Peeling device and peeling method

Abstract

The invention provides a peeling apparatus and a peeling method, which can inhibit substrate damage in peeling of overlapped substrates. The peeling device is used for peeling a superposed substrate formed by jointing a first substrate and a second substrate. The peeling device is provided with: a holding unit that holds the superposed substrate and is capable of rotating the superposed substrate in the circumferential direction; a peeling guide part which has a blade and forms a cutting part by inserting the blade between the first substrate and the second substrate from the side direction of the superposed substrate held by the holding part; and a control device. The control device controls the holding portion and the peeling guide portion so as to form the cutting portion having a length longer than the length of the blade in the longitudinal direction along the circumferential direction of the superposed substrate.

Description

Technical Field

[0001] The present disclosure relates to a stripping device and a stripping method. Background Art

[0002] Patent Document 1 discloses a peeling device for peeling two overlapping substrates (a substrate to be processed and a supporting substrate) from each other. The peeling device holds the substrate to be processed using a first holding portion on the lower side and the supporting substrate using a second holding portion on the upper side. The peeling is triggered by inserting a blade between the substrate to be processed and the supporting substrate. Furthermore, the second holding portion moves a plurality of movable adsorption portions having adsorption pads downward to adsorb the supporting substrate, and the supporting substrate is lifted from the movable adsorption portion on the side where the blade enters, thereby separating the substrate to be processed from the supporting substrate from the blade side.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-207776 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology capable of suppressing damage to substrates during separation of superposed substrates.

[0008] Solutions for solving problems

[0009] According to one embodiment of the present disclosure, a peeling device for peeling off an overlapping substrate formed by bonding a first substrate and a second substrate is provided, the peeling device comprising: a holding portion, which holds the overlapping substrate and can rotate the overlapping substrate in a circumferential direction; a peeling guide portion, which has a blade, and forms an entry portion by inserting the blade between the first substrate and the second substrate from the side of the overlapping substrate held by the holding portion; and a control device, wherein the control device controls the holding portion and the peeling guide portion to form the cutting portion along the circumference of the overlapping substrate, the length of which is longer than the length of the blade in the long side direction.

[0010] Effects of the Invention

[0011] According to one embodiment, damage to the substrates can be suppressed during separation of the superposed substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a plan view schematically showing the peeling system according to the embodiment.

[0013] Figure 2It is a side view schematically showing the structure of a delivery station of the peeling system.

[0014] Figure 3 (A) is a side cross-sectional view showing the superimposed substrates, the dicing frame, and the dicing tape. Figure 3 (B) is a top view showing the superimposed substrates, the dicing frame, and the dicing tape.

[0015] Figure 4 It is a partial side cross-sectional view schematically showing the structure of the peeling device according to the embodiment.

[0016] Figure 5 It is a plan view showing the support member, the upper suction group, and the blade.

[0017] Figure 6 (A) is a first diagram illustrating a process of peeling overlapping wafers. Figure 6 (B) is a second diagram illustrating a peeling process of overlapping wafers. Figure 6 (C) is a third diagram illustrating the peeling process of overlapping wafers. Figure 6 (D) is a fourth diagram illustrating a peeling process of overlapping wafers.

[0018] Figure 7 (A) is a plan view showing an example in which one cutout portion is formed. Figure 7 (B) is a plan view showing an example in which a plurality of cutouts are formed.

[0019] Figure 8 (A)~ Figure 8 (F) is a partial side cross-sectional view showing the process of the embedding action. Figure 8 (G) is a plan view schematically showing the operation of changing the position in the circumferential direction.

[0020] Figure 9 1 is a flowchart illustrating a peeling method according to an embodiment.

[0021] Figure 10 (A) is a plan view showing an incision portion formed by the peeling method according to the first modification. Figure 10 (B) is a plan view showing the incision portion formed by the peeling method according to the second modification. Figure 10 (C) is a plan view showing the incision portion formed by the peeling method involved in the third modification.

[0022] Figure 11 (A) is a plan view showing an incision portion formed by the peeling method according to the fourth modification. Figure 11 (B) is a plan view showing the incision portion formed by the peeling method involved in the fifth modification. DETAILED DESCRIPTION

[0023] Below, the method for implementing the present disclosure is described with reference to the accompanying drawings. In each figure, the same components are labeled with the same reference numerals, and repeated descriptions may be omitted. In addition, the X-axis direction, Y-axis direction, and Z-axis direction used in the following description are axis directions that intersect perpendicularly with each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0024] <Structure of Peeling System 100>

[0025] First, refer to Figures 1 and 2 The structure of the peeling system 100 according to an embodiment of the present disclosure will be described. The peeling system 100 includes a peeling device 7 for peeling a superposed substrate T formed by bonding a first substrate W1 and a second substrate W2. The peeling system 100 is configured such that the superposed substrate T is loaded into the peeling device 7, the superposed substrate T is peeled off by the peeling device 7, and the first substrate W1 and the second substrate W2, after being peeled off, are unloaded from the peeling device 7.

[0026] The first substrate W1 and the second substrate W2 constituting the superposed substrate T are formed into circular plates of substantially the same shape (same diameter). Figure 3 As shown in (A), the first substrate W1 is sometimes referred to as the "upper wafer W1", the second substrate W2 is referred to as the "lower wafer W2", and the overlapping substrate T is referred to as the "overlapping wafer T". In addition, below, the plate surface of the upper wafer W1 on the side that is bonded to the lower wafer W2 is referred to as the "bonding surface W1j", and the plate surface on the side opposite to the bonding surface W1j is referred to as the "non-bonding surface W1n". In addition, the plate surface of the lower wafer W2 on the side that is bonded to the upper wafer W1 is referred to as the "bonding surface W2j", and the plate surface on the side opposite to the bonding surface W2j is referred to as the "non-bonding surface W2n". In addition, the overlapping wafer T, the upper wafer W1, and the lower wafer W2 may also be shapes other than circles (polygonal shapes, etc.).

[0027] At least one of the upper wafer W1 and the lower wafer W2 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, on which multiple electronic circuits are formed. Compound semiconductor wafers are, for example, GaAs wafers, SiC wafers, GaN wafers, or InP wafers. Alternatively, either the upper wafer W1 or the lower wafer W2 may be a bare wafer without electronic circuits formed thereon.

[0028] exist Figure 3In the example (A), a stacked wafer T is shown, in which a support substrate is used as the upper wafer W1 and a silicon wafer with electronic circuits formed thereon is used as the lower wafer W2. In this case, the support substrate (upper wafer W1) is thicker than the lower wafer W2. The material of the support substrate (upper wafer W1) is not particularly limited and can be made of silicon, quartz glass, or the like.

[0029] The bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are bonded by an adhesive G. There is no particular limitation on the type of adhesive G, and an appropriate resin material can be selected according to the material of the upper wafer W1 and the material of the lower wafer W2. Alternatively, the upper wafer W1 and the lower wafer W2 can be bonded chemically. For example, the surfaces (bonding surfaces W1j, W2j) of the upper wafer W1 and the lower wafer W2 are modified by plasma treatment, and further, the modified surfaces are hydrophilized by pure water, thereby enabling the upper wafer W1 and the lower wafer W2 surfaces (bonding surfaces W1j, W2j) to be bonded by van der Waals forces and hydrogen bonds (intermolecular forces).

[0030] In addition, if Figure 3 As shown in FIG. 1B , the overlapped wafer T has a notch N on a portion of the circumferential edge of the outer edge. For example, the notch N is formed by partially cutting off the outer edges of the upper wafer W1 and the lower wafer W2. The upper wafer W1 and the lower wafer W2 are bonded so that the notches N coincide with each other.

