device using a sintered substrate according to another embodiment. DETAILED DESCRIPTION

[0044] Hereinafter, the embodiments of the present disclosure will be described with reference to the accompanying drawings. However, the embodiments described below are used to concretize the technical ideas of the present disclosure, and the invention is not limited to the following contents unless otherwise specified. The contents described in one embodiment can also be applied to other embodiments and modifications. In addition, the accompanying drawings schematically represent the embodiments, and in order to clarify the description, the proportions, intervals, positional relationships, etc. of the components are sometimes exaggerated, or the illustration of a part of the components is omitted. The directions shown in each figure represent the relative positions between the constituent elements and are not intended to represent absolute positions. In addition, for the sake of convenience, when expressing as a cross section, there are also end faces, and vice versa. It should be noted that, regarding the same name and symbol, in principle, they represent the same or homogeneous components, and detailed descriptions are appropriately omitted. In addition, with respect to the embodiments, "covering" is not limited to direct contact, but also includes indirect coverage, such as via other components. In addition, "configuration" is not limited to direct contact, but also includes indirect configuration, such as via other components.

[0045] [Sintered substrate]

[0046] Reference Figures 1 to 3D The sintered substrate 10 of the embodiment will be described. Figure 1 It is a plan view schematically showing a sintered substrate according to the embodiment. Figure 2 yes Figure 1 A sectional perspective view taken along line II-II. Figure 3A This is a cross-sectional photographic image showing an enlarged cross section of a portion of the conductive portion of the sintered substrate according to the embodiment. Figure 3B This is a schematic top view showing a portion of the conductive portion of the sintered substrate of the embodiment in an enlarged manner. Figure 3C As Figure 3B A planar photographic image showing an enlarged portion of a conventional conductive portion for comparison. Figure 3D As Figure 3A This is a cross-sectional photographic image showing an enlarged cross section of a portion of a conventional conductive portion for comparison.

[0047] A sintered substrate 10 includes a ceramic substrate 1 having a first surface 1A and a second surface 1B opposite to the first surface 1A, and having a through-hole 2 extending therethrough to connect the first surface 1A and the second surface 1B; and a conductive portion 3 disposed within the through-hole 2. The conductive portion 3 includes a metal 45 and a reaction layer 6a of a metal compound 6 disposed on the inner wall defining the through-hole 2. Furthermore, a first metal layer 4 and a second metal layer 5 are disposed on the surface side of the conductive portion 3, and a high-metal compound content layer 6c having a higher metal compound 6 content than the first and second metal layers 4 and 5 is disposed between the first and second metal layers 4 and 5. The second metal layer 5 is disposed on the surface side of the conductive portion 3. Furthermore, a case will be described in which the ceramic substrate 1 includes a recess 9 in which the aperture diameter of at least one of the first surface 1A and the second surface 1B is larger than that of the through-hole 2 and is connected to the through-hole 2.

[0048] Hereinafter, each structure of the sintered substrate 10 will be described.

[0049] (Ceramic Substrate)

[0050] The ceramic substrate 1 is a plate-shaped component that serves as the basis of the sintered substrate 10. The top view shape of the ceramic substrate 1 is, for example, a rectangle. It should be noted that the top view shape of the ceramic substrate 1 is not particularly limited. For example, the ceramic substrate 1 preferably uses a substrate of sintered and solidified ceramics. As an example, the ceramic substrate 1 preferably contains at least one of silicon nitride, aluminum nitride, boron nitride, magnesium oxide and aluminum oxide. It should be noted that the ceramic substrate 1 can use nitride ceramics such as silicon nitride, aluminum nitride, and boron nitride, but can also use oxide ceramics such as aluminum oxide, silicon oxide, calcium oxide, and magnesium oxide. In addition, the ceramic substrate 1 can also use beryllium oxide, silicon carbide, mullite, borosilicate glass, etc.

[0051] The ceramic substrate 1 is provided with a through-hole 2 at a predetermined position in the plate thickness direction so as to connect the first surface 1A and the second surface 1B, and a conductive portion 3 is arranged inside the through-hole 2. In addition, the ceramic substrate 1 has a recess 9 having a larger hole diameter than the through-hole 2 and connected to the through-hole 2 on at least one of the first surface 1A and the second surface 1B. As an example, the through-hole 2 of the ceramic substrate 1 is arranged at a position within the recess 9 arranged on the first surface 1A and the second surface 1B. Here, the recess 9 includes a first recess 9a arranged on the first surface 1A and a second recess 9b arranged on the second surface 1B, and the through-hole 2 is arranged at the positions of the first recess 9a and the second recess 9b. The first recess 9a and the second recess 9b are arranged at positions opposite to each other and have an inner diameter larger than that of the through-hole 2. It should be noted that in the case of a rectangular through-hole 2 and the recess 9, the inner diameter, diameter, or radius is the length of its diagonal. The through hole 2 is arranged in the recess 9 of the portion that requires electrical conduction, and is arranged in the recess 9 of the portion that becomes the wiring pad arranged on the ceramic substrate 1. The wiring pad is the portion that becomes the electrode for configuring electronic components, etc. It should be noted that the recess 9 is preferably also arranged in the portion of the wiring connected to the wiring pad. By locating the recess 9 in the position where the wiring becomes, the close contact between the ceramic substrate 1 and the wiring can be improved. The through hole 2 is a portion that becomes a via hole for electrically connecting the element electrode 24 of the light-emitting element 20 to the wiring pad or wiring on the opposite side of the sintered substrate 10 via the conductive portion 3 arranged inside.

[0052] In the ceramic substrate 1, as an example, the diagram illustrates a case where one through-hole 2 is provided approximately in the center of each recess 9. Multiple through-holes 2 may be provided relative to each recess 9. While the through-holes 2 are shown as having the same diameter from one end to the other, the diameter may be larger on the opposite side than on the side connected to the element electrode. The opening shape of the through-hole 2 may be circular or polygonal when viewed from above. As long as it is a quadrilateral when viewed from above, it may also be a trapezoidal or parallelogram shape. Furthermore, it may be a triangle, pentagon, or hexagon. By making the opening shape of the through-hole 2 polygonal and aligning it with the shape of the light-emitting element electrode, electrical conductivity and heat dissipation can be improved. When the through-hole 2 has a polygonal opening shape, the corners of the opening are preferably rounded. By making the through-hole 2 have a polygonal opening shape, the area of ​​the opening continuous with the recess 9 can be increased. The maximum diameter (diameter or diagonal length) of the through-hole 2 is preferably 0.05 mm to 0.5 mm. If the through hole 2 is 0.05 mm or larger, it is easier to fill the conductive paste 3A before sintering, which can improve conductivity. On the other hand, if the through hole 2 is 0.5 mm or smaller, the strength can be maintained and the amount of conductive paste 3A can be reduced.

[0053] (Conductive part)

[0054] The conductive portion 3 is disposed within the through-hole 2, the recess 9, or both of the through-hole 2 and the recess 9 of the ceramic substrate 1. The conductive portion 3, alone or in conjunction with wiring, electrically connects to the light-emitting element 20. The conductive portion 3 comprises a first portion 13 disposed within the through-hole 2, and a second portion (wiring portion) 8, which contacts the first portion 13 and is disposed on at least one of the first surface 1A and the second surface 1B, with a portion exposed from the ceramic substrate 1. In the accompanying drawings, the second portion 8 is disposed on both the first surface 1A and the second surface 1B. The second portion 8 is disposed so that it protrudes from the surface of the ceramic substrate 1, respectively, from the first recess 9a of the first surface 1A and the second recess 9b of the second surface 1B. Increasing the thickness of the conductive portion 3 reduces resistance and improves conductivity. Furthermore, the second portion 8 may also function as wiring or a wiring pad.

[0055] As an example, the conductive portion 3 includes a metal 45 and a reaction layer 6a of a metal compound disposed on the inner wall defining the through-hole 2. On the surface side (the surface of the second portion) of the conductive portion 3, which serves as the end face, the first metal layer 4 is provided, extending from the interior of the conductive portion 3 toward the surface. A high-metal compound-containing layer 6c having a higher metal compound 6 content than the first metal layer 4 is provided on the first metal layer 4. A second metal layer 5 is provided on the high-metal compound-containing layer 6c. As an example, the second metal layer 5 is disposed on the surface side of the conductive portion 3. It should be noted that the conductive portion 3 may also be formed by grinding or polishing the second metal layer 5 and the high-metal compound-containing layer 6c so that the first metal layer 4 is located on the surface side of the conductive portion 3. Alternatively, the conductive portion 3 may be formed by grinding or polishing the second metal layer 5 so that the high-metal compound-containing layer 6c is located on the surface side of the conductive portion 3. By producing the sintered substrate 10 by the production method described below, the surface irregularities of the first metal layer 4 and the second metal layer 5 can be reduced, and the amount of polishing or grinding of the surfaces of the first metal layer 4 and the second metal layer 5 can be reduced.

