Radio frequency chip integrated with junction temperature thermal control function

Abstract

The invention discloses a radio frequency chip integrated with a junction temperature thermal control function, and relates to the technical field of radio frequency chips. The system comprises a temperature unit, an active heat dissipation unit, a trigger switch, a power supply module and a chip main body, the chip main body comprises a controller, a transmit-receive unit, a power amplifier, a filter and a temperature control unit, and the temperature unit comprises a first temperature sensor and a second temperature sensor. The output end of the first temperature sensor and the output end of the second temperature sensor are both connected with the input end of the controller, the output end of the power module is connected with the input end of the controller and the input end of the trigger switch, and the output end of the trigger switch is connected with the input end of the controller. Junction temperature integral and aging coefficient models are respectively introduced, adaptive adjustment of power and bandwidth is realized, pseudo soldering of the radio frequency chip is avoided by adding a trigger switch and an active heat dissipation unit and designing aging compensation, and the working stability of the radio frequency chip is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of radio frequency chips, and in particular to a radio frequency chip with integrated junction temperature thermal control function. Background Art

[0002] RF chips are at the heart of wireless communications, and their temperature directly impacts performance (such as gain and noise figure) and reliability (such as solder joint defects and aging). Traditional temperature control relies on real-time temperature thresholds and uses PID control of power amplifiers and filters, focusing on energy efficiency or short-term stability. However, in mobile scenarios (such as 5G and automotive), chips face dynamic loads, limited heat dissipation, and long-term aging, requiring more refined temperature control.

[0003] Existing technologies have introduced junction temperature integration and temperature difference analysis to quantify heat accumulation, but they are insufficient in multi-stage control, aging perception and system coordination, making it difficult to cope with complex working conditions. The temperature control mode is single and does not distinguish between energy efficiency and stability priorities. The performance or life contradiction is prominent under high temperatures. The nonlinear aging acceleration of heat accumulation is ignored, and only real-time adjustment is performed. Long-term reliability cannot be predicted. Heat dissipation and RF parameter adjustment are isolated, and there is a lack of system-level coordination. Therefore, designing an RF chip with integrated junction temperature thermal control function to improve the above defects is a technical problem that technical personnel in this field need to solve. Summary of the Invention

[0004] In view of the deficiencies in the prior art, the present invention provides a radio frequency chip with integrated junction temperature thermal control function, which solves the problems raised in the above background technology.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions: a radio frequency chip with integrated junction temperature thermal control function, comprising a temperature unit, an active heat dissipation unit, a trigger switch, a power module and a chip body, the chip body comprising a controller, a transceiver unit, a power amplifier, a filter and a temperature control unit, the temperature unit comprising a first temperature sensor and a second temperature sensor, the output ends of the first temperature sensor and the second temperature sensor are both connected to the input end of the controller, the output end of the power module is respectively connected to the input end of the controller and the trigger switch, the output end of the trigger switch is connected to the input end of the controller, when the output end of the trigger switch is disconnected from the input end of the controller, the output end of the trigger switch is connected to the input end of the active heat dissipation unit, the port of the controller establishes communication with the port of the transceiver unit, the output end of the transceiver controller unit is connected to the input end of the power amplifier, the output end of the filter is connected to the input end of the transceiver unit, the output end of the controller is connected to the input end of the temperature control unit, and the output end of the temperature control unit is respectively connected to the input ends of the power amplifier and the filter;

[0006] The first temperature sensor is used to obtain the first temperature inside the chip body and transmit it to the controller, and the second temperature sensor is used to obtain the second temperature outside the chip body and transmit it to the controller. The controller is used to analyze the first temperature and the second temperature to obtain a first temperature control scheme, and transmit the first temperature control scheme to the temperature control unit for execution. The first temperature control scheme is the temperature regulation of the RF chip under normal operation. This scheme mainly focuses on the energy efficiency of the RF chip. The application scenario of the RF chip is generally a mobile scenario, and the battery life of the mobile device itself needs to be considered. Therefore, the first temperature control scheme reduces the power consumption of the RF chip and its related electronic components as much as possible while ensuring stable data transmission and reception. The trigger switch disconnects from the controller when the temperature is out of control. The controller sets the chip body to be in the temperature warning stage. The trigger switch switches the power supply to the active heat dissipation unit at the beginning of the temperature warning stage. The active heat dissipation unit is in the temperature warning stage when the chip body is in the temperature warning stage It is used to drive the air flow on the surface of the chip body, and at the same time, the controller sends the second temperature control scheme to the temperature control unit for execution. The second temperature control scheme is the temperature regulation of the RF chip in the temperature warning stage. This scheme mainly focuses on the stability of the RF chip. Triggering the switch switching means that the temperature environment of the RF chip is relatively harsh. The risk of the RF chip being poorly soldered due to high temperature increases. Therefore, the second temperature control scheme enhances the heat dissipation ability of the RF chip as much as possible by adding an active heat dissipation unit. Although adding an active heat dissipation unit will increase power consumption to a certain extent, it can ensure the stability of the RF chip's receiving and sending data. The power module is used to power the controller and the active heat dissipation unit, and the transceiver unit is used for the chip body to send and receive data to the outside. The temperature control unit is used to execute the first temperature control scheme and the second temperature control scheme, adjust the power of the power amplifier and the bandwidth of the filter, the power amplifier is used to amplify the signal of sending data to the outside, and the filter is used to filter the signal of receiving data to the outside.

