Plasma generating device and plasma enhanced atomic layer deposition equipment

Abstract

The invention discloses a plasma generating device and plasma enhanced atomic layer deposition equipment, and the plasma generating device comprises a plasma generating module and a variable pitch module; the plasma generation module comprises a reaction tube and a coil, and the coil is wound on the outer side of the reaction tube; the variable pitch module comprises a plurality of movable slide blocks, and coils wound on the outer side of the reaction tube are connected with the slide blocks; and when the sliding block moves, each wound coil is driven to move. Due to the fact that different deposition processes require different plasma densities and intensities, the variable-pitch module changes the distance between every two turns of coils, then the intensity of an induced magnetic field is changed, and the characteristics, the induction efficiency and the like of the plasma are changed through the intensity of the induced magnetic field. The variable-pitch module can also integrally adjust the position of the coil, so that the height between the coil and the sample is changed, and the density of plasma reaching the sample is further influenced. The process flexibility is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor and pan-semiconductor atomic layer deposition equipment, and more specifically, to a plasma generating device and a plasma enhanced atomic layer deposition equipment. Background Art

[0002] Plasma-enhanced atomic layer deposition (PEALD) equipment is a common thin film deposition system. Due to its precise deposition rate, low substrate damage, and high deposition uniformity, it is widely used in semiconductor, pan-semiconductor, optics, biomedicine, and other fields. However, the plasma coils in existing equipment are difficult to adjust, which limits the process flexibility of the equipment. This non-adjustable plasma coil means that it is difficult to optimize the plasma characteristics according to different material and process requirements during the deposition process. For example, different precursor and substrate materials may require plasmas of different intensities and energies to achieve optimal deposition results. The non-adjustable coil limits the optimization space for process parameters. Furthermore, the difficulty of adjusting the plasma coil can make it difficult to optimize the film quality: the characteristics of the plasma directly affect the film growth rate, uniformity, and quality. The non-adjustable plasma coil can lead to uneven plasma distribution on the substrate, which in turn affects the uniformity and consistency of the film, especially on large substrates or substrates with complex geometries. Summary of the Invention

[0003] The present invention provides a plasma generating device and a plasma enhanced atomic layer deposition device to solve the problem that the plasma coil in the existing plasma enhanced atomic layer deposition device is difficult to adjust.

[0004] In order to achieve the above object, the technical solution provided by the present invention is: A plasma generating device comprises a plasma generating module and a variable pitch module; The plasma generating module includes a reaction tube and a coil, wherein the coil is wound around the outside of the reaction tube; The variable pitch module includes a plurality of movable sliders, each coil wound around the outside of the reaction tube is connected to a corresponding slider, or a slider is provided on both sides of each coil wound around the outside of the reaction tube; When the slider moves, each coil of the coil is moved to change the spacing or height of the coil.

[0005] As a further improvement, the slider is connected to a worm, and a plurality of spiral lead grooves are provided on the worm. Each slider is connected to a corresponding spiral lead groove through a guide block; when the worm rotates, it drives the slider to move with different strokes.

[0006] As a further improvement, one end of the reaction tube is sealed and connected to a vent flange, and the other end is sealed and connected to a water cooling flange; The vent flange is connected to a vent valve for injecting source gas; The water-cooling flange is provided with a flange opening which is communicated with the inner chamber of the reaction tube.

[0007] As a further improvement, a connecting shielding shell is sleeved on the outer side of the reaction tube; a first opening is provided on one side of the shielding shell for the slider to pass through; and a second opening is provided on the other side for the two ends of the coil to pass through; The two ends of the coil extend to the outside of the shielding shell and are connected to the clamping assembly; the clamping assembly includes a clamping bracket and two clamps slidably connected to the clamping bracket; the two ends of the coil are respectively connected to the clamps.

[0008] The present application also provides a plasma-enhanced atomic layer deposition device, including the plasma generating device, and also including an inlet chamber, a main chamber and a sub-chamber arranged in sequence at one end of the reaction tube and coaxial therewith; and also including a heating component, one end of the heating component is supported on one end of the sub-chamber, and the other end of the heating component passes through the other end of the sub-chamber and extends into the main chamber.

