Overcurrent detection method and device for pre-driving chip, electronic equipment and vehicle
By adjusting the pulse width modulation period of the pre-driver chip, the problem in the prior art that overcurrent detection cannot be performed within the effective time of the drive signal is solved, and the effectiveness of overcurrent detection is achieved without adding circuits or changing hardware.
Patent Information
- Application Number
- CN202410298566.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-15
- Publication Date
- 2025-09-16
AI Technical Summary
The existing technology cannot perform overcurrent detection on the pre-driver chip within the effective time of the driving signal, mainly because the turn-on delay time of the driving MOSFET makes it impossible to collect the voltage of the driving power field effect transistor.
By obtaining the turn-on delay time of the pre-driver chip to be detected and the preset pulse width in the preset pulse width modulation cycle, if the turn-on delay time is greater than the preset pulse width, the target pulse width is adjusted to be greater than the turn-on delay time, and the voltage between the drain and source of the driving power field effect transistor is collected within the target pulse width modulation cycle for overcurrent detection.
Without adding circuits or changing the hardware detection scheme, overcurrent detection is achieved when the pulse width is less than the turn-on delay time, thereby improving the effectiveness of detection.
Smart Images
Figure CN120652248A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of circuit technology, and in particular to a method, device, electronic equipment and vehicle for detecting an overcurrent of a pre-driver chip. Background Art
[0002] A pre-driver chip is a chip specifically designed to drive display devices such as organic light-emitting diodes (OLEDs) and light-emitting diodes (LEDs). Based on the characteristics of the display device, it pre-processes the drive voltage before the display signal arrives, thereby improving display stability and color saturation, making the display clearer, smoother, and more realistic.
[0003] At present, overcurrent detection of pre-driver chips is mainly performed by collecting the voltage (VDS) of the driving power field effect transistor (MOSFET) in the pre-driver chip for overcurrent or short circuit detection when the pulse width of the pre-driver chip is greater than the turn-on delay time of the driving MOSFET.
[0004] However, due to the turn-on delay time of the driving MOSFET, when the pulse width of the pre-driver chip is less than the turn-on delay time of the driving MOSFET, the detection method of the pre-driver chip will make it impossible to collect the VDS of the driving MOSFET within the time when the driving signal is valid, and thus make it impossible to perform overcurrent detection on the pre-driver chip. Summary of the Invention
[0005] In view of this, the present application provides a method, device, electronic device and vehicle for overcurrent detection of a pre-driver chip. The main purpose is to improve the technical problem that the current existing technology cannot collect the VDS of the driving MOSFET within the time when the driving signal is effective, thereby making it impossible to perform overcurrent detection on the pre-driver chip.
[0006] In a first aspect, the present application provides an overcurrent detection method for a pre-driver chip, comprising:
[0007] Acquire a turn-on delay time of a driving power field effect transistor included in the pre-driver chip to be detected, and a preset pulse width in a preset pulse width modulation cycle corresponding to the pre-driver chip to be detected;
[0008] If it is determined that the turn-on delay time is greater than the preset pulse width, adjusting the preset pulse width in the target pulse width modulation period that meets the preset conditions to a target pulse width, wherein the target pulse width is greater than the turn-on delay time;
[0009] The voltage between the drain and the source of the driving power field effect transistor corresponding to the target pulse width is collected, and an overcurrent detection is performed on the pre-driver chip to be detected.
[0010] In a second aspect, the present application provides an overcurrent detection device for a pre-driver chip, comprising:
[0011] an acquisition module configured to acquire a turn-on delay time of a driving power field effect transistor included in a pre-driver chip to be detected, and a preset pulse width in a preset pulse width modulation cycle corresponding to the pre-driver chip to be detected;
[0012] an adjustment module configured to adjust the preset pulse width in a target pulse width modulation period that meets a preset condition to a target pulse width if it is determined that the turn-on delay time is greater than the preset pulse width, wherein the target pulse width is greater than the turn-on delay time;
[0013] The detection module is configured to collect the voltage between the drain and the source of the driving power field effect transistor corresponding to the target pulse width, and perform overcurrent detection on the pre-driver chip to be detected.
