Ceramic component and method for manufacturing same

Abstract

Provided is a ceramic member having excellent leakage current suppression properties, plating flow suppression properties, and moisture resistance, and having improved electrode fixing force. The ceramic member is provided with a ceramic body, an internal electrode disposed inside the ceramic body, an insulating layer covering the surface of the ceramic body, and an external electrode (14) covering a part of the surface of the insulating layer and electrically connected to the internal electrode. The insulating layer has a flat portion and a plurality of protruding portions.

Description

Technical Field

[0001] The present invention relates to a ceramic component and a method for manufacturing the ceramic component, and more particularly to a ceramic component including an insulating layer and a method for manufacturing the ceramic component. Background Art

[0002] Various ceramic components, such as varistors, are used in various electronic devices and electronic components. Varistors are used to protect these devices and electronic components from abnormal voltages caused by lightning strikes, static electricity, and other factors, as well as to prevent malfunctions caused by noise generated within circuits. Ceramic components often have an insulating layer on the surface of the ceramic body for various purposes.

[0003] Patent Document 1 discloses a conductive chip-type ceramic component comprising a conductive chip-shaped ceramic body, a terminal electrode having a sintered electrode layer and a plated layer, and an insulating inorganic layer having a melting point or softening point higher than the firing temperature used to form the sintered electrode layer. The insulating inorganic layer is described as reacting with an inorganic binder during the formation of the sintered electrode layer, melting and being absorbed by the electrode layer, thereby disappearing. The ceramic component of Patent Document 1 is believed to have excellent solder heat resistance and solder adhesion, and to have no resistance changes due to electrode plating, thereby improving reliability.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 5-251210 Summary of the Invention

[0007] However, the technology using an insulating layer described in Patent Document 1, when forming plated electrodes on the surface of the external electrodes of a ceramic component, can cause plating flow, resulting in a low yield. Furthermore, the electrode fixing force between the insulating inorganic layer and the external electrodes is low, and water intrusion is possible in humid environments, resulting in reduced moisture resistance. Furthermore, ceramic components are required to suppress leakage current flowing through the insulating layer between the external electrodes, that is, to have excellent leakage current suppression properties.

[0008] An object of the present invention is to provide a ceramic component and a method for producing the ceramic component that are excellent in leakage current suppression, plating flow suppression, and moisture resistance and have improved electrode fixing strength.

[0009] A ceramic component according to one embodiment of the present invention includes a ceramic body, an internal electrode disposed within the ceramic body, an insulating layer covering a surface of the ceramic body, and an external electrode covering a portion of the surface of the insulating layer and electrically connected to the internal electrode. The insulating layer has a flat portion and a plurality of protrusions.

[0010] A method for manufacturing a ceramic component according to one embodiment of the present invention comprises: a first step of forming a ceramic body having an internal electrode therein; a second step of forming an insulating layer having a flat portion and a plurality of protrusions on a surface of the ceramic body; and a third step of forming an external electrode on a portion of the surface of the insulating layer.

[0011] According to the present invention, it is possible to provide a ceramic component having excellent leakage current suppression performance, plating flow suppression performance, and moisture resistance and having improved electrode fixing strength, and a method for producing the ceramic component. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 Schematic cross-sectional view showing the ceramic component according to this embodiment.

[0013] Figure 2 This is a scanning electron microscope photograph of a cross section of the insulating layer in the same ceramic component.

[0014] Description of Reference Numerals

[0015] 1 Ceramic component (varistor), 11 Ceramic body, 12 Internal electrode, 13 Insulating layer, 13a Flat portion, 13b Protrusion, 14 External electrode. DETAILED DESCRIPTION

[0016] 1. Summary

[0017] Hereinafter, the outline of the ceramic component 1 will be described with reference to the drawings. It should be noted that the drawings are schematic diagrams, and the sizes and thickness ratios of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0018] To solve the above-mentioned problems, the inventors conducted intensive research on various structures of ceramic components and discovered that there is a correlation between the surface shape of the insulating layer and various properties of the ceramic component, thereby completing the present invention.

[0019] The ceramic component 1 of this embodiment includes a ceramic body 11, an internal electrode 12, an insulating layer 13, and an external electrode 14. The internal electrode 12 is arranged inside the ceramic body 11. The insulating layer 13 covers the surface of the ceramic body 11. The external electrode 14 covers a portion of the surface of the insulating layer 13 and is electrically connected to the internal electrode 12. In the ceramic component 1 of this embodiment, as shown in FIG. Figure 1 As shown, the insulating layer 13 has a flat portion 13 a and a plurality of protrusions 13 b .

