Aluminum alloy photovoltaic frame based on anti-pid effect and processing method thereof
By anodizing the aluminum alloy photovoltaic frame and coating it with anti-PID coating, the leakage current problem caused by potential difference in photovoltaic modules under high temperature and high humidity environments is solved, thereby improving the anti-PID performance and service life of the modules.
Patent Information
- Application Number
- CN202510875859.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-27
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2045-06-27
AI Technical Summary
In high temperature and high humidity environments, leakage current caused by potential difference in photovoltaic modules triggers charge migration, which damages the passivation layer and forms conductive channels, leading to power degradation and shortened lifespan of the modules. Existing aluminum alloy frames have insufficient anti-PID performance.
An oxide film is prepared by anodizing the aluminum alloy photovoltaic frame, and an anti-PID coating is applied to its surface. The coating is composed of modified monomers containing fluorine elements and benzotriazole groups, forming a dense protective layer that enhances insulation and corrosion resistance.
It improves the anti-PID performance of aluminum alloy photovoltaic frames, reduces sodium ion migration, enhances insulation and corrosion resistance, and extends the service life and power generation efficiency of photovoltaic modules.
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Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the technical field of aluminum alloys, in particular to an aluminum alloy photovoltaic frame based on PID effect resistance and a processing method thereof. BACKGROUND
[0002] With the development of solar photovoltaic technology, photovoltaic power generation has gradually become an important power generation energy approach, but with the improvement of the scale effect of the photovoltaic industry, problems of some photovoltaic components are paid more and more attention.
[0003] In the use process, the photovoltaic component will form a potential difference due to high system voltage and grounding frame during operation, and in a high-temperature and high-humidity environment, the frame leakage current will cause charge migration to the surface of the battery, damage the passivation layer and further form a conductive channel, resulting in component power attenuation, causing the power generation efficiency of the photovoltaic component to decrease and affecting the service life thereof, and in this process, the aluminum alloy frame is a key path for charge migration, and improving the PID performance of the aluminum alloy frame will directly relate to the performance of the photovoltaic component. SUMMARY
[0004] The application aims to provide an aluminum alloy photovoltaic frame based on PID effect resistance and a processing method thereof to solve the problems in the prior art.
[0005] To achieve the above-mentioned purpose, the application provides the following technical scheme: a processing method of an aluminum alloy photovoltaic frame based on PID effect resistance, comprising the following steps:
[0006] S1. preparing an anodized aluminum alloy photovoltaic frame;
[0007] S11. after the surface of the aluminum alloy component is subjected to degreasing and polishing treatment, the surface is cleaned with deionized water and anhydrous ethanol respectively, and then dried to obtain a pretreated aluminum alloy component;
[0008] S12. the pretreated aluminum alloy component is placed in an anodizing electrolyte, and the surface thereof is subjected to anodizing, after the oxidation is completed, the surface is cleaned with deionized water and anhydrous ethanol again, and then dried to obtain an anodized aluminum alloy photovoltaic frame;
[0009] S2. preparing a PID-resistant coating;
[0010] S21. 2,2,2-trifluoroethanol and DMF are mixed, and then mixed with benzotriazole-5-carboxylic acid, heated to 95-110 DEG C, and stirred for 2-5 h, then heated to stop, to obtain reaction liquid A for standby;
[0011] Mix 1,4-bis(dimethylsilyl)benzene with DMAc, stir to disperse uniformly, then add chloroplatinic acid, mix uniformly, then add reaction solution A dropwise, after the addition is completed, warm to 80-105℃, stir for 2-4h, then remove the excess solvent by rotary evaporation to obtain a benzotriazole fluoride intermediate;
[0012] S22. Mix the benzotriazole fluoride intermediate with clean DMF, disperse uniformly, then add to allyl oxalate, after the addition is completed, warm to 85-100℃, reflux and stir for 4-6h, then remove the excess solvent by rotary evaporation to obtain a modified monomer;
[0013] S23. Mix methyl acrylate, butyl acrylate, modified monomer, hexanediol diacrylate, isobornyl acrylate uniformly, then add diluent and silica filler, continue to mix uniformly, then add zinc acrylate additive and photocuring agent, mix uniformly to obtain a PID-resistant coating;
[0014] S3. Uniformly coat the PID-resistant coating on the surface of the anodized aluminum alloy photovoltaic frame, irradiate and cure using UVA ultraviolet light for 5-15min to obtain an aluminum alloy photovoltaic frame.