[0007] Furthermore, a solder point is provided in the controller, and the trigger switch includes a substrate and an elastic metal sheet, one end of the elastic metal sheet is fixed to one side of the substrate, and the other end of the elastic metal sheet is welded and fixed to the solder point, the substrate is fixed to one side of the chip body and is spaced a fixed distance from the controller, a boss is provided on the side of the substrate close to the controller, and a contact is provided on the side of the boss close to the controller, an end of the elastic metal sheet away from the solder point is electrically connected to the power module through the substrate, and one end of the contact is electrically connected to the substrate and the active heat dissipation unit in turn through the boss;

[0008] The solder joint material is lead solder, specifically the alloy Sn63 / Pb37. The soldering material used for the remaining pins of the controller is lead-free solder, specifically the Sn-Cu series alloy Sn-0.7Cu. The solder joint is the fuse trigger mechanism of the trigger switch. The melting point of the solder joint is lower than the soldering material used for the remaining pins of the controller. When the fuse trigger mechanism is triggered, the chip body is in the temperature warning stage, ensuring that the solder joint can melt under the fuse trigger mechanism, so that the elastic metal sheet is disconnected from the pin of the controller.

[0009] Furthermore, the specific process of the fuse triggering mechanism includes the following:

[0010] As the temperature of the chip body continues to rise to the melting point of the solder joint, the solder joint melts, the elastic metal sheet close to the controller is electrically disconnected from the controller, and the pin corresponding to the solder joint in the controller loses the electrical signal. The loss of the electrical signal indicates that the controller has received feedback that the elastic metal sheet is disconnected. The controller executes the temperature warning program, and the chip body enters the temperature warning stage.

[0011] After the elastic metal sheet is disconnected from the pin of the controller near one end of the soldering point, it is affected by the elastic potential energy generated by the elastic deformation of the elastic metal sheet itself. The elastic metal sheet is made of copper. As the temperature rises, the elastic modulus of copper will also increase. Therefore, copper as the material of the elastic metal sheet can meet the deformation and conductivity requirements of the elastic metal sheet under the fuse trigger mechanism. The role of the boss is to increase the height difference between the contact and the substrate. When the elastic metal sheet is disconnected from the soldering point and contacts the contact again, the elastic metal sheet still has a certain deformation amount. The stress generated by the deformation enables one end of the elastic metal sheet to be in close contact with the contact, avoiding poor contact between the elastic metal sheet and the contact. The end of the elastic metal sheet welded to the soldering point is in contact with the contact and electrically connected, and the power module completes the electrical connection with the active heat dissipation unit by triggering the switch.

[0012] Furthermore, obtaining the first temperature control solution specifically includes the following:

[0013] The controller obtains the first temperature T1 and the second temperature T2 from the first temperature sensor and the second temperature sensor respectively, and subtracts the second temperature from the first temperature to obtain the temperature difference ΔT. The controller uses the integral formula Calculate the temperature difference integral I of the chip body within time t ΔT (t), unit is (℃×S), temperature difference integral I ΔT (t) is the cumulative thermal resistance between the inside and outside of the chip body. The first temperature T1 and the second temperature T2 are both in degrees Celsius. The temperature difference integral I ΔT The larger the value of (t), the more heat is accumulated inside the chip body, and the worse the passive heat dissipation performance is. ΔT(t) Used to evaluate the stability of passive heat dissipation within the chip body and identify potential passive heat dissipation bottlenecks;

[0014] The controller sets the first threshold py1 and the second threshold py2, and the controller uses the formula Calculate the bottleneck index PJ of the passive heat dissipation of the chip body, where is the average temperature difference within time t, is the temperature difference integral I ΔT The rate of change of (t), the average temperature difference and the integral of the temperature difference I ΔT The unit of the rate of change of (t) is degrees Celsius;

[0015] When PJ < py1, it means that the passive heat dissipation performance inside the chip body meets the heat dissipation requirements, and there is no need to limit the power of the power amplifier and the bandwidth of the filter. The controller and the temperature control unit do not perform any operation. When py1 ≤ PJ < py2, it means that the passive heat dissipation performance inside the chip body is reduced, and the temperature control unit needs to adjust the power of the power amplifier and the bandwidth of the filter. The controller executes the first control process. When PJ ≥ py2, it means that the heat dissipation capacity inside the chip body has completely failed to meet the heat dissipation requirements. The temperature control unit needs to reduce the power of the power amplifier and the bandwidth of the filter to the maximum extent, and the controller executes the second control process.

[0016] Furthermore, when the first control process is executed, the controller is based on the temperature difference integral I ΔT (t) Establish the adjustment formula of the power amplifier, which is as follows:

[0017] p1 is the first power of the power amplifier after adjustment, in mW, p2 is the second power of the current power amplifier, in mW, K1 is the first adjustment coefficient, dimensionless, I ref is the integral of the first reference temperature difference, in units of (°C × S). The controller transmits the adjusted first power p1 to the temperature control unit, which adjusts the power amplifier according to the first power p1. When IΔT increases, the exponential function attenuates the power of the power amplifier to achieve nonlinear power limitation, avoiding insufficient response of linear control when the temperature inside the chip body is high;

[0018] The controller is based on the temperature difference integral I ΔT (t) Establish the filter adjustment formula, which is as follows:

[0019] bw1 is the first bandwidth of the adjusted filter, bw2 is the second bandwidth of the current filter, the units of the first bandwidth bw1 and the second bandwidth bw2 are both Hertz, K2 is the second adjustment coefficient, dimensionless, I refis the integral of the first reference temperature difference, in units of (°C×S). By narrowing the bandwidth of the filter, the signal processing complexity is reduced, and the power consumption of the filter and its related digital circuits is reduced. Linear control ensures sufficient signal bandwidth within a safe range. The controller sends the first bandwidth bw1 to the temperature control unit, and the temperature control unit adjusts the filter according to the first bandwidth bw1.

