Cleaning equipment

Abstract

The invention provides a cleaning device, comprising: a cavity in which a wafer bearing device for bearing a wafer is arranged; and the first flow guide component is arranged at the top of the cavity, a plurality of different air inlet structures are arranged on the first flow guide component corresponding to a plurality of different areas of the lower surface of the first flow guide component, and the flow rates of air entering the cavity through the different air inlet structures are different. According to the scheme, the problems of unstable flow field, mutual interference between a process space and an environment space and the like can be solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a cleaning device. Background Art

[0002] In the chip manufacturing industry, single-wafer cleaning equipment is a key component of the wafer cleaning process, which takes place within a sealed chamber. Specifically, the wafer to be cleaned is transferred into the chamber and placed horizontally on a rotating chuck, which rotates the wafer. Simultaneously, a chemical sprayer rotates above the wafer and reciprocates over it, spraying different chemical solutions to clean the wafer. However, during this cleaning process, as the wafer rotates under the chuck, the chemical sprayed onto the wafer surface splashes in all directions due to centrifugal force, throwing it off the wafer surface. Furthermore, the liquid outlet of the chemical sprayer is typically perpendicular to the wafer surface, which can cause backsplash when the chemical spray hits the wafer surface. To prevent chemical splashes from contaminating the wafer by particles in the chamber environment and to remove contaminated particles from the chamber, a top air supply is typically installed at the top of the chamber to deliver air from top to bottom, and an exhaust system is also provided to remove contaminated particles. Therefore, the stability of the flow field generated by the top air supply device in the cavity is crucial to improving the cleaning effect of the wafer.

[0003] In the prior art, the top air supply device usually covers the entire interior of the cavity and is used to continuously and evenly supply air downward. Since the uniform flow field generated by the top air supply device is disturbed when the liquid medicine spraying device performs reciprocating motion, the flow field in the process space becomes unstable. The instability of the flow field will bring the particles deposited in the cavity to the surface of the wafer, increasing the risk of wafer contamination and affecting the cleaning effect. Moreover, a large amount of acid mist will be generated when special liquid medicines (such as sulfuric acid, phosphoric acid, etc.) are sprayed. The existing top air supply device cannot effectively suppress the diffusion of these acid mists, resulting in mutual interference between the process space and the environmental space, affecting the cleanliness of the entire cavity and the stability and consistency of the cleaning process. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a cleaning device that can solve the problems of flow field instability, mutual interference between process space and environmental space, etc. in the prior art.

[0005] To achieve the purpose of the present invention, a cleaning device is provided, comprising:

[0006] a cavity, wherein a wafer carrying device for carrying a wafer is provided in the cavity; and

[0007] The first flow guide component is arranged at the top of the cavity, and the first flow guide component is respectively provided with a plurality of different air intake structures corresponding to a plurality of different areas of the lower surface thereof, and the gas flow rates entering the cavity through the different air intake structures are different.

[0008] In some embodiments, the lower surface of the first guide component has a first area opposite to the wafer carrier, a second area surrounding the first area, and a transition area between the first area and the second area;

[0009] Among them, the multiple air intake structures include a first air intake structure, a second air intake structure and a third air intake structure corresponding to the first area, the second area and the transition area respectively, and the gas flow rates entering the cavity through the first air intake structure, the second air intake structure and the third air intake structure are respectively the first flow rate, the second flow rate and the third flow rate, the third flow rate is greater than the first flow rate, and the first flow rate is greater than the second flow rate.

[0010] In some embodiments, the third air intake structure includes an annular air intake channel corresponding to the transition region.

[0011] In some embodiments, the first air guide component includes a first subcomponent and a second subcomponent, the second subcomponent has a hollow portion, the first subcomponent is located in the hollow portion and is spaced apart from the second subcomponent to form the annular air inlet channel;

[0012] The lower surface of the first sub-component is the first area, and the first air intake structure is provided in the first sub-component;

[0013] The lower surface of the second sub-component is the second area, and the second air intake structure is provided in the second sub-component.

[0014] In some embodiments, the first air guide component further includes one or more strip-shaped connecting portions, and the one or more strip-shaped connecting portions are located in the annular air inlet channel and are evenly distributed along the circumference of the annular air inlet channel. Each of the strip-shaped connecting portions is connected to the first sub-component and the second sub-component at both ends in its length direction.

[0015] In some embodiments, the second subassembly includes a second air intake plate and a second ring portion, the lower surface of the second air intake plate being the second area, and the second air intake structure including a plurality of second air uniformity holes disposed in the second air intake plate and evenly distributed within the second area; the second air intake plate is provided with a through hole, the upper end of the second ring portion is connected to the lower surface of the second air intake plate, and the second ring portion and the interior of the through hole together constitute the hollow portion;

[0016] The first subassembly includes a first air intake plate and a first ring portion, both of which are located in the hollow portion. The lower surface of the first air intake plate is the first area, and the first air intake structure includes a plurality of first air uniformity holes provided in the first air intake plate and evenly distributed in the first area. The upper end of the first ring portion is connected to the edge of the lower surface of the first air intake plate.

[0017] The first air intake plate and the first ring portion are spaced apart from the second air intake plate and the second ring portion, respectively, to form the annular air intake channel.

[0018] In some embodiments, the distribution density of the first air uniforming holes is greater than the distribution density of the second air uniforming holes; and / or the ventilation cross-sectional area of ​​the first air uniforming holes is smaller than the ventilation cross-sectional area of ​​the second air uniforming holes.

