Power module and power conversion equipment

Abstract

The embodiment of the invention provides a power module and power conversion equipment, relates to the technical field of electronic equipment, and is used for simplifying the structure of the power conversion equipment. The power module comprises a frame substrate, a first power chip, a second power chip, a first wiring layer and a second wiring layer. The first power chip and the second power chip are embedded in the frame base material, and each of the first power chip and the second power chip comprises a first electrode, a second electrode and a third electrode. The first wiring layer is arranged on the first surface, and the second wiring layer is arranged on the second surface. Wherein a first electrode of the first power chip and a second electrode of the second power chip both face the first wiring layer, and the first electrode of the first power chip and the second electrode of the second power chip are connected through the first wiring layer; the second electrode of the first power chip and the first electrode of the second power chip face and are connected to the second wiring layer. The power module is used for the power conversion equipment.

Description

Technical Field

[0001] The present application relates to the technical field of electronic equipment, and in particular to a power module and a power conversion device. Background Art

[0002] There are voltage swing points in existing power conversion equipment. The voltage at the voltage swing points will change, thus generating electromagnetic interference. In the existing technology, in order to shield the electromagnetic interference generated by the voltage swing points, an additional electromagnetic shielding device needs to be provided, which will make the structure of the power conversion equipment more complicated. Summary of the Invention

[0003] The purpose of the embodiments of the present application is to provide a power module and a power conversion device for simplifying the structure of the power conversion device.

[0004] To achieve the above objectives, the embodiments of the present application provide the following technical solutions:

[0005] On the one hand, a power module is provided. The power module includes: a frame substrate, a first power chip, a second power chip, a first routing layer, and a second routing layer. The frame substrate includes a first surface and a second surface arranged opposite to each other. The first power chip and the second power chip are both embedded in the frame substrate, and the first power chip and the second power chip are spaced apart along a first direction, wherein the first direction intersects with the thickness direction of the frame substrate, and the first power chip and the second power chip both include a first electrode, a second electrode, and a third electrode, and the second electrode and the third electrode are arranged on the same side of the first electrode and are both arranged opposite to the first electrode. The first routing layer is arranged on the first surface, and the second routing layer is arranged on the second surface. The first electrode of the first power chip and the second electrode of the second power chip are both facing the first routing layer, and the first electrode of the first power chip and the second electrode of the second power chip are connected through the first routing layer; the second electrode of the first power chip and the first electrode of the second power chip are facing and connected to the second routing layer.

[0006] In the power module provided in the embodiment of the present application, the frame substrate can support the first power chip and the second power chip. The arrangement direction of the first power chip and the second power chip can intersect with the thickness direction of the frame substrate. Therefore, the first power chip and the second power chip are not stacked along the thickness direction of the frame substrate. The first electrode of the first power chip and the second electrode of the second power chip are connected via a first wiring layer. When the power module is operating, the voltage at the connection between the first electrode of the first power chip and the second electrode of the second power chip will change, that is, a voltage swing point will be generated at the connection. The connection between the first electrode of the first power chip and the second electrode of the second power chip is located in the first wiring layer. Therefore, the voltage swing point is generated in the first wiring layer. The voltage swing point can generate electromagnetic interference to other devices. The second wiring layer can serve as an electromagnetic shielding layer to shield the electromagnetic interference generated by the voltage swing point between the first electrode of the first power chip and the second electrode of the second power chip to other devices. Therefore, in the embodiment of the present application, it is not necessary to provide an additional electromagnetic shielding layer for the voltage swing point between the first electrode of the first power chip and the second electrode of the second power chip, thereby simplifying the structure of the power module. When the power module is applied to a power conversion device, the structure of the power conversion device can be simplified.

[0007] In some embodiments, the power module further includes a heat dissipation component including an insulating thermal conductive layer and a heat dissipation layer, wherein the insulating thermal conductive layer covers a surface of the second wiring layer facing away from the first power chip, and the heat dissipation layer is located on a side of the insulating thermal conductive layer facing away from the second wiring layer.

[0008] Among them, the first power chip and the second power chip will generate heat, and the heat generated by the first power chip and the second power chip can be transmitted to the second wiring layer and transmitted to the heat dissipation layer through the insulating heat conductive layer. Therefore, the heat can be dissipated through the heat dissipation layer, thereby dissipating the heat of the first power chip and the second power chip.

[0009] In some embodiments, the heat dissipation assembly further includes a plurality of heat dissipation fins connected to a surface of the heat dissipation layer facing away from the insulating heat conductive layer.

[0010] Among them, by arranging a plurality of heat dissipation fins on the surface of the heat dissipation layer away from the insulating heat-conducting layer, the heat dissipation area of ​​the heat dissipation assembly can be increased, thereby improving the heat dissipation efficiency of the heat dissipation assembly.

[0011] In some embodiments, the power module further includes: a first conductive layer, the first conductive layer is arranged on the first electrode of the first power chip, and the first routing layer is connected to the first electrode of the first power chip through the first conductive layer; and / or, the power module further includes: a second conductive layer, the second conductive layer is arranged on the first electrode of the second power chip, and the second routing layer is connected to the first electrode of the second power chip through the second conductive layer.

[0012] The first conductive layer can increase the heat dissipation area of ​​the first power chip, thereby improving the heat dissipation effect of the first power chip. The second conductive layer can increase the heat dissipation area of ​​the second power chip, thereby improving the heat dissipation effect of the second power chip.

[0013] In some embodiments, when the power module further includes a first conductive layer, the power module further includes a first connection layer, and the first connection layer is disposed between the first conductive layer and the first electrode of the first power chip.

[0014] The first connection layer may be conductive, and the first conductive layer is connected to the first electrode of the first power chip via the first connection layer. For example, the first connection layer may include a sintering layer or a soldering layer.

[0015] In some embodiments, when the power module further includes a second conductive layer, the power module further includes a second connection layer, and the second connection layer is disposed between the first conductive layer and the first electrode of the second power chip.

[0016] The second connection layer may be conductive, and the first conductive layer is connected to the first electrode of the second power chip via the second connection layer. For example, the second connection layer may include a sintering layer or a soldering layer.

[0017] In some embodiments, the power module further includes: a plurality of first connection portions, the plurality of first connection portions are arranged between the first routing layer and the first surface, the first routing layer is connected to the first electrode of the first power chip through a portion of the first connection portion, and the first routing layer is connected to the second electrode of the second power chip through another portion of the first connection portion; and / or, the power module further includes: a plurality of second connection portions, the plurality of second connection portions are arranged between the second routing layer and the second surface, the second routing layer is connected to the second electrode of the first power chip through a portion of the second connection portion, and the second routing layer is connected to the first electrode of the second power chip through another portion of the second connection portion.

[0018] Among them, since the lengths of the first connecting part and the second connecting part in the thickness direction of the frame substrate are relatively small, the parasitic inductance and parasitic resistance generated by the first connecting part and the second connecting part themselves are relatively small, thereby reducing the parasitic inductance and parasitic resistance of the power module, thereby improving the system efficiency of the power module and reducing electrical stress.

[0019] In some embodiments, the power module further includes a conductive block, which is embedded in the frame substrate, and the first wiring layer and the second wiring layer are connected via the conductive block.

[0020] By connecting the first and second routing layers via the conductive blocks, the resistance between the first and second routing layers can be reduced, thereby reducing the resistance of the power module, improving the efficiency of the power module, and reducing electrical stress. Furthermore, the conductive blocks can support the frame substrate and the power module, thereby increasing the strength of the power module.

