Manufacturing method of small-size high-power alloy resistor

Abstract

The invention relates to the technical field of power electronics, and particularly discloses a manufacturing method of a small-size high-power alloy resistor, which comprises the following steps: S1, raw material pretreatment: firstly smelting an alloy raw material at a high temperature, casting into an ingot, and then carrying out hot rolling and acid pickling treatment to obtain an alloy blank; s2, alloy square wire forming, wherein the alloy blank is formed into a square wire with the width of 0.08 inch through a stripping process; s3, copper electrode forming, wherein copper electrodes are accurately formed on the two sides of the square wire through a CGDS; s4, stamping and slitting: slitting the square wire along the width direction by adopting a stamping device to obtain a single resistor; according to the method, manganese segregation is eliminated through high-temperature smelting, dislocation density is controlled through 3-5 passes of hot rolling, a compact copper layer is deposited under the jet flow pressure in cooperation with CGDS, and recrystallization is triggered through heat treatment to eliminate internal stress, so that the alloy resistor obtains high reliability of low resistance value deviation rate, and the defects of resistance value dispersion and interface failure in related processes are overcome.

Description

Technical Field

[0001] The present application relates to the field of power electronics technology, and more specifically, to a method for manufacturing a small-volume, high-power alloy resistor. Background Art

[0002] Power electronics technology refers to the conversion, control and transmission of electrical energy through power electronic devices. It can realize functions such as conversion between AC and DC, voltage or current amplitude regulation, and frequency conversion. It is widely used in new energy power generation, power systems, electric vehicles, industrial control, rail transportation and other fields. The ultimate goal is to improve power conversion efficiency, enhance system stability and reduce energy consumption. Among them, alloy resistors undertake the functions of current detection, energy dissipation and circuit protection.

[0003] The relevant alloy resistors achieve electrical energy-to-thermal energy conversion through the directional scattering of free electrons by the metal lattice. However, the manganese element forms a segregation band due to insufficient melting temperature, and the alloy is easily induced to expand microcracks when it is melted, resulting in uneven distribution of lattice distortion, reduced electrode-substrate interface bonding strength, and thus increased resistance deviation. Summary of the Invention

[0004] In order to solve the problem of increased resistance deviation of alloy resistors caused by the related alloy resistors achieving electrical energy-thermal energy conversion through the directional scattering of free electrons by the metal lattice, the present application provides a method for manufacturing a small-volume high-power alloy resistor.

[0005] In a first aspect, the present application provides a small-volume, high-power alloy resistor, which adopts the following technical solution:

[0006] A small-volume, high-power alloy resistor is composed of the following raw materials in the following mass percentages: 83.5% to 84.5% copper, 11.5% to 13.0% manganese, 2.5% to 3.0% nickel, and 0.05% to 0.2% chromium.

[0007] By adopting the above technical solution, copper is used as the main conductive matrix, which ensures the formation of a uniform alloy phase in the smelting step, reduces the resistivity and optimizes the plasticity of the subsequent hot rolling process; the addition of manganese increases the resistivity of the alloy and enhances the hardness, ensuring the processing stability of the square wire in the subsequent stamping and slitting; nickel improves the heat resistance and mechanical strength of the alloy, and inhibits grain boundary migration during the copper electrode heat treatment stage; chromium is used to improve the alloy's oxidation resistance, prevent the alloy from degrading in a high temperature environment, and ensure the long-term reliability of the resistor.

[0008] Preferably, the alloy resistor further contains 0.2% to 0.4% by mass of silicon and 0.03% to 0.07% by mass of titanium.

[0009] By adopting the above technical solution, since silicon is used as a component of the alloy resistor, silicon forms a solid solution with copper during the smelting process, thereby improving the fluidity and hot working plasticity of the alloy, making the internal stress distribution of the billet more uniform during the hot rolling process, and reducing the occurrence of cracks; at the same time, titanium is used as a component of the alloy resistor, and titanium combines with impurities such as oxygen and sulfur in the melt to form a stable compound, purifying the grain boundaries and refining the grains, thereby inhibiting the abnormal growth of grains during the subsequent heat treatment of the copper electrode, thereby achieving the effects of improving the resistivity stability and enhancing the interface bonding strength of the copper electrode.

