Precise conductive enclosure device

Abstract

The invention discloses a precise conductive enclosure device, which relates to the technical field of semiconductors and comprises a module A. A conductive structure of the module A forms a resistance gradient through at least one of conductive layer thickness gradient distribution, material component gradient distribution and section shape gradient distribution. When the electromagnetic shielding effectiveness is regulated and controlled, the high-frequency current is guided to form a skin effect dense layer on the surface of the conductive structure by using the resistance gradient, so that the high-frequency current is gathered, and external electromagnetic interference penetration is reduced. During thermal management regulation and control, current parameters of the conductive structure are adjusted, the low-temperature area is heated by increasing the current, continuous temperature rising of the high-temperature area is restrained by reducing the current, and active temperature control is achieved. In the integrated circuit, through impedance matching between the resistance gradient and the high-frequency current, the duty ratio of the pulse current is adjusted, so that the equivalent resistance is matched with the signal frequency, signal reflection and crosstalk are inhibited, and stable signal transmission is ensured. Compared with the prior art, the problems of electromagnetic interference, thermal management and signal integrity can be effectively solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a precision conductive enclosure device for achieving efficient electromagnetic shielding, precise thermal management, and signal integrity assurance for electronic modules. Background Art

[0002] With the rapid development of electronic technology, electronic devices are evolving towards miniaturization, integration, and high performance. In complex electromagnetic environments, electromagnetic interference (EMI) between modules within electronic devices is becoming increasingly prominent, seriously impacting device performance and reliability. Furthermore, the high-density integration of electronic components leads to heat concentration, making thermal management a critical factor restricting stable device operation. Furthermore, issues such as signal reflection and crosstalk during high-speed signal transmission place higher demands on signal integrity.

[0003] Traditional electromagnetic shielding measures, such as metal shielding covers, are usually fixed structures that are difficult to dynamically adjust according to the actual electromagnetic environment and signal characteristics, and their shielding effectiveness is limited. In terms of thermal management, passive heat dissipation methods are difficult to meet the heat dissipation needs of high-performance chips, and active heat dissipation methods have problems such as high energy consumption and complex structure. For signal integrity, existing impedance matching and interference suppression methods often rely on complex circuit designs, which increases costs and design difficulty. Therefore, the development of a modular device that can simultaneously take into account electromagnetic shielding, thermal management, and signal integrity, and has dynamic control capabilities, is of great practical significance. Summary of the Invention

[0004] The purpose of the present invention is to solve the problem in the prior art that electronic devices are difficult to balance electromagnetic interference resistance, thermal management difficulties and signal integrity.

[0005] To achieve the above-mentioned purpose, the present invention adopts the following technical solution: a precision conductive enclosure device, comprising a module A, wherein the module A comprises a conductive structure having an enclosure functional area.

[0006] The conductive structure of the module A forms a resistance gradient through at least one of a conductive layer thickness gradient distribution, a material composition gradient distribution, and a cross-sectional shape gradient distribution.

[0007] By regulating the parameters of the current flowing through the conductive structure, dynamic regulation of electromagnetic shielding effectiveness, thermal management or signal integrity can be achieved.

[0008] In the above technical solution, the dynamic control mechanism of the embodiment of the present invention is implemented as follows: when regulating the electromagnetic shielding effectiveness, the resistance gradient is used to guide the high-frequency current to form a dense skin effect layer on the surface of the conductive structure, allowing the high-frequency current to concentrate and reduce the penetration of external electromagnetic interference. During thermal management, active temperature control is achieved by adjusting the current parameters of the conductive structure, increasing the current to heat the low-temperature area, and reducing the current to suppress the continuous temperature increase in the high-temperature area. In the integrated circuit, the resistance gradient is matched with the high-frequency current impedance, and the pulse current duty cycle is adjusted to adapt the equivalent resistance to the signal frequency, suppressing signal reflection and crosstalk, ensuring stable signal transmission, and improving the performance of the integrated circuit.

[0009] Advantages of the present invention Compared with the prior art, the dynamic control mechanism of the precision conductive enclosure device based on the resistance gradient of the present invention has significant advantages. Traditional electromagnetic shielding measures are difficult to adjust dynamically, but the present application can flexibly respond to the actual electromagnetic environment and greatly improve the shielding effect. In terms of thermal management, it breaks through the limitations of passive heat dissipation, realizes precise active temperature control, and ensures the stable operation of electronic components. For signal integrity, it no longer relies on complex circuit design. Through simple and effective control methods, it significantly reduces signal distortion and improves the accuracy and speed of data transmission. Overall, it greatly improves the performance, stability and reliability of electronic equipment.