[0031] like Figure 3 (A) and Figure 3 As shown in (B), the overlapping wafer T involved in the embodiment is held by a holding jig HJ having a cutting frame F and a cutting tape P. The cutting frame F is an annular metal component with an opening F1 having a diameter larger than that of the overlapping wafer T formed on the inner side. The thickness of the cutting frame F is formed to be thicker than the thickness of the overlapping wafer T. The cutting tape P is formed of a flexible resin material that can be elastically deformed, and an adhesive layer is formed on one surface (upper surface) of the cutting tape P. The opening F1 of the cutting frame F is closed by adhering the peripheral edge of the cutting tape P to the back surface of the cutting frame F. Moreover, in the opening F1 of the cutting frame F, the back surface of the overlapping wafer T is fixed to one surface of the cutting tape P. Specifically, the non-bonding surface W2n of the lower wafer W2 is attached to the adhesive layer of the cutting tape P. The cutting tape P has flexibility that enables the overlapping wafer T and the cutting frame F to be relatively displaced in the thickness direction.

[0032] return Figure 1 The stripping system 100 includes a loading / unloading station 1, a delivery station 2, and a processing station 3. The loading / unloading station 1, the delivery station 2, and the processing station 3 are each configured as a separable unit and are arranged in the order of the loading / unloading station 1, the delivery station 2, and the processing station 3 toward the positive direction of the Y axis.

[0033] The loading / unloading station 1 is used to load the overlapped wafer T, unload the upper wafer W1 and the lower wafer W2 after separation, etc. The loading / unloading station 1 includes a placement unit 4 and a first transfer device 5 .

[0034] The placing portion 4 has a plurality of Figure 1 There are three cassette stages (see Figure 1) for placing cassettes such as FOUPs (Front-Opening Unified Pods) capable of accommodating multiple substrates. Examples of cassettes mounted on each cassette stage include a cassette Ct for accommodating overlapping wafers T, a cassette C1 for accommodating a peeled upper wafer W1, and a cassette C2 for accommodating a peeled lower wafer W2.

[0035] The first transfer device 5 is disposed adjacent to the mounting portion 4 on the positive Y-axis side and is used to transfer the superimposed wafer T, the upper wafer W1, and the lower wafer W2. The first transfer device 5 includes, for example, a base and a plurality of transfer arms, and is used to move the substrates held by the transfer arms horizontally, raise and lower them vertically, and rotate them about the base's vertical axis. The first transfer device 5 is an example of a substrate transfer device.

[0036] The loading / unloading station 1 transfers the overlapped wafers T from each cassette Ct to the delivery station 2 using the first transfer device 5 , and transfers the peeled upper wafer W1 and lower wafer W2 from the delivery station 2 to the cassettes C1 and C2 , respectively.

[0037] The handover station 2 is used to hand over the overlapped wafer T before peeling, the upper wafer W1 after peeling, and the lower wafer W2 after peeling. Figure 2 As shown, the delivery station 2 includes, for example, a first delivery unit 25, a second delivery unit 26, a delivery unit with a flip mechanism 27, and an aligner 28. The first delivery unit 25, the second delivery unit 26, the delivery unit with a flip mechanism 27, and the aligner 28 are arranged in the order described, facing upward in the vertical direction (positive direction of the Z axis).

[0038] The overlapped wafer T transferred from the loading / unloading station 1 is placed on the first interface 25. The overlapped wafer T placed on the first interface 25 is transferred to the processing station 3 by a second transfer device 6 described later.

[0039] The lower wafer W2 after separation is placed on the second delivery portion 26 . The lower wafer W2 after separation placed on the second delivery portion 26 is transferred to the loading / unloading station 1 by the first transfer device 5 .

[0040] The interface 27 with a flipping mechanism is used to place the peeled upper wafer W1. The interface 27 with a flipping mechanism is equipped with a flipping mechanism (not shown) that flips the upper and lower surfaces of the peeled upper wafer W1. After the flipping mechanism flips the upper and lower surfaces of the peeled upper wafer W1 placed on the interface 27 with a flipping mechanism, the upper wafer W1 is transported to the loading / unloading station 1 by the first transport device 5.

[0041] The aligner 28 performs a partial or complete alignment process on the overlapped wafer T, the peeled upper wafer W1, and the peeled lower wafer W2. For example, when performing the alignment process on the overlapped wafer T, the aligner 28 holds the overlapped wafer T and rotates it to detect the notch N of the rotating overlapped wafer T (refer to FIG. Figure 3 The eccentricity of the overlapped wafer T is calculated based on the position of (B)). Based on the eccentricity, the peeling system 100 appropriately operates the aligner 28, the first transfer device 5, or the second transfer device 6 to adjust the horizontal orientation of the overlapped wafer T. The same applies when aligning the upper wafer W1 and the lower wafer W2.

[0042] The processing station 3 includes a second transfer device 6 and a peeling device 7 for peeling the upper wafer W1 and the lower wafer W2 from the overlapped wafer T. For example, the second transfer device 6 and the peeling device 7 are arranged in parallel along the X-axis direction in the processing station 3 .

[0043] The second transfer device 6 transfers the overlapped wafer T, the peeled upper wafer W1, and the lower wafer W2 between the transfer station 2 and the peeling device 7. The second transfer device 6 includes, for example, a base and multiple transfer arms, and is used to move the held substrate horizontally, raise and lower it vertically, and rotate it around the base's vertical axis. The second transfer device 6 is an example of a substrate transfer device.

[0044] The processing station 3 carries out the loading process of the overlapped wafer T from the delivery station 2 to the peeling device 7 by means of the second transport device 6. In addition, the processing station 3 carries out the unloading process of the peeled lower wafer W2 from the peeling device 7 to the delivery station 2 and the unloading process of the peeled upper wafer W1 from the peeling device 7 to the delivery station 2 by means of the second transport device 6.

[0045] The separation device 7 separates the overlapped wafer T carried in by the second transfer device 6 into an upper wafer W1 and a lower wafer W2. The specific structure and operation of the separation device 7 will be described in detail later.

[0046] In addition, the stripping system 100 is provided with a control device 8 for controlling the operation of the stripping system 100. The control device 8 is a computer having a processor 81, a memory 82, and an input / output interface (not shown). The processor 81 is a combination of one or more of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), a circuit composed of a plurality of discrete semiconductors, etc. The memory 82 includes a non-volatile memory and a volatile memory. Programs for controlling various processes are stored in the memory 82, and the processor 81 controls the operation of the stripping system 100 by reading and executing the programs stored in the memory 82. In other words, in the present disclosure, the control device 8 is an electronic circuit having a CPU, a GPU, an ASIC, an FPGA, etc., which executes the various control actions described in the present application specification by executing the command code stored in the memory 82 or by designing the circuit for special purposes.

[0047] Under the control of the control device 8, the peeling system 100 first uses the first conveyor 5 of the loading and unloading station 1 to remove the overlapped wafer T from the cassette Ct placed on the loading section 4 and places the overlapped wafer T on the first delivery section 25 of the delivery station 2. Next, the peeling system 100 uses the second conveyor 6 of the processing station 3 to remove the overlapped wafer T placed on the first delivery section 25 and move it into the aligner 28. The control device 8 performs the following control: the aligner 28 calculates the eccentricity of the overlapped wafer T and adjusts the receiving position (the horizontal orientation of the overlapped wafer T) of the second conveyor 6 for receiving the overlapped wafer T based on the eccentricity. Then, the peeling system 100 uses the second conveyor 6 to move the overlapped wafer T from the aligner 28 into the peeling device 7.

[0048] The peeling device 7 peels the overlapped wafer T into the upper wafer W1 and the lower wafer W2 under the control of the control device 8. The peeling device 7 may include a dedicated control board and control the peeling of the overlapped wafer T based on the control board's instructions from the control device 8.

