Method for manufacturing display device and electronic device

Abstract

The invention discloses a method for manufacturing a display device and an electronic device. The method comprises the following steps: loading a substrate; forming a light emitting element layer on the substrate; forming a capping layer on the light emitting element layer; forming a first encapsulation film on the capping layer; forming a thin film encapsulation layer by forming a second encapsulation film and a third encapsulation film on the first encapsulation film; attaching a polarizer on the thin film encapsulation layer; and measuring a first optical characteristic of the light emitting element layer prior to forming the capping layer, where measuring the first optical characteristic includes measuring and determining a white angle difference (WAD) distribution of the light emitting element layer to transmit a feed-forward signal in order to adjust a thickness of the first encapsulation film.

Description

Technical Field

[0001] Aspects of some embodiments of the present disclosure relate to a display device and a method for manufacturing the display device. Background Art

[0002] As the information-oriented society develops, various demands for display devices are increasing. For example, display devices are being adopted by a variety of electronic devices such as smartphones, digital cameras, laptop computers, navigation devices, and smart TVs.

[0003] The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, and a light-emitting display device. Light-emitting display devices include, for example, organic light-emitting display devices including organic light-emitting elements, inorganic light-emitting display devices including inorganic light-emitting elements such as inorganic semiconductors, and micro light-emitting display devices including micro light-emitting elements.

[0004] An organic light-emitting element may include two opposing electrodes and a light-emitting layer interposed between the two electrodes. Electrons and holes supplied from the two electrodes recombine in the light-emitting layer to generate excitons, and the generated excitons relax from an excited state to a ground state, thereby emitting light.

[0005] Organic light-emitting display devices including organic light-emitting elements do not require a separate light source such as a backlight unit, and therefore consume less power and can be made thin and light. In addition, they can exhibit high-quality characteristics such as a wide viewing angle, high brightness and contrast, and a fast response speed. Accordingly, organic light-emitting display devices are attracting much attention as next-generation display devices.

[0006] The above information disclosed in this Background section is only for enhancement of understanding of the background and therefore, the information discussed in this Background section does not necessarily constitute prior art. Summary of the Invention

[0007] Aspects of some embodiments of the present disclosure include a method for manufacturing a display device capable of relatively improving display quality.

[0008] It should be noted that the characteristics of each embodiment according to the present disclosure are not limited to the above-mentioned characteristics; and other characteristics of each embodiment according to the present disclosure will be obvious to those skilled in the art through the following description.

[0009] According to some embodiments of the present disclosure, a method for manufacturing a display device includes: loading a substrate; forming a light-emitting element layer on the substrate; forming a capping layer on the light-emitting element layer; forming a first packaging film on the capping layer; forming a thin film packaging layer by forming a second packaging film and a third packaging film on the first packaging film; attaching a polarizer on the thin film packaging layer; and measuring a first optical characteristic of the light-emitting element layer before forming the capping layer, wherein measuring the first optical characteristic includes measuring and determining a white angle difference (WAD) distribution of the light-emitting element layer to send a feedforward signal so as to adjust the thickness of the first packaging film.

[0010] According to some embodiments, loading the substrate includes loading the substrate having the plurality of pixel electrodes formed thereon into a deposition device.

[0011] According to some embodiments, forming the light emitting element layer includes: forming a light emitting layer on the pixel electrode; and forming a common electrode on the light emitting layer.

[0012] According to some embodiments, measuring the first optical characteristic includes measuring a WAD distribution of white light of the light emitting element layer.

[0013] According to some embodiments, measuring the first optical characteristic includes: determining whether a WAD distribution falls within a normal specification range; and sending a feedforward signal to adjust a thickness of the first packaging film if the WAD distribution is determined not to fall within the normal specification range.

[0014] According to some embodiments, if it is determined that the WAD distribution partially deviates from the normal specification range to a specific color region, the thickness of the first packaging film is adjusted to move the WAD distribution to the normal specification range.

[0015] According to some embodiments, adjusting the thickness of the first packaging film includes increasing or decreasing the thickness of the first packaging film.

[0016] According to some embodiments, measuring the first optical characteristic includes measuring a WAD distribution using a spectrometer.

[0017] According to some embodiments, the method further includes measuring a thickness of a light-emitting element layer before forming the capping layer, wherein the light-emitting element layer includes a light-emitting layer including a first functional layer, an organic light-emitting layer, and a second functional layer.

[0018] According to some embodiments, measuring the thickness of the light-emitting element layer includes: measuring the thickness of each of the first functional layer, the organic light-emitting layer, and the second functional layer; and comparing the input thickness with the actually formed thickness to send a feedback signal to form the light-emitting element layer.

[0019] According to some embodiments, the method further includes measuring a second optical characteristic of the light emitting element layer and measuring an optical characteristic of the polarizer between forming the thin film encapsulation layer and attaching the polarizer.

[0020] According to some embodiments, measuring the second optical characteristic includes measuring a WAD distribution of white light of the light-emitting element layer.

[0021] According to some embodiments, if it is determined that the WAD distribution partially deviates from the normal specification range to a specific color region, the method further selects from among a plurality of prepared polarizers in measuring optical properties of the polarizer so as to move the WAD distribution to the normal specification range.

[0022] According to some embodiments, a polarizer is selected from among a plurality of prepared polarizers by considering color coordinates and chromaticity deviation.

[0023] According to some embodiments of the present disclosure, a method for manufacturing a display device includes: loading a substrate; forming a light-emitting element layer on the substrate; forming a capping layer on the light-emitting element layer; forming a thin film encapsulation layer on the capping layer; attaching a polarizer on the thin film encapsulation layer; and measuring the optical properties of the light-emitting element layer and measuring the optical properties of the polarizer between forming the thin film encapsulation layer and attaching the polarizer, wherein measuring the optical properties of the light-emitting element layer includes measuring and determining the WAD distribution of the light-emitting element layer to send a feedforward signal for selection from a plurality of prepared polarizers.

[0024] According to some embodiments, measuring the optical characteristics of the light emitting element layer includes measuring a WAD distribution of white light of the light emitting element layer.

[0025] According to some embodiments, if it is determined that the WAD distribution partially deviates from the normal specification range to a specific color region, the method further selects from among a plurality of prepared polarizers to move the WAD distribution to the normal specification range.

[0026] According to some embodiments, in measuring the optical characteristics of the polarizer, a polarizer is selected from among a plurality of prepared polarizers by considering color coordinates and chromaticity deviation.

[0027] According to some embodiments, the method further includes: measuring a thickness of a thin film encapsulation layer before attaching the polarizer, wherein the thin film encapsulation layer includes a first encapsulation film, a second encapsulation film, and a third encapsulation film.

[0028] According to some embodiments, measuring the thickness of the thin film encapsulation layer includes: measuring the thickness of each of the first encapsulation film, the second encapsulation film, and the third encapsulation film; and comparing the input thickness with the actually formed thickness to send a feedback signal to form the thin film encapsulation layer.

[0029] According to some embodiments of the present disclosure, an electronic device may include: a display device manufactured by the above method, configured to provide an image; a processor, configured to provide an image data signal to the display device; a memory, configured to store data information for operation; and a power module, configured to generate power.

[0030] According to some embodiments of the present disclosure, a method for manufacturing a display device may include: measuring the WAD distribution after manufacturing a light-emitting element layer; and adjusting the thickness of a first encapsulation film or a polarizer by sending a feedforward signal. Accordingly, by adjusting the WAD distribution of the display device, chromatic aberration depending on viewing angle can be reduced, thereby relatively improving display quality.

[0031] It should be noted that the characteristics of the embodiments according to the present disclosure are not limited to those described above, and other characteristics of the embodiments according to the present disclosure will be apparent to those skilled in the art through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other aspects and features according to embodiments of the present disclosure will become more apparent by describing aspects of some embodiments of the present disclosure in more detail with reference to the accompanying drawings.

[0033] Figure 1 is a plan view of an electronic device according to some embodiments of the present disclosure.

