Photoelectric device and preparation method thereof

Abstract

The invention provides a photoelectric device and a preparation method thereof. The photoelectric device comprises at least one photoelectric device unit, and each photoelectric device unit comprises a photodiode, a wavelength conversion layer and a reflection layer. The photodiode is provided with a light incident side and a backlight side which deviate from each other. The wavelength conversion layer is located on the backlight side of the photodiode, the wavelength conversion layer is used for converting a first type of photons which are incident from the light incident side of the photodiode and are emitted to the wavelength conversion layer through the photodiode into a second type of photons, and the wavelength of the second type of photons is smaller than that of the first type of photons. The reflecting layer is located on the side, away from the photodiode, of the wavelength conversion layer and used for reflecting the second type of photons towards the side, facing the photodiode, of the wavelength conversion layer. According to the photoelectric device, the detection photon wavelength of the photodiode in the photoelectric device can be improved, the detection performance of the photoelectric device is improved, and meanwhile it can be guaranteed that the arrangement of the wavelength conversion layer does not affect entering of photons on the light incident side into the photodiode.

Description

Technical Field

[0001] The present application belongs to the field of photoelectric detection technology, and in particular relates to a photoelectric device and a method for preparing the same. Background Art

[0002] Single-photon detection technology is an extremely sensitive light detection technique with broad applications in communications, radar, and other fields. Near-infrared single-photon detection devices are a common type of optoelectronic device. Improving the detection wavelength and performance of near-infrared single-photon detection devices is of great significance. Summary of the Invention

[0003] According to an embodiment of the present application, a photoelectric device is provided, wherein the photoelectric device includes at least one photoelectric device unit, each of which includes:

[0004] A photodiode having a light incident side and a backlight side facing away from each other;

[0005] a wavelength conversion layer, located on the backlight side of the photodiode, the wavelength conversion layer being configured to convert first-type photons incident from the light-incident side of the photodiode and incident on the wavelength conversion layer through the photodiode into second-type photons, wherein the wavelength of the second-type photons is smaller than the wavelength of the first-type photons;

[0006] The reflective layer is located on a side of the wavelength conversion layer away from the photodiode, and is used to reflect the second type of photons toward the photodiode.

[0007] In some embodiments, the wavelength conversion layer includes a patterned wavelength conversion material layer and a dielectric layer covering the wavelength conversion material layer.

[0008] In some embodiments, the wavelength conversion material layer is made of a mixed material including one of polymethyl methacrylate, polydimethylsiloxane, and diethyl carbonate and a core-shell structured nanomaterial.

[0009] In some embodiments, the wavelength of the second type of photons is less than or equal to 1100 nm.

[0010] In some embodiments, the optoelectronic device includes a wiring layer located on a side of the wavelength conversion layer away from the photodiode, the wiring layer has at least one metal wire layer, and the reflective layer is formed on a metal wire layer of the at least one metal wire layer.

[0011] In some embodiments, the photodiode comprises:

[0012] A substrate layer having a first surface located on a backlight side;

[0013] a first well layer located in the substrate layer and exposed from a first surface of the substrate layer; the first well layer has a first conductivity type;

[0014] a second well layer located in the substrate layer and stacked on a side of the first well layer facing away from the first surface; the second well layer has a second conductivity type;

[0015] The contact electrodes are spaced apart and arranged at the periphery of the first well layer and the second well layer, and the contact electrodes have a second conductivity type.

[0016] In some embodiments, for a device having a wiring layer, the optoelectronic device further includes:

[0017] a control circuit layer, located on a side of the routing layer away from the photodiode, comprising a voltage input circuit and a signal acquisition circuit;

[0018] a first electrical connection structure, penetrating the wavelength conversion layer and the routing layer, and configured to connect the first well layer and the signal acquisition circuit;

[0019] The second electrical connection structure penetrates the wavelength conversion layer and the wiring layer, and is used to connect the contact electrode and the voltage input circuit.