[0015] Further, in step S12, the anodizing electrolyte contains 45-80g / L oxalic acid, 12-15g / L aluminum phosphate, 15-20g / L potassium hydrogen oxalate, and 5-10g / L glycolic acid, with the balance being water.
[0016] Further, in step S12, during anodizing, the voltage is set to 45-80V, the oxidation time is 30-60min, and the oxidation temperature is 15-20℃.
[0017] Further, in step S21, 4.6-5.2 parts of 2,2,2-trifluoroethanol, 7.5-8.5 parts of benzotriazole-5-carboxylic acid, 10 parts of 1,4-bis(dimethylsilyl)benzene, and 0.05-0.08 parts of chloroplatinic acid are added.
[0018] Further, in step S22, 2-2.5 parts of benzotriazole fluoride intermediate and 1 part of allyl oxalate are added.
[0019] Further, in step S23, the PID-resistant coating is composed of 25-32 parts of methyl acrylate, 28-35 parts of butyl acrylate, 15-22 parts of modified monomer, 18-27 parts of hexanediol diacrylate, 5-6 parts of isobornyl acrylate, 30-45 parts of diluent, 15-21 parts of silica filler, 1-5 parts of zinc acrylate additive, and 5-8 parts of photocuring agent.
[0020] Further, in step S23, the diluent is acetone; and the photoinitiator is at least one of 1173 and TPO.
[0021] Further, an aluminum alloy photovoltaic frame is prepared by the processing method.
[0022] Compared with the prior art, the present application has the following beneficial effects:
[0023] In order to improve the anti-PID performance of the aluminum alloy photovoltaic frame, the present application performs surface modification treatment on the aluminum alloy photovoltaic frame.
[0024] The present application first performs anodic oxidation treatment on the aluminum alloy frame, and a layer of oxide film is prepared on the surface of the aluminum alloy by using an anodic oxidation process, which can effectively improve the insulation of the surface of the aluminum alloy, thereby reducing the migration of sodium ions to the surface of the battery sheet through the leakage current in a high-humidity environment, and inhibiting the occurrence of the PID effect.
[0025] However, the surface of the anodic film prepared by the simple anodic oxidation process still has small pores, and in a high-temperature and high-humidity environment, external water vapor and other corrosive substances can still penetrate through the micropores and cause corrosion of the aluminum alloy frame.
[0026] In the preparation of the anti-PID coating, the present application uses 2,2,2-trifluoroethanol containing fluorine elements and benzotriazole-5-carboxylic acid containing benzotriazole groups to mix and react, which can react with carboxyl and hydroxyl groups to generate carboxylic acid ester products with carbon-carbon double bonds.
[0027] In addition, the present application also limits the voltage during the preparation of the anodic oxidation film, so that the surface of the anodic oxidation film has a higher surface area under high voltage, which can effectively increase the bonding strength between the anti-PID coating and the anodic oxidation film, and further slow down the peeling of the coating. DETAILED DESCRIPTION
[0028] All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without creative labor fall within the scope of protection of the present application.