[0020] Furthermore, when the second control process is executed, the controller is based on the temperature difference integral I ΔT (t) Establish the adjustment formula of the power amplifier, which is as follows:

[0021] p3 is the third power of the power amplifier after adjustment, p4 is the fourth power of the current power amplifier, the units of the third power p3 and the fourth power p4 are both mW, K1 is the first adjustment coefficient, dimensionless, I ref is the integral of the first reference temperature difference, in units of (°C×S). The calculation process of the third power p3 is the same as that of the first power p1;

[0022] The controller is based on the temperature difference integral I ΔT (t) Establish the filter adjustment formula, which is as follows:

[0023] bw3 is the adjusted third bandwidth of the filter, bw4 is the fourth bandwidth of the current filter, both the third bandwidth bw3 and the fourth bandwidth bw4 are in Hertz, K2 is the second adjustment coefficient, which is dimensionless. The calculation process of the third bandwidth bw3 is the same as that of the first bandwidth bw1;

[0024] The controller combines the temperature difference integral I ΔT (t) to establish an aging assessment model. The aging assessment model includes the aging coefficient A(t) and the aging acceleration factor Faging. The controller is composed according to the formula Calculate the fifth power p5 of the power amplifier and the fifth bandwidth bw5 of the filter after the chip body ages. Base is the basic bandwidth, which is generally the initial bandwidth of the filter. The initial bandwidth base can avoid insufficient filter bandwidth caused by too small values ​​of Faging and A(t);

[0025] The controller transmits the fifth power p5 and the fifth bandwidth bw5 to the temperature control unit respectively. The temperature control unit adjusts the power amplifier according to the fifth power p5 and adjusts the filter according to the fifth bandwidth bw5. Because the chip body is in a high temperature state for a long time, the second control process needs to further limit the power of the power amplifier and the bandwidth of the filter to avoid accelerating the aging process of the chip body. The aging coefficient A(t) and the aging acceleration factor Faging are added to the calculation process of the fifth power p5 and the fifth bandwidth bw5, which can more reasonably limit the power consumption of the chip body and avoid the risk of cold soldering on the chip body.

[0026] Furthermore, the calculation formula of the aging coefficient in the aging assessment model is as follows:

[0027] Among them, A(t) is the aging coefficient at time t, dimensionless, ranging from 0 to 1, A0 is the initial aging coefficient, α is the aging sensitivity coefficient, dimensionless, n is the nonlinear index, Ea is the activation energy of the chip body, unit is eV, k is the Boltzmann constant, Tref is the reference temperature, unit is K, and the high-order power term of the temperature difference integral is used to amplify the influence of long-term temperature difference on the aging of the chip body. The Arrhenius formula reflects the short-term impact of temperature on the chip body and the impact of the integrated historical thermal stress on chip aging.

[0028] The controller sets the acceleration coefficient β according to the formula Calculate the aging acceleration factor Faging of the temperature difference integral change rate, Faging ≥ 1. When the temperature difference integral increases rapidly, the heat dissipation efficiency of the surface chip body decreases, accelerating the chip aging. Dynamically adjust the aging evaluation model to adapt to changes in the heat dissipation system performance.

[0029] Furthermore, obtaining the second temperature control scheme specifically includes the following steps:

[0030] When the controller executes the second temperature control scheme, the chip body is already in the temperature warning stage. The controller obtains the first temperature T1 from the first temperature sensor. The controller calculates the temperature T1 according to the integral formula. Calculate the junction temperature integral I of the chip body within time t T1 (t), unit is (℃×S), junction temperature integral I T1 (t) is the actual cumulative thermal resistance of the semiconductor inside the chip body, the first temperature T1 is in degrees Celsius, and the junction temperature integral I T1 The larger the value of (t), the more heat is accumulated when the chip is working. T1 (t) Used to evaluate the rate of heat generation inside the chip body, quantify thermal stress accumulation, facilitate identification of the upper limit of heat accumulation inside the chip body, and provide a basis for adjusting the power of the power amplifier and the bandwidth of the filter;

[0031] The controller is based on the junction temperature integral I T1 (t) Establishing a power amplifier adjustment formula to calculate the sixth power p6 of the power amplifier, the controller is based on the junction temperature integral I T1 (t) establishing a filter adjustment formula to calculate the sixth bandwidth bw6 of the filter;

[0032] The controller transmits the sixth bandwidth bw6 and the sixth power p6 to the temperature control unit. The temperature control unit adjusts the power amplifier according to the sixth power p6 and adjusts the filter according to the sixth bandwidth bw6. The second temperature control scheme further controls the power of the power amplifier and the bandwidth of the filter to limit the heat generation of the chip body. At the same time, it is combined with the active heat dissipation unit to realize active heat dissipation of the chip body, thereby improving the upper limit of the heat dissipation performance of the chip body, ensuring that the RF chip can stably send and receive data during the temperature warning stage, and reducing the risk of accelerated aging.

[0033] Furthermore, the adjustment formula of the power amplifier of the second temperature control solution is as follows:

[0034] p6 is the sixth power of the power amplifier after adjustment, in mW, p7 is the reference seventh power, that is, the rated power of the power amplifier, in mW, K3 is the third adjustment coefficient, dimensionless, ranging from 0.001 to 0.01, and the third adjustment coefficient is used to control the power attenuation sensitivity of the power amplifier, I2 ref is the integral of the second reference junction temperature, in (°C×S), Measure whether heat accumulation exceeds the safety threshold, reduce power nonlinearly, and quickly suppress the rise in junction temperature. The more severe the heat accumulation, the lower the power amplifier power needs to be limited to reduce the heat inside the chip body and avoid the risk of cold solder joints.

[0035] The adjustment formula of the filter of the second temperature control scheme is as follows:

[0036] bw6 is the sixth bandwidth of the adjusted filter, in Hertz, bw7 is the seventh bandwidth of the reference, that is, the rated bandwidth of the filter, in Hertz, K4 is the fourth adjustment coefficient, dimensionless, ranging from 0.002 to 0.02, and the fourth adjustment coefficient is used to control the narrowing degree of the filter bandwidth. I2 ref The second reference junction temperature integral is used to reduce the bandwidth of the filter in proportion to reduce the power consumption of signal processing. The lower limit of the bandwidth of the filter is set to ensure basic communication functions. The more serious the thermal accumulation is, the narrower the bandwidth is. The power consumption and signal quality are balanced, and the RF transceiver data is stabilized first. The third adjustment coefficient K3 and the fourth adjustment coefficient K4 determine the impact of thermal accumulation on the power amplifier power and the bandwidth of the filter. Calibration is required through thermal simulation and actual testing. The second reference junction temperature integral I2 ref The maximum junction temperature integral I for safe operation of the chip body T1 (t), calculated based on the junction temperature and time in the datasheet.

