Broken line processing method

Abstract

The invention provides a broken line processing method, and relates to the technical field of crystal cutting, and the processing method comprises the steps: obtaining the cutting depth of a crystal when a cutting line net is broken, and based on the cutting depth of the crystal, enabling the position of the crystal to be a first position, enabling the distance between the first position and the tangent plane of the crystal to be a first distance, and enabling the first distance to be smaller than the cutting depth; and the cutting wire net is still positioned in the cutting gap of the crystal. A second position is obtained, the second position is the broken line position of the cutting line net and is the end of the undisordered part of the cutting line net, and broken lines do not exist in the undisordered part of the cutting line net. On the basis of the undisordered part of the cutting wire net, supplementary wiring of the cutting wire net is carried out in the wiring direction of the cutting wire net until the second position exceeds the range where the crystal is located, supplementary wiring of the cutting wire net is completed, tool setting can be achieved while supplementary wiring is carried out, concentrated tool setting after wiring is avoided, and the wiring efficiency is improved. And the risks such as re-tool setting deviation and wiring quantity error are avoided.

Description

Technical Field

[0001] The present application relates to the technical field of crystal cutting, and in particular to a method for processing broken wires. Background Art

[0002] Silicon carbide (SiC) is one of the third-generation semiconductor materials. However, due to the high hardness, high brittleness, good wear resistance, and extremely stable chemical properties of SiC crystals, the cutting process of SiC wafers is very difficult. Nowadays, multi-wire cutting is usually used to cut SiC crystals, but multi-wire cutting has the problem of wire breakage. Especially under the premise that the current multi-wire cutting process requires reducing the loss caused by the cutting process, the diameter of the cutting wire used is getting smaller and smaller, and the risk of wire breakage is also increasing. Therefore, how to effectively deal with the wire breakage problem has become a key issue for those skilled in the art. Summary of the Invention

[0003] In view of this, this application provides a disconnection processing method, the solution is as follows:

[0004] A wire breakage treatment method is applied to a multi-wire sawing device for cutting crystals, the multi-wire sawing device comprising a wire feed sheave and a wire take-up sheave, a cutting wire net wound around the wire feed sheave and the wire take-up sheave, the cutting wire net comprising a plurality of cutting coils connected end to end in sequence; the treatment method comprises:

[0005] Acquiring a cutting depth of the crystal, where the cutting depth is the cutting depth of the crystal by the cutting wire mesh when the cutting wire mesh is broken;

[0006] Based on the cutting depth, the position of the crystal is changed to a first position, the distance between the first position and the cut surface of the crystal is a first distance, the first distance is less than the cutting depth, and the cutting wire mesh is still located in the cutting gap of the crystal; wherein the cutting wire mesh starts at the cut surface of the crystal and cuts the crystal;

[0007] Acquiring a second position, where the second position is a broken wire position of the cutting wire web and is an end of an untangled portion of the cutting wire web, where no broken wire exists;

[0008] Based on the undisordered part of the cutting wire mesh, the cutting wire mesh is supplemented with wiring along the routing direction of the cutting wire mesh until a cutting coil is inserted into the cutting gap in the crystal where there is no cutting coil, and the second position is beyond the range of the crystal, thereby completing the supplementary wiring of the cutting wire mesh.

[0009] Optionally, the first distance has a value range of 0.8 mm to 1.2 mm, including endpoint values.

[0010] Optionally, the second position is located between the wire feeding side sheave and the wire taking-up side sheave; or

[0011] The second position is located on the take-up side sheave.

[0012] Optionally, obtaining the cutting depth of the crystal includes:

[0013] Acquiring a third position, where the third position is a position of the cutting wire mesh relative to the cutting surface of the crystal when the cutting wire mesh is broken;

[0014] The cutting depth is acquired based on the third position, where the cutting depth is the distance between the third position and the cutting surface of the crystal.

[0015] Optionally, obtaining the second position includes:

[0016] Acquiring a fourth position, and after acquiring the fourth position, fixing the fourth position using a first fixing element, wherein the fourth position is located on the take-up side sheave;

[0017] acquiring the second position based on the fourth position, and fixing the second position using a second fixing element;

[0018] Among them, along the routing direction of the cutting wire net, the distance between the fourth position and the second position is smaller than the distance between the wire supply side sheave and the wire take-up side sheave, the fourth position and the second position are located in the same cutting coil, and the fourth position is located in the uncluttered part of the cutting wire net.

[0019] Optionally, based on the cutting depth, changing the position of the crystal to the first position includes:

[0020] After fixing the fourth position, changing the position of the crystal to the first position based on the cutting depth;

[0021] After changing the position of the crystal to the first position, inserting a separator into a cutting gap in the crystal where no cutting coil is formed, so as to prevent the cutting gap of the crystal from being aligned, and withdrawing the separator after completing the compensation wiring of the cutting wire network;

[0022] After the position of the crystal is changed to the first position, the second position is obtained.

