Broadband high-emissivity transparent intelligent radiator for space application and preparation method thereof

Abstract

The invention discloses a space application-oriented broadband high-emissivity transparent intelligent radiator and a preparation method thereof, and relates to an intelligent radiator and a preparation method thereof. The problems that the visible transmittance ratio and infrared emissivity modulation of an existing transparent thermal control device are mutually restricted, the visual field definition and the thermal regulation and control capacity cannot be considered at the same time, the infrared emissivity value in the high-temperature state is small, the heat dissipation efficiency of the device is low, the phase change temperature is high, the space environment stability is insufficient, the preparation window of VO2 is narrow, and the preparation cost is low are solved. And material selection of the top protection layer is limited. The radiator is composed of an ultraviolet protection interference anti-reflection layer, a W-doped VO2 phase change layer, a SiO2 dielectric layer, a transparent infrared high-reflection layer and a substrate from top to bottom in sequence. The preparation method comprises the following steps: 1, pretreatment; 2, preparing a SiO2 dielectric layer; 3, preparing a W-doped VO2 phase change layer; and 4, preparing the ultraviolet protection interference anti-reflection layer. The invention provides the broadband high-emissivity transparent intelligent radiator for space application and the preparation method thereof.

Description

Technical Field

[0001] The invention relates to an intelligent radiator and a preparation method thereof. Background Art

[0002] As humanity's deep space exploration missions advance, the moon, as the near-Earth object with the greatest development potential, has been widely considered a priority for future manned bases and long-term scientific research platforms. In lunar base construction, thermal control technology is a key component in ensuring the proper functioning of life support systems, the comfort of personnel, and the long-term reliable operation of equipment. In particular, balancing lighting, heat dissipation, and thermal insulation in transparent structures such as observation windows, plant cultivation chamber covers, and transparent domes has become a core technical challenge in thermal control system design.

[0003] The lunar surface has no atmosphere, and heat conduction relies primarily on thermal radiation. The temperature difference between day and night is extremely large, with daytime surface temperatures reaching over 120°C and nighttime temperatures dropping to below -170°C. This extreme thermal environment requires transparent structures to not only possess excellent optical transparency to ensure natural lighting, but also the ability to dynamically regulate thermal radiation during the daytime and nighttime, achieving efficient heat dissipation during the day and heat preservation at night. Furthermore, transparent thermal control devices face extreme external environments such as strong ultraviolet radiation during their service life, and their material stability and structural integrity are directly related to the safety and lifespan of the cabin's thermal control system.

[0004] Existing transparent thermal radiation control technologies primarily fall into two categories: electrochromic and thermochromic. Electrochromic technology relies on an external power source, resulting in excessive energy consumption and limiting its application in resource-constrained environments. In contrast, thermochromic technology can achieve adaptive responses without external energy input, offering the advantage of higher energy efficiency and thus attracting widespread attention. Vanadium dioxide (VO2), a typical inorganic thermochromic material, exhibits significant changes in infrared transmittance during its phase transition, while maintaining relatively stable optical properties in the visible region. Its phase transition critical temperature is also controllable, making it a current research hotspot. To enhance its infrared control performance, existing VO2-based thermal control devices generally employ a Fabry-Pérot (FP) cavity structure. By introducing a composite structure consisting of a transparent infrared reflective layer, a dielectric layer, and a VO2 phase change layer, the radiation characteristics in the infrared band can be adjusted, thereby improving thermal comfort and energy efficiency.

[0005] Although the existing technology has made certain progress in membrane structure design, FP cavity control mechanism and stability improvement, there are still obvious deficiencies in the following key technical points: (1) There is a mutually restrictive relationship between visible transmittance and infrared emissivity modulation. The visible light transmittance is relatively low, which limits the lighting effect and visual comfort, resulting in the problem that the clarity of vision and thermal control ability cannot be taken into account at the same time; (2) The infrared emissivity control range is limited, especially under high temperature conditions, the infrared emissivity value is small, and it is difficult to achieve efficient heat dissipation; (3) The phase change temperature is too high to meet the actual thermal control response requirements; (4) The space environment stability is insufficient, and the device is easily affected by ultraviolet radiation and extreme temperature differences, resulting in degradation or even failure of thermal control performance; (5) The preparation window of VO2 is narrow, and the choice of top protective layer material is limited. Summary of the Invention

