High-conductivity graphene / copper alloy material prepared based on codeposition method and preparation method of high-conductivity graphene / copper alloy material

Abstract

The invention relates to a high-conductivity graphene / copper alloy material prepared on the basis of a codeposition method and a preparation method thereof, copper and a gaseous carbon source are used as raw materials, a copper steam cluster is obtained through a thermal evaporation method, graphene grows on the surface of the copper steam cluster, and the high-conductivity graphene / copper alloy material is obtained. The conductivity of the graphene / copper alloy material prepared through the codeposition method reaches up to 110.3% IACS, and the problem that the content of graphene in a high-conductivity copper-graphene composite material is low is solved.

Description

Technical Field

[0001] The present invention belongs to the field of conductive materials, and in particular relates to a highly conductive graphene / copper alloy material prepared based on a co-deposition method and a preparation method thereof. Background Art

[0002] The development of highly conductive copper materials is of great significance for improving energy efficiency, promoting the advancement of materials science, expanding industrial applications, promoting technological innovation, and maintaining national security.

[0003] Recent studies have shown that the structure and distribution of graphene within a metal matrix significantly impact the material's electrical conductivity. Copper has a high carrier concentration, while graphene (Gr) has a high carrier mobility. Combining copper and graphene can improve the electrical conductivity of copper-based composites. Currently, methods for preparing graphene-copper composites primarily include powder metallurgy, molecular-level mixing, electrochemical deposition, and chemical vapor deposition, which combine graphene and copper and then form a bulk material using vacuum hot pressing or spark plasma sintering. However, these methods may suffer from poor interfacial bonding between graphene and copper, increasing interfacial resistance and offsetting the conductivity gain; and graphene easily agglomerates, resulting in localized uneven conductivity that affects the electrical conductivity of the graphene-copper composite. Therefore, it is necessary to develop a method for preparing graphene-copper composites that allows for good bonding between graphene and the copper matrix and allows for controllable graphene content. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a highly conductive graphene / copper alloy material prepared by a co-deposition method and a preparation method thereof, so as to form a three-dimensional distribution structure of graphene-copper, thereby improving the conductive properties of the copper matrix material.

[0005] The present invention provides a highly conductive graphene / copper alloy material prepared based on a co-deposition method. Copper and a gaseous carbon source are used as raw materials. By thermal evaporation, copper vapor clusters are obtained while graphene is grown on the surface of the copper vapor clusters, thereby obtaining a highly conductive graphene / copper alloy material.

[0006] Preferably, the method of growing graphene includes but is not limited to chemical vapor deposition.

[0007] The present invention also provides a method for preparing a highly conductive graphene / copper alloy material based on a co-deposition method, comprising the following steps:

[0008] S1. Place the insulating substrate on a thermal evaporation coating device, heat the insulating substrate to a set temperature and maintain it;

[0009] S2. Turn on the thermal evaporation source to deposit copper on the surface of the insulating substrate;

[0010] S3. While performing step S2, a gaseous carbon source is introduced into the thermal evaporation chamber and the gas pressure is maintained to deposit graphene on the copper surface, thereby finally obtaining a graphene / copper alloy material.

[0011] Preferably, the insulating substrate in step S1 includes but is not limited to sapphire (0001).

[0012] Preferably, the set temperature in step S1 is 900-1050°C.

[0013] Preferably, the copper deposition rate in step S2 is 0.1-100 nm / s.

[0014] Preferably, the copper deposition time in step S2 is 10 to 120 minutes.

[0015] Preferably, the gaseous carbon source in step S3 includes one or more of methane, ethylene, and acetylene.

[0016] Preferably, the air pressure in the thermal evaporation chamber in step S3 is 10-100 Pa.

[0017] Beneficial effects

[0018] (1) In the method of the present invention, copper and carbon atoms are deposited simultaneously, so that graphene grows directly on the surface of copper particles. Compared with the traditional method of growing a layer of atomic layer thick graphene on the surface of a very thick copper foil, resulting in a very low graphene content, the present invention utilizes a co-deposition method to prepare a graphene / copper composite material, which can significantly increase the graphene content in the copper-based material.

[0019] (2) In the present invention, in-situ grown graphene is used to form chemical bonds with copper particles, thereby reducing interface resistance and thereby improving conductivity.

[0020] (3) The electrical conductivity of the graphene / copper alloy material prepared by the co-deposition method in the present invention is as high as 110.3% IACS. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of preparing highly conductive graphene / copper alloy material based on co-deposition method in Example 1 of the present invention.