[0049] After the peeling device 7 performs peeling, the peeling system 100 operates the second transport device 6 to transport the lower wafer W2 from the peeling device 7 to the aligner 28. After adjusting its horizontal orientation using the aligner 28, the lower wafer W2 is transported to the second delivery port 26. Furthermore, the peeling system 100 uses the first transport device 5 to remove the lower wafer W2 from the second delivery port 26 and place it in a cassette C2 placed on the loading / unloading station 1. When the cassette C2 contains a certain number of lower wafers W2, the cassette C2 is removed from the loading / unloading station 1.

[0050] In addition, the stripping system 100 operates the second conveying device 6 at a time different from the time of conveying the lower wafer W2 to convey the upper wafer W1 from the stripping device 7 to the aligner 28, and after adjusting the horizontal direction of the upper wafer W1 using the aligner 28, conveys the upper wafer W1 to the delivery portion 27 with a flipping mechanism. In addition, the stripping system 100 uses the flipping mechanism of the delivery portion 27 with a flipping mechanism to flip the upper surface and the lower surface of the upper wafer W1. As a result, the upper wafer W1 is in a state where the bonding surface W1j faces upward. Afterwards, the stripping system 100 uses the first conveying device 5 to remove the upper wafer W1 from the delivery portion 27 with a flipping mechanism and accommodate it in the box C1 placed on the load-in / load-out station 1. When the box C1 accommodates a certain number of upper wafers W1, the box C1 is taken out from the load-in / load-out station 1.

[0051] <Structure of the peeling device 7>

[0052] Next, refer to Figure 4 The structure of the peeling device 7 involved in the embodiment is described below. The peeling device 7 holds the overlapping wafer T in a manner of clamping the overlapping wafer T along the vertical direction (Z-axis direction) and peels the upper wafer W1 and the lower wafer W2 of the overlapping wafer T. The peeling device 7 has a processing container 30 for carrying the overlapping wafer T, and is provided with an adsorption peeling part 40, a holding part 50 and a peeling guide part 60 on the inner side of the processing container 30. The peeling guide part 60 forms a cutting part CP (refer to FIG. 1 ) for peeling the upper wafer W1 and the lower wafer W2 of the overlapping wafer T. Figure 7 (A) and Figure 7 (B)).

[0053] The suction and peeling unit 40 suctions the non-bonding surface W1n of the upper wafer W1 of the overlapping wafer T to hold the upper wafer W1 and performs a peeling operation to lift the upper wafer W1 vertically upward. The suction and peeling unit 40 includes a base member 41, a pair (two) of lifting mechanisms 42 disposed on the base member 41, a support member 43 supported by the pair of lifting mechanisms 42, and an upper suction group 44 supported by the support member 43 and sucking the upper wafer W1. The suction and peeling unit 40 also includes a transfer holding unit 47 that transfers the peeled upper wafer W1 to a conveying device (not shown), and a pressing unit 48 for pressing the dicing frame F.

[0054] The base member 41 is a plate member having an appropriate thickness and is, for example, directly or indirectly fixed to the ceiling (or side wall) of the processing container 30. The base member 41 has sufficient rigidity to maintain a horizontally extended state (XY axis direction) within the processing container 30.

[0055] A pair of lifting mechanisms 42 are fixed to the upper portion of the base member 41 and are positioned at the same height. These lifting mechanisms 42 support a support member 43 located vertically below the base member 41 and raise and lower the support member 43. Each lifting mechanism 42 includes a main body 421, a shaft 422 protruding vertically downward from the main body 421, and a load sensor 423 for detecting the load applied to the shaft 422.

[0056] The main body 421 is mounted on the base member 41. A drive source and a transmission mechanism (not shown) for vertically elevating the shaft 422 are located within the main body 421. The main body 421 is connected to the control device 8, and the shaft 422 is raised and lowered according to the control of the control device 8. The peeling device 7 can independently raise and lower the shafts 422 of the pair of elevating mechanisms 42.

[0057] The shaft 422 extends linearly in the vertical direction and supports the support member 43 connected to the lower end of the shaft 422. The load sensor 423 detects the load applied to the shaft 422 and transmits the detection result to the control device 8. During the debonding of the overlapped wafers T, the control device 8 controls the height position of the support member 43 based on the detection result of the load sensor 423.

[0058] The support member 43 is a thin plate-shaped member that supports the upper suction group 44 that suctions the upper wafer W1. Made of a metal material or the like, the support member 43 achieves both rigidity sufficient to support the upper suction group 44 and flexibility sufficient to elastically deform in the vertical direction. The support member 43 is suspended from a pair of lifting mechanisms 42, extending approximately parallel to the suction surface 51s of the lower holding portion 50. As a result, the lower surface of the support member 43 faces the overlapping wafer T held by the holding portion 50.

[0059] like Figure 5 As shown, the support member 43 includes a circular plate 431 and a pair of protruding plates 432 provided on both sides of the circular plate 431 in the Y-axis direction. The circular plate 431 and the pair of protruding plates 432 are fixed to each other by appropriate fastening means such as screwing, welding, or bonding. Alternatively, the circular plate 431 and the pair of protruding plates 432 may be integrally formed.

[0060] The circular plate 431 is formed into a true circular shape having a diameter approximately equal to that of the upper wafer W1. The center of the circular plate 431 is substantially aligned with the center of the suction surface 51s of the holding portion 50, which will be described later. When viewed from above, the circular plate 431 overlaps with the overlapping wafer T held by the holding portion 50. The circular plate 431 directly supports the upper suction group 44.

[0061] A through hole 433 is provided in the region including the center of the circular plate 431 and passes through in the thickness direction. The through hole 433 enables the transfer holding portion 47 (see Figure 4 ) passes through, so that the transfer holding portion 47 can hold the upper wafer W1. In addition, the circular plate 431 can also have a plurality of small holes (not shown) penetrating along the thickness direction, thereby making the circular plate 431 easy to elastically deform. In addition, the circular plate 431 can also be configured as follows: by having a plurality of ribs and grooves extending along the X-axis direction in the Y-axis direction, the elastic deformation of the circular plate 431 in the X-axis direction is suppressed, and the elastic deformation in the Y-axis direction is promoted.

[0062] A pair of protruding plates 432 protrude in opposite directions from the outer periphery of the circular plate 431 in the Y-axis direction. The shaft 422 of the lifting mechanism 42 is connected to the protruding end of each protruding plate 432. Thus, each protruding plate 432 is lifted and lowered in the vertical direction (Z-axis direction) by a pair of lifting mechanisms 42. The horizontal posture of the circular plate 431 changes according to the height position of each protruding plate 432 (the shaft 422 of the lifting mechanism 42). In particular, by independently lifting and lowering the lifting mechanism 42, the supporting member 43 can be elastically deformed in a manner that bends relative to the Y-axis direction, so that the upper adsorption group 44 is displaced while bending (see also Figure 6 (C)).

[0063] like Figure 4and Figure 5 As shown, the upper adsorption group 44 supported on the supporting member 43 has a plurality of adsorbents 45. Each adsorbent 45 has a cylindrical portion 451 extending in the vertical direction, a contact portion 452 provided at the lower end of the cylindrical portion 451, and a suction path 453 connected to the cylindrical portion 451. In addition, a suction device 454 such as a vacuum pump is provided in the suction path 453 of each adsorbent 45. In addition, each suction path 453 can also be connected to a suction device 454 by merging at the outside.