[0056] The metal 45 is arranged so as to form the second metal layer 5, the high metal compound containing layer 6c, and the first metal layer 4 from the surface side of the conductive portion 3. Furthermore, the conductive portion 3 has a reaction layer 6a of the metal compound 6 arranged on the inner wall of the demarcated recess 9 and the through hole 2 of the ceramic substrate 1. In addition, the conductive portion 3 preferably contains a plurality of inorganic fillers 7 other than metal. Figure 3AAs shown, the first metal layer 4 is divided into a portion containing the inorganic filler 7 and a portion not containing the inorganic filler 7. The portion not containing the inorganic filler 7 is arranged separately from the high metal compound containing layer 6c. There is a first metal layer 4 not containing the inorganic filler 7 between the high metal compound containing layer 6c and the first metal layer 4 containing the inorganic filler 7. However, the boundary between these layers is not clear, and the thickness of the portion not containing the inorganic filler 7 also varies depending on the content of the inorganic filler 7. That is, as Figure 3A As shown, the metal 45 has regions above and below the high-metal compound content layer 6c where the inorganic filler 7 is absent. Furthermore, the first metal layer 4 containing the inorganic filler 7 has a layer in which the inorganic filler 7 is substantially uniformly dispersed. It should be noted that the reactant 6b of the metal compound 6 is disposed on the surface of the inorganic filler 7.

[0057] The metal 45 preferably includes at least one of Ag, Al, Zn, Sn, and an Ag-Cu alloy. Furthermore, the metal 45 may further include at least one of Cu, Cr, and Ni.

[0058] The arithmetic mean roughness Ra of the end surface of the conductive portion 3 (the surface of the second portion 8) exposed from the ceramic substrate is preferably 0.01 μm to 1.5 μm. The arithmetic mean roughness Ra of the end surface of the conductive portion 3 is more preferably 1.0 μm or less, even more preferably 0.5 μm or less, and most preferably 0.1 μm or less. By setting the arithmetic mean roughness Ra to 1.5 μm or less, the device electrode connected to the end surface of the conductive portion 3 (the surface of the second portion 8) can be stably bonded. The arithmetic mean roughness (Ra) of the end surface of the conductive portion 3 (the surface of the second portion 8) can be measured using a stylus-type measuring instrument using a stylus or a non-stylus-type measuring instrument using a laser, in accordance with the international standard ISO 25178 Surface Properties (Surface Roughness Measurement) (compliant with JIS B 0601).

[0059] In the conductive portion 3, the end surface having a surface roughness within the above range may be the surface of the first metal layer 4, the surface of the second metal layer 5, or the surface of the high-metal compound-containing layer 6c. When the first metal layer 4 is the end surface of the conductive portion 3, the second metal layer 5 and the high-metal compound-containing layer 6c are removed by grinding or polishing. Alternatively, when the high-metal compound-containing layer 6c is the end surface of the conductive portion 3, the surface of the second metal layer 5 is removed by grinding or polishing.

[0060] In addition, as an example, the conductive portion 3 includes a reaction layer 6a of a metal compound 6, a reactant 6b of the metal compound 6, and a high metal compound containing layer 6c as the metal compound 6. The metal compound 6 is an active metal powder 6A composed of a first active metal powder 6A1 and a second active metal powder 6A2 before sintering (see Figure 5C), preferably all contain at least one of TiH2, CeH2, ZrH2, and MgH2. After sintering, the metal compound 6 includes: a reaction layer 6a arranged on the inner wall of the demarcated recess 9 and the through-hole 2 of the ceramic substrate 1; a high metal compound content layer 6c having a high content of the metal compound 6; a reactant of the metal compound 6 arranged on the surface of the second metal layer 5; and, if the inorganic filler 7 is included, a reactant 6b arranged around the inorganic filler 7.

[0061] The metal compound 6 particularly preferably uses TiH2 (titanium hydride). By containing TiH2, it reacts with the nitrogen of the ceramic component of the ceramic substrate 1 when it contains nitrogen, forming a reaction layer 6a that serves as an active layer at the interface with the ceramic substrate 1, thereby improving the close adhesion between the conductive portion 3 and the ceramic substrate 1, and the conductive portion 3 can be firmly and tightly adhered to the inner wall of the through hole 2.

[0062] (Inorganic filler)

[0063] Inorganic filler 7 is dispersed within conductive portion 3 to reduce cracking. Pre-sintered inorganic filler 7A is, for example, a plurality of granular components other than metal. Examples of ceramic fillers include crystalline fillers such as alumina and silica, and amorphous fillers such as glass. Pre-sintered inorganic filler 7A contained in conductive portion 3 is contained in conductive paste 3A in an amount that does not interfere with the effects of other components.

[0064] (Organic solvent)

[0065] Organic solvent 7B (refer to Figure 5C ) is a component contained in the conductive paste 3A before sintering. The organic solvent 7B evaporates after sintering and becomes a state where it does not remain in the conductive portion 3. As an example, the organic solvent 7B may be a solvent or resin material commonly used as a through-hole material.

[0066] (Wiring section)

[0067] As an example, in Figure 1 and Figure 2 In the embodiment, the wiring portion is configured as the second portion 8 of the conductive portion 3. It should be noted that the wiring portion is configured as the second portion 8 of the conductive portion 3 on a predetermined wiring pattern of the ceramic substrate 1 to form a wiring pad or an external connection electrode. The wiring portion is configured as the second conductive paste 3A2 (see FIG. 1 ) before sintering. Figure 5D). The wiring portion, as the second portion 8 of the conductive portion 3, is arranged in a manner continuous with the first portion 13 of the conductive portion 3, and is arranged in respective recesses 9 on the first surface 1A side and the second surface 1B side of the ceramic substrate 1. The thickness of the second portion 8 as the wiring portion protruding from the surface of the ceramic substrate 1 is preferably, for example, not less than 12 μm and not more than 35 μm. It should be noted that, as an example, the wiring portion as the second portion 8 is shown as a rectangle in a plan view, but its shape and arrangement are arbitrary and not limited. The wiring portion may also be arranged in the recess 9 in a manner such that the second portion 8 becomes the same height as the surface of the ceramic substrate 1.

[0068] In addition, the second part 8 of the wiring portion may be the same part as the first part 13 of the conductive portion 3. As an example, in the second part 8 of the wiring portion, a copper foil or plating may be configured as a metal part as the bonding part 11. The material of the metal part used as the bonding part 11 may be, for example, a mixture of a single substance of gold, silver, copper, platinum, aluminum, or an alloy thereof, a mixed powder, and a resin adhesive using a resin. Furthermore, the bonding part 11 can use a tin-silver-copper (SAC) system or a tin-bismuth (SnBi) system solder. The resin used as the adhesive may be, for example, a thermosetting resin such as epoxy resin or silicone resin. In addition, the bonding part 11 preferably contains a reducing agent such as an organic acid. As a result, the oxidation of the bonding part 11 can be reduced, and the resistance value of the connection can be reduced.

[0069] In the sintered substrate 10 having the above-mentioned structure, the end surface of the conductive portion 3 is the first metal layer 4 or the second metal layer 5 or the high metal compound containing layer 6c, so that the end surface of the conductive portion 3 does not become Figure 3C In the stone wall state shown, the gap g is reduced, reduced, or eliminated, resulting in a flat surface. This improves contact with, for example, the element electrode 24 of the light-emitting element 20, thereby enhancing substrate reliability. Furthermore, in the sintered substrate 10, the metal compound reaction layer 6a is disposed on the inner walls of the demarcated recess 9 and through-hole 2 of the ceramic substrate 1, thereby increasing the connection strength of the conductive portion 3 and improving substrate reliability and other performance.

[0070] [Method for Manufacturing Sintered Substrate]

[0071] Next, refer to Figures 4 to 5F A method for producing a sintered substrate according to the embodiment will be described. Figure 4 This is a flowchart of a method for manufacturing a sintered substrate according to an exemplary embodiment. Figure 5A This is a cross-sectional view schematically showing a ceramic substrate in the method for producing a sintered substrate according to the embodiment. Figure 5B This is an end view schematically showing the state of a ceramic substrate in the method for producing a sintered substrate according to the embodiment. Figure 5CThis is an end view illustrating a state in which a conductive paste is prepared and arranged in a recess and a through-hole formed in a ceramic substrate in the method for manufacturing a sintered substrate according to the embodiment. Figure 5D This is an end view schematically showing a state where a conductive paste is arranged in recesses and through-holes on a ceramic substrate in a method for manufacturing a sintered substrate according to an embodiment. Figure 5E This is an end view schematically showing a state in which second active metal powder is arranged in a conductive paste in the method for producing a sintered substrate according to the embodiment. Figure 5F This is an end view schematically showing a state in which the conductive paste is sintered in the method for manufacturing a sintered substrate according to the embodiment.

