Mask manufacturing method and exposure system

Abstract

The invention discloses a method for manufacturing a mask and an exposure system, and the method comprises the steps: exposing a material strip to obtain a first strip section with a plurality of first patterns, the material strip comprises a strip-shaped foil and a photoresist layer on the surface, a spacer region exists between two adjacent first patterns, and each first pattern comprises a first mark sub-pattern and a plurality of pixel holes; sequentially exposing the plurality of spacer regions by using a set photomask to obtain a second strip section with a plurality of second patterns, the set photomask comprising an alignment mark region and an auxiliary pattern region corresponding to the first mark sub-patterns, the alignment mark region comprising alignment marks matched with the first mark sub-patterns in shape, and the auxiliary pattern region comprising alignment marks matched with the first mark sub-patterns in shape; overlapping the alignment mark areas with the first mark sub-patterns, so that the alignment marks are aligned with the corresponding first mark sub-patterns; determining the offset distance of the alignment mark relative to the first mark sub-graph; and under the condition that the offset distance meets a set standard, exposing the corresponding interval by using a set photomask to obtain a corresponding second pattern.

Description

Technical Field

[0001] The invention relates to a mask manufacturing method and an exposure system. Background Art

[0002] In order to increase the production capacity of large-size OLED screens, many domestic fine metal mask (FMM) manufacturers are conducting research and development and production of high-generation FMM.

[0003] Currently, larger parallel exposure machines are commonly used for overall exposure of high-generation FMMs. However, China currently does not have the production capacity of exposure machines for high-generation FMMs and their large-size masks. It usually relies on foreign imports and is expensive. In addition, since the sizes of the mask, exposure area and exposure machine of the high-generation FMM are increased, this is not compatible with the existing small-size exposure machines of the low-generation FMM. The small-size exposure machines and masks of the low-generation FMM cannot be improved to a higher generation, which further increases the manufacturing cost of the high-generation FMM, which is not conducive to the cost reduction and market popularity of the terminal product OLED screen.

[0004] Therefore, developing an alternative solution for high-generation FMM exposure so that existing small-size exposure machines can realize the processing and production of high-generation large-size FMMs, improve the efficiency of exposure machines, and reduce economic costs is an urgent problem to be solved in this field. Summary of the Invention

[0005] The present invention aims to solve one of the technical problems in the related art to a certain extent. To this end, the present invention provides a mask manufacturing method and an exposure system.

[0006] To achieve the above objectives, as a first aspect of the present invention, a method for manufacturing a mask is provided, comprising: exposing a material strip to obtain a first band segment having a plurality of first patterns, wherein the material strip comprises a strip-shaped foil material and a photoresist layer formed on a surface of the strip-shaped foil material, a spacer exists between two adjacent first patterns, and the first patterns comprise a first mark sub-pattern and a plurality of pixel holes; Sequentially exposing the plurality of spacer regions using a set photomask to obtain second band segments having a plurality of second patterns, wherein the set photomask includes an alignment mark region corresponding to the first mark sub-pattern, and an auxiliary pattern region corresponding to the spacer region adjacent to the first mark sub-pattern, the alignment mark region including an alignment mark having a shape matching that of the first mark sub-pattern. Exposing the spacer regions using the set photomask includes: Overlapping the alignment mark area with the first pattern so that the alignment mark is aligned with the corresponding first mark sub-pattern; Determining an offset distance of the alignment mark relative to the first mark sub-pattern; When the offset distance meets the set standard, the corresponding interval is exposed using the set mask to obtain the corresponding second pattern.

[0007] Furthermore, the step of determining the offset distance of the alignment mark relative to the first mark sub-pattern includes: Determining a lateral offset distance and a longitudinal offset distance of the alignment mark relative to the first mark sub-pattern along the length and width directions of the material strip; When the lateral offset distance or the longitudinal offset distance exceeds the set distance, the offset distance of the alignment mark relative to the first mark sub-pattern is reduced to below the set distance by moving the lateral or longitudinal position of the material tape or the set mask.

[0008] Furthermore, the first graphic has a first wide side and a second wide side relative to each other, the first mark sub-graphic includes a plurality of first marks and a plurality of second marks, the first marks are located on the first wide side, the second marks are located on the second wide side, the second marks correspond to the first marks, and the first marks and the second marks are respectively used to align with the spacing areas on both sides of the first graphic.

[0009] Furthermore, a plurality of the first marks are spaced apart along the length direction of the material strip, and in the step of determining the offset distance of the alignment mark relative to the first mark sub-graph, it also includes: determining the angle between the connecting line of adjacent first marks and the connecting line of corresponding adjacent alignment marks as the deflection angle, and when the deflection angle exceeds the set angle, the deflection angle is reduced by reducing the deflection angle of the material strip along the transmission direction, or by reducing the deflection angle of the set mask along the transmission direction.

[0010] Furthermore, the first mark sub-graph includes at least 4 first marks, at least 2 of the first marks are spaced apart on one long side close to the material tape, and at least 2 of the first marks are spaced apart on the other long side close to the material tape, for determining the deflection angle of the set mask relative to the two long sides of the material tape.

[0011] Furthermore, the first pattern further includes at least one center hole and at least two alignment holes, the center hole being located at the center of the pixel hole, and at least one alignment hole being located in the middle of any one wide side of the first pattern relative to the width direction of the material strip, so that a line connecting the center hole and the alignment holes has a first direction, and the first direction is consistent with the length direction of the material strip. The second graphic includes a fixing hole, which is located in the middle of the second graphic relative to the width direction of the material strip. The angle between the line connecting the center hole and the fixing hole and the first direction forms an offset angle. The offset angle is used to display the rotation angle of the second graphic formed by exposure relative to the corresponding first graphic, and the offset angle does not exceed the set angle.

[0012] Furthermore, the spacer includes a first spacer and a second spacer, the first spacer is adjacent to the first wide side, the second spacer is adjacent to the second wide side, the second pattern includes a first mesh pattern and a second mesh pattern, the first mesh pattern corresponds to the first spacer, and the second mesh pattern corresponds to the second spacer. The setting mask includes a first screen area for exposing a first screen pattern and a second screen area for exposing a second screen pattern. The first mark is used for aligning the first screen area with the first pattern, and the second mark is used for aligning the second screen area with the first pattern.

[0013] Furthermore, the exposing the material strip to obtain a first strip segment having a plurality of first patterns includes: pulling the material strip along a first length direction so that the material strip is sequentially exposed along the length direction to form a plurality of first patterns; The step of sequentially exposing the plurality of spaced areas using a set mask includes: Pulling the material strip along a second length direction, sequentially exposing a plurality of the first spaced areas by setting a first mesh area of ​​the mask to form a plurality of first mesh patterns, wherein the first length direction is opposite to the second length direction; The material strip is pulled along the first length direction, and a plurality of second spaced areas are exposed in sequence by setting a second mesh area of ​​the mask to form a plurality of second mesh patterns.

