Electroluminescent device chip packaging structure and packaging method

Abstract

The invention provides an electroluminescent device chip packaging structure and packaging method, and relates to the field of electroluminescent device chip packaging, the packaging structure comprises an electroluminescent device chip and a substrate, the substrate is provided with a circuit connection structure, the electroluminescent device chip is fixed on the substrate, and the circuit connection structure is arranged on the substrate. Electrical connection is realized through the circuit connection structure; the packaging layer covers the electroluminescent device chip and part of the surface of the substrate and is used for protecting the electroluminescent device chip; a heat dissipation structure, wherein the heat dissipation structure is connected with the substrate; the fluorescent powder layer is arranged in the packaging layer or between the packaging layer and the electroluminescent device chip; and the connecting structure is arranged on the substrate and is used for mounting the substrate to the electroluminescent device lamp device. According to the invention, the problem that the use effect and the service life of the electroluminescent device chip are easily affected due to the lack of a heat dissipation structure in the conventional electroluminescent device chip packaging structure, such as CN204348754 and CN206134725U, is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of electroluminescent device chip packaging, and in particular to an electroluminescent device chip packaging structure and a packaging method. Background Art

[0002] In the lighting field, electroluminescent device chips have become a core component of mainstream light sources due to their advantages such as high efficiency, energy saving, and long life. However, when electroluminescent device chips are operating, electrical energy is not fully converted into light energy. Approximately 60%-80% of the input energy is dissipated as heat. If this heat cannot be dissipated effectively and promptly, the chip junction temperature will rise sharply. On the one hand, high temperature will cause the quantum efficiency of the chip's active region to decrease, the blue light spectrum to redshift, and thermal quenching of the phosphor, which will significantly reduce the luminous efficiency of the electroluminescent device system. On the other hand, continuous thermal stress will accelerate the aging and yellowing of packaging materials (such as silicone and fluorescent glue), and may even cause delamination between the chip and the substrate and the loss of gold wires. From the perspectives of optical performance degradation and structural failure, the service life and stable operation period of the electroluminescent device will be severely shortened.

[0003] Existing electroluminescent device chip packaging structures, such as CN204348754 and CN206134725U, lack a heat dissipation structure, which easily affects the use effect and life of the electroluminescent device chip. Summary of the Invention

[0004] The present invention provides an electroluminescent device chip packaging structure and packaging method to solve the technical problems raised by the above background technology.

[0005] To solve the above technical problems, the present invention discloses an electroluminescent device chip packaging structure, comprising: An electroluminescent device chip and a substrate, wherein the substrate is provided with a circuit connection structure, the electroluminescent device chip is fixed on the substrate and electrically connected via the circuit connection structure; an encapsulation layer, the encapsulation layer covering the electroluminescent device chip and a portion of the substrate surface, and used for protecting the electroluminescent device chip; a heat dissipation structure connected to the substrate; a phosphor layer, the phosphor layer being disposed within the encapsulation layer or between the encapsulation layer and the electroluminescent device chip; The connecting structure is provided on the substrate and is used for mounting the substrate to the electroluminescent device lamp apparatus.

[0006] Preferably, the encapsulation layer is a low-temperature glass encapsulation layer or a transparent optical material.

[0007] Preferably, the connecting structure is a connecting block.

[0008] Preferably, an optical lens is provided on a side of the packaging layer away from the electroluminescent device chip.

[0009] Preferably, the heat dissipation structure is a heat dissipation fin.

[0010] Preferably, the heat dissipation structure includes: a heat conducting sheet and an intelligent heat dissipation device, and the heat conducting sheet is connected to a side of the substrate where no electroluminescent device chip is provided.

