Device and method for growing cadmium zinc telluride single crystal by horizontal method

Abstract

The invention discloses a device and a method for growing a cadmium zinc telluride single crystal by a horizontal method, and relates to the technical field of semiconductor material preparation. Comprising a mounting base, the mounting base is provided with a processing mechanism used for growing the tellurium-zinc-cadmium single crystal through a horizontal method, a pressing plate structure ensures that seed crystals are firmly fixed, displacement in the growth process is avoided, polycrystalline materials make direct contact with the seed crystals to promote welding, the bottom of a raw material containing area is of a conical structure, melt flowing can be guided, interface defects are reduced, and the production efficiency is improved. The single crystal growth boat main body filled with the seed crystal and the polycrystal material is placed in the quartz baking material pipe, a small amount of gap is reserved between the seed crystal and the polycrystal material for placing the cadmium compensation material, a certain amount of high-purity cadmium is calculated and placed according to the residual space amount for cadmium compensation, and the fastening plug is used for sealing one end of the quartz baking material pipe, so that the chemical stability of the quartz material is high; cadmium compensation is achieved through the gap design, cadmium volatilization is counteracted, component balance is maintained, and crystal defects are reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material preparation, and in particular to a device and method for growing cadmium zinc telluride single crystals by a horizontal method. Background Art

[0002] As the substrate material for the infrared material mercury cadmium telluride and a room-temperature nuclear radiation detection material, cadmium zinc telluride single crystals possess technical advantages that cannot be replaced by scintillator materials and semiconductor materials such as germanium, making cadmium zinc telluride single crystals an irreplaceable material in applications such as medical imaging and infrared detection.

[0003] Traditional seed crystals are placed directly inside the cavity. Under the conditions of high-temperature melt flow and drastic temperature changes, the seed crystals are prone to shifting or loosening, resulting in uncontrolled single crystal growth direction, large crystal orientation deviation, low single crystal rate, lack of an effective cadmium volatilization compensation mechanism, difficulty in maintaining melt composition balance, and complex installation and disassembly processes requiring collaborative operation by multiple people. Therefore, the present invention provides an apparatus and method for growing cadmium zinc telluride single crystals by a horizontal method.

[0004] Invention content

[0005] In response to the shortcomings of the existing technology, the present invention provides a device and method for growing cadmium zinc telluride single crystals by a horizontal method, which solves the problems that in traditional seed crystals, which are directly placed inside the cavity and easily deviate or loosen under the conditions of high-temperature melt flow and drastic temperature changes, the seed crystals are prone to deviation or loosening, resulting in uncontrolled single crystal growth direction, large crystal orientation deviation, low single crystal rate, lack of an effective cadmium volatilization compensation mechanism, difficulty in maintaining melt composition balance, and complex installation and disassembly processes requiring collaborative operation by multiple people.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solutions: A device for growing a CdZnTe single crystal by a horizontal method includes a mounting base, on which a processing mechanism for growing the CdZnTe single crystal by a horizontal method is provided, the processing mechanism including:

[0007] A processing assembly includes a furnace body provided on a mounting base, a furnace body provided inside the furnace body, a quartz baking tube placed inside the furnace body, a single crystal growth boat body placed inside the quartz baking tube, a seed crystal cavity provided at one end of the single crystal growth boat body, and a raw material placement area provided inside the single crystal growth boat body on one side of the seed crystal cavity;

[0008] The installation component includes a fastening plug threadedly connected to one end of a quartz baking tube, a cavity groove provided inside the fastening plug, a movable tooth block connected by an elastic component provided inside the cavity groove, a push block connected by a rotating component provided on one side of the movable tooth block, a connecting block provided at the other end of the quartz baking tube, a card slot provided inside the connecting block, a push-pull rod slidingly connected through one end of the furnace body, a slide rail bracket fixed to the end of the push-pull rod close to the connecting block, a splint connected by an opening and closing component provided inside the slide rail bracket, and a card block corresponding to the card slot fixed on the inner wall of the splint.

[0009] Preferably, the furnace body is a cylindrical structure made of high temperature resistant material, and the single crystal growth boat body is completely placed in the quartz baking tube with a small gap between the two, and a small gap is left between the two for placing cadmium compensation material.

