Anti-radiation method for erbium-doped optical fiber amplifier based on active fading

Abstract

The invention relates to the technical field of erbium-doped optical fiber amplifiers, in particular to an erbium-doped optical fiber amplifier anti-radiation method based on active fading, which comprises the following steps: performing an irradiation experiment and a fading experiment on an erbium-doped optical fiber amplifier to obtain a performance degradation curve and a performance recovery curve of the erbium-doped optical fiber amplifier; the detector obtains a performance parameter decline value of the erbium-doped optical fiber amplifier, and when the performance parameter decline value exceeds a preset threshold value, the erbium-doped optical fiber amplifier is closed; determining a fading parameter based on the current radiation parameter, the performance degradation curve and the performance recovery curve; based on the determined color fading parameters, carrying out color fading treatment on the erbium-doped optical fiber by utilizing a pumping source; stopping the fading treatment when the performance parameter decline value is smaller than a preset threshold value, starting the erbium-doped optical fiber amplifier, and completing active fading anti-radiation treatment; the stability of the anti-radiation method can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of erbium-doped fiber amplifiers, and in particular to an anti-radiation method of an erbium-doped fiber amplifier based on active fading. Background Art

[0002] Erbium-doped fiber amplifiers (EDFAs) are core components in modern optical communication systems. Due to their high gain, low noise, wide bandwidth, simple structure, and independence from polarization states, EDFAs have rapidly gained widespread application. With the development of multiple space laser communication projects by organizations such as NASA and ESA, EDFAs have gradually found applications in space communications. However, EDFAs are extremely sensitive to the radiation environment in space. Erbium-doped fiber, due to its Al-Er-P co-doped structure, is highly sensitive to radiation. Ionizing radiation can alter the operating characteristics of erbium-doped fiber and even cause it to fail completely, severely impacting the reliability and lifespan of EDFA systems. Therefore, research on EDFA radiation resistance technology is a critical issue that must be addressed in space applications.

[0003] Current solutions to EDFA radiation resistance primarily include passive and active protection methods. Existing passive protection solutions primarily enhance EDFA radiation resistance through the addition of heavy metal shielding, but this approach does not fundamentally address EDFA radiation sensitivity. Furthermore, the addition of heavy metal shielding adds additional weight and volume, failing to meet the miniaturization and lightweight requirements of space applications. Active protection methods, currently commonly used, based on hydrogen loading technology, are inherently unstable. Over time and as heat accumulates in the fiber, hydrogen in the fiber gradually escapes, causing the radiation resistance of the erbium-doped fiber to deteriorate.

[0004] The radiation loss of erbium-doped fiber is primarily due to the formation of color centers. These centers are formed when defects and impurities in the fiber capture electrons and holes ionized by high-energy radiation. These centers can be eliminated or reduced by optical or thermal effects, a phenomenon known as fading. Summary of the Invention

[0005] In view of the above problems, the present invention provides an anti-radiation method for an erbium-doped fiber amplifier based on active fading, which solves the technical problems of low radiation resistance and limited stability of the anti-radiation method in the prior art.

[0006] On the one hand, the present invention provides an erbium-doped fiber amplifier radiation-resistant device based on active fading, comprising an optical switch, an isolator, an erbium-doped fiber amplifier, a beam splitter, a detector, and a processing circuit; the erbium-doped fiber amplifier is provided with a pump source; the optical switch, isolator, erbium-doped fiber amplifier, and beam splitter are connected in sequence, one beam output by the beam splitter is connected to the detector, the detector is connected to the processing circuit, and the processing circuit is respectively connected to the optical switch and the pump source.