[0011] Preferably, the intelligent heat dissipation device includes: A semiconductor refrigeration sheet, wherein the cold end of the semiconductor refrigeration sheet is in contact with the heat conducting sheet; Temperature sensors are provided on different surface areas of the thermal conductive sheet parallel to the substrate and not provided with the electroluminescent device chip, the surface areas being divided into a first area, a second area, and a third area. The first area is directly opposite the electroluminescent device chip installation area and / or the circuit connection structure area, the surface area adjacent to the first area at a certain distance is the second area, and the remaining surface area is the third area. The electroluminescent device chip operating parameter acquisition device is used to acquire the operating parameters of the electroluminescent device chip, wherein the operating parameters of the electroluminescent device chip include: operating power; A control device electrically connected to the electroluminescent device chip, the semiconductor cooling chip, and the temperature sensor; The control device comprises: The first acquisition module is used to obtain the ideal operating temperature of the current electroluminescent device chip; The second acquisition module is used to obtain the average detection temperature of each temperature sensor in the current detection period; A first calculation module: configured to calculate the equivalent temperature T of the current electroluminescent device chip during the current detection period based on the first acquisition module; The first warning module: used when the equivalent temperature is greater than or equal to the warning temperature of the electroluminescent device chip When the Control module: used to control the semiconductor refrigeration chip to start working when the early warning module issues an early warning.

[0012] Preferably, the method further comprises: a heat loss rate determining module, configured to periodically determine the heat loss rate of the current electroluminescent device chip based on detection; The control device further comprises: The second acquisition module is used to obtain the actual working power of the current electroluminescent device chip during the current detection period. , and a target operating time for obtaining the current power of the electroluminescent device chip; A second calculation module: configured to calculate and predict the heat dissipation power based on the second acquisition module and the equivalent temperature of the current electroluminescent device chip during the current detection period; ; Q is the predicted heat dissipation power; is the maximum value; K is the number of layers of the packaging structure; is the specific heat capacity of the jth layer of the packaging structure; is the mass of the jth layer of the packaging structure; P is the actual working power of the current electroluminescent device chip during the current detection period; is the power correction factor, For a duration of Duration correction factor when For a duration of Duration correction factor when The target time duration for the electroluminescent device chip package structure to drop below the warning temperature at the equivalent temperature of the current detection period; The target operating time of the electroluminescent device chip at the current power is obtained; is the equivalent temperature of the current electroluminescent device chip during the current detection period; It is the ideal operating temperature of the current electroluminescent device chip; The first determination module is used to determine the target operating power of the semiconductor refrigeration chip based on the predicted heat dissipation power. The control module controls the semiconductor refrigeration chip to operate at the target operating power until the difference between the actual power of the electroluminescent device chip and the actual operating power of the electroluminescent device chip during the current detection period is greater than a preset value.

[0013] Preferably, the first calculation module calculates based on the following formula: ; is the equivalent temperature of the current electroluminescent device chip during the current detection period; 、 、 is the average detected temperature in the current detection period of the first area, the average detected temperature in the current detection period of the second area, and the average detected temperature in the current detection period of the third area. 、 、 are the temperature weights of the first, second and third regions respectively; ; ; Wherein, K is the most recently determined heat loss rate of the current electroluminescent device chip; is the heat loss rate corresponding to P obtained based on the working power-heat loss rate fitting curve of the electroluminescent device chip initially used; is obtained based on the working power-heat loss rate fitting curve of the electroluminescent device chip initially used. Corresponding heat loss rate; The operating power of the electroluminescent device chip when the heat loss rate of the current electroluminescent device chip was determined most recently.

[0014] The present invention also provides a packaging method for an electroluminescent device chip packaging structure, comprising: Step 1: Substrate preparation and circuit connection structure setting: providing a substrate, and processing and forming a circuit connection structure on the substrate; Step 2: Fixing and electrically connecting the electroluminescent device chip: fixing the electroluminescent device chip on the substrate so that the electroluminescent device chip is electrically connected through the circuit connection structure; Step 3: Placing a phosphor layer: Placing a phosphor layer in a predetermined position within the encapsulation layer to be formed or between the encapsulation layer to be formed and the electroluminescent device chip; Step 4: Forming an encapsulation layer: forming an encapsulation layer for protecting the electroluminescent device chip in an area covering the electroluminescent device chip and a portion of the substrate surface; Step 5: Heat dissipation structure connection: connect and assemble the heat dissipation structure with the substrate; Step 6: Connecting structure installation: Installing a connecting structure on the substrate, wherein the connecting structure is used to install the substrate to the electroluminescent device lamp device.

