Flexible temperature field sensor

Abstract

The invention, which relates to the technical field of the sensor, discloses a flexible temperature field sensor comprising a thin film tape and a plurality of voltage-controlled temperature measurement gate chips. A copper foil circuit is covered on the film belt; the film strip is arranged on the to-be-detected area; the plurality of voltage-controlled temperature measurement gate chips are arranged on the copper foil circuit of the film strip, and each voltage-controlled temperature measurement gate chip corresponds to one temperature measurement point of the to-be-measured area; the plurality of voltage-controlled temperature measurement gate chips are connected in sequence; and sequentially triggering the voltage-controlled temperature measurement gate chips arranged at the positions of the temperature measurement points by adopting trigger voltage. The temperature measuring adaptability of the sensor in a narrow space can be improved, the construction cost is reduced, and the installation is simple.

Description

Technical Field

[0001] The present application relates to the field of sensor technology, and in particular to a flexible temperature field sensor. Background Art

[0002] In existing research, multi-point temperature measurement of temperature fields generally uses thermosensitive materials (resistance type, thermocouple type), optical fiber type, and infrared type temperature sensors to achieve multi-point temperature field measurement. The following are the shortcomings of each method:

[0003] When measuring multiple temperature points with thermistor and thermocouple sensors, the increasing number of sensors requires a large number of cables to transmit the temperature signals, resulting in complex and bulky wiring. In confined, long-distance, multi-point measurement environments, such as long-distance electric heating pipe construction, the sheer number of cables can be prohibitive. Using a communication bus approach, while the digital temperature signals from multiple measurement points are transmitted via addressing, eliminating the need for additional bus communication cables, each measurement point requires a digital-to-analog conversion circuit. This makes high-density deployment of temperature measurement points impossible within confined spaces within high-temperature environments. For example, the DS18B20, a commonly used communication bus temperature control chip, is a bus-mode temperature measurement chip. However, due to current limitations triggered by pull-up resistors, it cannot be connected in parallel to multiple temperature sensors. Its performance limits the maximum number of DS18B20s that can be connected in parallel. Temperature measurement in single-line queuing and inspection mode can be slow, leading to communication interruptions. Furthermore, the chip's operating current is in the milliampere range, and since parallel pull-up resistors must be small enough to provide sufficient current, the chip's own power generation also affects temperature measurement.

[0004] Fiber optic temperature sensors suffer from optical signal attenuation (typical loss >3dB) due to the refractive index difference between the flexible substrate (such as polydimethylsiloxane (PDMS)) and the optical fiber. Due to the high rigidity of the optical fiber, repeated bending can easily lead to cladding rupture or damage to the grating structure (the minimum bending radius is approximately 5cm). The low spatial resolution makes it difficult to capture tiny hot spots (such as chip-level hot spots). Fiber heat conduction relies on the fiber coating material (such as polyimide), and the thermal response time is often on the order of seconds, making it unsuitable for dynamic process monitoring. The use of multi-channel multiplexing systems is complex, the spectral detection system is expensive, and high-density deployment is impractical.

[0005] Infrared temperature sensors can detect temperatures at multiple points, and are particularly sensitive in forming temperature field images, clearly demonstrating the impact of the temperature field on energy transfer. However, the imaging principle of infrared temperature measurement requires the cooperation of an optical system, and infrared temperature sensors are limited to measuring the temperature of surfaces facing the light and cannot bypass obstacles. For measuring the temperature inside an enclosed space, deploying multiple infrared temperature sensors is not feasible, and the displacement conversion within moving parts is even less suitable for infrared imaging. The rigid materials of infrared optics and the rigid physical dimensions of the imaging focal length make them incompatible with any flexible manufacturing method, making flexible layout and construction impossible and resulting in high manufacturing costs.

[0006] There are also sensors made of a variety of new temperature-sensitive materials, such as conductive polymers, carbon-based materials, and metal nanomaterials. They cannot be connected in parallel or flexibly extended in multi-point temperature field measurements, nor can they be arranged at a high density without increasing the number of signal leads.

