Packaging structure and packaging method

Abstract

The invention discloses a packaging structure and a packaging method, and the packaging structure comprises a lead frame which comprises a base island for mounting a chip and a pin for electrical connection; the chip is mounted on the base island; the plurality of welding pads are positioned on the pins and the chip, and any two of the welding pads are respectively a first welding pad and a second welding pad; one end of the bonding wire is arranged on the bonding pad, the other end of the bonding wire is located above the corresponding bonding pad, and the bonding wire comprises a first bonding wire arranged on the first bonding pad and a second bonding wire arranged on the second bonding pad; and the conductive layer is arranged above the chip, and the conductive layer is electrically connected with the first bonding wire and the second bonding wire respectively. According to the invention, the overall structural strength of the electric connection circuit can be improved, and different complex packaging structures can be adapted.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor packaging, and in particular to a packaging structure and a packaging method. Background Art

[0002] With the development of technology, the requirements for the functional integration of chip packaging structures are becoming higher and higher. Therefore, many large-sized chips and chip packaging structures have emerged. As a result, the bonding wires in the packaging structure are also required to meet the requirements of large-sized packaging structures. Therefore, the length of the bonding wires is also getting longer and longer.

[0003] However, excessively long welding wires lack support and have low structural strength. In addition, the manufacturing process of long welding wires is also difficult, and problems such as unstable wire arc, wire collapse, and wire collision are very likely to occur, thus causing the packaging structure to fail. Summary of the Invention

[0004] The problem solved by the embodiments of the present invention is to provide a packaging structure and a packaging method, which are conducive to improving the overall structural strength of the electrical connection circuit and adapting to different complex packaging structures.

[0005] To solve the above problems, an embodiment of the present invention provides a packaging structure, comprising: a lead frame, comprising a base island for mounting a chip and pins for electrical connection; a chip, mounted on the base island; a plurality of welding pads, located on the pins and the chip, with any two of the welding pads being a first welding pad and a second welding pad respectively; a welding wire, one end of which is arranged on the welding pad and the other end is located above the corresponding welding pad, the welding wire comprising a first welding wire arranged on the first welding pad and a second welding wire arranged on the second welding pad; a conductive layer, arranged above the chip, and the conductive layer being electrically connected to the first welding wire and the second welding wire, respectively.

[0006] Optionally, the angle formed between the bonding wire and the surface of the lead frame is 60° to 90°.

[0007] Optionally, the bonding wire is perpendicular to the surface of the lead frame.

[0008] Optionally, one end of the conductive layer contacts the top end of the first bonding wire, and the other end of the conductive layer contacts the top end of the second bonding wire.

[0009] Optionally, the packaging structure also includes: a first plastic layer, covering the lead frame and encapsulating the chip, the first welding wire and the second welding wire exposed on the top of the first plastic layer; the conductive layer is located on the first plastic layer and is electrically connected to the exposed first welding wire and the second welding wire.

[0010] Optionally, a groove is formed on the top of the first plastic packaging layer, and the first welding wire and the second welding wire are exposed on the bottom of the groove; the conductive layer is filled in the groove.

[0011] Optionally, the groove extends from the top of the first welding wire to the top of the second welding wire.

[0012] Optionally, the first welding wire and the second welding wire are exposed on the top surface of the first plastic packaging layer; and the conductive layer protrudes from the top surface of the first plastic packaging layer.

[0013] Optionally, the conductive layer extends from the top of the first bonding wire to the top of the second bonding wire.

[0014] Optionally, the packaging structure further includes: a second plastic packaging layer covering the first plastic packaging layer and the conductive layer.

[0015] Optionally, the first pad is located on the pin, and the second pad is located on the chip; or, the first pad and the second pad are both located on the same chip; or, the first pad and the second pad are respectively located on different chips.

[0016] Optionally, the bonding wire is a first type bonding wire, and the packaging structure further includes a second type bonding wire, and two ends of the second type bonding wire are directly electrically connected to two different bonding pads respectively.

[0017] Correspondingly, an embodiment of the present invention also provides a packaging method, comprising: providing a lead frame, comprising a base island for mounting a chip and pins for electrical connection; mounting a chip on the base island; the pins and the chip have multiple welding pads, any two of the welding pads are used as the first welding pad and the second welding pad, and welding wires are formed on the welding pads, one end of the welding wire is set on the welding pad, and the other end is located above the corresponding welding pad, the welding wire includes a first welding wire set on the first welding pad, and a second welding wire set on the second welding pad; and a conductive layer is formed above the chip, which is electrically connected to the first welding wire and the second welding wire respectively.

[0018] Optionally, in the step of forming a bonding wire on the bonding pad, an angle formed between the bonding wire and the surface of the lead frame is 60° to 90°.

[0019] Optionally, in the step of forming a bonding wire on the bonding pad, the bonding wire is perpendicular to the surface of the lead frame.

[0020] Optionally, in the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, one end of the conductive layer contacts the top of the first bonding wire, and the other end contacts the top of the second bonding wire.

[0021] Optionally, before forming a conductive layer above the chip that is electrically connected to the first bonding wire and the second bonding wire, respectively, the step further includes: forming a first plastic packaging layer covering the lead frame and encapsulating the chip, with the first bonding wire and the second bonding wire exposed on the top of the first plastic packaging layer; in the step of forming a conductive layer above the chip that is electrically connected to the first bonding wire and the second bonding wire, respectively, the conductive layer is formed on the first plastic packaging layer and is electrically connected to the exposed first bonding wire and the second bonding wire.

[0022] Optionally, a first molding layer is formed to cover the lead frame and encapsulate the chip, and the first bonding wire and the second bonding wire are exposed on the top of the first molding layer, comprising: forming a molding material layer to cover the lead frame and encapsulate the chip and the bonding wire; patterning a portion of the thickness of the molding material layer to form a groove exposing the first bonding wire and the second bonding wire, and retaining the remaining molding material layer as the first molding layer; and in the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the conductive layer is filled in the groove.

[0023] Optionally, in the step of patterning a portion of the molding material layer to form a groove exposing the first bonding wire and the second bonding wire, the groove extends from the top of the first bonding wire to the top of the second bonding wire.

[0024] Optionally, a laser process is used to pattern a portion of the plastic encapsulation material layer to form a groove exposing the first welding wire and the second welding wire.