[0064] The cylindrical portion 451 has a suction space extending axially therein. The cylindrical portion 451 is securely connected to the circular plate 431 of the support member 43 and protrudes from the lower surface of the support member 43. When the support member 43 is in a horizontal position, the contact portion 452 of each cylindrical portion 451 is positioned at the same height. Furthermore, a port 455 connected to the suction path 453 is provided on the upper surface of the cylindrical portion 451, which is adjacent to the support member 43.

[0065] The contact portion 452 is formed, for example, in a truncated cone shape, a cylindrical shape, or the like, and constitutes a portion that directly contacts the non-bonding surface W1n of the upper wafer W1. The contact portion 452 is preferably formed of a rubber material or other resin material. It is preferable that the contact portion 452 is formed to have high rigidity (difficult to elastically deform). This is because if the contact portion 452 is elastically deformed significantly when the adsorption and stripping portion 40 rises, the adsorbed portion of the upper wafer W1 will also be significantly deformed, which may cause damage to the upper wafer W1 or the lower wafer W2.

[0066] The suction device 454 is connected to the control device 8 and performs suction operation based on the control of the control device 8. When the contact portion 452 of each suction body 45 is in contact with the non-bonding surface W1n of the upper wafer W1, suction pressure is applied to the contact portion 452 from the suction device 454 via the suction path 453 and the cylindrical portion 451, thereby sucking the upper wafer W1.

[0067] exist Figure 5 In the example, five adsorbents 45 are provided for the supporting member 43. One pair of adsorbents 45 is arranged along the X-axis direction with the protruding plate 432 interposed therebetween on the negative side of the Y-axis of the supporting member 43. Another pair of adsorbents 45 is arranged along the X-axis direction with the through-hole 433 interposed therebetween on the position of the supporting member 43 close to the through-hole 433 (a position of the supporting member 43 closer to the negative side of the Y-axis than the center). The remaining adsorbent 45 is provided on the positive side of the Y-axis of the supporting member 43 (a position adjacent to the protruding plate 432 on the positive side of the Y-axis). However, the number and arrangement of the adsorbents 45 can of course be designed arbitrarily.

[0068] In addition, if Figure 4As shown, in the upper suction group 44, multiple distance sensors 46 are fixed to the base member 41. The control device 8 can calculate the height (vertical position) of the upper wafer W1 by having each distance sensor 46 measure the distance to the facing overlapping wafer T (upper wafer W1). For example, during the peeling operation, the control device 8 can identify the progress of the peeling by calculating the height of the upper wafer W1.

[0069] The transfer holding portion 47 of the adsorption and peeling unit 40 is provided on the base member 41 and is used to adsorb the non-bonding surface W1n of the upper wafer W1 after peeling held by the upper adsorption group 44 and hold the upper wafer W1. The transfer holding portion 47 includes a base 471, a plurality of adsorption pads 472, a plurality of contact pads 473, and a base lifting mechanism 474 (at Figure 4 , an adsorption pad 472 and a contact pad 473 are representatively illustrated).

[0070] The base 471 extends vertically and is formed into a cylindrical shape that is inserted through a through-hole (not shown) in the base member 41. A plurality of suction pads 472 and a plurality of contact pads 473 are supported on the lower end surface of the base 471. The base 471 is connected to a base lifting mechanism 474 and is raised and lowered vertically by the base lifting mechanism 474. When lowered, the base 471 passes through the through-hole 433 of the support member 43.

[0071] The plurality of suction pads 472 are made of a rubber material, for example, in a bellows shape, and are thus capable of tracking vertical and horizontal displacements of the upper wafer W1. Each suction pad 472 is connected to a suction device 476, such as a vacuum pump, via a suction path 475. The suction device 476 is connected to the control device 8 and performs suction operations under the control of the control device 8. The transfer holding portion 47 generates suction pressure (negative pressure) on the plurality of suction pads 472 via the suction path 475 and the base 471, thereby sucking the non-bonding surface W1n of the upper wafer W1.

[0072] Meanwhile, a plurality of contact pads 473 are formed from a resin material into a hemispherical shape or the like, and contact the non-bonding surface W1n of the upper wafer W1 held by the suction pads 472. The amount of protrusion of each contact pad 473 from the base 471 can be adjusted by an adjustment unit (not shown) to assist in separating the upper wafer W1 from the transfer holder 47.

[0073] The base elevating mechanism 474 elevates the base 471 under the control of the control device 8, thereby vertically displacing the plurality of suction pads 472 and the plurality of contact pads 473. For example, the base elevating mechanism 474 elevates the plurality of suction pads 472 and the plurality of contact pads 473 between a standby position, a holding position for sucking the peeled upper wafer W1 held by the upper suction group 44, and a transfer position for transferring the upper wafer W1 to the second transfer device 6.

[0074] The pressing portion 48 of the suction and peeling unit 40 is provided on the outer periphery of the base member 41 (located radially outward from the pair of lifting mechanisms 42) and presses the dicing frame F vertically downward at appropriate times. For example, four pressing portions 48 are provided circumferentially at positions corresponding to the dicing frame F being conveyed to the holding unit 50. Of course, there is no particular limitation on the number of pressing portions 48.

[0075] Each pressing portion 48 includes a pressing pad 481, a shaft member 482, and a moving mechanism 483. The pressing pad 481 is formed of an elastic member such as rubber. The shaft member 482 is supported by the moving mechanism 483 so as to be movable in the vertical direction. The pressing pad 481 is attached to the lower end of the shaft member 482. The moving mechanism 483 is fixed to the base member 41 and connected to the control device 8. The moving mechanism 483 lowers and raises the shaft member 482 based on the control of the control device 8.

[0076] Meanwhile, the holding unit 50 of the peeling device 7 is positioned downward from the vertical center of the processing container 30 and holds the holding jig HJ holding the overlapped wafer T by suction. The holding unit 50 includes a disk-shaped lower holding plate (holding plate: chuck) 51, support columns 52 for supporting the lower holding plate 51, a rotation and lifting mechanism 53 for rotating and lifting the lower holding plate 51, and a frame holding unit 54 for holding the dicing frame F radially outward of the lower holding plate 51.

[0077] The lower holding plate 51 is formed of a metal material such as aluminum, and has a circular suction surface 51s on its upper surface. The suction surface 51s has a diameter slightly larger than that of the lower wafer W2. The suction surface 51s is formed of a porous suction pressure providing portion 511, which is flat and has no grooves or holes. As a result, the lower holding plate 51 can generate suction pressure across the entire surface of the suction surface 51s through the suction pressure providing portion 511, thereby firmly holding the lower wafer W2. The suction pressure providing portion 511 can be formed of a resin material such as PCTFE (polychlorotrifluoroethylene).

[0078] A suction space 512 is formed inside the lower holding disc 51 and communicates with the suction pressure applying unit 511. A suction pipe 513 is connected to the outside of the lower holding disc 51 and communicates with the suction space 512. This suction pipe 513 is connected to a suction path 514 equipped with a suction device 515, such as a vacuum pump. The holding unit 50 generates suction pressure on the suction surface 51s from the suction device 515 via the suction path 514, the suction pipe 513, and the suction space 512.

[0079] When the overlapped wafer T is placed on the holding portion 50, the position of the overlapped wafer T is adjusted so that the center of the overlapped wafer T (lower wafer W2) is aligned with the center of the suction surface 51s of the lower wafer W2. In addition, the lower holding plate 51 is internally provided with a plurality of lift pins (not shown), and the overlapped wafer T is placed on the suction surface 51s by raising and lowering the lift pins relative to the suction surface 51s.

