Layout graph correction method and device, computer equipment and layout graph structure

Abstract

The invention relates to a layout graph correction method and device, computer equipment and a layout graph structure. The layout graph correction method comprises the steps that a first target graph is obtained with the key size of a target hole as the diameter, and the circle center of the first target graph coincides with the center of the target hole; setting a plurality of straight lines passing through the circle center of the first target graph, wherein the intersection points of the plurality of straight lines and the first target graph are first evaluation points; setting a rectangular graph at each first evaluation point, wherein the target edge of the rectangular graph is tangent to the first target graph at the first evaluation point; obtaining a second target graph according to the plurality of rectangular graphs; performing simulation exposure based on the second target graph to obtain an exposure graph; obtaining the roundness of the exposure pattern; and adjusting the size of the rectangular graph according to the roundness to obtain a corrected layout graph. According to the correction method, the shape of the through hole formed on the basis of the corrected layout graph can be improved, and the problem that the registration risk is likely to occur between the through hole and the front-layer structure is solved.

Description

Technical Field

[0001] The present application relates to the field of layout design technology, and in particular to a method, device, computer equipment and layout graphic structure for correcting layout graphics. Background Art

[0002] With the advancement of semiconductor technology, optical proximity correction (OPC) is often required before creating a mask based on a layout. Afterward, lithography rule checking (LRC) is required to check if the layout still meets the preset specifications after OPC correction. Specifically, LRC checks primarily verify that the critical dimensions of the layout along the X and Y directions meet the requirements.

[0003] In reality, the shape of the vias formed by exposing a mask based on the layout pattern is affected by the surrounding environment, and the shape of the vias cannot be accurately reflected by the critical dimensions. This is because even if the critical dimensions of the vias in the X and Y directions meet the requirements, their shape is not necessarily circular, but may be elliptical. This can lead to registration risks between the vias in the current layer and the previous layer structure, and a loose connection between the vias in the current layer and the previous layer structure can affect product performance. Summary of the Invention

[0004] Based on this, it is necessary to provide a method, device, computer equipment and layout graphic structure for correcting the above-mentioned problems.

[0005] In a first aspect, the present application provides a method for correcting a layout graphic, comprising:

[0006] Taking the critical dimension of the target hole as the diameter, a first target pattern is obtained, wherein the center of the first target pattern coincides with the center of the target hole;

[0007] Setting a plurality of straight lines passing through the center of the first target figure, wherein intersections of the plurality of straight lines and the first target figure are first evaluation points;

[0008] Setting a rectangular figure at each of the first evaluation points, wherein a target side of the rectangular figure is tangent to the first target figure at the first evaluation point;

[0009] Obtain a second target graphic according to the plurality of rectangular graphics;

[0010] performing simulated exposure based on the second target pattern to obtain an exposure pattern;

[0011] Obtaining the roundness of the exposure pattern;

[0012] The size of the rectangular pattern is adjusted according to the true roundness to obtain a corrected layout pattern.

[0013] In one embodiment, obtaining the roundness of the exposure pattern includes:

[0014] Obtaining a light intensity distribution curve of the exposure pattern in each of the straight line directions;

[0015] Determining a simulated exposure size of the exposure pattern in each of the straight line directions according to the light intensity distribution curve and the imaging threshold;

[0016] The roundness of the exposure pattern is determined according to a minimum critical dimension and a maximum critical dimension among the plurality of simulated exposure dimensions.

[0017] In one embodiment, adjusting the size of the rectangular shape according to the true roundness to obtain a corrected second target shape includes:

[0018] When the true roundness is greater than a preset value, the size of the rectangular figure located in the target straight line direction is adjusted until the true roundness is less than or equal to the preset value, thereby obtaining a corrected second target figure; wherein the target straight line direction is the direction of the straight line corresponding to the minimum critical dimension or the maximum critical dimension.

