A transistor driving system with adaptive variable resistance

Abstract

The application relates to the field of transistor driving technology, in particular to a transistor driving system with self-adaptive variable resistance, which comprises a data acquisition module, a driving analysis module used for determining whether gate resistance driving is needed for a current on process according to an abnormal reference value, and when the gate resistance driving is needed for the current on process, driving the gate resistance in stages or as a whole according to Miller platform time and a change rate fluctuation value, a stage division module used for determining whether each stage is divided twice according to corresponding stage comparison values of the stages, a stage driving module used for determining gate resistance adjustment for a characteristic pre-adjustment stage or all pre-adjustment stages according to a pre-adjustment stage number, and adjusting the gate resistance according to paragraph change abnormality, and a whole driving module used for adjusting the gate resistance according to on stage characteristic values. The application can reduce the on loss of the transistor.

Description

Technical Field

[0001] The present invention relates to the technical field of transistor driving, and in particular to a transistor driving system with adaptive variable resistance. Background Art

[0002] The driving performance of transistors directly determines the efficiency, reliability, and electromagnetic compatibility of power electronics systems. Gate resistance, a core parameter of the drive circuit, significantly affects transistor characteristics such as switching speed, switching losses, and voltage oscillations. However, the rapid switching process of transistors produces extremely large current and voltage change rates, resulting in ringing and overshoot during the turn-on transient, significantly increasing the risk of device damage. Therefore, how to adaptively adjust the gate resistance based on the real-time state of the transistor to improve the safety and stability of transistor operation is an urgent problem to be solved by those skilled in the art.

[0003] Chinese Patent Publication No. CN117914302A discloses a transistor drive circuit and transistor drive method, comprising: a driving force limiting circuit that maintains the gate potential of the driven transistor at a specified driving force limiting potential corresponding to the threshold voltage of the driven transistor when the driven transistor is driven; and a delay time adjustment circuit that causes the gate potential to transition to the driving force limiting potential when the driving force limiting circuit is activated. However, the above solution has the following problems: maintaining a fixed gate potential during the driving force limiting period makes it impossible to adaptively adjust the gate resistance according to the actual state of the turn-on process at different stages, resulting in higher conduction losses in the transistor, and thus poor safety and stability of the transistor operation. Summary of the Invention

[0004] To this end, the present invention provides a transistor drive system with adaptive variable resistance to overcome the problem in the prior art that the gate resistance cannot be adaptively adjusted according to the actual state of the different stages of the turn-on process, resulting in high conduction loss of the transistor and further resulting in poor safety and stability of the transistor operation.

[0005] To achieve the above object, the present invention provides a transistor driving system with adaptive variable resistance, comprising:

[0006] Data acquisition module, used to collect transistor data;

[0007] a drive analysis module connected to the data acquisition module, configured to determine whether gate resistance driving is required for the current turn-on process based on the abnormal reference value, and, when gate resistance driving is required for the current turn-on process, to perform phased driving or overall driving of the gate resistance based on the Miller platform time and the change rate fluctuation value;

[0008] a stage division module, connected to the data acquisition module and the drive analysis module respectively, for determining whether to perform secondary division for each stage according to the stage comparison value corresponding to each stage during the staged drive, and when performing secondary division, performing associated division according to the gate voltage change value to obtain a plurality of associated intervals;

[0009] a stage driving module connected to the stage analyzing module, configured to determine, based on the number of pre-adjustment segments, whether to adjust the gate resistance for a characteristic pre-adjustment segment or for all pre-adjustment segments, and to adjust the gate resistance based on the degree of abnormality of segment changes;

[0010] The overall driving module is connected to the driving analysis module and is used to adjust the gate resistance according to the turn-on phase characterization value during the overall driving.

[0011] Furthermore, the driving analysis module performs gate resistance driving for the current turn-on process when the abnormal reference value is greater than or equal to a preset abnormal reference value;

[0012] Wherein, the abnormal reference value is determined according to the abnormality of the rate of change of the target opening process;

[0013] If the change rate abnormality is greater than or equal to the preset change rate abnormality, determining an abnormal reference value according to the change rate abnormality;

[0014] If the change rate abnormality is less than the preset change rate abnormality, an abnormal reference value is determined according to the change rate abnormality comparison value.

[0015] Furthermore, in response to the Miller plateau time being less than a preset Miller plateau time and the stage current difference being less than a preset stage current difference, the driving analysis module performs staged driving for the gate resistance.

