Ultrathin alloy resistor and preparation method thereof

Abstract

The invention discloses a preparation method of an ultrathin alloy resistor. The preparation method comprises the following steps: attaching two opposite surfaces of an alloy sheet to a dry film; exposing and developing one surface of the alloy sheet attached with the dry film so as to form a first circuit pattern with a set shape on the corresponding dry film; the area, corresponding to the electrode, of the alloy sheet is exposed; directly carrying out electrode metal electroplating on the exposed electrode area; and removing the dry film on the surface of the alloy sheet to obtain the ultrathin alloy resistor. According to the preparation method of the ultrathin alloy resistor, the technological process is more simplified, the cost is saved, the production efficiency is higher, copper electroplating and solder mask are not needed, and the prepared ultrathin alloy resistor is thin in thickness and stable in product quality.

Description

Technical Field

[0001] The present invention belongs to the technical field of alloy resistors, and in particular relates to a method for preparing an ultra-thin alloy resistor with an overall thickness of 0.10 to 0.15 mm and an ultra-thin alloy resistor prepared by the preparation method. Background Art

[0002] In the prior art, alloy resistors are generally made by pressing an alloy sheet onto a substrate, then etching to obtain a semi-finished resistor body with a certain resistance value. Subsequently, single products are obtained through solder masking, copper electroplating, cutting and granulation, and roller plating.

[0003] Since the existing method requires a substrate as a carrier and requires solder resistance, the electrode thickness is thick and the overall thickness of the alloy resistor is also thick, and an ultra-thin effect cannot be achieved.

[0004] The disclosure of the above background technology content is only used to assist in understanding the inventive concept and technical solution of the present invention. It does not necessarily belong to the prior art of the present invention. In the absence of clear evidence showing that the above content has been disclosed before the application date of the present invention, the above background technology should not be used to evaluate the novelty and creativity of the present invention. Summary of the Invention

[0005] In view of this, in order to overcome the defects of the prior art, the purpose of the present invention is to provide a method for preparing an ultra-thin alloy resistor, which does not require copper electroplating and solder mask and has a thinner thickness.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] A method for preparing an ultra-thin alloy resistor comprises the following steps:

[0008] Laminating the two opposite surfaces of the alloy sheet with the dry film;

[0009] Exposing and developing one side of the alloy sheet with the dry film attached thereto to form a first circuit pattern of a predetermined shape on the corresponding dry film; and exposing the area of ​​the alloy sheet corresponding to the electrode;

[0010] Electrode metal plating is performed directly on the exposed electrode area;

[0011] The dry film on the surface of the alloy sheet is removed to obtain the ultra-thin alloy resistor.

[0012] According to some preferred embodiments of the present invention, the electrode metal electroplating is sequentially performing nickel plating on the electrode to form a nickel layer, palladium plating on the electrode to form a palladium layer, and gold plating on the electrode to form a gold layer.

[0013] According to some preferred embodiments of the present invention, the nickel layer covers the surface of the electrode region, the palladium layer covers the surface and side surfaces of the nickel layer, and the gold layer covers the surface and side surfaces of the palladium layer.

[0014] According to some preferred embodiments of the present invention, the thickness of the nickel layer is 5-7 μm; the thickness of the palladium layer is 0.05-0.1 μm; the thickness of the gold layer is 0.05-0.1 μm. The overall thickness of the electrode is 5-7.5 μm.

[0015] According to some preferred embodiments of the present invention, the step includes pre-treating the alloy sheet before laminating the alloy sheet with the dry film to remove oxides and oil stains on the surface of the alloy sheet.

[0016] According to some preferred embodiments of the present invention, the pretreatment is: pre-treating the alloy sheet with a micro-etching solution to remove surface oil and oxides, with a micro-etching speed of 1 to 3 m / min and a micro-etching temperature of 45±5°C.

[0017] According to some preferred embodiments of the present invention, the step includes a particle separation step after removing the dry film, and the particle separation is performed by chemical etching or laser.

[0018] According to some preferred embodiments of the present invention, the etching speed of the chemical etching is 1 to 3 m / min; the etching temperature is 45±5°C; the parameters of the laser etchant are a laser power of 150-250 W; and a laser speed of 250 to 300 mm / s.

