Cleaning system and cleaning method for reaction cavity

Abstract

The invention relates to the technical field of semiconductor processing equipment, in particular to a cleaning system and method for a reaction cavity, and the system comprises a residue detection unit which is arranged in the reaction cavity and is used for detecting the concentration of a deposited by-product on the inner wall of the reaction cavity; the vibration cleaning unit comprises a plurality of vibration parts, and the vibration end of each vibration part abuts against the cavity wall of the reaction cavity; the cleaning control unit is in communication connection with the residue detection unit and the vibration cleaning unit and is used for controlling a plurality of vibration parts in the vibration cleaning unit to generate periodic vibration on the cavity wall of the reaction cavity according to a detection result of the residue detection unit; according to the invention, through cooperative work of the two processes of vibration cleaning and gas cleaning, it is ensured that no by-product is left in the cleaned reaction cavity, so that the repeatability of the cleaning process can be effectively avoided, the product yield can be improved, meanwhile, the aging of equipment can be slowed down, and the service life of the equipment can be prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and in particular to a cleaning system and a cleaning method for a reaction chamber. Background Art

[0002] In the plasma reaction chamber of semiconductor etching equipment, a large amount of byproducts, such as fluorocarbon polymers, particles, and other residues, are deposited on the inner wall of the chamber during the etching process. If these deposits are not effectively removed, they will affect subsequent process repeatability, product yield, and accelerate equipment aging. Traditional gas cleaning methods (such as O2 or F-type gases) have limited effectiveness in removing residues stubbornly adhering to the inner wall of the reaction chamber and may cause process inconsistency. To address the above problems, the present invention provides a cleaning system and cleaning method for a reaction chamber. Summary of the Invention

[0003] To achieve the above-mentioned object, the present invention provides a cleaning system for a reaction chamber, which is used to remove deposited byproducts on the inner wall of the reaction chamber of a plasma processing device, comprising: a residue detection unit, disposed in the reaction chamber, for detecting the concentration of deposited byproducts on the inner wall of the reaction chamber; a vibration cleaning unit comprising a plurality of vibration components, wherein a vibration end of each vibration component abuts against a cavity wall of the reaction chamber; a cleaning control unit, which is in communication with the residue detection unit and the vibration cleaning unit, and is configured to control the plurality of vibration components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber according to a detection result of the residue detection unit, so as to remove deposition byproducts deposited on the inner wall of the reaction chamber.

[0004] Optionally, the vibration component includes: a piezoelectric ceramic piece; an electrode, wherein two electrodes are provided, the two electrodes are provided on the same side of the piezoelectric ceramic piece or on both sides of the piezoelectric ceramic piece, and the two electrodes are respectively connected to a high-frequency signal generator.

[0005] Optionally, the piezoelectric ceramic sheet is bonded to the cavity interlayer or the mounting groove of the reaction chamber by an adhesive.

[0006] Optionally, the vibration frequency generated by the piezoelectric ceramic piece is 40 kHz to 100 kHz.

[0007] Optionally, the vibration component further includes: a vibration transmission piece connected to the piezoelectric ceramic piece, wherein the free end of the vibration transmission piece abuts against the cavity wall of the reaction chamber.

[0008] Optionally, the vibration transmission piece is made of quartz or ceramic.

[0009] Optionally, the plurality of vibration components are arranged in a tubular structure around the reaction chamber; or the plurality of vibration components are arranged in a matrix, and at least three matrices are formed.

[0010] Optionally, there are multiple residue detection units, and the multiple residue detection units are divided into three groups. The three groups of residue detection units are correspondingly arranged at the upper part, the middle part and the lower part of the reaction chamber.

[0011] Optionally, the residue detection unit includes an optical interference sensor, and the optical interference sensor is used to detect changes in the concentration of the deposition by-products.

[0012] Optionally, the cleaning control unit includes a host computer, a high-frequency signal generator, and a power amplifier, and the host computer sets the vibration frequency and vibration time of each vibrating component in the vibration cleaning unit through the high-frequency signal generator and the power amplifier.

[0013] Optionally, the cleaning control unit is linked to a main control system of the plasma processing equipment.

[0014] Optionally, the residue detection unit is also used to detect the concentration of suspended by-products in the reaction chamber; the cleaning system also includes a gas cleaning unit, whose air supply port is provided on the wall of the reaction chamber, for inputting cleaning gas into the reaction chamber to remove the suspended by-products in the reaction chamber.

