Wafer and manufacturing method thereof

Abstract

The invention provides a wafer capable of improving characteristics and a method for manufacturing the same. According to an embodiment, a wafer includes a first wafer and a second wafer. The first wafer and the second wafer respectively comprise a nitride layer and a first layer. The first layer includes a crystalline first feature and an amorphous second feature. In a unit area, the first feature has a first area opposing the second nitride region. In a unit area, the second feature has a second area opposing the second nitride region. The first wafer includes a first region. The second wafer includes a second region. A first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region. The first region and the second region satisfy at least one of first to third conditions.

Description

[0001] This application is based on and claims the benefit of priority from Japanese Patent Application No. 2024-036077 (filing date: March 8, 2024), the entire contents of which are incorporated herein by reference. Technical Field

[0002] Embodiments of the present invention relate to wafers and methods of manufacturing the same. Background Art

[0003] For example, semiconductor devices are manufactured using wafers containing nitrides, and improvements in characteristics are desired for wafers. Summary of the Invention

[0004] Embodiments of the present invention provide a wafer capable of improving characteristics and a method for manufacturing the same.

[0005] According to an embodiment of the present invention, a wafer comprises a first wafer and a second wafer. The first wafer and the second wafer respectively comprise a nitride layer and a first layer. The nitride layer comprises a first nitride region and a second nitride region, and the first nitride region comprises Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2N(0<x2≤1, x1<x2). The second nitride region is provided between the first nitride region and the first layer in a first direction. The first layer includes a crystalline first component and an amorphous second component. The first component includes a first element and a second element, the first element including at least one selected from Al, Hf, and Zr, and the second element including at least one selected from oxygen and nitrogen. The first component has a first area per unit area that faces the second nitride region. The second component has a second area per unit area that faces the second nitride region. The first wafer includes a first region. The second wafer includes a second region. A first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region. The first and second regions satisfy at least one of the first, second, and third conditions. Under the first condition, the first intensity ratio is lower than the second intensity ratio. The first intensity ratio is the ratio of a first intensity of a first wavelength of 560 nm in first photoluminescent light generated by the nitride layer in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light. The second intensity ratio is a ratio of a third intensity of the first wavelength of second photoluminescent light generated by the nitride layer in the second region relative to a fourth intensity of the second wavelength of the second photoluminescent light. Under the second condition, the first photoluminescent wavelength in the nitride layer in the first region is shorter than the second photoluminescent wavelength in the nitride layer in the second region. Under the third condition, the first thickness of the second nitride region in the first region is greater than the second thickness of the second nitride region in the second region.

[0006] According to the wafer having the above structure, it is possible to provide a wafer having improved characteristics and a method for manufacturing the same. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 (a) and Figure 1 (b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0008] Figure 2 (a) and Figure 2 (b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0009] Figure 3 (a) and Figure 3 (b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0010] Figure 4 (a) and Figure 4(b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0011] Figure 5 is a schematic cross-sectional view of a wafer illustrating the first embodiment.

[0012] Figure 6 is a schematic cross-sectional view of a wafer illustrating the first embodiment.

[0013] Figure 7 (a) and Figure 7 (b) is a schematic diagram illustrating a wafer according to the second embodiment.

[0014] Figure 8 (a) and Figure 8 (b) is a schematic diagram illustrating a wafer according to the second embodiment.

[0015] Figure 9 This is a flowchart illustrating a wafer manufacturing method according to the third embodiment.

[0016] Description of Reference Numerals

[0017] 10: Nitride layer; 10B: Nitride component; 10C: Carrier region; 10S: Substrate; 10x: Structure; 11, 12: First nitride region, second nitride region; 20: First layer; 21, 22: First component, second component; 51, 52: First region, second region; 210, 210a, 210b, 211, 220, 221: Wafer; 311, 312: First wafer, second wafer; D1: First direction; PL1: First plane; t1, t2: First thickness, second thickness. DETAILED DESCRIPTION

[0018] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0019] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. may not necessarily be the same as in reality. Even when showing the same part, the size and ratio may be shown differently depending on the drawing.

[0020] In the present specification and each drawing, the same elements as those in the previously described drawings are denoted by the same reference numerals, and detailed description thereof will be appropriately omitted.

[0021] (First embodiment)

[0022] Figure 1 (a) and Figure 1 (b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0023] Figure 2 (a) and Figure 2 (b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0024] Figure 1 (a) Yes Figure 1 (b) A1-A2 line cross-sectional view. Figure 1 (b) is a top view. Figure 2 (a) Yes Figure 2 (b) Cross-sectional view along line B1-B2. Figure 2 (b) is a top view.

[0025] like Figure 1 (a) Figure 1 (b) Figure 2 (a) and Figure 2 As shown in FIG. 5( b ), the wafer 210 (eg, wafer set) according to the embodiment includes a first wafer 311 and a second wafer 312 .

[0026] The first wafer 311 and the second wafer 312 respectively include a nitride layer 10 and a first layer 20. The nitride layer 10 includes a first nitride region 11 and a second nitride region 12.

[0027] The first nitride region 11 includes Al x1 Ga 1-x1 N (0≤x1<1). The composition ratio x1 may be, for example, not less than 0 and not more than 0.13. The first nitride region 11 is, for example, a GaN layer.

