Preparation method of organic polarized photoelectric detector
By preparing organic polarization photodetectors through confined processing methods, the performance stability and crystal quality problems of traditional detectors are solved, and high-performance polarization photodetectors are realized, which are suitable for complex outdoor environments.
Patent Information
- Application Number
- CN202510842511.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-23
- Publication Date
- 2025-09-23
Smart Images
Figure CN120693041A_ABST
Abstract
Description
Technical Field
[0001] The embodiments of the present invention relate to the technical field of photoelectric detection preparation, and in particular to a method for preparing an organic polarization photoelectric detector. Background Art
[0002] Organic polarization photodetectors, as a new type of optoelectronic device, have made significant progress in recent years in material research and device performance optimization. Within the field of organic polarization materials research, organic chiral small molecules continue to emerge. In particular, BPTI-SSR, a derivative of PDI, introduces an additional chiral center, thereby enhancing the response to chiral signals and laying the foundation for improved performance in organic polarization photodetectors. These materials, due to their unique molecular structure and aggregation properties, exhibit excellent polarization light response.
[0003] Conventional polarization photodetector technology has numerous limitations, as it typically consists of spatially separated polarization elements and non-polarization-sensitive photodiodes or charge-coupled device image sensors. For one thing, the performance stability of organic polarization photodetectors needs to be further improved, limiting their long-term reliable application in complex outdoor environments. Furthermore, the poor quality of organic chiral semiconductor crystals prepared using conventional processing methods results in poor polarization performance. Summary of the Invention
[0004] In order to solve the problems in the prior art, the present invention provides a method for preparing an organic polarization photodetector. This method adopts a patterned method of confined processing, which can achieve directional mass transfer, nucleation and growth. The organic chiral semiconductor crystals grown by the previous processing method are more uniformly oriented, thereby improving the performance of the organic polarization photodetector.
[0005] An embodiment of the present invention provides a method for preparing an organic polarization photodetector, comprising: S1. preparing the gate and dielectric layer of the organic polarization photodetector; S2, processing the array silicon pillar template by photolithography and etching; S3, evaporating metal to prepare electrodes; S4. Add the organic chiral semiconductor solution dropwise onto the array silicon pillar template, cover it with electrodes and clamp it with a dovetail clip to prepare an organic polarization photodetector.
[0006] Optionally, the S2 specifically includes: The N-type doped single crystal silicon wafer is subjected to photolithography and etching to produce an array silicon pillar template.
[0007] Optionally, the silicon pillars in the array silicon pillar template have a width of 2-5 μm, a spacing of 5-10 μm, and a height of 12-18 μm.
[0008] Optionally, the S3 specifically includes: Electrodes are prepared by first evaporating titanium using electron beam evaporation equipment and then evaporating gold on its basis.
[0009] Optionally, the thickness of titanium is 5-15 nm and the thickness of gold is 45-55 nm.
[0010] Optionally, the S4 specifically includes: using a pipette to draw an organic chiral semiconductor solution and dripping it onto the array silicon pillar template; The solute of the organic chiral semiconductor solution is SSR-BPTI, and the solvent is chloroform or toluene.
[0011] Optionally, the volume of the organic chiral semiconductor solution sucked by the pipette is 5-15 μL, and the concentration of the solvent is 1-10 mg / ml.
[0012] Optionally, the method further includes: The prepared organic polarization photodetector was tested: two probes were inserted into the source and drain of the organic polarization photodetector respectively, the gate of the organic polarization photodetector was connected to the back electrode of the sample holder of the probe station, a voltage of -20V to 60V was applied to the gate, and the bias voltage VDS = 60V.
[0013] The present invention has the following beneficial effects: The preparation method can grow organic chiral semiconductor single crystal arrays on silicon wafers, enabling the fabrication of high-performance polarization photodetectors. The organic polarization photodetectors fabricated using this method achieved a maximum photoresponsivity of 0.16 A / W and a maximum absorption asymmetry factor of 0.061. Furthermore, the device confinement processing technology is simple and low-cost. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 A structural diagram of an organic polarization photodetector provided by an embodiment of the present invention; Figure 2 A flow chart of a method for preparing an organic polarization photodetector provided in this embodiment; Figure 3 This is the SEM image of the array silicon pillar template; Figure 4 This is the mechanism diagram of dewetting confined area processing; Figure 5 This is the electrode diagram obtained by evaporation; Figure 6 The molecular structure diagram of the organic chiral semiconductor SSR-BPTI; Figure 7 is the absorption asymmetry factor diagram of the organic chiral semiconductor SSR-BPTI; Figure 8 This is a long-line diagram of the organic chiral semiconductor SSR-BPTI electrode; Figure 9 This is the IT curve of the organic polarization photodetector; Figure 10 This is the polarization curve of the organic chiral semiconductor SSR-BPTI polarization photodetector. DETAILED DESCRIPTION
[0015] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures. Example
[0016] Figure 1 This diagram shows the structure of an organic polarization photodetector according to an embodiment of the present invention. The detector comprises a gate 1, a dielectric layer 2 on the gate, a single crystal array 4 on the dielectric layer, and a source 3 and drain 5 on the single crystal array. The gate is heavily p-type doped Si, the dielectric layer is 300 nm SiO2, and the single crystal array is a BPTI-SSR single crystal array of an organic chiral semiconductor.