[0014] In a third aspect, the present application provides a computer-readable storage medium having a computer program stored thereon, which implements the method described in the first aspect when the computer program is executed by a processor.
[0015] In a fourth aspect, the present application provides an electronic device comprising a storage medium, a processor, and a computer program stored on the storage medium and executable on the processor, wherein the processor implements the method described in the first aspect when executing the computer program.
[0016] In a fifth aspect, the present application provides a vehicle, comprising: the device as described in the second aspect, or the electronic device as described in the fourth aspect.
[0017] By means of the above technical solution, the present application provides a method, device, electronic device and vehicle for overcurrent detection of a pre-driver chip, which first obtains the turn-on delay time of the driving power field effect transistor contained in the pre-driver chip to be detected, and the preset pulse width in the preset pulse width modulation cycle corresponding to the pre-driver chip to be detected; if it is determined that the turn-on delay time is greater than the preset pulse width, the preset pulse width in the target pulse width modulation cycle that meets the preset conditions is adjusted to the target pulse width, and the target pulse width is greater than the turn-on delay time; the voltage between the drain and source of the driving power field effect transistor corresponding to the target pulse width is collected, and overcurrent detection is performed on the pre-driver chip to be detected. Compared with the current existing technology, this embodiment adjusts the preset pulse width in the target pulse width modulation period that meets the preset conditions to the target pulse width when the turn-on delay time is greater than the preset pulse width, so that the turn-on delay time in the target pulse width modulation period is less than the preset pulse width, and then collects the voltage between the drain and source of the driving power field effect transistor in the target pulse width modulation period, and performs overcurrent detection on the pre-driver chip. Without adding any circuits or changing the hardware detection scheme, overcurrent detection can be achieved when the pulse width is less than the turn-on delay time.
[0018] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.
[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0021] Figure 1 A schematic flow chart of an overcurrent detection method for a pre-driver chip provided in an embodiment of the present application is shown;
[0022] Figure 2 A schematic structural diagram of an example provided in an embodiment of the present application is shown;
[0023] Figure 3 A schematic flow chart of an overcurrent detection method for a pre-driver chip provided in an embodiment of the present application is shown;
[0024] Figure 4 A schematic diagram showing an example provided by an embodiment of the present application is shown;
[0025] Figure 5 A schematic diagram showing an example provided by an embodiment of the present application is shown;
[0026] Figure 6 A schematic structural diagram of an overcurrent detection device for a pre-driver chip provided in an embodiment of the present application is shown. DETAILED DESCRIPTION
[0027] In order to more clearly understand the above-mentioned objectives, features and advantages of the present application, the scheme of the present application will be further described below. It should be noted that, in the absence of conflict, the embodiments of the present application and the features therein can be combined with each other.
[0028] In order to improve the technical problem that the existing technology cannot collect the VDS of the driving MOSFET within the effective time of the driving signal, and thus cannot detect the overcurrent of the pre-driver chip, this embodiment provides an overcurrent detection method for the pre-driver chip, such as Figure 1 As shown, the method includes:
[0029] Step 101: Acquire a turn-on delay time of a driving power field effect transistor included in a pre-driver chip to be detected, and a preset pulse width in a preset pulse width modulation period corresponding to the pre-driver chip to be detected.
[0030] In the embodiment of the present application, the pre-driver chip is a chip specifically used to drive display devices such as organic light-emitting diodes (OLEDs) and light-emitting diodes (LEDs). It can pre-process the driving voltage before the display signal arrives according to the characteristics of the display device, thereby improving the display stability and color, making the display effect clearer, smoother, and more realistic. Figure 2 , which is a circuit structure diagram of the pre-driver chip according to an embodiment of the present application.
[0031] Accordingly, the power field effect transistor in the embodiment of the present application is a MOS type (Metal Oxide Semiconductor, MOSFET) among the insulated gate types.
[0032] In this embodiment, pulse-width modulation (PWM) is a technique for outputting analog signals using pulses. While the pulse period after conversion is generally fixed, the duty cycle of the pulse varies depending on the magnitude of the analog signal. In this embodiment, the pulse width is the duration of a high level within the pulse waveform, while the period is the duration of the repeated alternation of high and low levels, including the low level.