[0028] The second nitride region 12 includes Al x2 Ga 1-x2 N(0<x2≤1, x1<x2). The composition ratio x2 may be, for example, 0.15 or more and 0.35 or less. The second nitride region 12 is, for example, an AlGaN layer. The second nitride region 12 is provided between the first nitride region 11 and the first layer 20 in the first direction D1.

[0029] The first direction D1 is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction. The first nitride region 11 and the second nitride region 12 are layered and substantially parallel to the XY plane.

[0030] like Figure 1 (a) and Figure 2 As shown in (a), the first nitride region 11 includes a portion facing the second nitride region 12. A carrier region 10C is formed in this portion. The carrier region 10C is, for example, a two-dimensional electron gas. The semiconductor device based on the wafer 210 utilizes the carrier region 10C.

[0031] The first layer 20 includes a crystalline first component 21 and an amorphous second component 22 . Figure 1 (b) and Figure 2 (b) shows an example of the pattern of the first members 21 and the second members 22. The first members 21 and the second members 22 are arranged in a first plane PL1 intersecting the first direction D1.

[0032] In this example, the first member 21 comprises a first material. The first material comprises a first element comprising at least one selected from the group consisting of Al, Hf, and Zr, and a second element comprising at least one selected from the group consisting of oxygen and nitrogen. When the first member 21 comprises this first material, the first member 21 increases the carrier density in the nitride layer 10.

[0033] In one example, the first component 21 may also include Al x3 Ga 1-x3 N (x2<x3≤1). The composition ratio x3 may be, for example, 0.85 or more and 1 or less. The first member 21 may include, for example, AlN.

[0034] The first component 21 has a first area S1 per unit area that faces the second nitride region 12. The second component 22 has a second area S2 per unit area that faces the second nitride region 12. For example, the first component 21 may be in contact with the second nitride region 12. The first area S1 per unit area is the area of ​​the portion of the first component 21 that faces the second nitride region 12 per unit area. For example, the second component 22 may be in contact with the second nitride region 12. The second area S2 per unit area is the area of ​​the portion of the second component 22 that faces the second nitride region 12 per unit area.

[0035] Figure 1 In the example shown in (b), the first area S1 is Figure 2 In the example shown in (b), the second area S2 is large.

[0036] The first wafer 311 includes a first region 51. The second wafer 312 includes a second region 52. A first ratio of the first area S1 to the second area S2 in the first region 51 is lower than a second ratio of the first area S1 to the second area S2 in the second region 52.

[0037] In the embodiment, the first region 51 and the second region 52 satisfy at least any one of the following first condition, second condition, and third condition.

[0038] Under the first condition, the first intensity ratio R1 is lower than the second intensity ratio R2. The first intensity ratio R1 is the ratio of the first intensity of the first wavelength λ1 of 560 nm in the first photoluminescent light obtained by the nitride layer 10 included in the first region 51 to the second intensity of the second wavelength λ2 of 350 nm in the first photoluminescent light.

[0039] The second intensity ratio R2 is a ratio of the third intensity of the first wavelength λ1 of the second photoluminescent light obtained by the nitride layer 10 included in the second region 52 to the fourth intensity of the second wavelength λ2 of the second photoluminescent light.

[0040] The first wavelength λ1 of 560 nm corresponds to, for example, the yellow light emission of GaN. The second wavelength λ2 of 350 nm corresponds to, for example, the wavelength of light emission near the band edge of GaN. For example, when the ratio of the intensity of the first wavelength λ1 to the intensity of the second wavelength λ2 is high, the carrier density in the nitride layer 10 is low. For example, when the ratio of the intensity of the first wavelength λ1 to the intensity of the second wavelength λ2 is low, the carrier density in the nitride layer 10 is high. The first condition corresponds to a state where the carrier density in the first region 51 is higher than the carrier density in the second region 52.

[0041] Under the second condition, the first photoluminescence wavelength of the nitride layer 10 included in the first region 51 is shorter than the second photoluminescence wavelength of the nitride layer 10 included in the second region 52 .

[0042] When the photoluminescence wavelength is long, the carrier density is low. When the photoluminescence wavelength is short, the carrier density is high. The second condition corresponds to a state where the carrier density in the first region 51 is higher than the carrier density in the second region 52.

[0043] Under the third condition, the first thickness t1 of the second nitride region 12 included in the first region 51 (see Figure 1 (a)) is greater than the second thickness t2 of the second nitride region 12 included in the second region 52 (see Figure 2 (a)) thicker.

[0044] When first member 21 includes at least the first material described above, if second nitride region 12 is thin, the carrier density is low. If second nitride region 12 is thick, the carrier density is high. The third condition corresponds to a state where the carrier density in first region 51 is higher than the carrier density in second region 52.

[0045] Thus, when the carrier density in the first region 51 is higher than the carrier density in the second region 52 (the first to third conditions), the first ratio of the first area S1 to the second area S2 in the first region 51 is lower than the second ratio of the first area S1 to the second area S2 in the second region 52. This first layer 20 corrects the unevenness of the carrier density in the nitride layer 10. For example, the carrier density is uniform in the first region 51 (first wafer 311) and the second region 52 (second wafer 312). This allows for the provision of wafers (e.g., wafer stacks) with improved characteristics.

[0046] In embodiments, the difference in carrier density between two regions (two wafers) can be reduced. In embodiments, the carrier density in one region can also be corrected to a target value. For example, the carrier density in the first region 51 can be corrected to a target value. The carrier density in the second region 52 can also be corrected to a target value.