[0006] The present invention aims to solve the problems of the mutual restriction between visible transmittance and infrared emissivity modulation of existing transparent thermal control devices, the inability to take into account both visual clarity and thermal control capability at the same time, the small infrared emissivity value under high temperature conditions, the low heat dissipation efficiency of the device, the high phase transition temperature, the insufficient stability in the space environment, the narrow preparation window of VO2, and the limited selection of top protective layer materials. The present invention further provides a wide-band, high-emissivity transparent intelligent radiator for space applications and a preparation method thereof.

[0007] A wide-band, high-emissivity, transparent intelligent radiator for space applications consists of, from top to bottom, an ultraviolet protection interference anti-reflection layer, a W-doped VO2 phase change layer, a SiO2 dielectric layer, a transparent infrared high-reflection layer, and a substrate.

[0008] A method for preparing a wide-band, high-emissivity, transparent intelligent radiator for space applications is carried out in the following steps:

[0009] 1. Preprocessing:

[0010] The substrate covered with the transparent infrared high reflective layer was ultrasonically treated and dried with nitrogen;

[0011] 2. Preparation of SiO2 dielectric layer:

[0012] At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of 0.5 Pa, temperature of 25°C to 300°C, argon gas flow rate of 50 sccm to 100 sccm, oxygen gas flow rate of 5 sccm to 10 sccm, gas pressure of 0.4 Pa to 1.5 Pa and sputtering power of 100 W to 400 W, a SiO2 thin film is deposited on the transparent infrared high reflective layer by using radio frequency magnetron sputtering technology to obtain a SiO2 dielectric layer;

[0013] 3. Preparation of W-doped VO2 phase change layer:

[0014] At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of 1.5 Pa, 400 Hz ~ 450 Hz frequency, 30 μs ~ 50 μs pulse width, 150 W ~ 300 W power, 550 V ~ 600 V voltage, 0.4 Pa ~ 1.5 Pa deposition pressure, 80 sccm ~ 90 sccm argon flow rate, 0.4 sccm ~ 3 sccm oxygen flow rate and substrate temperature of 100 ° C ~ 400 ° C, a W-doped VO2 thin film was deposited on the SiO2 dielectric layer by high energy pulsed magnetron sputtering technology to obtain a W-doped VO2 phase change layer;

[0015] 4. Preparation of UV protection interference anti-reflection layer:

[0016] At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of Pa, substrate temperature of room temperature, argon gas flow rate of 50sccm~90sccm, oxygen gas flow rate of 5sccm~10sccm, gas pressure of 0.4Pa~1.5Pa and sputtering power of 100w~400w, a thin film is deposited on the W-doped VO2 phase change layer by using DC magnetron sputtering technology to obtain an ultraviolet protection interference anti-reflection layer, and finally annealing treatment is performed to complete the preparation method of a wide-band high-emissivity transparent intelligent radiator for space applications.

[0017] The beneficial effects of the present invention are:

[0018] Based on the principles of interference antireflection, FP cavity enhanced absorption and ultraviolet high-absorption metal oxide protection, the present invention constructs a multi-layer film structure with multiple functional coupling characteristics, and successfully achieves the coordinated optimization of four key performance indicators: visible transmittance, infrared emissivity control range, phase transition temperature and space environment stability.

[0019] First, without affecting the clarity of the field of view, the emissivity control capability in the infrared band is significantly improved and the high-temperature emissivity value is increased, effectively enhancing the dynamic regulation performance of thermal radiation;

[0020] Second, through material doping and structural design, the phase transition temperature of VO2 was lowered to near room temperature, expanding the applicable temperature range of the device and meeting the device's demand for efficient and reversible thermal regulation.

[0021] Third, high-quality films with good density, strong bonding, and controllable thickness were obtained through magnetron sputtering and assembled into devices. The synergistic strategy of "room-temperature deposition of a protective layer followed by overall annealing" addressed the technical difficulties of limited protective layer selection and significantly improved cycling stability under extreme temperature differences.