[0016] Furthermore, the stage division module determines whether to perform secondary division for each stage according to the stage comparison value corresponding to each stage, including:

[0017] For a single stage,

[0018] If the stage comparison value corresponding to the stage is greater than or equal to the preset stage comparison value, the stage is divided into two parts;

[0019] If the stage comparison value corresponding to the stage is less than the preset stage comparison value, there is no need to perform secondary division for the stage.

[0020] Furthermore, the stage division module performs associated division according to the gate voltage change value, including:

[0021] For a single stage,

[0022] If the gate voltage change value is greater than or equal to the preset gate voltage change value, then the associated division is performed according to the gate voltage floating value;

[0023] If the gate voltage change value is less than the preset gate voltage change value, correlation division is performed according to the junction temperature change rate.

[0024] Furthermore, the stage driving module performs gate resistance adjustment for the characteristic pre-adjustment segment in response to the number of pre-adjustment segments being greater than or equal to the preset number of pre-adjustment segments;

[0025] The characteristic pre-adjustment section is a pre-adjustment section in which the change threshold is greater than the preset change threshold, and the pre-adjustment section includes each associated interval in each stage that is secondary divided and each stage that is not secondary divided.

[0026] Furthermore, the stage driving module adjusts the gate resistance for all pre-adjustment segments in response to the number of pre-adjustment segments being less than a preset number of pre-adjustment segments.

[0027] Furthermore, the stage driving module increases and adjusts the gate resistance according to the abnormality of the segment change;

[0028] The increase value of the gate resistance corresponding to a single pre-adjustment section is positively correlated with the abnormality degree of the section change corresponding to the pre-adjustment section.

[0029] Furthermore, the driving analysis module performs overall driving on the gate resistor in response to the Miller plateau time being greater than or equal to the preset Miller plateau time or the stage current difference being greater than or equal to the preset stage current difference.

[0030] Furthermore, the overall driving module increases and adjusts the gate resistance according to the characteristic value of the turn-on phase;

[0031] The increase in the gate resistance is positively correlated with the turn-on phase characterization value.

[0032] Compared with the prior art, the beneficial effect of the present invention lies in that, in the technical solution of the present invention, the abnormal degree of change of the drain-source current and drain-source voltage of the target turn-on process is effectively reflected by the abnormal degree of change of the rate of change of the target turn-on process, and then the abnormal reference value is adaptively determined according to the abnormal degree of change of the rate of change or the abnormal degree of change comparison value, so that the determination of the abnormal reference value is more in line with the actual application scenario, and then whether the gate resistance drive is required for the current turn-on process is determined according to the abnormal reference value, which is beneficial to reducing the conduction loss of the transistor and improving the safety and stability of the transistor operation.

[0033] Further, the Miller platform time and the change rate fluctuation value in the application effectively reflect the opening loss degree and the stability of the current change rate in each stage, and then the gate resistance is adaptively driven in stages or as a whole according to the Miller platform time and the change rate fluctuation value, so that the gate resistance adjustment is more in line with the actual application scene, avoiding the limitations of the traditional fixed parameter scheme in complex scenes, and being conducive to reducing the opening loss of the transistor.

[0034] Further, the stage comparison value in the application effectively reflects the deviation degree of the stage and the overall average level, and then it is determined whether to perform secondary division according to the stage comparison value. When the stage comparison value is large, it means that the current characteristics of the stage are significantly different from those of other stages, and at this time, secondary division is performed, which can more finely adjust the gate resistance. The resistance adjustment after fine division can accurately suppress abnormal current change rate to reduce loss.

[0035] Further, the gate voltage change value in the application effectively reflects the degree of change of the gate voltage, and then it is adaptively associated and divided according to the gate voltage change or the junction temperature change rate according to the gate voltage change value, and then the associated division mode of the actual scene is adapted, so that the switching characteristics in each associated interval are highly consistent, which is conducive to realizing fine adjustment of the gate resistance. BRIEF DESCRIPTION OF DRAWINGS

[0036] Fig. 1 The module connection diagram of the adaptive variable resistance transistor driving system of the application;

[0037] Fig. 2 The flowchart for determining whether the gate resistance driving is needed for the current opening process according to the abnormal reference value of the application;

[0038] Fig. 3 The flowchart for driving the gate resistance in stages or as a whole according to the Miller platform time and the change rate fluctuation value of the application;

[0039] Fig. 4 The flowchart for determining whether the gate resistance adjustment is needed for the characteristic pre-adjustment segment or all pre-adjustment segments according to the number of pre-adjustment segments of the application. DETAILED DESCRIPTION

[0040] In order to make the purpose and advantages of the application more clear and explicit, the application will be further described below in combination with embodiments; it should be understood that the specific embodiments described herein are only used to explain the application, and do not limit the application.

