Stage offset measurement method, device, equipment and medium

Abstract

The present disclosure relates to a machine table offset measurement method, device, equipment and medium. The method comprises obtaining a monitoring period and a target control sheet, the target control sheet comprising at least one target alignment mark; controlling the machine table to be measured to measure the offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time sequence comprising the offset measurement value and the measurement time thereof; determining the machine table optimal compensation value time sequence of the workpiece on the machine table to be measured according to the offset measurement value time sequence, the machine table optimal compensation value time sequence comprising the optimal compensation value corresponding to the offset measurement value and the corresponding measurement time; and obtaining the optimal target compensation value of the workpiece at the target time according to the machine table optimal compensation value time sequence. At least the adverse effects of machine table errors on subsequent process can be avoided, the performance of the machine table can be improved, and the electrical performance and yield of the semiconductor product can be improved.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor manufacturing, and particularly relates to a machine table offset measurement method and device, equipment and medium. BACKGROUND

[0002] In the manufacturing process of semiconductor chip products, chip photolithography technology, as a core technology of semiconductor manufacturing technology, is the driving force for the development of integrated circuit (IC) manufacturing technology.

[0003] For photolithography process, the environment, service period, service life, and precision and yield of the machine table, and other parameters will affect the electrical performance and yield of the product.

[0004] In the related art, error data is checked by artificial inspection, and the machine table is calibrated based on the error data. On the one hand, the experience and ability of the worker are highly dependent; on the other hand, artificial calibration cannot timely change the adverse effects of system errors of the machine table during operation on subsequent process. SUMMARY

[0005] Therefore, it is necessary to provide a machine table offset measurement method, device, equipment and medium to at least calibrate the offset of the machine table in a timely and intelligent manner according to a preset monitoring period, avoid the adverse effects of machine table errors on subsequent process, and improve the performance of the machine table and the electrical performance and yield of the semiconductor product.

[0006] To achieve the above object and other objects, according to various embodiments of the present disclosure, a first aspect of the present disclosure provides a machine table offset measurement method, comprising: obtaining a monitoring period and a target control wafer, the target control wafer comprising at least one target alignment mark; controlling a machine table to be measured to measure an offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time sequence comprising the offset measurement value and a measurement time thereof; determining a machine table optimal compensation value time sequence of a work-in-process on the machine table to be measured according to the offset measurement value time sequence, the machine table optimal compensation value time sequence comprising an optimal compensation value corresponding to the offset measurement value and a corresponding measurement time; and obtaining an optimal target compensation value of the work-in-process at a target time according to the machine table optimal compensation value time sequence.

[0007] In some embodiments, the target alignment mark includes an in-layer alignment pattern on the target reticle, and a pre-layer alignment pattern between the target reticle and the in-layer alignment pattern; a real offset between the in-layer alignment pattern and the pre-layer alignment pattern is a known value; the method of controlling the measured offset value of the target alignment mark measured by the to-be-tested machine includes: controlling the measured offset value of the in-layer alignment pattern relative to the pre-layer alignment pattern measured by the to-be-tested machine; the method of obtaining the best compensation value corresponding to the measurement time of the measured offset value includes: obtaining a neighboring calibration value before the measurement time of the measured offset value, the calibration value being used to calibrate the offset of the to-be-tested machine in performing a process on a workpiece; the method of obtaining the best target compensation value of the workpiece at a target time according to the time sequence of the machine best compensation value includes: obtaining the best target compensation value of the workpiece at the target time according to the calibration value and the measured offset value of the offset value time sequence in the calibration idle interval; the calibration idle interval includes a time interval starting from the measurement time of the neighboring calibration value and ending at the target time. Since the real offset between the in-layer alignment pattern and the pre-layer alignment pattern is a known value, the measured offset value of the in-layer alignment pattern relative to the pre-layer alignment pattern can be measured by the to-be-tested machine according to a monitoring period, so that the offset value time sequence including the measured offset value and the measurement time of the measured offset value can be obtained. After obtaining the neighboring calibration value before the measurement time of the measured offset value, the best target compensation value of the workpiece at the target time is obtained according to the calibration value and the measured offset value of the offset value time sequence in the calibration idle interval, so as to avoid the environmental error or machine error between the neighboring last manual calibration and the target time, to prevent the subsequent process from being adversely affected, to improve the performance of the machine, and to improve the electrical performance and yield of the semiconductor product.

[0008] In some embodiments, the method of obtaining the best target compensation value of the workpiece at the target time includes: obtaining a sum value of the measured offset value of the offset value time sequence in the calibration idle interval; and determining the best target compensation value of the target time according to the sum value and the calibration value. The measured offset value between the neighboring last manual calibration and the target time can be accumulated, and then the machine is compensated and calibrated based on the sum value, so as to avoid the environmental error or machine error between the neighboring last manual calibration and the target time, to prevent the subsequent process from being adversely affected, to improve the performance of the machine, and to improve the electrical performance and yield of the semiconductor product.