[0022] Fourth, by introducing a functional layer to absorb ultraviolet rays, the ultraviolet shielding ability of the device is improved, the service life of the device is significantly extended, safety and reliability are guaranteed, and maintenance costs are reduced.

[0023] The present invention not only achieves significant improvements in photothermal control performance, but also demonstrates superior performance in structural stability and space service reliability. It has good engineering applicability and is particularly suitable for the multifunctional coordinated control and long-term service requirements of transparent thermal control devices in deep space environments such as lunar bases. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a structural schematic diagram of the wide-band high-emissivity transparent intelligent radiator for space applications of the present invention, where 1 is the substrate, 2 is the transparent infrared high-reflection layer, 3 is the SiO2 dielectric layer, 4 is the W-doped VO2 phase change layer, and 5 is the UV protection interference anti-reflection layer. DETAILED DESCRIPTION

[0025] Specific implementation method 1, combined with Figure 1 Specific description: This embodiment is a wide-band high-emissivity transparent intelligent radiator for space applications, which is composed of an ultraviolet protection interference anti-reflection layer, a W-doped VO2 phase change layer, a SiO2 dielectric layer, a transparent infrared high-reflection layer and a substrate from top to bottom.

[0026] This embodiment proposes constructing a tunable FP cavity structure with tungsten-doped vanadium dioxide (W-VO2) as its core, introducing a functional surface protection layer above it, and combining the rational selection of multifunctional inorganic materials with optical structure coupling to achieve dynamic control of wide-band thermal radiation from the ultraviolet to the infrared band. This film structure achieves high infrared emissivity at high temperatures, significantly enhancing the device's radiative heat dissipation capacity and improving thermal comfort in the cabin. At low temperatures, its infrared emissivity decreases, effectively suppressing heat loss and achieving a thermal insulation effect. Furthermore, this structure exhibits excellent visible light transmittance and strong UV shielding capabilities, thus meeting the comprehensive requirements of the lunar base for natural lighting, safety, and long-term service stability.

[0027] In order to achieve the coordinated improvement of multiple performances, the present invention selects inorganic materials to construct a stable film system, which includes, from top to bottom in sequence: an ultraviolet protection interference antireflection layer / a W-doped VO2 phase change layer / a SiO2 dielectric layer / a transparent infrared high reflection layer, where: the transparent infrared high reflection layer serves as the bottom transparent conductive reflection layer, having both good visible light transmittance and infrared reflection ability, and can be used to enhance the comprehensive thermal control efficiency of the device; the SiO2 dielectric layer serves as the dielectric layer, having characteristics of high visible light transmittance, zero absorption, and low infrared refractive index, meeting the dual requirements of optical path regulation and interference enhancement in the F-P cavity structure; the W-doped VO2 phase change layer serves as the core phase change functional layer, whose thermochromic characteristics can achieve temperature control adjustment of the emissivity in the infrared band without significantly changing the visible light state, but it has the characteristics of 2 < n (refractive index) < 4 and 0 < k (absorption coefficient) < 1 in the visible light band, which easily leads to low transmittance and weak ultraviolet resistance itself; the ultraviolet protection interference antireflection layer has a significant first-order interference antireflection effect and strong absorption ability in the ultraviolet band, and can effectively shield external ultraviolet radiation, thereby greatly improving the environmental adaptability and service life of the device.

[0028] To solve technical problems such as poor film layer structure uniformity, unstable interfaces, and difficulty in precisely controlling the phase change layer VO2, this embodiment provides a preparation method for a multi-layer structure thermal control device. This method uses magnetron sputtering technology to deposit each film layer in sequence, and realizes high-precision control of the film layer thickness and high-quality construction of the multi-layer structure by regulating key process parameters such as sputtering power, gas pressure, substrate temperature, and deposition time. Aiming at the problems that the VO2 phase change layer is highly sensitive to oxygen partial pressure and temperature and its stoichiometry is difficult to stabilize, an innovative "room temperature deposition protection layer + overall annealing" collaborative strategy is introduced, that is, a top protection layer is deposited under room temperature conditions to avoid the adverse effects on the formation of the VO2 phase during the high-temperature deposition process, and then through unified post-annealing treatment, the stable formation of the VO2 phase and the collaborative regulation of the interface structure are realized in a controllable atmosphere. This scheme not only effectively improves the crystallization quality of the VO2 thin film, but also significantly expands the selection range of the top protection layer material, enhancing the overall thermal control function and environmental adaptability of the device.