[0041] The preferred embodiments of the application will be described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the application, and are not intended to limit the protection scope of the application.

[0042] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside", and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. This is only for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0043] See also Figs. 1 to 4 As shown, the present invention provides a transistor driving system with adaptive variable resistance, comprising:

[0044] Data acquisition module, used to collect transistor data;

[0045] a drive analysis module connected to the data acquisition module, configured to determine whether gate resistance driving is required for the current turn-on process based on the abnormal reference value, and, when gate resistance driving is required for the current turn-on process, to perform phased driving or overall driving of the gate resistance based on the Miller platform time and the change rate fluctuation value;

[0046] a stage division module, connected to the data acquisition module and the drive analysis module respectively, for determining whether to perform secondary division for each stage according to the stage comparison value corresponding to each stage during the staged drive, and when performing secondary division, performing associated division according to the gate voltage change value to obtain a plurality of associated intervals;

[0047] a stage driving module connected to the stage analyzing module, configured to determine, based on the number of pre-adjustment segments, whether to adjust the gate resistance for a characteristic pre-adjustment segment or for all pre-adjustment segments, and to adjust the gate resistance based on the degree of abnormality of segment changes;

[0048] The overall driving module is connected to the driving analysis module and is used to adjust the gate resistance according to the turn-on phase characterization value during the overall driving.

[0049] The application scenario of the present invention is the adjustment of the gate resistance during the turn-on process of a transistor. The turn-on process of a transistor refers to the dynamic process of its transition from the off state to the on state. The target transistor is the transistor that needs to be driven at present. The target turn-on process is a turn-on process that is adjacent to the current turn-on process and earlier than the current turn-on process. The reference turn-on process is a turn-on process that is earlier than the target turn-on process and adjacent to the target turn-on process.

[0050] The transistor data includes a target turn-on process of the target transistor, monitoring data corresponding to a reference turn-on process, and several stage annotation data of the target transistor;

[0051] The monitoring data includes various electrical parameters monitored in real time over time during a single turn-on process of the target transistor. The electrical parameters include gate voltage, drain-source current, and drain-source voltage. The gate voltage is measured using a differential probe measurement method, the drain-source current is measured using a Hall effect current sensor, and the drain-source voltage is measured using a high-voltage differential probe. This is easy for those skilled in the art to understand and will not be described in detail.

[0052] The single stage annotation data is the start time and end time of the four stages corresponding to a single turn-on process of the target transistor. In order from early to late, the stages include: turn-on delay stage, current rise stage, voltage drop stage and gate recharge stage. The start time of a single stage of a single turn-on process is the duration from the start time of the stage to the start time of the turn-on process, and the end time of a single stage of a single turn-on process is the duration from the end time of the stage to the start time of the turn-on process.

[0053] The time range corresponding to a single stage of the current opening process, the target opening process, and the reference opening process is [the average value of the start time of each annotated monitoring data corresponding to the stage, and the average value of the end time of each annotated monitoring data corresponding to the stage];

[0054] The present invention is provided with several historical records, and any historical record records the abnormal reference value, current change rate abnormality, voltage change rate abnormality, current change rate fluctuation value and change rate abnormality comparison value of at least one historical process of adjusting the gate resistance during transistor driving, and each historical record corresponds to a qualified mark, which records whether the process of adjusting the gate resistance during transistor driving meets user requirements. The qualified mark can be recorded manually. It can be understood that the user can determine whether the process of adjusting the gate resistance during transistor driving meets the requirements based on self-set indicators. The self-set indicators can be but not limited to the number of errors, which will not be elaborated here. The number of errors is the number of times the drain-source voltage change rate exceeds 50V / ns during the gate resistance adjustment process.

[0055] Specifically, the driving analysis module performs gate resistance driving for the current turn-on process when the abnormal reference value is greater than or equal to the preset abnormal reference value;

[0056] Wherein, the abnormal reference value is determined according to the abnormality of the rate of change of the target opening process;

[0057] If the change rate abnormality is greater than or equal to the preset change rate abnormality, determining an abnormal reference value according to the change rate abnormality;

[0058] If the change rate abnormality is less than the preset change rate abnormality, an abnormal reference value is determined according to the change rate abnormality comparison value.