[0020] The ceramic component 1 has excellent leakage current suppression, coating flow suppression and moisture resistance, and the electrode fixing force is improved. The reason why these characteristics are achieved by providing the ceramic component 1 with the above-mentioned structure can be speculated as follows, for example. It is believed that because the insulating layer 13 of the ceramic component 1 has the protrusion 13b, the surface distance of the insulating layer 13 becomes larger, thereby further reducing the leakage current. Moreover, in the ceramic component 1, the insulating layer 13 has a concave-convex shape, thereby further reducing the coating flow. It is also believed that because the insulating layer 13 has a concave-convex structure, the intrusion of water can be further reduced, as a result, the moisture resistance is improved. It is also believed that due to the anchoring effect of the surface of the insulating layer 13, the fixing force between the insulating layer 13 and the external electrode 14 is further increased, as a result, the insulation outside the electrode portion is improved.

[0021] The method for manufacturing the ceramic component 1 of this embodiment includes a first step, a second step, and a third step. In the first step, a ceramic body 11 having an internal electrode 12 therein is formed. In the second step, an insulating layer 13 having a flat portion 13a and a plurality of protrusions 13b is formed on the surface of the ceramic body 11. In the third step, an external electrode 14 is formed on a portion of the surface of the insulating layer 13.

[0022] According to the method for manufacturing the ceramic component 1 , by configuring the insulating layer 13 to have the flat portion 13 a and the protrusion 13 b , the ceramic component 1 having excellent leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing strength can be manufactured simply and reliably.

[0023] 2. Details

[0024] <Ceramic components>

[0025] The ceramic component 1 of this embodiment includes a ceramic body 11, an internal electrode 12, an insulating layer 13, and an external electrode 14. It may further include plated electrodes. Examples of the ceramic component 1 of this embodiment include a varistor, a thermistor, and a ceramic capacitor. The following description uses the case where the ceramic component 1 of this embodiment is a varistor 1 as an example.

[0026] In the varistor 1 , at least one pair of the internal electrodes 12 and the external electrodes 14 may be provided. Figure 1The varistor 1 includes a pair of internal electrodes 12 and external electrodes 14. The pair of internal electrodes 12 includes, for example, a first internal electrode 12A and a second internal electrode 12B. The pair of external electrodes 14 includes, for example, a first external electrode 14A provided on one end surface of the ceramic body 11 and a second external electrode 14B provided on the other end surface of the ceramic body 11. The first internal electrode 12A is electrically connected to the first external electrode 14A, and the second internal electrode 12B is electrically connected to the second external electrode 14B. In the varistor 1, one of the first external electrode 14A and the second external electrode 14B serves as an electrode on the high potential side, and the other of the first external electrode 14A and the second external electrode 14B serves as an electrode on the low potential side.

[0027] [Ceramic body]

[0028] In the varistor 1, the ceramic body 11 includes, for example, a semiconductor ceramic component having nonlinear resistance characteristics. The ceramic body 11 may generally include ZnO as a main component, Bi2O3, Co2O3, MnO2, Sb2O3, Pr6O 11 , CaCO 3 , Cr 2 O 3 , etc. are used as accessory components. In the semiconductor ceramic component, the main component such as ZnO and part of the accessory components undergo solid solution sintering, and the remaining accessory components precipitate at the grain boundaries, thereby forming the ceramic body 11 .

[0029] [Internal electrodes]

[0030] Internal electrodes 12 are disposed within ceramic body 11. Internal electrodes 12 include, for example, a metal such as Ag, Pd, PdAg, or PtAg. Ceramic body 11 having internal electrodes 12 therein is formed by, for example, stacking ceramic sheets coated with an internal electrode paste containing these metals and firing the stacked ceramic sheets.

[0031] [Insulation layer]

[0032] The insulating layer 13 is provided so as to cover at least a portion of the ceramic body 11. The insulating layer 13 is preferably provided so as to cover the entire surface of the ceramic body 11.

