Atomic beam tube device and atomic beam clock system

Abstract

The invention provides an atomic beam tube device and an atomic beam clock system.The atomic beam tube device is of a closed cavity structure composed of a first base layer, a second base layer and a third base layer which are arranged in a stacked mode, the closed cavity structure comprises a beam source area, a collimation channel and a beam drift area which are sequentially communicated, and the first base layer and the third base layer are glass layers; the second base layer is a silicon layer. According to the atomic beam tube device disclosed by the embodiment of the invention, reverse voltage de-bonding of a silicon and glass interface is avoided, high air tightness of the micro vacuum cavity is realized, and the stability of the atomic beam tube is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of vacuum electronic devices, and in particular to an atomic beam tube device and an atomic beam clock system. Background Art

[0002] An atomic clock is an advanced clock that uses atomic resonance frequency standards to calculate and maintain accurate time. It is the most accurate time measurement and frequency standard known in the world, and the benchmark for international time and frequency conversion. It is widely used in positioning, navigation, timing (PNT), and communications.

[0003] There are many types of atomic clocks. Traditional microwave atomic clocks have moderate accuracy and a frequency stability of up to 10 -12 The above are primarily used for timekeeping / timing of PNT master nodes. Large-volume optical atomic clocks offer high precision and are primarily targeted at the forefront of science, challenging the limits of physical measurement and addressing the next-generation definition of the second. However, with the increase in communication speeds and the development of inertial navigation and quantum sensor networks, the demand for miniaturized, integrated, low-power chip-scale atomic clocks continues to rise. Applications such as satellite gravity detection, mobile communications, underwater navigation, and drone swarms all require atomic clocks with sufficiently low power consumption and small physical size, requirements that the above-mentioned atomic clocks cannot meet.

[0004] Coherent Population Trapping (CPT) atomic clocks are a research hotspot in the field of small atomic clocks. In principle, they do not require the microwave cavity used in traditional atomic clocks, and their size is not limited by microwave wavelengths. The core components of CPT atomic clocks are implemented using Micro-Electro-Mechanical Systems (MEMS) technology, which enables atomic clocks to be chip-based. CPT chip clocks have been commercialized and have largely solved the application needs of quantum precision measurement. However, in principle, the long-term stability of CPT atomic clocks is far inferior to short-term operation. In 1000 seconds, CPT chip clocks can achieve 10 -10 -10 -11 However, with the ambient temperature drift, light changes and other systematic factors, it is easy to become unstable over 1000 seconds, and the average monthly frequency stability will be reduced by 1-2 orders of magnitude.

[0005] In related technologies, the physical core of a miniaturized microwave atomic clock usually uses a five-layer atomic beam tube prepared at the chip level, such as Figure 1 The key to chip-scale atomic beam tube fabrication is to convert the three-dimensional structure into a two-dimensional and a half structure compatible with MEMS technology based on proportional reduction of size. However, the frequency stability of this miniaturized microwave atomic clock is only 1.2×10 -9 , and did not meet expectations.

[0006] Therefore, an atomic beam tube and an atomic counting clock system with high airtightness are needed. Summary of the Invention

[0007] In order to solve at least one of the above problems, the present disclosure provides an atomic beam tube device, which comprises a first base layer, a second base layer, and a third base layer stacked to form a closed cavity structure.

[0008] The closed cavity structure includes a beam source region, a collimation channel and a beam drift region which are connected in sequence, and

[0009] The first and third base layers are glass layers, and the second base layer is a silicon layer.

[0010] Optionally, the second base layer includes: a first through hole, a second through hole, and a first isolation region disposed between the first through hole and the second through hole.

[0011] At least one first channel is provided on a side of the first isolation region close to the third base layer.

[0012] The first channel communicates with the first through hole and the second through hole.

[0013] Optionally, the surface of the first base layer close to the second base layer is a plane without an opening.