[0034] Figure 2 is a perspective view illustrating a display device included in an electronic device according to some embodiments of the present disclosure.

[0035] Figure 3 Seen from the side Figure 2 sectional view of a display device.

[0036] Figure 4 is a plan view illustrating a display layer of a display device according to some embodiments of the present disclosure.

[0037] Figure 5 is a cross-sectional view illustrating a portion of a display device according to some embodiments of the present disclosure.

[0038] Figure 6 is a flowchart for illustrating a method for manufacturing a display device according to some embodiments of the present disclosure.

[0039] Figure 7 and Figure 8 are cross-sectional views illustrating processing operations of a method for manufacturing a display device according to some embodiments of the present disclosure.

[0040] Figure 9is a flowchart for illustrating a method for manufacturing a display device according to some embodiments of the present disclosure.

[0041] Figure 10 are cross-sectional views for illustrating processing operations of a method for manufacturing a display device according to some embodiments of the present disclosure.

[0042] Figure 11 is a flowchart for illustrating a method for manufacturing a display device according to some embodiments of the present disclosure.

[0043] Figure 12 is an xy color coordinate system showing the white angle difference (WAD) distribution of the display device before improvement.

[0044] Figure 13 is an xy color coordinate system showing the WAD distribution of the improved display device.

[0045] Figure 14 is a block diagram of an electronic device according to one embodiment of the present disclosure.

[0046] Figure 15 is a schematic diagram of an electronic device according to various embodiments of the present disclosure. DETAILED DESCRIPTION

[0047] Various aspects of some embodiments of the present invention will now be more fully described below with reference to the accompanying drawings in which various aspects of some embodiments of the present invention are shown. However, the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the embodiments according to the present disclosure to those skilled in the art.

[0048] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0049] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first element discussed below may be referred to as the second element without departing from the teachings of the present invention. Similarly, the second element may also be referred to as the first element.

[0050] Each of the features of the various embodiments of the present disclosure can be combined with each other in part or in whole, and various technical interlocks and drives are feasible. Each embodiment can be implemented independently of each other, or can be implemented together in an associated manner.

[0051] Hereinafter, aspects of some embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings.

[0052] Figure 1 is a plan view of an electronic device according to some embodiments of the present disclosure.

[0053] refer to Figure 1 , the electronic device 1 displays a moving image (e.g., a video image) or a still image (e.g., a static image). The electronic device 1 may refer to any electronic device that provides a display screen. For example, the electronic device 1 may include a television, a laptop computer, a monitor, an electronic billboard, an Internet of Things device, a mobile phone, a smartphone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display device, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a video camera, etc.

[0054] The electronic device 1 may include a display device 10 for providing a display screen (see Figure 2 Examples of the display device 10 may include an inorganic light-emitting diode display device, an organic light-emitting display device, a quantum dot light-emitting display device, a plasma display device, a field emission display device, and the like. In the following description, an organic light-emitting diode display device is used as an example of the display device 10, but the embodiments of the present disclosure are not limited thereto. Any other display device may be used as long as the technical concepts of the present disclosure can be equally applied.

[0055] The shape of the electronic device 1 can be modified in various ways. For example, the electronic device 1 can have a shape such as a rectangle with longer lateral sides, a rectangle with longer longitudinal sides, a square, a quadrilateral with rounded corners (vertices), other polygons, a circle, etc. The shape of the display area DA of the electronic device 1 can also be similar to the overall shape of the electronic device 1. Figure 1 In the example shown in , the electronic device 1 has a rectangular shape with longer sides in the second direction DR2 .

[0056] The electronic device 1 may include a display area DA and a non-display area NDA. An image may be displayed in the display area DA. No image is displayed in the non-display area NDA. The display area DA may be referred to as an active area, while the non-display area NDA may be referred to as an inactive area. The display area DA may generally occupy the center of the electronic device 1.

[0057] The display area DA may include a first display area DA1, a second display area DA2, and a third display area DA3. Components for adding various features to the electronic device 1 may be located in the second display area DA2 and the third display area DA3. In other words, the second display area DA2 and the third display area DA3 may be referred to as component areas.

[0058] Figure 2 is a perspective view illustrating a display device included in an electronic device according to some embodiments of the present disclosure.

[0059] refer to Figure 2 According to some embodiments of the present disclosure, the electronic device 1 may include a display device 10. The display device 10 may provide a display screen for displaying images in the electronic device 1. When viewed from the top, the display device 10 may have a shape similar to that of the electronic device 1. For example, the display device 10 may have a shape similar to a rectangle having a shorter side in the first direction DR1 and a longer side in the second direction DR2. The corner at which the shorter side in the first direction DR1 and the longer side in the second direction DR2 intersect may be rounded with a predetermined curvature. However, it should be understood that the embodiments of the present disclosure are not limited thereto. The corner may be formed at a right angle. When viewed from the top, the shape of the display device 10 is not limited to a quadrilateral shape, but may be formed in a shape similar to other polygonal shapes, a circular shape, or an elliptical shape.

[0060] The display device 10 may include a display panel 100 and a driver circuit (or display driver) 200 .

[0061] The display panel 100 may include a main area MA and an auxiliary area SBA.

[0062] The main area MA may include a display area DA containing pixels for displaying an image and a non-display area NDA positioned around the display area DA. The display area DA may include a first display area DA1, a second display area DA2, and a third display area DA3. The display area DA may output light from multiple emission areas or multiple opening areas. For example, the display panel 100 may include a pixel circuit including a switching element, a pixel defining layer defining the emission area or the opening area, and a self-luminous element.

[0063] For example, the self-luminous element may include but is not limited to at least one of the following: an organic light-emitting diode including an organic emission layer, a quantum dot light-emitting diode (quantum dot LED) including a quantum dot emission layer, an inorganic light-emitting diode (inorganic LED) including an inorganic semiconductor, or a micro light-emitting diode (micro LED).

[0064] The non-display area NDA may be positioned outside the display area DA (e.g., at the periphery of the display area DA or outside the footprint of the display area DA). The non-display area NDA may be defined as an edge of the main area MA of the display panel 100. The non-display area NDA may include a gate driver that applies a gate signal to a gate line and a fan-out line that connects the display driver 200 to the display area DA.

[0065] The auxiliary area SBA may extend from one side of the main area MA. The auxiliary area SBA may include a flexible material that can be bent, folded, or curled. For example, when the auxiliary area SBA is bent, the auxiliary area SBA may overlap with the main area MA in the thickness direction (third direction DR3). The auxiliary area SBA may include a pad connected to the display driver 200. According to some embodiments, the auxiliary area SBA may be removed, and the display driver 200 and the pad may be positioned in the non-display area NDA.

[0066] The display driver 200 can output signals and voltages for driving the display panel 100. The display driver 200 can supply data voltages to data lines. The display driver 200 can apply power voltages to voltage lines and can supply gate control signals to gate drivers. The display driver 200 can be implemented as an integrated circuit (IC) and can be attached to the display panel 100 by chip on glass (COG) technology, chip on plastic (COP) technology, or ultrasonic bonding. For example, the display driver 200 can be positioned in the auxiliary area SBA and can overlap with the main area MA in the thickness direction as the auxiliary area SBA is bent. As another example, the display driver 200 can be mounted on a circuit board.

[0067] In addition, the display device 10 may further include a circuit board. The circuit board may be attached to the pads of the display panel 100 using an anisotropic conductive film (ACF). The circuit board may be a flexible printed circuit board (FPCB), a rigid printed circuit board (PCB), or a flexible film such as a chip on film (COF).

[0068] Figure 3 Seen from the side Figure 2 sectional view of a display device.

[0069] refer to Figure 3 The display panel 100 may include a display layer DU and a polarizer POL. The display layer DU may include a substrate SUB, a thin film transistor layer TFTL, an emission material layer EML, and a thin film encapsulation layer TFEL.