[0010] Furthermore, in an embodiment of the present invention, a module B which is a functional device is also included, and the module B is arranged in the enclosed functional area.

[0011] Furthermore, in an embodiment of the present invention, the resistance gradient distribution is implemented in at least one of the following ways:

[0012] a) The conductive structure is composed of at least two metal materials, and its composition changes in a stepwise or continuous manner along the extension direction of the enclosed area.

[0013] b) The thickness of the conductive layer changes in a step-like or continuous manner along the extending direction of the enclosed area.

[0014] c) The cross section of the conductive structure is a corrugated and / or trapezoidal structure with a gradually changing curvature.

[0015] Furthermore, in an embodiment of the present invention, the physical form of the conductive structure includes a fully enclosed type, a fully hollowed type, or a partially open type.

[0016] When the conductive structure is a hollow structure, the hollow aperture satisfies the electromagnetic shielding condition of d<<λ / 10, where d is the aperture size and λ is the wavelength of the electromagnetic wave to be shielded.

[0017] When the conductive structure is an open structure, the shape of the opening is a cross or a spiral, and the size of the open structure and the resonant frequency of module B are in a nonlinear corresponding relationship.

[0018] Furthermore, in an embodiment of the present invention, module A includes a support substrate composed of a ceramic-polymer composite material or a silica-epoxy composite material, and a conductive structure having a thickness of 2-500 μm formed on the surface of the support substrate via a laser surface activation process or a fan-out packaging-like process. Alternatively, the conductive structure is a self-supporting three-dimensional network architecture formed via a selective additive manufacturing process.

[0019] Furthermore, in an embodiment of the present invention, the type of energy interaction between the module A and the module B includes at least one of the following:

[0020] a) Interaction between electromagnetic energy and electromagnetic energy: Module A shields external interference through the hollow structure, and the electromagnetic signal of module B is directionally radiated through the hollow channels of the hollow structure.

[0021] b) Interaction between electrical energy and electromagnetic energy: Module A acts as an inductor and the current change of module B forms a bidirectional energy conversion.

[0022] c) Interaction between electrical energy and thermal energy: Active temperature control of module B is achieved through the Joule heat distribution generated by the resistance gradient of module A.

[0023] Furthermore, in an embodiment of the present invention, the dynamic control includes at least one of the following mechanisms:

[0024] a) Electromagnetic shielding effectiveness control: High-frequency current is guided by a resistance gradient to form a dense skin effect layer on the surface of the conductive structure, suppressing external electromagnetic interference. Alternatively, the current frequency is adjusted to match the skin depth with the micro-nanotopography of the conductive structure's surface, enhancing the attenuation of interference in specific frequency bands.

[0025] b) Thermal management and control: Based on the temperature change of module B, the current parameters are adjusted to change the Joule heat distribution, directional heating is applied to compensate for low temperatures in high resistance areas, and heat dissipation is optimized to suppress high temperatures in low resistance areas.

[0026] c) Signal integrity control: The resistance gradient is matched to the impedance of the high-frequency current, and the duty cycle of the pulse current is adjusted to dynamically adapt the equivalent resistance of the impedance matching area to the signal frequency, thereby suppressing signal reflection and crosstalk.

[0027] Furthermore, in an embodiment of the present invention, the module B is a sensor or a radio frequency module or a computing chip, and the module B is connected to the I / O pin of the circuit board main control chip through gold wire bonding or flip-chip bonding, or its power / signal pin is connected to the power supply network wiring of the circuit board through embedded copper pillars or microvias.

[0028] Furthermore, in an embodiment of the present invention, the conductive structure is connected to the power layer or ground layer of the circuit board through a pad or a through-hole to form a low-impedance loop, and the current parameter control includes a pulse width modulation drive mode, a duty cycle adjustment range of 5%-95%, and a frequency range of 1-10kHz.

[0029] Furthermore, in an embodiment of the present invention, the device also includes an environmental status sensor for real-time monitoring of temperature, current intensity or electromagnetic field intensity parameters, and dynamically optimizing the matching strategy of resistance gradient distribution and current parameters through a closed-loop feedback algorithm.