[0019] In some embodiments, the cleaning device further includes a liquid medicine receiving device surrounding the wafer carrying device;

[0020] The orthographic projection of the first area on the plane parallel to the carrying surface of the wafer carrier coincides with the orthographic projection of the wafer carrier on the plane or is located within the orthographic projection of the wafer carrier on the plane; the inner circumferential contour of the orthographic projection of the transition area on the plane is located outside the orthographic projection contour of the wafer carrier on the plane, and is located inside the inner circumferential contour of the orthographic projection of the liquid medicine receiving device on the plane; the outer circumferential contour of the orthographic projection of the transition area on the plane is located outside the inner circumferential contour of the orthographic projection of the liquid medicine receiving device on the plane, and is located inside the outer circumferential contour of the orthographic projection of the liquid medicine receiving device on the plane.

[0021] In some embodiments, the cleaning apparatus further comprises a second flow guide member disposed in the cavity and dividing the cavity into an upper space and a lower space; the second flow guide member is provided with an opening portion, the opening portion connecting the upper space and the lower space, and the wafer carrier is at least partially disposed in the opening portion;

[0022] The second flow-guiding component is provided with an exhaust structure for exhausting the gas in the upper space into the lower space.

[0023] In some embodiments, the second flow guide component includes an exhaust plate provided with the opening and a baffle structure provided in the lower space, wherein at least a portion of an edge of the exhaust plate is in contact with the inner wall of the cavity; and the exhaust structure includes a plurality of exhaust holes distributed in the exhaust plate.

[0024] The bottom of the cavity is provided with a plurality of exhaust ports corresponding to different areas on the upper surface of the exhaust plate; the baffle structure is used to separate two adjacent exhaust ports.

[0025] In some embodiments, the cavity has first side walls arranged opposite to each other in a first direction and second side walls arranged opposite to each other in a second direction, the first direction and the second direction being perpendicular to each other; the opening is closer to one of the first side walls than to the other of the first side walls;

[0026] The exhaust plate is formed by connecting a first sub-exhaust plate, a second sub-exhaust plate, and a third sub-exhaust plate, wherein the first sub-exhaust plate is adjacent to the first side wall away from the opening, and the second sub-exhaust plate and the third sub-exhaust plate are adjacent to the first side wall close to the opening, and are spaced and symmetrically arranged in the second direction; the plurality of exhaust ports include a first exhaust port, a second exhaust port, and a third exhaust port, which are respectively located below the first sub-exhaust plate, the second sub-exhaust plate, and the third sub-exhaust plate;

[0027] The baffle structure includes a first baffle and a second baffle. The first baffle is vertically connected to the joint between the first sub-exhaust plate and the second sub-exhaust plate, and is used to separate the first exhaust port from the second exhaust port; the second baffle is vertically connected to the joint between the first sub-exhaust plate and the third sub-exhaust plate, and is used to separate the first exhaust port from the third exhaust port.

[0028] In some embodiments, the plurality of exhaust ports further include a fourth exhaust port, the fourth exhaust port being adjacent to the first side wall away from the opening portion and being located at a gap between the second sub-exhaust plate and the third sub-exhaust plate;

[0029] The baffle structure also includes two third baffles, which are respectively vertically connected to the second sub-exhaust plate and the third sub-exhaust plate, and are relatively located on both sides of the fourth exhaust port along the second direction, for separating the fourth exhaust port from the second exhaust port and the third exhaust port, respectively.

[0030] In some embodiments, two guide slopes are provided on the bottom surface of the cavity and below the first sub-exhaust plate. The two guide slopes are symmetrically arranged on both sides of the first exhaust port along the second direction. The vertical distance between each guide slope and the first sub-exhaust plate decreases along the second direction and away from the first exhaust port.

[0031] In some embodiments, two partitions are further provided below the first sub-exhaust plate, and the two partitions are arranged opposite to each other on both sides of the first exhaust port along the second direction;

[0032] The upper end of each partition is vertically connected to the first sub-exhaust plate, and the lower end is spaced apart from the adjacent guide slope.

[0033] In some embodiments, the ventilation cross-sectional area of ​​the exhaust holes distributed in the middle space of the first sub-exhaust plate above the first exhaust port is larger than the ventilation cross-sectional area of ​​the exhaust holes distributed in the edge spaces of the first sub-exhaust plate on both sides of the first exhaust port along the second direction; and / or,

[0034] A distribution density of the exhaust holes distributed in the middle space is smaller than a distribution density of the exhaust holes distributed in the edge space.

[0035] In some embodiments, a first guide protrusion is provided on the upper surface of the first sub-exhaust plate, and a second guide protrusion is provided on the lower surface of the first sub-exhaust plate, the first guide protrusion is in contact with the first side wall away from the opening, and the first guide protrusion has a first inclined side surface, the upper end of the first inclined side surface intersects with the first side wall, and the lower end intersects with the upper surface of the first sub-exhaust plate, and the horizontal distance between the first inclined side surface and the first side wall increases from top to bottom; the orthographic projection of the lower end of the first inclined side surface on the horizontal plane is located outside the orthographic projection of the first guide component on the horizontal plane; the second guide protrusion is in contact with the first side wall away from the opening, and the second guide protrusion has a second inclined side surface, the upper end of the second inclined side surface intersects with the lower surface of the first sub-exhaust plate, and the lower end intersects with the first side wall, and the horizontal distance between the second inclined side surface and the first side wall decreases from top to bottom.

[0036] In some embodiments, a vertical distance between an upper end of the first oblique side surface and an upper surface of the first sub-exhaust plate is a first distance; a vertical distance between an upper surface of the first sub-exhaust plate and a top wall of the cavity is a second distance;

[0037] A ratio of the first distance to the second distance is greater than or equal to 0.5 and less than or equal to 1.5.