[0021] In some embodiments, the power module further comprises an external connection layer, which is located on a side of the first wiring layer facing away from the frame substrate and is connected to the first wiring layer.

[0022] The external connection layer is provided so that the first power chip and the second power chip can be connected to other electronic devices through the first wiring layer and the external connection layer.

[0023] In some embodiments, the power module further comprises a protective layer located on a side of the external connection layer facing away from the frame substrate, the protective layer comprising a plurality of openings, and partial areas of the external connection layer being exposed to the openings.

[0024] The portion of the protective layer exposed to the opening can be used as a pad for connecting to other electronic devices. The protective layer can be used to insulate the area of ​​the external connection layer that is not connected to other electronic devices, thereby improving the phenomenon of short circuits.

[0025] In some embodiments, the first power chip and the second power chip include field effect transistors or insulated gate bipolar transistors.

[0026] Among them, field-effect transistors have the advantages of high input impedance, low noise, large dynamic range, low power consumption, and easy integration, while insulated gate bipolar transistors have the advantages of simple driving, easy protection, and high switching frequency.

[0027] In some embodiments, the first electrode is a drain electrode, the second electrode is a source electrode, and the third electrode is a gate electrode.

[0028] Among them, the drain of the first power chip can be connected to the source of the second power chip through the first routing layer. Therefore, the voltage dynamic point between the drain of the first power chip and the source of the second power chip can be located in the first routing layer, and the second routing layer can electromagnetically shield the voltage dynamic point.

[0029] On the other hand, a power conversion device is provided. The power conversion device includes: a power module and a circuit board. The power module includes: a frame substrate, a first power chip, a second power chip, a first routing layer and a second routing layer. The frame substrate includes a first surface and a second surface arranged opposite to each other; the first power chip and the second power chip are both embedded in the frame substrate, and the first power chip and the second power chip are spaced apart along the first direction, wherein the first direction intersects with the thickness direction of the frame substrate, the first power chip and the second power chip both include a first electrode, a second electrode and a third electrode, the second electrode and the third electrode are arranged on the same side of the first electrode, and are both arranged opposite to the first electrode; the first routing layer is arranged on the first surface, and the second routing layer is arranged on the second surface; the first electrode of the first power chip and the second electrode of the second power chip are both facing the first Routing layer; the second electrode of the first power chip and the first electrode of the second power chip are oriented toward and connected to the second routing layer; wherein the first routing layer includes a first routing, a second routing, and a fourth routing, and the second routing layer includes a fifth routing and a seventh routing; the first routing is connected to the first electrode of the first power chip and the second electrode of the second power chip, and the first routing is connected to the circuit board; the second routing is connected to the fifth routing, the fifth routing is connected to the second electrode of the first power chip, and the second routing is connected to the circuit board; the fourth routing is connected to the seventh routing, the seventh routing is connected to the second electrode of the second power chip, and the fourth routing is connected to the circuit board.

[0030] Among them, the power conversion device provided in the embodiment of the present application includes the same structure as the power module provided in some of the above embodiments. Therefore, the power conversion device provided in the embodiment of the present application includes the same beneficial effects as the power module provided in some of the above embodiments, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] To more clearly illustrate the technical solutions of this application, the following briefly introduces the drawings required for use in some embodiments of this application. Obviously, the drawings described below are only drawings of some embodiments of this application, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of this application.

[0032] Figure 1 A structural diagram of a photovoltaic system provided in some embodiments of the present application;

[0033] Figure 2 for Figure 1 A schematic diagram of the structure of the power conversion device in FIG.

[0034] Figure 3 for Figure 1Another structural schematic diagram of the power conversion device in;

[0035] Figure 4 A structural diagram of the power module provided in an embodiment of the present application;

[0036] Figure 5 Another structural diagram of the power module provided in an embodiment of the present application;

[0037] Figure 6 Another structural diagram of the power module provided in an embodiment of the present application;

[0038] Figure 7 is a structural diagram of a power conversion device according to some embodiments;

[0039] Figure 8 This is a partial circuit diagram of a power conversion device. DETAILED DESCRIPTION

[0040] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0041] Throughout the description of the specification, the terms "some embodiments," "example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0042] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0043] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0044] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0045] As used herein, “approximately” includes the stated value and an average value that is within an acceptable range of deviation from the particular value, where the acceptable range of deviation is determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0046] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0047] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0048] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0049] An embodiment of the present application provides an electronic device. The electronic device may be, for example, a power conversion device, a radio frequency device, a power amplifier device, a power amplifier, an AI (artificial intelligence) device, a CPU (central processing unit), a GPU (graphics processing unit), an on-board optical bus (OBC), a site blade power supply, or the like.

[0050] The following describes the electronic device provided in the embodiments of the present application by taking a power conversion device as an example.

[0051] Power conversion equipment can be used in photovoltaic systems. Figure 1 This is a structural diagram of a photovoltaic system 1000 provided in some embodiments of the present application.

[0052] See also Figure 1 The photovoltaic system 1000 may include a solar cell group 110 and a power conversion device 200. The solar cell group 110 may include a plurality of solar panels, which may be connected in series or in parallel. The solar panels may convert solar energy into direct current (DC) and output the DC power.

[0053] The power conversion device 200 can be connected to the solar cell array 110. Therefore, the DC power output by the solar cell array 110 can be output to the power conversion device 200. The power conversion device 200 can output the DC power to the inverter 120. The inverter 120 can convert the DC power into AC power and output the AC power.

[0054] In the photovoltaic system 1000, there can be multiple solar cell arrays 110, and similarly, there can be multiple power conversion devices 200. One solar cell array 110 can be connected to one power conversion device 200. Multiple power conversion devices 200 can be connected to the inverter 120, and the multiple power conversion devices 200 can output DC power to the inverter 120.

[0055] For example, one end of the DC power output of the plurality of power conversion devices 200 may be connected in sequence, and one end of the DC power output of the power conversion devices 200 at the head end and the tail end may also be connected to the inverter 120 .

[0056] For example, in the photovoltaic system 1000 , the power conversion device 200 may be a photovoltaic optimizer.

[0057] Figure 2 for Figure 1 Schematic diagram of the structure of the power conversion device 200.

[0058] See also Figure 2 In some embodiments, the power conversion device 200 may include a housing 201 , an electronic component 202 , a support frame 203 , a sealing ring 204 and a heat sink 205 .

[0059] The housing 201 can protect the electronic component 202 .

[0060] The electronic component 202 may include a first circuit board 2021 and a power chip 2022 disposed on the first circuit board 2021. The housing 201 is connected to the first circuit board 2021 and may be disposed on a side of the first circuit board 2021 where the power chip 2022 is disposed. The housing 201 may protect the electronic component 202.

[0061] The support frame 203 is connected to the first circuit board 2021 and is located on a side of the first circuit board 2021 away from the power chip 2022 , wherein a notch is provided on the support frame 203 , so that the support frame 203 can support the first circuit board 2021 .

[0062] The sealing ring 204 may be located on a side of the support frame 203 facing away from the electronic component 202 .

[0063] The heat sink 205 may be located on a side of the support frame 203 facing away from the housing 201 , wherein the heat sink 205 may dissipate heat for the electronic component 202 .