[0019] In one embodiment, when the true roundness is greater than a preset value, adjusting the size of the rectangular figure located in the direction of the target straight line includes:

[0020] determining a second evaluation point on the exposure pattern, where the second evaluation point is an intersection of the plurality of straight lines and the exposure pattern;

[0021] The size of the rectangular figure is adjusted according to the positional relationship between the second evaluation point and the corresponding first evaluation point in the direction of the target straight line.

[0022] In one embodiment, before performing simulated exposure according to the second target pattern to obtain an exposure pattern, the method further includes:

[0023] Performing optical proximity correction processing on the second target pattern.

[0024] In one embodiment, the number of the straight lines is greater than or equal to 3.

[0025] In one embodiment, the initial sizes of the plurality of rectangular graphics are the same.

[0026] In a second aspect, the present application provides a device for correcting a layout pattern, comprising:

[0027] A target pattern acquisition module is configured to obtain a first target pattern using the critical dimension of the target hole as a diameter, wherein the center of the first target pattern coincides with the center of the target hole; set a plurality of straight lines passing through the center of the first target pattern, wherein the intersections of the plurality of straight lines with the first target pattern are first evaluation points; set a rectangular pattern at each of the first evaluation points, wherein the target side of the rectangular pattern is tangent to the first target pattern at the first evaluation point; and obtain a second target pattern based on the plurality of rectangular patterns;

[0028] a simulation exposure module, configured to perform simulation exposure according to the second target pattern to obtain an exposure pattern;

[0029] a true roundness acquisition module, configured to acquire the true roundness of the exposure pattern;

[0030] The correction module is used to adjust the size of the rectangular figure according to the true roundness to obtain a corrected layout figure.

[0031] In a third aspect, the present application provides a computer device comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the method provided in any of the above embodiments when executing the computer program.

[0032] In a fourth aspect, the present application provides a layout graphic structure, including a layout graphic obtained by the layout graphic correction method provided in any of the above embodiments.

[0033] The unexpected effect of the present application is as follows: by using the critical dimension of the target hole as the diameter, a first target pattern is obtained whose center coincides with the center of the target hole; multiple straight lines are set through the center of the first target pattern, and the intersections of the multiple straight lines with the first target pattern are first evaluation points. A rectangular pattern is set at each first evaluation point, and the target side of the rectangular pattern is tangent to the first target pattern at the first evaluation point. A second target pattern is obtained based on the multiple rectangular patterns; further, simulated exposure is performed based on the second target pattern to obtain an exposure pattern, and the true roundness of the exposure pattern is obtained based on the size of the exposure pattern obtained from the second target pattern. The size of the rectangular pattern is adjusted based on the true roundness to obtain a corrected layout pattern. The second target pattern is set to a shape formed by a frame surrounded by multiple rectangles. In this way, when adjusting the second target pattern based on the true roundness of the exposure pattern, the local size of the second target pattern can be precisely adjusted by adjusting the size of the rectangular pattern, thereby improving the adjustment accuracy of the second target pattern, thereby improving the shape of the through hole formed based on the second target pattern, avoiding the risk of loose registration between the through hole and the front layer structure, and thus improving product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0035] Figure 1 A flowchart of a method for correcting a layout graphic provided in one embodiment;

[0036] Figure 2 is a schematic diagram of a first target graphic provided in one embodiment;

[0037] Figure 3 is a schematic diagram of a rectangular figure provided at a first evaluation point provided in one embodiment;

[0038] Figure 4 is a schematic diagram of a second target pattern provided in one embodiment;

[0039] Figure 5 Flowchart of obtaining the roundness of the exposure pattern in step S600 in one embodiment;

[0040] Figure 6 is a light intensity distribution curve in one embodiment;

[0041] Figure 7 is a schematic diagram of adjusting a rectangular graphic in one embodiment;

[0042] Figure 8 is a schematic diagram of a second target pattern after optical proximity correction processing is performed on the second target pattern in one embodiment;

[0043] Figure 9 Schematic diagram of the structure of a layout pattern correction device provided in one embodiment;

[0044] Figure 10 A diagram of the internal structure of a computer device provided in one embodiment. DETAILED DESCRIPTION

[0045] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0047] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include," "comprising," "having," and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and / or" includes any and all combinations of the relevant listed items.