[0070] The substrate SUB may be a base substrate or a base member. The substrate SUB may be a flexible substrate that can be bent, folded, or rolled. For example, the substrate SUB may include, but is not limited to, a polymer resin such as polyimide (PI). According to some embodiments, the substrate SUB may include a glass material or a metal material.

[0071] The thin film transistor layer TFTL may be positioned on the substrate SUB. The thin film transistor layer TFTL may include a plurality of thin film transistors that form pixel circuits of the pixels. The thin film transistor layer TFTL may include gate lines, data lines, voltage lines, gate control lines, fan-out lines for connecting the display driver 200 to the data lines, leads for connecting the display driver 200 to pads, and the like. Each thin film transistor may include a semiconductor region, a source electrode, a drain electrode, and a gate electrode. For example, when a gate driver is formed on one side of the non-display area NDA of the display panel 100, the gate driver may include a thin film transistor.

[0072] The thin film transistor layer TFTL may be positioned in the display area DA, the non-display area NDA, and the auxiliary area SBA. The thin film transistor, gate line, data line, and voltage line in each pixel of the thin film transistor layer TFTL may be positioned in the display area DA. The gate control line and fan-out line of the thin film transistor layer TFTL may be positioned in the non-display area NDA. Lead lines of the thin film transistor layer TFTL may be positioned in the auxiliary area SBA.

[0073] An emission material layer (EML) may be positioned on the thin film transistor layer (TFTL). The emission material layer (EML) may include a plurality of light-emitting elements that emit light, and a pixel-defining layer for defining pixels. Each light-emitting element includes a first electrode, a second electrode, and a light-emitting layer. The plurality of light-emitting elements in the emission material layer (EML) may be positioned in the display area (DA).

[0074] According to some embodiments of the present disclosure, the light-emitting layer may be an organic light-emitting layer comprising an organic material. The light-emitting layer may include a hole transport layer, an organic light-emitting layer, and an electron transport layer. When the first electrode receives a voltage through the thin film transistor in the thin film transistor layer TFTL and the second electrode receives a cathode voltage, holes and electrons may respectively move through the hole transport layer and the electron transport layer to the organic light-emitting layer, so that they recombine in the organic light-emitting layer to emit light.

[0075] According to some embodiments, the light emitting elements may include quantum dot light emitting diodes each including a quantum dot emission layer, inorganic light emitting diodes each including an inorganic semiconductor, or micro light emitting diodes.

[0076] The thin film encapsulation layer TFEL may cover the upper surface and side surfaces of the emission material layer EML and be able to protect the emission material layer EML. The thin film encapsulation layer TFEL may include at least one inorganic film and at least one organic film for encapsulating the emission material layer EML.

[0077] The display device 10 may further include an optical device 300. The optical device 300 may be positioned in the second display area DA2 or the third display area DA3. The optical device 300 may output or receive light in the infrared, ultraviolet, and visible light ranges. For example, the optical device 300 may be an optical sensor that senses light incident on the display device 10, such as a proximity sensor, an illuminance sensor, a camera sensor, and an image sensor.

[0078] Figure 4 is a plan view illustrating a display layer of a display device according to some embodiments of the present disclosure.

[0079] refer to Figure 4 , the display layer DU may include a display area DA and a non-display area NDA.

[0080] The display area DA may be positioned at the center of the display panel 100. In the display area DA, a plurality of pixels PX, a plurality of gate lines GL, a plurality of data lines DL, and a plurality of voltage lines VL may be positioned. Each of the plurality of pixels PX may be defined as a minimum unit of output light.

[0081] The plurality of gate lines GL may supply gate signals received from the gate driver 210 to the plurality of pixels PX. The plurality of gate lines GL may extend in a first direction DR1 and may be spaced apart from each other in a second direction DR2 intersecting the first direction DR1.

[0082] The plurality of data lines DL may supply data voltages received from the display driver 200 to the plurality of pixels PX. The plurality of data lines DL may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1.

[0083] The plurality of voltage lines VL may apply a power voltage received from the display driver 200 to the plurality of pixels PX. The power voltage may be at least one of a driving voltage, an initialization voltage, a reference voltage, and a low-level voltage. The plurality of voltage lines VL may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1.

[0084] The non-display area NDA may surround the display area DA. In the non-display area NDA, a gate driver 210, a fan-out line FOL, and a gate control line GCL may be positioned. The gate driver 210 may generate a plurality of gate signals based on the gate control signal and may sequentially supply the plurality of gate signals to the plurality of gate lines GL in a sequence (e.g., a set sequence or a predetermined sequence).

[0085] The fan-out line FOL may extend from the display driver 200 to the display area DA. The fan-out line FOL may supply a data voltage received from the display driver 200 to the plurality of data lines DL.

[0086] The gate control line GCL may extend from the display driver 200 to the gate driver 210. The gate control line GCL may supply a gate control signal received from the display driver 200 to the gate driver 210.

[0087] The auxiliary area SBA may include the display driver 200 and the pad area PA.

[0088] The display driver 200 can output signals and voltages for driving the display panel 100 to the fan-out lines FOL. The display driver 200 can supply data voltages to the data lines DL via the fan-out lines FOL. The data voltages can be applied to the plurality of pixels PX, thereby controlling the brightness of the plurality of pixels PX. The display driver 200 can supply gate control signals to the gate driver 210 via the gate control lines GCL.

[0089] The pad area PA may be positioned at an edge of the auxiliary area SBA. The pad area PA may be electrically connected to the circuit board using a material such as an anisotropic conductive film and a self-assembly anisotropic conductive adhesive (SAP).

[0090] The pad area PA may include a plurality of display pads DP. The plurality of display pads DP may be connected to a graphics system through a circuit board. The plurality of display pads DP may be connected to the circuit board to receive digital video data and may supply the digital video data to the display driver 200.

[0091] Figure 5 is a cross-sectional view illustrating a portion of a display device according to some embodiments of the present disclosure. Figure 5 It is a cross-sectional view of a portion of the display device 10 (eg, a polarizer POL and a substrate SUB, a thin film transistor layer TFTL, and an emission material layer EML of a display layer DU).

[0092] refer to Figure 5The substrate SUB may be a base substrate or a base member. The substrate SUB may be a flexible substrate that can be bent, folded, or rolled. For example, the substrate SUB may include, but is not limited to, a polymer resin such as polyimide (PI). For another example, the substrate SUB may include a glass material or a metal material.

[0093] The thin film transistor layer TFTL may include a first buffer layer BF1, a bottom metal layer BML, a second buffer layer BF2, a thin film transistor TFT, a gate insulator GI, a first interlayer dielectric layer ILD1, a capacitor electrode CPE, a second interlayer dielectric layer ILD2, a first connection electrode CNE1, a first passivation layer PAS1, a second connection electrode CNE2, and a second passivation layer PAS2.

[0094] The first buffer layer BF1 may be positioned on the substrate SUB. The first buffer layer BF1 may include an inorganic film capable of preventing air or moisture from penetrating. For example, the first buffer layer BF1 may include a plurality of inorganic films stacked on each other.

[0095] The bottom metal layer BML may be positioned on the first buffer layer BF1. For example, the bottom metal layer BML may be composed of a single layer or multiple layers of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0096] The second buffer layer BF2 may cover the first buffer layer BF1 and the bottom metal layer BML. The second buffer layer BF2 may include an inorganic film capable of preventing air or moisture from penetrating. For example, the second buffer layer BF2 may include a plurality of inorganic films stacked on each other.

[0097] The thin film transistor TFT may be positioned on the second buffer layer BF2 and may form a pixel circuit for each of the plurality of pixels. For example, the thin film transistor TFT may be a driving transistor or a switching transistor of the pixel circuit. The thin film transistor TFT may include a semiconductor layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE.

[0098] The semiconductor layer ACT may be positioned on the second buffer layer BF2. The semiconductor layer ACT may overlap the bottom metal layer BML and the gate electrode GE in the thickness direction and may be insulated from the gate electrode GE by the gate insulator GI. A portion of the semiconductor layer ACT may be made conductive to form the source electrode SE and the drain electrode DE.

