Pressing plate type spraying process for high-precision semiconductor equipment

Abstract

According to the pressing plate type spraying process for the high-precision semiconductor equipment, through innovative combination of an intelligent dynamic pressing plate and a pulse alternating spraying mechanism, nanoscale deposition precision control is achieved. The process comprises the following steps: performing plasma activation on the surface of a substrate; scanning the surface topological structure by using a pressure control array driven by the MEMS; a partition pressure distribution diagram and spraying parameters are generated; heating the substrate to a preset temperature; the intelligent dynamic pressing plate is controlled to make contact with the substrate; starting a pulse spraying system; monitoring in real time and dynamically adjusting parameters; and releasing the pressure and cooling after the preset film thickness is reached. According to the process, a pressure control point array with the density of 64 / cm < 2 > is adopted. According to the method, the film thickness control precision (+ / -1 angstrom), the surface uniformity (99.8%) and the material utilization rate (gt; the method is suitable for high-end application scenes of various semiconductor materials such as silicon-based integrated circuits, gallium arsenide devices and silicon carbide power devices, and the key bottleneck problem of a traditional spraying technology is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and in particular to a high-precision semiconductor device pressure plate type spraying process. Background Art

[0002] In the semiconductor device manufacturing process, thin film deposition is one of the key process steps, which directly affects the performance and reliability of the device. As the feature size of integrated circuits continues to shrink and the three-dimensional structure becomes increasingly complex, higher requirements are placed on the thin film deposition process, especially in terms of film uniformity, coverage, material utilization and precise control. At present, the commonly used thin film deposition technologies in the semiconductor industry mainly include physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc., and sputtering technology, as a special physical deposition method, has been widely used in specific application fields due to its advantages such as simple equipment structure, easy control of process parameters, and a wide range of material selection.

[0003] Traditional spraying technologies mainly include atmospheric pressure spraying, reduced pressure spraying, and ultrasonic-assisted spraying. Atmospheric pressure spraying is simple to operate, but the uniformity of the deposited film is difficult to control and is generally only used in applications where precision is not a high requirement. Reduced pressure spraying improves film quality by spraying in a low-pressure environment, but still faces problems such as significant edge effects and low step coverage. Ultrasonic-assisted spraying improves material atomization efficiency by introducing ultrasonic vibrations, but its adaptability to complex surface structures is insufficient.

[0004] The existing technology still has obvious deficiencies in the following aspects:

[0005] Conventional sputtering technology has difficulty achieving nanometer-scale thickness uniformity control, especially on large-size wafers, where the thickness difference between the edge and center areas usually reaches 5-10%, which cannot meet the requirements of advanced processes. For structures with high aspect ratios such as grooves and through-holes, the sidewall and bottom coverage of conventional sputtering technology is generally low, and the formed films are prone to defects such as breakage and discontinuity. The material utilization rate of conventional sputtering systems is usually between 50-70%, and a large amount of precious materials are wasted, especially for precious metal materials, which significantly increases production costs. Existing technologies have difficulty achieving atomic-level precise control of film thickness, and the control accuracy of film thickness is usually at the nanometer level, which cannot meet the requirements of certain special applications. Existing sputtering systems have limited adaptability to different materials and different substrate types. When changing materials or substrates, a large number of parameters usually need to be readjusted, affecting production efficiency. Most existing sputtering systems lack effective online monitoring and feedback adjustment mechanisms, making it difficult to achieve dynamic optimization of the deposition process.