[0038] The present invention has the following beneficial effects:

[0039] In the cleaning equipment provided by the present invention, the first flow-guiding component is provided with a plurality of different air intake structures corresponding to a plurality of different areas on its lower surface, and the gas flow rates entering the cavity through the different air intake structures are different. Compared with the prior art in which the flow field generated by the top air supply device is uniformly downward, the present application can form flow field spaces with different flow rates in the cavity by making the gas entering the cavity have different flow rates. According to Bernoulli's principle, the static pressure of the space with a large flow rate is low, while the static pressure of the space with a small flow rate is high. Based on this, the present application can use the pressure difference between different spaces in the cavity to control the flow field inside the cavity to achieve the purpose of reducing the flow field disturbance, thereby improving the flow field stability. Moreover, by controlling the flow field inside the cavity, it is also possible to effectively prevent pollutants such as acid mist and droplets generated in the process space from diffusing into the environmental space, while also preventing pollutants in the environmental space from entering the process space, effectively blocking the mutual interference between the process space and the environmental space, and improving the cleanliness of the cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 A three-dimensional perspective view of a single-wafer cleaning device in the related art;

[0041] Figure 2 A cross-sectional view of a single-wafer cleaning device in the related art;

[0042] Figure 3 is a cross-sectional view of a single-wafer cleaning device in the related art when viewed from above;

[0043] Figure 4 A schematic diagram of the internal flow field of a cavity of a single-wafer cleaning device in the related art;

[0044] Figure 5 A cross-sectional view of a cleaning device provided in an embodiment of the present invention;

[0045] Figure 6 Schematic diagram of the area division of the lower surface of the first flow guide component in an embodiment of the present invention;

[0046] Figure 7 A schematic diagram of the internal flow field of a cavity of a cleaning device provided in an embodiment of the present invention;

[0047] Figure 8 This is a structural diagram of the first flow guide component in an embodiment of the present invention;

[0048] Figure 9 This is a structural diagram of the second flow guide component located inside the cavity in an embodiment of the present invention;

[0049] Figure 10 is a structural diagram of a second flow guide component in an embodiment of the present invention;

[0050] Figure 11This is a layout diagram of the sub-exhaust plates, exhaust ports, and baffles located inside the cavity in an embodiment of the present invention;

[0051] Figure 12 Schematic diagram of the flow field in the space below the first sub-exhaust plate in an embodiment of the present invention. DETAILED DESCRIPTION

[0052] In order to enable those skilled in the art to better understand the technical solution of the present invention, the cleaning device provided by the present invention is described in detail below with reference to the accompanying drawings.

[0053] For related technologies, please refer to Figures 1 to 4 The single-wafer cleaning equipment includes a cavity 01, a rotating chuck 02, a chemical liquid spraying device 03, a chemical liquid receiving device 06 and a top air supply device 07. The interior of the cavity 01 is mainly divided into a process space 011 and an environmental space 012, wherein the process space 011 mainly includes the space occupied by the rotating chuck 02 and the chemical liquid receiving device 06 inside the cavity 01, and the remaining space inside the cavity 01 is the environmental space 012. During the process, the wafer 05 is placed on the rotating chuck 02, and the chemical liquid spraying device 03 rotates to the top of the center of the wafer 05 to spray the chemical liquid. However, when the chemical liquid is sprayed onto the surface of the wafer 05, droplets will splash. Some special chemical liquids (such as sulfuric acid, phosphoric acid, etc.) will even release heat and produce a large amount of acid mist. These droplets and acid mist will spread throughout the entire internal environment of the cavity 01, thereby affecting the process effect. In order to solve this problem, the relevant technology will continuously blow clean air downward through the top air supply device 07 to suppress the diffusion of acid mist generated in the process space 011, and discharge it through multiple exhaust ports 09 at the bottom of the cavity 01 to ensure the cleanliness of the microenvironment inside the cavity 01.

[0054] The top air supply device 07 usually covers the process space 011 and the environment space 012, and is used to continuously and evenly supply air downwards. As the liquid spraying device 03 reciprocates, it will disturb the uniform flow field generated by the top air supply device 07, resulting in an unstable flow field in the process space 011. The disturbed flow field inside the cavity 01 is as follows: Figure 4 As shown by the arrows in the figure, the unstable flow field can carry particles deposited in cavity 01 to the surface of wafer 05, increasing the risk of wafer 05 contamination and affecting the cleaning effect. Furthermore, when special liquid chemicals (such as sulfuric acid and phosphoric acid) are sprayed, a large amount of acid mist is generated. The top air supply device 07 in the related art cannot effectively suppress the diffusion of this acid mist, resulting in mutual interference between process space 011 and environmental space 012, affecting the cleanliness of the entire cavity 01 and the stability and consistency of the cleaning process.

[0055] To solve the above problem, please refer to Figure 5, an embodiment of the present invention provides a cleaning device 100, which is, for example, a single-wafer cleaning device, for performing a cleaning process on a wafer 5. The cleaning device 100 includes a cavity 1 and a first flow guide component 8, wherein the cavity 1 is used to provide a sealed space for the cleaning process, and it adopts, for example, a rectangular or square cavity. Of course, a cavity of any other shape such as a circular cavity can also be adopted. A wafer carrying device 2 for carrying the wafer 5 is provided in the cavity 1. The wafer carrying device 2 is, for example, a rotary chuck, which is used to drive the wafer 5 to rotate during the process. In some embodiments, at least one liquid medicine spraying device 3 is also provided in the cavity 1. The liquid medicine spraying device 3 can be rotated to above the wafer 5 and reciprocate above the wafer 5. The reciprocating motion of the liquid medicine spraying device 3 and the rotational motion of the wafer carrying device 2 work together to achieve the goal of evenly spraying different liquid medicines on the surface of the wafer 5, so as to achieve the cleaning of the wafer 5.

