Three-dimensional interconnection structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a three-dimensional interconnection structure and a manufacturing method thereof, and aims to improve the frequency and stability of electric signal transmission. In the three-dimensional interconnection structure provided by the invention, a first interconnection structure is connected with a connection sub-layer and a first conductive sub-layer, and a second interconnection structure is connected with the connection sub-layer and another first conductive sub-layer; in space, an integral structure formed by connecting the first shielding sub-layer, the second shielding sub-layer and the shielding interconnection structure can surround the two first conductive sub-layers, the first interconnection structure, the second interconnection structure and the connection sub-layer. Furthermore, in the process of realizing electric connection of the three-dimensional interconnection structure, the first shielding sub-layer, the second shielding sub-layer and the shielding interconnection structure can realize shielding of external electromagnetic interference of the three-dimensional interconnection structure and shielding of a surrounding electrostatic field; the transmission frequency and stability of electric signals in the first conductive sub-layer, the first interconnection structure, the second interconnection structure and the connection sub-layer are improved.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a three-dimensional interconnection structure and a manufacturing method thereof. Background Art

[0002] With the rapid development of artificial intelligence, big data, data centers, etc., the amount of data processing has increased significantly, and data signals are also transmitted between inter-board devices at a higher rate. In order to achieve real-time sharing and collaborative processing of data between inter-board devices, the inter-board interconnection transmission lines need to have large bandwidth, low loss, and no dispersion characteristics, and be compatible with high-speed backplane processes.

[0003] Existing transmission lines are susceptible to external electromagnetic interference, resulting in unstable electrical signal transmission. Summary of the Invention

[0004] The embodiments of the present application provide a three-dimensional interconnect structure and a manufacturing method thereof, aiming to improve the frequency and stability of electrical signal transmission.

[0005] On the one hand, an embodiment of the present application provides a three-dimensional interconnect structure, which includes a first plate and a second plate arranged in a stacked manner, a first interconnect structure and a second interconnect structure, and a shielding interconnect structure. The first plate includes a first metal layer, the first metal layer includes a first shielding sublayer and at least two first conductive sublayers, the first shielding sublayer surrounds the two first conductive sublayers, and the two first conductive sublayers are spaced apart perpendicular to the stacking direction; the second plate includes a second metal layer, the second metal layer includes a connecting sublayer and a second shielding sublayer, the second shielding layer surrounds the connecting sublayer, and in the stacking direction, the projections of the two first conductive sublayers are located within the projection of the connecting sublayer; the first interconnect structure connects the connecting sublayer and the first conductive sublayer, the second interconnect structure connects the connecting sublayer and another first conductive sublayer; and the shielding interconnect structure connects the first shielding sublayer and the second shielding sublayer.

[0006] In the three-dimensional interconnection structure provided by the present application, the first interconnection structure connects the connecting sublayer and the first conductive sublayer, and the second interconnection structure connects the connecting sublayer and another first conductive sublayer; on the first plate, the first shielding sublayer surrounds the two first conductive sublayers, and on the second plate, the second shielding sublayer surrounds the connecting sublayer; and the shielding interconnection structure connects the first shielding sublayer and the second shielding sublayer. In terms of space, the overall structure formed by the first shielding sublayer, the second shielding sublayer and the shielding interconnection structure can surround the two first conductive sublayers, the first interconnection structure, the second interconnection structure and the connecting sublayer; and further, in the process of realizing electrical connection of the three-dimensional interconnection structure, the first shielding sublayer, the second shielding sublayer and the shielding interconnection structure can realize shielding of the three-dimensional interconnection structure from external electromagnetic interference and shielding of the surrounding electrostatic field, thereby improving the frequency and stability of the transmission of electrical signals in the first conductive sublayer, the first interconnection structure, the second interconnection structure and the connecting sublayer.

[0007] In some embodiments, the first plate further includes a first insulating layer, at least one side of which is provided with a first metal layer; the second plate further includes a second insulating layer, at least one side of which is provided with a second metal layer.

[0008] Through the above arrangement, both the first and second plates can be formed from a substrate comprising an insulating layer and a metal layer disposed on at least one side of the insulating layer. Portions of the metal layer on the substrate can be removed to form patterns of two first conductive sublayers and a first shielding sublayer, thereby forming the first metal layer; the insulating layer of the substrate then forms the first insulating layer. Portions of the metal layer on the substrate can also be removed to form patterns of a connecting sublayer and a second shielding sublayer, thereby forming the second metal layer; the insulating layer of the substrate then forms the second insulating layer. Since both the first and second plates can be formed by removing portions of the metal layer from the substrate, the formation process of the first and second plates is facilitated and improved, thereby simplifying the steps involved in forming the three-dimensional interconnected structure and improving production efficiency.

[0009] In some embodiments, the three-dimensional interconnection structure also includes a third plate, which is located between the first plate and the second plate, and the third plate includes a third insulating layer and a third metal layer, and the third metal layer is provided on at least one side of the third insulating layer; the third metal layer includes a third shielding sublayer and two third conductive sublayers, the third shielding sublayer surrounds the two third conductive sublayers, and the two third conductive sublayers are spaced apart perpendicular to the stacking direction; wherein, a first conductive sublayer and a third conductive sublayer are arranged along the stacking direction; the first interconnection structure passes through the first insulating layer and the third insulating layer, and the first interconnection structure connects the first conductive sublayer, the third conductive sublayer and the connecting sublayer, the second interconnection structure passes through the first insulating layer and the third insulating layer, and the second interconnection structure connects another first conductive sublayer, another third conductive sublayer and the connecting sublayer; the shielding interconnection structure passes through the first insulating layer, the second insulating layer and the third insulating layer, and the shielding interconnection structure connects the first shielding sublayer, the second shielding sublayer and the third shielding sublayer.

[0010] Through the above arrangement, the third plate can increase the distance between the first plate and the second plate, thereby increasing the distance between the first metal layer and the second metal layer, and reducing the coupling effect between the first shielding sublayer and the connecting sublayer.