[0048] As mentioned in the background, the LRC check after OPC primarily checks whether the critical dimensions of the layout pattern along the X and Y directions meet the requirements. However, even if the critical dimensions of the through-hole in the X and Y directions in the lithography imaging model obtained based on the corrected layout image meet the requirements, its shape may not be circular but may be elliptical. This can lead to registration risks between the through-hole in the current layer and the previous layer structure. If the connection between the through-hole in the current layer and the previous layer structure is not tight, it will affect the performance of the product.

[0049] Based on this, Figure 1 As shown, the present application proposes a method for correcting a layout pattern, including steps S100-S700.

[0050] S100 , taking the critical dimension of the target hole as the diameter, obtaining a first target pattern, wherein the center of the first target pattern coincides with the center of the target hole.

[0051] like Figure 2 As shown, the square figure 100 is a figure corresponding to the target hole on the initial layout figure, and the first target figure 200 is a circle, and the center of the circle coincides with the center of the square figure 100 and the center of the target hole.

[0052] S200: setting a plurality of straight lines passing through the center of a first target figure, wherein intersections of the plurality of straight lines and the first target figure are first evaluation points.

[0053] Wherein, the angles between adjacent straight lines are the same. For example, the number of straight lines is greater than or equal to 3.

[0054] For example, if the number of straight lines is 3, then the 3 straight lines and Figure 2 The included angles in the horizontal direction are 0 degrees, 60 degrees, and 120 degrees respectively, and the included angle between adjacent straight lines is 60 degrees; if the number of straight lines is 4, then the 4 straight lines and Figure 2 The included angles in the horizontal direction are 0 degrees, 45 degrees, 90 degrees, and 135 degrees, respectively. The included angle between adjacent straight lines is 45 degrees. Each straight line has two intersections with the first target figure, and the number of first evaluation points is twice the number of straight lines.

[0055] S300: Setting a rectangular figure at each first evaluation point, wherein a target side of the rectangular figure is tangent to the first target figure at the first evaluation point.

[0056] like Figure 3 As shown, taking four straight lines as an example, a rectangular figure 310 is set at each first evaluation point, and the number of rectangular figures 310 is the same as the number of first evaluation points. For example, a tangent line to the first target figure 200 can be drawn based on the first evaluation point, and the portion of the tangent line including the first evaluation point is intercepted as the target edge. Based on the target edge, the rectangular figure 310 is expanded into the first target figure 200. In the rectangular figure 310, the length of the side parallel to the line connecting the first evaluation point and the center of the circle is less than the radius of the first target figure 200. Regarding the determination of the width of the rectangular figure 310 (i.e., the length of the side perpendicular to the line connecting the first evaluation point and the center of the circle), since OPC cannot modify arcs of arbitrary angles, but is more user-friendly for horizontal, vertical, and 45-degree corrections, one vertex of adjacent rectangular figures 310 overlaps.

[0057] S400: Obtain a second target graphic according to a plurality of rectangular graphics.

[0058] like Figure 4 As shown, the vertices of adjacent rectangular figures are connected in sequence to obtain a second target figure 300.

[0059] S500 , performing simulated exposure based on the second target pattern to obtain an exposure pattern.

[0060] S600: Acquire the true roundness of the exposure pattern.

[0061] The true circularity of an exposure pattern indicates how close it is to a theoretical circle. This can be determined by measuring the radius or diameter of the exposure pattern from different directions.

[0062] S700: Adjust the size of the rectangular pattern according to the true circularity to obtain a corrected layout pattern.

[0063] The size of the rectangular pattern can be adjusted according to the true roundness of the exposure pattern, thereby adjusting the second target pattern so that the size and shape of the through hole obtained by exposure according to the adjusted second target pattern are closer to the target hole.

