Probe and probe inspection method

Abstract

A probe (10) is provided with a plurality of measurement units (16), each measurement unit (16) is provided with a wafer chuck (50) and a probe card (56), and the probe (10) is provided with an alignment device (70) configured so as to be movable between the measurement units (16). The alignment device (70) supports the wafer chuck (50) in a manner that the wafer chuck (50) can be freely assembled and disassembled, and performs relative position alignment of the wafer chuck (50) relative to the probe card (56). Moreover, the alignment device (70) is provided with a probe position detection camera (82) for detecting the tip position of the probe (66) and an angle inclination mechanism (76) for integrally inclining the wafer chuck (50) and the probe position detection camera (82), and a probe for adjusting the probe card (56) and the wafer chuck (50) to be parallel is adopted, so that the probe can be detected with high precision without being affected by the inclination of the probe card, and the alignment accuracy of the wafer chuck (50) is improved. Good contact between an electrode pad on a wafer and a probe can be realized.

Description

Technical Field

[0001] The present disclosure relates to detectors and probe inspection methods. Background Art

[0002] The semiconductor manufacturing process involves multiple steps. Various inspections are performed during each manufacturing process to ensure quality and improve yield. For example, wafer level testing is performed during the stage where multiple semiconductor chips of a semiconductor device are formed on a semiconductor wafer. Wafer level testing is an electrical test that verifies that the semiconductor devices on each semiconductor chip are functioning properly. This method connects the electrode pads of the semiconductor device on each semiconductor chip to a test head, supplies power and test signals from the test head, and uses the test head to measure the signals output by the semiconductor device.

[0003] After the wafer level inspection, the wafer is attached to a frame and cut into individual semiconductor chips using a dicing machine. Those confirmed to be functioning properly are packaged in the next assembly process. The packaged final product undergoes a factory inspection. Meanwhile, chips that are malfunctioning are removed from the assembly process.

[0004] Wafer level testing is performed using a prober. The prober brings probes into contact with electrode pads. The probes are electrically connected to the terminals of a test head. The test head supplies power and test signals to each semiconductor chip via the probes. The test head also detects output signals from each semiconductor chip to verify proper operation of the semiconductor device.

[0005] In semiconductor manufacturing, wafers are becoming larger and more miniaturized (integrated) to reduce manufacturing costs. Consequently, the number of chips formed on a single wafer is increasing significantly. Consequently, the time required to inspect a single wafer using a probe is also increasing. Consequently, there is a demand for increased inspection throughput. To increase throughput, multi-DUT probing can be used. Multi-DUT probing involves setting up multiple probes to inspect multiple chips in parallel. In recent years, the number of chips inspected in parallel has increased, and attempts are underway to inspect all semiconductor chips on a wafer in parallel. On the other hand, multi-DUT probing reduces the tolerance for alignment between the electrode pads and the probes. Therefore, it is necessary to improve the positional accuracy of the probes.

[0006] Another method for increasing throughput is to increase the number of detectors. However, increasing the number of detectors increases the installation area required on the production line. Furthermore, increasing the number of detectors also increases equipment costs. Therefore, a method is needed to increase throughput while minimizing the increase in installation area and equipment costs.

[0007] Against this backdrop, a test apparatus (multi-stage prober) including a plurality of measurement units is proposed, for example, in Patent Document 1. In this test apparatus, an alignment device configured to align the relative positions of a wafer and a probe card is movable between the measurement units.

[0008] From another perspective, in order to perform accurate inspections using a probe, it is necessary to ensure uniform contact between the probe and the electrode pads on the wafer. Uniform contact can be achieved by making the probe card parallel to the wafer. However, due to the influence of volume changes of the components, it is sometimes difficult to maintain parallelism. Inspections using a probe are carried out while the measurement environment is temperature-controlled to a high or low temperature. Therefore, due to temperature changes in the measurement environment, each component may experience (minor) volume changes (expansion, contraction).

[0009] In order to maintain the parallelism between the probe card and the wafer, an angle tilt mechanism can be used. For example, an angle tilt mechanism can be provided on the mechanism holding the probe card and on the mechanism holding the wafer chuck.

[0010] For example, the prober disclosed in Patent Document 2 includes an angle tilt mechanism on the side of the mechanism holding the wafer chuck. This prober uses an upward confirmation camera to check the tilt of the probe card and uses the tilt mechanism to tilt the wafer chuck holding the wafer according to the tilt, thereby maintaining parallelism between the probe card and the wafer. Prior art literature Patent Literature

[0011] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-150168 [Patent Document 2] Japanese Patent Application Laid-Open No. 2017-069427 Summary of the Invention Problems to be solved by the invention

[0012] In the prober disclosed in Patent Document 2, there are cases where good contact cannot be achieved between the electrode pads on the wafer and the probe needles. This is because in the probe of Patent Document 2, when the wafer chuck is tilted, the relative positional relationship between it and the upper confirmation camera changes, making it difficult to accurately detect the positional relationship between the wafer held by the wafer chuck and the probe. On the other hand, the method of providing an angle tilting mechanism on the mechanism side holding the probe card also has problems. In a multi-stage prober, since an angle tilting mechanism must be provided for each measuring part, the structure becomes complicated and disadvantageous in terms of cost.