[0009] As a further improvement, a heating disc is provided at one end of the heating component located in the main cavity, and an auxiliary back air channel is opened on the upper side of the heating disc. The auxiliary back air channel is connected to the main back air channel, and the main back air channel is opened on the support rod of the heating component.

[0010] As a further improvement, an insulating ring is installed on the upper side of the heating disc, and a conductive disc is installed on the upper side of the insulating ring.

[0011] As a further improvement, the introduction cavity is connected to an introduction pipeline.

[0012] As a further improvement, an openable side cavity is provided on one side of the main cavity, a needle valve is installed above the side cavity, and the opening of the needle valve is provided near the connection between the main cavity and the side cavity.

[0013] As a further improvement, one side of the secondary cavity is connected to a butterfly valve, a gate valve and a molecular pump in sequence.

[0014] Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: (1) In a plasma generating device according to the present invention, since different deposition processes require different plasma densities and intensities, a variable pitch module changes the spacing between each turn of the coil, thereby changing the intensity of the induced magnetic field, and changing the characteristics of the plasma, induction efficiency, etc. through the intensity of the induced magnetic field. The variable pitch module can also adjust the position of the coil as a whole, thereby changing the height between the coil and the sample, thereby affecting the plasma density reaching the sample. This improves process flexibility, allowing users to flexibly adjust the plasma intensity, energy distribution, and density according to different process requirements (such as different precursors, substrate materials, or deposition rate requirements). This significantly improves the process adaptability of the equipment and the ability to optimize film quality.

[0015] (2) In a plasma generating device of the present invention, a coil is wound around a reaction tube so as to facilitate adjustment of the coil position.

[0016] (3) A plasma generating device of the present invention is provided with a clamping bracket and a clamp, which facilitates the fixing of the coil after the coil position is adjusted.

[0017] (4) The plasma-enhanced atomic layer deposition apparatus of the present invention has a multi-section arrangement, with a plasma generator, an inlet chamber, a main chamber, and a sub-chamber arranged coaxially from top to bottom. Precursor gas can enter through the inlet pipe and flow downward toward the sample. Plasma flows downward from the plasma generator toward the sample. This structure is simple, and the precursor gas and plasma flow unimpeded toward the sample, thereby improving the utilization rate of the precursor material and reducing material waste.

[0018] (5) The plasma-enhanced atomic layer deposition device of the present invention is compatible with multiple process modes. The heating component enables the device to simultaneously support multiple process modes such as thermal deposition and plasma-enhanced deposition. Users can select the most appropriate process according to their specific needs, thereby improving the versatility of the device.

[0019] (6) A plasma enhanced atomic layer deposition device of the present invention is provided with a side chamber, a needle valve is installed above the side chamber, and the opening of the needle valve is provided near the connection between the main chamber and the side chamber. During the deposition process, the needle valve allows gas compatible with the deposition material to be introduced to form a gas shield between the main chamber and the side chamber, thereby preventing the precursor gas from being diverted to the side close to the side chamber and causing a large amount of accumulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 Schematic diagram of the overall structure of the deposition equipment; Figure 2 A schematic diagram of the overall structure of the deposition equipment from another angle; Figure 3 It is a cross-sectional view of the overall structure of the deposition equipment; Figure 4Schematic diagram of the heating component; Figure 5 This is an enlarged cross-sectional view of the heating component AA; Figure 6 This is a top view of the heating disk; Figure 7 Schematic diagram of the heating component structure in another case; Figure 8 for Figure 7 Enlarged view of the middle heating component A; Figure 9 Schematic diagram of plasma generation module; Figure 10 This is a schematic diagram of the plasma generation module from another angle; Figure 11 is a cross-sectional view of a plasma generating module; Figure 12 Schematic diagram of the interior of the plasma generation module.