[0059] If the abnormal reference value is less than the preset abnormal reference value, there is no need to perform gate resistance driving for the current turn-on process;

[0060] The value of the preset abnormal reference value can be determined by the user according to the actual application scenario. The greater the user's demand for precision in reducing transistor loss, the smaller the value of the preset abnormal reference value. A method for determining the value of the preset abnormal reference value is provided. The method detects the user's historical records of gate resistance driving for the current turn-on process, and records the average value of the abnormal reference values ​​corresponding to the historical records that can meet the user's requirements as the preset abnormal reference value.

[0061] A time point setting method is provided, which takes the start time of a single opening process as the starting point, sets an interval point every 1ns in chronological order until the opening process ends, and records the starting point and each interval point as a time point;

[0062] Change rate abnormality = current change rate abnormality / preset current change rate abnormality + voltage change rate abnormality / preset voltage change rate abnormality;

[0063] The values ​​of the preset current change rate abnormality and the preset voltage change rate abnormality can be determined by the user according to the actual application scenario. The greater the user's demand for improving the accuracy of the change rate abnormality determination, the smaller the values ​​of the preset current change rate abnormality and the preset voltage change rate abnormality. A method for determining the values ​​of the preset current change rate abnormality and the preset voltage change rate abnormality is provided. The average value of the current change rate abnormality and the average value of the voltage change rate abnormality corresponding to each historical record that can meet the user's needs and does not require adjustment of the gate resistance are detected and recorded as the preset current change rate abnormality and the preset voltage change rate abnormality, respectively.

[0064] Current change rate abnormality = |current change rate fluctuation value - preset current change rate fluctuation value|, voltage change rate abnormality = |voltage change rate fluctuation value - preset voltage change rate fluctuation value|, where the current change rate fluctuation value is the standard deviation of the current change rate corresponding to each time point during the target activation process, and the voltage change rate fluctuation value is the standard deviation of the voltage change rate corresponding to each time point during the target activation process;

[0065] The preset current change rate fluctuation value is the average value of the current change rate fluctuation values ​​corresponding to the historical records that can meet user needs and do not require gate resistor driving, and the preset voltage change rate fluctuation value is the average value of the voltage change rate fluctuation values ​​corresponding to the historical records that can meet user needs and do not require gate resistor driving;

[0066] Draw a time-drain-source current image and a time-drain-source voltage image of the target turn-on process. The time-drain-source current image uses time as the horizontal axis and the drain-source current as the vertical axis. The time-drain-source voltage image uses time as the horizontal axis and the drain-source voltage as the vertical axis. The voltage change rate corresponding to a single time point is the slope of the time-drain-source voltage image corresponding to the target turn-on process at that time point. The current change rate corresponding to a single time point is the slope of the time-drain-source current image corresponding to the target turn-on process at that time point.

[0067] The value of the preset change rate abnormality can be determined by the user according to the actual application scenario. The larger the value of the preset change rate abnormality, the greater the user's demand for determining the abnormal reference value based on the change rate abnormality comparison value. A method for determining the value of the preset change rate abnormality is provided, which detects the historical records of determining the abnormal reference value based on the change rate abnormality comparison value, and records the average value of the change rate abnormality corresponding to the historical records that can meet the user's needs as the preset change rate abnormality.

[0068] When determining the abnormal reference value based on the abnormality of the rate of change, the abnormal reference value = abnormality of the rate of change / average value of abnormality of the rate of change corresponding to the historical records that can meet user needs;

[0069] When determining the abnormal reference value based on the change rate abnormality comparison value, the abnormal reference value = the change rate abnormality comparison value / the average value of the change rate abnormality comparison values ​​corresponding to the historical records that can meet user needs;

[0070] Change rate abnormality comparison value = change rate abnormality corresponding to the target opening process - change rate abnormality corresponding to the reference opening process;

[0071] It can be understood that when the rate of change abnormality is greater than or equal to the preset rate of change abnormality, it means that the drain-source current or drain-source voltage fluctuation of the current turn-on process has obviously deviated from the normal range. At this time, it is necessary to directly quantify the degree of abnormality, respond quickly and trigger adjustment; when the rate of change abnormality is less than the preset rate of change abnormality, although the fluctuation has not reached a significant abnormality, there may be a trend change abnormality. At this time, it is necessary to analyze the changing trend of the abnormality and predict potential risks in advance.

[0072] Specifically, in response to the Miller plateau time being less than a preset Miller plateau time and the stage current difference being less than a preset stage current difference, the driving analysis module performs staged driving on the gate resistance.