[0030] Furthermore, in an embodiment of the present invention, the modular structure-based precision conductive enclosure device is used as an independent packaging unit in at least one of the following scenarios:

[0031] a) Mobile terminal.

[0032] b) Radar module.

[0033] c) Integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 Schematic diagram of the structure of a conductive enclosure device according to an embodiment of the present invention.

[0035] Figure 2 Schematic diagram of the fully enclosed structure of the conductive enclosure device according to an embodiment of the present invention.

[0036] Figure 3 Schematic diagram of another fully enclosed structure of the conductive enclosure device according to an embodiment of the present invention.

[0037] Figure 4 Schematic diagram of the hollowed-out or partially opened structure of the conductive enclosure device according to an embodiment of the present invention.

[0038] Figure 5 Schematic diagram of a hollow or partially open structure combination of a conductive enclosure device according to an embodiment of the present invention.

[0039] 1. Conductive structure, 2. Functional device, 3. Substrate, 4. Circuit board. DETAILED DESCRIPTION

[0040] In order to clearly and completely describe the objectives and technical solutions of the present invention and make the advantages more clearly understood, the embodiments of the present invention are further described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are part of the embodiments of the present invention, not all of them, and are only used to explain the embodiments of the present invention, not to limit the embodiments of the present invention. All other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0041] In the description of the present invention, it should be noted that the terms "center," "middle," "upper," "lower," "left," "right," "inner," "outer," "top," "bottom," "side," "vertical," "horizontal," and the like, indicating positions or location relationships, are based on the positions or location relationships shown in the accompanying drawings and are intended only to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limiting the present invention. Furthermore, the terms "one," "first," "second," "third," "fourth," "fifth," and "sixth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0042] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0043] For the purpose of simplicity and illustration, the principles of the embodiments are described primarily with reference to examples. In the following description, many specific details are presented to provide a thorough understanding of the embodiments. However, it is obvious that, for those skilled in the art, these embodiments may not be limited to these specific details in practice. In some instances, related structures known to be applied to precision conductive enclosures are not described in detail to avoid unnecessarily obscuring the understanding of these embodiments. In addition, all embodiments may be used in combination with each other.

[0044] A precision conductive enclosure device comprises module A, whose conductive structure forms a resistance gradient through various gradient distribution methods. Current parameters can be manipulated to dynamically adjust electromagnetic shielding effectiveness, thermal management, or signal integrity. Module B is located within the functional enclosure, and modules A and B interact with each other in various ways. The device has various specific structures and application scenarios, and can optimize matching strategies through environmental state sensors and closed-loop feedback algorithms.

[0045] Example 1:

[0046] It should be noted that the drawings in the specification are the contents of the specification. The structural shapes, connection relationships, coordination relationships, and positional relationships that can be obtained without any doubt in the drawings in the specification should be understood as the contents of the specification.

[0047] A precision conductive enclosure device, such as Figure 1 or Figure 2 or Figure 3 As shown, it includes a module A, which includes a conductive structure 1 with an enclosed functional area.

[0048] The conductive structure 1 of module A creates a resistance gradient through at least one of a conductive layer thickness gradient, a material composition gradient, and a cross-sectional shape gradient, or a combination thereof. For example, the conductive structure 1 can be composed of at least two metal materials, with a compositional gradient varying in steps or continuously along the extension of the enclosed area; the conductive layer thickness can vary in steps or continuously along the extension of the enclosed area; and the cross-section of the conductive structure 1 can be designed as a corrugated and / or trapezoidal structure with a gradually varying curvature. These designs enable the conductive structure 1 to have varying resistance values ​​at different locations, providing a foundation for subsequent dynamic control.

[0049] By regulating the parameters of the current flowing through the conductive structure 1 , dynamic regulation of electromagnetic shielding effectiveness, thermal management or signal integrity is achieved.

[0050] Module A of the precision conductive enclosure device consists of one or more independent conductive structures connected in parallel or series, each with independent electrode interfaces at both ends. Through a multi-channel controllable power supply or programmable power divider, independent current parameter control (such as current intensity, waveform, and frequency) can be applied to each conductive structure. This modular design allows each conductive structure to independently and dynamically adjust the resistance gradient according to actual needs, thereby optimizing the electromagnetic shielding effectiveness, thermal management effect, or signal integrity of the corresponding area, significantly improving the functional flexibility and spatial adaptability of the device.