[0023] Optionally, fixing the second position using the second fixing element includes:

[0024] Marking the second position with a second fixing element, and bonding the second position and N cutting coils adjacent to the second position, wherein the N cutting coils are located in an undisordered portion of the cutting wire web, and 3≤N≤6;

[0025] Thereafter, the portion of the cutting wire web other than the undisturbed portion thereof is removed.

[0026] Optionally, based on the undisordered portion of the cutting wire mesh, supplementary wiring of the cutting wire mesh is performed along the routing direction of the cutting wire mesh until a cutting gap in the crystal where no cutting coil is present has a cutting coil, and the second position is beyond the range where the crystal is located, comprising:

[0027] Based on the untangled portion of the cutting wire mesh, the cutting wire mesh is supplementarily routed along the routing direction from the wire feeding side sheave to the wire taking-up side sheave at a first routing speed until a cutting coil is found in a cutting gap in the crystal where no cutting coil is found, and the second position is beyond the range where the crystal is located;

[0028] The first routing speed has a value range of 0.01 m / s to 0.04 m / s, including endpoint values.

[0029] Optionally, based on the undisordered portion of the cutting wire mesh, supplementary wiring of the cutting wire mesh is performed along the routing direction of the cutting wire mesh until a cutting gap in the crystal where no cutting coil exists has a cutting coil, and the second position is beyond the range where the crystal is located, further comprising:

[0030] After the second position exceeds the area where the crystal is located, the position of the crystal is changed to a fifth position, the distance between the fifth position and the cutting surface of the crystal is a second distance, and the second distance is less than the cutting depth and greater than the first distance;

[0031] Among them, the distance between the fifth position and the third position is the third distance, the value range of the third distance is 0.1mm~0.3mm, including the endpoint value, and the third position is the position of the cutting wire mesh relative to the cutting surface of the crystal when the cutting wire mesh is broken.

[0032] Optionally, based on the undisordered portion of the cutting wire mesh, supplementary wiring of the cutting wire mesh is performed along the routing direction of the cutting wire mesh until a cutting gap in the crystal where no cutting coil exists has a cutting coil, and the second position is beyond the range where the crystal is located, further comprising:

[0033] After the second position exceeds the area where the crystal is located, the wire mesh continues to be routed along the routing direction from the wire feeding side sheave to the wire taking-up side sheave at a second routing speed until the end of the cutting wire mesh at the second position is connected to the other end of the cutting wire mesh and fixed to each other;

[0034] Continue routing the wire at a third routing speed along the routing direction from the wire feeding side sheave to the wire taking-up side sheave until at least a portion of the area where the end portion of the cutting wire web at the second position meets the other end portion of the cutting wire web is covered by the wire;

[0035] The second routing speed has a value range of 0.02 m / s to 0.04 m / s, including the endpoint values, and the third routing speed has a value range of 0.4 m / s to 0.6 m / s, including the endpoint values.

[0036] Compared with the related art, the technical solution of this application has the following beneficial effects:

[0037] The processing method includes: obtaining the cutting depth of the crystal when the cutting wire mesh is broken, and based on the cutting depth of the crystal, the position of the crystal is a first position, the distance between the first position and the cut surface of the crystal is a first distance, the first distance is less than the cutting depth, and the cutting wire mesh is still located in the cutting gap of the crystal. Obtaining a second position, the second position is the broken position of the cutting wire mesh, and is the end of the untangled part of the cutting wire mesh, and there is no broken wire in the untangled part of the cutting wire mesh. Based on the untangled part of the cutting wire mesh, the cutting wire mesh is supplemented and wired along the routing direction of the cutting wire mesh until a cutting coil is found in the cutting gap in the crystal where there is no cutting coil, and the second position is beyond the range of the crystal, completing the supplementary wiring of the cutting wire mesh. It can be seen from this that the use of this wire break processing method can achieve supplementary wiring of the cutting wire net without separating the crystal and the cutting wire net, so that in the process of supplementary wiring of the cutting wire net, tool alignment can be achieved at the same time as the supplementary wiring, that is, in the process of supplementary wiring, the supplementary cutting coil can be directly inserted into the cutting gap where there is no cutting wire net, avoiding centralized tool alignment after supplementary wiring, improving the efficiency of wire break processing, and avoiding the risks of re-tooling deviation and wiring quantity error brought about by centralized tool alignment after wiring. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without any creative work.

[0039] Figure 1 It is a structural schematic diagram of a multi-wire cutting device;

[0040] Figure 2 A flowchart of a disconnection processing method provided in this application;

[0041] Figure 3 Schematic diagram of the first position, the third position and the fifth position in the cutting gap of the crystal;

[0042] Figure 4 Schematic diagram of the crystal cutting gap

[0043] Figure 5 This is a flowchart of a disconnection processing method provided by this application. DETAILED DESCRIPTION

[0044] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0045] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0046] As can be seen from the background technology section, multi-wire cutting has the problem of wire breakage, and as the diameter of the cutting wires of the cutting wire network becomes smaller and smaller, the risk of wire breakage becomes greater and greater.

