Base and showerhead comprising dual plenum and baffle device

Abstract

The base comprises a supporting shaft and a body. The support shaft includes a supply channel that receives a process fluid. The body includes a stack of layers that receive the process fluid, dispense the process fluid within the range of the body, and direct the process fluid from the susceptor toward the substrate being processed. The body includes a distribution layer including a first plenum and a channel. A channel extends radially from the supply channel to the first plenum chamber and supplies a process fluid from the supply channel to the first plenum chamber. The body further comprises a baffle layer and a cross-drilled layer. The baffle layer includes a first passage extending from the first plenum to the second plenum. The cross-bore layer includes a second passage and a second plenum. The first plenum, the first passage, and the second plenum capture particles and / or increase flow rate uniformity of process fluid to the second plurality of passages.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. Provisional Application No. 63 / 444,724, filed on February 10, 2023. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a gas distribution pedestal and showerhead for a substrate processing system. Background Art

[0003] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors to the extent described in this background section and aspects of the specification that were not determined to be prior art at the time the application was filed are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] Substrate processing systems can be used to perform deposition, etching, and / or other processing of substrates such as semiconductor wafers. During processing, the substrate is disposed on a substrate support in a processing chamber of the substrate processing system. A gas mixture including one or more precursors is introduced into the processing chamber, and a plasma can be ignited to activate a chemical reaction.

[0005] The thin film layer can be deposited on the substrate using a deposition process such as plasma enhanced chemical vapor deposition (PECVD). PECVD involves introducing a gas (or vapor) precursor into a process chamber. Other process and cleaning gases may also be introduced. The gas can be delivered to the process chamber via a gas distribution pedestal or a showerhead. As an example, the substrate can be supported on a gas distribution pedestal, and the gas is received by the pedestal and distributed to the back side of the substrate for depositing the film layer on the back side of the substrate. As another example, the substrate can be supported by a non-gas distribution pedestal and can receive the gas at the showerhead. The showerhead then distributes the gas over and across the substrate to deposit the film layer on the top surface of the substrate. Summary of the Invention

[0006] A susceptor is disclosed, comprising a support shaft and a body. The support shaft comprises a supply channel configured to receive a process fluid. The body comprises a layered member configured to receive the process fluid from the supply channel, distribute the process fluid onto the body, and direct the process fluid from the susceptor toward a substrate being processed. The body comprises a distribution layer. The distribution layer comprises a plenum and channels. The channels extend from the supply channel to the plenum. Each of the channels is configured to radially reduce flow velocity along the corresponding channel, such that a first flow velocity at the inlet of the corresponding channel is greater than a second flow velocity at the outlet of the corresponding channel.

[0007] In other features, the total cross-sectional flow area of ​​the channel increases radially such that a first total cross-sectional flow area of ​​an inlet of the channel is less than a second total cross-sectional flow area of ​​an outlet of the channel.

[0008] In other features, the inner diameter of each respective one of the channels increases radially. In other features, each of the channels diverts a portion of the process fluid to at least one adjacent channel. The at least one adjacent channel outputs the portion of the process fluid to the plenum.

[0009] In other features, each of the channels includes a first portion having a first inner diameter and a second portion having a second inner diameter that is larger than the first inner diameter.

[0010] In other features, each of the channels diverts the portion of the process fluid to two adjacent channels. In other features, each of the two adjacent channels passes through one of the other adjacent channels.

[0011] In other features, each flow path from the supply channel to the plenum includes an inlet for a corresponding one of the channels and five outlets, the five outlets including the outlet of the corresponding channel and four outlets of an adjacent channel that receive fluid from the corresponding channel. In other features, the normalized volume flow rates at the outlets of the channels are the same or differ from each other by no more than a predetermined percentage.

[0012] In other features, the distribution layer includes pairs of branches extending from the channels such that a portion of each of the channels and the corresponding pair of branches are in a "Y" configuration.

[0013] In other features, the normalized volumetric flow rates at the outputs of the plurality of paired branches are the same or differ from each other by no more than a predetermined percentage. In other features, the normalized volumetric flow rate at the output of each of the channels and the normalized volumetric flow rate at the output of each of the branches are the same or differ from each other by no more than a predetermined percentage.

[0014] Among other features, at least one of: i) the mass output flow rates of the channels are the same or differ from each other by no more than a predetermined percentage, and ii) the volumetric output flow rates of the channels are the same or differ from each other by no more than a predetermined percentage.

[0015] In other features, the distribution layer includes an expansion junction and a cross-junction. Each channel diverts gas to two adjacent channels. Every two adjacent channels of each channel pass through a cross-junction and are fluidically coupled to two other adjacent channels. In other features, the mass output flow rate of the two adjacent channels of each channel is the same or differs from each other by no more than a predetermined percentage.

[0016] Among other features, a pedestal is disclosed, comprising a support shaft and a body. The support shaft comprises a supply channel configured to receive a process fluid. The body comprises a plurality of layers configured to receive the process fluid from the supply channel, distribute the process fluid to the body, and direct the process fluid from the pedestal toward a substrate being processed. The body comprises a distribution layer. The distribution layer comprises a plenum and a first channel. The first channel extends from the supply channel to the plenum. Each of the first channels diverts a portion of the process fluid to one or more second channels, which extend from the first channel to the plenum.

[0017] In other features, each respective one of the first channels is configured to reduce flow velocity radially along the respective channel such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0018] In other features, the total cross-sectional flow area of ​​the first passage increases radially such that a first total cross-sectional flow area of ​​an inlet of the first passage is less than a second total cross-sectional flow area of ​​an outlet of the passage.

[0019] Among other features, a showerhead is disclosed, comprising a stem and a body. The stem comprises a supply channel configured to receive a process fluid. The body comprises a layered member configured to receive the process fluid from the supply channel, distribute the process fluid to the body, and direct the process fluid from the showerhead toward a substrate being processed. The body comprises a distribution layer. The distribution layer comprises a plenum and a channel. A channel extends from the supply channel to the plenum. Each respective channel in the channel is configured to radially reduce flow velocity along the respective channel, such that a first flow velocity at the inlet of the respective channel is greater than a second flow velocity at the outlet of the respective channel.

[0020] Among other features, a showerhead is disclosed, comprising a stem and a body. The stem comprises a supply channel configured to receive a process fluid. The body comprises a layered member configured to receive the process fluid from the supply channel, distribute the process fluid to the body, and direct the process fluid from the showerhead toward a substrate being processed, the body comprising a distribution layer. The distribution layer comprises a plenum and a first channel extending from the supply channel to the plenum. Each of the first channels diverts a portion of the process fluid to one or more second channels. The second channels extend from the first channels to the plenum.

[0021] Among other features, a base is disclosed that includes a support shaft and a body. The support shaft includes a supply channel configured to receive a process fluid. The body includes a layered member configured to receive the process fluid from the supply channel, distribute the process fluid onto the body, and direct the process fluid from the base toward a substrate being processed. The body includes a distribution layer that includes a first plenum and a channel. A channel extends radially from the supply channel to the first plenum and supplies the process fluid from the supply channel to the first plenum. The body further includes a baffle layer and a cross-drilled layer. The baffle layer includes a first passage extending from the first plenum to a second plenum. The cross-drilled layer includes a second passage and the second plenum. The first plenum, the first passage, and the second plenum are configured to at least one of: i) capture particles and ii) increase the flow rate uniformity of the process fluid flowing to the second passage.