[0011] In some embodiments, the third insulating layer includes a third insulating sublayer and a first supporting structure. In the stacking direction, the projection of the third insulating sublayer is located within the projection of the third shielding sublayer; one end of the first supporting structure is in contact with a third conductive sublayer, and the other end of the first supporting structure is connected to the third insulating sublayer. The first interconnection structure and the second interconnection structure pass through the first supporting structure, and the shielding interconnection structure passes through the third insulating sublayer.

[0012] Through this arrangement, two independent first support structures exist within the third shielding sublayer of the annular structure, allowing the three-dimensional interconnect structure to form a coaxial structure. The first interconnect structure, the second interconnect structure, the first conductive sublayer, the third conductive sublayer, and the connecting sublayer constitute the inner conductor, while the shielding interconnect structure, the first shielding sublayer, the second shielding sublayer, and the third shielding layer constitute the outer conductor. The first, third, and second plates enclose a partial cavity, reducing the dielectric constant along the transmission paths of the first and second interconnect structures. While maintaining a constant characteristic impedance, the size of the three-dimensional interconnect structure can be reduced, thereby achieving miniaturization.

[0013] In some embodiments, two third shielding sublayers are provided and are located on both sides of the third insulating sublayer respectively; the shielding interconnection structure further includes a first shielding structure, which is located on the inner wall of the third insulating sublayer and is connected to both third shielding sublayers.

[0014] Through the above arrangement, the first shielding structure surrounds the first interconnection structure and the second interconnection structure, thereby improving the shielding effect of the shielding interconnection structure on external electromagnetic interference of the three-dimensional interconnection structure.

[0015] In some embodiments, the three-dimensional interconnection structure also includes a fourth plate, which is located on the side of the second plate facing away from the first plate, and the fourth plate includes a fourth insulating layer and a fourth metal layer, and the fourth metal layer is at least arranged on one side of the fourth insulating layer; the shielding interconnection structure passes through the first insulating layer and the second insulating layer, and the shielding interconnection structure connects the first shielding sublayer, the second shielding sublayer and the fourth metal layer.

[0016] Through the above-mentioned arrangement, the fourth metal layer on the fourth plate is located on one side of the connecting sublayer, and the fourth metal layer is connected to the first shielding sublayer and the second shielding sublayer through the shielding interconnection structure. The first shielding sublayer and the second shielding sublayer shield the interference of external electromagnetic waves on the three-dimensional interconnection structure perpendicular to the stacking direction of the plates, and the fourth metal layer shields the interference of external electromagnetic waves on the three-dimensional interconnection structure in the stacking direction; the shielding effect of external electromagnetic interference on the three-dimensional interconnection structure is further achieved, and the frequency and stability of the transmission of electrical signals in the first conductive sublayer, the first interconnection structure, the second interconnection structure and the connecting sublayer are improved.

[0017] In some embodiments, the three-dimensional interconnection structure also includes a fifth plate, the fifth plate is located between the fourth plate and the second plate, the fifth plate includes a fifth insulating layer and a fifth metal layer, and the fifth metal layer is arranged on at least one side of the fifth insulating layer; the shielding interconnection structure passes through the first insulating layer, the second insulating layer and the fifth insulating layer, and the shielding interconnection structure connects the first shielding sublayer, the second shielding sublayer, the fifth metal layer and the fourth metal layer.

[0018] Through the above arrangement, the fifth plate can increase the distance between the second plate and the fourth plate, thereby increasing the distance between the second metal layer and the fourth metal layer, and reducing the coupling effect between the connecting sublayer and the fourth metal layer.

[0019] In some embodiments, a projection of the fifth insulating layer is located within a projection of the second shielding sublayer.

[0020] Through the above setting, the second plate, the fourth plate and the fifth plate enclose a cavity, which reduces the dielectric constant on the transmission path of the connecting sublayer. Through the above setting, the size of the three-dimensional interconnection structure can also be reduced to achieve miniaturization of the three-dimensional interconnection structure.

[0021] In the above embodiment, the fifth insulating layer includes a fifth insulating sublayer and a second supporting structure. The fifth insulating sublayer is arranged around the second supporting structure. Both ends of the second supporting structure are connected to the fifth insulating sublayer. In the stacking direction, the projection of the fifth insulating sublayer is located within the projection of the second shielding sublayer.

[0022] In some embodiments, two fifth metal layers are provided and are located on both sides of the fifth insulating layer respectively; the shielding interconnection structure further includes a second shielding structure, which is located on the inner wall of the fifth insulating layer and is connected to both fifth metal layers.

[0023] Through the above arrangement, the second shielding structure surrounds the first interconnection structure and the second interconnection structure, thereby improving the shielding effect of the shielding interconnection structure on external electromagnetic interference of the three-dimensional interconnection structure.

[0024] On the other hand, the present application also provides a method for manufacturing a three-dimensional interconnected structure, the method comprising:

[0025] forming a first plate, the first plate comprising a first metal layer, the first metal layer comprising a first shielding sublayer and at least two first conductive sublayers, the first shielding sublayer surrounding the two first conductive sublayers, the two first conductive sublayers being spaced apart in a direction perpendicular to the stacking direction;

[0026] forming a second plate, the second plate comprising a second metal layer, the second metal layer comprising a connecting sublayer and a second shielding sublayer, the second shielding sublayer surrounding the connecting sublayer;

[0027] Bonding the first plate and the second plate so that, in the stacking direction, the projections of the two first conductive sublayers are located within the projection of the connecting sublayer;

[0028] forming a first interconnect structure and a second interconnect structure, wherein the first interconnect structure connects the first conductive sublayer and the connecting sublayer, and the second interconnect structure connects another first conductive sublayer and the connecting sublayer;

[0029] A shielding interconnect structure is formed, connecting the first shielding sublayer and the second shielding sublayer.

