Semiconductor memory device

Abstract

According to one embodiment, a semiconductor memory device includes a first substrate, a mold resin, and a memory chip. The first substrate has a first surface and a second surface on the opposite side of the first surface. The mold resin covers the first surface when viewed from the thickness direction of the first substrate. The memory chip is disposed between the first surface and the mold resin. The first substrate includes a terminal provided on the second surface and exposed to the outside. The terminal has a first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, the first recesses and the first protrusions being alternately arranged.

Description

Technical Field

[0001] An embodiment of the present invention relates to a semiconductor memory device. Background Art

[0002] A semiconductor memory device including a substrate, a memory chip mounted on a first surface of the substrate, and a plurality of terminals provided on a second surface of the substrate is known (see, for example, US Patent Application Publication No. 2022 / 0059493). Summary of the Invention

[0003] A semiconductor memory device according to one embodiment includes a first substrate, a mold resin, and a memory chip. The first substrate has a first surface and a second surface located opposite to the first surface. The mold resin covers the first surface when viewed in the thickness direction of the first substrate. The memory chip is arranged between the first surface and the mold resin. The first substrate includes a terminal provided on the second surface and exposed to the outside. The terminal includes: a first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the first recesses and the first protrusions are arranged alternately. BRIEF DESCRIPTION OF THE DRAWINGS

[0004] Figure 1 This is a diagram showing a semiconductor memory device according to the first embodiment.

[0005] Figure 2 This is a cross-sectional view showing the semiconductor memory device according to the first embodiment.

[0006] Figure 3 It is along Figure 1 sectional view of the semiconductor memory device shown in FIG. 1 along the line F3 - F3.

[0007] Figure 4 This is a perspective view showing terminals of the semiconductor memory device according to the first embodiment.

[0008] Figure 5A This is a diagram showing terminals of the semiconductor memory device according to the first embodiment.

[0009] Figure 5B This is a diagram showing terminals of the semiconductor memory device according to the first embodiment.

[0010] Figure 5C This is a diagram showing terminals of the semiconductor memory device according to the first embodiment.

[0011] Figure 6 This is a plan view showing a substrate of a host device according to the first embodiment.

[0012] Figure 7This is a perspective view showing a first state when the semiconductor memory device according to the first embodiment is mounted.

[0013] Figure 8 This is a perspective view showing a second state when the semiconductor memory device according to the first embodiment is mounted.

[0014] Figure 9 This is a perspective view showing a third state when the semiconductor memory device according to the first embodiment is mounted.

[0015] Figure 10 It is a cross-sectional view showing the method for manufacturing the semiconductor memory device according to the first embodiment.

[0016] Figure 11 It is a cross-sectional view showing the method for manufacturing the semiconductor memory device according to the first embodiment.

[0017] Figure 12 It is a cross-sectional view showing the method for manufacturing the semiconductor memory device according to the first embodiment.

[0018] Figure 13A This is a diagram showing terminals of a semiconductor memory device according to a first modification of the first embodiment.

[0019] Figure 13B This is a diagram showing terminals of a semiconductor memory device according to a first modification of the first embodiment.

[0020] Figure 14A This is a diagram showing terminals of a semiconductor memory device according to a second modification of the first embodiment.

[0021] Figure 14B This is a diagram showing terminals of a semiconductor memory device according to a second modification of the first embodiment.

[0022] Figure 15A This is a diagram showing terminals of a semiconductor memory device according to a second modification of the first embodiment.

[0023] Figure 15B This is a diagram showing terminals of a semiconductor memory device according to a second modification of the first embodiment.

[0024] Figure 16A This is a diagram showing terminals of a semiconductor memory device according to a third modification of the first embodiment.

[0025] Figure 16B This is a diagram showing terminals of a semiconductor memory device according to a third modification of the first embodiment.

[0026] Figure 17 It is a perspective view showing terminals of the semiconductor memory device according to the second embodiment.

[0027] Figure 18A This is a diagram showing terminals of a semiconductor memory device according to a second embodiment.

[0028] Figure 18B This is a diagram showing terminals of a semiconductor memory device according to a second embodiment.

[0029] Figure 18C This is a diagram showing terminals of a semiconductor memory device according to a second embodiment.

[0030] Figure 19A This is a diagram showing terminals of a semiconductor memory device according to a first modification of the second embodiment.

[0031] Figure 19B This is a diagram showing terminals of a semiconductor memory device according to a first modification of the second embodiment.

[0032] Figure 20A This is a diagram showing terminals of a semiconductor memory device according to a second modification of the second embodiment.

[0033] Figure 20B This is a diagram showing terminals of a semiconductor memory device according to a second modification of the second embodiment.

[0034] Figure 21A This is a diagram showing terminals of a semiconductor memory device according to a second modification of the second embodiment.

[0035] Figure 21B This is a diagram showing terminals of a semiconductor memory device according to a second modification of the second embodiment.

[0036] Figure 22A This is a diagram showing terminals of a semiconductor memory device according to a third modification of the second embodiment.

[0037] Figure 22B This is a diagram showing terminals of a semiconductor memory device according to a third modification of the second embodiment.

[0038] Figure 23A This is a diagram showing terminals of a semiconductor memory device according to a fourth modification of the second embodiment.

[0039] Figure 23B This is a diagram showing terminals of a semiconductor memory device according to a fourth modification of the second embodiment.

[0040] Figure 24 This is a diagram showing terminals of a semiconductor memory device according to a fifth modification of the second embodiment.

[0041] Figure 25 This is a diagram showing terminals of a semiconductor memory device according to a sixth modification of the second embodiment.

[0042] Figure 26 This is a diagram showing terminals of a semiconductor memory device according to a seventh variation of the second embodiment.

[0043] Figure 27A This is a diagram showing terminals of a semiconductor memory device according to the eighth modification of the second embodiment.

[0044] Figure 27B This is a diagram showing terminals of a semiconductor memory device according to the eighth modification of the second embodiment.

[0045] Figure 28A This is a diagram showing terminals of a semiconductor memory device according to a ninth variation of the second embodiment.

[0046] Figure 28B This is a diagram showing terminals of a semiconductor memory device according to a ninth variation of the second embodiment.

[0047] Figure 29A This is a diagram showing terminals of a semiconductor memory device according to a tenth variation of the second embodiment.

[0048] Figure 29B This is a diagram showing terminals of a semiconductor memory device according to a tenth variation of the second embodiment.

[0049] Figure 30 This is a diagram showing a semiconductor memory device according to a third embodiment.

[0050] Figure 31A This is a diagram showing a semiconductor memory device according to a third embodiment.

[0051] Figure 31B This is a diagram showing a semiconductor memory device according to a third embodiment.

[0052] Figure 32A This is a diagram showing a semiconductor memory device according to a fourth embodiment.

[0053] Figure 32B This is a diagram showing a semiconductor memory device according to a fourth embodiment.

[0054] Figure 33A A diagram showing a semiconductor memory device according to a modified example of the first to fourth embodiments.

[0055] Figure 33B A diagram showing a semiconductor memory device according to a modified example of the first to fourth embodiments. DETAILED DESCRIPTION

[0056] The following describes a semiconductor memory device according to an embodiment of the present invention with reference to the accompanying drawings. In the following description, components having identical or similar functions are denoted by identical reference numerals. Furthermore, duplicate descriptions of these components may be omitted. In the following description, reference numerals with a trailing number or letter may have the trailing number or letter omitted if they are not distinguishable.

[0057] In this application, the terms are defined as follows. "Parallel," "orthogonal," or "identical" may include "substantially parallel," "substantially orthogonal," or "substantially identical," respectively. "Connected" is not limited to mechanical connection and may include electrical connection. In other words, "connected" is not limited to situations where the connection objects, i.e., two elements, are directly connected, but may also include situations where the connection objects, i.e., two elements, are connected with another element interposed therebetween. Furthermore, "connected" is not limited to situations where they are coupled, but may also include situations where they are merely in contact.

[0058] The X direction, Y direction, and Z direction are defined as follows. The X direction and the Y direction are along the first surface 11a of the substrate 11 described later (refer to Figure 2 The X direction is from the area A1 to the area A2 (see Figure 1 The Y direction is a direction that intersects (e.g., is perpendicular to) the X direction. The Z direction is a direction that intersects (e.g., is perpendicular to) the X direction and the Y direction. The Z direction is, for example, the thickness direction of the substrate 11. The X direction is an example of a "first direction." The Y direction is an example of a "second direction."

[0059] In addition, in each figure described below, the content of the part accompanied by the text "bb section" represents the section along the bb line shown in (a) of the figure, and the content of the part accompanied by the text "cc section" represents the section along the cc line shown in (a) of the figure.

[0060] (First embodiment)

[0061] <1. External Structure of a Semiconductor Memory Device>

[0062] Figure 1 This is a diagram showing a semiconductor memory device 10 according to the first embodiment. Figure 1 (a) in FIG. 1 shows one surface of the semiconductor memory device 10 . Figure 1 (b) shows a side surface of the semiconductor memory device 10 . Figure 1 (c) in FIG. 1 shows the other surface of the semiconductor memory device 10 .

[0063] The semiconductor storage device 10 is, for example, a semiconductor storage device such as an SSD (Solid State Drive). The semiconductor storage device 10 has, for example, a SiP (System in Package) structure. The semiconductor storage device 10 is installed in a host machine. The semiconductor storage device 10 is used as a storage device of the host machine. The host machine is a personal computer, a mobile device, a video recorder, or an in-vehicle machine, but the host machine is not limited to these examples. The following describes the installation of the semiconductor storage device 10 in the host machine HS (refer to Figure 6 ) is used as an example to illustrate.

