Antenna device

Abstract

The invention discloses an antenna device which comprises a first substrate, a second substrate, a dielectric layer, a first metal layer and a patch antenna unit. The first substrate has a plurality of via holes. The second substrate is located above the first substrate. The dielectric layer is located between the first substrate and the second substrate. The first metal layer is located between the first substrate and the dielectric layer. The patch antenna unit is located between the second substrate and the dielectric layer. The first metal layer has an opening, and the opening overlaps the patch antenna unit.

Description

Technical Field

[0001] The present invention relates to a communication device, and in particular to an antenna device. Background Art

[0002] With the continuous advancement of communication technology, antenna devices have gradually developed towards miniaturization, broadband, multi-band, and high-gain technologies. Liquid crystal antenna devices, with their advantages of low cost, easy maintenance, and high reliability, have great potential for the development of advanced communication technologies such as 5G and in-vehicle satellite communications.

[0003] The current assembly method for liquid crystal antenna devices involves first pairing a lower substrate with a ground plate and an upper substrate with a patch antenna to form the antenna cell. The lower substrate glass is then thinned, and the cell and high-frequency feed plate are manually aligned and bonded. However, manual alignment and bonding can result in difficult-to-control alignment errors, which can lead to loss of radiation intensity and affect the uniformity of the array antenna device. Summary of the Invention

[0004] The present invention provides an antenna device with reduced radiation intensity loss.

[0005] One embodiment of the present invention provides an antenna device, comprising a first substrate having multiple vias, a second substrate located above the first substrate, a dielectric layer located between the first substrate and the second substrate, a first metal layer located between the first substrate and the dielectric layer, and a patch antenna unit located between the second substrate and the dielectric layer, wherein the first metal layer has an opening, and the opening overlaps the patch antenna unit.

[0006] In one embodiment of the present invention, the center point of the opening overlaps with the center point of the patch antenna unit.

[0007] In one embodiment of the present invention, the plurality of vias include a first row of vias arranged along a first side of the first substrate, a second row of vias arranged along a second side of the first substrate, and a third row of vias arranged along a third side of the first substrate, wherein the second side is opposite to the first side, and the third side connects the first side and the second side.

[0008] In one embodiment of the present invention, the antenna device further includes a signal transceiver component coupled to a fourth side of the first substrate, and the fourth side is opposite to the third side.

[0009] In one embodiment of the present invention, the opening has a rounded rectangular shape, a long central axis of the opening is perpendicular to the first side of the first substrate, and a short central axis of the opening overlaps the center lines of the first and second rows of vias.

[0010] In one embodiment of the present invention, the minimum distance from the center point of the patch antenna unit to the center point line of the third row of vias is 10% to 100% of the minimum distance between the center point line of the first row of vias and the center point line of the second row of vias.

[0011] In one embodiment of the present invention, the opening has a rounded rectangular shape, the long central axis of the opening is parallel to the first side of the first substrate, and the long central axis of the opening does not overlap the center lines of the first and second rows of vias.

[0012] In one embodiment of the present invention, the minimum distance between the long central axis and the center line of the opening is 2% to 20% of the minimum distance between the center points of the first row of vias and the center points of the second row of vias.

[0013] In one embodiment of the present invention, the minimum distance from the center point of the patch antenna unit to the center point line of the third row of vias is 20% to 100% of the minimum distance between the center point line of the first row of vias and the center point line of the second row of vias.

[0014] In an embodiment of the present invention, the antenna device further includes a second metal layer, and the second metal layer is located on a side of the first substrate opposite to the first metal layer.

[0015] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1A is a schematic perspective view of an antenna device 10 according to an embodiment of the present invention;

[0017] Figure 1B It is along Figure 1A A schematic cross-sectional view taken along the section line AA';

[0018] Figure 1C is a schematic top view of an antenna device 10 according to an embodiment of the present invention;

[0019] Figure 2 is a schematic top view of an antenna device 20 according to an embodiment of the present invention;

[0020] Figure 3A is a schematic top view of a substrate 310 and a metal layer 340 of an antenna module M1 according to an embodiment of the present invention;

[0021] Figure 3B is a schematic top view of a substrate 320, a patch antenna unit 150, and a switch element 170 of an antenna module M1 according to an embodiment of the present invention;

[0022] Figure 4A is a simulation curve diagram of the S11 reflection parameter of the antenna device 20 according to an embodiment of the present invention;

[0023] Figure 4B is a simulated curve diagram of the radiation pattern of the antenna device 20 according to one embodiment of the present invention;

[0024] Figure 4C FIG. 4 is a simulation graph of a two-dimensional gain pattern of the antenna device 20 according to an embodiment of the present invention.