[0072] The method S10 for manufacturing a sintered substrate includes the following steps: S11, preparing a ceramic substrate 1 having a first surface 1A and a second surface 1B opposite to first surface 1A, and having a through-hole 2 extending therethrough to connect first surface 1A and second surface 1B; S12, disposing a conductive paste 3A containing at least metal powder 45A, first active metal powder 6A1, and organic solvent 7B in through-hole 2; S13, disposing second active metal powder 6A2 on the surface of the disposed conductive paste 3A; and sintering the conductive paste 3A with the second active metal powder 6A2. Furthermore, in step S11 of preparing the ceramic substrate 1, a case where a recess 9 is disposed on at least one of the first surface 1A and the second surface 1B, and a through-hole 2 is provided at the location of the recess 9, will be described.

[0073] (Preparing a ceramic substrate)

[0074] Step S11 of preparing a ceramic substrate (hereinafter referred to as step S11) involves preparing a ceramic substrate having a through-hole 2 extending through the substrate to connect the first surface 1A and the second surface 1B, and sintering and solidifying the substrate. In step S11, a first recess 9a is formed in the prepared ceramic substrate 1 to have a diameter larger than the opening area of ​​the through-hole 2 on the first surface 1A, and a second recess 9b is formed in the prepared ceramic substrate 1 to have a diameter larger than the opening area of ​​the through-hole 2 on the second surface 1B. In other words, a substrate is prepared having the first recess 9a, the second recess 9b, and the through-hole 2 connecting the first recess 9a and the second recess 9b. In step S11, the first recess 9a, the second recess 9b, and the through-hole 2 are formed in the prepared ceramic substrate 1, for example, by laser processing, in which a laser is irradiated from the first surface 1A and the second surface 1B of the ceramic substrate 1. Note that the ceramic substrate 1 may be prepared with the through holes 2 formed thereon in a number corresponding to the size of the area for arranging the plurality of light emitting elements 20 and the number of element electrodes 24 , or may be cut into a size for arranging a predetermined number of light emitting elements 20 .

[0075] In addition, in step S11, the through hole 2 formed in the ceramic substrate 1 is formed into a polygonal shape when viewed from above. When cut in a vertical direction relative to the ceramic substrate 1, the through hole 2 is rectangular, and the through hole 2 has a certain width. It should be noted that the maximum diameter of the through hole 2 is preferably greater than or equal to 0.05 mm and less than or equal to 0.5 mm. Furthermore, the through hole 2 can also be formed so that the opening area on the second surface 1B side opposite to the side connected to the element electrode 24 of the light-emitting element 20 becomes larger. When the opening area of ​​the through hole 2 on the second surface 1B side is larger than that on the first surface 1A side, excellent heat dissipation is achieved.

[0076] (Configure conductive paste)

[0077] Step S12 of disposing the conductive paste (hereinafter referred to as step S12) involves disposing the conductive paste 3A in the through-holes 2 and recesses 9 formed in the ceramic substrate 1. In step S12, the conductive paste 3A is disposed in the through-holes 2 by, for example, applying the paste by screen printing or injecting the paste through a nozzle. It should be noted that, as an example, the conductive paste 3A is composed of the same member, including the portion disposed in the through-holes 2 that becomes the first portion 13 after sintering, and the portion that becomes the second portion 8 after sintering. For example, in the conductive paste 3A, the first conductive paste 3A1 that becomes the first portion 13 is disposed in the through-holes 2, while the second conductive paste 3A2 that becomes the second portion 8 is disposed so as to protrude from the surfaces of the first surface 1A and the second surface 1B of the ceramic substrate 1, using a mask or the like.

[0078] For the conductive paste 3A, it is preferable that the first conductive paste 3A1 that becomes the first portion 13 after sintering and the second conductive paste 3A2 that becomes the second portion 8 are alternately arranged by the same series of screen printing or the like. Figure 5C As shown, as an example, conductive paste 3A contains at least metal powder 45A, active metal powder 6A, and organic solvent 7B. As an example, conductive paste 3A contains 63% to 85% by mass of metal powder 45A, 1% to 15% by mass of first active metal powder 6A1 as active metal powder 6A, 5% to 15% by mass of organic solvent 7B as a solvent, and an acceptable range of mass % of inorganic filler 7A other than metal. It is noted that the first active metal powder 6A1 preferably contains 1 to 5 parts by weight of the first active metal powder 6A1, with the total weight of the other components being 100. The conductive paste 3A (first conductive paste 3A1 and second conductive paste 3A2) used in step S12 has fluidity due to the inclusion of organic solvent 7B, allowing it to be easily filled into through-holes 2 and recesses 9 of any shape. Furthermore, it can be applied to any shape and thickness and then cured to form a desired configuration.

[0079] In this step S12, the metal powder 45A may include at least one of Ag, Al, Zn, Sn, and Ag-Cu alloy powders. As an example, Ag-Cu alloy powders are used. Furthermore, the metal powder 45A preferably includes at least one of Cu, Cr, and Ni. As an example, Cu powder is used. The median particle size of the metal powder 45A is preferably greater than or equal to 1 μm and less than or equal to 50 μm. Furthermore, when the metal powder 45A is at least one of Cu, Cr, and Ni, its melting point is preferably greater than or equal to 200°C and less than or equal to 1000°C. Furthermore, in this step S12, when the metal powder 45A is at least one of Ag, Al, Zn, Sn, and Ag-Cu alloy powders, its melting point is preferably greater than or equal to 1050°C and less than or equal to 2500°C.

[0080] In step S12, the active metal powder 6A preferably contains at least one of TiH2, CeH2, ZrH2, and MgH2 as the first active metal powder 6A1. For example, TiH2 is used. Furthermore, as described above, the content of the first active metal powder 6A1 is preferably 1 part by weight or more and 5 parts by weight or less. By setting the content of the first active metal powder 6A1 to 1 part by weight or more, the reaction layer 6a, reactant 6b, and high-metal compound-containing layer 6c of the sintered metal compound 6 can be formed to the minimum necessary amount. Furthermore, when the content of the first active metal powder 6A1 is 5 parts by weight or less, the reaction layer 6a, reactant 6b, and high-metal compound-containing layer 6c of the sintered metal compound 6 can be formed inexpensively.

[0081] It should be noted that in step S12, when applying conductive paste 3A to through-hole 2, it is preferred that a mask be placed on first surface 1A, one surface of ceramic substrate 1, for example, in a portion other than first recess 9a, and conductive paste 3A be applied to through-hole 2 and first recess 9a using a squeegee, a tool used for screen printing. Furthermore, conductive paste 3A is applied to second recess 9b and through-hole 2 using a squeegee via a mask, similarly to first surface 1A, from second surface 1B, the other surface of ceramic substrate 1. After application of conductive paste 3A is completed, the masks applied to first surface 1A and second surface 1B of ceramic substrate 1 are removed.

[0082] Next, step S13 of placing the second active metal powder involves placing the second active metal powder 6A2 on the surface of the applied conductive paste (second conductive paste 3A2) 3A (hereinafter referred to as step S13). In step S13, the second active metal powder 6A2 is formed into a paste or liquid containing an organic solvent on the surface of the second conductive paste 3A2 exposed from the first and second surfaces 1A, 1B of the ceramic substrate 1. This paste is then printed or sprayed to place the second active metal powder 6A2. It should be noted that when placing the second active metal powder 6A2 on the surface of the second conductive paste 3A2, it is preferably pressed to embed it within the second conductive paste 3A2. The second active metal powder 6A2 is placed on the surface of the conductive paste 3A (the surface of the second conductive paste 3A2) in the areas that will become wiring or wiring pads through a mask, such as by screen printing, metal mask printing, or spraying. Note that the state when the second active metal powder 6A2 is in a liquid state is a state in which the organic solvent is contained and the second active metal powder 6A2 is dispersed and mixed in the organic solvent.

[0083] Next, the conductive paste is sintered in step S14 (hereinafter referred to as step S14). In step S14, a sintering furnace such as an electric furnace is used at a sintering temperature of 850°C or higher. It should be noted that in step S14, when the sintering operation is performed, the sintering environment is preferably an Ar atmosphere of 99.9% or higher or a 10 -5 A vacuum environment of less than Pa. Moreover, in this process S14, the sintering temperature is preferably above 850°C, more preferably above 900°C. By performing this process S14, the portion of the conductive paste 3A arranged on the ceramic substrate 1 is solidified in a state containing the second active metal powder 6A2. It should be noted that the ceramic substrate 1 has been sintered and solidified at the stage of process S11, rather than being sintered and solidified in this process S14. In addition, a process of drying the conductive paste 3A may be performed before performing process 14. The process of drying the conductive paste 3A is preferably performed in the atmosphere and in a range of 20°C to 60°C lower than the sintering temperature before sintering in an electric furnace.