[0037] Furthermore, the active heat dissipation unit is the smallest heat dissipation unit of the Airjet mini G2 model solid-state heat dissipation chip, that is, a single MEMS diaphragm inside the solid-state heat dissipation chip. A pulse voltage is applied to both ends of the diaphragm to drive the diaphragm to vibrate at an ultrasonic frequency, stirring the air on the surface of the chip body to achieve heat dissipation.

[0038] The present invention has the following beneficial effects:

[0039] 1. The present invention designs two-stage temperature control and dynamic switching modes to balance the power consumption and stability of the RF chip. It introduces junction temperature integral and aging coefficient models respectively to quantify thermal stress and aging, and realizes adaptive adjustment of power and bandwidth.

[0040] 2. By adding a trigger switch, an active heat dissipation unit, and designing aging compensation, the RF chip can be prevented from having cold solder joints, solving the thermal management and reliability problems in dynamic scenarios and improving the stability of the RF chip.

[0041] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0043] Figure 1 This is a system block diagram of a radio frequency chip with integrated junction temperature thermal control function according to the present invention;

[0044] Figure 2 Schematic diagram of the structure of the trigger switch of the present invention.

[0045] In the accompanying drawings, the components represented by the reference numerals are as follows:

[0046] In the figure: 1-controller, 2-substrate, 11-soldering point, 21-boss, 22-contact, 23-elastic metal sheet. DETAILED DESCRIPTION

[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0048] See also Figure 1-2, the present invention provides a technical solution: a radio frequency chip with integrated junction temperature thermal control function, such as Figure 1 As shown, it includes a temperature unit, an active heat dissipation unit, a trigger switch, a power module and a chip body. The chip body includes a controller 1, a transceiver unit, a power amplifier, a filter and a temperature control unit. The temperature unit includes a first temperature sensor and a second temperature sensor. The output ends of the first temperature sensor and the second temperature sensor are both connected to the input end of the controller 1. The output end of the power module is respectively connected to the input end of the controller 1 and the trigger switch. The output end of the trigger switch is connected to the input end of the controller 1. When the output end of the trigger switch is disconnected from the input end of the controller 1, the output end of the trigger switch is connected to the input end of the active heat dissipation unit. The port of the controller 1 establishes communication with the port of the transceiver unit. The output end of the transceiver controller 1 unit is connected to the input end of the power amplifier, the output end of the filter is connected to the input end of the transceiver unit, the output end of the controller 1 is connected to the input end of the temperature control unit, and the output end of the temperature control unit is respectively connected to the input ends of the power amplifier and the filter.

[0049] The first temperature sensor is used to obtain the first temperature inside the chip body and transmit it to the controller 1. The second temperature sensor is used to obtain the second temperature outside the chip body and transmit it to the controller 1. The controller 1 is used to analyze the first temperature and the second temperature to obtain a first temperature control scheme, and transmit the first temperature control scheme to the temperature control unit for execution. The first temperature control scheme is the temperature regulation of the RF chip under normal operation. This scheme mainly focuses on the energy efficiency of the RF chip. The application scenario of the RF chip is generally a mobile scenario, and the battery life of the mobile device itself needs to be considered. Therefore, the first temperature control scheme reduces the power consumption of the RF chip and its related electronic components as much as possible while ensuring stable data transmission and reception. The trigger switch disconnects the connection with the controller 1 when the temperature is out of control. The controller 1 sets the chip body to be in the temperature warning stage. The trigger switch switches the power supply to the active heat dissipation unit at the beginning of the temperature warning stage. The active heat dissipation unit is in the temperature warning stage when the chip body is in the temperature warning stage It is used to drive the air flow on the surface of the chip body, and at the same time, the controller 1 sends the second temperature control scheme to the temperature control unit for execution. The second temperature control scheme is the temperature control of the RF chip in the temperature warning stage. This scheme mainly focuses on the stability of the RF chip. Triggering the switch switching means that the temperature environment of the RF chip is relatively harsh. The risk of the RF chip being poorly soldered due to high temperature increases. Therefore, the second temperature control scheme enhances the heat dissipation ability of the RF chip as much as possible by adding an active heat dissipation unit. Although adding an active heat dissipation unit will increase power consumption to a certain extent, it can ensure the stability of the RF chip's receiving and sending data. The power module is used to power the controller 1 and the active heat dissipation unit. The transceiver unit is used for the chip body to send and receive data to the outside. The temperature control unit is used to execute the first temperature control scheme and the second temperature control scheme, adjust the power of the power amplifier and the bandwidth of the filter, the power amplifier is used to amplify the signal of the data sent to the outside, and the filter is used to filter the signal of the data received to the outside.

[0050] Among them, such as Figure 2 As shown, a solder point 11 is provided in the controller 1, and the trigger switch includes a substrate 2 and an elastic metal sheet 23. One end of the elastic metal sheet 23 is fixed to one side of the substrate 2, and the other end of the elastic metal sheet 23 is welded and fixed to the solder point 11. The substrate 2 is fixed to one side of the chip body and is spaced a fixed distance of 0.5 mm from the controller 1. A boss 21 is provided on the side of the substrate 2 close to the controller 1, and a contact 22 is provided on the side of the boss 21 close to the controller 1. The end of the elastic metal sheet 23 away from the solder point 11 is electrically connected to the power module through the substrate 2, and one end of the contact 22 is electrically connected to the substrate 2 and the active heat dissipation unit through the boss 21 in turn;

[0051] The material of solder joint 11 is lead solder, specifically the alloy Sn63 / Pb37, which has a melting point of 183°C. The soldering materials used for the other pins of controller 1 are all lead-free solder, specifically the Sn-Cu series alloy Sn-0.7Cu, which has a melting point of 217-227°C. Solder joint 11 is the fuse trigger mechanism of the trigger switch. The melting point of solder joint 11 is lower than the soldering materials used for the other pins of controller 1. When the fuse trigger mechanism is triggered, the chip body is in the temperature warning stage, ensuring that solder joint 11 can melt under the fuse trigger mechanism, so that the elastic metal sheet 23 is disconnected from the pin of controller 1.