[0025] Explanation of symbols:

[0026] 10, 20: Antenna device

[0027] 110, 120, 310, 320:Substrate

[0028] 110T: Upper surface

[0029] 112, 312: vias

[0030] 112A: First row of vias

[0031] 112B: Second row of vias

[0032] 112C: The third row of vias

[0033] 130: dielectric layer

[0034] 132: Medium molecules

[0035] 140, 160, 240, 340: Metal layer

[0036] 142, 242, 342: Opening

[0037] 142L, 142S, 150L, ​​150W: Dimensions

[0038] 150: Patch antenna unit

[0039] 170: Switching element

[0040] 172: Wire

[0041] 180:Signal transceiver component

[0042] 182: Microstrip line

[0043] 184: Conical transmission element

[0044] 190: Frame glue

[0045] 314, 317: U-shaped vias

[0046] 315, 316: Inline vias

[0047] 318: Shunt via

[0048] A-A': hatch line

[0049] AL1, AL2: Long center axis

[0050] AS1, AS2: short center axis

[0051] AV: Midline

[0052] d1: aperture

[0053] d2: pitch

[0054] d3: minimum spacing / channel width

[0055] d4, d6: minimum distance

[0056] d5: minimum spacing

[0057] IS: Input signal

[0058] L1, L2, L3: Center point connection

[0059] M1: Antenna module

[0060] P, Q: Center point

[0061] P1, P2: Alignment layers

[0062] S1: First side

[0063] S2: Second side

[0064] S3: The third side

[0065] S4: The fourth side

[0066] SP:Signal transmission channel

[0067] x: direction

[0068] y: signal transmission direction DETAILED DESCRIPTION

[0069] In the accompanying drawings, the thickness of layers, films, panels, regions, etc. is exaggerated for clarity. Throughout the specification, the same reference numerals represent the same elements. It should be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used herein, "connection" may refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may refer to the presence of other elements between two elements.

[0070] It should be understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a first "element," "component," "region," "layer," or "section" discussed below could be termed a second element, component, region, layer, or section without departing from the teachings herein.

[0071] The terms used herein are for the purpose of describing specific embodiments only and are not intended to be limiting. As used herein, unless the content clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one" or to mean "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "comprising" and / or "including" specify the presence of the features, regions, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or combinations thereof.

[0072] Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, an element described as being on the "lower" side of the other elements would then be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can encompass both "lower" and "upper" orientations, depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, an element described as being "lower" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "lower" or "beneath" can encompass both "upper" and "lower" orientations.

[0073] As used herein, "about," "approximately," "substantially," or "substantially" includes the stated value and an average value within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specific amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, or ±5%. Furthermore, as used herein, "about," "approximately," "substantially," or "substantially" can be used to select a more acceptable range of deviations or standard deviations depending on the optical property, etching property, or other property, rather than using a single standard deviation for all properties.

[0074] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present invention, and will not be interpreted as idealized or overly formal unless expressly defined as such herein.

[0075] Exemplary embodiments are described herein with reference to cross-sectional views that are schematic representations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and / or tolerances, are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include deviations in shape that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and / or nonlinear features. Furthermore, sharp angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the claims.

[0076] Figure 1A is a schematic three-dimensional diagram of an antenna device 10 according to an embodiment of the present invention. Figure 1B It is along Figure 1A A schematic cross-sectional view taken along the section line AA'. Figure 1C 1 is a schematic top view of an antenna device 10 according to an embodiment of the present invention. Figure 1A Omitted Figure 1B The metal layers 140, 160, the sealant 190 and the alignment layers P1, P2 and Figure 1C The signal transceiver component 180, Figure 1C Omitted Figure 1B The substrate 120, dielectric layer 130, metal layer 160, sealant 190 and alignment layers P1 and P2 are shown in FIG. Figures 1A to 1C, the implementation of each element and film layer of the antenna device 10 is further described to clearly understand the overall structure of the antenna device 10, but the present invention is not limited thereto.