[0010] Preferably, the alloy resistor further contains 0.01% to 0.05% by mass of magnesium.

[0011] By adopting the above technical solution, since magnesium is used as a component of the alloy resistor, magnesium is concentrated in the grain boundary area during the smelting stage, forming a dense magnesium oxide film with oxygen, which hinders the diffusion of oxygen into the interior of the alloy during the subsequent copper electrode heat treatment; at the same time, magnesium atoms pin dislocations at the grain boundaries, inhibiting the initiation of microcracks caused by grain boundary sliding during the hot rolling process, thereby achieving the effect of improving the electrode-alloy interface bonding strength and the integrity of the slitting edge.

[0012] In a second aspect, the present application provides a method for manufacturing a small-volume, high-power alloy resistor, using the following technical solution:

[0013] A method for manufacturing a small-volume, high-power alloy resistor comprises the following steps:

[0014] S1. Raw material pretreatment: First, the alloy raw materials are melted at high temperature, cast into ingots, and then hot rolled and pickled to obtain alloy billets;

[0015] S2, alloy square wire forming: the alloy billet is formed into square wire with a width of 0.08 inches through a drawing process;

[0016] S3, Copper Electrode Forming: Use CGDS to accurately form copper electrodes on both sides of the square wire, specifically including:

[0017] S301: Positioning the square wire on the processing tooling, wherein the spacing ΔL of the copper electrodes is calculated based on the target resistance R, resistivity ρ, width W and thickness T according to the formula R=ρ·ΔL / (W·T);

[0018] S302: Use copper powder with a particle size of 10-50 μm and spray it at a high pressure of 0.5-1.0 MPa on the area ΔL on both sides of the square wire to form a copper layer with a thickness of 0.10-0.20 mm;

[0019] S303: heat-treating the copper layer under nitrogen protection for 10 to 15 minutes;

[0020] S4. Punching and slitting: Use a punching device to cut the square wire along the width direction at a punching speed of 2 to 5 m / s to obtain single resistors.

[0021] By adopting the above technical solution, since high-temperature melting is adopted to ensure sufficient diffusion of the copper-manganese eutectic structure, a segregation-free ingot is obtained after casting; the hot rolling process is divided into 3 to 5 rolling passes in the range of 600-700°C, and the reduction rate of each pass is controlled at 15%-20%. This parameter combination reduces the dislocation density of the alloy billet; at the same time, the pickling is treated with a 10vol% nitric acid solution for 120 seconds to remove the hot-rolled oxide scale and provide a clean surface for the subsequent drawing process; the drawing process targets a width of 0.08 inches. According to the resistance power density formula P=I²R / V, this size increases the power carrying capacity per unit volume, where P is the resistance power density, and the unit is W / m³ represents the power intensity consumed per unit volume of the resistor; I represents the working current passing through the resistor, in A; R represents the resistance value, in Ω; and V represents the effective volume of the resistor, in m³. The CGDS process uses copper powder to spray under jet pressure, so that the copper layer is densely distributed on both sides of the alloy resistor. Heat treatment is carried out in a nitrogen environment to eliminate the internal stress generated by spraying through recrystallization of the copper layer. The stamping and slitting is carried out at a speed of 2 to 5 m / s with a gap of 0.01 to 0.02 mm. This parameter combination makes the notch collapse angle less than 5 μm to maintain the integrity of the alloy resistor. Therefore, the alloy resistor achieves the effect of small resistor size and high electrode bonding strength.

[0022] Preferably, in S1, the high temperature smelting temperature is 1520-1600°C, and the alloying is performed by holding the temperature for 30 minutes after smelting.

[0023] By adopting the above technical solution, due to the use of a high temperature melting temperature range of 1520~1600℃, this temperature range ensures the liquefaction of the copper matrix and the full diffusion of manganese to form a uniform solid solution, thereby eliminating the risk of component segregation in the subsequent hot rolling process; after melting, the heat is kept for 30 minutes. During this process, the chromium element migrates to the grain boundary dislocation area to form Cr 23 C6 carbide particles pin the grain boundaries, thereby enhancing the alloy billet's resistance to intergranular corrosion during the pickling process. As a result, the alloy obtains a uniform structure with high grain size after pickling, supporting the dimensional stability of the subsequent drawing process.