[0052] The specific process of the circuit breaker triggering mechanism includes the following:

[0053] As the temperature of the chip body continues to rise to the melting point of the solder joint 11, the solder joint 11 melts, and the end of the elastic metal sheet 23 close to the controller 1 is electrically disconnected from the controller 1. The pin corresponding to the solder joint 11 in the controller 1 loses the electrical signal. The loss of the electrical signal indicates that the controller 1 has received feedback that the elastic metal sheet 23 is disconnected. The controller 1 executes the temperature warning program, and the chip body enters the temperature warning stage.

[0054] After the end of the elastic metal sheet 23 near the solder joint 11 is disconnected from the pin of the controller 1, it is affected by the elastic potential energy generated by the elastic deformation of the elastic metal sheet 23 itself. The elastic metal sheet 23 is made of copper. The elastic modulus of copper at room temperature is 117 GPa. As the temperature rises, the elastic modulus of copper also increases. When the temperature reaches 200°C, the elastic modulus of copper reaches 127 GPa. Therefore, copper as the material of the elastic metal sheet 23 can meet the deformation and conductivity requirements of the elastic metal sheet 23 under the fuse trigger mechanism. The function of the boss 21 is to increase the height difference between the contact 22 and the substrate 2. When the elastic metal sheet 23 is disconnected from the solder joint 11 and contacts the contact 22 again, the elastic metal sheet 23 still has a certain deformation. The stress generated by the deformation enables one end of the elastic metal sheet 23 to be in close contact with the contact 22, avoiding poor contact between the elastic metal sheet 23 and the contact 22. One end of the elastic metal sheet 23 welded to the solder joint 11 contacts and is electrically connected to the contact 22. The power module completes the electrical connection with the active heat dissipation unit by triggering the switch.

[0055] The process of obtaining the first temperature control solution specifically includes the following steps:

[0056] The controller 1 obtains the first temperature T1 and the second temperature T2 from the first temperature sensor and the second temperature sensor respectively. The controller 1 subtracts the second temperature from the first temperature to obtain the temperature difference ΔT. The controller 1 calculates the temperature difference ΔT according to the integral formula Calculate the temperature difference integral I of the chip body within time t ΔT (t), unit is (℃×S), temperature difference integral I ΔT(t) is the cumulative thermal resistance between the inside and outside of the chip body. The first temperature T1 and the second temperature T2 are both in degrees Celsius. The temperature difference integral I ΔT The larger the value of (t), the more heat is accumulated inside the chip body, and the worse the passive heat dissipation performance is. ΔT (t) Used to evaluate the stability of passive heat dissipation within the chip body and identify potential passive heat dissipation bottlenecks;

[0057] The controller 1 sets a first threshold value py1 and a second threshold value py2. The first threshold value py1 is the average temperature of the chip body under daily load, and the second threshold value py2 is the average value between the average temperature of the chip body under daily load and the maximum temperature. The controller 1 sets a first threshold value py1 and a second threshold value py2 according to the formula Calculate the bottleneck index PJ of the passive heat dissipation of the chip body, where is the average temperature difference within time t, is the temperature difference integral I ΔT The rate of change of (t), the average temperature difference and the integral of the temperature difference I ΔT The unit of the rate of change of (t) is degrees Celsius;

[0058] When PJ < py1, it means that the passive heat dissipation performance inside the chip body meets the heat dissipation requirements, and there is no need to limit the power of the power amplifier and the bandwidth of the filter. The controller 1 and the temperature control unit do not perform any operation. When py1 ≤ PJ < py2, it means that the passive heat dissipation performance inside the chip body is reduced, and the temperature control unit needs to adjust the power of the power amplifier and the bandwidth of the filter. The controller 1 executes the first control process. When PJ ≥ py2, it means that the heat dissipation capacity inside the chip body has completely failed to meet the heat dissipation requirements. The temperature control unit needs to reduce the power of the power amplifier and the bandwidth of the filter to the maximum extent, and the controller 1 executes the second control process.

[0059] When the first control process is executed, the controller 1 is based on the temperature difference integral I ΔT (t) Establish the adjustment formula of the power amplifier, which is as follows:

[0060] p1 is the first power of the power amplifier after adjustment, in mW, p2 is the second power of the current power amplifier, in mW, K1 is the first adjustment coefficient, dimensionless, I ref is the first reference temperature difference integral, generally the temperature difference integral I ΔT (t) median, in units of (°C × S). The controller 1 transmits the adjusted first power p1 to the temperature control unit. The temperature control unit adjusts the power amplifier according to the first power p1. When IΔT increases, the exponential function attenuates the power of the power amplifier to achieve nonlinear power limitation, avoiding insufficient response of linear control when the temperature inside the chip body is high;

[0061] Controller 1 is based on the temperature difference integral I ΔT (t) Establish the filter adjustment formula, which is as follows:

[0062] bw1 is the first bandwidth of the adjusted filter, bw2 is the second bandwidth of the current filter, the units of the first bandwidth bw1 and the second bandwidth bw2 are both Hertz, K2 is the second adjustment coefficient, dimensionless, I ref is the first reference temperature difference integral, generally the temperature difference integral I ΔT (t) Median, unit is (℃×S). By narrowing the bandwidth of the filter, the signal processing complexity is reduced, and the power consumption of the filter and its related digital circuits is reduced. Linear control ensures sufficient signal bandwidth within a safe range. Controller 1 sends the first bandwidth bw1 to the temperature control unit, and the temperature control unit adjusts the filter according to the first bandwidth bw1.

