Bimodal sensitive memristor based on peptidyl material and preparation method thereof

Abstract

The invention relates to the technical field of resistance devices, in particular to a bimodal sensitive memristor based on a peptidyl material and a preparation method of the bimodal sensitive memristor, and the bimodal sensitive memristor comprises a bottom electrode layer, a top electrode layer and a dielectric layer clamped between the bottom electrode layer and the top electrode layer; the material of the dielectric layer is self-assembled oligopeptide, and the self-assembled oligopeptide is composed of at least three amino acids. Through the piezoelectric effect and the humidity sensitive characteristic of the self-assembled oligopeptide, the cooperative regulation and control of pressure and humidity double fields on the threshold voltage and the storage characteristic of the device are realized. The piezoelectric effect of the dielectric layer induces an internal polarization electric field under external pressure, and the migration barrier of metal ions in the electrode layer is changed, so that the threshold voltage of the device is dynamically adjusted. The rate of oxidizing metal in the anode into metal ions and migration activation energy are influenced by the change of environment humidity by regulating and controlling the moisture absorption expansion degree of the dielectric layer, and accurate control over the operation voltage and the data retention time is further achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of resistor devices, and in particular to a dual-mode sensitive memristor based on a peptide-based material and a preparation method thereof. Background Art

[0002] Currently, research has been conducted on memristors that incorporate functional materials to impart multi-field controllable properties. For example, metal oxide-based memristors can manipulate their resistance state using light pulses, achieving a visual perception-like function of photoelectric coordinated modulation. Some organic memristors also utilize the phase change properties of temperature-sensitive materials to achieve a coupled temperature-conductance response.

[0003] However, existing technologies still have significant limitations: First, most devices can only respond to a single physical field (such as an electric field or light field), making it difficult to simultaneously perceive multimodal signals in complex environments. Second, the coupling mechanism between the material's environmental sensitivity and memristive properties is unclear, resulting in insufficient device stability and limited control precision. Third, existing solutions often rely on complex heterogeneous structures or external circuits to achieve signal fusion, which restricts device miniaturization and integration. Furthermore, the lack of biocompatible materials has also limited its application in the field of flexible electronics and biointerfaces.

[0004] Therefore, the existing technology still needs to be improved and developed. Summary of the Invention

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a dual-modal sensitive memristor based on peptide-based materials and a preparation method thereof, aiming to solve the problems that the existing memristor can only respond to a single physical field, has insufficient stability and limited control accuracy.

[0006] The technical solutions of the present invention are as follows:

[0007] A dual-modal sensitive memristor based on peptide-based materials comprises a bottom electrode layer, a top electrode layer, and at least one dielectric layer sandwiched between the bottom electrode layer and the top electrode layer; the dielectric layer is made of a self-assembling short peptide composed of at least three amino acids.

[0008] In the bimodal sensitive memristor based on peptide-based materials, the amino acids include one or more of tyrosine, phenylalanine, tryptophan, aspartic acid, arginine, and cysteine.

[0009] The dual-modal sensitive memristor based on peptide-based materials, wherein the self-assembling short peptide is composed of three identical amino acids.

[0010] The dual-modal sensitive memristor based on peptide-based materials, wherein the material of the bottom electrode layer includes one of gold, silver, copper, aluminum, indium tin oxide, titanium oxide, and tantalum oxide; the material of the top electrode includes one of silver, gold, copper, aluminum, platinum, and indium tin oxide.

[0011] In the dual-modal sensitive memristor based on peptide-based materials, the thickness of the bottom electrode layer is 10nm-60nm; the thickness of the top electrode layer is 10nm-60nm; and the thickness of the dielectric layer is 10nm-50nm.

[0012] In the bimodal sensitive memristor based on peptide-based materials, the number of the dielectric layers is greater than or equal to 2, and metal oxide layers are provided between the dielectric layers.

[0013] In the dual-mode sensitive memristor based on peptide-based materials, the material of the metal oxide layer includes one of aluminum oxide, hafnium oxide, iron oxide, molybdenum oxide, and silicon oxide.