[0013] The present disclosure aims to solve at least one of the problems existing in the above-mentioned prior art. As a specific purpose, it is to provide a detector and a probe inspection method that can detect the probe with high precision without being affected by the tilt of the probe card and can achieve good contact between the electrode pads on the wafer and the probe. Means of solving problems

[0014] One embodiment of the probe disclosed herein is a probe comprising a plurality of measuring parts, wherein a chip chuck having a holding surface for holding a chip and a probe card having a plurality of probes on a surface opposite to the holding surface are respectively provided in the plurality of measuring parts, wherein the probe comprises an alignment device, the alignment device being configured to be movable between the plurality of measuring parts, and supporting the chip chuck in a manner that the chip chuck can be freely disassembled and mounted in the measuring part at the moving destination, so as to perform relative position alignment of the chip chuck with respect to the probe card, the alignment device comprising: a probe position detection camera, which detects the top position of the probe at a position opposite to the probe card; and a tilting mechanism, which tilts the chip chuck and the probe position detection camera integrally.

[0015] One embodiment of the probe inspection method disclosed herein is a probe inspection method for a probe, wherein the probe has a plurality of measuring parts, and the plurality of measuring parts are respectively provided with a chip chuck having a holding surface for holding a chip and a probe card having a plurality of probes on a surface facing the holding surface. The probe has an alignment device, which is configured to be able to move between the plurality of measuring parts, and at the measuring part of the moving destination, supports the chip chuck in a manner that the chip chuck can be freely disassembled and mounted, and performs relative position alignment of the chip chuck with respect to the probe card, the alignment device having: a probe position detection camera, which detects the top position of the probe at a position facing the probe card; and a tilting mechanism, which tilts the chip chuck, wherein the probe inspection method includes: a detection step, in which the tilt angle of the probe card is detected; and a tilt control step, in which, based on the detection result of the detection step, the tilting mechanism is controlled to tilt the chip chuck and the probe position detection camera integrally so that the holding surface is parallel to the probe card. Effects of the Invention

[0016] The present disclosure can solve at least one problem in the prior art. Specifically, it provides a prober and a probe inspection method that can accurately detect probes without being affected by the tilt of the probe card and achieve good contact between electrode pads on a wafer and the probes. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1It is a perspective view showing the overall structure of a probe according to an embodiment of the present invention. Figure 2 It is schematically shown Figure 1 A top view of the internal structure of the detector is shown. Figure 3 It is a schematic diagram showing the structure of the measurement unit viewed from the loading section side. Figure 4 It is a schematic diagram showing the structure of the measuring unit. Figure 5 This is a functional block diagram of the detector control unit. Figure 6 Flowchart showing the flow of the probe inspection method. Figure 7 This is a diagram for explaining the probe inspection method. Figure 8 It is a figure for demonstrating the cleaning process using the cleaning plate of a probe. Figure 9 This is a diagram for explaining a case where the observation direction of the probe position detection camera of the probe is directed outward. DETAILED DESCRIPTION

[0018] A first embodiment of the probe disclosed in the present invention is a probe comprising a plurality of measuring parts, wherein a chip chuck having a holding surface for holding a chip and a probe card having a plurality of probes on a surface opposite to the holding surface are respectively provided in the plurality of measuring parts, wherein the probe comprises an alignment device, the alignment device being configured to be movable between the plurality of measuring parts, and supporting the chip chuck in a manner that the chip chuck can be freely disassembled and mounted in the measuring part of the moving destination, so as to perform relative position alignment of the chip chuck with respect to the probe card, the alignment device comprising: a probe position detection camera, which detects the top position of the probe at a position opposite to the probe card; and a tilting mechanism, which tilts the chip chuck and the probe position detection camera integrally.

[0019] The second embodiment of the detector disclosed in the present invention is based on the first embodiment, wherein the alignment device has a common supporting portion that jointly supports the chip chuck and the probe position detection camera, and the tilting mechanism tilts the common supporting portion, thereby tilting the chip chuck and the probe position detection camera as a whole.

[0020] The third embodiment of the detector disclosed herein is based on the second embodiment, wherein the alignment device includes a moving mechanism that moves the chip chuck relative to the probe card in a direction parallel to the holding surface, and the tilting mechanism is arranged between the moving mechanism and the common support portion.

[0021] The fourth embodiment of the probe disclosed herein is based on any one of the first to third embodiments and comprises: a detection component that detects the tilt angle of the probe card; and a control component that controls the tilt mechanism based on the detection result of the detection component so that the holding surface is parallel to the probe card.

[0022] According to a fifth embodiment of the prober disclosed herein, in the fourth embodiment, the detecting member detects the tilt angle of the probe card based on a detection result of the probe position detection camera.

[0023] A sixth embodiment of the probe disclosed herein is based on any one of the first to third embodiments, wherein the alignment device includes a cleaning plate for cleaning the tip of the probe, and the tilting mechanism tilts the cleaning plate integrally with the wafer chuck.

[0024] A first embodiment of the probe inspection method disclosed herein is a probe inspection method for a probe, wherein the probe comprises a plurality of measuring parts, wherein a chip chuck having a holding surface for holding a chip and a probe card having a plurality of probes on a surface facing the holding surface are respectively provided in the plurality of measuring parts, the probe comprises an alignment device, the alignment device being configured to be movable between the plurality of measuring parts, and supporting the chip chuck in a manner that the chip chuck can be freely detached at the measuring part of the moving destination, and performing relative position alignment of the chip chuck with respect to the probe card, the alignment device comprising: a probe position detection camera, which detects the top position of the probe at a position facing the probe card; and a tilting mechanism, which tilts the chip chuck, wherein the probe inspection method includes: a detection step, in which the tilt angle of the probe card is detected; and a tilt control step, in which, based on the detection result of the detection step, the tilting mechanism is controlled to tilt the chip chuck and the probe position detection camera integrally so that the holding surface is parallel to the probe card.