[0022] In other features, the first plenum is annular. The first passage extends vertically from the first plenum to the second plenum. The second plenum is annular. In other features, the first passage is located radially inward of the radially outermost wall of the first plenum.

[0023] In other features, the first plenum includes a recess that is annularly aligned with the outlet of the channel. In other features, the channel includes a main channel and a branch extending from the main channel to the first plenum. The outlet of the main channel and the outlet of the branch are each annularly aligned with the recess.

[0024] In other features, each of the first passageways has a cross-sectional width measured in a radial direction that is less than a radial width of the first plenum and a radial width of the second plenum, also measured in the radial direction.

[0025] In other features, the first passage is annularly offset from an outlet of the channel. In other features, the process fluid changes direction of flow six times after exiting the channel and before exiting the second plenum.

[0026] In other features, the cross-drilled layer includes a second passage configured to receive fluid from the second plenum. In other features, the first passage extends vertically. The second passage extends horizontally through the cross-drilled layer. In other features, the first plenum redirects the process fluid multiple times. The baffle layer redirects the process fluid multiple times.

[0027] In other features, the radially outermost wall of the first passageway is laterally aligned with the outermost wall of the second plenum.The radially outermost wall of the first plenum is radially outward of the outermost wall of the second plenum and the outermost wall of the first passageway.

[0028] In other features, the distribution layer includes: pairs of channels extending from each of the channels to the first plenum; and the total number of first passages is equal to the sum of the total number of output ends of the channels and the total number of output ends of the plurality of pairs of channels extending from each of the channels.

[0029] In other features, each respective one of the channels is configured to reduce flow velocity radially along the respective channel such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0030] Among other features, a showerhead is disclosed and includes a stem and a body. The stem includes a supply channel configured to receive a process fluid. The body includes a layer configured to receive the process fluid from the supply channel, distribute the process fluid onto the body, and direct the process fluid from the showerhead toward a substrate being processed. The body includes a distribution layer including a first plenum and a channel extending radially from the supply channel to the first plenum and supplying the process fluid from the supply channel to the first plenum. The body further includes a baffle layer including a first passage extending from the first plenum to a second plenum; and a cross-drilled layer including a second passage and the second plenum. The first plenum, the first passage, and the second plenum are configured to at least one of: i) capture particles, and ii) increase the flow rate uniformity of the process fluid flowing to the second passage.

[0031] In other features, the first plenum is annular. The first passage extends vertically from the first plenum to the second plenum. The second plenum is annular.

[0032] In other features, the first passageway is located radially inward of a radially outermost wall of the first plenum. In other features, the first plenum includes a recess annularly aligned with an outlet of the passageway.

[0033] In other features, the channel includes a main channel and a branch extending from the main channel to the first plenum chamber. The outlet of the main channel and the outlet of the branch are respectively aligned with the recess in an annular manner.

[0034] In other features, each of the first passageways has a cross-sectional width measured in a radial direction that is less than a radial width of the first plenum and a radial width of the second plenum, also measured in the radial direction.

[0035] In other features, the first passage is annularly offset from an output end of the channel. In other features, the process fluid changes direction of flow six times after exiting the channel and before exiting the second plenum.

[0036] In other features, the cross-drilled layer includes a second passage configured to receive the process fluid from the second plenum. In other features, the first passage extends vertically. The second passage extends horizontally through the cross-drilled layer.

[0037] In other features, the first plenum changes the flow direction of the process fluid multiple times.The baffle layer changes the flow direction of the process fluid multiple times.

[0038] In other features, the radially outermost wall of the first passageway is laterally aligned with the outermost wall of the second plenum.The radially outermost wall of the first plenum is radially outward of the outermost wall of the second plenum and the outermost wall of the first passageway.

[0039] In other features, the distribution layer includes: pairs of channels extending from each of the channels to the first plenum; and the total number of first passages is equal to the sum of the total number of output ends of the channels and the total number of output ends of the pairs of channels extending from each of the channels.

[0040] In other features, each respective one of the channels is configured to reduce flow velocity radially along the respective channel such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0041] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0043] Figure 1 is a functional block diagram of an exemplary substrate processing system including a gas distribution pedestal having layers for gas distribution according to the present disclosure;

[0044] Figure 2 yes Figure 1 a side cross-sectional view of a portion of a gas distribution base;

[0045] Figure 3 yes Figure 1 A top cross-sectional view of an exemplary gas distribution layer of a gas distribution pedestal;

[0046] Figure 4 Is displayed in Figure 3 Above the gas distribution layer Figure 1 A top cross-sectional view of an exemplary baffle layer of a gas distribution pedestal;

[0047] Figure 5is a cross-sectional view of another example gas distribution layer according to the present disclosure;

[0048] Figure 6 is a cross-sectional view of another baffle layer according to the present disclosure;

[0049] Figure 7 yes Figure 1 A cross-sectional view of an exemplary cross-drilled layer of a gas distribution base;

[0050] Figure 8 According to the content of this disclosure Figure 2 a close-up perspective view of a portion of an exemplary gas distribution layer;

[0051] Figure 9 is a close-up perspective view of a portion of an outer wall of a plenum chamber of a gas distribution layer according to the present disclosure, showing the depth of one of a plurality of recesses (or indentations) of the outer wall;

[0052] Figure 10 is a cross-sectional view of a processing chamber including a showerhead having a layered member for gas distribution according to the present disclosure;

[0053] Figure 11 yes Figure 10 a cross-sectional view of a portion of a nozzle;

[0054] Figure 12 is a graph of the normalized standard deviation of volume flow rate versus the angle between the inner and outer hubs of the gas distribution layer according to the present disclosure;

[0055] Figure 13 is a top cross-sectional view of the inner hub and outer hub of a gas distribution layer according to the present disclosure;

[0056] Figure 14 is a graph of the normalized standard deviation of volume flow rate versus the ratio of the inner diameter of the inner hub to the outer hub in accordance with the present disclosure.

[0057] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0058] The gas distribution base may include a gas distribution layer, a cross-drilled layer, and an upper gas discharge layer. The gas distribution layer may include gas distribution channels configured, for example, in an 8-spoke or 12-spoke pattern. The gas distribution channels extend from a central vertically extending channel to an outer peripheral plenum. The outer peripheral plenum is annular. Gas is distributed from the central vertically extending channel to the outer peripheral plenum at high speed. From the outer peripheral plenum, gas is directed laterally to the cross-drilled channels of the cross-drilled layer. Gas is then directed from the cross-drilled layer through holes in the upper gas discharge layer to the back side of the substrate.

[0059] Backside particles can be a problem for backside deposition tools. High room temperatures often involve the use of an aluminum (Al) susceptor that is cooled to prevent overheating and excessive particle generation. Due to the high flow rate and the interaction between the nitrogen trifluoride (NF3) gas and the aluminum of the gas distribution susceptor, the hub (or radially extending channels) of the susceptor's gas distribution layer can entrain aluminum fluoride (AlF3) particles. The high flow rate provides momentum for the particles, forming a signature pattern on the backside of the substrate. The signature pattern may be similar to the pattern of the hub.