[0006] In summary, there is an urgent need to develop a new, high-precision sputtering process that can ensure deposition accuracy and uniformity at the nanometer or even atomic level, adapt to complex three-dimensional structures, and improve material utilization to meet the stringent requirements of the modern semiconductor industry. This need is particularly pressing in areas such as advanced logic devices, high-performance analog devices, power semiconductors, and high-frequency microwave devices. This present invention addresses these technical deficiencies by proposing an innovative pressure-platen sputtering process solution. Summary of the Invention

[0007] Based on the above objectives, the present invention provides a high-precision semiconductor device pressure plate type spraying process comprising the following steps:

[0008] Step 1: performing plasma activation treatment on the surface of the semiconductor substrate;

[0009] Step 2: Use a pressure control array driven by a micro-electromechanical system to perform a three-dimensional profile scan on the substrate surface to obtain surface topological structure information;

[0010] Step 3: Generate a partition pressure distribution map and spraying parameters based on the surface topology information;

[0011] Step 4: heating the substrate to a preset temperature;

[0012] Step 5: According to the zone pressure distribution diagram, the intelligent dynamic pressure plate is controlled to contact the substrate according to the preset pressure distribution;

[0013] Step 6: Start the pulse alternating spraying system to spray the target material onto the substrate surface at a preset frequency;

[0014] Step 7: Monitor the film thickness and deposition uniformity in real time through the online monitoring system, and dynamically adjust the pressure parameters and spraying parameters according to the monitoring results;

[0015] Step 8: When the film thickness reaches the preset value, gradually release the pressure according to the preset curve and control the cooling of the substrate.

[0016] Furthermore, the intelligent dynamic platen system includes:

[0017] A micro-electromechanical system-driven pressure control array with an array density of 30-100 control points per square centimeter. The pressure of each control point can be independently adjusted within the range of 0-10N with an adjustment accuracy of ±0.01N.

[0018] The pressing plate is made of silicon carbide composite material with a surface flatness of ±2nm.

[0019] Furthermore, the pulse alternating spraying system includes:

[0020] High-precision nozzle array, nozzle aperture is 3-10 microns, nozzle array distribution density is 15-40 per square centimeter;

[0021] High-frequency pulse controller, which can achieve an adjustable pulse frequency of 10-1000Hz and a minimum pulse width of 5-100 microseconds.

[0022] Furthermore, the process includes a multiphase fluid channel system comprising:

[0023] main fluid storage tank, multiphase fluid mixer, spiral fluid channel and vortex generator;

[0024] The spiral fluid channel adopts a double helix structure, and the inner wall is treated with hydrophobic material;

[0025] The eddy current generator adopts ultrasonic excitation and the operating frequency range is 20-60kHz.

[0026] Furthermore, the online monitoring system includes:

[0027] Optical interferometer thickness gauge with a measurement accuracy of ±0.5 angstroms;

[0028] Infrared thermal imager with a temperature resolution of 0.03°C;

[0029] A real-time image processing system based on deep learning algorithms is used to analyze deposition uniformity and generate parameter adjustment instructions.

[0030] Furthermore, the plasma activation treatment uses high-purity inert gas with a gas pressure of 5-15 Pa, a radio frequency power of 100-300 W, and a treatment time of 30-60 seconds.

[0031] Furthermore, the steps of dynamically adjusting the pressure parameters and the spraying parameters include:

[0032] When it is detected that the deposition rate deviation in a local area exceeds a preset threshold, the system automatically adjusts the pressure value and / or injection frequency and / or pulse width of the corresponding area;

[0033] The preset threshold is 1-5% of the deposition rate deviation.

[0034] Furthermore, the step of gradually releasing the pressure according to a preset curve adopts an exponential decay curve with a time constant of 3-10 seconds;

[0035] The step of controlling the cooling of the substrate adopts a stepwise or constant rate cooling curve with a cooling rate of 1-5°C / min.

[0036] Furthermore, the process has the ability to adaptively control material properties, including:

[0037] Built-in material database, including the optimal process parameters for common semiconductor materials;

[0038] Algorithm module for inferring initial parameters based on the physical and chemical properties of materials;

[0039] A self-learning algorithm module that fine-tunes parameters through small sample tests.

[0040] Furthermore, the process is applied to at least one of the following scenarios:

[0041] Metal interconnection layer sputtering for silicon-based integrated circuits;

[0042] Insulation layer spraying of GaAs-based high-frequency devices;

[0043] Metal contact layer sputtering for silicon carbide power devices.