[0064] The initial layout pattern generally includes multiple square patterns. Each square pattern in the initial layout pattern can be modified according to steps S100-S400 to obtain multiple second target patterns. Furthermore, the shapes and sizes of the multiple second target patterns can be adjusted according to steps S500-S700. The adjusted multiple second target patterns constitute the modified layout pattern.

[0065] In this embodiment, by taking the critical size of the target hole as the diameter, a first target graphic 200 whose center coincides with the center of the target hole is obtained, a plurality of straight lines passing through the center of the first target graphic 200 are set, and the intersections of the plurality of straight lines and the first target graphic 200 are first evaluation points. A rectangular graphic 310 is set at each first evaluation point, and the target side of the rectangular graphic 310 is tangent to the first target graphic 200 at the first evaluation point. A second target graphic 300 is obtained based on the plurality of rectangular graphics 310. Furthermore, simulated exposure is performed based on the second target graphic 300 to obtain an exposure graphic. The true roundness of the exposure graphic is obtained based on the size of the exposure graphic obtained from the second target graphic, and the size of the rectangular graphic is adjusted based on the true roundness to obtain a corrected layout graphic. The second target pattern is set to a shape whose frame is formed by multiple rectangles. In this way, when adjusting the second target pattern according to the true roundness of the exposure pattern, the local shape of the second target pattern can be accurately adjusted by adjusting the size of the rectangular pattern (the length of the side parallel to the line connecting the first evaluation point and the center of the circle), thereby improving the adjustment accuracy of the second target pattern and further improving the shape of the through hole formed based on the second target pattern, avoiding the risk of loose registration between the through hole and the front layer structure, thereby improving product performance.

[0066] In one embodiment, Figure 5 As shown, the above step S600: obtaining the true roundness of the exposure pattern includes steps S610-S630.

[0067] S610, obtaining a light intensity distribution curve of the exposure pattern in each straight line direction.

[0068] like Figure 6 As shown, the light intensity distribution curve reflects the relationship between the light intensity and distance of the exposure pattern in a certain straight line direction. The light intensity distribution curve of the exposure pattern in each straight line direction can be obtained based on the optical model obtained from the second target pattern.

[0069] S620: Determine the simulated exposure size of the exposure pattern in each straight line direction according to the light intensity distribution curve and the imaging threshold.

[0070] When the light intensity exceeds the imaging threshold, an image can be formed on the wafer. Therefore, the distance of the portion of the light intensity distribution curve where the light intensity exceeds the imaging threshold can be used as the simulated exposure dimension in the direction of the straight line.

[0071] S630 , determining the roundness of the exposure pattern according to the minimum critical size and the maximum critical size among the multiple simulated exposure sizes.

[0072] Specifically, the true roundness of the exposure pattern can be calculated by the following formula:

[0073]

[0074] Where C represents the roundness, represents the minimum critical size among n simulated exposure sizes, In this embodiment, the smaller the true roundness is, the closer the shape of the exposure pattern is to a circle.

[0075] In this embodiment, by obtaining the light intensity distribution curve of the exposure pattern in each straight line direction, the simulated exposure size of the exposure pattern in each straight line direction is determined based on the light intensity distribution curve and the imaging threshold, and the true roundness of the exposure pattern is determined based on the minimum critical size and the maximum critical size among the multiple simulated exposure sizes. Therefore, it can be determined whether the shape of the second target pattern needs to be further adjusted based on the true roundness.

[0076] In one embodiment, the size of the rectangular figure is adjusted according to the true roundness to obtain a corrected layout figure, including: when the true roundness is greater than a preset value, the size of the rectangular figure located in the target straight line direction is adjusted until the true roundness is less than or equal to the preset value, thereby obtaining the corrected layout figure.

[0077] The preset value can be reasonably set according to the actual product specifications. The target straight line direction is the direction of the line corresponding to the minimum critical dimension or the maximum critical dimension.