[0014] The third base layer includes: a first groove, a second groove and a second isolation region arranged between the first groove and the second groove,

[0015] The first slot is arranged corresponding to the first through hole, the second slot is arranged corresponding to the second through hole, and the second isolation region covers the first isolation region.

[0016] Optionally, the orthographic projection of the first through hole on the first base layer overlaps with the orthographic projection of the first slot on the first base layer.

[0017] An orthographic projection of the second through hole on the first base layer overlaps with an orthographic projection of the second groove on the first base layer.

[0018] Optionally, the second base layer includes a plurality of first channels, and the cross section of the first channel in a direction perpendicular to the first base layer is square.

[0019] The plurality of first channels are arranged symmetrically with respect to a first axis, the first axis extends from the first through hole to the second through hole, and each of the first through hole and the second through hole is a symmetrical hole symmetrical with respect to the first axis.

[0020] Optionally, the depths of the first groove and the second groove are h1, the depth of the first channel is h2, and the thickness of the second base layer is h3, wherein h3=h1+h2.

[0021] Optionally, the first base layer and the second base layer are bonded together, and the second base layer and the third base layer are bonded together; and / or

[0022] The length of the beam drift region in a direction away from the collimation channel is greater than or equal to 15 mm and less than or equal to 20 mm.

[0023] Optionally, the second through hole includes two first opening areas defined by the first defining area and two second opening areas defined by the second defining area.

[0024] The two first opening areas are symmetrically arranged relative to the first axis, and the two second opening areas are symmetrically arranged relative to the first axis.

[0025] Optionally, the first opening area is provided with a first alkali metal adsorbent, and the second opening area is provided with a getter.

[0026] A second alkali metal adsorbent is accommodated between the getter and the sidewall of the second substrate away from the beam source region.

[0027] A second aspect of the present disclosure provides an atomic beam clock system, comprising the atomic beam tube device as described above.

[0028] The beneficial effects of the present disclosure are as follows:

[0029] In response to the current existing problems, the present disclosure develops an atomic beam tube device and an atomic beam clock system. By providing a closed cavity structure composed of three stacked base layers, and the second base layer is a silicon layer, the atomic beam tube device does not have a silicon-glass-silicon stacked structure, avoiding the reverse voltage debonding state of the interface during the process, greatly improving the airtightness and frequency stability of the atomic beam device, and has broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0031] Figure 1 A schematic diagram of an atomic beam tube device in related art is shown;

[0032] Figure 2 FIG2 shows a schematic exploded view of an atomic beam tube device according to an embodiment of the present disclosure;

[0033] Figure 3 A schematic cross-sectional view of an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0034] Figure 4A schematic top view of a first base layer in an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0035] Figure 5 FIG. 1 is a schematic top view showing a second substrate in an atomic beam tube device according to an embodiment of the present disclosure;

[0036] Figure 6 The first isolation region along the second substrate of the atomic beam tube device according to an embodiment of the present disclosure is shown. Figure 3 A schematic diagram of a cross section taken along the Z direction;

[0037] Figure 7 A top view showing at least a portion of a first isolation region in a second base layer of an atomic beam tube device according to another embodiment of the present disclosure;

[0038] Figure 8 A schematic top view of an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0039] Figure 9 A schematic top view of a third base layer in an atomic beam tube device according to an embodiment of the present disclosure is shown;

[0040] Figure 10 A schematic cross-sectional view showing a third base layer in an atomic beam tube device according to an embodiment of the present disclosure;

[0041] Figure 11 The atomic beam tube device according to the embodiment of the present disclosure is shown along Figure 3 Schematic diagram of a cross section taken in the Z direction. DETAILED DESCRIPTION

[0042] To more clearly illustrate the present disclosure, the present disclosure is further described below in conjunction with preferred embodiments and accompanying drawings. Similar components in the accompanying drawings are represented by the same reference numerals. Those skilled in the art should understand that the specific description below is illustrative rather than restrictive and should not be used to limit the scope of protection of the present disclosure.