[0030] It can be understood that the beneficial effects achieved by the method for manufacturing the three-dimensional interconnected structure provided in the above embodiment of the present application can be referred to the beneficial effects of the three-dimensional interconnected structure described above, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a schematic structural diagram of a substrate in an embodiment of the present application;

[0032] Figure 2 This is a schematic structural diagram of a three-dimensional interconnected structure in an embodiment of the present application;

[0033] Figure 3 for Figure 2 Cross-section along the AA direction;

[0034] Figure 4 for Figure 2 Cross-section along the mid-BB direction;

[0035] Figure 5 This is a schematic structural diagram of the first plate in the embodiment of the present application;

[0036] Figure 6 This is a schematic structural diagram of the second plate in the embodiment of this application;

[0037] Figure 7 This is a schematic structural diagram of the third plate in the embodiment of this application;

[0038] Figure 8 This is a schematic structural diagram of the fourth plate in the embodiment of the present application;

[0039] Figure 9 This is a schematic structural diagram of the fifth plate in the embodiment of this application.

[0040] Reference numerals: 100, three-dimensional interconnect structure; 1, substrate; 2, insulating layer; 3, metal layer; 110, first interconnect structure; 120, second interconnect structure; 130, shielding interconnect structure; 131, first shielding structure; 132, second shielding structure; 10, first plate; 11, first metal layer; 111, first shielding sublayer; 112, first conductive sublayer; 12, first insulating layer; 20, second plate; 21, second metal layer; 211, connecting sublayer; 2 12. Second shielding sublayer; 22. Second insulating layer; 30. Third plate; 31. Third metal layer; 311. Third shielding sublayer; 312. Third conductive sublayer; 32. Third insulating layer; 321. Third insulating sublayer; 322. First supporting structure; 40. Fourth plate; 41. Fourth metal layer; 42. Fourth insulating layer; 50. Fifth plate; 51. Fifth metal layer; 52. Fifth insulating layer; 521. Fifth insulating sublayer; 522. Second supporting structure. DETAILED DESCRIPTION

[0041] In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification are described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.

[0042] In this article, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also include elements inherent to such process, method, article or equipment. In the absence of further restrictions, the elements defined by the statement "comprising a ..." do not exclude the presence of other identical elements in the process, method, article or equipment comprising the elements. The term "two or more" includes two or more than two cases.

[0043] Reference Figures 1 to 4The embodiment of the present application provides a three-dimensional interconnect structure 100, which includes a first plate 10 and a second plate 20 stacked together. The first plate 10 and the second plate 20 can both be formed by a substrate 1, wherein the substrate 1 includes an insulating layer 2 and a metal layer 3 disposed at least on one side of the insulating layer 2. Exemplarily, the metal layer 3 is disposed on both sides of the insulating layer 2. For example, the substrate 1 can include a metal core printed circuit board (MCPCB) or an insulated metal substrate (IMS) PCB.

[0044] Reference Figure 1 and Figure 5 The first plate 10 includes a first metal layer 11 and a first insulating layer 12. The first metal layer 11 is disposed on at least one side of the first insulating layer 12. The first metal layer 11 includes a first shielding sublayer 111 and at least two first conductive sublayers 112. The first shielding sublayer 111 surrounds the two first conductive sublayers 112, and the two first conductive sublayers 112 are spaced apart perpendicular to the stacking direction. In an embodiment in which the first plate 10 is formed by a substrate 1, a portion of the metal layer 3 on the substrate 1 can be removed to form a pattern of the two first conductive sublayers 112 and the first shielding sublayer 111 to form the first metal layer 11. The insulating layer 2 of the substrate 1 forms the first insulating layer 12.

[0045] Reference Figure 1 and Figure 6 The second plate 20 includes a second metal layer 21 and a second insulating layer 22. The second metal layer 21 is disposed on at least one side of the second insulating layer 22. The second metal layer 21 includes a connecting sublayer 211 and a second shielding sublayer 212. The second shielding sublayer 212 surrounds the connecting sublayer 211 in the stacking direction, and the projections of the two first conductive sublayers 112 are located within the projection of the connecting sublayer 211. In the embodiment where the second plate 20 is formed by the substrate 1, a portion of the metal layer 3 on the substrate 1 can be removed to form the pattern of the connecting sublayer 211 and the second shielding sublayer 212 to form the second metal layer 21; and the insulating layer 2 of the substrate 1 forms the second insulating layer 22.

[0046] It can be understood that since the first plate 10 and the second plate 20 can be formed by removing part of the metal layer 3 on the substrate 1, the consistency in the process of forming the first plate 10 and the second plate 20 is improved, thereby simplifying the steps of forming the three-dimensional interconnected structure 100 and improving production efficiency.

[0047] Reference Figure 3 and Figure 4In the above embodiment, the three-dimensional interconnect structure 100 further includes a first interconnect structure 110 and a second interconnect structure 120. The first interconnect structure 110 extends along the stacking direction of the first plate 10 and the second plate 20, and connects the connecting sublayer 211 on the second plate 20 and one first conductive sublayer 112 on the first plate 10. The second interconnect structure 120 also extends along the stacking direction of the first plate 10 and the second plate 20, and connects the connecting sublayer 211 on the second plate 20 and another first conductive sublayer 112 on the first plate 10. The two first conductive sublayers 112 on the first plate 10 are used to electrically connect to other electronic devices.

[0048] For example, one first conductive sublayer 112 can be electrically connected to one electronic device, and another first conductive sublayer 112 can be electrically connected to another electronic device. With this arrangement, one electronic device can transmit an electrical signal to the connecting sublayer 211 through the first interconnect structure 110 connected to one first conductive sublayer 112, and then transmit the electrical signal to another electronic device through the other first conductive sublayer 112 through the second interconnect structure 120, thereby realizing an electrical connection between the two electronic devices.