[0073] The Miller plateau time is the time during which the gate voltage of the target transistor is maintained at the Miller voltage during the target turn-on process; the Miller voltage is the voltage value when it decreases over time to a stable value during the voltage drop phase of the target turn-on process;

[0074] The stage current difference is the standard deviation of the current comparison values ​​corresponding to each stage;

[0075] The current comparison value corresponding to a single stage = the maximum current change rate corresponding to that stage - the average value of the maximum current change rate corresponding to each historical record that can meet user needs;

[0076] The maximum current change rate corresponding to a single stage is the maximum value of the current change rate corresponding to each time point in the stage during the target opening process;

[0077] The values ​​of the preset Miller platform time and the preset stage current difference can be determined by the user according to the actual application scenario. The greater the user's demand for accuracy in reducing transistor loss, the greater the values ​​of the preset Miller platform time and the preset stage current difference. A method for determining the values ​​of the preset Miller platform time and the preset stage current difference is provided. The historical records of the user's overall driving of the gate resistance are detected, and the average value of the Miller platform time and the average value of the stage current difference corresponding to the historical records that can meet the user's needs are respectively recorded as the preset Miller platform time and the preset stage current difference.

[0078] It is understandable that a too long Miller platform time may lead to increased turn-on loss, and a too large stage current difference indicates that the stability of the current change rate in each stage is poor. When the Miller platform time is less than the preset Miller platform time and the stage current difference is less than the preset stage current difference, it means that the switching characteristics of the target transistor during the turn-on process are relatively stable. By driving in stages and adjusting the gate resistance of different stages in a targeted manner, the dynamic control of the turn-on process can be refined, and the turn-on loss can be minimized, thereby achieving dual optimization of high efficiency and stability; when the Miller platform time is greater than or equal to the preset Miller platform time or the stage current difference is greater than or equal to the preset stage current difference, it means that there is a more obvious switching characteristic abnormality in the turn-on process of the target transistor. At this time, the overall driving mode is adopted, which can effectively control the loss while avoiding additional fluctuations caused by frequent parameter adjustments, thereby achieving a balance between loss and stability.

[0079] Specifically, the stage division module determines whether to perform secondary division for each stage according to the stage comparison value corresponding to each stage, including:

[0080] For a single stage,

[0081] If the stage comparison value corresponding to the stage is greater than or equal to the preset stage comparison value, the stage is divided into two parts;

[0082] If the stage comparison value corresponding to the stage is less than the preset stage comparison value, there is no need to perform secondary division for the stage.

[0083] Among them, the stage comparison value corresponding to a single stage = the current comparison value corresponding to the stage - the average value of the current comparison values ​​corresponding to each stage;

[0084] The value of the preset stage comparison value can be determined by the user according to the actual application scenario. The smaller the value of the preset stage comparison value is, the more refined the stage division is for the user, and the greater the need for more accurate gate resistance adjustment for stages with significant deviations to reduce transistor loss. A method for determining the value of the preset stage comparison value is provided, and the average value of the stage comparison values ​​corresponding to the stages divided twice in the historical records that can meet the user's needs is recorded as the preset stage comparison value.

[0085] Specifically, the stage division module performs associated division according to the gate voltage change value, including:

[0086] For a single stage,

[0087] If the gate voltage change value is greater than or equal to the preset gate voltage change value, then the associated division is performed according to the gate voltage floating value;

[0088] If the gate voltage change value is less than the preset gate voltage change value, correlation division is performed according to the junction temperature change rate.

[0089] The gate voltage change value corresponding to a single stage = the gate voltage corresponding to the final moment of the stage during the target turn-on process - the gate voltage corresponding to the starting moment of the stage during the target turn-on process;

[0090] The value of the preset gate voltage change value can be determined by the user according to the actual application scenario. The smaller the value of the preset gate voltage change value, the greater the user's demand for associated division based on the gate voltage change amount. A method for determining the value of the preset gate voltage change value is provided, which detects the historical records of the user's associated division based on the gate voltage change amount, and records the average value of the gate voltage change values ​​corresponding to the historical records that can meet the user's needs as the preset gate voltage change value;