[0043] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. "First", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, "one", "an" or "the" and similar words do not indicate a quantity limitation, but rather indicate the existence of at least one. "Include" or "comprising" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

[0044] In this disclosure, "electrically connected" includes components connected together via an element having some electrical function. There are no particular limitations on the "element having some electrical function" as long as it enables the transfer of electrical signals between the connected components. Examples of "element having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0045] As used in this disclosure, "parallel," "perpendicular," and "equal" include the stated conditions and conditions that are similar to the stated conditions, within an acceptable range of deviations as determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "equal" includes both absolute equality and approximate equality, where the acceptable range of deviations for approximate equality may include, for example, a difference between two conditions that is less than or equal to 5% of either condition.

[0046] The inventors have found that in the related technical structure, each area of ​​the atomic beam tube is realized by photolithography and etching. The atomic beam tube includes at least 5 layers of structure, and the adjacent layers are made of different materials to increase the strength. The top and bottom layers are flat plates, and each of the multiple film layers in the middle is a through-sheet. This method is a common choice for chip-level atomic beam tube preparation because it only needs to consider the position and shape of the openings. Figure 1The device shown includes a glass layer 11, a silicon layer 12, a glass layer 13, a silicon layer 14 and a glass layer 15 in sequence. Except for the glass layer 11 and the glass layer 15, which are flat structures, each of the intermediate layers is a through-pattern. The complex five-layer structure has four bonding interfaces, and the four bonding interfaces must have a silicon-glass-silicon packaging structure. From a process perspective, bonding is a strong bonding effect formed under certain temperature and voltage conditions. The silicon-glass-silicon structure causes one silicon-glass interface to be bonded based on a voltage in one direction while the other silicon and glass interface is in a reverse voltage debonding state. This results in an interface separation problem caused by reverse voltage debonding, which affects the airtightness of the microcavity structure finally formed. On the other hand, the more film layers there are, the higher the leakage rate of the bonding interface will be.

[0047] Therefore, the current atomic beam tube structure based on MEMS technology has poor airtightness, unstable internal environment and poor frequency stability.

[0048] In view of this, an embodiment of the present disclosure provides an atomic beam tube device, wherein the atomic beam tube device is composed of a first base layer, a second base layer, and a third base layer stacked to form a closed cavity structure, wherein the closed cavity structure includes a beam source region, a collimation channel, and a beam drift region connected in sequence, and

[0049] The first and third base layers are glass layers, and the second base layer is a silicon layer.

[0050] In this embodiment, a closed cavity structure consisting of three stacked base layers is provided, and the second base layer is a silicon layer, so that the atomic beam tube device does not have a silicon-glass-silicon stacked structure, thereby avoiding the reverse voltage debonding state of the interface during the process, and greatly improving the airtightness and frequency stability of the atomic beam device.

[0051] In a specific example, refer to Figure 2 and Figure 3 As shown, the atomic beam tube device 2 includes a first base layer 21, a second base layer 22, and a third base layer 23 stacked in sequence, which form a closed cavity structure. The closed cavity structure includes a beam source region 20-1, a collimation channel 20-2, and a beam drift region 20-3 that are connected in sequence.

[0052] The first and third substrates 21, 23 are glass layers, and the second substrate 22 is a silicon layer. The first substrate 21 can serve as a base plate, and the third substrate 23 can serve as a cover plate. The first and second substrates 21, 22 can be bonded together by covalent bonds, and the third and second substrates 23, 22 can be bonded together by covalent bonds.

[0053] That is to say, the first base layer 21, the second base layer 22 and the third base layer 23 are encapsulated into a closed cavity structure by covalent bonds, and the pattern of the first base layer 21, the second base layer 22 and the third base layer 23 is used to form a closed cavity structure. Figure 2 The beam source region 20 - 1 , the collimating channel 20 - 2 and the beam drift region 20 - 3 are sequentially connected in the X direction, thereby forming an atomic beam tube device.