[0051] Multiple conductive structures can divide module A into multiple functional areas. For example, in complex electronic devices, some areas focus on electromagnetic shielding, while others require precise thermal control. By independently controlling the resistance gradients of different conductive structures, "demand allocation" is achieved, avoiding functional conflicts when a single structure is controlled. Furthermore, in the face of changing electromagnetic environments or thermal loads, when a single conductive structure cannot meet all operating conditions, multiple structures can respond to needs in different time periods and regions. For example, when high-frequency electromagnetic interference occurs, the conductive structure in the corresponding area is activated to improve shielding performance, while other areas maintain low power operation.

[0052] In addition, if a certain conductive structure fails, it will not affect the normal operation of other conductive structures, thus ensuring the overall functional stability of the device.

[0053] The dynamic control mechanism is implemented as follows:

[0054] When regulating electromagnetic shielding effectiveness, a resistance gradient is used to guide high-frequency currents to form a dense skin effect layer on the surface of conductive structure 1, concentrating the high-frequency current and reducing the penetration of external electromagnetic interference. For example, in an environment with significant wireless signal interference, the device can utilize this principle to concentrate high-frequency interference currents on the surface of conductive structure 1, preventing them from affecting internal modules. Furthermore, the current frequency can be adjusted to match the skin depth with the micro-nanotopography of conductive structure 1's surface, enhancing the attenuation of interference in specific frequency bands. Electromagnetic waves in different frequency bands have different skin depths. By adjusting the current frequency to adapt the skin depth to the surface characteristics of conductive structure 1, specific interference can be better attenuated.

[0055] During thermal management control, by adjusting the current parameters of the conductive structure 1, by increasing the current, the high resistance of the conductive structure generates high temperature, thereby heating the low temperature area; and by reducing the current, the temperature generated by the high resistance of the conductive structure is reduced, thereby suppressing the continuous increase in the temperature of the high temperature area and realizing active temperature control.

[0056] In integrated circuits, by matching the resistance gradient with the high-frequency current impedance, the pulse current duty cycle is adjusted to adapt the equivalent resistance to the signal frequency, suppress signal reflection and crosstalk, ensure stable signal transmission, and improve the performance of the integrated circuit. When designing the conductive structure 1, the resistance gradient is carefully designed according to the frequency range and characteristics of the signal transmission so that the resistance values ​​at different positions of the conductive structure 1 are well matched with the high-frequency current. Taking high-speed digital signal transmission as an example, the resistance value is changed by adjusting the gradient distribution of the material components to reduce the signal reflection coefficient. Those skilled in the art can determine the optimal pulse current duty cycle under different signal frequencies using existing conventional experimental tests and simulation analysis. At a specific signal frequency, the duty cycle is continuously adjusted to find the value that best matches the equivalent resistance to the signal frequency, effectively suppressing signal reflection and crosstalk, and ensuring stable and accurate signal transmission.

[0057] Advantages of the present invention Compared with the prior art, the dynamic control mechanism of the precision conductive enclosure device based on the resistance gradient of the present invention has significant advantages. Traditional electromagnetic shielding measures are difficult to adjust dynamically, but the present application can flexibly respond to the actual electromagnetic environment and greatly improve the shielding effect. In terms of thermal management, it breaks through the limitations of passive heat dissipation, realizes precise active temperature control, and ensures the stable operation of electronic components. For signal integrity, it no longer relies on complex circuit design. Through simple and effective control methods, it significantly reduces signal distortion and improves the accuracy and speed of data transmission. Overall, it greatly improves the performance, stability and reliability of electronic equipment.

[0058] Specifically, if Figure 1 As shown, the precision conductive enclosure device also includes a module B which is a functional device 2, and the module B is arranged in the enclosed functional area of ​​the module A.

[0059] Module A provides electromagnetic interference, thermal management, and signal integrity protection for module B. Depending on the application scenario, module B can be a sensor, a radio frequency module, or a computing chip, etc., which is not limited by the present invention.