[0019] According to some preferred implementation aspects of the present invention, the thickness of the alloy sheet is 0.10-0.15 mm; the thickness of the ultra-thin alloy resistor is 0.10-0.15 mm.

[0020] The present invention also provides an ultra-thin alloy resistor prepared according to the above-mentioned preparation method, comprising an alloy and an electrode located on the alloy; the alloy has a circuit area (corresponding to a first circuit pattern) and an electrode area, the circuit area being rectangular and located between the electrode areas. The electrode is located on the electrode area, and the width of the circuit area is the same as the spacing between the electrodes. Preferably, the electrode comprises a nickel layer, a palladium layer, and a gold layer in sequence, the nickel layer covering the surface of the electrode area, the palladium layer covering the surface and sides of the nickel layer, and the gold layer covering the surface and sides of the palladium layer, which can subsequently be used for gold wire punching operations.

[0021] Due to the adoption of the above technical solution, compared with the prior art, the benefits of the present invention are: the preparation method of the ultra-thin alloy resistor of the present invention has a simpler process flow, saves costs, has higher production efficiency, does not require copper electroplating and solder masking, and the prepared ultra-thin alloy resistor is thin and has stable product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 This is a schematic diagram of the preparation process of alloy resistors in the prior art;

[0024] Figure 2 Schematic diagram of the cross-sectional structure of an alloy resistor in the prior art;

[0025] Figure 3 Schematic diagram of the preparation process of the ultra-thin alloy resistor in an embodiment of the present invention;

[0026] Figure 4 Schematic diagram of the cross-sectional structure of an ultra-thin alloy resistor according to an embodiment of the present invention;

[0027] In the accompanying drawings, substrate-1, alloy-2, first solder mask-3, second solder mask-4, copper layer-5, nickel layer-6, tin layer-7, palladium layer-8, gold layer-9. DETAILED DESCRIPTION

[0028] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0029] like Figure 1-2 As shown, in the alloy resistor of the prior art, the substrate 1 and the alloy 2 are pressed together, and the substrate 1 is needed for support, and then the line electrode is made, and finally a single finished product is made. Figure 1 As shown: Alloy 2 + base material 1 are pressed together → first solder mask → electrode copper plating → second solder mask → nickel plating → tin plating. The product structure is as follows Figure 2As shown, the electrode copper layer 5, alloy 2, and substrate 1 are arranged in sequence, with a first solder mask 3 and a second solder mask 4 positioned between the electrodes. The second solder mask 4 is positioned above the first solder mask 3, and a nickel layer 6 and a tin layer 7 overly the electrode copper layer 5. Existing alloy resistors have irregular circuits, and the pattern of the alloy 2 in the functional area is smaller than the size of the electrodes, requiring substrate 1 for backside support. Otherwise, the product's strength is easily deformed. The ultra-thin alloy resistor product of the present invention is rectangular, with the circuitry in the functional area of ​​the product being the same width as the electrodes, optimizing the process flow and reducing the product thickness.

[0030] Specifically, the ultra-thin alloy resistor of the present invention includes an alloy 2 and an electrode located on the alloy 2; the alloy 2 has a circuit area (corresponding to the first circuit pattern of the dry film) and an electrode area, the circuit area being rectangular and located between the electrode areas. The electrode is located on the electrode area, and the width of the circuit area is the same as the spacing between the electrodes. The electrode includes a nickel layer 6, and / or a palladium layer 8, and / or a gold layer 9. Preferably, the electrode includes a nickel layer 6, a palladium layer 8, and a gold layer 9 in this order, with the nickel layer 6 covering the surface of the electrode area, the palladium layer 8 covering the surface and sides of the nickel layer 6, and the gold layer 9 covering the surface and sides of the palladium layer 8.

[0031] The thickness of the electrode is 5 to 7.5 μm, preferably the thickness of the nickel layer 6 is 5 to 7 μm; the thickness of the palladium layer 8 is 0.05 to 0.1 μm; the thickness of the gold layer 9 is 0.05 to 0.1 μm; the thickness of the alloy 2 is 0.1-0.15 mm; the thickness of the ultra-thin alloy resistor is 0.10-0.15 mm; and the resistance of the ultra-thin alloy resistor is 1 to 5 mΩ.