[0047] Specifically, if the cutting wire mesh breaks during the crystal cutting process, existing methods typically require separating the wire mesh from the crystal and then rerouting the wire mesh. However, once the wire mesh is separated from the crystal, the cutting positions on the crystal naturally converge, freed from the constraints of the wire mesh. This typically requires re-cutting each cutting position with a blade and resetting the wire mesh into position to complete the tool alignment operation, resulting in low efficiency and risks such as errors in wiring quantity and re-calibration deviations.

[0048] Based on the above, the present application provides a wire breakage processing method, which is applied to a multi-wire cutting device for cutting crystals, such as Figure 1 As shown, Figure 1The diagram is a schematic diagram of the structure of a multi-wire cutting device, which includes a feed-side sheave 100 and a take-up side sheave 200, and a cutting wire net 300 wound on the feed-side sheave 100 and the take-up side sheave 200. The cutting wire net 300 includes a plurality of cutting coils 302 connected end to end in sequence, and the first cutting coil 302 and the last cutting coil 302 of the plurality of cutting coils 302 are also connected end to end, that is, the cutting wire net is a large closed cutting coil composed of a plurality of cutting coils connected end to end, and the closed cutting coil is wound between the feed-side sheave 100 and the take-up side sheave 200. It should be noted that according to Figure 1 It can be seen that the cutting coils 302 of the cutting wire mesh 300 are arranged along the extension direction of the wire feed sheave 100 and the wire take-up sheave 200, and the cutting coils 302 of the cutting wire mesh 300 include a horizontally extending portion 3022 and an obliquely extending portion 3024. The horizontally extending portion 3022 is used to cut the crystal, and the obliquely extending portion 3024 is used to connect to the next cutting coil 302. It should also be noted that the routing direction of each cutting coil 302 in the cutting wire mesh 300 is from the wire feed sheave 100 to the wire take-up sheave 200.

[0049] like Figure 2 As shown, Figure 2 This is a flowchart of a disconnection processing method provided in this application, which includes:

[0050] S1: Obtain the cutting depth of the crystal. The cutting depth of the crystal is the cutting depth of the crystal by the cutting wire mesh when the cutting wire mesh is broken. In other words, the cutting depth of the crystal is the cutting depth of the crystal by the cutting wire mesh when the cutting wire mesh is broken.

[0051] S2: Based on the cutting depth of the crystal, change the position of the crystal to the first position A1. Figure 3 As shown, Figure 3It is a schematic cross-sectional view of the crystal along the cutting direction. The distance between the first position A1 and the cutting surface of the crystal is the first distance L1. The first distance L1 is less than the above-mentioned cutting depth, and the cutting wire mesh is still located in the cutting gap formed by the cutting wire mesh when the crystal is cut, that is, the position of the crystal is changed, but the crystal and the cutting wire mesh are not separated. Among them, the cutting wire mesh cuts the crystal with the cutting surface of the above-mentioned crystal as the starting position. It should be noted that, since the distance between the first position A1 and the cutting surface of the crystal is less than the cutting depth of the crystal, the above-mentioned change in the position of the crystal to the first position A1 is specifically to change the relative position relationship between the crystal and the cutting wire mesh, so that the crystal and the cutting wire mesh no longer maintain the position relationship when the cutting wire mesh cuts the crystal, that is, the cutting wire mesh is no longer located at the bottom of the cutting gap formed by the crystal, but moves a certain distance toward the top of the cutting gap, that is, moves a certain distance toward the cutting surface of the crystal. At this time, the cutting wire mesh is closer to the cutting surface of the crystal.

[0052] S3: Obtaining a second position A2. Second position A2 is the location of the wire break in the cutting wire mesh and is the end of the untangled portion of the cutting wire mesh. The untangled portion of the cutting wire mesh does not contain any wire breakage. It should be noted that when a wire break occurs in the cutting wire mesh, it may be broken into two ends or multiple segments. Depending on the wire breakage, one of the segments is selected as the untangled portion. At least one of the two ends of the untangled portion is the location of the wire breakage, depending on the specific circumstances.

[0053] S4: Based on the undisordered part of the cutting wire mesh, the cutting wire mesh is supplemented with wiring along the routing direction of the cutting wire mesh until there is a cutting coil in the cutting gap where there is no cutting coil in the crystal, and the second position A2 is beyond the range of the crystal, and the supplementary wiring of the cutting wire mesh is completed. It should be noted that, until there is a cutting coil in the cutting gap where there is no cutting coil in the crystal, and the second position A2 is beyond the range of the crystal, it can be until there is a cutting coil in the cutting gap where there is no cutting coil in the crystal, and after the last cutting gap where there is a cutting coil, when the second position A2 comes near the cutting surface of the crystal again, the wiring is stopped, and the entry of the cutting gap where there is no cutting coil in the crystal is completed. It should also be noted that the entry of the cutting coil in the cutting gap where there is no cutting coil in the crystal is also the tool setting of the cutting gap where there is no cutting coil in the crystal.