[0063] When the second control process is executed, the controller 1 is based on the temperature difference integral I ΔT (t) Establish the adjustment formula of the power amplifier, which is as follows:

[0064] p3 is the third power of the power amplifier after adjustment, p4 is the fourth power of the current power amplifier, the units of the third power p3 and the fourth power p4 are both mW, K1 is the first adjustment coefficient, dimensionless, I ref is the first reference temperature difference integral, generally the temperature difference integral I ΔT (t) median, unit is (℃×S). The calculation process of the third power p3 is the same as that of the first power p1;

[0065] Controller 1 is based on the temperature difference integral I ΔT (t) Establish the filter adjustment formula, which is as follows:

[0066] bw3 is the adjusted third bandwidth of the filter, bw4 is the fourth bandwidth of the current filter, both the third bandwidth bw3 and the fourth bandwidth bw4 are in Hertz, K2 is the second adjustment coefficient, which is dimensionless. The calculation process of the third bandwidth bw3 is the same as that of the first bandwidth bw1;

[0067] Controller 1 combines the temperature difference integral I ΔT (t) to establish an aging assessment model. The aging assessment model includes the aging coefficient A(t) and the aging acceleration factor Faging. The controller 1 is composed of the formula Calculate the fifth power p5 of the power amplifier and the fifth bandwidth bw5 of the filter after the chip body ages. Base is the basic bandwidth, which is generally the initial bandwidth of the filter. The initial bandwidth base can avoid insufficient filter bandwidth caused by too small values ​​of Faging and A(t);

[0068] Controller 1 transmits the fifth power p5 and the fifth bandwidth bw5 to the temperature control unit respectively. The temperature control unit adjusts the power amplifier according to the fifth power p5 and adjusts the filter according to the fifth bandwidth bw5. Because the chip body is in a high temperature state for a long time, the second control process needs to further limit the power of the power amplifier and the bandwidth of the filter to avoid accelerating the aging process of the chip body. The aging coefficient A(t) and the aging acceleration factor Faging are added to the calculation process of the fifth power p5 and the fifth bandwidth bw5, which can more reasonably limit the power consumption of the chip body and avoid the risk of cold soldering on the chip body.

[0069] The calculation formula of the aging coefficient in the aging assessment model is as follows:

[0070] Where A(t) is the aging coefficient at time t, dimensionless, ranging from 0 to 1, A0 is the initial aging coefficient, generally 0, α is the aging sensitivity coefficient, dimensionless, n is the nonlinear exponent, ranging from 2 to 3, Ea is the activation energy of the chip body, in eV, generally 0.8 eV, and k is the Boltzmann constant, generally 8.617×10 -5 eV / K, Tref is the reference temperature, the unit is K, generally 298K, the high-order power term of the temperature difference integral is used to amplify the effect of long-term temperature difference on the aging of the chip body. The Arrhenius formula reflects the short-term impact of temperature on the chip body and the impact of the integrated historical thermal stress on chip aging.

[0071] Controller 1 sets the acceleration coefficient β according to the formula The aging acceleration factor Faging is calculated for the temperature difference integral change rate. Faging ≥ 1, and the acceleration coefficient β is 1.05, which is used to describe the linear relationship of acceleration. When the temperature difference integral grows rapidly, the heat dissipation efficiency of the surface chip body decreases, accelerating the chip aging. The aging assessment model is dynamically adjusted to adapt to changes in the heat dissipation system performance.

[0072] The second temperature control scheme is obtained by:

[0073] When the controller 1 executes the second temperature control scheme, the chip body is already in the temperature warning stage. The controller 1 obtains the first temperature T1 from the first temperature sensor. The controller 1 calculates the temperature T1 according to the integral formula. Calculate the junction temperature integral I of the chip body within time t T1 (t), unit is (℃×S), junction temperature integral I T1 (t) is the actual cumulative thermal resistance of the semiconductor inside the chip body, the first temperature T1 is in degrees Celsius, and the junction temperature integral I T1The larger the value of (t), the more heat is accumulated when the chip is working. T1 (t) Used to evaluate the rate of heat generation inside the chip body, quantify thermal stress accumulation, facilitate identification of the upper limit of heat accumulation inside the chip body, and provide a basis for adjusting the power of the power amplifier and the bandwidth of the filter;

[0074] Controller 1 integrates the junction temperature I T1 (t) Establishing a power amplifier adjustment formula to calculate the sixth power p6 of the power amplifier, the controller 1 calculates the sixth power p6 of the power amplifier based on the junction temperature integral I T1 (t) establishing a filter adjustment formula to calculate the sixth bandwidth bw6 of the filter;

[0075] Controller 1 transmits the sixth bandwidth bw6 and the sixth power p6 to the temperature control unit. The temperature control unit adjusts the power amplifier according to the sixth power p6 and adjusts the filter according to the sixth bandwidth bw6. The second temperature control scheme further controls the power of the power amplifier and the bandwidth of the filter to limit the heat generation of the chip body. At the same time, it is combined with the active heat dissipation unit to realize active heat dissipation of the chip body, thereby improving the upper limit of the heat dissipation performance of the chip body, ensuring that the RF chip can stably send and receive data during the temperature warning stage, and reducing the risk of accelerated aging.

[0076] The adjustment formula of the power amplifier of the second temperature control scheme is as follows:

[0077] p6 is the sixth power of the power amplifier after adjustment, in mW, p7 is the reference seventh power, that is, the rated power of the power amplifier, in mW, K3 is the third adjustment coefficient, dimensionless, ranging from 0.001 to 0.01, and the third adjustment coefficient is used to control the power attenuation sensitivity of the power amplifier, I2 ref The integral of the second reference junction temperature is in (°C × S). For example, the safe junction temperature multiplied by the time is 450000 (°C × S). Measure whether the heat accumulation exceeds the safety threshold, reduce power nonlinearly, and quickly suppress the junction temperature rise, such as the junction temperature integral I T1 (t) When the value is doubled, the power amplifier power is reduced to 1 / e times. The more serious the heat accumulation is, the lower the power amplifier power needs to be limited to reduce the heat inside the chip body and avoid the risk of cold solder joints.

