Highly transparent ITO conductive glass and its preparation method

Abstract

The application relates to the technical field of conductive glass, in particular to high-transmittance ITO conductive glass and a preparation method thereof. After a glass substrate is cleaned, a first SiO2 film is sputtered on the surface of the glass substrate by using a magnetron sputtering technology, an ITO film is sputtered on the surface of the first SiO2 film, then a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film and a fifth SiO2 film are sputtered on the surface of the ITO film in sequence, and finally the high-transmittance ITO conductive glass is obtained. The method is simple and controllable, the materials are cheap and easy to obtain, and the method has good industrial application prospects. In the constructed structure, SiO2 and ITO cooperatively form a three-layer antireflection film system, and the visible light transmittance of the composite film layer can be obviously improved. Meanwhile, by introducing a multilayer ultrathin silver (Ag) film into the top layer SiO2, a composite nano conductive path is formed, the effective cross-layer transmission of carriers can be realized, and the surface conductive property of the surface layer SiO2 is good.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of conductive glass, and particularly relates to a high-transmittance ITO conductive glass and a preparation method thereof. BACKGROUND

[0002] With the rapid development of information display technology, optoelectronic devices and intelligent terminal equipment, the performance of transparent conductive materials is required to be higher and higher. As the most widely used transparent conductive film material at present, indium tin oxide (ITO) is widely used in liquid crystal display (LCD), organic light-emitting diode display (OLED), touch screen, electrochromic device, solar cell, photodetector and other fields due to its excellent conductivity and high transmittance. Especially in flat panel display devices, such as plasma display (PDP) and touch sensing devices, ITO conductive glass is indispensable as a core transparent electrode material. However, although ITO has a high carrier concentration and good visible light transmittance, its performance still has bottlenecks in many aspects. First, the refractive index of ITO material itself is relatively high (usually 2.0-2.2), which is quite different from the refractive index of air and glass, resulting in strong Fresnel reflection at the interface, causing significant loss of visible light, affecting the optical display quality of the device, especially the visibility under sunlight. Secondly, the electron mobility of ITO is limited, and it often exists in the form of single layer or simple stack in the device structure, which is easy to form an interface potential barrier for carrier transport, thereby limiting the uniform conductivity and response speed of the device in a large area. In addition, the traditional ITO thin film preparation technology often needs to sacrifice its conductivity while improving the transmittance, which makes it difficult to balance high transmittance and low sheet resistance at the same time.

[0003] In view of the above problems, the prior art has tried to improve the comprehensive performance of ITO conductive glass by increasing the anti-reflection film, optimizing the interlayer design or introducing a composite film system. However, these designs effectively improve the light transmittance of ITO conductive glass, but the composite film layer is an insulating dielectric film layer with low refractive index, which makes the ITO conductive glass lose its conductivity after compounding. SUMMARY

[0004] To solve the above problems, the purpose of the present application is to provide a high-transmittance ITO conductive glass and a preparation method thereof. By reasonably regulating the film layer structure and using the "carrier cross-layer transfer technology", the interface resistance is significantly reduced, the contact quality between the film layers is improved, and the electronic transport barrier existing in the traditional ITO multilayer structure is effectively broken. A new technical path is provided for preparing ITO conductive glass with high performance and high light transmittance, which has important theoretical value and application prospect.

[0005] The application discloses a preparation method of high-transmittance ITO conductive glass.

[0006] (1) after cleaning the glass substrate, a first SiO2 film is sputtered on the surface of the glass substrate by using a magnetron sputtering technology;

[0007] (2) an ITO film is sputtered on the surface of the first SiO2 film by using the magnetron sputtering technology;

[0008] (3) a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film and a fifth SiO2 film are sequentially sputtered on the surface of the ITO film by using the magnetron sputtering technology, and finally the high-transmittance ITO conductive glass is obtained.

[0009] Further, the thickness of the first SiO2 film in step (1) is 80-130 nm.

[0010] Further, in the magnetron sputtering in step (1), the target material used is SiO2 target material, the deposition temperature is room temperature, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

[0011] Further, the thickness of the ITO film in step (2) is 80-130 nm.

[0012] Further, in the magnetron sputtering in step (2), the target material used is ITO target material, the deposition temperature is 300-400 DEG C, the sputtering gas is pure argon gas, the sputtering gas pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

[0013] Further, the thicknesses of the second SiO2 film, the third SiO2 film, the fourth SiO2 film and the fifth SiO2 film in step (3) are 20-30 nm.