[0014] Furthermore, the step of exposing the material strip to obtain a first strip segment having a plurality of first patterns includes: A first photomask and a second photomask are used to perform a rough alignment process on the material strip, so that the exposure areas of the first photomask and the second photomask correspond to the material strip. The first photomask and the second photomask are arranged opposite each other and spaced apart for double-sided exposure of the material strip. The space between the first photomask and the second photomask is used for feeding the material strip through. A rough alignment mark is provided on the first photomask, and the rough alignment mark is used for alignment with the side edge of the material strip. Performing mask alignment processing on the first mask and the second mask so that the first mask and the second mask correspond to each other; Laminating the first photomask and the second photomask so that the material strip is clamped and fixed; The front and back sides of the material tape are simultaneously exposed by the first photomask and the second photomask so that the front and back sides of the material tape are exposed to form the first pattern, wherein the first pattern includes a front first pattern located on the front side and a back first pattern located on the back side, and the front first pattern and the back first pattern correspond to each other.

[0015] Furthermore, the step of performing a rough alignment process on the material strip using the first mask and the second mask includes: Aligning the rough alignment mark with the side edge of the material strip so that an exposure direction formed by connecting multiple to-be-exposed areas of the material strip is consistent with a conveying direction of the material strip; The step of performing mask alignment processing on the first mask and the second mask so that the first mask and the second mask correspond to each other includes: The first photomask is provided with master alignment marks at four corners, and the second photomask is provided with daughter alignment marks at four corners. The master alignment marks match the shapes of the daughter alignment marks, and the master alignment marks correspond to the daughter alignment marks one-to-one. The second photomask is overlapped with the first photomask so that the master alignment marks are aligned with the daughter alignment marks, and the offset value of the daughter alignment marks relative to the master alignment marks is determined. The position of the second mask or the first mask is adjusted so that the offset value is within a set range.

[0016] As a second aspect of the present invention, an exposure system is provided, comprising a transport mechanism, at least one setting mask, an alignment control mechanism, and at least one light source. The conveying mechanism is used to transport the material strip and reciprocate along the length direction of the material strip relative to the light source to expose each area of ​​the material strip in sequence. The setting mask is located on the light-emitting side of the light source, and the setting mask is provided with adjacent auxiliary and auxiliary graphic areas, the auxiliary area includes an alignment mark for alignment, and the auxiliary graphic area is used to expose the material strip to form a stretching area. The alignment control mechanism is used to obtain the offset distance information between the alignment mark on the set mask and the first mark sub-pattern formed on the material tape, and control the set mask and the conveying mechanism according to the offset distance information, and adjust the position of the set mask relative to the material tape so that the offset distance meets the set standard.

[0017] Furthermore, it comprises two setting light masks and two light sources, the two setting light masks are arranged opposite to each other and spaced apart, the two light sources are respectively located outside the two setting light masks, and the space between the two setting light masks is used for the feed belt to pass through.

[0018] Furthermore, the conveying mechanism includes a feeding mechanism, a receiving mechanism and a position control unit. The feeding mechanism and the receiving mechanism are arranged at intervals. The set light mask and the light source are located between the feeding mechanism and the receiving mechanism, so that the material strip is transported in the interval between the set light masks by the feeding mechanism unwinding and the receiving mechanism rewinding. The position control unit includes a controller and at least two detection components. The detection components are located at the unwinding mechanism and the receiving mechanism and are used to detect the transmission position of the material strip. The controller is used to control the unwinding mechanism and the receiving mechanism through the detector to realize the winding and unwinding of the material strip. The exposure system adjusts the moving position of the material strip through the position control unit.

[0019] Furthermore, the exposure system also includes a tensioning mechanism, which is used to provide exposure tension to the material strip. The tensioning mechanism includes a first pinching roller group and a second pinching roller group respectively located at the top and bottom of the set mask. The first pinching roller group and the second pinching roller group clamp and transport the material strip to form the set exposure tension.

[0020] The method for manufacturing a mask provided by the present invention is particularly suitable for a high-precision metal mask (FMM). It uses a large-size material strip as the exposure substrate. Through a unique exposure method, it can use an existing low-generation exposure machine to complete the exposure of a higher-generation large-size FMM. Through a special alignment method and the design of alignment marks, it is possible to achieve high alignment accuracy and exposure consistency during batch exposure of large-size material strips, thereby having the same size and evaporation effect as the FMM formed by high-generation exposure, and the present invention has a lower cost.

[0021] These features and advantages of the present invention will be further disclosed in the following detailed description and accompanying drawings. The preferred embodiments and means of the present invention will be fully illustrated in conjunction with the accompanying drawings, but are not intended to limit the technical solutions of the present invention. Furthermore, although multiple features, elements, and components may be present in each of the following text and accompanying drawings, they may be labeled with different symbols or numbers for convenience, but all represent components with the same or similar structure or function. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The present invention will be further described below in conjunction with the accompanying drawings: Figure 1 This is a flow chart of the traditional large-size precision metal mask manufacturing process; FIG2( a ) is a process flow chart of the mask manufacturing method of the present invention; FIG2( b ) is a process flow chart of the mask manufacturing method of the present invention; Figure 3 It is a schematic diagram of the conveying mechanism and exposure device of the present invention; Figure 4It is the alignment form of the alignment mark and the first mark sub-pattern of the present invention; Figure 5 Schematic diagram of an embodiment of the alignment mark of the present invention; Figure 6 is a schematic diagram of an embodiment of a first photomask of the present invention; Figure 7 is a schematic diagram of an embodiment of setting a light mask of the present invention; Figure 8 is a schematic diagram of another embodiment of setting a light mask of the present invention; Figure 9 is a schematic diagram of the deflection angle of the present invention; Figure 10 is a schematic diagram of a strip pattern after exposure of the present invention; Figure 11 is a schematic diagram of the stagger angle of the present invention; Figure 12 is a schematic diagram of the overall pattern of the material strip after exposure of the present invention; Figure 13 These are several forms of alignment offset listed in the present invention; Figure 14 is a flowchart of a specific embodiment of the mask manufacturing method of the present invention; Figure 15 This is an actual photograph of the alignment mark of the mask of the present invention.

[0023] Description of Reference Numerals 1: Material belt; 2: Exposure system; 3a: Unwinding mechanism; 3b: Rewinding mechanism; 30: First pinch roller group; 31: Second pinch roller group; 100: first mask; 101: pixel hole area; 102: first mark area; 103: center hole area; 104: alignment hole area; 102': first mark sub-pattern; θ: misalignment angle; 101': pixel hole; 103': center hole; 104': alignment hole; 105: master alignment mark; 200: Setting mask; 200a: Position mark area; 200b: Auxiliary pattern area; 2021: Position mark; 2010: Auxiliary stretching area; 2011: Overlay area; 2012: Fixing hole area; 2012': Fixing hole; DETAILED DESCRIPTION The following describes embodiments of the present invention in detail, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described in the embodiments are intended to explain the present invention and are not to be construed as limiting the present invention.

[0024] References in this specification to "one embodiment," "an example," or "an example" mean that a particular feature, structure, or characteristic described in connection with the embodiment itself can be included in at least one embodiment disclosed herein. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

[0025] The inventors have discovered that, considering the efficiency of single-panel screen segmentation, the current 6th-generation active-matrix organic light-emitting diode (AMOLED) production lines (G6, glass backplane size 1500*1850mm) are being upgraded to 8.6th-generation AMOLED production lines (G8.6, glass backplane size 2290*2620mm). Domestic G6 FMM production and supply has only begun to gain momentum in the past two years, while FMM production supporting the G8.6 AMOLED production lines is still in its infancy. In response to international industry trends, several domestic panel manufacturers have decided to invest in 8th-generation production lines (such as G8.6H) to produce medium-sized AMOLED displays or increase production of small smartphone displays. These production lines come with high investment costs, and the cost of the precision metal masks required for evaporation deposition in AMOLED display production is also very high. As AMOLED display substrates increase in size, the yellow light equipment required for FMM production must also be upgraded to 8th-generation sizes. This significantly increases FMM manufacturing costs.