[0078] Specifically, the second evaluation point on the exposure pattern can be determined first. The second evaluation point is the intersection of multiple straight lines and the exposure pattern. Then, the size of the rectangular pattern can be adjusted according to the positional relationship between the second evaluation point and the corresponding first evaluation point in the target straight line direction. Figure 7 As shown, taking 4 straight lines as an example, Figure 7 The solid line represents the second target pattern, the long dashed line represents the exposure pattern, and the short dashed line represents the resized rectangular pattern. OX is the direction of line X corresponding to the minimum critical dimension. The first evaluation points on line X are points A and B, and the corresponding second evaluation points are points C and D. On line X, point C is closer to the center of the circle than point A. Therefore, the size of the rectangular pattern corresponding to point A needs to be increased (e.g., Figure 7(shown by the short dashed line). For example, the length of the target side of the rectangular figure corresponding to point A can be increased. On line X, points B and D coincide, so the size of the rectangular figure corresponding to point B does not need to be adjusted. Furthermore, simulated exposure is performed again on the adjusted second target pattern to obtain a new exposure pattern, and the true roundness of the new exposure pattern is calculated. If the true roundness of the new exposure pattern is still greater than the preset value, the above steps are repeated until the true roundness of the exposure pattern is less than or equal to the preset value.

[0079] In this embodiment, when adjusting the size of a rectangular figure, if the length of the target side is increased, the width of the side perpendicular to the target side in the rectangular figure will decrease; if the length of the target side is decreased, the width of the side perpendicular to the target side in the rectangular figure will increase.

[0080] In addition, it should be noted that the target straight line direction is not fixed. Since the exposure pattern obtained by re-simulating exposure after adjusting the shape of the second target pattern may be different, it is necessary to redefine the target straight line direction based on the minimum critical size or maximum critical size of the new exposure pattern. Accordingly, the position of the second evaluation point also needs to be redetermined.

[0081] In this embodiment, by continuously adjusting the size of the rectangular pattern according to the true circularity of the simulated pattern and changing the shape of the second target pattern, the true circularity of the through-hole obtained based on the second target pattern is very small and very close to the ideal circle. For example, for the logic area structure, the traditional method is used to perform optical proximity correction on only the square pattern to obtain a corrected layout pattern. The true circularity of the through-hole obtained based on the layout pattern is about 8%, while the true circularity of the through-hole obtained based on the second target pattern corrected by the present application is about 3%. For the storage area structure, the true circularity of the through-hole obtained based on the traditional layout pattern is about 12%, while the true circularity of the through-hole obtained based on the second target pattern corrected by the present application is about 3.6%. It can be understood that using the layout pattern correction method of the present application to correct the layout pattern significantly improves the true circularity of the layout pattern obtained by exposure, thereby improving the problem of easy registration risk of the through-hole and the previous layer structure, improving the connection tightness between the through-hole and the previous layer structure, and improving product performance.

[0082] In one embodiment, before performing simulated exposure according to the second target pattern to obtain the exposure pattern, the layout pattern correction method further includes: S800, performing optical proximity correction processing on the second target pattern.

[0083] Taking the number of straight lines as an example, after performing optical proximity correction on the second target pattern, the resulting pattern is as follows: Figure 8 shown.

[0084] It should be noted that after the shape of the second target pattern is subsequently adjusted according to the true roundness, the adjusted second target pattern needs to be subjected to simulated exposure before obtaining a new exposure pattern. The optical proximity correction process needs to be performed on the adjusted second target pattern again.

[0085] In one embodiment, the initial sizes of the plurality of rectangular graphics are the same.

[0086] It should be understood that, although the steps in the above-mentioned flowcharts are shown in the order shown in the diagrams, these steps are not necessarily performed in the order shown in the diagrams. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be performed in other orders. Moreover, at least a portion of the steps in each flowchart may include multiple steps or multiple stages, and these steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily to be performed in sequence, but can be performed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0087] Based on the same inventive concept, embodiments of the present application also provide a layout pattern correction device for implementing the layout pattern correction method described above. The solution provided by this device is similar to the solution described in the above method. Therefore, the specific limitations of one or more layout pattern correction device embodiments provided below can be found in the limitations of the layout pattern correction method described above and will not be repeated here.