[0054] As can be seen from the above, when the cutting wire mesh breaks, the cutting depth is determined and the position of the crystal is changed based on the cutting depth. This allows the cutting wire mesh to remain within the cutting gap of the crystal, i.e., without the cutting wire mesh being separated from the crystal. The relative position between the cutting wire mesh and the crystal is then changed, bringing the cutting wire mesh closer to the cutting surface of the crystal. After the relative position between the cutting wire mesh and the crystal is changed to bring the cutting wire mesh closer to the cutting surface of the crystal, the cutting wire mesh is rerouted until the second position A2 exceeds the area where the crystal is located, completing the rerouted cutting wire mesh.

[0055] Thus, this wire breakage processing method allows for supplementary wiring of the cutting wire mesh without separating the crystal from the cutting wire mesh. This allows tool alignment (also known as wire insertion) to be performed simultaneously with the supplementary wiring of the cutting wire mesh. This means that during the supplementary wiring process, the supplementary cutting coil can be directly inserted into the cutting gap where the cutting wire mesh is not yet cut. In other words, this wire breakage processing method allows for simultaneous supplementary wiring and tool alignment. Compared to existing technologies, this method avoids the need for centralized tool alignment after supplementary wiring, improving the efficiency of wire breakage processing while also avoiding the risks of tool alignment deviation and wiring quantity errors associated with centralized tool alignment after wiring.

[0056] In one embodiment of the present application, the first distance ranges from 0.8 mm to 1.2 mm, including the endpoint values, but the present application does not limit this, and the specific range depends on the specific situation.

[0057] In one embodiment of the present application, the second position may be located between the supply side sheave 100 and the take-up side sheave 200 (e.g. Figure 1 As shown), or the second position can also be located on the take-up side groove wheel 200. That is to say, the wire breakage processing method can be used for cutting wire mesh wire to break in the middle, and can also be used for take-up side wire breakage, with a wide range of applications and strong practicality.

[0058] In one embodiment of the present application, obtaining the cutting depth of the crystal includes:

[0059] Obtain a third position A3, which is the position of the cutting wire mesh relative to the cut surface of the crystal when the cutting wire mesh breaks. It should be noted that the third position A3 is the position of the cutting wire mesh relative to the cut surface of the crystal when the cutting wire mesh breaks, specifically the position of the undisrupted portion of the cutting wire mesh relative to the cut surface of the crystal when the cutting wire mesh breaks.

[0060] Based on the third position A3, the cutting depth is obtained. The cutting depth is the distance between the third position A3 and the cutting surface of the crystal, that is, the cutting depth is the cutting depth of the crystal by the cutting wire mesh when the cutting wire mesh is broken, and it is also the depth of the cutting gap cut by the cutting wire mesh on the crystal when the cutting wire mesh is broken.

[0061] Specifically, if Figure 4 As shown, Figure 4 Schematic diagram of crystal cutting. Figure 4 400 represents the crystal, and multiple third positions A3 are obtained and recorded. The third position A3 is the cutting position where the crystal is cut by the cutting wire mesh and the cutting depth of the corresponding cutting position when the cutting wire mesh is in a broken state. That is, the third position A3 can represent the position of the cutting gap after the crystal is cut by the cutting wire mesh and the depth of the cutting gap.

[0062] In one embodiment of the present application, obtaining the second position A2 includes:

[0063] A fourth position A4 is obtained, and after obtaining the fourth position A4, the fourth position A4 is fixed using a first fixing element. The fourth position A4 is located on the take-up sheave 200. It should be noted that fixing the fourth position A4 using the first fixing element refers to fixing the portion of the cutting wire web corresponding to the fourth position A4, and the first fixing element can be an element with adhesive properties such as tape.

[0064] Based on the fourth position A4, a second position A2 is obtained and fixed using a second fixing element. As described above, fixing the second position A2 using the second fixing element refers to fixing the portion of the cutting wire web corresponding to the second position A2. The second fixing element can be an adhesive element such as tape. This explanation applies to all references to fixing a specific position in the following text and is not further elaborated.

[0065] Among them, along the routing direction of the cutting wire mesh, the distance between the fourth position A4 and the second position A2 is smaller than the distance between the wire feeding side sheave 100 and the wire taking-up side sheave 200, the fourth position A4 and the second position A2 are located in the same cutting coil, and the fourth position A4 is located in the uncluttered part of the cutting wire mesh.

[0066] As can be seen from the above, the fourth position A4 is a position in the untangled portion of the cutting wire mesh that is closer to the second position A2, and the fourth position A4 is located on the take-up side sheave 200. Since the cutting wire mesh is wound around the supply side sheave 100 and the take-up side sheave 200, the fourth position A4 being located on the take-up side sheave 200 facilitates the fixation of the fourth position A4. Furthermore, since the fourth position A4 is a position in the untangled portion of the cutting wire mesh that is closer to the second position A2, once the fourth position A4 is fixed, the fixation of the fourth position A4 facilitates the fixation of the second position A2. It should be noted that the fourth position A4 can also be fixed on the supply side sheave 100, and this is not limited to this in the present application, and the specific situation will depend on the situation.