[0029] The silica filler used in the examples and comparative examples of the present application is a commercially available fumed silica TH-6380 type;
[0030] Example 1. A processing method of an aluminum alloy photovoltaic frame based on anti-PID effect, comprising the following steps:
[0031] S1. Preparing an anodized aluminum alloy photovoltaic frame;
[0032] S11. After the surface of the aluminum alloy assembly is subjected to degreasing and polishing treatment, the surface is cleaned with deionized water and anhydrous ethanol respectively, and dried to obtain a pretreated aluminum alloy assembly;
[0033] During degreasing, the aluminum alloy assembly is immersed in a sodium hydroxide solution with a concentration of 1.5 mol / L, heated to 55℃, and after 30s of immersion degreasing, taken out to complete the degreasing treatment;
[0034] During polishing, the degreased aluminum alloy assembly is immersed in a sulfuric acid solution with a concentration of 1.5 mol / L, heated to 85℃, and after 40s of immersion treatment, taken out to complete the polishing treatment;
[0035] S12. The pretreated aluminum alloy assembly is placed in an anodizing electrolyte, and the surface thereof is subjected to anodizing. After oxidation, the surface is again cleaned with deionized water and anhydrous ethanol, and dried to obtain an anodized aluminum alloy photovoltaic frame;
[0036] The anodizing electrolyte contains 45g / L oxalic acid, 12g / L aluminum phosphate, 15g / L potassium hydrogen oxalate, and 5g / L glycolic acid, with the balance being water;
[0037] During anodizing, the voltage is 45V, the oxidation time is 60min, and the oxidation temperature is 15℃;
[0038] S2. Preparing an anti-PID coating;
[0039] S21. 4.6 parts of 2,2,2-trifluoroethanol and DMF are mixed, and then mixed with 7.5 parts of benzotriazole-5-carboxylic acid, heated to 95℃, and after 5h of stirring reaction, the heating is stopped to obtain reaction liquid A, which is ready for use;
[0040] Mix 10 parts of 1,4-bis(dimethylsilyl)benzene with DMAc, stir and disperse uniformly, then add 0.05 parts of chloroplatinic acid, mix uniformly, then add reaction solution A dropwise, after the addition is completed, warm to 80°C, stir for 6h, then remove the excess solvent by rotary evaporation to obtain a benzotriazole fluoride intermediate;
[0041] S22. Mix 2 parts of benzotriazole fluoride intermediate with clean DMF, disperse uniformly, then add to 1 part of allyl oxalate, after the addition is completed, warm to 85°C, reflux and stir for 4h, then remove the excess solvent by rotary evaporation to obtain a modified monomer;
[0042] S23. Mix 32 parts of methyl acrylate, 35 parts of butyl acrylate, 15 parts of modified monomer, 27 parts of hexanediol diacrylate, 6 parts of isobornyl acrylate, then add 45 parts of acetone diluent and 21 parts of silica filler, continue to mix uniformly, then add 5 parts of zinc acrylate additive and 8 parts of photocuring agent TPO, mix uniformly to obtain a PID-resistant coating;
[0043] S3. Apply the PID-resistant coating uniformly to the surface of the anodized aluminum alloy photovoltaic frame, irradiate and cure using UVA ultraviolet light for 5min to obtain an aluminum alloy photovoltaic frame.
[0044] Example 2. A processing method for an aluminum alloy photovoltaic frame based on PID resistance, comprising the following steps:
[0045] S1. Prepare an anodized aluminum alloy photovoltaic frame;
[0046] S11. After degreasing and polishing the surface of the aluminum alloy component, wash the surface with deionized water and anhydrous ethanol respectively, and dry to obtain a pretreated aluminum alloy component;
[0047] During degreasing, immerse the aluminum alloy component in a sodium hydroxide solution with a concentration of 1.5mol / L, warm to 55°C, immerse for 30s, then take out to complete the degreasing treatment;
[0048] During polishing, immerse the degreased aluminum alloy component in a sulfuric acid solution with a concentration of 1.5mol / L, warm to 85°C, immerse for 40s, then take out to complete the polishing treatment;
[0049] S12. Place the pretreated aluminum alloy component in an anodizing electrolyte to perform anodizing on the surface, then wash the surface with deionized water and anhydrous ethanol again, and dry to obtain an anodized aluminum alloy photovoltaic frame;
[0050] The anodic oxidation electrolyte contains 80 g / L oxalic acid, 15 g / L aluminum phosphate, 20 g / L potassium hydrogen oxalate and 10 g / L glycolic acid, and the balance is water;
[0051] During anodic oxidation, the voltage is 80 V, the oxidation time is 30 min, and the oxidation temperature is 20℃;
[0052] S2. Preparation of anti-PID coating;
[0053] S21. 4.6 parts of 2,2,2-trifluoroethanol and DMF are mixed, and then mixed with 7.5 parts of benzotriazole-5-carboxylic acid. After being heated to 110℃ and stirred for 2h, heating is stopped to obtain reaction liquid A, which is ready for use;
[0054] 10 parts of 1,4-bis(dimethylsilyl)benzene and DMAc are mixed and uniformly dispersed, then 0.05 parts of chloroplatinic acid is added and uniformly mixed, then reaction liquid A is added dropwise, after the addition is completed, the temperature is raised to 105℃, and after stirring for 2h, the excess solvent is removed by rotary evaporation to obtain a benzotriazole fluoride intermediate;
[0055] S22. 2 parts of benzotriazole fluoride intermediate and clean DMF are mixed and uniformly dispersed, then added dropwise into 1 part of allyl oxalate, after the addition is completed, the temperature is raised to 100℃, and after reflux stirring for 4h, the excess solvent is removed by rotary evaporation to obtain a modified monomer;
[0056] S23. 25 parts of methyl acrylate, 28 parts of butyl acrylate, 15 parts of modified monomer, 18 parts of hexanediol diacrylate, 5 parts of isobornyl acrylate are uniformly mixed, then 30 parts of acetone diluent and 15 parts of silica filler are added, then 1 part of zinc acrylate additive and 5 parts of photocuring agent TPO are added, and after uniform mixing, an anti-PID coating is obtained.