[0021] Description of labels: 100. Samples; 1. Molecular pump; 2. Gate valve; 3. Butterfly valve; 4. Auxiliary chamber; 5. Main chamber; 501. Side chamber; 502. Needle valve; 6. Inlet chamber; 601. Inlet pipeline; 7. Plasma generating module; 701. Shielding shell; 702. First opening; 703. Second opening; 704. Reaction tube; 705. Water-cooling flange; 7051. Flange opening; 7052. Cooling tube; 707. Coil; 708. Vent valve; 709. Vent flange; 710. Connecting screw; 8. Variable pitch module; 801. Slider; 9. Heating assembly; 901. Heating disc; 9011. Main back-gas channel; 9012. First auxiliary back-gas channel; 9013. Second auxiliary back-gas channel; 902. Retaining ring; 903. Insulating ring; 904. Conductive disc; 101. Clamping bracket; 102. Clamp. DETAILED DESCRIPTION

[0022] In order to further understand the content of the present invention, the present invention is described in detail with reference to the accompanying drawings and embodiments.

[0023] The structures, proportions, sizes, etc. depicted in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not intended to limit the conditions under which the present invention can be implemented and therefore have no substantive technical significance. Any structural modifications, changes in proportional relationships, or adjustments in size should still fall within the scope of the technical contents disclosed in the present invention without affecting the effects and objectives that can be achieved by the present invention.

[0024] It should be noted that the terms "first," "second," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, for the purposes of describing the embodiments of the present application herein.

[0025] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inside", "outside", "middle", "vertical", "horizontal", "transverse", "longitudinal" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. These terms are mainly intended to better describe the present application and its embodiments, and are not intended to limit the indicated devices, elements or components to having a specific orientation, or to be constructed and operated in a specific orientation. Moreover, in addition to being used to indicate orientations or positional relationships, some of the above terms may also be used to indicate other meanings. For example, the term "upper" may also be used to indicate a certain dependency or connection relationship in certain circumstances. For those of ordinary skill in the art, the specific meanings of these terms in the present application can be understood according to the specific circumstances.

[0026] like Figure 9-12 As shown, this embodiment provides a plasma generating device, which is applied to a thin film deposition device, and includes a plasma generating module 7 and a variable pitch module 8.

[0027] The plasma generation module 7 includes a reaction tube 704 and a coil 707, which is wound around the outside of the reaction tube 704. The pitch-variable module 8 includes a plurality of movable sliders 801, to which the coil 707 wound around the outside of the reaction tube 704 is connected. When the sliders 801 move, each coil turn moves, thereby changing the pitch or height of the coil 707.

[0028] In this embodiment, Figure 12 As shown, each coil 707 wound around the outside of the reaction tube 704 is connected to a corresponding slider 801. However, in some other embodiments, such as Figure 11 As shown, a slider 801 is correspondingly provided on both sides of each coil 707 wound around the outside of the reaction tube 704 .

[0029] Specifically in this embodiment, the reaction tube 704 is a quartz tube with a chamber inside. Four coils are wound around the outside of the reaction tube 704 . Each coil 707 is connected to a slider 801 . Four sliders 801 are provided in the variable pitch module 8 .

[0030] In the thin film deposition equipment, source gas is introduced into the reaction tube 704, and the coil 707 is used as an induction coil to introduce a radio frequency signal, generating a high-frequency alternating magnetic field in the reaction tube 704 around which the coil 707 is wound. The source gas accelerates free electrons in the induced magnetic field, allowing them to obtain sufficient energy to collide with gas molecules, thereby achieving gas ionization and generating plasma. Since different deposition processes require different plasma densities and intensities, each coil 707 is connected to a slider 801. When the slider 801 moves, it drives each coil to move, thereby changing the spacing between each coil turn, thereby changing the intensity of the induced magnetic field, and changing the characteristics of the plasma, induction efficiency, etc. through the induced magnetic field intensity. In addition, the variable pitch module 8 can also adjust the position of the coil 707 as a whole, thereby changing the height between the coil 707 and the sample 100, thereby affecting the plasma density reaching the sample.