[0009] In some embodiments, the center points of the in-layer alignment pattern and the pre-layer alignment pattern are projected onto the top surface of the target reticle to coincide, so that the machine can accurately measure the measured offset value of the target alignment mark according to a preset monitoring period.

[0010] In some embodiments, when the projection of the layer alignment pattern on the top surface of the previous layer alignment pattern is within the previous layer alignment pattern, the machine can accurately measure the specific offset parameter values such as the lateral offset, the longitudinal offset, etc.

[0011] In some embodiments, the offset measurement values include the wafer lateral offset, the wafer longitudinal offset, the wafer lateral expansion, the wafer longitudinal expansion, the wafer lateral rotation, the wafer longitudinal rotation, the exposure area lateral offset, the exposure area longitudinal offset, the exposure area lateral expansion, the exposure area longitudinal expansion, the exposure area lateral rotation, and the exposure area longitudinal rotation. In this way, the machine can be accurately calibrated according to the specific offset parameter values, the performance of the machine can be accurately improved, and the electrical performance and yield of the semiconductor product can be improved.

[0012] In some embodiments, after obtaining the best target compensation value of the workpiece at the target time, the method further includes: before the workpiece is processed by the machine to be measured, calibrating the machine according to the best target compensation value of the target time. This avoids the environmental error or machine error between the adjacent last manual calibration and the target time, and prevents the subsequent process from being adversely affected.

[0013] A second aspect of the present disclosure provides a machine offset measurement device, including: an obtaining module, a measuring module, and a machine best compensation value determining module. The obtaining module is configured to obtain a monitoring period and a target control wafer, the target control wafer including at least one target alignment mark. The measuring module is configured to control the machine to be measured to measure the offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time sequence including the offset measurement value and the measurement time of the offset measurement value. The machine best compensation value determining module is configured to determine a machine best compensation value time sequence of the workpiece on the machine to be measured according to the offset measurement value time sequence, the machine best compensation value time sequence including the best compensation value corresponding to the offset measurement value and the corresponding measurement time. The machine best compensation value determining module is further configured to obtain the best target compensation value of the workpiece at the target time according to the machine best compensation value time sequence.

[0014] The machine table offset measurement device in the above embodiment, after the acquisition module acquires the preset monitoring period and the target control sheet including at least one target alignment mark, the control measurement module measures the offset measurement value of the target alignment mark according to the monitoring period to obtain an offset measurement value time sequence including the offset measurement value and the measurement time; so that the machine table optimal compensation value determination module can determine the machine table optimal compensation value time sequence of the work-in-process on the machine table to be measured according to the offset measurement value time sequence, the machine table optimal compensation value time sequence includes the optimal compensation value corresponding to the offset measurement value and the corresponding measurement time; and the machine table optimal compensation value determination module can acquire the optimal target compensation value of the work-in-process at the target time according to the machine table optimal compensation value time sequence, so as to compensate and calibrate the machine table according to the optimal target compensation value at the target time, avoid the environmental error or machine table error generated between the adjacent last manual calibration and the target time, cause adverse effects on the subsequent process, improve the performance of the machine table, and the electrical performance and yield of the semiconductor product.

[0015] In some embodiments, the target alignment mark includes a current layer alignment pattern located on the target control sheet, and a previous layer alignment pattern located between the target control sheet and the current layer alignment pattern; the real offset between the current layer alignment pattern and the previous layer alignment pattern is a known value; the measurement module includes a measurement unit configured to control the machine table to be measured to measure the offset measurement value of the current layer alignment pattern relative to the previous layer alignment pattern.

[0016] The third aspect of the present disclosure provides a computer device including a memory and a processor, the memory stores a computer program, and the processor implements the steps of the machine table offset measurement method of any one of the above aspects when executing the computer program.

[0017] The fourth aspect of the present disclosure provides a computer-readable storage medium having a computer program stored thereon, and the computer program implements the steps of the machine table offset measurement method of any one of the above aspects when executed by a processor.

[0018] The fifth aspect of the present disclosure provides a computer program product having a computer program stored thereon, and the computer program implements the steps of the machine table offset measurement method of any one of the above aspects when executed by a processor.