[0029] In summary, through an integrated scheme of collaborative design of functional materials, optimization of the coupled film system structure, and high-quality preparation process, this embodiment solves key problems such as the decline of thermal control performance and structural failure of traditional thermal control devices in extreme environments, and significantly improves their thermal regulation performance, environmental adaptability, and engineering practicability in deep space application scenarios such as lunar bases.

[0030] The beneficial effects of this embodiment are:

[0031] This implementation is based on the principles of interference anti-reflection, FP cavity enhanced absorption and ultraviolet high-absorption metal oxide protection, and constructs a multi-layer film structure with multiple functional coupling characteristics, successfully achieving the coordinated optimization of four key performance indicators: visible transmittance, infrared emissivity control range, phase transition temperature and space environment stability.

[0032] First, without affecting the clarity of the field of view, the emissivity control capability in the infrared band is significantly improved and the high-temperature emissivity value is increased, effectively enhancing the dynamic regulation performance of thermal radiation;

[0033] Second, through material doping and structural design, the phase transition temperature of VO2 was lowered to near room temperature, expanding the applicable temperature range of the device and meeting the device's demand for efficient and reversible thermal regulation.

[0034] Third, high-quality films with good density, strong bonding, and controllable thickness were obtained through magnetron sputtering and assembled into devices. The synergistic strategy of "room-temperature deposition of a protective layer followed by overall annealing" addressed the technical difficulties of limited protective layer selection and significantly improved cycling stability under extreme temperature differences.

[0035] Fourth, by introducing a functional layer to absorb ultraviolet rays, the ultraviolet shielding ability of the device is improved, the service life of the device is significantly extended, safety and reliability are guaranteed, and maintenance costs are reduced.

[0036] This implementation not only achieves significant improvements in photothermal control performance, but also demonstrates superior performance in structural stability and space service reliability. It has good engineering applicability and is particularly suitable for the multifunctional coordinated control and long-term service requirements of transparent thermal control devices in deep space environments such as lunar bases.

[0037] Specific embodiment 2: This embodiment differs from specific embodiment 1 in that the UV protection interference anti-reflection layer is a TiO2 film, a ZnO film, or a CeO2 film; and the thickness of the UV protection interference anti-reflection layer is 10nm to 500nm. Other aspects are the same as specific embodiment 1.

[0038] Specific embodiment 3: This embodiment differs from specific embodiment 1 or 2 in that the thickness of the W-doped VO2 phase change layer is 5 nm to 200 nm. Other aspects are the same as specific embodiment 1 or 2.

[0039] Specific embodiment 4: This embodiment differs from specific embodiments 1 to 3 in that the thickness of the SiO2 dielectric layer is 100 nm to 3000 nm. Other aspects are the same as specific embodiments 1 to 3.

[0040] Specific embodiment 5: This embodiment differs from specific embodiments 1 to 4 in that the transparent infrared high-reflection layer is an ITO film or a silver nano-island film; the thickness of the transparent infrared high-reflection layer is 10nm to 500nm. This is the same as specific embodiments 1 to 4.

[0041] Specific embodiment 6: This embodiment differs from specific embodiments 1 to 5 in that the substrate is made of ordinary glass, quartz glass, or tempered glass; and the thickness of the substrate is 1 mm to 3 mm. Other aspects are the same as specific embodiments 1 to 5.

[0042] Specific embodiment seven: This embodiment provides a method for preparing a wide-band high-emissivity transparent intelligent radiator for space applications, which is carried out in the following steps:

[0043] 1. Preprocessing:

[0044] The substrate covered with the transparent infrared high reflective layer was ultrasonically treated and dried with nitrogen;

[0045] 2. Preparation of SiO2 dielectric layer:

[0046] At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of 0.5 Pa, temperature of 25°C to 300°C, argon gas flow rate of 50 sccm to 100 sccm, oxygen gas flow rate of 5 sccm to 10 sccm, gas pressure of 0.4 Pa to 1.5 Pa and sputtering power of 100 W to 400 W, a SiO2 thin film is deposited on the transparent infrared high reflective layer by using radio frequency magnetron sputtering technology to obtain a SiO2 dielectric layer;