[0054] The above arrangement utilizes a first base layer 21 and a third base layer 23 of glass material, and a second base layer 22 of silicon material to stack to form a closed cavity structure. While achieving the structural functions of the micro-atomic beam tube device, there is no silicon-glass-silicon film layer combination relationship, thereby completely solving the problem of insufficient airtightness caused by reverse voltage debonding, and ensuring the sealing and frequency stability of the micro-atomic beam tube device.

[0055] Specifically, refer to Figure 4 As shown, the first substrate 21 is a flat plate structure, and the surface of the first substrate 21 close to the first substrate 22 is a plane without openings. In other words, the first substrate 21 is a complete glass plate without pattern.

[0056] Reference Figure 5 As shown, the second base layer 22 includes: a first through hole TK1, a second through hole TK2 and a first isolation region 221 disposed between the first through hole TK1 and the second through hole TK2. A plurality of first channels 222 are disposed on one side of the first isolation region 221 close to the third base layer 23, as shown in FIG. Figure 5 As shown, the first channel 222 communicates with the first through hole TK1 and the second through hole TK2 .

[0057] The orthographic projection of each of the first through hole TK1, the second through hole TK2 and the first channel 222 on the first substrate 21, that is, the orthographic projection pattern in the direction Y perpendicular to the first substrate 21, is the same as the orthographic projection pattern of the beam source region 20-1, the collimating channel 20-2 and the beam drift region 20-3 to be formed on the first substrate 21.

[0058] It can be seen that the first channel 222 is used to form a collimating channel connecting the beam source region 20 - 1 and the beam drift region 20 - 3 .

[0059] It should be noted that although Figure 5 It is shown that a plurality of first channels 222 are formed in the first isolation region 221 , but the present disclosure is not limited thereto. Under the condition of meeting product design requirements, there can be one or more first channels 222 , and the specific number is determined according to needs.

[0060] Combine Figure 5 and Figure 6As shown, the cross-section of the first channel 222 in a direction perpendicular to the first base layer 21 is square. That is, if the depth of the first channel 222 in a direction Y perpendicular to the first base layer 21 is represented by h2, and the width in a direction Z parallel to the surface of the first base layer 21 is represented by w1, then w1 = h2, and the direction Z is perpendicular to the direction X.

[0061] By setting the cross section of the first channel 222 in a direction perpendicular to the first base layer 21 to be a square, it can be ensured that the atomic beam is subjected to balanced forces in all directions when passing through the collimation channel.

[0062] Optionally, the ratio of the length L1 of the first channel 222 to the cross-sectional side length w1 of the first channel 222 in a direction perpendicular to the first substrate 21 is greater than or equal to 30:1, which can provide a sufficiently narrow collimation channel. Thus, the collimation channel formed by the first channel 222 can form a well-collimated atomic beam during the passage. It should be noted that the length of the first channel 222 is the distance in the direction from the first through hole TK1 to the second through hole TK2.

[0063] For example, although Figure 6 The spacing between the first channels 222 is shown to be substantially equal to the width w1 thereof, but this is not intended to be limiting. Figure 5 As shown, the spacing w2 between the first channels 222 may be half of the width w1, that is, the spacing w2 between adjacent first channels 222 may be 0.05 mm, thereby forming a first channel group with a more concentrated distribution, which is conducive to forming a well-collimated atomic beam.

[0064] Optionally, the plurality of first channels are symmetrically arranged relative to a first axis, the first axis being the axis of symmetry of the first through hole and the second through hole. In the embodiment of the present disclosure, the plurality of first channels are symmetrically arranged relative to the first axis, indicating that the overall layout of the plurality of first channels is symmetrical relative to the first axis.