[0007] In one aspect, the present invention provides a radiation-resistant method for an erbium-doped fiber amplifier radiation-resistant device based on the active fading method, comprising:

[0008] Step S1, performing irradiation experiments and fading experiments on an erbium-doped fiber amplifier, and obtaining an anti-radiation fading model of the erbium-doped fiber amplifier based on the experimental data, wherein the anti-radiation fading model can obtain fading parameters according to radiation parameters;

[0009] Step S2: The detector obtains the output optical power of the erbium-doped fiber amplifier and determines whether the output optical power is lower than a preset threshold;

[0010] Step S3: when the output optical power is lower than the preset threshold, turning off the optical switch; inputting the anti-radiation fading model based on the current radiation parameters to determine the fading parameters;

[0011] Step S4: performing fading processing on the erbium-doped fiber based on the determined fading parameters; the detector obtains the output optical power of the erbium-doped fiber amplifier after the fading processing;

[0012] Step S5, returning to step S4, stopping the fading process until the output optical power after the fading process is greater than the preset threshold, turning on the optical switch, and completing the active fading anti-radiation process.

[0013] Preferably, step S1 specifically includes:

[0014] Step S1-1, performing an irradiation experiment on the erbium-doped fiber amplifier, obtaining the output optical power of the erbium-doped fiber amplifier corresponding to each radiation parameter by adjusting the radiation parameters, wherein the radiation parameters include the ambient radiation dose rate and the total radiation dose, and establishing a first lookup table recording the correspondence between the radiation parameters and the output optical power;

[0015] Step S1-2, performing an active fading simulation experiment on the erbium-doped fiber amplifier, and obtaining the corresponding output optical power of the erbium-doped fiber amplifier by adjusting the fading parameters; the fading parameters include the fading optical power, the optical fading time, the fading heating power, and the thermal fading time; and establishing a second lookup table recording the correspondence between the output optical power and the fading parameters;

[0016] Step S1-3: Determine the anti-radiation fading model using the first lookup table and the second lookup table.

[0017] Preferably, step S4 specifically includes:

[0018] Based on the determined faded optical power and faded time in the fade parameters, the processing circuit controls the pump source, and uses the pump source to send pump laser to the erbium-doped fiber amplifier to perform fade processing on the erbium-doped fiber.

[0019] Preferably, the anti-radiation device further comprises a resistance heating plate, which is connected to the processing circuit and the erbium-doped fiber amplifier respectively;

[0020] Step S4 specifically includes:

[0021] Based on the determined fading heating power and thermal fading time in the fading parameters, the processing circuit controls the resistance heating plate to perform fading processing on the erbium-doped optical fiber.

[0022] Preferably, step S5 specifically includes: returning to step S4, until the output optical power is greater than the preset threshold, stopping the fading process, and the processing circuit turning on the signal source.

[0023] Preferably, the optical switch is a 1×1 electrically controlled optical switch, and the pump source is a 980nm laser.

[0024] Preferably, the beam splitter is a 1×2 beam splitter having a 99% output end and a 1% output end, and the 1% output end is connected to the detector.

[0025] Compared with the prior art, the present invention has at least the following beneficial effects:

[0026] (1) The corresponding relationship between radiation parameters and the output optical power of the erbium-doped fiber amplifier is obtained through irradiation experiments and fading experiments, and an anti-radiation fading model including the fading parameters is established. This model can calculate and match the optimal fading parameters based on the current radiation environment when the output optical power of the erbium-doped fiber amplifier decreases, thereby ensuring the accuracy and efficiency of the restoration process. The present invention can dynamically adjust the fading process based on real-time monitoring data, improving the anti-radiation recovery effect and system reliability.

[0027] (2) The present invention uses a pump light source or a resistive heater to fade the erbium-doped fiber, restoring the amplifier's optical power to above a preset threshold. When the fiber amplifier's performance degrades due to radiation, the system monitors its output optical power and automatically applies a fading treatment based on a radiation-resistant fading model, improving the stability of the erbium-doped fiber amplifier in complex radiation environments.