[0049] For another example, a single electronic device may have two or more electrical connection points. One first conductive sublayer 112 may be electrically connected to one electrical connection point on the electronic device, and another first conductive sublayer 112 may be electrically connected to another electrical connection point on the same electronic device. With this arrangement, one electrical connection point may transmit an electrical signal to the connecting sublayer 211 via the first interconnect structure 110 connected to the first conductive sublayer 112, and then transmit the electrical signal to the other electrical connection point via the second interconnect structure 120 through the other first conductive sublayer 112, thereby achieving electrical connection between the two electrical connection points on the same electronic device. The electronic device may be a semiconductor structure, an antenna, a communication device, etc.

[0050] Continue to refer to Figure 3 and Figure 4 In the above embodiment, the three-dimensional interconnect structure 100 further includes a shielding interconnect structure 130. The shielding interconnect structure 130 also extends along the stacking direction of the first plate 10 and the second plate 20. The shielding interconnect structure 130 connects the first shielding sublayer 111 on the first plate 10 and the second shielding sublayer 212 on the second plate 20. A plurality of shielding interconnect structures 130 may be provided, each of which is arranged parallel to the first interconnect structure 110 and the second interconnect structure 120. The plurality of shielding interconnect structures 130 are arranged around the first interconnect structure 110 and the second interconnect structure 120.

[0051] In the three-dimensional interconnect structure 100 provided in the embodiment of the present application, the first interconnect structure 110 connects the connecting sublayer 211 and the first conductive sublayer 112, and the second interconnect structure 120 connects the connecting sublayer 211 and another first conductive sublayer 112; on the first plate 10, the first shielding sublayer 111 surrounds the two first conductive sublayers 112, and on the second plate 20, the second shielding sublayer 212 surrounds the connecting sublayer 211; and the shielding interconnect structure 130 connects the first shielding sublayer 111 and the second shielding sublayer 212. In space, the first shielding sublayer 111, the second shielding sublayer 212, and the shielding interconnect structure 130 are connected to form an overall structure that can surround the two first conductive sublayers 112, the first interconnect structure 110, the second interconnect structure 120, and the connecting sublayer 211; and thus, in the process of achieving electrical connection of the three-dimensional interconnect structure 100, the first shielding sublayer 111, the second shielding sublayer 212, and the shielding interconnect structure 130 can shield the three-dimensional interconnect structure 100 from external electromagnetic interference and the surrounding electrostatic field, thereby improving the frequency and stability of the electrical signal transmitted in the first conductive sublayer 112, the first interconnect structure 110, the second interconnect structure 120, and the connecting sublayer 211.

[0052] In an embodiment where the first shielding sublayer 111 surrounds two first conductive sublayers 112, the first shielding sublayer 111 can be annular (circular, rectangular, etc.) so that the two first conductive sublayers 112 are surrounded by the first shielding sublayer 111; the first shielding sublayer 111 can also be divided into two connected parts, one part surrounding one first conductive sublayer 112, and the other part surrounding the other conductive sublayer.

[0053] In the above embodiment, the three-dimensional interconnect structure 100 constitutes a coaxial structure, wherein the first interconnect structure 110, the second interconnect structure 120, the first conductive sublayer 112 and the connecting sublayer 211 constitute an inner conductor, and the shielding interconnect structure 130, the first shielding sublayer 111 and the second shielding sublayer 212 constitute an outer conductor.

[0054] In some embodiments, reference Figure 1 and Figure 7The three-dimensional interconnect structure 100 also includes a third plate 30, which is located between the first plate 10 and the second plate 20. The third plate 30 includes a third insulating layer 32 and a third metal layer 31. The third metal layer 31 is provided on at least one side of the third insulating layer 32. The third metal layer 31 includes a third shielding sublayer 311 and two third conductive sublayers 312. The third shielding sublayer 311 surrounds the two third conductive sublayers 312, and the two third conductive sublayers 312 are spaced apart perpendicular to the stacking direction. The third plate 30 can also be formed by the substrate 1. The pattern of the two third conductive sublayers 312 and the third shielding sublayer 311 can be formed by removing part of the metal layer 3 on the substrate 1 to form the third metal layer 31. The insulating layer 2 of the substrate 1 forms the third insulating layer 32.

[0055] Continue to refer to Figure 3 and Figure 4 , wherein a first conductive sublayer 112 and a third conductive sublayer 312 are arranged along the stacking direction. In the above embodiment, the first interconnect structure 110 penetrates the first insulating layer 12 and the third insulating layer 32, so that the first interconnect structure 110 connects the first conductive sublayer 112, the third conductive sublayer 312, and the connecting sublayer 211, and the second interconnect structure 120 penetrates the first insulating layer 12 and the third insulating layer 32, so that the second interconnect structure 120 connects another first conductive sublayer 112, another third conductive sublayer 312, and the connecting sublayer 211; and the shielding interconnect structure 130 penetrates the first insulating layer 12, the second insulating layer 22, and the third insulating layer 32, so that the shielding interconnect structure 130 connects the first shielding sublayer 111, the second shielding sublayer 212, and the third shielding sublayer 311.

[0056] Through the above arrangement, the third plate 30 can increase the distance between the first plate 10 and the second plate 20 , thereby increasing the distance between the first metal layer 11 and the second metal layer 21 , and reducing the coupling effect between the first shielding sublayer 111 and the connecting sublayer 211 .

[0057] In the above embodiment, the third shielding sublayer 311 surrounds the two third conductive sublayers 312. The third shielding sublayer 311 can be an annular structure (circular ring, rectangular ring, etc.), so that the two third conductive sublayers 312 are collectively surrounded by the third shielding sublayer 311. The third shielding sublayer 311 and the third insulating layer 32 include a third insulating sublayer 321 and a first supporting structure 322. In the stacking direction, the projection of the third insulating sublayer 321 is located within the projection of the third shielding sublayer 311. The first supporting structure 322 extends in a direction perpendicular to the stacking direction of the plate. One end of the first supporting structure 322 contacts one of the third conductive sublayers 312, and the other end of the first supporting structure 322 is connected to the third insulating sublayer 321. That is to say, there are two independent first supporting structures 322 inside the third shielding sublayer 311 of the annular structure, the first interconnection structure 110 and the second interconnection structure 120 pass through the first supporting structure 322, the shielding interconnection structure 130 passes through the third insulating sublayer 321, and the first supporting structure 322 connected to the third insulating sublayer 321 is used to support the first interconnection structure 110 and the second interconnection structure 120.