[0025] Optionally, a first molding layer is formed to cover the lead frame and encapsulate the chip, and the first welding wire and the second welding wire are exposed on the top of the first molding layer, comprising the steps of: forming a molding material layer covering the lead frame and encapsulating the chip and the welding wire; removing a portion of the thickness of the molding material layer until the first welding wire and the second welding wire are exposed, and retaining the remaining molding material layer as the first molding layer; and in the step of forming a conductive layer electrically connected to the first welding wire and the second welding wire respectively above the chip, the conductive layer protrudes from the top surface of the first molding layer.

[0026] Optionally, in the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the conductive layer extends from the top of the first bonding wire to the top of the second bonding wire.

[0027] Optionally, the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip includes: forming a conductive material layer covering the first plastic encapsulation layer; patterning the conductive material layer, and retaining the conductive material layer between the top of the first bonding wire and the top of the second bonding wire as the conductive layer.

[0028] Optionally, after forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the packaging method further includes: forming a second plastic sealing layer covering the first plastic sealing layer and the conductive layer.

[0029] Optionally, before forming the second plastic encapsulation layer covering the first plastic encapsulation layer and the conductive layer, the method further includes: performing a surface roughening treatment on the first plastic encapsulation layer.

[0030] Optionally, the step of forming a welding wire on the welding pad further includes: the welding wire is a first type welding wire, and in addition to the first type welding wire, a second type welding wire is also formed simultaneously, and both ends of the second type welding wire are directly electrically connected to two different welding pads respectively.

[0031] Optionally, in the step of forming multiple solder pads on the pin and the chip, with any two of the solder pads being the first solder pad and the second solder pad, the first solder pad is located on the pin, and the second solder pad is located on the chip; or, the first solder pad and the second solder pad are both located on the same chip; or, the first solder pad and the second solder pad are respectively located on different chips.

[0032] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0033] In the packaging structure provided by the embodiment of the present invention, one end of the bonding wire is arranged on the bonding pad, and the other end is located above the corresponding bonding pad. The bonding wire includes a first bonding wire arranged on the first bonding pad and a second bonding wire arranged on the second bonding pad. The conductive layer is arranged above the chip, and the conductive layer is electrically connected to the first bonding wire and the second bonding wire respectively. In the embodiment of the present invention, the electrical connection line between the first bonding pad and the second bonding pad is divided into the first bonding wire, the second bonding wire and the conductive layer. Compared with directly using a longer bonding wire to realize the electrical connection line between the first bonding pad and the second bonding pad, the present solution has a lower process difficulty in forming a shorter bonding wire, and is conducive to avoiding the problems of unstable bonding wire, wire collapse, wire throwing, and wire collision caused by the lack of support and low structural strength of the bonding wire due to the long bonding wire. Therefore, the use of the shorter first bonding wire, the second bonding wire, and the conductive layer combined electrical connection line is conducive to improving the overall structural strength of the electrical connection line, thereby improving the reliability of the packaging structure. Moreover, by using the first bonding wire, the second bonding wire, and the conductive layer combined electrical connection line, the arrangement of the bonding wires can be flexibly adjusted, which is conducive to adapting to different complex packaging structures. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a structural diagram of a packaging structure;

[0035] Figure 2 It is a structural schematic diagram corresponding to an embodiment of the packaging structure of the present invention;

[0036] Figure 3 is a structural schematic diagram corresponding to another embodiment of the packaging structure of the present invention;

[0037] Figure 4 is a flowchart corresponding to an embodiment of the packaging method of the present invention;

[0038] Figures 5 to 10 This is a schematic structural diagram corresponding to each step in an embodiment of a packaging method of the present invention;

[0039] Figures 11 to 14 It is a structural schematic diagram corresponding to each step in an embodiment of the packaging method of the present invention. DETAILED DESCRIPTION

[0040] From the background technology, it can be seen that it is currently difficult to improve the overall structural strength of the electrical connection circuit of the packaging structure, and it is difficult to adapt to different complex packaging structures. Now, based on a packaging structure, the reasons why it is difficult to improve the overall structural strength of the electrical connection circuit of the packaging structure and it is difficult to adapt to different complex packaging structures are explained.

[0041] Figure 1 It is a structural diagram of a packaging structure.

[0042] refer to Figure 1 The packaging structure includes: a lead frame 10, including a base island 11 for mounting a chip and pins 12 for electrical connection; a chip 20, mounted on the base island 11; a plurality of bonding pads 30, located on the pins 12 and the chip 20; a bonding wire 40, with both ends respectively located on two different bonding pads 30 to electrically connect the two different bonding pads 30; a plastic encapsulation layer 51, covering the lead frame 10, and encapsulating the chip 20, the plurality of bonding pads 30, and the bonding wire 40.

[0043] In the current packaging structure, the requirements for the functional integration of the chip 20 packaging structure are getting higher and higher. Therefore, many large-sized chips 20 and chip 20 packaging structures have appeared. As a result, the bonding wires 40 in the packaging structure are also required to meet the requirements of the large-sized packaging structure. Therefore, the length of the bonding wires 40 is getting longer and longer. Figure 1 As shown in the figure, the welding wire 40 electrically connecting the chip 20 and the pin 12 is too long. The excessively long welding wire has low structural strength due to lack of support, and is easily impacted and unstable during the process of forming the plastic packaging layer 51. At the same time, the process difficulty of the long welding wire is also relatively high, which makes it easy to have problems such as unstable wire arc, wire collapse, and wire collision, thereby causing the packaging structure to fail, and it is difficult to improve the overall structural strength of the electrical connection circuit of the packaging structure, and it is also difficult to adapt to different complex packaging structures.

[0044] In order to solve the above technical problems, the present invention provides a packaging structure, including: a lead frame, including a base island for mounting a chip and pins for electrical connection; a chip, mounted on the base island; a plurality of welding pads, located on the pins and the chip, with any two of the welding pads being respectively a first welding pad and a second welding pad; a welding wire, one end of which is arranged on the welding pad and the other end is located above the corresponding welding pad, the welding wire including a first welding wire arranged on the first welding pad and a second welding wire arranged on the second welding pad; a conductive layer, arranged above the chip, and the conductive layer is electrically connected to the first welding wire and the second welding wire, respectively.