[0028] (3) The anti-radiation method for erbium-doped fiber amplifiers proposed in the present invention effectively restores the radiation attenuation of EDFA based on active fading technology. There is no need to install heavy metal protection or pre-process the optical fiber. Instead, the optical fiber's own effects are used to achieve active protection and extend the service life of EDFA. The active fading device is relatively independent of the original EDFA system and will not interfere with the normal operation of the system. When anti-radiation treatment is required, the system can automatically switch to fading mode and automatically return to normal working mode after the treatment is completed. In addition, the module can be easily integrated into the existing EDFA system and has good compatibility and scalability. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings are only for purposes of illustrating particular embodiments and are not to be considered limiting of the invention.

[0030] Figure 1 This is a flow chart of the radiation resistance method of an erbium-doped fiber amplifier based on active fading provided by the present invention.

[0031] Figure 2 This is a detailed flow chart of the radiation resistance method of the erbium-doped fiber amplifier based on active fading provided by the present invention.

[0032] Figure 3 This is a structural schematic diagram of the active fading-based erbium-doped fiber amplifier radiation-resistant device provided by the present invention.

[0033] Figure 4 Schematic diagram of the anti-radiation equipment based on the thermal fading solution provided by the present invention.

[0034] Figure 5 Schematic diagram of the anti-radiation device based on the light fading solution provided by the present invention.

[0035] Figure 6 The present invention provides a curve showing the change of erbium-doped optical fiber loss with radiation dose under different radiation doses.

[0036] Figure 7 The present invention provides a time-dependent recovery spectrum of an erbium-doped optical fiber under the action of the optical fading effect.

[0037] Figure 8 The present invention provides a time-dependent recovery spectrum of an erbium-doped optical fiber under the action of the thermal fading effect. DETAILED DESCRIPTION

[0038] In order to more clearly understand the above-mentioned objects, features and advantages of the present invention, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. In addition, the present invention can also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present invention is not limited by the specific embodiments disclosed below.

[0039] This invention provides a radiation-resistant method for erbium-doped fiber amplifiers. Specifically, considering the accelerated decomposition of color centers in optical fibers by fading, a composite model of EDFA radiation and fading is established based on the radiation effect mechanism of EDFAs. This method, based on active fading, comprehensively considers factors such as the uneven distribution of optical power and heat in the optical path, as well as the radiation dose rate and total radiation dose in the space environment. This method achieves radiation-resistant EDFA designs with long-term stability and high radiation resistance. This method helps ensure the long-term stability of the EDFA's average output wavelength and power in the space radiation environment during long-term space missions.

[0040] like Figure 3 As shown, the present invention discloses an anti-radiation device for an erbium-doped fiber amplifier based on active fading, comprising: an optical switch, an isolator, an erbium-doped fiber amplifier, a beam splitter, a detector, and a processing circuit; the signal source, isolator, erbium-doped fiber amplifier, and beam splitter are connected in sequence, one beam output by the beam splitter is connected to the detector, the detector is connected to the processing circuit, the processing circuit is respectively connected to the optical switch, the erbium-doped fiber amplifier, and the fading device, and the fading device is connected to the erbium-doped fiber amplifier.

[0041] like Figure 1 、 Figure 2 As shown, a radiation resistance method of the active fading erbium-doped fiber amplifier radiation resistance device is disclosed, and the specific implementation steps are as follows:

[0042] Step S1: performing irradiation experiments and fading experiments on an erbium-doped fiber amplifier, and obtaining an anti-radiation fading model of the erbium-doped fiber amplifier based on the experimental data, wherein the anti-radiation fading model can obtain fading parameters according to radiation parameters.

[0043] In space radiation environments, high-energy particles interact with optical fiber materials, generating color centers within the fiber, increasing fiber loss and degrading EDFA performance. Under the influence of light of specific wavelengths or high temperatures, certain point defects and color centers within the fiber become unstable, accelerating their decomposition or transforming into other defects, thereby reducing the fiber's radiation loss.

[0044] In this step, the present invention obtains the correlation between the EDFA output performance recovery and the fading effect under various radiation conditions through experiments, and extracts the fading parameters required to achieve radiation recovery under different environmental radiation conditions.