[0025] According to a second embodiment of the probe inspection method of the present disclosure, based on the first embodiment of the probe inspection method, the detecting step includes detecting a tilt angle of the probe card based on a detection result of the probe position detection camera. Hereinafter, preferred embodiments will be described with reference to the accompanying drawings.

[0026] [detector] Figure 1 and Figure 2 They are respectively a perspective view and a top view showing the overall structure of an embodiment of the detector.

[0027] like Figure 1 and Figure 2As shown, the probe 10 of the embodiment includes a loading unit 14 and a measuring unit 12. The loading unit 14 supplies and recovers the wafer W to be inspected (see Figure 4 ). In addition, the measuring unit 12 is arranged adjacent to the loading unit 14. The detector 10 is a multi-stage detector in which the measuring unit 12 is provided with a plurality of measuring units 16. The loading unit 14 supplies wafers W to the measuring units 16 respectively. The measuring unit 16 performs an inspection of the electrical characteristics of each semiconductor chip of the supplied wafer W (wafer level inspection). Then, the wafer W inspected by the measuring unit 16 is recovered by the loading unit 14. It should be noted that the detector 10 also includes an operation panel 21, a control unit 90 for controlling each part (see Figure 5 )wait.

[0028] The loading section 14 includes a loading port 18 and a conveying unit 22. A wafer box 20 is placed on the loading port 18. The conveying unit 22 conveys the wafer W between each measuring section 16 and the wafer box 20. The conveying unit 22 includes a conveying unit drive mechanism (not shown). The conveying unit 22 is configured to be movable in the X-axis direction and the Z-axis direction, and is configured to be rotatable in the θ direction (around the Z-axis direction). In addition, the conveying unit 22 includes a conveying arm 24. The conveying arm 24 is configured to be freely extendable forward and backward, and is extended and retracted by the above-mentioned conveying unit drive mechanism. An adsorption pad (not shown) is provided on the upper surface of the conveying arm 24. The conveying arm 24 uses the adsorption pad to vacuum-adsorb the back surface of the wafer W to hold the wafer W. The wafer W in the wafer cassette 20 is taken out by the transfer arm 24 of the transfer unit 22. The wafer W is transferred to each measurement unit 16 of the measurement unit 12 while being held on the upper surface of the transfer arm 24. After the inspection is completed, the inspected wafer W is returned from each measurement unit 16 to the wafer cassette 20 via the reverse path.

[0029] Figure 3 1 is a diagram showing the structure of the measurement unit 12 viewed from the loading section side.

[0030] like Figure 3 As shown, the measurement unit 12 has a stacked structure (multi-layer structure) consisting of multiple measurement units 16 stacked in multiple layers. The measurement units 16 are arranged two-dimensionally along the X-axis and the Z-axis. In this embodiment, four measurement units 16 are stacked in the X-axis direction, and three layers of measurement units 16 are stacked in the Z-axis direction. It should be noted that each measurement unit 16 has the same structure. As described later, the measurement unit 16 includes a test head 54, a wafer chuck 50, and a probe card 56.

[0031] The measurement unit 12 includes a housing 11. The housing 11 is a lattice-shaped structure formed by combining multiple frames. The housing 11 is composed of multiple frames 13. The frames 13 extend in the X-axis direction, the Y-axis direction, and the Z-axis direction, and are combined in a lattice-shaped structure.

[0032] The alignment device 70 is provided in each layer. That is, in this example, it is provided in three layers stacked in the Z direction. The alignment device 70 can be moved between the plurality of measurement units 16 arranged on each level (layer). In other words, the alignment device 70 is shared by the plurality (four in the embodiment) of measurement units 16 arranged on the same level (layer).

[0033] [Measurement Department] Next, the configuration of the measuring unit 16 will be described. Figure 4 It is a schematic diagram showing the configuration of the measuring unit 16 .

[0034] like Figure 4 As shown, the measurement unit 16 includes a wafer chuck 50 , a test head stage 52 , a test head 54 , and a probe card 56 .

[0035] A test head 54 is supported above the test head stage 52 by a test head holder. Note that the test head holder is not shown. The test head 54 is electrically connected to the probes 66 of the probe card 56. The test head 54 supplies power and test signals to each semiconductor chip to inspect its electrical characteristics. Furthermore, the test head 54 detects the output signals from each semiconductor chip to determine whether it is operating normally.

[0036] The test head stage 52 is supported by a frame (not shown) that forms part of the housing. The test head stage 52 includes a spring frame mounting portion. The spring frame mounting portion has a circular opening. The circular opening corresponds to the planar shape of the spring frame. It should be noted that the spring frame and spring frame mounting portion are not shown. The method for securing the spring frame to the test head stage 52 is not limited to the method described above.

[0037] The spring frame includes a plurality of spring pins that electrically connect terminals formed on the bottom surface of the test head 54 and terminals formed on the top surface of the probe card 56 . Annular sealing members are formed on the upper and lower surfaces of the outer periphery of the spring frame. The upper surface is the surface facing the test head 54 , and the lower surface is the surface facing the probe card 56 . The test head 54 , the spring frame, and the probe card 56 are integrated by a suction member. That is, the space surrounded by the test head 54, the spring frame, and the upper surface side sealing member, and the space surrounded by the probe card 56, the spring frame, and the lower surface side sealing member are decompressed and fixed. Note that the sealing member and the suction means are not shown.