[0024] Preferably, in S2, the thickness of the square wire is calculated based on the formula R=ρ·L / (W·T), wherein R refers to the resistance value of the alloy resistor, ρ is the resistivity of the alloy itself, L is the equivalent length of the alloy resistor between the two measuring points; W is the length of the equivalent cross-section of the alloy resistor between the two measuring points, and T represents the thickness of the equivalent cross-section of the alloy resistor between the two measuring points.

[0025] By adopting the above technical solution, the formula R=ρ·L / (W·T) is used to determine the square wire thickness. This calculation ensures that the copper electrode spacing ΔL matches the target resistance value in the S301 process, while also achieving stress matching between the square wire cross-sectional area and the CGDS copper layer and controlling the thickness tolerance, thereby reducing the resistance value dispersion rate in the stamping and slitting process; thereby achieving the effect of improving the resistance value accuracy of the resistor.

[0026] Preferably, in S2, the temperature of the strip drawing process is 600-700°C, and the strip is gradually thinned to the target thickness in 3-5 steps.

[0027] By adopting the above technical solution, due to the use of the 600~700℃ drawing temperature range, this temperature range puts the alloy above the dynamic recrystallization critical point to maintain plastic deformation and thus eliminate the residual stress of the hot-rolled billet; at the same time, thinning is performed in 3 to 5 passes, and the reduction rate of each pass is controlled at 15% to 20% to promote the refinement of the alloy's grain size.

[0028] Preferably, in S303 , the heat treatment temperature is 420±5° C., and the nitrogen flow rate is 5 to 10 L / min.

[0029] By adopting the above technical solution, a heat treatment temperature of 420±5℃ is used, which triggers the recrystallization nucleation of the cold-sprayed copper layer, stabilizing the copper grain size at 5~8μm while avoiding excessive grain boundary migration caused by exceeding 450℃; a nitrogen flow rate of 5~10L / min maintains a low-oxygen environment to form a continuous Cr2O3-Al2O3 passivation film on the copper surface, thereby obtaining a copper electrode with high conductivity and low interface porosity.

[0030] Preferably, in S4, the cutting interval is controlled to be 0.03-0.06 inches, and the surface of the single resistor is cleaned after punching.

[0031] By adopting the above technical solution, due to the use of a cutting interval of 0.03 to 0.06 inches, this size range corresponds to the effective length L of the resistor in the formula R = ρ·L / (W·T), so that the target resistance value covers the standard range of 5 to 100mΩ. After punching, the surface is cleaned by bombarding with argon plasma at a power of 200W for 30 seconds to remove burrs and organic matter adsorption on the cutting edges, ensuring long-term reliability under high-power conditions.

[0032] Preferably, after S4 , a resistance test is performed on the single resistor, and the test current is 1 to 10 mA.

[0033] By adopting the above technical solution, a test current range of 1 to 10 mA is used. This current value ensures a low self-heating temperature rise of the resistor, thereby eliminating the interference of temperature drift on resistance measurement. During the test, the current probe spacing is equal to the copper electrode spacing ΔL, and the voltage probe is placed at the center of the copper electrode. If the current is lower than 1 mA, the signal-to-noise ratio is insufficient, and if it is higher than 10 mA, there is a risk of electromigration of the copper electrode. Therefore, 1 to 10 mA is selected as the test current range to improve test accuracy. As a result, a high resistance screening pass rate is achieved to ensure the long-term stability of the alloy resistor in high-power application scenarios.

[0034] In summary, this application has the following beneficial effects:

[0035] 1. The method of the present application eliminates manganese segregation through high-temperature smelting, controls dislocation density through 3 to 5 hot rolling passes, deposits a dense copper layer under jet pressure in conjunction with CGDS, and triggers recrystallization through heat treatment to eliminate internal stress. As a result, the alloy resistor achieves high reliability with a low resistance deviation rate, avoiding the defects of resistance discreteness and interface failure in related processes.