[0033] Figure 2 FIG is a scanning electron microscope (SEM) photograph of a cross section of the insulating layer 13. The insulating layer 13 has a flat portion 13a and a plurality of protrusions 13b. Figure 1 and Figure 2As shown, the flat portion 13a is a film-shaped portion of the insulating layer 13 that overlaps with the surface of the ceramic body 11 and has a substantially constant thickness. The phrase "having a substantially constant thickness" means that the maximum thickness of the flat portion 13a is less than 1.2 times the minimum thickness. Specifically, the flat portion 13a is formed, for example, along the surface shape of the grains of the surface layer of the ceramic body 11, and may be a flat shape or a curved shape. The protrusion 13b is a portion of the insulating layer 13 that exists on the surface of the flat portion 13a on the side opposite to the ceramic body 11, and refers to particles that exist on the surface of the flat portion 13a, or portions that protrude from the surface of the flat portion 13a in the form of particles.

[0034] (Flat part)

[0035] The average thickness of the flat portion 13a is preferably 0.05 μm or more and 1 μm or less. By setting the average thickness of the flat portion 13a within the above range, leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing strength can be further improved. The average thickness of the flat portion 13a is more preferably 0.1 μm or more, and even more preferably 0.15 μm or more. The average thickness of the flat portion 13a is more preferably 0.5 μm or less, and even more preferably 0.3 μm or less. The "average thickness" of the flat portion 13a refers to the arithmetic mean of the thicknesses measured at multiple points (e.g., any 10 points) on the cross section of the flat portion 13a.

[0036] (Protrusion)

[0037] The number of protrusions 13b is plural, that is, 2 or more, preferably 10 or more, more preferably 100 or more, and further preferably 1000 or more. The density of protrusions 13b is preferably 250 / μm. 2 More than 500 pieces / μm 2 The density of the protrusions 13b is, for example, 1000 / μm. 2 The plurality of protrusions 13b are generally randomly dispersed on the surface of the flat portion 13a.

[0038] The size of the protrusion 13b is preferably not less than 0.1 μm and not more than 10 μm. By setting the size of the protrusion 13b to the above range, the leakage current suppression, plating flow suppression, moisture resistance and electrode fixing force can be further improved. The size of the protrusion 13b is more preferably not less than 0.5 μm, and more preferably not less than 1 μm. The size of the protrusion 13b is more preferably not more than 8 μm, and more preferably not more than 5 μm. The so-called "size" of the protrusion 13b refers to the average major diameter of the protrusion. The so-called "major diameter" of the protrusion refers to the longest diameter in the three-dimensional shape of the protrusion 13b, and the so-called "average major diameter" refers to the arithmetic mean of the major diameters measured for multiple (for example, any 10 points) protrusions 13b. The average major diameter of the protrusion can be measured, for example, by observing the insulating layer using an electron microscope.

[0039] Examples of materials that constitute the flat portion 13a or the protrusion 13b include SiO2, ZrO2, Al2O3, and ZnO. Among these, at least one of SiO2 and ZrO2 is preferred. Furthermore, it is preferred that both the flat portion 13a and the protrusion 13b contain SiO2. In this case, leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing strength can be further improved.

[0040] The composition of the flat portion 13a and the protrusion 13b can be the same. In this case, leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing strength can be further improved. The composition of the flat portion 13a or the protrusion 13b refers to the type of inorganic substances and the like that constitute the flat portion 13a or the protrusion 13b, and their respective content ratios (mass %). The phrase "the flat portion 13a and the protrusion 13b have the same composition" means that the substances that constitute the flat portion 13a and the substances that constitute the protrusion 13b are at least 95% by mass of the same substance.

[0041] The flat portion 13a and the protrusions 13b, which have the same composition, are formed using, for example, atomic layer deposition (ALD). The flat portion 13a can be formed by depositing an atomic layer using ALD, while the protrusions 13b can be formed by depositing particles formed using ALD on the surface of the flat portion 13a. Alternatively, the protrusions 13b can be formed by depositing separately prepared particles, such as insulating particles, having the same composition as the flat portion 13a on the surface of the flat portion 13a during or after ALD formation.

[0042] The composition of the flat portion 13a and the protrusion 13b may also differ. In this case, the leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing strength can be adjusted, and these characteristics can be further improved by combining the compositions. The phrase "different composition" between the flat portion 13a and the protrusion 13b means that the composition is different, that is, the material constituting the flat portion 13a and the material constituting the protrusion 13b differ by at least 5% by mass.

[0043] The flat portion 13a and the protrusion 13b having different compositions can be formed, for example, by forming the flat portion 13a using ALD and having particles such as insulating particles having a composition different from that of the flat portion 13a present on the surface of the flat portion 13a during or after formation.