[0015] Optionally, the gas cleaning unit comprises: A gas supply source for supplying clean gas; a nozzle, connected to the gas supply source through a gas delivery pipeline, the nozzle being arranged on the wall of the reaction chamber and used for delivering clean gas into the reaction chamber; A buffer tank is provided between the nozzle and the gas delivery pipeline and is used for connecting the nozzle and the gas delivery pipeline. The buffer tank is used for adjusting the temperature and pressure of the gas.

[0016] To achieve the above-mentioned object, the present invention further provides a cleaning method for a reaction chamber, wherein the cleaning system for a reaction chamber is used to remove deposited byproducts on the inner wall of the reaction chamber, comprising the following steps: S1: After the etching process, the residue detection unit detects the concentration of deposited byproducts on the inner wall of the reaction chamber; S2: The cleaning control unit controls the multiple vibration components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber according to the detection result of the residue detection unit, so as to remove the deposition byproducts deposited on the inner wall of the reaction chamber.

[0017] Optionally, the following steps are also included: S3: After the etching process, the residue detection unit is also used to detect the concentration of suspended byproducts in the reaction chamber; S4: The cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber according to the detection result of the residue detection unit, so as to remove the suspended by-products in the reaction chamber.

[0018] The beneficial effects of the present invention are as follows: The cleaning system of the present invention can be used to remove by-products deposited on the inner wall of the reaction chamber to avoid by-products remaining on the inner wall of the reaction chamber; the structural design of the present application is reasonable, and the two processes of vibration cleaning and gas cleaning work together, and with the help of intelligent detection and cleaning control units, it ensures that no by-products remain in the reaction chamber after cleaning. This can effectively avoid the repeatability of the cleaning process, improve product yield, and at the same time, slow down equipment aging and extend the service life of the equipment.

[0019] The cleaning system of the present invention significantly improves cleaning efficiency by intelligently identifying cavity contamination and accurately removing it, significantly reducing the time and resource consumption required by traditional cleaning methods. At the same time, the cleaning system can effectively extend the maintenance cycle of etching equipment, enhance the overall stability of the equipment, and enhance the yield of the product. Furthermore, it reduces maintenance frequency and labor costs. This invention not only optimizes the operating efficiency of the equipment but also has a wide range of applicability. It can be seamlessly integrated into various plasma etching systems, enabling system upgrades and renovations, and providing strong guarantees for the efficient and stable operation of semiconductor manufacturing processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a schematic diagram of the structure of the storage chamber as an interlayer in the cleaning system for the reaction chamber of the present invention; Figure 2 This is a structural schematic diagram of a storage chamber as a mounting slot in a cleaning system for a reaction chamber according to the present invention; Figure 3 Schematic diagram of the structure of the vibration cleaning unit in the cleaning system for the reaction chamber of the present invention; Figure 4 This is a flow chart of a method for cleaning a reaction chamber according to the present invention; Figure 5 This is another flow chart of the method for cleaning a reaction chamber according to the present invention.

[0021] Description of Reference Numerals 1. Reaction chamber; 2. Vibration component; 21. Piezoelectric ceramic piece; 22. Adhesive; 23. Vibration transmission piece; 24. Electrode; 3. Storage chamber; 4. Residue detection unit. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0023] In response to the problems existing in the prior art, an embodiment of the present invention provides a cleaning system for a reaction chamber. The cleaning system can be used to remove by-products deposited on the inner wall of the reaction chamber 1 to avoid by-products remaining on the inner wall of the reaction chamber 1; specifically, by adding a combination of a residue detection unit, a cleaning control unit and a vibration cleaning unit, mechanical vibration is added to the cavity wall of the reaction chamber 1 to remove by-products deposited on the inner wall of the reaction chamber 1; at the same time, a gas cleaning unit is added to clean the by-products suspended in the reaction chamber 1 out of the reaction chamber 1 to ensure the cleanliness of the reaction chamber 1; the structural design of the present application is reasonable, and the two processes of vibration cleaning and gas cleaning work together, and with the help of intelligent detection and cleaning control units, it is ensured that no by-products remain in the reaction chamber 1 after cleaning, which can effectively avoid the repeatability of the cleaning process, improve product yield, and at the same time, slow down equipment aging and extend the service life of the equipment.

[0024] The cleaning system is suitable for cleaning reaction chambers of etching equipment, deposition equipment, and degumming equipment included in plasma processing equipment. The cleaning control unit in this embodiment is also linked to the main control system of the plasma processing equipment.