[0014] A method for preparing a dual-modal sensitive memristor based on peptide-based materials, comprising the steps of:

[0015] pre-treating the substrate with the bottom electrode to obtain a pre-treated substrate;

[0016] mixing the self-assembling short peptide with a solvent to obtain a self-assembling short peptide solution;

[0017] The pretreated substrate is subjected to ultraviolet ozone treatment, and the self-assembling short peptide solution is spin-coated on the bottom electrode side of the substrate, followed by annealing to form at least one dielectric layer;

[0018] A top electrode layer is prepared on the dielectric layer to obtain a dual-mode sensitive memristor.

[0019] The method for preparing a dual-modal sensitive memristor based on peptide-based materials, wherein the concentration of the self-assembling short peptide solution is 8 mg / ml-15 mg / ml.

[0020] The method for preparing the dual-modal sensitive memristor based on peptide-based materials, wherein the temperature of the annealing treatment is 100° C.-150° C., and the time of the annealing treatment is 30 min-60 min.

[0021] Beneficial effects: The present invention provides a dual-modal sensitive memristor based on peptide-based materials and a preparation method thereof, wherein the dual-modal sensitive memristor comprises a bottom electrode layer, a top electrode layer, and a dielectric layer sandwiched between the bottom electrode layer and the top electrode layer; the material of the dielectric layer is a self-assembling short peptide, and the self-assembling short peptide is composed of at least three amino acids. The present invention adopts a self-assembling short peptide as a functional layer to construct a memristor structure with the bottom electrode layer and the top electrode layer, and realizes the coordinated regulation of the device threshold voltage and storage characteristics by the pressure and humidity dual fields through the piezoelectric effect and humidity sensitivity of the self-assembling short peptide. Specifically, the piezoelectric effect of the dielectric layer induces an internal polarization electric field under external pressure, changes the migration barrier of the metal ions in the electrode layer, and thus dynamically adjusts the threshold voltage of the device; at the same time, changes in environmental humidity affect the rate of metal oxidation to metal ions and the migration activation energy in the anode by regulating the hygroscopic expansion of the dielectric layer, further realizing precise control of the operating voltage and data retention time. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Schematic diagram of the structure of a dual-modal sensitive memristor based on peptide-based materials;

[0023] Figure 2 Schematic diagram of the molecular structure of the tyrosine-tyrosine-tyrosine tripeptide;

[0024] Figure 3 The figure is a flow chart of a preparation method of a dual-modal sensitive memristor based on peptide-based materials;

[0025] Figure 4 This is a schematic diagram of the process of preparing a memristor according to Example 1;

[0026] Figure 5 This is an atomic force microscope height image of the dielectric layer obtained in Example 1;

[0027] Figure 6 This is a data diagram of the device resistance change behavior of the memristor prepared in Example 1 under a relative humidity of 50%;

[0028] Figure 7 This is a data diagram of the resistance change behavior of the memristor prepared in Example 1 under different pressure values;

[0029] Figure 8 This is a data diagram of the memristor resistance behavior of the memristor prepared in Example 1 under different humidity conditions;

[0030] Figure 9 This is a histogram of the peak current of the memristor prepared in Example 1 under different pressures and humidity. DETAILED DESCRIPTION

[0031] The present invention provides a bimodal sensitive memristor based on a peptide-based material and a method for preparing the same. To clarify the objectives, technical solutions, and effects of the present invention, the present invention is described in further detail below. It should be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention.

[0032] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art in the art to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with their meanings in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0033] Since its conception, memristors, nonlinear resistors with memory properties, have demonstrated tremendous potential in information storage and brain-inspired computing. Their unique resistance switching behavior mimics the plasticity of biological synapses, providing the hardware foundation for building energy-efficient, highly parallel neuromorphic computing systems. In recent years, with the advancement of the Internet of Things (IoT) and intelligent sensing technologies, the single electrical signal control mechanism of traditional memristors has become inadequate for multimodal signal processing in complex environments. Consequently, researchers have begun exploring the use of innovative materials to empower memristors with multi-physical field responsiveness (such as light, heat, pressure, and humidity), enabling "in-sense computing"—computation that integrates signal sensing, storage, and computation—and thereby reduces the redundant data transfer and energy consumption inherent in traditional separate sensing and computing architectures. However, existing memristors suffer from limitations such as limited response to a single physical field, insufficient stability, and limited control precision.