[0088] In an exemplary embodiment, Figure 9 As shown, a layout pattern correction device is provided, comprising: a target pattern acquisition module 910, a simulated exposure module 920, a true roundness acquisition module 930 and a correction module 940, wherein:

[0089] The target graphic acquisition module 910 is used to obtain a first target graphic with the critical size of the target hole as the diameter, and the center of the first target graphic coincides with the center of the target hole; set multiple straight lines passing through the center of the first target graphic, and the intersection of the multiple straight lines and the first target graphic is the first evaluation point; set a rectangular graphic at each first evaluation point, and the target side of the rectangular graphic is tangent to the first target graphic at the first evaluation point; and obtain the second target graphic based on the multiple rectangular graphics.

[0090] The simulated exposure module 920 is used to perform simulated exposure according to the second target pattern to obtain an exposure pattern.

[0091] The roundness acquisition module 930 is used to acquire the roundness of the exposure pattern.

[0092] The correction module 940 is used to adjust the size of the rectangular pattern according to the true roundness to obtain a corrected layout pattern.

[0093] Each module in the aforementioned layout graphic correction device can be implemented in whole or in part through software, hardware, or a combination thereof. Each module can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in the computer device in the form of software, so that the processor can call and execute the corresponding operations of each module.

[0094] In an exemplary embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as shown in FIG. Figure 10 As shown. The computer device includes a processor, memory, an input / output interface, a communication interface, a display unit, and an input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are connected to the system bus via the input / output interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with external terminals via wired or wireless means, and the wireless means can be implemented via Wi-Fi, a mobile cellular network, near-field communication (NFC), or other technologies. When executed by the processor, the computer program implements a method for correcting layout graphics. The display unit of the computer device is used to form a visually visible image, and can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device casing, or an external keyboard, touchpad or mouse.

[0095] Those skilled in the art will understand that Figure 10 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0096] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0097] Taking the critical dimension of the target hole as the diameter, a first target pattern is obtained, wherein the center of the first target pattern coincides with the center of the target hole;

[0098] Setting a plurality of straight lines passing through the center of the first target figure, wherein the intersection of the plurality of straight lines and the first target figure is a first evaluation point;

[0099] Setting a rectangular figure at each first evaluation point, wherein the target side of the rectangular figure is tangent to the first target figure at the first evaluation point;

[0100] Obtain a second target graphic according to the plurality of rectangular graphics;

[0101] Performing simulated exposure based on the second target pattern to obtain an exposure pattern;

[0102] Get the true roundness of the exposure pattern;

[0103] The size of the rectangular figure is adjusted according to the true circularity to obtain the corrected layout figure.

[0104] In one embodiment, the present application further provides a layout pattern structure, including a layout pattern obtained according to the layout pattern correction method provided in any of the above embodiments. Each square pattern on the initial layout pattern can be corrected using the layout pattern correction method provided in any of the above embodiments to obtain multiple second target patterns, which constitute the layout pattern structure.

[0105] The unexpected effect of the present application is: by taking the critical size of the target hole as the diameter, a first target graphic 200 whose center coincides with the center of the target hole is obtained, a plurality of straight lines passing through the center of the first target graphic 200 are set, and the intersections of the plurality of straight lines and the first target graphic 200 are first evaluation points, a rectangular graphic 310 is set at each first evaluation point, and the target side of the rectangular graphic 310 is tangent to the first target graphic 200 at the first evaluation point, and a second target graphic 300 is obtained based on the plurality of rectangular graphics 310; further, simulated exposure is performed based on the second target graphic 300 to obtain an exposure graphic, and the true roundness of the exposure graphic is obtained based on the size of the exposure graphic obtained from the second target graphic, and the size of the rectangular graphic is adjusted according to the true roundness to obtain a corrected layout graphic. The second target graphic is set to a shape formed by a frame surrounded by multiple rectangles. In this way, when adjusting the second target graphic according to the true roundness of the exposure graphic, the local shape of the second target graphic can be accurately adjusted by adjusting the size of the rectangular graphic, thereby improving the adjustment accuracy of the second target graphic, and further improving the shape of the through hole formed based on the second target graphic, improving the problem of easy registration risk between the through hole and the front layer structure, improving the connection tightness between the through hole and the front layer structure, and improving product performance.