[0025] In one embodiment, Figure 1As shown, the cleaning system for the reaction chamber includes a gas cleaning unit, a vibration cleaning unit, a residue detection unit 4, and a cleaning control unit; wherein, the residue detection unit 4 is used to detect the concentration changes of deposited by-products on the inner wall of the reaction chamber 1 and the concentration changes of suspended by-products in the reaction chamber 1 in real time; the cleaning control unit includes a host computer, a high-frequency signal generator, and a power amplifier, and the host computer can set the vibration frequency and vibration time of each vibration component in the vibration cleaning unit through the high-frequency signal generator and the power amplifier, wherein the high-frequency signal generator is used to generate a high-frequency electrical signal, and the generated high-frequency electrical signal acts on the vibration component of the vibration cleaning unit; the power amplifier is used to amplify the high-frequency electrical signal so that the vibration component of the vibration cleaning unit receives a larger vibration frequency; the cleaning control unit serves as the master control of the entire system, and can adjust the vibration frequency of the vibration cleaning unit and the gas flow and pressure of the gas cleaning unit in real time according to the concentration signal of the deposited by-products collected by the residue detection unit 4, to ensure the automation and intelligence of the cleaning process and achieve efficient and accurate cleaning effects.

[0026] Specifically, the cleaning control unit controls the multiple vibrating components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber to remove the deposition by-products deposited on the inner wall of the reaction chamber; the cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber 1 to remove the suspended by-products in the reaction chamber 1, and also removes some deposition by-products that are not firmly adhered.

[0027] In one example, the air inlet of the gas cleaning unit is arranged on the wall of the reaction chamber 1. In this example, the gas cleaning unit is an important component of the cleaning system. The setting of the gas cleaning unit can input clean gas (such as O2 or F-type gas) into the reaction chamber 1, and remove suspended by-products or loose deposition by-products from the reaction chamber 1 through the flow of clean gas.

[0028] In one example, the gas cleaning unit includes a gas supply source, a buffer tank, a gas delivery pipeline, and a nozzle or jet nozzle. The gas supply source provides the gas required for cleaning, such as, but not limited to, nitrogen or argon. The buffer tank regulates the temperature and pressure of the gas to ensure that it meets the required conditions before entering the reaction chamber 1. The gas delivery pipeline transports the gas from the supply source into the reaction chamber 1. It is important to note that the cleaning control unit, serving as the overall control unit for the gas cleaning unit, coordinates the gas cleaning process. Specifically, the cleaning control unit is responsible for precisely controlling the gas flow, pressure, and temperature to ensure consistency and effectiveness of the cleaning process. The nozzle or jet nozzle (the opening where the nozzle or jet nozzle connects to the reaction chamber 1 is referred to as the gas inlet) injects the cleaning gas into the reaction chamber 1 at a specific angle and pressure, effectively cleaning the inner walls of the reaction chamber 1 and any suspended byproducts. The coordinated operation of these components ensures that the cleaning gas is efficiently and evenly distributed within the reaction chamber 1, achieving the desired cleaning effect and improving equipment operating efficiency and product yield.

[0029] It is worth noting that, depending on the process, the arrangement position of the nozzle or air outlet in the reaction chamber 1 is also different. Specifically, it can be arranged on the side wall, bottom or top of the reaction chamber 1. Of course, in other examples, it can also be any combination of the above arrangements.

[0030] In one embodiment, the cleaning system further comprises a vibrating cleaning unit, such as Figure 1 As shown, the vibration cleaning unit uses high-frequency vibration technology to apply uniform and efficient vibration to the cavity wall of the reaction chamber 1, which can effectively loosen and remove by-products attached to the inner wall of the reaction chamber 1, thereby significantly improving the cleaning efficiency, ensuring the cleanliness of the inner wall of the reaction chamber 1, and providing more reliable protection for subsequent processes. This vibration method can not only deeply clean hard-to-reach corners, but also reduce equipment aging and performance degradation caused by sediment accumulation, extend the service life of the equipment, and reduce maintenance costs. In addition, the coordinated cooperation of the vibration cleaning unit and the gas cleaning unit can completely remove the by-products in the reaction chamber 1.