[0033] Furthermore, the preset pulse width modulation period is a fixed period of pulse width modulation used by the pre-driver chip, and correspondingly, the preset pulse width is a fixed pulse width in the fixed period of pulse width modulation used by the pre-driver chip.
[0034] Step 102: If it is determined that the on-delay time is greater than the preset pulse width, the preset pulse width in the target pulse width modulation period that meets the preset conditions is adjusted to the target pulse width.
[0035] The target pulse width is greater than the turn-on delay time.
[0036] Optionally, overcurrent detection of the pre-driver chip requires collecting the voltage between the drain and source of the driving power field effect transistor after it is stabilized. When the turn-on delay time of the driving power field effect transistor is greater than the preset pulse width, the voltage between the drain and source of the driving power field effect transistor after it is stabilized cannot be collected during the high level period.
[0037] Further optionally, the target pulse width is a pulse width greater than or equal to the turn-on delay time, and the preset pulse width is adjusted to the target pulse width, that is, the high level duration is adjusted to be greater than the turn-on delay time, so that the voltage between the stabilized drain and source of the driving power field effect transistor can be collected within the target pulse width modulation period that meets the preset conditions.
[0038] Step 103 : collecting the voltage between the drain and source of the driving power field effect transistor corresponding to the target pulse width, and performing overcurrent detection on the pre-driver chip to be detected.
[0039] In some cases, overcurrent occurs when a motor or electrical component exceeds its rated current. Overcurrent is less than short-circuit current, typically within six times the rated current. Overcurrent is more likely to occur in electrical circuits than short-circuit current, especially during frequent motor starting and reverse rotation. If the current returns to normal before the maximum allowable temperature rise is reached, the component can still function properly. However, the surge current from the overcurrent can damage the motor.
[0040] Compared with the current existing technology, the embodiment of the present application adjusts the preset pulse width in the target pulse width modulation cycle that meets the preset conditions to the target pulse width when the turn-on delay time is greater than the preset pulse width, so that the turn-on delay time in the target pulse width modulation cycle is less than the preset pulse width, and then collects the voltage between the drain and source of the driving power field effect transistor in the target pulse width modulation cycle, and performs overcurrent detection on the pre-driver chip. It can realize overcurrent detection when the pulse width is less than the turn-on delay time without adding any circuits and without changing the hardware detection scheme.
[0041] Further, as a refinement and extension of the above embodiment, in order to fully illustrate the specific implementation process of the method of the embodiment of the present disclosure, the embodiment of the present application provides the following Figure 3 The specific method shown includes:
[0042] Step 201 : Obtain a turn-on delay time of a driving power field effect transistor included in a pre-driver chip to be detected, and a preset pulse width in a preset pulse width modulation period corresponding to the pre-driver chip to be detected.
[0043] For example, if the turn-on delay time of the driving power field effect transistor included in the pre-driver chip to be detected is 2, the preset pulse width in the preset pulse width modulation period corresponding to the pre-driver chip to be detected is 1.
[0044] Step 202: If it is determined that the on-delay time is greater than the preset pulse width, a first preset width adjustment timing is started.
[0045] In the embodiment of the present application, before step 202, the method of this embodiment further includes: analyzing load information of the pre-driver chip to be detected to obtain a first preset width adjustment timing.
[0046] In this embodiment, the load information of the pre-driver chip to be detected may include load elements such as load resistance, load motor, load capacitance, load inductance, etc. The specific load elements included in the load information are not specifically limited in the embodiment of this application.
[0047] Accordingly, the first preset width adjustment timing is used to determine how often the pulse width adjustment is started. For example, if the first preset width adjustment timing is 3 preset pulse width modulation cycles, then after determining that the on-time is greater than the preset pulse width, the countdown of the 3 preset pulse width modulation cycles is started, that is, if the current is the first pulse width modulation cycle, then after starting the timing, the pulse width is adjusted at the beginning of the fourth pulse width modulation cycle.