[0036] 2. Since this application uses copper as the conductive matrix, manganese is added to improve resistivity, nickel is added to enhance heat resistance, and chromium is used to optimize oxidation resistance, a uniform copper-manganese eutectic structure is formed during the smelting process, the dislocation density is reduced and grain boundary migration is inhibited, and a high-resistivity, high-stability alloy resistor is obtained, which is suitable for high power density application scenarios.

[0037] 3. Silicon and titanium are preferably used in this application because silicon forms a solid solution with copper during smelting to improve fluidity, titanium combines with oxygen and sulfur impurities to refine the grains, and magnesium segregates at the grain boundaries to form a magnesium oxide oxygen barrier layer, which pins dislocations to suppress microcracks during the hot rolling process. The total resistance obtains a high electrode-substrate interface bonding strength and a low resistance drift rate, avoiding peeling of the copper electrode and the alloy substrate interface due to insufficient electrode-substrate interface bonding strength during stamping and slitting, thereby meeting the high precision requirements of stamping and slitting. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a flow chart of the preparation method of a small-volume, high-power alloy resistor proposed in this application. DETAILED DESCRIPTION

[0039] The present application is further described in detail below with reference to the accompanying drawings and examples.

[0040] The relevant alloy resistors achieve electrical energy-to-thermal energy conversion through the directional scattering of free electrons by the metal lattice. However, the manganese element forms a segregation band due to insufficient melting temperature, and the alloy is easily induced to expand microcracks when it is melted, resulting in uneven distribution of lattice distortion, reduced electrode-substrate interface bonding strength, and thus increased resistance deviation.

[0041] The present application provides a method for manufacturing a small-volume, high-power alloy resistor, comprising the following steps: S1, raw material pretreatment: first, the alloy raw material is melted at a high temperature, cast into an ingot, and then hot-rolled and pickled to obtain an alloy billet; S2, alloy square wire forming: the alloy billet is formed into a square wire with a width of 0.08 inches through a drawing process; S3, copper electrode forming: copper electrodes are precisely formed on both sides of the square wire using CGDS; S4, stamping and slitting: a stamping device is used to slit the square wire along the width direction to obtain a single resistor.

[0042] Since this application uses high-temperature smelting to eliminate manganese segregation, and controls dislocation density through 3 to 5 hot rolling passes, and cooperates with CGDS to deposit a dense copper layer under jet pressure, and triggers recrystallization through heat treatment to eliminate internal stress, the alloy resistor obtains high reliability with a low resistance deviation rate, avoiding the defects of resistance discreteness and interface failure in related processes.

[0043] Example 1

[0044] This embodiment provides a small-volume, high-power alloy resistor, which is composed of the following raw materials in the following mass percentages:

[0045] Copper 84.5%, manganese 11.5%, nickel 3.0%, chromium 0.05%, silicon 0.4%, titanium 0.07% and magnesium 0.05%, with the balance being unavoidable impurities.

[0046] The manufacturing method of the above-mentioned small-volume high-power alloy resistor is as follows:

[0047] S1. Raw material pretreatment: First, the alloy raw materials are melted at a high temperature of 1520°C, cast into ingots, and then hot rolled at 600°C in three passes. The ingots are pickled with 10 vol% nitric acid for 120 seconds to obtain alloy billets.

[0048] S2, alloy square wire forming: the alloy billet is formed into square wire with a width of 0.08 inches and a thickness of 0.005 inches in three passes at 600°C;

[0049] S3, Copper Electrode Forming: Use CGDS to accurately form copper electrodes on both sides of the square wire, specifically including:

[0050] S301: Position the square wire on the processing tooling, with the copper electrode spacing ΔL = 0.25 inches;

[0051] S302: Use copper powder with a particle size of 50μm and spray it onto both sides of the square wire at a jet pressure of 0.5MPa to form a 0.10mm thick copper layer;

[0052] S303: heat treating the copper layer at 415°C for 15 minutes under nitrogen flow rate of 5 L / min;

[0053] S4. Punching and slitting: Use a punching device to slit the square wire along the width direction at a punching speed of 2m / s, cutting every 0.06 inches. After obtaining a single resistor, it is cleaned with 200W argon plasma for 30 seconds.