[0064] In addition, the power conversion device 200 may further include a heat conduction component. Figure 2The heat conducting component is not shown in the figure, wherein the heat conducting component is connected between the first circuit board 2021 and the heat sink 205. The heat conducting component can transfer the heat on the first circuit board 2021 to the heat sink 205, thereby facilitating the heat sink 205 to dissipate heat from the first circuit board 2021.

[0065] Figure 3 for Figure 1 Another structural schematic diagram of the power conversion device 200 in FIG.

[0066] See also Figure 3 The power conversion device 200 may further include: a potting layer 206 , a first adhesive layer 2071 , an electromagnetic shielding layer 208 , a second adhesive layer 2072 , an insulating layer 209 and a third adhesive layer 2073 .

[0067] Among them, the encapsulation layer 206 covers the side of the first circuit board 2021 where the power chip 2022 is provided, and covers the power chip 2022. By providing the encapsulation layer 206, the power chip 2022 can be protected from environmental influences, the mechanical strength of the electronic component 202 can be improved, and its electrical insulation can be improved.

[0068] For example, the encapsulation layer 206 may be formed of encapsulation glue.

[0069] The electromagnetic shielding layer 208 is located on a side of the first circuit board 2021 away from the power chip 2022 , and a first adhesive layer 2071 is provided between the electromagnetic shielding layer 208 and the first circuit board 2021 . The electromagnetic shielding layer 208 can be connected to the first circuit board 2021 through the first adhesive layer 2071 .

[0070] For example, the electromagnetic shielding layer 208 can be made of a metal material, so that the electromagnetic shielding layer 208 can provide electromagnetic shielding for the electronic component 202, thereby reducing the interference of the external electromagnetic field on the electronic component 202 and simultaneously reducing the electromagnetic interference generated by the electronic component 202 on other electronic devices.

[0071] For example, the electromagnetic shielding layer 208 may include a temperature-uniform aluminum substrate.

[0072] For example, the first adhesive layer 2071 may include thermally conductive gel.

[0073] The insulating layer 209 is located on a side of the electromagnetic shielding layer 208 away from the first circuit board 2021 , and a second adhesive layer 2072 is provided between the insulating layer 209 and the electromagnetic shielding layer 208 . The second adhesive layer 2072 can connect the insulating layer 209 and the electromagnetic shielding layer 208 .

[0074] The insulating layer 209 is provided to insulate the electronic component 202 , thereby reducing the risk of short circuits in the electronic component 202 .

[0075] For example, the insulating layer 209 may include a ceramic substrate.

[0076] For example, the second adhesive layer 2072 may include thermally conductive gel.

[0077] The heat sink 205 may be located on a side of the insulating layer 209 away from the electromagnetic shielding layer 208 , and a third adhesive layer 2073 is provided between the heat sink 205 and the insulating layer 209 , wherein the third adhesive layer 2073 may connect the heat sink 205 and the insulating layer 209 .

[0078] For example, the third adhesive layer 2073 may include a thermal curing adhesive.

[0079] The heat generated by the electronic component 202 may be transferred to the heat sink 205 through the first adhesive layer 2071 , the electromagnetic shielding layer 208 , the second adhesive layer 2072 , the insulating layer 209 and the third adhesive layer 2073 in sequence.

[0080] In this embodiment, a separate electromagnetic shielding layer 208 needs to be provided to provide electromagnetic shielding for the electronic component 202 , which results in a relatively complex structure of the power conversion device 200 .

[0081] Based on this, an embodiment of the present application provides a power module, which can be applied to electronic devices such as power conversion equipment 200, radio frequency devices, power amplifier devices, power amplifiers, AI (artificial intelligence) devices, CPUs (central processing units), and GPUs (graphic processing units).

[0082] Figure 4 This is a structural diagram of the power module provided in an embodiment of the present application.

[0083] See also Figure 4The power module 300 includes: a frame substrate 310, a first power chip 320, a second power chip 330, a first routing layer 340, and a second routing layer 350. The frame substrate 310 includes a first surface 311 and a second surface 312 disposed opposite to each other. The first power chip 320 and the second power chip 330 are both embedded in the frame substrate 310, and the first power chip 320 and the second power chip 330 are spaced apart along a first direction F1, wherein the first direction F1 intersects with the thickness direction F2 of the frame substrate 310. The first power chip 320 and the second power chip 330 both include a first electrode A1, a second electrode A2, and a third electrode A3. The second electrode A2 and the third electrode A3 are disposed on the same side of the first electrode A1 and are both disposed opposite to the first electrode A1. The first routing layer 340 is disposed on the first surface 311, and the second routing layer 350 is disposed on the second surface 312. Among them, the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 are both facing the first routing layer 340, and the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 are connected through the first routing layer 340; the second electrode A2 of the first power chip 320 and the first electrode A1 of the second power chip 330 are facing and connected to the second routing layer 350.

[0084] The frame substrate 310 may include a first insulating material. For example, the first insulating material may include polypropylene (PP), which has high impact resistance, strong mechanical properties, and resistance to corrosion by various organic solvents and acids and alkalis.

[0085] The frame substrate 310 can support the first power chip 320 and the second power chip 330 .

[0086] For example, the first direction F1 may be perpendicular to the thickness direction F2 . For example, the first direction F1 may be parallel to the first surface 311 . That is, the first power chip 320 and the second power chip 330 may be sequentially arranged along a direction parallel to the first surface 311 .

[0087] In some examples, the first electrode A1 of the first power chip 320 is exposed to the first surface 311 of the frame substrate 310 , and the second electrode A2 and the third electrode A3 of the first power chip 320 may be exposed to the second surface 312 of the frame substrate 310 .

[0088] The second electrode A2 and the third electrode A3 of the second power chip 330 are exposed to the first surface 311 of the frame substrate 310 , and the first electrode A1 of the second power chip 330 may be exposed to the second surface 312 of the frame substrate 310 .

[0089] In some examples, the first routing layer 340 can directly cover the first surface 311. In this case, the first routing layer 340 can be in direct contact with the first surface 311, and the first routing layer 340 can directly cover the first electrode A1 of the first power chip 320, the second electrode A2 of the second power chip 330, and the third electrode A3 of the second power chip 330, so that the first routing layer 340 can be electrically connected to the first electrode A1 of the first power chip 320, the second electrode A2 of the second power chip 330, and the third electrode A3 of the second power chip 330.

[0090] In other examples, a first dielectric layer may be provided between the first routing layer 340 and the first surface 311. In this case, the first routing layer 340 may cover the surface of the first dielectric layer facing away from the first surface 311, and the first routing layer 340 is connected to the first electrode A1 of the first power chip 320, the second electrode A2 of the second power chip 330, and the third electrode A3 of the second power chip 330 through a first connecting portion 381 embedded in the first dielectric layer 383.

[0091] In some examples, the second routing layer 350 can directly cover the second surface 312. In this case, the second routing layer 350 can be in direct contact with the second surface 312, and the second routing layer 350 can directly cover the second electrode A2 of the first power chip 320, the third electrode A3 of the first power chip 320, and the first pole A1 of the second power chip 330, so that the second routing layer 350 is electrically connected to the second electrode A2 of the first power chip 320, the third electrode A3 of the first power chip 320, and the first pole A1 of the second power chip 330.

[0092] In other examples, a second dielectric layer may be provided between the second routing layer 350 and the second surface 312. In this case, the second routing layer 350 may cover the surface of the second dielectric layer facing away from the second surface 312, and the second routing layer 350 is connected to the first electrode A1 of the first power chip 320, the second electrode A2 of the second power chip 330, and the third electrode A3 of the second power chip 330 through a second connecting portion embedded in the second dielectric layer.