[0060] Examples described herein include a gas distribution base and a showerhead that include a gas distribution layer having a pattern of gas distribution channels. The flow rate of the gas distribution channels decreases radially from the central supply channel of the gas distribution layer to the outer peripheral plenum of the gas distribution layer. In one embodiment, the flow rate of the gas distribution channels decreases while maintaining the same total gas flow rate. For example, the total flow rate at the center of the gas distribution layer is the same as the total flow rate of the gas distribution channels flowing out of the outer peripheral plenum of the gas distribution layer. The number of gas distribution channels and the inner diameter of the gas distribution channels also increase from the center of the gas distribution layer to the outer peripheral plenum. This increases the total cross-sectional flow area, which reduces the average flow rate out of the gas distribution channels compared to the average flow rate at the center of the gas distribution layer and at the inlet of the gas distribution channels.

[0061] The example prevents the formation of a particle "hub" pattern on the substrate. This pattern improves flow uniformity from the gas distribution layer, and therefore improves flow uniformity from the gas distribution base or showerhead. Flow balance is provided by the disclosed gas distribution channel pattern. The gas distribution pattern includes equally spaced channels that are symmetrical along both the X and Y axes. The pattern includes multiple expansion points and intersections to reduce flow velocity and balance gas pressure in the radially outermost channels. This provides a balanced flow structure for uniform flow output.

[0062] Examples minimize the velocity of the gas flow output by the channels of the gas distribution layer while providing configurations with a reduced number of channel inlets at the centrally located gas supply channel. These configurations are provided for both susceptor and showerhead configurations. Additionally, these configurations include multiple plenums and baffles to capture particles entrained in the gas flowing through the channels. This prevents particles from reaching the substrate being processed and, therefore, from forming features on the substrate.

[0063] Examples provide uniform flow distribution, which is aided by several different aspects of the channel configuration, including: channels with increasing inner diameters in a radial direction along the channels; a configuration of multiple plenum baffles for changing the direction of gas flow multiple times; channel extension connection points having a "Y" configuration; extension connection points having a selected diameter ratio between the inner diameter of the main hub and the inner diameter of the branches of the main hub; and channel cross-connections. The "Y" configuration includes "Y" branches extending from the main hub to reduce the flow velocity in the main hub. The diameter ratio is set to balance the mass flow rate in the outlet of the output channels of the corresponding gas distribution layer. The output channel refers to the main channel and adjacent channels that feed gas to the outer peripheral plenum. The angle of the branches relative to the main hub is also set to balance the mass flow rate. The lengths of different parts of the main hub with different inner diameters are also set to balance the average velocity of the flow out of the output channels. These examples minimize the flow velocity in the output channels and the standard deviation of the mass flow rate between the output channels.

[0064] Although the following examples are primarily described with respect to gas flows, the examples are applicable to other fluids including process liquids.

[0065] Figure 1 An exemplary substrate processing system 100 is shown including a gas distribution pedestal (referred to as a pedestal) 102 having layers 103 for gas distribution. Figure 1 The examples are applicable to PECVD chambers and other substrate processing chambers. A substrate processing system 100 includes a processing chamber 104 that encloses components of the substrate processing system 100. The substrate processing system 100 includes a first electrode 108 and a substrate support, such as a pedestal 102. The pedestal 102 may be implemented as or include a second electrode. As an example, the first electrode 108 may be an upper electrode and the second electrode may be a lower electrode. During processing, a substrate 118 is disposed on the pedestal 102 between the first electrode 108 and the second electrode.

[0066] By way of example only, the first electrode 108 can include a showerhead 124 that can introduce and distribute process gases. As shown, the pedestal 102 can be implemented as a gas distribution pedestal and distribute gas to the back side (or bottom side) of the substrate 118. In one embodiment, the pedestal 102 distributes gas to the back side of the substrate 118, and the showerhead 124 does not distribute gas. In another embodiment, the showerhead 124 distributes gas to the front (or top) side of the substrate 118, and the pedestal does not distribute gas. In yet another embodiment, the showerhead 124 distributes gas to the top side of the substrate, and the pedestal 102 distributes gas to the back side of the substrate 118. The showerhead 124 can be used Figure 10 Instead of a showerhead, it can be configured similarly to base 102, as further described below.

[0067] The showerhead 124 includes a stem 121 that receives a treatment fluid and directs the treatment fluid through the showerhead 124. The fluid is directed out of holes in a faceplate 129 of the showerhead 124 and directed toward the substrate 118. The base 102 includes a support shaft 130 that receives a treatment fluid and directs the treatment fluid through the base 102. The fluid is directed out of holes in a top plate 132 of the base 102 and directed toward the substrate 118. The body of the base 102 can be implemented as a second electrode. Alternatively, the second electrode can be a conductive electrode embedded in a non-conductive portion of the base 102. As another alternative, the base 102 can include a conductive plate that serves as the second electrode.

[0068] When the plasma is in use, a radio frequency (RF) generation system 126 generates an RF voltage and outputs it to the first electrode 108 and / or the second electrode. In some examples, one of the first electrode 108 and the second electrode can be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 126 can include one or more RF voltage generators 128 (e.g., a capacitively coupled plasma RF power generator, a bias RF power generator, and / or other RF power generators), such as an RF voltage generator 128 that generates an RF voltage. The RF voltage is fed to the second electrode and / or the first electrode 108 by one or more matching and distribution networks 131. For example, as shown, the RF voltage generator 128 provides RF and / or bias voltage to the second electrode. The second electrode can alternatively or additionally receive power from another power source (e.g., power source 134). In other examples, the RF voltage can be supplied to the first electrode 108 or the first electrode 108 can be connected to a ground reference.

[0069] The exemplary gas delivery system 140 includes one or more gas sources 144-1, 144-2, ..., 144-N (collectively referred to as gas sources 144), where N is an integer greater than zero. The gas sources 144 supply one or more gases (e.g., precursors, inert gases, etc.) and mixtures thereof. Vaporized precursors may also be used. At least one of the gas sources 144 may include a gas used in the pretreatment process of the present disclosure (e.g., NH3, N2, etc.). The gas sources 144 are connected to a manifold 154 via valves 148-1, 148-2, ..., 148-N (collectively referred to as valves 148) and mass flow controllers 152-1, 152-2, ..., 152-N (collectively referred to as mass flow controllers 152). The output of the manifold 154 is fed to the process chamber 104. By way of example only, the output of the manifold 154 is fed to the susceptor and / or showerhead 124.

[0070] In some examples, an optional ozone generator 156 can be provided between the mass flow controller 152 and the manifold 154. In some examples, the substrate processing system 100 can include a liquid precursor delivery system 158. The liquid precursor delivery system 158 can be incorporated into the gas delivery system 140 as shown, or can be external to the gas delivery system 140. The liquid precursor delivery system 158 is configured to provide precursors that are liquid and / or solid at room temperature via a bubbler, direct liquid injection, vapor extraction, or the like.