[0044] [External electrodes]

[0045] The external electrode 14 is provided to cover at least a portion of the insulating layer 13 and is electrically connected to the internal electrode 12. In the ceramic component 1 of this embodiment, the protrusion 13b on the insulating layer 13 enables the external electrode 14 to exert an anchoring effect, thereby improving the electrode fixing force. Conventional ceramic components are prone to external electrode peeling due to the excessive smoothness of the insulating layer formed using PVD, CVD, ALD, etc.

[0046] The external electrode 14 includes, for example, a metal component such as Ag, AgPd, or AgPt and a glass component such as Bi2O3, SiO2, or B2O3. The external electrode 14 preferably contains a metal as a main component, and more preferably contains Ag as a main component.

[0047] The external electrode 14 may have a single-layer structure (external electrode 14A and external electrode 14B) or a multilayer structure having a plurality of layers.

[0048] The external electrodes 14 are generally formed by applying an external electrode paste to a portion of the surface of the insulating layer 13 .

[0049] [Plating electrode]

[0050] The plating electrode is provided so as to cover at least a portion of the external electrode 14. In the ceramic component 1 of this embodiment, the protrusion 13b of the insulating layer 13 provides excellent plating flow suppression. Conventional ceramic components are prone to plating flow due to, for example, excessive smoothness of the insulating layer formed by PVD, CVD, ALD, etc. The plating electrode includes, for example, a Ni electrode provided so as to cover at least a portion of the external electrode 14, and a Sn electrode provided so as to cover at least a portion of the Ni electrode.

[0051] <Method for manufacturing ceramic components>

[0052] The method for producing a ceramic component according to the present embodiment includes a first step, a second step, and a third step. The method for producing a ceramic component may further include a step of forming a plated electrode as a fourth step.

[0053] [Step 1]

[0054] In the first step, a ceramic body 11 having internal electrodes 12 therein is formed.

[0055] In the first step, internal electrode paste is applied to ceramic sheets made of, for example, a slurry containing ZnO, and the ceramic sheets are stacked, pressed, and cut, followed by debinding and firing to produce a ceramic body 11 having internal electrodes 12 therein. The slurry can be made of, for example, ZnO as a main raw material, Bi2O3, Co2O3, MnO2, Sb2O3, Pr6O3 as auxiliary raw materials, and ZnO as a main raw material. 11 , CaCO3, Cr2O3, etc. are mixed with a binder.

[0056] As the internal electrode paste, for example, Ag paste, Pd paste, Pt paste, PdAg paste, PtAg paste, or the like can be used.

[0057] The binder removal temperature is, for example, 300° C. to 500° C. The firing temperature can be appropriately adjusted according to the structure and composition of the obtained ceramic body 11 and is, for example, 800° C. to 1300° C.

[0058] [Step 2]

[0059] In the second step, the insulating layer 13 having the flat portion 13 a and the plurality of protrusions 13 b is formed on the surface of the ceramic body 11 .

[0060] Examples of methods for forming the insulating layer 13 having the flat portion 13 a and the protrusions 13 b include (i) a method using atomic layer deposition, (ii) a method of forming the protrusions 13 b by attaching a plurality of insulating particles to the flat portion 13 a during formation, and (iii) a method of applying a precursor slurry containing insulating particles.

[0061] In method (i), a flat portion 13a and protrusions 13b are formed on the surface of a ceramic body 11 using atomic layer deposition (ALD). Specifically, for example, the ceramic body 11 is placed in a container, such as a cage, within a vacuum chamber of an ALD apparatus. While the container is rotated, a gaseous precursor and an oxidant gas, such as humidified Ar or O2, are alternately introduced and exhausted, thereby forming the insulating layer 13. During this process, powdered ALD material adhering to the cage or other container is removed from the flat portion 13a formed by the ALD process, leaving the protrusions 13b attached to the surface. In method (i), the resulting flat portion 13a and protrusions 13b generally have the same composition. Furthermore, according to method (i), the size and density of the protrusions 13b can be varied by adjusting the ALD duration, the container rotation speed, and other factors.

[0062] Precursors used in ALD include SiH[N(CH3)2]3 for the formation of SiO2, Al(CH3)3 for the formation of Al2O3, Zr[N(CH3)(C2H5)]4 for the formation of ZrO2, and Zn(CH3)2 for the formation of ZnO. In these formations, humidified Ar gas is used as the oxidant gas.