[0007] In summary, there are various methods for using existing flexible temperature field sensors to detect temperature along production pipelines, equipment, or robot bodies. However, the main drawbacks are: (1) When using existing temperature sensors to measure multi-point temperature fields, the layout of multi-point temperature measurement signal cables is large and complex, making system installation difficult. In small spaces or inside high-temperature moving parts, it is impossible to lay out the measurement temperature field at a high density. (2) Traditional multi-point temperature measurement methods, such as hardware upgrades for adding or reducing temperature measurement points, have poor shrinkage and scalability and cannot be freely extended in parallel. Summary of the Invention

[0008] The purpose of this application is to provide a flexible temperature field sensor that can improve the adaptability of the sensor in measuring temperature in a small space, reduce construction costs, and simplify installation.

[0009] To achieve the above objectives, this application provides the following solutions:

[0010] The present application provides a flexible temperature field sensor, comprising: a thin film strip and a plurality of voltage-controlled temperature measurement gate chips;

[0011] The film tape is covered with a copper foil circuit;

[0012] The film strip is arranged on the area to be measured; a plurality of the voltage-controlled temperature measurement gate chips are arranged on the copper foil circuit of the film strip, and each voltage-controlled temperature measurement gate chip corresponds to a temperature measurement point of the area to be measured; the plurality of the voltage-controlled temperature measurement gate chips are connected in sequence;

[0013] A trigger voltage is used to sequentially trigger the voltage-controlled temperature measurement gate chip set at each temperature measurement point.

[0014] Optionally, the copper foil circuit includes a ground bus, an output bus, a power supply bus and a trigger bus;

[0015] The ground bus, output bus, power supply bus and trigger bus are all used to form a connection loop with multiple voltage-controlled temperature measurement gate chips; the trigger bus is also used to input a periodic trigger voltage.

[0016] Optionally, each of the voltage-controlled temperature measurement gate chips includes: an analog electronic switch, a diode, a thermistor, a first resistor, a second resistor, and a third resistor;

[0017] One end of the first resistor is connected to the trigger end of the analog electronic switch; one end of the second resistor is connected to the enable end of the analog electronic switch; the other end of the second resistor is connected to the power supply bus; the cathode of the diode is respectively connected to the other end of the first resistor and one end of the third resistor, and the other end of the third resistor is connected to the ground end of the analog electronic switch; the ground end of the analog electronic switch is connected to the ground bus; one end of the thermistor is connected to the normally closed end of the analog electronic switch.

[0018] Optionally, the other end of the first resistor in the i-th voltage-controlled temperature measurement gate chip is connected to the anode of the diode in the (i+1)-th voltage-controlled temperature measurement gate chip;

[0019] The normally open end of the analog electronic switch in the i-th voltage-controlled temperature measurement gate chip is connected to the other end of the thermistor in the i+1-th voltage-controlled temperature measurement gate chip; the common end of the analog electronic switch in the j-th voltage-controlled temperature measurement gate chip is connected to the output bus, where j is an odd number; the common end of the analog electronic switch in the j-th voltage-controlled temperature measurement gate chip is connected to the ground bus;

[0020] The other end of the thermistor in the first voltage-controlled temperature measurement gate chip is connected to the ground bus; the anode of the diode in the first voltage-controlled temperature measurement gate chip is connected to the trigger bus.

[0021] Optionally, the film tape is a polyimide film tape.

[0022] Optionally, silica gel is coated on the side of the film strip opposite to the side where the voltage-controlled temperature measuring gate chip is arranged.

[0023] Optionally, the film strip has a thickness of 0.1 mm to 0.2 mm.

[0024] Optionally, the film tape has a temperature resistance of -50°C to 300°C.

[0025] Optionally, the corrosion resistance of the film strip is 1.0H.

[0026] Optionally, a plurality of the voltage-controlled temperature measurement gate chips are arranged on the copper foil circuit of the film strip at set intervals.