[0091] The gate voltage floating value corresponding to a single time point = the gate voltage corresponding to the time point - the gate voltage corresponding to a time point earlier than and adjacent to the time point; the junction temperature change rate corresponding to a single time point = the junction temperature corresponding to the time point - the junction temperature corresponding to a time point earlier than and adjacent to the time point; the junction temperature corresponding to a single time point is the actual operating temperature of the PN junction inside the target transistor at that time point, measured by a thermistor or infrared temperature measurement, which is a common technical means used by those skilled in the art and will not be described in detail here; it should be noted that for a single time point, if there is no other time point before the time point, the gate voltage floating value and junction temperature change rate corresponding to the time point are both recorded as 0;

[0092] The associated divisions based on the gate voltage floating value include:

[0093] Perform association analysis on each time point of a single stage in order from early to late. When performing association analysis on a single time point, record that time point as the target time point, record all other time points other than the target time point that are not recorded in the association interval as reference time points, record the first reference time point that meets the preset conditions and is later than the target time point as the characteristic time point, record the minimum time range that can include all reference time points before the characteristic time point and the target time point as a correlation interval, and continue to perform association analysis on the time points that are not recorded in the correlation interval until all time points in the stage are recorded in the correlation interval. It should be noted that if, during the analysis process, the last target time point does not have a corresponding characteristic time point, then the time range that can include the last target time point and the last time point of the stage will be recorded as a correlation interval;

[0094] When performing association division according to the gate voltage floating value, the preset condition is that the absolute value of the difference between the gate voltage floating value at the target time point and the gate voltage floating value is greater than the preset gate voltage floating value difference;

[0095] When performing association division based on the junction temperature change rate, the preset condition is that the absolute value of the difference between the junction temperature change rate at the target time point and the target time point is greater than the preset junction temperature change rate difference;

[0096] The user can determine the values ​​of the preset gate voltage floating value difference and the preset junction temperature change rate difference according to the actual application scenario. The greater the user's demand for more accurate gate resistance adjustment in the stage with significant deviation to reduce transistor loss, the smaller the values ​​of the preset gate voltage floating value difference and the preset junction temperature change rate difference. A method for determining the values ​​of the preset gate voltage floating value difference and the preset junction temperature change rate difference is provided. The average value of the reference gate voltage floating value difference corresponding to each associated interval in the historical records that are associated and divided according to the gate voltage floating value and can meet the user's needs is recorded as the preset gate voltage floating value difference. The average value of the reference junction temperature change rate difference corresponding to each associated interval in the historical records that are associated and divided according to the junction temperature change rate difference and can meet the user's needs is recorded as the preset junction temperature change rate difference.

[0097] The reference gate voltage floating value difference and the reference junction temperature change rate difference corresponding to a single associated interval in the historical records are respectively the absolute value of the difference between the gate voltage floating values ​​corresponding to any two time points in the single associated interval and the absolute value of the difference between the junction temperature change rates corresponding to any two time points in the single associated interval;

[0098] Each associated interval in each stage that undergoes secondary division and each stage that does not undergo secondary division is recorded as a pre-adjustment segment;

[0099] It can be understood that if the gate voltage change value is greater than or equal to the preset gate voltage change value, it indicates that the driving signal strength changes significantly, which directly affects the switching speed. At this time, the fluctuation of the gate voltage is the dominant factor in the switching process; if the gate voltage change value is less than the preset gate voltage change value, it means that the driving signal tends to be stable, but the power loss inside the target transistor causes the junction temperature to rise rapidly. At this time, the junction temperature change rate becomes a more sensitive indicator reflecting the degree of loss.

[0100] Specifically, the stage driving module responds that the number of pre-adjustment segments is greater than or equal to the preset number of pre-adjustment segments, and then adjusts the gate resistance for the characteristic pre-adjustment segment;

[0101] The characteristic pre-adjustment section is a pre-adjustment section in which the change threshold is greater than the preset change threshold, and the pre-adjustment section includes each associated interval in each stage that is secondary divided and each stage that is not secondary divided.

[0102] The change threshold corresponding to a single pre-adjustment section = the average gate voltage change corresponding to each time point in the pre-adjustment section during the target turn-on process / the average gate voltage change corresponding to each time point during the target turn-on process + the average junction temperature change rate corresponding to each time point in the pre-adjustment section during the target turn-on process / the average junction temperature change rate corresponding to each time point during the target turn-on process;