[0060] Among them, when thermal management is performed on module B, the current parameters are adjusted to change the Joule heat distribution according to the temperature change of module B. Multiple temperature sensors are distributed on module B to monitor the temperature in real time. When the temperature in a certain area is low (low temperature area), the control system increases the current of the conductive structure of module A corresponding to that area. Pulse width modulation technology is used to increase the current pulse width, so that the high resistance area generates more Joule heat and realizes directional heating compensation. Conversely, if the temperature in a certain area is too high (high temperature area), the current of the conductive structure of module A corresponding to that area is reduced to reduce heat generation. At the same time, combined with the optimization of the heat dissipation structure, such as increasing the area of ​​the heat dissipation fins or improving the heat dissipation medium, heat dissipation suppression in the high temperature area can be achieved. In this way, the temperature of module B can be accurately controlled to ensure that it works stably within the appropriate temperature range.

[0061] Specifically, the resistance gradient distribution is implemented in at least one of the following ways:

[0062] a) The conductive structure 1 is composed of at least two metal materials, and its composition changes in a stepwise or continuous manner along the extension direction of the enclosed area.

[0063] b) The thickness of the conductive layer changes in a step-like or continuous manner along the extending direction of the enclosed area.

[0064] c) The cross section of the conductive structure 1 is a corrugated and / or trapezoidal structure with a gradually changing curvature.

[0065] The resistance gradient distribution formed by the thickness of the conductive layer can change the distribution of current in the conductive structure 1, affecting the skin effect, thereby affecting the electromagnetic shielding effectiveness.

[0066] The resistance gradient distribution formed by the material components will change the electrical properties of the conductive structure 1, thereby affecting the shielding effect of electromagnetic waves in different frequency bands.

[0067] The resistance gradient distribution formed by the cross-sectional shape can change the current path and distribution, affecting the electromagnetic shielding effectiveness. For example, when the thickness of the conductive layer changes in a stepwise or continuous manner along the extension direction of the enclosed area, it can guide high-frequency current to form a dense layer of skin effect on the surface of the conductive structure 1, suppressing external electromagnetic interference.

[0068] For the solution of forming a resistance gradient by a gradient distribution of the thickness of the conductive layer, for example, photolithography and etching processes can be used. Taking a specific application scenario as an example, assuming that electromagnetic waves in a specific frequency band need to be efficiently shielded, first, through precise calculation and simulation, the variation curve of the thickness of the conductive layer along the extension direction of the enclosed area is determined. Photolithography technology is used to produce a photoresist layer with a predetermined pattern on the substrate material. The pattern corresponds to the change in the thickness of the conductive layer. Subsequently, an etching process is used to accurately etch the conductive material layer according to the photoresist pattern, thereby achieving a step or continuous change in the thickness of the conductive layer. During the etching process, parameters such as etching time and etching solution concentration are strictly controlled to ensure that the accuracy of the thickness of the conductive layer is within ±0.1μm to ensure the accuracy and stability of the resistance gradient.

[0069] When a material component gradient distribution is selected to form a resistance gradient, for example, physical vapor deposition (PVD) or chemical vapor deposition (CVD) technology can be used. For example, when preparing a conductive structure 1 composed of two metal materials, copper and silver, by precisely controlling the sputtering power and time of the copper and silver targets in the PVD equipment, the two metals are made to change in a step-by-step or continuous composition along the extension direction of the enclosed area during the deposition process. During the deposition process, spectral analysis technology is used to monitor the composition ratio of copper and silver in the deposited film in real time to ensure that the gradient change of the material composition meets the design requirements. At the same time, by adjusting process parameters such as deposition temperature and air pressure, the crystal quality and electrical properties of the film are optimized, making the change of the resistance gradient smoother and more stable.

[0070] If a gradient distribution of cross-sectional shape is adopted, for example, a conductive structure 1 having a specific cross-sectional shape can be manufactured using mold forming or 3D printing technology. Taking the manufacture of a corrugated conductive structure 1 with a cross-sectional curvature gradient as an example, first, a three-dimensional model of the corrugated structure is designed using computer-aided design (CAD) software to determine the law of curvature change and the dimensional parameters. Then, using 3D printing technology, a suitable conductive material (such as a conductive polymer or a composite material of metal powder and polymer) is selected, and the conductive structure 1 is printed out layer by layer according to the design model. During the printing process, by adjusting parameters such as printing speed, nozzle temperature and material extrusion amount, the shape and dimensional accuracy of the corrugated structure are precisely controlled to ensure the accuracy of the curvature gradient. For the method using mold forming, a high-precision mold is made according to the designed corrugated or trapezoidal structure, and the liquid conductive material is injected into the mold. During the curing process, it is ensured that the material evenly fills the mold to form the desired cross-sectional shape.