[0067] In one embodiment of the present application, based on the cutting depth of the crystal, that is, based on the cutting depth of the crystal when the cutting wire mesh is broken, changing the position of the crystal to the first position A1 includes:

[0068] After fixing the fourth position A4, the position of the crystal is changed to the first position A1 based on the cutting depth of the crystal, so that the cutting wire mesh is closer to the cutting surface of the crystal without separating from the crystal. In other words, the position of the crystal is raised relative to the position of the cutting wire mesh, but the cutting wire mesh is still kept in the cutting slit of the crystal, so that the distance between the cutting wire mesh and the cutting surface of the crystal is reduced, that is, the depth of the cutting wire mesh into the cutting slit of the crystal is shallow, so that during the supplementary wiring process of the cutting wire mesh, the cutting coil fixed at the second position A2 can enter the cutting slit of the crystal without destroying the fixed state of the cutting coil at the second position A2. That is, during the process of supplementing the wire mesh, the cutting coil fixed at the second position A2 can enter the cutting slit of the crystal in a fixed state without destroying the fixed state of the cutting coil, and does not affect the supplementary wiring of the cutting wire mesh.

[0069] After the crystal is positioned at the first position A1, a separator (e.g., a blade) is inserted into the cut slits of the crystal where the coils are not cut to prevent the cut slits from aligning. The separator is removed after the compensation routing of the cut wire mesh is completed. After the crystal is positioned at the first position A1, a second position A2 is obtained, and subsequent steps are continued.

[0070] It should be noted that after changing the position of the crystal to the first position A1, a separator is inserted into the cutting gap in the crystal where no coil is cut. Specifically, a separator can be inserted into the cutting gap with a larger cutting depth to suppress the closing of the cutting gap where no coil is cut and the cutting depth is larger, thereby avoiding the need to segment the closed cutting gaps one by one during the supplementary wiring process, thereby improving the efficiency of wire breakage processing. It should also be noted that after inserting the separator into the cutting gap with a larger cutting depth, the second position A2 can be obtained based on the fourth position A4, and the second position A2 can be fixed using the second fixing unit. And the depth value of the cutting gap with a larger cutting depth can be determined based on the material of the crystal. Specifically, if the material of the crystal is easier to fit naturally, the above-mentioned depth value is smaller. If it is relatively difficult to fit naturally, the above-mentioned depth value is larger.

[0071] In one embodiment of the present application, securing the second position A2 with the second securing element includes: marking the second position A2 with the second securing element, and bonding the second position A2 and N cutting coils adjacent to the second position A2, the N cutting coils being located in an untangled portion of the cutting wire web, where 3 ≤ N ≤ 6. It should be noted that marking the second position A2 with the second securing element facilitates observation of the relative positional relationship between the second position A2 and the crystal during the supplemental wiring process, thereby facilitating determination of whether the supplemental wiring is complete.

[0072] Afterwards, the portion of the cutting wire web other than the untangled portion is removed, that is, the portion of the cutting wire web that cannot be reused is removed, and the portion of the cutting wire web that can continue to cut the crystal is retained.

[0073] It should be noted that when fixing the second position A2, bonding the cutting coil at the second position A2 and its adjacent N cutting coils can make the cutting coil at the second position A2 more firmly fixed, which is convenient for subsequent supplementary wiring of the cutting wire network.

[0074] In one embodiment of the present application, the processing method further includes: after fixing the second position A2, releasing the fourth position A4, and then performing additional wiring along the routing direction of the cutting wire mesh based on the portion of the crystal cutting slit that does not include the cutting coil, until the portion of the crystal cutting slit that does not include the cutting coil is filled with the cutting coil. It should be noted that fixing the fourth position A4 to the take-up side sheave 200 will prevent the wire from being routed. Therefore, after fixing the second position A2, the fourth position A4 needs to be released.

[0075] In one embodiment of the present application, based on the undisordered portion of the cutting wire mesh, the cutting wire mesh is supplemented and routed along the routing direction of the cutting wire mesh until a cutting gap in the crystal where no cutting coil exists has a cutting coil, and the second position A2 exceeds the range where the crystal is located.

[0076] On the basis of the undisordered part of the cutting wire mesh, the cutting wire mesh is supplemented with wiring along the routing direction from the wire supply side groove wheel to the wire take-up side groove wheel at a first routing speed until the cutting slit where there is no cutting coil in the crystal enters the wire with a cutting coil, and the second position A2 is beyond the range of the crystal. Among them, the value range of the first routing speed can be 0.01m / s-0.04m / s, including the end point value, so that during the supplementary wiring process, the routing speed is slower to avoid damaging the crystal. At the same time, it is also helpful to observe whether the cutting coil of the supplementary wiring enters the cutting slit during the supplementary wiring process, and if the cutting coil of the wire mesh does not enter the cutting slit, it can be adjusted in time to ensure that the cutting coil of the supplementary wiring enters the cutting slit accurately and in time. It should be noted that when the cutting coil of the supplementary wire mesh does not enter the cutting slit, the cutting coil can be guided into the corresponding cutting slit by pressing or inserting a blade.