[0026] Table 1 shows a comparison of the sizes of the current sixth-generation AMOLED production line and the new eighth-generation line.

[0027] Table 1. Dimensional examples of sixth-generation (G6H) and eighth-generation (G8.6H) AMOLED displays and FMM products.

[0028] Traditionally, as the AMOLED display manufacturing generations increase, the glass substrate size increases, and therefore the size of the equipment required to manufacture the precision metal mask also needs to increase. For example, the traditional manufacturing process flow chart Figure 1 shown.

[0029] The patterns designed on precision metal masks are transferred to the photoresist film in a single exposure using a large-scale 8th-generation exposure line, paired with a large-scale photomask. The 8th-generation exposure equipment and the required photomasks are very expensive, resulting in very high costs for producing large-scale FMMs.

[0030] To address the aforementioned issues, the present invention proposes a low-cost method for manufacturing the large-scale FMMs required for high-generation AMOLED production lines. This method utilizes innovative design and processes to produce large-scale precision metal masks on smaller, lower-generation production lines. This method enables the production of high-quality precision metal masks with low-cost equipment and production costs. The resulting large-scale precision metal masks are suitable for producing the high-quality precision metal mask strips required for vapor deposition of high-generation (G8 half-panel or larger) AMOLEDs. These precision metal masks also offer excellent performance when used as shadow masks for AMOLED thermal vapor deposition.

[0031] As a first aspect of the present invention, as shown in FIG2(a) and FIG2(b), a method for manufacturing a mask is provided, comprising: S100, exposing the material strip to obtain a first strip segment having a plurality of first patterns, wherein the material strip comprises a strip-shaped foil and a photoresist layer formed on a surface of the strip-shaped foil, a spacer is present between two adjacent first patterns, and the first pattern comprises a first mark sub-pattern and a plurality of pixel holes; S200, sequentially exposing the plurality of spacer regions using a set photomask to obtain second band segments having a plurality of second patterns, wherein the set photomask includes an alignment mark region corresponding to the first mark sub-pattern and an auxiliary pattern region corresponding to the spacer region adjacent to the first mark sub-pattern, the alignment mark region including an alignment mark having a shape matching that of the first mark sub-pattern, and exposing the spacer region using the set photomask includes: Overlapping the alignment mark area with the first mark sub-pattern so that the alignment mark is aligned with the corresponding first mark sub-pattern; determining an offset distance of the alignment mark relative to the first mark sub-pattern; When the offset distance meets the set standard, the corresponding interval is exposed using the set mask to obtain the corresponding second pattern.

[0032] The method for manufacturing a mask provided by the present invention is particularly suitable for a precision metal mask (FMM). A large-size material strip is used as the exposure substrate. Through a unique exposure method, the existing low-generation exposure machine can be used to complete the exposure of a higher-generation large-size FMM. Through a special alignment method and the design of alignment marks, high alignment accuracy and exposure consistency can still be achieved during batch exposure of large-size material strips, thereby having the same size and evaporation effect as the FMM formed by high-generation exposure, and the present invention has a lower cost.

[0033] In step S100, as an optional implementation, as Figure 3 、 Figure 6 and Figure 12As shown, the material strip 1 is pulled and transported along a first length direction, so that the material strip 1 is sequentially exposed along the length direction to form a plurality of first patterns. The plurality of first patterns are exposed in the order of A1, A2, A3, to An. This application does not impose any specific restrictions on the number of first patterns to be exposed, as long as the maximum length that the device can pull the material can meet. That is, the n in An is not limited and can be A4, A6, A8, A12, etc. In some embodiments, the conveying mechanism includes a material unwinding mechanism 3a, a material rewinding mechanism 3b, and a position control unit. The exposure system 2 for exposing and forming the first patterns is located between the material unwinding mechanism 3a and the material rewinding mechanism 3b, so that the material strip 1 can move within the exposure system 2 by being unwound and rewound, thereby sequentially exposing along the length direction to form the plurality of first patterns.

[0034] The exposure of the first pattern can be performed by contact mask exposure or laser exposure without a mask, preferably, as shown in FIG. Figure 10 As shown, the first pattern includes pixel holes 101', which requires higher precision. The line width precision of contact mask exposure is less than that of laser exposure. Therefore, contact mask exposure is preferred. The light corresponding to the first pattern is the first mask 100, as shown in FIG. Figure 6 As shown, the first mask 100 is provided with a pixel hole area 101, a first mark area 102, an alignment hole area 104, a center hole area 103 and a master alignment mark 105, so that the first mask 100 is used to expose in the first exposure area to form the following Figure 10 The corresponding pixel hole 101', the first mark sub-graphic 102', the alignment hole 104' and the center hole 103' are shown. The present application does not impose any special restrictions on the shape of the first mark sub-graphic 102' in the first graphic. Figure 4 As shown, it is only necessary to cooperate with the set mask 200 to form an alignment mark group.

[0035] In step S200, as an optional implementation, as Figure 7 、 Figure 8 or Figure 13 As shown, specifically including: Determine the lateral offset distance and the longitudinal offset distance of the alignment mark 2021 relative to the first mark sub-pattern 102' along the length and width directions of the material strip 1; When the lateral or longitudinal offset distance exceeds the set distance, the offset distance of the alignment mark 2021 relative to the first mark sub-pattern 102 ′ is reduced to less than the set distance by moving the strip 1 or setting the lateral or longitudinal position of the mask 200 .

[0036] Here we need to explain how to determine the offset and perform position correction through the alignment mark 2021, such as Figure 5 、 Figure 7 、 Figure 8 and Figure 13 As shown, when the first pattern has been exposed and formed, the setting mask 200 ( Figure 7 、 Figure 8 ), it is assumed that the mask 200 is provided with an alignment mark area 200a and an auxiliary pattern area 200b, the alignment mark area 200a is exposed to form an alignment mark 2021, and the second pattern includes an auxiliary stretching area 2010, a fixing hole area 2012 and an overlay area 2011, which are exposed to form corresponding auxiliary stretching patterns, fixing holes 2012' and overlay patterns.

[0037] like Figure 3 、 Figure 5 、 Figure 7 、 Figure 8 and Figure 13 As shown, the exposure system 2 of the present application aligns the set mask 200 in contact with the material belt 1 with the first exposure area that has been exposed and formed. Specifically, the material belt 1 is first pulled by the conveyor mechanism to place the spacer area under the exposure field of view, the set mask 200 is in contact with the material belt 1, and the alignment mark 2021 of the set mask 200 is used to align with the first mark sub-pattern 102' formed previously, that is, the alignment mark 2021 and the first mark sub-pattern 102' are overlapped and matched, and the corresponding image is captured and recognized by the field lens, as shown. Figure 4 or Figure 5 As shown, the offsets of the alignment mark 2021 area and the first mark sub-pattern 102' along the x and y directions are measured to obtain the offsets x1 and x2 in the x direction. When x1 and x2 are both within the set range, it means that the length direction position of the spacer has been corrected. When x1 and x2 are not within the set range, the position of the mask 200 can be corrected in the length direction by unwinding or rewinding or fine-tuning the position until x1 and x2 are within the set range.