[0044] Beneficial effects of the present invention: The high-precision semiconductor equipment pressure plate spraying process provided by the present invention has achieved a major breakthrough in the semiconductor thin film deposition process through the innovative combination of intelligent dynamic pressure plate technology and pulse alternating spraying mechanism: the film thickness control accuracy is improved to ±1 angstrom level, the surface uniformity reaches 99.8%, the material utilization rate is increased to more than 95%, and a high coverage rate (98%) of complex three-dimensional structure surfaces can be achieved. The process adopts multi-point pressure precision control and real-time monitoring feedback system, which can adapt to different substrates and material properties. It is suitable for high-end application scenarios of various semiconductor materials, significantly improves device performance and yield, reduces production costs, and provides a comprehensive technical solution to solve the key bottleneck problems faced by traditional spraying technology. It has important industrial application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only for the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0046] Figure 1 Schematic diagram of the overall structure of the spraying process system of the present invention;

[0047] Figure 2 This is a schematic diagram of the connection structure of the multiphase fluid channel system of the present invention;

[0048] Figure 3 Schematic diagram of temperature field distribution control of the present invention;

[0049] Figure 4 Schematic diagram of the spraying process of the present invention;

[0050] Figure 5 Schematic diagram comparing the results of copper interconnection layer spraying of silicon-based integrated circuits in Example 1 of the present invention. DETAILED DESCRIPTION

[0051] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments. It is also noted that, to provide a more detailed description, the following embodiments are best and preferred embodiments, and those skilled in the art may employ alternative methods for implementing certain known technologies. Furthermore, the accompanying drawings are intended only to provide a more detailed description of the embodiments and are not intended to limit the present invention.

[0052] It should be noted that references in the specification to "one embodiment," "an embodiment," "an exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include specific features, structures, or characteristics, but not every embodiment necessarily includes such specific features, structures, or characteristics. In addition, when specific features, structures, or characteristics are described in conjunction with an embodiment, it is within the knowledge of persons skilled in the relevant art to implement such features, structures, or characteristics in conjunction with other embodiments (whether or not explicitly described).

[0053] In general, terms can be understood, at least in part, from their use in context. For example, depending at least in part on the context, the term "one or more" as used herein can be used to describe any feature, structure, or characteristic in the singular sense, or can be used to describe a combination of features, structures, or characteristics in the plural sense. Additionally, the term "based on" can be understood as not necessarily intended to convey an exclusive set of factors, but can instead, depending at least in part on the context, allow for the presence of other factors that are not necessarily explicitly described.

[0054] Implementation method one:

[0055] See Figure 1

[0056] Basic system structure

[0057] The high-precision semiconductor equipment pressure plate type spraying process system of the present invention mainly consists of the following parts:

[0058] 1. Intelligent dynamic pressing plate subsystem;

[0059] 2. Pulse alternating spraying subsystem;

[0060] 3. Multiphase fluid channel subsystem;

[0061] 4. Temperature field precise control subsystem;

[0062] 5. Online monitoring and feedback system;

[0063] 6. Central control system;

[0064] The intelligent dynamic pressure plate subsystem utilizes a microelectromechanical system (MEMS)-driven pressure control array. Each array unit can be independently controlled, with an array density of 64 control points per square centimeter. The pressure at each control point can be precisely adjusted within a range of 0-10N, with an adjustment accuracy of ±0.01N. The pressure plate is made of a specially synthesized silicon carbide composite material with excellent high-temperature and corrosion resistance, and a surface flatness of ±2nm.

[0065] The pulsed alternating spraying subsystem includes a high-precision nozzle array made of a special alloy with an aperture of up to 5 microns and a density of 25 nozzles per square centimeter. The system is equipped with a high-frequency pulse controller that enables adjustable pulse frequencies from 10 to 1000 Hz, with a minimum pulse width of 5 microseconds.