[0010] Preferably, the raw material placement area is loaded with cadmium zinc telluride polycrystalline material and is in contact with the seed crystal loaded in the seed crystal cavity. The single crystal growth boat body is made of pyrolytic boron nitride material with a seed crystal cavity, or high-purity quartz material with high-quality carbon plating treatment.

[0011] Preferably, a bolt is provided at the upper end of the single crystal growth boat body located in the seed crystal cavity, a pressure plate is slidably connected to the inner wall of the seed crystal cavity, and the bolt is rotatably connected to the pressure plate.

[0012] Preferably, a positioning ring is fixed at the edge of the fastening plug to contact the quartz baking tube, the elastic component includes a spring fixed to the inner wall of the cavity groove, the movable tooth block is fixedly connected to the other end of the spring, and the inner wall of the cavity groove is provided with a guide groove for the sliding of the movable tooth block.

[0013] Preferably, the rotating assembly includes a connecting shaft rotatably connected to one side of the movable gear block, and the push block is rotatably connected at the other end of the connecting shaft. A bonding plate is fixed to one side of the push block, and the bonding plate is located on one side of the single crystal growth boat body.

[0014] Preferably, the opening and closing assembly includes a fixed block arranged inside the push-pull rod, the fixed block is rotatably connected to a handwheel shaft, the push-pull rod is located at one end of the slide rail bracket and a slide groove is opened inside the slide groove, the internal rotation of the slide groove is connected to a screw, and the handwheel shaft is fixedly connected to the screw, the inner wall of the slide groove is slidably connected to a slider, the slider and the screw are threadedly connected, and movable rods connected by a rotating shaft are provided on both sides of the slider, the splint is located at the inner wall of the slide rail bracket and is slidably connected, the other end of the movable rod is rotatably connected to the splint through the rotating shaft, a pair of sliding rods are fixed on the inner wall of the slide rail bracket, the splint is slidably connected to the slide rod, and the upper end surface of the mounting base is located at the outlet of the furnace body and support rollers are evenly distributed.

[0015] The present invention also discloses a method for growing a cadmium zinc telluride single crystal by a horizontal method, which is characterized by comprising the following steps:

[0016] Step 1: Load high-quality CdZnTe seed crystals into the seed crystal cavity of the single crystal growth boat body, secure the seed crystals with bolts and pressure plates, and load CdZnTe polycrystalline material into the raw material placement area to ensure contact with the seed crystals. The cone-shaped structure at the bottom of the raw material placement area guides the melt flow and reduces interface defects.

[0017] Step 2: Place the main body of the single crystal growth boat into the quartz baking tube, place high-purity cadmium compensation material in the gap between the two, screw in the fastening plug, seal the tube mouth with a positioning ring, and use a spring to push the movable tooth block to press the single crystal growth boat to prevent shaking. The quartz material prevents melt contamination, and the cadmium compensation maintains composition balance.

[0018] Step 3. Finally, place the quartz baking tube into the furnace body, turn the handwheel shaft to push the clamping plate so that the clamping block is embedded in the slot and fixed. The furnace body is heated to melt the polycrystalline material and weld the seed crystal.

[0019] Beneficial effects

[0020] The present invention provides a device and method for growing cadmium zinc telluride single crystals using a horizontal method. Compared with the prior art, the device and method have the following advantages:

[0021] First, the present invention loads high-quality cadmium zinc telluride seed crystals into the seed crystal cavity of the single crystal growth boat body, and fixes the seed crystals by bolts and pressure plates to ensure that the seed crystals are in a stable position during the single crystal growth process, avoiding seed crystal deviation due to melt flow or temperature changes, thereby ensuring the directionality and consistency of single crystal growth and improving the single crystal rate. Then, cadmium zinc telluride polycrystalline material is loaded into the raw material placement area of ​​the single crystal growth boat body to ensure that the polycrystalline material is in contact with the seed crystal. After the seed crystal is placed in the seed crystal cavity, the pressure plate is driven by bolts to fix it. The polycrystalline material in the raw material placement area contacts the seed crystal and grows directionally along the seed crystal after melting. The pressure plate structure ensures that the seed crystal is firmly fixed. Solid, avoid displacement during the growth process, the polycrystalline material and the seed crystal are in direct contact to promote welding, and the bottom of the raw material placement area is a cone-shaped structure, which can guide the melt flow and reduce interface defects. The single crystal growth boat body containing the seed crystal and polycrystalline material is placed in the quartz baking tube, and a small amount of space is left between the two for placing cadmium compensation material. A certain amount of high-purity cadmium is calculated and placed according to the remaining space for cadmium compensation. One end of the quartz baking tube is sealed with a fastening plug. The quartz material has high chemical stability and avoids reaction with the melt. The gap design realizes cadmium compensation, offsets cadmium volatilization, maintains composition balance, and reduces crystal defects.