[0078] The adjustment formula of the filter of the second temperature control scheme is as follows:

[0079] bw6 is the sixth bandwidth of the adjusted filter, in Hertz, bw7 is the seventh bandwidth of the reference, that is, the rated bandwidth of the filter, in Hertz, K4 is the fourth adjustment coefficient, dimensionless, ranging from 0.002 to 0.02, and the fourth adjustment coefficient is used to control the narrowing degree of the filter bandwidth. I2 ref The second reference junction temperature integral is used to reduce the filter bandwidth proportionally to reduce the power consumption of signal processing. For example, the junction temperature integral I T1 (t) reaches I2 ref , the bandwidth of the filter is reduced to 50%, and the lower limit of the bandwidth of the filter is set to ensure basic communication functions. The more serious the thermal accumulation, the narrower the bandwidth. Balance power consumption and signal quality, give priority to stabilizing RF transceiver data. The third adjustment coefficient K3 and the fourth adjustment coefficient K4 determine the impact of thermal accumulation on the power amplifier power and the bandwidth of the filter. Calibration is required through thermal simulation and actual testing. The second reference junction temperature integral I2 ref The maximum junction temperature integral I for safe operation of the chip body T1 (t) is calculated based on the datasheet junction temperature and time, for example, 125 degrees Celsius and 1 hour.

[0080] Among them, the active heat dissipation unit is the smallest heat dissipation unit of the Airjet mini G2 solid-state heat dissipation chip, that is, a single MEMS diaphragm inside the solid-state heat dissipation chip. Pulse voltage is applied to both ends of the diaphragm to drive the diaphragm to vibrate at an ultrasonic frequency, stirring the air on the surface of the chip body to achieve heat dissipation.

[0081] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any technician familiar with the technical field, within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solution and inventive concept of the present invention, should be covered by the scope of protection of the present invention.

Claims

1. A radio frequency chip with integrated junction temperature thermal control function, comprising a temperature unit, an active heat dissipation unit, a trigger switch, a power module, and a chip body, characterized in that: The chip body comprises a controller (1), a transceiver unit, a power amplifier, a filter and a temperature control unit, the temperature unit comprises a first temperature sensor and a second temperature sensor, the output ends of the first temperature sensor and the second temperature sensor are both connected to the input end of the controller (1), the output end of the power module is respectively connected to the input end of the controller (1) and the trigger switch, the output end of the trigger switch is connected to the input end of the controller (1), when the output end of the trigger switch is disconnected from the input end of the controller (1), the output end of the trigger switch is connected to the input end of the active heat dissipation unit, the port of the controller (1) establishes communication with the port of the transceiver unit, the output end of the transceiver controller (1) unit is connected to the input end of the power amplifier, the output end of the filter is connected to the input end of the transceiver unit, the output end of the controller (1) is connected to the input end of the temperature control unit, and the output end of the temperature control unit is respectively connected to the input ends of the power amplifier and the filter; The first temperature sensor is used to obtain a first temperature inside the chip body, and the second temperature sensor is used to obtain a second temperature outside the chip body. The controller (1) is used to analyze the first temperature and the second temperature, and transmit the first temperature control scheme to the temperature control unit for execution. The trigger switch disconnects the connection with the controller (1) when the temperature is out of control. The controller (1) sets the chip body to be in a temperature warning stage. The trigger switch switches the power supply to the active heat dissipation unit at the beginning of the temperature warning stage. The active heat dissipation unit is used to drive air flow on the surface of the chip body when the chip body is in the temperature warning stage. At the same time, the controller (1) sends the second temperature control scheme to the temperature control unit for execution. The power module is used to power the controller (1) and the active heat dissipation unit. The transceiver unit is used for the chip body to send and receive data externally. The temperature control unit is used to execute the first temperature control scheme and the second temperature control scheme, adjust the power of the power amplifier and the bandwidth of the filter, the power amplifier is used to amplify the signal of the data sent externally, and the filter is used to filter the signal of the data received externally.

2. The radio frequency chip with integrated junction temperature control function according to claim 1, characterized in that: The controller (1) is provided with a soldering point (11), the trigger switch comprises a substrate (2) and an elastic metal sheet (23), one end of the elastic metal sheet (23) is fixed to one side of the substrate (2), and the other end of the elastic metal sheet (23) is fixed by soldering to the soldering point (11), the substrate (2) is fixed to one side of the chip body and is spaced a fixed distance from the controller (1), a boss (21) is provided on the side of the substrate (2) close to the controller (1), and a contact (22) is provided on the side of the boss (21) close to the controller (1), the end of the elastic metal sheet (23) away from the soldering point (11) is electrically connected to the power module through the substrate (2), and one end of the contact (22) is electrically connected to the substrate (2) and the active heat dissipation unit through the boss (21) in turn; The soldering point (11) is made of lead solder, and the soldering materials used for the remaining pins of the controller (1) are all lead-free solder. The soldering point (11) is a fuse trigger mechanism for triggering the switch. The melting point of the soldering point (11) is lower than the soldering materials used for the remaining pins of the controller (1). When the fuse trigger mechanism is triggered, the chip body is in a temperature warning stage.

3. The radio frequency chip with integrated junction temperature control function according to claim 2, characterized in that: The specific process of the fuse triggering mechanism includes the following: As the temperature of the chip body continues to rise to the melting point of the solder joint (11), the solder joint (11) melts, the elastic metal sheet (23) close to the controller (1) is electrically disconnected from the controller (1), and the pin corresponding to the solder joint (11) in the controller (1) loses the electrical signal. The loss of the electrical signal indicates that the controller (1) receives feedback that it is disconnected from the elastic metal sheet (23), and the temperature warning program is executed, and the chip body enters the temperature warning stage; After the end of the elastic metal sheet (23) close to the soldering point (11) is disconnected from the controller (1), the elastic metal sheet (23) is affected by the elastic potential energy generated by the elastic deformation of the elastic metal sheet (23) itself. The elastic metal sheet (23) is made of copper. The end of the elastic metal sheet (23) welded to the soldering point (11) contacts the contact (22) and is electrically connected. The power module completes the electrical connection with the active heat dissipation unit by triggering the switch.