[0066] See Figure 2 The multiphase fluid channel subsystem consists of a main fluid reservoir, a multiphase fluid mixer, a spiral fluid channel, and a vortex generator. The spiral fluid channel utilizes a double-helix structure, and its inner wall is treated with a hydrophobic material to prevent material adhesion. The vortex generator uses ultrasonic excitation, operating in the frequency range of 20-60kHz.

[0067] See Figure 3 The precise temperature field control subsystem consists of a micro-heating element array, a temperature sensor network, and a cooling system. The temperature sensors are platinum resistance type, with an accuracy of ±0.05°C and a response time of less than 50ms. The micro-heating elements utilize carbon nanotube heating technology, with 16 independent control units arranged per square centimeter.

[0068] The online monitoring and feedback system includes an optical interferometer thickness gauge, an infrared thermal imager, and a real-time image processing system. The optical interferometer thickness gauge uses the principle of white light interferometry and has a measurement accuracy of ±0.5 angstroms. The infrared thermal imager has a resolution of 640×480 pixels and a temperature resolution of 0.03°C.

[0069] The central control system is built on an embedded real-time operating system, equipped with a dedicated AI processing unit, and uses deep learning algorithms to optimize process parameters with a response time of less than 10ms.

[0070] Implementation method 2:

[0071] See Figure 4 , process control

[0072] The process control of the present invention includes the following key stages:

[0073] During the pretreatment phase, the substrate undergoes plasma activation using argon plasma at a density of 10^11-10^12 / cm³ for 30-60 seconds. Subsequently, an intelligent platen system scans the substrate surface in three dimensions at a speed of 10μm / s, with an accuracy of ±5nm. Based on the scan data, the system generates a pressure distribution map and a table of deposition parameters.

[0074] During the deposition phase, the system first adjusts the substrate temperature to the required process temperature (typically 150-300°C, with an accuracy of ±0.1°C). The dynamic pressure platen then contacts the substrate according to preset parameters, with an initial contact pressure of 0.5N / point, which is then gradually adjusted to the optimal pressure based on the substrate's characteristics (typically 1-5N / point). Pulsed deposition begins with an initial frequency of 100Hz and a pulse width of 50 microseconds, which is then dynamically adjusted based on real-time monitoring results.

[0075] During the online monitoring and adjustment phase, an optical interferometer system monitors film thickness changes at a frequency of 10 times per second, transmitting the data to an AI algorithm analysis unit. If a deposition rate deviation exceeding 3% is detected in a local area, the system automatically adjusts the pressure and sputtering parameters for that area. Simultaneously, an infrared thermal imaging system monitors the temperature distribution, ensuring that the maximum temperature difference does not exceed ±1°C.

[0076] During the post-processing phase, the system gradually releases pressure according to a preset pressure-release curve (typically an exponential decay curve with a time constant of 5 seconds) to prevent microcracks caused by stress concentration. Simultaneously, the substrate temperature is controlled to drop according to a cooling curve determined by the material's characteristics (typically a cooling rate of 2-5°C / minute). Finally, an automated cleaning system activates to recycle unused material, achieving a recovery efficiency exceeding 95%.

[0077] Implementation method three: adaptive regulation of multiple materials

[0078] In view of the characteristics of different semiconductor materials, the present invention provides a material property adaptive control function:

[0079] For silicon-based materials, the system default settings are temperature range of 220-250°C, pressure range of 2-3N / point, and pulse frequency of 150Hz.

[0080] For GaAs materials, the system default settings are temperature range of 180-210°C, pressure range of 1.5-2.5N / point, and pulse frequency of 200Hz.

[0081] For silicon carbide materials, the system default settings are temperature range of 280-320°C, pressure range of 3-5N / point, and pulse frequency of 120Hz.