[0031] Combine Figure 9 and Figure 12 As shown, the pitch-variable module 8 also includes a base, a pitch-variable assembly 802, and a lifting assembly 803. The lifting assembly 803 is mounted on the base, and the pitch-variable assembly 802 is connected to the lifting assembly 803. Specifically, the lifting assembly 803 includes a slide rail and a lifting block that moves along the slide rail. The lifting block is vertically mounted on the base. When the lifting block moves, the pitch-variable assembly 802 moves up and down, thereby changing the height of the coil 707 from the sample 100 through the lifting assembly 803, thereby affecting the plasma density reaching the sample. The pitch-variable assembly 802 also includes four sliders 801. Each slider 801 is mounted on a guide rod disposed vertically. A guide block is connected to each slider 801, and the other end of the guide block is connected to a worm. Specifically, the worm has four spiral lead grooves. When the worm rotates, the guide block moves along the lead grooves, driving the sliders 801 to slide along the guide rod, thereby changing the spacing between the sliders 801. The sliders 801 change the pitch between each coil turn, thereby changing the Faraday electromagnetic induction intensity generated by the coil 707. When the lifting assembly 803 drives the pitch-changing assembly 802 to move up and down, it further drives the slider 801 to move, thereby changing the height of the coil 707.

[0032] like Figure 12 As shown, one end of the reaction tube 704 is sealed to a vent flange 709, and the other end is sealed to a water-cooling flange 705. A vent valve 708 is connected to the vent flange 709 for injecting source gas; the water-cooling flange 705 has a flange opening 7051 that communicates with the inner chamber of the reaction tube 704.

[0033] The vent flange 709 and the water-cooling flange 705 each have grooves for receiving sealing rings at their respective contact points with the reaction tube 704. The sealing rings are installed in these grooves. Connecting screws 710 connect the vent flange 709 and the water-cooling flange 705, with the reaction tube 704 positioned between them. When the connecting screws 710 are tightened, the sealing rings are squeezed between the reaction tube 704 and the vent flange 709, and between the reaction tube 704 and the water-cooling flange 705, respectively. This results in a sealed connection between one end of the reaction tube 704 and the vent flange 709, and between the other end and the water-cooling flange 705.

[0034] A cooling pipe 7052 is also installed on the water-cooling flange 705, and a coolant is passed through the cooling pipe 7052 to cool the water-cooling flange 705. In addition, the base of the pitch-changing module 8 is also fixedly installed on the water-cooling flange 705, thereby supporting and fixing the pitch-changing module 8.

[0035] Combine Figure 9 and Figure 12 As shown, the outer side of the reaction tube 704 is connected to the shielding shell 701. The shielding shell 701 has a first opening 702 on one side for the slider 801 to pass through, and a second opening 703 on the other side for the two ends of the coil 707 to pass through.

[0036] After coil 707 is wrapped around reaction tube 704, its ends extend through second opening 703 to the outside of shielding shell 701, where they connect to a clamping assembly. The clamping assembly comprises a clamping bracket 101 and two clamps 102 slidably connected to the clamping bracket 101. Each end of coil 707 is connected to a clamp 102. Clamping bracket 101 is fixed to water-cooling flange 705. Clamp 102 comprises a clamping base and a clamping block. The clamping base is mounted on clamping bracket 101, and the clamping block is bolted to the clamping base, clamping coil 707 between the clamping base and the clamping block. The position of the clamping base on clamping bracket 101 is adjustable. This allows for the distance between the two clamps 102 to be adjusted, allowing the slider 801 to adjust the spacing between each coil turn. Furthermore, the height of both clamps 102 can be adjusted simultaneously, allowing the lifting assembly 803 to adjust the height of coil 707.

[0037] It should also be noted that, in some other embodiments, when a slider 801 is provided on both sides of each coil 707 wound around the outside of the reaction tube 704, the shape of the slider 801 can be set to be arc-shaped. The arc-shaped slider 801 can cooperate with the outside of the reaction tube 704, and can have more contact area with the coil 707 when moving, which can make it easier to adjust the spacing between the coils.

