Plating device

Abstract

The invention provides a plating device capable of improving the uniformity of the thickness of a plating film formed on a plating object. A resistor of a plating apparatus includes a first resistor member and a second resistor member disposed between the first resistor member and a substrate holder or between the first resistor member and an anode. A plurality of first through-holes that open on the substrate holder side and the anode side are formed in the first resistance member, and at least a portion of the plurality of first through-holes overlap the second resistance member such that the anode cannot be seen when the anode side is viewed from the substrate side. The second resistance member is configured such that the distance from the first resistance member is variable.

Description

Technical Field

[0001] The present application relates to a plating apparatus. Background Art

[0002] As an example of a plating device using an electroplating method, a so-called immersion-type plating device is known, in which a substrate (e.g., a semiconductor wafer) and an anode are horizontally opposed to each other (e.g., see Patent Document 1). In addition, as another example of a plating device using an electroplating method, a cup-type plating device is known (e.g., see Patent Document 2). In a cup-type plating device, a substrate held by a substrate holder is immersed in a plating solution with the plated surface facing downward, and a voltage is applied between the substrate and the anode, thereby depositing a conductive film (plating film) on the surface of the substrate.

[0003] In such a plating device, usually, the substrate has an electrical contact at its peripheral portion. Due to the different distances from the electrical contacts, a potential difference is generated between the peripheral portion and the central portion of the substrate during the plating process, which may cause the plating current to deviate. Therefore, it is known that in the past, in order to improve the uniformity of the thickness of the plated film formed on the substrate, a resistor body for adjusting the electric field is configured between the substrate and the anode. In addition, in order to make the electric field adjustment more flexible, a plating device in which the size of the hole of the resistor body is variable has been proposed (see patent document 3).

[0004] Patent Document 1: Japanese Patent No. 7462125

[0005] Patent Document 2: Japanese Patent No. 7079388

[0006] Patent Document 3: Japanese Patent No. 7204060

[0007] In a plating device, except the distance relationship with the electric contact, the thickness of the plated film may also produce deviation due to the resist pattern formed on the substrate. That is to say, if the plated surface of the substrate includes a region (non-opening region) where the resist opening is not formed to some extent, the plating current will not flow through the non-opening region, and the plating current is concentrated in the peripheral portion of the non-opening region, causing the thickness of the plated film to become larger. As a specific example, when the resist opening is formed only in the roughly cross-shaped region on the substrate, the resist opening is not formed in the region of the cross-shaped outside and no current flows, so the uniformity of the thickness of the plated film may be damaged. Here, for example, in patent documentation 1, in order to adjust the electric field between anode and substrate, an anode mask that can adjust the size of the anode opening is used. However, existing structures are designed to cope with the deviation of the plated film thickness caused by the structure of the plating devices such as electric contacts, and sometimes cannot fully cope with the deviation of the plated film thickness caused by the resist pattern of substrate. To make the thickness of the plating film uniform, dummy openings may be formed in the non-opening area. However, this requires processing for forming the dummy openings and unnecessary plating is formed in the dummy openings, thereby increasing the cost of the plating process. Summary of the Invention

[0008] The present invention has been made in view of the above-mentioned problems, and one of its objects is to provide a plating apparatus capable of improving the uniformity of the thickness of a plated film formed on a plated object.

[0009] According to one embodiment, a plating device is proposed, which includes: a plating tank; a substrate holder configured to hold a substrate; an anode arranged in the plating tank in a manner opposite to the substrate held by the above-mentioned substrate holder; and a resistor arranged between the above-mentioned substrate holder and the above-mentioned anode for adjusting the electric field, the above-mentioned resistor including: a first resistor component, and a second resistor component arranged between the above-mentioned first resistor component and the above-mentioned substrate holder or between the above-mentioned first resistor component and the above-mentioned anode, the above-mentioned first resistor component is formed with a plurality of first through holes opening on the above-mentioned substrate holder side and the above-mentioned anode side, at least a portion of the above-mentioned plurality of first through holes overlaps with the above-mentioned second resistor component in a manner that the above-mentioned anode side cannot be visually identified when observing the anode side from the substrate side, and the above-mentioned second resistor component is configured to have a variable distance from the above-mentioned first resistor component. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a perspective view showing the overall structure of the plating apparatus according to this embodiment.

[0011] Figure 2 It is a plan view showing the overall structure of the plating apparatus according to this embodiment.

[0012] Figure 3It is a longitudinal sectional view schematically showing the structure of the plating module according to the present embodiment.

[0013] Figure 4 FIG. 1 is a top view of the first resistance component of this embodiment.

[0014] Figure 5 FIG. 1 is a top view of the second resistance component in this embodiment.

[0015] Figure 6 It is a longitudinal sectional view of the resistor body schematically showing a state in which the first resistance member and the second resistance member are separated.

[0016] Figure 7 It is a longitudinal sectional view of the resistor body schematically showing a state in which the first resistance member and the second resistance member are in contact with each other.

[0017] Figure 8 This is a flowchart showing an example of a method for setting an operation plan of a resistor, an anode cover, and a shield based on a control module.

[0018] Figure 9 This is a diagram schematically showing a resist pattern formed on a plated surface of a substrate according to one embodiment.

[0019] Figure 10 This is a flowchart showing an example of a method for setting an operation plan of a resistor, an anode cover, and a shield in a plating process based on a control module.

[0020] Figure 11 It is a longitudinal sectional view schematically showing a resistor body in a state where the first resistor member and the second resistor member are separated from each other in the first modification.

[0021] Figure 12 It is a longitudinal sectional view of the resistor body schematically showing a state in which the first resistance member and the second resistance member are in contact with each other in the first modification.

[0022] Figure 13 This is an enlarged schematic longitudinal sectional view of a resistor element in a state where a first resistor member and a second resistor member are separated by a first distance in a second modification.

[0023] Figure 14 This is an enlarged schematic longitudinal sectional view of a resistor element in a state where the first resistor member and the second resistor member are separated by a second distance in a second modification.

[0024] Figure 15 This is an enlarged schematic longitudinal sectional view of a resistor in a state where the first resistor member and the second resistor member are separated by a third distance in the second modification. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals and redundant descriptions are omitted.