[0047] 3. Preparation of W-doped VO2 phase change layer:

[0048] At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of 1.5 Pa, 400 Hz ~ 450 Hz frequency, 30 μs ~ 50 μs pulse width, 150 W ~ 300 W power, 550 V ~ 600 V voltage, 0.4 Pa ~ 1.5 Pa deposition pressure, 80 sccm ~ 90 sccm argon flow rate, 0.4 sccm ~ 3 sccm oxygen flow rate and substrate temperature of 100 ° C ~ 400 ° C, a W-doped VO2 thin film was deposited on the SiO2 dielectric layer by high energy pulsed magnetron sputtering technology to obtain a W-doped VO2 phase change layer;

[0049] 4. Preparation of UV protection interference anti-reflection layer:

[0050] At a vacuum degree of 10 -3 Pa~10 -5Under the conditions of Pa, substrate temperature of room temperature, argon gas flow rate of 50sccm~90sccm, oxygen gas flow rate of 5sccm~10sccm, gas pressure of 0.4Pa~1.5Pa and sputtering power of 100w~400w, a thin film is deposited on the W-doped VO2 phase change layer by using DC magnetron sputtering technology to obtain an ultraviolet protection interference anti-reflection layer, and finally annealing treatment is performed to complete the preparation method of a wide-band high-emissivity transparent intelligent radiator for space applications.

[0051] Specific embodiment eight: This embodiment differs from specific embodiment seven in that the ultrasonic treatment in step one is carried out at a power of 150W to 250W for 10 to 30 minutes. Other aspects are the same as specific embodiment seven.

[0052] Specific embodiment 9: This embodiment differs from specific embodiment 7 or 8 in that the annealing treatment in step 4 is performed in an argon atmosphere at a temperature of 300° C. to 400° C. for 1 to 5 hours. Other aspects are the same as specific embodiment 7 or 8.

[0053] Specific embodiment 10: This embodiment differs from specific embodiments 7 to 9 in that the annealing treatment in step 4 is performed in an argon atmosphere at a heating rate of 1°C / min to 5°C / min to 300°C to 400°C. Other aspects are the same as specific embodiments 7 to 9.

[0054] The following examples are used to verify the beneficial effects of the present invention:

[0055] Example 1:

[0056] A wide-band, high-emissivity, transparent intelligent radiator for space applications consists of, from top to bottom, an ultraviolet protection interference anti-reflection layer, a W-doped VO2 phase change layer, a SiO2 dielectric layer, a transparent infrared high-reflection layer, and a substrate.

[0057] The ultraviolet protection interference anti-reflection layer is a TiO2 film; the thickness of the ultraviolet protection interference anti-reflection layer is 80nm.

[0058] In the W-doped VO2 phase change layer, W accounts for 2% of the total number of W and V atoms; the thickness of the W-doped VO2 phase change layer is 20 nm.

[0059] The thickness of the SiO2 dielectric layer is 800nm.

[0060] The transparent infrared high reflection layer is an ITO film; the thickness of the transparent infrared high reflection layer is 185nm.

[0061] The substrate is made of quartz glass; the thickness of the substrate is 1 mm.

[0062] A method for preparing a wide-band, high-emissivity, transparent intelligent radiator for space applications is carried out in the following steps:

[0063] 1. Preprocessing:

[0064] The substrate covered with the transparent infrared high reflective layer was ultrasonically treated for 30 min at a power of 200 W and then dried with nitrogen gas;

[0065] 2. Preparation of SiO2 dielectric layer:

[0066] At a vacuum degree of 10 -4 Under the conditions of 0.4 Pa, temperature of 25°C, argon gas flow rate of 80 sccm, oxygen gas flow rate of 5 sccm, gas pressure of 0.4 Pa and sputtering power of 180 W, a SiO2 thin film was deposited on the transparent infrared high reflective layer by using radio frequency magnetron sputtering technology to obtain a SiO2 dielectric layer;

[0067] 3. Preparation of W-doped VO2 phase change layer:

[0068] At a vacuum degree of 10 -4 Under the conditions of 1.5 Pa, 400 Hz frequency, 50 μs pulse width, 180 W power, 600 V voltage, 0.9 Pa deposition pressure, 80 sccm argon flow rate, 1.5 sccm oxygen flow rate and 200 ° C substrate temperature, W-doped VO2 thin film was deposited on the SiO2 dielectric layer by high energy pulsed magnetron sputtering technology to obtain a W-doped VO2 phase change layer;

[0069] 4. Preparation of UV protection interference anti-reflection layer:

[0070] At a vacuum degree of 10 -4 Pa, substrate temperature is room temperature, argon gas flow rate is 80sccm, oxygen gas flow rate is 5sccm, gas pressure is 0.4Pa and sputtering power is 200w, DC magnetron sputtering technology is used to deposit a thin film on the W-doped VO2 phase change layer to obtain an ultraviolet protection interference anti-reflection layer. Finally, in an argon atmosphere, the temperature is raised to 400℃ at a heating rate of 1℃ / min, and annealed for 3h in an argon atmosphere and a temperature of 400℃, thus completing the preparation method of a wide-band, high-emissivity transparent intelligent radiator for space applications.

[0071] Example 2: This example differs from Example 1 in that the annealing time in step 4 is 2 hours. Other aspects are the same as Example 1.

[0072] Example 3: This example differs from Example 1 in that the annealing time in step 4 is 4 hours. Other aspects are the same as Example 1.

[0073] Example 4: This example differs from Example 1 in that the thickness of the SiO2 dielectric layer is 300 nm. Other aspects are the same as Example 1.

[0074] Example 5: This example differs from Example 1 in that the thickness of the SiO2 dielectric layer is 500 nm. Other aspects are the same as Example 1.

[0075] Example 6: This example differs from Example 1 in that the thickness of the SiO2 dielectric layer is 1100 nm. Other aspects are the same as Example 1.

[0076] Example 7: This example differs from Example 1 in that the thickness of the SiO2 dielectric layer is 1400 nm. Other aspects are the same as Example 1.

[0077] Example 8: This example differs from Example 1 in that the thickness of the W-doped VO2 phase change layer is 10 nm. Other aspects are the same as Example 1.

[0078] Example 9: This example differs from Example 1 in that the thickness of the SiO2 dielectric layer is 800 nm, the thickness of the W-doped VO2 phase change layer is 15 nm, and the annealing time in step 4 is 3 h. Other aspects are the same as Example 1.

[0079] Example 10: This example differs from Example 1 in that the thickness of the SiO2 dielectric layer is 800 nm, the thickness of the W-doped VO2 phase change layer is 25 nm, and the annealing time in step 4 is 3 h. Other aspects are the same as Example 1.

[0080] To verify the comprehensive performance of the device, a multi-dimensional testing system was designed, including: measuring the changes in the device's infrared emissivity at different operating temperatures based on variable-temperature infrared reflectance spectroscopy and the blackbody radiation model; calculating the visible light transmittance and UV / NIR shielding efficiency by combining UV-visible-near-infrared spectral transmittance testing, the human eye visual function, and the solar spectrum weighting function; and systematically evaluating the long-term stability and structural reliability of the device in harsh space environments through extreme temperature difference cyclic stability testing (-197°C to 120°C, placing the device in liquid nitrogen, taking it out, and heating it in a 120°C oven, and repeating this cycle).