[0027] According to the specific embodiments provided in this application, this application has the following technical effects:

[0028] This application provides a flexible temperature field sensor that covers a thin film strip with a copper foil circuit. By placing multiple voltage-controlled temperature measurement gate chips on the copper foil circuit of the thin film strip, the number of voltage-controlled temperature measurement gate chips on the thin film strip can be flexibly adjusted while reducing installation difficulty. By interconnecting the voltage-controlled temperature measurement gate chips, multi-point temperature measurement in the temperature field can be achieved, and temperatures can be detected sequentially. This solves the problem of large and complex wiring and construction difficulties when traditionally deploying multiple temperature sensors, thereby reducing construction costs and improving the adaptability of flexible temperature sensors for measuring temperature fields in confined spaces. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0030] Figure 1 A schematic diagram of a portion of a film strip provided in one embodiment of the present application;

[0031] Figure 2 A schematic diagram of the packaging of a voltage-controlled temperature measurement gate chip provided in one embodiment of the present application;

[0032] Figure 3 Schematic diagram of a flexible temperature field sensor provided in one embodiment of the present application;

[0033] Figure 4 This is a schematic diagram of the structure of a flexible temperature field sensor provided in one embodiment of the present application.

[0034] Reference numerals: first resistor R1, second resistor R2, third resistor R3, thermistor NTC, diode D, analog electronic switch S, ground bus G, output bus AO, power supply bus VCC, trigger bus V1. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0036] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0037] Flexible temperature field sensors are a new type of sensor capable of sensing and measuring temperature distribution within the internal structures of long-distance, confined, and high-temperature equipment. They are flexible, lightweight, extendable to any length, capable of high-density multi-point measurement, and require no additional sensor leads. They demonstrate unique advantages in chemical production, the interiors of intelligent robotic arms, and industrial testing. In recent years, with the rapid development of intelligent manufacturing, artificial intelligence, and wearable technology, the demand for flexible temperature field measurements has become increasingly prominent. Existing multi-point temperature field measurement sensors are limited in their application within complex, confined, and long-distance internal spaces, particularly within high-temperature, confined environments. Flexible temperature field sensors offer a new solution to these challenges.

[0038] In an exemplary embodiment, a flexible temperature field sensor is provided, comprising a thin film strip and a plurality of voltage-controlled temperature measurement gate chips.

[0039] like Figure 1 As shown, a thin film strip is coated with a copper foil circuit. The thin film strip is placed over the area to be measured. Multiple voltage-controlled temperature measurement gate chips are mounted (e.g., welded, clipped, etc.) on the copper foil circuit of the thin film strip, with each voltage-controlled temperature measurement gate chip corresponding to a temperature measurement point in the area to be measured. The multiple voltage-controlled temperature measurement gate chips are connected in sequence. A trigger voltage is applied to sequentially trigger the voltage-controlled temperature measurement gate chip located at each temperature measurement point.

[0040] In order to further simplify the circuit connection, the present application can set the ground bus G, output bus AO, power bus VCC and trigger bus V1 in the copper foil circuit. The ground bus G, output bus AO, power bus VCC and trigger bus V1 are used to form a connection loop with multiple voltage-controlled temperature measurement gate chips. The trigger bus V1 is also used to input a periodic trigger voltage. Among them, Figure 2 As shown, each voltage-controlled temperature measurement gate chip includes an analog electronic switch S, a diode D, a thermistor NTC, a first resistor R1, a second resistor R2 and a third resistor R3.

[0041] One end of the first resistor R1 is connected to the trigger terminal of the analog electronic switch S. One end of the second resistor R2 is connected to the enable terminal of the analog electronic switch S, and the other end of the second resistor R2 is connected to the power supply bus VCC. The cathode of the diode D is connected to the other end of the first resistor R1 and one end of the third resistor R3, respectively. The other end of the third resistor R3 is connected to the ground terminal of the analog electronic switch S. The ground terminal of the analog electronic switch S is connected to the ground bus G. One end of the thermistor NTC is connected to the normally closed terminal of the analog electronic switch S.