[0022] Secondly, when the fastening plug of the present invention is screwed into the quartz baking tube, the positioning ring seals the tube mouth, the spring pushes the movable tooth block to slide along the guide groove, and the movable tooth block drives the push block through the connecting shaft, so that the bonding plate presses the main body of the single crystal growth boat. The elastic pressing structure ensures that the growth boat is limited in the quartz tube to prevent it from shaking. The detachable design facilitates loading and maintenance, and improves operational convenience.

[0023] Thirdly, the present invention rotates the handwheel shaft to drive the screw to rotate, and the slider moves along the slide groove, and the splint is pushed to slide on the slide rod through the movable rod, so that the card block is embedded in the card groove of the connecting block, and the quartz baking tube is fixed in the furnace body. The supporting roller supports the quartz tube, which is convenient for pushing in or out. The card block is embedded in the card groove of the connecting block to pull the push-pull rod, which is convenient for sending the quartz baking tube into and out of the furnace, and at the same time it is convenient for fixing the internal quartz baking tube. The rotating design of the handwheel shaft simplifies the installation process. A single person can complete the fixing and disassembly of the quartz baking tube by rotating the handwheel, which greatly shortens the installation and disassembly time of the quartz baking tube, improves production efficiency, and makes the entire single crystal growth process more efficient and smooth. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0025] Figure 2 This is a schematic diagram of the main structure of the furnace body of the present invention;

[0026] Figure 3 It is a schematic diagram of the slider structure of the present invention;

[0027] Figure 4 This is a schematic diagram of the main structure of the single crystal growth boat of the present invention;

[0028] Figure 5 It is a schematic diagram of the push block structure of the present invention.

[0029] In the figure: 1. Mounting base; 2. Furnace body; 201. Furnace body; 202. Quartz baking tube; 203. Single crystal growth boat body; 204. Seed crystal cavity; 205. Bolt; 206. Press plate; 207. Raw material placement area; 3. Fastening plug; 301. Positioning ring; 302. Cavity groove; 303. Spring; 304. Movable gear block; 305. Connecting shaft; 306. Push block; 307. Laminating plate; 308. Guide groove; 4. Connecting block; 401. Card slot; 402. Push-pull rod; 403. Fixed block; 404. Handwheel shaft; 405. Slide groove; 406. Screw; 407. Slider; 408. Movable rod; 5. Slide rail bracket; 501. Slide rod; 502. Clamp; 503. Card block; 6. Support roller. DETAILED DESCRIPTION

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0031] See also Figure 1-Figure 5 The present invention provides a technical solution

[0032] A device for growing a cadmium zinc telluride single crystal by a horizontal method includes a mounting base 1. A processing mechanism for growing the cadmium zinc telluride single crystal by a horizontal method is provided on the mounting base 1. The processing mechanism includes:

[0033] A processing assembly includes a furnace body 2 disposed on a mounting base 1, a furnace body 201 disposed within the furnace body 2, a quartz baking tube 202 disposed within the furnace body 201, a single crystal growth boat body 203 disposed within the quartz baking tube 202, a seed crystal cavity 204 disposed at one end of the single crystal growth boat body 203, and a raw material placement area 207 disposed within the single crystal growth boat body 203 on one side of the seed crystal cavity 204;

[0034] The installation component includes a quartz baking tube 202 with a fastening plug 3 threadedly connected at one end, a cavity groove 302 is provided inside the fastening plug 3, a movable tooth block 304 connected by an elastic component is provided inside the cavity groove 302, and a push block 306 connected by a rotating component is provided on one side of the movable tooth block 304, and a connecting block 4 is provided at the other end of the quartz baking tube 202, and a card slot 401 is provided inside the connecting block 4, and one end of the furnace body 201 is slidably connected with a push-pull rod 402, and a slide rail bracket 5 is fixed to the end of the push-pull rod 402 close to the connecting block 4, and a splint 502 connected by an opening and closing component is provided inside the slide rail bracket 5, and a card block 503 corresponding to the card slot 401 is fixed on the inner wall of the splint 502.