[0099] The gate electrode GE may be positioned on the gate insulator GI. The gate electrode GE may overlap the semiconductor layer ACT with the gate insulator GI interposed therebetween.

[0100] The gate insulator GI may be positioned on the semiconductor layer ACT. For example, the gate insulator GI may cover the semiconductor layer ACT and the second buffer layer BF2 and insulate the semiconductor layer ACT from the gate electrode GE. The gate insulator GI may include a contact hole through which the first connection electrode CNE1 passes.

[0101] The first interlayer dielectric layer ILD1 may cover the gate electrode GE and the gate insulator GI. The first interlayer dielectric layer ILD1 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the first interlayer dielectric layer ILD1 may be connected to the contact hole of the gate insulator GI and the contact hole of the second interlayer dielectric layer ILD2.

[0102] The capacitor electrode CPE may be positioned on the first interlayer dielectric layer ILD1 , overlap the gate electrode GE in a thickness direction, and form a capacitor with the gate electrode GE.

[0103] The second interlayer dielectric layer ILD2 may cover the capacitor electrode CPE and the first interlayer dielectric layer ILD1. The second interlayer dielectric layer ILD2 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the second interlayer dielectric layer ILD2 may be connected to the contact hole of the first interlayer dielectric layer ILD1 and the contact hole of the gate insulator GI.

[0104] The first connection electrode CNE1 may be positioned on the second interlayer dielectric layer ILD2. The first connection electrode CNE1 may electrically connect the drain electrode DE of the thin film transistor TFT to the second connection electrode CNE2. The first connection electrode CNE1 may be inserted into a contact hole formed in the second interlayer dielectric layer ILD2, the first interlayer dielectric layer ILD1, and the gate insulator GI to contact the drain electrode DE of the thin film transistor TFT.

[0105] The first passivation layer PAS1 may cover the first connection electrode CNE1 and the second interlayer dielectric layer ILD2. The first passivation layer PAS1 may protect the thin film transistor TFT. The first passivation layer PAS1 may include a contact hole through which the second connection electrode CNE2 passes.

[0106] The second connection electrode CNE2 may be positioned on the first passivation layer PAS1. The second connection electrode CNE2 may electrically connect the first connection electrode CNE1 to the pixel electrode PXE of the light emitting element ED. The second connection electrode CNE2 may be inserted into a contact hole formed in the first passivation layer PAS1 to contact the first connection electrode CNE1.

[0107] The second passivation layer PAS2 may cover the second connection electrode CNE2 and the first passivation layer PAS 1. The second passivation layer PAS2 may include a contact hole through which the pixel electrode PXE of the light emitting element ED passes.

[0108] The emission material layer EML may be positioned on the thin film transistor layer TFTL. The emission material layer EML may include a light emitting element ED and a pixel defining layer PDL. The light emitting element ED may include a pixel electrode PXE, a light emitting layer 500, and a common electrode CE.

[0109] The pixel electrode PXE may be positioned on the second passivation layer PAS2. The pixel electrode PXE may be positioned in alignment with one of the openings of the pixel defining layer PDL. The pixel electrode PXE may be electrically connected to the drain electrode DE of the thin film transistor TFT through the first connection electrode CNE1 and the second connection electrode CNE2.

[0110] The pixel electrode PXE may be a reflective electrode. According to some embodiments of the present disclosure, the pixel electrode PXE may include a reflective film containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. According to some embodiments, the pixel electrode PXE may include a transparent or translucent electrode layer positioned on and / or below the reflective film. The transparent or translucent electrode layer described above may include at least one selected from the group consisting of: indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). According to some embodiments, the pixel electrode PXE may have a three-layer structure of an ITO layer, an Ag layer, and an ITO layer.

[0111] The light-emitting layer 500 may be positioned on the pixel electrode PXE. For example, the light-emitting layer 500 may be, but is not limited to, an organic light-emitting layer made of an organic material. If the light-emitting layer 500 is an organic light-emitting layer, when the thin film transistor TFT applies a voltage (e.g., a set voltage or a predetermined voltage) to the pixel electrode PXE of the light-emitting element ED and the common electrode CE of the light-emitting element ED receives a common voltage or a cathode voltage, holes and electrons may move to the light-emitting layer 500 and recombine therein to emit light.

[0112] The light emitting layer 500 may include a first functional layer 510, an organic light emitting layer 520, and a second functional layer 530. The organic light emitting layer 520 may be positioned between the first functional layer 510 and the second functional layer 530. The first functional layer 510 may be positioned below the organic light emitting layer 520 and adjacent to the pixel electrode PXE, and the second functional layer 530 may be positioned on the organic light emitting layer 520 and adjacent to the common electrode CE.

[0113] The first functional layer 510 may include, for example, a hole transport layer (HTL), or may include a hole transport layer and a hole injection layer (HIL). The second functional layer 530 is an element positioned on the organic light emitting layer 520 and may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer 530 is optional. In some embodiments, the second functional layer 530 may not be positioned.

[0114] Although the organic light-emitting layer 520 is positioned in each opening of the pixel defining layer PDL, each of the first functional layer 510 and the second functional layer 530 can be, for example, integrally formed to completely cover the display area of ​​the substrate SUB and thus completely cover a common layer of the substrate SUB, such as the common electrode CE to be described later.

[0115] The common electrode CE may be positioned on the light emitting layer 500. For example, the common electrode CE may be implemented as an electrode common to all pixels, rather than being positioned as a separate electrode for each of the pixels. The common electrode CE may be positioned on the light emitting layer 500 in the first emission area EA1, the second emission area EA2, and the third emission area EA3, and may be positioned on the pixel defining layer PDL in other areas except the first emission area EA1, the second emission area EA2, and the third emission area EA3.

[0116] The common electrode CE can receive a common voltage or a low-level voltage. When the pixel electrode PXE receives a voltage equal to the data voltage and the common electrode CAT receives a low-level voltage, a potential difference is formed between the pixel electrode PXE and the common electrode CE, so that the light emitting layer 500 can emit light.

[0117] The common electrode CE may be a semi-transparent layer of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. In some embodiments, the common electrode CE may further include a layer such as ITO, IZO, ZnO, and In2O3 on the semi-transparent layer including the materials described above. According to some embodiments of the present disclosure, the common electrode CE may include silver (Ag), magnesium (Mg), or an alloy of silver (Ag) and magnesium (Mg).

[0118] The pixel defining layer (PDL) may include a plurality of openings (OPE1, OPE2, and OPE3) and may be positioned over a portion of the second passivation layer (PAS2) and a portion of the pixel electrode (PXE). The pixel defining layer (PDL) may include a first opening (OPE1), a second opening (OPE2), and a third opening (OPE3), and each of the openings (OPE1, OPE2, and OPE3) may expose a portion of the pixel electrode (PXE). As described above, the openings (OPE1, OPE2, and OPE3) of the pixel defining layer (PDL) may define a first emission area (EA1), a second emission area (EA2), and a third emission area (EA3), respectively, which may have different areas or sizes. The pixel defining layer (PDL) may separate and insulate the pixel electrode (PXE) of one of the plurality of light-emitting elements (ED) from the pixel electrode (PXE) of another of the plurality of light-emitting elements (ED). The pixel defining layer (PDL) may include a light-absorbing material to prevent light reflection. For example, the pixel defining layer (PDL) may include a polyimide (PI)-based binder and a mixture of red, green, and blue pigments. Alternatively, the pixel defining layer (PDL) may include a cardo-based binder resin and a mixture of a lactam black pigment and a blue pigment. Alternatively, the pixel defining layer PDL may include carbon black.

[0119] The capping layer CPL may be positioned on the common electrode CE. The capping layer CPL may protect the light-emitting element ED by covering the common electrode CE. The capping layer CPL may include a stack of multiple films. The capping layer CPL may include a first capping layer CAP1 positioned on the common electrode CE and a second capping layer CAP2 positioned on the first capping layer CAP1.