[0038] Similarly, widthwise offset measurement is performed. Adjusting the widthwise position of the web 1 can be accomplished by fine-tuning the pressure of the unwinding or rewinding mechanism 3b, or by fine-tuning the position of the mask 200. The field of view lens and measurement calculations can be performed using a CMOS (Complementary Metal-Oxide Semiconductor) optical sensor or a CCD (Charged Coupled Device) optical sensor camera.

[0039] Figure 13 (a) is the ideal splicing exposure form of the second pattern and the first pattern. Figure 13 (b) indicates that the second figure is offset in the x and y directions relative to the first figure. Figure 13 (c) indicates that the second graph has an angular offset along the transmission direction relative to the first graph. Figure 13(d) indicates that the second figure is smaller than the first figure.

[0040] As an optional embodiment, the present application does not impose any special restrictions on the position of the first mark sub-graph 102' in the first graph, as long as it does not affect the pixel hole 101'. For example, the first mark sub-graph 102' includes multiple marks, which can be spaced apart along the length direction of the material strip 1. For another example, multiple marks can be spaced apart along the width direction of the material strip 1. As a preferred embodiment, Figure 10 As shown, the first graphic has a first wide side and a second wide side relative to each other, the first mark sub-graphic includes multiple first marks and multiple second marks, the first mark is located on the first wide side, the second mark is located on the second wide side, the second mark corresponds to the first mark, and the first mark and the second mark are respectively used to align with the spacing areas on both sides of the first graphic.

[0041] Generally, the longer material strip 1 has a longer exposure length relative to the cut FMM substrate, so it is more prone to alignment deviation, and the degree of this alignment deviation will gradually increase with the length. Preferably, each spacer area needs to be aligned with the corresponding first mark sub-pattern 102' before exposure.

[0042] The present application does not impose any particular restrictions on the shape of the first mark sub-pattern 102'; it only needs to be a symmetrical pattern that allows for precise alignment. Preferably, the first mark sub-pattern 102' includes at least one of a circle, a square, and a cross. The mark size depends on the design of the optical sensor of the exposure system 2 and the size of the inspection area. It is generally within the range of 500µm to 3500µm.

[0043] When the long-sized strips described in this application are spliced ​​for exposure, in addition to being prone to horizontal and vertical deviations, rotational deviations are more likely to occur, that is, there is an angle difference between the exposure transmission direction of the strip and its length direction. This is a very serious problem in the splicing exposure of long-sized strips. As the strips are gradually transmitted, the deviation caused by the rotation angle will become larger and larger. Figure 13 As shown in (c), in order to control this alignment error, as an optional implementation method, multiple first marks are spaced apart along the length direction of the material strip, such as Figure 9As shown, in the step of determining the offset distance of the alignment mark relative to the first mark sub-pattern, the method further includes: determining the angle between the line connecting adjacent first marks and the line connecting corresponding adjacent alignment marks as a deflection angle α. When the deflection angle exceeds a set angle, the deflection angle is reduced by reducing the deflection angle of the material strip along the transmission direction, or by reducing the deflection angle of the set mask along the transmission direction. The deflection angle is used to correct the direction of the spacer. This is because the single-point alignment mark 2021 is usually only able to detect the offset along the length or width direction. This meets the alignment accuracy for cut and formed FMM substrates. However, relying solely on the single-point alignment mark 2021 to determine the offset in the length or width direction is far from sufficient for the long-scale material strip 1. Therefore, the present application adds the angular relationship between adjacent marks to detect and correct the angular deflection of the material strip 1.

[0044] Preferably, the first mark sub-pattern 102' includes at least four first marks, with at least two first marks spaced apart near one long edge of the strip 1 and at least two first marks spaced apart near the other long edge of the strip 1. These marks are used to determine the deflection angle of the mask 200 relative to the two long edges of the strip 1. This ensures consistent alignment between the spaced areas on both sides of the first pattern, preventing shifting of the spaced areas due to variations in the alignment marks 2021. Exposure of longer strips 1 often results in wavy edges on one side of the long edge. Therefore, preferably, at least two first marks are provided on each long edge to facilitate alignment detection and position correction for each long edge. The distance between adjacent first marks along the length varies depending on the FMM product design, typically ranging from 2 mm to 70 mm. Preferably, the distance between two adjacent alignment marks 2021 is twice or greater (≥2D) the field of view diameter (D) of the optical detection sensor of the exposure system 2. The maximum distance between adjacent first marks in the width direction is only slightly smaller than the width of the material strip 1 and is between 50 mm and 720 mm.

[0045] The second mark of the present application is arranged symmetrically with respect to the first mark.

[0046] The present application also has a misalignment angle θ that can be detected after exposure molding. Specifically, Figure 10 and Figure 11As shown, the first graphic includes at least one center hole 103' and at least two alignment holes 104', the center hole 103' is located at the center of the pixel hole 101', and at least one alignment hole 104' is located in the middle of any wide side of the first graphic relative to the width direction of the material strip, so that the line connecting the center hole 103' and the alignment hole has a first direction, and the first direction is consistent with the length direction of the material strip. The second graphic includes a fixing hole 2012', and the fixing hole 2012' is located in the middle of the second graphic relative to the width direction of the material strip. The angle between the line connecting the center hole 103' and the fixing hole 2012' and the first direction forms a misalignment angle θ. The misalignment angle is used to indicate the rotation angle of the second graphic formed by exposure relative to the corresponding first graphic, and the misalignment angle does not exceed the set angle.

[0047] Ideally, if the misalignment angle does not exceed the set angle, fixing hole 2012' is located on the line connecting center hole 103' and alignment hole 104'. However, due to unavoidable precision errors, the included angle between center hole 103', alignment hole 104', and fixing hole 2012' forms a misalignment angle that does not exceed the set angle. The misalignment angle determined by center hole 103', alignment hole 104', and fixing hole 2012' can be used to monitor the angle of exposed strip 1. When the misalignment angle falls within the range, the exposure alignment accuracy of strip 1 is acceptable. If it does not, strip 1 is repaired, thereby improving product processing quality and process stability.

[0048] The calculation method of the misalignment angle is: θ=(△y / 2πr)*360°, where △y is the distance between the fixing hole 2012 ′ formed by actual exposure and the line connecting the center hole 103 ′ and the alignment hole 104 ′, and r is the distance between the center hole 103 ′ and the fixing hole 2012 ′.

[0049] It is worth noting that the misalignment angle of the graphic area defines the degree to which the graphic of a single product may be misaligned when produced using multiple exposures. This is different from the alignment mark 2021. The misalignment angle of the present invention is a product feature formed by the alignment method of the present invention. Currently, only the present invention uses the misalignment angle for calibration and monitoring.

[0050] This application does not impose any special restrictions on the pattern on the mask 200. In order to meet the demand of exposing a high-generation large-size FMM substrate with a low-generation small exposure machine, this application adopts a splicing exposure method, that is, the pixel hole 101' of the FMM and the auxiliary areas on both sides for stretching the net are exposed separately, so that the pixel area of ​​the FMM can be widened to the complete mask. The auxiliary area for stretching the net is additionally set with a mask or exposure area for secondary exposure molding. For example, the mask 200 can be set with only the auxiliary pattern for stretching the net, such as Figure 6 、 7As shown, for another example, the mask 200 can be provided with a first pattern and a net auxiliary pattern in the width direction, such as Figure 8 shown.