[0080] The rotary lifting mechanism 53 of the holding portion 50 enables the lower holding disc 51 to rotate and shift in a stripping direction (vertical direction) perpendicular to the insertion direction of the blade 61. For example, the rotary lifting mechanism 53 internally includes a drive source for rotating the support 52, a drive source for lifting the support 52, and a transmission mechanism (not shown) that transmits the driving force of each drive source. The rotary lifting mechanism 53 is connected to the control device 8 and rotates the lower holding disc 51 about the vertical axis and lifts the lower holding disc 51 based on the control of the control device 8.

[0081] The frame holding portion 54 absorbs the cutting frame F after being pressed by the pressing portion 48 and holds the cutting frame F in the pressed state. The frame holding portion 54 includes a plurality of suction pads 541 and a support body 542 that supports the suction pads 541. The suction pads 541 are formed of an elastic member such as rubber, and for example, four suction pads 541 are provided at equal intervals in the circumferential direction at positions corresponding to the cutting frame F. As an example, each suction pad 541 can be provided at a position facing the plurality of pressing portions 48 in the vertical direction. In addition, there is no particular limitation on the number of suction pads 541.

[0082] Each suction pad 541 has an air intake port (not shown) on its inner side. Each suction pad 541 is connected to a suction device 545, such as a vacuum pump, via a support 542, a suction tube 543 connected to the support 542, and a suction path 544 connected to the suction tube 543. The upper end (air intake port) of the suction pad 541 is positioned vertically below the suction surface 51s of the lower holding plate 51. The suction device 545 is connected to the control device 8 and applies suction pressure to each suction pad 541 based on control by the control device 8.

[0083] The support body 542 is supported by the lower base portion 546 and protrudes vertically at an appropriate position (circumferentially corresponding to the position of the cutting frame F) to hold each suction pad 541. The lower base portion 546 is formed in a circular plate shape, and the support body 542 and the support column 52 are fixed. In addition, the rotating shaft (not shown) of the rotary lifting mechanism 53 is connected to the lower surface of the lower base portion 546.

[0084] Thus, the frame holding portion 54 can absorb and hold the dicing frame F using the negative pressure generated by the suction of the suction device 545. In addition, the holding portion 50 can integrally shift (rotate and elevate) the superimposed wafer T held on the lower holding plate 51 and the dicing frame F held on the frame holding portion 54 by rotating the lifting mechanism 53.

[0085] The peeling guide 60 of the peeling device 7 is disposed to the side of the suction peeling unit 40 and the holding unit 50 , and forms a cutting portion CP radially inward from the outer edge of the overlapped wafer T during peeling of the upper wafer W1 and the lower wafer W2 of the overlapped wafer T. The peeling guide 60 includes a blade 61 , a blade sliding mechanism 62 , and a blade lifting mechanism 63 .

[0086] The blade 61 is a stripping member having a sharp-angled blade tip facing the positive direction of the Y axis. The blade 61 is formed into a rectangular shape that is short in the Y axis direction and long in the X axis direction when viewed from above (see also Figure 5 The length of the blade 61 in the X-axis direction, that is, the longitudinal length of the blade 61, can be set to an appropriate size within the range of 50 mm to 150 mm. The longitudinal length of the blade 61 in the embodiment is set to 100 mm.

[0087] The blade sliding mechanism 62 includes a movable body 621 that supports the blade 61 and a fixed body 622 that slidably supports the movable body 621. The movable body 621 supports the blade 61 so that it protrudes in the positive direction of the Y-axis. Driven by a drive source (not shown), the blade 61 and the fixed body 622 are driven to reciprocate relative to each other along the Y-axis. In other words, the blade 61 is moved forward in the positive direction of the Y-axis or retracted in the negative direction of the Y-axis by the blade sliding mechanism 62.

[0088] The blade lifting mechanism 63 is fixed to, for example, the end portion on the Y-axis negative side of the base member 41 and moves the blade sliding mechanism 62 in the vertical direction.

[0089] The peeling guide 60, for example, adjusts the height of the blade 61 using the blade lift mechanism 63 and then advances the blade 61 in the positive direction of the Y axis using the blade slide mechanism 62. As this advance occurs, the tip of the blade 61 enters the adhesive G between the upper wafer W1 and the lower wafer W2 from the side of the overlapping wafer T, thereby forming a cut-in area CP between the upper wafer W1 and the lower wafer W2. The cut-in area CP is where the adhesive G bonding the overlapping wafers T near their outer edges is broken, separating the bonding surface W1j of the upper wafer W1 from the bonding surface W2j of the lower wafer W2.

[0090] <Debonding Process of Overlapped Wafer T>

[0091] The peeling device 7 constructed as described above is controlled by the control device 8. Figure 6 (A)~ Figure 6 The process shown in (D) is to perform peeling of the overlapped wafers T.

[0092] Specifically, if Figure 6 As shown in (A), after the overlapping wafer T integrated with the dicing frame F is placed on the holding portion 50, the peeling device 7 provides adsorption pressure to the adsorption surface 51s of the lower holding disk 51, and fixes the overlapping wafer T to the holding portion 50 with the help of the dicing tape P. In addition, the peeling device 7 lowers the pressing portion 48 in the vertical direction to press the dicing frame F through the pressing portion 48. At this time, the portion of the dicing tape P located outside the lower holding disk 51 is deformed obliquely downward, thereby allowing the displacement of the dicing frame F. In addition, the peeling device 7 operates the frame holding portion 54 to provide adsorption pressure to the adsorption pad 541, thereby holding the pressed dicing frame F on the frame holding portion 54. As a result, the side of the overlapping wafer T faces the blade 61 of the peeling guide 60.

[0093] Then, if Figure 6 As shown in FIG. 5B , the peeling device 7 inserts the blade 61 of the peeling guide 60 between the upper wafer W1 and the lower wafer W2 of the superposed wafers T to perform a cutting portion forming operation for forming a cutting portion CP. This cutting portion forming operation will be described in detail later.

[0094] Afterwards, if Figure 6 As shown in (C), the peeling device 7 lowers the upper adsorption group 44 through a pair of lifting mechanisms 42 and adsorbs the upper wafer W1 through each adsorption body 45. Then, the peeling device 7 raises the lifting mechanism 42 on the negative side of the Y-axis to bend the support member 43 on the negative side of the Y-axis. As a result, the adsorption body 45 on the negative side of the Y-axis rises in a manner that rolls up the negative side of the Y-axis of the upper wafer W1, thereby starting the peeling action of separating the upper wafer W1 from the lower wafer W2. The lifting mechanism 42 gradually increases the degree of bending of the support member 43 by slowly rising, and accordingly, the peeling of the upper wafer W1 and the lower wafer W2 progresses from the negative side of the Y-axis to the positive side of the Y-axis.

[0095] When the peeling of the upper wafer W1 and the lower wafer W2 progresses to a certain extent (for example, when the peeling exceeds the center of the overlapping wafer T), as shown in FIG. Figure 6 As shown in (D), the peeling device 7 also raises the lifting mechanism 42 on the positive Y-axis side, thereby separating the upper wafer W1 from the lower wafer W2. In the second half of the peeling operation, the bonding force between the upper wafer W1 and the lower wafer W2 also weakens, so that the peeling can proceed smoothly.

[0096] As described above, the peeling device 7 can peel the upper wafer W1 and the lower wafer W2 by operating the suction peeling section 40 , the holding section 50 , and the peeling guide section 60 in conjunction with each other.