[0031] In one example, the vibration cleaning unit includes a plurality of vibration components, and the vibration end of each vibration component abuts against the cavity wall of the reaction chamber, such as Figure 1 As shown, the purpose of this arrangement is to enable the vibration generated by the vibrating component to be directly transmitted to the cavity wall of the reaction chamber 1, thereby ensuring that the vibration energy acts efficiently and evenly on the cavity wall of the reaction chamber 1. In addition, this direct contact design not only improves cleaning efficiency, but also reduces the loss of vibration energy during the transmission process, ensuring the stability and reliability of the cleaning process, providing a cleaner operating environment for subsequent process flows, and further improving product yield and equipment operating efficiency.

[0032] In one example, Figure 1 As shown, a storage chamber 3 is provided on the reaction chamber 1, and the storage chamber 3 is used to store the vibration component. The storage chamber 3 can be a cavity interlayer provided in the cavity wall of the reaction chamber 1, and the cavity interlayer is not connected with the inner cavity and the outside of the reaction chamber 1; it can also be a mounting groove, which is not connected with the inner cavity of the reaction chamber 1 but is connected with the outside of the reaction chamber 1. Of course, it is not limited to the interlayer and the mounting groove.

[0033] When the storage chamber 3 is a cavity interlayer, the advantage of the cavity interlayer not being connected to the inner cavity and the outside of the reaction chamber 1 is that it can effectively avoid the influence of the high-energy environment inside the reaction chamber 1 and the external environment on the vibration components in the cavity interlayer, thereby preventing external impurities or pollutants from entering the cavity interlayer, and at the same time avoiding corrosive gases or other harmful substances inside the reaction chamber 1 from entering the cavity interlayer, thereby protecting the components in the cavity interlayer including the vibration components and extending the service life of the components.

[0034] Specifically, when the storage cavity 3 is a cavity interlayer, as shown in FIG. Figure 1 As shown, the cavity interlayer is arranged in the cavity wall of the reaction chamber 1, the vibration component is arranged in the interlayer, and the vibration end of the vibration component is in contact with the cavity wall of the interlayer and is arranged toward the inner cavity of the reaction chamber 1. This design enables the vibration energy to be efficiently transmitted to the cavity wall of the reaction chamber 1, directly acting on the by-products attached to the inner wall of the reaction chamber 1, thereby achieving a more thorough cleaning effect.

[0035] In an actual configuration, the reaction chamber 1 has both a rectangular structure and a cylindrical structure.

[0036] In the reaction chamber 1 having a rectangular structure, as shown in FIG. Figure 1 As shown, the reaction chamber 1 has four sides. Except for one side having a wafer transfer port, the other three sides are provided with a cavity interlayer, and each cavity interlayer is provided with a vibration component. In the cylindrical reaction chamber 1, except for the wafer transfer port, the other sides are provided with a cavity interlayer, and each cavity interlayer is provided with a vibration component.

[0037] In one example, when the storage chamber 3 is a mounting slot, the number of the mounting slots is consistent with the number of the vibration components, and the mounting slots are connected to the external environment of the reaction chamber 1 and are not connected to the inner cavity of the reaction chamber 1, such as Figure 2As shown, in this example, the vibrating end of the vibrating component is in contact with the side wall of the mounting groove. The purpose of this setting of the example is to be able to directly transfer high-frequency vibration energy to the cavity wall of the reaction chamber 1, and to facilitate the installation, maintenance and heat dissipation of the vibrating component. Specifically, since the mounting groove is connected to the external environment, technicians can more conveniently approach the vibrating component from the outside of the reaction chamber 1 to perform installation, debugging, replacement or maintenance operations without entering the interior of the reaction chamber 1, thereby improving maintenance efficiency and reducing maintenance costs. At the same time, this design is conducive to the heat generated by the vibrating component during operation being dissipated through contact with the external environment, avoiding the adverse effects of heat accumulation on the performance and life of the vibrating component, and ensuring that the vibrating component maintains a good working condition during long-term operation. In addition, the design of being connected to the external environment can also simplify the structure of the reaction chamber 1, reduce internal complexity, and further improve the reliability and stability of the system.

[0038] In one example, the vibration component includes a piezoelectric ceramic sheet 21, two electrodes 24 provided on both sides of the piezoelectric ceramic sheet 21 (in other examples, the two electrodes 24 may also be provided on the same side of the piezoelectric ceramic sheet 21), an adhesive 22 for fixing the piezoelectric ceramic sheet 21 to the cavity interlayer or the mounting groove, and a vibration transmitting sheet 23 connected to the piezoelectric ceramic sheet 21 and used to transmit vibration, such as Figure 3 When an alternating voltage is applied, the piezoelectric ceramic piece 21 undergoes microscopic mechanical deformation, namely the reverse piezoelectric effect, which manifests as periodic vibration.