[0120] The first capping layer CAP1 may be positioned between the common electrode CE and the second capping layer CAP2, and the second capping layer CAP2 may be positioned between the first capping layer CAP1 and the thin film encapsulation layer TFEL. The first capping layer CAP1 may contact the common electrode CE and the second capping layer CAP2, and the second capping layer CAP2 may contact the first capping layer CAP1 and the thin film encapsulation layer TFEL.

[0121] The capping layer CPL may include an inorganic insulating material such as LiF or an organic insulating material. For example, the first capping layer CAP1 may include an inorganic insulating material. The first capping layer CAP1 may include one or more inorganic insulating materials selected from the group consisting of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The second capping layer CAP2 may include one or more selected from the group consisting of LiF, MgF2, AlF2, NaF, and AlO x .

[0122] The thin film encapsulation layer TFEL may be positioned on the capping layer CPL. The thin film encapsulation layer TFEL may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 5 As shown in , the thin film encapsulation layer TFEL may include a first encapsulation film TFE1 positioned on the second capping layer CAP2 , a second encapsulation film TFE2 positioned on the first encapsulation film TFE1 , and a third encapsulation film TFE3 positioned on the second encapsulation film TFE2 .

[0123] The first packaging film TFE1 and the third packaging film TFE3 may include an inorganic insulating material. For example, the inorganic insulating material may include one or more selected from the group consisting of: aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. In some embodiments, the first packaging film TFE1 and the third packaging film TFE3 may include an inorganic insulating layer containing non-metallic elements, such as silicon oxide, silicon nitride, and silicon oxynitride. The number and type of non-metallic elements included in the first packaging film TFE1 may be different from the number and type of non-metallic elements included in the third packaging film TFE3. For example, the first packaging film TFE1 may include silicon nitride, and the third packaging film TFE3 may include silicon oxide. However, it should be understood that the embodiments of the present disclosure are not limited to this.

[0124] The second packaging film TFE2 can be used to release the internal stress of the first packaging film TFE1 and / or the third packaging film TFE3, or to fill the gaps created by the particles. The second packaging film TFE2 may comprise a polymer material. Such a polymer material may comprise polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), or any combination thereof.

[0125] The second encapsulation film TFE2 may be formed by coating a monomer having fluidity and then curing the monomer layer using heat or light (eg, ultraviolet rays). Alternatively, the second encapsulation film TFE2 may be formed by coating the polymer-based material described above.

[0126] The polarizer POL can be positioned on the thin film encapsulation layer TFEL. The polarizer POL can reduce the reflection of external light to improve visibility. The polarizer POL can convert natural light or polarized light into light of arbitrary polarization. For example, external light incident on the display device 10 can be converted into linearly polarized light.

[0127] The polarizer POL may be stretched in one direction. The direction in which the polarizer POL is stretched may be the absorption axis, and the direction perpendicular thereto may be the transmission axis. According to some embodiments, the transmission axis of the polarizer POL may be zero degrees.

[0128] The polarizer POL may include a polymer material primarily composed of a polyvinyl alcohol (PVA) resin containing iodine or a dichroic dye. However, it should be understood that the embodiments of the present disclosure are not limited thereto. The polarizer POL may include an O-type polarizing element in which a liquid crystal composition containing a dichroic material and a liquid crystal compound is oriented in a specific direction, or an E-type polarizing element in which a lyotropic liquid crystal is oriented in a specific direction.

[0129] The light-emitting element ED positioned at each pixel can have a different stacking structure, taking into account the wavelength or material of the light. For example, it can have a structure and thickness that take into account the microcavity distance between the two electrodes, which depends on the wavelength of the light emitted from the corresponding organic light-emitting layer. When the intensity of the light emitted from each light-emitting element increases due to the microcavity effect, the viewing angle characteristics of the display device 10 may change. For example, when the intensity of the light emitted from each light-emitting element increases due to the microcavity effect, the color shift depending on the viewing angle when the user views the display device 10 also increases, and thus the color seen by the user changes depending on the viewing angle.

[0130] Hereinafter, a method for manufacturing a display device capable of measuring optical characteristics after manufacturing a light emitting element ED and then correcting the optical characteristics will be disclosed.

[0131] Figure 6 is a flowchart illustrating a method for manufacturing a display device according to some embodiments of the present disclosure. Figure 6 Various operations in a method for manufacturing a display device are illustrated, but embodiments according to the present disclosure are not limited thereto, and according to some embodiments, unless otherwise described or implied, the method for manufacturing a display device may include additional operations or fewer operations, or the order of the operations may be changed without departing from the spirit and scope of embodiments according to the present disclosure.

[0132] Figure 7 and Figure 8are cross-sectional views illustrating processing operations of a method for manufacturing a display device according to some embodiments of the present disclosure.

[0133] refer to Figure 6 According to some embodiments, the method for manufacturing a display device may include: loading a substrate (operation S100); forming a light-emitting element layer (operation S110); forming a capping layer (operation S120); forming a first encapsulation film (operation S130); forming a second encapsulation film and a third encapsulation film (operation S140); and attaching a polarizer (operation S150). In addition, the method may include measuring optical characteristics (operation S115) and measuring a first thickness (operation S117) between forming the light-emitting element layer (operation S110) and forming the capping layer (operation S120), or may include measuring a second thickness (operation S135) between forming the first encapsulation film (operation S130) and forming the second encapsulation film and the third encapsulation film (operation S140).

[0134] Combine Figure 6 For reference Figure 7 and Figure 8 , loading substrate (operation S100) is to load the substrate SUB into the deposition equipment to form the emission material layer EML. On the substrate SUB, Figure 7 In some embodiments, the pixel electrode PXE may have a structure in which a silver (Ag) reflective film and an ITO electrode are stacked.

[0135] Subsequently, a light-emitting element layer is formed (operation S110). The light-emitting element layer formation (operation S110) may include forming a light-emitting layer 500 and a common electrode CE on the pixel electrode PXE and the pixel definition layer PDL on the loaded substrate SUB. In doing so, the first functional layer 510 and the second functional layer 530 may be commonly formed in the emission areas EA1, EA2, and EA3, and the organic light-emitting layer 520 may be formed in each of the emission areas EA1, EA2, and EA3 by being independently deposited.

[0136] According to some embodiments, the first functional layer 510 may be formed to include a hole injection layer, and the second functional layer 530 may be formed to include a buffer layer, an electron transport layer, and an electron injection layer. The organic light-emitting layer 520 may include two or more layers stacked on top of each other. For example, the organic light-emitting layer 520 emitting red light may include two layers, the organic light-emitting layer 520 emitting green light may include three layers, and the organic light-emitting layer 520 emitting blue light may include two layers. However, it will be understood that the embodiments of the present disclosure are not limited thereto.

[0137] The common electrode CE may be commonly deposited in the emission areas EA1, EA2, and EA3. Accordingly, forming the light emitting element layer (operation S110) may include forming the light emitting layer 500 and the common electrode CE to manufacture an emission material layer EML including a plurality of light emitting elements ED.

[0138] Subsequently, the optical properties of the emission material layer EML are measured (operation S115) and the first thickness of the emission material layer EML is measured (operation S117). The order of measuring the optical properties (operation S115) and measuring the first thickness (operation S117) is not particularly limited herein. For example, the optical properties may be measured first (operation S115), and the first thickness may be measured subsequently (operation S117), or vice versa.

[0139] Measuring optical characteristics (operation S115) may include measuring a white angle difference (WAD) distribution by turning on a light-emitting element ED of an emission material layer EML formed on a substrate SUB. The WAD distribution refers to the white light emitted by the light-emitting element ED on a 1976 color coordinate system. In doing so, the experiment is repeated by changing the viewing angle when the user views the light-emitting element ED, and the colors appearing in each experiment are displayed on the color coordinate system. The distribution of such points on the color coordinate system is called a WAD distribution.