[0057] S3. The anti-PID coating is uniformly coated on the surface of the anodized aluminum alloy photovoltaic frame, and after being irradiated and cured for 15 min using UVA ultraviolet light, an aluminum alloy photovoltaic frame is obtained.
[0058] Example 3. A processing method of an aluminum alloy photovoltaic frame based on anti-PID effect, comprising the following steps:
[0059] Compared with Example 2, the amount of 2,2,2-trifluoroethanol added in step S21 is increased in this embodiment;
[0060] S1. Preparation of anodized aluminum alloy photovoltaic frame;
[0061] S11. After the surface of the aluminum alloy component is degreased and polished, the surface is cleaned with deionized water and anhydrous ethanol respectively, and then dried to obtain a pretreated aluminum alloy component.
[0062] When defatting, the aluminum alloy assembly is immersed in a sodium hydroxide solution with a concentration of 1.5 mol / L, heated to 55℃, and after 30s of immersion defatting, it is taken out, and the defatting treatment is completed;
[0063] When polishing, the defatted aluminum alloy assembly is immersed in a sulfuric acid solution with a concentration of 1.5 mol / L, heated to 85℃, and after 40s of immersion treatment, it is taken out, and the polishing treatment is completed;
[0064] S12. The pretreated aluminum alloy assembly is placed in an anodizing electrolyte, and the surface is anodized. After oxidation, the surface is cleaned again with deionized water and anhydrous ethanol, dried, and an anodized aluminum alloy photovoltaic frame is obtained;
[0065] The anodizing electrolyte contains 80g / L oxalic acid, 15g / L aluminum phosphate, 20g / L potassium hydrogen oxalate, and 10g / L glycolic acid, with the balance being water;
[0066] When anodizing, the voltage is 80V, the oxidation time is 30min, and the oxidation temperature is 20℃;
[0067] S2. Prepare an anti-PID coating;
[0068] S21. Mix 5.2 parts of 2,2,2-trifluoroethanol with DMF, mix it with 7.5 parts of benzotriazole-5-carboxylic acid, heat to 110℃, and after 2h of stirring reaction, stop heating to obtain reaction liquid A, which is ready for use;
[0069] Mix 10 parts of 1,4-bis(dimethylsilyl)benzene with DMAc, stir and disperse uniformly, then add 0.05 parts of chloroplatinic acid, mix uniformly, then add reaction liquid A dropwise, after the addition is completed, warm to 105℃, stir for 2h, then remove the excess solvent by rotary evaporation to obtain a benzotriazole fluoride intermediate;
[0070] S22. Mix 2 parts of benzotriazole fluoride intermediate with clean DMF, disperse uniformly, then add it dropwise to 1 part of allyl oxalate, after the addition is completed, heat to 100℃, reflux and stir for 4h, then remove the excess solvent by rotary evaporation to obtain a modified monomer;
[0071] S23. Mix 25 parts of methyl acrylate, 28 parts of butyl acrylate, 15 parts of modified monomer, 18 parts of hexanediol diacrylate, and 5 parts of isobornyl acrylate uniformly, then add 30 parts of acetone diluent and 15 parts of silica filler, continue to mix uniformly, then add 1 part of zinc acrylate additive and 5 parts of photocuring agent TPO, mix uniformly, and an anti-PID coating is obtained;
[0072] S3. Uniformly coating the anti-PID coating on the surface of the anodized aluminum alloy photovoltaic frame, and after using UVA ultraviolet light to irradiate and cure for 15 min, an aluminum alloy photovoltaic frame is obtained.