[0026] <Overall structure of the plating equipment>

[0027] Figure 1 It is a perspective view showing the overall structure of the plating apparatus according to this embodiment. Figure 2 : is a top view showing the overall structure of the plating device of this embodiment. Figure 1 and Figure 2 As shown, the plating apparatus 1000 includes a loading port 100 , a transfer robot 110 , an aligner 120 , a pre-wet module 200 , a pre-preg module 300 , a plating module 400 , a cleaning module 500 , a spin-rinsing and drying device 600 , a transfer device 700 , and a control module 800 .

[0028] The loading port 100 is a module for loading a substrate housed in a box such as a FOUP (not shown) into the plating device 1000, or for unloading a substrate from the plating device 1000 into the box. In this embodiment, four loading ports 100 are arranged side by side in the horizontal direction, but the number and configuration of the loading ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates, and is configured to transfer substrates between the loading port 100, the aligner 120, and the transport device 700. When transferring substrates between the transport robot 110 and the transport device 700, the transport robot 110 and the transport device 700 can transfer the substrates via a temporary table (not shown).

[0029] The aligner 120 is a module for aligning the orientation plane, recess, etc. of the substrate in a predetermined direction. In the present embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and configuration of the aligners 120 are arbitrary. The pre-wet module 200 wets the plated surface of the substrate before the plating process using a treatment liquid such as pure water or degassed water, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. The pre-wet module 200 is configured to implement a pre-wet process, which is a process of easily supplying the plating liquid to the pattern by replacing the treatment liquid inside the pattern with the plating liquid during plating. In the present embodiment, two pre-wet modules 200 are arranged side by side in the vertical direction, but the number and configuration of the pre-wet modules 200 are arbitrary.

[0030] The prepreg module 300 is configured to implement prepreg treatment, and this prepreg treatment is to remove the oxide film with large resistance such as the seed layer surface formed on the plated surface of the substrate before the plating treatment with treatment liquids such as sulfuric acid and hydrochloric acid, and the plating base surface is cleaned or activated. In the present embodiment, two prepreg modules 300 are arranged side by side in the vertical direction, but the number and configuration of the prepreg modules 300 are arbitrary. The plating module 400 implements plating treatment to the substrate. In the present embodiment, there are two groups of twelve plating modules 400, three of which are arranged side by side in the vertical direction and four of which are arranged side by side in the horizontal direction, and a total of twenty-four plating modules 400 are provided, but the number and configuration of the plating modules 400 are arbitrary.

[0031] The cleaning module 500 is configured to implement cleaning process to substrate, so as to remove the residual plating liquid etc. of the substrate after the plating process. In the present embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the quantity and configuration of the cleaning modules 500 are arbitrary. The rotary rinsing and drying device 600 is a module for rotating and drying the substrate after the cleaning process at high speed. In the present embodiment, two rotary rinsing and drying devices are arranged side by side in the vertical direction, but the quantity and configuration of the rotary rinsing and drying devices are arbitrary. The transport device 700 is a device for transporting substrates between the multiple modules in the plating device 1000. The control module 800 is configured to control the multiple modules of the plating device 1000, and for example, can be composed of a general computer or a special computer having an input and output interface with the operator.

[0032] An example of a series of plating processes using the plating apparatus 1000 will be described. First, a substrate stored in a cassette is loaded into the loading port 100. Next, the transport robot 110 removes the substrate from the cassette in the loading port 100 and transports the substrate to the aligner 120. The aligner 120 aligns the orientation flats, notches, and other positions of the substrate in a predetermined direction. The transport robot 110 delivers the substrate, aligned by the aligner 120, to the transport apparatus 700.

[0033] The transport device 700 transports the substrate received from the transport robot 110 to the pre-wetting module 200. The pre-wetting module 200 performs a pre-wetting process on the substrate. The transport device 700 transports the pre-wetting substrate to the pre-preg module 300. The pre-preg module 300 performs a pre-preg process on the substrate. The transport device 700 transports the pre-preg substrate to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0034] The transport device 700 transports the plated substrate to the cleaning module 500. The cleaning module 500 cleans the substrate. The transport device 700 transports the cleaned substrate to the spin rinse and dryer 600. The spin rinse and dryer 600 dries the substrate. The transport device 700 hands the dried substrate to the transport robot 110. The transport robot 110 transports the substrate received from the transport device 700 to the cassette at the load port 100. Finally, the cassette containing the substrate is unloaded from the load port 100.

[0035] <Structure of the plating module>

[0036] Next, the structure of the plating module 400 will be described. In this embodiment, the twenty-four plating modules 400 have the same structure, so only one plating module 400 will be described.

[0037] Figure 3 : is a longitudinal sectional view schematically showing the structure of the plating module 400 of this embodiment. Figure 3 As shown, the plating module 400 includes a plating tank 410 for storing plating solution. The plating tank 410 is composed of a cylindrical inner tank with an open top and an outer tank (not shown) provided around the inner tank to store the plating solution overflowing from the upper edge of the inner tank.

[0038] The plating module 400 includes a substrate holder 440 for holding the substrate Wf in a state where the plated surface Wf-a faces downward. In addition, the substrate holder 440 includes a power supply contact (not shown) for supplying power to the substrate Wf from a power source not shown. In one embodiment, the power supply contact contacts the outer edge of the substrate Wf to supply power to the outer edge of the substrate Wf. The plating module 400 includes a lifting mechanism 442 for raising and lowering the substrate holder 440. In addition, in one embodiment, the plating module 400 includes a rotating mechanism 448 for rotating the substrate holder 440 around a vertical axis. The lifting mechanism 442 and the rotating mechanism 448 can be implemented by well-known mechanisms such as motors.

[0039] The plating module 400 includes a diaphragm 420 that vertically divides the interior of the plating tank 410. The interior of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by the diaphragm 420. The cathode region 422 and the anode region 424 are each filled with a plating solution. While this embodiment shows an example in which the diaphragm 420 is provided, the diaphragm 420 may not be provided.