[0140] The color characteristics of the light emitting element ED may change depending on the shape of the WAD distribution on the color coordinate system. For example, if the WAD distribution is distributed throughout the green area or the red area, white may appear red on the display device 10. The WAD distribution can be measured using a spectrometer 600.

[0141] After measuring the WAD distribution, it is determined whether the WAD distribution is defective. For example, if the WAD distribution falls within the specifications, the WAD distribution is determined to be normal. If the WAD distribution falls outside the specifications, the WAD distribution is determined to be defective, and these results can be fed forward to correct the WAD distribution in subsequent processes. As used herein, feedforward means, for example, correcting the WAD distribution by adjusting the thickness of the first packaging film TFE1 (i.e., reducing or increasing the thickness) in a subsequent process for forming the first packaging film TFE1.

[0142] In the color coordinate system, based on the vertical axis, points with (-) values ​​in the direction away from 0 (zero) (y axis) become blue, and points with (+) values ​​in the direction away from 0 (zero) (y axis) become green. In addition, based on the horizontal axis, points with (-) values ​​in the direction away from 0 (zero) (x axis) become blue, and points with (+) values ​​in the direction away from 0 (zero) (x axis) become red.

[0143] According to some embodiments, in response to determining that the WAD distribution partially deviates from the normal specification range into a specific color zone, the thickness of the first packaging film TFE1 may be adjusted to shift the WAD distribution into the normal specification range. For example, if the WAD distribution partially deviates from the normal specification range into the red zone, the thickness of the first packaging film TFE1 may be increased to shift the WAD distribution into the blue zone. Conversely, if the WAD distribution partially deviates from the normal specification range into the green zone, the thickness of the first packaging film TFE1 may be decreased to shift the WAD distribution into the red zone.

[0144] According to some embodiments, after the emission material layer EML is manufactured, WAD distribution may be checked when measuring optical characteristics (operation S115 ), and the thickness of the first encapsulation film TFE1 may then be adjusted to correct the WAD distribution.

[0145] Measuring the first thickness (operation S117) may include measuring the thickness of the emission material layer EML. For example, measuring the first thickness (operation S117) may include measuring the thickness of the light emitting layer 500 of the emission material layer EML. In doing so, it is possible to check whether the light emitting layer 500 is properly formed in each of the emission areas EA1, EA2, and EA3 as designed to utilize the microcavity effect.

[0146] Measuring the first thickness (operation S117 ) may include measuring a thickness of each of the first functional layer 510 , the organic light emitting layer 520 , and the second functional layer 530 of the light emitting layer 500 using an ellipsometer.

[0147] After measuring the thickness of the light-emitting layer 500 in the first thickness measurement (operation S117), the thickness of each layer input when forming the light-emitting layer 500 is compared with the actual thickness formed to determine whether it is good or bad, which can be fed back to the formation of the light-emitting element layer (operation S110). For example, if the thickness of the organic light-emitting layer 520 is thinner than the designed thickness, a feedback signal can be provided to deposit it thicker.

[0148] Subsequently, forming a capping layer (operation S120) is performed. Forming the capping layer (operation S120) may include forming a capping layer CPL including a first capping layer CAP1 and a second capping layer CAP2 on the emission material layer EML. According to some embodiments of the present disclosure, the first capping layer CAP1 may include silicon oxide or silicon nitride, and the second capping layer CAP2 may include LiF.

[0149] Subsequently, forming a first encapsulation film (operation S130) is performed. Forming the first encapsulation film (operation S130) may include forming a first encapsulation film TFE1 of the thin film encapsulation layer TFEL. The first encapsulation film TFE1 may have a thickness in the range of approximately 600 nm to 2200 nm in order to protect the emission material layer EML from moisture and maintain adhesive properties.

[0150] According to some embodiments, the thickness of the first packaging film TFE1 may be adjusted based on a feedforward signal when measuring optical characteristics (operation S115). For example, the first packaging film TFE1 may be formed by adjusting (or correcting) the thickness of the first packaging film TFE1 in a facility (e.g., a CVD device) for forming the first packaging film TFE1.

[0151] In order to adjust the thickness of the first packaging film TFE1 based on the feedforward signal, the thickness of the first packaging film TFE1 can be checked by looking up a prepared correction table. In the correction table, the degree of shift in the WAD distribution depending on the thickness of the first packaging film TFE1 can be written as a numerical value obtained based on experience. For example, the first packaging film TFE1 is initially designed to be formed to a thickness of 220 nm, but based on the feedforward signal, the thickness of the first packaging film TFE1 can be increased to 230 nm.

[0152] Subsequently, measuring the second thickness (operation S135) is performed. Measuring the second thickness (operation S135) may include measuring the thickness of the first packaging film TFE1. In doing so, it may be checked whether the first packaging film TFE1 has been properly formed to a desired thickness based on the feedforward signal.

[0153] After measuring the thickness of the first encapsulation film TFE1 in the second thickness measurement operation S135, it is determined whether it is good or bad, which can be fed back to the formation of the first encapsulation film (operation S130). For example, if the thickness of the first encapsulation film TFE1 is different from the corrected input value, a feedback signal can be provided to adjust the deposition process conditions of the CVD equipment.

[0154] Subsequently, a second encapsulation film and a third encapsulation film are formed (operation S140). The formation of the second encapsulation film and the third encapsulation film (operation S140) may include forming a second encapsulation film TFE2 and a third encapsulation film TFE3 of the thin film encapsulation layer TFEL. The second encapsulation film TFE2 may be formed of a polymer material using a solution process. For example, the solution process may include spin coating, slit coating, inkjet printing, etc. The third encapsulation film TFE3 may be deposited using a CVD device and the inorganic insulating material described above.

[0155] Subsequently, attaching the polarizer (operation S150) is performed. Attaching the polarizer (operation S150) may include attaching the polarizer POL on the thin film encapsulation layer TFEL. After the polarizer POL has been attached, the display device 10 according to some embodiments may be completed.

[0156] As described above, the method for manufacturing the display device 10 according to some embodiments may include: measuring the WAD distribution after manufacturing the emission material layer EML; and adjusting the thickness of the first encapsulation film TFE1 by sending a feedforward signal. In this way, by adjusting the WAD distribution of the display device 10, color difference depending on the viewing angle can be reduced.

[0157] It should be noted that although the thickness of the first packaging film TFE1 is adjusted according to some embodiments, similar effects can be achieved by adjusting the refractive index by changing the film quality of the first packaging film TFE1. In this context, changing the film quality may mean adjusting the composition ratio of the first packaging film TFE1.

[0158] Figure 9 is a flowchart illustrating a method for manufacturing a display device according to some embodiments of the present disclosure. Figure 9 Various operations in the method for manufacturing a display device are illustrated, but embodiments according to the present disclosure are not limited thereto, and according to some embodiments, unless otherwise described or implied, the method for manufacturing a display device may include additional operations or fewer operations, or the order of the operations may be changed without departing from the spirit and scope of embodiments according to the present disclosure.

[0159] Figure 10 are cross-sectional views for illustrating processing operations of a method for manufacturing a display device according to some embodiments of the present disclosure.

[0160] Figure 9 and Figure 10 The embodiments described above Figures 6 to 8 The difference between the embodiment of the present invention is that the optical characteristics are measured after the thin film encapsulation layer TFEL is formed, and a feedforward signal is sent to the attached polarizer to adjust the WAD distribution. The following description will focus on the differences and some redundant descriptions may be omitted.

[0161] like Figure 9As shown in , a method for manufacturing a display device according to some embodiments may include: loading a substrate (operation S200); forming a light-emitting element layer (operation S210); forming a capping layer (operation S220); forming a thin film encapsulation layer (operation S230); and attaching a polarizer (operation S240). In addition, the method may include measuring optical characteristics (operation S235) and measuring thickness (operation S237) between forming the thin film encapsulation layer (operation S230) and attaching the polarizer (operation S240), and may include measuring optical characteristics of the polarizer (operation S239) before attaching the polarizer (operation S240).