[0084] The sintered substrate 10 can be manufactured by step S14. In the sintered substrate 10, the conductive paste 3A including the second active metal powder 6A2 is sintered, and the portion of the conductive portion 3 exposed from the ceramic substrate 1 (the second portion, the protruding portion) is formed. Figure 3A and Figure 3B As shown in FIG, it does not form a stone wall state, but becomes a smooth plane with few bumps or cracks. Figure 3C and Figure 3DAs shown, in the conventional conductive portion 300, the conductive portion is formed into a stone wall with gaps (multiple bubble-shaped holes) g. In contrast, in the sintered substrate 10, the second active metal powder 6A2 is placed on the surface of the second portion (protrusion) 8 of the conductive portion 3 and sintered, thereby forming the first metal layer 4, the high-metal compound content layer 6c of the metal compound 6, and the second metal layer 5, thereby flattening the surface of the conductive portion 3. As a result, in the sintered substrate 10, the bonding strength of the element electrode 24 and other components connected to the conductive portion 3 is improved. It should be noted that in the conductive portion 3, the reaction layer 6a of the metal compound 6 is formed on the inner surface of the through-hole 2. Furthermore, the reactant 6b of the metal compound 6 is located around the second metal layer 5 formed by sintering the second metal powder 5A. If the inorganic filler 7 is included, it is also located around the inorganic filler 7.

[0085] Therefore, the sintered substrate 10 improves the bonding strength between the inner wall of the through hole 2 and the recess 9 and the conductive portion 3 by means of the reaction layer 6c of the metal compound 6. It should be noted that, when the end face of the conductive portion 3 is the second metal layer 5, it is in a state of being sintered in step S14, and when the high metal compound containing layer 6c or the first metal layer 4 becomes the end face of the conductive portion 3, it is in a state of being ground or polished after step S14. Regardless of whether the first metal layer 4 becomes the end face of the conductive portion 3, the second metal layer 5 becomes the end face of the conductive portion 3, or the high metal compound containing layer 6c becomes the end face of the conductive portion 3, the end face of the conductive portion 3 is improved. Figure 3C As shown in the stone wall state, the gap g is reduced or becomes smaller or disappears, becoming Figure 3B A smooth surface without bumps or cracks as shown.

[0086] [Light-emitting device]

[0087] Next, refer to Figure 6 A light emitting device 100 according to an embodiment will be described. Figure 6 It is a cross-sectional view schematically showing a light emitting device according to an embodiment.

[0088] The light emitting device 100 emits light by disposing a light emitting element 20 on a sintered substrate 10 . The light emitting device 100 includes the sintered substrate 10 and the light emitting element 20 having an element electrode 24 . The conductive portion 3 of the sintered substrate 10 and the element electrode 24 are electrically connected.

[0089] The light-emitting device 100 includes the sintered substrate 10 described above and a light-emitting element 20 electrically connected to the second portion 8, serving as the wiring portion, of the conductive portion 3 of the sintered substrate 10. The light-emitting device 100 is described using, as an example, a configuration in which the light-reflecting member 30 covering the side surfaces of the light-emitting element 20 and the conductive portion 3 of the sintered substrate 10 is disposed. Furthermore, the light-emitting device 100 is described as a configuration in which the bonding member 11 is disposed on the conductive portion 3 of the sintered substrate 10 for electrical connection.

[0090] In light-emitting device 100, light-emitting element 20, a mounted component having element electrode 24, is disposed on sintered substrate 10. In light-emitting device 100, a plating layer serving as a bonding member 11 is disposed on second portion 8 of conductive portion 3, which is continuous with the first portion located within ceramic substrate 1 and protrudes from first and second surfaces 1A, 1B to form a wiring portion. In light-emitting device 100, second portion 8, a portion of conductive portion 3, protrudes from first and second surfaces 1A, 1B of ceramic substrate 1 to form a protrusion. Specifically, this protrusion serves as a wiring portion connected to element electrode 24, in this case, second portion 8 of conductive portion 3. This protrusion is plated. It should be noted that the surface of second portion 8, serving as the end face of conductive portion 3, is a smooth, flat surface with few irregularities or cracks. Therefore, when second portion 8 is plated as bonding member 11, the plated surface also remains smooth, flat, and free of irregularities or cracks. This facilitates bonding to element electrode 24, improving bonding strength.

[0091] (Light-emitting element)

[0092] The light emitting element 20 includes a pair of element electrodes 24 , a light-transmitting member 23 disposed on the light extraction surface side of the light emitting element 20 , an element substrate 22 , and a semiconductor stack 21 .

[0093] As an example, the light emitting element 20 includes a semiconductor stack 21 on an element substrate 22. In this embodiment, a light-transmitting member 23 is disposed on the upper surface side of the element substrate 22, which serves as a light extraction surface. The semiconductor stack 21 is disposed on the lower surface side of the element substrate 22, and a pair of element electrodes 24 are disposed on the side of the semiconductor stack 21. The semiconductor stack 21 can be of any composition depending on the desired emission wavelength. For example, a nitride semiconductor (Indium nitride) capable of emitting blue or green light can be used. X Al Y Ga 1-X-Y N, 0≤X, 0≤Y, X+Y≤1), GaP, or GaAlAs, AlInGaP, etc. that can emit red light. In addition, the size and shape of the light emitting element 20 can be appropriately selected according to the purpose of use.

[0094] As an example, a sapphire substrate, a silicon substrate, or a GaN substrate is used as the element substrate 22. The thickness of the element substrate 22 can be, for example, 20 μm to 2 mm, preferably 50 μm to 500 μm, and more preferably 80 μm to 160 μm. The element substrate 22 is arranged such that its lower surface faces the semiconductor stack 21 and its upper surface faces the translucent member 23. It should be noted that the element substrate 22 and the translucent member 23 are preferably bonded directly or via a bonding member.

[0095] The light-transmitting component 23 can be made of, for example, a light-transmitting resin material, glass, alumina, a phosphor, or other inorganic material. The light-transmitting component 23 can be made of epoxy resin, silicone resin, or a resin obtained by mixing them. The light-transmitting component 23 can contain a phosphor in the resin material or the inorganic material, or can be made of only a phosphor. The light-transmitting component 23 can emit white light by, for example, including a phosphor that absorbs blue light from the light-emitting element 20 and radiates yellow light. In addition, the light-transmitting component 23 can also include multiple phosphors. For example, by including a phosphor that absorbs blue light from the semiconductor stack 21 and radiates green light and a phosphor that radiates red light, white light can be emitted via the light-transmitting component 23 using the light from the light-emitting element 20.

[0096] As such a phosphor, for example, a yttrium-aluminum-garnet phosphor (for example, Y3(Al, Ga)5O 12 : Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al, Ga)5O 12 : Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al, Ga)5O 12 :Ce), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu), α-sialon phosphors (e.g., Mz(Si,Al) 12 (O, N) 16 (wherein 0<z≤2, M is a lanthanoid element other than Li, Mg, Ca, Y, La and Ce)), nitride-based phosphors such as CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr, Ca)AlSiN3:Eu), fluoride-based phosphors such as KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si, Al)F6:Mn) or MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), or quantum dot phosphors such as perovskite and chalcopyrite, etc.

[0097] The element electrode 24 is connected to the second portion 8 of the conductive portion 3, which serves as the wiring portion of the sintered substrate 10, via the metal bump 12 and / or the bonding member 11. One of the element electrodes 24 is a p-electrode, and is positioned at a distance from the other, an n-electrode, to prevent an electrical short circuit. As an example, the element electrode 24 is configured such that the p-electrode and the n-electrode are each positioned at one location. However, a configuration may also be employed such that one of the electrodes is positioned at two locations and the other is positioned at one location.

[0098] The metal bump 12 and / or the bonding member 11 electrically connect the element electrode 24 to the second portion 8 of the conductive portion 3 serving as the wiring portion. The metal bump 12 can be arranged on the element electrode 24 side or on the second portion 8 of the conductive portion 3 serving as the wiring portion. In addition, the shape, size, and number of the metal bumps 12 can be appropriately set as long as they can be arranged within the area of ​​the element electrode 24. In addition, the size of the metal bump 12 can be appropriately adjusted according to the size of the semiconductor stack, the required light output of the light-emitting element, etc., and for example, a size of about tens of μm to hundreds of μm in diameter can be cited.