[0017] Continue to see Figure 2 The present invention provides a method for preparing an organic polarization photodetector, which specifically includes: S1. Prepare the gate and dielectric layer of the organic polarization photodetector.
[0018] S2. Processing an array silicon pillar template through photolithography and etching.
[0019] Specifically, the above S2 includes the following steps: A four-inch N-type doped single-crystal silicon wafer with exposed single-sided polished crystal surface is photolithographically and etched to produce an array silicon pillar template with a width of 2-5μm, a spacing of 5-10μm, and a height of 12-18μm.
[0020] See also Figure 3 , Figure 3 This is the SEM image of the array silicon pillar template, which is a characterization of the morphology of the array silicon pillar template processed by photolithography and etching.
[0021] See further Figure 4 , Figure 4 This is the mechanism diagram of dewetting confined area processing, from which the assembly process of confined area processing can be seen.
[0022] S3. Prepare electrodes by evaporating metal.
[0023] In this embodiment, an electron beam evaporation device is used to first evaporate 5-15 nm Ti and then evaporate 45-55 nm Au on the basis of the evaporation to prepare an electrode.
[0024] The electrodes deposited in this embodiment are shown in FIG. Figure 5 .
[0025] S4. Add the organic chiral semiconductor solution dropwise onto the array silicon pillar template, cover it with electrodes and clamp both sides of the electrodes with dovetail clips to prepare an organic polarization photodetector.
[0026] In this embodiment, 10-15 μL of organic chiral semiconductor solution was pipetted and dropped onto the array silicon pillar template, and then electrodes were covered and clamped on both sides of the electrodes with dovetail clips to prepare an organic polarization photodetector.
[0027] The solute of the organic chiral semiconductor solution is SSR-BPTI, the solvent is chloroform or toluene, and the concentration is 1-10 mg / ml.
[0028] Figure 6 This is the molecular structure diagram of the organic chiral semiconductor SSR-BPTI. The basic molecular structure of the organic chiral semiconductor material can be seen from the diagram. Figure 7 This is the absorption asymmetry factor diagram of the organic chiral semiconductor SSR-BPTI. From the figure, we can see the difference in the absorption ability of organic chiral semiconductor molecules for left-handed and right-handed circularly polarized light. Figure 8 This is a long-line diagram of the electrode of the organic chiral semiconductor SSR-BPTI.
[0029] S5. Test the prepared organic polarization photodetector: insert two probes into the source and drain of the organic polarization photodetector respectively, connect the gate of the organic polarization photodetector to the back electrode of the sample holder of the probe station, apply a voltage of -20V to 60V to the gate, and the bias voltage VDS = 60V.
[0030] Figure 9 is the IT curve of organic polarization photodetector, Figure 9 It can be seen that the photoresponsivity of the device is 0.16A / W, which is consistent with the magnitude achieved by other current methods.
[0031] Figure 10 is the polarization curve of the organic chiral semiconductor SSR-BPTI polarization photodetector, Figure 10 It can be seen that the current asymmetry factor of the device is 0.061, which is consistent with the magnitude of other current methods.
[0032] The preparation method of the present invention enables the growth of organic chiral semiconductor single crystal arrays on silicon wafers, thereby fabricating high-performance polarization photodetectors. As shown in the figure, through optimization, the device achieves a maximum photoresponsivity of 0.16 A / W and a maximum absorption asymmetry factor of 0.061, demonstrating the excellent performance of the photodetector produced using this method.
[0033] Note that the above are only preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments and may include many other equivalent embodiments without departing from the concept of the present invention. The scope of the present invention is determined by the scope of the appended claims.
Claims
1. A method for preparing an organic polarization photodetector, characterized in that: include: S1. preparing the gate and dielectric layer of the organic polarization photodetector; S2, processing the array silicon pillar template by photolithography and etching; S3, evaporating metal to prepare electrodes; S4. Add the organic chiral semiconductor solution dropwise onto the array silicon pillar template, cover it with electrodes and clamp it with a dovetail clip to prepare an organic polarization photodetector.
2. The method according to claim 1, characterized in that The S2 specifically includes: The N-type doped single crystal silicon wafer is subjected to photolithography and etching to produce an array silicon pillar template.
3. The method according to claim 2, characterized in that The silicon pillars in the array silicon pillar template have a width of 2-5 μm, a spacing of 5-10 μm, and a height of 12-18 μm.
4. The method according to claim 1, wherein The S3 specifically includes: Electrodes are prepared by first evaporating titanium using electron beam evaporation equipment and then evaporating gold on its basis.
5. The method according to claim 4, characterized in that The thickness of titanium is 5-15 nm and that of gold is 45-55 nm.
6. The method according to claim 1, wherein The solute of the organic chiral semiconductor solution is SSR-BPTI, and the solvent is chloroform or toluene; Use a pipette to draw up the organic chiral semiconductor solution and drop it onto the array silicon pillar template.
7. The method according to claim 6, characterized in that The volume of the organic chiral semiconductor solution sucked by the pipette is 5-15 μL, and the concentration of the solvent is 1-10 mg / ml.
8. The method according to claim 1, characterized in that The method also includes: The prepared organic polarization photodetector was tested: two probes were inserted into the source and drain of the organic polarization photodetector respectively, the gate of the organic polarization photodetector was connected to the back electrode of the sample holder of the probe station, a voltage of -20V to 60V was applied to the gate, and a bias voltage of VDS = 60V was applied.