[0054] Example 2

[0055] This embodiment provides a method for manufacturing a small-volume, high-power alloy resistor, comprising the following raw material components in parts by weight:

[0056] Copper 84.0%, manganese 12.25%, nickel 2.6%, chromium 0.1%, silicon 0.3%, titanium 0.05% and magnesium 0.03%, and the balance are unavoidable impurities.

[0057] The preparation method of the above-mentioned small-volume high-power alloy resistor is as follows:

[0058] S1. Raw material pretreatment: First, the alloy raw materials are melted at a high temperature of 1560°C, cast into ingots, and then hot rolled at 650°C in 4 passes. The ingots are pickled with 10 vol% nitric acid for 120 seconds to obtain alloy billets.

[0059] S2, alloy square wire forming: the alloy billet is formed into square wire with a width of 0.08 inches and a thickness of 0.008 inches in 4 passes at 650°C;

[0060] S3, Copper Electrode Forming: Use CGDS to accurately form copper electrodes on both sides of the square wire, specifically including:

[0061] S301: Position the square wire on the processing tooling, with the copper electrode spacing ΔL = 0.15 inches;

[0062] S302: Use copper powder with a particle size of 30μm and spray it onto both sides of the square wire at a jet pressure of 0.75MPa to form a 0.15mm thick copper layer;

[0063] S303: The copper layer is heat treated at 420° C. for 12.5 minutes under nitrogen flow rate of 7.5 L / min;

[0064] S4. Punching and slitting: Use a punching device to slit the square wire along the width direction at a punching speed of 3.5m / s, cutting every 0.045 inches. After obtaining a single resistor, it is cleaned with 200W argon plasma for 30 seconds.

[0065] Example 3

[0066] This embodiment provides a method for manufacturing a small-volume, high-power alloy resistor, comprising the following raw material components in parts by weight:

[0067] Copper 84.5%, manganese 11.5%, nickel 3.0%, chromium 0.05%, silicon 0.4%, titanium 0.07% and magnesium 0.05%, with the balance being unavoidable impurities.

[0068] The preparation method of the above-mentioned small-volume high-power alloy resistor is as follows:

[0069] S1. Raw material pretreatment: First, the alloy raw materials are smelted at a high temperature of 1600°C, cast into ingots, and then hot rolled at 700°C in 5 passes. The ingots are pickled with 10 vol% nitric acid for 120 seconds to obtain alloy billets.

[0070] S2, alloy square wire forming: the alloy billet is formed into square wire with a width of 0.08 inches and a thickness of 0.015 inches in 5 passes at 700°C;

[0071] S3, Copper Electrode Forming: Use CGDS to accurately form copper electrodes on both sides of the square wire, specifically including:

[0072] S301: Position the square wire on the processing tooling, with the copper electrode spacing ΔL = 0.12 inches;

[0073] S302: Using copper powder with a particle size of 10 μm, high-pressure spraying is performed on both sides of the square wire at a jet pressure of 1.0 MPa to form a 0.20 mm thick copper layer;

[0074] S303: heat treating the copper layer at 425°C for 10 minutes under nitrogen flow rate of 10 L / min;

[0075] S4. Punching and slitting: Use a punching device to slit the square wire along the width direction at a punching speed of 5m / s, cutting every 0.03 inches. After obtaining a single resistor, it is cleaned with 200W argon plasma for 30 seconds.

[0076] Comparative Example 1

[0077] Ingredients: Same as Example 1.

[0078] Preparation method: In S1, the melting temperature is 1400° C. and the temperature is kept for 30 minutes; the remaining steps are the same as those in Example 2.

[0079] Comparative Example 2

[0080] Ingredients: Same as Example 1.

[0081] Preparation method: In S1, rolling is performed at 650° C. in two passes with a total reduction rate of 30%; the remaining steps are the same as those in Example 2.

[0082] Comparative Example 3

[0083] Ingredients: Same as Example 2.

[0084] Preparation method: The copper powder in S3 has a particle size of 80 μm; the remaining steps are the same as those in Example 2.