[0045] First, the mechanism of the radiation effect of erbium-doped fiber, a key component of EDFA, is explained at the empirical and theoretical levels. The number of color centers in erbium-doped fiber reflects the magnitude of radiation-induced loss. The specific formula of the radiation model based on the generation and decomposition of color centers is:

[0046]

[0047] Among them, α k (ν,z) represents the loss caused by the color center at frequency ν and position z, f(D′) represents the amount of color center generated, which is a constant under the condition of a certain spatial radiation dose rate. The second term on the right represents the degradation of the color center, where m is the kinetic order of the fitting model, β k is a constant between 0 and 1, τ k is the time constant of the kth color center.

[0048] In a specific embodiment of the present invention, an erbium-doped fiber amplifier (EDFA) is first subjected to an irradiation experiment to study the effect of the radiation environment on its optical performance. Different radiation dose rates and total radiation doses are applied to the EDFA in a controlled radiation environment, and the corresponding output optical power is measured and recorded. During the experiment, different environmental radiation dose rates and total radiation doses can be set multiple times, and output optical power data is collected using a power meter during each experiment. Based on the experimental data, a first lookup table is established, which records the corresponding relationship between various radiation parameters and the EDFA output optical power.

[0049] Active fading simulation experiments were then conducted on the EDFA to explore the impact of different fading conditions on fiber loss recovery. These experiments included both optical and thermal fading. In the optical fading experiments, the power and duration of the fading light were adjusted, while in the thermal fading experiments, the power and duration of the thermal fading were adjusted. The corresponding EDFA output optical power was then obtained. The measured output optical power data was used to construct a second lookup table. The first lookup table records the relationship between the fading parameters and the EDFA output optical power.

[0050] The present invention combines the data of the first lookup table and the second lookup table, associates the output optical power of the first lookup table with the output optical power of the second lookup table, and establishes an anti-radiation fading model. The anti-radiation fading model can obtain active fading parameters according to the input radiation dose.

[0051] like Figure 7 The figure shows the performance recovery amount and recovery spectrum over time in the light fading experiment. Figure 8 The performance recovery amount and recovery spectrum over time of the thermal fading experiment are shown.

[0052] Through the above steps, the present invention establishes a corresponding relationship model between the output optical power and the radiation parameters, and also establishes a corresponding relationship model between the output optical power and the corresponding fading parameters, which can be used for subsequent active fading operation control.

[0053] Step S2: The detector obtains the output optical power of the erbium-doped fiber amplifier and determines whether the output optical power is lower than a preset threshold.

[0054] During the operation of the erbium-doped fiber amplifier, the detector detects the output optical signal of the erbium-doped fiber amplifier to obtain the output optical power of the fiber amplifier.

[0055] When the output optical power exceeds the preset threshold, the EDFA's output performance remains above the minimum requirement, and the EDFA remains unchanged. That is, when the EDFA is functioning normally, the entire system remains unchanged. When the output optical power falls below the preset threshold, it indicates that the erbium-doped fiber amplifier requires active bleaching and radiation protection.

[0056] The preset threshold value can be set according to the requirements of actual application, and can be a fixed value or a value that changes with time, which is not limited in the present invention.

[0057] Step S3: when the output optical power is lower than the preset threshold, turning off the signal source; inputting the anti-radiation fading model based on the current radiation parameters to determine the fading parameters.

[0058] In this step, when the output optical power of the EDFA is lower than the preset threshold, the processing circuit turns off the signal source, thereby turning off the erbium-doped fiber amplifier.

[0059] Obtain radiation parameters such as the dose rate and total radiation dose of the current environmental radiation, input the anti-radiation fading model, and obtain the fading parameters required for subsequent fading operations, which may include fading light power and light fading time, etc., and may also include fading heating power and thermal fading time.