[0047] The first wafer 311 and the second wafer 312 may be included in different manufacturing batches, for example. The first wafer 311 and the second wafer 312 may be included in one manufacturing batch, for example. For example, the first wafer 311 and the second wafer 312 may be included in a group including multiple wafers.

[0048] In an embodiment, the first thickness t1 and the second thickness t2 may be values ​​obtained by X-ray reflectivity measurement. This allows for more accurate thickness measurements. For example, the first thickness t1 may be thicker when the X-ray reflection intensity is high than when the X-ray reflection intensity is low. For example, the second thickness t2 may be thicker when the X-ray reflection intensity is high than when the X-ray reflection intensity is low.

[0049] In an embodiment, the second member 22 may include, for example, silicon and at least one selected from nitrogen and oxygen.

[0050] like Figure 1 (a) and Figure 2 As shown in (a), a plurality of first members 21 may be provided. One of the plurality of first members 21 is provided between a portion of the second member 22 and another portion of the second member 22.

[0051] A plurality of second components 22 may be provided. One of the plurality of second components 22 is provided between a portion of the first component 21 and another portion of the first component 21 .

[0052] A plurality of first components 21 and a plurality of second components 22 may be provided. One of the plurality of first components 21 may be provided between one of the plurality of second components 22 and another of the plurality of second components 22. One of the plurality of second components 22 may be provided between one of the plurality of first components 21 and another of the plurality of first components 21.

[0053] One of the plurality of first components 21 may be in the shape of dots, stripes, or a combination of dots and stripes. One of the plurality of second components 22 may be in the shape of dots, stripes, or a combination of dots and stripes. The first components 21 and the second components 22 may also be in the shape of comb teeth.

[0054] like Figure 1 (a) and Figure 1 As shown in FIG. 2( b ), the wafer 210 (first wafer 311 and second wafer 312 ) may further include a substrate 10S and a nitride component 10B. The nitride component 10B is disposed on the substrate 10S. The first nitride region 11 is disposed on the nitride component 10B. The second nitride region 12 is disposed on the first nitride region 11. The first layer 20 is disposed on the second nitride region 12. The substrate 10S may be, for example, a silicon substrate. The nitride component 10B may contain Al, Ga, and N. The nitride component 10B may be, for example, a buffer layer. The nitride layer 10 may be included in a structure 10x. The structure 10x may include the substrate 10S and the nitride component 10B.

[0055] Figure 3 (a) and Figure 3 (b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0056] Figure 4 (a) and Figure 4 (b) is a schematic diagram illustrating a wafer according to the first embodiment.

[0057] Figure 3 (a) Yes Figure 3 (b) A1-A2 line cross-sectional view. Figure 3 (b) is a top view. Figure 4 (a) Yes Figure 4 (b) Cross-sectional view along line B1-B2. Figure 4 (b) is a top view.

[0058] like Figure 3 (a) Figure 3 (b) Figure 4 (a) and Figure 4As shown in (b), the wafer 211 of the embodiment includes a first wafer 311 and a second wafer 312. In the wafer 211, the second material includes Ga and nitrogen. The second material may be, for example, GaN. The second material may also include at least one of Mg, Zn, and C. The second material may be, for example, p-type (p-type GaN). In the wafer 211, the first ratio of the first area S1 to the second area S2 in the first region 51 is higher than the second ratio of the first area S1 to the second area S2 in the second region 52. The structure of the wafer 211 can be the same as that of the wafer 210 except for this.

[0059] When the first member 21 includes the second material, the carrier density in the nitride layer 10 is reduced by the first member 21 .

[0060] In this case, the first region 51 and the second region 52 also satisfy at least one of the first condition, the second condition, and the third condition.

[0061] As described above, under the first condition, the first intensity ratio R1 is higher than the second intensity ratio R2. The first intensity ratio R1 is the ratio of the first intensity of the first wavelength λ1 of 560 nm in the first photoluminescent light obtained from the nitride layer 10 included in the first region 51 to the second intensity of the second wavelength λ2 of 350 nm in the first photoluminescent light. The second intensity ratio R2 is the ratio of the third intensity of the first wavelength λ1 of the second photoluminescent light obtained from the nitride layer 10 included in the second region 52 to the fourth intensity of the second wavelength λ2 of the second photoluminescent light.

[0062] Under the second condition, the first photoluminescence wavelength of the nitride layer 10 contained in the first region 51 is longer than the second photoluminescence wavelength of the nitride layer 10 contained in the second region 52. Under the third condition, the first thickness t1 of the second nitride region 12 contained in the first region 51 is thinner than the second thickness t2 of the second nitride region 12 contained in the second region 52. The first to third conditions correspond to a state where the carrier density in the first region 51 is lower than the carrier density in the second region 52.

[0063] In this case, by reducing the area of ​​the first component 21 containing the second material (p-type GaN), the carrier density can be relatively increased. For example, the first ratio of the first area S1 to the second area S2 in the first region 51 is set higher than the second ratio of the first area S1 to the second area S2 in the second region 52. This first layer 20 corrects the unevenness of the carrier density in the nitride layer 10. For example, the carrier density is uniform in the first region 51 (first wafer 311) and the second region 52 (second wafer 312). This allows for the provision of a wafer with improved characteristics.