[0056] In some embodiments, the cleaning device 100 further includes a liquid medicine receiving device 6, which includes an annular body 61 surrounding the wafer carrier 2, and a multi-layer liquid inlet 62 is provided on the inner periphery of the annular body 61 for receiving liquid medicine splashed from the wafer surface to the surrounding area. In addition, the cleaning device 100 further includes a top air supply device 7, which is provided at the top of the cavity 1 and is used to provide clean air (or other gases) into the cavity 1 through the first flow guide component 8. The structure and function of the liquid medicine spraying device 3, the liquid medicine receiving device 6 and the top air supply device 7 adopt conventional technology in this field and will not be repeated here.

[0057] The first flow guide component 8 is arranged at the top of the cavity 1, and the first flow guide component 8 is provided with multiple different air intake structures corresponding to multiple different areas of the lower surface thereof, and the gas flow rates entering the cavity 1 through different air intake structures are different.

[0058] Each air intake structure can independently control the amount of air delivered to the cavity 1, thereby achieving zoned control of the air intake of the first air guide component 8, so that the gas flow rates entering different spaces of the cavity 1 vary. Compared to the uniform downward flow field generated by the top air supply device in the related art, the embodiments of the present invention use different air intake structures to ensure that the gas entering different spaces of the cavity 1 has different flow rates, thereby forming flow field spaces with different flow rates within the cavity 1. According to Bernoulli's principle, spaces with high flow rates have low static pressure, while spaces with low flow rates have high static pressure. Based on this, the embodiments of the present invention can utilize the pressure difference between different spaces in the cavity 1 to control the flow field within the cavity 1, thereby reducing flow field disturbances and improving flow field stability. Moreover, by controlling the flow field within the cavity 1, pollutants such as acid mist and droplets generated in the process space 11 can be effectively prevented from diffusing into the environmental space 12. At the same time, pollutants in the environmental space 12 are prevented from entering the process space 11, effectively blocking mutual interference between the process space 11 and the environmental space 12, and improving the cleanliness of the cavity 1.

[0059] In some embodiments, see Figure 6 The lower surface of the first guide member 8 has a first area 81 opposite to the wafer carrier 2, a second area 82 surrounding the first area 81, and a transition area 83 surrounding the first area 81 and the second area 82. Figure 6 The air intake structure is not shown. Specifically, the first area 81 is located above the space occupied by the wafer carrier 2 in the cavity 1 (referred to as the process space 11). The shape of the first area 81 can be adapted to the shape of the wafer carrier 2, i.e., circular. The orthographic projection of the first area 81 on the wafer carrier 2 completely covers the upper surface of the wafer carrier 2. The second area 82 surrounds the first area 81 and is located above the peripheral space of the wafer carrier 2 in the cavity 1 (referred to as the environmental space 12). The shape of the outer boundary of the second area 82 can be adapted to the shape of the cavity 1, for example, both are rectangular, and the sides are parallel to each other. In addition, the outer boundary of the second area 82 is spaced apart from the inner side wall of the cavity 1. There is an annular area between the outer boundary of the first area 81 and the inner boundary of the second area 82, i.e., the transition area 83. Correspondingly, there is an annular space below the transition area 83 and between the inner boundary of the environmental space 12 and the outer boundary of the process space 11. This annular space is referred to as the transition space 13. Compared with the process space 011 and the environment space 012 in the related art (such as Figure 1 In the embodiment of the present invention, the space in the chamber 1 is divided into a process space 11, an environmental space 12, and a transition space 13. That is, the transition space 13 is added, and the gas flow rates entering the three spaces are different.

[0060] Among them, multiple air intake mechanisms include a first air intake structure, a second air intake structure and a third air intake structure corresponding to the first area 81, the second area 82 and the transition area 83 respectively, and the gas flow rates entering the cavity 1 through the first air intake structure, the second air intake structure and the third air intake structure are the first flow rate, the second flow rate and the third flow rate respectively, the third flow rate is greater than the first flow rate, and the first flow rate is greater than the second flow rate.