4. The radio frequency chip with integrated junction temperature control function according to claim 1, characterized in that: Obtaining the first temperature control solution specifically includes the following: The controller (1) obtains a first temperature T1 and a second temperature T2 from a first temperature sensor and a second temperature sensor respectively, and subtracts the second temperature from the first temperature to obtain a temperature difference ΔT. According to the integral formula Calculate the temperature difference integral I of the chip body within time t ΔT (t); Set the first threshold py1 and the second threshold py2 according to the formula Calculate the bottleneck index PJ of the passive heat dissipation of the chip body, where is the average temperature difference within time t, is the temperature difference integral I ΔT (t) rate of change; When py1≤PJ<py2, the first regulation process is executed, and when PJ≥py2, the second regulation process is executed.

5. The radio frequency chip with integrated junction temperature control function according to claim 4, characterized in that: When the first control process is executed, based on the temperature difference integral I ΔT (t) Establish the adjustment formula of the power amplifier, which is as follows: p1 is the first power of the power amplifier after adjustment, in mW, p2 is the second power of the current power amplifier, in mW, K1 is the first adjustment coefficient, dimensionless, I ref The first reference temperature difference integral is expressed in (°C × S). The adjusted first power p1 is transmitted to the temperature control unit, and the temperature control unit adjusts the power amplifier according to the first power p1. Based on temperature difference integral I ΔT (t) Establish the filter adjustment formula, which is as follows: bw1 is the first bandwidth of the adjusted filter, bw2 is the second bandwidth of the current filter, the units of the first bandwidth bw1 and the second bandwidth bw2 are both Hertz, K2 is the second adjustment coefficient, I ref The first reference temperature difference is integrated, and the first bandwidth bw1 is sent to the temperature control unit. The temperature control unit adjusts the filter according to the first bandwidth bw1.

6. The radio frequency chip with integrated junction temperature control function according to claim 4, characterized in that: When the second control process is executed, based on the temperature difference integral I ΔT (t) Establish the adjustment formula of the power amplifier, which is as follows: p3 is the third power of the power amplifier after adjustment, p4 is the fourth power of the current power amplifier, the units of the third power p3 and the fourth power p4 are both mW, K1 is the first adjustment coefficient, I ref is the first reference temperature difference integral; Based on temperature difference integral I ΔT (t) Establish the filter adjustment formula, which is as follows: bw3 is the adjusted third bandwidth of the filter, bw4 is the fourth bandwidth of the current filter, the third bandwidth bw3 and the fourth bandwidth bw4 are both in Hertz, and K2 is the second adjustment coefficient; Combined with temperature difference integral I ΔT (t) to establish an aging assessment model. The aging assessment model includes the aging coefficient A(t) and the aging acceleration factor Faging. Calculate the fifth power p5 of the power amplifier and the fifth bandwidth bw5 of the filter after the chip body ages, base is the basic bandwidth respectively; The controller (1) transmits the fifth power p5 and the fifth bandwidth bw5 to the temperature control unit respectively. The temperature control unit adjusts the power amplifier according to the fifth power p5 and adjusts the filter according to the fifth bandwidth bw5.

7. The radio frequency chip with integrated junction temperature control function according to claim 6, characterized in that: The calculation formula of the aging coefficient in the aging assessment model is as follows: Where A(t) is the aging coefficient at time t, dimensionless, ranging from 0 to 1, A0 is the initial aging coefficient, α is the aging sensitivity coefficient, n is the nonlinear index, Ea is the activation energy of the chip body, k is the Boltzmann constant, and Tref is the reference temperature; Set the acceleration coefficient β according to the formula Calculate the aging acceleration factor Faging of the integral change rate of the temperature difference, where Faging ≥ 1.

8. The radio frequency chip with integrated junction temperature control function according to claim 1, characterized in that: Obtaining the second temperature control solution specifically includes the following: When the second temperature control scheme is executed, the chip body is in the temperature warning stage, and the controller (1) obtains the first temperature T1 from the first temperature sensor, and calculates the temperature according to the integral formula Calculate the junction temperature integral I of the chip body within time t T1 (t), junction temperature integral I T1 (t) is the actual cumulative thermal resistance of the semiconductor inside the chip body; Based on the junction temperature integral I T1 (t) Establishing a power amplifier adjustment formula to calculate the sixth power p6 of the power amplifier, based on the junction temperature integral I T1 (t) establishing a filter adjustment formula to calculate the sixth bandwidth bw6 of the filter; The controller (1) transmits the sixth bandwidth bw6 and the sixth power p6 to the temperature control unit, and the temperature control unit adjusts the power amplifier according to the sixth power p6 and adjusts the filter according to the sixth bandwidth bw6.

9. The radio frequency chip with integrated junction temperature control function according to claim 8, characterized in that: The adjustment formula of the power amplifier of the second temperature control scheme is as follows: p6 is the sixth power of the power amplifier after adjustment, in mW, p7 is the reference seventh power, that is, the rated power of the power amplifier, K3 is the third adjustment coefficient, the value range is 0.001-0.01, I2 ref is the integral of the second reference junction temperature; The adjustment formula of the filter of the second temperature control scheme is as follows: bw6 is the sixth bandwidth of the adjusted filter, bw7 is the reference seventh bandwidth, that is, the rated bandwidth of the filter, and K4 is the fourth adjustment coefficient.

10. The radio frequency chip with integrated junction temperature control function according to claim 1, characterized in that: The active heat dissipation unit is the smallest heat dissipation unit of the solid-state heat dissipation chip, that is, a single diaphragm inside the solid-state heat dissipation chip. Pulse voltage is applied to both ends of the diaphragm to drive the diaphragm to vibrate at an ultrasonic frequency, stirring the air on the surface of the chip body.

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