[0035] In a preferred embodiment, the furnace body 2 is a cylindrical structure made of high-temperature resistant material. The single crystal growth boat body 203 is completely placed in the quartz baking tube 202, leaving a small gap between the two, and a small gap is left between the two for the placement of cadmium compensation material. The raw material placement area 207 is loaded with cadmium zinc telluride polycrystalline material and is in contact with the seed crystal loaded in the seed crystal cavity 204. The single crystal growth boat body 203 is made of pyrolytic boron nitride material with a seed crystal cavity 204, or high-purity quartz material that has been subjected to high-quality carbon plating.

[0036] In a preferred embodiment, a bolt 205 is provided at the upper end of the single crystal growth boat body 203 located in the seed crystal cavity 204, and a pressure plate 206 is slidably connected to the inner wall of the seed crystal cavity 204. The bolt 205 is rotatably connected to the pressure plate 206 to fix the seed crystal.

[0037] Place high-quality CdZnTe seed crystals into the seed crystal cavity 204 of the single crystal growth boat body 203 and secure the seed crystals with bolts 205 and a pressure plate 206;

[0038] The cadmium zinc telluride polycrystalline material is loaded into the raw material placement area 207 of the single crystal growth boat body 203 to ensure that the polycrystalline material contacts the seed crystal. After the seed crystal is placed in the seed crystal cavity 204, the pressure plate 206 is driven by the bolt 205 to fix it. The polycrystalline material in the raw material placement area 207 contacts the seed crystal and grows directionally along the seed crystal after melting. The pressure plate 206 structure ensures that the seed crystal is firmly fixed to prevent displacement during the growth process. The direct contact between the polycrystalline material and the seed crystal promotes welding. The bottom of the raw material placement area 207 has a cone-shaped structure, which can guide the melt flow and reduce interface defects.

[0039] Then, the single crystal growth boat body 203 containing the seed crystal and polycrystalline material is placed into the quartz baking tube 202, leaving a small gap between the two for placing cadmium compensation material. A certain amount of high-purity cadmium is calculated and placed according to the remaining space for cadmium compensation. A fastening plug 3 is used to seal one end of the quartz baking tube 202. The quartz material has high chemical stability and avoids reaction with the melt. The gap design realizes cadmium compensation, offsets cadmium volatilization, maintains component balance, and reduces crystal defects.

[0040] Furthermore, the assembled quartz baking tube 202 is placed into the furnace body 201 of the furnace body 2, and the furnace body 2 is heated to heat the polycrystalline material to melt it and fuse the seed crystal.

[0041] In a preferred embodiment, a positioning ring 301 is fixed at the edge of the fastening plug 3 to contact the quartz baking tube 202, the elastic component includes a spring 303 fixed to the inner wall of the cavity groove 302, the movable tooth block 304 is located at the other end of the spring 303 and fixedly connected, the inner wall of the cavity groove 302 is provided with a guide groove 308 for the sliding of the movable tooth block 304, the rotating component includes a connecting shaft 305 rotatably connected to one side of the movable tooth block 304, the push block 306 is located at the other end of the connecting shaft 305 and rotatably connected, a bonding plate 307 is fixed to one side of the push block 306, and the bonding plate 307 is located on one side of the single crystal growth boat body 203.

[0042] Among them, when the fastening plug 3 is screwed into the quartz baking tube 202, the positioning ring 301 seals the tube mouth, and the spring 303 pushes the movable tooth block 304 to slide along the guide groove 308. The movable tooth block 304 drives the push block 306 through the connecting shaft 305, so that the bonding plate 307 presses the single crystal growth boat body 203. The elastic pressing structure ensures that the growth boat is limited in position in the quartz tube to prevent it from shaking. The detachable design facilitates loading and maintenance, and improves operational convenience.