[0063] In the method (ii), a plurality of insulating particles are attached to the flat portion 13a during formation, thereby forming the protrusions 13b. Specifically, for example, during the formation of the flat portion 13a by ALD or a method other than ALD, insulating particles are added to the surface of the flat portion 13a, thereby forming the protrusions 13b. Examples of materials constituting the insulating particles include SiO2, ZrO2, Al2O3, and ZnO. The composition of the insulating particles may be the same as or different from that of the flat portion 13a. According to the method (ii), the size and density of the protrusions 13b can be changed by adjusting the size and amount of the insulating particles added.

[0064] In the method (iii), a precursor slurry containing a precursor material of the insulating layer 13 and insulating particles is applied to the surface of the ceramic body 11, and then heat-treated to dehydrate and solidify it, thereby forming a flat portion 13a and a protrusion 13b. Examples of the precursor material contained in the precursor slurry include glass components having Si in the main chain of polysilazane, etc. Thus, a flat portion 13a containing SiO2 can be formed. Examples of substances constituting the insulating particles include SiO2, ZrO2, Al2O3, ZnO, etc. The composition of the insulating particles may be the same as or different from that of the flat portion 13a. Examples of the method for applying the precursor slurry include spraying, dipping, printing, etc.

[0065] In the second step, by forming part or all of the insulating layer 13 by atomic layer deposition, the density of the insulating layer 13 becomes higher, thereby further improving the water intrusion suppression property of the ceramic component 1 and further improving the moisture resistance.

[0066] [Step 3]

[0067] In the third step, the external electrode 14 is formed on a portion of the surface of the insulating layer 13 .

[0068] In the third step, for example, after applying the external electrode paste to a portion of the surface of the insulating layer 13 in contact with a portion of the internal electrode 12, the external electrode 14 is formed by sintering. The external electrode paste can be prepared by mixing a metal component including Ag powder, AgPd powder, AgPt powder, etc., a glass component including Bi2O3, SiO2, B2O3, etc., and a solvent. In addition, as the external electrode paste, a paste containing Ag as the main component and a resin component can also be used. Examples of the coating method of the external electrode paste include dipping and printing. The sintering temperature is, for example, not less than 700°C and not more than 800°C.

[0069] [Step 4]

[0070] In the fourth step, a plated electrode is formed so as to cover at least a portion of the external electrode 14. Examples of a method for forming the plated electrode include sequentially performing Ni plating and Sn plating by electroplating.

[0071] <Performance of ceramic components>

[0072] The leakage current suppressability of the ceramic component 1 of the present embodiment and a conventional ceramic component were evaluated and compared.

[0073] Ceramic component 1 of the present embodiment: a varistor having an insulating layer made of SiO 2 and having a flat portion and a protruding portion formed by atomic layer deposition.

[0074] Conventional ceramic components: A varistor having an insulating layer made of SiO2 and having flat portions and no protrusions is formed by applying a precursor solution containing polysilazane to the surface of a ceramic body and then performing a heat treatment.

[0075] Each of the ceramic components prepared above was subjected to a 48-hour pressure cooker bias test (PCBT) and the ΔV 1μA The change rate (%) (n=20).

[0076] ΔV 1μA (%) = (V after test1μA -V before the test 1μA )×100 / V before test 1μA

[0077] The arithmetic mean and minimum value of the measured values ​​of n=20 and the percentage of the change rate being -3% or less are shown in Table 1 below.

[0078] ΔV 1μA The ratio of the rate of change of -3% or less shows the susceptibility of leakage current, and the smaller the ratio, the better the leakage current suppression performance.

[0079] [Table 1]

[0080]

[0081] As is clear from the results in Table 1, the ceramic component 1 of the present embodiment is superior in leakage current suppression performance compared to the conventional ceramic component having no protrusions.

[0082] It is believed that the ceramic component 1 of this embodiment, other than the varistor 1 , such as a thermistor and a ceramic capacitor, also excels in leakage current suppression, plating flow suppression, and moisture resistance, and has improved electrode fixing strength.

[0083] (Summarize)

[0084] As is clear from the above-described embodiments, the present invention includes the following aspects.

[0085] A ceramic component (1) according to a first embodiment includes a ceramic body (11), an internal electrode (12) disposed inside the ceramic body (11), an insulating layer (13) covering the surface of the ceramic body (11), and an external electrode (14) covering a portion of the surface of the insulating layer (13) and electrically connected to the internal electrode (12). The insulating layer (13) includes a flat portion (13a) and a plurality of protrusions (13b).

[0086] According to the first embodiment, the ceramic component (1) has excellent leakage current suppression, plating flow suppression, and moisture resistance, and also has improved electrode fixing force.