[0071] More specifically, if Figure 2 、 Figure 3 、 Figure 4 、 Figure 5 As shown, the physical form of the conductive structure 1 includes a fully enclosed type, a fully hollow type, or a partially open type.

[0072] When the conductive structure 1 is a hollow structure, the hollow aperture satisfies the electromagnetic shielding condition of d<<λ / 10, where d is the aperture size and λ is the wavelength of the electromagnetic wave to be shielded. This ensures that external electromagnetic interference is effectively shielded while not affecting the normal signal transmission of module B. For example, for electromagnetic waves with a frequency of 1GHz that need to be shielded (whose wavelength λ is approximately 300mm), the hollow aperture d is controlled within 3mm. By rationally designing the hollow channel of the hollow structure, the electromagnetic signal of module B can be directionally radiated through the hollow channel while effectively shielding external interference.

[0073] When the conductive structure 1 is an open structure, the shape of its opening is a cross or spiral, and the size of the open structure is in a nonlinear correspondence with the resonant frequency of the module B, thereby further optimizing the electromagnetic performance.

[0074] Specifically, module A includes a support substrate 3 composed of a ceramic-polymer composite material, or a silica-epoxy composite material, although this solution is not limited thereto. This effectively reduces structural stress issues caused by differential thermal expansion. Conductive structure 1 can be formed on the surface of support substrate 3 using a laser surface activation process or a fan-out packaging-like process, with a thickness of 2-500μm. Alternatively, conductive structure 1 is a self-supporting three-dimensional network architecture formed through a selective additive manufacturing process, ensuring the diversity and manufacturability of conductive structure 1.

[0075] More specifically, the type of energy interaction between module A and module B includes at least one of the following:

[0076] a) Interaction between electromagnetic energy and electromagnetic energy: Module A shields external interference through the hollow structure, and the electromagnetic signal of module B is directionally radiated through the hollow channels of the hollow structure.

[0077] b) Interaction between electrical energy and electromagnetic energy: Module A acts as an inductor and the current change of module B forms a bidirectional energy conversion.

[0078] c) Interaction between electrical energy and thermal energy: Active temperature control of module B is achieved through the Joule heat distribution generated by the resistance gradient of module A.

[0079] The specific interaction between electromagnetic energy lies in the fact that the hollow structure of module A not only provides shielding, but its specifically shaped hollow grid also forms electromagnetic coupling with the radiation of module B. When module B transmits an electromagnetic signal, some of the energy resonates with the induced current on the surface of module A through the hollow structure, prompting module A to convert the received electromagnetic energy into secondary radiation, which is superimposed on the original signal from module B, enhancing the radiation intensity in a specific direction and achieving enhanced interaction between the two modules.

[0080] The specific interaction between electrical energy and electromagnetic energy lies in the fact that module A acts as an inductor, generating bidirectional energy conversion with the current changes in module B. To achieve this, the shape and dimensions of module A's conductive structure 1 are optimized to achieve an appropriate inductance value. For example, the conductive structure 1 of module A is designed to be spiral, and the inductance value can be adjusted by adjusting parameters such as the number of turns, diameter, and spacing of the spiral.

[0081] More specifically, dynamic regulation includes at least one of the following mechanisms:

[0082] a) Electromagnetic shielding effectiveness control: A high-frequency current is guided by a resistance gradient to form a dense skin effect layer on the surface of conductive structure 1, suppressing external electromagnetic interference. Alternatively, the current frequency is adjusted to match the skin depth with the micro-nanotopography of conductive structure 1, enhancing the attenuation of interference in specific frequency bands.

[0083] b) Thermal management and control: Based on the temperature change of module B, the current parameters are adjusted to change the Joule heat distribution, directional heating is applied to compensate for low temperatures in high resistance areas, and heat dissipation is optimized to suppress high temperatures in low resistance areas.

[0084] c) Signal integrity control: The resistance gradient is matched to the impedance of the high-frequency current, and the duty cycle of the pulse current is adjusted to dynamically adapt the equivalent resistance of the impedance matching area to the signal frequency, thereby suppressing signal reflection and crosstalk.