[0019] The machine table offset measurement method, device, equipment and medium in the above embodiments at least have the following unexpected technical effects:

[0020] The monitoring period can be set according to the requirement of the machine calibration frequency. For example, by setting a shorter monitoring period, the frequency of automatic calibration of the machine can be increased to improve the accuracy and performance of the machine as much as possible; if the performance and accuracy of the machine itself are good, the monitoring period can be set longer to reduce the calibration frequency and cost while ensuring the accuracy and performance of the machine. After obtaining the preset monitoring period and the target control film including at least one target alignment mark, the machine to be measured measures the offset measurement value of the target alignment mark according to the monitoring period to obtain an offset measurement value time sequence including the offset measurement value and the measurement time thereof; the machine best compensation value time sequence of the work-in-process on the machine to be measured is determined according to the offset measurement value time sequence, the machine best compensation value time sequence includes the best compensation value corresponding to the offset measurement value and the corresponding measurement time; the best target compensation value of the work-in-process at the target time is obtained according to the machine best compensation value time sequence, so that the machine is compensated and calibrated according to the best target compensation value at the target time, to avoid the environmental error or machine error generated between the adjacent last manual calibration and the target time, to cause adverse effects on the subsequent process, to improve the performance of the machine, and the electrical performance and yield of the semiconductor product. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art without creative labor.

[0022] Figure 1 The application environment schematic diagram of the machine offset measurement method provided in an embodiment of the present disclosure is shown.

[0023] Figure 2 The flowchart schematic diagram of the machine offset measurement method provided in an embodiment of the present disclosure is shown.

[0024] Figure 3 The schematic diagram of obtaining the first compensation value of the machine to be measured based on the target control film measurement in an embodiment of the present disclosure is shown.

[0025] Figure 4 The schematic diagram of obtaining the second compensation value of the machine to be measured based on the target control film measurement in an embodiment of the present disclosure is shown.

[0026] Figure 5 The structural block diagram schematic diagram of the machine offset measurement device provided in an embodiment of the present disclosure is shown.

[0027] Figure 6 The structural block diagram schematic diagram of the machine offset measurement device provided in another embodiment of the present disclosure is shown.

[0028] Figure 7 Fig. 1 is a schematic diagram of an internal structure of a computer device according to an embodiment of the present disclosure.

[0029] Legend of reference signs:

[0030] 10, acquisition module; 20, measurement module; 30, machine optimal compensation value determination module; 21, measurement unit; 102, server; 104, terminal; 100, target wafer; 200, front layer alignment pattern; 300, when layer alignment pattern. DETAILED DESCRIPTION

[0031] For the purpose of facilitating the understanding of the present disclosure, the present disclosure will be described more fully below with reference to the accompanying drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present disclosure can be more thoroughly and completely understood.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. The terminology used in the description of the present disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure.

[0033] In the case of using "include", "have", and "contain" in the present document, unless an explicit limiting term such as "only", "consisting of", etc. is used, another component can be added. Unless otherwise mentioned, the singular form of the term can include the plural form and cannot be understood as the number of one. The specific meaning of the above terms in the present disclosure can be understood according to the specific circumstances by those skilled in the art.

[0034] The accuracy of a semiconductor lithography machine is affected by factors such as design, manufacturing process, and materials and technologies used. For example, the movement accuracy of the machine is affected by factors such as mechanical structure, guide rail system, driving method, feedback system, and environmental factors. A high-quality guide rail system, such as a cross-roller guide rail, can significantly improve the straightness and smoothness of the platform, thereby improving the movement accuracy. The driving method of the machine also affects its movement accuracy. For example, a manual translation stage relies on manual adjustment by the operator, and the positioning accuracy is low, usually tens to hundreds of microns; while an electric translation stage can achieve sub-micron or even nanometer level positioning accuracy. Environmental factors such as temperature changes, vibrations, and external force disturbances can also cause positioning deviations and affect the etching offset of the lithography machine. In semiconductor manufacturing, nanometer-level positioning accuracy is crucial to ensure chip manufacturing accuracy.

[0035] For photolithography process, it is necessary to control two indicators, overlay offset (OVL) and critical dimension (CD). For the control of semiconductor product overlay offset OVL, feedback mechanism is generally used, and the new compensation value 5QC is calculated by subtracting the measurement value (6QC) from the last overage product compensation value (5QC). However, due to the complexity of the product line in the semiconductor factory and the long period of time for the wafer to be shipped, it is easy to appear unstable products in the wafer shipment. However, the compensation value 5QC obtained by using unstable wafer shipment products can easily lead to the precision of the compensation calibrated machine not meeting the target requirements. Moreover, the overlay error caused by factors such as machine movement precision and lens distortion is not included in the subsequent machine compensation calibration step.

[0036] In the embodiments of the present disclosure, a machine overlay measurement method, device, equipment and medium are provided, which can include the daily machine OVL best compensation value BSL change in the OVL compensation calibration step of the long-overage product, improve the success rate of machine trial operation, reduce the rework ratio, avoid the adverse effects of machine error on subsequent process, improve the performance of the machine, and the electrical performance and yield of the semiconductor product.