[0032] The method for preparing the ultra-thin alloy resistor of the above structure of the present invention comprises the following steps:

[0033] Laminating the two opposite surfaces of the alloy sheet with the dry film;

[0034] Exposing and developing one side of the alloy sheet with the dry film attached thereto to form a first circuit pattern of a predetermined shape on the corresponding dry film; and exposing the area of ​​the alloy sheet corresponding to the electrode;

[0035] Electrode metal plating is performed directly on the exposed electrode area;

[0036] The dry film on the surface of the alloy sheet is removed to obtain an ultra-thin alloy resistor.

[0037] The electrode metal electroplating is performed in sequence by plating the electrode with nickel to form a nickel layer 6 , plating the electrode with palladium to form a palladium layer 8 , and plating the electrode with gold to form a gold layer 9 .

[0038] Preferably, the step includes pre-treating the alloy sheet before laminating the alloy sheet with the dry film to remove oxides and oil stains on the surface of the alloy sheet.

[0039] The pretreatment is as follows: the alloy sheet is pre-treated with a micro-etching solution to remove surface oil and oxides, the micro-etching speed is 1 to 3 m / min, and the micro-etching temperature is 45±5°C.

[0040] Preferably, the step includes a particle size separation step after removing the dry film, and the particle size separation is performed by chemical etching or laser etching. Chemical etching parameters are: etching speed: 1-3 m / min; etching temperature: 45±5°C. Laser etching parameters are: laser power: 150-250 W; laser speed: 250-300 mm / s.

[0041] In some embodiments, the method for preparing the ultra-thin alloy resistor specifically includes the following steps:

[0042] Step S1: Pretreatment of alloy sheet

[0043] Before applying the dry film, the surface of the alloy sheet is pre-treated to remove oxides and oil stains on the surface of the alloy sheet, which is conducive to the full adhesion of the subsequent dry film and the alloy sheet. The thickness of the alloy sheet is 0.1-0.15mm.

[0044] The pretreatment is specifically as follows: the alloy sheet is pre-treated with a micro-etching solution to remove surface oil and oxides, with a micro-etching speed of 1 to 3 m / min and a micro-etching temperature of 45±5°C.

[0045] The micro-etching solution is a mixture of sulfuric acid and hydrogen peroxide. The concentration of sulfuric acid in the mixture is 5%±1%; the concentration of hydrogen peroxide is 5%±1%.

[0046] Step S2: Apply dry film

[0047] Use a laminator to fully press the upper and lower surfaces of the alloy sheet with the dry film.

[0048] Pressing time: 55-65s, pressing pressure: 40-50KG, pressing temperature: 130-150℃.

[0049] Step S3: Exposure and Development

[0050] One of the upper and lower surfaces of the alloy sheet with the dry film is exposed and then developed to obtain a first circuit pattern of a predetermined shape on the dry film on one side of the alloy sheet and expose the area corresponding to the electrode on the alloy sheet.

[0051] Step S4: Electrode metal plating

[0052] Electrode metal plating is directly performed on the exposed electrode areas: nickel plating is performed sequentially to form a nickel layer 6, palladium plating is performed to form a palladium layer 8, and gold plating is performed to form a gold layer 9. The resulting nickel layer 6 has a thickness of 5 to 7 μm; the palladium layer 8 has a thickness of 0.05 to 0.1 μm; and the gold layer 9 has a thickness of 0.05 to 0.1 μm.

[0053] Step S5: Stripping the film

[0054] The alloy sheet after electroplating is subjected to a film stripping treatment to remove the dry film on the surface of the alloy sheet to obtain a semi-finished plate.

[0055] Film stripping speed: 1~2m / min; film stripping temperature: 45±5℃.

[0056] Step S6: Grain classification

[0057] The semi-finished plate is cut into particles to obtain single alloy resistor products.

[0058] Grain separation is done by chemical etching or laser.

[0059] Chemical etching uses an acidic etching solution with an etching speed of 1 to 3 m / min and an etching temperature of 45 ± 5 ° C. The acidic etching solution is a mixture of copper chloride and hydrochloric acid, with the concentration of copper chloride in the mixture being 90 to 95% and the concentration of hydrochloric acid being 5 to 10%.