[0071] The valve 164 and the pump 168 may be used to exhaust reactants from the process chamber 104. A controller 172 may be used to control various components of the substrate processing system 100. By way of example only, the controller 172 may be used to control the flow of process gases, carrier gases, and precursor gases, the ignition and extinguishing of the plasma, the removal of reactants, monitoring of chamber parameters, etc. The controller 172 may receive measurement signals indicative of process parameters, conditions, etc. within the process chamber 104 via one or more sensors 174 disposed throughout the substrate processing system 100.

[0072] The base 102 includes a layered member 103, which may include a gas distribution layer (or plate), a baffle layer (or plate), a cross-drilled layer (or plate), and a top layer (or plate) 132. Examples of gas distribution layers, baffle layers, and cross-drilled layers are shown in FIG. Figure 2-7 The ring portion 170 can support the substrate 118 above the roof layer 132 to provide a gap between the back side of the substrate 118 and the top surface of the roof layer 132 .

[0073] Figure 2 Shows Figure 12. Portion 200 of gas distribution base 102. Portion 200 includes gas distribution layer 202, baffle layer 204, cross-drilled layer 206, and top layer 208. Gas distribution layer 202 has a pattern of gas distribution channels (also called "hubs"), some of which (designated channels 210) are shown in dashed lines to illustrate gas flow. Channels 210 do not overlap with vertical gas passages ( Figure 2 Two exemplary passages 212 are shown in FIG. 3 ) aligned annularly, as shown in FIG. Figure 3 The diagram is better shown in Figure 2 and is therefore shown with a dotted line.

[0074] The gas distribution layer 202 includes a pattern of gas distribution channels, an example of which is shown in FIG. Figure 3 and Figure 5 214 . The gas distribution channels have a radially decreasing flow rate due to: an increase in the inner diameter of the channels; an increase in the number of channels; and diffusion of gas from a smaller number of channels to a larger number of channels. The structure of the gas distribution layer 202 balances the pressure in the channels and evenly distributes the gas to the outlets of the channels (e.g., outlet 214). The outlets of the channels output the gas to the first plenum 216. The plenum 216 is annular and distributes the gas to the vertical passages (e.g., passage 212) of the baffle layer 204. The vertical passages (also referred to as channels) are radially offset inward from the outermost portion (or concave wall) of the first plenum 216 and are annularly offset from the outlets of the channels.

[0075] The gas flows radially through the passage to the outermost portion of the first plenum 216, turns and flows annularly toward the recess ( Figure 8 206 , which directs the gas radially inward. The second plenum 218 directs the gas radially inward to the cross-drilled passages in the cross-drilled layer 206 , which direct the gas upward and out of the holes 228 in the top layer 208 . This directs the gas toward the back side of the substrate. An example of a cross-drilled passage is shown in FIG. Figure 7 The outer walls and vertical passageways of the plenum chambers 216, 218 are defined by one or more outer annular members (one outer annular member 219 is shown).

[0076] Figure 1 The base 102 and / or Figure 2The portion 200 may include multiple layers and / or plates. In one embodiment, the base 102 and / or portion 200 are formed as a single body. The layers 202, 204, 206, 208 and the outer annular member 219 may be integrally formed as a single component or multiple components. In one embodiment, the layers 202, 204, 206, 208 are corresponding stacked plates.

[0077] Figure 2 , gas channel 210 includes an inlet portion 210A and an outlet portion 210B. Gas (or fluid) flow is represented by dashed arrows. Inlet portion 210A extends radially from vertical supply channel 230 to outlet portion 210B. The inner diameter of outlet portion 210B is larger than the inner diameter of inlet portion 210A. Although shown as transitioning between two different inner diameters, channel 210 and / or other channels of gas distribution layer 202 may transition between two different inner diameters multiple times. The further radially outward the location at which the inner diameter is measured, the larger the inner diameter size.

[0078] The baffle layer 204 includes an inner annular member and an outer annular member (eg, Figure 4 The vertical passages (e.g., passage 212 and others) defined by the members 402, 404) are collectively referred to as baffles. The vertical passages extend vertically and fluidically connect the first plenum 216 and the second plenum 218. An example of a baffle layer 204 is shown in FIG. Figure 3 and Figure 6 The cross-drilled layer 206 receives gas from the second plenum 218, which is also annular. The cross-drilled passages in the cross-drilled layer 206 redirect the gas to the holes 228.

[0079] Due to the two plenums 216, 218, the airflow has four direction changes, and due to the baffle layer 204 and its recessed position relative to the first plenum 216, the airflow has two direction changes. The configuration of the plenums 216, 218 and the vertical passage (e.g., passage 212) therefore provides six direction changes of the airflow and acts as a particle trap. Particles can be captured, for example, in the first plenum 216, the vertical passage and / or the second plenum 218. Any particles entrained in the gas are captured in the plenums 216, 218. This prevents particles from being directed out of the top layer 208 and reaching the substrate. This provides a trap for collecting any particles that may originate from the channel wall and / or the upstream source of the channel 210. The plenums 216, 218 and the baffles eliminate any directionality caused by the passage upstream of the first plenum 216 and increase uniform gas distribution.

[0080] The cross-sectional width W1 of each vertical passage (e.g., passage 212) is less than the cross-sectional width W2 of the second plenum 218. The cross-sectional width W2 is less than the cross-sectional width W3 of the first plenum 216. The outermost wall 240 of each vertical passage is radially aligned with the outermost wall 242 of the second plenum 218. The outermost walls 240, 242 are located radially inward of the radial outer wall 244 of the first plenum 216. The radial outer wall 244 may have recesses (or notches) spaced equally along the radial outermost wall 244 and annularly aligned with the passages (e.g., passage 210). This will refer to Figure 8 Further shown and described.

[0081] Although each of the examples below includes a specific number of main channels, adjacent channels (or branches), extended connection points, cross-connection points, and vertical passages, a different number of main channels, adjacent channels (or branches), extended connection points, cross-connection points, and vertical passages may be included.

[0082] Figure 3 A gas distribution layer 202 is shown that includes a pattern of gas distribution channels (referred to as "channels") for distributing gas received via vertical supply channels 230 to first plenum 216. In the illustrated example, eight main channels 300 are shown, each having a first (or inner) portion 300A and a second (or outer) portion 300B. Although each channel 300 is shown as having two portions having different diameters, each channel 300 may have more than two portions having different diameters. Inner portion 300A extends from vertical supply channel 230 to outer portion 300B, and outer portion 300B extends from inner portion 300A to first plenum 216. The inner diameter of outer portion 300B is greater than the inner diameter of inner portion 300A. As a result, the total cross-sectional flow area of ​​the main channels 300 increases radially, such that a first total cross-sectional flow area at the inlet of the main channels 300 is less than a second total cross-sectional flow area at the outlet of the main channels 300. The total cross-sectional flow area of ​​the inlet is the sum of the cross-sectional areas of each inlet, depending on the inner diameter of the inlet. The total cross-sectional flow area of ​​the outlet is the sum of the cross-sectional areas of each outlet, depending on the inner diameter of the outlet. The outer portion 300B can be referred to as a counterbore relative to the inner portion 300A. The gas distribution pattern of the gas distribution layer 202 includes equally spaced channels that are symmetrical along both the X-axis and the Y-axis.