[0037] The machine overlay measurement method provided by the embodiments of the present disclosure can be applied to the application environment as shown in the figure. Figure 1 The terminal 104 communicates with the server 102 through the network. The server 102 is in communication connection with the server receiving end, and the terminal 104 can also be directly in communication connection with the server receiving end. The communication connection mode includes wired or wireless connection.

[0038] For example, the machine offset measurement method is applied to the terminal 104. The terminal 104 can obtain a monitoring period from a server receiving end. After obtaining a target control sheet, the target control sheet includes at least one target alignment mark. The terminal 104 can control the machine to be measured to measure the offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time sequence including the offset measurement value and the measurement time corresponding to the offset measurement value. The machine optimal compensation value time sequence of the product in process on the machine to be measured is determined according to the offset measurement value time sequence. The machine optimal compensation value time sequence includes the optimal compensation value corresponding to the offset measurement value and the corresponding measurement time. The optimal target compensation value of the product at a target time is obtained according to the machine optimal compensation value time sequence. The terminal 104 can send the optimal target compensation value at the target time to the server 102 for storage. The terminal 104 can be, but is not limited to, various personal computers, notebook computers, smart phones, tablet computers, Internet of Things devices, portable wearable devices, and the like. The portable wearable device can be a smart watch, a smart bracelet, a head-mounted device, or the like. The server 102 can be implemented by an independent server or a server cluster composed of multiple servers. The terminal 104 and the server 102 can be directly or indirectly connected through wired or wireless communication, for example, through network connection.

[0039] For another example, the machine offset measurement method is applied to the server 102. The server 102 obtains a monitoring period from a server receiving end. After obtaining a target control sheet, the target control sheet includes at least one target alignment mark. The server 102 can control the machine to be measured to measure the offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time sequence including the offset measurement value and the measurement time corresponding to the offset measurement value. The machine optimal compensation value time sequence of the product in process on the machine to be measured is determined according to the offset measurement value time sequence. The machine optimal compensation value time sequence includes the optimal compensation value corresponding to the offset measurement value and the corresponding measurement time. The optimal target compensation value of the product at a target time is obtained according to the machine optimal compensation value time sequence. The server 102 can store the optimal target compensation value at the target time, or can forward the obtained optimal target compensation value at the target time to a preset monitoring terminal, so as to facilitate the operator to monitor.

[0040] Based on this, please refer to Figure 2 The present disclosure provides a machine offset measurement method, which can quickly find the problem of etching hole tilt and quickly determine the etching process drift without damaging the wafer, so as to quickly adjust the etching deviation of the photolithography machine and improve the yield and performance of the semiconductor product. The method comprises the following steps:

[0041] Step S11: obtaining a monitoring period and a target control sheet, the target control sheet including at least one target alignment mark;

[0042] Step S12: controlling the machine to be tested to measure the offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time sequence including the offset measurement value and the measurement time thereof;

[0043] Step S13: determining a machine optimal compensation value time sequence of the work-in-process on the machine to be tested according to the offset measurement value time sequence, the machine optimal compensation value time sequence including the optimal compensation value corresponding to the offset measurement value and the corresponding measurement time;

[0044] Step S14: obtaining the optimal target compensation value of the work-in-process at the target time according to the machine optimal compensation value time sequence.

[0045] As an example, please continue to refer to Figure 2 The monitoring period can be set according to the requirement of machine calibration frequency. For example, by setting a shorter monitoring period, the frequency of machine automatic calibration can be increased to improve the accuracy and performance of the machine as much as possible; if the performance and accuracy of the machine itself are good, the monitoring period can be set longer to reduce the calibration frequency and cost while ensuring the accuracy and performance of the machine. After obtaining the preset monitoring period and the target control sheet including at least one target alignment mark, the machine to be tested is controlled to measure the offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time sequence including the offset measurement value and the measurement time thereof; a machine optimal compensation value time sequence of the work-in-process on the machine to be tested is determined according to the offset measurement value time sequence, the machine optimal compensation value time sequence including the optimal compensation value corresponding to the offset measurement value and the corresponding measurement time; the optimal target compensation value of the work-in-process at the target time is obtained according to the machine optimal compensation value time sequence, so that the machine is compensated and calibrated according to the optimal target compensation value at the target time, to avoid the environmental error or machine error generated between the adjacent last manual calibration and the target time, to avoid the adverse effect on the subsequent process, to improve the performance of the machine, and to improve the electrical performance and yield of the semiconductor product.

[0046] As an example, the monitoring period can be set to 24 hours or 1 day, on the one hand, the offset data of the machine can be obtained every day; on the other hand, the measurement cost caused by frequent monitoring can be avoided.