[0103] The values ​​of the preset number of pre-adjustment segments and the preset change threshold can be determined by the user according to the actual application scenario. It is understandable that when the number of pre-adjustment segments is large, the overall efficiency may decrease due to insufficient processing power. The greater the precision requirement for improving processing efficiency, the smaller the value of the preset number of pre-adjustment segments and the larger the value of the preset change threshold. A method for determining the values ​​of the preset number of pre-adjustment segments and the preset change threshold is provided. The average value of the number of pre-adjustment segments corresponding to the historical records that adjust the gate resistance for all pre-adjustment segments and can meet the user's needs is recorded as the preset number of pre-adjustment segments, and the change threshold corresponding to each characteristic pre-adjustment segment in the historical records that can meet the user's needs is recorded as the preset change threshold;

[0104] It is understandable that when the number of pre-adjustment segments is greater than or equal to the preset number of pre-adjustment segments, it means that the number of pre-adjustment segments that need to be processed is large, which exceeds the system's ability to efficiently process all segments. At this time, priority should be given to focusing on the characteristic pre-adjustment segments that have the most significant impact on the switching characteristics, and achieving a balance between loss optimization and resource consumption through targeted adjustment.

[0105] When the number of pre-adjustment segments is less than the preset number of pre-adjustment segments, it means that the number of pre-adjustment segments that need to be processed is small, and the system has sufficient capacity to perform fine-tuning on all segments, thereby effectively improving the optimization effect.

[0106] Specifically, the stage driving module responds that the number of pre-adjustment segments is less than the preset number of pre-adjustment segments, and then adjusts the gate resistance for all pre-adjustment segments.

[0107] Specifically, the stage driving module increases and adjusts the gate resistance according to the abnormality of the segment change;

[0108] The increase value of the gate resistance corresponding to a single pre-adjustment section is positively correlated with the abnormality degree of the section change corresponding to the pre-adjustment section.

[0109] The abnormality of the segment change corresponding to a single pre-adjustment segment = |standard deviation of the current change rate corresponding to each time point in the pre-adjustment segment during the target activation process - preset current change rate fluctuation value| / preset current change rate abnormality + |standard deviation of the voltage change rate corresponding to each time point in the pre-adjustment segment during the target activation process - preset voltage change rate fluctuation value| / preset voltage change rate abnormality;

[0110] For a single pre-adjustment segment, the segment change abnormality corresponding to the pre-adjustment segment is recorded as a1. Each pre-adjustment segment in the historical record that can meet user needs and adjust the gate resistance according to the segment change abnormality is recorded as an analysis pre-adjustment segment. The average value of the segment change abnormality corresponding to each analysis pre-adjustment segment is recorded as a2. The average value of the increase in gate resistance corresponding to each analysis pre-adjustment segment is recorded as b. The increase in gate resistance corresponding to the pre-adjustment segment = (a1 / a2) × b;

[0111] It can be understood that the abnormal degree of segment change reflects the severity of the fluctuation in the switching process. When the abnormal degree of segment change is high, it indicates that there is a violent oscillation in the switching process. The oscillation energy is dissipated inside the device, increasing the switching loss. Increasing the gate resistance will reduce the gate drive current, slow down the switching speed, and suppress the oscillation caused by parasitic parameters.

[0112] Specifically, in response to the Miller plateau time being greater than or equal to the preset Miller plateau time or the stage current difference being greater than or equal to the preset stage current difference, the driving analysis module performs overall driving on the gate resistor.

[0113] Specifically, the overall driving module increases and adjusts the gate resistance according to the characteristic value of the turn-on phase;

[0114] The increase in the gate resistance is positively correlated with the turn-on phase characterization value.

[0115] Wherein, the characterization value of the opening stage = Miller platform time / preset Miller platform time + stage current difference / preset stage current difference;

[0116] The average value of the increase value of the gate resistance corresponding to each historical record that can meet the user's demand for the overall driving of the gate resistance is denoted as b0, and the average value of the turn-on stage characteristic value corresponding to each historical record that can meet the user's demand for the overall driving of the gate resistance is denoted as c;

[0117] The increase value of the gate resistance = (the turn-on stage characteristic value / c) x b0;

[0118] It can be understood that the shorter the Miller platform time, the faster the device turn-on speed, the higher the difference, and the greater the stage current difference, indicating that the current waveform is less smooth, and there may be oscillation or spikes, which will also increase the loss. The turn-on stage characteristic value comprehensively quantifies the "fastness" and "instability" of the switching process. The greater the turn-on stage characteristic value, the faster the switching speed or the more severe the current fluctuation, and the gate resistance needs to be increased to slow down the switching speed and suppress the oscillation caused by the parasitic parameters.