[0060] Step S4: the fading device performs fading processing on the erbium-doped optical fiber based on the determined fading parameters; the detector obtains the output optical power of the erbium-doped optical fiber amplifier after the fading processing;

[0061] In this step, the control system drives the fading device to perform the fading process based on the fading parameters. Specifically, the fading power and fading time of the fading device are set. The pump source is a 980nm semiconductor laser, which also serves as the pump laser for the erbium-doped fiber amplifier. The 980nm semiconductor laser is switched from a pumping mode to an active fading mode. By controlling the laser to inject short, intense pump pulses into the EDFA optical path, the erbium-doped fiber is optically fading, thereby achieving EDFA fading. The detector acquires the output optical power of the erbium-doped fiber amplifier in real time after the fading process.

[0062] Step S5, returning to step S4, until the performance parameter is higher than the preset threshold, starting the erbium-doped fiber amplifier to complete the active fading anti-radiation treatment.

[0063] When the optical power at the output end of the EDFA is higher than the preset threshold, the 980nm semiconductor laser is restored to the pumping working state, the 1550nm semiconductor laser and related circuits are started, and the EDFA system is restored to the normal working mode and continues to operate in the original way.

[0064] Through the above method, the control system of the present invention can automatically start the active fading device according to the real-time monitored changes in EDFA output performance, and adjust the working state of the active fading device according to the real-time monitored changes in output performance to ensure that each fading process can achieve the best anti-radiation effect.

[0065] In order to illustrate the effectiveness of the method proposed in the present invention, the above technical solution of the present invention is described in detail below through a specific embodiment.

[0066] Example 1

[0067] This embodiment discloses a specific implementation of radiation resistance of an erbium-doped fiber amplifier using the thermal fading effect, which is described in detail as follows.

[0068] An erbium-doped fiber amplifier radiation-resistant device based on a thermal fading scheme comprises an optical switch, an isolator (1), a wavelength division multiplexer (WDM), an erbium-doped fiber, a filter, an isolator (2), a beam splitter, a control system, a resistive heater, and a 980nm laser. The control system includes an optical power detector and a logic processing circuit. The optical switch, isolator (1), WDM, erbium-doped fiber, filter, isolator (2), beam splitter, and control system are connected in sequence. An external optical signal is fed through the optical switch to provide input light. 1% of the beam splitter's output is transmitted to the optical power detector, which is then connected to the logic processing circuit. The output of the logic processing circuit is connected to a 1×1 electrically controlled optical switch, a 980nm laser, and a resistive heater. The 980nm laser is connected to the WDM, and the resistive heater is connected to the erbium-doped fiber.

[0069] like Figure 4 As shown, a radiation-resistant device for an erbium-doped fiber amplifier is disclosed, comprising: an optical switch, an isolator 1, a wavelength division multiplexer, an erbium-doped fiber, a filter, an isolator 2, a beam splitter, a control system, a resistive heater, and a 980nm laser. The control system includes an optical power detector and a logic processing circuit.

[0070] The optical switch, isolator 1, wavelength division multiplexer, erbium-doped fiber, filter, isolator 2, beam splitter, and control system are connected in sequence. 1% of the beam splitter output is transmitted to an optical power detector, which is connected to a logic processing circuit. The output of the logic processing circuit is connected to a 1×1 electrically controlled optical switch, a 980nm laser, and a resistive heater. The 980nm laser is connected to the wavelength division multiplexer, and the resistive heater is connected to the erbium-doped fiber.

[0071] When the radiation protection device is operating, the control system monitors the EDFA's output optical power to determine whether it falls below a pre-stored minimum optical power threshold, and then uses feedback control to activate the thermal fading device. When the EDFA's output performance remains above the minimum requirement, the original EDFA system remains unchanged. That is, when the EDFA system is functioning normally, the entire system remains unchanged. When the EDFA's output power drops below a threshold, the control system sends a signal to shut down the optical switch and related circuits. Based on the current radiation parameters, the anti-radiation fading model is input to determine the fading parameters, including the output thermal power of the resistive heater, and thermal fading treatment is performed on the optical fiber. The optical power detector continues to monitor the optical power changes at the output end in real time and transmits the data to the control system, which evaluates the EDFA's performance recovery based on the monitoring data. If the performance recovers above the preset threshold, the optical switch and related circuits are activated, and the EDFA system returns to normal operation and continues to operate as before.