[0048] Exemplarily, based on step 201, the turn-on delay time 2 is greater than the preset pulse width 1, and the first preset width adjustment timing is determined to be 4 preset pulse width modulation cycles according to the load information of the pre-driver chip to be detected. If it is currently in the first preset pulse width modulation cycle, it is determined that the turn-on delay time 2 is greater than the preset pulse width 1, then the countdown of 4 preset pulse width modulation cycles is started. In response to the end of the countdown and the arrival of the fifth preset pulse width modulation cycle, the pulse width in the fifth preset pulse width modulation cycle is adjusted.
[0049] Step 203 : Determine the pulse width modulation period corresponding to the end moment of the first preset width adjustment timing as a target pulse width modulation period that meets preset conditions, and adjust the preset pulse width in the target pulse width modulation period to the target pulse width.
[0050] The first preset width adjustment timing is greater than a preset pulse width modulation period.
[0051] In the embodiment of the present application, the target pulse width is greater than the turn-on delay time, and the specific duration of the target pulse width is not specifically limited in the embodiment of the present application.
[0052] For this embodiment, after step 203, the method of this embodiment further includes: starting a second preset width adjustment timing; and adjusting the target pulse width in the target pulse width modulation period to a preset pulse width in response to the second preset width adjustment timing ending.
[0053] The second preset width adjustment timing is less than or equal to a preset pulse width modulation period.
[0054] In some examples, the second preset width adjustment timing is used to start timing immediately after the preset pulse width is adjusted to the target pulse width, so that the target pulse width can be adjusted to the preset pulse width in the next preset pulse cycle.
[0055] Exemplarily, based on step 202, after the first preset width adjustment timing ends, the fifth preset pulse width modulation cycle is entered, and the preset pulse width in the fifth preset pulse width modulation cycle is adjusted to the target pulse width. After the adjustment is completed, the second preset width adjustment timing is immediately started, and before entering the sixth pulse width adjustment cycle, the pulse width of the sixth pulse width modulation cycle is adjusted back to the preset pulse width.
[0056] Step 204 : collecting the voltage between the drain and source of the driving power field effect transistor corresponding to the target pulse width, and performing overcurrent detection on the pre-driver chip to be detected.
[0057] Optionally, after step 204, the method of this embodiment further includes: reading the fault register corresponding to the pre-driver chip to be detected; if the overcurrent flag of the fault register is set, it is determined that the pre-driver chip to be detected has an overcurrent fault; if the overcurrent flag of the fault register is not set, it is determined that the pre-driver chip to be detected does not have an overcurrent fault.
[0058] Further optionally, after step 204, the method of this embodiment further includes: starting a first preset width adjustment timing; again collecting the voltage between the drain and source of the driving power field effect transistor corresponding to the target pulse width, and again performing overcurrent detection on the pre-driver chip to be detected.
[0059] In some examples, registers are used to temporarily store data involved in calculations and their results. Registers have the ability to receive, store, and output data. Registers have very high read and write speeds, as well as data transfer speeds between registers.
[0060] Exemplarily, based on step 203, after the first preset width adjustment timing ends, the fifth preset pulse width modulation cycle is entered, the preset pulse width in the fifth preset pulse width modulation cycle is adjusted to the target pulse width, the voltage between the drain and source of the driving power field effect transistor is collected, and an overcurrent detection is performed. If the detection result determines that there is no overcurrent fault, the first preset width adjustment timing is started again to perform the next overcurrent detection.
[0061] like Figure 4 The figure shows a schematic diagram of the pre-driver chip driving the MOS and diagnosing overcurrent. The pulse width modulation (PWM) signal is converted by the pre-driver chip into the MOS gate voltage signal VGS. The pre-driver chip reads back the potential of DRN1 and SNGP1 and calculates the voltage difference between the two, VDS. If VDS exceeds the set threshold, it is considered an overcurrent ( Figure 2 duty3 stage), otherwise normal ( Figure 2 The VDS sampling time is when PWM is high and the MOS tube is turned on, and the delay TBLANK_OC is delayed to allow the MOS tube to be turned on stably before sampling, as shown in duty1. Figure 2 , as shown in the waveform of duty1. Due to the TBLANK_OC time, when the PWM duty cycle is less than TBLANK_OC, the chip cannot find a suitable sampling point (because the diagnostic conditions need to meet the PWM high level and the MOS is turned on after the delay TBLANK_OC), thus failing to diagnose the overcurrent fault, as shown in the following figure. Figure 2 , as shown in the waveform of duty 2. The above is the current principle and existing problems of overcurrent fault diagnosis based on VDS.