[0020] In some embodiments, the substrate layer is a silicon substrate; and the photodiode is a silicon-based single-photon avalanche diode.

[0021] The present application further provides a method for preparing a photoelectric device, the method comprising:

[0022] forming a photodiode having a light incident side and a light-repelling side facing away from each other;

[0023] A wavelength conversion layer is formed, where the wavelength conversion layer is located on the backlight side of the photodiode. The wavelength conversion layer is used to convert a first type of photon incident from the light incident side of the photodiode and reaching the wavelength conversion layer through the photodiode into a second type of photon, wherein the wavelength of the second type of photon is smaller than the wavelength of the first type of photon.

[0024] A reflective layer is formed, where the reflective layer is located on a side of the wavelength conversion layer away from the photodiode, and is configured to reflect the second type of photons toward the photodiode.

[0025] In some embodiments, forming the wavelength conversion layer includes:

[0026] forming a first dielectric layer on the backlight side of the photodiode;

[0027] forming a wavelength conversion material layer on a side of the first dielectric layer facing away from the photodiode;

[0028] A second dielectric layer covering the wavelength conversion material layer is formed on a side of the first dielectric layer away from the photodiode.

[0029] In some embodiments, forming a wavelength conversion material layer on a side of the first dielectric layer facing away from the photodiode includes:

[0030] dissolving core-shell structured nanomaterial particles into an organic solvent comprising polymethyl methacrylate, polydimethylsiloxane and diethyl carbonate to form a wavelength conversion material solution;

[0031] placing a wavelength conversion material solution on a surface of the first dielectric layer facing away from the photodiode, and curing the solution to form a wavelength conversion material film layer;

[0032] The wavelength conversion material film layer is patterned to form the wavelength conversion material layer.

[0033] The main technical effects achieved by the embodiments of the present application are:

[0034] The optoelectronic device and its preparation method provided in the embodiment of the present application converts the first type of photons incident from the light-incident side of the photodiode and incident on the wavelength conversion layer through the photodiode into the second type of photons, wherein the wavelength of the second type of photons is smaller than the wavelength of the first type of photons. In addition, the second type of photons converted by the wavelength conversion layer can be detected by the photodiode after being reflected by the reflective layer, thereby increasing the wavelength of the photons detected by the photodiode and improving the detection performance of the optoelectronic device. In addition, the wavelength conversion layer is located on the backlight side of the photodiode, and it can also ensure that the setting of the wavelength conversion layer does not affect the photons on the light-incident side from entering the photodiode. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A top view of a photoelectric device provided in one embodiment of the present application;

[0036] Figure 2 for Figure 1 The sectional view taken along section line AA is shown;

[0037] Figure 3 A cross-sectional view of another optoelectronic device provided in accordance with an embodiment of the present application;

[0038] Figure 4 A top view of another optoelectronic device provided in one embodiment of the present application;

[0039] Figure 5 A top view of another optoelectronic device provided in one embodiment of the present application;

[0040] Figure 6 A top view of another optoelectronic device provided in one embodiment of the present application;

[0041] Figure 7 A flow chart of a method for preparing a photoelectric device according to an embodiment of the present application;

[0042] Figures 8 to 13 An embodiment of the present application provides a process diagram for preparing a photoelectric device. DETAILED DESCRIPTION

[0043] Here, the technical solutions in the embodiments (or "implementations") of the present application will be clearly and completely described in conjunction with the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0044] If there are terms related to directional indications or positional relationships in the embodiments of this application (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationship, movement, etc. between the components in a specific posture; if the specific posture changes, the directional indication or positional relationship will also change accordingly. In addition, the terms "first" and "second" in the embodiments of this application are only used for descriptive convenience and should not be understood as indicating or implying relative importance.