[0061] By setting a first area 81 opposite to the wafer carrier 2, a second area 82 surrounding the first area 81, and a transition area 83 between the two on the lower surface of the first guide component 8, and adopting different air intake structures corresponding to these three areas (i.e., the first air intake structure, the second air intake structure and the third air intake structure), the gas entering different spaces of the cavity 1 has different flow rates, that is, the third flow rate (corresponding to flowing into the transition space 13)> the first flow rate (corresponding to flowing into the process space 11)> the second flow rate (corresponding to flowing into the environmental space 12). The embodiment of the present invention makes the gas flow rate flowing into the transition space 13 (corresponding to the transition area 83) the largest, the gas flow rate flowing into the process space 11 (corresponding to the first area 81) the second smallest, and the gas flow rate flowing into the environmental space 12 (corresponding to the second area 82) the smallest, so that a pressure difference can be generated between the process space 11 and the transition space 13, and between the environmental space 12 and the transition space 13. According to Bernoulli's principle, the static pressure of a space with a large flow rate is low, while the static pressure of a space with a small flow rate is high. Under the action of the pressure difference, the gases at the edge positions of the environmental space 12 and the process space 11 close to the transition space 13 all flow toward the transition space 13, and at most other positions except the edge positions, the gases in the process space 11, the environmental space 12 and the transition space 13 flow vertically downward at different flow rates, and the flow directions are as follows: Figure 7 As shown by the arrow in . The process space 11 and the environmental space 12 are effectively isolated by the transition space 13, which reduces the flow field disturbance and improves the stability of the flow field. Moreover, it can also effectively prevent the acid mist, droplets and other pollutants generated in the process space 11 from diffusing to the environmental space 12, while also preventing the pollutants in the environmental space 12 from entering the process space 11, effectively blocking the mutual interference between the process space 11 and the environmental space 12, and improving the cleanliness inside the cavity 1. In addition, by making the flow rate of the process space 11 greater than the flow rate of the environmental space 12, the particles and pollutants generated during the liquid spraying process can be more effectively discharged from the cavity 1. At the same time, the low flow rate of the environmental space 12 reduces the generation and diffusion of particles, thereby significantly improving the cleanliness inside the entire cavity 1.

[0062] The position of the transition region 83 can be designed according to the specific structure inside the cavity 1. For example, the inner circumference of the transition region 83 can be determined according to the size of the wafer carrier 2 and the wafer 5, while the outer circumference of the transition region 83 can be determined according to the inner circumference of the environmental space 12. In an embodiment including the liquid medicine receiving device 6, the orthographic projection of the first region 81 on a plane parallel to the bearing surface of the wafer carrier 2 (e.g., a horizontal plane) coincides with the orthographic projection of the wafer carrier 2 on the plane or is located within the orthographic projection of the wafer carrier 2 on the plane; the inner circumferential contour of the orthographic projection of the transition region 83 on the plane is located outside the orthographic projection contour of the wafer carrier 2 on the plane, and is located inside the inner circumferential contour of the orthographic projection of the liquid medicine receiving device 6 on the plane; the outer circumferential contour of the orthographic projection of the transition region 83 on the plane is located outside the inner circumferential contour of the orthographic projection of the liquid medicine receiving device 6 on the plane, and is located inside the outer circumferential contour of the orthographic projection of the liquid medicine receiving device 6 on the plane.

[0063] Taking the case where the wafer carrier 2 is a circular chuck and the liquid medicine receiving device 6 (i.e., the annular body 61) is an annular body, and correspondingly, the first region 81 is circular and the transition region 83 is annular, as an example, the outer diameter of the first region 81 is less than or equal to the outer diameter of the wafer carrier 2, the inner diameter of the transition region 83 is greater than the outer diameter of the wafer carrier 2, and smaller than the inner diameter of the liquid medicine receiving device 6 (i.e., the annular body 61); the outer diameter of the transition region 83 is greater than the inner diameter of the liquid medicine receiving device 6, and smaller than the outer diameter of the liquid medicine receiving device 6 (i.e., the annular body 61). Preferably, the outer diameter of the first region 81 is equal to the outer diameter of the wafer carrier 2, and the inner diameter of the transition region 83 is slightly greater than the outer diameter of the wafer carrier 2, and the outer diameter of the transition region 83 is slightly greater than the inner diameter of the liquid medicine receiving device 6 (its annular body 61). Of course, in actual applications, when the wafer carrier 2 and / or the liquid receiving device 6 adopt other shapes, the shapes of the first area 81, the transition area 83 and the second area 82 are adapted to the shapes of the wafer carrier 2 and the liquid receiving device 6, and the sizes of the first area 81, the transition area 83 and the second area 82 satisfy the above-mentioned projection size relationship.

[0064] In this way, the first area 81 can cover the process space 11 where the wafer carrier device 2 is located, ensuring that the gas flow rate and distribution in the process space 11 can meet the needs of the cleaning process. The transition space 13 below the transition area 83 can cover the gap between the wafer carrier device 2 and the liquid medicine receiving device 6, which can effectively avoid mutual interference between the process space 11 and the environmental space 12, and play a good isolation and diversion role. Of course, in actual applications, the boundary position between the first area 81 and the transition area 83, as well as the boundary position between the second area 82 and the transition area 83 can be adjusted according to specific needs, so that the respective positions and sizes of the process space 11, the environmental space 12 and the transition space 13 can be adjusted.

[0065] Furthermore, in some embodiments, in order to increase the flow rate of the gas entering the transition space 13 as much as possible, as shown in FIG. Figure 5 and Figure 6 As shown, the third air intake structure includes an annular air intake channel 8c corresponding to the transition region 83. The orthographic projection of the annular air intake channel 8c on the lower surface of the first air guide component 8 completely covers the transition region 83. That is, the first air guide component 8 is hollowed out in the transition region 83, thereby maximizing ventilation and ensuring the highest possible flow rate of gas entering the transition space 13 through the transition region 83. Of course, in actual applications, depending on the specific requirements for the flow rate of gas entering the transition space 13, the orthographic projection of the annular air intake channel 8c on the lower surface of the first air guide component 8 may also partially cover the transition region 83. Alternatively, the third air intake structure may employ air intake structures of other shapes and sizes.