[0083] Each of the main channels 300 diverts a portion of the received gas along the inner portion 300A to two adjacent channels 302 at an extension connection point 304. The two adjacent (or outer) channels 302 angle outward from the main (or inner) channel 300 and cross two other adjacent (or outer) channels 302 at a cross connection point 306. The cross connection point 306 is located radially outward of the extension connection point 304. The portions of the adjacent channels 302 located radially inward of the cross connection point 306 are arranged in a star pattern, with eight radially outer points located at the cross connection point 306 and eight radially inner points located at the extension connection point 304. The inner diameter of the adjacent channels 302 can be the same as the inner diameter of the outer portion 300B. The gas distribution layer 202 can include holes 340 for passage of lift pins to lift the substrate from the corresponding susceptor.

[0084] The gas distribution channel (or hub) 300 has a variable and increased inner diameter. Because some gases turn to adjacent channels 302, the number of gas distribution channels increases radially. For example, there are eight channels near the vertical supply channel 230, and there are 24 channels along the periphery of the gas distribution layer 202. The increase in inner diameter and the increase in the number of gas distribution channels reduce the departure speed of gas outflow channels 300, 302. In one embodiment, the exit speed is reduced by 20% compared with the gas velocity of the gas received by the internal division 300A of the channel 300. The pattern of the hub is designed to be easy to manufacture. For example, the number of channels (or inlet channels) extending from the vertical supply channel 230 is less than the number of channels providing gas to the first plenum 216. A limited number of channels can be arranged around the vertical supply channel 230 and receive gas from the vertical supply channel 230.

[0085] In the example shown, each of the main channels 300 diverts some gas to a first pair of adjacent channels (external gas distribution channels) 302 having a first pair of additional outlets. Another pair of additional outlets is provided by a second pair of adjacent channels 302 that pass through the first pair of adjacent channels 302. In this way, each gas flow path from the vertical supply channel 230 to the first plenum 216 includes an inlet at the vertical supply channel 230 and five outlets at the first plenum 216. This helps balance the pressure in all of the external gas distribution channels (or exhaust channels) (referenced to the outer portion 300B and the adjacent channels 302).

[0086] Compared to a gas distribution layer having eight hubs extending radially from the vertical supply channel to the outer periphery of the gas distribution layer, the number of channels connected to the vertical supply channel 230 and receiving gas directly from the vertical supply channel 230 is reduced. The main channels 300 may each have a varying inner diameter that gradually increases from the vertical supply channel 230 to the first plenum 216.

[0087] The outer portion 300B is located radially outward from the extended connection point 304. The outer portion 300B is annularly arranged between two adjacent channels 302. The number of adjacent channels 302 is twice the number of the outer portion 300B. The inner portion 300A extends radially outward to the extended connection point, and then extends radially outward from there to the outer portion 300B. As shown in the figure, the eight cross-connection points 306 are located radially outward from the eight extended connection points 304.

[0088] In one embodiment, the flow rates out of the output channel (e.g., outer portion 300B and channel 302) are the same or differ from each other by no more than a predetermined range (e.g., 0-3%). In another embodiment, the flow rates out of outer portion 300B are the same or differ from each other by no more than a predetermined range (e.g., 0-3%). In one embodiment, the flow rates out of channel 302 are the same or differ from each other by no more than a first predetermined range (e.g., 0-3%), and are different from the flow rates out of outer portion 300B, which may differ from each other by no more than a second predetermined range (e.g., 0-3%). In one embodiment, the flow rate out of outer portion 300B is 1-5 times greater than the flow rate out of channel 302. Flow rate may refer to volume flow rate or mass flow rate.

[0089] Figure 4 Shows Figure 2 An example of a baffle layer 204. The baffle layer 204 is shown in FIG. Figure 2 The gas distribution layer 202 has a pattern of gas distribution channels 300, 302 shown by dashed hidden lines. The baffle layer 204 includes vertical passages (some of which are designated as 400) that include Figure 2 The vertical passage 212 is located radially outside the channels 300, 302 of the gas distribution layer 202; is defined by the inner annular member 402 and the outer annular member 404; and is annularly offset from the outlet of the channels 300, 302, so that the gas needs to change from flowing in a radial direction to flowing in an annular direction to pass through the vertical passage.

[0090] Figure 5 Another example gas distribution layer 500 is shown, which is similar to Figure 3 The gas distribution layer 202 may have a diameter of 200, but may have channels and portions thereof of different lengths and different angles between adjacent channels. Figure 3 The diameters of the gas distribution layers 202 may be the same or different.

[0091] The gas distribution layer 500 includes a pattern of gas distribution channels (also referred to as "channels") for distributing gas received via the vertical supply channels 501 to the first plenum 503. In the example shown, eight main channels 504 are shown having a first (or inner) portion 504A and a second (or outer) portion 504B. The inner portion 504A extends from the vertical supply channels 501 to the outer portion 504B, and the outer portion 504B extends from the inner portion 504A to the first plenum 503. The inner diameter of the outer portion 504B is greater than the inner diameter of the inner portion 504A. As a result, the total cross-sectional flow area of ​​the main channels 504 increases radially, such that the first total cross-sectional flow area of ​​the inlet of the main channels 504 is less than the second total cross-sectional flow area of ​​the outlet of the main channels 504. The total cross-sectional flow area of ​​the inlet is the sum of the cross-sectional areas of each inlet, depending on the inner diameter of the inlet. The total cross-sectional flow area of ​​the outlet is the sum of the cross-sectional areas of each outlet, depending on the inner diameter of the outlet. The outer portion 504B may be referred to as a counterbore relative to the inner portion 504 A. The gas distribution pattern of the gas distribution layer 500 includes equally spaced channels that present a pattern that is symmetrical along both the X-axis and the Y-axis.

[0092] Each of the main channels 504 diverts a portion of the received gas along the inner portion 504A to two adjacent channels 506 at an extension junction 508. The two adjacent (or outer) channels 506 angle outward from the main (or inner) channel 504 and intersect with two other adjacent (or outer) channels 506 at an intersection junction 510. The intersection junction 510 is located radially outward of the extension junction 508. The portions of the adjacent channels 506 located radially inward of the intersection junction 510 are arranged in a star pattern having eight points located at the intersection junction 510. The inner diameter of the adjacent channels 506 can be the same as the inner diameter of the outer portion 504B. The gas distribution layer 500 may include holes (not shown) for passage of lift pins to lift the substrate from the corresponding susceptor.

[0093] The gas distribution channel (or hub) 504 has a varying and increasing inner diameter. Because some gas is diverted to the adjacent channel 506, the number of gas distribution channels increases radially. For example, there are eight channels near the vertical supply channel 501, and there are twenty-four channels along the periphery of the gas distribution layer 500. The increase in inner diameter and the increase in the number of gas distribution channels reduce the departure speed of gas outflow channels 504, 506. The pattern of the hub is designed to be easy to manufacture. For example, the number of channels (or inlet channels) extending from the vertical supply channel 501 is less than the number of channels providing gas to the first plenum 503. A limited number of channels can be arranged around the vertical supply channel 501 and receive gas from the vertical supply channel 501.