[0042] The multiple voltage-controlled temperature measurement gate chips can be sequentially connected in the following manner: the other end of the first resistor R1 in the i-th voltage-controlled temperature measurement gate chip is connected to the anode of the diode D in the i+1-th voltage-controlled temperature measurement gate chip. The normally-open end of the analog electronic switch S in the i-th voltage-controlled temperature measurement gate chip is connected to the other end of the thermistor NTC in the i+1-th voltage-controlled temperature measurement gate chip. The common end of the analog electronic switch S in the j-th voltage-controlled temperature measurement gate chip is connected to the output bus AO, where j is an odd number. The common end of the analog electronic switch S in the j+1-th voltage-controlled temperature measurement gate chip is connected to the ground bus G.

[0043] The other end of the thermistor NTC in the first voltage-controlled temperature measurement gate chip is connected to the ground bus G. The anode of the diode D in the first voltage-controlled temperature measurement gate chip is connected to the trigger bus V1.

[0044] For example, a voltage-controlled temperature measurement gate chip uses a DFN-8 package, with two rows of parallel flat pins on the bottom of the packaged chip, for a total of eight pins. DFN-8 is a surface mount integrated circuit package. One end of the first resistor R1 is connected to the trigger terminal of the analog electronic switch S, and the other end of the first resistor R1 serves as pin 1 of the voltage-controlled temperature measurement gate chip. One end of the second resistor R2 is connected to the enable terminal of the analog electronic switch S, and the other end of the second resistor R2 serves as pin 2 of the voltage-controlled temperature measurement gate chip and is connected to the power supply bus VCC. The cathode of the diode D is connected to the other end of the first resistor R1 and one end of the third resistor R3, respectively, and the anode of the diode D serves as pin 4 of the voltage-controlled temperature measurement gate chip. The other end of the third resistor R3 is connected to the ground terminal of the analog electronic switch S. The ground terminal of the analog electronic switch S serves as pin 6 of the voltage-controlled temperature measurement gate chip and is connected to the ground bus G. One end of the thermistor NTC is connected to the normally closed terminal of the analog electronic switch S, and the other end of the thermistor NTC serves as pin 5 of the voltage-controlled temperature measurement gate chip. The common end of the analog electronic switch S serves as pin 7 of the voltage-controlled temperature measurement gate chip, and the normally open end of the voltage-controlled temperature measurement gate chip serves as pin 8 of the voltage-controlled temperature measurement gate chip.

[0045] The flexible temperature field sensor provided in this application can be welded and arranged in series and parallel on the flexible soft belt film, and a high-density integrated voltage-controlled temperature measurement gate chip can be used to measure the temperature of different positions in sequence and continuously, thereby achieving the function of multi-point temperature field detection along the line, plane, and space through which the film belt passes.

[0046] As an optional embodiment, the film tape is a polyimide film tape. To further improve the film tape's heat resistance and reduce the impact of temperature on the detection performance of the voltage-controlled temperature measurement gate chip installed on the film tape, silicone can be coated on the side of the film tape opposite the voltage-controlled temperature measurement gate chip. This process creates a military-grade polyimide tape with a thickness of 0.1mm-0.2mm. This configuration allows the film tape to have a temperature resistance of -50°C to 300°C and a corrosion resistance of 1.0H. The film tape can be coated with high-temperature silicone to achieve excellent flexibility, heat resistance, and moisture and water insulation properties.

[0047] For example, to improve the film's ductility and reduce the effect of the film's thickness on the temperature sensed by the voltage-controlled temperature-measuring gate chip, the film's thickness can be 0.1 mm to 0.2 mm. Multiple voltage-controlled temperature-measuring gate chips can be soldered to the film's copper foil circuit at predetermined intervals.