[0085] More specifically, module B is a sensor or radio frequency module or computing chip. Module B is connected to the I / O pins of the main control chip of circuit board 4 through gold wire bonding or flip-chip bonding, or its power / signal pins are connected to the power supply network wiring of circuit board 4 through embedded copper pillars or microvias.

[0086] More specifically, the conductive structure 1 is connected to the power layer or ground layer of the circuit board 4 through a pad or a through-hole to form a low-impedance loop, and the current parameter control includes a pulse width modulation drive mode with a duty cycle adjustment range of 5%-95% and a frequency range of 1-10kHz.

[0087] Specifically, the device also includes an environmental status sensor for real-time monitoring of temperature, current intensity or electromagnetic field intensity parameters, and dynamically optimizes the matching strategy of resistance gradient distribution and current parameters through a closed-loop feedback algorithm.

[0088] Specifically, environmental status sensors (at least one of a temperature sensor, a current sensor, and an electromagnetic field strength sensor) are installed inside and / or around the device. The temperature sensor is a high-precision thermistor installed in a key heat-generating location of module B; the current sensor is a Hall effect sensor connected in series to the main current path of conductive structure 1; and the electromagnetic field strength sensor is an electromagnetic induction probe placed in an area around the device that is susceptible to electromagnetic interference.

[0089] The sensor transmits the real-time monitored temperature, current intensity, and electromagnetic field intensity parameters to the microcontroller. Based on the preset control target and a closed-loop feedback algorithm (such as the PID control algorithm), the microcontroller calculates the resistance gradient distribution and current parameter values ​​that need to be adjusted. For example, when the temperature sensor detects a temperature deviation, the existing PID control algorithm calculates the control variable (i.e., the adjustment value of the current parameter) based on the temperature deviation, the rate of change of the temperature deviation, and the integral term. By continuously adjusting parameters such as the proportional coefficient, integral time, and differential time, the performance of the PID controller is optimized, enabling it to respond quickly and accurately to changes in environmental parameters and achieve stable control of the device performance.

[0090] Specifically, the precision conductive enclosure device based on the modular structure is used as an independent packaging unit in at least one of the following scenarios:

[0091] a) Mobile terminal.

[0092] b) Radar module.

[0093] c) Integrated circuits.

[0094] For example, in a smartphone, this device is used to protect the processor and radio frequency module (module B). The conductive structure 1 of module A is partially open, with a spiral opening shape, which can effectively shield external electromagnetic interference while ensuring the normal transmission of radio frequency signals. Through a dynamic control mechanism, the electromagnetic shielding effectiveness, thermal management, and signal integrity are adjusted in real time according to the different working states of the mobile phone (such as calls, Internet access, games, etc.). When making calls, the electromagnetic shielding of the radio frequency band is enhanced to ensure clear voice signals; when running large-scale games, the heat dissipation of the processor is strengthened to ensure stable performance.

[0095] For example, in a radar system, module A utilizes a fully enclosed conductive structure 1. This gradient distribution of material components creates a resistance gradient, effectively shielding electromagnetic interference between modules within the radar. By leveraging the interaction between electrical and thermal energy, the radar's high-power transmit module is actively temperature-controlled, ensuring proper operation in harsh environments. Furthermore, signal integrity control ensures high-precision transmission and processing of radar signals, improving detection accuracy and reliability.

[0096] For example, in large-scale integrated circuits, multiple devices can be used as independent packaging units to protect chips with different functions. Environmental status sensors monitor the chip's operating status in real time, and a closed-loop feedback algorithm dynamically adjusts device parameters based on this monitored operating status data, improving the overall performance and stability of the integrated circuit.

[0097] Although the above describes the illustrative specific embodiments of the present invention so that those skilled in the art can understand the present invention, the present invention is not limited to the scope of the specific embodiments. For those skilled in the art, as long as various changes are within the spirit and scope of the present invention as defined and determined by the appended claims, all inventions and creations based on the concepts of the present invention are protected.

Claims

1. A precision conductive enclosure device, characterized in that: The module A comprises a conductive structure having an enclosed functional area; The conductive structure of the module A forms a resistance gradient by at least one of a conductive layer thickness gradient distribution, a material composition gradient distribution, and a cross-sectional shape gradient distribution; By regulating the parameters of the current flowing through the conductive structure, dynamic regulation of electromagnetic shielding effectiveness, thermal management or signal integrity can be achieved.