[0066] In some embodiments, in order to form the above-mentioned annular air inlet channel 8c, the first air guide component 8 can adopt a split structure, for example, Figure 8 As shown, the first air guide component 8 includes a first subcomponent 8a and a second subcomponent 8b. The second subcomponent 8b has a hollow portion 84. The first subcomponent 8a is located within this hollow portion 84 and is spaced apart from the second subcomponent 8b, forming an annular air intake passage 8c. Specifically, the space between the outer circumference of the first subcomponent 8a and the inner circumference of the second subcomponent 8b, which forms the aforementioned hollow portion 84, forms the annular air intake passage 8c. This space corresponds to a transition region 83. Furthermore, the lower surface of the first subcomponent 8a is a first region 81, in which the first subcomponent 8a is provided with a first air intake structure; the lower surface of the second subcomponent 8b is a second region 82, in which the second subcomponent 8b is provided with a second air intake structure.

[0067] Furthermore, in some embodiments, in order to connect the first sub-component 8a and the second sub-component 8b together for easy installation and positioning, the first air guide component 8 also includes one or more strip-shaped connecting parts 85, and the one or more strip-shaped connecting parts 85 are located in the annular air inlet channel 8c and are evenly distributed along the circumference of the annular air inlet channel 8c. Each strip-shaped connecting part 85 is connected to the first sub-component 8a and the second sub-component 8b at both ends in its length direction. By adopting the strip-shaped connecting part 85, the space occupied by the strip-shaped connecting part 85 in the annular air inlet channel 8c can be reduced, and the resistance it generates to the airflow can be reduced, thereby reducing the impact on the airflow. Furthermore, in some embodiments, in order to further reduce the resistance generated by the strip-shaped connecting part 85 to the airflow, at least one through hole 851 is provided on each strip-shaped connecting part 85. For example, the strip-shaped connecting part 85 extends radially along the annular air inlet channel 8c, and one or more through holes 851 are spaced apart in its extension direction. Figure 8 As shown in FIG, each strip-shaped connecting portion 85 is provided with two through holes 851 .

[0068] The first sub-component 8a and the second sub-component 8b that realize the above functions can have various structures, for example, Figure 8 As shown, the second sub-component 8b includes a second air intake plate 8b1 and a second ring portion 8b2, the lower surface of the second air intake plate 8b1 is a second area 82, and the second air intake structure includes a plurality of second uniform air holes 8b3 arranged in the second air intake plate 8b1 and evenly distributed in the second area 82, which are used to uniformly supply air downward so that the gas enters the environmental space 12 of the cavity 1 evenly, so that the gas in the environmental space 12 can be evenly distributed, which helps to maintain the stability of the flow field in the environmental space 12 and reduce the generation and diffusion of particles.

[0069] The second air inlet plate 8b1 is provided with a through hole. The upper end of the second ring portion 8b2 is connected to the lower surface of the second air inlet plate 8b1, and the second ring portion 8b2 and the interior of the through hole together form a hollow portion 84. For example, the inner circumference of the second ring portion 8b2 is arranged coplanar with the hole wall of the through hole to form a continuous inner circumference that encloses the hollow portion 84. The first subassembly 8a includes a first air inlet plate 8a1 and a first ring portion 8a2, both of which are located in the hollow portion 84. The lower surface of the first air inlet plate 8a1 is a first region 81, and the first air inlet structure includes a plurality of first uniform air holes 8a3 disposed in the first air inlet plate 8a1 and evenly distributed within the first region 81. These holes are used to uniformly supply air downward, allowing the gas to uniformly enter the process space 11 of the chamber 1, thereby evenly distributing the gas in the process space 11 and helping to maintain a stable flow field in the process space 11.

[0070] Furthermore, the upper end of the first ring portion 8a2 is connected to the lower surface edge of the first air inlet plate 8a1. For example, the outer peripheral surface of the first ring portion 8a2 is coplanar with the outer peripheral surface of the first air inlet plate 8a1, forming a continuous outer peripheral surface opposite to the above-mentioned continuous inner peripheral surface. The first air inlet plate 8a1 and the first ring portion 8a2 (the continuous outer peripheral surface formed) are spaced apart from the second air inlet plate 8b1 and the second ring portion 8b2 (the continuous inner peripheral surface formed), respectively, to form an annular air inlet channel 8c. As a result, the gas can enter the process space 11 and the environmental space 12 respectively and evenly, and through the guidance of the annular air inlet channel 8c, a stable distribution of flow fields in different spaces is achieved. In addition, the above-mentioned arrangement of the first ring portion 8a2 and the second ring portion 8b2 can extend the downward flow path of the gas in the annular air inlet channel 8c, thereby better guiding the gas and keeping it flowing vertically downward.

[0071] In some embodiments, in order to achieve a first flow rate greater than the second flow rate, the distribution density of the first uniform air holes 8a3 is greater than the distribution density of the second uniform air holes 8b3; and / or, the ventilation cross-sectional area of ​​the first uniform air holes 8a3 is smaller than the ventilation cross-sectional area of ​​the second uniform air holes 8b3. By controlling the distribution density and / or ventilation cross-sectional area of ​​the first uniform air holes 8a3 and the second uniform air holes 8b3, the gas flow rates entering the process space 11 and the environmental space 12 can be adjusted respectively to achieve a first flow rate greater than the second flow rate. In actual applications, the cross-sectional shapes of the first uniform air holes 8a3 and the second uniform air holes 8b3 can be, for example, circular, diamond-shaped, square, etc., and the cross-sectional shapes, sizes and other parameters of each first uniform air hole 8a3 can be the same or different, and the cross-sectional shapes, sizes and other parameters of each second uniform air hole 8b3 can be the same or different.