[0094] In the example shown, each of the main channels 504 diverts some gas to a first pair of adjacent channels (external gas distribution channels) 506 having a first pair of additional outlets. Another pair of additional outlets is provided by a second pair of adjacent channels 506 that pass through the first pair of adjacent channels 506. In this way, each gas flow path from the vertical supply channel 501 to the first plenum 503 includes an inlet at the vertical supply channel 501 and five outlets at the first plenum 503. This helps balance the pressure in all of the external gas distribution channels (or exhaust channels) (referenced to the outer portion 504B and the adjacent channels 506).

[0095] Compared to a gas distribution layer having eight hubs extending radially from the vertical supply channel to the outer periphery of the gas distribution layer, the number of channels connected to the vertical supply channel 501 and receiving gas directly from the vertical supply channel 501 is reduced. The main channels 504 may each have a varying inner diameter that gradually increases from the vertical supply channel 501 to the first plenum 503.

[0096] Outer portion 504B is located radially outward from extended connection point 508. Outer portion 504B is annularly disposed between two adjacent channels 506. The number of adjacent channels 506 is twice the number of outer portions 504B. Inner portion 504A extends radially outward to the extended connection point, and then extends radially outward from there to outer portion 504B. As shown in the figure, eight cross-connection points 510 are located radially outward from the eight extended connection points 508.

[0097] In one embodiment, the flow rates out of the output channels (e.g., outer portion 504B and channel 506) are the same or differ from each other by no more than a predetermined range. In another embodiment, the flow rates out of outer portion 504B are the same or differ from each other by no more than a predetermined range. In one embodiment, the flow rates out of channel 506 are the same or differ from each other by no more than a predetermined range and are different from the flow rate out of outer portion 504B.

[0098] In one embodiment, the flow rates out of the output channel (e.g., outer portion 504B and channel 506) are the same or differ from each other by no more than a predetermined range (e.g., 0-5%). In another embodiment, the flow rates out of outer portion 504B are the same or differ from each other by no more than a predetermined range (e.g., 0-5%). In one embodiment, the flow rates out of channel 506 are the same or differ from each other by no more than a first predetermined range (e.g., 0-5%), and are different from the flow rates out of outer portion 504B, which may differ from each other by no more than a second predetermined range (e.g., 0-5%). In one embodiment, the flow rate out of outer portion 504B is 1-5 times greater than the flow rate out of channel 506. Flow rate may refer to volume flow rate or mass flow rate.

[0099] Figure 6 Shows the corresponding Figure 5 Another baffle layer 600 of the gas distribution layer 500. The baffle layer 600 includes vertical passages (some of which are designated as 602). The vertical passages are located Figure 5 The gas distribution layer 500 is radially outside the channels 504, 506 and annularly offset from the outlets of the channels 504, 506, so that the gas needs to switch from flowing in a radial direction to flowing in an annular direction to pass through the vertical passage.

[0100] Figure 7 Shows Figure 1-2 1. The cross-drilled layer 206 of the gas distribution base 102 is shown in FIG. The cross-drilled layer 206 includes fluidly coupled passages (some of which are designated 700) and directs gas received from the second plenum 218 to the second plenum. Figure 2 The channels are created by a plurality of pillars (some of which are designated 702) evenly distributed across the cross-drilled layer 206. The gas flows around the pillars and then upwards and out through the holes 228. The pillars are laterally offset from the holes 228. The plenum 218 receives gas from the Figure 4 The vertical passage 400 of gas.

[0101] Figure 8 Shows Figure 2 800 of an example gas distribution layer 202. Portion 800 includes a hub 804 (e.g., Figure 3 302) which radially outputs gas to the first plenum 216, as indicated by arrows 810. The outer wall 244 of the plenum 216 includes a recess (or notch) 812 that is annularly aligned with the output end of the hub. The gas flow to the recess 812 turns and flows around the annular outer edge of the recess 812 of the corresponding baffle, as indicated by arrows 814. The gas then changes direction and is directed upward and out of the vertical passage (e.g., Figure 2 and 4 212 and 400) to a second plenum above the baffle layer (an example of which is shown in FIG. Figure 2 and 7 ), as indicated by arrow 818.

[0102] Figure 9 Shows Figure 2 A portion 900 of the outer wall 244 of the first plenum 216 is shown showing the radial depth D of one of the recesses 812. The depth D is the distance from the outermost wall 902 of the recess 812 to a non-recessed wall portion 904 of the outer wall 244 of the first plenum 216. The non-recessed wall portion 904 is Figure 2 The vertical passages of the baffle layer 204 (eg, Figure 2 and Figure 4 The outermost walls 240 of the channels 212, 400 are radially aligned.

[0103] Figure 10 A processing chamber 1000 is shown including a showerhead 1002 and a pedestal 1004. The showerhead 1002 includes a layer 1006 for gas distribution. The layer 1006 is configured to Figure 1 The layers 103 of the base 102 are similar, but in an inverted configuration to direct the gas to the top side of the substrate. The showerhead 1002 receives the gas, as described above for Figure 1 The nozzle 124 is as described above. Figure 10 An example of a layer 103 is shown. A pedestal 1004 supports a substrate 1010 positioned below the showerhead 1002.

[0104] Figure 11 Shows Figure 10 10. Portion 1100 of showerhead 1002 is shown. Portion 1100 includes gas distribution layer 1102, baffle layer 1104, cross-drilled layer 1106, and bottom layer (or faceplate) 1108. Gas distribution layer 1102 has a pattern of gas distribution channels (also called "hubs"), some of which (designated channels 1110) are shown in dashed lines to illustrate gas flow. Channels 1110 are not aligned with vertical gas passages ( Figure 11 Two example passages 1112 are shown in FIG. 1 and FIG. 2 are annularly aligned. Channels 1110 and passages 1112 may be aligned with Figure 2-6 The channels and pathways are similarly configured and set up.

[0105] The gas distribution layer 1102 includes a pattern of gas distribution channels, an example of which is shown in FIG. Figure 3 and Figure 5 11. The gas distribution channels have a radially decreasing flow rate due to the following reasons: the inner diameter of the channels increases; the number of channels increases; and the diffusion of gas from a smaller number of channels to a larger number of channels. The structure of the gas distribution layer 1102 balances the pressure in the channels and evenly distributes the gas to the outlets of the channels (e.g., outlet 1114). The outlets of the channels output the gas to the first plenum 1116. The plenum 1116 is annular and distributes the gas to the vertical passages (e.g., passage 1112) of the baffle layer 1104. The vertical passages (also called channels) are radially offset inward from the outermost portion (or concave wall) of the first plenum 1116 and are annularly offset from the outlets of the channels.

[0106] The gas flows radially through the channel to the outermost portion of the first plenum 1116, turns and flows annularly toward the notch of the first plenum 1116, turns back and flows annularly inward to go around the edge of the notch, then turns again to flow annularly toward the area below the entrance to the vertical passage, and then turns down through the vertical passage. The gas flow arrows do not show that the gas flows annularly from a position near the edge of the notch to the area above the vertical passage. This causes the gas to turn five times in order to pass through the vertical passage. From the vertical passage, the gas is directed to the second plenum 1118 in the cross-drilled layer 1106. The second plenum 1118 directs the gas radially inward to the cross-drilled passage in the cross-drilled layer 1106, which directs the gas downward and out of the holes 1128 in the bottom layer 1108. This directs the gas toward the top side of the substrate. An example of a cross-drilled passage is shown in FIG. Figure 7 The outer walls and vertical passages of the plenum chambers 1116 and 1118 are defined by one or more outer annular members (one outer annular member 1119 is shown). The outer annular member 1119 may be of unitary construction or may be formed from a plurality of annular members.