[0077] First, please refer to Figure 1A and Figure 1B The antenna device 10 may include a substrate 110, a substrate 120, a dielectric layer 130, a metal layer 140, and a patch antenna unit 150. The substrate 120 is located above the substrate 110, the dielectric layer 130 is located between the substrates 110 and 120. The metal layer 140 is located between the substrate 110 and the dielectric layer 130, and the patch antenna unit 150 is located between the substrate 120 and the dielectric layer 130. The metal layer 140 has an opening 142, and the opening 142 overlaps the patch antenna unit 150.

[0078] The substrate 110 can be used to transmit electromagnetic waves. In some embodiments, the material of the substrate 110 includes glass, but is not limited thereto. The substrate 110 may have a plurality of vias 112, and each via 112 may be filled with a metal material. In some embodiments, the via 112 is a solid metal column, but is not limited thereto. In other embodiments, the via 112 is a hollow metal column. Generally speaking, the aperture d1 of the via 112 may be approximately 50 μm to 500 μm, for example, 100 μm, 200 μm or 400 μm, but is not limited thereto. The thickness of the substrate 110 may be approximately 0.1 mm to 2.0 mm, for example, approximately 0.3 mm, 0.5 mm or 1.0 mm, but is not limited thereto.

[0079] The pitch d2 of the vias 112 may depend on the manufacturing process limits and the wavelength of the electromagnetic waves transmitted. For example, the pitch d2 may refer to the spacing between the center axes of two adjacent vias 112, the spacing between the left side walls of two adjacent vias 112, or the spacing between the right side walls of two adjacent vias 112. In some embodiments, the wavelength of the electromagnetic waves is approximately 2.0 GHz to 100 GHz. In some embodiments, the pitch d2 of the vias 112 is between 100 μm and 1 / 4 of the wavelength of the electromagnetic waves transmitted. In some embodiments, the pitch d2 of the vias 112 is between 100 μm and 1 / 8 of the wavelength of the electromagnetic waves transmitted. In some embodiments, the pitch d2 of the vias 112 is approximately 500 μm. In some embodiments, the pitch d2 between any two adjacent vias 112 is the same.

[0080] For example, a through-hole can be formed on the substrate 110 first, and then a thin seed layer (seed layer) can be formed on the inner sidewall of the through-hole. Then, an electroplating process can be performed on the seed layer to deposit the metal material on the seed layer. Afterwards, the seed layer and the metal material outside the through-hole are removed to complete the production of the conductive hole 112. The metal material can fill the through-hole to form a solid metal column, or the metal material can fill a portion of the through-hole to form a hollow metal column. In the electroplating process, the seed layer can serve as an electrode to facilitate the metal in the electroplating solution to adhere to the seed layer and cause the metal to be deposited. The material of the seed layer can be, for example, nickel palladium (Ni-Pd), but is not limited thereto. The metal material can be any material that can shield electromagnetic waves, such as copper, aluminum, or an alloy thereof, but is not limited thereto.

[0081] Please also refer to Figure 1C In some embodiments, the plurality of vias 112 may include a first row of vias 112A arranged along a first side S1 of the substrate 110 and a second row of vias 112B arranged along a second side S2 of the substrate 110, where the second side S2 of the substrate 110 may be opposite to the first side S1. Electromagnetic waves may be transmitted within the substrate 110 between the first row of vias 112A and the second row of vias 112B.

[0082] The metal layer 140 of the antenna device 10 can have a ground (GND) potential. In some embodiments, the antenna device 10 further includes a metal layer 160, and the metal layer 160 is located on a side of the substrate 110 opposite the metal layer 140. The metal layer 160 can have a ground potential. In some embodiments, the metal layers 140 and 160 are made of a material capable of shielding electromagnetic waves, such as copper, aluminum, silver, gold, or alloys thereof, but are not limited thereto.

[0083] For example, metal layers 140 and 160 are located on the upper and lower sides of substrate 110, respectively, and a first row of vias 112A and a second row of vias 112B are located between metal layers 140 and 160, forming a substrate-integrated waveguide (SIW) structure. Electromagnetic waves can be transmitted through substrate 110 between metal layers 140, 160, and the first and second rows of vias 112A, 112B. This SIW structure eliminates the need for a high-frequency feed plate in antenna device 10. This not only avoids alignment deviations caused by laminating the high-frequency feed plate, thereby reducing radiation intensity loss and improving radiation uniformity of the array antenna device, but also eliminates the manufacturing process and cost of laminating the high-frequency feed plate. Furthermore, because high-frequency signals were previously transmitted between the high-frequency feed plate and glass, thinning the glass layer was necessary to improve transmission efficiency. Therefore, using a SIW structure eliminates the previous manufacturing process of thinning the lower substrate glass.