[0064] Semiconductor storage device 10 is, for example, a card-type semiconductor storage device such as a memory card. For example, semiconductor storage device 10 has a length L in the X direction, a width W in the Y direction, and a thickness T in the Z direction. Length L is greater than width W. An example of length L is 18 mm ± 0.10 mm. An example of width W is 14 mm ± 0.10 mm. An example of thickness T is 1.4 mm ± 0.10 mm. However, these specifications and numerical values ​​do not limit the scope of this embodiment.

[0065] like Figure 1 As shown, the semiconductor memory device 10 includes a first main surface 10sa, a second main surface 10sb, a first end surface 10sc, a second end surface 10sd, a first side surface 10se, and a second side surface 10sf.

[0066] The first and second principal surfaces 10sa and 10sb are the widest of the six surfaces. The second principal surface 10sb is located on the opposite side of the first principal surface 10sa. The first and second principal surfaces 10sa and 10sb are spaced apart in the Z direction. The first and second principal surfaces 10sa and 10sb extend in the X and Y directions. Multiple terminals 41, described below, are provided on the second principal surface 10sb. These terminals 41 are exposed to the outside of the second principal surface 10sb.

[0067] The first end surface 10sc and the second end surface 10sd are spaced apart in the X direction. The first end surface 10sc and the second end surface 10sd extend in the Y direction and the Z direction. The first end surface 10sc connects one end of the first principal surface 10sa in the X direction to one end of the second principal surface 10sb in the X direction. The second end surface 10sd connects the other end of the first principal surface 10sa in the X direction to the other end of the second principal surface 10sb in the X direction.

[0068] The first side surface 10se and the second side surface 10sf are spaced apart in the Y direction. The first side surface 10se and the second side surface 10sf extend in the X direction and the Z direction. The first side surface 10se connects one end of the first principal surface 10sa in the Y direction to one end of the second principal surface 10sb in the Y direction. The second side surface 10sf connects the other end of the first principal surface 10sa in the Y direction to the other end of the second principal surface 10sb in the Y direction.

[0069] In this embodiment, the semiconductor storage device 10 includes regions A1 to A3. Region A1 is located between the center C1 of the semiconductor storage device 10 in the X direction and the first end face 10sc. In region A1, a plurality of terminals 41A are located as terminals 41. The plurality of terminals 41A are arranged in a row in the Y direction. Region A2 is located between the center C1 of the semiconductor storage device 10 in the X direction and region A1. In region A2, a plurality of terminals 41B are located as terminals 41. The plurality of terminals 41B are arranged in a row in the Y direction. Region A3 is located between the center C1 of the semiconductor storage device 10 in the X direction and the second end face 10sd. In region A3, a plurality of terminals 41C are located as terminals 41. The plurality of terminals 41C are arranged in a row in the Y direction.

[0070] <2. Internal Structure of a Semiconductor Memory Device>

[0071] Next, the internal structure of semiconductor memory device 10 will be described.

[0072] Figure 2 1 is a cross-sectional view showing a semiconductor memory device 10. The semiconductor memory device 10 includes, for example, a substrate 11, one or more (eg, multiple) memory chips 12, a controller 13, one or more (eg, multiple) electronic components 14, and a mold resin 15.

[0073] <2.1 Substrate>

[0074] The substrate 11 is a printed substrate. The substrate 11 is in the shape of a plate extending in the X and Y directions. The substrate 11 is an example of a "first substrate." The substrate 11 has a first surface 11a and a second surface 11b. The first surface 11a and the second surface 11b are separated in the Z direction. The first surface 11a and the second surface 11b extend in the X and Y directions. When viewed from the Z direction, the first surface 11a is the surface covered by the mold resin 15. The second surface 11b is the surface located on the opposite side of the first surface 11a. The second surface 11b is exposed to the outside of the semiconductor storage device 10. The second surface 11b forms the second main surface 10sb of the semiconductor storage device 10.

[0075] <2.2 Memory Chip>

[0076] The memory chip 12 is a semiconductor memory chip that stores data nonvolatilely. For example, the memory chip 12 is a NAND flash memory. However, "semiconductor memory" is not limited to NAND flash memory and may also be other types of memory, such as NOR memory, MRAM (Magnetoresistive Random Access Memory), or resistance-variable memory. The memory chip 12 generates heat when the semiconductor storage device 10 is in use.

[0077] The memory chip 12 is disposed between the first surface 11a of the substrate 11 and the mold resin 15. For example, the plurality of memory chips 12 are stacked one on top of the first surface 11a of the substrate 11. Alternatively, instead of being mounted on the first surface 11a of the substrate 11, the memory chips 12 may be stacked from the opposite side of the substrate 11 above the controller 13. The plurality of memory chips 12 are electrically connected to the first surface 11a of the substrate 11 via bonding wires BW, for example.

[0078] <2.3 Controller>

[0079] The controller 13 is a control component mounted on the substrate 11. The controller 13 comprehensively controls the entire semiconductor memory device 10. The controller 13 controls write operations or read operations on the multiple memory chips 12. The controller 13 is, for example, a controller chip that integrates control functions into a single semiconductor chip. The controller 13 is a semiconductor package. This semiconductor package, for example, includes an SoC (System on a Chip) that integrates a host interface circuit for communicating with a host device, a control circuit for controlling the multiple memory chips 12, and a control circuit for controlling a DRAM (Dynamic Random Access Memory) (not shown) into a single semiconductor chip. The controller 13 is arranged between the first surface 11a of the substrate 11 and the mold resin 15. The controller 13 is, for example, mounted on the first surface 11a of the substrate 11. The controller 13 generates heat when the semiconductor memory device 10 is in use.

[0080] <2.4 Electronic Components>

[0081] The electronic component 14 is mounted on the first surface 11a of the substrate 11. The electronic component 14 is a capacitor, a resistor, or the like.

[0082] <2.5 mold resin>

[0083] The mold resin 15 is a sealing member provided on the first surface 11a of the substrate 11. The mold resin 15 is formed of an insulating material and integrally seals, for example, the plurality of memory chips 12, the controller 13, and the plurality of electronic components 14.

[0084] Mold resin 15 includes a first surface 15a and a second surface 15b. First surface 15a is in contact with first surface 11a of substrate 11. Second surface 15b is located opposite first surface 15a. Second surface 15b extends in the X and Y directions. Second surface 15b forms first main surface 10sa of semiconductor memory device 10.

[0085] <3. Substrate Structure>

[0086] Next, the structure of the substrate 11 will be described.

[0087] like Figure 2 As shown, the substrate 11 is, for example, a multilayer circuit board and includes an insulating base material 21 and a wiring pattern 22 .

[0088] The insulating substrate 21 is an insulating substrate that forms the base of the substrate 11. The insulating substrate 21 is formed, for example, from a hard insulating material such as epoxy glass. However, the material of the insulating substrate 21 is not limited to this example. The insulating substrate 21 may also be formed from a paper-phenol material, a composite material, a fluorine-based material, or a polyimide material.

[0089] In the present embodiment, the insulating base material 21 includes a core material 21A and a prepreg 21B laminated on the core material 21A. The prepreg 21B is located on the second surface 11b side relative to the core material 21A. In addition, the substrate 11 is not limited to a multilayer circuit board and can also be a double-sided substrate. In other words, the insulating base material 21 can also be formed only by the core material 21A without the prepreg 21B. Therefore, in the following description, the "insulating base material 21" can be replaced with the "core material 21A", and the "surface 21s of the insulating base material 21" can be replaced with the "surface 21s of the core material 21A".

[0090] The wiring pattern 22 is a conductive portion provided on the substrate 11. The wiring pattern 22 includes at least one wiring 22L provided inside the insulating base material 21 and on the surface of the substrate 11. The wiring pattern 22 is formed of a metal material such as copper, for example.

[0091] <4. Structure of the Surface Layer of the Substrate>

[0092] Next, the surface layer portion 30 of the substrate 11 will be described.

[0093] Figure 3 It is along Figure 1 FIG. 1 is a cross-sectional view of the semiconductor memory device 10 taken along line F3-F3. Figure 3 In the figure, for the sake of convenience, the shape of the terminal 41 (the number of the concave portion 61 and the convex portion 62 described later) is schematically shown. Figure 3As shown, the substrate 11 has a surface portion 30. The surface portion 30 is a portion that is laminated on the insulating base material 21 and forms the second surface 11b of the substrate 11. The surface portion 30 includes a conductive pattern 31 and a solder resist layer 32.

[0094] The conductive pattern 31 is a conductive portion included in the surface portion 30 as a part of the wiring pattern 22. The conductive pattern 31 has a plurality of terminals 41 ( Figure 3 Only one is shown in the figure) and multiple wirings 42.

[0095] (terminal)

[0096] The plurality of terminals 41 are terminals exposed to the outside of the semiconductor storage device 10 for electrical connection to the host machine HS. Each terminal 41 is, for example, a contact pin 92 (see FIG. 1 ) for contacting the host machine HS. Figure 6 ) are connected to the pads. Multiple terminals 41 are provided, for example, on the surface 21s of the insulating substrate 21. Each terminal 41 is exposed to the outside of the semiconductor memory device 10 through the opening 32h of the solder resist layer 32. Each of the multiple terminals 41 is, for example, a signal terminal, a power terminal, or a ground terminal. Furthermore, some of the multiple terminals 41 may also be test terminals.

[0097] Each terminal 41 includes a main body 45 and a protective film 46. The main body 45 is formed of a metal material (first metal material) such as copper. The protective film 46 is laminated to the main body 45 from the side opposite the insulating substrate 21. The protective film 46 is, for example, a plating layer provided for rust prevention. The protective film 46 is formed of a metal material such as gold or nickel.

[0098] In this embodiment, the protective film 46 includes, for example, a first metal film 46a and a second metal film 46b. The first metal film 46a is laminated on the main body 45. The first metal film 46a is formed of, for example, a metal material (second metal material) such as nickel. Compared to the third metal material described later, the second metal material has superior adhesion to the first metal material (e.g., copper). The second metal material is, for example, nickel, titanium, tantalum, titanium nitride, tungsten, or tungsten nitride.