[0077] In one embodiment of the present application, based on the undisrupted portion of the cutting wire mesh, additional wiring of the cutting wire mesh is performed along the routing direction of the cutting wire mesh until a cutting coil is inserted into the cutting slit in the crystal where no cutting coil is present, and the second position A2 exceeds the range of the crystal. The method further includes: after the second position A2 exceeds the range of the crystal, the position of the crystal is changed to a fifth position A5, specifically the position of the crystal is changed from the first position A1 to the fifth position A5. The distance between the fifth position A5 and the cutting surface of the crystal is a second distance L2, which is less than the cutting depth and greater than the first distance, so that the cutting wire mesh is further away from the cutting surface relative to the first position A1, that is, the cutting wire mesh is closer to the bottom of the cutting slit relative to the first position A1. The distance between the fifth position A5 and the third position A3 is a third distance, and the third distance ranges from 0.1 mm to 0.3 mm, inclusive. The third position A3 is the position of the cutting wire mesh relative to the cutting surface of the crystal when the cutting wire mesh is broken.

[0078] As can be seen from the above, after the second position A2 exceeds the range where the crystal is located, the position of the crystal is changed so that the cutting wire mesh is closer to the bottom of the cutting slit relative to the first position A1. Because when the cutting wire mesh is located at the first position A1, the cutting surface of the specific crystal is closer and farther away from the bottom of the cutting slit of the crystal, there is a larger gap between the cutting wire mesh and the bottom of the cutting slit of the crystal. Therefore, after the second position A2 exceeds the range where the crystal is located, the position of the crystal can be changed so that the cutting wire mesh is closer to the bottom of the cutting slit relative to the first position A1, so as to facilitate continued cutting of the crystal. In other words, after the second position A2 exceeds the range where the crystal is located, the depth of the cutting wire mesh in the cutting slit of the crystal can be changed by changing the position of the crystal, so that when the cutting wire mesh with additional wiring cuts the crystal, the crystal can be repeatedly cut according to the original cutting slit to ensure the cutting effect of the crystal.

[0079] It should be noted that the second position A2 is outside the range of the crystal. Before the crystal is moved to the fifth position A5, the separator can be pulled out, but the pulling direction of the separator is required to be parallel to the extending direction of the cutting gap.

[0080] In one embodiment of the present application, based on the undisordered portion of the cutting wire mesh, the cutting wire mesh is supplemented and routed along the routing direction of the cutting wire mesh until a cutting gap in the crystal where no cutting coil exists has a cutting coil, and the second position A2 is beyond the range where the crystal is located, further comprising:

[0081] After the second position A2 exceeds the range where the crystal is located, the wire mesh continues to be routed along the routing direction from the wire feeding side sheave to the wire taking-up side sheave at the second routing speed until the end of the cutting wire mesh at the second position A2 is connected to the other end of the cutting wire mesh and fixed to each other. It should be noted that the two ends of the cutting wire mesh can be fixed to each other by an element with an adhesive function. Specifically, after the second position A2 exceeds the range where the crystal is located, the position of the end of the cutting wire mesh at the second position A2 is changed along the routing direction of the cutting wire mesh at the second routing speed, so that the end of the cutting wire mesh at the second position A2 and the other end of the cutting wire mesh are fixed to each other, for example, they are fixed to the wire taking-up side sheave 200 using tape.

[0082] At the third routing speed, the wiring continues along the routing direction from the wire feeding side sheave to the wire taking-up side sheave until at least a portion of the area where the end of the cutting wire net at the second position A2 meets the other end of the cutting wire net is covered by the wiring. The second routing speed has a value range of 0.02m / s to 0.04m / s, including the endpoint values, and the third routing speed has a value range of 0.4m / s to 0.6m / s, including the endpoint values. Specifically, the wiring continues along the routing direction of the cutting wire net at the third routing speed at the locations where the two ends of the cutting wire net are fixed to each other, until at least a portion of the area where the end of the cutting wire net at the second position A2 meets the other end of the cutting wire net is covered by the wiring, so that the wiring can compress the above-mentioned connection, thereby effectively avoiding the cutting wire net from being broken at the connection between the cutting wire nets, thereby ensuring the reliability of the cutting wire net.

[0083] It should be noted that the second routing speed may range from 0.02m / s to 0.04m / s, and the third routing speed may range from 0.4m / s to 0.6m / s, both inclusive. Because routing at the third routing speed is only used to secure the junctions of the two ends of the cutting wire mesh, the routing speed can be faster, and thus the third speed can be faster than the second speed.

[0084] The following describes in detail the disconnection processing method provided by this application through specific embodiments. Figure 5 The specific steps are as follows:

[0085] Acquire and record the third position A3, that is, the position and corresponding cutting depth of the crystal cut by the cutting wire mesh when the cutting wire mesh breaks. The crystal cutting depth is obtained based on the third position A3. Furthermore, while acquiring the third position A3 and the crystal cutting depth based on the third position A3, the wire mesh routing direction, remaining wire mesh, crystal surface condition, and the cutting chamber and sheave chamber of the multi-wire sawing equipment at the time of the break can be observed to facilitate subsequent wire break handling.