[0119] So far, the technical solutions of the present application have been described in combination with the preferred embodiments shown in the drawings, but those skilled in the art can easily understand that the protection scope of the present application is obviously not limited to these specific embodiments. Those skilled in the art can make equivalent changes or replacements to the related technical features without departing from the principles of the present application, and the technical solutions after the changes or replacements will fall within the protection scope of the present application.

Claims

1. A transistor drive system with adaptive variable resistance, characterized in that: include: Data acquisition module, used to collect transistor data; a drive analysis module connected to the data acquisition module, configured to determine whether gate resistance driving is required for the current turn-on process based on the abnormal reference value, and, when gate resistance driving is required for the current turn-on process, to perform phased driving or overall driving of the gate resistance based on the Miller platform time and the change rate fluctuation value; a stage division module, connected to the data acquisition module and the drive analysis module respectively, for determining whether to perform secondary division for each stage according to the stage comparison value corresponding to each stage during the staged drive, and when performing secondary division, performing associated division according to the gate voltage change value to obtain a plurality of associated intervals; a stage driving module connected to the stage analyzing module, configured to determine, based on the number of pre-adjustment segments, whether to adjust the gate resistance for a characteristic pre-adjustment segment or for all pre-adjustment segments, and to adjust the gate resistance based on the degree of abnormality of segment changes; The overall driving module is connected to the driving analysis module and is used to adjust the gate resistance according to the turn-on phase characterization value during the overall driving.

2. The transistor driving system with adaptive variable resistance according to claim 1, characterized in that: The driving analysis module performs gate resistance driving for the current turn-on process when the abnormal reference value is greater than or equal to the preset abnormal reference value; Wherein, the abnormal reference value is determined according to the abnormality of the rate of change of the target opening process; If the change rate abnormality is greater than or equal to the preset change rate abnormality, determining an abnormal reference value according to the change rate abnormality; If the change rate abnormality is less than the preset change rate abnormality, an abnormal reference value is determined according to the change rate abnormality comparison value.

3. The transistor driving system with adaptive variable resistance according to claim 2, characterized in that: In response to the Miller plateau time being less than the preset Miller plateau time and the stage current difference being less than the preset stage current difference, the driving analysis module performs staged driving on the gate resistance.

4. The transistor driving system with adaptive variable resistance according to claim 3, characterized in that: The stage division module determines whether to perform secondary division for each stage according to the stage comparison value corresponding to each stage, including: For a single stage, If the stage comparison value corresponding to the stage is greater than or equal to the preset stage comparison value, the stage is divided into two parts; If the stage comparison value corresponding to the stage is less than the preset stage comparison value, there is no need to perform secondary division for the stage.

5. The transistor driving system with adaptive variable resistance according to claim 4, characterized in that: The stage division module performs associated division according to the gate voltage change value, including: For a single stage, If the gate voltage change value is greater than or equal to the preset gate voltage change value, then the associated division is performed according to the gate voltage floating value; If the gate voltage change value is less than the preset gate voltage change value, correlation division is performed according to the junction temperature change rate.

6. The transistor driving system with adaptive variable resistance according to claim 5, characterized in that: The stage driving module responds that the number of pre-adjustment segments is greater than or equal to the preset number of pre-adjustment segments, and then adjusts the gate resistance according to the characteristic pre-adjustment segment; The characteristic pre-adjustment section is a pre-adjustment section in which the change threshold is greater than the preset change threshold, and the pre-adjustment section includes each associated interval in each stage that is secondary divided and each stage that is not secondary divided.

7. The transistor driving system with adaptive variable resistance according to claim 6, characterized in that: The stage driving module responds that the number of pre-adjustment segments is less than the preset number of pre-adjustment segments, and then adjusts the gate resistance for all pre-adjustment segments.

8. The transistor driving system with adaptive variable resistance according to claim 7, characterized in that: The stage driving module increases and adjusts the gate resistance according to the abnormality of the segment change; The increase value of the gate resistance corresponding to a single pre-adjustment section is positively correlated with the abnormality degree of the section change corresponding to the pre-adjustment section.

9. The transistor driving system with adaptive variable resistance according to claim 3, characterized in that: In response to the Miller plateau time being greater than or equal to the preset Miller plateau time or the stage current difference being greater than or equal to the preset stage current difference, the driving analysis module performs overall driving on the gate resistor.

10. The transistor driving system with adaptive variable resistance according to claim 9, characterized in that: The overall driving module increases and adjusts the gate resistance according to the characteristic value of the opening stage; The increase in the gate resistance is positively correlated with the turn-on phase characterization value.

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