[0072] In related technologies, such as Figure 2 and Figure 4 As shown, 2 to 3 exhaust ports 09 are provided at the bottom of the cavity 1. The negative pressure generated by these exhaust ports 09 cannot act on the entire environmental space 12 inside the cavity 1, resulting in the inability to effectively discharge the gas in some spaces. Moreover, since a plurality of liquid spraying devices 3 with different functions are also provided in the cavity 1, they occupy the internal space of the cavity 1, resulting in a dead zone easily formed at the bottom of the cavity 1. The gas flow direction in the dead zone will change, and the particles at the bottom of the cavity 1 will be brought to the surface of the wafer, causing wafer contamination and affecting the cleaning effect.

[0073] To solve this problem, Figure 5 、 Figure 9 and Figure 10As shown, the cleaning device 100 also includes a second flow guide component 10, which is arranged in the cavity 1 and divides the cavity 1 into an upper space and a lower space. The second flow guide component 10 can completely separate the upper space and the lower space, or can partially separate them. The first flow guide component 8 is located at the top of the upper space. In addition, the second flow guide component 10 is provided with an opening portion 101, which connects the upper space and the lower space, and the wafer carrier 2 is at least partially arranged in the opening portion 101, that is, the upper part of the wafer carrier 2 can be located in the upper space, and the lower part is located in the lower space. In the embodiment including the liquid medicine receiving device 6, as Figure 5 As shown, the liquid medicine receiving device 6 is also provided in the opening 101, and the upper portion of the liquid medicine receiving device 6 can be located in the upper space, while the lower portion is located in the lower space. Figure 10 As shown, when a liquid medicine spraying device 3 is also provided in the cavity 1, the second flow guide member 10 is further provided with an opening 102 for placing the liquid medicine spraying device 3. An exhaust structure is provided in the second flow guide member 10, which is used to discharge the gas in the upper space into the lower space. The gas in the lower space can be discharged from the cavity 1 through the exhaust port 9 at the bottom of the cavity 1.

[0074] Because the second flow-guiding member 10 divides the chamber 1 into an upper space and a lower space, each of which is smaller than the entire ambient space 12, and because the second flow-guiding member 10 occupies a portion of the ambient space 12, this prevents the disordered flow of gas caused by an excessively large space, which could affect the flow field of the process space 11. Furthermore, the exhaust structure within the second flow-guiding member 10 allows gas to flow smoothly from the upper space into the lower space, while also optimizing the gas flow path and reducing gas flow into dead zones.

[0075] In some embodiments, the second flow guide component 10 that realizes the above function includes, for example, an exhaust plate 10a provided with the above opening 101 and a baffle structure provided in the lower space, and at least part of the edge of the exhaust plate 10a is in contact with the inner wall of the cavity 1. Figure 9 As shown, for a rectangular cavity 1, the exhaust plate 10a is also rectangular, and the four sides of the exhaust plate 10a can be respectively fitted with the four inner side walls of the cavity 1, or the opening 101 is close to one of the inner side walls of the cavity 1 (for example Figure 9 In the case of the right inner wall in the chamber, the side of the exhaust plate 10a adjacent to the inner wall can be spaced apart from the inner wall. This can reduce the risk of particles from the bottom of the chamber 1 being carried onto the wafer surface. Of course, in actual applications, at least a portion of the edge of the exhaust plate 10a can be aligned with the inner wall of the chamber 1 according to specific needs.

[0076] On this basis, the exhaust structure includes multiple exhaust holes 103 distributed throughout the exhaust plate 10a. These holes allow gas to flow from the upper space into the lower space, optimizing the gas flow path and reducing gas flow into dead zones. The distribution, size, and shape of the exhaust holes 103 can be tailored to the required gas flow rate in the ambient space 12, ensuring that gas in the upper space can flow unimpeded into the lower space.

[0077] And, as Figure 5 and Figure 7 As shown, the bottom of chamber 1 is provided with multiple exhaust ports 9 in different areas corresponding to the upper surface of exhaust plate 10a; a baffle structure is used to separate two adjacent exhaust ports 9. This prevents gas from interfering with each other and causing disturbances, thereby making gas flow more orderly, optimizing the gas flow path, and reducing the stagnation time of gas at the bottom of chamber 1, thereby helping to eliminate dead zones. It should be noted that the multiple exhaust ports 9 can be respectively connected to the plant exhaust system through multiple exhaust pipelines 104.

[0078] In order to ensure that the negative pressure generated by the exhaust port 9 at the bottom of the cavity 1 can effectively act on the entire environmental space 12 inside the cavity 1, thereby achieving effective discharge of the gas inside the entire cavity 1, the position and number of the exhaust ports 9 can be reasonably arranged according to the layout and spatial distribution inside the cavity 1. Furthermore, according to the spatial position and size of the negative pressure generated by each exhaust port 9 acting on the interior of the cavity 1, a baffle structure can be used to block between the corresponding exhaust ports 9 to form multiple different subspaces (which may not be completely separated) in the lower space. This separation method can avoid the disturbance caused by mutual interference between the exhaust ports 9, so that each exhaust port 9 acts on a subspace accordingly. The position and size of the subspace can be designed according to the negative pressure range of the exhaust port 9 and the layout inside the cavity 1 to ensure that the negative pressure generated by the exhaust port 9 in the subspace can effectively act on the entire subspace, and ultimately achieve that the negative pressure generated by all the exhaust ports 9 can effectively act on the entire environmental space 12 inside the cavity 1.