[0045] In an embodiment of the present invention, the electrical connection circuit between the first welding pad and the second welding pad is divided into a first welding wire, a second welding wire and a conductive layer. Compared with directly using a longer welding wire to realize the electrical connection circuit between the first welding pad and the second welding pad, the process difficulty of forming a shorter welding wire in this scheme is lower, and it is beneficial to avoid the long welding wire and lack of support, low structural strength, resulting in unstable welding wire, wire collapse, wire throwing, wire collision and other problems. Therefore, the use of a shorter first welding wire and a second welding wire, as well as a conductive layer to combine the electrical connection circuit is beneficial to improving the overall structural strength of the electrical connection circuit, thereby improving the reliability of the packaging structure. Moreover, by using the first welding wire, the second welding wire, and the conductive layer to combine the electrical connection circuit, the arrangement of the welding wires can be flexibly adjusted, which is beneficial to adapt to different complex packaging structures.

[0046] In order to make the above-mentioned objects, features and advantages of the embodiments of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0047] Figure 2 It is a structural schematic diagram corresponding to an embodiment of the packaging structure of the present invention.

[0048] refer to Figure 2 The packaging structure includes: a lead frame 100, including a base island 110 for mounting a chip and pins 120 for electrical connection; a chip 200, mounted on the base island 110; a plurality of bonding pads 300, located on the pins 120 and the chip 200, with any two of the bonding pads 300 being a first bonding pad 310 and a second bonding pad 320; a bonding wire 400, one end of which is arranged on the bonding pad 300, and the other end is located above the corresponding bonding pad 300, the bonding wire 400 including a first bonding wire 410 arranged on the first bonding pad 310, and a second bonding wire 420 arranged on the second bonding pad 320; a conductive layer 600, arranged above the chip 200, and the conductive layer 600 is electrically connected to the first bonding wire 410 and the second bonding wire 420, respectively.

[0049] The lead frame 100 is used to achieve electrical connection between the chip 200 mounted on the lead frame 100 and the outside.

[0050] Specifically, in this embodiment, the base island 110 is used to carry the chip 200, and the pins 120 are used to electrically connect to the chip 200, so that the chip 200 can be electrically connected to the external circuit structure through the pins 120, thereby providing the chip 200 with input / output ports.

[0051] In this embodiment, the material of the lead frame 100 includes metal materials such as copper, copper alloy, or nickel-iron alloy.

[0052] The chip 200 is used to achieve the performance requirements of the package structure. Specifically, chips 200 with different functions can be selected according to the performance requirements of the package structure.

[0053] The soldering pad 300 is used to position the soldering wire 400 , and is also used to support the soldering wire 400 to fix the soldering wire 400 .

[0054] In this embodiment, a plurality of bonding pads 300 are located on the pins 120 and the chip 200 , that is, bonding pads 300 can be formed on both the pins 120 and the chip 200 to achieve electrical connection.

[0055] In this embodiment, any two of the pads 300 are respectively the first pad 310 and the second pad 320, which means that the first pad 310 and the second pad 320 can be located on the chip 200 and the pin 120 respectively, or the first pad 310 and the second pad 320 can be located on the same chip 200, or the first pad 310 and the second pad 320 can be located on different chips 200, or the first pad 310 and the second pad 320 can be located on the pin 120.

[0056] Specifically, Figure 2 Shows various situations of the position layout of the first pad 310 and the second pad 320, such as Figure 2 As shown in (a), the first pad 310 is located on the pin 120, and the second pad 320 is located on the chip 200. Figure 2 As shown in (b), the first pad 310 and the second pad 320 are both located on the same chip 200. Figure 2 As shown in (c), the first bonding pad 310 and the second bonding pad 320 are respectively located on different chips 200 .

[0057] In this embodiment, the material of the welding pad 300 is metal material.

[0058] The bonding wires 400 are used to realize the routing of interconnected circuits. Specifically, the bonding wires 400 can be used to realize the interconnection between the chip 200 and the pins 120, the bonding wires 400 can also be used to realize the interconnection between the functional units inside the chip 200, and the bonding wires 400 can also be used to realize the interconnection between different chips 200.

[0059] It should be noted that one end of the bonding wire 400 is disposed on the bonding pad 300 , and the other end is located above the corresponding bonding pad 300 , which means that the bonding wire 400 is extended longitudinally from the bonding pad 300 to the space above the bonding pad 300 .

[0060] The welding wires 400 include a first welding wire 410 disposed on the first welding pad 310 and a second welding wire 420 disposed on the second welding pad 320 . The first welding wire 410 and the second welding wire 420 are used to achieve electrical connection to achieve electrical connection between the first welding pad 320 and the second welding pad 320 .

[0061] It should be noted that, in this embodiment, the above-mentioned welding wire 400 is a first type of welding wire, which realizes the electrical connection of two different welding pads 300 through the conductive layer 600. The packaging structure also includes a second type of welding wire, which is directly electrically connected to the two different welding pads 300 respectively to directly realize the electrical connection of the two different welding pads 300.

[0062] In this embodiment, the angle formed between the bonding wire 400 and the surface of the lead frame 100 is 60° to 90°.

[0063] The angle formed by the bonding wire 400 and the surface of the lead frame 100 is 60° to 90°, that is, the angle formed by the bonding wire 400 and the surface of the lead frame 100 is large, so that the bonding wire 400 is better supported and the risk of collapse of the bonding wire 400 is reduced.

[0064] In this embodiment, the bonding wires 400 are perpendicular to the surface of the lead frame 100 .

[0065] The bonding wires 400 are perpendicular to the surface of the lead frame 100 , so the lead frame 100 can provide more comprehensive and stable support for the bonding wires 400 , thereby further improving support for the bonding wires 400 and reducing the risk of the bonding wires 400 collapsing.

[0066] As an example, in this embodiment, the bonding wire 400 is a copper wire.

[0067] The conductive layer 600 is used to electrically connect the first bonding wire 410 and the second bonding wire 420 to achieve an electrical connection between the first bonding pad 310 and the second bonding pad 320 .

[0068] In this embodiment, the electrical connection line between the first welding pad 310 and the second welding pad 320 is divided into a first welding wire 410, a second welding wire 420 and a conductive layer 600. Compared with directly using a longer welding wire to realize the electrical connection line between the first welding pad and the second welding pad, the process difficulty of forming a shorter welding wire 400 in this solution is lower, and it is beneficial to avoid the welding wire 400 being long and lacking support and having low structural strength, resulting in problems such as unstable welding wire 400, wire collapse, wire throwing, and wire collision. Therefore, the use of a shorter first welding wire 410, a second welding wire 420, and a conductive layer 600 to combine the electrical connection line is beneficial to improving the overall structural strength of the electrical connection line, thereby improving the reliability of the packaging structure. Moreover, by using the first welding wire 410, the second welding wire 420, and the conductive layer 600 to combine the electrical connection line, the arrangement of the welding wire 400 can be flexibly adjusted, which is beneficial to adapt to different complex packaging structures.