[0099] The second metal film 46b is laminated on the first metal film 46a from the side opposite to the main body portion 45. The second metal film 46b is exposed to the outside of the semiconductor memory device 10. The second metal film 46b is formed of a metal material (third metal material) such as gold.

[0100] (Wiring)

[0101] The plurality of wirings 42 are wirings included in the surface portion 30 as part of the wirings 22L. The plurality of wirings 42 are provided on the surface 21s of the insulating base material 21. At least part of the plurality of wirings 42 is electrically connected to the terminal 41.

[0102] <4.2 Solder Resist Layer>

[0103] The solder resist layer 32 is an insulating protective layer that protects the conductive pattern 31. The solder resist layer 32 is an example of an "insulating layer." For example, the solder resist layer 32 is provided on the surface 21s of the insulating substrate. The solder resist layer 32 has openings 32h that expose the terminals 41. The solder resist layer 32 covers a portion of the conductive pattern 31. For example, the solder resist layer 32 covers a plurality of wiring lines 42.

[0104] <5. Terminal shape>

[0105] Next, the shape of terminal 41 of semiconductor memory device 10 will be described.

[0106] Figure 4 1 is a perspective view showing a terminal 41 of a semiconductor memory device 10. In the present embodiment, the terminal 41 has a non-planar portion 50. The non-planar portion 50 is an example of a "first non-planar portion."

[0107] In this embodiment, the non-planar portion 50 has a plurality of recesses 51. Figure 4 In the example shown, a plurality of recesses 51 are arranged in a matrix of 10 columns in the X direction and 7 columns in the Y direction. The recess 51 is a bottomed hole portion provided on the surface of the terminal 41. In this embodiment, by providing a plurality of recesses 51, the non-planar portion 50 has a concave-convex structure in which recesses 61 and convex portions 62 are alternately arranged. For example, the recesses 61 and convex portions 62 are alternately arranged in each of the X direction and the Y direction. The recess 61 is an example of a "first recess". The convex portion 62 is an example of a "first convex portion". In addition, in this application, "recesses and convex portions are alternately arranged" means that as long as the total number of recesses and convex portions is 3 or more. For example, a concave-convex structure of two recesses and one convex portion defined between the two recesses, or a concave-convex structure of two convex portions and one recess defined between the two convex portions, both meet the example of the "structure in which recesses and convex portions are alternately arranged" mentioned in this application. In addition, the non-planar portion 50 does not need to be provided over the entire area of ​​the terminal 41 , and may be provided only over a portion of the terminal 41 .

[0108] <5.1 Shape of concave portion>

[0109] Figures 5A to 5CThis figure shows terminal 41 of semiconductor storage device 10. Recess 61 is formed by depression 51. In other words, "recess 61" can be replaced with "recess 51." Multiple recesses 61 are arranged at equal intervals P1 in the X direction. The width of recess 61 in the X direction is, for example, the same as or greater than interval P1. Furthermore, multiple recesses 61 are arranged at equal intervals P2 in the Y direction. The width of recess 61 in the Y direction is, for example, the same as or greater than interval P2. Recess 61 is polygonal when viewed from the Z direction. In this embodiment, recess 61 is a quadrilateral when viewed from the Z direction. However, recess 61 may be a polygon with a triangle or a pentagon or larger shape, a linear shape, or a circular shape. The depth of recess 61 is, for example, greater than 1 μm. In this embodiment, the depth of recess 61 is several μm to several tens of μm. The width of each recess 61 in the X and Y directions is, for example, greater than 1 μm. In the present embodiment, each width of the recess 61 in the X direction and the Y direction is several μm to several hundred μm.

[0110] <5.2 Shape of convex portion>

[0111] The convex portion 62 is defined by providing a plurality of concave portions 61 and is formed between two adjacent concave portions 61. In this application, a "convex portion" means a portion that protrudes away from the insulating substrate 21 relative to the bottom of the concave portion. In this embodiment, the convex portion 62 is defined by the space between two adjacent concave portions 61 in the X direction or the Y direction.

[0112] In this embodiment, the protrusion 62 extends in a direction parallel to the second surface 11b of the substrate 11. For example, the protrusion 62 extends in each straight line in the X direction or the Y direction. For example, the plurality of protrusions 62 include 9 protrusions 62 that are spaced apart from each other in the X direction and extend in the Y direction, and 6 protrusions 62 that are spaced apart from each other in the Y direction and extend in the X direction. Each of the 9 protrusions 62 extends over more than half of the width of the terminal 41 in the Y direction. Each of the 6 protrusions 62 extends over more than half of the width of the terminal 41 in the X direction. At each of the intersections of the 9 protrusions 62 and the 6 protrusions 62, a connection portion is formed that cross-connects the protrusion 62 extending in the X direction and the protrusion 62 extending in the Y direction.

[0113] In this embodiment, the contact pin 92 of the connector 90 of the host machine HS described later has an extension portion 92a and a bent portion 92b. The extension portion 92a extends linearly, gradually approaching the terminal 41. The extension portion 92a extends in the X direction. The bent portion 92b is provided at the distal end of the contact pin 92. The bent portion 92b bends toward the side opposite to the terminal 41. The bent portion 92b is the contact portion of the contact pin 92. In this embodiment, the protrusion 62 of the terminal 41 is in contact with the bent portion 92b of the contact pin 92. In other words, the contact portion CP between the terminal 41 and the contact pin 92 is formed between the protrusion 62 and the bent portion 92b of the contact pin 92. Thus, the terminal 41 is electrically connected to the host machine HS.

[0114] <6. Thermally Conductive Sheet>

[0115] Then, return Figure 1 , the thermally conductive sheet 70 will be described. The thermally conductive sheet 70 is, for example, a sheet having a higher thermal conductivity than the solder resist layer 32. The thermally conductive sheet 70 has, for example, a thermal conductivity of 1.0 W / (m·K) or greater. The thermally conductive sheet 70 is formed, for example, of silicone. When viewed from the Z direction, the thermally conductive sheet 70 is arranged to overlap with the flat area between the area A2 and the area A3 of the semiconductor memory device 10. The thermally conductive sheet 70 is in contact with the second main surface 10sb of the semiconductor memory device 10. In addition, the thermally conductive sheet 70 does not need to be fixed to the semiconductor memory device 10 and may simply be in contact with the semiconductor memory device 10.

[0116] <7. Connector for host device>

[0117] Next, the connector 90 of the host device HS will be described.

[0118] Figure 6 1 is a top view of the substrate 80 of the host machine HS. Hereinafter, for the sake of convenience, the substrate 80 of the host machine HS will be referred to as the "host substrate 80". The host substrate 80 is an example of the "second substrate". The host substrate 80 has a socket-type (for example, a clamshell socket-type) connector 90. The semiconductor storage device 10 can be easily installed on the connector 90 by manual loading and unloading. For example, the semiconductor storage device 10 can be removed from the connector 90 in the event of a failure, etc., and can be easily replaced. The connector 90 has, for example, a connector body 91, a plurality of contact pins 92, and a retaining body 93 (refer to Figure 7 ).

[0119] (Connector body)

[0120] The connector body 91 is the main portion that forms the outer shape of the connector 90. The connector body 91 is fixed to the host substrate 80. The connector body 91 is electrically connected to the host substrate 80. The connector body 91 includes a housing S that can accommodate the semiconductor storage device 10. For example, one side of the connector body 91 in the X direction is open. The connector body 91 includes a wall portion 91a that surrounds the housing S from three directions.

[0121] (Contact pins)

[0122] The plurality of contact pins 92 are terminals provided on the connector 90 for connection to the plurality of terminals 41 of the semiconductor storage device 10. The plurality of contact pins 92 are disposed in the housing portion S. The plurality of contact pins 92 are exposed outside the connector body 91. The plurality of contact pins 92 are disposed at positions corresponding one to one with the plurality of terminals 41 of the semiconductor storage device 10. Each of the plurality of contact pins 92 extends in the X direction. Each of the plurality of contact pins 92 is a pin-type terminal having an elongated shape in the X direction.

[0123] The base end portion of each of the plurality of contact pins 92 is connected to the connector body 91. The base end portion is supported by the connector body 91. Each of the plurality of contact pins 92 is electrically connected to the host substrate 80 via the connector body 91. The tip portion (the bent portion 92b) of each of the plurality of contact pins 92 is located at a height (refer to FIG. 1 ) that is raised from the host substrate 80. Figure 7 Each of the plurality of contact pins 92 is arranged at an angle relative to the surface of the host substrate 80 so that the distal end of each of the plurality of contact pins 92 is further away from the host substrate 80 than the base end. Each of the plurality of contact pins 92 is made of metal and is elastically deformable. In this embodiment, when the semiconductor memory device 10 is mounted on the connector 90, the distal end of each of the plurality of contact pins 92 is pressed toward the host substrate 80 by the semiconductor memory device 10. As a result, each of the plurality of contact pins 92 is elastically deformed. As a result, the distal end of each of the plurality of contact pins 92 is brought into close contact with the terminal 41 of the semiconductor memory device 10 due to the restoring force of the elastic deformation.

[0124] Figure 7 This is a perspective view showing a first state in which semiconductor storage device 10 is mounted. Retaining body 93 is a portion that holds semiconductor storage device 10 when it is mounted on connector 90. Retaining body 93 is rotatably coupled to connector body 91. Retaining body 93 includes, for example, a base end portion 93a, a first support portion 93b1, and a second support portion 93b2.

[0125] The base end portion 93a has a hinge structure and is rotatably connected to the end portion of the connector body 91. The first support portion 93b1 and the second support portion 93b2 are spaced apart in the Y direction and extend in a direction away from the base end portion 93a.