[0058] In the above embodiment, the three-dimensional interconnect structure 100 constitutes a coaxial structure, wherein the first interconnect structure 110, the second interconnect structure 120, the first conductive sublayer 112, the third conductive sublayer 312 and the connecting sublayer 211 constitute an inner conductor, and the shielding interconnect structure 130, the first shielding sublayer 111, the second shielding sublayer 212 and the third shielding sublayer 311 constitute an outer conductor.

[0059] And because there are two independent first support structures 322 inside the third shielding sublayer 311 of the annular structure, the first plate 10, the third plate 30, and the second plate 20 enclose a partial cavity, which reduces the dielectric constant on the transmission path of the first interconnection structure 110 and the second interconnection structure 120.

[0060] The approximate formula for calculating characteristic impedance is It can be seen that the dielectric constant ∈ R becomes smaller, while ensuring that the characteristic impedance z0 remains unchanged, Also becomes smaller, among which D d is the inner diameter of the outer conductor, D c In this way, the size of the three-dimensional interconnect structure 100 can be reduced, thereby achieving miniaturization of the three-dimensional interconnect structure 100.

[0061] In the above embodiment, a third metal layer 31 is provided on both sides of the third insulating layer 32, and the third metal layer 31 includes a third shielding sublayer 311. That is, two third shielding sublayers 311 are provided, and the two third shielding sublayers 311 are respectively located on both sides of the third insulating sublayer 321. The shielding interconnection structure 130 also includes a first shielding structure 131. The first shielding structure 131 is located on the inner wall of the third insulating sublayer 321. The first shielding structure 131 is connected to both third shielding sublayers 311, so that the first shielding structure 131 surrounds the first interconnection structure 110 and the second interconnection structure 120, thereby improving the shielding effect of the shielding interconnection structure 130 on external electromagnetic interference of the three-dimensional interconnection structure 100.

[0062] In the above embodiment, referring to Figure 4 and Figure 7 The third insulating layer 32 may further include a support structure. The third insulating sublayer 321 is disposed around the support structure, with both ends of the support structure connected to the third insulating sublayer 321. The support structure extends perpendicularly to the direction of extension of the first supporting structures 322 and is located between the two first supporting structures 322. This arrangement enhances the support provided by the entire third plate 30 to the three-dimensional interconnect structure 100, thereby improving the stability of the three-dimensional interconnect structure 100.

[0063] In some embodiments, reference Figure 1 and Figure 8 The three-dimensional interconnect structure 100 further includes a fourth plate 40. Similarly, the fourth plate 40 can also be formed by the substrate 1. The fourth plate 40 is located on the side of the second plate 20 facing away from the first plate 10. The fourth plate 40 includes a fourth insulating layer 42 and a fourth metal layer 41. The fourth metal layer 41 is disposed on at least one side of the fourth insulating layer 42. In the embodiment in which the fourth plate 40 is formed by the substrate 1, the substrate 1 can be directly used as the fourth plate 40, the metal layer 3 of the substrate 1 can be used as the fourth metal layer 41, and the insulating layer 2 of the substrate 1 can be used as the fourth insulating layer 42. In the embodiment in which the three-dimensional interconnect structure 100 includes a shielding interconnect structure 130, the shielding interconnect structure 130 penetrates the first insulating layer 12 and the second insulating layer 22. The shielding interconnect structure 130 connects the first shielding sublayer 111, the second shielding sublayer 212, and the fourth metal layer 41.

[0064] With the above settings, refer to Figure 3 and Figure 4, so that the fourth metal layer 41 on the fourth plate 40 is located on one side of the connecting sublayer 211, and the fourth metal layer 41 is connected to the first shielding sublayer 111 and the second shielding sublayer 212 through the shielding interconnection structure 130. The first shielding sublayer 111 and the second shielding sublayer 212 shield the external electromagnetic interference on the three-dimensional interconnection structure 100 in the direction perpendicular to the plate stacking direction, and the fourth metal layer 41 shields the external electromagnetic interference on the three-dimensional interconnection structure 100 in the stacking direction; further achieving the shielding effect of the external electromagnetic interference on the three-dimensional interconnection structure 100, and improving the frequency and stability of the electrical signal transmitted in the first conductive sublayer 112, the first interconnection structure 110, the second interconnection structure 120 and the connecting sublayer 211.

[0065] In the above embodiment, referring to Figure 1 and Figure 9 The three-dimensional interconnect structure 100 further includes a fifth plate 50, which is located between the fourth plate 40 and the second plate 20. The fifth plate 50 includes a fifth insulating layer 52 and a fifth metal layer 51, with the fifth metal layer 51 disposed on at least one side of the fifth insulating layer 52. The shielding interconnect structure 130 penetrates the first insulating layer 12, the second insulating layer 22, and the fifth insulating layer 52, connecting the first shielding sublayer 111, the second shielding sublayer 212, the fifth metal layer 51, and the fourth metal layer 41. The fifth plate 50 can also be formed by the substrate 1, and can be formed by removing a portion of the metal layer 3 on the substrate 1 to form the fifth metal layer 51. The insulating layer 2 of the substrate 1 forms the fifth insulating layer 52.

[0066] With the above settings, refer to Figure 3 and Figure 4 The fifth plate 50 can increase the distance between the second plate 20 and the fourth plate 40, thereby increasing the distance between the second metal layer 21 and the fourth metal layer 41, and can reduce the coupling effect between the connecting sublayer 211 and the fourth metal layer 41.