[0069] In this embodiment, one end of the conductive layer 600 contacts the top of the first bonding wire 410 , and the other end contacts the top of the second bonding wire 420 .

[0070] One end of the conductive layer 600 contacts the top of the first welding wire 410 , and the other end contacts the top of the second welding wire 420 , thereby fully utilizing the first welding wire 410 and the second welding wire 420 without causing circuit waste and redundancy.

[0071] In this embodiment, the conductive layer 600 is made of metal.

[0072] Specifically, if Figure 2 As shown, Figure 2 In (a), the first bonding pad 310 is located on the pin 120, and the second bonding pad 320 is located on the chip 200. The first bonding pad 310 and the second bonding pad 320 are far apart. The first bonding wire 410, the second bonding wire 420, and the conductive layer 600 realize the interconnection between the first bonding pad 310 on the pin 120 and the second bonding pad 320 on the chip 320. Figure 2 In (b), the first bonding pad 310 and the second bonding pad 320 are both located on the same chip 200, and the first bonding wire 410, the second bonding wire 420 and the conductive layer 600 realize interconnection lines between different distant regions on the same chip 200. Figure 2In (c), the first bonding pad 310 and the second bonding pad 320 are respectively located on different chips 200, and the first bonding wire 410, the second bonding wire 420 and the conductive layer 600 realize the interconnection lines between different chips 200 that are far away. It can be seen that this embodiment uses the first bonding wire 410, the second bonding wire 420 and the conductive layer 600 to realize circuit interconnection lines with a longer distance, which can be applied to various complex circuit structures, thereby helping to improve the applicability of the packaging structure to different complex circuits.

[0073] In this embodiment, the packaging structure further includes a first plastic layer 510 covering the lead frame 100 and encapsulating the chip 200 , with the first bonding wire 410 and the second bonding wire 420 exposed at the top of the first plastic layer 510 .

[0074] The first plastic encapsulation layer 510 is used to encapsulate the lead frame 100, chip 200 and welding wire 400. The first plastic encapsulation layer 510 is also used to protect the chip 200 and welding wire 400. The first welding wire 410 and the second welding wire 420 are exposed at the top of the first plastic encapsulation layer 510, so that the conductive layer 600 can be electrically connected to the exposed first welding wire 410 and the second welding wire 420.

[0075] In this embodiment, the conductive layer 600 is located on the first plastic packaging layer 510 and is electrically connected to the exposed first bonding wires 410 and second bonding wires 420 .

[0076] The conductive layer 600 is located on the first plastic encapsulation layer 510, so as to utilize the first plastic encapsulation layer 510 to support the conductive layer 600, provide a process platform for the formation of the conductive layer 600, and be electrically connected to the exposed first welding wire 410 and second welding wire 420 to achieve mutual electrical connection between the first welding wire 410 and the second welding wire 420.

[0077] In this embodiment, a groove 520 is formed on the top of the first plastic packaging layer 510 , and the first welding wire 410 and the second welding wire 420 are exposed on the bottom surface of the groove 520 .

[0078] The groove 520 is used to provide a space for forming the conductive layer 600 , and the bottom surface of the groove 520 exposes the first welding wire 410 and the second welding wire 420 , so that the conductive layer 600 formed in the groove 520 can be electrically connected to the first welding wire 410 and the second welding wire 420 .

[0079] Accordingly, in this embodiment, the conductive layer 600 is filled in the groove 520 .

[0080] In this embodiment, the groove 520 extends from the top of the first welding wire 410 to the top of the second welding wire 420 .

[0081] The groove 520 extends from the top of the first welding wire 410 to the top of the second welding wire 420, providing sufficient space for forming a conductive layer 600 electrically connected to the first welding wire 410 and the second welding wire 420 without causing excessive circuit waste and redundancy.

[0082] In this embodiment, the first plastic encapsulation layer 510 is made of a molding material, such as epoxy resin. Epoxy resin has advantages such as low shrinkage, good adhesion, good corrosion resistance, excellent electrical properties, and low cost. In other embodiments, the first plastic encapsulation layer may also be made of other suitable packaging materials.

[0083] In this embodiment, the packaging structure further includes: a second plastic packaging layer 530 covering the first plastic packaging layer 510 and the conductive layer 600 .

[0084] The second plastic layer 530 is used to protect the conductive layer 600 and the first plastic layer 510 .

[0085] In this embodiment, the second plastic encapsulation layer 530 is made of a molding material, such as epoxy resin. Epoxy resin has advantages such as low shrinkage, good adhesion, good corrosion resistance, excellent electrical properties, and low cost. In other embodiments, the second plastic encapsulation layer may also be made of other suitable packaging materials.

[0086] Figure 3 It is a structural schematic diagram corresponding to another embodiment of the packaging structure of the present invention.

[0087] The similarities between this embodiment and the above embodiment are not described in detail here. The difference between this embodiment and the above embodiment is that the relative position of the conductive layer and the first plastic packaging layer is different.

[0088] refer to Figure 3 In this embodiment, the first welding wire 411 and the second welding wire 421 are exposed on the top surface of the first plastic sealing layer 511 .

[0089] The first bonding wire 411 and the second bonding wire 421 are exposed on the top surface of the first plastic layer 511 , so that the conductive layer 601 formed on the top surface of the first plastic layer 511 can be electrically connected to the first bonding wire 411 and the second bonding wire 421 .

[0090] Accordingly, in this embodiment, the conductive layer 601 protrudes from the top surface of the first plastic packaging layer 511 .

[0091] In this embodiment, the conductive layer 601 extends from the top of the first bonding wire 411 to the top of the second bonding wire 421 .

[0092] The conductive layer 601 extends from the top of the first bonding wire 411 to the top of the second bonding wire 421 , ensuring that the first bonding wire 411 and the second bonding wire 421 can be interconnected through the conductive layer 601 without causing excessive line waste and redundancy.

[0093] The present invention also provides a packaging method. Figure 4 It is a flowchart corresponding to an embodiment of the packaging method of the present invention.