[0087] In the ceramic component (1) of the second embodiment, in the first embodiment, the average thickness of the flat portion (13a) is 0.05 μm or more and 1 μm or less.

[0088] According to the second aspect, in the ceramic component (1), by setting the average thickness of the flat portion (13a) to the above range, leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing force can be further improved.

[0089] In the ceramic component (1) of the third embodiment, in the first or second embodiment, the size of the protrusion (13b) is 0.1 μm or more and 10 μm or less.

[0090] According to the third aspect, in the ceramic component (1), by setting the size of the protrusion (13b) to the above range, leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing force can be further improved.

[0091] In the ceramic component (1) of the fourth embodiment, in any one of the first to third embodiments, the composition of the flat portion (13a) is the same as the composition of the protrusion (13b).

[0092] According to the fourth aspect, by making the flat portion (13a) and the protrusion (13b) have the same composition, leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing force can be further improved.

[0093] In the ceramic component (1) of the fifth embodiment, in any one of the first to third embodiments, the composition of the flat portion (13a) is different from the composition of the protrusion (13b).

[0094] According to the fifth aspect, leakage current suppression, plating flow suppression, moisture resistance, and electrode fixing force can be adjusted, and these characteristics can be further improved by combining the components.

[0095] A sixth embodiment of the ceramic component (1) is one of the first to fifth embodiments, wherein the ceramic body (11) contains ZnO as a main component, and the flat portion (13a) and the protrusion (13b) of the insulating layer (13) contain SiO2.

[0096] According to the sixth aspect, a varistor having further improved leakage current suppression performance, plating flow suppression performance, moisture resistance, and electrode fixing strength can be obtained.

[0097] A seventh embodiment of a method for manufacturing a ceramic component (1) comprises a first step, a second step, and a third step. In the first step, a ceramic body (11) having an internal electrode (12) therein is formed. In the second step, an insulating layer (13) having a flat portion (13a) and a plurality of protrusions (13b) is formed on the surface of the ceramic body (11). In the third step, an external electrode (14) is formed on a portion of the surface of the insulating layer (13).

[0098] According to the seventh aspect, a ceramic component (1) having excellent leakage current suppression, plating flow suppression, and moisture resistance and improved electrode fixing force can be manufactured simply and reliably.

[0099] In the eighth aspect of the method for manufacturing a ceramic component (1), in the seventh aspect, in the second step, the insulating layer (13) is formed by atomic layer deposition.

[0100] According to the eighth aspect, by forming the insulating layer (13) by atomic layer deposition, the density of the insulating layer is further increased, thereby further improving the water intrusion suppression property of the ceramic component (1) and further improving the moisture resistance.

[0101] In the ninth aspect of the method for manufacturing a ceramic component (1), in the seventh or eighth aspect, in the second step, a plurality of insulating particles are attached to a flat portion (13a) in the process of formation, thereby forming a protrusion (13b).

[0102] According to the ninth aspect, the insulating layer (13) having the same or different compositions of the flat portion (13a) and the protruding portion (13b) can be formed more simply and reliably.

Claims

1. A ceramic component comprising: Ceramic body, An internal electrode disposed inside the ceramic body, an insulating layer covering the surface of the ceramic body, and an external electrode covering a portion of the surface of the insulating layer and electrically connected to the internal electrode, The insulating layer has a flat portion and a plurality of protrusions.

2. The ceramic component according to claim 1, wherein The average thickness of the flat portion is 0.05 μm or more and 1 μm or less.

3. The ceramic component according to claim 1, wherein The size of the protrusion is not less than 0.1 μm and not more than 10 μm.

4. The ceramic component according to claim 1, wherein The composition of the flat portion is the same as that of the protruding portion.

5. The ceramic component according to claim 1, wherein The composition of the flat portion is different from that of the protruding portion. The ceramic component according to claim 1 , wherein: The ceramic body contains ZnO as a main component, The flat portion and the protruding portion of the insulating layer include SiO 2 .

7. A method for manufacturing a ceramic component, comprising: In the first step, a ceramic body having internal electrodes is formed. A second step is to form an insulating layer having a flat portion and a plurality of protrusions on the surface of the ceramic body; and In the third step, an external electrode is formed on a portion of the surface of the insulating layer.

8. The method for manufacturing a ceramic component according to claim 7, wherein: In the second step, the insulating layer is formed by atomic layer deposition.

9. The method for manufacturing a ceramic component according to claim 7, wherein: In the second step, the protrusions are formed by attaching a plurality of insulating particles to the flat portion during formation.

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