[0039] The adhesive 22 can be made of an adhesive that is both heat-resistant and corrosion-resistant. This adhesive ensures the stability of the piezoelectric ceramic 21 in high-temperature and corrosive environments. The vibration transmission plate 23 can be made of, but is not limited to, quartz or ceramic, with ceramic being preferred. Quartz or ceramic has excellent mechanical properties and chemical stability, effectively transmitting the vibrations generated by the piezoelectric ceramic 21 to the walls of the reaction chamber 1.

[0040] In one example, the free end of the vibration transmitting piece 23 or the end of the piezoelectric ceramic piece 21 in contact with the cavity wall forms the vibration end.

[0041] It should be noted that, among the two electrodes 24 , one is a positive electrode and the other is a negative electrode.

[0042] In one example, the vibration frequency generated by the piezoelectric ceramic plate 21 is between 40kHz and 100kHz. For example, the vibration frequency can be 40kHz, 50kHz, 60kHz, 70kHz, 80kHz, 90kHz, or 100kHz, but is not limited to 40kHz, 50kHz, 60kHz, 70kHz, 80kHz, 90kHz, or 100kHz. The specific vibration frequency can be adjusted according to the thickness of the byproduct deposition and the timing of the cleaning process. In this example, the vibration frequency of the piezoelectric ceramic plate 21 is set between 40kHz and 100kHz, which can achieve a vibration amplitude of micrometers, thereby more effectively removing byproducts adhering to the inner wall of the reaction chamber 1.

[0043] The reason why the vibration amplitude reaches the micron level and can shake off the deposited byproducts is: Vibration frequency and ability to transmit: The vibration frequency range mentioned in this invention is 40kHz to 100kHz. This high-frequency vibration generates high-frequency energy transfer, subjecting the deposited byproducts on the inner wall of the reaction chamber to continuous mechanical impact. Even though the amplitude of a single vibration is very small (on the micrometer level), high-frequency vibration causes energy to repeatedly accumulate and release between the deposits and the inner wall of the reaction chamber, gradually weakening the adhesion between the deposits and the inner wall.

[0044] The physical effects of micron-level vibration: Although micron-level vibrations have a small amplitude, they are sufficient to loosen the internal structure of the deposition byproducts at the microscopic scale. Sediments are typically porous or layered, and micron-level vibrations can induce stress concentrations within these microstructures, leading to localized fracture or loosening of the sediment. High-frequency vibrations can also cause fatigue at the interface between the sediment and the inner wall of the reaction chamber. This fatigue gradually weakens the bond strength, ultimately causing the sediment to detach from the inner wall.

[0045] In one example, the piezoelectric ceramic sheet 21 may be a piezoelectric composite material, wherein the piezoelectric composite material has the characteristics of good flexibility, good impact resistance, excellent comprehensive performance, etc. Two electrodes 24 are provided on the piezoelectric composite material.

[0046] Piezoelectric composites, also known as composite polymer piezoelectric materials, are composed of thermoplastic polymers and inorganic piezoelectric materials. They combine the excellent piezoelectricity of inorganic piezoelectric materials with the excellent processing properties of polymer piezoelectric materials, and can achieve piezoelectricity without requiring stretching or other processing. This piezoelectricity exhibits uniform piezoelectricity in all directions, as it exhibits no anisotropy within the film. There are different types of piezoelectric composites, as exemplified below.

[0047] For example, the 0-3 type piezoelectric composite material consists of piezoelectric ceramic particles dispersed in a polymer matrix.

[0048] For example, 1-3 type piezoelectric composite materials, which are composed of piezoelectric ceramic fibers arranged in one direction and embedded in a polymer matrix.

[0049] Of course, in other examples, it is not limited to the 0-3 type piezoelectric composite material and the 1-3 type piezoelectric composite material.

[0050] In one example, the number of vibration components is set to be multiple, such as Figure 1 As shown, for example, the number can be set to 10, 20, 30, 40, etc., but is not limited to 10, 20, 30, 40; multiple vibration components stacked on the same horizontal plane have different configurations.