[0038] like Figure 1-3As shown, the present application also provides a plasma enhanced atomic layer deposition device, including the plasma generating device described above, and also including an introduction cavity 6, a main cavity 5 and a sub-cavity 4 sequentially arranged at one end of a reaction tube 704 and coaxial therewith. Specifically, the lower end of the reaction tube 704 is sealed and connected to the introduction cavity 6 through a connecting flange, and a flange opening 7051 is provided on the water-cooling flange 705. An opening is also provided on the connecting flange thereto, so that the inner chamber of the reaction tube 704 is connected to the inner chamber of the introduction cavity 6. The lower end of the introduction cavity 6 is also sealed and connected to the main cavity 5 through a flange, and an opening is also provided on the flange, so that the inner chamber of the introduction cavity 6 is connected to the inner chamber of the main cavity 5. The lower end of the main cavity 5 is also sealed and connected to the sub-cavity 4 through a flange, and an opening is also provided on the flange, so that the inner chamber of the main cavity 5 is connected to the inner chamber of the sub-cavity 4.

[0039] The deposition device further includes a heating assembly 9, one end of which is supported and connected to the lower end of the auxiliary chamber 4, and the other end of which passes through the upper end of the auxiliary chamber 4 and extends into the main chamber 5 (with Figure 3 (see view orientation in the ).

[0040] The heating assembly 9 includes a support rod and a heating disc 901. One end of the support rod is supported at the lower end of the auxiliary cavity 4, and the heating disc 901 is located at the other end of the support rod. The support rod extends through the auxiliary cavity 4 into the main cavity 5, and the support rod can also guide the gas. Specifically, a heating disc 901 is provided at one end of the heating assembly 9 located in the main cavity 5, and an auxiliary back gas channel is opened on the upper side of the heating disc 901. The auxiliary back gas channel is connected to the main back gas channel 9011, and the main back gas channel 9011 is opened at the center of the support rod of the heating assembly 9.

[0041] Combine Figure 4 、 Figure 5 and Figure 6 As shown, the auxiliary back-gas channels include a plurality of linear first auxiliary back-gas channels 9012 and a plurality of arc-shaped second auxiliary back-gas channels 9013. The first auxiliary back-gas channels 9012 are arranged radially along the heating disk 901 and communicate with the main back-gas channels 9011, while the second auxiliary back-gas channels 9013 are arranged circumferentially along the heating disk 901 and communicate with the first auxiliary back-gas channels 9012.

[0042] The heating component 9 is mainly used to heat the sample, or apply a bias voltage to the sample for cleaning or auxiliary deposition.

[0043] During heating, the sample 100 is placed on the heating disc 901. Heating wires are also distributed on the heating disc 901 for heating the upper surface of the heating disc 901. A cooling channel is also provided inside the heating disc 901 to stabilize the temperature of the heating disc 901 and to cool the heating disc 901. Due to the influence of processing accuracy, the heating disc 901 and the sample 100 cannot be completely fitted together, and heat conduction between the two is usually achieved through multi-point contact. By providing a main back gas channel 9011 and an auxiliary back gas channel with a diameter of approximately 0.5 mm on the upper surface of the heating disc 901, uniform heating and cooling of the sample 100 placed above is achieved. Gas flows in through the main back gas channel 9011, disperses through the auxiliary back gas channel, and is evenly distributed to the back of the sample 100. The heating disc 901 heats the sample in combination with the gas, thereby achieving uniform heating and cooling of the sample. In addition, a step groove is provided on the outer periphery of the heating disc 901, and a retaining ring 902 is installed in the step groove. Because backgas pressure is applied to heating disk 901, the contact surface between sample 100 and heating disk 901 shifts under this pressure, necessitating the addition of retaining ring 902 to radially constrain the sample. The upper surface of retaining ring 902 extends 1-2 mm beyond the sample. In practice, when backgas at an appropriate pressure and flow rate is applied to the back of sample 100, the sample 100 will separate from heating disk 901 by approximately 0-0.5 mm. At this point, retaining ring 902 effectively constrains the sample's position.