[0081] The broadband, high-emissivity, transparent, intelligent thermal control device fabricated in Example 1 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.35, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.89. Emissivity testing from 0°C to 70°C reveals an emissivity change of 0.54. Its low-temperature visible transmittance (380nm-780nm) is 65% at 0°C, and 61% at 70°C. Its UV transmittance (200nm-380nm) is less than 15% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 30% at both 0°C and 70°C. It exhibits no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0082] The broadband, high-emissivity, transparent, intelligent thermal control device prepared in Example 2 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.39, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.7. Emissivity testing from 0°C to 70°C revealed an emissivity change of 0.31. Its low-temperature visible transmittance (380nm-780nm) is 60% at 0°C, and 55% at 70°C. Its ultraviolet transmittance (200nm-380nm) is less than 14% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 27% at both 0°C and 70°C. It exhibited no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0083] The broadband, high-emissivity, transparent, intelligent thermal control device fabricated in Example 3 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.36, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.81. Emissivity testing from 0°C to 70°C reveals an emissivity change of 0.45. Its low-temperature visible transmittance (380nm-780nm) is 61% at 0°C, and 58% at 70°C. Its UV transmittance (200nm-380nm) is less than 13% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 31% at both 0°C and 70°C. It exhibits no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0084] The broadband, high-emissivity, transparent, intelligent thermal control device prepared in Example 4 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.15, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.55. Emissivity testing from 0°C to 70°C shows an emissivity change of 0.4. Its low-temperature visible transmittance (380nm-780nm) at 0°C is 64%, and its high-temperature visible transmittance (380nm-780nm) at 70°C is 61%. Its ultraviolet transmittance (200nm-380nm) is less than 15% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 30% at both 0°C and 70°C. It exhibits no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0085] The broadband, high-emissivity, transparent, intelligent thermal control device fabricated in Example 5 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.24, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.70. Emissivity testing from 0°C to 70°C reveals an emissivity change of 0.46. Its low-temperature visible transmittance (380nm-780nm) is 65% at 0°C, and 60% at 70°C. Its UV transmittance (200nm-380nm) is less than 15% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 30% at both 0°C and 70°C. It exhibits no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0086] The broadband, high-emissivity, transparent, intelligent thermal control device prepared in Example 6 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.5, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.93. Emissivity testing from 0°C to 70°C revealed an emissivity change of 0.43. Its low-temperature visible transmittance (380nm-780nm) at 0°C is 66%, and its high-temperature visible transmittance (380nm-780nm) at 70°C is 62%. Its UV transmittance (200nm-380nm) is less than 15% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 30% at both 0°C and 70°C. It exhibited no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0087] The broadband, high-emissivity, transparent, intelligent thermal control device prepared in Example 7 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.6, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.9. Emissivity testing from 0°C to 70°C shows an emissivity change of 0.3. Its low-temperature visible transmittance (380nm-780nm) is 63% at 0°C, and 60% at 70°C. Its ultraviolet transmittance (200nm-380nm) is less than 15% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 30% at both 0°C and 70°C. It exhibits no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0088] The broadband, high-emissivity, transparent, intelligent thermal control device prepared in Example 8 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.32, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.82. Emissivity testing from 0°C to 70°C shows an emissivity change of 0.50. Its low-temperature visible transmittance (380nm-780nm) at 0°C is 71%, and its high-temperature visible transmittance (380nm-780nm) at 70°C is 67%. Its ultraviolet transmittance (200nm-380nm) at both 0°C and 70°C is less than 18%, and its near-infrared transmittance (780nm-2500nm) at both 0°C and 70°C is less than 34%. It exhibited no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0089] The broadband, high-emissivity, transparent, intelligent thermal control device prepared in Example 9 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.34, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.86. Emissivity testing from 0°C to 70°C revealed an emissivity change of 0.52. Its low-temperature visible transmittance (380nm-780nm) is 68% at 0°C, and 63% at 70°C. Its ultraviolet transmittance (200nm-380nm) is less than 17% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 31% at both 0°C and 70°C. It exhibited no performance degradation after 10,000 cycles under extreme temperature fluctuations.

[0090] The broadband, high-emissivity, transparent, intelligent thermal control device prepared in Example 10 has a phase transition temperature of 25°C. Its low-temperature emissivity (2.5μm-25μm) at 0°C is 0.37, and its high-temperature emissivity (2.5μm-25μm) at 70°C is 0.85. Emissivity testing from 0°C to 70°C revealed an emissivity change of 0.48. Its low-temperature visible transmittance (380nm-780nm) at 0°C is 58%, and its high-temperature visible transmittance (380nm-780nm) at 70°C is 54%. Its UV transmittance (200nm-380nm) is less than 12% at both 0°C and 70°C, and its near-infrared transmittance (780nm-2500nm) is less than 24% at both 0°C and 70°C. It exhibited no performance degradation after 10,000 cycles under extreme temperature fluctuations.