[0064] Figure 5 and Figure 6 is a schematic cross-sectional view of a wafer illustrating the first embodiment.

[0065] like Figure 5 As shown, in the wafer 210a of the embodiment, at least a portion of the second component 22 is located between the second nitride region 12 and a portion of the first component 21. Figure 6 As shown, in the wafer 210b of the embodiment, at least a portion of the first member 21 is located between the second nitride region 12 and a portion of the second member 22. Such a structure can be applied to the wafer 210 and the wafer 211.

[0066] (Second embodiment)

[0067] Figure 7 (a) and Figure 7 (b) is a schematic diagram illustrating a wafer according to the second embodiment.

[0068] Figure 7 (a) Yes Figure 7 (b) A1-A2 line cross-sectional view. Figure 7 (b) is a top view.

[0069] The wafer 220 of the embodiment includes a nitride layer 10 and a first layer 20. The nitride layer 10 includes a first nitride region 11 including Al x1 Ga 1-x1 N (0≤x1<1); and the second nitride region 12, which contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2).

[0070] The second nitride region 12 is disposed between the first nitride region 11 and the first layer 20 in the first direction D1 .

[0071] The first layer 20 includes a crystalline first component 21 and an amorphous second component 22. In this example, the first component 21 comprises a first material. As already described, the first material comprises a first element and a second element. The first element comprises at least one selected from Al, Hf, and Zr, and the second element comprises at least one selected from oxygen and nitrogen.

[0072] The first member 21 has a first area S1 per unit area facing the second nitride region 12. The second member 22 has a second area S2 per unit area facing the second nitride region 12.

[0073] In the second embodiment, the nitride layer 10 includes a first region 51 and a second region 52. In the second embodiment, the first region 51 and the second region 52 are provided on a single wafer 220. The first region 51 and the second region 52 are arranged in a first plane PL1 intersecting a first direction D1. A first ratio of a first area S1 to a second area S2 in the first region 51 is lower than a second ratio of the first area S1 to the second area S2 in the second region 52.

[0074] The first region 51 and the second region 52 satisfy at least one of the first condition, the second condition, and the third condition.

[0075] As described above, under the first condition, the first intensity ratio R1 is lower than the second intensity ratio R2. The first intensity ratio R1 is the ratio of the first intensity of the first wavelength λ1 of 560 nm in the first photoluminescent light obtained from the nitride layer 10 included in the first region 51 to the second intensity of the second wavelength λ2 of 350 nm in the first photoluminescent light. The second intensity ratio R2 is the ratio of the third intensity of the first wavelength λ1 of the second photoluminescent light obtained from the nitride layer 10 included in the second region 52 to the fourth intensity of the second wavelength λ2 of the second photoluminescent light.

[0076] Under the second condition, the first photoluminescence wavelength of the nitride layer 10 included in the first region 51 is shorter than the second photoluminescence wavelength of the nitride layer 10 included in the second region 52 .

[0077] Under the third condition, the first thickness t1 of the second nitride region 12 included in the first region 51 is thicker than the second thickness t2 of the second nitride region 12 included in the second region 52 .

[0078] When at least one of the first to third conditions is satisfied, a first ratio of the first area S1 to the second area S2 in the first region 51 is higher than a second ratio of the first area S1 to the second area S2 in the second region 52. This allows, for example, correction of the carrier density in a single wafer 220. Also in the second embodiment, a wafer with improved characteristics can be provided.

[0079] In an embodiment, the second region 52 may be provided around the first region 51. Alternatively, the first region 51 may be provided around the second region 52. The first region 51 and the second region 52 may be any region in the wafer 220.

[0080] In the wafer 220, the first component 21 may include Al x3 Ga 1-x3 N(x2<x3≤1).

[0081] Figure 8 (a) and Figure 8 (b) is a schematic diagram illustrating a wafer according to the second embodiment.

[0082] Figure 8 (a) Yes Figure 8 (b) A1-A2 line cross-sectional view. Figure 8 (b) is a top view.

[0083] In the embodiment of wafer 221, the second material in wafer 221 includes Ga and nitrogen. The second material may be, for example, GaN. The second material may also include at least one of Mg, Zn, and C. The second material may be, for example, p-type (p-type GaN). In wafer 221, the first ratio of the first area S1 to the second area S2 in the first region 51 is lower than the second ratio of the first area S1 to the second area S2 in the second region 52. The structure of wafer 221 otherwise may be the same as that of wafer 220.

[0084] When the first member 21 includes the second material, the carrier density in the nitride layer 10 is reduced by the first member 21 .

[0085] In this case, the first region 51 and the second region 52 also satisfy at least one of the first condition, the second condition, and the third condition.

[0086] When at least one of the first to third conditions is satisfied, the first ratio of the first area S1 to the second area S2 in the first region 51 is lower than the second ratio of the first area S1 to the second area S2 in the second region 52. This allows, for example, correction of the carrier density in a single wafer 221. Even in the second embodiment, a wafer with improved characteristics can be provided.

[0087] In an embodiment, the second region 52 may be provided around the first region 51. Alternatively, the first region 51 may be provided around the second region 52. The first region 51 and the second region 52 may be any regions in the wafer 221.

[0088] (Third embodiment)

[0089] Figure 9 This is a flowchart illustrating a wafer manufacturing method according to the third embodiment.

[0090] like Figure 9 As shown, in the wafer manufacturing method of the embodiment, a structure 10 x including a nitride layer 10 is prepared (step S110 ).