[0086] Wipe off the mortar on the wire feeding side sheave 100 and the wire taking-up side sheave 200, and remove the scattered wire mesh, so as to facilitate the subsequent acquisition and fixation of the second position A2. The above-mentioned removal of the scattered wire mesh can specifically include removing the winding with scissors, and solving the wire pressing situation by routing the wires when the relative position relationship between the crystal and the cutting wire mesh remains unchanged. It should be noted that if the second position A2 is located between the wire feeding side sheave 100 and the wire taking-up side sheave 200, that is, the center line is broken, the above-mentioned removal of the scattered wire mesh includes removing the scattered wire mesh on the wire taking-up side sheave 200, and then removing the scattered wire mesh between the wire feeding side sheave 100 and the wire taking-up side sheave 200; if the second position A2 is located on the wire taking-up side sheave 200, the above-mentioned removal of the scattered wire mesh includes removing the scattered wire mesh between the wire feeding side sheave 100 and the wire taking-up side sheave 200.

[0087] After removing the scattered wire web, the fourth position A4 is obtained and fixed, specifically by using an adhesive tape (first fixing element) to stick to the sheave on the wire-breaking side to fix and mark the fourth position A4.

[0088] Based on the cutting depth of the crystal, the position of the crystal is changed to the first position A1. Specifically, relative to the position of the cutting wire mesh, the position of the crystal is raised to the vicinity of the cutting wire mesh. Specifically, the cutting wire mesh is controlled to remain in the crystal, and the cutting surface of the crystal is controlled to be about 0.8mm-1.2mm below the cutting wire mesh.

[0089] There is no cutting coil in the cutting gap of the crystal, and a blade (separator) is inserted into the cutting gap with a deeper cutting depth to prevent the cutting gap from naturally fitting due to the cutting depth being too deep, which will make it difficult to insert the supplementary wiring and produce larger line marks.

[0090] Secure the second location A2 by applying tape (the second securing element) to the edge of the wire mesh on the broken side (second location A2) and attaching approximately three to six adjacent cut coils. Use scissors to cut the wire mesh beyond the second securing element. Unsecure the fourth location A4 by removing the tape (the first securing element) at that location.

[0091] Use the control panel of the multi-wire cutting equipment to adjust the routing direction from the feed-side sheave 100 to the take-up-side sheave 200, control the routing speed to 0.01m / s-0.04m / s, and perform supplementary routing. During the supplementary routing process, pay attention to the adhesion of the second fixing element. If it is loose, stop routing and re-stick it. In addition, during the supplementary routing process, observe the relative position of the second position A2 and the crystal. After the cutting wire network formed by the supplementary routing passes through the last cutting gap of the crystal, pay attention to the position of the tape (second fixing element). When the tape (second fixing element) comes near the cutting surface of the crystal again, stop routing. That is, stop routing when the second fixing element is outside the range of the crystal. That is, stop routing when the second position A2 is outside the range of the crystal.

[0092] Observe the insertion of the supplementary wire cutting coils into the crystal's cutting slits. If any wires are not inserted, guide the wire mesh into the slits by pressing or inserting a blade until all the cutting coils of the wire mesh enter the corresponding slits of the crystal. Then, remove the blade (separator) from the crystal's cutting slits, making sure to pull it out horizontally.

[0093] Change the crystal position to the fifth position A5, specifically lower the crystal position to the vicinity of the cutting wire mesh, ensuring that the lower edge of the crystal is 0.1-0.3mm higher than the position of the cutting wire mesh, that is, the cutting wire mesh is deeper into the cutting gap of the crystal. Remove the tape on the outside of the cutting wire mesh, that is, remove the second fixing element, grab the outermost wire end of the cutting wire mesh (that is, the end corresponding to the second position A2 in the cutting wire mesh) and then route the wire. The routing speed (second routing speed) is controlled

[0094] The speed is adjusted to 0.02m / s-0.04m / s. The extracted wire end is wrapped around the take-up sheave and secured to the other end of the cutting wire mesh. The wire travel speed is then adjusted to 0.4m / s-0.6m / s (the third travel speed). The wire continues to travel around the take-up sheave 200. The tape on the take-up sheave 200 is quickly tightened to stop the wire travel. The wire break is now resolved, and the cutting task can continue.

[0095] It should be noted that in the description of this application, it should be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a centrally located component.

[0096] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A disconnection processing method, characterized in that: The processing method is applied to a multi-wire cutting device for cutting crystals, the multi-wire cutting device comprising a wire feed side sheave and a wire take-up side sheave, a cutting wire net wound around the wire feed side sheave and the wire take-up side sheave, the cutting wire net comprising a plurality of cutting coils connected end to end in sequence; the processing method comprises: Acquiring a cutting depth of the crystal, where the cutting depth is the cutting depth of the crystal by the cutting wire mesh when the cutting wire mesh is broken; Based on the cutting depth, the position of the crystal is changed to a first position, the distance between the first position and the cut surface of the crystal is a first distance, the first distance is less than the cutting depth, and the cutting wire mesh is still located in the cutting gap of the crystal; wherein the cutting wire mesh starts at the cut surface of the crystal and cuts the crystal; Acquiring a second position, where the second position is a broken wire position of the cutting wire web and is an end of an untangled portion of the cutting wire web, where no broken wire exists; Based on the undisordered part of the cutting wire mesh, the cutting wire mesh is supplemented with wiring along the routing direction of the cutting wire mesh until a cutting coil is inserted into the cutting gap in the crystal where there is no cutting coil, and the second position is beyond the range of the crystal, thereby completing the supplementary wiring of the cutting wire mesh.