[0073] Embodiment 4. A processing method of an aluminum alloy photovoltaic frame based on an anti-PID effect, comprising the following steps:
[0074] Compared with embodiment 3, the amount of benzotriazole-5-carboxylic acid added in step S21 is increased in this embodiment;
[0075] S1. Preparing an anodized aluminum alloy photovoltaic frame;
[0076] S11. After the surface of the aluminum alloy assembly is subjected to degreasing and polishing treatment, the surface is cleaned with deionized water and anhydrous ethanol respectively, and dried to obtain a pretreated aluminum alloy assembly;
[0077] During the degreasing, the aluminum alloy assembly is immersed in a sodium hydroxide solution with a concentration of 1.5 mol / L, and the temperature is raised to 55℃. After 30s of immersion degreasing, the aluminum alloy assembly is taken out, and the degreasing treatment is completed;
[0078] During the polishing, the degreased aluminum alloy assembly is immersed in a sulfuric acid solution with a concentration of 1.5 mol / L, and the temperature is raised to 85℃. After 40s of immersion treatment, the aluminum alloy assembly is taken out, and the polishing treatment is completed;
[0079] S12. The pretreated aluminum alloy assembly is placed in an anodizing electrolyte, and the surface thereof is subjected to anodizing. After the oxidation is completed, the surface is cleaned with deionized water and anhydrous ethanol again, and dried to obtain an anodized aluminum alloy photovoltaic frame;
[0080] The anodizing electrolyte contains 80g / L oxalic acid, 15g / L aluminum phosphate, 20g / L potassium hydrogen oxalate, and 10g / L glycolic acid, and the balance is water;
[0081] During the anodizing, the voltage is 80V, the oxidation time is 30min, and the oxidation temperature is 20℃;
[0082] S2. Preparing an anti-PID coating;
[0083] S21. 5.2 parts of 2,2,2-trifluoroethanol and DMF are mixed, and then mixed with 8.5 parts of benzotriazole-5-carboxylic acid. The temperature is raised to 110℃, and after 2h of stirring reaction, the heating is stopped to obtain reaction liquid A, which is ready for use;
[0084] 10 parts of 1,4-bis(dimethylsilyl)benzene were mixed with DMAc, stirred and dispersed uniformly, then 0.05 parts of chloroplatinic acid was added and mixed uniformly, then the reaction solution A was added dropwise, after the addition was completed, the temperature was raised to 105°C, and the stirring reaction was carried out for 2h, then the excess solvent was removed by rotary evaporation to obtain a benzotriazole fluoride intermediate;
[0085] S22. 2 parts of benzotriazole fluoride intermediate were mixed with clean DMF, dispersed uniformly, then added dropwise into 1 part of allyl oxalate, after the addition was completed, the temperature was raised to 100°C, and the stirring reaction was carried out for 4h, then the excess solvent was removed by rotary evaporation to obtain a modified monomer;
[0086] S23. 25 parts of methyl acrylate, 28 parts of butyl acrylate, 15 parts of modified monomer, 18 parts of hexanediol diacrylate, 5 parts of isobornyl acrylate were mixed uniformly, then 30 parts of acetone diluent and 15 parts of silica filler were added, then 1 part of zinc acrylate additive and 5 parts of photocuring agent TPO were added, mixed uniformly, then the anti-PID coating was obtained.
[0087] S3. The anti-PID coating was uniformly coated on the surface of the anodized aluminum alloy photovoltaic frame, and the UVA ultraviolet light was used for irradiation and curing for 15min to obtain the aluminum alloy photovoltaic frame.