[0034] To address this issue, the present invention proposes a dual-modal sensitive memristor based on peptide-based materials. Through molecular design, it integrates pressure and humidity sensitivity into a single memristor unit. Peptide-based materials, due to their tunable molecular self-assembly behavior, excellent mechanical responsiveness, and water molecule adsorption / desorption properties, provide an ideal platform for multi-physics field coupling. Compared to traditional inorganic or polymer-based memristors, this design not only achieves multi-dimensional coordinated regulation of pressure, humidity, and conductance, but also optimizes ion migration kinetics and interfacial contact resistance through peptide molecular interface engineering, thereby reducing operating voltage while improving the device's environmental robustness. This provides a new approach for the development of intelligent sensing chips that adapt to environmental changes and energy-efficient integrated sensing and computing systems.

[0035] Based on this, Figure 1As shown, the present invention provides a dual-modal sensitive memristor based on a peptide-based material, comprising a bottom electrode layer 10, a top electrode layer 20, and at least one dielectric layer 30 sandwiched between the bottom electrode layer 10 and the top electrode layer 20; the material of the dielectric layer 30 is a self-assembling short peptide, and the self-assembling short peptide is composed of at least three amino acids.

[0036] In this embodiment, a self-assembling peptide is used as a functional layer, forming a memristor structure with the bottom and top electrode layers. The piezoelectric effect and humidity sensitivity of the self-assembling peptide enable the coordinated regulation of the device's threshold voltage and storage characteristics by pressure and humidity. Specifically, the piezoelectric effect of the dielectric layer induces an internal polarization electric field under applied pressure, altering the migration barrier of metal ions in the electrode layer, thereby dynamically adjusting the device's threshold voltage. Simultaneously, changes in ambient humidity, by regulating the hygroscopic expansion of the dielectric layer, influence the rate of metal oxidation to metal ions in the anode and the activation energy of migration, further enabling precise control of the operating voltage and data retention time.

[0037] Specifically, the dual-modal sensitive memristor based on peptide-based materials provided by the present invention breaks through the limitations of traditional memristors that rely solely on electrical control. By embedding the pressure-humidity dual physical field response mechanism into the device's intrinsic characteristics through molecular-level interface design, its advantages over existing technologies are:

[0038] 1) Leveraging the biocompatibility and multi-level hydrogen bond network of self-assembled short peptide materials, high-stability dual-field coupling regulation is achieved, and the operating voltage can be flexibly adjusted;

[0039] 2) Without the need for external sensors or complex circuits, a single device can simultaneously sense pressure and humidity signals and perform in-situ preprocessing, significantly improving in-situ computing efficiency.

[0040] 3) By modulating the humidity-dependent activation energy of ion migration, data retention time can be continuously adjusted to meet the needs of adaptive storage in dynamic environments. This device has important application value in flexible electronic skin, environmental interactive storage, and edge intelligent sensing.

[0041] In some embodiments, the amino acids include one or more of tyrosine, phenylalanine, tryptophan, aspartic acid, arginine, and cysteine. Short peptides self-assembled from one or more of these amino acids exhibit piezoelectric and humidity-sensitive properties, enabling synergistic regulation of device threshold voltage and storage characteristics by pressure and humidity.

[0042] In some embodiments, the self-assembling short peptide is composed of three identical amino acids. Using three identical amino acids to construct a tripeptide, and using it as a material for the dielectric layer, has the characteristics of regulating molecular polarity and changing the dielectric constant and response sensitivity of the dielectric layer.

[0043] In a preferred embodiment, the self-assembling short peptide is tyrosine-tyrosine-tyrosine (CAS No.: 7390-78-5, molecular formula: Figure 2 shown).