[0040] An anode 430 is provided on the bottom surface of the anode region 424 of the plating tank 410. As an example, the anode 430 is a circular component having a plate surface approximately equal in size to the plate surface of the substrate Wf. Furthermore, an anode mask 426 is provided in the anode region 424 for adjusting the electric field between the anode 430 and the substrate Wf. The anode mask 426 is provided near the anode 430 and is, for example, a roughly plate-shaped electric field shield made of a dielectric material. The anode mask 426 has an opening for the current flowing between the anode 430 and the substrate Wf. In this embodiment, the anode mask 426 is configured to have a variable opening size, and the opening size is adjusted by the control module 800. Here, the opening size refers to the diameter when the opening is circular, and refers to the length of one side or the longest opening width when the opening is polygonal. The opening size of the anode mask 426 can be changed using a known mechanism. While this embodiment shows an example in which the anode mask 426 is provided, it is also possible not to provide the anode mask 426. Furthermore, the diaphragm 420 may also be disposed at the opening of the anode cover 426 .

[0041] The plating module 400 includes a resistor 450 disposed between the substrate Wf and the anode 430. In this embodiment, the resistor 450 is disposed in the cathode region 422. The resistor 450 is a component for adjusting the electric field to achieve uniform plating on the plated surface Wf-a of the substrate Wf. Since the resistor 450 increases the resistance between the anode 430 and the substrate Wf and the electric field is not easily expanded, the thickness of the plated film formed on the plated surface Wf-a of the substrate Wf can be uniformly distributed. Therefore, if the distance between the substrate Wf and the resistor 450 increases, the space in which the electric field between the substrate Wf and the resistor 450 can expand becomes larger. Therefore, the resistor 450 is preferably disposed near the plated surface Wf-a of the substrate Wf. The resistor 450 will be described in detail later.

[0042] The plating module 400 also includes a paddle 480 positioned between the substrate Wf held by the substrate holder 440 and the resistor 450, and a paddle stirring mechanism 482 for moving the paddle 480 within the plating solution to stir the solution. The paddle 480 is not limited, but can, for example, be formed of a plate member having a large number of honeycomb-shaped holes. The paddle stirring mechanism can be implemented using a known mechanism such as a motor. The paddle stirring mechanism 482 is configured to cause the paddle 480 to reciprocate along the plated surface Wf-a of the substrate Wf, thereby stirring the plating solution near the plated surface Wf-a of the substrate Wf. However, this is not limited to the above example; as an example, the paddle stirring mechanism 482 can also be configured to cause the paddle 480 to reciprocate perpendicular to the plated surface Wf-a. While this embodiment shows an example in which the paddle 480 and the paddle stirring mechanism 482 are provided, it is also possible not to provide the paddle 480 and the paddle stirring mechanism 482.

[0043] In addition, a sensor 460 for detecting parameters related to the coating formed on the plated surface Wf-a of the substrate Wf is provided in the cathode region 422. In the present embodiment, the parameters related to the coating refer to physical quantities used to infer the film thickness of the coating or the formation speed of the coating. The sensor 460 is configured to face the plated surface Wf-a. In the present embodiment, the sensor 460 is configured to be movable in a manner that changes the detection position along the radial direction of the substrate Wf. However, it is not limited to the above example, and a plurality of sensors 460 facing the plated surface Wf-a may also be provided. In addition, in one embodiment, the detection end of the sensor 460 is arranged inside the resistor 450 (inside the groove 454). However, it is not limited to the above example, and the sensor 460 may also be provided at other locations outside the resistor 450.

[0044] The detection signal from sensor 460 is input to control module 800. In this embodiment, a potential sensor having a detection electrode (not shown) is used as sensor 460. Furthermore, the detection electrode of sensor 460 can be positioned facing the plated surface Wf-a, or it can be positioned within a conduit that faces the plated surface Wf-a and is filled with plating solution. Furthermore, when a potential sensor is used as sensor 460, at least one reference potential sensor 462 can be provided within plating tank 410. Reference potential sensor 462 can be positioned outside the region between substrate Wf and anode 430. In other words, when viewed from a direction perpendicular to plated surface Wf-a of substrate Wf, reference potential sensor 462 can be positioned so as not to overlap substrate Wf and anode 430. Based on the potential difference between sensor 460 and reference potential sensor 462, control module 800 can infer the formation rate of the plated film formed on plated surface Wf-a and measure the thickness of the plated film. This is based on the correlation between the plating current and the potential during the plating process. However, any sensor capable of detecting parameters related to the coating film can be used as sensor 460. Alternatively, or in addition to the potential sensor, another sensor such as a white confocal optical distance sensor, a magnetic field sensor, or an eddy current sensor can be used. While this embodiment shows an example in which sensor 460 is provided for detecting parameters related to the coating film, sensor 460 may also be omitted.

[0045] A shield 470 is provided in the cathode region 422 to shield the current flowing from the anode 430 to the substrate Wf. In this embodiment, the shield 470 is provided at the same height as the paddle 480, but this is not limited to the above example. The shield 470 is, for example, a substantially plate-shaped member made of a dielectric material. The shield 470 is configured to be movable to a shielding position between the plated surface Wf-a of the substrate Wf and the anode 430, and to a retreating position away from the plated surface Wf-a and the anode 430. In other words, the shield 470 is configured to be movable to a shielding position below the plated surface Wf-a, and to a retreating position away from the plated surface Wf-a. The position of the shield 470 is controlled by a drive mechanism 472 that receives instructions from the control module 800. The drive mechanism 472 can be implemented by a known mechanism such as a motor or a solenoid.

[0046] Resistor

[0047] The resistor 450 of this embodiment will be described in detail. The resistor 450 of this embodiment includes a first resistor component 452 and a second resistor component 456. The first resistor component 452 and the second resistor component 456 are components having a higher resistivity than the plating solution and are preferably dielectric. The first resistor component 452 and the second resistor component 456 may be formed of the same material or different materials.