[0072] Example 2

[0073] This embodiment discloses a specific implementation of radiation resistance of an erbium-doped fiber amplifier using the optical fading effect, which is described in detail as follows.

[0074] An erbium-doped fiber amplifier radiation-resistant device based on an optical fading scheme comprises an optical switch, an isolator (1), a wavelength division multiplexer (WDM), an erbium-doped fiber, a filter, an isolator (2), a beam splitter, a control system, and a 980nm laser. The control system includes an optical power detector and a logic processing circuit. The optical switch, isolator (1), WDM, erbium-doped fiber, filter, isolator (2), beam splitter, and control system are connected in sequence. An external optical signal is fed through the optical switch to provide input light. 1% of the beam splitter's output is transmitted to the optical power detector, which is then connected to the logic processing circuit. The output of the logic processing circuit is connected to a 1×1 electrically controlled optical switch and a 980nm laser. The 980nm laser is then connected to the WDM.

[0075] like Figure 5 As shown, a radiation-resistant device for an erbium-doped fiber amplifier is disclosed, comprising: an optical switch, an isolator 1, a wavelength division multiplexer, an erbium-doped fiber, a filter, an isolator 2, a beam splitter, a control system, and a 980nm laser. The control system includes an optical power detector and a logic processing circuit. The 1550nm laser, the optical switch, the isolator 1, the wavelength division multiplexer, the erbium-doped fiber, the filter, the isolator 2, the beam splitter, and the control system are connected in sequence. 1% of the beam splitter output is transmitted to the optical power detector, which is connected to the logic processing circuit. The output of the logic processing circuit is connected to a 1×1 electrically controlled optical switch and a 980nm laser, which is then connected to the wavelength division multiplexer.

[0076] When the radiation-hardening device is operating, the control system monitors the EDFA's output optical power to determine whether it falls below a pre-stored minimum optical power threshold, and then uses feedback to control whether the optical fade mechanism is activated. When the EDFA's output performance remains above the minimum requirement, the EDFA system remains unchanged. That is, when the EDFA system is functioning normally, the entire system remains unchanged. When the EDFA's output power drops below a threshold, the control system signals the optical switch and related circuits, switching the 980nm semiconductor laser from pumping mode to active fade mode. The radiation-hardening fade model, based on current radiation parameters, determines the fade parameters. The 980nm semiconductor laser's output pump light is adjusted accordingly, and strong pump power is injected into the EDFA optical path, causing intermittent, short-term optical fade treatment of the optical fiber. The optical power detector continuously monitors the output optical power changes in real time and transmits the data to the control system, which uses the monitoring data to assess the EDFA's performance recovery. If the performance recovers to above the preset threshold, the 980nm semiconductor laser is restored to the pumping working state, the optical switch and related circuits are started, and the EDFA system returns to the normal working mode and continues to operate in the original manner.

[0077] Although the specific embodiments of the present invention have been described in a particular order, it should be understood that such actions or steps are required to be performed in the particular order shown or in a sequential order, or that all illustrated actions or steps are required to be performed to obtain the desired result. Under certain circumstances, multitasking and parallel processing may be advantageous. Similarly, although some specific implementation details have been included in the above discussion, these should not be construed as limiting the scope of the present disclosure. Some features described in the context of a separate embodiment can also be implemented in a single implementation in combination. On the contrary, the various features described in the context of a single implementation can also be implemented in multiple implementations individually or in any suitable sub-combination.

[0078] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by any technician familiar with this technical field within the technical scope disclosed by the present invention should be covered by the scope of protection of the present invention.