[0084] In some embodiments, the plurality of conductive vias 112 further include a third row of conductive vias 112C arranged along the third side S3 of the substrate 110. The third side S3 of the substrate 110 can connect the first side S1 and the second side S2. In some embodiments, the third row of conductive vias 112C can form a barrier for electromagnetic wave transmission, reducing the probability of electromagnetic wave dissipation within the substrate 110 while also preventing interference or coupling effects from electromagnetic waves outside the substrate 110. In some embodiments, the plurality of conductive vias 112 are arranged in a U-shape, but this is not limiting.

[0085] The substrate 120 may overlap the substrate 110, and the metal layer 140 may be located between the substrate 110 and the substrate 120. The substrate 120 may include a transparent, translucent, or opaque material. In some embodiments, the substrate 120 may be made of a material with low dielectric loss, such as glass or ceramic.

[0086] The dielectric layer 130 may be located between the substrate 120 and the metal layer 140. The dielectric molecules 132 of the dielectric layer 130 may include, for example, high-frequency liquid crystal molecules. The patch antenna unit 150 may be located on the surface of the substrate 120 facing the dielectric layer 130. The patch antenna unit 150 may couple with electromagnetic waves transmitted by the substrate 110 to enable the antenna device 10 to transmit and receive electromagnetic wave signals. The patch antenna unit 150 may include one or more patch antennas. In some embodiments, the patch antenna unit 150 includes multiple patch antennas arranged in an array.

[0087] Metal layer 140 serves as a ground electrode. By applying a voltage between patch antenna unit 150 and metal layer 140, the orientation of dielectric molecules 132 in dielectric layer 130 can be adjusted, thereby changing the dielectric constant of dielectric layer 130 or the capacitance across dielectric layer 130, thereby altering the phase or radiation frequency of the electromagnetic wave. In some embodiments, the dielectric constant of dielectric layer 130 can be between 2.0 and 4.0.

[0088] The antenna device 10 may further include an alignment layer P1 and an alignment layer P2. The alignment layer P1 may be located between the dielectric layer 130 and the metal layer 140, while the alignment layer P2 may be located between the dielectric layer 130 and the substrate 120, and between the dielectric layer 130 and the patch antenna unit 150. In some embodiments, the alignment layer P1 overlaps the opening 142 of the metal layer 140 and may coat the sidewalls of the opening 142 and the upper surface 110T of the substrate 110, but this is not limiting. In some embodiments, due to the low viscosity of the alignment layer P1 before curing, it is difficult for the alignment layer P1 to adhere to the sidewalls of the opening 142. As a result, the portion of the alignment layer P1 coating the upper surface 110T of the substrate 110 may be disconnected from the portion overlapping the metal layer 140. In other embodiments, the alignment layer P1 does not overlap the opening 142 of the metal layer 140. The alignment layer P1 and the alignment layer P2 may define the initial deflection angle of the dielectric molecules 132 in the dielectric layer 130. The material of the alignment layer P1 and the alignment layer P2 is, for example, polyimide, but the present invention is not limited thereto.

[0089] When no electric field is applied between the patch antenna unit 150 and the metal layer 140, the dielectric molecules 132 in the dielectric layer 130 are aligned along a predetermined direction under the influence of the alignment layers P1 and P2. When an electric field is applied between the patch antenna unit 150 and the metal layer 140, the electric field causes the dielectric molecules 132 in the dielectric layer 130 to deflect. During the transmission of electromagnetic wave signals, the phase of the electromagnetic wave signals changes due to the deflection of the dielectric molecules 132. Therefore, by controlling the voltage applied between the patch antenna unit 150 and the metal layer 140, the deflection angle of the dielectric molecules 132 in the dielectric layer 130 can be controlled, thereby adjusting the phase of the electromagnetic wave signals.

[0090] In some embodiments, the antenna device 10 further includes a switching element 170, and the switching element 170 can be located between the substrate 120 and the dielectric layer 130. The switching element 170 can be electrically connected to the patch antenna unit 150 to control the bias applied to the patch antenna unit 150. For example, the switching element 170 is disposed on the surface of the substrate 120 facing the dielectric layer 130 and is electrically connected to the patch antenna unit 150 via a conductive line 172. In some embodiments, the switching element 170 is a thin film transistor, but is not limited thereto. In some embodiments, the switching element 170 and the conductive line 172 can be formed on the surface of the substrate 120 facing the dielectric layer 130, for example, by a thin film deposition process, a photolithography process, and an etching process. Subsequently, an alignment layer P2 can be formed on the substrate 120, the switching element 170, and the conductive line 172.