[0044] Combine Figure 7 and Figure 8 As shown, on the other hand, when a bias voltage needs to be applied to the sample, back gas is not introduced into the back gas channel of the heating disc 901. In this case, the retaining ring 902 is removed from the heating assembly 9. An insulating ring 903 is installed on the upper side of the heating disc 901, and a conductive disc 904 is installed on the upper side of the insulating ring 903. Specifically, the insulating ring 903 is in contact with the upper surface of the heating disc 901 and is used to transfer heat from the heating disc 901. The insulating ring 903 needs to be made of a material with high thermal conductivity, such as alumina ceramic, 304 stainless steel, etc., whose thermal conductivity can reach 20-30W / (mk). The use of high thermal conductivity materials can better transfer the heat of the heating disc 901. A conductive disc 904 is set on the upper part of the insulating ring 903, and the conductive disc is made of conductive metal material. The middle of the conductive disc 904 is used to place the sample. The insulating ring 903 and the conductive disc 904 can be fixedly connected to the heating disc 901 by bolts.

[0045] The sample 100 is placed on a conductive disk 904, which is connected to an RF electrode via a vacuum wire. The RF signal is introduced through the RF electrode, and then from the RF electrode into the conductive disk 904 via a wire connection to charge it, and then transferred to the sample 100 placed on top to charge it, thereby generating a bias effect on the sample 100.

[0046] Combine Figure 6As shown, in this application, the introduction chamber 6 is connected to an introduction pipe 601. The introduction pipe 601 is used to introduce the precursor gas. Preferably, the introduction pipe 601 is tilted relative to the axial center of the introduction chamber 6 to facilitate the flow of the precursor gas toward the sample after introduction.

[0047] An openable side cavity 501 is provided on one side of the main cavity 5 for placing a sample into the main cavity 5 through the side cavity 501. Furthermore, a needle valve 502 is installed above the side cavity 501, and the opening of the needle valve 502 is provided near the connection between the main cavity 5 and the side cavity 501.

[0048] One side of the sub-cavity 4 is sequentially connected to the butterfly valve 3, the gate valve 2 and the molecular pump 1. Specifically, the butterfly valve 3 is connected to the sub-cavity 4, the butterfly valve 3 is connected to the gate valve 2, and the gate valve 2 is connected to the molecular pump 1.

[0049] Specifically, the main cavity 5 is a cylindrical vacuum sealed cavity made of corrosion-resistant 316L material, and CF200 metal sealing interfaces are symmetrically arranged on the upper and lower sides for connecting the sub-cavity 4 and the inlet cavity 6 (CF represents a sealing interface standard designed specifically for vacuum systems, which is commonly found in vacuum pipe connections. A metal gasket is used to compress and seal the two CF interfaces, which has excellent corrosion resistance and can withstand high temperatures. During the thin film deposition process, the cavity part needs to be heated to 200-300°C). The side cavity 501 is used for internal cavity device maintenance and sample placement. Due to the setting of the side cavity 501, the precursor gas enters from the top, which will cause more material to be stacked on the side of the sample close to the side cavity 501, thereby affecting the thickness of the sample film close to this side and the uniformity of the film thickness of the entire sample. A needle valve 502 is installed above the side chamber 501, with its opening located near the junction between the main chamber 5 and the side chamber 501. During deposition, the needle valve 502 introduces a gas compatible with the deposition material, forming a gas shield between the main chamber 5 and the side chamber 501. This prevents precursor gas from flowing to the side near the side chamber 501 and causing significant accumulation. The opening of the side chamber 501 is connected to the chamber door via a hinge. Sealing rings are installed around the chamber door to ensure a vacuum seal when the door is closed.

[0050] An expansion interface is provided on the side of the sub-cavity 4 to connect with the butterfly valve 3. A vacuum gauge is also connected to the sub-cavity 4 to monitor the internal vacuum pressure. A radio frequency electrode is also connected to the sub-cavity 4, and the radio frequency electrode is used to connect to the conductive disk 904. The butterfly valve 3 is used to control the vacuum pressure in each vacuum cavity (the butterfly valve stably controls the pressure in the cavity by controlling the opening and closing size of the valve plate). The other side of the butterfly valve 3 is connected to the gate valve 2 to isolate the vacuum environment in each cavity and make it independent. The other side of the gate valve 2 is connected to the molecular pump 1 to achieve a higher vacuum atmosphere in the cavity, so that the vacuum in the cavity is better, there are fewer impurity gases in the cavity, and the process is more stable. The bottom of the sub-cavity 4 is sealed with a flange, and the flange is also sealed with a heating component 9, and the axial center of the heating component 9 coincides with the axial center of the sub-cavity 4.