[0067] In the above embodiment, the projection of the fifth insulating layer 52 is located within the projection of the second shielding sublayer 212. Since the projection of the second shielding sublayer 212 in the direction of the plate stacking is annular, the projection of the fifth insulating layer 52 in this direction is also annular, and thus the projection of the fifth metal layer 51 in this direction is also annular. The second plate 20, the fourth plate 40, and the fifth plate 50 enclose a cavity, which reduces the dielectric constant of the transmission path of the connecting sublayer 211. As inferred from the above formula, through the above arrangement, the size of the three-dimensional interconnect structure 100 can also be reduced, thereby achieving miniaturization of the three-dimensional interconnect structure 100.

[0068] In the above embodiment, two fifth metal layers 51 are provided, and the two fifth metal layers 51 are respectively located on both sides of the fifth insulating layer 52; the shielding interconnection structure 130 also includes a second shielding structure 132, and the second shielding structure 132 is located on the inner wall of the fifth insulating layer 52. The second shielding structure 132 is connected to both fifth metal layers 51, so that the second shielding structure 132 surrounds the first interconnection structure 110 and the second interconnection structure 120, thereby improving the shielding effect of the shielding interconnection structure 130 on external electromagnetic interference of the three-dimensional interconnection structure 100.

[0069] In the above embodiment, the fifth insulating layer 52 includes a fifth insulating sublayer 521 and a second supporting structure 522. The fifth insulating sublayer 521 is arranged around the second supporting structure 522. Both ends of the second supporting structure 522 are connected to the fifth insulating sublayer 521. In the stacking direction, the projection of the fifth insulating sublayer 521 is located within the projection of the second shielding sublayer 212.

[0070] Reference Figure 3 and Figure 4 The present application also provides a method for manufacturing a three-dimensional interconnection structure 100. The method is used to form the three-dimensional interconnection structure 100. The steps include S100-S500:

[0071] A substrate 1 is provided. The substrate 1 includes an insulating layer 2 and a metal layer 3 at least disposed on one side of the insulating layer 2 .

[0072] S100: forming a first plate, the first plate comprising a first metal layer, the first metal layer comprising a first shielding sublayer and at least two first conductive sublayers, the first shielding sublayer surrounding the two first conductive sublayers, the two first conductive sublayers being spaced apart perpendicular to the stacking direction.

[0073] The formation of the first plate 10 includes removing a portion of the metal layer 3 on the substrate 1, and the remaining portion of the metal layer 3 includes a first shielding sublayer 111 and two first conductive sublayers 112. Methods for removing the first metal layer 11 may include etching, laser removal, etc. In an embodiment in which the first shielding sublayer 111 surrounds the two first conductive sublayers 112, the first shielding sublayer 111 may be in an annular structure (a circular ring, a rectangular ring, etc.), so that the two first conductive sublayers 112 are surrounded by the first shielding sublayer 111; the first shielding sublayer 111 may also be divided into two connected parts, one part surrounding one first conductive sublayer 112, and the other part surrounding the other first conductive sublayer 112.

[0074] S200: forming a second plate, the second plate including a second metal layer, the second metal layer including a connecting sublayer and a second shielding sublayer, the second shielding sublayer surrounding the connecting sublayer.

[0075] The formation of the second plate 20 includes removing a portion of the metal layer 3 on another substrate 1 , and the remaining portion of the metal layer 3 includes the second shielding sublayer 212 and the connecting sublayer 211 .

[0076] After forming the second plate 20 , the method further includes forming a third plate 30 , a fourth plate 40 and a fifth plate 50 .

[0077] Forming the third plate 30 involves removing a portion of the metal layer 3 on another substrate 1. The remaining portion of the metal layer 3 includes a third shielding sublayer 311 and two third conductive sublayers 312, with the third shielding sublayer 311 surrounding the two third conductive sublayers 312. Portions of the insulating layer 2 are then removed. The remaining portion of the insulating layer 2 forms a third insulating sublayer 321 and a first support structure 322. In the stacking direction, the projection of the third insulating sublayer 321 lies within the projection of the third shielding sublayer 311. One end of the first support structure 322 contacts one of the third conductive sublayers 312, while the other end of the first support structure 322 is connected to the third insulating sublayer 321.

[0078] Forming the fourth plate 40 includes directly using a substrate 1 as the fourth plate 40 , wherein the metal layer 3 of the substrate 1 is the fourth metal layer 41 of the fourth plate 40 , and the insulating layer 2 of the substrate 1 is the fourth insulating layer 42 of the fourth plate 40 .

[0079] Forming fifth plate 50 involves removing a portion of metal layer 3 on yet another substrate 1. The remaining portion of metal layer 3 comprises a fifth metal layer 51, which has a ring-shaped structure. Subsequently, a portion of insulating layer 2 is removed. The remaining portion of insulating layer 2 forms a fifth insulating layer 52, which has a ring-shaped structure.

[0080] S300: Bonding the first plate and the second plate, in which the projections of the two first conductive sublayers are located within the projection of the connecting sublayer in the stacking direction.

[0081] In the stacking direction, the projections of the two first conductive sublayers 112 are located within the projection of the connecting sublayer 211 , so as to facilitate the subsequent connection between the first conductive sublayer 112 and the connecting sublayer 211 .

[0082] In other embodiments, before bonding the first plate 10 and the second plate 20, the first plate 10 and the third plate 30 are bonded together so that a first conductive sublayer 112 and a third conductive sublayer 312 are arranged along the stacking direction; and then the third plate 30 and the second plate 20 are bonded together so that the projections of the two first conductive sublayers 112 are located within the projection of the connecting sublayer 211.

[0083] In the above embodiment, no matter whether the first plate 10 and the second plate 20 are bonded together, or the first plate 10 and the third plate 30 are bonded together first and then the third plate 30 and the second plate 20 are bonded together, the bonding layer may be used.