[0091] The nitride layer 10 includes a first nitride region 11 and a second nitride region 12. The first nitride region 11 includes Al x1 Ga1-x1 N (0≤x1<1). The second nitride region 12 is provided on the first nitride region 11. The second nitride region 12 includes Al x2 Ga 1-x2 N(0<x2≤1, x1<x2).

[0092] The first layer 20 is formed on the second nitride region 12 (step S120 ). The first layer 20 includes a crystalline first portion 21 and an amorphous second portion 22 .

[0093] In the embodiment, the processing conditions of at least one of the first component 21 and the second component 22 are changed based on at least one of the first information, the second information, and the third information.

[0094] The first information includes the intensity ratio of a first intensity of a first wavelength λ1 of 560 nm in the photoluminescent light obtained from the nitride layer 10 to a second intensity of a second wavelength λ2 of 350 nm in the photoluminescent light. The second information includes the photoluminescent wavelength of the nitride layer 10. The third information includes the thickness of the second nitride region 12.

[0095] As already described, the first information, the second information, and the third information include information related to the carrier density in the nitride layer 10 .

[0096] The processing conditions are changed based on such information. The processing conditions may include at least one of exposure conditions and etching conditions.

[0097] In one example, a film serving as the first member 21 is formed on the second nitride region 12. This film is processed to form the first member 21. Processing is performed using photolithography and etching. By varying the conditions of these processes, the shape (size, area, etc.) of the first member 21 can be modified. The second member 22 can be formed between or on the processed first members 21.

[0098] In one example, a film serving as the second member 22 is formed on the second nitride region 12. This film is processed to form the second member 22. Processing is performed by photolithography and etching. By changing the conditions of these processes, the shape (size, area, etc.) of the second member 22 can be changed. The first member 21 can be formed between the processed second members 22.

[0099] By using such a method, the difference in area ratio between the first region 51 and the second region 52 can be obtained.

[0100] In the third embodiment, the first member 21 has a first area S1 per unit area facing the second nitride region 12. The second member 22 has a second area S2 per unit area facing the second nitride region 12. The ratio of the first area S1 to the second area S2 is controlled by the processing conditions.

[0101] For example, the first member 21 includes a first material. The first material includes a first element including at least one selected from Al, Hf, and Zr, and a second element including at least one selected from oxygen and nitrogen.

[0102] The first information, second information, and third information described above can have the following first or second states: The intensity ratio in the first state is lower than the intensity ratio in the second state. The photoluminescence wavelength in the first state is shorter than the photoluminescence wavelength in the second state. The thickness of the second nitride region 12 in the first state is thicker than the thickness of the second nitride region 12 in the second state. In this manner, the ratio of the first area S1 to the second area S2 in the first state is lower than the ratio of the first area S1 to the second area S2 in the second state. For example, unevenness or variations in carrier concentration can be corrected.

[0103] On the other hand, the first component 21 may also include a second material. The second material includes Ga and nitrogen. The second material may also include at least one of Mg, Zn, and C. When the first component 21 includes such a first material, the processing conditions can be controlled as follows. The intensity ratio in the first state is higher than the intensity ratio in the second state. The photoluminescence wavelength in the first state is longer than the photoluminescence wavelength in the second state. The thickness of the second nitride region 12 in the first state is thinner than the thickness of the second nitride region 12 in the second state. In this manner, the ratio of the first area S1 to the second area S2 in the first state is higher than the ratio of the first area S1 to the second area S2 in the second state. For example, unevenness or deviation in carrier concentration can be corrected.

[0104] In an embodiment, a processing condition may be changed between one of the plurality of wafers and another of the plurality of wafers.

[0105] In the embodiment, processing conditions may be changed in the first region 51 within the wafer surface and the second region 52 within the wafer surface. When the first region 51 and the second region 52 are provided within the surface of a single wafer, exposure conditions may be changed for each exposure shot.

[0106] Implementation methods may include the following technical solutions.

[0107] (Technical Solution 1)

[0108] A wafer comprising a first wafer and a second wafer,

[0109] The first wafer and the second wafer respectively comprise a nitride layer and a first layer,

[0110] The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2),

[0111] The second nitride region is disposed between the first nitride region and the first layer in a first direction,

[0112] The first layer comprises a crystalline first component and an amorphous second component,

[0113] The first component includes a first element and a second element, the first element includes at least one selected from Al, Hf, and Zr, and the second element includes at least one selected from oxygen and nitrogen.

[0114] In unit area, the first component has a first area opposite to the second nitride region,

[0115] In the unit area, the second component has a second area opposite to the second nitride region,

[0116] The first wafer comprises a first region,

[0117] The second wafer comprises a second region,

[0118] a first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region,

[0119] The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition,

[0120] Under the first condition, the first intensity ratio is lower than the second intensity ratio,

[0121] The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light.

[0122] The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength.

[0123] Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is shorter than a second photoluminescence wavelength of the nitride layer included in the second region.

[0124] Under the third condition, a first thickness of the second nitride region included in the first region is thicker than a second thickness of the second nitride region included in the second region.