[0014] Further, in the sputtering of the second SiO2 film, the third SiO2 film, the fourth SiO2 film and the fifth SiO2 film in step (3), the target material used is SiO2 target material, the deposition temperature is room temperature, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

[0015] Further, the thicknesses of the first Ag film, the second Ag film and the third Ag film in step (3) are 0.5 nm.

[0016] Further, in the step (3), the target material used for sputtering the first Ag film, the second Ag film and the third Ag film is a silver target material, the deposition temperature is room temperature, the sputtering gas is pure argon, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 20-40 W.

[0017] The application further provides a high-transmittance ITO conductive glass prepared by the preparation method.

[0018] Compared with the prior art, the application has the following beneficial effects:

[0019] (1) The method has the advantages of simple process, strong controllability, cheap and easily available materials, and good industrial application prospect. In the constructed structure, SiO2 and ITO cooperatively form a three-layer antireflection film system, which can significantly improve the visible light transmittance of the composite film layer. Meanwhile, SiO2 is an insulating material, and its surface itself does not have conductivity. By introducing a plurality of super-thin silver (Ag) films into the top layer of SiO2, a composite nano-conductive path is formed, which can realize effective cross-layer transmission of carriers, thereby endowing the surface layer of SiO2 with good surface conductivity.

[0020] (2) The resistance can be accurately adjusted by adjusting the thickness of the ITO layer. The conductive glass based on the structure has excellent photoelectric performance, and the surface resistance can be controlled to be 10-20 Ω / □, and the visible light transmittance is as high as 91-94%. The structure fully considers the high light transmittance and excellent conductivity, and provides an effective solution for low-cost and high-performance transparent conductive glass. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a schematic diagram of the cross-sectional structure of the high-transmittance ITO conductive glass of the application;

[0022] Figure 2 is a light transmittance spectrum of the high-transmittance ITO conductive glass in Example 1 of the application. DETAILED DESCRIPTION

[0023] In order to better understand the content of the application, the application will be further described below in combination with specific examples and drawings. The following examples are implemented based on the technology of the application, and detailed implementation modes and operation steps are given, but the protection scope of the application is not limited to the following examples.

[0024] Please combine Figure 1 .

[0025] Example 1:

[0026] (1) After cleaning the glass substrate, a first SiO2 film with a thickness of 120 nm is sputtered on the surface of the glass substrate by using the magnetron sputtering technology, the deposition temperature is room temperature, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 100 W;

[0027] (2) After step (1) is completed, an ITO film with a thickness of 120 nm is sputtered on the surface of the first SiO2 film by using the magnetron sputtering technology, the deposition temperature is 350°C, the sputtering gas is pure argon gas, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 100 W;

[0028] (3) After step (2) is completed, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film, and a fifth SiO2 film are sputtered on the surface of the ITO film in sequence by using the magnetron sputtering technology, the deposition temperature is room temperature, the thicknesses of the second, third, fourth, and fifth SiO2 films are all 21 nm, the sputtering gas is argon-oxygen mixed gas when sputtering the second, third, fourth, and fifth SiO2 films, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 100 W; the thicknesses of the first, second, and third Ag films are all 0.5 nm, the sputtering gas is pure argon gas when sputtering the first, second, and third Ag films, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 30 W, and finally a high-transmittance ITO conductive glass is obtained.

[0029] It is detected that the surface resistance of the obtained high-transmittance ITO conductive glass is 12.1 Ω / □, and the light transmittance is 92.3%.

[0030] Figure 2 It is the light transmittance spectrum of the high-transmittance ITO conductive glass in this embodiment.

[0031] Embodiment 2:

[0032] (1) After cleaning the glass substrate, a first SiO2 film with a thickness of 80 nm is sputtered on the surface of the glass substrate by using the magnetron sputtering technology, the deposition temperature is room temperature, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 0.8 Pa, and the sputtering power is 80 W;

[0033] (2) After step (1) is completed, an ITO film with a thickness of 80 nm is sputtered on the surface of the first SiO2 film by using the magnetron sputtering technology, the deposition temperature is 300°C, the sputtering gas is pure argon gas, the sputtering gas pressure is 0.8 Pa, and the sputtering power is 80 W;

[0034] (3) After step (2) is completed, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film, and a fifth SiO2 film are sputtered on the surface of the ITO film in sequence by using the magnetron sputtering technology, and the deposition temperature is room temperature; the thicknesses of the second, third, fourth, and fifth SiO2 films are all 20 nm; when the second, third, fourth, and fifth SiO2 films are sputtered, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 0.8 Pa, and the sputtering power is 80 W; the thicknesses of the first, second, and third Ag films are all 0.5 nm; when the first, second, and third Ag films are sputtered, the sputtering gas is pure argon gas, the sputtering gas pressure is 0.8 Pa, and the sputtering power is 20 W; and finally, the high-transmittance ITO conductive glass is obtained.