[0060] The parameters of the laser are laser power 150-250W; laser speed 250-300mm / s.

[0061] Example 1

[0062] like Figure 3-4 As shown, the ultra-thin alloy resistor in this embodiment consists solely of alloy 2 and electrodes positioned on alloy 2. The electrodes sequentially comprise a nickel layer 6, a palladium layer 8, and a gold layer 9. The nickel layer 6 covers the surface of the electrode area, the palladium layer 8 covers the surface and sides of the nickel layer 6, and the gold layer 9 covers the surface and sides of the palladium layer 8. The thickness of the electrodes ranges from 5 to 7.5 μm; specifically, the nickel layer 6 has a thickness of 5 to 7 μm; the palladium layer 8 has a thickness of 0.05 to 0.1 μm; and the gold layer 9 has a thickness of 0.05 to 0.1 μm.

[0063] Alloy 2 has a circuit area (corresponding to the first circuit pattern of the dry film) and an electrode area. The circuit area is rectangular and located between the electrode areas. The electrodes are located on the electrode areas, and the width of the circuit area is the same as the spacing between the electrodes.

[0064] The thickness of alloy 2 is 0.1-0.15 mm; the thickness of the ultra-thin alloy resistor is 0.10-0.15 mm; and the resistance value of the ultra-thin alloy resistor is 1-5 mΩ.

[0065] Example 2

[0066] The method for preparing the ultra-thin alloy resistor of this embodiment specifically includes the following steps:

[0067] Step S1: Pretreatment of alloy sheet

[0068] The surface of the alloy sheet is pretreated before the dry film is applied to remove oxides and oil stains on the surface of the alloy sheet, which is conducive to the full adhesion of the subsequent dry film and the alloy sheet.

[0069] The pretreatment is as follows: the alloy sheet is pre-treated with a micro-etching solution to remove surface oil and oxides, with a micro-etching speed of 2 m / min and a micro-etching temperature of 45°C.

[0070] The micro-etching solution is a mixture of sulfuric acid and hydrogen peroxide, wherein the concentration of sulfuric acid in the mixture is 5%; the concentration of hydrogen peroxide is 5%.

[0071] Step S2: Apply dry film

[0072] Use a laminator to fully press the upper and lower surfaces of the alloy sheet with the dry film.

[0073] Pressing time: 60s, pressing pressure: 45KG, pressing temperature: 140℃.

[0074] Step S3: Exposure and Development

[0075] One of the upper and lower surfaces of the alloy sheet with the dry film is exposed and then developed to obtain a first circuit pattern of a predetermined shape on the dry film on one side of the alloy sheet and expose the area corresponding to the electrode on the alloy sheet.

[0076] Step S4: Electrode metal plating

[0077] Electrode metal electroplating is directly performed on the exposed electrode area: nickel plating is performed in sequence to form a nickel layer 6 , palladium plating is performed to form a palladium layer 8 , and gold plating is performed to form a gold layer 9 .

[0078] Step S5: Stripping the film

[0079] The alloy sheet after electroplating is subjected to a film stripping treatment to remove the dry film on the surface of the alloy sheet to obtain a semi-finished plate.

[0080] Film stripping speed: 1.5m / min; film stripping temperature: 45℃.

[0081] Step S6: Grain classification

[0082] The semi-finished plate is cut into particles to obtain single alloy resistor products.

[0083] Example 3

[0084] The method for preparing the ultra-thin alloy resistor of this embodiment specifically includes the following steps:

[0085] Step S1: Pretreatment of alloy sheet

[0086] The surface of the alloy sheet is pretreated before the dry film is applied to remove oxides and oil stains on the surface of the alloy sheet, which is conducive to the full adhesion of the subsequent dry film and the alloy sheet.

[0087] The pretreatment is as follows: the alloy sheet is pre-treated with a micro-etching solution to remove surface oil and oxides, with a micro-etching speed of 3 m / min and a micro-etching temperature of 50°C.

[0088] The micro-etching solution is a mixture of sulfuric acid and hydrogen peroxide, wherein the concentration of sulfuric acid in the mixture is 6%; the concentration of hydrogen peroxide is 6%.