[0094] In this embodiment, the packaging method includes the following basic steps:

[0095] Step S1: providing a lead frame, including a base island for mounting a chip and pins for electrical connection;

[0096] Step S2: mounting the chip on the base island;

[0097] Step S3: The pin and the chip have a plurality of bonding pads, any two of which are designated as a first bonding pad and a second bonding pad, and bonding wires are formed on the bonding pads, with one end of the bonding wire being disposed on the bonding pad and the other end being located above the corresponding bonding pad, the bonding wires including a first bonding wire disposed on the first bonding pad and a second bonding wire disposed on the second bonding pad;

[0098] Step S4: forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip.

[0099] In an embodiment of the present invention, the electrical connection circuit between the first welding pad and the second welding pad is divided into a first welding wire, a second welding wire and a conductive layer. Compared with directly using a longer welding wire to realize the electrical connection circuit between the first welding pad and the second welding pad, the process difficulty of forming a shorter welding wire in this scheme is lower, and it is beneficial to avoid the long welding wire and lack of support, low structural strength, resulting in unstable welding wire, wire collapse, wire throwing, wire collision and other problems. Therefore, the use of a shorter first welding wire and a second welding wire, as well as a conductive layer to combine the electrical connection circuit is beneficial to improving the overall structural strength of the electrical connection circuit, thereby improving the reliability of the packaging structure. Moreover, by using the first welding wire, the second welding wire, and the conductive layer to combine the electrical connection circuit, the arrangement of the welding wires can be flexibly adjusted, which is beneficial to adapt to different complex packaging structures.

[0100] In order to make the above-mentioned objects, features and advantages of the embodiments of the present invention more obvious and easy to understand, a specific embodiment of the packaging method of the present invention is described in detail below.

[0101] Figures 5 to 10 This is a schematic diagram of the structure corresponding to each step in an embodiment of the packaging method of the present invention, combined with Figures 4 to 10 The specific embodiments of the packaging method of the present invention are described in detail.

[0102] Execute step S1: provide a lead frame 100, including a base island 110 for mounting a chip and pins 120 for electrical connection.

[0103] The lead frame 100 is used to achieve electrical connection between a chip mounted on the lead frame 100 and the outside.

[0104] Specifically, in this embodiment, the base island 110 is used to carry a chip, and the pins 120 are used to electrically connect to the chip, so that the chip can be electrically connected to an external circuit structure through the pins 120, thereby providing the chip with input / output ports.

[0105] In this embodiment, the material of the lead frame 100 includes metal materials such as copper, copper alloy, or nickel-iron alloy.

[0106] Continue to refer Figure 5 , executing step S2: mounting the chip 200 on the base island 110 .

[0107] The chip 200 is used to achieve the performance requirements of the package structure. Specifically, chips 200 with different functions can be selected according to the performance requirements of the package structure.

[0108] refer to Figure 6 , execute step S3: there are multiple welding pads 300 on the pin 120 and the chip 200, any two of the welding pads 300 are used as the first welding pad 310 and the second welding pad 320, and welding wires 400 are formed on the welding pads 300, one end of the welding wire 400 is set on the welding pad 300, and the other end is located above the corresponding welding pad 300, and the welding wire 400 includes a first welding wire 410 set on the first welding pad 310, and a second welding wire 420 set on the second welding pad 320.

[0109] The welding pad 300 is used to position the welding wire and is also used to support the welding wire to fix the welding wire.

[0110] In this embodiment, a plurality of bonding pads 300 are located on the pins 120 and the chip 200 , that is, bonding pads 300 can be formed on both the pins 120 and the chip 200 to achieve electrical connection.

[0111] In this embodiment, any two of the pads 300 are respectively the first pad 310 and the second pad 320, which means that the first pad 310 and the second pad 320 can be located on the chip 200 and the pin 120 respectively, or the first pad 310 and the second pad 320 can be located on the same chip 200, or the first pad 310 and the second pad 320 can be located on different chips 200, or the first pad 310 and the second pad 320 can be located on the pin 120.

[0112] In this embodiment, the material of the welding pad 300 is metal material.

[0113] The bonding wires 400 are used to realize the routing of interconnected circuits. Specifically, the bonding wires 400 can be used to realize the interconnection between the chip 200 and the pins 120, the bonding wires 400 can also be used to realize the interconnection between the functional units inside the chip 200, and the bonding wires 400 can also be used to realize the interconnection between different chips 200.

[0114] It should be noted that one end of the bonding wire 400 is disposed on the bonding pad 300 , and the other end is located above the corresponding bonding pad 300 , which means that the bonding wire 400 is extended longitudinally from the bonding pad 300 to the space above the bonding pad 300 .

[0115] The welding wires 400 include a first welding wire 410 disposed on the first welding pad 310 and a second welding wire 420 disposed on the second welding pad 320 . The first welding wire 410 and the second welding wire 420 are used to achieve electrical connection to achieve electrical connection between the first welding pad 320 and the second welding pad 320 .

[0116] It should be noted that, in this embodiment, in the step of forming the welding wire 400 on the welding pad 300, the welding wire 400 is a first type of welding wire, and the packaging structure also includes a second type of welding wire, which is directly electrically connected to two different welding pads 300 respectively to directly realize the electrical connection between the two different welding pads 300.

[0117] In this embodiment, in the step of forming the bonding wire 400 on the bonding pad 300 , the angle formed between the bonding wire 400 and the surface of the lead frame 100 is 60° to 90°.

[0118] The angle formed by the bonding wire 400 and the surface of the lead frame 100 is 60° to 90°, that is, the angle formed by the bonding wire 400 and the surface of the lead frame 100 is large, so that the bonding wire 400 is better supported and the risk of collapse of the bonding wire 400 is reduced.

[0119] In this embodiment, in the step of forming the bonding wires 400 on the bonding pads 300 , the bonding wires 400 are perpendicular to the surface of the lead frame 100 .

[0120] The bonding wires 400 are perpendicular to the surface of the lead frame 100 , so the lead frame 100 can provide more comprehensive and stable support for the bonding wires 400 , thereby further improving support for the bonding wires 400 and reducing the risk of the bonding wires 400 collapsing.

[0121] In this embodiment, a wire bonding process is used to form the bonding wire 400 on the bonding pad 300 .

[0122] Specifically, in this embodiment, vertical bonding is performed on the bonding pad 300 .

[0123] As an example, in this embodiment, in the step of forming the bonding wire 400 on the bonding pad 300 , the bonding wire 400 is a copper wire.