[0125] (Technical Solution 2)

[0126] A wafer comprising a first wafer and a second wafer,

[0127] The first wafer and the second wafer respectively comprise a nitride layer and a first layer,

[0128] The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2),

[0129] The second nitride region is disposed between the first nitride region and the first layer in a first direction,

[0130] The first layer comprises a crystalline first component and an amorphous second component,

[0131] The first component comprises Ga and nitrogen,

[0132] In unit area, the first component has a first area opposite to the second nitride region,

[0133] In the unit area, the second component has a second area opposite to the second nitride region,

[0134] The first wafer comprises a first region,

[0135] The second wafer comprises a second region,

[0136] a first ratio of the first area to the second area in the first region is higher than a second ratio of the first area to the second area in the second region,

[0137] The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition,

[0138] Under the first condition, the first intensity ratio is higher than the second intensity ratio,

[0139] The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light.

[0140] The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength.

[0141] Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is longer than a second photoluminescence wavelength of the nitride layer included in the second region.

[0142] Under the third condition, a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

[0143] (Technical Solution 3)

[0144] A wafer comprising a nitride layer and a first layer,

[0145] The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2),

[0146] The second nitride region is disposed between the first nitride region and the first layer in a first direction,

[0147] The first layer comprises a crystalline first component and an amorphous second component,

[0148] The first component includes a first element and a second element, the first element includes at least one selected from Al, Hf, and Zr, and the second element includes at least one selected from oxygen and nitrogen.

[0149] In unit area, the first component has a first area opposite to the second nitride region,

[0150] In the unit area, the second component has a second area opposite to the second nitride region,

[0151] The nitride layer includes a first region and a second region,

[0152] The first region and the second region are arranged in a first plane intersecting the first direction,

[0153] a first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region,

[0154] The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition,

[0155] Under the first condition, the first intensity ratio is lower than the second intensity ratio,

[0156] The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light.

[0157] The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength.

[0158] Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is shorter than a second photoluminescence wavelength of the nitride layer included in the second region.

[0159] Under the third condition, a first thickness of the second nitride region included in the first region is thicker than a second thickness of the second nitride region included in the second region.

[0160] (Technical Solution 4)

[0161] The chip according to Technical Solution 3, wherein the second region is arranged around the first region, or the first region is arranged around the second region.

[0162] (Technical Solution 5)

[0163] The wafer according to technical solution 3 or 4, wherein the first component comprises Al x3 Ga 1-x3 N(x2<x3≤1).

[0164] (Technical Solution 6)

[0165] A wafer comprising a nitride layer and a first layer,

[0166] The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2),

[0167] The second nitride region is disposed between the first nitride region and the first layer in a first direction,

[0168] The first layer comprises a crystalline first component and an amorphous second component,

[0169] The first component comprises Ga and nitrogen,

[0170] In unit area, the first component has a first area opposite to the second nitride region,

[0171] In the unit area, the second component has a second area opposite to the second nitride region,

[0172] The nitride layer includes a first region and a second region,

[0173] The first region and the second region are arranged in a first plane intersecting the first direction,

[0174] a first ratio of the first area to the second area in the first region is higher than a second ratio of the first area to the second area in the second region,

[0175] The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition,

[0176] Under the first condition, the first intensity ratio is higher than the second intensity ratio,

[0177] The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light.

[0178] The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength.

[0179] Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is longer than a second photoluminescence wavelength of the nitride layer included in the second region.

[0180] Under the third condition, a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

[0181] (Technical Solution 7)

[0182] The chip according to Technical Solution 6, wherein the second area is arranged around the first area, or the first area is arranged around the second area.

[0183] (Technical Solution 8)

[0184] The wafer according to any one of technical solutions 1 to 7, wherein the first thickness and the second thickness are values ​​obtained by X-ray reflectivity measurement.

[0185] (Technical Solution 9)

[0186] The wafer according to any one of technical solutions 1 to 8, wherein the first component and the second component are in contact with the second nitride region.

[0187] (Technical Solution 10)

[0188] The wafer according to any one of claims 1 to 9, wherein the second member contains silicon and at least one selected from nitrogen and oxygen.

[0189] (Technical Solution 11)

[0190] The wafer according to any one of technical solutions 1 to 10, wherein at least a portion of the second component is located between the second nitride region and a portion of the first component.

[0191] (Technical Solution 12)

[0192] The wafer according to any one of technical solutions 1 to 10, wherein at least a portion of the first component is located between the second nitride region and a portion of the second component.

[0193] (Technical Solution 13)

[0194] The wafer according to any one of technical solutions 1 to 12, wherein a plurality of the first components are provided, and one of the plurality of the first components is provided between a portion of the second component and another portion of the second component.

[0195] (Technical Solution 14)

[0196] The wafer according to any one of technical solutions 1 to 12, wherein a plurality of second components are provided, and one of the plurality of second components is provided between a portion of the first component and another portion of the first component.

[0197] (Technical Solution 15)

[0198] A method for manufacturing a wafer, comprising:

[0199] A structure including a nitride layer is prepared, wherein the nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region is disposed on the first nitride region and comprises Al x2 Ga 1-x2 N(0<x2≤1, x1<x2), and

[0200] forming a first layer on the second nitride region, the first layer including a crystalline first component and an amorphous second component, and changing processing conditions of at least one of the first component and the second component based on at least one of first information, second information, and third information;

[0201] The first information includes an intensity ratio of a first intensity of a first wavelength of 560 nm in the photoluminescent light obtained from the nitride layer to a second intensity of a second wavelength of 350 nm in the photoluminescent light.