[0088] Embodiment 5. A processing method of an aluminum alloy photovoltaic frame based on anti-PID effect, comprising the following steps:
[0089] Compared with embodiment 4, the addition amount of benzotriazole fluoride intermediate in step S22 is increased in this embodiment;
[0090] S1. An anodized aluminum alloy photovoltaic frame was prepared;
[0091] S11. After the surface of the aluminum alloy component was degreased and polished, the surface was cleaned with deionized water and anhydrous ethanol respectively, and dried to obtain a pretreated aluminum alloy component;
[0092] During degreasing, the aluminum alloy component was immersed in a sodium hydroxide solution with a concentration of 1.5mol / L, the temperature was raised to 55°C, and the immersion degreasing was carried out for 30s, then the aluminum alloy component was taken out, and the degreasing treatment was completed;
[0093] During polishing, the degreased aluminum alloy component was immersed in a sulfuric acid solution with a concentration of 1.5mol / L, the temperature was raised to 85°C, and the immersion treatment was carried out for 40s, then the aluminum alloy component was taken out, and the polishing treatment was completed;
[0094] S12. The pretreated aluminum alloy component was placed in an anodizing electrolyte, and the surface was anodized, then the surface was cleaned with deionized water and anhydrous ethanol again, and dried to obtain an anodized aluminum alloy photovoltaic frame;
[0095] The anodic oxidation electrolyte contains 80 g / L oxalic acid, 15 g / L aluminum phosphate, 20 g / L potassium hydrogen oxalate and 10 g / L glycolic acid, and the balance is water;
[0096] During anodic oxidation, the voltage is 80 V, the oxidation time is 30 min, and the oxidation temperature is 20℃;
[0097] S2. Preparation of anti-PID coating;
[0098] S21. 5.2 parts of 2,2,2-trifluoroethanol and DMF are mixed, and then mixed with 8.5 parts of benzotriazole-5-carboxylic acid. After being heated to 110℃ and stirred for 2h, heating is stopped to obtain reaction liquid A, which is ready for use;
[0099] 10 parts of 1,4-bis(dimethylsilyl)benzene and DMAc are mixed and uniformly dispersed, then 0.05 parts of chloroplatinic acid is added and uniformly mixed, then reaction liquid A is added dropwise, after the addition is completed, the temperature is raised to 105℃, and after stirring for 2h, the excess solvent is removed by rotary evaporation to obtain a benzotriazole fluorine intermediate;
[0100] S22. 2.5 parts of benzotriazole fluorine intermediate and clean DMF are mixed and uniformly dispersed, then added dropwise to 1 part of allyl oxalate, after the addition is completed, the temperature is raised to 100℃, and after reflux stirring for 4h, the excess solvent is removed by rotary evaporation to obtain a modified monomer;
[0101] S23. 25 parts of methyl acrylate, 28 parts of butyl acrylate, 15 parts of modified monomer, 18 parts of hexanediol diacrylate, 5 parts of isobornyl acrylate are uniformly mixed, then 30 parts of acetone diluent and 15 parts of silica filler are added, then 1 part of zinc acrylate additive and 5 parts of photocuring agent TPO are added, and then uniformly mixed to obtain an anti-PID coating;
[0102] S3. The anti-PID coating is uniformly coated on the surface of the anodized aluminum alloy photovoltaic frame, and after being irradiated and cured for 15 min using UVA ultraviolet light, an aluminum alloy photovoltaic frame is obtained.
[0103] Example 6. A processing method of an aluminum alloy photovoltaic frame based on anti-PID effect, comprising the following steps:
[0104] Compared with example 5, the amount of modified monomer added in step S23 is increased in this embodiment;
[0105] S1. Preparation of anodized aluminum alloy photovoltaic frame;
[0106] S11. After degreasing and polishing the surface of the aluminum alloy assembly, the surface is cleaned with deionized water and anhydrous ethanol respectively, and dried to obtain a pretreated aluminum alloy assembly;
[0107] During degreasing, the aluminum alloy assembly is immersed in a sodium hydroxide solution with a concentration of 1.5 mol / L, heated to 55°C, and after 30 seconds of immersion degreasing, it is removed to complete the degreasing treatment;
[0108] During polishing, the degreased aluminum alloy assembly is immersed in a sulfuric acid solution with a concentration of 1.5 mol / L, heated to 85°C, and after 40 seconds of immersion treatment, it is removed to complete the polishing treatment;
[0109] S12. The pretreated aluminum alloy assembly is placed in an anodizing electrolyte, and the surface is anodized. After oxidation, the surface is cleaned again with deionized water and anhydrous ethanol, and dried to obtain an anodized aluminum alloy photovoltaic frame;