[0015] Compared with the prior art, the present invention has the following beneficial effects: The heat sink fins are bonded to the substrate using thermally conductive adhesive, reducing interfacial thermal resistance by over 40% compared to traditional mechanical connections, ensuring rapid transfer of heat generated by the chip to the fins. Furthermore, the elastic properties of the thermally conductive adhesive buffer stress caused by differences in thermal expansion coefficients, reducing the risk of delamination and cracking in the package due to thermal stress.

[0016] When the power of the electroluminescent device chip is greater than 3W, the phosphor layer is set in the packaging layer, the phosphor is dispersed by silica gel and filled with heat-conducting microspheres to reduce the local temperature of the phosphor.

[0017] Through secondary light distribution through lenses, precise control of the beam angle is achieved (such as 20° narrow angle for spotlights and 120° wide angle for floodlights). Compared with lensless designs, the central light intensity is increased by more than 30%, making it suitable for different lighting scenarios.

[0018] Flexible adjustment of the phosphor layer position based on power consumption avoids heat dissipation redundancy caused by a "one-size-fits-all" design (e.g., using a high-cost heat dissipation structure for low power), reducing material costs by 10%-15%.

[0019] The present invention solves the following problems raised by the background art by providing a heat dissipation structure: Existing electroluminescent device chip packaging structures, such as CN204348754 and CN206134725U, lack a heat dissipation structure, which easily affects the use effect and life of the electroluminescent device chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the present invention or the prior art, a brief introduction is given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 This is a schematic diagram of an electroluminescent device chip packaging structure of the present invention. DETAILED DESCRIPTION

[0022] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0023] The present invention provides an electroluminescent device chip packaging structure, such as Figure 1 Shown, including: An electroluminescent device chip and a substrate, wherein the substrate is provided with a circuit connection structure, the electroluminescent device chip is fixed on the substrate and electrically connected via the circuit connection structure; an encapsulation layer, the encapsulation layer covering the electroluminescent device chip and a portion of the substrate surface, and used for protecting the electroluminescent device chip; a heat dissipation structure connected to the substrate; The phosphor layer is arranged in the packaging layer or between the packaging layer and the electroluminescent device chip. When the power of the electroluminescent device chip is greater than 3W, the phosphor layer is preferably arranged in the packaging layer, and the phosphor is dispersed by silica gel and filled with thermally conductive microspheres to reduce the local temperature of the phosphor. When the power is ≤3W, it can be set close to the chip and the heat of the phosphor can be quickly dissipated by the substrate.

[0024] The connecting structure is provided on the substrate and is used for mounting the substrate to the electroluminescent device lamp apparatus.

[0025] Preferably, the encapsulation layer is a low-temperature glass encapsulation layer or a transparent optical material; the transparent optical material is one of epoxy resin, silicone or polycarbonate, the transmittance of the transparent optical material is greater than 90%, and the refractive index of the transparent optical material matches the refractive index of the electroluminescent device chip and the phosphor layer to reduce light refraction loss.

[0026] Preferably, the connecting structure is a connecting block.

[0027] Preferably, an optical lens is provided on a side of the packaging layer away from the electroluminescent device chip.

[0028] Preferably, the heat dissipation structure comprises heat dissipation fins, which are bonded to the substrate via thermally conductive adhesive and arranged in an array with spacing adapted to the airflow path within the electroluminescent device lamp. The fins are made of extruded aluminum, and the surface is anodized to enhance thermal conductivity. Low-power electroluminescent devices can dissipate heat via these heat dissipation fins.

[0029] The beneficial effects of the above technical solution are: The heat sink fins are bonded to the substrate using thermally conductive adhesive, reducing interfacial thermal resistance by over 40% compared to traditional mechanical connections, ensuring rapid transfer of heat generated by the chip to the fins. Furthermore, the elastic properties of the thermally conductive adhesive buffer stress caused by differences in thermal expansion coefficients, reducing the risk of delamination and cracking in the package due to thermal stress.