[0051] The upper portion of the main chamber 5 is connected to the inlet chamber 6, which is connected to an inlet line 601. In addition, a pressure sensor is connected to the inlet chamber 6 to monitor the vacuum pressure within the chamber. In this solution, the vacuum in the chamber is controlled by a butterfly valve 3. Different processes require different vacuum levels. For example, during plasma cleaning, the pressure is controlled between 0.2 Pa and 2 Pa, while when introducing precursor gases for thin film deposition, the pressure is controlled between 0.1 Pa and 10 Pa.

[0052] In this embodiment, the deposition apparatus is arranged in multiple sections, from top to bottom, including a plasma generator, an inlet chamber 6, a main chamber 5, and a sub-chamber 4. Precursor gas enters through an inlet pipe 601 and flows downward toward the sample 100. Plasma flows downward from the plasma generator toward the sample 100.

[0053] When the butterfly valve 3, gate valve 2, and molecular pump 1 are opened, the vacuum in the chamber meets the process requirements. During thin film deposition, the needle valve 502 is opened to allow gas to flow in, blocking the precursor gas in the main chamber 5 and reducing material deposition near the side chamber 501.

[0054] It should be noted that the introduction chamber 6, main chamber 5, and auxiliary chamber 4 are connected via CF sealing flanges. Sealed connections are also used between the needle valve 502 and the side chamber 501, between the auxiliary chamber 4 and the vacuum gauge, between the auxiliary chamber 4 and the RF electrode, and between the introduction chamber 6 and the pressure sensor. Furthermore, sealed connections are also made between the ventilation and cooling lines in the heating assembly 9 and the components in which they are located. These sealed connections can be achieved using existing methods, such as the addition of sealing rings.

[0055] When the deposition device in this solution is used, the chamber door of the side chamber 501 is opened and the sample 100 is placed on the upper part of the heating assembly 9. The butterfly valve 3, the gate valve 2 and the molecular pump 1 are opened to evacuate the chamber to a vacuum, and the vacuum is controlled at high vacuum -5 Pa.

[0056] When cleaning the sample, a fixed flow of argon is introduced through the vent valve 708, and the cavity pressure is monitored in real time through the pressure sensor, and the pressure value in the fixed chamber is between 0.2-2pa. Since different processes require different plasma densities and intensities, the height of the coil 707 is controlled by the variable pitch module 8, and the distance of the plasma to the sample 100 is controlled to control its strength and uniformity. In addition, the distance between each turn of the coil 707 is controlled by the variable pitch module 8 to change the plasma characteristics, induction efficiency, etc., and the parameters are continuously adjusted by the variable pitch module 8 to meet the process requirements. After the position adjustment is completed, the coil 707 is connected to the RF power supply, and a high-frequency alternating magnetic field is generated around the coil 707 to generate plasma. The plasma moves freely to the sample 100 to bombard the sample for cleaning.

[0057] When thin film deposition is required, if the sample needs to be deposited at a high temperature, the sample temperature needs to be raised to the process temperature through the heating component 9, and then the precursor gas is introduced through the inlet pipe 601. The concentration of the precursor gas is determined by monitoring the pressure value of the pressure sensor, so that the sample and the precursor gas can fully react and a film is deposited on the sample surface.

[0058] In this scheme, plasma is introduced simultaneously during film deposition to enhance the reactivity of the precursor, achieve atomic-level film thickness and uniformity accuracy, and improve film performance.