[0106] Throughout this specification, references to terms such as "some embodiments," "other embodiments," and "desired embodiments" indicate that a particular feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. Although these terms are used interchangeably throughout this specification, they do not necessarily refer to the same embodiment or example.

[0107] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0108] The above embodiments merely illustrate several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A method for correcting a layout pattern, characterized in that: include: Taking the critical dimension of the target hole as the diameter, a first target pattern is obtained, wherein the center of the first target pattern coincides with the center of the target hole; Setting a plurality of straight lines passing through the center of the first target figure, wherein intersections of the plurality of straight lines and the first target figure are first evaluation points; Setting a rectangular figure at each of the first evaluation points, wherein a target side of the rectangular figure is tangent to the first target figure at the first evaluation point; Obtain a second target graphic according to the plurality of rectangular graphics; performing simulated exposure based on the second target pattern to obtain an exposure pattern; Obtaining the roundness of the exposure pattern; The size of the rectangular pattern is adjusted according to the true roundness to obtain a corrected layout pattern.

2. The method according to claim 1, characterized in that The obtaining of the true roundness of the exposure pattern comprises: Obtaining a light intensity distribution curve of the exposure pattern in each of the straight line directions; Determining a simulated exposure size of the exposure pattern in each of the straight line directions according to the light intensity distribution curve and the imaging threshold; The roundness of the exposure pattern is determined according to a minimum critical dimension and a maximum critical dimension among the plurality of simulated exposure dimensions.

3. The method according to claim 2, characterized in that The step of adjusting the size of the rectangular pattern according to the true roundness to obtain a corrected layout pattern includes: When the true roundness is greater than a preset value, the size of the rectangular figure located in the target straight line direction is adjusted until the true roundness is less than or equal to the preset value, thereby obtaining a corrected layout figure; wherein the target straight line direction is the direction of the straight line corresponding to the minimum critical dimension or the maximum critical dimension.

4. The method according to claim 3, characterized in that When the true roundness is greater than a preset value, adjusting the size of the rectangular figure located in the direction of the target straight line includes: determining a second evaluation point on the exposure pattern, where the second evaluation point is an intersection of the plurality of straight lines and the exposure pattern; The size of the rectangular figure is adjusted according to the positional relationship between the second evaluation point and the corresponding first evaluation point in the direction of the target straight line.

5. The method according to claim 1, wherein Before performing simulated exposure according to the second target pattern to obtain an exposure pattern, the method further includes: Performing optical proximity correction processing on the second target pattern.

6. The method according to claim 1, characterized in that The number of the straight lines is greater than or equal to 3.

7. The method according to claim 1, characterized in that The initial sizes of the plurality of rectangular graphics are the same.

8. A layout pattern correction device, characterized in that: include: A target pattern acquisition module is configured to obtain a first target pattern using the critical dimension of the target hole as a diameter, wherein the center of the first target pattern coincides with the center of the target hole; set a plurality of straight lines passing through the center of the first target pattern, wherein the intersections of the plurality of straight lines with the first target pattern are first evaluation points; set a rectangular pattern at each of the first evaluation points, wherein the target side of the rectangular pattern is tangent to the first target pattern at the first evaluation point; and obtain a second target pattern based on the plurality of rectangular patterns; a simulation exposure module, configured to perform simulation exposure according to the second target pattern to obtain an exposure pattern; a true roundness acquisition module, configured to acquire the true roundness of the exposure pattern; The correction module is used to adjust the size of the rectangular figure according to the true roundness to obtain a corrected layout figure.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A layout graphic structure, characterized in that: Including a layout pattern obtained according to the layout pattern correction method according to any one of claims 1-7.

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