[0051] In one configuration, multiple vibration components are arranged in a single layer on the same horizontal plane; in another configuration, at least two layers are arranged on the same horizontal plane. The difference is that a single-layer setting is more suitable for application scenarios that do not require high vibration amplitude and bandwidth. A two-layer or multi-layer setting is more suitable for application scenarios that require a larger vibration amplitude, a wider bandwidth or a special vibration mode, but the cost and technical installation complexity are higher than that of a single-layer setting. The specific choice can be decided by technical personnel based on the actual application scenario, which will not be elaborated here.

[0052] In addition, the plurality of vibration components have different arrangements, as follows: In one arrangement, multiple vibration components are arranged in a matrix. This arrangement is suitable for a reaction chamber 1 with a rectangular structure, and at least three matrices are set up for use on three sides of the reaction chamber 1. The other side is not provided with a vibration component due to limited space due to the wafer transfer port. The vibration components in the matrix arrangement are connected in pairs, so that the matrix can form an organic whole, which is convenient for subsequent installation and maintenance.

[0053] In another arrangement, a plurality of the vibration components are arranged in a tubular structure. This arrangement is suitable for a reaction chamber 1 having a cylindrical structure. In this example arrangement, two adjacent vibration components are connected to each other.

[0054] In one embodiment, the cleaning system comprises a residue detection unit 4, such as Figure 1 As shown, the residue detection unit 4 is provided on the inner wall of the reaction chamber 1 , and the residue detection unit 4 is used to detect the concentration change of the deposited by-products on the inner wall of the reaction chamber 1 and the concentration change of the suspended by-products in the reaction chamber 1 in real time.

[0055] In one example, the residue detection unit 4 is an optical interferometer sensor. An optical interferometer sensor is a high-precision measurement tool suitable for applications requiring high-precision, non-contact measurement. Its operating principle is based on the interference phenomenon of light, measuring the target physical quantity by detecting phase changes or optical path differences in light waves. Optical interferometer sensors are widely used in industry, scientific research, biomedicine, and other fields. Despite their high environmental requirements and high cost, their high precision and high sensitivity make them indispensable in many applications.

[0056] In one example, the residue detection unit 4 is a capacitive sensor. A capacitive sensor identifies byproducts by detecting changes in capacitance. Capacitive sensors are highly sensitive to both non-conductive and conductive media and can operate reliably even in the presence of byproducts or buildup.

[0057] In one example, in order to ensure a more comprehensive and clean detection of the residual by-products in the reaction chamber 1, the number of the residue detection units 4 is set to 9-15. For example, the number can be 9, 10, 12 or 15, but is not limited to 9, 10, 12 or 15, and is preferably 12.

[0058] The plurality of residue detection units 4 are divided into three groups and are respectively arranged in the upper, middle and lower parts of the reaction chamber 1. The upper part can be understood as a position close to the inner top wall of the reaction chamber 1, the middle part can be understood as being set in the middle position of the reaction chamber 1, and the lower part can be understood as being set close to the inner bottom wall of the reaction chamber 1. The upper residue detection unit 4 can promptly detect deposition caused by airflow or volatile residues, the middle residue detection unit 4 can effectively detect the distribution of residues in the main area of ​​the inner wall, and the lower residue detection unit 4 focuses on residues deposited at the bottom due to gravity. In this example, the multi-point detection strategy can achieve comprehensive coverage of the entire inner wall of the reaction chamber 1, improve the accuracy and reliability of detection, and provide strong support for process optimization and equipment maintenance.

[0059] Among them, the number of the residue detection units 4 in the three groups can be the same or different. The specific number arrangement can be selected according to the size of the reaction chamber 1 and the process requirements, which will not be repeated here.

[0060] In one embodiment, the cleaning control unit includes a high-frequency signal generator, which is arranged outside the reaction chamber 1, or in an interlayer or mounting groove; the high-frequency signal generator is used to generate a high-frequency electrical signal, and after the generated high-frequency electrical signal acts on the piezoelectric ceramic piece, the electrical signal is converted into a mechanical vibration signal of the piezoelectric ceramic piece.

[0061] A high-frequency signal generator is an electronic device capable of generating high-frequency electrical signals within a specific frequency range. In this example, the high-frequency signal generator provides a high-frequency electrical signal to the piezoelectric ceramic 21, driving it to generate high-frequency vibrations, thereby cleaning the deposited byproducts on the inner wall of the reaction chamber 1. This high-frequency vibration effectively loosens and removes deposits and residues adhering to the inner wall, ensuring the cleanliness of the reaction chamber 1 and improving process stability and product yield.