[0045] For photons with longer wavelengths (such as 1310nm and 1550nm) commonly used in communications, current near-infrared single-photon sensitive detectors are primarily based on narrow-bandgap semiconductor materials, such as single-photon avalanche photodiodes (SPADs) made of InGaAs, GaAs, and SiGe. However, due to the small bandgap of these materials, defect carriers are easily generated, resulting in high device noise and significantly affecting device performance.

[0046] Silicon-based single-photon avalanche photodiodes (SPADs) are mature single-photon detection devices with the advantage of low dark counts. They have shown broad application prospects in areas such as automotive radar and fluorescence detection. However, due to the wide bandgap of silicon, they can only respond to photons with shorter wavelengths (e.g., below 1100nm), and cannot be directly applied to detection in other longer wavelength near-infrared bands.

[0047] Based on this, the present application provides a photoelectric device and a method for preparing the same. The photoelectric device includes at least one photoelectric device unit, and each photoelectric device unit includes a photodiode, a wavelength conversion layer and a reflective layer. The photodiode has a light incident side and a backlight side that are opposite to each other. The wavelength conversion layer is located on the backlight side of the photodiode, and the wavelength conversion layer is used to convert a first type of photon incident from the light incident side of the photodiode and emitted to the wavelength conversion layer through the photodiode into a second type of photon, wherein the wavelength of the second type of photon is smaller than the wavelength of the first type of photon. The reflective layer is located on the side of the wavelength conversion layer away from the photodiode, and is used to reflect the second type of photon toward the side of the photodiode. The above-mentioned photoelectric device, by arranging a wavelength conversion layer on the backlight side of the photodiode, converts the first type of photon incident from the light incident side of the photodiode and emitted to the wavelength conversion layer through the photodiode into a second type of photon, wherein the wavelength of the second type of photon is smaller than the wavelength of the first type of photon. Combined with the reflective layer, the second type of photons converted by the wavelength conversion layer can be detected by the photodiode after reflection, increasing the wavelength of photons detected by the photodiode and improving the detection performance of the optoelectronic device. Furthermore, the wavelength conversion layer is located on the backlight side of the photodiode, ensuring that the wavelength conversion layer does not affect the entry of photons on the incident side into the photodiode.

[0048] The following is combined with Figures 1 to 13 The photoelectric device and the preparation method thereof are described in detail.

[0049] Please refer to Figure 1 , and in combination with other drawings when necessary, the present application provides a photoelectric device 100, wherein the photoelectric device 100 includes at least one photoelectric device 100 unit, and each photoelectric device 100 unit includes a photodiode 10, a wavelength conversion layer 20 and a reflective layer.

[0050] The photodiode 10 has a light incident side 1001 and a backlight side 1002 that are opposite to each other.

[0051] The wavelength conversion layer 20 is located on the backlight side 1002 of the photodiode 10. The wavelength conversion layer 20 is used to convert the first type of photons that are incident from the light incident side 1001 of the photodiode 10 and are emitted to the wavelength conversion layer 20 through the photodiode 10 into the second type of photons, wherein the wavelength of the second type of photons is smaller than the wavelength of the first type of photons.

[0052] The reflective layer is located on a side of the wavelength conversion layer 20 away from the photodiode 10 , and is configured to reflect the second type of photons toward the side of the photodiode 10 .

[0053] In some embodiments, the wavelength conversion layer 20 includes a patterned wavelength conversion material layer 22 and a dielectric layer 21 covering the wavelength conversion material layer 22 .

[0054] The dielectric layer 21 may include a first dielectric layer 211 located between the backlight side 1002 of the photodiode 10 and the wavelength conversion material layer 22 , and a second dielectric layer 212 covering the wavelength conversion material layer 22 and the exposed first dielectric layer 211 .

[0055] In some embodiments, the dielectric layer 21 may be SiO2 or Si3N4. In other embodiments, the dielectric layer may be made of other dielectric materials, such as High-K materials, Low-K materials, Al2O3, or a combination of these materials. The materials of the first dielectric layer 211 and the second dielectric layer 212 may be the same or different.