[0035] It is detected that the surface resistance of the obtained high-transmittance ITO conductive glass is 18.9 Ω / □, and the light transmittance is 92.7%.

[0036] Example 3

[0037] (1) After the glass substrate is cleaned, a first SiO2 film with a thickness of 130 nm is sputtered on the surface of the glass substrate by using the magnetron sputtering technology, the deposition temperature is room temperature, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.2 Pa, and the sputtering power is 120 W;

[0038] (2) After step (1) is completed, an ITO film with a thickness of 130 nm is sputtered on the surface of the first SiO2 film by using the magnetron sputtering technology, the deposition temperature is 400°C, the sputtering gas is pure argon gas, the sputtering gas pressure is 1.2 Pa, and the sputtering power is 80 W;

[0039] (3) After step (2) is completed, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film, and a fifth SiO2 film are sputtered on the surface of the ITO film in sequence by using the magnetron sputtering technology, and the deposition temperature is room temperature; the thicknesses of the second, third, fourth, and fifth SiO2 films are all 30 nm; when the second, third, fourth, and fifth SiO2 films are sputtered, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.2 Pa, and the sputtering power is 120 W; the thicknesses of the first, second, and third Ag films are all 0.5 nm; when the first, second, and third Ag films are sputtered, the sputtering gas is pure argon gas, the sputtering gas pressure is 1.2 Pa, and the sputtering power is 30 W; and finally, the high-transmittance ITO conductive glass is obtained.

[0040] It is detected that the surface resistance of the obtained high-transmittance ITO conductive glass is 11.5 Ω / □, and the light transmittance is 91.1%.

[0041] Example 4

[0042] (1) After cleaning the glass substrate, a first SiO2 film with a thickness of 120 nm is sputtered on the surface of the glass substrate by using the magnetron sputtering technology, the deposition temperature is room temperature, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 110 W;

[0043] (2) After step (1) is completed, an ITO film with a thickness of 120 nm is sputtered on the surface of the first SiO2 film by using the magnetron sputtering technology, the deposition temperature is 350°C, the sputtering gas is pure argon gas, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 100 W;

[0044] (3) After step (2) is completed, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film, and a fifth SiO2 film are sequentially sputtered on the surface of the ITO film by using the magnetron sputtering technology, the deposition temperature is room temperature, the thicknesses of the second, third, fourth, and fifth SiO2 films are all 20 nm, when sputtering the second, third, fourth, and fifth SiO2 films, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 80 W; the thicknesses of the first, second, and third Ag films are all 0.5 nm, when sputtering the first, second, and third Ag films, the sputtering gas is pure argon gas, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 20 W, thereby finally obtaining high-transmittance ITO conductive glass.

[0045] It is detected that the surface resistance of the obtained high-transmittance ITO conductive glass is 12.3 Ω / □, and the light transmittance is 92.6%.

[0046] Comparative Example 1

[0047] (1) This step is the same as step (1) in Example 1;

[0048] (2) This step is the same as step (2) in Example 1;

[0049] (3) After step (2) is completed, a second SiO2 film, a third SiO2 film, a fourth SiO2 film, and a fifth SiO2 film are sequentially sputtered on the surface of the ITO film by using the magnetron sputtering technology, the deposition temperature is room temperature, the thicknesses of the second, third, fourth, and fifth SiO2 films are all 21 nm, when sputtering the second, third, fourth, and fifth SiO2 films, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 100 W, thereby finally obtaining ITO conductive glass.

[0050] It is detected that the obtained ITO conductive glass is not conductive, and the light transmittance is 92.9%.

[0051] Comparative Example 2

[0052] (1) The step is the same as step (1) in Example 1;

[0053] (2) The step is the same as step (2) in Example 1, and finally ITO conductive glass is obtained.

[0054] The surface resistance of the obtained ITO conductive glass is 13.8 Ω / D, and the light transmittance is 84.3%.

[0055] Comparative Example 3:

[0056] (1) The step is the same as step (1) in Example 1;

[0057] (2) The step is the same as step (2) in Example 1,

[0058] (3) After step (2) is completed, a second SiO2 film, a first Ag film, and a third SiO2 film are successively sputtered on the surface of the ITO film by using a magnetron sputtering technique. The deposition temperature is room temperature, and the thicknesses of the second and third SiO2 films are both 21 nm. When sputtering the second and third SiO2 films, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 100 W. The thickness of the first Ag film is 0.5 nm. When sputtering the first Ag film, the sputtering gas is pure argon gas, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 30 W. Finally, ITO conductive glass is obtained.