[0093] The first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 are connected via the first routing layer 340. When the power module 300 is operating, the voltage at the connection between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 will change, generating a voltage swing point at the connection. The connection between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 is located on the first routing layer 340, so the voltage swing point is generated on the first routing layer 340. This voltage swing point can generate electromagnetic interference to other devices. The second routing layer 350 can serve as an electromagnetic shielding layer, thereby shielding the electromagnetic interference generated by the voltage swing point between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 from other devices. Therefore, in this embodiment of the present application, there is no need to provide an additional electromagnetic shielding layer for the voltage swing point between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330, thereby simplifying the structure of the power module 300. When the power module 300 is applied to a power conversion device, the structure of the power conversion device can be simplified.

[0094] The second electrode A2 of the first power chip 320 and the first electrode A1 of the second power chip 330 are oriented toward and connected to the second routing layer 350. The second routing layer 350 can be connected to the first routing layer 340. At this time, the second electrode A2 of the first power chip 320 can be connected to part of the routing in the first routing layer 340 through the second routing layer 350, and part of the routing in the first routing layer 340 can be connected to the first electrode A1 of the second power chip 330 through the second routing layer 350. In this way, the voltage turning point generated between the second electrode A2 of the first power chip 320 and the first electrode A1 of the second power chip 330 is located in the first routing layer 340.

[0095] In the embodiment of the present application, the voltage swing point between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 is located on the first routing layer 340. Therefore, the second routing layer 350 can serve as an electromagnetic shielding layer to shield the electromagnetic interference generated by the voltage swing point between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330. Therefore, in the embodiment of the present application, it is not necessary to provide an additional electromagnetic shielding layer for the voltage swing point between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330, thereby simplifying the structure of the power module 300. When the power module 300 is used in a power conversion device, the structure of the power conversion device can be simplified.

[0096] For example, the first power chip 320 and the second power chip 330 may each include a field effect transistor or an insulated gate bipolar transistor (IGBT). A field effect transistor may also be referred to as a metal-oxide semiconductor (MOS). The first electrode A1 may be a drain (D), the second electrode A2 may be a source (S), and the third electrode A3 may be a gate (G).

[0097] Among them, field-effect transistors have the advantages of high input impedance, low noise, large dynamic range, low power consumption, and easy integration, while insulated gate bipolar transistors have the advantages of simple driving, easy protection, and high switching frequency.

[0098] Among them, the drain of the first power chip 320 can be connected to the source of the second power chip 330 through the first routing layer 340. Therefore, the voltage dynamic point between the drain of the first power chip 320 and the source of the second power chip 330 can be located in the first routing layer 340, and the second routing layer 350 can electromagnetically shield the voltage dynamic point.

[0099] In some embodiments, the power module 300 further includes a heat dissipation assembly 360. The heat dissipation assembly 360 includes an insulating thermally conductive layer 361 and a heat dissipation layer 362. The insulating thermally conductive layer 361 covers the surface of the second wiring layer 350 facing away from the first power chip 320. The heat dissipation layer 362 is located on the side of the insulating thermally conductive layer 361 facing away from the second wiring layer 350.

[0100] Among them, the second routing layer 350 can be embedded in the insulating heat-conducting layer 361. When the power module 300 is working, the first power chip 320 and the second power chip 330 will generate heat, and the heat generated by the first power chip 320 and the second power chip 330 can be transferred to the second routing layer 350 and transferred to the heat dissipation layer 362 through the insulating heat-conducting layer 361. Therefore, the heat can be dissipated through the heat dissipation layer 362, thereby dissipating the heat of the first power chip 320 and the second power chip 330.

[0101] The insulating heat-conductive layer 361 may have a heat-uniformity property, thereby improving the heat dissipation uniformity of the heat dissipation component 360 , thereby improving the phenomenon of local overheating of the power module 300 .

[0102] The insulating heat-conducting layer 361 may include an insulating heat-conducting material, wherein the insulating heat-conducting material may have a certain viscosity, so that the heat dissipation layer 362 can be fixed to the second wiring layer 350 through the insulating heat-conducting layer 361 .

[0103] Among them, the insulating thermal conductive layer 361 has insulating properties, so the insulating thermal conductive layer 361 can insulate the second wiring layer 350, avoid conductive connection between the second wiring layer 350 and the heat dissipation layer 362, reduce short circuit phenomena, and thus ensure the power safety of the power module 300.

[0104] In some examples, the heat dissipation layer 362 may be made of a metal material to ensure the heat dissipation effect of the heat dissipation layer 362 .

[0105] In addition, in the embodiment of the present application, the heat generated by the first power chip 320 and the second power chip 330 can be transferred to the heat dissipation layer 362 through the second routing layer 350 and the insulating thermal conductive layer 361, thereby simplifying the system structure, shortening the heat transfer link, and improving the heat dissipation efficiency.

[0106] Figure 5 Another structural diagram of the power module provided in an embodiment of the present application.

[0107] See also Figure 5 In some embodiments, the heat dissipation assembly 360 may further include a plurality of heat dissipation fins 363 , and the plurality of heat dissipation fins 363 are connected to a surface of the heat dissipation layer 362 facing away from the insulating heat conductive layer 361 .

[0108] By arranging a plurality of heat dissipation fins 363 on the surface of the heat dissipation layer 362 away from the insulating heat conductive layer 361 , the heat dissipation area of ​​the heat dissipation assembly 360 can be increased, thereby improving the heat dissipation efficiency of the heat dissipation assembly 360 .

[0109] For example, the heat dissipation fins 363 and the heat dissipation layer 362 can be made of the same material.

[0110] In other examples, the heat dissipation assembly 360 may further include a heat sink, which may include a heat conductive layer and a plurality of heat sink fins. The heat conductive layer may be connected to a side of the heat dissipation layer 362 facing away from the frame substrate 310, and the plurality of heat sink fins may be disposed on a surface of the heat conductive layer facing away from the heat dissipation layer 362. The heat conductive layer and the heat dissipation layer 362 may be fixedly connected by screws, or may be connected by sintering, welding, or other processes. The heat sink may be made of a metal material.

[0111] Figure 6 This is another structural diagram of the power module provided in an embodiment of the present application.

[0112] See also Figure 6 In some embodiments, the power module 300 further includes: a first conductive layer 371 , which is disposed on the first electrode A1 of the first power chip 320 , and the first routing layer 340 is connected to the first electrode A1 of the first power chip 320 through the first conductive layer 371 .

[0113] For example, the first conductive layer 371 may include a metal material. For example, the first conductive layer 371 may be a copper layer.

[0114] For example, the first routing layer 340 may be in direct contact with and connected to the first conductive layer 371 , or the first routing layer 340 may be connected to the first conductive layer 371 through the first connecting portion 381 .

[0115] The heat generated by the first power chip 320 can be transferred to the first conductive layer 371 . Therefore, the heat dissipation area can be increased through the first conductive layer 371 , thereby improving the heat dissipation effect of the first power chip 320 .

[0116] In some examples, when the power module 300 includes: a first conductive layer 371, the power module 300 may also include a first connection layer 373, and the first connection layer 373 is arranged between the first conductive layer 371 and the first electrode A1 of the first power chip 320. The first connection layer 373 may be conductive, and the first conductive layer 371 is connected to the first electrode A1 of the first power chip 320 through the first connection layer 373.