[0056] In some embodiments, the wavelength conversion material layer 22 is made of a mixed material including one of polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), and diethyl carbonate and a core-shell structured nanomaterial.

[0057] Among them, the core-shell structure nanomaterial can be NaYF4:Yb3 + / Er3 + @NaYF4 material.

[0058] In other embodiments, the material of the wavelength conversion material layer 22 may also be a rare earth ion (such as Er) introduced during the synthesis of the metal organic framework. 3+ 、Yb 3+ 、Tm 3+ ) as metal nodes or coordination centers, thereby forming a wavelength conversion material.

[0059] In some embodiments, the wavelength of the second type of photons is w1, where w1 is less than or equal to 1100 nm.

[0060] The wavelength of the first type of photons is w2. In some embodiments, the wavelength of the first type of photons may be greater than 1100 nm. For example, the wavelength of the first type of photons may be 1310 nm, 1550 nm, etc. Accordingly, the optoelectronic device 100 may be applied to detection in the near-infrared band with wavelengths of 1310 nm, 1550 nm, etc.

[0061] In some embodiments, the optoelectronic device 100 includes a wiring layer 30 located on the side of the wavelength conversion layer 20 away from the photodiode 10 , the wiring layer 30 has at least one metal wire layer 31 , and the reflective layer is formed on a metal wire layer of the at least one metal wire layer 31 .

[0062] The material of the metal wire layer 31 can be a metal commonly used in semiconductor processes such as Cu and Al, or other metal materials.

[0063] The reflective layer can be directly formed by the metal wire layer 31, such as Figure 2 and Figure 3 The metal wire layer 31 shown is used as the reflective layer. Of course, the reflective layer can also be formed by disposing a reflective material on the metal wire layer 31.

[0064] In some embodiments, the photodiode 10 includes a substrate layer 11 , a first well layer 12 , a second well layer 13 , and a contact electrode 14 .

[0065] The substrate layer 11 has a first surface 10021 located on the backlight side 1002 , and the substrate layer 11 has a second conductivity type.

[0066] The doping of the substrate layer 11 can be uniform doping or non-uniform doping, for example, it can be an inverted doped substrate, and the doping concentration gradually decreases from the light incident side 1001 to the backlight side 1002, for example, the doping concentration on the light incident side 1001 is 10 18-20 / cm 3 , the doping concentration of the backlight side 1002 is 10 13-14 / cm 3 .

[0067] The first well layer 12 is located in the substrate layer 11 and exposed from the first surface 10021 of the substrate layer 11 ; the first well layer 12 has a first conductivity type.

[0068] The second well layer 13 is located in the substrate layer 11 and is stacked on a side of the first well layer 12 away from the first surface 10021 ; the second well layer 13 has a second conductivity type.

[0069] The contact electrodes 14 are spaced apart and arranged at the periphery of the first well layer 12 and the second well layer 13 , and the contact electrodes 14 have the second conductivity type.

[0070] The contact electrode 14 may be in a closed ring shape, such as a closed circular ring shape, a closed rectangular ring shape, or a closed square ring shape.

[0071] In some embodiments, the first conductivity type is N-type, and the second conductivity type is P-type. In other embodiments, the first conductivity type is P-type, and the second conductivity type is N-type.

[0072] It should be noted that for N-type materials, elements such as phosphorus (P), arsenic (As), or antimony (Sb) can be doped. For P-type materials, elements such as boron (B), aluminum (Al), gallium (Ga), or indium (In) can be doped.

[0073] In some embodiments, for the optoelectronic device 100 having the wiring layer 30 , the optoelectronic device 100 further includes a control circuit layer 40 , a first electrical connection structure 51 and a second electrical connection structure 52 .