[0051] Usually the net-stretching auxiliary area is set on both sides of the pixel area, such as Figure 10 As shown, in some embodiments, the spacer includes a first spacer and a second spacer, the first spacer is adjacent to the first wide side, the second spacer is adjacent to the second wide side, the second pattern includes a first mesh pattern and a second mesh pattern, the first mesh pattern corresponds to the first spacer, and the second mesh pattern corresponds to the second spacer. The setting mask includes a first screen area for exposing a first screen pattern and a second screen area for exposing a second screen pattern. The first mark is used for aligning the first screen area with the first pattern, and the second mark is used for aligning the second screen area with the first pattern.

[0052] The present application does not impose any special restrictions on the order in which the first mesh area and the second mesh area are exposed. For example, after the first pattern is exposed, the conveying mechanism can pull the material in the reverse direction, first exposing in sequence to form multiple first mesh areas and then exposing multiple second mesh areas in sequence; for another example, a first mesh area can be exposed first, and then the adjacent or corresponding second mesh area can be exposed, and the above steps can be repeated until all second patterns are exposed.

[0053] As an optional implementation manner, exposing the material strip to obtain a first strip segment having a plurality of first patterns includes: Pulling the material strip along the first length direction so that the material strip is sequentially exposed along the length direction to form a plurality of first patterns; Figure 12 As shown, the plurality of first patterns are A1, A2, A3 to An in the exposure order.

[0054] The step of sequentially exposing a plurality of spaced areas using a set mask includes: The material strip is pulled along the second length direction, and a plurality of first spaced areas are sequentially exposed by setting the first mesh area of ​​the mask to form a plurality of first mesh patterns, wherein the first length direction is opposite to the second length direction; Figure 12 As shown, the first plurality of screen patterns are B1, B2, B3 to Bn in the exposure order.

[0055] The material strip is pulled along the first length direction, and a plurality of second spaced areas are sequentially exposed by setting a second mesh area of ​​the mask to form a plurality of second mesh patterns; Figure 12 As shown, the second mesh patterns are C1, C2, C3 to Cn in the exposure order. The above exposure method can improve the exposure efficiency while maintaining the required exposure accuracy.

[0056] The present application can adopt single-sided exposure or double-sided exposure. Preferably, the material strip 1 has a relative front and back, and both the front and back are coated with a photoresist layer. The front and back of the material strip 1 are double-sided exposed to form a front pattern and a back pattern respectively. The double-sided exposure form can further improve the exposure efficiency.

[0057] As an optional implementation manner, the step of exposing the material strip to obtain a first band segment having a plurality of first patterns includes: A first photomask and a second photomask are used to perform a rough alignment process on the material strip, so that the exposure areas of the first photomask and the second photomask correspond to the material strip. The first photomask and the second photomask are arranged opposite each other and spaced apart, for performing double-sided exposure on the material strip. The space between the first photomask and the second photomask is used for feeding the material strip through. A rough alignment mark is provided on the first photomask, and the rough alignment mark is used to align with the side edge of the material strip. Performing mask alignment processing on the first mask and the second mask so that the first mask and the second mask correspond to each other; Laminating the first photomask and the second photomask so that the strip is clamped and fixed; The front and back sides of the material tape are exposed simultaneously by the first mask and the second mask so that the front and back sides of the material tape are exposed to form a first pattern, wherein the first pattern includes a front first pattern located on the front side and a back first pattern located on the back side, and the front first pattern and the back first pattern correspond to each other.

[0058] The step of performing a rough alignment process on the material strip using the first mask and the second mask includes: Align the rough mark with the side edge of the material strip so that the exposure direction formed by connecting multiple areas to be exposed of the material strip is consistent with the conveying direction of the material strip; In some embodiments, the edge of the web 1 is grasped as a reference for alignment between the first photomask 100 and the web 1 (referred to as coarse alignment). Specifically, the edge of the area of ​​the web 1 to be exposed is grasped, for example, at two points above and below the exposure area, and the photomask is automatically aligned to align the web 1 with the first photomask 100. Only two optical sensor cameras are used when grasping the edge of the web 1. Later, for finer alignment, four optical sensor cameras are used.

[0059] The step of performing mask alignment processing on the first mask and the second mask so that the first mask and the second mask correspond to each other includes: The first photomask is provided with master alignment marks at the four corners, and the second photomask is provided with daughter alignment marks at the four corners. The shapes of the master alignment marks and the daughter alignment marks match, and the master alignment marks and the daughter alignment marks correspond one-to-one. The second photomask is overlapped with the first photomask so that the master alignment marks are aligned with the daughter alignment marks, and the offset value of the daughter alignment marks relative to the master alignment marks is determined; The position of the second mask or the first mask is adjusted so that the offset value meets the set range.

[0060] For example, the first mask on the front (F side) has a "□" master alignment mark, while the second mask on the back (B side) has a "+" daughter alignment mark. The exposure device automatically recognizes these two types of marks through a lens, automatically calculates their center points, and moves the front and back masks to the center of the two alignment marks. The two centers are then aligned, and the center points of the alignment marks on the four corners of the two masks on the front and back of the photoresist strip 1 overlap and align within the specified range, preferably with a target of less than or equal to 0.15μm. If the alignment range is exceeded, the center points of the master alignment marks on the four corners of the front mask can be aligned with the center points of the four daughter alignment marks on the second mask on the back by moving the first mask in the x or y direction and rotating the angle microcontroller.

[0061] Depending on the photoresist or dry film used, preferably, the exposure energy is between 20 mJ / cm2 and 200 mJ / cm2, and the illumination uniformity in the exposure area is within 5%.

[0062] This invention primarily addresses how to ensure high-precision alignment during multiple pattern exposures. This involves equipment improvements, as well as detailed and precise alignment mark design, alignment processes, and detailed adjustments to secondary pattern data to achieve low-cost, high-quality product manufacturing.

[0063] The manufacturing method of the present application further includes: performing a post-development etching process on the band segments having the plurality of first patterns and second patterns to obtain a mask.

[0064] like Figure 14 As shown, a specific manufacturing method of the present invention specifically includes: S1001, the production of high flatness Invar metal coils can be done by thinning; S1002, metal coil cleaning, clean the surface of high-flatness metal coil; S1003, metal coil surface treatment, remove pollutants and oxide layer on the metal foil surface and optimize the foil coil thickness; S1004, attaching a photoresist film, attaching the photoresist film to the cleaned metal coil. If adhesion needs to be enhanced, vacuum bonding, high-temperature baking, or the use of an interface adhesive can be used; S1005, sequentially exposing the surface of the material strip 1 to form a plurality of first patterns; S1006, sequentially exposing the plurality of spacer areas to form a plurality of first mesh patterns; S1007. Exposing the plurality of spacer areas in sequence to form a plurality of second mesh patterns. Depending on the resolution and accuracy requirements of the manufactured pattern, the three exposures of the three patterns may be performed using the same exposure device or a combination of different exposure devices. The exposure device is preferably a sixth-generation and a half (G6H) exposure machine (365nm / i-line or 436nm / g-line) of a photo-mask. Since multiple exposures are used to divide the complete pattern of the large-size FMM product into three parts, in order to reduce the mutual offset and misalignment that may occur during the exposure patterning of different pattern areas, an alignment mark group is used in the FMM product design, and its pattern can be diverse.