[0097] In addition, in the conventional peeling device, after forming a cutting portion CP at the position on the negative side of the Y axis (the position where peeling starts) by the peeling guide portion, the peeling operation of the upper wafer W1 and the lower wafer W2 is performed (for example, see also Figure 7 (A)). When the upper wafer W1 and the lower wafer W2 are strongly bonded in the overlapping wafer T, local stress is applied to the upper wafer W1 during the peeling action, whereby the upper wafer W1 is sometimes damaged (cracked). Therefore, the peeling device 7 involved in the embodiment is configured to promote the peeling of the upper wafer W1 and the lower wafer W2 by forming the cutting portion CP of the peeling guide 60 at different positions in the circumferential direction of the overlapping wafer T. In other words, the peeling device 7 forms the cutting portion CP with a circumference longer than the length of the blade 61 of the peeling guide 60 in the long side direction. "The cutting portion CP with a circumference longer than the length of the blade 61 in the long side direction" can be achieved by adding up the circumferences of multiple cutting portions CP, or by a series of circumferences of the cutting portions CP.

[0098] <Entry point formation action>

[0099] Below, refer to Figure 7 (A)~ Figure 8 (G) will specifically describe the cutting portion forming operation of forming multiple cutting portions CP. In the cutting portion forming operation of forming multiple cutting portions CP, the circumferential position of the overlapping wafers T is changed to perform the inserting operation of the blade 61 inserted into the stripping guide 60 multiple times.

[0100] like Figure 7 As shown in (A), the range of the cut-in portion CP is, for example, approximately 1 / 9 of the outer edge of the overlapping wafer T (approximately 40°: approximately 105 mm in circumference). Therefore, when the blade 61 of the peeling guide 60 is inserted into the overlapping wafer T only once, 8 / 9 of the outer edge of the overlapping wafer T (approximately 320°: approximately 840 mm in circumference) is in a state where the outer periphery of the upper wafer W1 and the outer periphery of the lower wafer W2 are bonded. During the peeling operation, the portion where the bonding force between the outer periphery of the upper wafer W1 and the outer periphery of the lower wafer W2 is strong is used as the starting point, so that the upper wafer W1 is more likely to crack.

[0101] Therefore, the peeling device 7 according to the embodiment inserts the blade 61 multiple times while changing the circumferential position of the overlapped wafer T, thereby forming multiple cutting portions CP on the outer edge of the overlapped wafer T. Figure 7As shown in (B), the peeling device 7 performs the embedding operation nine times while changing the circumferential position of the overlapped wafer T using the rotating lifting mechanism 53 of the holding portion 50, thereby forming nine cutting portions CP along the entire circumference of the overlapped wafer T. Thus, the peeling device 7 can eliminate (or reduce) the areas of strong bonding strength between the outer periphery of the upper wafer W1 and the outer periphery of the lower wafer W2 along the entire circumference of the overlapped wafer T before the peeling operation.

[0102] Specifically, the stripping device 7 performs a one-time embedding action. Figure 8 (A)~ Figure 8 The action shown in (F) and as Figure 8 The overlapping wafer T is rotated as shown in (G). Figure 8 As shown in FIG. 1A , the peeling device 7 first advances the blade 61 toward the overlapped wafer T using the blade sliding mechanism 62 so that the tip of the blade 61 contacts the outer edge of the overlapped wafer T (upper wafer W1), thereby detecting the position of the outer edge of the overlapped wafer T. By recognizing the position of the outer edge of the overlapped wafer T, the control device 8 can adjust the actual insertion amount of the blade 61 into the adhesive G.

[0103] Then, if Figure 8 As shown in (B), the peeling device 7 temporarily moves the blade 61 back from the overlapping wafer T to the side (negative direction of the Y axis) through the blade sliding mechanism 62, and then raises the overlapping wafer T through the rotating lifting mechanism 53 of the holding part 50. During the rising process of the overlapping wafer T, the control device 8 detects the height position of the upper wafer W1 by the distance sensor 46 of the adsorption peeling part 40, and guides the upper wafer W1 to the target height position. As a result, the tip of the blade 61 faces the adhesive G of the overlapping wafer T. In more detail, the tip of the blade 61 faces the adhesive G on the bonding surface W1j of the upper wafer W1.

[0104] Then, if Figure 8 As shown in (C), the peeling device 7 advances the blade 61 in the positive direction of the Y axis by the blade sliding mechanism 62, thereby inserting the tip of the blade 61 into the adhesive G. The tip of the blade 61 is inserted into a position near the bonding surface W1j of the upper wafer W1 based on the facing position of the blade 61 and the overlapping wafer T described above.

[0105] Then, if Figure 8As shown in (D), the stripping device 7 moves the blade 61 further forward while lowering the lower holding plate 51 in the vertical direction by rotating the lifting mechanism 53, thereby lowering the lower wafer W2 of the adsorbed overlapping wafer T together. The amount of descent of the lower wafer W2 at this time is about several hundred microns to several millimeters. As the lower wafer W2 descends, the outer periphery of the upper wafer W1 and the outer periphery of the lower wafer W2 can be greatly separated, thereby increasing the depth of the cutting portion CP. In addition, the outer periphery of the upper wafer W1 is in a state of slightly resting on the upper surface of the blade 61, which can promote the separation of the adhesive G from the upper wafer W1. In addition, the stripping device 7 can also increase the insertion amount of the blade 61 by moving the blade 61 further forward after the lower holding plate 51 is lowered. In addition, the stripping device 7 can also lower the lower holding plate 51 by rotating the lifting mechanism 53 after moving the blade 61 further forward.

[0106] After the blade 61 is advanced to the set insertion amount, as shown in FIG. Figure 8 As shown in (E), the peeling device 7 moves the blade 61 back through the blade sliding mechanism 62 and moves the blade 61 back through the rotating lifting mechanism 53. Figure 8 The lower wafer W2, which had been lowered in (D), rises. Consequently, the outer periphery of the upper wafer W1 resting on the blade 61 returns to its original position. However, the cut portion CP formed between the adhesive G and the upper wafer W1 remains, so the bonding force of the adhesive G at the cut portion CP is sufficiently reduced. Alternatively, the peeling device 7 can lower the lower holding plate 51 by rotating the lifting mechanism 53 after retracting the blade 61.

[0107] Then, if Figure 8 As shown in (F), the peeling device 7 retracts and separates the blade 61 from the superimposed wafer T. Thus, one insertion operation of the peeling device 7 is completed.

[0108] Therefore, if Figure 8 As shown in (G), the peeling device 7 rotates the overlapped wafer T by a set angle using the rotary lifting mechanism 53, so that a position of the overlapped wafer T different from the position where the cutting portion CP is formed faces the blade 61. For example, the rotary lifting mechanism 53 rotates the overlapped wafer T along the circumferential direction ( Figure 7 The outer edge of the overlapping wafer T where the cutting portion CP is to be formed is made to face the blade 61. Figure 8 (A)~ Figure 8 The embedding action of (F) can form the next cutting part CP at the outer edge of the overlapping wafer T.

[0109] The stripping device 7 is Figure 8 (A)~ Figure 8Repeating (G) nine times can form multiple cut-in areas CP along the entire circumference of the overlapping wafer T, thereby reducing the bonding force at the outer edge of the overlapping wafer T. Therefore, in the peeling operation after the cut-in area formation operation, when the peeling device 7 lifts the upper wafer W1 upward from the negative Y-axis side via the upper suction group 44, the peeling of the upper wafer W1 and the lower wafer W2 can proceed smoothly toward the positive Y-axis direction.

[0110] Furthermore, during the insertion operation of rotating the overlapped wafer T and inserting the blade 61, the peeling device 7 may also vary the insertion amount of the blade 61 according to the circumferential position of the overlapped wafer T. For example, the peeling device 7 may determine the areas of the upper wafer W1 that are prone to cracking by evaluating the overlapped wafer T in advance and increase the insertion amount of the blade 61 in those areas. Alternatively, for example, the peeling device 7 may increase the insertion amount of the blade 61 each time the overlapped wafer T is rotated and inserted.