[0089] Step S2: Apply dry film

[0090] Use a laminator to fully press the upper and lower surfaces of the alloy sheet with the dry film.

[0091] Pressing time: 65s, pressing pressure: 40KG, pressing temperature: 130℃.

[0092] Step S3: Exposure and Development

[0093] One of the upper and lower surfaces of the alloy sheet with the dry film is exposed and then developed to obtain a first circuit pattern of a predetermined shape on the dry film on one side of the alloy sheet and expose the area corresponding to the electrode on the alloy sheet.

[0094] Step S4: Electrode metal plating

[0095] Electrode metal electroplating is directly performed on the exposed electrode area: nickel plating is performed in sequence to form a nickel layer 6 , palladium plating is performed to form a palladium layer 8 , and gold plating is performed to form a gold layer 9 .

[0096] Step S5: Stripping the film

[0097] The alloy sheet after electroplating is subjected to a film stripping treatment to remove the dry film on the surface of the alloy sheet to obtain a semi-finished plate.

[0098] Film stripping speed: 1m / min; film stripping temperature: 40℃.

[0099] Step S6: Grain classification

[0100] The semi-finished plate is cut into particles to obtain single alloy resistor products.

[0101] Example 4

[0102] The method for preparing the ultra-thin alloy resistor of this embodiment specifically includes the following steps:

[0103] Step S1: Pretreatment of alloy sheet

[0104] The surface of the alloy sheet is pretreated before the dry film is applied to remove oxides and oil stains on the surface of the alloy sheet, which is conducive to the full adhesion of the subsequent dry film and the alloy sheet.

[0105] The pretreatment is as follows: the alloy sheet is pre-treated with a micro-etching solution to remove surface oil and oxides, with a micro-etching speed of 1 m / min and a micro-etching temperature of 40°C.

[0106] The micro-etching solution is a mixture of sulfuric acid and hydrogen peroxide, wherein the concentration of sulfuric acid in the mixture is 4%; the concentration of hydrogen peroxide is 4%.

[0107] Step S2: Apply dry film

[0108] Use a laminator to fully press the upper and lower surfaces of the alloy sheet with the dry film.

[0109] Pressing time: 55s, pressing pressure: 50KG, pressing temperature: 150℃.

[0110] Step S3: Exposure and Development

[0111] One of the upper and lower surfaces of the alloy sheet with the dry film is exposed and then developed to obtain a first circuit pattern of a predetermined shape on the dry film on one side of the alloy sheet and expose the area corresponding to the electrode on the alloy sheet.

[0112] Step S4: Electrode metal plating

[0113] Electrode metal electroplating is directly performed on the exposed electrode area: nickel plating is performed in sequence to form a nickel layer 6 , palladium plating is performed to form a palladium layer 8 , and gold plating is performed to form a gold layer 9 .

[0114] Step S5: Stripping the film

[0115] The alloy sheet after electroplating is subjected to a film stripping treatment to remove the dry film on the surface of the alloy sheet to obtain a semi-finished plate.

[0116] Film stripping speed: 2m / min; film stripping temperature: 50℃.

[0117] Step S6: Grain classification

[0118] The semi-finished plate is cut into particles to obtain single alloy resistor products.

[0119] The present invention directly performs nickel plating, palladium plating, and gold plating on the alloy at the electrode; subsequent cutting and granulation are performed to obtain a single product. Etching is not required, and laser cutting or other methods are used to directly achieve the product's resistance value, eliminating the need for lamination with the substrate. The product electrodes are directly made by electroplating, which can simplify most of the production processes, greatly improve production efficiency, and more importantly, significantly reduce the thickness of the product. Under the premise of ensuring that the product resistance value remains unchanged, the product thickness of the existing structure 1.5mr is 0.45mm, and the product thickness of the present invention can be reduced to less than 0.11mm. The main differences between the present invention and the prior art are:

[0120] 1. The current alloy resistor structure involves pressing a substrate and alloy together, requiring support from the substrate. Then, the circuits and electrodes are formed, ultimately creating a single finished resistor. Because the resulting circuits are irregular, the alloy pattern in the functional area is smaller than the electrode size, requiring a substrate for backside support. Otherwise, the product will lack strength and be prone to deformation. The ultra-thin alloy resistor product of this invention is rectangular, with the functional area circuits and electrodes sharing the same width, optimizing the process flow and reducing product thickness.