Claims

1. A wide-band, high-emissivity, transparent intelligent radiator for space applications, characterized by It consists of an ultraviolet protection interference anti-reflection layer, a W-doped VO2 phase change layer, a SiO2 dielectric layer, a transparent infrared high-reflection layer and a substrate from top to bottom.

2. A wide-band high-emissivity transparent intelligent radiator for space applications according to claim 1, characterized in that The ultraviolet protection interference anti-reflection layer is a TiO2 film, a ZnO film or a CeO2 film; the thickness of the ultraviolet protection interference anti-reflection layer is 10nm~500nm.

3. The wide-band high-emissivity transparent intelligent radiator for space applications according to claim 1, characterized in that The thickness of the W-doped VO2 phase change layer is 5nm~200nm.

4. The wide-band high-emissivity transparent intelligent radiator for space applications according to claim 1, characterized in that The thickness of the SiO2 dielectric layer is 100nm~3000nm.

5. The wide-band high-emissivity transparent intelligent radiator for space applications according to claim 1, characterized in that The transparent infrared high reflection layer is an ITO film or a silver nano-island film; the thickness of the transparent infrared high reflection layer is 10nm~500nm.

6. The wide-band high-emissivity transparent intelligent radiator for space applications according to claim 1, characterized in that The substrate is made of ordinary glass, quartz glass or tempered glass; the thickness of the substrate is 1mm to 3mm.

7. The method for preparing a wide-band high-emissivity transparent intelligent radiator for space applications according to claim 1, characterized in that It is carried out in the following steps:

1. Preprocessing: The substrate covered with the transparent infrared high reflective layer was ultrasonically treated and dried with nitrogen; 2. Preparation of SiO2 dielectric layer: At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of 0.5 Pa, temperature of 25°C to 300°C, argon gas flow rate of 50 sccm to 100 sccm, oxygen gas flow rate of 5 sccm to 10 sccm, gas pressure of 0.4 Pa to 1.5 Pa and sputtering power of 100 W to 400 W, a SiO2 thin film is deposited on the transparent infrared high reflective layer by using radio frequency magnetron sputtering technology to obtain a SiO2 dielectric layer; 3. Preparation of W-doped VO2 phase change layer: At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of 1.5 Pa, 400 Hz ~ 450 Hz frequency, 30 μs ~ 50 μs pulse width, 150 W ~ 300 W power, 550 V ~ 600 V voltage, 0.4 Pa ~ 1.5 Pa deposition pressure, 80 sccm ~ 90 sccm argon flow rate, 0.4 sccm ~ 3 sccm oxygen flow rate and substrate temperature of 100 ° C ~ 400 ° C, a W-doped VO2 thin film was deposited on the SiO2 dielectric layer by high energy pulsed magnetron sputtering technology to obtain a W-doped VO2 phase change layer; 4. Preparation of UV protection interference anti-reflection layer: At a vacuum degree of 10 -3 Pa~10 -5 Under the conditions of Pa, substrate temperature of room temperature, argon gas flow rate of 50sccm~90sccm, oxygen gas flow rate of 5sccm~10sccm, gas pressure of 0.4Pa~1.5Pa and sputtering power of 100w~400w, a thin film is deposited on the W-doped VO2 phase change layer by using DC magnetron sputtering technology to obtain an ultraviolet protection interference anti-reflection layer, and finally annealing treatment is performed to complete the preparation method of a wide-band high-emissivity transparent intelligent radiator for space applications.

8. The method for preparing a wide-band high-emissivity transparent intelligent radiator for space applications according to claim 7, characterized in that The ultrasonic treatment in step 1 is specifically carried out at a power of 150W to 250W for 10min to 30min.

9. The method for preparing a wide-band high-emissivity transparent intelligent radiator for space applications according to claim 7, characterized in that The annealing treatment in step 4 is specifically performed in an argon atmosphere at a temperature of 300° C. to 400° C. for 1 h to 5 h.

10. The method for preparing a wide-band high-emissivity transparent intelligent radiator for space applications according to claim 9, characterized in that The annealing treatment in step 4 is specifically carried out in an argon atmosphere at a heating rate of 1°C / min to 5°C / min to raise the temperature to 300°C to 400°C.

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