[0038] Probe card 56 includes a plurality of probes 66. Probes 66 correspond to electrode pads on each semiconductor chip on wafer W. Probes 66 are formed to protrude downward from the bottom surface of probe card 56. The bottom surface of probe card 56 faces wafer chuck 50. Probes 66 are electrically connected to terminals provided on the top surface of probe card 56. Therefore, when the test head 54, spring frame (not shown), and probe card 56 are integrated, the probes 66 are electrically connected to the terminals of the test head 54 via the spring frame. It should be noted that the probe card 56 of the embodiment includes a plurality of probes 66 corresponding to the electrode pads of all semiconductor chips on the wafer W to be inspected. Each measurement unit 16 performs parallel inspection of the semiconductor chips on the wafer W. It should be noted that during inspection, the wafer W is held on the wafer chuck 50.

[0039] The wafer chuck 50 has a holding surface 50A. The upper surface of the holding surface 50A holds the wafer W. The holding surface 50A is a flat surface that holds and secures the wafer W by suction, for example, vacuum suction. The wafer chuck 50 is detachably supported by an alignment device 70. The wafer chuck 50 is movable in the X-axis, Y-axis, Z-axis, and θ-direction by the alignment device 70. An annular sealing member (not shown) is provided on the outer periphery of the holding surface 50A. Then, a suction device (not shown) is used to reduce the pressure in the space enclosed by the probe card 56, the wafer chuck 50, and the sealing member. Due to the reduced pressure in this space, the wafer chuck 50 is pulled toward the probe card 56. This causes the probes 66 of the probe card 56 to contact the electrode pads of the semiconductor chips on the wafer W. Once the probes 66 contact the electrode pads, inspection can begin.

[0040] A heating and cooling mechanism (not shown) is installed inside the wafer chuck 50. The heating and cooling mechanism adjusts the temperature of the semiconductor chip. Electrical characteristics testing is often performed at -40°C to 150°C. The heating and cooling mechanism adjusts the temperature of the measurement environment so that testing can be performed at high or low temperatures. As the heating and cooling mechanism, a known suitable heater / cooler can be used. For example, as non-limiting examples, a two-layer heating and cooling mechanism comprising a heating layer with a heater plate and a cooling layer with a cooling fluid passageway can be used, as can a single-layer heating and cooling mechanism with a cooling tube wrapped around a heater embedded in a heat conductor. In addition to electric heating, a thermal fluid can also be circulated. Furthermore, a Peltier element can be used.

[0041] (Alignment device) like Figure 3 、 Figure 4As shown, the measurement unit 12 includes an alignment device 70. The alignment device 70 supports the wafer chuck 50 so that it can be freely attached and detached. The alignment device 70 includes a Z-axis movable rotary unit 72, a probe position detection camera 82, a cleaning plate 84, a support table 74, an angle tilting mechanism 76, and an XY stage 78. The probe position detection camera 82 and the cleaning plate 84 are mounted on the Z-axis movable rotary unit 72. The support table 74 supports the Z-axis movable rotary unit 72. The angle tilting mechanism 76 supports the support table 74. The XY stage 78 supports the angle tilting mechanism 76.

[0042] The Z-axis moving and rotating portion 72 moves the upper surface 72A in the Z-axis direction and rotates the upper surface 72A about the central axis CL. The central axis CL is parallel to the Z-axis. The upper surface 72A supports the wafer chuck 50 so that the wafer chuck 50 can be freely attached and detached. Thus, the Z-axis moving and rotating portion 72 moves the wafer chuck 50 in the Z-axis direction and rotates the wafer chuck 50 about the central axis CL.

[0043] The probe position detection camera 82 captures an image of the probes 66 of the probe card 56. The image is captured at a position facing the probe card 56. Based on the image, the tip position of the probe 66 can be detected. Specifically, the XY coordinates of the tip position of the probe 66 are detected based on the position coordinates (XY coordinates) in the image, and the Z coordinate is detected based on the focus position of the probe position detection camera 82. The position of the probe 66 is detected by the probe position detection unit 93 of the control unit 90 (see Figure 5 )implement.

[0044] The cleaning plate 84 removes debris such as shavings and foreign matter adhering to the tip of the probe 66. The debris is removed while the probe 66 is in contact with the cleaning plate 84. The cleaning plate 84 removes the debris from the tip of the probe 66 by causing the two to move, vibrate, or swing relative to each other while in contact.

[0045] The probe position detection camera 82 is integrally mounted on the Z-axis moving rotation unit 72 via a holding member 85. Furthermore, a cleaning plate 84 is mounted on the upper surface of an upper and lower stage 88. The upper and lower stage 88 is integrally mounted on the probe position detection camera 82 via a holding member 87. The upper and lower stage 88 moves the cleaning plate 84 in a direction parallel to the central axis CL. However, the above is an example, and the probe position detection camera 82 and the cleaning plate 84 may be separately mounted on the Z-axis moving rotation unit 72 .

[0046] The support table 74 is disposed on the lower surface side of the Z-axis movable rotary unit 72. Specifically, the Z-axis movable rotary unit 72 is supported by the upper surface 74A of the support table 74. The wafer chuck 50 is supported on the upper surface 72A of the Z-axis movable rotary unit 72, and a probe position detection camera 82 is mounted via a holding member 85. Therefore, when the support table 74 is tilted, the wafer chuck 50 and the probe position detection camera 82 tilt together. It should be noted that the support table 74 is tilted by the angle tilt mechanism 76. It should be noted that the support table 74 may also be a structure that directly or indirectly supports the probe position detection camera 82. Alternatively, the support table 74 may be omitted, and the angle tilt mechanism described later may directly support the Z-axis moving rotation unit 72. The support table 74 is an example of a common support unit.