[0099] The metal bumps 12 can be formed, for example, from Au, Ag, Cu, Al, Sn, Pt, Zn, Ni, or alloys thereof, and can be formed from pillar-shaped bumps known in the art. The pillar-shaped bumps can be formed using a pillar-shaped bump bonder, a wire bonding device, or the like. Alternatively, the metal bumps can be formed using methods known in the art, such as electroplating, electroless plating, vapor deposition, and sputtering.

[0100] Examples of the bonding member 11 include solders such as tin-bismuth, tin-copper, tin-silver, and gold-tin solders; eutectic alloys such as alloys primarily composed of Au and Sn, Au and Si, and Au and Ge; paste materials such as silver, gold, and palladium; anisotropic conductive materials such as ACP and ACF; solders made of low-melting-point metals; conductive adhesives and conductive composite adhesives formed by combining these. The bonding member 11 is applied, for example, by gold plating on the second portion 8 of the conductive portion 3, which serves as the wiring portion.

[0101] (Light reflecting parts)

[0102] The light-reflecting member 30 is a light-reflecting member. It is positioned to cover the upper surface of the sintered substrate 10 and the side surfaces of the light-emitting element 20. Furthermore, the light-reflecting member 30 is positioned so that the light extraction surface of the light-emitting element 20 is exposed and is flush with the translucent member 23 of the light-emitting element 20. As an example, the light-reflecting member 30 is also positioned between the lower surface of the light-emitting element 20 and the front surface (first surface) of the sintered substrate 10.

[0103] The light reflecting member 30 preferably has high reflectivity and is white in order to effectively utilize light from the light emitting element 20. The reflectivity of the light reflecting member 30 at the wavelength of light emitted by the light emitting element 20 is preferably 90% or more, more preferably 94% or more.

[0104] The light-reflecting member 30 can be made of a resin containing a light-diffusing material. Examples of resins used for the light-reflecting member include thermoplastic resins such as acrylic resins, polycarbonate resins, cyclic polyolefin resins, polyethylene terephthalate resins, polyethylene naphthalate resins, or polyester resins, or thermosetting resins such as epoxy resins or silicone resins. Furthermore, known materials such as titanium oxide, silicon oxide, aluminum oxide, zinc oxide, or glass can be used as the light-diffusing material.

[0105] As an example, sintered substrate 10 is connected to an external wiring substrate or the like. The external wiring substrate is electrically connected to second portion 8 of conductive portion 3, i.e., the wiring portion, disposed on second surface 1B of ceramic substrate 1 via bonding member 11. The external wiring substrate may be any substrate used in light-emitting device 100, and its structure is not particularly limited.

[0106] In the light-emitting device 100 having the above-described structure, the surface of the second portion 8 of the conductive portion 3, which protrudes from the first surface 1A and the second surface 1B of the conductive portion 3 in the sintered substrate 10, is a smooth plane without irregularities or cracks. This improves the bonding strength with the element electrode 24 and enhances the reliability of the device. Furthermore, in the light-emitting device 100, the connection between the element electrodes can be stabilized without increasing the amount of bonding member 11 forming the plating layer.

[0107] It should be noted that while the light-emitting device 100 uses a single light-emitting element 20 as a unit for brightness and on / off control, a single unit may include multiple light-emitting elements 20, with each light-emitting element 20 serving as an on / off control unit. The size and number of light-emitting elements 20 may be two or more. For example, light-emitting elements 20 of the same size may be arranged in one row and four columns, or four light-emitting elements 20 in two rows and two columns, or nine light-emitting elements 20 in three rows and three columns may be arranged in one unit. Furthermore, a structure in which light-emitting elements 20 of varying sizes are arranged in any configuration according to size may be used as a single unit.

[0108] [Method for manufacturing a light-emitting device]

[0109] Next, refer to Figure 8A to Figure 8C A method for manufacturing the light-emitting device according to the embodiment will be described. Figure 8A This is a cross-sectional view illustrating a state where a bonding member is arranged on a sintered substrate in a method for manufacturing a light emitting device according to an embodiment. Figure 8B This is a cross-sectional view showing a state where light-emitting elements are arranged in a method for manufacturing a light-emitting device according to an embodiment. Figure 8C This is a cross-sectional view illustrating a state where a light reflecting member is arranged in a method for manufacturing a light emitting device according to an embodiment.

[0110] The light-emitting device manufacturing method S20 includes: S21, preparing a sintered substrate manufactured by the previously described sintered substrate manufacturing method S10; and S22, placing a light-emitting element having an element electrode on the sintered substrate. Furthermore, in the sintered substrate preparation step S21, the conductive paste 3A filled in the through-hole 2 is sintered to form the conductive portion 3. In the light-emitting element placement step S22, the conductive portion 3 is electrically connected to the element electrode 24. It should be noted that after the light-emitting element placement step S22, as an example, the light-reflecting member 30 covering the side surfaces of the light-emitting element 20 and the sintered substrate 10 is placed in S23.

[0111] (Preparing a sintered substrate)

[0112] The step S21 of preparing a sintered substrate (hereinafter referred to as step S21) is to prepare the sintered substrate 10 manufactured by the sintered substrate manufacturing method S10 described above. In the sintered substrate 10, the surface of the second portion 8 of the conductive portion 3 that becomes the protrusion protruding from the first surface 1A and the second surface 1B is not formed. Figure 3C The stone wall state shown in the figure or the gap (multiple holes in the shape of bubbles) g is not formed, and becomes Figure 3B It should be noted that the sintered substrate 10 may be configured to have a size suitable for individual light-emitting devices 100 after arranging a plurality of regions for arranging the light-emitting elements 20 and arranging the light-reflecting member 30 described later.

[0113] (Configuration of light-emitting elements)

[0114] Step S22 (hereinafter referred to as step S22) of placing the light-emitting element involves placing the light-emitting element 20 on the sintered substrate 10. The light-emitting element 20 is placed with the translucent member 23 already connected to the element substrate 22. A translucent bonding material is used to bond the translucent member 23 to the element substrate 22. In step S22, the element electrode 24 of the light-emitting element 20 is connected via the bonding member 11 or metal bump 12, which is arranged on the second portion (wiring portion) 8 of the conductive portion 3, which serves as the wiring portion.

[0115] (With light reflective components)

[0116] Step S23 of disposing the light-reflecting member (hereinafter referred to as step S23) involves disposing the light-reflecting member 30 so as to cover the first surface 1A, which is the upper surface of the sintered substrate 10, and the side surfaces of the light-emitting elements 20. In step S23, the light-reflecting member 30 is disposed on the sintered substrate 10 so as to surround the light-emitting elements 20 and expose the upper surfaces of the translucent members 23, which serve as the light extraction surfaces of the light-emitting elements 20. The light-reflecting member 30 is disposed so as to have a rectangular shape when viewed from above.

[0117] It should be noted that in the light-emitting device manufacturing method S20, after step S23 is completed, singulation is performed as needed. The light-emitting device 100 is pre-set to a unit or unit based on the number of light-emitting elements 20 used. Therefore, when manufacturing multiple light-emitting devices 100 at once, singulation is performed. When singulation is performed, multiple light-emitting devices 100 are produced by cutting into a grid pattern. Cutting methods, for example, can be used, such as a disc-shaped rotary blade, an ultrasonic cutter, or laser irradiation.

[0118] The manufacturing method S20 of the light emitting device having the above-mentioned structure is to make the surface of the second portion 8 of the conductive portion 3 of the sintered substrate 10, which becomes the protruding portion, not be formed by the manufacturing method S10 of the sintered substrate. Figure 3C The stone wall state shown or the smooth plane without bumps or cracks without forming a gap g improves the bonding strength with the element electrode 24, and improves the bonding strength of the conductive part 3 arranged in the through hole 2, thereby achieving reliability and stable control of the light-emitting element 20.

[0119] Then, if Figure 9 As shown, a sintered substrate 10A showing an application example will be described. Figure 9 It is a cross-sectional view of a sintered substrate showing an application example.

[0120] The sintered substrate 10A differs from the sintered substrate 10 described above in that it does not include the recessed portion 9 , the conductive portion 3 is the first portion 13 , and the surface of the ceramic substrate 1 includes a wiring portion 8 as the second portion connected to the conductive portion 3 .