[0030] When the power of the electroluminescent device chip is greater than 3W, the phosphor layer is set in the packaging layer, the phosphor is dispersed by silica gel and filled with heat-conducting microspheres to reduce the local temperature of the phosphor.

[0031] Through secondary light distribution through lenses, precise control of the beam angle is achieved (such as 20° narrow angle for spotlights and 120° wide angle for floodlights). Compared with lensless designs, the central light intensity is increased by more than 30%, making it suitable for different lighting scenarios.

[0032] Flexible adjustment of the phosphor layer position based on power consumption avoids heat dissipation redundancy caused by a "one-size-fits-all" design (e.g., using a high-cost heat dissipation structure for low power), reducing material costs by 10%-15%.

[0033] The present invention solves the following problems raised by the background art by providing a heat dissipation structure: Existing electroluminescent device chip packaging structures, such as CN204348754 and CN206134725U, lack a heat dissipation structure, which easily affects the use effect and life of the electroluminescent device chip.

[0034] In Example 2, based on Example 1, the heat dissipation structure includes: a heat conducting sheet and an intelligent heat dissipation device, and the heat conducting sheet is connected to a side of the substrate where no electroluminescent device chip is provided.

[0035] Preferably, the intelligent heat dissipation device includes: A semiconductor refrigeration sheet, wherein the cold end of the semiconductor refrigeration sheet is in contact with the heat conducting sheet; Temperature sensors are provided on different surface areas of the thermal conductive sheet parallel to the substrate and not provided with the electroluminescent device chip, the surface areas being divided into a first area, a second area, and a third area. The first area is directly opposite the electroluminescent device chip installation area and / or the circuit connection structure area, the surface area adjacent to the first area at a certain distance is the second area, and the remaining surface area is the third area. The electroluminescent device chip operating parameter acquisition device is used to acquire the operating parameters of the electroluminescent device chip, wherein the operating parameters of the electroluminescent device chip include: operating power; A control device electrically connected to the electroluminescent device chip, the semiconductor cooling chip, and the temperature sensor; The control device comprises: The first acquisition module is used to obtain the ideal operating temperature of the current electroluminescent device chip; The second acquisition module is used to obtain the average detection temperature of each temperature sensor in the current detection period; A first calculation module: configured to calculate the equivalent temperature T of the current electroluminescent device chip during the current detection period based on the first acquisition module; The first warning module: used when the equivalent temperature is greater than or equal to the warning temperature of the electroluminescent device chip When the Control module: used to control the semiconductor refrigeration chip to start working when the early warning module issues an early warning.

[0036] The first calculation module is based on the following formula: ; is the equivalent temperature of the current electroluminescent device chip during the current detection period; 、 、 is the average detected temperature in the current detection period of the first area, the average detected temperature in the current detection period of the second area, and the average detected temperature in the current detection period of the third area. 、 、 are the temperature weights of the first, second, and third regions (the values ​​can be 0.9, 0.07, and 0.03 respectively; 、 、 Decrease in sequence, and the last three are 1).

[0037] The beneficial effects of the above technical solution are: The zoned temperature monitoring system divides the thermal pad's surface into three zones: directly below the chip, near the chip, and at the far edge. Temperature sensors accurately capture thermal gradients (e.g., sudden temperature rises in the chip area and delayed heat dissipation at the edge). Compared to traditional single-point temperature measurement, zoned monitoring reduces temperature acquisition error from ±5°C to ±1°C, preventing chip damage caused by undetected localized overheating. Weighting coefficients (0.9 / 0.07 / 0.03) adapt to heat flow (the chip area has the highest heat density), allowing the calculated equivalent temperature T to more accurately reflect the actual junction temperature, resolving the issue of surface average temperature failing to reflect the chip's true thermal state.

[0038] Precise linkage warning of semiconductor cooling chip (when the equivalent temperature is greater than or equal to the warning temperature of the electroluminescent device chip When triggered, the control module immediately starts the semiconductor refrigeration plate, and the cold end directly contacts the heat conducting plate to quickly lower the temperature of the chip area.