[0062] In order to solve the problem of being unable to diagnose overcurrent when the PWM duty cycle is small, a PWM signal with a duty cycle equal to TBLANK_OC is injected at regular intervals, such as Figure 5 As shown. At this time, the pre-driver chip can complete the overcurrent diagnosis during this PWM injection period. Then, the software can read the chip diagnosis results to realize overcurrent diagnosis in the small duty cycle control scenario. The frequency of software injection of PWM can be determined based on the actual load characteristics and the diagnostic timeliness requirements. In principle, the injected PWM should not affect the actual load working state and working current.
[0063] Compared with the current existing technology, the embodiment of the present application adjusts the preset pulse width in the target pulse width modulation cycle that meets the preset conditions to the target pulse width when the turn-on delay time is greater than the preset pulse width, so that the turn-on delay time in the target pulse width modulation cycle is less than the preset pulse width, and then collects the voltage between the drain and source of the driving power field effect transistor in the target pulse width modulation cycle, and performs overcurrent detection on the pre-driver chip. It can realize overcurrent detection when the pulse width is less than the turn-on delay time without adding any circuits and without changing the hardware detection scheme.
[0064] Furthermore, in order to fully illustrate the specific implementation process of the method of this embodiment, this embodiment provides the following examples, but is not limited thereto.
[0065] First, it is detected that the pulse width duration of the expected control PWM is less than the turn-on delay time, and the large duty cycle logic is turned on, otherwise it is not turned on; when the large duty cycle logic is turned on, the timing is started; when the timing reaches the predetermined period, the PWM duty cycle time is modified to be equal to the turn-on delay time, and the PWM period remains unchanged; after delaying 1 PWM cycle time, the PWM duty cycle time is modified back to the expected control value; the pre-driver chip fault register is read to determine whether the overcurrent flag is set. If it is set, an overcurrent fault occurs, otherwise, the pre-driver chip to be detected is repeatedly tested.
[0066] Compared with the current existing technology, the embodiment of the present application adjusts the preset pulse width in the target pulse width modulation cycle that meets the preset conditions to the target pulse width when the turn-on delay time is greater than the preset pulse width, so that the turn-on delay time in the target pulse width modulation cycle is less than the preset pulse width, and then collects the voltage between the drain and source of the driving power field effect transistor in the target pulse width modulation cycle, and performs overcurrent detection on the pre-driver chip. It can realize overcurrent detection when the pulse width is less than the turn-on delay time without adding any circuits and without changing the hardware detection scheme.
[0067] Further, as Figure 1 and Figure 3 The specific implementation of the method shown in this embodiment provides an overcurrent detection device for a pre-driver chip, such as Figure 6 As shown, the device includes: an acquisition module 31, an adjustment module 32, and a detection module 33.
[0068] An acquisition module 31 is configured to acquire a turn-on delay time of a driving power field effect transistor included in a pre-driver chip to be detected, and a preset pulse width in a preset pulse width modulation cycle corresponding to the pre-driver chip to be detected;
[0069] an adjusting module 32 configured to adjust the preset pulse width in a target pulse width modulation period that meets a preset condition to a target pulse width if it is determined that the turn-on delay time is greater than the preset pulse width, wherein the target pulse width is greater than the turn-on delay time;
[0070] The detection module 33 is configured to collect the voltage between the drain and the source of the driving power field effect transistor corresponding to the target pulse width, and perform overcurrent detection on the pre-driver chip to be detected.
[0071] In a specific application scenario, the adjustment module 32 is specifically configured to start a first preset width adjustment timing if it is determined that the turn-on delay time is greater than the preset pulse width; determine the pulse width modulation period corresponding to the end moment of the first preset width adjustment timing as a target pulse width modulation period that meets the preset conditions, and adjust the preset pulse width in the target pulse width modulation period to the target pulse width, and the first preset width adjustment timing is greater than the preset pulse width modulation period.