[0048] Figure 4 FIG. 1 is a top view of the first resistance component of this embodiment. Figure 4 In the figure, the area occupied by the outer shape of the second resistor member 456, which is arranged on the back side of the first resistor member 452, is hatched. In one embodiment, the first resistor member 452 is a circular plate-shaped member fixed to the plating tank 410 and slightly larger than the substrate Wf when viewed from above. Alternatively, as an example, the first resistor member 452 may be configured to be movable vertically within the plating tank 410.

[0049] A plurality of first through holes 453 are formed in the first resistor component 452, which are open on the substrate holder 440 side and the anode 430 side. In one embodiment, the plurality of first through holes 453 are through holes of the same size, and are long hole-shaped openings with a circumferential length that is about twice the radial length. However, this is not limited to the above example, and each of the plurality of first through holes 453 can be a perfect circle when viewed from above, can be any other shape, or can be a through hole of different sizes. In addition, in one embodiment, the first through holes 453 are arranged on three or more virtual reference circles ( Figure 4 (see dashed line). In this case, in one embodiment, the plurality of first through-holes 453 arranged on adjacent reference circles are arranged at positions where the angular positions of the reference circles are offset from one another. In other words, the centers of the first through-holes 453 arranged on adjacent reference circles are not arranged on a straight line extending radially, but are arranged so as to be staggered in the circumferential direction. However, the plurality of first through-holes 453 are not limited to the above example and may also be arranged on a straight line extending radially.

[0050] In one embodiment, a groove 454 is formed in the first resistor member 452 to accommodate at least a portion of the sensor 460. Figure 4 In the embodiment, the groove 454 is shown as penetrating the substrate holder 440 side and the anode 430 side, but as an example, the anode 430 side may be closed. In addition, in one embodiment, the groove 454 extends from the outer periphery of the second resistor 456 to the inner side when viewed from above. In one embodiment, as shown in FIG. Figure 3 and Figure 4As shown, the sensor 460 is arranged in the groove 454 so as not to protrude upward from the upper surface of the second resistive component 456. As described above, the resistor 450 is preferably arranged near the plated surface Wf-a, and the sensor 460 for detecting parameters related to the plated film is also preferably arranged near the plated surface Wf-a of the substrate Wf. The arrangement of the sensor 460 in the groove 454 can reduce the distance between the resistor 450 and the plated surface Wf-a of the substrate Wf, and can appropriately detect parameters related to the film thickness of the plated film. In addition, in this embodiment, a paddle 480 is arranged between the resistor 450 and the substrate Wf. The arrangement of the sensor 460 in the groove 454 can prevent interference between the sensor 460 and the paddle 480 without restricting the movement of the paddle 480 for stirring.

[0051] Figure 5 : This is a top view of the second resistor component of this embodiment. In one embodiment, the second resistor component 456 is a ring-shaped annular plate-shaped component when viewed from above. In one embodiment, the inner diameter of the second resistor component 456 is 50% to 70% of the diameter of the first resistor component 452 or the substrate Wf, preferably 55% to 65%. In addition, in one embodiment, the outer diameter of the second resistor component 456 is 70% to 90% of the diameter of the first resistor component 452 or the substrate Wf, preferably 80% to 90%. However, the second resistor component 456 is not limited to a ring-shaped component and can be of any shape. The second resistor component 456 overlaps with the through-hole in such a way that the anode 430 cannot be visually identified through at least a portion of the multiple first through-holes 453 of the first resistor component 452 when the anode 430 side is viewed from the substrate Wf side (when viewed from above). In other words, at least a portion of the multiple first through-holes 453 in the first resistor component 452 are covered by the second resistor component 456. In addition, in one embodiment, when viewed from above, the second resistor member 456 is formed in a region ( Figure 4 The first through-holes 453 (shown as hatched areas in the figure) are entirely covered by the second resistor member 456. However, when viewed from above, a portion of the first through-holes 453 formed in an area overlapping with the outer shape of the second resistor member 456 may be covered by the second resistor member 456, while a portion of the through-holes may not be covered by the second resistor member 456.

[0052] In one embodiment, the second resistor component 456 is arranged below the first resistor component 452 (between the first resistor component 452 and the anode 430). This is based on the fact that the resistor 450 is preferably arranged near the substrate Wf as described above and the space above the resistor 450 is limited, while the space below the resistor 450 is relatively abundant. However, the second resistor component 456 may also be arranged above the first resistor component 452 (between the first resistor component 452 and the substrate holder 440). In addition, the second resistor component 456 may be supported in the plating tank 410 by a supporting mechanism not shown. In addition, the second resistor component 456 is arranged concentrically with the substrate Wf or the anode 430 when viewed from above. In one embodiment, the second resistor component 456 has a smaller size than the substrate Wf or the anode 430 when viewed from above and is arranged closer to the center than the peripheral portion of the substrate Wf or the anode 430 (refer to Figure 3 In one embodiment, the thickness Th2 of the second resistance component 456 is smaller than the thickness Th1 of the first resistance component 452. As an example, the thickness Th2 of the second resistance component 456 is preferably less than half, less than one-third, less than one-fifth, or less than one-tenth of the thickness Th1 of the first resistance component 452.

[0053] The second resistor member 456 is formed with a plurality of second through holes 457 that are open on the substrate holder 440 side and the anode 430 side. In this embodiment, the plurality of second through holes 457 are formed at positions different from the plurality of first through holes 453 of the first resistor member 452 when viewed from above. However, a portion of the plurality of second through holes 457 may be formed at the same position as the first through holes 453 of the first resistor member 452. In one embodiment, the plurality of second through holes 457 are arranged on two or more concentric virtual reference circles ( Figure 5 In other words, the plurality of second through holes 457 are arranged to be dispersed in the radial direction of the second resistor component 456. In addition, in one embodiment, each of the plurality of second through holes 457 is a through hole having the same shape as the first through hole 453 of the first resistor component 452 when viewed from above. However, the plurality of second through holes 457 can have any shape. In addition, in this embodiment, an example of forming a plurality of second through holes 457 in the second resistor component 456 is shown, but the second through holes 457 may not be formed.