[0044] In some embodiments, the material of the bottom electrode layer includes one of gold, silver, copper, aluminum, indium tin oxide, titanium oxide, and tantalum oxide; and the material of the top electrode includes one of silver, gold, copper, aluminum, platinum, and indium tin oxide. The dielectric layer is sandwiched between the bottom and top electrode layers to form a two-terminal structure of metal-dielectric layer-metal. The piezoelectric effect of the dielectric layer can be exploited to induce an internal polarization electric field under applied pressure, changing the migration barrier of metal ions and thereby dynamically adjusting the threshold voltage of the device. Simultaneously, changes in ambient humidity affect the rate of oxidation of the anode metal to metal ions and the migration activation energy of the metal ions by regulating the hygroscopic expansion of the dielectric layer, further enabling precise control of the operating voltage and data retention time.

[0045] In a preferred embodiment, the bottom electrode is ITO; the top electrode is a silver electrode; and the bottom electrode and the top electrode adopt a cross array structure, so that the density of the device is higher.

[0046] In some embodiments, the thickness of the bottom electrode layer is 10nm-60nm; the thickness of the top electrode layer is 10nm-60nm; and the thickness of the dielectric layer is 10nm-50nm. By controlling the thickness of the bottom electrode layer, top electrode layer, and dielectric layer within the aforementioned ranges, the biocompatibility and multi-level hydrogen bond network of short peptide materials can be utilized to achieve highly stable dual-field coupling regulation, allowing for flexible control of the operating voltage.

[0047] In a preferred embodiment, the thickness of the bottom electrode layer is 30 nm; the thickness of the top electrode is 30 nm; and the thickness of the dielectric layer is 30 nm.

[0048] In some embodiments, the number of dielectric layers is greater than or equal to 2, and metal oxide layers are disposed between the dielectric layers. When the number of dielectric layers is greater than or equal to 2, metal oxide layers may be disposed between the dielectric layers to construct a quantum well structure, thereby improving resistive switching stability through interface effects.

[0049] Specifically, only one dielectric layer or multiple dielectric layers may be provided between the top electrode layer and the bottom electrode layer, or multiple dielectric layers may be provided and metal oxide layers may be provided between the dielectric layers to construct a quantum well structure.

[0050] In some embodiments, the metal oxide layer is made of one of aluminum oxide, hafnium oxide, iron oxide, molybdenum oxide, and silicon oxide. The metal oxide layer is disposed between dielectric layers to form a quantum well structure, thereby improving resistive switching stability through interface effects.

[0051] In addition, Figure 3 As shown, the present invention also provides a method for preparing a dual-modal sensitive memristor based on a peptide-based material, comprising the steps of:

[0052] Step S10: pre-treating the substrate with the bottom electrode to obtain a pre-treated substrate;

[0053] Step S20: mixing the self-assembling short peptide with a solvent to obtain a self-assembling short peptide solution;

[0054] Step S30: performing ultraviolet ozone treatment on the pretreated substrate, and spin-coating the self-assembling short peptide solution on the bottom electrode side of the substrate, and performing annealing treatment to form at least one dielectric layer;

[0055] Step S40: preparing a top electrode layer on the dielectric layer to obtain a dual-mode sensitive memristor.

[0056] In this embodiment, a self-assembled short peptide is prepared into a dielectric layer using a spin coating process, and a memristor structure is constructed with the bottom electrode layer and the top electrode layer. Through the piezoelectric effect and humidity-sensitive properties of the self-assembled short peptide, the coordinated regulation of the device threshold voltage and storage characteristics by the pressure and humidity dual fields is achieved.

[0057] Specifically, the memristor made using this preparation method has a piezoelectric effect in the dielectric layer that induces an internal polarization electric field under external pressure, which can change the migration barrier of metal ions in the electrode layer, thereby dynamically adjusting the threshold voltage of the device; at the same time, changes in ambient humidity affect the rate of metal oxidation to metal ions and the migration activation energy in the anode by regulating the hygroscopic expansion of the dielectric layer, further achieving precise control of the operating voltage and data retention time.