[0082] The system features a built-in materials database containing optimal process parameters for 20 common semiconductor materials, and continuously optimizes these parameters through a self-learning algorithm. When a new material is input, the system first infers initial parameters based on the material's physical and chemical properties. It then fine-tunes these parameters through small sample testing to ultimately determine the optimal process parameters. Specific embodiments

[0084] See Figure 5

[0085] Example 1: Metal Interconnect Layer Sputtering Process in Silicon-Based Integrated Circuit Manufacturing

[0086] In an embodiment of performing copper interconnection layer sputtering on a 12-inch silicon wafer, the specific steps are as follows:

[0087] Wafer pretreatment: Place the wafer in a plasma processing chamber, introduce high-purity argon gas (purity 99.9999%), set the gas pressure to 10Pa, set the RF power to 200W, and process for 45 seconds to activate the wafer surface.

[0088] Surface scanning: The wafer surface is scanned at a speed of 8μm / s using an intelligent platen system to obtain a 3D surface profile, with particular attention paid to the depth distribution of the etched grooves and vias (typical depth range 100-500nm).

[0089] Parameter Generation: Based on the scan results, the system generates a zoned pressure distribution map, dividing the wafer into five concentric ring zones. The pressure gradients from center to edge are 2.8N, 2.6N, 2.5N, 2.7N, and 3.0N (at each control point) to compensate for edge effects. The sputtering parameters are also set: copper source temperature 350°C, substrate temperature 230°C, pulse frequency 180Hz, and pulse width 40μs.

[0090] During the sputtering process, the system first heats the substrate to 230°C. Once the temperature stabilizes (temperature fluctuation is less than ±0.1°C), the intelligent pressure plate contacts the wafer using a preset pressure profile. The pulsed sputtering system is then activated, spraying copper material onto the wafer surface at a frequency of 180Hz. A multiphase fluid system ensures uniform material delivery, with a flow rate set at 2.5ml / minute.

[0091] Real-time monitoring: An optical interferometer system monitors the film thickness growth rate and detects a 4.5% increase in the edge region (within 5 mm of the wafer edge). The system automatically adjusts the pressure in this area from 3.0 N to 3.2 N and reduces the jet flow rate by 5% to restore uniform deposition rate. The system stops deposition when the film thickness reaches the preset value of 350 nm (uniformity controlled within ±2 nm).

[0092] Post-processing: The system gradually releases pressure according to an exponential decay curve (time constant 6 seconds), while simultaneously cooling the substrate temperature to room temperature at a rate of 3°C / minute. A recovery system collects undeposited material, achieving a recovery rate of 96.2%.

[0093] Test results show that the copper interconnect layer produced by this process has a thickness uniformity of 99.4%, significantly higher than the 96% achieved with conventional processes. Resistivity tests revealed a resistivity of 1.78 μΩ·cm, close to the theoretical value for bulk copper (1.68 μΩ·cm). X-ray diffraction and electron microscopy analysis revealed high crystallinity and uniform grain size (average grain size 120 nm, standard deviation less than 10 nm).

[0094] Example 2: Insulation layer spraying process for GaAs-based high-frequency devices

[0095] In an embodiment of sputtering a silicon nitride insulating layer on a 4-inch gallium arsenide wafer, the specific steps are as follows:

[0096] Wafer pretreatment: Use mixed gas (argon 90%, nitrogen 10%) plasma treatment, gas pressure 8Pa, RF power 150W, treatment time 30 seconds to activate the wafer surface.

[0097] Surface scanning: The intelligent platen system scans the wafer surface at a speed of 12μm / s, paying special attention to the step areas around the fabricated high-frequency device structures (typical height difference 80-150nm).

[0098] Parameter Generation: The system divides the wafer into two main regions: the center and the edge. The pressure in the center region is set to 1.8 N / point, and the pressure in the edge region is set to 2.2 N / point. The sputtering parameters are set as follows: silicon nitride source temperature 400°C, substrate temperature 200°C, pulse frequency 220 Hz, and pulse width 35 microseconds.

[0099] Sputtering process: The substrate is heated to 200°C. Once the temperature stabilizes (fluctuation less than ±0.08°C), the intelligent platen contacts the wafer. The pulsed sputtering system is activated, and silicon nitride material is sprayed onto the wafer surface at a frequency of 220Hz. The multiphase fluid system flow rate is set at 1.8ml / min.