[0065] Reference Figure 5 As shown, the first axis extends from the first through hole TK1 to the second through hole TK2, i.e., the X direction in the figure, and each of the first through hole TK1 and the second through hole TK2 is a symmetrical hole symmetrical with respect to the first axis OO'. In this example, the number of first channels 222 is odd, the central axis of a spaced region of the first channel TK1 coincides with the first axis OO', and an equal number of first channels 222 are arranged on either side of the first axis OO'. However, the symmetrical arrangement with respect to the first axis of the present disclosure is not limited to this example.

[0066] In another case where the embodiment of the present disclosure is satisfied, refer to Figure 7As shown, the number of first channels is an even number, the first axis coincides with the central axis of one of the first channels, and the same number of first channels are arranged on both sides of the first channel.

[0067] It should be noted that the above layouts in which the number of first channels is odd or even fall under the protection of the above-mentioned “multiple first channels are symmetrically arranged relative to the first axis”.

[0068] By setting the arrangement of the first channel to be symmetrical with respect to the first axis serving as the axis of symmetry of the first through hole and the second through hole, it is possible to ensure that the adsorption force received by the source material in the formed beam source region at the collimation channel is uniform in all directions, thereby improving the collimation rate of the atomic beam.

[0069] Continue to refer to Figure 5 As shown, one end of the second through hole TK2 is connected to the first channel 222, thereby forming a through hole from the first through hole TK1, the first channel 222, to the second through hole TK2. The second through hole TK2 is used to form a closed area with the third base layer 23 to constitute the beam drift region. To effectively vacuum the source material and ensure sufficient drift length for the atomic beam while maintaining a miniaturized structure, the length L2 of the second through hole TK2 in the direction X away from the collimation channel (i.e., away from the first channel 222) should be greater than or equal to 15 mm and less than or equal to 20 mm.

[0070] Combine Figure 5 and Figure 8 As shown, Figure 8 The top view of the atomic beam tube device is shown in FIG. 2 , because the top view patterns of the beam source region 20 - 1 , the collimating channel 20 - 2 and the beam drift region 20 - 3 are consistent with the top view patterns of the first through hole TK1 , the first channel 222 and the second through hole TK2 , so the top view patterns of the atomic beam tube device are shown in FIG. 2 . Figure 8 Understand the specific structure and function of the second through hole TK2 in the second base layer 22.

[0071] Reference Figure 5 and Figure 8 As shown, the second through hole TK2 includes two first opening areas TK2-1 defined by the first limiting area 223 and two second opening areas TK2-2 defined by the second limiting area 224. The two first opening areas TK2-1 are symmetrically arranged relative to the first axis OO', and the two second opening areas TK2-2 are symmetrically arranged relative to the first axis OO'.

[0072] It should be understood that Figure 5For the sake of convenience, only the first limiting area 223, the second limiting area 224 and the first opening area TK2-1 and the second opening area TK2-2 defined by each on one side of the first axis OO' are shown. Those skilled in the art should understand that the unmarked parts at the symmetrical positions on the other side of the first axis OO' are also the corresponding first limiting areas 223, the second limiting areas 224 and the first opening areas TK2-1 and the second opening areas TK2-2 defined by each, which are not elaborated in this article.

[0073] A first alkali metal adsorbent 26-1 is disposed in the first opening region TK2-1 defined by the first limiting region 223, and a getter 25 is disposed in the second opening region TK2-2. A second alkali metal adsorbent 26-2 is accommodated between the getter 25 and the sidewall of the second substrate 22 away from the beam source region 20-3. Of course, a source material, such as an alkali metal source, is correspondingly disposed in the first through hole TK1.

[0074] from Figure 8 It can be seen that the first opening area TK2-1 defined by the first limiting area 223 can accommodate the first alkali metal adsorbent 26-1, and the second opening area TK2-2 defined by the second limiting area 224 can accommodate the getter 25, and the getter 25 can also be used to limit the second alkali metal adsorbent 26-2.