[0047] The angle tilt mechanism 76 is disposed between the support table 74 and the XY stage 78. The angle tilt mechanism 76 supports the support table 74 and tilts the support table 74. The angle tilt mechanism 76 tilts the support table 74 to integrally tilt the wafer chuck 50 and the probe position detection camera 82. This is because both the wafer chuck 50 and the probe position detection camera 82 are supported by the support table 74 (common support portion). The angle tilt mechanism 76 is an example of a tilt mechanism.

[0048] The angle tilting mechanism 76 has a function of arbitrarily changing the tilting angle of the support table 74 relative to the horizontal plane (XY plane).

[0049] For example, the angle tilt mechanism 76 includes three lifting support members that support the lower surface of the support table 74 at three points. When each lifting support member is raised or lowered, the height of each support point of the support table 74 can be varied. This allows the tilt angle of the support table 74 relative to the horizontal plane to be arbitrarily changed. It should be noted that the above is an example, and the angle tilting mechanism 76 is not limited to this structure, and a known structure can be appropriately adopted.

[0050] The XY stage 78 supports the angle tilt mechanism 76. Furthermore, the Z-axis moving and rotating unit 72 moves in the XY directions. As a result, the wafer chuck 50 moves in the XY directions. This is because the wafer chuck 50 is detachably supported by the Z-axis moving and rotating unit 72. It should be noted that the XY directions are directions parallel to the holding surface 50A of the wafer chuck 50 . Further, moving the wafer chuck 50 in the XY directions means moving the position of the wafer chuck 50 relative to the probe card 56 .

[0051] The XY stage 78 moves the alignment device 70 between multiple measurement units 16 on the same level (layer). The XY stage 78 includes guide rails, a drive mechanism, and a transport tray. The transport tray moves on the guide rails via the drive mechanism. The XY stage 78 is installed on each level of the measurement unit 12. It should be noted that the various elements (such as the guide rails) that make up the XY stage 78 are not shown in the figure.

[0052] The XY stage 78 can include a base, a Y movable stage, and an X movable stage. The base is mounted on the transport tray. The Y movable stage is mounted on the base and can move in the Y-axis direction. The X movable stage is mounted on the Y movable stage and can move in the X-axis direction. The XY stage 78 is an example of a moving mechanism.

[0053] The alignment device 70 includes a Z-axis moving and rotating unit 72 and an XY stage 78. The Z-axis moving and rotating unit 72 supports the wafer chuck 50 so that the wafer chuck 50 can be attached and detached. Thus, the wafer chuck 50 can move in the X-axis, Y-axis, and Z-axis directions and can rotate in the θ direction. The relative position of the wafer chuck 50 to the probe card 56 is aligned by the alignment device 70. The structure of the alignment device 70 described above is an example of an alignment device.

[0054] The alignment device 70 includes a wafer alignment camera (not shown), which is held to the side of the Z-axis moving rotation unit 72 and above the wafer chuck 50 (ie, wafer W) in the Z-axis direction. The wafer alignment camera images the wafer W. Based on the image captured by the wafer alignment camera, the positions of the electrode pads of the semiconductor chip on the wafer W to be inspected are detected.

[0055] (Control Department) Figure 5 This is a functional block diagram of the control unit 90 of the detector 10. Figure 5 3 shows the structure related to the operation of the alignment device 70, and the structure related to other controls is omitted from the illustration.

[0056] Figure 5The control unit 90 shown has an arithmetic circuit composed of various processors and memories. Various processors include CPUs (Central Processing Units), GPUs (Graphics Processing Units), ASICs (Application Specific Integrated Circuits), and programmable logic devices (such as SPLDs (Simple Programmable Logic Devices), CPLDs (Complex Programmable Logic Devices), and FPGAs (Field Programmable Gate Arrays). It should be noted that the various functions of the control unit 90 can be implemented by a single processor or by multiple processors of the same or different types.

[0057] The control unit 90 is connected to the Z-axis moving and rotating unit 72 , the angle tilting mechanism 76 , the XY stage 78 , the probe position detection camera, and the like via various communication interfaces (not shown).

[0058] The control unit 90 includes a central control unit 91, a movement control unit 92, a probe position detection unit 93, and an inclination angle detection unit 94. The central control unit 91, the movement control unit 92, the probe position detection unit 93, and the inclination angle detection unit 94 execute a control program (not shown) read from a memory or the like, thereby performing the functions of each unit.

[0059] The central control unit 91 manages control of the movement control unit 92, the probe position detection unit 93, the tilt angle detection unit 94, etc. In other words, the central control unit 91 manages the entire operation of the control unit 90. The central control unit 91 also receives instructions from the operator via the operation panel 21.

[0060] The probe position detection unit 93 detects the tip position of the probe 66 based on the image captured by the probe position detection camera 82 and the focus position of the probe position detection camera 82. The XY coordinates are detected from the image, and the Z coordinate is detected from the focus position. When the alignment device 70 moves to a measuring section 16 among the plurality of measuring sections 16 to inspect the wafer W, the probe position detection section 93 detects the position of the tip of the probe 66. Information on the position of the tip of the probe 66 detected by the probe position detection section 93 is output to the movement control section 92. Information on the position of the tip of the probe 66 may be stored in a memory (not shown) or the like.