[0091] In some embodiments, the antenna device 10 further includes a sealant 190 , which is located between the substrate 110 and the substrate 120 (or between the alignment layer P1 and the alignment layer P2) and at the edges of the substrates 110 and 120. The sealant 190 can seal the periphery of the substrates 110 and 120 to prevent the dielectric molecules 132 in the dielectric layer 130 from leaking out. The material of the sealant 190 can include at least one of polyurethane acrylate (PUA), epoxy acrylate, and silicone, but is not limited thereto. In some embodiments, the antenna device 10 further includes a spacer (not shown) located between the substrate 110 and the substrate 120 (or between the alignment layer P1 and the alignment layer P2) to help maintain the spacing between the substrates 110 and 120.

[0092] The antenna device 10 can be manufactured by aligning the substrate 120 with the substrate 110 and filling the gap between the substrates 110 and 120 with dielectric molecules 132. For example, a sealant 190 can be applied to the alignment layer P1 on the substrate 110 or the alignment layer P2 on the second substrate 120. The dielectric molecules 132 are then dropped into the space enclosed by the alignment layer P1 or P2 and the sealant 190. Subsequently, the substrates 120 and 110 are aligned in a near-vacuum environment, and one of the substrates 110 and 120 is brought toward the other. The sealant 190 then bonds the substrates 110 and 120 together, sealing the dielectric molecules 132 between the alignment layer P1 on the substrate 110 and the alignment layer P2 on the second substrate 120. The antenna device 10 is thus fabricated. In some embodiments, the alignment deviation between the substrate 120 and the substrate 110 is less than 5 μm.

[0093] The antenna device 10 may further include a signal transceiver component 180 (e.g. Figure 1CAs shown), and the signal transceiver component 180 can be coupled to the fourth side S4 of the substrate 110 (as shown Figure 1A ), where the fourth side S4 may be opposite the third side S3. In some embodiments, the signal transceiver assembly 180 includes a microstrip line 182 and a tapered transformer 184. The signal transceiver assembly 180, consisting of the microstrip line 182 and the tapered transformer 184, can be used, for example, to receive and / or transmit electromagnetic waves.

[0094] The electromagnetic waves transmitted by the substrate 110 can be transmitted to the patch antenna unit 150 through the opening 142 of the metal layer 140. The opening 142 of the metal layer 140 can have a rectangular outline. In some embodiments, the opening 142 of the metal layer 140 is a rounded rectangle, but is not limited thereto. In some embodiments, the opening 142 can be an ellipse, a rounded prism, or other applicable shapes. In some embodiments, the opening 142 has a long central axis AL1 and a short central axis AS1, and the long central axis AL1 can be substantially perpendicular to the signal transmission direction y in the substrate 110, and the short central axis AS1 can be substantially parallel to the signal transmission direction y in the substrate 110, but is not limited thereto. The long central axis AL1 of the opening 142 can also be substantially perpendicular to the first side S1 of the substrate 110 (such as Figure 1A As shown). In some embodiments, the short center axis AS1 of the opening 142 can overlap the center line AV between the first row of conductive holes 112A and the second row of conductive holes 112B, and the center line AV can also be the center axis of symmetry of the multiple conductive holes 112. In this way, surface currents with different directions can be generated between the upper and lower sides of the patch antenna unit 150 and the opening 142. For example, the upper side of the patch antenna unit 150 and the upper part of the opening 142 generate a clockwise surface current, and the induced magnetic field is inward (toward the metal layer 160); while the lower side of the patch antenna unit 150 and the lower part of the opening 142 generate a counterclockwise surface current, and the induced magnetic field is outward (toward the substrate 120). These two sides will also interactively change the direction of the induced magnetic field due to high-frequency changes, causing the electromagnetic waves to continuously push outward and radiate out, thereby forming a resonant magnetic moment, thereby radiating the electromagnetic waves upward.

[0095] The substrate 110 of the antenna device 10 may have a signal transmission path SP, and the signal transmission path SP may be located between the first row of vias 112A and the second row of vias 112B. In some embodiments, the first row of vias 112A, the second row of vias 112B, and the third row of vias 112C substantially surround the signal transmission path SP of the substrate 110. For example, the signal transmission path SP of the substrate 110 may be defined by a line L1 connecting the center points of the first row of vias 112A, a line L2 connecting the center points of the second row of vias 112B, and a line L3 connecting the center points of the third row of vias 112C. The center line AV of the first row of vias 112A and the second row of vias 112B may be defined such that the area between the center line L1 and the center line AV is substantially equal to the area between the center line L2 and the center line AV.