[0084] For example, in the process of bonding the first plate 10 and the third plate 30, the adhesive layer is first bonded to one side of the third plate 30, and then the shape of the adhesive layer is trimmed according to the shape of the third metal layer 31 on the third plate 30 (that is, only the adhesive layer in contact with the third shielding sublayer 311 and the third conductive sublayer 312 is retained), and then the first plate 10 and the third plate 30 are bonded.

[0085] Subsequently, in the process of bonding the third plate 30 and the second plate 20, the adhesive layer is bonded to the side of the third plate 30 facing away from the first plate 10, and then the shape of the adhesive layer is trimmed according to the shape of the third metal layer 31 on the third plate 30 (that is, only the adhesive layer in contact with the third shielding sublayer 311 and the third conductive sublayer 312 is retained), and then the third plate 30 and the second plate 20 are bonded.

[0086] Through the above arrangement, the bonding between the plates is achieved, and the cavity formed by the first plate 10 , the second plate 20 , and the third plate 30 does not have an adhesive layer.

[0087] S400: forming a first interconnect structure and a second interconnect structure, wherein the first interconnect structure connects a first conductive sublayer and a connecting sublayer, and the second interconnect structure connects another first conductive sublayer and a connecting sublayer.

[0088] The forming of the first interconnection structure 110 and the second interconnection structure 120 includes opening a first interconnection hole and a second interconnection hole on the first plate 10 and the second plate 20 after being bonded.

[0089] The first interconnect hole is opened to penetrate the first conductive sublayer 112 and the first insulating layer 12 in sequence, exposing the connecting sublayer 211 (it can also continue to penetrate the connecting sublayer 211 and the second insulating layer 22); then metal is filled in the first interconnect hole to form a first interconnect structure 110, and the connecting sublayer 211 is connected to a first conductive sublayer 112 through the first interconnect structure 110 to realize the lead-out of one side of the connecting sublayer 211.

[0090] The opened second interconnect hole sequentially penetrates the first conductive sublayer 112, the first insulating layer 12, and exposes the connecting sublayer 211 (here it can also still penetrate the connecting sublayer 211 and the second insulating layer 22); then metal is filled in the second interconnect hole to form a second interconnect structure 120, and the connecting sublayer 211 is connected to the other first conductive sublayer 112 through the second interconnect structure 120 to realize the lead-out of the other side of the connecting sublayer 211.

[0091] In the three-dimensional interconnect structure 100, which includes a first plate 10, a third plate 30 and a second plate 20 bonded in sequence, the first interconnect structure 110 sequentially connects the first conductive sublayer 112, the first insulating layer 12, the third conductive sublayer 312, the first supporting structure 322, and the connecting sublayer 211; the second interconnect structure 120 sequentially connects another first conductive sublayer 112, the first insulating layer 12, the third conductive sublayer 312, the first supporting structure 322, and the connecting sublayer 211.

[0092] In some other embodiments, after forming the first interconnect structure 110 and the second interconnect structure 120 , the method further includes bonding a fifth plate 50 and a fourth plate 40 to a side of the second plate 20 facing away from the first plate 10 .

[0093] In the above embodiment, during the process of bonding the fifth plate 50 and the fourth plate 40 to the second plate 20, the adhesive layer is first bonded to one side of the fifth plate 50, and then the shape of the adhesive layer is trimmed according to the shape of the fifth metal layer 51 on the fifth plate 50 (i.e., only the adhesive layer in contact with the fifth metal layer 51 is retained), and then the second plate 20 and the fifth plate 50 are bonded.

[0094] Subsequently, in the process of bonding the fourth plate 40 and the fifth plate 50, the adhesive layer is bonded to the side of the fifth plate 40 facing away from the second plate 20, and then the shape of the adhesive layer is trimmed according to the shape of the fifth metal layer 51 on the fifth plate 50 (that is, only the adhesive layer in contact with the fifth metal layer 51 is retained), and then the fifth plate 30 and the fourth plate 40 are bonded.

[0095] Through the above arrangement, the bonding between the plates is achieved, and the cavity formed by the second plate 20, the fifth plate 50, and the fourth plate 40 does not have an adhesive layer.

[0096] S500: forming a shielding interconnection structure, wherein the shielding interconnection structure connects the first shielding sublayer and the second shielding sublayer.

[0097] The shielding interconnect structure 130 is formed by opening a shielding interconnect hole in the bonded first plate 10 and second plate 20. The opened shielding interconnect hole sequentially penetrates the first shielding sublayer 111 and the first insulating layer 12, exposing the second shielding sublayer 212 (here, it may also continue to penetrate the second shielding sublayer 212 and the second insulating layer 22); then, metal is filled in the shielding interconnect hole to form the shielding interconnect structure 130. The shielding interconnect structure 130 connects the first shielding sublayer 111 and the second shielding sublayer 212, so that the first shielding sublayer 111, the second shielding sublayer 212, and the shielding interconnect structure 130 can surround the first interconnect structure 110 and the second interconnect structure 120, thereby shielding the three-dimensional interconnect structure 100 from external electromagnetic interference and the surrounding electrostatic field, thereby improving the frequency and stability of the transmission of electrical signals in the first conductive sublayer 112, the first interconnect structure 110, the second interconnect structure 120, and the connecting sublayer 211.

[0098] In the three-dimensional interconnection structure 100, which includes a first plate 10, a third plate 30, a second plate 20, a fourth plate 40 and a fifth plate 50 bonded in sequence, the shielding interconnection structure 130 connects the first shielding sublayer 111, the first insulating layer 12, the third shielding sublayer 311, the third insulating layer 32, the second shielding sublayer 212, the fifth metal layer 51 and the fourth metal layer 41 in sequence.

[0099] It should be noted that, in the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0100] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

[0101] Although the preferred embodiments of this specification have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of this specification.