[0065] S1008: Developing the strip. Specifically, the exposed photoresist film and metal foil coil are immersed in a developer solution for development, precisely creating the desired pattern on the photoresist. Because photoresist is a light-sensitive material, the structural and chemical properties of areas exposed to light differ from those not exposed, allowing for development. After all patterns on the foil coil have been exposed three times, the coil moves to the development section. The exposed photoresist film passes through a developer tank, dissolving the photoresist in areas that have not solidified due to exposure (in the case of negative-tone photoresist), leaving the desired fine pattern on the remaining photoresist film.

[0066] S1009, precision etching, which can be single-sided etching or double-sided etching; in some embodiments, after forming the desired precision pattern on the photoresist on the foil, the precision pattern on the photoresist formed by the photolithography process is transferred to the metal foil using a wet etching pattern forming process to form a precision metal mask with the desired precision microporous structure. Etching can be double-sided etching at the same time, or single-sided etching in two-sided etching. The developed photoresist film and metal foil coil are passed through the etching tank, and the portion of the metal foil not covered by the photoresist film contacts the etching solution and is etched. After etching on both sides is completed, the precise micro pattern on the photoresist is etched on the metal foil to form a corresponding fine through-hole pattern; S1010, film stripping, specifically, removing the photoresist film. After etching on both sides, the photoresist film on the etched foil roll is removed in a film stripper, leaving the metal foil roll with the etched pattern, thereby forming a metal foil roll with FMM patterning. The micropore size range of the wet etching process is between 10µm and 200µm.

[0067] S1011, cutting and testing, specifically, cutting the metal foil coil with the patterned FMM finished product after de-filming into FMM strips according to the set FMM product size, and performing quality inspection and analysis on the manufactured precision metal mask strips according to product specifications.

[0068] S1012: Product packaging and shipment. Specifically, the FMM finished products that have passed the inspection are packaged and shipped to customers.

[0069] As a second aspect of the present invention, an exposure system is disclosed, such as Figure 3 As shown, the exposure system includes a conveying mechanism, at least one setting mask, a positioning control mechanism, and at least one light source. The conveyor mechanism is used to transport the material strip and move it back and forth along the length of the material strip relative to the light source to expose each area of ​​the material strip in sequence. The mask is set to be located on the light-emitting side of the light source, and the mask is set to be provided with adjacent alignment mark area and auxiliary pattern area. The alignment mark area includes an alignment mark for alignment, and the auxiliary pattern area is used to expose the material strip to form a stretching area. The alignment control mechanism is used to obtain the offset distance information between the alignment mark on the set mask and the first mark sub-pattern formed on the material tape, and control the set mask and the conveying mechanism according to the offset distance information, and adjust the position of the set mask relative to the material tape so that the offset distance meets the set standard.

[0070] As an optional embodiment, the exposure system includes two set masks and two light sources. The two set masks are arranged opposite each other and spaced apart. The two light sources are located outside the two set masks, and the gap between the two set masks allows the feed belt to pass through. In some embodiments, the light source can be a high-pressure UV lamp with a primary wavelength of 365nm (I line), 405nm (h line), or 436nm (g line). The exposure area is preferably 1300 x 600mm; the initial illumination of the light source is at least 12mW / cm², and the illumination uniformity is within ±8%.

[0071] As a specific embodiment, the conveying mechanism includes a discharge mechanism 3a, a receiving mechanism 3b and a position control unit. The discharge mechanism and the receiving mechanism are arranged at intervals, and the light mask and the light source are set to be located between the discharge mechanism and the receiving mechanism, so that the material strip is unwound by the discharge mechanism and rewound by the receiving mechanism and is transmitted in the interval between the set light masks. The position control unit includes at least two detection parts and a controller. The detection parts are located at the unwinding mechanism and the receiving mechanism to detect the transmission position of the material strip. The controller is used to control the unwinding mechanism and the receiving mechanism through the detector to realize the winding and unwinding of the material strip. The exposure system adjusts the moving position of the material strip through the position control unit.

[0072] In some embodiments, the unwinding mechanism and the rewinding mechanism are conventional unwinding and rewinding mechanisms, specifically including a roll mounting shaft and a rotating mechanism. The rotating mechanism can be driven to rotate by a driving mechanism so that the roll mounting shaft can wind, rewind or unwind the roll. The tension adjustment mechanism is used to apply different or the same pressure to both sides of the roll on the roll mounting shaft so that the tension of the roll can be adjusted. The roll unwinding position adjustment module is used to adjust the position of the roll so that it can be aligned parallel to the mask of the exposure equipment.

[0073] In some embodiments, a roller conveyor device is used to feed the material strip between the unloading mechanism and the receiving mechanism and the exposure device. Preferably, the single feeding amount is between 10 mm and 1500 mm.

[0074] In a specific embodiment, the exposure system further includes a tensioning mechanism for providing exposure tension to the web. The tensioning mechanism includes a first pinch roller set 30 and a second pinch roller set 31, respectively located at the top and bottom of the set mask. The first and second pinch roller sets clamp and convey the web to establish the set exposure tension. The set exposure tension is preferably between 10N and 150N.

[0075] Preferably, the tension of the pinch roller ranges from 20N to 80N. In addition, the material strip 1 can also adjust the inclination angle along the transmission direction through a tensioning mechanism. As an optional embodiment, the positioning control mechanism includes at least 2 first detection lenses, at least 4 second detection lenses and a fixed position adjustment device. The setting mask is fixedly set on the fixed position adjustment device. The fixed position adjustment device can move along the length and width directions of the material belt and can rotate relative to the material belt to adjust the position of the setting mask. The first detection lens and the second detection lens can both move along the length, width and thickness directions of the material belt. The first detection lens is used to roughly align the setting mask with the material belt, and the second detection lens is used to precisely align the setting mask with the material belt. The resolution of the first detection lens is smaller than the resolution of the second detection lens.

[0076] In some embodiments, the first inspection lens includes at least two optical inspection microscopes. During rough alignment, the inspection window (10mm x 10mm area) on the reticle can be used to align the edge of the strip with the alignment marks (1mm x 1mm) in two inspection windows on the side of the reticle to ensure that the strip and the reticle are parallel. The position of the strip can be adjusted using electronic position controllers connected to the reel-and-wind devices at both ends of the exposure unit.

[0077] In some embodiments, the fixed position adjustment device can move in the X, Y directions and θ rotation, and the movement range of each axis is between 4mm and 6mm. It is driven by a stepper motor with a resolution of 0.05μm. The second detection lens includes at least 4 optical sensing cameras, and the detection field of view of each camera is within 2mm*2mm, such as a CMOS optical sensor or a CCD optical sensing camera, which automatically identifies and captures the plate alignment marks of the front and back masks, automatically calculates the center point coordinates of the marks, and moves and adjusts the alignment between the front and back masks through the fixed position adjustment device.

[0078] The present application does not impose any special restrictions on the type of exposure device. For example, it can be a roll-to-roll contact exposure machine, or a roll-to-roll proximity exposure machine. Preferably, a roll-to-roll contact exposure machine is used. This device is used to precisely align a material strip with a photoresist film on both sides with a photomask, and then transfer the pattern on the photomask to the photoresist layer on both sides (or one side) by a vacuum contact exposure reaction. This device can continuously expose and produce the entire roll of material strip in the following order: material strip unwinding, material strip feeding, precise mask alignment, exposure, and material strip winding. The alignment accuracy of the front and back sides of the photomask can be within 1μm, preferably within 0.5μm, and the conveying position accuracy of the material strip is within 200μm.