[0202] The second information includes the photoluminescence wavelength of the nitride layer.

[0203] The third information includes the thickness of the second nitride region.

[0204] (Technical Solution 16)

[0205] The method for manufacturing a chip according to Technical Solution 15, wherein the processing conditions include at least any one of exposure conditions and etching conditions.

[0206] (Technical Solution 17)

[0207] The wafer manufacturing method according to Technical Solution 15 or 16, wherein, per unit area, the first component has a first area opposite to the second nitride region,

[0208] In the unit area, the second component has a second area opposite to the second nitride region,

[0209] The first component includes a first element and a second element, the first element includes at least one selected from Al, Hf, and Zr, and the second element includes at least one selected from oxygen and nitrogen.

[0210] The intensity ratio in the first state is lower than the intensity ratio in the second state,

[0211] The photoluminescence wavelength in the first state is shorter than the photoluminescence wavelength in the second state,

[0212] The thickness in the first state is thicker than the thickness in the second state,

[0213] A ratio of the first area to the second area in the first state is lower than a ratio of the first area to the second area in the second state.

[0214] (Technical Solution 18)

[0215] The wafer manufacturing method according to Technical Solution 15 or 16, wherein, per unit area, the first component has a first area opposite to the second nitride region,

[0216] In the unit area, the second component has a second area opposite to the second nitride region,

[0217] The first component comprises Ga and nitrogen,

[0218] The intensity ratio in the first state is higher than the intensity ratio in the second state,

[0219] The photoluminescence wavelength in the first state is longer than the photoluminescence wavelength in the second state,

[0220] The thickness in the first state is thinner than the thickness in the second state,

[0221] A ratio of the first area to the second area in the first state is higher than a ratio of the first area to the second area in the second state.

[0222] (Technical Solution 19)

[0223] The wafer manufacturing method according to any one of technical solutions 15 to 18, wherein the processing conditions are changed between one wafer among the plurality of wafers and another wafer among the plurality of wafers.

[0224] (Technical Solution 20)

[0225] The wafer manufacturing method according to any one of technical solutions 15 to 18, wherein the processing conditions are changed in a first region within the surface of the wafer and a second region within the surface of the wafer.

[0226] According to the embodiment, a wafer having improved characteristics and a method for manufacturing the same can be provided.

[0227] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the various elements included in the wafer, such as the nitride layer, nitride region, layer, component, and substrate, are encompassed within the scope of the present invention as long as those skilled in the art can appropriately select from the known ranges and implement the present invention in the same manner and achieve the same effects.

[0228] Furthermore, any embodiment obtained by combining any two or more elements of each specific example within a technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

[0229] Furthermore, all wafers and methods of manufacturing the same that can be implemented by those skilled in the art by appropriately changing the design based on the wafers and methods of manufacturing the same as the embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0230] Furthermore, within the scope of the concept of the present invention, those skilled in the art can conceive of various changes and modifications, and these changes and modifications also fall within the scope of the present invention.

[0231] While several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These new embodiments may be implemented in various other ways, and various omissions, substitutions, and modifications may be made without departing from the spirit of the invention. These embodiments and their variations are intended to be within the scope and spirit of the invention and are encompassed by the invention as set forth in the claims and their equivalents.

Claims

1. A wafer comprising a first wafer and a second wafer, The first wafer and the second wafer respectively comprise a nitride layer and a first layer, The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2), The second nitride region is disposed between the first nitride region and the first layer in a first direction, The first layer comprises a crystalline first component and an amorphous second component, The first component includes a first element and a second element, the first element includes at least one selected from Al, Hf, and Zr, and the second element includes at least one selected from oxygen and nitrogen. In unit area, the first component has a first area opposite to the second nitride region, In the unit area, the second component has a second area opposite to the second nitride region, The first wafer comprises a first region, The second wafer comprises a second region, a first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region, The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition, Under the first condition, the first intensity ratio is lower than the second intensity ratio, The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light. The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength. Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is shorter than a second photoluminescence wavelength of the nitride layer included in the second region. Under the third condition, a first thickness of the second nitride region included in the first region is thicker than a second thickness of the second nitride region included in the second region.

2. A wafer comprising a first wafer and a second wafer, The first wafer and the second wafer respectively comprise a nitride layer and a first layer, The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2), The second nitride region is disposed between the first nitride region and the first layer in a first direction, The first layer comprises a crystalline first component and an amorphous second component, The first component comprises Ga and nitrogen, In unit area, the first component has a first area opposite to the second nitride region, In the unit area, the second component has a second area opposite to the second nitride region, The first wafer comprises a first region, The second wafer comprises a second region, a first ratio of the first area to the second area in the first region is higher than a second ratio of the first area to the second area in the second region, The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition, Under the first condition, the first intensity ratio is higher than the second intensity ratio, The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light. The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength. Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is longer than a second photoluminescence wavelength of the nitride layer included in the second region. Under the third condition, a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

3. A wafer comprising a nitride layer and a first layer, The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2), The second nitride region is disposed between the first nitride region and the first layer in a first direction, The first layer comprises a crystalline first component and an amorphous second component, The first component includes a first element and a second element, the first element includes at least one selected from Al, Hf, and Zr, and the second element includes at least one selected from oxygen and nitrogen. In unit area, the first component has a first area opposite to the second nitride region, In the unit area, the second component has a second area opposite to the second nitride region, The nitride layer includes a first region and a second region, The first region and the second region are arranged in a first plane intersecting the first direction, a first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region, The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition, Under the first condition, the first intensity ratio is lower than the second intensity ratio, The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light. The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength. Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is shorter than a second photoluminescence wavelength of the nitride layer included in the second region. Under the third condition, a first thickness of the second nitride region included in the first region is thicker than a second thickness of the second nitride region included in the second region.