[0022] Figure 2 This is a macroscopic image of the highly conductive graphene / copper alloy material prepared by the co-deposition method in Example 1 of the present invention. DETAILED DESCRIPTION

[0023] Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiments are only used to illustrate the present invention and are not used in limiting the scope of the present invention.In addition, should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall equally within the scope limited by the appended claims of the application.

[0024] Example 1

[0025] The schematic diagram of preparing highly conductive graphene / copper alloy material based on co-deposition method in this embodiment is shown in FIG. Figure 1 As shown, it includes the following steps:

[0026] S1. Place a clean sapphire (0001) substrate on the substrate holder of the thermal evaporation coating device, and use the substrate holder heating system to heat the sapphire substrate to 1000℃ and maintain it; turn on the thermal evaporation source to begin depositing copper on the insulating substrate at a deposition rate of 50nm / s; at the same time, introduce 10sccm of high-purity methane into the thermal evaporation chamber, and use a pressure control device to maintain the pressure in the chamber at 50Pa. Graphene and metal will begin to be co-deposited on the sapphire substrate. After 20 minutes of deposition, turn off the thermal evaporation source and methane, and naturally cool to room temperature in a vacuum environment to finally obtain a highly conductive graphene / copper alloy material, as shown in the macroscopic diagram. Figure 2 As shown, the surface of the material is flat and smooth.

[0027] Example 2

[0028] The steps for preparing the highly conductive graphene / copper alloy material based on the co-deposition method in this embodiment are the same as those in Example 1, except that the heating temperature of the sapphire substrate is 950°C.

[0029] Example 3

[0030] The steps for preparing the highly conductive graphene / copper alloy material based on the co-deposition method in this embodiment are the same as those in Example 1, except that the heating temperature of the sapphire substrate is 1050°C.

[0031] The electrical conductivity of the highly conductive graphene / copper alloy materials prepared in Examples 1-3 was determined using a four-probe method and a step profiler. The results are shown in Table 1. As the substrate heating temperature increases, the deposited copper metal becomes denser, and increased temperature also promotes graphene growth. Therefore, compared to Example 1, the conductivity of the graphene / copper alloy material in Example 3 is improved. The conductivity of the graphene / copper alloy material prepared by the co-deposition method of the present invention can reach 110.3% IACS.

[0032] Table 1 Conductivity of high conductive graphene / copper alloy materials prepared in Examples 1 to 3

[0033] Example 1 2 3 Electrical conductivity (% IACS) 105.2 103.2 110.3

Claims

1. A highly conductive graphene / copper alloy material prepared by co-deposition method, characterized in that: Using copper and gaseous carbon source as raw materials, copper vapor clusters are obtained by thermal evaporation, and graphene is grown on the surface of the copper vapor clusters, thereby obtaining a highly conductive graphene / copper alloy material.

2. A method for preparing a highly conductive graphene / copper alloy material based on a co-deposition method, comprising the following steps: S1. The insulating substrate is placed on a thermal evaporation coating device, and the insulating substrate is heated to a set temperature and maintained; S2. Turn on the thermal evaporation source to deposit copper on the surface of the insulating substrate; S3. While performing step S2, a gaseous carbon source is introduced into the thermal evaporation chamber and the gas pressure is maintained to deposit graphene on the copper surface, thereby finally obtaining a graphene / copper alloy material.

3. The method for preparing a highly conductive graphene / copper alloy material based on co-deposition according to claim 2, characterized in that: In step S1, the insulating substrate includes sapphire.

4. The method for preparing a highly conductive graphene / copper alloy material based on co-deposition according to claim 2, wherein: The set temperature in step S1 is 900-1050°C.

5. The method for preparing a highly conductive graphene / copper alloy material based on co-deposition according to claim 2, wherein: The copper deposition rate in step S2 is 0.1-100 nm / s.

6. The method for preparing a highly conductive graphene / copper alloy material based on co-deposition according to claim 2, wherein: The copper deposition time in step S2 is 10 to 120 minutes.

7. The method for preparing a highly conductive graphene / copper alloy material based on co-deposition according to claim 2, wherein: The gaseous carbon source in step S3 includes one or more of methane, ethylene, and acetylene.

8. The method for preparing a highly conductive graphene / copper alloy material based on co-deposition according to claim 2, wherein: In step S3, the air pressure in the thermal evaporation chamber is 10-100 Pa.

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