[0054] The second resistance component 456 is configured to be able to move up and down so that the distance from the first resistance component 452 is variable. In one embodiment, the second resistance component 456 is configured to be able to move to a position away from the first resistance component 452, and to a position where it contacts the first resistance component 452 and at least a portion of the plurality of first through holes 453 is blocked by the second resistance component 456. However, the second resistance component 456 may not be in contact with the first resistance component 452. In addition, in one embodiment, the plating module 400 includes a drive mechanism 451 configured to move the second resistance component 456 up and down. The drive mechanism 451 can be implemented by a well-known mechanism such as a pneumatic actuator. In addition, as an example, the drive mechanism 451 can also utilize power from a power source (e.g., a compressed air source) of the lifting mechanism 442 of the substrate holder 440.

[0055] Such a resistor 450 can change the electric field adjustment amount in the region where the second resistance member 456 is mainly arranged by changing the distance between the first resistance member 452 and the second resistance member 456 . Figure 6 4 is a longitudinal sectional view schematically showing a state where the first resistance member 452 and the second resistance member 456 are separated from each other. Figure 7 4 is a longitudinal sectional view schematically showing a state where the first resistance member 452 and the second resistance member 456 are in contact with each other. Figure 6 and Figure 7 In the example shown, a portion of the current flowing near the resistor 450 is schematically shown by a dot-dash line. As described above, in this embodiment, when viewed from above, at least a portion of the plurality of first through holes 453 of the first resistor member 452 is covered by the second resistor member 456. Figure 6 As shown in FIG. 4 , when the first resistor 452 and the second resistor 456 are sufficiently separated, the current passing through the plurality of first through holes 453 of the first resistor 452 is hardly blocked by the second resistor 456. However, if the distance between the first resistor 452 and the second resistor 456 becomes closer, the distance between the plurality of first through holes 453 of the first resistor 452 and the second resistor 456 becomes closer, and it becomes difficult for the current to flow through the first through holes 453. Figure 7 As shown, when the first resistor 452 and the second resistor 456 come into contact, a portion of the first through-hole 453 of the first resistor 452 is blocked by the second resistor 456, and current no longer flows. Thus, the electric field adjustment amount in the area where the second resistor 456 is primarily located varies depending on the distance between the first resistor 452 and the second resistor 456.

[0056] <Plating treatment>

[0057] Next, the plating process in the plating module 400 of this embodiment is described in more detail. The substrate Wf is immersed in the plating solution in the cathode region 422 using the lifting mechanism 442, thereby exposing the substrate Wf to the plating solution. The plating module 400 can apply a voltage between the anode 430 and the substrate Wf in this state to perform a plating process on the plated surface Wf-a of the substrate Wf. In addition, in one embodiment, the plating process is performed while the substrate holder 440 is rotated using the rotating mechanism 448. Through the plating process, a conductive film (plating film) is deposited on the plated surface Wf-a of the substrate Wf.

[0058] The control module (controller) 800 of this embodiment can improve the uniformity of the coating thickness distribution across the substrate Wf by controlling the drive mechanism 451 to adjust the resistor 450 (the distance between the first resistor component 452 and the second resistor component 456). As an example, the resistor 450 is adjusted using the drive mechanism 451 before the start of the plating process. Alternatively, as an example, the resistor 450 is adjusted using the drive mechanism 451 in real time during the plating process based on the value detected by the sensor 460.

[0059] Figure 8 4 is a flowchart showing an example of a method for setting an operation plan of the resistor 450, the anode mask 426, and the shield 470 based on the control module 800. As an example, Figure 8 The method shown is executed when processing a new batch of substrates. In addition, the control module 800 can also set only a portion of the action plans of the resistor 450, the anode cover 426, and the shield 470. Here, the action plan of the resistor 450 is a processing plan that represents the position of the second resistor component 456 in the vertical direction, that is, the distance between the first resistor component 452 and the second resistor component 456. In addition, the action plan of the anode cover 426 is a processing plan that represents the opening size of the anode cover 426. In addition, the action plan of the shield 470 is a processing plan that represents the forward and backward position of the shield 470. In addition, instead of setting the action plan through the control module 800 of the plating device 1000, it is also possible to set it through a computer outside the plating device 1000 and send it to the plating device 1000.

[0060] exist Figure 8In the example shown, first, the control module 800 obtains the resist pattern of the substrate Wf to be processed (step S110). The resist pattern refers to the pattern of the resist layer formed on the plated surface Wf-a so that the desired plating pattern is formed by the plating process. The acquisition of the resist pattern can also be carried out by detecting the substrate Wf by a sensor provided in the plating device 1000. As an example, the plating device 1000 can also be provided with a camera that shoots the plated surface Wf-a of the substrate Wf, etc., which is not shown in the figure. Moreover, the control module 800 can also obtain the shooting data detected by the shooting sensor and obtain the resist pattern of the plated surface Wf-a by analyzing the shooting data. The acquisition of the resist pattern based on the shooting data can be carried out using a known method based on the shadow or feature points of the shooting data. In addition, as an example, the control module 800 can also obtain the resist pattern by external input via wired or wireless communication.

[0061] Then, the control module 800 sets the action plan of the resistor 450, the anode mask 426, and the shield 470 based on the obtained resist pattern (step S120). As a specific example, the control module 800 calculates the plating growth coefficient of each specified area of ​​the plated surface Wf-a of the substrate Wf based on the obtained resist pattern, and sets the action plan of each control object based on the calculated plating growth coefficient. Here, the plating growth coefficient is a parameter that represents the growth rate (formation rate) of the coating film of each of the resistor 450, the anode mask 426, and the shield 470 in the state of least shielding current. As an example, the plating growth coefficient can be the amount of coating film formed (e.g., nanometers) per unit time (e.g., 1 second). As a specific example, the control module 800 can calculate the aperture ratio of the resist layer in each specified area based on the resist pattern, and calculate the plating growth coefficient based on the calculated aperture ratio. This is because the area of ​​plating deposition and the amount of plating required to form a certain amount of plating film are large in the region with a large aperture ratio of the resist layer, and the growth rate of the plating film tends to be lower than that in the region with a small aperture ratio of the resist layer.