[0048] For example, a polyimide film strip covered with a copper foil circuit serves as the base material for the flexible skeleton. The width of the film strip can be 5mm, and the length can be adjusted according to the area to be measured. Multiple voltage-controlled temperature measurement gate chips are welded to the copper foil circuit of the film strip to form a voltage-controlled temperature measurement gate integrated circuit. Four lead pads are provided at one end of the film strip, respectively connected to the ground bus G, the output bus AO, the power bus VCC, and the trigger bus V1. Temperature acquisition of multiple temperature fields can be completed via a four-wire connection to a host computer. The spacing and number of voltage-controlled temperature measurement gate chips on the film strip can be adjusted according to actual needs. Increasing the number of voltage-controlled temperature measurement gate chips does not require additional leads. Increasing or decreasing the spacing between the voltage-controlled temperature measurement gate chips allows for free adjustment of the temperature measurement density of the flexible temperature field sensor.

[0049] The temperature field of the area to be measured using the flexible temperature field sensor in the above embodiment can be linear (such as the temperature field on a tank) or spatially multi-point curved / spiral (such as the temperature field on a long-distance temperature-controlled pipeline, the temperature field on a spherical reactor, and the internal space of an intelligent machine). This enables the sensing of temperature levels at multiple points or over a large area within the space, as well as real-time temperature field monitoring technology. This solves the problems of traditional multi-point temperature sensor wiring being bulky and complex, prohibitive for construction, high cost, and inability to adapt to narrow, high-temperature spaces. The temperature field can reflect the temperature differences at multiple points in the area to be measured, that is, the relative temperature of one area relative to another. This is equivalent to an infrared imaging temperature sensor, which can collect temperature field data and analyze energy sources and energy transfer directions.

[0050] In another exemplary embodiment, the principle of the flexible temperature field sensor is described in combination with the structure and internal connection method of the flexible temperature field sensor in the above embodiment. Figure 3As shown in the figure, the first four voltage-controlled temperature measurement gate chips set in the flexible temperature field sensor are used as an example for explanation. T1, T2, T3 and T4 are Figure 3 The codes of the voltage-controlled temperature-measuring gate chips from right to left in the flexible temperature field sensor are shown in FIG. In this embodiment, the diode D in the voltage-controlled temperature-measuring gate chip is a germanium diode.

[0051] Pin 2 of chips T1, T2, T3, and T4 is connected to the power bus VCC (supply voltage is +5V). Pin 6 of chips T1, T2, T3, and T4 is connected to the ground bus G. After power is applied to the power bus VCC and ground bus G, the analog electronic switch S is in an enabled standby state. Pin 1 of chips T1, T2, T3, and T4 is connected in series with pin 4 of the next chip, and pin 5 of chips T1, T2, T3, and T4 is connected in series with pin 8 of the next chip. Pin 4 of T1 is connected to the trigger bus V1. Pin 5 of T1 is connected to the ground bus G. Pin 7 of chips T1 and T3 in odd-numbered positions is connected to the output bus AO. Pin 7 of chips T2 and T4 in odd-numbered positions is connected to the ground bus G. This connection method can be repeated for TN chips. When the trigger voltage VF on the trigger bus V1 is lower than the conduction voltage of diode D (0.3V in this embodiment), diode D of T1 does not conduct, and the analog electronic switch S in T1 is not triggered. The output bus AO is connected to the normally closed end of the analog electronic switch S inside the chip and the NTC of T1 through pin 7 of T1. The other end of the NTC is connected to the ground bus G. At this time, the resistance between the output bus AO and the ground bus G is the resistance generated by the NTC of T1 and the normally closed end of the analog electronic switch S. In the embodiment provided in this application, the NTC is a 10KΩ thermistor NTC. Temperature changes have a great influence on the resistance. The on-resistance of the normally closed end of the analog electronic switch S (generally 2Ω) can be ignored or compensated by sampling the host computer, thereby completing the reading of the NTC temperature of the T1 chip. The output bus AO forms a voltage value by synthesizing the NTC voltage of T1, and then the synchronous temperature value of the T1 measurement point can be calculated by the host computer algorithm.