[0111] <Peeling method>

[0112] The peeling device 7 according to the embodiment is basically configured as described above. The operation (peeling method) thereof will be described below. As the peeling method of the peeling device 7, the control device 8 controls, for example, Figure 9 Steps S101 to S107 are shown.

[0113] The peeling system 100 first performs a loading process for the overlapped wafer T into the peeling device 7 (step S101). During the loading process, the second transport device 6 transports the overlapped wafer T, held by the dicing frame F, into the processing container 30 of the peeling device 7, and aligns the center of the overlapped wafer T with the center position of the suction surface 51s of the lower holding plate 51. Furthermore, the peeling device 7 raises the lift pins from the suction surface 51s to receive the overlapped wafer T, and then lowers the lift pins to place the overlapped wafer T on the suction surface 51s. As the overlapped wafer T is placed, the suction device 515 of the holding unit 50 performs a suction operation to secure the overlapped wafer T (dicing tape P) to the lower holding plate 51.

[0114] Next, the peeling device 7 presses the dicing frame F onto the adsorption pad 541 through the pressing portion 48, and adsorbs the pressed dicing frame F (including the dicing tape P) through the frame holding portion 54 (step S102, also refer to Figure 6 (A)). Thus, the holding portion 50 can fix the overlapped wafer T and the dicing frame F as a whole. The overlapped wafer T is pressed by the dicing frame F so that the adhesive G between the upper wafer W1 and the lower wafer W2 is exposed at the side.

[0115] In this state, the peeling device 7 performs the cutting portion forming operation using the peeling guide 60, thereby forming the cutting portion CP at different positions in the circumferential direction of the overlapped wafer T (step S103, also refer to Figure 6 (B)). As in Figure 8 (A)~ Figure 8 As described in (F) of FIG5 , during the cut-in portion forming operation according to the embodiment, the overlapping wafer T is positioned in the circumferential direction, thereby performing multiple embedding operations throughout the entire circumference of the overlapping wafer T. Furthermore, when forming the cut-in portion CP, the suction and peeling unit 40 does not suction the upper wafer W1. Thus, the peeling device 7 can efficiently rotate the overlapping wafer T during the multiple embedding operations.

[0116] Furthermore, it is preferred that the peeling guide 60 does not retract the blade 61 at the location where the cutting portion CP is finally formed, so that the blade 61 is placed in a waiting state during the peeling operation. Thus, the peeling device 7 can start peeling the upper wafer W1 from the lower wafer W2 from the Y-axis negative side, with the upper wafer W1 resting on the blade 61, at the start of the peeling operation.

[0117] Next, the peeling device 7 operates the pair of lifting mechanisms 42 to lower the plurality of suction bodies 45 of the upper suction group 44, so that the suction bodies 45 suction the non-bonding surface W1n of the upper wafer W1 (step S104). Furthermore, the upper suction group 44 may suction the upper wafer W1 before step S103 to hold the upper wafer W1 during the cutting portion formation operation.

[0118] Next, the peeling device 7 switches to the peeling operation, raising the Y-axis negative side of the upper suction group 44 to separate the upper wafer W1 on the Y-axis negative side from the lower wafer W2 (step S105). Specifically, by raising the shaft 422 of the lifting mechanism 42 on the Y-axis negative side of the pair of lifting mechanisms 42, each suction body 45 on the Y-axis negative side is raised (see also Figure 6 (C)). As a result, the upper wafer W1 on the negative side of the Y axis begins to peel off from the lower wafer W2. At this time, a Figure 6 Therefore, the upper suction group 44 can lift the upper wafer W1 so as to roll it up from the negative side of the Y axis.

[0119] When the lifting mechanism 42 on the negative side of the Y axis rises to a certain extent, the peeling device 7 starts to lift the lifting mechanism 42 on the positive side of the Y axis to lift the upper wafer W1 as a whole (step S106, also refer to Figure 6(D)). In this stage, the upper wafer W1 is peeled off from the lower wafer W2 toward a position on the positive side of the Y axis relative to the center of the overlapping wafer T. Therefore, the peeling device 7 can raise the upper wafer W1 while suppressing damage to the upper wafer W1, thereby supporting the upper wafer W1 horizontally at the holding position.

[0120] Afterwards, the stripping system 100 proceeds to the unloading process (step S107) of unloading the upper wafer W1 and the lower wafer W2 after being unloaded from the stripping device 7. During the unloading process, the stripping device 7 returns the stripping guide 60 to the initial position and lowers the lower holding plate 51. Afterwards, the stripping device 7 releases the adsorption of the lower holding plate 51 on the lower wafer W2 and the adsorption of the frame holding portion 54, and raises the plurality of lifting pins to float the lower wafer W2 from the adsorption surface 51s. The stripping system 100 causes the second conveying device 6 to enter under the lower wafer W2, and as the lifting pins descend, the lower wafer W2 is handed over to the second conveying device 6, and the lower wafer W2 is unloaded from the stripping device 7. In addition, the stripping device 7 holds the upper wafer W1 held by each adsorption body 45 of the upper adsorption group 44 at the holding exchange position through the handover holding portion 47. The peeling system 100 sucks and holds the non-bonding surface W1n of the upper wafer W1 by the second conveying device 6 that enters the vertically upper side of the suction pads 472 of the transfer holding portion 47 , and carries the upper wafer W1 out of the peeling device 7 via the second conveying device 6 .

[0121] As described above, the stripping device 7 forms a cutting portion CP with a length longer than the length of the long side direction of the blade 61 along the circumference of the overlapping wafer T before the stripping action, thereby reducing the bonding force between the outer peripheral portion of the upper wafer W1 and the outer peripheral portion of the lower wafer W2 (or making the bonding force zero). In other words, there is no portion where the upper wafer W1 and the lower wafer W2 are tightly fitted together on the outer edge of the overlapping wafer T, so that it is possible to avoid undesirable situations such as the upper wafer W1 or the lower wafer W2 being damaged based on this portion during the stripping action. In particular, the stripping device 7 forms multiple cutting portions CP in the circumference of the overlapping wafer T by repeatedly performing the embedding action, thereby being able to stably form deep cutting portions in the radial direction of the overlapping wafer T.

[0122] In addition, during the embedding action, the stripping device 7 rotates the lifting mechanism 53 to shift the lower wafer W2 in the stripping direction (vertically downward), thereby forming a deeper cutting portion CP to make the outer periphery of the upper wafer W1 and the outer periphery of the lower wafer W2 diverge. As a result, the bonding force at the outer edge of the overlapping wafer T is more reliably reduced. Moreover, after forming the cutting portion CP, the stripping device 7 resets the positions of the upper wafer W1 and the lower wafer W2 while retracting the blade 61, thereby easily forming the next cutting portion CP. In addition, the stripping device 7 changes the insertion amount of the blade 61 at different positions on the circumference of the overlapping wafer T, for example, it can form a deep cutting portion CP at a location with strong bonding force. As a result, the stripping device 7 can perform the stripping of the overlapping wafer T more stably.

[0123] After the cut is formed, the peeling device 7 performs a peeling operation by sucking the peeling portion 40 to separate the upper wafer W1 from the lower wafer W2. This allows for smooth peeling of the upper and lower wafers W1 and W2. In particular, the peeling guide 60 maintains the blade 61 inserted between the upper and lower wafers W1 and W2 at the start of the peeling operation, effectively separating the upper wafer W1 from the lower wafer W2 at the start of the peeling operation.

[0124] Furthermore, the peeling device 7 forms the cutout portion CP over the entire circumference of the overlapped wafer T, thereby reducing the bonding force of the entire outer edge of the overlapped wafer T.