[0074] The control circuit layer 40 is located on the side of the wiring layer 30 away from the photodiode 10, and includes a voltage input circuit and a signal acquisition circuit;

[0075] A first electrical connection structure 51 penetrates the wavelength conversion layer 20 and the wiring layer 30 and is used to connect the first well layer 12 and the signal acquisition circuit;

[0076] The second electrical connection structure 52 penetrates the wavelength conversion layer 20 and the wiring layer 30 and is used to connect the contact electrode 14 and the voltage input circuit.

[0077] The optoelectronic device 100 may further include a metal interconnection structure 53, which may be disposed on the side of the first electrical connection structure 51 and the second electrical connection structure 52 facing away from the photodiode 10, and is used to connect the first electrical connection structure 51 with the signal acquisition circuit and connect the contact electrode 14 with the voltage input circuit respectively.

[0078] The metal interconnect structure 53 may be located in both the routing layer 30 and the control circuit layer 40, such as Figure 2 and Figure 3 It may also be located only in the routing layer 30 or only in the control circuit layer 40.

[0079] In some embodiments, the substrate layer 11 is a silicon substrate. The photodiode 10 is a silicon-based single-photon avalanche diode.

[0080] It should be noted that, combined with Figures 2 to 6 As shown, the first well layer 12 and the second well layer 13 can be in various matching shapes, such as Figure 1 、 Figure 4 and Figure 5 The circles, octagons and squares shown are respectively.

[0081] It should be noted that the photodiode 10 may further include an isolation ring 15 located outside the contact electrode 14. The shape of the isolation ring 15 can be set as needed. The isolation ring 15 can be deep trench isolation (DTI) or shallow trench isolation (STI). It is understandable that Figure 1 、 Figures 4 and 5 In each of the top views shown, the contact electrode 14 is not shown. The actual contact electrode 14 is located between the isolation ring 15 and the first well layer 12 .

[0082] It should also be noted that, in some other embodiments, the photodiode 10 further includes a light trapping structure 16, an anti-reflection layer 17 and a lens layer 18 located on the light incident side 1001 of the substrate layer 11, for example Figure 3 The optoelectronic device 200 shown in FIG. Of course, it may also include only one or two of the light trapping structure 16, the anti-reflection layer 17, and the lens layer 18, or may not include the light trapping structure 16, the anti-reflection layer 17, and the lens layer 18. The specific configuration can be based on actual needs.

[0083] Please refer to Figure 7 The present application further provides a method for preparing a photoelectric device, which includes the following steps S101 to S105.

[0084] In step S101, a photodiode is formed, wherein the photodiode has a light incident side and a backlight side that are opposite to each other;

[0085] In step S103, a wavelength conversion layer is formed, which is located on the backlight side of the photodiode. The wavelength conversion layer is used to convert the first type of photons that are incident from the light incident side of the photodiode and reach the wavelength conversion layer through the photodiode into the second type of photons, wherein the wavelength of the second type of photons is smaller than the wavelength of the first type of photons.

[0086] In step S105 , a reflective layer is formed. The reflective layer is located on a side of the wavelength conversion layer away from the photodiode, and is used to reflect the second type of photons toward the photodiode.

[0087] The following combination Figures 8 to 13 As shown, the above preparation method is described in detail by taking the preparation of the optoelectronic device 100 as an example.

[0088] Combine Figure 8 As shown, in step S101 , a photodiode 10 is formed. The photodiode 10 has a light incident side 1001 and a backlight side 1002 that are opposite to each other.

[0089] Combine Figure 9 and Figure 10 As shown, in step S103, a wavelength conversion layer 20 is formed, and the wavelength conversion layer 20 is located on the backlight side 1002 of the photodiode 10. The wavelength conversion layer 20 is used to convert the first type of photons that are incident from the light incident side 1001 of the photodiode 10 and are emitted to the wavelength conversion layer 20 through the photodiode 10 into the second type of photons, wherein the wavelength of the second type of photons is smaller than the wavelength of the first type of photons.