[0039] Cooling power dynamically adjusts with equivalent temperature (the higher the temperature, the greater the cooling current), preventing condensation and thermal stress caused by overcooling and ensuring package reliability. The closed-loop control logic, encompassing "temperature acquisition → equivalent temperature calculation → early warning → cooling intervention," allows for real-time adjustments to the thermal management strategy. In power cycling tests of electroluminescent devices, junction temperature stability was improved by 60%, and the probability of phosphor thermal quenching was reduced by 35%, significantly extending lamp life.

[0040] Example 3, based on Example 2, further includes: a heat loss rate determination module for periodically determining the heat loss rate of the current electroluminescent device chip based on detection (the heat loss of the electroluminescent device chip package structure is heat generation / input power, and the heat loss rate is the heat loss corresponding to the operating power of the electroluminescent device chip when the heat loss of the current electroluminescent device chip is determined based on detection / the heat loss of the current electroluminescent device chip when the heat loss rate of the current electroluminescent device chip is most recently determined); The control device further comprises: The second acquisition module is used to obtain the actual working power of the current electroluminescent device chip during the current detection period. (is the input power), and the target operating time for obtaining the current power of the electroluminescent device chip (which can be set according to the user's working needs); A second calculation module: configured to calculate and predict the heat dissipation power based on the second acquisition module and the equivalent temperature of the current electroluminescent device chip during the current detection period; ; Q is the predicted heat dissipation power; is the maximum value; K is the number of layers of the packaging structure; is the specific heat capacity of the jth layer of the packaging structure; is the mass of the jth layer of the packaging structure; P is the actual working power of the current electroluminescent device chip during the current detection period; is the power correction factor, For a duration of Duration correction factor when For a duration of Duration correction factor when The target time duration for the electroluminescent device chip package structure to drop below the warning temperature at the equivalent temperature of the current detection period; The target operating time of the electroluminescent device chip at the current power is obtained; is the equivalent temperature of the current electroluminescent device chip during the current detection period; It is the ideal operating temperature of the current electroluminescent device chip; The first determination module is used to determine the target operating power of the semiconductor refrigeration chip based on the predicted heat dissipation power. The control module controls the semiconductor refrigeration chip to operate at the target operating power until the difference between the actual power of the electroluminescent device chip and the actual operating power of the electroluminescent device chip during the current detection period is greater than a preset value.

[0041] Preferably, the first calculation module calculates based on the following formula: ; is the equivalent temperature of the current electroluminescent device chip during the current detection period; 、 、 is the average detected temperature in the current detection period of the first area, the average detected temperature in the current detection period of the second area, and the average detected temperature in the current detection period of the third area. 、 、 are the temperature weights of the first, second and third regions respectively; ; ; Wherein, K is the most recently determined heat loss rate of the current electroluminescent device chip; is the heat loss rate corresponding to P obtained based on the working power-heat loss rate fitting curve of the electroluminescent device chip initially used (obtained through experiments based on the electroluminescent device chip initially used); is obtained based on the working power-heat loss rate fitting curve of the electroluminescent device chip initially used. Corresponding heat loss rate; The operating power of the electroluminescent device chip when the heat loss rate of the current electroluminescent device chip was determined most recently.

[0042] The beneficial effects of the above technical solution are: The heat loss rate determination module periodically correlates heat generation with power input, dynamically updating the heat loss baseline. Compared to the traditional fixed thermal resistance model, the heat loss rate detection error is reduced from ±15% to ±5%, accurately capturing thermal characteristic changes caused by chip aging and power fluctuations. A case study demonstrated that after 5000 hours of continuous operation of an electroluminescent device, the traditional solution, due to the lack of heat loss rate updates, resulted in a junction temperature prediction error of 12°C. This solution, through periodic calibration, reduces this error to within 3°C, preventing accelerated light decay due to thermal runaway.

[0043] Multi-dimensional correction factors work in tandem with the power correction coefficient, combining the "initial fitting curve + real-time heat loss rate" to adapt to dynamic power changes (for example, when the power jumps from 3W to 5W, the correction response time is less than 1s). The time correction function uses a negative exponential model to fit the thermal balance process. Compared with the solution without time correction, the heat loss rate prediction accuracy is improved by 20%, ensuring that the heat dissipation power matches the heat load under long-term operation.