[0121] A sintered substrate 10A includes a ceramic substrate 1 having a first surface 1A and a second surface 1B opposite to the first surface 1A, and having a through-hole 2 extending therethrough to connect the first surface 1A and the second surface 1B; a conductive portion 3 disposed within the through-hole 2; and a wiring portion 8 disposed in contact with at least a portion of the conductive portion 3. The conductive portion 3 includes a metal 45 and a reaction layer 6a of a metal compound disposed on the inner wall defining the through-hole 2. Furthermore, a first metal layer 4 and a second metal layer 5 are disposed on the surface side of the conductive portion 3. A high-metal compound content layer 6c having a higher content of the metal compound 6 than the first and second metal layers 4 and 5 is disposed between the first and second metal layers 4 and 5. The second metal layer 5 is disposed on the surface side of the conductive portion 3. Note that in the sintered substrate 10, the high-metal compound content layer 6c or the first metal layer 4 may also be disposed on the surface side of the conductive portion 3.

[0122] The ceramic substrate 1 has the same structure and components as those described above, except that it does not have the recessed portion 9. The ceramic substrate 1 includes a through hole 2 having the same diameter and extending from the first surface 1A to the second surface 1B.

[0123] The conductive portion 3 includes a portion (first portion) 13 disposed within the through-hole 2 of the ceramic substrate 1 and a wiring portion (second portion) 8 disposed on the surface of the ceramic substrate 1. The conductive portion 3 includes the first portion 13 of the ceramic substrate 1 described above within the thickness of the ceramic substrate 1. Furthermore, the conductive portion 3 includes a second portion, which is disposed in contact with at least a portion of the first portion 13 and serves as the wiring portion 8 disposed on the surface of the ceramic substrate 1. As an example, the first portion 13 and the wiring portion 8 of the conductive portion 3 are preferably formed from the same member. The conductive portion 3 including the first portion 13 and the wiring portion 8 includes a metal 45, and a reaction layer 6a of a metal compound is provided on the inner wall defining the through-hole 2 and the joint surface where the wiring portion 8 contacts the surface of the ceramic substrate 1.

[0124] Furthermore, a first metal layer 4 is provided on the surface side of the conductive portion 3, i.e., on the surface side of the wiring portion 8. A high-metal compound-containing layer 6c having a higher metal compound 6 content than the first metal layer 4 is provided on the first metal layer 4. A second metal layer 5 is provided on the high-metal compound-containing layer 6c (see Figure 3). It should be noted that the surface side of the wiring portion 8 may be the first metal layer 4, the high-metal compound-containing layer 6c, or the second metal layer 5. When the first metal layer 4 or the high-metal compound layer 6c is on the surface side of the wiring portion 8, the second metal layer 5, or both the second metal layer and the high-metal compound layer 6c, are ground or cut. Furthermore, as already described, the arithmetic mean roughness Ra of the surface side of the wiring portion 8, which forms the end surface of the conductive portion 3 exposed from the ceramic substrate 1, is preferably 0.01 μm to 1.5 μm. The method for measuring the arithmetic mean roughness Ra of the surface side of the wiring portion 8 is the same as that described above. The composition and components contained in the conductive portion 3 are also the same as those described above.

[0125] In sintered substrate 10A, the surface of wiring portion 8, which serves as the end face of conductive portion 3, is a smooth, flat surface free of irregularities or cracks, enabling stable connection of device electrodes 24 and the like. Furthermore, sintered substrate 10A includes reaction layer 6a of metal compound 6 at the portion where ceramic substrate 1 and conductive portion 3 come into contact, thereby enhancing the bonding strength between conductive portion 3, including wiring portion 8, and ceramic substrate 1. Furthermore, the opening area of ​​through-hole 2 is larger on second surface 1B than on first surface 1A, resulting in excellent heat dissipation from light-emitting element 20.

[0126] Next, refer to Figures 10 to 11E The method SA10 for manufacturing the sintered substrate 10A will be described. In the method S10 for manufacturing the sintered substrate described above, if the steps or structures are the same, their description will be omitted. Figure 11A This is a cross-sectional view schematically showing a ceramic substrate in which a through-hole is formed in a method for producing a sintered substrate according to another embodiment. Figure 11B This is a cross-sectional view schematically showing a state where a first conductive paste is arranged in a through-hole in a method for manufacturing a sintered substrate according to another embodiment. Figure 11C This is a cross-sectional view schematically showing a state in which a second conductive paste is arranged so as to be in contact with a first conductive paste in a method for manufacturing a sintered substrate according to another embodiment. Figure 11D This is a cross-sectional view schematically showing a state where second active metal powder is arranged in a second conductive paste in a method for manufacturing a sintered substrate according to another embodiment. Figure 11E This is a cross-sectional view schematically showing a state where a first conductive paste and a second conductive paste are sintered in a method for manufacturing a sintered substrate according to another embodiment.

[0127] The manufacturing method SA10 of a sintered substrate includes: SA11, preparing a ceramic substrate 1, which has a first surface 1A and a second surface 1B opposite to the first surface 1A, and has a through hole 2 that penetrates in a manner connecting the first surface 1A and the second surface 1B; S12, configuring a first conductive paste 3A1 containing at least metal powder 45A, a first active metal powder 6A1 and an organic solvent 7B in the through hole 2; S13, configuring a second conductive paste 3A2 on the surface of the ceramic substrate 1 in a manner that contacts the configured first conductive paste 3A1; S14, configuring a second active metal powder 6A2 on the surface of the second conductive paste; S15, sintering the second conductive paste 3A2 configured with the second active metal powder 6A2 and the first conductive paste 3A1 configured in the through hole 2.

[0128] In step SA11 of preparing a ceramic substrate (hereinafter referred to as step SA11), a ceramic substrate 1 is prepared. The ceramic substrate 1 has a through-hole 2 extending therethrough to connect the first surface 1A and the second surface 1B, and has been sintered and solidified. In step SA11, the through-hole 2 is formed, and the recess 9 is not formed. Aside from the lack of recess 9, the ceramic substrate 1 has the same structure and material as previously described.

[0129] Step SA12 of applying the first conductive paste (hereinafter referred to as step SA12) involves applying the first conductive paste 3A1 to the through-holes 2 of the ceramic substrate 1. In step SA12, for example, the first conductive paste 3A1 is applied to the through-holes 2 by screen printing or nozzle injection. The first conductive paste 3A1 used in step SA12 has the same composition as the conductive paste 3A described above.

[0130] SA13 (hereinafter referred to as step SA13) of disposing the second conductive paste is to contact the first conductive paste 3A1 and to be disposed on at least one of the first surface 1A and the second surface 1B of the ceramic substrate 1 (in Figure 11B Second conductive paste 3A2 is applied (in this case, both sides). In step SA13, for example, a mask is placed on ceramic substrate 1 except for the portion where second conductive paste 3A2 is applied, and second conductive paste 3A2 is applied by screen printing or nozzle coating. In step SA13, second conductive paste 3A2 has the same composition as conductive paste 3A already described.

[0131] It should be noted that steps SA12 and SA13 can also be performed in the same step by using the same composition for first conductive paste 3A1 and second conductive paste 3A2, thereby applying conductive paste 3A. Specifically, when applying conductive paste 3A, a mask may be placed on ceramic substrate 1, and conductive paste 3A may be applied within through-hole 2 and on first surface 1A and second surface 1B of ceramic substrate 1 by screen printing or the like.

[0132] Step SA14 (hereinafter referred to as step SA14) involves placing second active metal powder 6A2 on the surface of second conductive paste 3A2. In step S14, once conductive paste 3A has been placed as described above, second active metal powder 6A2 is placed on the surface of conductive paste 3A that is exposed from ceramic substrate 1.

[0133] In step SA14, second active metal powder 6A2 is placed on second conductive paste 3A2 or conductive paste 3A by printing or spraying the second active metal powder 6A2 into a paste or liquid as described above through a mask. Furthermore, when placed on the surface of second conductive paste 3A2 or conductive paste 3A, second active metal powder 6A2 is preferably pressurized so that it is embedded in second conductive paste 3A2 or conductive paste 3A.

[0134] The sintering operation of the conductive paste in step SA15 (hereinafter referred to as step SA15 ) is performed under the same conditions as in the previously described step. Before sintering the conductive paste 3A, the conductive paste may be dried in the same manner as in the previously described step.

[0135] In sintered substrate 10A, similar to second portion 8 of sintered substrate 10 described above, the bonding strength of element electrodes 24 and the like connected to wiring portion 8 is improved. Furthermore, in conductive portion 3 and wiring portion 8, reaction layer 6a of metal compound 6 is formed in the portion in contact with the inner wall of through-hole 2 and the surface of ceramic substrate 1. Furthermore, reactant 6b of metal compound 6 is located around second metal layer 5 formed by sintering second metal powder 5A and, if inorganic filler 7 is included, also around this inorganic filler 7. Consequently, in sintered substrate 10A, the bonding strength between through-hole 2 and ceramic substrate 1, conductive portion 3, and wiring portion 8 is improved.