[0090] In step S105 , a reflective layer is formed. The reflective layer is located on a side of the wavelength conversion layer 20 away from the photodiode 10 , and is used to reflect the second type of photons toward the side of the photodiode 10 .

[0091] Combine Figure 11 As shown, a metal layer 31 may be formed, and the metal line layer 31 serves as the reflective layer.

[0092] In some embodiments, the forming of the wavelength conversion layer 20 includes the following steps:

[0093] like Figure 9 As shown, a first dielectric layer 211 is formed on the backlight side 1002 of the photodiode 10;

[0094] forming a wavelength conversion material layer 22 on a side of the first dielectric layer 211 away from the photodiode 10;

[0095] like Figure 10 As shown, a second dielectric layer 212 covering the wavelength conversion material layer 22 is formed on the side of the first dielectric layer 211 facing away from the photodiode 10 .

[0096] The first dielectric layer 211 and the second dielectric layer 212 can be formed by deposition processes, respectively. The wavelength conversion material layer 22 can be formed by coating and photolithography processes.

[0097] In some embodiments, forming the wavelength conversion material layer 22 on the side of the first dielectric layer 211 facing away from the photodiode 10 includes the following steps:

[0098] dissolving core-shell structured nanomaterial particles into an organic solvent comprising polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS) and diethyl carbonate to form a wavelength conversion material solution;

[0099] Disposing a wavelength conversion material solution on a surface of the first dielectric layer 211 facing away from the photodiode 10 and curing the solution to form a wavelength conversion material film layer;

[0100] The wavelength conversion material film layer is patterned to form the wavelength conversion material layer 22 .

[0101] It should be noted that, in other embodiments, the wavelength conversion material film layer can also be prepared using other processes, for example, by introducing rare earth ions (such as Er) during the synthesis of the metal organic framework. 3+ 、Yb 3+ 、Tm 3+ ) as metal nodes or coordination centers, thereby forming a wavelength conversion material film.

[0102] It should be noted that, after step S103 , the method for preparing the optoelectronic device further includes preparing the wiring layer 30 , the first electrical connection structure 51 , the second electrical connection structure 52 , and the control circuit layer 40 .

[0103] The wiring layer 30 may include at least one metal wire layer 31, and the reflective layer is formed on a metal wire layer of the at least one metal wire layer 31. Figure 11 As shown, the reflective layer can be directly formed by the metal wire layer 31. Of course, the reflective layer can also be formed by arranging a reflective material on the metal wire layer 31.

[0104] The first electrical connection structure 51 and the second electrical connection structure 52 can be prepared when the wiring layer 30 is prepared.

[0105] like Figure 13 As shown, after the wiring layer 30 , the first electrical connection structure 51 and the second electrical connection structure 52 are prepared, a control circuit layer 40 may be provided on a side of the wiring layer 30 away from the photodiode 10 .

[0106] It should also be noted that in some other embodiments, the photodiode 10 further includes a light-trapping structure 16, an anti-reflection layer 17, and a lens layer 18 located on the light-incident side 1001 of the substrate layer 11. The fabrication method further includes sequentially forming the light-trapping structure 16, the anti-reflection layer 17, and the lens layer 18. This step may be performed after step S105.

[0107] The photodiode may also include only one or two of the light trapping structure 16, the anti-reflection layer 17, and the lens layer 18. Accordingly, the manufacturing method further includes forming one or two of the light trapping structure 16, the anti-reflection layer 17, and the lens layer 18.

[0108] It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the accompanying drawings. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application shall be included in the scope of protection of this application.

Claims

1. A photoelectric device, characterized in that: The photovoltaic device includes at least one photovoltaic device unit, each photovoltaic device unit including: A photodiode having a light incident side and a backlight side facing away from each other; a wavelength conversion layer, located on the backlight side of the photodiode, the wavelength conversion layer being configured to convert first-type photons incident from the light-incident side of the photodiode and incident on the wavelength conversion layer through the photodiode into second-type photons, wherein the wavelength of the second-type photons is smaller than the wavelength of the first-type photons; The reflective layer is located on a side of the wavelength conversion layer away from the photodiode, and is used to reflect the second type of photons toward the photodiode.