[0062] Figure 9 Schematic diagram showing a resist pattern formed on the plated surface Wf-a of a substrate Wf according to one embodiment. Figure 9In the figure, only the cross-shaped area A1 with a hatched line is formed with a resist opening, and the area A2 outside the cross-shaped area A1 becomes a non-opening area where no resist opening is formed. When the substrate Wf with such a resist pattern is subjected to plating treatment, no plating current flows through the area A2 which is a non-opening area, and plating current flows only through the area A1 which is an opening area. In addition, in the present embodiment, the plating treatment is performed while the substrate holder 440 is rotated using the rotating mechanism 448, and the plating current is concentrated in the cross-shaped convex area of ​​area A1, especially in the circumferential direction, which includes the area A2, and the plating film thickness becomes larger. In this specification, when viewed along the circumferential direction, the area where the resist opening is formed is referred to as the "central area B1" (in Figure 11 In the example shown, it is the inner circular area surrounded by the dot-dash line C1. In addition, when viewed in the circumferential direction, the area including both the area where the resist opening is formed (opening area A1) and the area where the resist opening is not formed (non-opening area A2) and the area where the area of ​​the opening area A1 is larger than the area of ​​the non-opening area A2 in the circumferential direction is referred to as the "middle area B2" (in the Figure 11 In the example shown, it is a circular area surrounded by dot-dash lines C1 and C2. Furthermore, when viewed in the circumferential direction, the area including both the opening area A1 and the non-opening area A2, where the area of ​​the opening area A1 is smaller than that of the non-opening area A2, is referred to as the "outer peripheral area B3" (in the example shown). Figure 11 In the example shown, it is a circular area surrounded by dot-dash lines C2 and C3. Figure 11 In the example shown, the center of the plated surface Wf-a is arranged in the order of central region B1, intermediate region B2, and peripheral region B3, with no resist opening formed on the peripheral side of peripheral region B3. However, the present invention is not limited to the above example, and any other resist pattern may be formed on the substrate Wf.

[0063] Here, the anode cover 426 or the shield 470 of the plating module 400 can appropriately adjust the formation speed of the plating film near the outer periphery of the plated surface Wf-a. Figure 9 When the substrate Wf shown is plated, the plating forming rate is relatively higher in the inner peripheral region (particularly the middle region B2 ) than near the outer peripheral edge, which may impair the uniformity of the thickness of the plated film.

[0064] In this regard, in the plating module 400 of this embodiment, the resistor 450 is configured with a second resistor component 456 in the form of an annular plate, and the electric field adjustment amount of the resistor 450 can be adjusted in the area where the second resistor component 456 is mainly arranged. As a result, the plating forming speed in the middle area B2 can be adjusted by adjusting the current flowing through the middle area B2. As an example, in Figure 9In the substrate Wf, when the plating forming speed of the middle region B2 surrounded by the dot-dash lines C1 and C2 is relatively high, the thickness of the plating film formed in the middle region B2 can be reduced by placing the second resistance component 456 close to the first resistance component 452. Figure 9 When the substrate Wf shown is subjected to the plating treatment, the uniformity of the thickness of the plated film can also be improved. In addition, the plating module 400 of the present embodiment is equipped with an anode cover 426 and a shield 470. Thus, for the intermediate region B2, the plating formation speed can be adjusted by rotating the first resistor component 452, and for the peripheral region B3, the plating formation speed can be adjusted by the anode cover 426 and the shield 470. Thus, by controlling the resistor 450, the anode cover 426, and the shield 470, the plating formation speed can be adjusted in each region of the substrate Wf, and the uniformity of the thickness of the plated film can be improved. In addition, the second resistor component 456 of the resistor 450 can also be determined based on the intermediate region B2 to determine the size, for example, to be substantially the same size as the intermediate region B2.

[0065] Figure 10 This is a flowchart showing an example of a method for setting an operation plan of the resistor 450, the anode mask 426, and the shield 470 in the plating process based on the control module 800. Figure 10 The method shown, instead of Figure 8 The method shown, or a modification by Figure 8 Alternatively, the control module 800 may set the operation pattern for only a portion of the resistor 450 , the anode mask 426 , and the shield 470 .

[0066] If the control module 800 starts the plating process (step S210), it obtains parameters related to the coating from the sensor 460 in real time (step S220). In this embodiment, as the substrate Wf rotates, the parameters related to the coating are detected by the sensor 460. In one embodiment, the parameters related to the coating are detected at multiple locations along the radial direction on the plated surface Wf-a. The control module 800 calculates the film thickness distribution of the coating on the plated surface Wf-a based on the value detected by the sensor 460 (step S230). Next, the control module 800 sets the action plan of the resistor 450, the anode cover 426, and the shield 470 based on the calculated film thickness distribution (step S240). The control module 800 repeats the processing of steps S220 to S240 to set the action plan of the control object until the plating process is completed (step S250). Then, the control module 800 controls the resistor 450, the anode cover 426, and the shield 470 based on the set action plan. In this manner, based on the parameters related to the plating film acquired from the sensor 460 , the operation plan of the resistor 450 and the like can be set or corrected during the plating process, thereby improving the uniformity of the thickness of the plating film.

[0067] <First Modification>

[0068] Figure 11 4 is a longitudinal sectional view schematically showing a resistor 450A in a state where the first resistor member 452A and the second resistor member 456 are separated in the first modification. Figure 12 : This is a longitudinal cross-sectional view of a resistor 450A schematically showing a state in which a first resistor component 452A and a second resistor component 456 are in contact with each other in the first modification. Regarding the resistor 450A of the first modification, the description of the parts that overlap with the resistor 450 of the above-mentioned embodiment is omitted. A groove 455 that is annular when viewed from below is formed on the lower surface of the first resistor component 452A in the resistor 450A of the first modification, and the second resistor component 456 can be accommodated in the groove 455. In one embodiment, as Figure 12 As shown, when the second resistor member 456 contacts the first resistor member 452 and is disposed in the groove 455, the lower surface 452-a of the first resistor member 452 and the lower surface 456-a of the second resistor member 456 are arranged on the same plane. However, this is not limited to the above example. The groove 455 of the first resistor member 452 can be formed shallower or deeper than the thickness Th2 of the second resistor member 456. Thus, the first resistor member 452A in the first modified example is formed with a groove 455 capable of accommodating at least a portion of the second resistor member 456. This allows the thickness Th2 of the second resistor member 456 to be increased within the limited space within the plating tank 410, or the range within which the second resistor member 456 can move vertically is increased.