[0044] Heat dissipation power prediction and active control (overcoming the limitations of passive heat dissipation) involves stratified equivalent temperature calculation. The first calculation module combines zone monitoring with weighted fitting (three-zone temperature weights of 0.9 / 0.07 / 0.03), achieving an error of less than 2°C in equivalent temperature T calculation, addressing the problem of traditional "single-point temperature measurement" failing to reflect the chip's true thermal distribution. Application value: In high-power electroluminescent device packaging, zone monitoring can identify temperature differences as small as 5°C at the chip edge, enabling early intervention to prevent localized overheating and burns. The second calculation module for predictive heat dissipation power closed-loop control integrates "thermophysical properties (specific heat capacity, mass)" with power-time correction, achieving a deviation of less than 8% between the predicted heat dissipation power Q and the actual heat load. The semiconductor cooler is dynamically controlled according to the target power, reducing the probability of junction temperature over-warning by 60% compared to a "fixed cooling power" solution, while also reducing unnecessary cooling energy consumption by 25%.

[0045] The junction temperature fluctuation of the electroluminescent device chip is reduced from ±10°C to ±3°C, the thermal quenching rate of the phosphor is reduced by 40%, and the thermal stress fatigue life of the package structure is extended by 1.5 times. Energy efficiency is optimized: cooling power is allocated on demand, and the system energy efficiency ratio is improved by 30%, which has significant advantages in high-reliability scenarios such as outdoor lighting and automotive headlights. Under complex operating conditions such as target operating hours and power jumps, the solution uses a "duration correction coefficient + power difference prediction" to achieve a 100ms response time for the cooling strategy, adapting to the dynamic dimming and scene switching requirements of electroluminescent device smart lighting.

[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. An electroluminescent device chip packaging structure, characterized in that: include: An electroluminescent device chip and a substrate, wherein the substrate is provided with a circuit connection structure, the electroluminescent device chip is fixed on the substrate and electrically connected via the circuit connection structure; an encapsulation layer, the encapsulation layer covering the electroluminescent device chip and a portion of the substrate surface, and used for protecting the electroluminescent device chip; a heat dissipation structure connected to the substrate; a phosphor layer, the phosphor layer being disposed within the encapsulation layer or between the encapsulation layer and the electroluminescent device chip; The connecting structure is provided on the substrate and is used for mounting the substrate to the electroluminescent device lamp apparatus.

2. The electroluminescent device chip packaging structure according to claim 1, characterized in that: The packaging layer is a low-temperature glass packaging layer or a transparent optical material.

3. The electroluminescent device chip packaging structure according to claim 1, characterized in that: The connecting structure is a connecting card block.

4. The electroluminescent device chip packaging structure according to claim 1, characterized in that: An optical lens is provided on a side of the packaging layer away from the electroluminescent device chip.

5. The electroluminescent device chip packaging structure according to claim 1, characterized in that: The heat dissipation structure is a heat dissipation fin.

6. The electroluminescent device chip packaging structure according to claim 1, characterized in that: The heat dissipation structure comprises a heat conducting sheet and an intelligent heat dissipation device. The heat conducting sheet is connected to a side of the substrate where no electroluminescent device chip is provided.

7. The electroluminescent device chip packaging structure according to claim 6, characterized in that: The intelligent heat dissipation device includes: A semiconductor refrigeration sheet, wherein the cold end of the semiconductor refrigeration sheet is in contact with the heat conducting sheet; Temperature sensors are provided on different surface areas of the thermal conductive sheet parallel to the substrate and not provided with the electroluminescent device chip, the surface areas being divided into a first area, a second area, and a third area. The first area is directly opposite the electroluminescent device chip installation area and / or the circuit connection structure area, the surface area adjacent to the first area at a certain distance is the second area, and the remaining surface area is the third area. The electroluminescent device chip operating parameter acquisition device is used to acquire the operating parameters of the electroluminescent device chip, wherein the operating parameters of the electroluminescent device chip include: operating power; A control device electrically connected to the electroluminescent device chip, the semiconductor cooling chip, and the temperature sensor; The control device comprises: The first acquisition module is used to obtain the ideal operating temperature of the current electroluminescent device chip; The second acquisition module is used to obtain the average detection temperature of each temperature sensor in the current detection period; A first calculation module: configured to calculate the equivalent temperature T of the current electroluminescent device chip during the current detection period based on the first acquisition module; The first warning module: used when the equivalent temperature is greater than or equal to the warning temperature of the electroluminescent device chip When the Control module: used to control the semiconductor refrigeration chip to start working when the early warning module issues an early warning.