[0075] Optionally, the first alkali metal adsorbent 26 - 1 and the second alkali metal adsorbent 26 - 2 are the same alkali metal adsorbent material. Of course, the present disclosure is not limited thereto. If design requirements are met, the first alkali metal adsorbent 26 - 1 and the second alkali metal adsorbent 26 - 2 can also be different alkali metal adsorbent materials.

[0076] The getter 25 in the beam drift region 20-3 is used to create a vacuum difference between the beam source region 20-1 and the beam drift region 20-3, so as to encourage the atoms generated by the alkali metal source in the beam source region 20-1 to enter the drift region 20-3 through the collimation channel 20-2. The first alkali metal adsorbent 26-1 and the second alkali metal adsorbent 26-2 are used to adsorb the residual alkali metal atoms in the beam drift region 20-3.

[0077] In order to ensure that the vacuum difference formed is large enough and that the residual alkali metal atoms can be fully adsorbed to ensure the cleanliness of the cavity of the beam drift region 20-3, the length of the second through hole TK2 along the extension direction of the first axis OO', or in other words, along the direction X away from the collimation channel 20-2 should be greater than or equal to 15 mm and less than or equal to 20 mm.

[0078] Reference Figure 9 and Figure 10 As shown, the third base layer 23 includes a first groove 231 , a second groove 232 and a second isolation region 233 disposed between the first groove 231 and the second groove 232 .

[0079] Combine Figure 9 and Figure 3 As shown, the first slot 231 is provided corresponding to the first through hole TK1 , the second slot 232 is provided corresponding to the second through hole TK2 , and the second isolation region 233 covers the first isolation region 221 .

[0080] Specifically, the orthographic projection of the first through hole TK1 on the first base layer 21 overlaps with the orthographic projection of the first groove 231 on the first base layer, and the orthographic projection of the second through hole TK2 on the first base layer 21 overlaps with the orthographic projection of the second groove 232 on the first base layer 21 .

[0081] That is, the first through hole TK1 of the second base layer 22, the first groove 231 of the third base layer 23, and the surface of the first base layer 21 close to the second base layer 22 together form the beam source region 20-1 of the atomic beam tube device, and the second through hole TK2 of the second base layer 22, the second groove 232 of the third base layer 23, and the surface of the first base layer 21 close to the second base layer 22 together form the beam drift region 20-3 of the atomic beam tube device. Figure 10 and Figure 11 As shown, the first channel 222 and the second isolation region 233 together form a collimating channel 20 - 2 .

[0082] Optionally, refer to Figure 11 As shown, the depths of the first slot 231 and the second slot 232 are h1, the depth of the first channel 222 is h2, and the thickness of the second base layer 22 is h3, wherein h3=h1+h2.

[0083] It should be noted that Figure 11 is Figure 3 A cross-sectional view taken along the Z direction of the first isolation region 221 and the second isolation region 233, Figure 11 The dotted box in the middle indicates the positions of the beam source region 20 - 1 and the beam drift region 20 - 3 formed on the interface.

[0084] This arrangement ensures that the collimating channel 20 - 2 formed by the first channel 222 is located in the center of the entire cavity structure in a direction perpendicular to the first substrate 21 , thereby enabling the atomic beam to form a collimated atomic beam with balanced force.

[0085] The inventors have conducted actual tests and found that the leakage rate of the atomic beam tube device with a cavity structure in the embodiment of the present disclosure is better than 1×10 -13 Pa·m 3 / s, while the atomic beam tube device with silicon-glass-silicon interface in the related art has not yet seen a leakage rate better than 1×10 -11 Pa·m 3The airtightness of the micro vacuum chamber of the atomic beam tube device of the embodiment of the present disclosure is at least 2 orders of magnitude better than that of the related art structure.

[0086] It can be seen that the atomic beam tube structure of the embodiment of the present invention avoids the silicon-glass-silicon structure in the MEMS-based chip-level atomic beam tube device, fundamentally eliminates the problem of reverse voltage decoupling at the silicon-glass interface, and achieves high airtightness of the micro vacuum cavity.