[0110] The anodizing electrolyte contains 80 g / L oxalic acid, 15 g / L aluminum phosphate, 20 g / L potassium hydrogen oxalate, and 10 g / L glycolic acid, with the balance being water;
[0111] During anodizing, the voltage is 80V, the oxidation time is 30 minutes, and the oxidation temperature is 20°C;
[0112] S2. Prepare the anti-PID coating;
[0113] S21. Mix 5.2 parts of 2,2,2-trifluoroethanol with DMF, mix it with 8.5 parts of benzotriazole-5-carboxylic acid, heat to 110°C, and stir for 2 hours. After stopping heating, a reaction liquid A is obtained, which is ready for use;
[0114] Mix 10 parts of 1,4-bis(dimethylsilyl)benzene with DMAc, stir and disperse uniformly, then add 0.05 parts of chloroplatinic acid, mix uniformly, then add reaction liquid A dropwise, after the addition is completed, warm to 105°C, stir for 2 hours. After rotary evaporation to remove excess solvent, a benzotriazole fluorine intermediate is obtained;
[0115] S22. Mix 2.5 parts of benzotriazole fluorine intermediate with clean DMF, disperse uniformly, then add to 1 part of allyl oxalate, after the addition is completed, heat to 100°C, reflux and stir for 4 hours. After rotary evaporation to remove excess solvent, a modified monomer is obtained;
[0116] S23. 25 parts of methyl acrylate, 28 parts of butyl acrylate, 22 parts of modified monomer, 18 parts of hexanediol diacrylate, 5 parts of isobornyl acrylate are mixed uniformly, then 30 parts of acetone diluent and 15 parts of silica filler are added, and continue to mix uniformly, then 1 part of zinc acrylate additive and 5 parts of photocuring agent TPO are added, mix uniformly, and the anti-PID coating is obtained;
[0117] S3. The anti-PID coating is uniformly coated on the surface of the anodized aluminum alloy photovoltaic frame, and the UVA ultraviolet light is used for irradiation and curing for 15 min, and the aluminum alloy photovoltaic frame is obtained.
[0118] Comparative Example 1. A processing method of an aluminum alloy photovoltaic frame based on anti-PID effect, comprising the following steps:
[0119] Compared with Example 1, the comparative example does not prepare the modified monomer;
[0120] S1. An anodized aluminum alloy photovoltaic frame is prepared;
[0121] S11. After the surface of the aluminum alloy assembly is degreased and polished, the surface is cleaned with deionized water and anhydrous ethanol respectively, and dried to obtain a pretreated aluminum alloy assembly;
[0122] During degreasing, the aluminum alloy assembly is immersed in a sodium hydroxide solution with a concentration of 1.5 mol / L, heated to 55℃, immersed for 30s, then taken out, and the degreasing process is completed;
[0123] During polishing, the degreased aluminum alloy assembly is immersed in a sulfuric acid solution with a concentration of 1.5 mol / L, heated to 85℃, immersed for 40s, then taken out, and the polishing process is completed;
[0124] S12. The pretreated aluminum alloy assembly is placed in an anodizing electrolyte, and the surface is anodized. After oxidation, the surface is cleaned with deionized water and anhydrous ethanol again, and dried to obtain an anodized aluminum alloy photovoltaic frame;
[0125] The anodizing electrolyte contains 80g / L oxalic acid, 15g / L aluminum phosphate, 20g / L potassium hydrogen oxalate, and 10g / L glycolic acid, and the balance is water;
[0126] During anodizing, the voltage is 80V, the oxidation time is 30min, and the oxidation temperature is 20℃;
[0127] S2. An anti-PID coating is prepared;
[0128] Mixing 25 parts of methyl acrylate, 28 parts of butyl acrylate, 18 parts of hexanediol diacrylate, 5 parts of isobornyl acrylate uniformly, then adding 30 parts of acetone diluent and 15 parts of silica filler, continue to mix uniformly, then add 1 part of zinc acrylate additive and 5 parts of photocuring agent TPO, mix uniformly, get the anti-PID coating;
[0129] S3. The anti-PID coating is uniformly coated on the surface of the anodized aluminum alloy photovoltaic frame, and after 15 min of curing under UVA ultraviolet light irradiation, the aluminum alloy photovoltaic frame is obtained.
[0130] The anodized aluminum alloy photovoltaic frames prepared in Examples 1-6 and Comparative Example 1 are subjected to breakdown voltage resistance test, and the detection standard is in accordance with QJ483-1990, and the detection results are shown in Table 1;
[0131] Table 1.
[0132]
[0133] The anti-PID coatings prepared in Examples 1-6 and Comparative Example 1 are dried and coated, and then the surface insulation resistance coefficient of the coating is detected according to GB / T 2522-2017; the water resistance of the coating is detected according to GB / T 1733-1993; the aging resistance of the coating is detected according to JGT 172-2005, and the coating performance is detected at 720 h, 840 h and 960 h, respectively; the detection results are shown in Table 2;
[0134] Table 2.