[0121] 2. The purpose of the primary solder mask of the alloy resistor structure in the prior art is to protect the alloy resistor body. In order to carry out the subsequent copper plating at the electrode, the resistor will be repaired after copper plating to bring the resistance value of the product into the set range. The purpose of the secondary solder mask is to cover the repairing edge with protective ink to prevent oxidation of the repairing edge. The ultra-thin alloy resistor product in the present invention adopts a one-step etching method, does not require a repairing process to correct the product resistance value, and does not require solder mask.

[0122] 3. The ultra-thin alloy resistor product of the present invention can be used in conditions of gold wire punching operation, with nickel-palladium-gold plated electrodes.

[0123] The above-described embodiments, prepared by the methods of the present invention, are intended only to illustrate the technical concepts and features of the present invention. Their purpose is to enable those skilled in the art to understand the present invention and implement it accordingly. They are not intended to limit the scope of protection of the present invention. Any equivalent variations or modifications made in accordance with the spirit and substance of the present invention are intended to be encompassed within the scope of protection of the present invention.

[0124] The endpoints of the ranges and any values ​​disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered to be specifically disclosed herein.

Claims

1. A method for preparing an ultra-thin alloy resistor, characterized in that: The steps include: Laminating the two opposite surfaces of the alloy sheet with the dry film; Exposing and developing one side of the alloy sheet on which the dry film is attached, so as to form a first circuit pattern of a predetermined shape on the corresponding dry film; and exposing the area corresponding to the electrode on the alloy sheet; Electrode metal plating is performed directly on the exposed electrode area; The dry film on the surface of the alloy sheet is removed to obtain the ultra-thin alloy resistor.

2. The preparation method according to claim 1, characterized in that The electrode metal electroplating is nickel plating on the electrode to form a nickel layer, and / or palladium plating on the electrode to form a palladium layer, and / or gold plating on the electrode to form a gold layer.

3. The preparation method according to claim 2, characterized in that The nickel layer covers the surface of the electrode region, the palladium layer covers the surface and side surfaces of the nickel layer, and the gold layer covers the surface and side surfaces of the palladium layer.

4. The preparation method according to claim 2, characterized in that The thickness of the nickel layer is 5 to 7 μm; the thickness of the palladium layer is 0.05 to 0.1 μm; and the thickness of the gold layer is 0.05 to 0.1 μm.

5. The preparation method according to claim 1, characterized in that The step includes pre-treating the alloy sheet before laminating the alloy sheet with the dry film to remove oxides and oil stains on the surface of the alloy sheet.

6. The preparation method according to claim 5, characterized in that The pretreatment is as follows: pre-treating the alloy sheet with a micro-etching solution to remove surface oil stains and oxides, with a micro-etching speed of 1 to 3 m / min and a micro-etching temperature of 45±5°C.

7. The preparation method according to claim 1, characterized in that The steps include a particle separation step after removing the dry film, and the particle separation is performed by chemical etching or laser.

8. The preparation method according to claim 7, characterized in that The chemical etching has an etching speed of 1 to 3 m / min and an etching temperature of 45 ± 5 °C.

9. The preparation method according to claim 7, characterized in that The parameters of the laser are: laser power 150-250W; laser speed 250-300mm / s.

10. The preparation method according to any one of claims 1 to 9, characterized in that: The thickness of the alloy sheet is 0.10-0.15 mm; the thickness of the ultra-thin alloy resistor is 0.10-0.15 mm.

11. An ultra-thin alloy resistor prepared according to the preparation method according to any one of claims 1 to 10.

12. The ultra-thin alloy resistor according to claim 11, characterized in that: The invention comprises an alloy and electrodes on the alloy; the alloy is provided with a circuit area and an electrode area, the electrodes are located on the electrode area, and the width of the circuit area is the same as the distance between the electrodes.

13. The ultra-thin alloy resistor according to claim 12, characterized in that: The circuit area is rectangular and is located between the electrode areas.

14. The ultra-thin alloy resistor according to claim 11, characterized in that: The ultra-thin alloy resistor is composed only of the alloy and electrodes.

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