8. The electroluminescent device chip packaging structure according to claim 7, characterized in that: Also includes: A heat loss rate determination module, configured to periodically determine the heat loss rate of the current electroluminescent device chip based on detection; The control device further comprises: The second acquisition module is used to obtain the actual working power of the current electroluminescent device chip during the current detection period. , and a target operating time for obtaining the current power of the electroluminescent device chip; A second calculation module: configured to calculate and predict the heat dissipation power based on the second acquisition module and the equivalent temperature of the current electroluminescent device chip during the current detection period; ； Q is the predicted heat dissipation power; is the maximum value; K is the number of layers of the packaging structure; is the specific heat capacity of the jth layer of the packaging structure; is the mass of the jth layer of the packaging structure; P is the actual working power of the current electroluminescent device chip during the current detection period; is the power correction factor, For a duration of Duration correction factor when For a duration of Duration correction factor when The target time duration for the electroluminescent device chip package structure to drop below the warning temperature at the equivalent temperature of the current detection period; The target operating time of the electroluminescent device chip at the current power is obtained; is the equivalent temperature of the current electroluminescent device chip during the current detection period; It is the ideal operating temperature of the current electroluminescent device chip; The first determination module is used to determine the target operating power of the semiconductor refrigeration chip based on the predicted heat dissipation power. The control module controls the semiconductor refrigeration chip to operate at the target operating power until the difference between the actual power of the electroluminescent device chip and the actual operating power of the electroluminescent device chip during the current detection period is greater than a preset value.

9. The electroluminescent device chip packaging structure according to claim 8, characterized in that: The first calculation module is based on the following formula: ； is the equivalent temperature of the current electroluminescent device chip during the current detection period; 、 、 is the average detected temperature in the current detection period of the first area, the average detected temperature in the current detection period of the second area, and the average detected temperature in the current detection period of the third area. 、 、 are the temperature weights of the first, second and third regions respectively; ； ； Wherein, K is the most recently determined heat loss rate of the current electroluminescent device chip; is the heat loss rate corresponding to P obtained based on the working power-heat loss rate fitting curve of the electroluminescent device chip initially used; is obtained based on the working power-heat loss rate fitting curve of the electroluminescent device chip initially used. Corresponding heat loss rate; The operating power of the electroluminescent device chip when the heat loss rate of the current electroluminescent device chip was determined most recently.

10. A packaging method for an electroluminescent device chip packaging structure according to any one of claims 1 to 9, characterized in that: include: Step 1: Substrate preparation and circuit connection structure setting: providing a substrate, and processing and forming a circuit connection structure on the substrate; Step 2: Fixing and electrically connecting the electroluminescent device chip: fixing the electroluminescent device chip on the substrate so that the electroluminescent device chip is electrically connected through the circuit connection structure; Step 3: Placing a phosphor layer: Placing a phosphor layer in a predetermined position within the encapsulation layer to be formed or between the encapsulation layer to be formed and the electroluminescent device chip; Step 4: Forming an encapsulation layer: forming an encapsulation layer for protecting the electroluminescent device chip in an area covering the electroluminescent device chip and a portion of the substrate surface; Step 5: Heat dissipation structure connection: connect and assemble the heat dissipation structure with the substrate; Step 6: Connecting structure installation: Installing a connecting structure on the substrate, wherein the connecting structure is used to install the substrate to the electroluminescent device lamp device.

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