[0069] <Second Modification>

[0070] Figures 13 to 15 This is an enlarged, schematic longitudinal cross-sectional view of a resistor 450B in a second modified example, showing the first resistor component 452 and the second resistor component 456B separated by first to third distances. Regarding the resistor 450B in the second modified example, the description of the portions overlapping with the resistor 450 in the aforementioned embodiment is omitted. The second resistor component 456B in the resistor 450B in this modified example has multiple protrusions 458. These protrusions 458 are formed at locations where the first through-holes 453 of the first resistor component 452 are formed, when viewed from above, and are insertable into the first through-holes 453. In one example, the multiple protrusions 458 include a first protrusion 458a having a first height h1, a second protrusion 458b having a second height h2 lower than the first height h1, and a third protrusion 458c having a third height h3 lower than the second height h2. However, the multiple protrusions 458 may include two or more types of protrusions having different heights, or may all have the same height.

[0071] In the second modified example, the drive mechanism 451 for vertically moving the second resistor member 456B includes a cam 451B disposed within the coating tank 410 and a drive source (not shown) configured to rotate the cam 451B. A known mechanism such as a motor can be used as the drive source. In the second modified example, the cam 451B disposed within the coating tank 410 rotates, thereby vertically moving the second resistor member 456B to adjust the distance between the first resistor member 452 and the second resistor member 456B.

[0072] The resistor 450B of the second modified example can change the electric field adjustment amount of the region where the second resistor 456B is mainly arranged by changing the distance between the first resistor 452 and the second resistor 456B, similarly to the above-mentioned embodiment. Figure 13 As shown in FIG. 1 , when the first resistor component 452 and the second resistor component 456B are sufficiently separated, the current passing through the plurality of first through-holes 453 of the first resistor component 452 is hardly blocked by the second resistor component 456. However, if the distance between the first resistor component 452 and the second resistor component 456 is shortened, the distance between the plurality of first through-holes 453 of the first resistor component 452 and the plurality of protrusions 458 formed on the second resistor component 456B is shortened, and the current is less likely to flow through the first through-holes 453. In addition, in the second modification, the plurality of protrusions 458 have different heights h1 to h3, as shown in FIG. Figure 14As shown, if the first resistor 452 and the second resistor 456 are brought closer together, the first protrusion 458a having a higher height is first inserted into the first through hole 453. As a result, current does not flow or does not easily flow through the first through hole 453 into which the first protrusion 458a is inserted. Figure 15 As shown, second protrusion 458b is inserted into first through-hole 453. Consequently, current does not flow, or is less likely to flow, through first through-hole 453 in which first protrusion 458a is inserted, and first through-hole 453 in which second protrusion 458b is inserted. Thus, the resistor 450B of the second modified example can insert first to third protrusions 458a to 458c into the first through-hole 453 according to the distance between first resistor component 452 and second resistor component 456, thereby preventing current from flowing through the first through-hole 453. Therefore, the resistor 450B of the second modified example can more finely adjust the electric field in the region primarily where second resistor component 456 is located.

[0073] Other Modifications

[0074] The plating module 400 in the above-described embodiment is configured so that the plated surface Wf-a of the substrate Wf faces downward during the plating process. However, this is not limited to the above example. As an example, the plated surface Wf-a of the substrate Wf may also be configured so that the plated surface Wf-a and the anode 430 are horizontally opposed.

[0075] The present invention can also be described in the following aspects.

[0076] [Form 1] According to Form 1, a plating device is proposed, which comprises: a plating tank; a substrate holder configured to hold a substrate; an anode arranged in the plating tank in a manner opposite to the substrate held by the above-mentioned substrate holder; and a resistor arranged between the above-mentioned substrate holder and the above-mentioned anode for adjusting the electric field, the above-mentioned resistor comprising: a first resistor component, and a second resistor component arranged between the above-mentioned first resistor component and the above-mentioned substrate holder or between the above-mentioned first resistor component and the above-mentioned anode, the above-mentioned resistor component is formed with a plurality of first through holes opening on the above-mentioned substrate holder side and the above-mentioned anode side, at least a portion of the above-mentioned plurality of first through holes overlaps with the above-mentioned second resistor component in a manner that the above-mentioned anode side cannot be visually identified when observing the anode side from the substrate side, and the above-mentioned second resistor component is configured so that the distance from the above-mentioned first resistor component is variable.

[0077] According to the first aspect, a plating apparatus capable of improving the uniformity of the thickness of a plated film formed on a plated object can be proposed.

[0078] [Aspect 2] According to aspect 2, in addition to aspect 1, the second resistor member is annular when the anode side is viewed from the substrate holder side. According to aspect 2, the thickness of the plating film can be adjusted, particularly in the annular region.

[0079] [Mode 3] According to Mode 3, in addition to Mode 1 or 2, a plurality of second through holes opening on the substrate holder side and the anode side are formed in the second resistor member.

[0080] [Form 4] According to Form 4, based on Form 3, the plurality of second through holes include: a plurality of through holes formed on a first reference circle, and a plurality of through holes formed on a second reference circle that is concentric with the first reference circle and has a different diameter.

[0081] [Mode 5] According to Mode 5, in addition to Modes 1 to 4, the second resistor member is configured to be movable to a position away from the first resistor member and to a position in contact with the first resistor member such that at least a portion of the plurality of first through-holes is blocked by the second resistor member. According to Mode 5, by bringing the first resistor member into contact with the second resistor member, at least a portion of the plurality of first through-holes of the first resistor member can be blocked.

[0082] [Mode 6] According to Mode 6, in addition to Modes 1 to 5, a groove capable of accommodating at least a portion of the second resistance member is formed in the first resistance member. According to Mode 6, the thickness of the second resistance member can be increased, or the movable range of the second resistance member can be expanded.