4. The wafer according to claim 3, wherein The second area is arranged around the first area, or the first area is arranged around the second area.

5. The wafer according to claim 3 or 4, wherein The first component comprises Al x3 Ga 1-x3 N(x2<x3≤1).

6. A wafer comprising a nitride layer and a first layer, The nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region contains Al x2 Ga 1-x2 N(0<x2≤1, x1<x2), The second nitride region is disposed between the first nitride region and the first layer in a first direction, The first layer comprises a crystalline first component and an amorphous second component, The first component comprises Ga and nitrogen, In unit area, the first component has a first area opposite to the second nitride region, In the unit area, the second component has a second area opposite to the second nitride region, The nitride layer includes a first region and a second region, The first region and the second region are arranged in a first plane intersecting the first direction, a first ratio of the first area to the second area in the first region is higher than a second ratio of the first area to the second area in the second region, The first region and the second region satisfy at least any one of a first condition, a second condition, and a third condition, Under the first condition, the first intensity ratio is higher than the second intensity ratio, The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in the first photoluminescent light obtained by the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light. The second intensity ratio is a ratio of a third intensity of the second photoluminescent light of the first wavelength obtained by the nitride layer included in the second region to a fourth intensity of the second photoluminescent light of the second wavelength. Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is longer than a second photoluminescence wavelength of the nitride layer included in the second region. Under the third condition, a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

7. The wafer according to claim 6, wherein The second area is arranged around the first area, or the first area is arranged around the second area.

8. The wafer according to any one of claims 1 to 7, wherein The first thickness and the second thickness are values ​​obtained by X-ray reflectivity measurement.

9. The wafer according to any one of claims 1 to 8, wherein The first component and the second component are in contact with the second nitride region.

10. The wafer according to any one of claims 1 to 9, wherein The second member contains silicon and at least one selected from nitrogen and oxygen.

11. The wafer according to any one of claims 1 to 10, wherein At least a portion of the second component is located between the second nitride region and a portion of the first component.

12. The wafer according to any one of claims 1 to 10, wherein At least a portion of the first component is located between the second nitride region and a portion of the second component.

13. The wafer according to any one of claims 1 to 12, wherein A plurality of the first components are provided, One of the plurality of first components is disposed between a portion of the second component and another portion of the second component.

14. The wafer according to any one of claims 1 to 12, wherein A plurality of the second components are provided, One of the plurality of second components is disposed between a portion of the first component and another portion of the first component.

15. A method for manufacturing a wafer, comprising: A structure including a nitride layer is prepared, wherein the nitride layer includes a first nitride region and a second nitride region, wherein the first nitride region includes Al x1 Ga 1-x1 N (0≤x1<1), the second nitride region is disposed on the first nitride region and comprises Al x2 Ga 1-x2 N(0<x2≤1, x1<x2), and forming a first layer on the second nitride region, the first layer including a crystalline first component and an amorphous second component, and changing processing conditions of at least one of the first component and the second component based on at least one of first information, second information, and third information; The first information includes an intensity ratio of a first intensity of a first wavelength of 560 nm in the photoluminescent light obtained from the nitride layer to a second intensity of a second wavelength of 350 nm in the photoluminescent light. The second information includes the photoluminescence wavelength of the nitride layer. The third information includes the thickness of the second nitride region.

16. The method for manufacturing a wafer according to claim 15, wherein: The processing conditions include at least one of exposure conditions and etching conditions.

17. The method for manufacturing a wafer according to claim 15 or 16, wherein: In unit area, the first component has a first area opposite to the second nitride region, In the unit area, the second component has a second area opposite to the second nitride region, The first component includes a first element and a second element, the first element includes at least one selected from Al, Hf, and Zr, and the second element includes at least one selected from oxygen and nitrogen. The intensity ratio in the first state is lower than the intensity ratio in the second state, The photoluminescence wavelength in the first state is shorter than the photoluminescence wavelength in the second state, The thickness in the first state is thicker than the thickness in the second state, A ratio of the first area to the second area in the first state is lower than a ratio of the first area to the second area in the second state.

18. The method for manufacturing a wafer according to claim 15 or 16, wherein: In unit area, the first component has a first area opposite to the second nitride region, In the unit area, the second component has a second area opposite to the second nitride region, The first component comprises Ga and nitrogen, The intensity ratio in the first state is higher than the intensity ratio in the second state, The photoluminescence wavelength in the first state is longer than the photoluminescence wavelength in the second state, The thickness in the first state is thinner than the thickness in the second state, A ratio of the first area to the second area in the first state is higher than a ratio of the first area to the second area in the second state.

19. The method for manufacturing a wafer according to any one of claims 15 to 18, wherein: The processing conditions are changed between one wafer among the plurality of wafers and another wafer among the plurality of wafers.

20. The method for manufacturing a wafer according to any one of claims 15 to 18, wherein: The processing conditions are changed in a first region within a wafer surface and a second region within the wafer surface.

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