[0096] The intersection of the long central axis AL1 and the short central axis AS1 of opening 142 may substantially overlap the center point P of patch antenna unit 150. Generally speaking, center point P may refer to the geometric center point or center of mass of patch antenna unit 150. Dimension 150L of patch antenna unit 150 parallel to the signal transmission direction y may be larger than dimension 142S of opening 142 parallel to the signal transmission direction y, while dimension 150W of patch antenna unit 150 in a direction perpendicular to signal transmission direction y (i.e., direction x) may be smaller than dimension 142L of opening 142 in direction x. In some embodiments, dimension 142S of opening 142 is approximately 1% to 5% of the wavelength of electromagnetic radiation. In some embodiments, dimension 142L of opening 142 is approximately 5% to 25% of the wavelength of the radiation. In some embodiments, dimension 150L of patch antenna unit 150 is approximately 1% to 5% of the wavelength of the radiation. In some embodiments, dimension 150W of patch antenna unit 150 is approximately 1% to 5% of the wavelength of the radiation.

[0097] The minimum distance d3 between the line L1 connecting the center points of the first row of vias 112A and the line L2 connecting the center points of the second row of vias 112B can be considered the channel width d3 of the signal transmission channel SP. By adjusting the minimum distance d4 between the center point P of the patch antenna unit 150 and the line L3 connecting the center points of the third row of vias 112C, the antenna device 10 can achieve relatively better radiation efficiency. In some embodiments, the minimum distance d4 between the center point P of the patch antenna unit 150 and the line L3 connecting the center points of the third row of vias 112C can be approximately 10% to 100% of the channel width d3, for example, approximately 25%, 50%, or 80%.

[0098] Below, use Figures 2 to 4C Continue to describe other embodiments of the present invention, and continue to use Figures 1A to 1CThe component numbers and related contents of the embodiment are the same or similar numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to Figures 1A to 1C The embodiments of the present invention will not be described in detail in the following description.

[0099] Figure 2 1 is a schematic top view of an antenna device 20 according to an embodiment of the present invention. The antenna device 20 may include a substrate 110, a metal layer 240, a patch antenna unit 150, a switch element 170, and a signal transceiver component 180, wherein the switch element 170 may be electrically connected to the patch antenna unit 150 via a wire 172. In addition, the antenna device 20 may further include, for example Figures 1A to 1C The antenna device 10 shown includes a substrate 120 , a dielectric layer 130 , a metal layer 160 , a sealant 190 , and alignment layers P1 and P2 .

[0100] and Figures 1A to 1C Compared with the structure of the antenna device 10 shown in FIG. Figure 2 The structure of the antenna device 20 shown differs primarily in that the opening 242 of the metal layer 240 of the antenna device 20 has a long central axis AL2 and a short central axis AS2. The long central axis AL2 may be substantially parallel to the signal transmission direction y of the substrate 110 or the first side S1 of the substrate 110, while the short central axis AS2 may be substantially perpendicular to the signal transmission direction y of the substrate 110. That is, the short central axis AS2 may extend in the direction x. The substrate 110, metal layer 240, and metal layer 160 may form a SIW structure, thereby being used to transmit electromagnetic wave signals fed into the antenna device 20 via the signal transceiver assembly 180. This also eliminates the need for a high-frequency feed plate, thereby resolving issues caused by misalignment of the high-frequency feed plate.

[0101] In some embodiments, the long central axis AL2 of the opening 242 does not overlap the center line AV between the first row of vias 112A and the second row of vias 112B. By offsetting the long central axis AL2 of the opening 242 from the center axis of symmetry AV of the plurality of vias 112, the induced magnetic field generated around the left half of the opening 242 and the left half of the patch antenna unit 150 and the induced magnetic field generated around the right half of the opening 242 and the right half of the patch antenna unit 150 are in opposite directions, forming a resonant magnetic moment, thereby radiating electromagnetic waves.