[0061] The tilt angle detection unit 94 detects the tilt angle of the probe card 56 based on the information about the tip positions of the plurality of probes 66 detected by the probe position detection unit 93. Here, a virtual plane passing through the tip positions of the probes 66 is parallel to the probe card 56. This virtual plane is referred to as a "probe virtual plane," and is parallel to the main body of the probe card that holds the probes 66. The tilt angle detection unit 94 detects the tilt angle of the probe card 56 by calculating the tilt angle of the probe virtual plane. The probe virtual plane can be calculated based on the position information of the tips of the plurality of probes 66 detected by the probe position detection unit 93 (i.e., the XYZ coordinates of the tips of the probes 66). It should be noted that the tilt angle of the probe card 56 (or the probe virtual plane) refers to the tilt angle of the probe card 56 relative to the horizontal plane (XY plane). The inclination angle detection unit 94 is an example of a detection member.

[0062] The movement control unit 92 controls the movement of the Z-axis movement rotation unit 72 , the angle tilting mechanism 76 , and the XY stage 78 by driving a driving mechanism (not shown). The movement control unit 92 obtains position information of the electrode pads of the wafer W based on the image of the wafer W input from the wafer alignment camera. Furthermore, the movement control unit 92 acquires the distal end position information of the probe 66 acquired from the probe position detection unit 93 .

[0063] Furthermore, the movement control unit 92 controls the movement of the Z-axis moving rotation unit 72 and the XY stage 78 based on the positional information of both the electrode pads and the probes 66, thereby moving the wafer chuck 50 (wafer W) relative to the probe card 56. Thus, the relative position alignment between the probes 66 and the electrode pads of the wafer W is performed.

[0064] Furthermore, the movement control unit 92 controls the angle tilt mechanism 76 based on the detection result (the tilt angle of the probe card 56) of the tilt angle detection unit 94 so that the holding surface 50A of the wafer chuck 50 is parallel to the probe card 56. Specifically, when the movement control unit 92 determines that the probe card 56 is "tilted" relative to the horizontal plane (XY plane), the movement control unit 92 controls the angle tilt mechanism 76 based on the tilt angle of the probe card 56 to integrally tilt the wafer chuck 50 and the probe position detection camera 82 so that the holding surface 50A of the wafer chuck 50 is parallel to the probe card 56. On the other hand, when the movement control unit 92 determines that the probe card 56 is "not tilted" relative to the horizontal plane, the angle tilt mechanism 76 does not tilt the wafer chuck 50 or the probe position detection camera 82. The movement control unit 92 is an example of a control member that controls the tilt mechanism.

[0065] [Probe inspection method] Next, a probe inspection method using the probe 10 according to the embodiment will be described. Figure 6 Flowchart showing the flow of the probe inspection method. Figure 7 This is a diagram for explaining the probe inspection method.

[0066] like Figure 6 As shown, first, the alignment device 70 is moved to a predetermined measurement unit 16 (step S10). At the measurement unit 16 at the destination, the wafer chuck 50 is supported by the Z-axis moving rotation unit 72 of the alignment device 70. Then, the loading unit 14 supplies a wafer W to the wafer chuck 50. As a result, the wafer W is held on the holding surface 50A of the wafer chuck 50.

[0067] Next, the tilt angle of the probe card 56 is detected (step S12). Specifically, the tilt angle of the probe card 56 is detected based on information about the tip positions of the plurality of probes 66. The tip positions of the probes 66 are detected by the probe position detection unit 93. The tilt angle of the probe card 56 is detected by the tilt angle detection unit 94. like Figure 7 As shown in FIG701 , the position of the tip of the probe 66 is detected based on the image captured by the probe position detection camera 82 and the focus position of the probe position detection camera 82. The position of the tip of the probe 66 is detected while changing the relative position (relative position in the XY directions) between the probe position detection camera 82 and the probe card 56. The relative position of the probe position detection camera 82 and the probe card 56 is adjusted by the XY stage 78 and the Z-axis moving and rotating unit 72. The XY stage 78 and the Z-axis moving and rotating unit 72 are controlled by the movement control unit 92. It should be noted that Figure 7 This is a schematic diagram for explanation, and the tilt angles of the probe card 56 and the tilt mechanism 76 may be exaggerated compared to the actual angles to facilitate understanding of the inspection method. It does not necessarily represent the actual tilt angles.

[0068] Next, based on the tilt angle of probe card 56 detected in step S12, a determination is made as to whether probe card 56 is tilted (step S14). This determination is performed by movement control unit 92. Specifically, based on the detection results of tilt angle detection unit 94, a determination is made as to whether probe card 56 is tilted relative to the horizontal plane (XY plane). In other words, a determination is made as to whether probe card 56 is tilted. In step S14, Figure 7As shown in FIG701 , if the probe card 56 is tilted relative to the horizontal plane, the movement control unit 92 determines that it is tilted (step S14: Yes), and the process proceeds to step S16. On the other hand, if the probe card 56 is not tilted relative to the horizontal direction in step S14, the movement control unit 92 determines that it is not tilted (step S14: No), and the process proceeds to step S18. Step S14 is an example of a detection step.