[0047] In some embodiments, due to the lack of machine intelligent monitoring and calibration tools, it is possible that the offset data of the machine is not detected for more than 1 week or even 1 month. In fact, during this period of time, the machine performs multiple maintenance, the machine accuracy is also adjusted several times manually, and the exposure lens also appears slow distortion. It has been proved that the best compensation value (BSL) of the machine has changed greatly. However, due to the lack of corresponding monitoring and calibration mechanism, the calibration idle interval occurs, which causes the environmental error and machine error between the adjacent last manual calibration and the target time, and causes adverse effects on the subsequent process.

[0048] In some embodiments, the step S14 includes:

[0049] Step S141: obtaining the sum value of the offset measurement values in the calibration idle interval of the offset measurement value time sequence;

[0050] Step S142: determining the best target compensation value of the target time according to the sum value and the calibration value.

[0051] As an example, since the offset measurement values in the offset measurement value time sequence are vectors, the changes of the machine OVL can be reflected. The offset measurement values between the adjacent last manual calibration and the target time can be accumulated, and then the machine is compensated and calibrated based on the sum value, so that the machine is compensated and calibrated every day according to the preset monitoring period, for example, 1 day, to avoid the environmental error or machine error between the adjacent last manual calibration and the target time, which causes adverse effects on the subsequent process, improves the performance of the machine, and improves the electrical performance and yield of the manufactured semiconductor products.

[0052] In some embodiments, the step S12 includes:

[0053] Step S121: controlling the machine under test to measure the offset measurement value of the current layer alignment pattern relative to the previous layer alignment pattern.

[0054] As an example, the monitoring period can be set to 24 hours or 1 day, which can achieve the following two aspects: on the one hand, the offset data of the machine can be obtained every day; on the other hand, the measurement cost caused by frequent monitoring can be avoided. In step S121, the offset measurement value of the current layer alignment pattern relative to the previous layer alignment pattern can be measured every day, so as to monitor the offset of the machine every day.

[0055] In some embodiments, before the step S14 includes:

[0056] Step S140: obtaining a neighboring calibration value before the measurement time of the offset measurement value, the calibration value being used to calibrate the offset of the machine under test to perform the process on the work-in-process.

[0057] For example, since the machine is regularly maintained and calibrated, during which the engineers measure the calibration value of the machine by various measurement methods, so as to calibrate the offset of the machine under test to perform the process on the work-in-process according to the calibration value. In this embodiment, after the offset of the machine affected by various factors is measured by using the on-target alignment pattern 300 on the target control sheet 100 and the front layer alignment pattern 200 between the target control sheet 100 and the on-target alignment pattern 300, double calibration of the machine is realized to avoid the adverse effects of the offset between the neighboring two maintenance steps on the process of the machine.

[0058] In some embodiments, the best target compensation value of the work-in-process at the target time is obtained according to the time sequence of the best compensation values of the machine under test in step S14, comprising:

[0059] Step S1421: obtaining the best target compensation value of the work-in-process at the target time according to the calibration value and the offset measurement value in the calibration idle interval of the time sequence of the offset measurement value; the calibration idle interval includes a time interval starting from the measurement time of the neighboring calibration value and ending at the target time.

[0060] Please refer to Figures 3-4 In some embodiments, the target alignment mark includes the on-target alignment pattern 300 on the target control sheet 100 and the front layer alignment pattern 200 between the target control sheet 100 and the on-target alignment pattern 300; the real offset between the on-target alignment pattern 300 and the front layer alignment pattern 200 is a known value, for example, it can be 0.

[0061] For example, since the real offset between the on-target alignment pattern 300 and the front layer alignment pattern 200 is a known value, the offset measurement value of the on-target alignment pattern 300 relative to the front layer alignment pattern 200 can be measured according to the monitoring period by controlling the machine under test, so as to obtain the time sequence of the offset measurement value including the offset measurement value and the measurement time of the offset measurement value. After the neighboring calibration value before the measurement time of the offset measurement value is obtained, the best target compensation value of the work-in-process at the target time is obtained according to the calibration value and the offset measurement value in the calibration idle interval of the time sequence of the offset measurement value, so as to avoid the adverse effects of the environmental error or the machine error between the neighboring last manual calibration and the target time on the subsequent process, improve the performance of the machine, and the electrical performance and yield of the semiconductor product.

[0062] Please refer to Figures 3-4In some embodiments, when the center points of the layer alignment pattern 300 and the previous layer alignment pattern 200 coincide on the orthographic projection of the top surface of the target control plate 100, the machine can accurately measure the offset value of the target alignment mark according to the preset monitoring cycle.

[0063] Please continue to refer to this. Figures 3-4 In some embodiments, when the orthographic projection of the layer alignment pattern onto the top surface of the previous layer alignment pattern is located within the previous layer alignment pattern, it facilitates the machine tool to accurately measure specific offset parameter values ​​such as lateral offset and longitudinal offset.