[0059] The surface resistance of the obtained ITO conductive glass is 12.5 Ω / D, and the light transmittance is 86.6%.

[0060] Comparative Example 4:

[0061] (1) The step is the same as step (1) in Example 1;

[0062] (2) The step is the same as step (2) in Example 1,

[0063] (3) After step (2) is completed, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, and a fourth SiO2 film are successively sputtered on the surface of the ITO film by using a magnetron sputtering technique. The deposition temperature is room temperature, and the thicknesses of the second, third, and fourth SiO2 films are all 21 nm. When sputtering the second, third, and fourth SiO2 films, the sputtering gas is argon-oxygen mixed gas, the argon-oxygen ratio is 20:1, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 100 W. The thicknesses of the first and second Ag films are both 0.5 nm. When sputtering the first and second Ag films, the sputtering gas is pure argon gas, the sputtering gas pressure is 1.0 Pa, and the sputtering power is 30 W. Finally, ITO conductive glass is obtained.

[0064] The surface resistance of the ITO conductive glass obtained by the detection is 12.3 Ω / □, and the light transmittance is 88.7%.

[0065] Table 1 is the photoelectric performance test data of the high-transmittance ITO conductive glass prepared in Examples 1-4 and the ITO conductive glass prepared in Comparative Examples 1-4.

[0066] Table 1

[0067]

[0068] As shown in Table 1, by interlacing the SiO2 and Ag layers at a certain thickness without affecting the conductivity of the ITO glass, the light transmittance of the conductive glass can be effectively improved, and is above 91%.

[0069] The above description is only examples of the present application, and does not limit the present application in any form. The present application can also have other forms of examples according to the above structure and function, and will not be listed one by one. Therefore, any skilled person in the art, without departing from the scope of the technical scheme of the present application, according to the technical essence of the present application, any simple modification, equivalent change and modification of the above examples, still belongs to the scope of the technical scheme of the present application.

Claims

1. A method for preparing high-transmittance ITO conductive glass, characterized in that, Specifically, the following steps are included: (1) After cleaning the glass substrate, a first SiO2 thin film is sputtered on the surface of the glass substrate using magnetron sputtering technology. The thickness of the first SiO2 thin film is 80-130 nm. (2) ITO film is sputtered on the surface of the first SiO2 film using magnetron sputtering technology. The thickness of the ITO film is 80-130 nm. (3) Using magnetron sputtering technology, a second SiO2 film, a first Ag film, a third SiO2 film, a second Ag film, a fourth SiO2 film, a third Ag film, and a fifth SiO2 film are sequentially sputtered on the surface of the ITO film to finally obtain a high-transmittance ITO conductive glass.

2. The method for preparing high-transmittance ITO conductive glass as described in claim 1, characterized in that, In step (1), the target material used for magnetron sputtering is SiO2, the deposition temperature is room temperature, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

3. The method for preparing high-transmittance ITO conductive glass as described in claim 1, characterized in that, In step (2), the magnetron sputtering uses an ITO target, a deposition temperature of 300-400℃, a sputtering gas of pure argon, a sputtering pressure of 0.8-1.2Pa, and a sputtering power of 80-120W.

4. The method for preparing high-transmittance ITO conductive glass as described in claim 1, characterized in that, In step (3), the thickness of the second SiO2 film, the third SiO2 film, the fourth SiO2 film, and the fifth SiO2 film is 20-30 nm.

5. The method for preparing high-transmittance ITO conductive glass as described in claim 1, characterized in that, In step (3), when sputtering the second, third, fourth, and fifth SiO2 films, the target material used is a SiO2 target material, the deposition temperature is room temperature, the sputtering gas is an argon-oxygen mixture with an argon-oxygen ratio of 20:1, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 80-120 W.

6. The method for preparing high-transmittance ITO conductive glass as described in claim 1, characterized in that, In step (3), the thickness of the first Ag film, the second Ag film, and the third Ag film is 0.5 nm.

7. The method for preparing high-transmittance ITO conductive glass as described in claim 1, characterized in that, In step (3), when sputtering the first Ag film, the second Ag film, and the third Ag film, the target material used is a metallic silver target, the deposition temperature is room temperature, the sputtering gas is pure argon, the sputtering pressure is 0.8-1.2 Pa, and the sputtering power is 20-40 W.

8. The high-transmittance ITO conductive glass obtained by any one of the preparation methods described in claims 1 to 7.

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