[0107] Figure 10 The nozzle 1002 and / or Figure 11 The portion 1100 may include multiple layers and / or plates. In one embodiment, the showerhead 1002 and / or portion 1100 are formed as a single body. The layers 1102, 1104, 1106, 1108 and the outer annular member 1119 may be integrally formed as a single component or as multiple components. In one embodiment, the layers 1102, 1104, 1106, 1108 are individually stacked plates.

[0108] Figure 11 In FIG. 1 , gas channel 1110 includes an inlet portion 1110A and an outlet portion 1110B. Inlet portion 1110A extends radially from vertical supply channel 1120 to outlet portion 1110B. Vertical supply channel 1120 extends through shaft 1122 of the showerhead and into gas distribution layer 1102. The inner diameter of outlet portion 1110B is larger than the inner diameter of inlet portion 1110A. Although shown as transitioning between two different inner diameters, channel 1110 and / or other channels in gas distribution layer 1102 may transition between two different inner diameters multiple times. The further radially outward the location at which the inner diameter is measured, the larger the inner diameter size.

[0109] Baffle layer 1104 includes vertical passages (eg, passage 1112 and others) and inner and outer annular members (eg, Figure 4 The vertical passage extends vertically and fluidically connects the first plenum 1116 and the second plenum 1118. An example of a baffle layer 1104 is shown in FIG. Figure 3 and Figure 6The cross-drilled layer 1106 receives gas from a second plenum 1118, which is also annular. The cross-drilled passages in the cross-drilled layer redirect the gas to holes 1128.

[0110] Due to the two plenums 1116, 1118, the airflow has four direction changes, and due to the baffle layer 1104 and its recessed position relative to the first plenum 1116, the airflow has two direction changes. The configuration of the plenums 1116, 1118 and the vertical passage (e.g., passage 1112) therefore provides six direction changes of the airflow and acts as a particle trap. Particles can be captured, for example, in the first plenum 1116, the vertical passage and / or the second plenum 1118. Any particles entrained in the gas are captured in the plenums 1116, 1118. This prevents particles from being guided out of the bottom layer 1108 and reaching the substrate. This provides a trap for collecting any particles that may originate from the channel wall and / or the upstream source of the channel. The plenums 1116, 1118 and the baffles eliminate any directionality and increase uniform gas distribution.

[0111] Figure 12 A graph showing the normalized standard deviation (STD) of the volume flow rate Q versus the angle θ1 between the inner and outer hubs of the gas distribution layer is shown. The normalized standard deviation STD of the volume flow rate Q is unitless (ul). Figure 13 An example inner (primary) hub 1300 and an example outer (adjacent) hub 1302 of the gas distribution layer are shown. This represents Figure 3 and Figure 5 13. The outer hub 1302 extends adjacent to the inner hub 1300. The configuration shown includes an extended connection point 1304. The inner hub 1300 diverts some of the gas received from the vertical supply channel 1306 to the adjacent hub 1302. This is similar to, for example, Figure 3 The main channel 300 and the adjacent channel 302 and Figure 5 The main channel 504 and adjacent channels 506 are similarly configured. Angle θ1 is the angle between each adjacent (or outer) channel 1302 and a line 1310 extending perpendicular to the inner channel 1300. Angle θ2 is the angle between each outer channel 1302 and the inner channel 1300. The inner diameters of the inner channel 1300 and the outer channel 1302 are designated D1, D2, and D3.

[0112] The normalized volume flow rate is a function of the angle θ1. Increasing the angle θ1 creates more parallel flow paths and thus improves the flow balance between each hub. Increasing θ1 reduces the flow imbalance between the inner and outer channels, as Figure 12 As shown in the graph of FIG. As an example, θ1 can be 45°-60°. In one embodiment, θ1 is 50°-55°.

[0113] Normalized volume flow rate Q n,归一化 Equal to the flow rate Q through a channel n Divide by the flow rate Qinner through the inner channel 1300 in the portion between the outer channels 1302. As an example, a normalized volume flow rate Qinner may be determined for each of the channels 1300, 1302. n,归一化 The standard deviation can be expressed as a percentage. For example, if the flow rate through inner channel 1300 is 1 (because it is divided by itself), and the flow rate through outer channel 1302 is 0.34, then the outer flow rate is 34% of the flow rate through inner channel 1302. This allows comparison of the flow rates of the various channels of the gas distribution layer.

[0114] As an example, if for the first test, the volume flow rate of the inner channel 1300 is 3.53×10 -5 Cubic meters (m 3 / s) and the flow rate of each of the outer channels 1302 is 1.28×10 -6 m 3 / s, then if for the second test, the flow rate of the inner channel 1300 is 4.38×10 -5 m 3 / s and the flow rate of the outer channel 1302 is 9.63×10 -6 m 3 / s, it is challenging to compare the two tests. Instead, by normalizing the flow rate, the first test has a normalized volume flow rate Q of 1 for the inner channel 1300 n,归一化 , and a normalized volume flow rate Q of 36% (0.36) of the flow rate of the inner channel for each of the outer channels 1302 n,归一化 ; and the second test has a normalized volume flow rate Q of 1 for the inner channel 1300 n,归一化 , and a normalized volume flow rate Q of 22% (0.22) of the flow rate of the inner channel for each of the outer channels 1302 n,归一化 , and now the two tests can be directly compared.

[0115] Figure 14 A graph showing the normalized STD of volume flow rate versus the ratio of the inner hub to the outer hub's inside diameter. Figure 13 and Figure 14 The inner diameter ratio refers to the inner diameter D2 of the inner hub divided by the inner diameter D1 or D3 of the outer hub. Inner diameter D1 can be equal to inner diameter D3. The normalized volume flow rate is a function of the inner diameter ratio. Increasing the inner diameter of the inner channel (or equivalently, decreasing the inner diameter of the outer channel) increases the flow imbalance between the inner and outer channels. Increasing the inner diameter of the inner channel or decreasing the inner diameter of the outer channel increases the flow imbalance between the inner and outer channels.

[0116] The normalized volume flow rates at the outlets of the main channels of the gas distribution layer can be the same or differ from each other by no more than a predetermined percentage (0-3%). The normalized volume flow rates at the outlets of adjacent channels (or branches of the main channels) can be the same or differ from each other by no more than a predetermined percentage (0-3%). The normalized volume flow rates at the outlets of each main channel and each branch can be the same or differ from each other by no more than a predetermined percentage (0-3%).

[0117] The above examples provide channel patterns with geometries designed to minimize the exit velocity of gas flowing out of the channels and into the outer peripheral plenum. This provides balanced gas flow through the gas distribution layer of the susceptor and / or showerhead structure. These examples also include particle traps to minimize and / or prevent damage to the substrate caused by particles entrained upstream of the plenum.