[0126] The first support portion 93b1 has a first portion 94a1 (see Figure 8 ), second portion 94b1 and third portion 94c1. First portion 94a1 is along first main surface 10sa of semiconductor storage device 10. Second portion 94b1 is along first side surface 10se of semiconductor storage device 10. Third portion 94c1 is positioned to engage second main surface 10sb of semiconductor storage device 10.

[0127] Similarly, the second support portion 93b2 has a first portion 94a2 (see Figure 8 ), second portion 94b2, and third portion 94c2. First portion 94a2 extends along first main surface 10sa of semiconductor storage device 10. Second portion 94b2 extends along second side surface 10sf of semiconductor storage device 10. Third portion 94c2 grips second main surface 10sb of semiconductor storage device 10. Semiconductor storage device 10 is mounted on holding body 93 by being inserted between first supporting portion 93b1 and second supporting portion 93b2.

[0128] Figure 8 1 is a perspective view showing a second state when the semiconductor memory device 10 is mounted. The second state shows a state where the holding member 93 is rotated toward the host substrate 80 from the first state. Figure 9 1 is a perspective view showing a third state when the semiconductor memory device 10 is mounted. The third state is when the holding body 93 is further rotated from the second state toward the host substrate 80, and the semiconductor memory device 10 is accommodated in the accommodation portion S of the connector body 91 (see FIG. Figure 8 ) status.

[0129] Thus, after the semiconductor storage device 10 is mounted on the retaining body 93 , the retaining body 93 is rotated toward the host substrate 80 , and the semiconductor storage device 10 is freely mounted on the connector 90 in a state where the terminals 41 of the semiconductor storage device 10 are in contact with the contact pins 92 of the connector 90 .

[0130] <8. Manufacturing Method>

[0131] Next, a method for manufacturing semiconductor memory device 10 will be described.

[0132] Figures 10 to 12 is a cross-sectional view showing a method for manufacturing the semiconductor memory device 10. Figures 10 to 12 , the shape of the terminal 41 (the number of recessed portions 61 and raised portions 62 ) is schematically shown.

[0133] First, if Figure 10 As shown in (a) of FIG. , a surface portion 30A is formed on an insulating substrate 21. Surface portion 30A includes a conductive pattern 31A and a solder resist layer 32A. Conductive pattern 31A is provided on insulating substrate 21. Solder resist layer 32A covers the entire conductive pattern 31A. Conductive pattern 31A includes a main body 45 of terminal 41 and a plurality of wirings 42.

[0134] Then, if Figure 10 As shown in (b) in FIG. 3 , a mask M1 is formed on the solder resist layer 32A. When viewed from the Z direction, the mask M1 has an opening M1h and a cover M1a. The opening M1h is positioned in a manner corresponding to the opening 32h of the solder resist layer 32 formed in the process described later. The cover M1a is positioned in a manner corresponding to the plurality of recesses 51 formed in the process described later. Next, as shown in FIG. Figure 10 As shown in (c) of FIG. , etching is performed using mask M1 to remove a portion of solder resist layer 32A. Thus, solder resist layer 32 having openings 32h is formed. Furthermore, cover portions 32Aa are formed at positions corresponding to the plurality of recesses 51 formed in a later step. As a result, the portion of main body 45 of terminal 41 not covered by cover portion 32Aa is exposed to the outside through opening 32h.

[0135] Then, if Figure 10 As shown in (d) in FIG. 3 , a mask M2 is formed on the solder resist layer 32 by dry film lamination, for example. The mask M2 is provided over the entire solder resist layer 32 except for the opening 32h. The mask M2 has an opening M2h at a position corresponding to the opening 32h of the solder resist layer 32. Next, as shown in FIG. Figure 10 As shown in (e) in FIG. 2 , plating is performed through the opening M2h of the mask M2. Thus, a first plating layer 101 is formed on the portion of the main body 45 of the terminal 41 that is not covered by the cover 32Aa. The first plating layer 101 is formed of, for example, the second metal material.

[0136] Then, if Figure 11 As shown in (f) in FIG, the mask M2 is removed. Then, as shown in FIG. Figure 11 As shown in (g) in FIG. 3 , a mask M3 is formed on the solder resist layer 32. When the mask M3 is viewed from the Z direction, the mask M3 has an opening M3h at a position corresponding to the opening 32h of the solder resist layer 32. Figure 11 As shown in (h) in FIG. 1 , the cover portion 32Aa is removed by etching using the mask M3 .

[0137] Then, if Figure 11As shown in (i) in FIG. 1 , a mask M4 is formed on the solder resist layer 32 by dry film lamination, for example. The mask M4 is provided over the entire solder resist layer 32 except for the opening 32h. The mask M4 has an opening M4h at a position corresponding to the opening 32h of the solder resist layer 32. Figure 11 As shown in (j) in FIG, a plating process is performed through the opening M4h of the mask M4. Thus, a second plating layer 102 is formed over the entire terminal 41. The second plating layer 102 is formed, for example, of the second metal material. The material of the second plating layer 102 is, for example, the same as that of the first plating layer 101. In this case, no visible boundary is retained between the first plating layer 101 and the second plating layer 102. In this embodiment, the first metal film 46a of the protective film 46 is formed by the first plating layer 101 and the second plating layer 102.

[0138] Then, if Figure 12 As shown in (k), a plating process using a third metal material is performed through the opening M4h of the mask M4. Thus, a third plating layer 103 is formed over the entire terminal 41. The third plating layer 103 forms the second metal film 46b of the protective film 46. Thus, the terminal 41 is formed. In this embodiment, the portion of the opening 32h of the solder resist layer 32 where the first plating layer 101 is not provided is formed as a recess 61 (recess 51). Next, as shown in FIG. Figure 12 As shown in (1) in FIG. 4 , the fourth mask M4 is removed. Thus, a series of processes related to the manufacture of the semiconductor memory device 10 are completed.

[0139] <9. Advantages>

[0140] In this embodiment, terminal 41 of semiconductor memory device 10 includes a non-planar portion 50 having a plurality of depressions 51, with depressions 61 and protrusions 62 arranged alternately. This configuration increases the surface area (heat dissipation area) of terminal 41, thereby improving the heat dissipation of semiconductor memory device 10.

[0141] In this embodiment, semiconductor storage device 10 can be detachably mounted on connector 90 with contact pins 92 of connector 90 connected to terminals 41. This configuration improves heat dissipation of semiconductor storage device 10 by utilizing terminals 41 connected to contact pins 92.

[0142] (First Modification of the First Embodiment)

[0143] Next, a first variation of the first embodiment will be described. The first variation differs from the first embodiment in that a flat surface portion 111 is provided in the region of terminal 41 that overlaps with bent portion 92b of contact pin 92. The configuration other than that described below is identical to that of the first embodiment.

[0144] Figure 13A and Figure 13B This is a diagram showing a terminal 41 according to a first modification of the first embodiment. In this modification, the terminal 41 has a first region R1 and a second region R2.

[0145] The first region R1 is a region that at least partially overlaps with the bent portion 92b of the contact pin 92 when viewed from the Z direction. The width of the first region R1 in the Y direction is larger than the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0146] The second region R2 is a region of the terminal 41 that is offset from the first region R1. For example, when viewed from the Z direction, the second region R2 is a region that does not overlap with the bent portion 92b of the contact pin 92, as compared to the first region R1. The second region R2 is located between the first region R1 and the ends of the terminal 41 in the X and Y directions. The second region R2 is, for example, a frame-shaped region surrounding the first region R1.

[0147] In this modification, the second region R2 has the non-planar portion 50. That is, the second region R2 has a concavo-convex structure in which concave portions 61 and convex portions 62 are alternately arranged by providing a plurality of concave portions 51.

[0148] On the other hand, the first region R1 does not have the non-planar portion 50. The first region R1 has a planar portion 111 that is flatter than the non-planar portion 50. The planar portion 111 has a relatively flat surface along the X-direction and the Y-direction. In this embodiment, the planar portion 111 is provided, for example, throughout the entire first region R1. The width of the planar portion 111 in the Y-direction is greater than the width of the protrusion 62 in the Y-direction. The width of the planar portion 111 in the Y-direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y-direction. The width of the contact portion CP between the terminal 41 and the contact pin 92 in the Y-direction is consistent with the width of the bent portion 92b of the contact pin 92 in the Y-direction.

[0149] This configuration allows for a larger contact portion CP between the terminal 41 and the contact pin 92 compared to the first embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0150] (Second Modification of the First Embodiment)

[0151] Next, a second variation of the first embodiment will be described. The second variation differs from the first variation in that a non-planar portion 120 is provided in the region of terminal 41 that overlaps with bent portion 92b of contact pin 92. The configuration other than that described below is identical to that of the first embodiment.

[0152] Figure 14A and Figure 14B This figure shows a terminal 41 according to a second variation of the first embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the non-planar portion 50. That is, the second region R2 has a concave-convex structure in which concave portions 61 and convex portions 62 are alternately arranged by providing a plurality of recesses 51. On the other hand, the first region R1 has a non-planar portion 120. The non-planar portion 120 is an example of a "second non-planar portion."

[0153] In this variation, the non-planar portion 120 has a plurality of recesses 121. Figure 14A and Figure 14B In the example shown, three recesses 121 are arranged in the X direction. When viewed from the Z direction, each recess 121 is a rectangular shape extending linearly in the Y direction. The width of the recess 121 in the Y direction is greater than the width of the recess 121 in the X direction. The recess 121 is a bottomed hole portion provided on the surface of the terminal 41. In this variation, by providing a plurality of recesses 121, the first region R1 has a concave-convex structure in which recesses 131 and convex portions 132 are alternately arranged. The recesses 131 and convex portions 132 are alternately arranged in the X direction. The recess 131 is an example of a "second recess". The convex portion 132 is an example of a "second convex portion".