Claims

1. An anti-radiation device for an erbium-doped fiber amplifier based on active fading, characterized in that: The optical switch comprises an isolator, an erbium-doped fiber amplifier, a beam splitter, a detector and a processing circuit; the erbium-doped fiber amplifier is provided with a pump source; the optical switch, isolator, erbium-doped fiber amplifier and beam splitter are connected in sequence, one beam output by the beam splitter is connected to the detector, the detector is connected to the processing circuit, and the processing circuit is respectively connected to the optical switch and the pump source.

2. A radiation-resistant method for an erbium-doped fiber amplifier radiation-resistant device based on active fading according to claim 1, characterized in that: The following steps are involved: Step S1, performing irradiation experiments and fading experiments on an erbium-doped fiber amplifier, and obtaining an anti-radiation fading model of the erbium-doped fiber amplifier based on the experimental data, wherein the anti-radiation fading model can obtain fading parameters according to radiation parameters; Step S2: The detector obtains the output optical power of the erbium-doped fiber amplifier and determines whether the output optical power is lower than a preset threshold; Step S3: When the output optical power is lower than the preset threshold, turning off the optical switch; Inputting the anti-radiation fading model based on current radiation parameters to determine fading parameters; Step S4: performing fading processing on the erbium-doped fiber based on the determined fading parameters; the detector obtains the output optical power of the erbium-doped fiber amplifier after the fading processing; Step S5, returning to step S4, stopping the fading process until the output optical power after the fading process is greater than the preset threshold, turning on the optical switch, and completing the active fading anti-radiation process.

3. The radiation-resistant method of the active-fading erbium-doped fiber amplifier radiation-resistant device according to claim 2, characterized in that: Step S1 specifically includes: Step S1-1, performing an irradiation experiment on the erbium-doped fiber amplifier, obtaining the output optical power of the erbium-doped fiber amplifier corresponding to each radiation parameter by adjusting the radiation parameters, wherein the radiation parameters include the ambient radiation dose rate and the total radiation dose, and establishing a first lookup table recording the correspondence between the radiation parameters and the output optical power; Step S1-2, performing an active fading simulation experiment on the erbium-doped fiber amplifier, and obtaining the corresponding output optical power of the erbium-doped fiber amplifier by adjusting the fading parameters; the fading parameters include the fading optical power, the optical fading time, the fading heating power, and the thermal fading time; and establishing a second lookup table recording the correspondence between the output optical power and the fading parameters; Step S1-3: Correlate the output optical powers of the first lookup table and the second lookup table to determine the anti-radiation fading model.

4. The radiation-resistant method of the active-fading erbium-doped fiber amplifier radiation-resistant device according to claim 3, characterized in that: Step S4 specifically includes: Based on the determined faded optical power and light fade time in the fade parameters, the processing circuit controls the pump source, and uses the pump source to send pump laser to the erbium-doped fiber amplifier to perform fade processing on the erbium-doped fiber.

5. The radiation-resistant method of the active-fading erbium-doped fiber amplifier radiation-resistant device according to claim 3, characterized in that: The anti-radiation device further comprises a resistance heating plate, which is connected to the processing circuit and the erbium-doped fiber amplifier respectively; Step S4 specifically includes: Based on the determined fading heating power and thermal fading time in the fading parameters, the processing circuit controls the resistance heating plate to perform fading processing on the erbium-doped optical fiber.

6. The radiation-resistant method of the active-fading erbium-doped fiber amplifier radiation-resistant device according to any one of claims 4 or 5, characterized in that: The optical switch is a 1×1 electrically controlled optical switch, and the pump source is a 980nm laser.

7. The radiation-resistant method of the active-fading erbium-doped fiber amplifier radiation-resistant device according to claim 6, characterized in that: The beam splitter is a 1×2 beam splitter having a 99% output end and a 1% output end, and the 1% output end is connected to the detector.

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