[0102] For example, a minimum distance d5 is defined between the long central axis AL2 of the opening 242 and the centerline AV of the first and second rows of vias 112A, 112B. This minimum distance d5 can be approximately 2% to 20% of the channel width d3, for example, approximately 5%, 10%, or 15%. By adjusting the minimum distance d6 between the center point P of the patch antenna unit 150 and the line L3 connecting the center points of the third row of vias 112C, the antenna device 20 can achieve relatively better radiation efficiency. In some embodiments, the minimum distance d6 between the center point P of the patch antenna unit 150 and the line L3 connecting the center points of the third row of vias 112C is approximately 20% to 100% of the channel width d3, for example, approximately 30%, 50%, or 70%.

[0103] Figure 3A FIG. 3 is a schematic top view of a substrate 310 and a metal layer 340 of an antenna module M1 according to an embodiment of the present invention. Figure 3B FIG2 is a schematic top view of a substrate 320, a patch antenna unit 150, and a switch element 170 of an antenna module M1 according to an embodiment of the present invention. The switch element 170 can be electrically connected to the patch antenna unit 150 via a wire 172. Similarly to the antenna device 20, the antenna module M1 can also include, for example, the dielectric layer 130, the metal layer 160, the signal transceiver component 180, the sealant 190, and the alignment layers P1 and P2 of the antenna device 10.

[0104] and Figure 2 Compared with the structure of the antenna device 20 shown in FIG. Figure 3A and Figure 3B The main difference in the structure of the antenna module M1 shown is that the vias 312 of the substrate 310 of the antenna module M1 include multiple groups of U-shaped vias 314, the metal layer 340 has multiple openings 342, and the orthographic projections of the multiple groups of U-shaped vias 314 on the metal layer 340 respectively surround the multiple openings 342. In some embodiments, the multiple openings 342 are arranged in an array. In some embodiments, the vias 312 of the substrate 310 also include multiple groups of straight-line vias 315, 316 and U-shaped vias 317 distributed between the multiple groups of U-shaped vias 314. The straight-line vias 315, 316 and U-shaped vias 317 each connect two adjacent groups of U-shaped vias 314, so that the input signal IS entering the substrate 310 can be diverted to each group of U-shaped vias 314 along the signal transmission channel formed between the vias 312 with minimal loss, as shown in FIG. Figure 3AAs shown by the arrows between the vias 312, the vias 312 of the substrate 310 also include multiple shunt vias 318 located at the T-junctions of the signal transmission path. These shunt vias 318 can split the transmitted signal in two with minimal energy loss. In some embodiments, when multiple groups of U-shaped vias 314 are arranged in a 4×4 two-dimensional array, the signal strength entering each group of U-shaped vias 314 is ideally 1 / 16 of the strength of the input signal IS.

[0105] In addition, the antenna module M1 may include multiple patch antenna units 150, and the multiple patch antenna units 150 may be arranged in an array. After the substrate 310 and the substrate 320 of the antenna module M1 are paired, the multiple patch antenna units 150 of the antenna module M1 may respectively overlap the multiple openings 342 of the metal layer 340. In some embodiments, the center point P of each patch antenna unit 150 of the antenna module M1 substantially overlaps the center point Q of the corresponding opening 342. The center point Q of the opening 342 may refer to the intersection of the long center axis and the short center axis of the opening 342. In this way, the electromagnetic wave signals traveling to the multiple groups of U-shaped group conductive holes 314 can be respectively transmitted to the multiple patch antenna units 150 through the multiple openings 342.

[0106] In some embodiments, antenna module M1 can be considered to include multiple antenna devices 20 arranged in an array. In some embodiments, antenna devices 20 with different capacitances are arranged in a two-dimensional array to assemble antenna module M1. The electromagnetic wave signals received or transmitted from patch antenna unit 150 are given a phase difference corresponding to the capacitance of each antenna device 20. Therefore, antenna module M1 can have strong directivity in a specific direction, thereby achieving mutual conversion between the electromagnetic wave signals received or transmitted by patch antenna unit 150 and the voltage signal applied between patch antenna unit 150 and metal layer 140.

[0107] Figure 4A is a simulation graph of the S11 reflection parameter of the antenna device 20 according to an embodiment of the present invention. Figure 4B is a simulation graph of the radiation pattern (power pattern) of the antenna device 20 according to an embodiment of the present invention. Figure 4C is a simulation graph of the two-dimensional (xz plane) realized gain pattern of the antenna device 20 according to one embodiment of the present invention.