[0064] Please continue to refer to this. Figures 3-4 In some embodiments, Figure 3 The example in the text describes the initial exposure measurement of the test equipment based on the target control film 100, obtaining the first compensation value BSL1 of the test equipment. Figure 4 One day later, a second exposure measurement is performed on the machine under test based on the target control film 100 to obtain the second compensation value BSL2 of the machine under test. Similarly, an nth exposure measurement is performed on the machine under test based on the target control film 100 to obtain the nth compensation value BSL of the machine under test. n n is greater than or equal to 2, and n is a positive integer. The optimal compensation value time series [BSL1, BSL2, ..., BSL] can be obtained. n ], where the nth compensation value BSL n It includes the corresponding measurement time.

[0065] For example, if the target time is the offset measurement time corresponding to the second compensation value BSL2, and the machine calibration value immediately preceding the first compensation value BSL1 is OVL... m The offset measurements within the calibration idle interval include the first compensation value BSL1 and the second compensation value BSL2. The optimal target compensation value OVL at the target time. d =OVL m +BSL1+BSL2.

[0066] In some embodiments, the offset measurements include wafer lateral offset, wafer longitudinal offset, wafer lateral expansion / contraction, wafer longitudinal expansion / contraction, wafer lateral rotation, wafer longitudinal rotation, exposure area lateral offset, exposure area longitudinal offset, exposure area lateral expansion / contraction, exposure area longitudinal expansion / contraction, exposure area lateral rotation, and exposure area longitudinal rotation. This allows for accurate calibration of the equipment based on specific offset parameter values, precisely improving equipment performance and the electrical performance and yield of the manufactured semiconductor products.

[0067] In some embodiments, the nth compensation value BSL nThe 10 components include wafer lateral offset, wafer longitudinal offset, wafer lateral expansion, wafer longitudinal expansion, wafer lateral rotation, wafer longitudinal rotation, exposure area lateral offset, exposure area longitudinal offset, exposure area lateral expansion, exposure area longitudinal expansion, exposure area lateral rotation, and exposure area longitudinal rotation. Each component is a time series. The machine under test can be precisely calibrated and compensated according to the specific component time series.

[0068] It should be noted that in other embodiments of the present application, the nth compensation value BSL n The number of component types contained in the above embodiment can be less than 10 or greater than 10.

[0069] In some embodiments, after obtaining the best target compensation value of the workpiece at the target time in step S14, the method further comprises: before the workpiece is processed by the machine under test after the target time, calibrating the machine under test according to the best target compensation value at the target time. This avoids the environmental error or machine error between the adjacent last manual calibration and the target time, which may adversely affect the subsequent process.

[0070] Please refer to Figure 5 In some embodiments, a machine offset measurement device is provided, which comprises: an acquisition module 10, a measurement module 20, and a machine best compensation value determination module 30. The acquisition module 10 is configured to acquire a monitoring period and a target control wafer 100, the target control wafer 100 comprising at least one target alignment mark. The measurement module 20 is configured to control the machine under test to measure the offset measurement value of the target alignment mark according to the monitoring period, to obtain an offset measurement value time series comprising the offset measurement value and the measurement time of the offset measurement value. The machine best compensation value determination module 30 is configured to determine a machine best compensation value time series of the workpiece on the machine under test according to the offset measurement value time series, the machine best compensation value time series comprising the best compensation value corresponding to the offset measurement value and the corresponding measurement time. The machine best compensation value determination module 30 is further configured to obtain the best target compensation value of the workpiece at the target time according to the machine best compensation value time series.

[0071] Please continue to refer to Figure 5, after the acquisition module 10 acquires the preset monitoring period and the target control sheet 100 including at least one target alignment mark, the control measurement module 20 measures the offset measurement value of the target alignment mark according to the monitoring period to obtain an offset measurement value time sequence including the offset measurement value and the measurement time of the offset measurement value; so that the machine best compensation value determination module 30 can determine the machine best compensation value time sequence of the work-in-process on the machine to be measured according to the offset measurement value time sequence, the machine best compensation value time sequence includes the best compensation value corresponding to the offset measurement value and the corresponding measurement time; and the machine best compensation value determination module 30 can acquire the best target compensation value of the work-in-process at the target time according to the machine best compensation value time sequence, so as to compensate and calibrate the machine according to the best target compensation value at the target time, avoid the environmental error or machine error generated between the adjacent last manual calibration and the target time, cause adverse effects on the subsequent process, improve the performance of the machine, and the electrical performance and yield of the semiconductor product.

[0072] Please continue to refer to Figures 3-4 In some embodiments, the target alignment mark includes the on-layer alignment pattern 300 located on the target control sheet 100, and the front-layer alignment pattern 200 located between the target control sheet 100 and the on-layer alignment pattern 300; the real offset between the on-layer alignment pattern 300 and the front-layer alignment pattern 200 is a known value.