[0117] For example, the first connection layer 373 may include a sintered layer or a solder layer.

[0118] See also Figure 6 In some embodiments, the power module 300 may further include: a second conductive layer 372 , the second conductive layer 372 is disposed on the first electrode A1 of the second power chip 330 , and the second routing layer 350 is connected to the first electrode A1 of the second power chip 330 through the second conductive layer 372 .

[0119] For example, the second conductive layer 372 may include a metal material. For example, the second conductive layer 372 may be a copper layer.

[0120] For example, the second routing layer 350 may be in direct contact with and connected to the second conductive layer 372 , or the second routing layer 350 may be connected to the second conductive layer 372 via a second connection portion.

[0121] The heat generated by the second power chip 330 can be transferred to the second conductive layer 372 . Therefore, the heat dissipation area can be increased by providing the second conductive layer 372 , thereby improving the heat dissipation effect of the second power chip 330 .

[0122] In some examples, when the power module 300 includes: a second conductive layer 372, the power module 300 may also include a second connection layer 374, and the second connection layer 374 is arranged between the first conductive layer 371 and the first electrode A1 of the second power chip 330. The second connection layer 374 may be conductive, and the first conductive layer 371 is connected to the first electrode A1 of the second power chip 330 through the second connection layer 374.

[0123] For example, the second connection layer 374 may include a sintered layer or a solder layer.

[0124] The power module 300 may include a first conductive layer 371 and / or a second conductive layer 372. For example, the power module 300 may include a first conductive layer 371; for example, the power module 300 may include a second conductive layer 372; or for another example, the power module 300 may include a first conductive layer 371 and a second conductive layer 372.

[0125] See also Figure 6 In some embodiments, the power module 300 may further include: a plurality of first connection portions 381, the plurality of first connection portions 381 being arranged between the first routing layer 340 and the first surface 311, the first routing layer 340 being connected to the first electrode A1 of the first power chip 320 through a portion of the first connection portion 381, and the first routing layer 340 being connected to the second electrode A2 of the second power chip 330 through another portion of the first connection portion 381.

[0126] In some examples, the power module 300 may further include a first dielectric layer 383, wherein the first dielectric layer 383 may cover the first surface 311 of the frame substrate 310, and the first routing layer 340 may cover a side of the first dielectric layer 383 facing away from the first surface 311. A plurality of first connecting portions 381 may be embedded in the first dielectric layer 383 and penetrate the first dielectric layer 383 along the thickness direction of the frame substrate 310.

[0127] Among them, when making the first connecting part 381, a hole can be first punched in the first dielectric layer 383, and then the first connecting part 381 can be made in the hole. Therefore, the height of the first connecting part 381 in the thickness direction of the frame substrate 310 is roughly equal to the thickness of the first dielectric layer 383. Furthermore, the length of the first connecting part 381 in the thickness direction of the frame substrate 310 is relatively small, so the parasitic inductance and parasitic resistance generated by the first connecting part 381 itself are relatively small, thereby reducing the parasitic inductance and parasitic resistance of the power module 300, thereby improving the system efficiency of the power module 300 and reducing electrical stress.

[0128] In some examples, the first routing layer 340 may be further connected to the third electrode A3 of the second power chip 330 through another portion of the first connection portion 381 .

[0129] The part of the first connection portion 381 , the other part of the first connection portion 381 and the further part of the first connection portion 381 may each include one or more first connection portions 381 .

[0130] The first connection parts 381 included in the part of the first connection parts 381 , the other part of the first connection parts 381 , and the further part of the first connection parts 381 are different.

[0131] When the power module 300 also includes a first conductive layer 371, the first routing layer 340 is connected to the first conductive layer 371 through a portion of the first connecting portion 381, and the first conductive layer 371 is connected to the first electrode A1 of the first power chip 320, so that the first routing layer 340 can be conductively connected to the first electrode A1 of the first power chip 320.

[0132] In some embodiments, the power module 300 may also include: multiple second connection parts 382, ​​multiple second connection parts 382 are arranged between the second routing layer 350 and the second surface 312, the second routing layer 350 is connected to the second electrode A2 of the first power chip 320 through a part of the second connection part 382, ​​and the second routing layer 350 is connected to the first electrode A1 of the second power chip 330 through another part of the second connection part 382.

[0133] In some examples, the power module 300 may further include a second dielectric layer 384, wherein the second dielectric layer 384 may cover the second surface 312 of the frame substrate 310, and the second routing layer 350 may cover a side of the second dielectric layer 384 facing away from the second surface 312. A plurality of second connecting portions 382 may be embedded in the second dielectric layer 384 and penetrate the second dielectric layer 384 along the thickness direction of the frame substrate 310.

[0134] When making the second connecting portion 382, ​​a hole can be first punched in the second dielectric layer 384, and then the second connecting portion 382 can be made in the hole. Therefore, the height of the second connecting portion 382 in the thickness direction of the frame substrate 310 is approximately equal to the thickness of the second dielectric layer 384. Furthermore, the length of the second connecting portion 382 in the thickness direction of the frame substrate 310 is relatively small, so that the parasitic inductance and parasitic resistance generated by the second connecting portion 382 itself are relatively small, thereby reducing the parasitic inductance and parasitic resistance of the power module 300, thereby improving the system efficiency of the power module 300 and reducing electrical stress.

[0135] In some examples, the second routing layer 350 may be further connected to the third electrode A3 of the first power chip 320 through another portion of the second connection portion 382 .

[0136] The part of the second connection portion 382 , the other part of the second connection portion 382 and the further part of the second connection portion 382 may each include one or more first connection portions 381 .

[0137] The second connection parts 382 included in the part of the second connection parts 382 , the other part of the second connection parts 382 , and the still further part of the second connection parts 382 are different.

[0138] When the power module 300 also includes a second conductive layer 372, the second routing layer 350 is connected to the second conductive layer 372 through a portion of the second connecting portion 382, ​​and the second conductive layer 372 is connected to the first electrode A1 of the second power chip 330, so that the second routing layer 350 can be conductively connected to the first electrode A1 of the second power chip 330.

[0139] The power module 300 may include a first connection portion 381 and / or a second connection portion 382. For example, the power module 300 may include a first connection portion 381; for another example, the power module 300 may include a second connection portion 382; for another example, the power module 300 may include both a first connection portion 381 and a second connection portion 382. Accordingly, when the power module 300 includes the first connection portion 381, the power module 300 may also include a first dielectric layer 383; and when the power module 300 includes the second connection portion 382, ​​the power module 300 may also include a second dielectric layer 384.

[0140] See also Figures 4 to 6 In some embodiments, the power module 300 may further include a conductive block 390 , which is embedded in the frame substrate 310 , and the first wiring layer 340 and the second wiring layer 350 are connected via the conductive block 390 .

[0141] The two surfaces of the conductive block 390 that are disposed opposite to each other in the thickness direction may be exposed to the first surface 311 and the second surface 312 of the frame substrate 310 , respectively.

[0142] See also Figure 4 and Figure 5 For example, the height of the conductive block 390 in the thickness direction of the frame substrate 310 may be substantially the same as the height of the first power chip 320 in the thickness direction.

[0143] See also Figure 6 For example, when the power module 300 also includes a first conductive layer 371, the height of the conductive block 390 in the thickness direction of the frame substrate 310 can be approximately equal to the sum of the height of the first power chip 320 in the thickness direction of the frame substrate 310 and the thickness of the first conductive layer 371.