[0087] Based on the same inventive concept, embodiments of the present disclosure further provide an atomic beam clock system, including the atomic beam tube device described in the above embodiments. The atomic beam clock system may be a MEMS-based chip-scale micro atomic beam clock system, which is not limited in this embodiment.

[0088] The atomic beam tube device included in the above atomic beam clock system and the specific structure and function of the atomic beam tube device have been described in detail in the above embodiments and will not be repeated here.

[0089] By providing an atomic beam clock system with the above atomic beam tube devices, a miniature atomic beam clock system with low power consumption, small physical size, simple process manufacturing, high airtightness and frequency stability can be realized, thereby meeting various high-integration, high-precision and stable application requirements and having broad application prospects.

[0090] Obviously, the above embodiments of the present disclosure are merely examples for clearly illustrating the present disclosure, and are not intended to limit the implementation methods of the present disclosure. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is impossible to list all the implementation methods here. All obvious changes or modifications derived from the technical solutions of the present disclosure are still within the scope of protection of the present disclosure.

Claims

1. An atomic beam tube device, characterized in that: The atomic beam tube device is composed of a first base layer, a second base layer, and a third base layer which are stacked to form a closed cavity structure. The closed cavity structure includes a beam source region, a collimation channel and a beam drift region which are connected in sequence, and The first base layer and the third base layer are glass layers, and the second base layer is a silicon layer.

2. The atomic beam tube device according to claim 1, characterized in that: The second base layer includes: a first through hole, a second through hole, and a first isolation region disposed between the first through hole and the second through hole. At least one first channel is provided on a side of the first isolation region close to the third base layer. The first channel communicates with the first through hole and the second through hole.

3. The atomic beam tube device according to claim 2, characterized in that: The surface of the first base layer close to the second base layer is a plane that does not include an opening. The third base layer includes: a first groove, a second groove, and a second isolation region disposed between the first groove and the second groove. The first slot is arranged corresponding to the first through hole, the second slot is arranged corresponding to the second through hole, and the second isolation region covers the first isolation region.

4. The atomic beam tube device according to claim 3, characterized in that: The orthographic projection of the first through hole on the first base layer overlaps with the orthographic projection of the first groove on the first base layer, An orthographic projection of the second through hole on the first base layer overlaps with an orthographic projection of the second groove on the first base layer.

5. The atomic beam tube device according to claim 2, characterized in that: The second base layer includes a plurality of the first channels, and the cross section of the first channels in a direction perpendicular to the first base layer is square. The plurality of first channels are arranged symmetrically with respect to a first axis, the first axis extends from the first through hole to the second through hole, and each of the first through hole and the second through hole is a symmetrical hole symmetrical with respect to the first axis.

6. The atomic beam tube device according to claim 5, characterized in that: The depths of the first groove and the second groove are h1, the depth of the first channel is h2, and the thickness of the second base layer is h3, wherein h3=h1+h2.

7. The atomic beam tube device according to claim 1, characterized in that: The first base layer and the second base layer are bonded together, and the second base layer and the third base layer are bonded together; and / or The length of the beam drift region in a direction away from the collimating channel is greater than or equal to 15 mm and less than or equal to 20 mm.

8. The atomic beam tube device according to claim 5, characterized in that: The second through hole includes two first opening areas defined by the first defining area and two second opening areas defined by the second defining area. The two first opening areas are symmetrically arranged relative to the first axis, and the two second opening areas are symmetrically arranged relative to the first axis.

9. The atomic beam tube device according to claim 8, characterized in that: The first opening area is provided with a first alkali metal adsorbent, and the second opening area is provided with a getter. A second alkali metal adsorbent is accommodated between the getter and a sidewall of the second base layer away from the beam source region.

10. An atomic beam clock system, characterized in that: The atomic beam tube device comprises the atomic beam tube device according to any one of claims 1 to 9.

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