[0125] Furthermore, the peeling device 7 of the present disclosure is not limited to the above-described embodiment and can adopt various modifications. For example, the peeling device 7 can also peel the upper wafer W1 from the lower wafer W2 by holding the overlapping wafers T without the dicing frame F and dicing tape P on the lower holding plate 51. In this case, the peeling device 7 can also be omitted from the pressing portion 48, the frame holding portion 54, etc.

[0126] In addition, if Figure 10 (A)~ Figure 10 As shown in (C), the peeling device 7 may not form the cut portion CP over the entire circumference of the overlapped wafer T during the cut portion forming operation. Figure 10 (A) shows a stripping method of a first modified example in which a cut-in portion CP is formed in the range from the Y-axis negative side to the Y-axis middle of the overlapping wafer T, and no cut-in portion CP is formed in the range from the Y-axis middle to the Y-axis positive side. In this case, the bonding force of the overlapping wafer T can also be reduced in the first half of the stripping action in which a large force is easily applied to the upper wafer W1. Therefore, the damage to the upper wafer W1 can be suppressed during the stripping action, thereby smoothly stripping. In addition, the stripping device 7 may not form the cut-in portion CP at the portion where the incision N is present, but may form the cut-in portion CP at other portions.

[0127] Figure 10 (B) shows a second modified example of a stripping method in which information about the crack-prone areas of the upper wafer W1 is stored in advance through experiments and simulations, and a cutting portion CP is formed in the crack-prone areas, while no cutting portion CP is formed in other areas. This allows the stripping method to more efficiently form the cutting portion, and to prevent damage to the upper wafer W1 during the stripping operation.

[0128] and, Figure 10 (C) shows the operation of placing the upper wafer W1 on the blade 61 without lowering the lower wafer W2 during the embedding operation (see also Figure 8 A third variant of the peeling method is described, wherein the cut-in portion CP is formed radially inward from the outer edge of the overlapped wafer T. The cut-in portion CP is formed shallowly from the outer edge of the overlapped wafer T to the inner side. In this case, the bonding force at the outer edge of the overlapped wafer T can be reduced to a certain extent. Furthermore, a single embedding operation can be completed in a short time, which improves the overall efficiency of the peeling method even when multiple embedding operations are performed.

[0129] In addition, for example Figure 11 As in the fourth modification shown in (A), the peeling device 7 can also change the circumferential position of the overlapping wafer T by rotating the overlapping wafer T by rotating the lifting mechanism 53 while the blade 61 of the peeling guide 60 is inserted into the outer edge of the overlapping wafer T. Thereby, the peeling device can form a cutting portion CP that is continuous in the circumferential direction. In addition, in this case, the blade 61 of the peeling guide 60 can have a blade tip that is inclined when viewed from above. The peeling device 7 does not need to repeatedly perform the embedding action of moving the blade 61 forward and backward, and can more efficiently reduce the bonding force at the outer edge of the overlapping wafer T.

[0130] And, for example Figure 11 As shown in the fifth modification of FIG (B), when there is a portion with a strong bonding force on the outer edge of the overlapping wafers T, the peeling device 7 can advance (insert) and retreat the blade 61 multiple times at the same portion in the circumferential direction. Figure 11 As shown in the upper figure of (B), a shallow incision site CP1 is formed in the first insertion action, as shown in FIG. Figure 11 As shown in the lower diagram of FIG. 2 (B), a deep cut portion CP2 is formed in the second embedding operation. As a result, even if the upper wafer W1 and the lower wafer W2 are strongly bonded, the peeling device 7 can reliably form the cut portion there.

[0131] The peeling method and peeling device 7 disclosed in the embodiments herein are illustrative in all respects and are not restrictive. The embodiments may be modified and improved in various ways without departing from the scope of the appended claims and their spirit. The various embodiments described above may also adopt other configurations and may be combined within the scope of non-inconsistency.

[0132] Description of Reference Numerals

[0133] 7: Peeling device; 8: Control device; 50: Holding portion; 60: Peeling guide portion; 61: Blade; 80: Control device; T: Overlapping wafer (overlapping substrate); W1: Upper wafer (first substrate); W2: Lower wafer (second substrate).

Claims

1. A peeling device for peeling a superposed substrate formed by bonding a first substrate and a second substrate, the peeling device comprising: a holding portion that holds the superimposed substrate and is capable of rotating the superimposed substrate in a circumferential direction; a peeling guide having a blade, wherein the blade is inserted between the first substrate and the second substrate from a side of the superimposed substrate held by the holding portion to form a cutting portion; and control device, in, The control device controls the holding portion and the peeling guide portion to form the cutting portion having a length longer than a length of the blade in the longitudinal direction along the circumferential direction of the superimposed substrate.

2. The peeling device according to claim 1, wherein: The control device changes the circumferential position of the superposed substrate via the holding portion so as to insert the blade into the superposed substrate multiple times via the peeling guide portion, thereby forming a plurality of the cutting locations.

3. The peeling device according to claim 2, wherein: The holding portion is capable of displacing the held superposed substrates in a peeling direction perpendicular to the inserting direction of the blade. The control device controls the first substrate and the second substrate to move away from each other by displacing the holding portion in the peeling direction in a state where the blade is inserted between the first substrate and the second substrate of the superimposed substrate.

4. The peeling device according to claim 3, wherein: After the incision portion is formed, the control device retracts the blade while resetting the positions of the first substrate and the second substrate via the holding portion.

5. The peeling device according to claim 2, wherein: The control device changes the insertion amount of the blade at different positions in the circumferential direction of the superimposed substrates. The peeling device according to claim 1 , wherein: The control device controls the holding portion to change the circumferential position of the superposed substrate in a state where the blade is inserted into the superposed substrate by the peeling guide, thereby forming the cut portion continuous in the circumferential direction.

7. The peeling device according to any one of claims 1 to 6, wherein: further comprising an adsorption and peeling section for adsorbing the first substrate of the superimposed substrates held by the holding section, After forming the cut portion having a length longer than the longitudinal length of the blade, the control device controls a peeling operation of separating the first substrate from the second substrate by the suction peeling section.

8. The stripping device according to claim 7, wherein: The adsorption and peeling section performs the peeling operation of separating the first substrate from the direction in which the blade is arranged toward the opposite side of the superimposed substrates. The peeling guide maintains the blade inserted between the first substrate and the second substrate at the start of the peeling operation.

9. The peeling device according to claim 7, wherein: When the cut portion is formed, the adsorption and peeling section does not adsorb the first substrate.

10. The peeling device according to any one of claims 1 to 6, wherein: The peeling guide forms the cutout portion over the entire circumference of the superimposed substrate.

11. The peeling device according to any one of claims 1 to 6, wherein: The superimposed substrate is arranged inside the cutting frame and is attached to a cutting tape fixed to the cutting frame. The stripping device comprises: a pressing portion, which presses the cutting frame; a frame holding portion for holding the pressed cutting frame, The control device forms the incision portion using the peeling guide while the dicing frame is held by the frame holding portion.

12. A peeling method for peeling a superposed substrate formed by bonding a first substrate and a second substrate, the peeling method comprising the following steps: Step (A), holding the superimposed substrates by a holding portion that is rotatable in a circumferential direction; and Step (B), after step (A), forming a cutting portion by inserting a blade of a peeling guide portion between the first substrate and the second substrate from a side of the superimposed substrate held by the holding portion, in, In the step (B), the holding portion and the peeling guide portion are controlled by a control device to form the cut portion having a length longer than the longitudinal length of the blade along the circumferential direction of the superimposed substrates.

13. The stripping method according to claim 12, wherein: After the step (B), the method further includes a step (C) in which the first substrate of the superimposed substrate held by the holding portion is adsorbed by an adsorption and separation portion to separate the first substrate from the second substrate.

Images