[0144] When the power module 300 further includes the first connection layer 373 , the height of the conductive block 390 in the thickness direction of the frame substrate 310 is substantially equal to the sum of the thicknesses of the first power chip 320 , the first conductive layers 371 - 371 , and the first connection layer 373 .

[0145] The conductive block 390 has a large volume and low resistance. By connecting the first routing layer 340 and the second routing layer 350 via the conductive block 390, the resistance between the first routing layer 340 and the second routing layer 350 can be reduced, thereby reducing the resistance of the power module 300, improving the efficiency of the power module 300, and reducing electrical stress. Furthermore, the conductive block 390 can also support the frame substrate 310 and the power module 300, thereby increasing the strength of the power module 300.

[0146] The number of the conductive blocks 390 can be one or more. In the embodiment of the present application, the number of the conductive blocks 390 is not limited. Figures 4 to 6 In the embodiment of the present application, a power module 300 including two conductive blocks 390 is taken as an example to illustrate.

[0147] See also Figures 4 to 6 In some embodiments, the power module 300 may further include: an external connection layer 385 , which is located on a side of the first wiring layer 340 away from the frame substrate 310 , and is connected to the first wiring layer 340 .

[0148] The external connection layer 385 may be connected to other electronic devices, for example, the other electronic devices may be circuit boards.

[0149] The external connection layer 385 is provided so that the first power chip 320 and the second power chip 330 can be connected to other electronic devices through the first wiring layer 340 and the external connection layer 385 .

[0150] In some examples, the power module 300 may further include a plurality of third connection portions 387 , wherein the plurality of third connection portions 387 may be located between the external connection layer 385 and the first routing layer 340 , and the external connection layer 385 may be connected to the first routing layer 340 via the third connection portions 387 .

[0151] In some examples, the power module 300 may further include a third dielectric layer 386, which may be located between the first surface 311 and the external connection layer 387. Specifically, when the power module 300 further includes a first dielectric layer 383, the third dielectric layer 386 may be located between the first dielectric layer 383 and the external connection layer 385.

[0152] The plurality of third connection portions 387 may be embedded in the third dielectric layer 386 , and the first wiring layer 340 may be embedded in the third dielectric layer 386 .

[0153] In some embodiments, the power module 300 further includes a protective layer 388 . The protective layer 388 is located on a side of the external connection layer 385 facing away from the frame substrate 310 . The protective layer 388 includes a plurality of openings 3880 , and portions of the external connection layer 385 are exposed in the openings 3880 .

[0154] The protective layer 388 has insulating properties. For example, the protective layer 388 may include insulating ink.

[0155] The portion of the external connection layer 385 exposed in the opening 3880 can be used as a pad for connecting to other electronic devices.

[0156] The protection layer 388 can be provided to insulate the area of ​​the external connection layer 385 that is not connected to other electronic devices, thereby improving the short circuit phenomenon.

[0157] In some embodiments, the first routing layer 340 may include a first routing line 341 , a second routing line (not shown), a third routing line 343 , and a fourth routing line 344 .

[0158] The second routing layer 350 includes a fifth routing line 351 , a sixth routing line 352 , and a seventh routing line 353 .

[0159] The external connection layer 385 may include a first pad 3851, a second pad (not shown), a third pad 3853, and a fourth pad 3854. The first pad 3851, the second pad, the third pad 3853, and the fourth pad 3854 may be soldered to the circuit board.

[0160] The plurality of conductive blocks 390 include a first conductive block (not shown), a second conductive block 392 and a third conductive block 393 .

[0161] Among them, the first trace 341 is connected to the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330. At this time, the voltage dynamic point can be located at the first trace 341. The first trace 341 can be connected to the first solder pad 3851. Therefore, the first trace 341 can be connected to the electronic device on the circuit board through the first solder pad 3851. The fifth trace 351 is connected to the second electrode A2 of the first power chip 320, and the fifth trace 351 is connected to the first conductive block (not shown in the figure), and the end of the first conductive block facing away from the fifth trace 351 is connected to the second trace (not shown in the figure), and the second trace can be connected to the second solder pad (not shown in the figure). At this time, the second electrode A2 of the first power chip 320 can be connected to electronic devices on other circuit boards through the fifth trace 351, the first conductive block, the second trace and the second solder pad.

[0162] The sixth trace 352 is connected to the third electrode A3 of the first power chip 320 and the second conductive block 392. The end of the second conductive block 392 facing away from the sixth trace 352 is connected to the third trace 343. The third pad 3853 is connected to the third trace 343. The third pad 3853 can be used to connect to a driver chip, thereby connecting the driver chip to the third electrode A3 of the first power chip. In this case, the third electrode A3 of the first power chip 320 can be connected to electronic devices on the circuit board via the sixth trace 352, the second conductive block 392, the third trace 343, and the third pad 3853.

[0163] The seventh trace 353 is connected to the first electrode A1 of the second power chip 330. The seventh trace 353 is also connected to the third conductive block 393. The end of the third conductive block 393 facing away from the seventh trace 353 is connected to the fourth trace 344. The fourth pad 3854 is connected to the fourth trace 344. At this point, the first electrode A1 of the second power chip 330 can be connected to electronic devices on the circuit board via the seventh trace 353, the third conductive block 393, the fourth trace 344, and the fourth pad 3854.

[0164] An embodiment of the present application also provides a power conversion device.

[0165] Figure 7 is a structural diagram of a power conversion device 400 according to some embodiments, Figure 8 is a partial circuit diagram of a power conversion device 400, wherein: Figure 8 Schematically shows the half-bridge circuit 600 in the power conversion device 400 and a part of the circuit connected to the half-bridge circuit 600 .

[0166] See also Figure 7 and Figure 8 , and combined with Figures 4 to 6The power conversion device 400 may include the power module 300 and circuit board 500 provided in some of the above embodiments. The power module 300 may include: a frame substrate 310, a first power chip 320, a second power chip 330, a first routing layer 340, and a second routing layer 350. The frame substrate 310 includes a first surface 311 and a second surface 312 disposed opposite to each other. The half-bridge circuit 600 includes: the first power chip 320 and the second power chip 330 are both embedded in the frame substrate 310, and the first power chip 320 and the second power chip 330 are spaced apart along a first direction, wherein the first direction F1 intersects the thickness of the frame substrate 310. The first power chip 320 and the second power chip 330 each include a first electrode A1, a second electrode A2, and a third electrode A3, wherein the second electrode A2 and the third electrode A3 are disposed on opposite sides of the first electrode A1. The first routing layer 340 is disposed on the first surface 311, and the second routing layer 350 is disposed on the second surface 312. The circuit board 500 is located on the side of the first routing layer 340 facing away from the frame substrate 310 and is connected to the first routing layer 340. The first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 both face the first routing layer 340. The second electrode A2 of the first power chip 320 and the first electrode A1 of the second power chip 330 both face and are connected to the second routing layer 350.

[0167] The first routing layer 340 includes a first routing line 341 , a second routing line, and a fourth routing line 344 , and the second routing layer 350 includes a fifth routing line 351 and a seventh routing line 353 .

[0168] The first trace 341 is connected to the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 . The first trace 341 is connected to the circuit board 500 .

[0169] The second trace is connected to the fifth trace 351 , the fifth trace 351 is connected to the second electrode A2 of the first power chip 320 , and the second trace is connected to the circuit board 500 .