[0073] Please refer to Figure 6 In some embodiments, the measurement module 20 includes a measurement unit 21, which is used to control the machine to be measured to measure the offset measurement value of the on-layer alignment pattern 300 relative to the front-layer alignment pattern 200. The measurement unit 21 can measure the offset measurement value of the on-layer alignment pattern 300 relative to the front-layer alignment pattern 200 according to the monitoring period, so as to obtain an offset measurement value time sequence including the offset measurement value and the measurement time of the offset measurement value. After the measurement time of the offset measurement value is acquired, the offset measurement value of the offset measurement value time sequence in the calibration idle interval is acquired according to the adjacent last calibration value and the best target compensation value of the work-in-process at the target time is acquired according to the calibration value, so as to avoid the environmental error or machine error generated between the adjacent last manual calibration and the target time, cause adverse effects on the subsequent process, improve the performance of the machine, and the electrical performance and yield of the semiconductor product.

[0074] Please refer to Figure 7 In some embodiments, a computer device is provided, including a memory and a processor, the memory stores a computer program, and the processor implements the steps of the machine offset measurement method of any one of the above when executing the computer program.

[0075] It should be understood that although the steps in the flowcharts related to the embodiments described above are shown in sequence according to the arrows, the steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, the execution of the steps is not strictly limited in sequence, and the steps can be executed in other sequences. Moreover, at least some of the steps in the flowcharts related to the embodiments described above can include multiple steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of the steps or stages is not necessarily sequential, but can be alternately or alternately executed with at least part of other steps or steps or stages in other steps.

[0076] In some embodiments, a computer device is provided, and an internal structure diagram of the computer device can be as shown in Figure 7 The computer device includes a processor, a memory, a communication interface, a display screen and an input device connected by a system bus. The processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operating system and the computer program in the non-volatile storage medium to run. The communication interface of the computer device is configured to communicate with an external terminal in a wired or wireless manner. The wireless manner can be achieved by WIFI, mobile cellular network, NFC (Near Field Communication) or other technologies. The computer program is executed by the processor to implement a machine offset measurement method. The display screen of the computer device can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer overlaid on the display screen, or a key, trackball or touchpad provided on the shell of the computer device, or an external keyboard, touchpad or mouse, etc.

[0077] Those skilled in the art can understand that Figure 7 The structure shown in the figure is only a block diagram of part of the structure related to the present disclosure, and does not constitute a limitation on the computer device to which the present disclosure is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0078] In some embodiments, a computer readable storage medium is provided, and a computer program is stored on the computer readable storage medium. The computer program is executed by the processor to implement the steps of the machine offset measurement method of any one of the above.

[0079] In some embodiments, a computer program product is provided, and a computer program is stored on the computer program product. The computer program is executed by the processor to implement the steps of the machine offset measurement method of any one of the above.

[0080] The machine table offset measurement method, device, equipment and medium in the above embodiments at least have the following unexpected technical effects:

[0081] The monitoring period can be set according to the requirement of machine table calibration frequency. For example, by setting a short monitoring period, the frequency of machine table automatic calibration can be increased to improve the accuracy and performance of the machine table as much as possible. If the performance and accuracy of the machine table are good, the monitoring period can be set longer to reduce the calibration frequency and cost while ensuring the accuracy and performance of the machine table. After obtaining the preset monitoring period and the target control sheet including at least one target alignment mark, the offset measurement value of the target alignment mark is measured by the machine table according to the monitoring period to obtain an offset measurement value time sequence including the offset measurement value and the measurement time. The machine table best compensation value time sequence of the work-in-process on the machine table is determined according to the offset measurement value time sequence. The machine table best compensation value time sequence includes the best compensation value corresponding to the offset measurement value and the corresponding measurement time. The best target compensation value of the work-in-process at the target time is obtained according to the machine table best compensation value time sequence. The machine table is compensated and calibrated according to the best target compensation value at the target time to avoid the environmental error or machine error between the adjacent last manual calibration and the target time, which can cause adverse effects on the subsequent process and improve the performance of the machine table and the electrical performance and yield of the semiconductor product.

[0082] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when executed, can include the processes of the above-mentioned embodiment methods. Any reference to memory, database or other medium used in the embodiments provided by the present disclosure can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive memory (ReRAM), magneto-resistive random access memory (MRAM), ferroelectric memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, the RAM can be dynamic random access memory (DRAM). The processor involved in the embodiments provided by the present disclosure can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a quantum computing-based data processing logic device, etc., without being limited thereto.

[0083] Any combination of the technical features of the above embodiments can be made. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combination of the technical features does not exist, it should be considered as the scope of the present disclosure.