[0154] (shape of concave portion)

[0155] Recess 131 is formed by recess 121. In other words, "recess 131" can be replaced with "recess 121." Multiple recesses 131 are arranged at equal intervals in the X direction. The width of recess 131 in the X direction is, for example, the same as the width of recess 61 in the X direction. The width of recess 131 in the Y direction is, for example, greater than the width of recess 61 in the Y direction. The width of recess 131 in the Y direction is, for example, greater than the width of recess 131 in the X direction. Recess 131 extends linearly in the Y direction. The width of recess 131 in the Y direction is greater than the width of bent portion 92b of contact pin 92 in the Y direction.

[0156] (shape of convex part)

[0157] The convex portion 132 is defined by the space between two adjacent concave portions 131, formed by providing multiple concave portions 131. In this variation, the convex portion 132 is defined by the space between two adjacent concave portions 131 in the X direction. The width of the convex portion 132 in the X direction is, for example, the same as the width of the convex portion 62 in the X direction. The width of the convex portion 132 in the Y direction is, for example, greater than the width of the convex portion 62 in the Y direction. The width of the convex portion 132 in the Y direction is greater than the width of the convex portion 132 in the X direction. The convex portion 132 extends linearly in the Y direction. The width of the convex portion 132 in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. In this variation, the bent portion 92b of the contact pin 92 contacts the convex portion 132 in the terminal 41. The width of the contact portion CP of the terminal 41 and the contact pin 92 in the Y direction is the same as the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0158] According to this configuration, the contact portion CP between the terminal 41 and the contact pin 92 can be enlarged compared to the first embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0159] In the second modification, a portion of the bent portion 92b of the contact pin 92 may enter the recess 131. Hereinafter, a mode in which a portion of the bent portion 92b of the contact pin 92 enters the recess 131 will be described.

[0160] Figure 15A and Figure 15B 1 is a diagram showing a terminal 41 according to a second variation of the first embodiment. Figure 15A and Figure 15B In the example shown, in this variation, a portion of the bent portion 92b of the contact pin 92 enters a recess 131. Hereinafter, the recess 131 into which the portion of the bent portion 92b enters will be referred to as "recess 131S." In this case, a contact portion CP (first contact portion CP1) is formed at the boundary between recess 131S and convex portion 132. Convex portion 132 is adjacent to recess 131S on one side in the X direction. Furthermore, another contact portion CP (second contact portion CP2) is formed at the boundary between recess 131S and convex portion 132. Convex portion 132 is adjacent to recess 131S on the other side in the X direction.

[0161] According to this configuration, the number of contact portions CP between the terminal 41 and the contact pin 92 can be increased compared to the first embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0162] (Third Modification of the First Embodiment)

[0163] Next, the third variation of the first embodiment will be described. The third variation differs from the second variation of the first embodiment in that an inclined portion 141 is provided around the periphery of the recess 131. The configuration other than that described below is the same as that of the second variation of the first embodiment.

[0164] Figure 16A and Figure 16B 3 is a diagram showing a terminal 41 of a third variation of the first embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The first region R1 has the non-planar portion 120. That is, the first region R1 has a concave-convex structure in which concave portions 131 and convex portions 132 are alternately arranged by providing a plurality of recesses 121. On the other hand, the second region R2 has the non-planar portion 50. That is, the second region R2 has a concave-convex structure in which concave portions 61 and convex portions 62 are alternately arranged by providing a plurality of recesses 51. A portion of the bent portion 92b of the contact pin 92 enters one recess 131 (recess 131S).

[0165] In this variation, an inclined portion 141 is provided on the periphery (e.g., the entire periphery) of the recess 131. For example, the inclined portion 141 is provided in a ring shape along the edges on both sides of the recess 131 in the X direction and the edges on both sides of the recess 131 in the Y direction. From another point of view, the inclined portion 141 is provided on the edges on both sides of the protrusion 132 in the X direction. In addition, the inclined portion 141 only needs to be provided on one edge in the X direction of at least one protrusion 132 that is in contact with the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined relative to the first surface 11a of the substrate 11. The inclined portion 141 is provided in a manner that removes the corner of the protrusion 132. The inclined portion 141 may be a planar inclined portion or an inclined portion having a circular arc. The curved portion 92b of the contact pin 92 is in contact with the inclined portion 141.

[0166] An example of a method for manufacturing the inclined portion 141 is as follows. Figure 11 The (h) process in Figure 11Between steps (i) in the above, the first plating layer 101 is isotropically etched (dry or wet). This forms an inclined portion at the edge of the first plating layer 101. Subsequently, the second plating layer 102 and the third plating layer 103 are formed on the first plating layer 101 having the inclined portion formed thereon by the steps described in the first embodiment. Thus, an inclined portion 141 is formed around the periphery (e.g., the entire periphery) of the recess 131, mimicking the inclined portion formed on the first plating layer 101.

[0167] This configuration increases the size of the contact portion CP between the terminal 41 and the contact pin 92 compared to the first embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0168] (Second embodiment)

[0169] Next, the second embodiment will be described. The second embodiment differs from the first embodiment in that a plurality of protrusions 151 are provided instead of the plurality of recesses 51. The configuration other than that described below is the same as that of the first embodiment.

[0170] Figure 17 FIG. 4 is a perspective view showing the terminal 41 of the semiconductor memory device 10 according to the second embodiment. Figure 17 As shown in FIG. 4 , the terminal 41 has a non-planar portion 50A. The non-planar portion 50A is an example of a “first non-planar portion”.

[0171] The non-planar portion 50A has a plurality of protrusions 151. Each protrusion 151 is a columnar protrusion that protrudes in the Z direction. For example, each protrusion 151 protrudes toward the outside of the semiconductor storage device 10. The plurality of protrusions 151 are arranged in a matrix of, for example, 10 columns in the X direction and 7 columns in the Y direction. In this embodiment, by providing a plurality of protrusions 151, the non-planar portion 50A has a concave-convex structure in which concave portions 61A and convex portions 62A are alternately arranged. For example, the concave portions 61A and the convex portions 62A are alternately arranged in each of the X direction and the Y direction. The concave portion 61A is an example of a "first concave portion". The convex portion 62A is an example of a "first convex portion". In addition, the non-planar portion 50A does not need to be provided in the entire terminal 41, but may be provided only in a partial area of ​​the terminal 41.

[0172] (shape of convex part)

[0173] Figures 18A to 18CThis figure shows the terminal 41 of the semiconductor memory device 10 according to the second embodiment. The protrusion 62A is formed by the projection 151. In other words, in this embodiment, "protrusion 62A" can be replaced by "protrusion 151." Multiple protrusions 62A are arranged at equal intervals P1 in the X direction. The width of the protrusions 62A in the X direction is, for example, the same as or greater than the interval P1. Furthermore, multiple protrusions 62A are arranged at equal intervals P2 in the Y direction. The width of the protrusions 62A in the Y direction is, for example, the same as or greater than the interval P2. The protrusions 62A are polygonal when viewed from the Z direction. For example, the protrusions 62A are quadrilateral when viewed from the Z direction. However, the protrusions 62A may be triangular or pentagonal or larger polygons, linear, or circular. The height of the protrusions 62A is, for example, 1 μm or greater. In this embodiment, the height of the protrusions 62A is several μm to several tens of μm. The width of each of the protrusions 62A in the X and Y directions is, for example, 1 μm or greater. In this embodiment, the width of each of the protrusions 62A in the X and Y directions is several μm to several hundred μm. To ensure the rigidity of the protrusions 62A in contact with the contact pins 92, the aspect ratio of the protrusions is preferably 1 or less.

[0174] (shape of concave portion)

[0175] The recessed portion 61A is defined by providing a plurality of raised portions 62A and is formed between two adjacent raised portions 62A. In this application, a "recessed portion" means a portion that is recessed relative to the distal end of a raised portion toward the insulating substrate 21. In this embodiment, the recessed portion 61A is defined by the space between two adjacent raised portions 62A in the X or Y direction.

[0176] The recesses 61A extend linearly, for example, in the X direction or the Y direction. For example, the plurality of recesses 61A include nine recesses 61A spaced apart from each other in the X direction and extending in the Y direction, and six recesses 61A spaced apart from each other in the Y direction and extending in the X direction.

[0177] According to this configuration, the alternately arranged recesses 61A and protrusions 62A can increase the surface area (heat dissipation area) of the terminal 41 , thereby improving the heat dissipation performance of the semiconductor memory device 10 .

[0178] (First Modification of the Second Embodiment)

[0179] Next, a first variation of the second embodiment will be described. The first variation differs from the second embodiment in that a flat surface portion 111 is provided in the region of terminal 41 that overlaps with bent portion 92b of contact pin 92. The configuration other than that described below is identical to that of the second embodiment.

[0180] Figure 19A and Figure 19B This figure shows a terminal 41 according to a first variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 includes the non-planar portion 50A. Specifically, the second region R2 has a concave-convex structure with alternating recesses 61A and convexities 62A by providing a plurality of protrusions 151.

[0181] On the other hand, first region R1 does not have non-planar portion 50A. First region R1 has planar portion 111 that is flatter than non-planar portion 50A. Planar portion 111 is provided, for example, throughout first region R1. The width of planar portion 111 in the Y direction is greater than the width of protrusion 62A in the Y direction. The width of planar portion 111 in the Y direction is greater than the width of curved portion 92b of contact pin 92 in the Y direction. The width of contact portion CP between terminal 41 and contact pin 92 in the Y direction is equal to the width of curved portion 92b of contact pin 92 in the Y direction.

[0182] This configuration allows for a larger contact portion CP between the terminal 41 and the contact pin 92 compared to the second embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0183] (Second Modification of the Second Embodiment)

[0184] Next, a second variation of the second embodiment will be described. The second variation differs from the second embodiment in that a non-planar portion 120A is provided in the region of the terminal 41 that overlaps with the bent portion 92b of the contact pin 92. The configuration other than that described below is identical to that of the second embodiment.