[0136] Next, refer to Figure 12 A light-emitting device 100A using the sintered substrate 10A will be described. Figure 12 It is a cross-sectional view showing a light emitting device of an application example. It should be noted that the description of the same structure as that already described is omitted.

[0137] The light emitting device 100A includes a sintered substrate 10A and a light emitting element 20 having an element electrode 24. The conductive portion 3 (wiring portion 8) of the sintered substrate 10A is electrically connected to the element electrode 24. As an example, the wiring portion 8 in contact with the conductive portion 3 of the sintered substrate 10A is connected to the element electrode 24 via a plating layer as a bonding member 11. The light emitting device 100A includes a light reflecting member 30 similar to the light emitting device 100 already described. It should be noted that the wiring portion 8 does not become Figure 3CThe surface of the light emitting device 100A is smooth and flat, without any unevenness or cracks, and thus remains flat even when the plated bonding member 11 is disposed. Therefore, the light emitting device 100A can achieve stable connection of the element electrodes without increasing the amount of plating.

[0138] The method for manufacturing the light-emitting device 100A involves the same steps as the previously described method S20 for manufacturing the light-emitting device 100. Specifically, the steps include preparing the sintered substrate 10A, disposing the conductive portion 3 in the through-hole 2 of the ceramic substrate 1, and electrically connecting the element electrode 24 to the conductive portion 3. Furthermore, in the step of disposing the conductive portion 3, the element electrode 24 and the conductive portion 3 are electrically connected via a bonding member such as the wiring portion 8 or a plating layer applied to the wiring portion 8. Furthermore, the light-emitting device 100A is manufactured by disposing the light-reflecting member 30.

[0139] It should be noted that the through hole 2 of the sintered substrate 10 can improve the thermal conductivity of the sintered substrate 10 and improve the heat dissipation by making the opening area of ​​the second surface 1B larger than the opening area of ​​the first surface 1A on the side that becomes the electrode of the bonding mounting component, and achieve thinning, reliability and other performance improvements while maintaining strength and rigidity. As an example, the through hole 2 can be formed by laser processing, mechanical processing, or chemical processing such as etching. It should be noted that the through hole 2 is preferably set as a polygon, but the polygon mentioned here can also be a shape other than a polygon formed by strictly connecting straight lines with the vertex angles of two consecutive sides, for example, it can also be a shape such as a polygon with rounded corners such as connecting straight lines with small arcs.

[0140] In addition, in the present invention, the relationship among the items may be as follows.

[0141] [Item 1] A method for manufacturing a sintered substrate, comprising: preparing a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole extending therethrough so as to connect the first surface and the second surface; disposing a conductive paste in the through hole, the conductive paste comprising at least metal powder, a first active metal powder, and an organic solvent; disposing a second active metal powder on the surface of the conductive paste; and sintering the conductive paste having the second active metal powder disposed thereon.

[0142] [Item 2] The method for manufacturing a sintered substrate according to Item 1, wherein, in the step of preparing the ceramic substrate, a recess is provided on at least one of the first surface and the second surface, and the through hole is provided at the position of the recess.

[0143] [Item 3] The method for producing a sintered substrate according to Item 1 or 2, wherein, in the step of disposing the conductive paste, the content of the first active metal powder is 1 part by weight or more and 5 parts by weight or less.

[0144] [Item 4] The method for manufacturing a sintered substrate according to any one of Items 1 to 3, wherein, in the step of configuring the conductive paste, the metal powder includes at least any one of Ag, Al, Zn, Sn, and Ag-Cu alloy powder.

[0145] [Item 5] The method for producing a sintered substrate according to any one of Items 1 to 4, wherein, in the step of disposing the conductive paste, the metal powder further contains at least any one of Cu, Cr, and Ni.

[0146] [Item 6] The method for manufacturing a sintered substrate according to any one of Items 1 to 5, wherein, in the step of configuring the conductive paste, the first active metal powder contains at least any one of TiH2, CeH2, ZrH2, and MgH2.

[0147] [Item 7] The method for manufacturing a sintered substrate according to any one of Items 1 to 6, wherein, in the step of configuring the second active metal powder, the second active metal powder contains at least any one of TiH2, CeH2, ZrH2, and MgH2.

[0148] [Item 8] The method for producing a sintered substrate according to any one of Items 1 to 7, wherein, in the step of disposing the second active metal powder, the second active metal powder is contained in an organic solvent.

[0149] [Item 9] The method for producing a sintered substrate according to any one of Items 1 to 8, wherein, in the step of disposing the conductive paste, the conductive paste further contains a resin.

[0150] [Item 10] The method for producing a sintered substrate according to any one of Items 1 to 9, wherein, in the step of disposing the conductive paste, the conductive paste further contains a plurality of inorganic fillers other than metal.

[0151] [Item 11] The method for manufacturing a sintered substrate according to any one of Items 1 to 10, wherein, in the step of sintering the conductive paste, the sintering environment is an Ar environment of 99.9% or more or an Ar environment of 10 -5 Vacuum environment below Pa.

[0152] [Item 12] The method for manufacturing a sintered substrate according to any one of Items 1 to 11, wherein, in the step of preparing the ceramic substrate, the through-hole is formed by irradiating the ceramic substrate with laser light from the first surface side.

[0153] [Item 13] The method for manufacturing a sintered substrate according to any one of Items 2 to 12, wherein, in the step of preparing the ceramic substrate, the recess is formed by irradiating the ceramic substrate with laser light.

[0154] [Item 14] A method for manufacturing a sintered substrate according to any one of items 1 to 13, wherein, in the step of configuring the conductive paste, the conductive paste comprises: a first conductive paste configured in the through hole, and a second conductive paste that is in contact with the first conductive paste and configured on at least one of the first surface and the second surface.

[0155] [Item 15] A method for manufacturing a sintered substrate according to any one of items 2 to 12 cited in item 2, wherein, in the process of configuring the conductive paste, the conductive paste is configured in the recess and comprises a first conductive paste configured in the recess and the through hole, and a second conductive paste in contact with the first conductive paste and configured on at least one of the first surface and the second surface.

[0156] [Item 16] A method for manufacturing a light-emitting device, comprising the following steps: preparing a sintered substrate manufactured by the method for manufacturing a sintered substrate described in any one of Items 1 to 15; configuring a light-emitting element having an element electrode on the sintered substrate, in the step of preparing the sintered substrate, sintering the conductive paste arranged in the through hole to form a conductive portion, and in the step of configuring the light-emitting element, electrically connecting the conductive portion to the element electrode.

[0157] [Item 17] A sintered substrate, comprising: a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole extending therethrough so as to connect the first surface to the second surface; a conductive portion arranged in the through hole, the conductive portion comprising a reaction layer of a metal and a metal compound arranged on an inner wall defining the through hole, a first metal layer and a second metal layer being provided on the surface side of the conductive portion, a high metal compound content layer being provided between the first metal layer and the second metal layer, the second metal layer being provided on the surface side of the conductive portion.

[0158] [Item 18] A sintered substrate, comprising: a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole extending therethrough so as to connect the first surface to the second surface; a conductive portion arranged in the through hole, the conductive portion comprising a metal and a reaction layer of a metal compound arranged on an inner wall defining the through hole, a first metal layer being provided on the surface side of the conductive portion, a high metal compound containing layer being provided on the first metal layer and having a higher content of the metal compound than that of the first metal layer, the high metal compound containing layer being arranged on the surface side of the conductive portion.

[0159] [Item 19] The sintered substrate according to Item 17 or 18, wherein at least one of the first surface and the second surface has a recessed portion having a larger diameter than the through hole and connected to the through hole.

[0160] [Item 20] The sintered substrate according to any one of Items 17 to 19, wherein an arithmetic mean roughness Ra of an end surface of the conductive portion exposed from the ceramic substrate is 0.01 μm or more and 1.5 μm or less.

[0161] [Item 21] The sintered substrate according to any one of Items 17 to 20, wherein the conductive portion includes a first portion located within the ceramic substrate and a second portion that is continuous with the first portion and partially exposed from the ceramic substrate.

[0162] [Item 22] The sintered substrate according to any one of Items 17 to 21, wherein the metal includes at least any one of Ag, Al, Zn, Sn, and an Ag-Cu alloy.

[0163] [Item 23] The sintered substrate according to any one of Items 17 to 22, wherein the metal further includes at least one of Cu, Cr, and Ni.

[0164] [Item 24] The sintered substrate according to any one of Items 17 to 22, wherein the ceramic substrate contains at least one of silicon nitride, aluminum nitride, boron nitride, magnesium oxide, and aluminum oxide.

[0165] [Item 25] A light-emitting device comprising: a sintered substrate according to any one of Items 17 to 24; and a light-emitting element having an element electrode, wherein the conductive portion of the sintered substrate is electrically connected to the element electrode.