[0058] In some embodiments, the concentration of the self-assembling peptide solution is 8 mg / ml-15 mg / ml. The thickness of the dielectric layer can be controlled by controlling the concentration of the self-assembling peptide solution and the parameters of the spin coating process.

[0059] In a preferred embodiment, the concentration of the self-assembling short peptide solution is 10 mg / ml.

[0060] In some embodiments, the annealing temperature is 100° C.-150° C., and the annealing time is 30 min-60 min. After spin coating the self-assembling peptide solution on the bottom electrode side of the substrate and then performing annealing, a stable organic active layer, i.e., a dielectric layer, can be obtained.

[0061] In a preferred embodiment, the annealing treatment temperature is 120° C., and the annealing treatment time is 40 minutes.

[0062] In some embodiments, the substrate includes one of a glass substrate, a PDMS flexible substrate, and a PET flexible substrate; a flexible wearable environmentally responsive memristor can be produced by combining a flexible substrate with a spin coating process.

[0063] In some embodiments, in step S10, pre-treating the substrate with the bottom electrode includes immersing the substrate with the bottom electrode in anhydrous ethanol and cleaning it under ultrasonic conditions for 10 minutes, then drying it with nitrogen and baking it to obtain a pre-treated substrate.

[0064] In some embodiments, step S30 can also be: spin coating the self-assembled short peptide solution on the bottom electrode side of the substrate, annealing to form a dielectric layer, and then depositing a metal oxide layer on the dielectric layer; the dielectric layer and the metal oxide layer can be alternately deposited multiple times to construct a quantum well structure, and the resistive switching stability is improved through the interface effect.

[0065] In some embodiments, in step S30, the spin coating adopts a multi-step spin coating process with a rotation speed of 800-3000 rpm and acceleration step control.

[0066] In some embodiments, the acceleration step control specifically adopts two-step speed (first stage and second stage), the rotation speed is 800 rpm for the first 5-10 seconds of the spin coating process, and then increased to 3000 rpm for spin coating. This process has better film uniformity.

[0067] In some embodiments, the spin coating time of the first stage is 5-10 s, and the spin coating time of the second stage is 30-90 s.

[0068] In some embodiments, in step S20, the solvent is obtained by mixing an organic solvent with water.

[0069] In a preferred embodiment, the solvent consists of hexafluoroisopropanol and water.

[0070] In some embodiments, in step S40, a mask alignment technique is used to deposit the top electrode layer by thermal evaporation. The contact characteristics of the electrode interface are optimized by regulating the evaporation rate and substrate temperature, thereby forming a cross array.

[0071] In some embodiments, the evaporation rate is The substrate temperature is 70°C-100°C.

[0072] The present invention will be described in detail with reference to the following examples. It should also be understood that the following examples are only intended to further illustrate the present invention and are not to be construed as limiting the scope of protection of the present invention. Any non-essential improvements and adjustments made by those skilled in the art based on the above disclosure of the present invention fall within the scope of protection of the present invention.

[0073] Example 1

[0074] This embodiment uses a tripeptide composed of tyrosine as the dielectric layer material (tyrosine-tyrosine-tyrosine, CAS number: 7390-78-5, its molecular formula is as follows Figure 2 As shown in the figure), a memristor device is prepared. The device adopts a metal-dielectric layer-metal two-terminal structure. The device preparation process is as follows Figure 4 The specific steps are as follows:

[0075] 1) Substrate pretreatment

[0076] A glass substrate (2 cm×2 cm in size) with a 30 nm thick ITO electrode was immersed in anhydrous ethanol and cleaned under ultrasonic conditions for 10 minutes, then blown dry with nitrogen and dried for later use.

[0077] 2) Preparation of dielectric layer

[0078] 10 mg of tyrosine-tyrosine-tyrosine was dissolved in hexafluoroisopropanol, and then 4 times the volume of ultrapure water was added to the hexafluoroisopropanol to fully dissolve the tyrosine tripeptide solution with a concentration of 10 mg / ml.