[0069] When it is determined to be "YES" in step S14, the wafer chuck 50 and the probe position detection camera 82 are tilted integrally (step S16). That is, Figure 7 As shown in 701 , when the probe card 56 is tilted relative to the horizontal direction, the inclination of the wafer chuck 50 and the probe position detection camera 82 are adjusted integrally so that the holding surface 50A of the wafer chuck 50 is parallel to the probe card 56 . The tilt is adjusted by the angle tilt mechanism 76 . The angle tilt mechanism 76 is controlled by the movement control unit 92 based on the detection result of the tilt angle detection unit 94 . Therefore, if Figure 7 As shown in 702 , the probe card 56 can be made parallel to the wafer W. Step S16 is an example of a tilt control step.

[0070] Next, the wafer W and the probe card 56 are relatively aligned (aligned) (step S18 ). The alignment is performed under the control of the control unit 90 . The probe position detection camera 82 captures an image of the tip of the probe 66. The probe position detection unit 93 detects information on the position of the tip of the probe 66 based on the image captured by the probe position detection camera 82 and the focus position of the probe position detection camera 82. Furthermore, the positions of the electrode pads of the semiconductor chip on the wafer W are detected based on the image captured by the wafer alignment camera.

[0071] like Figure 7 As shown in 702, the optical axis of the probe position detection camera 82, which is perpendicular to the upper surface of the wafer chuck 50, is perpendicular to the lower surface of the probe card 56. This is because, in step 16, the angle tilting mechanism 76 tilts the wafer chuck 50 and the probe position detection camera 82 integrally according to the tilt angle of the probe card 56, so that the probe card 56 is parallel to the upper surface of the wafer chuck 50. The probe position detection camera 82 can capture an image of the tips of the probes 66 from the front surface of the probe card 56, and thus can accurately detect the tips of the probes 66. This also improves the accuracy of alignment.

[0072] Next, the motion control unit 92 performs relative position alignment between the wafer W and the probe card 56. This alignment is performed by driving the XY stage 78 and the Z-axis motion and rotation unit 72. Alignment is performed based on the images acquired by the probe position detection camera 82, the focus position, and the results (position information) detected by the wafer alignment camera image. Note that, when performing relative position alignment, correction corresponding to the tilt angle of the probe card 56 is applied to the calculation of the drive amount of each portion. The respective parts refer to the XY stage 78 and the Z-axis moving and rotating unit 72. The driving amount refers to the movement amount in the XYZ directions and the rotation amount in the θ direction. The tilt angle of the probe card 56 is detected by the tilt angle detection unit 94 . The tilt angle of the probe card 56 is equal to the tilt angle of the wafer chuck 50 tilted by the angle tilt mechanism 76 . The calculation method of the correction amount is known, and therefore its details are omitted here.

[0073] After the wafer W held on the wafer chuck 50 and the probe card 56 are aligned relative to each other, the wafer chuck 50 is moved toward the probe card 56. The Z-axis moving rotation unit 72 of the alignment device 70 is controlled by the movement control unit 92, and the wafer chuck 50 moves. The direction of movement is Figure 7 It should be noted that the hollow arrows do not reflect the inclination of the probe card 56 and the Z-axis moving rotation unit 72, but are schematic arrows.

[0074] When the wafer chuck 50 moves a predetermined amount, the probes 66 of the probe card 56 are brought into contact with the electrode pads of the semiconductor chips on the wafer W (step S20). Figure 7 As shown in 704. like Figure 7 As shown by the thick arrows 704 , each probe 66 can be directly pressed against the electrode pad on the wafer W. This is because the probe card 56 and the wafer chuck 50 are adjusted to be parallel in step 16 . Thus, regardless of whether the probe card 56 is tilted with respect to the horizontal direction (XY direction), the probes 66 can be brought into contact with the wafer W uniformly and with high precision.

[0075] After the above-described contact is made, the wafer chuck 50 is suction-held relative to the probe card 56 by vacuum suction or the like. An annular sealing member is formed on the holding surface 50A of the wafer chuck 50. Therefore, by reducing the pressure of the space enclosed by the probe card 56 (or the test head stage 52), the wafer chuck 50, and the sealing member using a suction member, the wafer chuck 50 is suction-held relative to the probe card 56.

[0076] After the wafer chuck 50 is held by adsorption relative to the probe card 56, the fixation between the wafer chuck 50 and the Z-axis moving rotation unit 72 is released. Figure 7 As shown in 705, the Z-axis moving rotating unit 72 is lowered. After that, the wafer level inspection is performed.

[0077] Then, based on Figure 8 A method for cleaning the probes 66 in the probe 10 using the cleaning plate 84 will be described.

[0078] The cleaning process is performed by moving the cleaning plate 84 relative to the probe card 56. The movement of the cleaning plate 84 is controlled by the movement control unit 92. The cleaning plate 84 can be moved by controlling the Z-axis movement rotation unit 72 and the XY stage 78. This control is performed based on the detection results of the probe position detection camera 82. First, the cleaning plate 84 is moved relative to the probe card 56 using the Z-axis moving rotation unit 72, the XY stage 78, and the upper and lower stages 88 supporting the cleaning plate 84, so that the cleaning plate 84 contacts the lower surface of the probe card 56. Next, by moving the cleaning plate 84 relative to the probe card 56, each probe 66 is cleaned.

[0079] like Figure 8 As shown, the cleaning process is performed with the probe card 56 and the cleaning plate 84 parallel to each other. This is because the cleaning plate 84 is also tilted integrally with the wafer chuck 50 and the like by the angle tilt mechanism 76. This can suppress wear on one side of the cleaning plate 84. As a result, the frequency of replacement of the cleaning plate 84 can be reduced, and running costs can be suppressed.