[0085] Comparative Example 4

[0086] Ingredients: Same as Example 2.

[0087] Preparation method: the heat treatment temperature in S303 is 380° C.; the remaining steps are the same as those in Example 2.

[0088] Comparative Example 5

[0089] Ingredients: Same as Example 3.

[0090] Production method: The cutting interval in S4 is 0.10 inches; the remaining steps are consistent with Example 3.

[0091] Comparative Example 6

[0092] Ingredients: Same as Example 2.

[0093] Preparation method: the resistance test current in S5 is 50 mA; the remaining steps are consistent with Example 2.

[0094] Performance testing

[0095] Sample preparation: According to the methods of the examples and comparative examples, 20 resistor samples were prepared for each example, and then all samples were placed in an environment with a temperature of 25±0.5°C and a humidity of 40±5% for 24 hours.

[0096] Resistivity and resistance accuracy test

[0097] Testing process:

[0098] The sample was fixed on an insulating fixture and connected to the circuit according to the Kelvin connection method, where the distance between the current probes was equal to the distance between the copper electrodes, and the voltage probe was placed at the center of the two sets of copper electrodes;

[0099] Then, apply a test current that is consistent with the value recorded in the manufacturing method, and then record the voltage value V. Calculate the resistance value based on R=V / I. Repeat the test 2-3 times, take the average resistance value Ra, and finally calculate the resistivity ρ=Ra·W·T / L based on the sample geometry. Calculate the resistance deviation rate: δ=Ra-Rt / Rt×100%, where Rt is the target resistance.

[0100] High temperature and high humidity aging test

[0101] Testing process:

[0102] Before testing, the initial resistance value R0 of each sample was recorded. The samples were then placed in an aging chamber for 1000 hours. During this process, five samples were removed every 100 hours and the resistance value Rt was remeasured at 25°C. The resistance drift rate was calculated according to the formula: δt = |Rt-R0| / R0×100%. After the test, the sample interface microstructure was observed using SEM.

[0103] Performance comparison table:

[0104] Group Resistivity (μΩ·cm) Resistance deviation rate (%) 1000 hours resistance drift rate (%) Example 1 42.8±0.2 +0.9 +0.25 Example 2 42.5±0.1 +0.1 +0.15 Example 3 42.6±0.3 -0.7 +0.28 Comparative Example 1 45.3±1.1 +15.2 +5.7 Comparative Example 2 43.9±0.8 +8.3 +3.2 Comparative Example 3 42.7±0.3 +1.2 +12.8 Comparative Example 4 42.6±0.2 +0.8 +7.5 Comparative Example 5 42.5±0.2 +79.6 +0.31 Comparative Example 6 42.5±0.1 +0.2 +8.2

[0105] Conclusion of the embodiment:

[0106] Combining Examples 1-3 and Comparative Example 1 and the performance comparison table, it can be seen that when the melting temperature is reduced to 1400°C, insufficient diffusion of manganese leads to component segregation, increased resistivity, increased resistance deviation rate, and increased 1000-hour drift rate, proving that the control of the melting temperature is related to the resistance value of the alloy resistor;

[0107] Combining Examples 1-3 and Comparative Example 2 and the performance comparison table, it can be seen that when the hot rolling pass is reduced to 2, the dislocation density increases, causing uneven grain breakage, increased resistivity, increased resistance deviation rate, and increased drift rate. If the hot rolling pass is too low, it is difficult to control the micro defects of the alloy resistance, thereby affecting the performance.

[0108] Combining Examples 1-3 and Comparative Example 3 and the performance comparison table, it can be seen that increasing the CGDS copper powder particle size to 80 μm leads to a surge in the porosity of the copper layer, deterioration of the interface bonding strength, and an increase in the 1000-hour drift rate, proving that controlling the particle size to ≤50 μm can improve the reliability of the electrode;

[0109] Combining Examples 1-3 and Comparative Example 4 with the performance comparison table, it can be seen that when the heat treatment temperature drops to 380°C, the copper layer is not fully recrystallized, and the residual stress causes the drift rate to increase, which in turn supports the rationality of the heat treatment temperature ≥ 415°C.