[0062] In one embodiment, the cleaning control unit includes a power amplifier, which is disposed outside the reaction chamber 1 or in an interlayer or a mounting groove.

[0063] In this example, the power amplifier amplifies the high-frequency electrical signal generated by the high-frequency signal generator to a sufficiently large power to drive the piezoelectric ceramic piece 21 to generate high-frequency vibration.

[0064] It is worth noting that the vibration component, residue detection unit 4, high-frequency signal generator, and power amplifier are electrically or communicatively connected. The air cleaning unit, residue detection unit 4, and cleaning control unit are electrically or communicatively connected. Therefore, this application includes at least two series circuits.

[0065] To address the problems of the prior art, embodiments of the present invention further provide a method for cleaning a reaction chamber, which includes a process for removing deposited byproducts on the inner wall of the reaction chamber and a process for removing suspended byproducts within the reaction chamber. These two processes can be performed simultaneously or separately, as follows: The process of removing the deposited byproducts on the inner wall of the reaction chamber, such as Figure 4 As shown, the following steps are included: S1: After the etching process, the residue detection unit detects the concentration of the deposited byproducts on the inner wall of the reaction chamber.

[0066] S2: The cleaning control unit controls the multiple vibration components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber according to the detection result of the residue detection unit, so as to remove the deposition byproducts deposited on the inner wall of the reaction chamber.

[0067] In one example, a first initial value is preset for the deposition by-products, and the first initial value is set to 0, that is, there are no deposition by-products on the inner wall of the reaction chamber. During operation, when the residue detection unit detects that there are no deposition by-products on the inner wall of the reaction chamber, the vibration component does not work. When the residue detection unit detects that the concentration of deposition by-products on the inner wall of the reaction chamber is greater than 0, the cleaning control unit controls the operation of multiple vibration components in the vibration cleaning unit to remove the deposition by-products deposited on the inner wall of the reaction chamber. During operation, the residue detection unit can work intermittently or in real time until all the deposition by-products on the inner wall of the reaction chamber are removed. It is worth noting that some residue detection units in the reaction chamber are used to detect deposition by-products.

[0068] The process of removing suspended by-products in the reaction chamber, such as Figure 5 As shown, the following steps are included: S3: After the etching process, the residue detection unit is also used to detect the concentration of suspended byproducts in the reaction chamber; S4: The cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber according to the detection result of the residue detection unit, so as to remove the suspended by-products in the reaction chamber.

[0069] In one example, a second initial value is preset for the suspended by-products, and the second initial value is set to 0, that is, there are no suspended by-products in the reaction chamber. During operation, when the residue detection unit detects that there are no deposited by-products in the reaction chamber, the gas cleaning unit does not work. When the residue detection unit detects that the concentration of suspended by-products in the reaction chamber is greater than 0, the cleaning control unit controls the gas cleaning unit to deliver clean gas to the reaction chamber to remove the suspended by-products in the reaction chamber. During operation, the residue detection unit can work intermittently or in real time until all the suspended by-products in the reaction chamber are cleared, and then it stops working. It is worth noting that another part of the residue detection units in the reaction chamber is used to detect suspended by-products. In combination with the above, in one example, there are, for example, 9 residue detection units, 5 of which are used to detect suspended by-products, and the other 4 are used to detect deposited by-products.

[0070] In response to the problems existing in the prior art, an embodiment of the present invention further provides a controller. The controller is used to execute the cleaning method for the reaction chamber. The purpose of setting up the controller is that, firstly, the controller can realize the automation and intelligence of the cleaning process, and accurately adjust the vibration frequency and time of the vibration cleaning unit, as well as the gas flow and pressure of the gas cleaning unit according to the real-time detection results of the residue detection unit, so as to ensure the consistency and efficiency of the cleaning effect. Secondly, this setting can reduce manual intervention and reduce the risk of incomplete cleaning or equipment damage due to human operational errors, while improving cleaning efficiency and shortening the cleaning cycle. In addition, the controller is linked with the main control system of the plasma treatment equipment to achieve seamless connection between the cleaning process and the plasma treatment process, optimize the overall process flow, and further improve the operating efficiency of the equipment and the yield of the product.

[0071] It is worth noting that the deposited by-products in this application refer to by-products deposited on the inner wall of the reaction chamber 1. The suspended by-products refer to by-products suspended in the reaction chamber.