[0100] Real-time monitoring: During the sputtering process, the AI ​​algorithm detected a 3.2% slowdown in the deposition rate in a densely populated area. The system automatically reduced the pressure in that area to 1.6N and increased the local spray flow rate by 7%. When the film thickness reached the preset value of 150nm (uniformity requirement ±1.5nm), the system stopped sputtering.

[0101] Post-processing: The substrate temperature was lowered to room temperature using a stepwise cooling curve (2°C / min for the first 10 minutes and 4°C / min for the latter part), while the pressure was released in a linear decreasing manner (completed within 8 seconds).

[0102] Test results show that the silicon nitride insulating layer has a thickness uniformity of 99.6%, a dielectric constant uniformity of 99.8%, and a leakage current density below 10^-9A / cm2. Fourier transform infrared spectroscopy analysis shows that the film is chemically bonded, with Si-N bonds dominating and a low hydrogen content (less than 3 atomic percent). Device testing shows a 15% reduction in parasitic capacitance and a significant improvement in high-frequency performance.

[0103] Example 3: Metal Contact Layer Sputtering Process for Silicon Carbide Power Devices

[0104] Example of sputtering a titanium / aluminum composite metal contact layer on a 6-inch silicon carbide power device wafer:

[0105] Wafer pretreatment: Use high-purity argon plasma (purity 99.9999%) for treatment, with a gas pressure of 12 Pa, a radio frequency power of 250 W, and a treatment time of 60 seconds to fully activate the silicon carbide surface.

[0106] Surface scanning: The intelligent platen system scans the surface at a speed of 6μm / s, focusing on the bottom and sidewall conditions of the trench structure (typical depth 1-2μm, width 2-5μm).

[0107] Parameter Generation: Based on the device distribution characteristics, the system divides the wafer into four zones and sets the pressure from center to edge to 3.5N, 3.8N, 4.0N, and 4.2N (at each control point). Sputtering parameters are set as follows: titanium source temperature 450°C, aluminum source temperature 380°C, substrate temperature 300°C, titanium layer pulse frequency 100Hz, pulse width 60μs; aluminum layer pulse frequency 150Hz, pulse width 45μs.

[0108] The sputtering process is a two-stage process. The substrate is first heated to 300°C. Once the temperature stabilizes, the intelligent pressure plate contacts the wafer. In the first stage, a titanium layer with a thickness of 30nm is sputtered; in the second stage, an aluminum layer with a thickness of 200nm is sputtered. The system automatically switches material sources without opening a cavity between the two stages.

[0109] Real-time monitoring: When the monitoring system detects insufficient coverage of the trench sidewalls, it automatically adjusts the pressure distribution in the trench area (reducing the pressure in the trench area by 10%) and increases the pulse width in that area to 70 microseconds (for the titanium layer) and 55 microseconds (for the aluminum layer). This adjustment ultimately achieves uniform coverage of the trench bottom and sidewalls.

[0110] Post-treatment: Two-stage pressure release (fast first and slow later, taking 3 seconds and 5 seconds respectively) was adopted, and cooling was performed to room temperature at a constant rate of 2.5°C / min.

[0111] Test results show that the step coverage of the composite metal layer reaches 98% (traditional processes are typically around 80%), and the contact resistance uniformity reaches 99.2%. Scanning electron microscopy analysis shows that the metal thickness ratio between the trench sidewalls and bottom reaches 0.95 (traditional processes are typically 0.6-0.7). Device electrical performance tests show that the on-resistance is reduced by 18% and thermal stability is improved. After operating at a high temperature of 350°C for 100 hours, the contact resistance does not increase by more than 5%.

[0112] Technical parameter summary table 1

[0113]

[0114]

[0115] The present invention encompasses any alternatives, modifications, equivalents, and solutions that fall within the spirit and scope of the present invention. To provide a thorough understanding of the present invention, specific details are described in detail below in connection with the preferred embodiments of the present invention, but those skilled in the art will be able to fully understand the present invention without these detailed descriptions. Furthermore, to avoid unnecessary confusion regarding the essence of the present invention, well-known methods, processes, procedures, components, and circuits have not been described in detail.