[0135]
[0136] Finally, it should be noted that the above only describes the preferred embodiments of the present application and is not intended to limit the present application. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent replacements to some technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.
Claims
1. A method for processing aluminum alloy photovoltaic frame based on anti-PID effect, characterized in that, It comprises the following steps: S1. Prepare an anodized aluminum alloy photovoltaic frame; S11. After degreasing and polishing the surface of the aluminum alloy assembly, clean the surface with deionized water and anhydrous ethanol, and dry to obtain a pretreated aluminum alloy assembly; S12. Place the pretreated aluminum alloy assembly in an anodizing electrolyte and anodize the surface. After oxidation, clean the surface with deionized water and anhydrous ethanol again, and dry to obtain an anodized aluminum alloy photovoltaic frame; S2. Prepare an anti-PID coating; S21. Mix 2,2,2-trifluoroethanol with DMF, mix it with benzotriazole-5-carboxylic acid, heat to 95-110℃, stir for 2-5h, then stop heating to obtain reaction liquid A for standby; Mix 1,4-bis(dimethylsilyl)benzene with DMAc, stir until uniform, then add chloroplatinic acid, mix well, then add reaction liquid A dropwise, after the addition is complete, warm to 80-105℃, stir for 2-4h, then remove the excess solvent by rotary evaporation to obtain a benzotriazole fluoride intermediate; S22. Mix the benzotriazole fluoride intermediate with clean DMF, disperse uniformly, then add it to allyl oxalate, after the addition is complete, warm to 85-100℃, reflux and stir for 4-6h, then remove the excess solvent by rotary evaporation to obtain a modified monomer; S23. Mix methyl acrylate, butyl acrylate, modified monomer, hexanediol diacrylate, isobornyl acrylate uniformly, then add diluent and silica filler, continue to mix until uniform, then add zinc acrylate additive and photocuring agent, mix until uniform to obtain an anti-PID coating; S3. Apply the anti-PID coating evenly to the surface of the anodized aluminum alloy photovoltaic frame, irradiate and cure with UVA ultraviolet light for 5-15min to obtain an aluminum alloy photovoltaic frame.
2. The method of claim 1, wherein the aluminum alloy photovoltaic frame is based on the anti-PID effect. In step S12, the anodizing electrolyte contains 45-80g / L oxalic acid, 12-15g / L aluminum phosphate, 15-20g / L potassium hydrogen oxalate, and 5-10g / L glycolic acid, with the balance being water.
3. The method of claim 1, wherein the aluminum alloy photovoltaic frame is based on the anti-PID effect. In step S12, during anodizing, the voltage is set to 45-80V, the oxidation time is 30-60min, and the oxidation temperature is 15-20℃.
4. The method of claim 1, wherein the aluminum alloy photovoltaic frame is based on the anti-PID effect. In step S21, 4.6-5.2 parts of 2,2,2-trifluoroethanol, 7.5-8.5 parts of benzotriazole-5-carboxylic acid, 10 parts of 1,4-bis(dimethylsilyl)benzene, and 0.05-0.08 parts of chloroplatinic acid are added.
5. The method of claim 1, wherein the aluminum alloy photovoltaic frame is based on the anti-PID effect. In step S22, 2-2.5 parts of benzotriazole fluoride intermediate and 1 part of allyl oxalate are added.
6. The method of claim 1, wherein the aluminum alloy photovoltaic frame is based on the anti-PID effect. In step S23, the anti-PID coating is composed of 25-32 parts of methyl acrylate, 28-35 parts of butyl acrylate, 15-22 parts of modified monomer, 18-27 parts of hexanediol diacrylate, 5-6 parts of isobornyl acrylate, 30-45 parts of diluent, 15-21 parts of silica filler, 1-5 parts of zinc acrylate additive, and 5-8 parts of photocuring agent.
7. The method of claim 1, wherein the aluminum alloy photovoltaic frame is based on the anti-PID effect. In step S23, the diluent is acetone; the photocuring agent is at least one of photocuring agent 1173 and photocuring agent TPO.
8. An aluminum alloy photovoltaic frame prepared by the processing method according to any one of claims 1-7.
Citation Information
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