[0170] The fourth trace 344 is connected to the seventh trace 353 , the seventh trace 353 is connected to the second electrode A2 of the second power chip 330 , and the fourth trace 344 is connected to the circuit board 500 .

[0171] The first power chip 320 and the second power chip 330 can form a half-bridge circuit 600. The frame substrate 310, the first power chip 320, the second power chip 330, the first routing layer 340 and the second routing layer 350 have been introduced in the above embodiments and will not be repeated here.

[0172] The first routing line 341 , the second routing line and the fourth routing line 344 are insulated from each other, and the fifth routing line 351 and the seventh routing line 353 are insulated from each other.

[0173] A voltage swing point between the first electrode A1 of the first power chip 320 and the second electrode A2 of the second power chip 330 is formed on the first trace 341 , and the voltage swing point is connected to the circuit board 500 .

[0174] Signals can be transmitted between the second electrode A2 of the first power chip 320 and the electronic components on the circuit board 500 via the fifth trace 351 and the second trace.

[0175] Signals can be transmitted between the second electrode A2 of the second power chip 330 and the electronic components on the circuit board 500 through the fourth trace 344 and the seventh trace 353 .

[0176] Among them, the power conversion device 400 provided in the embodiment of the present application includes the same structure as the power module 300 provided in some of the above embodiments. Therefore, the power conversion device 400 provided in the embodiment of the present application includes the same beneficial effects as the power module 300 provided in some of the above embodiments, which will not be repeated here.

[0177] See also Figure 6 In some embodiments, the power module 300 may further include an external connection layer 385 , wherein the external connection layer 385 may include a first pad 3851 , a second pad, and a fourth pad 3854 .

[0178] Among them, the first solder pad 3851 can be connected to the first trace 341, and the first solder pad 3851 can be welded to the circuit board 500. At this time, the voltage moving point can be connected to the electronic device on the circuit board 500 through the first trace 341 and the first solder pad 3851.

[0179] The second soldering pad can be soldered to the circuit board 500, and the second soldering pad can also be connected to the second routing line, and the second routing line is connected to the second electrode A2 of the first power chip 320 through the fifth routing line 351. At this time, signals can be transmitted between the electronic device on the circuit board 500 and the second electrode A2 of the first power chip 320 through the second soldering pad, the second routing line and the fifth routing line 351.

[0180] The fourth solder pad 3854 can be soldered to the circuit board 500, and the fourth solder pad 3854 can also be connected to the fourth trace 344, and the fourth trace 344 is connected to the first electrode A1 of the second power chip 330 through the seventh trace 353. Therefore, the electronic devices on the circuit board 500 and the first electrode A1 of the second power chip 330 can transmit signals through the fourth solder pad 3854, the fourth trace 344 and the seventh trace 353.

[0181] In some examples, the external connection layer 385 may further include a third pad 3853 , the first routing layer 340 may further include a third routing line 343 , and the second routing layer 350 may further include a sixth routing line 352 .

[0182] Among them, the third soldering pad 3853 is welded to the circuit board 500, and the third soldering pad 3853 is also connected to the third trace 343. The third trace 343 can be connected to the third electrode A3 of the first power chip 320 through the sixth trace 352. At this time, the electronic device on the circuit board 500 and the third electrode A3 of the first power chip 320 can transmit signals through the third soldering pad 3853, the third trace 343 and the sixth trace 352.

[0183] See also Figure 8 , in addition to the half-bridge circuit 600, Figure 8 Other electronic components connected to the half-bridge circuit 600 are also shown. For example, the power conversion device 400 may further include a positive terminal PV+, a negative terminal PV-, an output terminal VOUT+, a ground terminal GND, a monitoring terminal RT', a first driving terminal GH, a second driving terminal GL, a first capacitor C1, a first resistor R1, a second resistor R2, a second capacitor C2, a first diode D1, a second diode D2, a third diode D3, an adjustable resistor RT, and an inductor L.

[0184] The positive terminal PV+ and the negative terminal PV- can be connected to two output terminals of the solar cell group respectively.

[0185] The first power chip 320 and the second power chip 330 may each include four first electrodes A1 , one third electrode A3 , and three second electrodes A2 .

[0186] The three second electrodes A2 of the second power chip 330 can be connected to the four first electrodes A1 of the first power chip 320. In this case, a voltage swing point can be formed between the three second electrodes A2 of the second power chip 330 and the four first electrodes A1 of the first power chip 320. One end of the inductor L is connected to the four first electrodes A1 of the first power chip 320 and the three second electrodes A2 of the second power chip 330. The other end of the inductor L is connected to the output terminal VOUT+. In this case, one end of the inductor L can be connected to the voltage swing point. The provision of the inductor L can maintain the current stability of the output terminal VOUT+.

[0187] The inductor L may be disposed on the circuit board 500 . In this case, the inductor L may be connected to the first solder pad 3851 through a line on the circuit board 500 , so that the inductor L may be connected to the voltage moving point.

[0188] In other examples, the inductor L may also be embedded in the frame substrate 310 . In this case, the inductor L may be connected to the first trace 341 .

[0189] The four first electrodes A1 of the second power chip 330 can be connected to the positive terminal PV+. The positive terminal PV+ can be disposed on the circuit board 500 and connected to the fourth pad 3854 via a trace on the circuit board 500. The positive terminal PV+ can then be connected to the four first electrodes A1 of the second power chip 330 via the fourth pad 3854, the fourth trace 344, and the seventh trace 353.

[0190] A third electrode A3 of the second power chip 330 can be connected to the first driving terminal GH. The first driving terminal GH can be connected to the first driving chip (not shown in the figure), so that the first driving chip can provide a driving signal for a third electrode A3 of the second power chip 330. In some examples, the first driving chip can be buried in the frame substrate 310. In this case, the first driving chip can be connected to the third electrode A3 of the second power chip 330 through the eighth trace 345 in the first trace layer 340. In other examples, the first driving chip can also be set on the circuit board 500. In this case, the external connection layer 385 can also include a fifth pad. The first driving chip can be connected to the fifth pad through the trace in the circuit board 500, and the fifth pad is connected to the eighth trace 345. Therefore, the first driving chip on the circuit board 500 can be connected to the third electrode A3 of the second power chip 330 through the fifth pad and the eighth trace 345.

[0191] The third electrode A3 of the first power chip 320 can be connected to the second driving terminal GL. The second driving terminal GL can be connected to a second driving chip (not shown in the figure), so that the second driving chip can provide a driving signal for the third electrode A3 of the first power chip 320. In some examples, the second driving chip can be set on the circuit board 500, and the second driving chip can be connected to the third pad 3853 through the wiring in the circuit board 500. In this case, the second driving chip can be connected to the third electrode A3 of the first power chip 320 through the third pad 3853, the third wiring 343 and the sixth wiring 352. In some examples, the second driving chip can be embedded in the frame substrate 310. In this case, the second driving chip can be connected to the third wiring 343 in the first wiring layer 340. Therefore, the second driving chip can be connected to the third electrode A3 of the first power chip 320 through the third wiring 343 and the sixth wiring 352.

[0192] The three second electrodes A2 of the first power chip 320 can be connected to the negative terminal PV-. The negative terminal PV- can be disposed on the circuit board 500 and connected to the second pad via a trace on the circuit board 500. The negative terminal PV- can then be connected to the second electrode A2 of the first power chip 320 via the second pad, the second trace, and the fifth trace 351.