[0116] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A high-precision semiconductor device pressure plate type spraying process, characterized in that: The following steps are involved: Step 1: performing plasma activation treatment on the surface of the semiconductor substrate; Step 2: Use a pressure control array driven by a micro-electromechanical system to perform a three-dimensional profile scan on the substrate surface to obtain surface topological structure information; Step 3: generating a partition pressure distribution map and spraying parameters based on the surface topology information; Step 4: heating the substrate to a preset temperature; Step 5: According to the partitioned pressure distribution diagram, controlling the intelligent dynamic pressure plate to contact the substrate according to a preset pressure distribution; Step 6: Start the pulse alternating spraying system to spray the target material onto the substrate surface at a preset frequency; Step 7: Monitor the film thickness and deposition uniformity in real time through the online monitoring system, and dynamically adjust the pressure parameters and spraying parameters according to the monitoring results; Step 8: When the film thickness reaches the preset value, gradually release the pressure according to the preset curve and control the cooling of the substrate.

2. The process according to claim 1, characterized in that The intelligent dynamic platen system comprises: A micro-electromechanical system-driven pressure control array with an array density of 30-100 control points per square centimeter. The pressure of each control point can be independently adjusted within the range of 0-10N with an adjustment accuracy of ±0.01N. The pressing plate is made of silicon carbide composite material, and the surface flatness reaches ±2nm.

3. The process according to claim 1, characterized in that The pulse alternating spraying system comprises: High-precision nozzle array, nozzle aperture is 3-10 microns, nozzle array distribution density is 15-40 per square centimeter; High-frequency pulse controller, which can achieve an adjustable pulse frequency of 10-1000Hz and a minimum pulse width of 5-100 microseconds.

4. The process according to claim 1, characterized in that The process also includes a multiphase fluid channel system comprising: main fluid storage tank, multiphase fluid mixer, spiral fluid channel and vortex generator; The spiral fluid channel adopts a double helix structure, and the inner wall is treated with a hydrophobic material; The eddy current generator adopts ultrasonic excitation mode, and the operating frequency range is 20-60kHz.

5. The process according to claim 1, characterized in that The online monitoring system comprises: Optical interferometer thickness gauge with a measurement accuracy of ±0.5 angstroms; Infrared thermal imager with a temperature resolution of 0.03°C; A real-time image processing system based on deep learning algorithms is used to analyze deposition uniformity and generate parameter adjustment instructions.

6. The process according to claim 1, characterized in that The plasma activation treatment uses high-purity inert gas with a gas pressure of 5-15 Pa, a radio frequency power of 100-300 W, and a treatment time of 30-60 seconds.

7. The process according to claim 1, characterized in that The step of dynamically adjusting the pressure parameters and the spraying parameters comprises: When it is detected that the deposition rate deviation in a local area exceeds a preset threshold, the system automatically adjusts the pressure value and / or injection frequency and / or pulse width of the corresponding area; The preset threshold is 1-5% of the deposition rate deviation.

8. The process according to claim 1, characterized in that The step of gradually releasing the pressure according to the preset curve adopts an exponential decay curve with a time constant of 3-10 seconds; The step of controlling the cooling of the substrate adopts a segmented or constant rate cooling curve, and the cooling rate is 1-5° C. / min.

9. The process according to claim 1, characterized in that The process has the function of adaptively controlling material properties, including: Built-in material database, including the optimal process parameters for common semiconductor materials; Algorithm module for inferring initial parameters based on the physical and chemical properties of materials; A self-learning algorithm module that fine-tunes parameters through small sample tests.

10. The process according to any one of claims 1 to 9, characterized in that The process is applied to at least one of the following scenarios: Metal interconnection layer sputtering for silicon-based integrated circuits; Insulation layer spraying of GaAs-based high-frequency devices; Metal contact layer sputtering for silicon carbide power devices.

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