[0052] When the trigger voltage VF exceeds 0.3V, diode D in T1 conducts, and the trigger voltage is applied to the trigger terminal of analog electronic switch S in T1. This triggers T1's analog electronic switch S, disconnecting its common terminal from the normally closed terminal and connecting its common terminal to the normally open terminal. At this point, the NTC in chip T1 is disconnected, while the NTC in chip T2 is connected to pin 7 of T1 via pin 5 of T2 and pin 8 of T1, thereby connecting to output bus AO. Meanwhile, the NTC in chip T2 is already connected to ground bus G via pin 7 of T2's normally closed analog electronic switch S. Therefore, when the trigger voltage VF is slightly higher than 0.3V, once T1's analog electronic switch S is triggered, the resistance between output bus AO and ground bus G is represented by the resistance of T2's NTC, not T1's NTC. Similarly, the internal resistance of the switching points of analog electronic switches S in T1 and T2 (generally no more than 5Ω) can be ignored or compensated for using the host computer.

[0053] When the trigger voltage VF is slightly higher than 1.4V, diode D in T2 conducts, and the trigger voltage is applied to the trigger terminal of T2's analog electronic switch S. This triggers T2's analog electronic switch S, disconnecting the common terminal from the normally closed terminal and connecting the common terminal to the normally open terminal. At this point, the NTC in chip T2 is disconnected, and the NTC in chip T3 is connected to pin 7 of T2 and ground bus G via pin 5 of T3 and pin 8 of T2. Meanwhile, the NTC in chip T3 is connected to the output bus AO via pin 7 of T3's analog electronic switch S, which is normally closed. Therefore, when the trigger voltage VF exceeds a certain value of 0.6V, once T2's analog electronic switch S is triggered, the resistance between output bus AO and ground bus G is represented by the resistance of T3's NTC, not that of T2's NTC. Similarly, the internal resistance of the switch nodes of T2 and T3's analog electronic switches S (generally no more than 5Ω) can be ignored or compensated for using the host computer.

[0054] By analogy, when the trigger voltage VF continues to rise, every increase of 0.3V (as an example, in actual application, it can be determined according to the type of diode D in the voltage-controlled temperature measurement gate chip) will trigger the next voltage-controlled temperature measurement gate chip Tn, and then transfer the resistance performance of the NTC in a chip between the output bus AO and the ground bus G in turn. Assume that when the trigger voltage VF changes from 0 to 24V in a continuous cycle, 80 Tn chips can be triggered. When the chipset is triggered by a sawtooth wave periodic voltage, the resistance voltage between the output bus AO and the ground bus G is the voltage generated by the NTC temperature resistance that appears alternately in all the voltage-controlled temperature measurement gate chips and is the only one that does not appear at the same time. This voltage curve (i.e. Figure 3 AO curve) period and trigger voltage waveform (ie Figure 3The VF sawtooth waveform in the figure matches the period of the AO voltage. The voltage fluctuation generated within one period of the AO voltage is the NTC temperature voltage fluctuation of all the temperature measurement points of the voltage-controlled temperature measurement gate chip, thereby realizing the voltage-controlled continuous temperature measurement function of the sequential triggering of the diode D. The voltage curve value can be synchronously restored and recorded by the host computer to record the temperature value corresponding to each trigger voltage point. The curve can also be used to analyze the target object being measured, the temperature field along the length, plane extension, spatial distribution point, and the direction of energy transfer, similar to the imaging effect of the temperature field by an infrared thermometer. The structural diagram of the flexible temperature field sensor is shown in the figure below. Figure 4 shown.

[0055] In all embodiments provided in this application, the voltage-controlled temperature measurement gate chip in DFN-8 (4mm×5mm) package has high temperature resistance and military-grade performance, fast response speed and good sensitivity, a temperature measurement range of -50℃—150℃, and excellent temperature measurement accuracy.