[0043] In a preferred embodiment, the opening and closing assembly includes a fixed block 403 arranged inside the push-pull rod 402, and the fixed block 403 is rotatably connected to the handwheel shaft 404. The push-pull rod 402 is located at one end of the slide rail bracket 5 and is provided with a slide groove 405. The slide groove 405 is internally rotatably connected to a screw 406, and the handwheel shaft 404 is fixedly connected to the screw 406. The inner wall of the slide groove 405 is slidably connected to a slider 407. The slider 407 is threadedly connected to the screw 406. Both sides of the slider 407 are provided with movable rods 408 that are connected by a rotating shaft. The splint 502 is located on the inner wall of the slide rail bracket 5 and is slidably connected. The other end of the movable rod 408 is rotatably connected to the splint 502 through the rotating shaft. A pair of slide rods 501 are fixed to the inner wall of the slide rail bracket 5, and the splint 502 is slidably connected to the slide rod 501. The upper end surface of the mounting base 1 is located at the outlet of the furnace body 201 The support rollers 6 are evenly distributed, and the handwheel shaft 404 drives the screw 406 to rotate, and the slider 407 moves along the slide groove 405, and the movable rod 408 pushes the splint 502 to slide on the slide rod 501, so that the block 503 is embedded in the slot 401 of the connecting block 4, fixing the quartz baking tube 202 in the furnace body 201, and the support roller 6 supports the quartz tube, which is convenient for pushing in or out. The block 503 is embedded in the slot 401 of the connecting block 4 and the push-pull rod 402 is pulled, which is convenient for sending the quartz baking tube 202 into or out of the furnace, and at the same time, it is convenient for fixing the internal quartz baking tube 202. The rotating design of the handwheel shaft 404 simplifies the installation process. A single person can complete the fixing and removal of the quartz baking tube by rotating the handwheel, which greatly shortens the installation and removal time of the quartz baking tube, improves production efficiency, and makes the entire single crystal growth process more efficient and smooth.

[0044] Specifically, the movable rods 408 on both sides of the slider 407 use the rotation axis as a fulcrum to convert the linear motion of the slider 407 into the opening and closing motion of the splint 502. The splint 502 slides along the slide rod 501, so that the card block 503 is embedded in or out of the card slot 401 of the connecting block 4.

[0045] Meanwhile, the contents not described in detail in this specification belong to the prior art known to those skilled in the art.

[0046] The present invention also discloses a method for growing a cadmium zinc telluride single crystal by a horizontal method, which is characterized by comprising the following steps:

[0047] Step 1: Load high-quality CdZnTe seed crystals into the seed crystal cavity 204 of the single crystal growth boat body 203. Secure the seed crystals with bolts 205 and a pressure plate 206. Load CdZnTe polycrystalline material into the raw material placement area 207 to ensure contact with the seed crystals. The cone-shaped structure at the bottom of the raw material placement area 207 guides the melt flow and reduces interface defects.

[0048] Step 2: Then place the single crystal growth boat body 203 into the quartz baking tube 202, place high-purity cadmium compensation material in the gap between the two, screw in the fastening plug 3, and seal the tube mouth with the positioning ring 301. The spring 303 pushes the movable tooth block 304 to press the single crystal growth boat to prevent shaking. The quartz material prevents melt contamination, and the cadmium compensation maintains the composition balance.

[0049] Step 3: Place the quartz baking tube 202 into the furnace body 201, rotate the handwheel shaft 404 to push the clamping plate 502, so that the clamping block 503 is embedded in the clamping slot 401 and fixed, and heat the furnace body to melt the polycrystalline material and weld the seed crystal.

[0050] Step 4. The horizontal single crystal furnace adopts a multi-temperature zone independent heating design. Each temperature zone achieves precise heating through program control. The furnace body and furnace chamber adopt an axisymmetric structure to ensure uniform distribution of the temperature field and avoid local overheating or overcooling. During heating, the program controls each temperature zone according to the preset temperature curve, so that the polycrystalline material gradually melts and fuses with the seed crystal to form a stable melting zone. The multi-temperature zone program control realizes precise temperature gradient, reduces melt convection, and reduces dislocation density.