[0079] The features and performance of the present invention are further described in detail below with reference to the embodiments.

[0080] Example Example 1 A method for manufacturing an FMM, High-flatness Invar metal foil coils are made from high-flatness, low-thermal-expansion iron-nickel alloy foil. The highest protrusion within the foil is less than 0.6mm, and the side waves on both sides are less than 0.8mm.

[0081] Surface cleaning: Use a cleaning agent to clean the high-flatness metal foil coil; remove surface dust, pollutants, residual grease, etc.

[0082] Surface treatment: The cleaned metal coil is passed through a chemical acid solution to remove the oxide layer on the surface of the metal foil, reduce surface defects such as calendering marks, scratches, pits, etc., and optimize the thickness of the foil coil.

[0083] Attaching the photoresist film: Attach the photoresist film to both sides of the surface-treated metal coil. To enhance adhesion, vacuum lamination, high-temperature baking, or the use of an interface adhesive can be used.

[0084] Exposure: A conveying mechanism is used to unwind and reel the coil to obtain a material strip, and a transmission mechanism is used to pull the material strip along the length direction and transmit it along the first length direction, so that the material strip is exposed in sequence along the length direction through contact exposure of the first mask to form multiple first patterns. The multiple first patterns are A1, A2, A3 to An in the exposure order, and the first pattern includes multiple pixel holes and a first mark sub-pattern.

[0085] The conveying mechanism is used to pull the material strip in the reverse direction, and a setting mask is used to calibrate the position of the first pattern on the material strip. The setting mask includes an alignment mark area corresponding to the first exposure area and an auxiliary pattern area corresponding to the spacer area. The alignment mark area includes an alignment mark corresponding to the first mark sub-pattern, and the shape of the alignment mark matches the first mark sub-pattern. The alignment mark is overlapped with the first mark sub-pattern to determine the offset of the alignment mark relative to the first mark sub-pattern, and the position of the spacer area is corrected by the offset. When the offset meets the set standard, the spacer area is exposed using the set mask to obtain the first screen pattern; The conveyor mechanism continues to pull the material, so that the multiple spaced areas of the material strip move to the exposure area, and the above calibration and exposure steps are repeated until the material strip is sequentially exposed to form multiple first screen patterns. The multiple first screen patterns are B1, B2, B3 to Bn in the exposure order; The conveying mechanism pulls the material in the reverse direction, so that the multiple interval areas of the material strip move to the exposure area, and repeats the above calibration and exposure steps, so that the material strip is exposed in sequence to form multiple second network patterns. The multiple second network patterns are C1, C2, C3 to Cn in the exposure order, as shown in FIG. Figure 12 shown.

[0086] Development: The exposed photoresist film and metal foil coil are immersed in a developer for development. The exposed metal foil passes through a developer tank, dissolving the photoresist in areas not cured by exposure (negative photoresist is used in this case), leaving the desired fine pattern on the remaining photoresist film. The desired pattern is precisely formed on the photoresist. Depending on the FMM product etching process requirements, development can be performed on both sides simultaneously or on a single side.

[0087] Wet Etching: After forming the desired precise pattern on the photoresist on the foil, a wet etching process is used to transfer the precise pattern created by photolithography onto the metal foil, creating a precision metal mask with the desired micropore structure. Etching can be performed on both sides simultaneously, or on one side in two separate passes. A roll of metal foil coated with developed photoresist is passed through an etching tank. The exposed areas of the foil (i.e., the areas uncovered by the developed photoresist) come into contact with the etching solution, which then etches the desired micropores into the exposed metal foil according to the pattern on the photoresist. After etching on both sides, the precise micro-pattern on the photoresist is etched onto the metal foil, forming a finished FMM strip corresponding to the original FMM pattern design, with numerous fine through-hole patterns.

[0088] Film Stripping: Removes the photoresist film from the surface of the metal coil after etching. After etching on both sides, the photoresist film is removed in a film stripper using a chemical solution to dissolve the photoresist film on the etched foil coil, leaving the metal foil coil with the etched pattern, forming a metal foil coil with FMM patterning. The micropore size of this FMM product is 48±2µm.

[0089] Cutting / Inspection Analysis: The stripped metal foil coil with the patterned FMM product is cut into precision metal mask (FMM) strips according to the specified FMM product dimensions. The finished precision metal mask strips are then quality-inspected and analyzed according to product specifications. The measured characteristics of the precision metal mask are listed in the Example 1 column of Table 2. The actual patterns of the alignment mark and the first mark sub-pattern on the strip are as follows: Figure 15 shown.

[0090] Comparative Example Comparative Example 1 The same manufacturing method as in Example 1 is used, except that a G8.6 generation exposure machine and a corresponding mask are used for sequential exposure to form a set of FMM product patterns (the first pattern and the second pattern are formed by one exposure).

[0091] Table 2 Dimensional characteristics of large-size precision metal masks for eighth-generation lines made by different manufacturing processes

[0092] Table 3 shows the cost advantages and disadvantages of the present invention and large-size exposure equipment combined with a large-size mask to manufacture precision metal masks for eighth-generation lines with a single exposure.

[0093]

[0094] According to the results in Tables 2 and 3, the manufacturing method of the present application is used to manufacture a precision metal mask (FMM), with a large-size material strip as the exposure substrate, and a low-generation small-size exposure machine and exposure. Through a unique splicing exposure method, the existing low-generation exposure machine can be used to complete the exposure of a higher-generation large-size FMM. Through the special alignment method and the design of the alignment mark, high alignment accuracy and exposure consistency can still be achieved during batch exposure of large-size material strips, thereby having the same size and evaporation effect as the FMM formed by high-generation exposure, and the present invention has a lower cost.

[0095] The above are only specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the contents described in the drawings and the above specific embodiments. Any modifications that do not deviate from the functional and structural principles of the present invention are intended to be included within the scope of the claims.

Claims

1. A method for manufacturing a mask, characterized in that: include: exposing the material strip to obtain a first strip segment having a plurality of first patterns, wherein the material strip comprises a strip-shaped foil and a photoresist layer formed on a surface of the strip-shaped foil, a spacer exists between two adjacent first patterns, and the first patterns comprise a first mark sub-pattern and a plurality of pixel holes; Sequentially exposing the plurality of spacer regions using a set photomask to obtain second band segments having a plurality of second patterns, wherein the set photomask includes an alignment mark region corresponding to the first mark sub-pattern, and an auxiliary pattern region corresponding to the spacer region adjacent to the first mark sub-pattern, the alignment mark region including an alignment mark having a shape matching that of the first mark sub-pattern. Exposing the spacer regions using the set photomask includes: Overlapping the alignment mark area with the first mark sub-pattern so that the alignment mark is aligned with the corresponding first mark sub-pattern; Determining an offset distance of the alignment mark relative to the first mark sub-pattern; When the offset distance meets the set standard, the corresponding interval is exposed using the set mask to obtain the corresponding second pattern.