2. The disconnection processing method according to claim 1, wherein: The first distance has a value range of 0.8 mm to 1.2 mm, including the endpoint values.

3. The disconnection processing method according to claim 1, wherein: The second position is located between the wire feeding side sheave and the wire taking-up side sheave; or The second position is located on the take-up side sheave.

4. The disconnection processing method according to claim 1, wherein: Obtaining the cutting depth of the crystal includes: Acquiring a third position, where the third position is a position of the cutting wire mesh relative to the cutting surface of the crystal when the cutting wire mesh is broken; The cutting depth is acquired based on the third position, where the cutting depth is the distance between the third position and the cutting surface of the crystal.

5. The disconnection processing method according to claim 1, wherein: Obtaining the second position includes: Acquiring a fourth position, and after acquiring the fourth position, fixing the fourth position using a first fixing element, wherein the fourth position is located on the take-up side sheave; acquiring the second position based on the fourth position, and fixing the second position using a second fixing element; Among them, along the routing direction of the cutting wire net, the distance between the fourth position and the second position is smaller than the distance between the wire supply side sheave and the wire take-up side sheave, the fourth position and the second position are located in the same cutting coil, and the fourth position is located in the uncluttered part of the cutting wire net.

6. The disconnection processing method according to claim 5, characterized in that: Based on the cutting depth, changing the position of the crystal to a first position includes: After fixing the fourth position, changing the position of the crystal to the first position based on the cutting depth; After changing the position of the crystal to the first position, inserting a separator into a cutting gap in the crystal where no cutting coil is formed, so as to prevent the cutting gap of the crystal from being aligned, and withdrawing the separator after completing the compensation wiring of the cutting wire network; After the position of the crystal is changed to the first position, the second position is obtained.

7. The disconnection processing method according to claim 5, characterized in that: Fixing the second position using the second fixing element includes: Marking the second position with a second fixing element, and bonding the second position and N cutting coils adjacent to the second position, wherein the N cutting coils are located in an undisordered portion of the cutting wire web, and 3≤N≤6; Thereafter, the portion of the cutting wire web other than the undisturbed portion thereof is removed.

8. The disconnection processing method according to claim 1, wherein: On the basis of the undisordered portion of the cutting wire mesh, supplementary wiring of the cutting wire mesh is performed along the routing direction of the cutting wire mesh until a cutting gap in the crystal where no cutting coil is present has a cutting coil, and the second position is beyond the range where the crystal is located. Based on the untangled portion of the cutting wire mesh, the cutting wire mesh is supplementarily routed along the routing direction from the wire feeding side sheave to the wire taking-up side sheave at a first routing speed until a cutting coil is found in a cutting gap in the crystal where no cutting coil is found, and the second position is beyond the range where the crystal is located; The first routing speed has a value range of 0.01 m / s to 0.04 m / s, including endpoint values.

9. The disconnection processing method according to claim 8, characterized in that: Based on the undisordered portion of the cutting wire mesh, supplementary wiring of the cutting wire mesh is performed along the routing direction of the cutting wire mesh until a cutting coil is found in a cutting gap in the crystal where no cutting coil is found, and the second position is beyond the range of the crystal, further comprising: After the second position exceeds the area where the crystal is located, the position of the crystal is changed to a fifth position, the distance between the fifth position and the cutting surface of the crystal is a second distance, and the second distance is less than the cutting depth and greater than the first distance; Among them, the distance between the fifth position and the third position is the third distance, the value range of the third distance is 0.1mm~0.3mm, including the endpoint value, and the third position is the position of the cutting wire mesh relative to the cutting surface of the crystal when the cutting wire mesh is broken.

10. The disconnection processing method according to claim 8, characterized in that: Based on the undisordered portion of the cutting wire mesh, supplementary wiring of the cutting wire mesh is performed along the routing direction of the cutting wire mesh until a cutting coil is found in a cutting gap in the crystal where no cutting coil is found, and the second position is beyond the range of the crystal, further comprising: After the second position exceeds the area where the crystal is located, the wire mesh continues to be routed along the routing direction from the wire feeding side sheave to the wire taking-up side sheave at a second routing speed until the end of the cutting wire mesh at the second position is connected to the other end of the cutting wire mesh and fixed to each other; Continue routing the wire at a third routing speed along the routing direction from the wire feeding side sheave to the wire taking-up side sheave until at least a portion of the area where the end portion of the cutting wire web at the second position meets the other end portion of the cutting wire web is covered by the wire; The second routing speed has a value range of 0.02 m / s to 0.04 m / s, including the endpoint values, and the third routing speed has a value range of 0.4 m / s to 0.6 m / s, including the endpoint values.

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