[0059] The terms "installed," "disposed," "equipped with," and "connected" as used herein should be interpreted broadly. For example, they may refer to fixed connections, removable connections, or integral structures; mechanical connections or electrical connections; direct connections, indirect connections through an intermediary, or internal communication between two devices, elements, or components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0060] The above is a schematic description of the present invention and its embodiments, which is not restrictive. The drawings show only one embodiment of the present invention, and the actual structure is not limited thereto. Therefore, if a person skilled in the art is inspired by this and, without departing from the purpose of the present invention, designs a structure and embodiment similar to this technical solution without inventiveness, they shall fall within the scope of protection of the present invention.

Claims

1. A plasma generating device, characterized in that: It includes a plasma generating module (7) and a variable pitch module (8); The plasma generating module (7) comprises a reaction tube (704) and a coil (707), wherein the coil (707) is wound around the outside of the reaction tube (704); The variable pitch module (8) includes a plurality of movable sliders (801), and each coil (707) wound around the outside of the reaction tube (704) is connected to a corresponding slider (801), or a slider (801) is provided on both sides of each coil (707) wound around the outside of the reaction tube (704); When the slider (801) moves, each coil of the coil is moved, thereby changing the spacing or height of the coil (707).

2. The plasma generating device according to claim 1, wherein: The slider (801) is connected to a worm, and a plurality of spiral lead grooves are provided on the worm. Each slider (801) is connected to a corresponding spiral lead groove via a guide block. When the worm rotates, the slider (801) is driven to move in different strokes.

3. The plasma generator according to claim 1 or 2, characterized in that: One end of the reaction tube (704) is sealed and connected to the ventilation flange (709), and the other end is sealed and connected to the water cooling flange (705); The vent flange (709) is connected to a vent valve (708) for injecting source gas; The water-cooling flange (705) is provided with a flange opening (7051) that is in communication with the inner chamber of the reaction tube (704).

4. The plasma generating device according to claim 3, wherein: A connecting shielding shell (701) is sleeved on the outside of the reaction tube (704); a first opening (702) is provided on one side of the shielding shell (701) for the slider (801) to pass through; and a second opening (703) is provided on the other side for the two ends of the coil (707) to pass through. The two ends of the coil (707) extend outward from the shielding shell (701) and are connected to a clamping assembly; the clamping assembly comprises a clamping bracket (101) and two clamps (102) slidably connected to the clamping bracket (101); the two ends of the coil (707) are respectively connected to the clamps (102).

5. A plasma-enhanced atomic layer deposition apparatus, characterized in that: The plasma generating device comprises the plasma generating device according to any one of claims 1 to 4, further comprising an inlet cavity (6), a main cavity (5) and a sub-cavity (4) which are sequentially arranged at one end of the reaction tube (704) and coaxial therewith; and further comprising a heating component (9), one end of the heating component (9) being supported on one end of the sub-cavity (4), and the other end of the heating component (9) passing through the other end of the sub-cavity (4) and extending into the main cavity (5).

6. The plasma-enhanced atomic layer deposition apparatus according to claim 5, characterized in that: A heating disc (901) is provided at one end of the heating component (9) located in the main cavity (5), and an auxiliary back gas channel is provided on the upper side of the heating disc (901), the auxiliary back gas channel is connected to the main back gas channel (9011), and the main back gas channel (9011) is provided on the support rod of the heating component (9).

7. The plasma-enhanced atomic layer deposition apparatus according to claim 6, wherein: An insulating ring (903) is installed on the upper side of the heating disc (901), and a conductive disc (904) is installed on the upper side of the insulating ring (903).

8. The plasma-enhanced atomic layer deposition apparatus according to claim 5, wherein: The introduction cavity (6) is connected to an introduction pipeline (601).

9. The plasma-enhanced atomic layer deposition apparatus according to claim 5, wherein: An openable side cavity (501) is provided on one side of the main cavity (5), a needle valve (502) is installed above the side cavity (501), and an opening of the needle valve (502) is provided near the connection between the main cavity (5) and the side cavity (501).

10. The plasma-enhanced atomic layer deposition apparatus according to claim 5, wherein: One side of the secondary cavity (4) is connected in sequence to a butterfly valve (3), a gate valve (2) and a molecular pump (1).

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