[0124] Specifically, Figure 6 1 and 2 show various positions of the first pad 310 and the second pad 320, and the corresponding positions of the first bonding wire 410 and the second bonding wire 420, as shown in FIG. Figure 6 As shown in (a), the first bonding pad 310 is located on the pin 120, and the second bonding pad 320 is located on the chip 200. Accordingly, the first bonding wire 410 is formed on the pin 120, and the second bonding wire 420 is formed on the chip 200. The first bonding wire 410 and the second bonding wire 420 are used to realize the interconnection between the second bonding pad 320 of the chip 200 and the first bonding pad 310 of the pin 120 which are farther away, as shown in FIG. Figure 6 As shown in (b), the first bonding pad 310 and the second bonding pad 320 are both located on the same chip 200, and the corresponding first bonding wire 410 and the second bonding wire 420 are formed on the same chip 200. The first bonding wire 410 and the second bonding wire 420 are used to realize the interconnection between the distant areas on the same chip 200, as shown in FIG. Figure 6 As shown in (c), the first bonding pad 310 and the second bonding pad 320 are respectively located on different chips 200, and the corresponding first bonding wire 410 and the second bonding wire 420 are respectively formed on different chips 200. The first bonding wire 410 and the second bonding wire 420 are used to achieve interconnection between different chips 200 that are far away. It can be seen that this embodiment uses the first bonding wire 410, the second bonding wire 420 and the conductive layer 600 to achieve circuit interconnection lines with longer distances, which can be applicable to various complex circuit structures, thereby helping to improve the applicability of the packaging structure to different complex circuits.

[0125] Combined with reference Figures 7 and 8 , before forming a conductive layer above the chip 200 that is electrically connected to the first bonding wire 410 and the second bonding wire 420 respectively, it also includes: forming a first plastic packaging layer 510 covering the lead frame 100 and encapsulating the chip 200, and the first bonding wire 410 and the second bonding wire 420 are exposed on the top of the first plastic packaging layer 510.

[0126] The first plastic encapsulation layer 510 is used to encapsulate the lead frame 100, chip 200 and welding wire 400. The first plastic encapsulation layer 510 is also used to protect the chip 200 and welding wire 400. The first welding wire 410 and the second welding wire 420 are exposed at the top of the first plastic encapsulation layer 510, so that the subsequently formed conductive layer can be electrically connected to the exposed first welding wire 410 and the second welding wire 420.

[0127] In this embodiment, in the step of forming the first plastic encapsulation layer 510 covering the lead frame 100 and encapsulating the chip 200, the material of the first plastic encapsulation layer 510 is a molding material, such as epoxy resin. Epoxy resin has advantages such as low shrinkage, good adhesion, good corrosion resistance, excellent electrical properties, and low cost. In other embodiments, other suitable packaging materials may be used for the first plastic encapsulation layer.

[0128] Specifically, refer to Figure 7 , forming a first molding layer 510 covering the lead frame 100 and encapsulating the chip 200, wherein the first bonding wire 410 and the second bonding wire 420 are exposed on the top of the first molding layer 510 includes: forming a molding material layer 500 covering the lead frame 100 and encapsulating the chip 200 and the bonding wire 400.

[0129] The molding material layer 500 is used to form a first molding layer 510 .

[0130] refer to Figure 8 , patterning a portion of the thickness of the molding material layer 500 to form a groove 520 exposing the first welding wire 410 and the second welding wire 420 , and retaining the remaining molding material layer 500 as the first molding layer 510 .

[0131] The groove 520 is used to provide a spatial location for the subsequent formation of a conductive layer, and the bottom surface of the groove 520 exposes the first welding wire 410 and the second welding wire 420, so that the conductive layer formed in the groove 520 can be electrically connected to the first welding wire 410 and the second welding wire 420.

[0132] In this embodiment, in the step of patterning the partial thickness of the molding material layer 500 to form a groove 520 exposing the first welding wire 410 and the second welding wire 420 , the groove 520 extends from the top of the first welding wire 410 to the top of the second welding wire 420 .

[0133] The groove 520 extends from the top of the first welding wire 410 to the top of the second welding wire 420, providing sufficient space for forming a conductive layer electrically connected to the first welding wire 410 and the second welding wire 420 without causing excessive circuit waste and redundancy.

[0134] In this embodiment, a laser process is used to pattern a portion of the plastic encapsulation material layer 500 to form a groove 520 exposing the first welding wire 410 and the second welding wire 420 .

[0135] Laser technology is used to pattern a portion of the thickness of the plastic encapsulation material layer 500 to form a groove 520 exposing the first welding line 410 and the second welding line 420. The positioning is more precise and the process is relatively simple, so that the position and depth of the formed groove 520 are more accurate.

[0136] Specifically, in this embodiment, the top ends of the first welding wire 410 and the second welding wire 420 are positioned respectively, and laser grooves are formed on the top of the molding material layer 500 to form grooves 520 extending from the top ends of the first welding wire 410 to the top ends of the second welding wire 420.

[0137] refer to Figure 9 , executing step S4: forming a conductive layer 600 electrically connected to the first bonding wire 410 and the second bonding wire 420 respectively above the chip 200 .

[0138] The conductive layer 600 is used to electrically connect the first bonding wire 410 and the second bonding wire 420 to achieve an electrical connection between the first bonding pad 310 and the second bonding pad 320 .

[0139] In this embodiment, the electrical connection line between the first welding pad 310 and the second welding pad 320 is divided into a first welding wire 410, a second welding wire 420 and a conductive layer 600. Compared with directly using a longer welding wire to realize the electrical connection line between the first welding pad and the second welding pad, the process difficulty of forming a shorter welding wire 400 in this solution is lower, and it is beneficial to avoid the welding wire 400 being long and lacking support and having low structural strength, resulting in problems such as unstable welding wire 400, wire collapse, wire throwing, and wire collision. Therefore, the use of a shorter first welding wire 410, a second welding wire 420, and a conductive layer 600 to combine the electrical connection line is beneficial to improving the overall structural strength of the electrical connection line, thereby improving the reliability of the packaging structure. Moreover, by using the first welding wire 410, the second welding wire 420, and the conductive layer 600 to combine the electrical connection line, the arrangement of the welding wire 400 can be flexibly adjusted, which is beneficial to adapt to different complex packaging structures.

[0140] In this embodiment, in the step of forming a conductive layer 600 electrically connected to the first bonding wire 410 and the second bonding wire 420 respectively above the chip 200, one end of the conductive layer 600 contacts the top of the first bonding wire 410 and the other end contacts the top of the second bonding wire 420.