[0162] Loading a substrate (operation S200), forming a light emitting element layer (operation S210), forming a capping layer (operation S220), and forming a thin film encapsulation layer (operation S230) and Figure 6 The loading substrate (operation S100), forming the light emitting element layer (operation S110), forming the capping layer (operation S120), forming the first packaging film (operation S130), and forming the second packaging film and the third packaging film (operation S140) shown in are the same; and therefore, some redundant descriptions can be omitted.

[0163] Measuring optical properties (operation S235) performed after forming the thin film encapsulation layer (operation S230) may include measuring the WAD distribution by turning on the light-emitting element ED of the emission material layer EML formed on the substrate SUB. After measuring the WAD distribution, it is determined whether the WAD distribution is defective. For example, if the WAD distribution falls within the specification, it is determined that the WAD distribution is normal. If the WAD distribution falls outside the specification, it is determined that the WAD distribution is defective, and these results can be fed forward to correct the WAD distribution in subsequent processes. As used herein, feedforward means correcting the WAD distribution by, for example, selecting a polarizer POL with specific optical properties and attaching the polarizer in a subsequent process of attaching the polarizer POL.

[0164] Measuring the thickness (operation S237) may include measuring the thickness of the thin film encapsulation layer TFEL. For example, measuring the thickness (operation S237) may include measuring the thickness of the first encapsulation film TFE1, the second encapsulation film TFE2, and the third encapsulation film TFE3 of the thin film encapsulation layer TFEL. In doing so, it is possible to check whether the first encapsulation film TFE1, the second encapsulation film TFE2, and the third encapsulation film TFE3 of the thin film encapsulation layer TFEL are properly formed as designed.

[0165] Measuring the thickness (operation S237 ) may include measuring the thickness of each of the first encapsulation film TFE1 , the second encapsulation film TFE2 , and the third encapsulation film TFE3 of the thin film encapsulation layer TFEL using an ellipsometer.

[0166] Measuring the thickness (operation S237) may include measuring the thickness of the first encapsulation film TFE1, the second encapsulation film TFE2, and the third encapsulation film TFE3 of the thin film encapsulation layer TFEL, and then determining whether the thickness of each of these layers is good or bad, which may be fed back to the forming of the thin film encapsulation layer (operation S230). For example, if the thickness of the thin film encapsulation layer TFEL is measured to be different from the design, a feedback signal may be provided to correct it.

[0167] In measuring the optical properties of the polarizer (operation S239), a polarizer with specific optical properties can be selected based on the feedforward signal in the subsequent process of attaching the polarizer POL. Depending on the manufacturing process conditions, the polarizer can have different optical properties. For example, by adjusting the concentration of iodine ions or depending on process conditions such as elongation ratio and drying time, the polarizer can present a bluish, reddish, or greenish color. The optical properties of this polarizer POL can be measured by a spectrometer or the like and can be expressed as color coordinates and chromaticity deviation (duv).

[0168] The WAD distribution fed forward from the previously performed measured optical characteristics (operation S235) is determined, and if the WAD distribution is determined to be out of specification, certain color coordinates and chromaticity deviations are required to correct the WAD distribution to within specification. According to some embodiments, the optical characteristics of the polarizer POL can be used to correct the WAD distribution in subsequent processes.

[0169] In measuring the optical characteristics of the polarizer (operation S239), a polarizer POL having specific color coordinates and chromaticity deviation can be selected based on the received feedforward signal. In an embodiment, in response to determining that the WAD distribution partially deviates from the normal specification range to a specific color zone, a polarizer POL having specific color coordinates and chromaticity deviation can be selected from a plurality of prepared polarizers POL in measuring the optical characteristics of the polarizer (operation S239) to move the WAD distribution to the normal specification range. For example, when the WAD distribution is partially positioned in the red zone, a polarizer with blue-biased coordinates can be selected for the first time to move the WAD distribution to the blue zone. Then, if the chromaticity deviation required to move the WAD distribution is approximately +0.003, a polarizer with a chromaticity deviation of approximately +0.003 can be selected for the second time. In this way, a polarizer with blue-biased coordinates and a chromaticity deviation of approximately +0.003 can be selected.

[0170] Subsequently, attaching a polarizer (operation S240 ) is performed. Attaching a polarizer (operation S240 ) may include attaching the previously selected polarizer POL on the thin film encapsulation layer TFEL to finally manufacture the display device 10 .

[0171] As described above, according to some embodiments, the WAD distribution of the display device 10 formed to the thin film encapsulation layer TFEL is checked in the measurement of optical characteristics (operation S235) before attaching the polarizer POL, and then the polarizer POL is selected and attached, thereby correcting the WAD distribution of the display device 10. Accordingly, the display quality of the display device 10 can be improved.

[0172] Figure 11 is a flowchart illustrating a method for manufacturing a display device according to some embodiments of the present disclosure. Figure 11 Various operations in the method for manufacturing a display device are illustrated, but the embodiments according to the present disclosure are not limited thereto, and according to some embodiments, unless otherwise described or implied, the method for manufacturing a display device may include additional operations or fewer operations, or the order of the operations may be changed without departing from the spirit and scope of the embodiments according to the present disclosure.

[0173] Figure 11 The embodiments described above Figures 6 to 10 The embodiment of the invention is different in that, according to Figure 6 and Figure 9 The methods of some embodiments are combined.

[0174] like Figure 11 As shown in , the method for manufacturing a display device according to some embodiments may include: loading a substrate (operation S300); forming a light-emitting element layer (operation S310); forming a capping layer (operation S320); forming a first encapsulation film (operation S330); forming a second encapsulation film and a third encapsulation film (operation S340); and attaching a polarizer (operation S350). In addition, the method may include measuring a first optical characteristic (operation S315) and measuring a first thickness (operation S317) between forming the light-emitting element layer (operation S310) and forming the capping layer (operation S320), and may include measuring a second optical characteristic (operation S345), measuring a second thickness (operation S347), and measuring an optical characteristic of the polarizer (operation S349) between forming the second encapsulation film and the third encapsulation film (operation S340) and attaching the polarizer (operation S350).

[0175] Loading the substrate (operation S300), forming the light emitting element layer (operation S310), forming the capping layer (operation S320), measuring the first optical characteristic (operation S315) and measuring the first thickness (operation S317) are respectively the same as those described above. Figure 6 The steps of loading a substrate (operation S100 ), forming a light emitting element layer (operation S110 ), forming a capping layer (operation S120 ), measuring optical characteristics (operation S115 ), and measuring a first thickness (operation S117 ) are the same.

[0176] Forming a first packaging film (operation S330), forming a second packaging film and a third packaging film (operation S340), attaching a polarizer (operation S350), measuring a second optical characteristic (operation S345), measuring a second thickness (operation S347), and measuring an optical characteristic of the polarizer (operation S349) are similar to those described above. Figure 9 The forming of a thin film encapsulation layer (operation S230), attaching a polarizer (operation S240), measuring optical characteristics (operation S235), measuring thickness (operation S237), and measuring optical characteristics of the polarizer (operation S239) are the same.

[0177] According to some embodiments, the first optical characteristic is measured (operation S315) after forming the light-emitting element layer (operation S310), and a feedforward signal is sent to correct the WAD distribution for the first time during the formation of the first encapsulation film (operation S330). Furthermore, the second optical characteristic is measured (operation S345) after forming the thin-film encapsulation layer, and a feedforward signal is sent to correct the WAD distribution for the second time during the attachment of the polarizer (operation S350). In this way, by correcting the WAD distribution twice, the display quality of the display device 10 can be improved.

[0178] Figure 12 : is an xy color coordinate system showing the WAD distribution of the display device before improvement. Figure 13 is an xy color coordinate system showing the WAD distribution of the improved display device.

[0179] Figure 12 The simulation does not use the above described Figures 6 to 11 Results of WAD distribution of a display device at a viewing angle of 60 degrees according to the method for manufacturing a display device. Figure 13 shows the simulation using the above described Figures 6 to 8 Results of WAD distribution of a display device at a viewing angle of 60 degrees according to the method for manufacturing a display device.