2. The precision conductive enclosure device according to claim 1, characterized in that: It also includes a module B, which is arranged in the enclosed functional area.

3. The precision conductive enclosure device according to claim 1, characterized in that: The resistance gradient distribution is implemented in at least one of the following ways: a) the conductive structure is composed of at least two metal materials, and its composition changes in a stepwise or continuous manner along the extension direction of the enclosed area; b) the thickness of the conductive layer changes in a stepwise or continuous manner along the extension direction of the enclosed area; c) The cross section of the conductive structure is a corrugated and / or trapezoidal structure with a gradually changing curvature.

4. The precision conductive enclosure device according to claim 2, characterized in that: The physical form of the conductive structure includes a fully enclosed type, a fully hollowed type or a partially open type; When the conductive structure is a hollow structure, the hollow aperture satisfies the electromagnetic shielding condition of d<<λ / 10, where d is the aperture size and λ is the wavelength of the electromagnetic wave to be shielded; When the conductive structure is an open structure, the shape of the opening is a cross or a spiral, and the size of the open structure and the resonant frequency of module B are in a nonlinear corresponding relationship.

5. The precision conductive enclosure device according to claim 1, characterized in that: The module A comprises a supporting substrate, wherein the supporting substrate is composed of a ceramic-polymer composite material or a silicon dioxide-epoxy resin composite material, and the conductive structure is formed on the surface of the supporting substrate by a laser surface activation process or a fan-out packaging-like process, with a thickness of 2-500 μm; Alternatively, the conductive structure is a self-supporting three-dimensional network structure formed by a selective additive manufacturing process.

6. The precision conductive enclosure device according to claim 4, characterized in that: The type of energy interaction between module A and module B includes at least one of the following: a) Interaction between electromagnetic energy and electromagnetic energy: Module A shields external interference through its hollow structure, while the electromagnetic signal of module B is directionally radiated through the hollow channels of the hollow structure; b) Interaction between electrical energy and electromagnetic energy: Module A acts as an inductor and the current change of module B forms a bidirectional energy conversion; c) Interaction between electrical energy and thermal energy: Active temperature control of module B is achieved through the Joule heat distribution generated by the resistance gradient of module A.

7. The precision conductive enclosure device according to claim 2, characterized in that: The dynamic control includes at least one of the following mechanisms: a) Electromagnetic shielding effectiveness control: High-frequency current is guided by a resistance gradient to form a dense skin effect layer on the surface of the conductive structure, suppressing external electromagnetic interference; or the current frequency is adjusted to match the skin depth with the micro-nanotopography of the conductive structure surface, thereby enhancing the attenuation of interference in specific frequency bands; b) Thermal management and control: Based on the temperature changes of module B, the current parameters are adjusted to change the Joule heat distribution, directional heating is used to compensate for low temperatures in high-resistance areas, and heat dissipation is optimized to suppress high temperatures in low-resistance areas; c) Signal integrity control: The resistance gradient is matched to the impedance of the high-frequency current, and the duty cycle of the pulse current is adjusted to dynamically adapt the equivalent resistance of the impedance matching area to the signal frequency, thereby suppressing signal reflection and crosstalk.

8. The precision conductive enclosure device according to claim 7, characterized in that: The module B is a sensor, a radio frequency module, or a computing chip. The module B is connected to the I / O pins of the main control chip of the circuit board through gold wire bonding or flip-chip bonding, or its power / signal pins are connected to the power supply network wiring of the circuit board through embedded copper pillars or microvias; The conductive structure is connected to the power layer or ground layer of the circuit board through a pad or a through hole to form a low-impedance loop.

9. The precision conductive enclosure device according to claim 1, characterized in that: The device also includes an environmental status sensor for real-time monitoring of temperature, current intensity or electromagnetic field intensity parameters, and dynamically optimizing the matching strategy of resistance gradient distribution and current parameters through a closed-loop feedback algorithm.

10. The precision conductive enclosure device according to claim 1, characterized in that: The precision conductive enclosure device is used as an independent packaging unit in at least one of the following scenarios: a) mobile terminals; b) Radar module; c) Integrated circuits.

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