[0072] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A cleaning system for a reaction chamber, characterized in that: Applied to the removal of deposited byproducts on the inner wall of the reaction chamber of plasma processing equipment, including: a residue detection unit, disposed in the reaction chamber, for detecting the concentration of deposited byproducts on the inner wall of the reaction chamber; The vibration cleaning unit includes a plurality of vibration components, wherein the vibration end of each vibration component abuts against the cavity wall of the reaction chamber; the vibration component includes a piezoelectric ceramic piece; the piezoelectric ceramic piece is bonded to the cavity interlayer or the mounting groove of the reaction chamber via an adhesive; the vibration frequency generated by the piezoelectric ceramic piece ranges from 40kHz to 100kHz; a cleaning control unit, communicatively connected to the residue detection unit and the vibration cleaning unit, for controlling a plurality of vibration components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber according to a detection result of the residue detection unit, so as to remove deposition byproducts deposited on the inner wall of the reaction chamber; The cleaning system further comprises a gas cleaning unit, the gas delivery port of which is arranged on the wall of the reaction chamber and is used to input cleaning gas into the reaction chamber to remove suspended by-products in the reaction chamber.

2. The cleaning system for a reaction chamber according to claim 1, characterized in that: The vibration component further includes an electrode. Two electrodes are provided. The two electrodes are provided on the same side of the piezoelectric ceramic sheet or on both sides of the piezoelectric ceramic sheet respectively. The two electrodes are respectively connected to a high-frequency signal generator.

3. The cleaning system for a reaction chamber according to claim 2, characterized in that: The vibration component further includes: a vibration transmission piece connected to the piezoelectric ceramic piece, wherein the free end of the vibration transmission piece abuts against the cavity wall of the reaction chamber.

4. The cleaning system for a reaction chamber according to claim 3, characterized in that: The vibration transmission piece is made of quartz or ceramic piece.

5. The cleaning system for a reaction chamber according to claim 1, characterized in that: The plurality of vibration components are arranged in a tubular structure around the reaction chamber; or the plurality of vibration components are arranged in a matrix, and form at least three matrices.

6. The cleaning system for a reaction chamber according to claim 1, characterized in that: There are multiple residue detection units, which are divided into three groups. The three groups of residue detection units are correspondingly arranged at the upper part, the middle part and the lower part of the reaction chamber.

7. The cleaning system for a reaction chamber according to claim 6, characterized in that: The residue detection unit includes an optical interference sensor configured to detect a change in the concentration of the deposition by-products.

8. The cleaning system for a reaction chamber according to claim 1, characterized in that: The cleaning control unit includes a host computer, a high-frequency signal generator, and a power amplifier. The host computer sets the vibration frequency and vibration time of each vibration component in the vibration cleaning unit through the high-frequency signal generator and the power amplifier.

9. The cleaning system for a reaction chamber according to claim 8, characterized in that: The cleaning control unit is linked to a main control system of the plasma processing equipment.

10. The cleaning system for a reaction chamber according to claim 1, characterized in that: The residue detection unit is also used to detect the concentration of suspended by-products in the reaction chamber.

11. The cleaning system for a reaction chamber according to claim 10, characterized in that: The gas cleaning unit comprises: A gas supply source for supplying clean gas; a nozzle, connected to the gas supply source through a gas delivery pipeline, the nozzle being arranged on the wall of the reaction chamber and used for delivering clean gas into the reaction chamber; A buffer tank is provided between the nozzle and the gas delivery pipeline and is used for connecting the nozzle and the gas delivery pipeline. The buffer tank is used for adjusting the temperature and pressure of the gas.

12. A method for cleaning a reaction chamber, characterized in that: Using the cleaning system for a reaction chamber according to any one of claims 1 to 11 to remove deposited byproducts on the inner wall of the reaction chamber comprises the following steps: S1: After the etching process, the residue detection unit detects the concentration of deposited byproducts on the inner wall of the reaction chamber; S2: The cleaning control unit controls the multiple vibration components in the vibration cleaning unit to generate periodic vibrations on the cavity wall of the reaction chamber according to the detection result of the residue detection unit, so as to remove the deposition byproducts deposited on the inner wall of the reaction chamber.

13. The method for cleaning a reaction chamber according to claim 12, characterized in that: The following steps are also included: S3: After the etching process, the residue detection unit is also used to detect the concentration of suspended byproducts in the reaction chamber; S4: The cleaning control unit controls the gas cleaning unit to deliver clean gas into the reaction chamber according to the detection result of the residue detection unit, so as to remove the suspended by-products in the reaction chamber.

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