2. The optoelectronic device according to claim 1, wherein The wavelength conversion layer includes a patterned wavelength conversion material layer and a dielectric layer covering the wavelength conversion material layer.

3. The optoelectronic device according to claim 2, wherein The wavelength conversion material layer is made of a mixed material including one of polymethyl methacrylate, polydimethylsiloxane and diethyl carbonate and a nanometer material with a core-shell structure.

4. The optoelectronic device according to claim 1, wherein The wavelength of the second type of photons is less than or equal to 1100 nm.

5. The optoelectronic device according to claim 1, wherein: The optoelectronic device includes a wiring layer located on a side of the wavelength conversion layer away from the photodiode, the wiring layer has at least one metal wire layer, and the reflective layer is formed on a metal wire layer of the at least one metal wire layer.

6. The optoelectronic device according to any one of claims 1 to 5, wherein: The photodiode comprises: a substrate layer having a first surface located on a backlight side; a first well layer located in the substrate layer and exposed from a first surface of the substrate layer; the first well layer has a first conductivity type; a second well layer located in the substrate layer and stacked on a side of the first well layer facing away from the first surface; the second well layer has a second conductivity type; The contact electrodes are spaced apart and arranged at the periphery of the first well layer and the second well layer, and the contact electrodes have a second conductivity type.

7. The optoelectronic device according to claim 6, wherein For the optoelectronic device having a wiring layer, the optoelectronic device further includes: a control circuit layer, located on a side of the routing layer away from the photodiode, comprising a voltage input circuit and a signal acquisition circuit; a first electrical connection structure, penetrating the wavelength conversion layer and the routing layer, and configured to connect the first well layer and the signal acquisition circuit; The second electrical connection structure penetrates the wavelength conversion layer and the wiring layer, and is used to connect the contact electrode and the voltage input circuit.

8. The optoelectronic device according to claim 6, wherein The substrate layer is a silicon substrate; the photodiode is a silicon-based single-photon avalanche diode.

9. A method for preparing a photoelectric device, characterized in that: The method for preparing the optoelectronic device comprises: forming a photodiode having a light incident side and a light-repelling side facing away from each other; forming a wavelength conversion layer, the wavelength conversion layer being located on a backlight side of the photodiode, the wavelength conversion layer being configured to convert a first type of photon incident from a light incident side of the photodiode and incident on the wavelength conversion layer through the photodiode into a second type of photon, wherein the wavelength of the second type of photon is smaller than the wavelength of the first type of photon; A reflective layer is formed, where the reflective layer is located on a side of the wavelength conversion layer away from the photodiode, and is configured to reflect the second type of photons toward the photodiode.

10. The method for preparing a photoelectric device according to claim 9, wherein: The forming of the wavelength conversion layer comprises: forming a first dielectric layer on the backlight side of the photodiode; forming a wavelength conversion material layer on a side of the first dielectric layer facing away from the photodiode; A second dielectric layer covering the wavelength conversion material layer is formed on a side of the first dielectric layer away from the photodiode.

11. The method for preparing a photoelectric device according to claim 10, wherein: The forming of a wavelength conversion material layer on a side of the first dielectric layer facing away from the photodiode comprises: dissolving core-shell structured nanomaterial particles into an organic solvent comprising polymethyl methacrylate, polydimethylsiloxane and diethyl carbonate to form a wavelength conversion material solution; placing a wavelength conversion material solution on a surface of the first dielectric layer facing away from the photodiode, and curing the solution to form a wavelength conversion material film layer; The wavelength conversion material film layer is patterned to form the wavelength conversion material layer.

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