[0079] The substrate treated in step 1) was first treated with ultraviolet ozone (UVO), and then a thin film was prepared by solution spin coating: a tyrosine tripeptide solution was spin-coated on the substrate, and a multi-stage spin coating process (spinning at 800 rpm for 5 seconds, then increasing to 3000 rpm for 30 seconds) was combined to form a film on the ITO glass. After preparation, the film was annealed at 90°C in a nitrogen environment for 30 minutes to obtain a stable dielectric layer. The atomic force microscopy imaging results are shown in Figure 2. Figure 5 As shown, it can be seen that the surface roughness of the prepared dielectric layer is 0.85 nm, and the surface is flat and uniform.

[0080] 3) Top electrode preparation

[0081] Using mask alignment technology, a 30nm silver top electrode array was deposited by thermal evaporation. By controlling the evaporation rate and substrate temperature (80°C) to optimize the contact characteristics of the electrode interface, thereby forming a cross array structure and obtaining a memristor.

[0082] The performance test of the memristor prepared above includes the following aspects:

[0083] 1) Electrical programming test

[0084] The electrical performance of the memristor was evaluated using a semiconductor parameter analyzer and a probe station. First, a voltage retrace test was performed on the device in a fixed test environment (relative humidity 50%), and the current change was recorded.

[0085] The test method is: sweep from 0V to 2V and back to 0V, with a step frequency of 10mV, and sweep continuously for 10 times; focus on studying the programming characteristics of the current during the voltage retrace process, mainly focusing on the threshold voltage of the device. The test results are as follows Figure 6 As shown, the test results show that the memristor exhibits a sudden resistance transition characteristic, with a threshold voltage of 0.5-0.8V, a current switching ratio greater than 100, and a volatile threshold transition.

[0086] 2) Memristive behavior test under different pressure fields

[0087] In a fixed test environment (relative humidity 50%), by integrating a pressure loading module on the probe station, the direction of applied pressure is perpendicular to the memristor film layer, different pressure values ​​(0kPa, 50kPa, 100kPa, 150kPa, 200kPa) are set, and the pressure uniformity is verified by a piezoelectric sensor. Each pressure point is stabilized for 3 minutes to eliminate the creep effect. The test method is consistent with the electrical programming study (0V→2V→0V, step frequency 10mV, continuous scanning 10 times, followed by a retracement of 0V→-3V→0V). Compare the threshold voltage and current switching ratio of the device under different pressures. The results are shown in the figure below. Figure 7 As shown in Figure 3, the results show that under appropriate voltage excitation, the operating voltage of the device decreases from 0.75V to 0.25V as the applied pressure increases.

[0088] 3) Memristive behavior test under different humidity fields

[0089] Without applying pressure, the device was placed in a homemade humidity control chamber and tested for resistance change under different humidity environments (relative humidity 10%, 30%, 50%, 70%, 90%). The test method is the same as above: 0V→3V→0V, step frequency 10mV, continuous scanning 10 times, followed by a 0V→-3V→0V retracement. The threshold voltage and current switching ratio of the device under different humidity conditions are compared. The results are shown in the figure. Figure 8 As shown in the figure, the results show that under 10% and 30% humidity conditions, the device cannot achieve resistance transformation due to the significant increase in threshold voltage; under 50%, 70% and 90% humidity conditions, as the humidity increases, the threshold voltage of the device gradually decreases from 0.70V to 0.30V, and the resistance in the high-resistance state decreases, resulting in a corresponding decrease in the current switching ratio.

[0090] 4) Memristive behavior test under the coupling of humidity and pressure

[0091] The resistance transition of the device was achieved by electric pulse excitation (3V, 0.1s). By monitoring the current relaxation time in the low resistance state, the combined effect of humidity and pressure on the resistance transition behavior of the device was evaluated. In the experiment, the peak current (i.e. the current at the end of the pulse) that the device could achieve was recorded under different humidity conditions (relative humidity 30%, 50%, 70%, 90%) and different pressure values ​​(30kPa, 40kPa, 50kPa, 70kPa, 90kPa, 110kPa, 130kPa, 150kPa). The results are shown in Figure 2. Figure 9 As shown, the results show that higher peak current can be obtained under higher humidity and larger voltage excitation.