[0080] The angle tilt mechanism 76 can also be used for purposes other than adjusting the parallelism between the probe card 56 and the wafer chuck 50 . Figure 9 1 and 2 are diagrams showing another method of using the angle tilt mechanism 76 . exist Figure 9 In FIG, the probe card 56 is not tilted relative to the horizontal plane. On the other hand, the wafer chuck 50 is adjusted to a non-parallel state relative to the probe card 56 by the angle tilt mechanism 76. As a result, the probe position detection camera 82 is also tilted integrally. Figure 9 In the case of , the inclination angle of the optical axis of the probe position detection camera 82 is an angle α with respect to the Z axis. When the optical axis of the probe position detection camera 82 is tilted with respect to the Z-axis direction, the range of the XY plane that can be observed by the probe position detection camera 82 can be expanded. This makes it possible to easily detect, for example, a probe card 56 having a large aperture greater than 300 mm or positioning marks around the probe card 56 .

[0081] [Modification] In the above embodiment, the tilt angle of the probe card 56 is detected based on the information of the tip position of the probe 66. The above is a non-limiting example of detecting the tilt angle of the probe card. Another example of a method for detecting the tilt angle of the probe card 56 is described below. First, distance sensors are placed at different locations on the holding surface 50A of the wafer chuck 50. The distance sensors at each location are then used to measure the relative distance to the probe card 56. The tilt angle of the probe card 56 can be calculated based on the measurement results.

[0082] In the above embodiment, the case where the probe 10 is a multi-stage probe including a plurality of measuring units 16 has been described. However, the present invention is also applicable to a probe including only one measuring unit.

[0083] The embodiments of the detector have been described in detail above, but it is understood that some improvements or modifications may be made to the present disclosure without departing from the spirit of the present disclosure. Description of Reference Signs

[0084] 10: Detector; 11: Housing; 12: Measuring unit; 13: Frame; 14: Loading unit; 16: Measuring unit; 18: Loading port; 20: Wafer box; 21: Operation panel; 22: Transport unit; 24: Transport arm; 50: Wafer chuck; 50A: Holding surface; 52: Test head stage; 54: Test head; 56: Probe card; 66: Probe; 70: Alignment device; 72: Z-axis moving rotation unit; 72A: Upper surface; 74: Support workbench; 74A: Upper surface; 76: Angle tilting mechanism; 78: XY stage; 82: Probe position detection camera; 84: Cleaning plate; 85: Holding component; 87: Holding component; 88: Upper and lower stages; 90: Control unit; 91: Central control unit; 92: Movement control unit; 93: Probe position detection unit; 94: Tilt angle detection unit; CL: Center axis; W: Wafer; α: Angle.

Claims

1. A probe comprising a plurality of measuring sections, each of which is provided with a wafer chuck having a holding surface for holding a wafer and a probe card having a plurality of probes on a surface facing the holding surface, wherein: The prober includes an alignment device configured to be movable between the plurality of measurement units, and to support the wafer chuck in a manner such that the wafer chuck can be freely attached and detached at the measurement unit at the movement destination, thereby performing relative position alignment of the wafer chuck with respect to the probe card. The alignment device has: a probe position detection camera that detects the tip position of the probe at a position facing the probe card; and A tilt mechanism tilts the wafer chuck and the probe position detection camera integrally.

2. The detector according to claim 1, wherein The alignment device includes a common support portion that commonly supports the wafer chuck and the probe position detection camera. The tilt mechanism tilts the common support portion to integrally tilt the wafer chuck and the probe position detection camera.

3. The detector according to claim 2, wherein: The alignment device includes a moving mechanism that moves the wafer chuck relative to the probe card in a direction parallel to the holding surface. The tilting mechanism is provided between the moving mechanism and the common support portion.

4. The detector according to any one of claims 1 to 3, wherein: have: a detection member that detects a tilt angle of the probe card; and A control member controls the tilt mechanism based on a detection result of the detection member so that the holding surface and the probe card are parallel.

5. The detector according to claim 4, wherein The detecting member detects a tilt angle of the probe card based on a detection result of the probe position detecting camera.

6. The detector according to any one of claims 1 to 3, wherein: The alignment device has a cleaning plate for cleaning the tip of the probe, The tilting mechanism tilts the cleaning plate and the wafer chuck integrally.

7. A probe inspection method, comprising: a probe inspection method for a probe having a plurality of measuring sections, wherein the plurality of measuring sections are provided with a wafer chuck having a wafer holding surface and a probe card having a plurality of probes on a surface facing the wafer holding surface. The prober includes an alignment device configured to be movable between the plurality of measurement units, and to support the wafer chuck in a manner such that the wafer chuck can be freely attached and detached at the measurement unit at the movement destination, thereby performing relative position alignment of the wafer chuck with respect to the probe card. The alignment device includes: a probe position detection camera, which detects the tip position of the probe at a position facing the probe card; and a tilting mechanism that tilts the wafer chuck, wherein The probe inspection method comprises: a detection step, in which the tilt angle of the probe card is detected; and A tilt control step of controlling the tilt mechanism based on the detection result of the detection step to tilt the wafer chuck and the probe position detection camera integrally so that the holding surface becomes parallel to the probe card.

8. The probe inspection method according to claim 7, wherein: The detecting step includes detecting a tilt angle of the probe card based on a detection result of the probe position detection camera.

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