[0185] Figure 20A and Figure 20B This figure shows a terminal 41 according to a second variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the non-planar portion 50A. In other words, the second region R2 has a concave-convex structure in which recesses 61A and protrusions 62A are alternately arranged by providing a plurality of protrusions 151. On the other hand, the first region R1 has a non-planar portion 120A. The non-planar portion 120A is an example of a "second non-planar portion."

[0186] In this variation, the non-planar portion 120A has a plurality of protrusions 161. Figure 20A and Figure 20BIn the example shown, three protrusions 161 are arranged in the X direction. Each protrusion 161 is a rectangular shape extending linearly in the Y direction when viewed from the Z direction. The width of the protrusion 161 in the Y direction is greater than the width of the protrusion 151 in the Y direction. The protrusion height of the protrusion 161 is the same as the protrusion height of the protrusion 151. In this variation, by providing a plurality of protrusions 161, the first region R1 has a concave-convex structure in which concave portions 131A and convex portions 132A are alternately arranged. The concave portions 131A and the convex portions 132A are alternately arranged in the X direction. The concave portion 131A is an example of a "second concave portion". The convex portion 132A is an example of a "second convex portion".

[0187] (shape of convex part)

[0188] The protrusion 132A is formed by the projection 161. In other words, "protrusion 132A" can be replaced with "protrusion 161." Multiple protrusions 132A are arranged at equal intervals in the X direction. The width of the protrusion 132A in the X direction is, for example, the same as the width of the protrusion 62A in the X direction. The width of the protrusion 132A in the Y direction is, for example, greater than the width of the protrusion 62A in the Y direction. The width of the protrusion 132A in the Y direction is greater than the width of the protrusion 132A in the X direction. The protrusion 132A extends linearly in the Y direction. The width of the protrusion 132A in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. In this variation, the bent portion 92b of the contact pin 92 contacts the protrusion 132A on the terminal 41. The width in the Y direction of the contact portion CP between the terminal 41 and the contact pin 92 is the same as the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0189] (shape of concave portion)

[0190] Recess 131A is defined by the space between two adjacent protrusions 132A by providing a plurality of protrusions 132A. In this variation, recess 131A is defined by the space between two adjacent protrusions 132A in the X direction. The width of recess 131A in the X direction is, for example, the same as the width of recess 61 in the X direction. The width of recess 131A in the Y direction is, for example, greater than the width of recess 61A in the Y direction. The width of recess 131A in the Y direction is greater than the width of recess 131A in the X direction. Recess 131A extends linearly in the Y direction. The width of recess 131A in the Y direction is greater than the width of bent portion 92b of contact pin 92 in the Y direction.

[0191] According to this configuration, the contact portion CP between the terminal 41 and the contact pin 92 can be enlarged compared to the second embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0192] In the second modification, a portion of the bent portion 92b of the contact pin 92 may enter the recess 131A. Hereinafter, a mode in which a portion of the bent portion 92b of the contact pin 92 enters the recess 131A will be described.

[0193] Figure 21A and Figure 21B 1 is a diagram showing a terminal 41 according to a second variation of the second embodiment. Figure 21A and Figure 21B In the example shown, in this variation, a portion of the bent portion 92b of the contact pin 92 enters a recess 131A. Hereinafter, the recess 131A into which the portion of the bent portion 92b enters will be referred to as "recess 131AS." In this case, a contact portion CP (first contact portion CP1) is formed at the boundary between the recess 131AS and the convex portion 132A adjacent to the recess 131AS on one side in the X-direction. Furthermore, another contact portion CP (second contact portion CP2) is formed at the boundary between the recess 131AS and the convex portion 132A adjacent to the recess 131AS on the other side in the X-direction.

[0194] According to this configuration, the number of contact portions CP between the terminal 41 and the contact pin 92 can be increased compared to the second embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0195] (Third Modification of the Second Embodiment)

[0196] Next, a third variation of the second embodiment will be described. The third variation differs from the second embodiment in that an inclined portion 141 is provided around the periphery of the convex portion 62A (protrusion 151). The configuration other than that described below is the same as that of the second embodiment.

[0197] Figure 22A and Figure 22BThis figure shows a terminal 41 according to a third variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. In this variation, each of the first region R1 and the second region R2 has the aforementioned non-planar portion 50A. In other words, each of the first region R1 and the second region R2 has a concave-convex structure with alternating concave portions 61A and convex portions 62A, by providing a plurality of protrusions 151.

[0198] In this variation, an inclined portion 141 is provided on the periphery (e.g., the entire periphery) of the convex portion 62A (protrusion 151) provided in the first region R1. For example, the inclined portion 141 is provided in a ring shape along the edges on both sides of the convex portion 62A in the X direction and the edges on both sides of the convex portion 62A in the Y direction. In addition, the inclined portion 141 only needs to be provided on at least one edge in the X direction of the convex portion 62A that is in contact with the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined relative to the first surface 11a of the substrate 11. The inclined portion 141 is provided in a manner that removes the corner of the convex portion 62A. The inclined portion 141 may be a planar inclined portion or an inclined portion having a circular arc. The curved portion 92b of the contact pin 92 is in contact with the inclined portion 141.

[0199] This configuration increases the size of the contact portion CP between the terminal 41 and the contact pin 92 compared to the second embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0200] (Fourth Modification of the Second Embodiment)

[0201] Next, a fourth variation of the second embodiment will be described. The fourth variation differs from the second embodiment in that an inclined portion 141 is provided around the periphery of the convex portion 132A (protrusion 161). The configuration other than that described below is the same as that of the second embodiment.

[0202] Figure 23A and Figure 23B This figure shows the terminal 41 of the fourth variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. In this variation, the first region R1 has the non-planar portion 120A. That is, the first region R1 has a concave-convex structure in which concave portions 131A and convex portions 132A are alternately arranged by providing a plurality of protrusions 161. On the other hand, the second region R2 has the non-planar portion 50A. That is, the second region R2 has a concave-convex structure in which concave portions 61A and convex portions 62A are alternately arranged by providing a plurality of protrusions 151.

[0203] In this variation, an inclined portion 141 is provided on the periphery (e.g., the entire periphery) of the convex portion 132A (protrusion 161) provided in the first region R1. For example, the inclined portion 141 is provided in a ring shape along the edges on both sides of the convex portion 132A in the X direction and the edges on both sides of the convex portion 132A in the Y direction. In addition, the inclined portion 141 only needs to be provided on one edge in the X direction of at least one convex portion 132A that is in contact with the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined relative to the first surface 11a of the substrate 11. The inclined portion 141 is provided in a manner that removes the corner of the convex portion 132A. The inclined portion 141 may be a planar inclined portion or an inclined portion having a circular arc. The curved portion 92b of the contact pin 92 is in contact with the inclined portion 141.

[0204] This configuration increases the size of the contact portion CP between the terminal 41 and the contact pin 92 compared to the second embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0205] (Fifth Modification of the Second Embodiment)

[0206] Next, a fifth modification of the second embodiment will be described. The fifth modification differs from the second embodiment in that a non-planar portion 170 is provided. The configuration other than that described below is the same as that of the second embodiment.

[0207] Figure 24 This figure shows a terminal 41 according to a fifth modification of the second embodiment. In this modification, the terminal 41 has a first region S1 and a second region S2.

[0208] The first region S1 is a region that, when viewed from the Z direction, at least partially overlaps with the bent portion 92b of the contact pin 92. The width of the first region S1 in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. The width of the first region S1 in the X direction is greater than the width of the first region S1 in the Y direction. The width of the first region S1 in the X direction is, for example, more than half of the width of the terminal 41 in the X direction. The center C2 of the first region S1 in the X direction is located at a position offset to one side in the X direction relative to the center C1 of the terminal 41 in the X direction. The one side is the side that the contact pin 92 is closer to the terminal 41 when the contact pin 92 contacts the terminal 41.

[0209] The second region S2 is a region of the terminal 41 that is offset from the first region S1. For example, when viewed from the Z direction, the second region S2 is a region that does not overlap with the bent portion 92b of the contact pin 92, as compared to the first region S1. The second region S2 is a region located between the first region S1 and the ends of the terminal 41 in the X and Y directions. For example, the second region S2 is a frame-shaped region surrounding the first region S1.

[0210] In this variation, the second region S2 includes the non-planar portion 50A. Specifically, the second region S2 has a concave-convex structure with alternating recesses 61A and convexities 62A by providing a plurality of protrusions 151. Meanwhile, the first region S1 includes a non-planar portion 170. Non-planar portion 170 is an example of a "second non-planar portion."

[0211] In this variation, the non-planar portion 170 has a plurality of protrusions 171. Figure 24 In the example shown, three protrusions 171 are arranged in the Y direction. Each protrusion 171 is a rectangular shape extending linearly in the X direction when viewed from the Z direction. The width of the protrusion 171 in the X direction is greater than the width of the protrusion 151 in the X direction. The protrusion height of the protrusion 171 is the same as the protrusion height of the protrusion 151. In this variation, by providing a plurality of protrusions 171, the first region S1 has a concave-convex structure in which concave portions 181 and convex portions 182 are alternately arranged. The concave portions 181 and the convex portions 182 are alternately arranged in the X direction. The concave portion 181 is an example of a "second concave portion". The convex portion 182 is an example of a "second convex portion".

[0212] (shape of convex part)

[0213] The convex portion 182 is formed by the protrusion 171. In other words, the "convex portion 182" can be replaced by the "protrusion 171". The multiple convex portions 182 are arranged at equal intervals in the Y direction. The width of the convex portion 182 in the Y direction is, for example, the same as the width of the convex portion 62A in the Y direction. The width of the convex portion 182 in the X direction is, for example, greater than the width of the convex portion 62A in the X direction. The width of the convex portion 182 in the X direction is, for example, greater than the width of the convex portion 182 in the Y direction. The convex portion 182 extends linearly along the X direction. The width of the convex portion 182 in the X direction is, for example, more than half of the width of the terminal 41 in the X direction. The center C3 of the convex portion 182 in the X direction is located at a position offset to one side in the X direction relative to the center C1 of the terminal 41 in the X direction. The side is the side that the contact pin 92 is close to the terminal 41 when the contact pin 92 contacts the terminal 41.