[0110] Combining Examples 1-3 and Comparative Example 5 and the performance comparison table, it can be seen that the increase in the cutting interval significantly increases the resistance deviation rate, because the length L exceeds the limit and violates the formula R=ρ·L / (W·T), confirming the necessity of controlling the cutting interval to ≤0.06 inches;

[0111] Combining Examples 1-3 and Comparative Example 6 with the performance comparison table, it can be seen that increasing the resistance test current to 50 mA causes electrode electromigration damage, and the 1000-hour drift rate increases, proving that a test current ≤ 10 mA ensures that the resistance is qualified while also avoiding performance damage to the alloy resistor.

[0112] This specific embodiment is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, those skilled in the art may make non-creative modifications to the present embodiment as needed, but as long as they are within the scope of the claims of the present application, they are protected by the patent law.

Claims

1. A small-volume, high-power alloy resistor, characterized in that: The invention is composed of the following raw materials in the following mass percentages: 83.5% to 84.5% copper, 11.5% to 13.0% manganese, 2.5% to 3.0% nickel and 0.05% to 0.2% chromium.

2. A small-volume, high-power alloy resistor according to claim 1, characterized in that: The alloy resistor further contains 0.2% to 0.4% by mass of silicon and 0.03% to 0.07% by mass of titanium.

3. The small-volume, high-power alloy resistor according to claim 1, characterized in that: The alloy resistor further contains 0.01% to 0.05% by mass of magnesium.

4. A method for manufacturing a small-volume high-power alloy resistor, characterized in that: A small-volume, high-power alloy resistor according to any one of claims 1 to 3, comprising the following steps: S1. Raw material pretreatment: First, the alloy raw materials are melted at high temperature, cast into ingots, and then hot rolled and pickled to obtain alloy billets; S2, alloy square wire forming: the alloy billet is formed into square wire with a width of 0.08 inches through a drawing process; S3, Copper Electrode Forming: Use CGDS to accurately form copper electrodes on both sides of the square wire, specifically including: S301: Positioning the square wire on the processing tooling, wherein the spacing ΔL of the copper electrodes is calculated based on the target resistance R, resistivity ρ, width W and thickness T according to the formula R=ρ·ΔL / (W·T); S302: Use copper powder with a particle size of 10-50 μm and spray it at a high pressure of 0.5-1.0 MPa on the area ΔL on both sides of the square wire to form a copper layer with a thickness of 0.10-0.20 mm; S303: heat-treating the copper layer under nitrogen protection for 10 to 15 minutes; S4. Punching and slitting: Use a punching device to cut the square wire along the width direction at a punching speed of 2 to 5 m / s to obtain single resistors.

5. The method for manufacturing a small-volume high-power alloy resistor according to claim 4, characterized in that: In S1, the high temperature smelting temperature is 1520~1600℃, and after smelting, the temperature is kept for 30 minutes for alloying.

6. The method for manufacturing a small-volume high-power alloy resistor according to claim 4, characterized in that: In S2, the thickness of the square wire is calculated based on the formula R=ρ·L / (W·T), where R refers to the resistance value of the alloy resistor, ρ is the resistivity of the alloy itself, L is the equivalent length of the alloy resistor between the two measurement points; W is the length of the equivalent cross-section of the alloy resistor between the two measurement points, and T represents the thickness of the equivalent cross-section of the alloy resistor between the two measurement points.

7. The method for manufacturing a small-volume high-power alloy resistor according to claim 4, characterized in that: In S2, the temperature of the strip drawing process is 600~700℃, and the strip is gradually thinned to the target thickness in 3~5 steps.

8. The method for manufacturing a small-volume high-power alloy resistor according to claim 4, characterized in that: In S303 , the heat treatment temperature is 420±5° C., and the nitrogen flow rate is 5 to 10 L / min.

9. The method for manufacturing a small-volume high-power alloy resistor according to claim 4, characterized in that: In S4, the cutting interval is controlled to 0.03~0.06 inches, and the surface of the single resistor is cleaned after punching.

10. The method for manufacturing a small-volume high-power alloy resistor according to claim 4, characterized in that: After S4, the resistance of each resistor is tested with a test current of 1 to 10 mA.

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