Substrate processing apparatus and substrate processing method

Abstract

The invention provides a wafer processing system which appropriately performs processing corresponding to both a metal-containing resist and a chemically amplified resist. The wafer processing system is a substrate processing apparatus that performs a process relating to EUV patterning, and includes: a plurality of first processing apparatuses (161) that perform a process of a wafer to which a chemically amplified resist is applied; and a plurality of second processing devices (162) for processing the wafer coated with the metal-containing resist. The processing space of the first processing device (161) and the processing space of the second processing device (162) are separated from each other. Each of the second processing devices (162) performs a process corresponding to a process performed by any one of the first processing devices (161).

Claims

1. A substrate processing device for performing EUV patterning, characterized in that: include: a plurality of first processing devices for processing a substrate coated with a chemically amplified resist; and a plurality of second processing devices for processing substrates coated with metal-containing type resists, The processing space of the first processing device and the processing space of the second processing device are divided from each other. Each of the second processing devices performs a process corresponding to a process performed by any one of the first processing devices.

2. The substrate processing device according to claim 1, wherein: It also includes a processing block with multiple layers stacked up and down. At least one of the first processing devices and at least one of the second processing devices are respectively disposed at different layers in the processing block.

3. The substrate processing device according to claim 2, wherein: Also included is a heat treatment module disposed in at least one layer of the processing block, The heat treatment module comprises a first heat treatment unit and a second heat treatment unit, wherein the first heat treatment unit and the second heat treatment unit comprise a hot plate and a cooling plate provided together with the hot plate, and are provided in the same layer. The first heat treatment unit further comprises a nitrogen atmosphere adjustment portion provided above the cooling plate for making the nitrogen concentration of the atmosphere surrounding the substrate placed on the cooling plate higher than that of air, thereby constituting at least one of the second processing devices. The second heat treatment unit does not include the nitrogen atmosphere adjusting portion, but constitutes at least one of the first processing apparatuses.

4. The substrate processing device according to claim 2, wherein: include: An interface workstation having a first tower connected to the processing block and used for transferring substrates between the first tower and the exposure device, and having a plurality of storage spaces for storing substrates formed in multiple sections above and below; a first nitrogen atmosphere placement unit provided in any one of the storage spaces of the first tower, for placing substrates in an atmosphere having a nitrogen concentration higher than that of air; and A first atmospheric atmosphere loading unit is provided in any of the plurality of storage spaces of the first tower, where the first nitrogen atmosphere loading unit is not provided, and is configured to load substrates in an atmospheric environment. The first nitrogen atmosphere placement unit constitutes at least one of the second processing devices. The first atmospheric atmosphere placement unit constitutes at least one of the first processing devices.

5. The substrate processing device according to claim 2, wherein: The processing block is divided into a first area and a second area in a left-right direction intersecting the up-down direction. The substrate processing device comprises: A second tower is provided with a plurality of storage spaces for storing substrates in multiple sections, and substrates are transferred between the first area and the second area; a second nitrogen atmosphere placement unit provided in any one of the storage spaces of the second tower, for placing substrates in an atmosphere having a nitrogen concentration higher than that of air; and A second atmospheric atmosphere placement unit is provided in any of the plurality of storage spaces of the second tower, where the second nitrogen atmosphere placement unit is not provided, for placing substrates in an atmospheric environment. The second nitrogen atmosphere placement unit constitutes at least one of the second processing devices. The second atmospheric atmosphere placement unit constitutes at least one of the first processing devices.

6. The substrate processing device according to claim 1 or 2, wherein: It also includes a cleaning module for cleaning the substrate coated with the metal-containing resist. The cleaning module includes a first cleaning liquid supply portion for supplying a hydrophilic cleaning liquid to the substrate and a second cleaning liquid supply portion for supplying a hydrophobic cleaning liquid to the substrate. The cleaning module constitutes at least one of the second processing devices.

7. The substrate processing device according to claim 6, wherein: The hydrophilic cleaning liquid is a solvent that dissolves the hydrophobic portion, which is the unexposed portion of the substrate. The hydrophobic cleaning liquid is a solvent that dissolves the hydrophilic portion, which is an intermediate exposure region at the boundary between the unexposed portion and the exposed portion in the substrate.

8. The substrate processing device according to claim 7, wherein: The cleaning module first supplies the hydrophilic cleaning liquid from the first cleaning liquid supply unit and then supplies the hydrophobic cleaning liquid from the second cleaning liquid supply unit.

9. A substrate processing method performed by a substrate processing device for EUV patterning, characterized in that: include: A first step of processing a substrate coated with a chemically amplified resist is performed; and The second step of processing the substrate coated with the metal-containing resist is performed. A processing space in which the first process is performed and a processing space in which the second process is performed are separated from each other.

10. The substrate processing method according to claim 9, wherein: The second step includes: a first cleaning liquid supplying step of supplying a hydrophilic cleaning liquid to the substrate coated with the metal-containing type resist; and a second cleaning liquid supplying step of supplying a hydrophobic cleaning liquid to the substrate coated with the metal-containing type resist.

11. The substrate processing device according to claim 1, wherein: The invention further comprises a reaction promoting unit for placing the substrate in an environment in which the concentration of a reaction promoting gas that promotes the reaction of the film containing the metal type resist is set higher than that of air. The reaction promoting section constitutes at least one of the second processing devices.

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