[0051] Step 5: The program controls the heating section to completely melt the polycrystalline material. A liquid-solid phase transition zone is formed at the contact interface between the molten material and the seed crystal. By precisely controlling the temperature gradient, the molten material starts to directionally solidify from the end of the seed crystal, achieving stable expansion of the crystal nucleus. The temperature gradient drives the atoms in the melt to arrange according to the lattice. The seed crystal acts as a crystal nucleus to guide the growth of the single crystal and avoid the formation of polycrystalline.

[0052] Step 6: During the single crystal growth phase, the program lowers the temperature of each temperature zone at a set rate. The molten zone gradually solidifies from the high temperature to the low temperature end. Horizontal directional growth ensures that the crystal expands along the direction of the seed crystal, reducing defects.

[0053] Step 7: Orderly cooling to control the solid-liquid interface movement speed and maintain a low-defect single crystal structure; horizontal growth avoids lattice distortion caused by gravity.

[0054] Step 8: After the growth is completed, the single crystal is annealed in situ in the furnace at a constant temperature for a period of time to eliminate thermal stress. Then the furnace is slowly cooled to room temperature under program control. Annealing reduces residual stress and prevents cracking. Slow cooling avoids lattice defects caused by thermal shock and improves crystal integrity.

[0055] During operation, high-quality CdZnTe seed crystals are placed into the seed crystal cavity 204 of the single crystal growth boat body 203, and the seed crystals are fixed by rotating the pressure plate 206 via the bolts 205. Subsequently, CdZnTe polycrystalline material is placed into the raw material placement area 207 and ensured to be in contact with the seed crystals.

[0056] The single crystal growth boat body 203 is placed into the quartz baking tube 202. The gap between the two is used to place high-purity cadmium compensation material. When the fastening plug 3 is screwed in, the positioning ring 301 seals the tube opening, and the spring 303 pushes the movable tooth block 304 to slide along the guide groove 308. The connecting shaft 305 drives the push block 306 and the bonding plate 307 to press the single crystal growth boat body 203 to prevent it from shaking.

[0057] Place the assembled quartz baking tube 202 into the furnace body 201, turn the handwheel shaft 404 to drive the screw 406 to rotate, the slider 407 moves along the slide groove 405, and the movable rod 408 pushes the splint 502 to slide along the slide rod 501, so that the clamping block 503 is embedded in the clamping groove 401 of the connecting block 4, fixing the quartz baking tube 202, and the supporting roller shaft 6 assists it in being pushed in or out smoothly.

[0058] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0059] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A device for growing cadmium zinc telluride single crystals by a horizontal method, comprising a mounting base (1), characterized in that: The mounting base (1) is provided with a processing mechanism for growing a cadmium zinc telluride single crystal using a horizontal method, the processing mechanism comprising: A processing assembly comprises a furnace body (2) provided on a mounting base (1), a furnace body (2) provided inside the furnace body (2), a quartz baking tube (202) placed inside the furnace body (201), a single crystal growth boat body (203) placed inside the quartz baking tube (202), a seed crystal cavity (204) provided at one end of the single crystal growth boat body (203), and a raw material placement area (207) provided inside the single crystal growth boat body (203) on one side of the seed crystal cavity (204); The installation component includes a quartz baking tube (202) having a fastening plug (3) threadedly connected at one end thereof, a cavity groove (302) provided inside the fastening plug (3), a movable tooth block (304) connected via an elastic component provided inside the cavity groove (302), a push block (306) connected via a rotating component provided on one side of the movable tooth block (304), a connecting block (4) provided at the other end thereof, a card slot (401) provided inside the connecting block (4), a push-pull rod (402) slidably connected through one end of the furnace body (201), a slide rail bracket (5) fixed to one end of the push-pull rod (402) close to the connecting block (4), a clamping plate (502) connected via an opening and closing component provided inside the slide rail bracket (5), and a clamping block (503) corresponding to the card slot (401) fixed on the inner wall of the clamping plate (502).

2. The apparatus for growing CdZnTe single crystals by a horizontal method according to claim 1, characterized in that: The furnace body (2) is a cylindrical structure made of high temperature resistant material. The single crystal growth boat body (203) is completely placed in the quartz baking tube (202), with a small gap between the two, and a small gap is left between the two for placing cadmium compensation material.