[0072] In a specific application scenario, the adjustment module 32 is further configured to analyze the load information of the pre-driver chip to be detected to obtain the first preset width adjustment timing.
[0073] In a specific application scenario, the adjustment module 32 is further configured to start a second preset width adjustment timing; in response to the end of the second preset width adjustment timing, the target pulse width in the target pulse width modulation period is adjusted to a preset pulse width, and the second preset width adjustment timing is less than or equal to the preset pulse width modulation period.
[0074] In a specific application scenario, the detection module 33 is also configured to read the fault register corresponding to the pre-driver chip to be detected; if the overcurrent flag of the fault register is set, it is determined that the pre-driver chip to be detected has an overcurrent fault; if the overcurrent flag of the fault register is not set, it is determined that the pre-driver chip to be detected does not have an overcurrent fault.
[0075] In a specific application scenario, the detection module 33 is further configured to start the first preset width adjustment timing; again collect the voltage between the drain and source of the driving power field effect transistor corresponding to the target pulse width, and again perform overcurrent detection on the pre-driver chip to be detected.
[0076] It should be noted that for other corresponding descriptions of the functional units involved in the overcurrent detection device for a pre-driver chip provided in this embodiment, reference can be made to Figure 1 and Figure 3 The corresponding description in will not be repeated here.
[0077] Based on the above Figure 1 and Figure 3 The method shown in FIG. 1 is a method for performing the above-mentioned operation. Accordingly, the embodiment of the present disclosure further provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the above-mentioned operation is performed. Figure 1 and Figure 3 The method shown.
[0078] Based on this understanding, the technical solution of the present disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (which can be a CD-ROM, USB flash drive, mobile hard disk, etc.), and includes a number of instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute the methods of various implementation scenarios of the present disclosure.
[0079] Based on the above Figure 1 and Figure 3 The method shown, and Figure 6 In order to achieve the above-mentioned purpose, the embodiment of the present disclosure further provides an electronic device that can be configured on a computer terminal, etc. The device includes a storage medium and a processor; the storage medium is used to store a computer program; the processor is used to execute the computer program to achieve the above-mentioned Figure 1 and Figure 3 The method shown.
[0080] In some embodiments, the physical device may further include a user interface, a network interface, a camera, a radio frequency (RF) circuit, a sensor, an audio circuit, a Wi-Fi module, etc. The user interface may include a display, an input unit such as a keyboard, etc. Optional user interfaces may also include a USB interface, a card reader interface, etc. In some embodiments, the network interface may include a standard wired interface, a wireless interface (such as a Wi-Fi interface), etc.
[0081] Those skilled in the art will understand that the above-mentioned physical device structure provided in the embodiments of the present disclosure does not constitute a limitation on the physical device, and may include more or fewer components, or a combination of certain components, or different component arrangements.
[0082] The storage medium may also include an operating system and a network communication module. The operating system is a program that manages the hardware and software resources of the physical device, supporting the execution of information processing programs and other software and / or programs. The network communication module is used to enable communication between components within the storage medium, as well as with other hardware and software within the physical information processing device.
[0083] Based on the above electronic device, the embodiment of the present disclosure further provides a vehicle, which may specifically include: Figure 6 The device shown or the electronic device as described above. The vehicle can be a new energy vehicle or a traditional vehicle.
[0084] Through the description of the above disclosed embodiments, those skilled in the art can clearly understand that the present disclosure can be implemented by means of software plus the necessary general hardware platform, or by hardware. By applying the solution of the embodiment of the present disclosure, compared with the current prior art, the embodiment of the present application adjusts the preset pulse width in the target pulse width modulation cycle that meets the preset conditions to the target pulse width when the turn-on delay time is greater than the preset pulse width, so that the turn-on delay time in the target pulse width modulation cycle is less than the preset pulse width, and then collects the voltage between the drain and source of the driving power field effect transistor in the target pulse width modulation cycle, and performs overcurrent detection on the pre-driver chip. It can realize overcurrent detection when the pulse width is less than the turn-on delay time without adding any circuits and without changing the hardware detection scheme.