[0141] One end of the conductive layer 600 contacts the top of the first welding wire 410 , and the other end contacts the top of the second welding wire 420 , thereby fully utilizing the first welding wire 410 and the second welding wire 420 without causing circuit waste and redundancy.

[0142] Accordingly, in this embodiment, in the step of forming a conductive layer 600 electrically connected to the first welding wire 410 and the second welding wire 420 respectively above the chip 200, the conductive layer 600 is formed on the first plastic encapsulation layer 510 and electrically connected to the exposed first welding wire 410 and the second welding wire 420.

[0143] The conductive layer 600 is formed on the first plastic encapsulation layer 510 to utilize the first plastic encapsulation layer 510 to support the conductive layer 600, provide a process platform for the formation of the conductive layer 600, and be electrically connected to the exposed first welding wire 410 and second welding wire 420 to achieve mutual electrical connection between the first welding wire 410 and the second welding wire 420.

[0144] Accordingly, in this embodiment, in the step of forming the conductive layer 600 electrically connected to the first bonding wire 410 and the second bonding wire 420 respectively above the chip 200 , the conductive layer 600 is filled in the groove 520 .

[0145] In this embodiment, the conductive layer 600 is formed by filling the groove 520 with an electroplating process or a deposition process.

[0146] In this embodiment, in the step of forming the conductive layer 600 electrically connected to the first bonding wire 410 and the second bonding wire 420 respectively above the chip 200 , the conductive layer 600 is made of a metal material.

[0147] Before subsequently forming the second plastic encapsulation layer covering the first plastic encapsulation layer 510 and the conductive layer 600 , the method further includes: performing a surface roughening treatment on the first plastic encapsulation layer 510 .

[0148] Performing a surface roughening treatment on the first plastic encapsulation layer 510 is beneficial to improving the bonding force between the subsequently formed second plastic encapsulation layer and the first plastic encapsulation layer 510 , thereby improving the packaging quality of the second plastic encapsulation layer and the first plastic encapsulation layer 510 .

[0149] refer to Figure 10 After forming a conductive layer 600 electrically connected to the first bonding wire 410 and the second bonding wire 420 respectively above the chip 200, the packaging method further includes: forming a second plastic layer 530 covering the first plastic layer 510 and the conductive layer 600.

[0150] The second plastic layer 530 is used to protect the conductive layer 600 and the first plastic layer 510 .

[0151] In this embodiment, in the step of forming the second plastic encapsulation layer 530 covering the first plastic encapsulation layer 510 and the conductive layer 600, the second plastic encapsulation layer 530 is made of a molding material, such as epoxy resin. Epoxy resin has advantages such as low shrinkage, good adhesion, good corrosion resistance, excellent electrical properties, and low cost. In other embodiments, other suitable packaging materials may be used for the second plastic encapsulation layer.

[0152] Figures 11 to 14 It is a structural schematic diagram corresponding to each step in another embodiment of the packaging method of the present invention.

[0153] The similarities between this embodiment and the above embodiment are not described in detail here. The difference between this embodiment and the above embodiment is that the method of forming the conductive layer on the first plastic encapsulation layer is different.

[0154] refer to Figure 11 , forming a first molding layer 511 covering the lead frame 101 and encapsulating the chip 201, wherein the first bonding wire 411 and the second bonding wire 421 are exposed on the top of the first molding layer 511. The step includes: forming a molding material layer 501 covering the lead frame 101 and encapsulating the chip 201 and the bonding wire 401.

[0155] The molding material layer 501 is used to form a first molding layer 511 .

[0156] refer to Figure 12 , remove a portion of the plastic encapsulation material layer 501 until the first welding wire 411 and the second welding wire 421 are exposed, and retain the remaining plastic encapsulation material layer 501 as the first plastic encapsulation layer 511 .

[0157] Part of the thickness of the molding material layer 501 is removed until the first welding wire 411 and the second welding wire 421 are exposed, in preparation for subsequently forming a conductive layer electrically connected to the first welding wire 401 and the second welding wire 421 .

[0158] Accordingly, combined with reference Figure 13 and Figure 14 In this embodiment, in the step of forming a conductive layer 601 electrically connected to the first bonding wire 411 and the second bonding wire 421 respectively above the chip 200 , the conductive layer 601 protrudes from the top surface of the first plastic layer 511 .

[0159] In this embodiment, in the step of forming a conductive layer 601 electrically connected to the first bonding wire 411 and the second bonding wire 421 above the chip 200 , the conductive layer 601 extends from the top of the first bonding wire 411 to the top of the second bonding wire 421 .

[0160] The conductive layer 601 extends from the top of the first bonding wire 411 to the top of the second bonding wire 421 , ensuring that the first bonding wire 411 and the second bonding wire 421 can be interconnected through the conductive layer 601 without causing excessive line waste and redundancy.

[0161] Specifically, refer to Figure 13 The step of forming a conductive layer 601 electrically connected to the first bonding wire 411 and the second bonding wire 421 respectively above the chip 200 includes: forming a conductive material layer 611 covering the first plastic packaging layer 511 .

[0162] The conductive material layer 611 is used to form the conductive layer 601 .

[0163] In this embodiment, a deposition process is used to form the conductive material layer 611 covering the first plastic packaging layer 511 .

[0164] refer to Figure 14 , patterning the conductive material layer 611 , retaining the conductive material layer 611 between the top of the first bonding wire 411 and the top of the second bonding wire 421 as the conductive layer 601 .

[0165] The conductive material layer 611 is patterned to retain the conductive layer 601 electrically connected to the first bonding wire 411 and the second bonding wire 421 and to reserve space for forming other structures.

[0166] In this embodiment, an etching process is used to pattern the conductive material layer 611 .

[0167] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A packaging structure, characterized in that: include: The lead frame includes a base island for mounting the chip and pins for electrical connection; A chip is mounted on the base island; A plurality of solder pads are located on the pins and the chip, with any two of the solder pads being respectively a first solder pad and a second solder pad; a bonding wire, one end of which is disposed on the bonding pad and the other end of which is located above the corresponding bonding pad, the bonding wire comprising a first bonding wire disposed on the first bonding pad and a second bonding wire disposed on the second bonding pad; A conductive layer is disposed above the chip and is electrically connected to the first bonding wire and the second bonding wire respectively.