[0118] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent when studying the drawings, description and appended claims. It should be understood that one or more steps in the method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the embodiments described are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0119] Although the terms first, second, third etc. can be used to describe various elements, layers, passages, expansion connection points, cross connection points, parts and / or equipment in this article, unless otherwise indicated, these elements, layers, passages, expansion connection points, cross connection points, members and / or equipment should not be restricted by these terms.These terms can only be used to distinguish an assembly, layer, passage, expansion connection points, cross connection points, assembly, and / or device from another element, layer, passage, expansion connection points, cross connection points, parts and / or equipment.When using terms such as "first", "second" and other numerical terms in this article, sequence or order are not implied unless the context clearly indicates.Therefore, the first element, layer, passage, expansion connection points, cross connection points, members and / or equipment can be referred to as the second element, layer, passage, expansion connection points, cross connection points, parts and / or equipment without departing from the teaching of exemplary embodiments.

[0120] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0121] In some implementations, the controller is part of a system, which can be part of the examples above. Such a system can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer bases, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller" that can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected or docked to a specific system.

[0122] In a broad sense, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0123] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, review trends or performance standards for multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., process and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0124] Exemplary systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0125] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A base, comprising: a support shaft comprising a supply channel configured to receive a process fluid; and a body comprising a plurality of layers configured to receive the process fluid from the supply channel and distribute the process fluid onto the body and direct the process fluid from the susceptor toward a substrate being processed, the body comprising: A distribution layer, comprising: a first plenum chamber, and a plurality of channels extending radially from the supply channel to the first plenum and supplying the process fluid from the supply channel to the first plenum, a baffle layer comprising a first plurality of passages extending from the first plenum to a second plenum, and a cross-drilled layer comprising a second plurality of vias and said second plenum chambers, The first plenum, the first plurality of passages, and the second plenum are configured to at least one of: i) capture particles; and ii) increase flow rate uniformity of the process fluid flowing to the second plurality of passages.

2. The base according to claim 1, wherein: The first plenum chamber is annular; the first plurality of passageways extending vertically from the first plenum to the second plenum; and The second plenum chamber is annular. 3 . The susceptor of claim 1 , wherein the first plurality of passages are located radially inward of a radially outermost wall of the first plenum.

4. The susceptor of claim 1, wherein the first plenum comprises a plurality of recesses annularly aligned with outlets of the plurality of channels.

5. The base according to claim 4, wherein: The plurality of channels include a plurality of main channels and a plurality of branches extending from the plurality of main channels to the first plenum; and The outlets of the plurality of main channels and the outlets of the plurality of branches are respectively aligned in an annular manner with the plurality of recesses.

6. The susceptor of claim 1, wherein the cross-sectional width of each of the first plurality of passages, measured radially, is less than the radial width of the first plenum and the radial width of the second plenum, also measured radially.

7. The susceptor of claim 1, wherein the first plurality of vias are annularly offset from output ends of the plurality of channels.

8. The susceptor of claim 1, wherein the process fluid changes flow direction six times after exiting the plurality of channels and before exiting the second plenum.

9. The susceptor of claim 1, wherein the cross-drilled layer comprises the second plurality of passages configured to receive the process fluid from the second plenum.

10. The base according to claim 1, wherein: The first plurality of passages extend vertically; and The second plurality of vias extend horizontally through the cross-drilled layer.

11. The base according to claim 1 , wherein: The first plenum changes the flow direction of the process fluid multiple times; and The baffle layer changes the flow direction of the process fluid multiple times.

12. The base according to claim 1, wherein: The radially outermost walls of the first plurality of passageways are laterally aligned with the outermost wall of the second plenum; and The radially outermost wall of the first plenum is located radially outward of the outermost wall of the second plenum and the outermost walls of the first plurality of passages.

13. The susceptor of claim 1 , wherein the gas distribution layer comprises: a pair of channels extending from each of the plurality of channels to the first plenum; and The total number of the first plurality of passages is equal to the sum of the total number of output ends of the plurality of channels and the total number of output ends of pairs of channels extending from each of the plurality of channels.

14. The susceptor of claim 1, wherein each respective channel of the plurality of channels is configured to reduce flow velocity radially along the respective channel such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

15. A spray head comprising: a stem portion comprising a supply channel configured to receive a process fluid; and a body comprising a plurality of layers configured to receive the process fluid from the supply channel and distribute the process fluid onto the body and direct the process fluid from the showerhead toward a substrate being processed, the body comprising: A distribution layer, comprising: a first plenum chamber, and a plurality of channels extending radially from the supply channel to the first plenum and supplying the process fluid from the supply channel to the first plenum, a baffle layer comprising a first plurality of passages extending from the first plenum to a second plenum, and a cross-drilled layer comprising a second plurality of vias and said second plenum chambers, The first plenum, the first plurality of passages, and the second plenum are configured to at least one of: i) capture particles; and ii) increase flow rate uniformity of the process fluid flowing to the second plurality of passages.

16. The spray head according to claim 15, wherein: The first plenum chamber is annular; the first plurality of passageways extending vertically from the first plenum to the second plenum; and The second plenum chamber is annular.

17. The showerhead of claim 15, wherein the first plurality of passages are located radially inward of a radially outermost wall of the first plenum.

18. The showerhead of claim 15, wherein the first plenum comprises a plurality of recesses annularly aligned with outlets of the plurality of channels.

19. The spray head according to claim 18, wherein: The plurality of channels include a plurality of main channels and a plurality of branches extending from the plurality of main channels to the first plenum; and The outlets of the plurality of main channels and the outlets of the plurality of branches are respectively aligned in an annular manner with the plurality of recesses.

20. The showerhead of claim 15, wherein a cross-sectional width of each of the first plurality of passages, measured radially, is less than a radial width of the first plenum and a radial width of the second plenum, also measured radially.

21. The showerhead of claim 15, wherein the first plurality of passages are annularly offset from output ends of the plurality of channels.

22. The showerhead of claim 15, wherein the process fluid changes direction six times after exiting the plurality of channels and before exiting the second plenum.

23. The showerhead of claim 15, wherein the cross-drilled layer comprises the second plurality of passages configured to receive the process fluid from the second plenum.

24. The spray head of claim 15, wherein: The first plurality of passages extend vertically; and The second plurality of vias extend horizontally through the cross-drilled layer.

25. The spray head of claim 15, wherein: The first plenum changes the flow direction of the process fluid multiple times; and The baffle layer changes the flow direction of the process fluid multiple times.

26. The showerhead of claim 15, wherein: The radially outermost walls of the first plurality of passageways are laterally aligned with the outermost wall of the second plenum; and The radially outermost wall of the first plenum is located radially outward of the outermost wall of the second plenum and the outermost walls of the first plurality of passages.

27. The showerhead of claim 15, wherein the gas distribution layer comprises: a pair of channels extending from each of the plurality of channels to the first plenum; and The total number of the first plurality of passages is equal to the sum of the total number of output ends of the plurality of channels and the total number of output ends of pairs of channels extending from each of the plurality of channels.

28. The showerhead of claim 15, wherein each respective channel of the plurality of channels is configured to reduce flow velocity radially along the respective channel such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

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