2. The method according to claim 1, characterized in that The step of determining the offset distance of the alignment mark relative to the first mark sub-pattern includes: Determining a lateral offset distance and a longitudinal offset distance of the alignment mark relative to the first mark sub-pattern along the length and width directions of the material strip; When the lateral offset distance or the longitudinal offset distance exceeds the set distance, the offset distance of the alignment mark relative to the first mark sub-pattern is reduced to below the set distance by moving the lateral or longitudinal position of the material tape or the set mask.

3. The method according to claim 1, characterized in that The first graphic has a first wide side and a second wide side relative to each other, the first mark sub-graphic includes multiple first marks and multiple second marks, the first mark is located on the first wide side, the second mark is located on the second wide side, the second mark corresponds to the first mark, and the first mark and the second mark are respectively used to align with the spacing areas on both sides of the first graphic.

4. The method according to claim 3, characterized in that A plurality of the first marks are arranged at intervals along the length direction of the material strip, In the step of determining the offset distance of the alignment mark relative to the first mark sub-graph, it also includes: determining the angle between the line connecting adjacent first marks and the line connecting corresponding adjacent alignment marks as the deflection angle. When the deflection angle exceeds the set angle, the deflection angle is reduced by reducing the deflection angle of the material strip along the transmission direction, or by reducing the deflection angle of the set mask along the transmission direction.

5. The method according to claim 4, characterized in that The first mark sub-graph includes at least 4 first marks, at least 2 of the first marks are spaced apart on one long side close to the material tape, and at least 2 of the first marks are spaced apart on the other long side close to the material tape, for determining the deflection angle of the set mask relative to the two long sides of the material tape.

6. The method according to claim 4, characterized in that The first pattern further includes at least one center hole and at least two alignment holes, wherein the center hole is located at the center of the pixel hole, and at least one alignment hole is located in the middle of any wide side of the first pattern relative to the width direction of the material strip, so that the line connecting the center hole and the alignment hole has a first direction, and the first direction is consistent with the length direction of the material strip. The second graphic includes a fixing hole, which is located in the middle of the second graphic relative to the width direction of the material strip. The angle between the line connecting the center hole and the fixing hole and the first direction forms an offset angle. The offset angle is used to display the rotation angle of the second graphic formed by exposure relative to the corresponding first graphic. The offset angle does not exceed the set angle.

7. The method according to claim 3, characterized in that The spacer includes a first spacer and a second spacer, the first spacer is adjacent to the first wide side, the second spacer is adjacent to the second wide side, the second pattern includes a first mesh pattern and a second mesh pattern, the first mesh pattern corresponds to the first spacer, and the second mesh pattern corresponds to the second spacer. The setting mask includes a first screen area for exposing a first screen pattern and a second screen area for exposing a second screen pattern. The first mark is used for aligning the first screen area with the first pattern, and the second mark is used for aligning the second screen area with the first pattern.

8. The method according to claim 7, characterized in that The step of exposing the material strip to obtain a first strip segment having a plurality of first patterns includes: Pulling the material strip along a first length direction so that the material strip is sequentially exposed along the length direction to form a plurality of first patterns; The step of sequentially exposing the plurality of spaced areas using a set mask includes: Pulling the material strip along a second length direction, sequentially exposing a plurality of the first spaced areas by setting a first mesh area of ​​the mask to form a plurality of first mesh patterns, wherein the first length direction is opposite to the second length direction; The material strip is pulled along the first length direction, and a plurality of second spaced areas are exposed in sequence by setting a second mesh area of ​​the mask to form a plurality of second mesh patterns.

9. The method according to any one of claims 1 to 8, characterized in that The step of exposing the material strip to obtain a first strip segment having a plurality of first patterns includes: A first photomask and a second photomask are used to perform a rough alignment process on the material strip, so that the exposure areas of the first photomask and the second photomask correspond to the material strip. The first photomask and the second photomask are arranged opposite each other and spaced apart for double-sided exposure of the material strip. The space between the first photomask and the second photomask is used for feeding the material strip through. A rough alignment mark is provided on the first photomask, and the rough alignment mark is used for alignment with the side edge of the material strip. Performing mask alignment processing on the first mask and the second mask so that the first mask and the second mask correspond to each other; Laminating the first photomask and the second photomask so that the material strip is clamped and fixed; The front and back sides of the material tape are simultaneously exposed by the first photomask and the second photomask so that the front and back sides of the material tape are exposed to form the first pattern, wherein the first pattern includes a front first pattern located on the front side and a back first pattern located on the back side, and the front first pattern and the back first pattern correspond to each other.

10. The method according to claim 9, characterized in that The step of performing a rough alignment process on the material strip using a first mask and a second mask includes: Aligning the rough alignment mark with the side edge of the material strip so that an exposure direction formed by connecting multiple to-be-exposed areas of the material strip is consistent with a conveying direction of the material strip; The step of performing mask alignment processing on the first mask and the second mask so that the first mask and the second mask correspond to each other includes: The first photomask is provided with master alignment marks at four corners, and the second photomask is provided with daughter alignment marks at four corners. The master alignment marks match the shapes of the daughter alignment marks, and the master alignment marks correspond to the daughter alignment marks one-to-one. The second photomask is overlapped with the first photomask so that the master alignment marks are aligned with the daughter alignment marks, and the offset value of the daughter alignment marks relative to the master alignment marks is determined. The position of the second mask or the first mask is adjusted so that the offset value is within a set range.

11. An exposure system, characterized in that: The exposure system includes a conveying mechanism, at least one setting mask, a positioning control mechanism, and at least one light source. The conveying mechanism is used to drive the material strip to move back and forth along the length direction of the material strip relative to the light source, so as to expose each area of ​​the material strip in sequence. The setting mask is located on the light-emitting side of the light source, and is formed with adjacent alignment mark areas and auxiliary graphic areas. The alignment mark area includes an alignment mark, and the auxiliary graphic area is used to expose the material strip to form a stretching area. The alignment control mechanism is used to obtain the offset distance information between the alignment mark on the set mask and the first mark sub-pattern formed on the material tape, and control the set mask and the conveying mechanism according to the offset distance information, and adjust the position of the set mask relative to the material tape so that the offset distance meets the set standard.

12. The exposure system according to claim 11, wherein: The exposure system includes two setting masks and two light sources. The two setting masks are arranged opposite to each other and spaced apart. The two light sources are respectively located outside the two setting masks. The space between the two setting masks is used for the feed belt to pass through.

13. The exposure system according to claim 12, wherein: The conveying mechanism includes a feeding mechanism, a receiving mechanism and a position control unit. The feeding mechanism and the receiving mechanism are arranged at intervals. The set light mask and the light source are located between the feeding mechanism and the receiving mechanism, so that the material strip is unwound by the feeding mechanism and rewound by the receiving mechanism and is transported in the interval between the set light masks. The position control unit includes a controller and at least two detection components. The detection components are located at the unwinding mechanism and the receiving mechanism and are used to detect the transmission position of the material strip. The controller is used to control the unwinding mechanism and the receiving mechanism through the detector to realize the winding and unwinding of the material strip. The exposure system adjusts the moving position of the material strip through the position control unit.

14. The exposure system according to any one of claims 11 to 13, characterized in that The exposure system also includes a tensioning mechanism, which is used to provide exposure tension to the material strip. The tensioning mechanism includes a first pinching roller group and a second pinching roller group located at the top and bottom of the set mask, respectively. The first pinching roller group and the second pinching roller group clamp and transport the material strip to form the set exposure tension.

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