[0108] In the simulation test, by changing the bias voltage applied between the patch antenna unit 150 and the metal layer 140, the dielectric constant of the dielectric layer 130 can be switched between 3.61 and 2.41. Figure 4AIt can be seen that when the dielectric constant of the dielectric layer 130 is 3.61, the electromagnetic waves are almost all reflected, indicating that very little energy is radiated; and when the dielectric constant of the dielectric layer 130 is 2.41, the electromagnetic waves are rarely reflected, indicating that relatively more radiation is emitted.

[0109] from Figure 4B It can be seen that when the input electromagnetic wave energy is 0.5 watts (W) and the dielectric constant ε of dielectric layer 130 is 2.41, the radiated energy is approximately 0.2 W, resulting in a forward radiation efficiency of 40%. Furthermore, when the input electromagnetic wave energy is 0.5 W and the dielectric constant ε of dielectric layer 130 is 3.61, the radiated energy is approximately 0.004 W, with a forward radiation efficiency of less than 1%. Dividing the radiated energy (0.2 W) when the dielectric constant ε of dielectric layer 130 is 2.41 by the radiated energy (0.004 W) when the dielectric constant ε of dielectric layer 130 is 3.61 yields an on / off ratio of approximately 45 to 50, indicating an energy difference of approximately 45 to 50 times. This relatively large on / off ratio can further improve beamforming directivity when array pairing is performed.

[0110] Figure 4C The radial axis is the value of the realized gain calculated by taking into account factors such as impedance mismatch. This value has no unit and can be defined as Realized gain = gain × (1 - S11^2), where gain is the ideal gain and S11 is the reflection parameter. In addition, from Figure 4C It can be seen that the antenna device 20 only has upward radiation (forward radiation) with z>0 (θ≤90°), wherein the radiation gain is between 1.0 and 1.5, and there is no back radiation with z<0 (θ>90°). In other words, the antenna device of the present invention can also avoid the back radiation loss or interference from the feeding stub of the existing high-frequency feeding board.

[0111] In summary, the antenna device of the present invention utilizes a substrate-integrated waveguide structure to replace the existing high-frequency feed plate, thereby avoiding radiation intensity loss caused by misalignment and improving radiation uniformity. Furthermore, the antenna device of the present invention also features enhanced forward radiation efficiency and on / off ratio, further improving beamforming directivity and eliminating backscatter.

[0112] Although the present invention has been disclosed above with reference to the embodiments, they are not intended to limit the present invention. Any person skilled in the art may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. An antenna device, comprising: A first substrate having a plurality of via holes; a second substrate, located above the first substrate; a dielectric layer, located between the first substrate and the second substrate; a first metal layer, located between the first substrate and the dielectric layer; as well as A patch antenna unit is located between the second substrate and the dielectric layer. The first metal layer has an opening, and the opening overlaps the patch antenna unit. 2 . The antenna device according to claim 1 , wherein a center point of the opening overlaps a center point of the patch antenna unit.

3. The antenna device according to claim 1 , wherein the plurality of vias comprises: a first row of vias arranged along a first side of the first substrate; a second row of conductive holes arranged along a second side of the first substrate, wherein the second side is opposite to the first side; as well as The third row of conducting holes is arranged along a third side of the first substrate, and the third side connects the first side and the second side. 4 . The antenna device according to claim 3 , further comprising a signal transceiver component coupled to a fourth side of the first substrate, wherein the fourth side is opposite to the third side. 5 . The antenna device according to claim 3 , wherein the opening has a rectangular shape, a long central axis of the opening is perpendicular to the first side of the first substrate, and a short central axis of the opening overlaps a center line of the first row of vias and a center line of the second row of vias.

6. The antenna device according to claim 5, wherein the minimum distance from the center point of the patch antenna unit to the center point line of the third row of vias is 10% to 100% of the minimum distance between the center point line of the first row of vias and the center point line of the second row of vias.

7. The antenna device of claim 3, wherein the opening has a rectangular shape, a long central axis of the opening is parallel to the first side of the first substrate, and the long central axis of the opening does not overlap a center line of the first row of vias and a center line of the second row of vias.

8. The antenna device according to claim 7, wherein the minimum distance between the long central axis of the opening and the center line is 2% to 20% of the minimum distance between the center points of the first row of vias and the center points of the second row of vias.

9. The antenna device as claimed in claim 8, wherein the minimum distance from the center point of the patch antenna unit to the line connecting the center points of the third row of vias is 20% to 100% of the minimum spacing between the line connecting the center points of the first row of vias and the line connecting the center points of the second row of vias. 10 . The antenna device of claim 1 , further comprising a second metal layer located on a side of the first substrate opposite to the first metal layer.

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