[0102] Obviously, those skilled in the art may make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if such changes and modifications fall within the scope of the claims of this specification and their equivalents, this specification is intended to include such changes and modifications.

Claims

1. A three-dimensional interconnected structure, characterized in that: include: A first plate and a second plate are stacked; The first plate includes a first metal layer, the first metal layer includes a first shielding sublayer and at least two first conductive sublayers, the first shielding sublayer surrounds two first conductive sublayers, and the two first conductive sublayers are spaced apart in a direction perpendicular to the stacking direction; The second plate includes a second metal layer, the second metal layer includes a connecting sublayer and a second shielding sublayer, the second shielding sublayer surrounds the connecting sublayer, and in the stacking direction, projections of the two first conductive sublayers are located within the projection of the connecting sublayer; a first interconnect structure and a second interconnect structure, wherein the first interconnect structure connects the connection sublayer and the first conductive sublayer, and the second interconnect structure connects the connection sublayer and another first conductive sublayer; A shielding interconnect structure connects the first shielding sublayer and the second shielding sublayer.

2. The three-dimensional interconnection structure according to claim 1, characterized in that: The first plate further includes a first insulating layer, and the first metal layer is provided on at least one side of the first insulating layer; The second plate further includes a second insulating layer, and the second metal layer is disposed on at least one side of the second insulating layer.

3. The three-dimensional interconnection structure according to claim 2, characterized in that: The three-dimensional interconnect structure further includes a third plate, the third plate being located between the first plate and the second plate, the third plate including a third insulating layer and a third metal layer, the third metal layer being provided on at least one side of the third insulating layer; the third metal layer including a third shielding sublayer and two third conductive sublayers, the third shielding sublayer surrounding the two third conductive sublayers, the two third conductive sublayers being spaced apart and arranged perpendicular to the stacking direction; wherein one first conductive sublayer and one third conductive sublayer are arranged along the stacking direction; The first interconnect structure penetrates the first insulating layer and the third insulating layer, and connects the first conductive sublayer, the third conductive sublayer, and the connecting sublayer; the second interconnect structure penetrates the first insulating layer and the third insulating layer, and connects another first conductive sublayer, another third conductive sublayer, and the connecting sublayer; The shielding interconnection structure penetrates the first insulating layer, the second insulating layer, and the third insulating layer, and the shielding interconnection structure connects the first shielding sublayer, the second shielding sublayer, and the third shielding sublayer.

4. The three-dimensional interconnection structure according to claim 3, characterized in that The third insulating layer includes a third insulating sublayer and a first supporting structure. In the stacking direction, the projection of the third insulating sublayer is located within the projection of the third shielding sublayer; one end of the first supporting structure is in contact with one of the third conductive sublayers, and the other end of the first supporting structure is connected to the third insulating sublayer. The first interconnection structure and the second interconnection structure pass through the first supporting structure, and the shielding interconnection structure passes through the third insulating sublayer.

5. The three-dimensional interconnection structure according to claim 4, characterized in that: There are two third shielding sublayers, which are respectively located on both sides of the third insulating sublayer; The shielding interconnection structure further includes a first shielding structure, which is located on the inner wall of the third insulating sub-layer and is connected to both of the third shielding sub-layers.

6. The three-dimensional interconnection structure according to claim 2, characterized in that: The three-dimensional interconnect structure further includes a fourth plate, the fourth plate being located on a side of the second plate facing away from the first plate, the fourth plate including a fourth insulating layer and a fourth metal layer, the fourth metal layer being disposed at least on one side of the fourth insulating layer; The shielding interconnect structure penetrates the first insulating layer and the second insulating layer, and the shielding interconnect structure connects the first shielding sublayer, the second shielding sublayer and the fourth metal layer.

7. The three-dimensional interconnection structure according to claim 6, characterized in that: The three-dimensional interconnect structure further includes a fifth plate, the fifth plate being located between the fourth plate and the second plate, the fifth plate including a fifth insulating layer and a fifth metal layer, the fifth metal layer being disposed on at least one side of the fifth insulating layer; The shielding interconnect structure penetrates the first insulating layer, the second insulating layer, and the fifth insulating layer, and connects the first shielding sublayer, the second shielding sublayer, the fifth metal layer, and the fourth metal layer.

8. The three-dimensional interconnection structure according to claim 7, characterized in that: The fifth insulating layer includes a fifth insulating sublayer and a second supporting structure. The fifth insulating sublayer is arranged around the second supporting structure. Both ends of the second supporting structure are connected to the fifth insulating sublayer. In the stacking direction, the projection of the fifth insulating sublayer is located within the projection of the second shielding sublayer.

9. The three-dimensional interconnection structure according to claim 8, characterized in that: There are two fifth metal layers, and they are respectively located on both sides of the fifth insulating layer; The shielding interconnection structure further includes a second shielding structure, which is located on the inner wall of the fifth insulating layer and is connected to both of the fifth metal layers.

10. A method for manufacturing a three-dimensional interconnected structure, characterized in that: include: forming a first plate, wherein the first plate includes a first metal layer, the first metal layer includes a first shielding sublayer and at least two first conductive sublayers, the first shielding sublayer surrounds two first conductive sublayers, and the two first conductive sublayers are spaced apart in a direction perpendicular to the stacking direction; forming a second plate, wherein the second plate includes a second metal layer, the second metal layer includes a connecting sublayer and a second shielding sublayer, and the second shielding sublayer surrounds the connecting sublayer; Bonding the first plate and the second plate so that, in the stacking direction, the projections of the two first conductive sublayers are located within the projection of the connecting sublayer; forming a first interconnect structure and a second interconnect structure, wherein the first interconnect structure connects the first conductive sublayer and the connecting sublayer, and the second interconnect structure connects another first conductive sublayer and the connecting sublayer; A shielding interconnect structure is formed, the shielding interconnect structure connecting the first shielding sub-layer and the second shielding sub-layer.

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