[0214] The width of the convex portion 182 in the Y direction is smaller than the width of the bent portion 92b of the contact pin 92 in the Y direction. In this variation, the bent portion 92b of the contact pin 92 contacts the convex portion 182 on the terminal 41. When the terminal 41 contacts the contact pin 92, the contact pin 92 can move along the surface of the convex portion 182 on the convex portion 182 in the X direction.

[0215] (shape of concave portion)

[0216] Recess 181 is defined by the space between two adjacent convex portions 182, formed by providing a plurality of convex portions 182. In this variation, recess 181 is defined by the space between two adjacent convex portions 182 in the Y direction. The width of recess 181 in the Y direction is the same as the width of recess 61A in the Y direction. Recess 181 extends linearly in the X direction. The width of recess 181 in the X direction is, for example, greater than the width of recess 61A in the X direction.

[0217] This configuration improves the rigidity of protrusion 182 against the frictional force in the X direction generated when contacting contact pin 92. This prevents protrusion 182 from collapsing when contacting contact pin 92. Consequently, electrical failures associated with terminal 41 are easily prevented.

[0218] (Sixth variation of the second embodiment)

[0219] Next, a sixth modification of the second embodiment will be described. The sixth modification differs from the second embodiment in that the first region S1 includes a non-planar portion 50. The configuration other than that described below is the same as that of the second embodiment.

[0220] Figure 25 This figure shows a terminal 41 according to a sixth variation of the second embodiment. In this variation, the terminal 41 has a first region S1 and a second region S2. The second region S2 includes the non-planar portion 50A. In other words, the second region S2 has a concave-convex structure with alternating recesses 61A and convexities 62A by providing a plurality of protrusions 151. In this variation, the non-planar portion 50A is an example of a "first non-planar portion."

[0221] On the other hand, the first region S1 includes a protrusion 191 and a non-planar portion 50 provided on the protrusion 191. The protrusion height of the protrusion 191 is the same as the protrusion height of the protrusion 151. The width of the protrusion 191 in the Y direction is greater than the width of the protrusion 151 in the Y direction. The width of the protrusion 191 in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction, for example.

[0222] The width of the protrusion 191 in the X direction is, for example, greater than the width of the protrusion 191 in the Y direction. The width of the protrusion 191 in the X direction is, for example, at least half the width of the terminal 41 in the X direction. The center C5 of the protrusion 191 in the X direction is located at a position offset to one side in the X direction relative to the center C1 of the terminal 41 in the X direction. The side is the side that the contact pin 92 approaches relative to the terminal 41 when the contact pin 92 contacts the terminal 41.

[0223] Non-planar portion 50 is provided on the surface of protrusion 191. That is, protrusion 191 has a concavo-convex structure with concave portions 61 and convex portions 62 arranged alternately by providing a plurality of recesses 51. In this variation, non-planar portion 50 is an example of a "second non-planar portion."

[0224] This configuration improves the rigidity of protrusion 191 against the frictional force in the X direction generated when contacting contact pin 92. This prevents protrusion 191 from collapsing when contacting contact pin 92. Consequently, electrical failures associated with terminal 41 are easily prevented.

[0225] (Seventh Modification of the Second Embodiment)

[0226] Next, the seventh variation of the second embodiment will be described. The seventh variation differs from the sixth variation of the second embodiment in that the recess 61 provided in the protrusion 191 extends linearly in the X direction. The configuration other than that described below is identical to that of the sixth variation of the second embodiment.

[0227] Figure 26 This figure shows a terminal 41 according to a seventh variation of the second embodiment. In this variation, the terminal 41 includes a protrusion 191 and a non-planar portion 50 provided on the protrusion 191. The non-planar portion 50 includes a recessed portion 61 and a protrusion 62 extending linearly in the Y direction. The width of each recessed portion 61 and protrusion 62 in the X direction is, for example, at least half the width of the terminal 41 in the X direction.

[0228] This configuration improves the rigidity of protrusion 191 against the frictional force in the X direction generated when contacting contact pin 92. This prevents protrusion 191 from collapsing when contacting contact pin 92. Consequently, electrical failures associated with terminal 41 are easily prevented.

[0229] (Eighth Modification of the Second Embodiment)

[0230] Next, an eighth modification of the second embodiment will be described. The eighth modification differs from the second embodiment in that the first region R1 includes a protrusion 200. The configuration other than that described below is the same as that of the second embodiment.

[0231] Figure 27A and Figure 27B This figure shows a terminal 41 according to the eighth variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 includes the non-planar portion 50A. Specifically, the second region R2 has a concave-convex structure with alternating concave portions 61A and convex portions 62A by providing a plurality of protrusions 151.

[0232] On the other hand, the first region R1 includes a protrusion 200. The protrusion 200 contacts the curved portion 92b of the contact pin 92. The protrusion 200 is an example of a "supporting portion." In this embodiment, the surface of the protrusion 200 includes a curved surface portion 201 that curves in the same direction as the curved portion 92b. For example, the curved surface portion 201 has an undulating shape with the same curvature as the curved portion 92b. The contact portion CP between the terminal 41 and the contact pin 92 is formed along the curved surface portion 201.

[0233] According to this configuration, the contact portion CP between the terminal 41 and the contact pin 92 can be enlarged compared to the first embodiment. This facilitates heat transfer from the terminal 41 to the contact pin 92. This further improves heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0234] (Ninth Modification of the Second Embodiment)

[0235] Next, a ninth variation of the second embodiment will be described. The ninth variation differs from the second embodiment in that at least a portion of the protrusion 62A has a trapezoidal cross-section. The configuration other than that described below is the same as that of the second embodiment.

[0236] Figure 28A and Figure 28B This figure shows a terminal 41 according to a ninth variation of the second embodiment. In this variation, at least the convex portion 62A (protrusion 151) provided in the first region S1 has a trapezoidal cross-section. In other words, the width of the convex portion 62A in at least one of the X and Y directions gradually increases as it approaches the main body 45.

[0237] This configuration improves the rigidity of the protrusion 62A against the frictional force in the X direction generated when contacting the contact pin 92. This prevents the protrusion 62A from collapsing when contacting the contact pin 92. Consequently, electrical failures associated with the terminal 41 are easily prevented.

[0238] (Tenth variation of the second embodiment)

[0239] Next, a tenth variation of the second embodiment will be described. The tenth variation differs from the second embodiment in that at least a portion of the protrusion 132A has a trapezoidal cross-section. The configuration other than that described below is the same as that of the second embodiment.

[0240] Figure 29A and Figure 29B This figure shows a terminal 41 according to a tenth variation of the second embodiment. In this variation, at least a portion of the raised portion 132A (protrusion 161) has a trapezoidal cross-section. Specifically, the width of the raised portion 62A in at least one of the X and Y directions gradually increases as it approaches the main body 45.

[0241] This configuration improves the rigidity of protrusion 132A against the frictional force in the X direction generated when contacting contact pin 92. This prevents protrusion 132A from collapsing when contacting contact pin 92. Consequently, electrical failures associated with terminal 41 are easily prevented.

[0242] (Third embodiment)

[0243] Next, the third embodiment will be described. The third embodiment differs from the first or second embodiment in that the solder resist layer 32 includes a non-planar portion 310. The configuration other than that described below is the same as that of the first or second embodiment. Terminal 41 of semiconductor memory device 10 in the third embodiment has non-planar portions 50, 50A, 120, 120A, and 170, similarly to any of the first embodiment, the first embodiment's variation, the second embodiment, or the second embodiment's variation.

[0244] Figure 30 This figure shows a semiconductor memory device 10 according to a third embodiment. In this embodiment, solder resist layer 32 has a non-planar portion 310. Non-planar portion 310 is provided in the region between area A2 and area A3. Non-planar portion 310 is an example of a "third non-planar portion." Non-planar portion 310 is covered, for example, by a thermally conductive sheet 70. Thermally conductive sheet 70 is in contact with non-planar portion 310.

[0245] Figure 31A and Figure 31BThis is a diagram showing a semiconductor storage device 10 according to a third embodiment. The surface portion 30 has a non-planar portion 310. The non-planar portion 310 is provided in an area of ​​the surface portion 30 that is offset from the plurality of terminals 41 when viewed from the Z direction. The non-planar portion 310 has a plurality of recesses 311. The plurality of recesses 311 are arranged in a matrix of, for example, 4 columns in the X direction and 8 columns in the Y direction. The recesses 311 are bottomed holes provided in the solder resist layer 32. The recesses 311 reach a position closer to the insulating substrate 21 than a portion of the terminal 41 in the Z direction. For example, the recesses 311 reach the surface 21s of the insulating substrate 21. In this embodiment, by providing the plurality of recesses 311, the non-planar portion 310 has a concave-convex structure in which recesses 321 and convex portions 322 are alternately arranged. For example, the recesses 321 and convex portions 322 are alternately arranged in each of the X and Y directions. The recesses 321 are an example of a "third recess." The protrusion 322 is an example of a “third protrusion.” The details of the non-planar portion 310 are described in the specification of Japanese Patent Application No. 2023-149155. The entire disclosure of the aforementioned document is incorporated herein by reference.

[0246] (Fourth embodiment)

[0247] Next, the fourth embodiment will be described. The fourth embodiment differs from the first or second embodiment in that the solder resist layer 32 includes a non-planar portion 310A. The configuration other than that described below is the same as that of the first or second embodiment. Terminal 41 of semiconductor memory device 10 in the fourth embodiment includes non-planar portions 50, 50A, 120, 120A, and 170, similarly to any of the first embodiment, its variation, the second embodiment, or its variation.