[0193] The first electrode of the first capacitor C1 is connected to the positive terminal PV+, and the second electrode of the first capacitor C1 is connected to the negative terminal PV-. The first capacitor C1 can be used for filtering. For example, the first capacitor C1 can be disposed on the circuit board 500. Alternatively, the first capacitor C1 can be embedded in the frame substrate 310.

[0194] One end of the adjustable resistor RT is connected to the three second electrodes A2 of the first power chip 320 , and the other end of the adjustable resistor RT is connected to the monitoring terminal RT′. Part of the information of the power conversion device 400 can be transmitted to the back-end monitoring center via the monitoring terminal RT′.

[0195] In addition, the three second electrodes A2 of the first power chip 320 may also be connected to the negative terminal PV-. For example, the first capacitor C1 may be disposed on the adjustable resistor RT.

[0196] The first resistor R1 and the second resistor R2 are connected in parallel, and one end of the first resistor R1 and one end of the second resistor R2 are both connected to the second electrode A2 of the first power chip 320, while the other ends of the first resistor R1 and the other ends of the second resistor R2 are both connected to the ground terminal GND. By providing the first resistor R1 and the second resistor R2 in parallel, the voltage of the ground terminal GND can be made close to 0 V. For example, the first resistor R1 and the second resistor R2 can be set on the circuit board 500, or the first resistor R1 and the second resistor R2 can be embedded in the frame substrate 310.

[0197] One end of the second capacitor C2 is connected to the output terminal VOUT, and the other end is connected between the ground terminal GND and the first resistor R1. The second capacitor C2 can play a filtering role. For example, the second capacitor C2 can be set on the circuit board 500, or the second capacitor C2 can be embedded in the frame substrate 310.

[0198] The anode of the first diode D1, the anode of the second diode D2, and the anode of the third diode D3 are all connected to the first pole of the second capacitor C2. The cathode of the first diode D1, the cathode of the second diode D2, and the cathode of the third diode D3 are all connected to the second pole of the second capacitor C2. When a fault occurs in the power conversion device 400, the current can pass through the first diode D1, the second diode D2, and the third diode D3, thereby avoiding the output terminal VOUT+ from outputting a disordered current. For example, the first diode D1, the second diode D2, and the third diode D3 can be arranged on the circuit board 500, or the first diode D1, the second diode D2, and the third diode D3 can also be embedded in the frame substrate 310.

[0199] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in this application should be included within the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A power module, characterized in that: include: A frame substrate, the frame substrate comprising a first surface and a second surface disposed opposite to each other; a first power chip and a second power chip, wherein the first power chip and the second power chip are both embedded in the frame substrate, and the first power chip and the second power chip are spaced apart along a first direction, wherein the first direction intersects with a thickness direction of the frame substrate, the first power chip and the second power chip each include a first electrode, a second electrode, and a third electrode, and the second electrode and the third electrode are disposed on the same side of the first electrode and are both disposed opposite to the first electrode; A first routing layer and a second routing layer, wherein the first routing layer is arranged on the first surface, and the second routing layer is arranged on the second surface; Among them, the first electrode of the first power chip and the second electrode of the second power chip are both facing the first routing layer, and the first electrode of the first power chip and the second electrode of the second power chip are connected through the first routing layer; the second electrode of the first power chip and the first electrode of the second power chip are facing and connected to the second routing layer.

2. The power module according to claim 1, characterized in that: Also includes: The heat dissipation component includes an insulating thermal conductive layer and a heat dissipation layer. The insulating thermal conductive layer covers the surface of the second wiring layer away from the first power chip, and the heat dissipation layer is located on the side of the insulating thermal conductive layer away from the second wiring layer.

3. The power module according to claim 2, characterized in that: The heat dissipation assembly further includes a plurality of heat dissipation fins connected to a surface of the heat dissipation layer facing away from the insulating heat-conducting layer.

4. The power module according to any one of claims 1 to 3, characterized in that: The power module further includes: a first conductive layer, the first conductive layer being disposed on the first electrode of the first power chip, and the first wiring layer being connected to the first electrode of the first power chip through the first conductive layer; And / or, the power module further includes: a second conductive layer, the second conductive layer is arranged on the first electrode of the second power chip, and the second routing layer is connected to the first electrode of the second power chip through the second conductive layer.

5. The power module according to claim 4, characterized in that: Also includes: In the case where the power module further includes: the first conductive layer, the power module further includes a first connection layer, and the first connection layer is provided between the first conductive layer and the first electrode of the first power chip; In the case where the power module further includes the second conductive layer, the power module further includes a second connection layer, and the second connection layer is provided between the first conductive layer and the first electrode of the second power chip.

6. The power module according to any one of claims 1 to 5, characterized in that: The power module further includes: a plurality of first connection portions, the plurality of first connection portions being arranged between the first wiring layer and the first surface, the first wiring layer being connected to the first electrode of the first power chip through a portion of the first connection portions, and the first wiring layer being connected to the second electrode of the second power chip through another portion of the first connection portions; And / or, the power module also includes: multiple second connection parts, the multiple second connection parts are arranged between the second routing layer and the second surface, the second routing layer is connected to the second electrode of the first power chip through a part of the second connection part, and the second routing layer is connected to the first electrode of the second power chip through another part of the second connection part.

7. The power module according to any one of claims 1 to 6, characterized in that: Also includes: A conductive block is embedded in the frame substrate, and the first wiring layer and the second wiring layer are connected through the conductive block.

8. The power module according to any one of claims 1 to 7, characterized in that: Also includes: The external connection layer is located on a side of the first wiring layer away from the frame substrate, and the external connection layer is connected to the first wiring layer.

9. The power module according to claim 8, characterized in that: Also includes: A protective layer is located on a side of the outer connecting layer facing away from the frame substrate, the protective layer comprises a plurality of openings, and a partial area of ​​the outer connecting layer is exposed to the openings.

10. The power module according to any one of claims 1 to 9, characterized in that: The first power chip and the second power chip include field effect transistors or insulated gate bipolar transistors.

11. The power module according to claim 10, characterized in that: The first electrode may be a drain electrode, the second electrode may be a source electrode, and the third electrode may be a gate electrode.

12. A power conversion device, characterized in that: include: Power modules and circuit boards; The power module includes: a frame substrate, a first power chip, a second power chip, a first wiring layer and a second wiring layer The frame substrate includes a first surface and a second surface arranged opposite to each other; the first power chip and the second power chip are both embedded in the frame substrate, and the first power chip and the second power chip are spaced apart along a first direction, wherein the first direction intersects with the thickness direction of the frame substrate, the first power chip and the second power chip each include a first electrode, a second electrode and a third electrode, the second electrode and the third electrode are arranged on the same side of the first electrode and are both arranged opposite to the first electrode; the first wiring layer is arranged on the first surface, and the second wiring layer is arranged on the second surface; the first electrode of the first power chip and the second electrode of the second power chip are both facing the first wiring layer; the second electrode of the first power chip and the first electrode of the second power chip are facing and connected to the second wiring layer; The first routing layer includes a first routing line, a second routing line, and a fourth routing line, and the second routing layer includes a fifth routing line and a seventh routing line; The first wiring is connected to the first electrode of the first power chip and the second electrode of the second power chip, and the first wiring is connected to the circuit board; The second wiring is connected to the fifth wiring, the fifth wiring is connected to the second electrode of the first power chip, and the second wiring is connected to the circuit board; The fourth line is connected to the seventh line, the seventh line is connected to the second electrode of the second power chip, and the fourth line is connected to the circuit board.

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