[0166] [Item 26] A light-emitting device according to Item 25, wherein the conductive portion includes a first portion located within the substrate of the ceramic substrate and a second portion that is continuous with the first portion and partially exposed from the ceramic substrate, and the second portion is electrically connected to the element electrode via a bonding component.

[0167] Industrial applicability

[0168] The light-emitting device according to the embodiments of the present disclosure can be used as a headlamp light source with variable light distribution. Furthermore, the light-emitting device according to the embodiments of the present disclosure can be used in backlight sources for liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements and destination guides, as well as image readers and projectors in digital cameras, fax machines, copiers, and scanners.

[0169] Description of Reference Numerals

[0170] 1: Ceramic substrate

[0171] 1A: First side

[0172] 1B: Second side

[0173] 2: Through hole

[0174] 2a: Inclined surface

[0175] 3: Conductive part

[0176] 3A: Conductive paste

[0177] 3A1: First conductive paste

[0178] 3A2: Second conductive paste

[0179] 4: First metal layer

[0180] 5: Second metal layer

[0181] 6: Metal compounds

[0182] 6A: Active metal powder

[0183] 6A1: First active metal powder

[0184] 6A2: Second active metal powder

[0185] 6a: Reaction layer

[0186] 6b: Reactants

[0187] 6c: High metal compound containing layer

[0188] 7: Inorganic filler: after sintering

[0189] 7A: Inorganic filler: before sintering

[0190] 7B: Organic solvents

[0191] 8: Part 2 (Wiring Section)

[0192] 9: Concave

[0193] 9a: First recess

[0194] 9b: Second concave portion

[0195] 10: Sintered substrate

[0196] 11: Joining parts

[0197] 12: Metal bumps

[0198] 13: Part 1

[0199] 20: Light-emitting element

[0200] 21: Semiconductor layer

[0201] 22: Component substrate

[0202] 23: Translucent components

[0203] 24: Component electrode

[0204] 30: Light reflecting parts

[0205] 45: Metal

[0206] 100: Light-emitting device

[0207] S10: Method for manufacturing sintered substrate

[0208] S11: Prepare ceramic substrate

[0209] S12: Filling via paste

[0210] S13: Prepare conductive paste

[0211] S14: Sintered ceramic substrate

[0212] S20: Manufacturing method of light emitting device

[0213] S21: Preparing a sintered substrate

[0214] S22: Configure light emitting elements

[0215] S23: Configure light reflecting components

Claims

1. A method for manufacturing a sintered substrate, characterized in that: The process includes the following steps: preparing a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating therethrough so as to connect the first surface and the second surface; Disposing a conductive paste in the through hole, the conductive paste comprising at least metal powder, first active metal powder and an organic solvent; disposing a second active metal powder on the surface of the conductive paste; The conductive paste containing the second active metal powder is sintered.

2. The method for manufacturing a sintered substrate according to claim 1, wherein: In the step of preparing the ceramic substrate, a recessed portion is provided on at least one of the first surface and the second surface, and the through-hole is provided at the position of the recessed portion.

3. The method for manufacturing a sintered substrate according to claim 1 or 2, wherein: In the step of disposing the conductive paste, the content of the first active metal powder is 1 part by weight or more and 5 parts by weight or less.

4. The method for producing a sintered substrate according to any one of claims 1 to 3, wherein: In the step of disposing the conductive paste, the metal powder includes at least any one of Ag, Al, Zn, Sn, and Ag-Cu alloy powder.

5. The method for producing a sintered substrate according to any one of claims 1 to 4, wherein: In the step of disposing the conductive paste, the metal powder further includes at least any one of Cu, Cr, and Ni.

6. The method for producing a sintered substrate according to any one of claims 1 to 5, wherein: In the step of disposing the conductive paste, the first active metal powder includes at least any one of TiH 2 , CeH 2 , ZrH 2 , and MgH 2 .

7. The method for producing a sintered substrate according to any one of claims 1 to 6, wherein: In the step of arranging the second active metal powder, the second active metal powder includes at least any one of TiH 2 , CeH 2 , ZrH 2 , and MgH 2 .

8. The method for producing a sintered substrate according to any one of claims 1 to 7, wherein: In the step of arranging the second active metal powder, the second active metal powder is contained in an organic solvent.

9. The method for producing a sintered substrate according to any one of claims 1 to 8, wherein: In the step of disposing the conductive paste, the conductive paste further includes a resin.

10. The method for producing a sintered substrate according to any one of claims 1 to 9, wherein: In the step of disposing the conductive paste, the conductive paste further includes a plurality of inorganic fillers other than the metal.

11. The method for producing a sintered substrate according to any one of claims 1 to 10, wherein: In the process of sintering the conductive paste, the sintering environment is an Ar environment of 99.9% or more or a 10 -5 Vacuum environment below Pa.

12. The method for producing a sintered substrate according to any one of claims 1 to 11, wherein: In the step of preparing the ceramic substrate, the through-hole is formed by irradiating the ceramic substrate with laser light from the first surface side.

13. The method for producing a sintered substrate according to any one of claims 2 to 12, wherein: In the step of preparing the ceramic substrate, the recessed portion is formed by irradiating the ceramic substrate with laser light.

14. The method for producing a sintered substrate according to any one of claims 1 to 13, wherein: In the step of arranging the conductive paste, the conductive paste includes a first conductive paste arranged in the through-hole and a second conductive paste in contact with the first conductive paste and arranged on at least one of the first surface and the second surface.

15. The method for producing a sintered substrate according to any one of claims 2 to 12, wherein: In the step of disposing the conductive paste, the conductive paste is disposed in the concave portion. The invention further includes a first conductive paste disposed in the recess and the through-hole, and a second conductive paste in contact with the first conductive paste and disposed on at least one of the first surface and the second surface.

16. A method for manufacturing a light emitting device, characterized in that: The process includes the following steps: preparing a sintered substrate manufactured by the method for manufacturing a sintered substrate according to any one of claims 1 to 15; A light emitting element having element electrodes is arranged on the sintered substrate. In the step of preparing the sintered substrate, the conductive paste disposed in the through-holes is sintered to form conductive portions. In the step of arranging the light emitting element, the conductive portion is electrically connected to the element electrode.

17. A sintered substrate, characterized in that: have: a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating therethrough so as to connect the first surface and the second surface; a conductive portion disposed in the through hole, The conductive portion includes a reaction layer of a metal and a metal compound disposed on an inner wall defining the through hole. A first metal layer and a second metal layer are provided on the surface side of the conductive portion, a high metal compound content layer having a higher metal compound content than the first metal layer and the second metal layer is provided between the first metal layer and the second metal layer, and the second metal layer is arranged on the surface side of the conductive portion.

18. A sintered substrate, characterized in that: have: a ceramic substrate having a first surface and a second surface opposite to the first surface, and having a through hole penetrating therethrough so as to connect the first surface and the second surface; a conductive portion disposed in the through hole, The conductive portion includes a reaction layer of a metal and a metal compound disposed on an inner wall defining the through hole. A first metal layer is provided on the surface side of the conductive portion, and a high metal compound content layer having a higher metal compound content than the first metal layer is provided on the first metal layer. The high metal compound content layer is arranged on the surface side of the conductive portion.

19. The sintered substrate according to claim 17 or 18, characterized in that At least one of the first surface and the second surface has a recessed portion having a larger diameter than the through hole and connected to the through hole.

20. The sintered substrate according to any one of claims 17 to 19, wherein An arithmetic mean roughness Ra of an end surface of the conductive portion exposed from the ceramic substrate is 0.01 μm or more and 1.5 μm or less.

21. The sintered substrate according to any one of claims 17 to 20, wherein The conductive portion includes a first portion located within the ceramic substrate and a second portion that is continuous with the first portion and partially exposed from the ceramic substrate.

22. The sintered substrate according to any one of claims 17 to 21, wherein The metal includes at least any one of Ag, Al, Zn, Sn, and an Ag-Cu alloy.

23. The sintered substrate according to any one of claims 17 to 22, wherein: The metal further includes at least any one of Cu, Cr, and Ni.

24. The sintered substrate according to any one of claims 17 to 23, wherein The ceramic substrate includes at least one of silicon nitride, aluminum nitride, boron nitride, magnesium oxide, and aluminum oxide.

25. A light emitting device, characterized in that: have: The sintered substrate according to any one of claims 17 to 24; a light-emitting element having an element electrode; The conductive portion of the sintered substrate is electrically connected to the element electrode.

26. The light emitting device according to claim 25, characterized in that The conductive portion includes a first portion located within the ceramic substrate and a second portion continuous with the first portion and partially exposed from the ceramic substrate. The second portion and the element electrode are electrically connected via a bonding member.

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