[0084] The above embodiments only express several implementation manners of the present disclosure, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent of the present disclosure. It should be noted that for those skilled in the art, without departing from the concept of the present disclosure, a number of modifications and improvements can be made, which are within the protection scope of the present disclosure.

Claims

1. A method for measuring a stage shift, the method comprising: The method comprises the following steps: acquiring a monitoring period and a target control sheet, the target control sheet comprising at least one target alignment mark; controlling a machine to be tested to measure a displacement measurement value of the target alignment mark according to the monitoring period, to obtain a displacement measurement value time sequence comprising the displacement measurement value and a measurement time of the displacement measurement value; determining a machine optimal compensation value time sequence of a workpiece on the machine to be tested according to the displacement measurement value time sequence, the machine optimal compensation value time sequence comprising an optimal compensation value corresponding to the displacement measurement value and a corresponding measurement time; acquiring an optimal target compensation value of the workpiece at a target time according to the machine optimal compensation value time sequence.

2. The stage shift measurement method according to claim 1, wherein The target alignment mark comprises a current layer alignment pattern on the target control sheet and a previous layer alignment pattern between the target control sheet and the current layer alignment pattern; a real displacement between the current layer alignment pattern and the previous layer alignment pattern is a known value; controlling the machine to be tested to measure the displacement measurement value of the target alignment mark comprises: controlling the machine to be tested to measure a displacement measurement value of the current layer alignment pattern relative to the previous layer alignment pattern; acquiring an optimal compensation value corresponding to a measurement time of the displacement measurement value comprises: acquiring a neighboring calibration value before the measurement time of the displacement measurement value, the calibration value being used to calibrate a displacement of the machine to be tested in performing a process on the workpiece; acquiring an optimal target compensation value of the workpiece at a target time according to the machine optimal compensation value time sequence comprises: acquiring the optimal target compensation value of the workpiece at the target time according to the calibration value and a displacement measurement value in a calibration idle interval of the displacement measurement value time sequence, the calibration idle interval comprising a time interval starting from a measurement time of the neighboring calibration value and ending at the target time.

3. The stage shift measurement method according to claim 2, wherein acquiring the optimal target compensation value of the workpiece at the target time comprises: acquiring a sum value of displacement measurement values in the calibration idle interval of the displacement measurement value time sequence; determining the optimal target compensation value of the target time according to the sum value and the calibration value.

4. The stage shift measurement method according to claim 2, wherein a center point of the current layer alignment pattern and the previous layer alignment pattern is coincident in a normal projection on a top surface of the target control sheet; and / or a normal projection of the current layer alignment pattern on a top surface of the previous layer alignment pattern is located within the previous layer alignment pattern.

5. The stage shift measurement method according to any one of claims 1-4, wherein The displacement measurement value comprises a wafer lateral displacement, a wafer longitudinal displacement, a wafer lateral expansion and contraction, a wafer longitudinal expansion and contraction, a wafer lateral rotation, a wafer longitudinal rotation, an exposure area lateral displacement, an exposure area longitudinal displacement, an exposure area lateral expansion and contraction, an exposure area longitudinal expansion and contraction, an exposure area lateral rotation, and an exposure area longitudinal rotation.

6. The stage shift measurement method according to any one of claims 1-4, wherein After acquiring the optimal target compensation value of the workpiece at the target time, the method further comprises the following step: calibrating the machine according to the optimal target compensation value of the target time before the machine to be tested performs a process on the workpiece after the target time.

7. A stage shift measurement device, comprising: The method comprises the following steps: acquiring a monitoring period and a target control sheet, the target control sheet comprising at least one target alignment mark; a measuring module configured to control the machine under test to measure a shift measurement value of the target alignment mark according to the monitoring period, to obtain a shift measurement value time sequence including the shift measurement value and a measurement time of the shift measurement value; a machine optimal compensation value determination module configured to determine a machine optimal compensation value time sequence of a workpiece on the machine under test according to the shift measurement value time sequence, the machine optimal compensation value time sequence including an optimal compensation value corresponding to the shift measurement value and a corresponding measurement time, and to obtain an optimal target compensation value of the workpiece at a target time according to the machine optimal compensation value time sequence.

8. The stage shift measuring device according to claim 7, wherein The target alignment mark includes a current layer alignment pattern on the target control sheet and a previous layer alignment pattern between the target control sheet and the current layer alignment pattern. A real shift value between the current layer alignment pattern and the previous layer alignment pattern is a known value. The measuring module includes: a measuring unit configured to control the machine under test to measure a shift measurement value of the current layer alignment pattern relative to the previous layer alignment pattern. 9.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-8 when the computer program is executed by the processor. The processor, when executing the computer program, implements the steps of the method of any one of claims 1-6.

10. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program, when executed by the processor, implements the steps of the machine shift measurement method of any one of claims 1-6.

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