2. The packaging structure according to claim 1, wherein: The angle formed by the bonding wire and the surface of the lead frame is 60° to 90°.

3. The packaging structure according to claim 1 or 2, wherein: The bonding wires are perpendicular to the surface of the lead frame.

4. The packaging structure according to claim 1, wherein: One end of the conductive layer contacts the top end of the first bonding wire, and the other end of the conductive layer contacts the top end of the second bonding wire.

5. The packaging structure according to claim 4, wherein: The packaging structure further includes: a first plastic packaging layer, covering the lead frame and encapsulating the chip, wherein the first bonding wire and the second bonding wire are exposed on the top of the first plastic packaging layer; The conductive layer is located on the first plastic packaging layer and is electrically connected to the exposed first and second bonding wires.

6. The packaging structure according to claim 5, wherein: A groove is formed on the top of the first plastic sealing layer, and the first welding wire and the second welding wire are exposed on the bottom surface of the groove; The conductive layer is filled in the groove.

7. The packaging structure according to claim 6, wherein: The groove extends from the top of the first welding wire to the top of the second welding wire.

8. The packaging structure according to claim 5, wherein: The first welding wire and the second welding wire are exposed on the top surface of the first plastic sealing layer; The conductive layer protrudes from the top surface of the first plastic packaging layer.

9. The packaging structure according to claim 8, wherein: The conductive layer extends from the top of the first bonding wire to the top of the second bonding wire.

10. The packaging structure according to claim 5, wherein: The packaging structure further includes: a second plastic packaging layer covering the first plastic packaging layer and the conductive layer.

11. The packaging structure according to claim 1, wherein: The first pad is located on the pin, and the second pad is located on the chip; Alternatively, the first bonding pad and the second bonding pad are both located on the same chip; Alternatively, the first bonding pad and the second bonding pad are respectively located on different chips.

12. The packaging structure according to claim 1, wherein: The bonding wire is a first type bonding wire, and the packaging structure further includes a second type bonding wire, wherein two ends of the second type bonding wire are directly electrically connected to two different bonding pads respectively.

13. A packaging method, characterized in that: include: Providing a lead frame, including a base island for mounting a chip and pins for electrical connection; mounting a chip on the base island; The pin and the chip have a plurality of bonding pads, any two of the bonding pads are designated as a first bonding pad and a second bonding pad, bonding wires are formed on the bonding pads, one end of the bonding wire is disposed on the bonding pad, and the other end is located above the corresponding bonding pad, the bonding wires including a first bonding wire disposed on the first bonding pad and a second bonding wire disposed on the second bonding pad; A conductive layer electrically connected to the first bonding wire and the second bonding wire is formed above the chip.

14. The packaging method according to claim 13, wherein: In the step of forming a bonding wire on the bonding pad, the angle formed by the bonding wire and the surface of the lead frame is 60° to 90°.

15. The packaging method according to claim 13 or 14, characterized in that: In the step of forming bonding wires on the bonding pads, the bonding wires are perpendicular to the surface of the lead frame.

16. The packaging method according to claim 13, wherein: In the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, one end of the conductive layer contacts the top of the first bonding wire and the other end contacts the top of the second bonding wire.

17. The packaging method according to claim 13, wherein: Before forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the method further includes: forming a first plastic packaging layer covering the lead frame and encapsulating the chip, with the first bonding wire and the second bonding wire exposed on the top of the first plastic packaging layer; In the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the conductive layer is formed on the first plastic packaging layer and electrically connected to the exposed first bonding wire and the second bonding wire.

18. The packaging method according to claim 17, wherein: The step of forming a first plastic packaging layer covering the lead frame and encapsulating the chip, wherein the first bonding wire and the second bonding wire are exposed on the top of the first plastic packaging layer comprises: forming a plastic packaging material layer covering the lead frame and encapsulating the chip and the bonding wire; Patterning a portion of the plastic encapsulation material layer to form a groove exposing the first welding wire and the second welding wire, and retaining the remaining plastic encapsulation material layer as the first plastic encapsulation layer; In the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the conductive layer is filled in the groove.

19. The packaging method according to claim 18, wherein: In the step of patterning the partial thickness of the molding material layer to form a groove exposing the first bonding wire and the second bonding wire, the groove extends from the top of the first bonding wire to the top of the second bonding wire.

20. The packaging method according to claim 18 or 19, wherein: A laser process is used to pattern a portion of the plastic encapsulation material layer to form a groove exposing the first welding wire and the second welding wire.

21. The packaging method according to claim 17, wherein: The step of forming a first plastic packaging layer covering the lead frame and encapsulating the chip, wherein the first bonding wire and the second bonding wire are exposed on the top of the first plastic packaging layer comprises: forming a plastic packaging material layer covering the lead frame and encapsulating the chip and the bonding wire; removing a portion of the plastic encapsulation material layer until the first welding line and the second welding line are exposed, and retaining the remaining plastic encapsulation material layer as the first plastic encapsulation layer; In the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the conductive layer protrudes from the top surface of the first plastic packaging layer.

22. The packaging method according to claim 21, wherein: In the step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the conductive layer extends from the top of the first bonding wire to the top of the second bonding wire.

23. The packaging method according to claim 21 or 22, wherein: The step of forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip includes: forming a conductive material layer covering the first plastic packaging layer; The conductive material layer is patterned, and the conductive material layer between the top end of the first bonding wire and the top end of the second bonding wire is retained as the conductive layer.

24. The packaging method according to claim 17, wherein: After forming a conductive layer electrically connected to the first bonding wire and the second bonding wire respectively above the chip, the packaging method further includes: forming a second plastic sealing layer covering the first plastic sealing layer and the conductive layer.

25. The packaging method according to claim 24, wherein: Before forming the second plastic encapsulation layer covering the first plastic encapsulation layer and the conductive layer, the method further includes: performing a surface roughening treatment on the first plastic encapsulation layer.

26. The packaging method according to claim 13, wherein: The step of forming bonding wires on the bonding pads further includes: the bonding wires are first type bonding wires, and second type bonding wires are formed simultaneously in addition to the first type bonding wires, wherein both ends of the second type bonding wires are directly electrically connected to two different bonding pads respectively.

27. The packaging method according to claim 13, wherein: The first pad is located on the pin, and the second pad is located on the chip; Alternatively, the first bonding pad and the second bonding pad are both located on the same chip; Alternatively, the first bonding pad and the second bonding pad are respectively located on different chips.

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