[0056] The flexible temperature field sensor in the above embodiment is a flexible skeleton composed of a polyimide film tape covered with a copper foil circuit. Several DFN-8 package structure chips are welded on the copper-clad circuit of the skeleton to form a voltage-controlled temperature measurement gate module. The temperature detection circuit is integrated and temperature field detection and collection are completed with a flexible 4-wire bus. The temperature detection range is wide, the long-term stability of the sensor is improved, the manufacturing cost is reduced, the installation is simple, and online, orderly, real-time, and sequential temperature detection is realized. It provides a solution with simplified construction, reduced volume, and stronger adaptability for artificial AI intelligent temperature sensing, equipment body sensing, touch, and internal energy transfer detection of production equipment.

[0057] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0058] This document uses specific examples to illustrate the principles and implementation methods of this application. The description of the above examples is only intended to help understand the method and core concept of this application. At the same time, for those skilled in the art, based on the concept of this application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting this application.

Claims

1. A flexible temperature field sensor, characterized in that: The flexible temperature field sensor includes: a thin film strip and a plurality of voltage-controlled temperature measurement gate chips; The film tape is covered with a copper foil circuit; The film strip is arranged on the area to be measured; a plurality of the voltage-controlled temperature measurement gate chips are arranged on the copper foil circuit of the film strip, and each voltage-controlled temperature measurement gate chip corresponds to a temperature measurement point of the area to be measured; the plurality of the voltage-controlled temperature measurement gate chips are connected in sequence; A trigger voltage is used to sequentially trigger the voltage-controlled temperature measurement gate chip set at each temperature measurement point.

2. The flexible temperature field sensor according to claim 1, characterized in that: The copper foil circuit includes a ground bus, an output bus, a power supply bus and a trigger bus; The ground bus, output bus, power supply bus and trigger bus are all used to form a connection loop with multiple voltage-controlled temperature measurement gate chips; the trigger bus is also used to input a periodic trigger voltage.

3. The flexible temperature field sensor according to claim 2, characterized in that: Each of the voltage-controlled temperature measurement gate chips includes: an analog electronic switch, a diode, a thermistor, a first resistor, a second resistor, and a third resistor; One end of the first resistor is connected to the trigger end of the analog electronic switch; one end of the second resistor is connected to the enable end of the analog electronic switch; the other end of the second resistor is connected to the power supply bus; the cathode of the diode is respectively connected to the other end of the first resistor and one end of the third resistor, and the other end of the third resistor is connected to the ground end of the analog electronic switch; the ground end of the analog electronic switch is connected to the ground bus; one end of the thermistor is connected to the normally closed end of the analog electronic switch.

4. The flexible temperature field sensor according to claim 3, characterized in that: The other end of the first resistor in the i-th voltage-controlled temperature measurement gate chip is connected to the anode of the diode in the (i+1)-th voltage-controlled temperature measurement gate chip; The normally open end of the analog electronic switch in the i-th voltage-controlled temperature measurement gate chip is connected to the other end of the thermistor in the i+1-th voltage-controlled temperature measurement gate chip; the common end of the analog electronic switch in the j-th voltage-controlled temperature measurement gate chip is connected to the output bus, where j is an odd number; the common end of the analog electronic switch in the j+1-th voltage-controlled temperature measurement gate chip is connected to the ground bus; The other end of the thermistor in the first voltage-controlled temperature measurement gate chip is connected to the ground bus; the anode of the diode in the first voltage-controlled temperature measurement gate chip is connected to the trigger bus.

5. The flexible temperature field sensor according to claim 1, characterized in that: The film tape is a polyimide film tape.

6. The flexible temperature field sensor according to claim 1, characterized in that: Silica gel is coated on the side of the film strip opposite to the side where the pressure-controlled temperature measuring gate chip is arranged.

7. The flexible temperature field sensor according to claim 1, characterized in that: The thickness of the film tape is 0.1 mm to 0.2 mm.

8. The flexible temperature field sensor according to claim 6, characterized in that: The film tape has a temperature resistance of -50°C to 300°C.

9. The flexible temperature field sensor according to claim 6, characterized in that: The film tape has a corrosion resistance of 1.0H.

10. The flexible temperature field sensor according to claim 1, characterized in that: A plurality of the voltage-controlled temperature measurement gate chips are arranged on the copper foil circuit of the film strip at set intervals.

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