[0248] Figure 32A and Figure 32B This figure shows a semiconductor memory device 10 according to a fourth embodiment. In this embodiment, solder resist layer 32 has a non-planar portion 310A. Non-planar portion 310A is provided in the region between area A2 and area A3. Non-planar portion 310A is an example of a "third non-planar portion." Non-planar portion 310A is covered, for example, by a thermally conductive sheet 70. Thermally conductive sheet 70 is in contact with non-planar portion 310A.

[0249] The non-planar portion 310A is provided in a region of the surface portion 30 that is offset from the plurality of terminals 41 when viewed in the Z direction. The non-planar portion 310A includes a recess 330 and a plurality of protrusions 331. The recess 330 is recessed relative to the regions A2 and A3 toward the insulating substrate 21. The recess 330 reaches a position in the Z direction that is closer to the insulating substrate 21 than a portion of the terminals 41. For example, the recess 330 reaches the surface 21s of the insulating substrate 21.

[0250] A plurality of protrusions 331 are provided in the recess 330. Each protrusion 331 is a columnar protrusion that protrudes along the Z direction inside the recess 330. For example, each protrusion 331 protrudes from the surface 21s of the insulating substrate 21 in a direction away from the insulating substrate 21. The plurality of protrusions 331 are arranged in a matrix shape of, for example, 4 columns in the X direction and 8 columns in the Y direction. In this embodiment, the non-planar portion 310A has a concave-convex structure in which concave portions 321A and convex portions 322A are alternately arranged by providing the plurality of protrusions 331. For example, the concave portions 321A and the convex portions 322A are alternately arranged in each of the X direction and the Y direction. The concave portion 321A is an example of a "third concave portion". The convex portion 322A is an example of a "third convex portion". In addition, the details of the non-planar portion 310A are described in the specification of the Japanese patent application 2023-149155.

[0251] (Modifications common to the first to fourth embodiments)

[0252] Next, modifications common to the first to fourth embodiments will be described.

[0253] Figure 33A and Figure 33B This figure shows a semiconductor memory device 10 according to a variation of the first to fourth embodiments. In this variation, mold resin 15 has a second surface 15b located opposite substrate 11. Second surface 15b has a non-planar portion 410 having alternately arranged recesses 411 and protrusions 412. The recesses 411 and protrusions 412 are alternately arranged in each of the X and Y directions, for example.

[0254] Multiple recesses 411 are arranged at equal intervals in the X direction. Furthermore, multiple recesses 411 are arranged at equal intervals in the Y direction. The provision of multiple recesses 411 defines the convex portion 412 by defining the portion between two adjacent recesses 411. In this application, a "convex portion" refers to a portion that protrudes away from the bottom of the recess 411 and away from the insulating substrate 21. In this embodiment, the convex portion 412 is formed from the same insulating material as the mold resin 15.

[0255] According to this configuration, it is possible to further increase the heat dissipation area of ​​semiconductor memory device 10 , thereby further improving the heat dissipation performance of semiconductor memory device 10 .

[0256] The first to fourth embodiments and their variations have been described above. However, the embodiments and variations are not limited to the examples described above. For example, thermally conductive sheet 70 is not an essential component. Furthermore, semiconductor memory device 10 is not limited to having recesses and protrusions formed solely by a plurality of recesses or a plurality of protrusions. For example, semiconductor memory device 10 may also have recesses and protrusions formed by both a plurality of recesses and a plurality of protrusions.

[0257] In addition, the connector 90 is not limited to a hinged (clamshell) connector. For example, the connector 90 can be a push-pull connector or a push-push connector.

[0258] According to at least one embodiment described above, a semiconductor memory device includes a first substrate, a mold resin, and a memory chip. The first substrate has a first surface and a second surface located on the opposite side of the first surface. The mold resin covers the first surface when viewed from the thickness direction of the first substrate. The memory chip is arranged between the first surface and the mold resin. The first substrate includes a terminal provided on the second surface and exposed to the outside. The terminal includes: a first non-planar portion, the first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, and the first recesses and the first protrusions are arranged alternately. According to this structure, it is possible to seek to improve the heat dissipation performance of the semiconductor memory device.

[0259] Although several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways and can be omitted, replaced, or modified in various ways without departing from the scope of the invention. These embodiments or their variations are included in the scope or spirit of the invention and, likewise, are included in the invention described in the patent application and its equivalents.

[0260] [Explanation of Symbols]

[0261] 10 Semiconductor memory devices

[0262] 11. Substrate (first substrate)

[0263] 11a Page 1

[0264] 11b Page 2

[0265] 12 memory chips

[0266] 15 Mold resin

[0267] 21 Insulation substrate

[0268] 30 Surface

[0269] 41 terminal

[0270] 50,50A Non-planar portion (first non-planar portion)

[0271] 51 Depression

[0272] 61,61A Recessed part (1st recessed part)

[0273] 62,62A convex part (1st convex part)

[0274] 80 substrate (second substrate)

[0275] 90 connector

[0276] 92 contact pins

[0277] 92a Extension

[0278] 92b Bend

[0279] 111 Flat surface

[0280] 120, 120A non-planar portion (second non-planar portion)

[0281] 121 Depression

[0282] 131,131A recess (2nd recess)

[0283] 132,132A convex part (2nd convex part)

[0284] 141 inclined portion

[0285] 151 Protrusion

[0286] 161 protrusion

[0287] 170 non-planar portion (second non-planar portion)

[0288] 171 Protrusion

[0289] 181 concavity

[0290] 182 convex part

[0291] 200 protrusion (supporting part)

[0292] 310, 310A non-planar portion (third non-planar portion)

[0293] 311 Depression

[0294] 321, 321A recess (3rd recess)

[0295] 322, 322A convex part (3rd convex part)

[0296] 331 Protrusion

[0297] R1 Area 1

[0298] R2 Area 2

[0299] S1 Area 1

[0300] S2 Area 2

[0301] HS host machine.

Claims

1. A semiconductor memory device comprising: A first substrate having a first surface and a second surface located opposite to the first surface; a mold resin covering the first surface when viewed in the thickness direction of the first substrate; and A memory chip is disposed between the first surface and the mold resin; and The first substrate includes a terminal provided on the second surface and exposed to the outside; The terminal has a first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, and the first recesses and the first protrusions are alternately arranged.

2. The semiconductor memory device according to claim 1, wherein The semiconductor storage device can be detachably mounted on a socket-type connector provided on a second substrate of a host device.

3. The semiconductor memory device according to claim 2, wherein The semiconductor storage device can be detachably mounted on the connector in a state in which contact pins of the connector are in contact with the terminals.

4. The semiconductor memory device according to claim 3, wherein The contact pin has a bent portion provided at a distal end of the contact pin and bent toward a side opposite to the terminal; and The terminal includes: a first region, at least a portion of which overlaps with the bent portion when viewed from the thickness direction of the first substrate; and a second region offset from the first region; The first non-planar portion is provided at least in the second region.

5. The semiconductor memory device according to claim 4, wherein The first region has a planar portion that is flatter than the first non-planar portion. The semiconductor memory device according to claim 5 , wherein When the extending direction of the contact pin is defined as a first direction and the direction intersecting the first direction is defined as a second direction, The width of the planar portion in the second direction is larger than the width of the first convex portion in the second direction.

7. The semiconductor memory device according to claim 6, wherein A width of the planar portion in the second direction is greater than a width of the bent portion of the contact pin in the second direction.

8. The semiconductor memory device according to claim 4, wherein When the extending direction of the contact pin is defined as a first direction and the direction intersecting the first direction is defined as a second direction, The first region has a second non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the second recesses and the second protrusions are alternately arranged, and When viewed in the thickness direction of the first substrate, the width of the second protrusion in the second direction is larger than the width of the second protrusion in the first direction.

9. The semiconductor memory device according to claim 8, wherein The width of the second convex portion in the second direction is larger than the width of the first convex portion in the second direction.

10. The semiconductor memory device according to claim 8 or claim 9, wherein The width of the second protrusion in the second direction is larger than the width of the bent portion of the contact pin in the second direction.

11. The semiconductor memory device according to claim 8 or claim 9, wherein An edge of at least one of the second protrusions in the first direction has an inclined portion that is inclined with respect to the first surface.

12. The semiconductor memory device according to claim 4, wherein When the extending direction of the contact pin is defined as a first direction and the direction intersecting the first direction is defined as a second direction, The first non-planar portion is provided in the first region and the second region, and An edge in the first direction of at least one first protrusion provided in the first region has an inclined portion inclined with respect to the first surface.

13. The semiconductor memory device according to claim 4, wherein When the extending direction of the contact pin is defined as a first direction and the direction intersecting the first direction is defined as a second direction, The first region has a second non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the second recesses and the second protrusions are alternately arranged, and The width of the second convex portion in the first direction is greater than the width of the second convex portion in the second direction.

14. The semiconductor memory device according to claim 13, wherein The width of the second protrusion in the first direction is equal to or greater than half the width of the terminal in the first direction.

15. The semiconductor memory device according to claim 13 or claim 14, wherein The center of the second protrusion in the first direction is located at a position offset to one side in the first direction with respect to the center of the terminal in the first direction.

16. The semiconductor memory device according to claim 4, wherein The first region has: a supporting portion in contact with the bent portion of the contact pin; and The receiving portion includes a curved surface portion that is curved in the same direction as the curved direction of the curved portion.

17. The semiconductor memory device according to claim 1 or claim 2, wherein The first substrate comprises: a surface portion forming the second surface and including a conductive pattern including the terminal and an insulating layer covering a portion of the conductive pattern; and The surface layer portion has a third non-planar portion in a region away from the terminal, having at least one of a plurality of recesses and a plurality of protrusions, and the third recesses and the third protrusions are alternately arranged.

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