[0083] [Form 7] According to Form 7, in addition to Forms 1 to 6, the second resistor member includes a plurality of protrusions formed at locations where the plurality of first through-holes are formed on the first resistor member when viewing the anode side from the substrate holder, and adapted to be inserted into the plurality of first through-holes. The plurality of protrusions include a first protrusion having a first height and a second protrusion having a second height lower than the first height. According to Form 7, the resistor member can be adjusted to a state where the first protrusions are inserted into a portion of the plurality of first through-holes, or a state where the first protrusions are inserted into a portion of the plurality of first through-holes and the second protrusions are inserted into another portion of the plurality of first through-holes.

[0084] [Aspect 8] According to aspect 8, in addition to aspects 1 to 7, the plating apparatus includes a drive mechanism configured to move the second resistance member to adjust the distance between the first resistance member and the second resistance member. According to aspect 8, the distance between the first resistance member and the second resistance member can be adjusted by the drive mechanism.

[0085] [Aspect 9] According to aspect 9, based on aspect 8, the drive mechanism includes a pneumatic actuator disposed outside the plating tank.

[0086] [Form 10] According to Form 10, based on Form 8, the drive mechanism includes: a cam arranged in the plating tank; and a drive source configured to rotate the cam.

[0087] [Aspect 11] According to aspect 11, in addition to aspects 8 to 10, the plating apparatus includes a controller that controls the drive mechanism based on the resist pattern of the substrate held by the substrate holder. According to aspect 11, the distance between the first resistance member and the second resistance member can be controlled by the controller.

[0088] [Aspect 12] According to aspect 12, in addition to aspect 11, the plating apparatus includes an anode cover, the anode cover being disposed between the anode and the resistor, and having an anode opening extending through the anode and substrate holder, the anode opening being adjustable in size, and the controller controlling the drive mechanism and the anode cover based on the resist pattern. According to aspect 12, the distance between the first resistor component and the second resistor component, as well as the size of the anode opening, can be controlled by the controller.

[0089] [Form 13] According to Form 13, based on Forms 1 to 12, the substrate holding frame is configured to hold the substrate in the plating tank with the plated surface facing downward, and the second resistor component is arranged between the first resistor component and the anode.

[0090] Above, the embodiments of the present invention have been described, but the embodiments of the above invention are for easy understanding of the present invention and do not limit the present invention. As long as the present invention does not depart from its main purpose, it can be changed and improved, and its equivalent structure is of course included in the present invention. In addition, within the scope of at least a part of the above-mentioned problem or within the scope of at least a part of the effect, any combination of the embodiments and modifications can be carried out, and any combination or omission of the various constituent elements described in the claims and the specification can be carried out.

[0091] Description of Reference Numerals

[0092] Wf-a...plated surface; Wf...substrate; 400...plating module; 410...plating tank; 420...diaphragm; 422...cathode region; 424...anode region; 430...anode; 440...substrate holder; 442...lifting mechanism; 448...rotating mechanism; 450, 450A, 450B...resistor; 451...driving mechanism; 451B...cam; 452, 452A...first resistor component; 453...first through-hole; 455...groove; 456, 456B...second resistor component; 457...second through-hole; 458, 458a~458c...protrusion; 460...sensor; 470...shield; 480...paddle; 482...paddle stirring mechanism; 800...control module; 1000...plating device.

Claims

1. A plating device, wherein: have: plating tank; a substrate holder configured to hold a substrate; an anode arranged in the plating tank so as to face the substrate held by the substrate holder; and A resistor is disposed between the substrate holder and the anode and is used to adjust the electric field. The resistor includes a first resistor member and a second resistor member disposed between the first resistor member and the substrate holder or between the first resistor member and the anode. The first resistor member includes a plurality of first through holes that open on the substrate holder side and the anode side, and at least a portion of the plurality of first through holes overlaps with the second resistor member in such a manner that the anode side cannot be visually recognized when the anode side is viewed from the substrate side. The second resistance member is configured so that a distance therebetween from the first resistance member is variable.

2. The plating device according to claim 1, wherein The second resistance member has an annular shape when the anode side is viewed from the substrate holder side.

3. The plating device according to claim 1, wherein The second resistance member is formed with a plurality of second through holes that are open on the substrate holder side and the anode side.

4. The plating device according to claim 3, wherein: The plurality of second through holes include a plurality of through holes formed on a first reference circle and a plurality of through holes formed on a second reference circle that is concentric with the first reference circle and has a different diameter.

5. The plating device according to claim 1, wherein The second resistance member is movable to a position away from the first resistance member and to a position in contact with the first resistance member where at least a portion of the plurality of first through holes is blocked by the second resistance member. The plating device according to claim 1 , wherein: The first resistance member is formed with a groove capable of accommodating at least a portion of the second resistance member.

7. The plating device according to claim 1, wherein The second resistor member has a plurality of protrusions, and when the anode side is viewed from the substrate holder side, the plurality of protrusions are formed at positions of the first resistor member where the plurality of first through holes are formed and can be inserted into the plurality of first through holes. The plurality of convex portions include a first convex portion having a first height and a second convex portion having a second height lower than the first height.

8. The plating device according to claim 1, wherein The plating apparatus includes a driving mechanism configured to move the second resistance member to adjust the distance between the first resistance member and the second resistance member.

9. The plating device according to claim 8, wherein The driving mechanism includes a pneumatic actuator disposed outside the plating tank.

10. The plating device according to claim 8, wherein The driving mechanism includes a cam disposed in the plating tank and a driving source configured to rotate the cam.

11. The plating device according to claim 8, wherein The plating apparatus includes a controller configured to control the driving mechanism based on the resist pattern of the substrate held by the substrate holder.

12. The plating device according to claim 11, wherein The plating device includes an anode cover, which is arranged between the anode and the resistor and has an anode opening that passes through the anode side and the substrate holder side, and the size of the anode opening can be adjusted. The controller controls the driving mechanism and the anode mask based on the resist pattern.

13. The plating device according to any one of claims 1 to 12, wherein The substrate holding frame is configured to hold the substrate in the plating tank with the plated surface facing downward. The second resistance member is arranged between the first resistance member and the anode.

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