[0092] In summary, the present invention provides a dual-modal sensitive memristor based on peptide-based materials and a preparation method thereof. The dual-modal sensitive memristor includes a bottom electrode layer, a top electrode layer, and a dielectric layer sandwiched between the bottom electrode layer and the top electrode layer; the material of the dielectric layer is a self-assembling short peptide, and the self-assembling short peptide is composed of at least three amino acids. The present invention uses a self-assembling short peptide as a functional layer to construct a memristor structure with the bottom electrode layer and the top electrode layer, and realizes the coordinated regulation of the device threshold voltage and storage characteristics by the pressure and humidity dual fields through the piezoelectric effect and humidity sensitivity of the self-assembling short peptide. Specifically, the piezoelectric effect of the dielectric layer induces an internal polarization electric field under external pressure, changes the migration barrier of the metal ions in the electrode layer, and thus dynamically adjusts the threshold voltage of the device; at the same time, changes in environmental humidity affect the rate of metal oxidation to metal ions and the migration activation energy in the anode by regulating the hygroscopic expansion of the dielectric layer, further realizing precise control of the operating voltage and data retention time.

[0093] It should be understood that the application of the present invention is not limited to the above examples. For those skilled in the art, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A dual-mode sensitive memristor based on peptide-based materials, characterized in that: It comprises a bottom electrode layer, a top electrode layer and at least one dielectric layer sandwiched between the bottom electrode layer and the top electrode layer; the dielectric layer is made of a self-assembling short peptide, which is composed of at least three amino acids.

2. The dual-mode sensitive memristor based on peptide-based materials according to claim 1, characterized in that: The amino acids include one or more of tyrosine, phenylalanine, tryptophan, aspartic acid, arginine, and cysteine.

3. The dual-mode sensitive memristor based on peptide-based materials according to claim 1, characterized in that: The self-assembling short peptide is composed of three identical amino acids.

4. The dual-mode sensitive memristor based on peptide-based materials according to claim 1, characterized in that: The material of the bottom electrode layer includes one of gold, silver, copper, aluminum, indium tin oxide, titanium oxide, and tantalum oxide; the material of the top electrode includes one of silver, gold, copper, aluminum, platinum, and indium tin oxide.

5. The dual-mode sensitive memristor based on peptide-based materials according to claim 1, characterized in that: The thickness of the bottom electrode layer is 10nm-60nm; the thickness of the top electrode layer is 10nm-60nm; and the thickness of the dielectric layer is 10nm-50nm.

6. The dual-mode sensitive memristor based on peptide-based materials according to claim 1, characterized in that: The number of the dielectric layers is greater than or equal to 2, and metal oxide layers are provided between the dielectric layers.

7. The dual-mode sensitive memristor based on peptide-based materials according to claim 6, characterized in that: The material of the metal oxide layer includes one of aluminum oxide, hafnium oxide, iron oxide, molybdenum oxide and silicon oxide.

8. A method for preparing a dual-modal sensitive memristor based on a peptide-based material according to any one of claims 1 to 7, characterized in that: Including steps: pre-treating the substrate with the bottom electrode to obtain a pre-treated substrate; mixing the self-assembling short peptide with a solvent to obtain a self-assembling short peptide solution; The pretreated substrate is subjected to ultraviolet ozone treatment, and the self-assembling short peptide solution is spin-coated on the bottom electrode side of the substrate, followed by annealing to form at least one dielectric layer; A top electrode layer is prepared on the dielectric layer to obtain a dual-mode sensitive memristor.

9. The method for preparing a dual-modal sensitive memristor based on peptide-based materials according to claim 8, characterized in that: The concentration of the self-assembling short peptide solution is 8 mg / ml-15 mg / ml.

10. The method for preparing a dual-modal sensitive memristor based on peptide-based materials according to claim 8, characterized in that: The annealing treatment temperature is 100° C.-150° C., and the annealing treatment time is 30 min-60 min.

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