[0085] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a..." do not exclude the presence of other identical elements in the process, method, article or device that includes the elements.
[0086] The foregoing description is intended only to provide specific embodiments of the present disclosure, intended to enable those skilled in the art to understand and implement the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure is not intended to be limited to the embodiments described herein, but rather to be construed in the broadest manner consistent with the principles and novel features claimed herein.
Claims
1. A method for detecting overcurrent of a pre-driver chip, characterized in that: include: Acquire a turn-on delay time of a driving power field effect transistor included in the pre-driver chip to be detected, and a preset pulse width in a preset pulse width modulation cycle corresponding to the pre-driver chip to be detected; If it is determined that the turn-on delay time is greater than the preset pulse width, adjusting the preset pulse width in the target pulse width modulation period that meets the preset conditions to a target pulse width, wherein the target pulse width is greater than the turn-on delay time; The voltage between the drain and the source of the driving power field effect transistor corresponding to the target pulse width is collected, and an overcurrent detection is performed on the pre-driver chip to be detected.
2. The method according to claim 1, characterized in that If it is determined that the turn-on delay time is greater than the preset pulse width, adjusting the preset pulse width in the target pulse width modulation period that meets the preset conditions to the target pulse width includes: If it is determined that the opening delay time is greater than the preset pulse width, starting a first preset width adjustment timing; The pulse width modulation period corresponding to the end moment of the first preset width adjustment timing is determined as a target pulse width modulation period that meets the preset conditions, and the preset pulse width in the target pulse width modulation period is adjusted to the target pulse width, and the first preset width adjustment timing is greater than the preset pulse width modulation period.
3. The method according to claim 2, characterized in that Before starting the first preset width adjustment timing, the method further includes: The load information of the pre-driver chip to be detected is analyzed to obtain the first preset width adjustment timing.
4. The method according to claim 1, wherein If it is determined that the turn-on delay time is greater than the preset pulse width, then after adjusting the preset pulse width in the target pulse width modulation period that meets the preset conditions to the target pulse width, the method further includes: Starting a second preset width adjustment timer; In response to the second preset width adjustment timing ending, the target pulse width in the target pulse width modulation period is adjusted to a preset pulse width, and the second preset width adjustment timing is less than or equal to the preset pulse width modulation period.
5. The method according to claim 2, characterized in that After collecting the voltage between the drain and the source of the driving power field effect transistor corresponding to the target pulse width and performing overcurrent detection on the pre-driver chip to be detected, the method includes: Reading the fault register corresponding to the pre-driver chip to be detected; If the overcurrent flag of the fault register is set, it is determined that the pre-driver chip to be detected has an overcurrent fault; If the overcurrent flag of the fault register is not set, it is determined that the pre-driver chip to be detected does not have an overcurrent fault.
6. The method according to claim 5, characterized in that After determining that the pre-driver chip to be detected does not have an overcurrent fault if the overcurrent flag bit of the fault register is not set, the method further includes: Starting a first preset width adjustment timer; The voltage between the drain and the source of the driving power field effect transistor corresponding to the target pulse width is collected again, and the overcurrent detection is performed again on the pre-driver chip to be detected.
7. An overcurrent detection device for a pre-driver chip, characterized in that: The device comprises: an acquisition module configured to acquire a turn-on delay time of a driving power field effect transistor included in a pre-driver chip to be detected, and a preset pulse width in a preset pulse width modulation cycle corresponding to the pre-driver chip to be detected; an adjustment module configured to adjust the preset pulse width in a target pulse width modulation period that meets a preset condition to a target pulse width if it is determined that the turn-on delay time is greater than the preset pulse width, wherein the target pulse width is greater than the turn-on delay time; The detection module is configured to collect the voltage between the drain and the source of the driving power field effect transistor corresponding to the target pulse width, and perform overcurrent detection on the pre-driver chip to be detected.
8. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 6 is implemented.
9. An electronic device comprising a storage medium, a processor, and a computer program stored on the storage medium and executable on the processor, wherein: When the processor executes the computer program, the method according to any one of claims 1 to 6 is implemented.
10. A vehicle, characterized in that: include: The apparatus according to claim 7, or the electronic device according to claim 9.