3. The apparatus for growing CdZnTe single crystals by a horizontal method according to claim 1, wherein: The raw material placement area (207) is loaded with cadmium zinc telluride polycrystalline material and is in contact with the seed crystal loaded in the seed crystal cavity (204). The single crystal growth boat body (203) is made of pyrolytic boron nitride material with the seed crystal cavity (204), or high-purity quartz material that has been subjected to high-quality carbon plating treatment.

4. The apparatus for growing a CdZnTe single crystal by a horizontal method according to claim 1, wherein: The single crystal growth boat body (203) is provided with a bolt (205) at the upper end of the seed crystal cavity (204); the inner wall of the seed crystal cavity (204) is slidably connected with a pressure plate (206); and the bolt (205) is rotatably connected to the pressure plate (206).

5. The apparatus for growing a CdZnTe single crystal by a horizontal method according to claim 1, wherein: A positioning ring (301) is fixed at the edge of the fastening plug (3) and contacts the quartz baking tube (202). The elastic component includes a spring (303) fixed to the inner wall of the cavity groove (302). The movable tooth block (304) is located at the other end of the spring (303) and is fixedly connected. The inner wall of the cavity groove (302) is provided with a guide groove (308) for the sliding of the movable tooth block (304).

6. The apparatus for growing CdZnTe single crystals by a horizontal method according to claim 1, characterized in that: The rotating assembly includes a connecting shaft (305) rotatably connected to one side of the movable gear block (304), and the push block (306) is located at the other end of the connecting shaft (305) and is rotatably connected. A bonding plate (307) is fixed to one side of the push block (306), and the bonding plate (307) is located on one side of the single crystal growth boat body (203).

7. The apparatus for growing CdZnTe single crystals by a horizontal method according to claim 1, characterized in that: The opening and closing assembly includes a fixed block (403) provided inside the push-pull rod (402), the fixed block (403) is connected to a hand wheel shaft (404) for rotation, the push-pull rod (402) is provided with a slide groove (405) at one end of the slide rail bracket (5), the slide groove (405) is connected to a screw rod (406) for rotation inside, and the hand wheel shaft (404) is fixedly connected to the screw rod (406), the inner wall of the slide groove (405) is connected to a slider (407) for sliding, and the slider (407) and the screw rod (406) are screwed together. The slide block (407) is connected by a groove, and movable rods (408) are provided on both sides of the slide block (407) and are connected by a rotating shaft. The clamping plate (502) is located on the inner wall of the slide rail bracket (5) and is slidably connected. The other end of the movable rod (408) is rotatably connected to the clamping plate (502) through the rotating shaft. A pair of slide rods (501) are fixed on the inner wall of the slide rail bracket (5). The clamping plate (502) is slidably connected to the slide rods (501). The upper end surface of the mounting base (1) is located at the outlet of the furnace body (201) and is evenly distributed with support rollers (6).

8. A method for growing a cadmium zinc telluride single crystal by a horizontal method, using the apparatus for growing a cadmium zinc telluride single crystal by a horizontal method according to any one of claims 1 to 7, characterized in that: The following steps are involved: Step 1: Load a high-quality CdZnTe seed crystal into the seed crystal cavity (204) of the single crystal growth boat body (203), fix the seed crystal by means of bolts (205) and a pressure plate (206), and load the CdZnTe polycrystalline material into the raw material placement area (207) to ensure contact with the seed crystal. The cone-shaped structure at the bottom of the raw material placement area (207) guides the melt flow and reduces interface defects. Step 2: Then place the single crystal growth boat body (203) into the quartz baking tube (202), place high-purity cadmium compensation material in the gap between the two, screw in the fastening plug (3), and seal the tube mouth with a positioning ring (301). The spring (303) pushes the movable tooth block (304) to press the single crystal growth boat to prevent shaking. The quartz material prevents melt contamination, and the cadmium compensation maintains the composition balance. Step 3: Finally, place the quartz baking tube (202) into the furnace body (201), rotate the handwheel shaft (404) to push the clamping plate (502), so that the clamping block (503) is embedded in the clamping groove (401) and fixed, and the furnace body is heated to melt the polycrystalline material and weld the seed crystal.

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