[0180] like Figure 12 As shown in , the defect rate is 632 ppm, and there are approximately 117 defective units (ie, display devices). As used herein, a defective display device refers to a display device having an out-of-specification WAD distribution.

[0181] In contrast, Figure 13 As shown in , when the WAD distribution is corrected by adjusting the thickness of the first encapsulation film (eg, increasing the thickness of the first encapsulation film), the defect rate is 38 ppm, and there are approximately 7 defective units (ie, display devices).

[0182] It can be seen from the above simulation results that by correcting the WAD distribution of a display device using the method for manufacturing a display device according to some embodiments of the present disclosure, the display quality can be improved.

[0183] The display device according to one embodiment of the present disclosure can be applied to various electronic devices. The electronic device according to one embodiment of the present disclosure includes the display device described above, and in addition to the display device, may further include various modules or devices having additional functions.

[0184] Figure 14 is a block diagram of an electronic device according to one embodiment of the present disclosure.

[0185] refer to Figure 14 According to one embodiment of the present disclosure, the electronic device 1 may include a display module 11 , a processor 12 , a memory 13 , and a power module 14 .

[0186] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphic processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0187] The memory 13 may store data information required for the operation of the processor 12 or the display module 11. When the processor 12 executes an application stored in the memory 13, an image data signal and / or an input control signal is transmitted to the display module 11, and the display module 11 may process the received signal and output image information through the display screen.

[0188] The power module 14 may include a power supply module (such as a power adapter or a battery, for example) and a power conversion module that converts power supplied by the power supply module to generate power required for the operation of the electronic device 1 .

[0189] At least one of the components of the electronic device 1 according to one embodiment of the present disclosure may be included in the display device 10 according to an embodiment of the present disclosure. In addition, some of the individual modules functionally included in one module may be included in the display device 10, and other modules may be provided separately from the display device 10. For example, the display device 10 may include the display module 11, and the processor 12, the memory 13, and the power module 14 may be provided in the form of other devices in addition to the display device 10 within the electronic device 1.

[0190] Figure 15 is a schematic diagram of an electronic device according to various embodiments of the present disclosure.

[0191] refer to Figure 15Various electronic devices to which the display device 10 according to an embodiment of the present disclosure is applied may include not only image display electronic devices such as smart phones 10_1a, tablet PCs (personal computers) 10_1b, laptop computers 10_1c, televisions 10_1d, and desktop monitors 10_1e, but may also include wearable electronic devices including display modules (such as smart glasses 10_2a, head-mounted displays 10_2b, and smart watches 10_2c, for example) and vehicle electronic devices 10_3 including display modules arranged on the dashboard, central instrument panel, and instrument console of a car (for example, a CID (central information display) and an interior mirror display).

[0192] At the end of the detailed description, those skilled in the art will appreciate that many changes and modifications can be made to the disclosed embodiments without actually departing from the principles of the invention. Therefore, the disclosed embodiments of the present invention are used in a general and descriptive sense only and not for the purpose of limitation.

Claims

1. A method for manufacturing a display device, the method comprising: loading the substrate; forming a light-emitting element layer on the substrate; forming a capping layer on the light-emitting element layer; forming a first packaging film on the capping layer; forming a thin film encapsulation layer by forming a second encapsulation film and a third encapsulation film on the first encapsulation film; attaching a polarizer on the thin film encapsulation layer; as well as measuring a first optical characteristic of the light-emitting element layer before forming the capping layer, Wherein, measuring the first optical characteristic includes: The white angle difference WAD distribution of the light emitting element layer is measured and determined to send a feedforward signal so as to adjust the thickness of the first packaging film.

2. The method according to claim 1, wherein Loading the substrate comprises: The substrate on which the plurality of pixel electrodes are formed is loaded into a deposition apparatus.

3. The method according to claim 2, wherein: Forming the light emitting element layer includes: forming a light-emitting layer on the pixel electrode; and A common electrode is formed on the light emitting layer.

4. The method according to claim 1, wherein Measuring the first optical characteristic includes: The WAD distribution of white light of the light-emitting element layer is measured.

5. The method according to claim 1, wherein Measuring the first optical characteristic includes: determining that the WAD distribution does not fall within normal specifications; and In response to determining that the WAD distribution does not fall within the normal specification range, the feed-forward signal is sent to adjust the thickness of the first packaging film.

6. The method according to claim 5, further comprising: In response to determining that the WAD distribution partially deviates from the normal specification range to a specific color region, the thickness of the first packaging film is adjusted to move the WAD distribution to the normal specification range.

7. The method according to claim 6, wherein: Adjusting the thickness of the first packaging film includes: The thickness of the first packaging film is increased or decreased.

8. The method according to claim 1, wherein Measuring the first optical characteristic includes: The WAD distribution is measured using a spectrometer.

9. The method according to claim 1, further comprising: measuring the thickness of the light emitting element layer before forming the capping layer, The light-emitting element layer includes a light-emitting layer, and the light-emitting layer includes a first functional layer, an organic light-emitting layer and a second functional layer.

10. The method according to claim 9, wherein: Measuring the thickness of the light-emitting element layer includes: measuring a thickness of each of the first functional layer, the organic light emitting layer, and the second functional layer; and The input thickness is compared with the actually formed thickness to send a feedback signal to form the light emitting element layer.

11. The method according to claim 1 , further comprising: The second optical characteristic of the light emitting element layer is measured and the optical characteristic of the polarizer is measured between forming the thin film encapsulation layer and attaching the polarizer.

12. The method according to claim 11, wherein Measuring the second optical characteristic includes: The WAD distribution of white light of the light-emitting element layer is measured.

13. The method according to claim 12, further comprising: In response to determining that the WAD distribution partially deviates from a normal specification range to a specific color region, selection is made from among a plurality of prepared polarizers in measuring the optical characteristics of the polarizer so that the WAD distribution moves to the normal specification range.

14. The method according to claim 13, wherein The polarizer is selected from among the plurality of polarizers that have been prepared by considering color coordinates and chromaticity deviation.

15. A method for manufacturing a display device, the method comprising: loading the substrate; forming a light-emitting element layer on the substrate; forming a capping layer on the light-emitting element layer; forming a thin film encapsulation layer on the capping layer; attaching a polarizer on the thin film encapsulation layer; as well as measuring optical characteristics of the light emitting element layer and measuring optical characteristics of the polarizer between forming the thin film encapsulation layer and attaching the polarizer, Wherein, measuring the optical properties of the light-emitting element layer includes: The white angle difference WAD distribution of the light emitting element layer is measured and determined to send a feedforward signal so as to select from a plurality of prepared polarizers.

16. The method according to claim 15, wherein Measuring the optical properties of the light-emitting element layer includes: The WAD distribution of white light of the light-emitting element layer is measured.

17. The method according to claim 16, further comprising: In response to determining that the WAD distribution partially deviates from a normal specification range to a specific color region, selection is performed from among the plurality of polarizers that have been prepared so that the WAD distribution moves to the normal specification range.

18. The method according to claim 17, wherein In measuring the optical characteristics of the polarizer, the polarizer is selected from among the plurality of polarizers that have been prepared by considering color coordinates and chromaticity deviation.

19. The method of claim 15, further comprising: measuring the thickness of the thin film encapsulation layer before attaching the polarizer, Wherein, the thin film encapsulation layer includes a first encapsulation film, a second encapsulation film and a third encapsulation film.

20. The method according to claim 19, wherein Measuring the thickness of the thin film encapsulation layer includes: measuring a thickness of each of the first packaging film, the second packaging film, and the third packaging film; and The input thickness is compared with the actually formed thickness to send a feedback signal to form the thin film encapsulation layer.

21. An electronic device comprising: A display device manufactured by the method according to any one of claims 1 to 20, configured to provide an image; a processor configured to provide an image data signal to the display device; a memory configured to store data information for operation; as well as The power module is configured to generate electricity.

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