[0079] In a specific embodiment, Figure 11As shown, for a rectangular or square cavity, the cavity 1 has a first sidewall 14a disposed opposite each other in a first direction (parallel to the X-axis) and a second sidewall 14b disposed opposite each other in a second direction (parallel to the Y-axis), with the first and second directions being perpendicular to each other. Since the wafer carrier 2 is typically not positioned at the center of the cavity 1, the opening 101 of the exhaust plate 10a is also offset from the center of the cavity 1. For example, in the first direction, the opening 101 is closer to the other first sidewall 14a (right side) than to one of the first sidewalls 14a (left side). In the second direction, the distance between the opening 101 and the two second sidewalls 14b is the same. In this case, in the entire space of the cavity 1, the volume of the space between the wafer carrier 2 in the opening portion 101 and the first side wall 14a away from it (called the first space 15a) is relatively large, while the volumes of the two spaces between the opening portion 101 and the two second side walls 14b (called the second space 15b) are relatively small. In addition, in the lower space, the volume of the space between the opening portion 101 and the first side wall 14a close to it (called the third space 15c) is even smaller. Based on this, the parameters such as the number, position and size of the exhaust ports 9 can be reasonably designed according to the positions and sizes of these spaces. Then, after these parameters of the exhaust ports 9 are determined, the baffle structure is designed to divide the lower space into multiple sub-spaces corresponding to the multiple exhaust ports 9, and the positions and sizes of these sub-spaces meet the negative pressure range of each exhaust port 9 and the layout inside the cavity.

[0080] In some embodiments, the exhaust plate 10a adopts a split structure, and adjacent sub-exhaust plates 10a are spliced ​​together to form a complete exhaust plate 10a. Specifically, Figure 10 and Figure 11As shown, corresponding to the first space 15a and the two second spaces 15b, the exhaust plate 10a is composed of a first sub-exhaust plate 10a1, a second sub-exhaust plate 10a2, and a third sub-exhaust plate 10a3. The first sub-exhaust plate 10a1 is adjacent to the first sidewall 14a away from the opening 101, i.e., the orthographic projection of the first sub-exhaust plate 10a1 on a radial cross-section of the entire space of the cavity 1 overlaps the orthographic projection of the first space 15a on a radial cross-section of the entire space of the cavity 1. The second sub-exhaust plate 10a2 and the third sub-exhaust plate 10a3 are adjacent to the first sidewall 14a close to the opening 101, and are spaced and symmetrically arranged in the second direction, i.e., the orthographic projections of the second sub-exhaust plate 10a2 and the third sub-exhaust plate 10a3 on a radial cross-section of the entire space of the cavity 1 overlap the orthographic projections of the two second spaces 15b on a radial cross-section of the entire space of the cavity 1. Since the third space 15c is very narrow, it does not need to be covered by the exhaust plate 10a. In other words, the portion of the exhaust plate 10a corresponding to the third space 15c can be hollow. By using a split exhaust plate 10a, not only can different sub-exhaust plates be flexibly used to cover different sub-spaces, but it is also easy to process and install. However, the embodiment of the present invention is not limited thereto, and the exhaust plate 10a can also be an integrated structure.

[0081] In some embodiments, the plurality of exhaust ports 9 include a first exhaust port 9a, a second exhaust port 9b, and a third exhaust port 9c, which are respectively located below the first sub-exhaust plate 10a1, the second sub-exhaust plate 10a2, and the third sub-exhaust plate 10a3. Figure 11 As shown, the baffle structure includes a first baffle 16a and a second baffle 16b, the positions of which are indicated by two vertical dashed lines. The first baffle 16a is vertically connected to the joint of the first sub-exhaust plate 10a1 and the second sub-exhaust plate 10a2, and is used to separate the first exhaust port 9a from the second exhaust port 9b; the second baffle 16b is vertically connected to the joint of the first sub-exhaust plate 10a1 and the third sub-exhaust plate 10a3, and is used to separate the first exhaust port 9a from the third exhaust port 9c. The first baffle 16a and the second baffle 16b can separate the space of the first space 15a located below the first sub-exhaust plate 10a1 (referred to as the first sub-space) from the spaces of the two second spaces 15b located below the second sub-exhaust plate 10a2 and the third sub-exhaust plate 10a3 (referred to as the second sub-spaces), respectively, so that the negative pressure range of the first exhaust port 9a can cover the first sub-space, and the negative pressure ranges of the second exhaust port 9b and the third exhaust port 9c can respectively cover the two second sub-spaces. Furthermore, since the first subspace is larger than each second subspace, the ventilation cross-sectional area of ​​the first exhaust port 9a may be larger than the ventilation cross-sectional areas of each of the second exhaust port 9b and the third exhaust port 9c.

[0082] Furthermore, in some embodiments, the plurality of exhaust ports 9 further include a fourth exhaust port 9d, which is adjacent to the first sidewall 14a away from the opening 101 and located in the gap between the second sub-exhaust plate 10a2 and the third sub-exhaust plate 10a3. The negative pressure range of the fourth exhaust port 9d can cover the aforementioned third space 15c. Furthermore, the baffle structure further includes two third baffles 16c, the locations of which are indicated by two horizontal dashed lines. The two third baffles 16c are respectively perpendicularly connected to the second sub-exhaust plate 10a2 and the third sub-exhaust plate 10a3, and are located on opposite sides of the fourth exhaust port 9d along the second direction, respectively, to separate the fourth exhaust port 9d from the second exhaust port 9b and the third exhaust port 9c. The two third baffles 16c can separate the third space 15c from the two second sub-spaces, respectively, so that the negative pressure range of the fourth exhaust port 9d covers the third space 15c, and the negative pressure ranges of the second exhaust port 9b and the third exhaust port 9c respectively cover the two second sub-spaces. Furthermore, since the lower space of the third space 15c is smaller than each second subspace, the ventilation cross-sectional area of ​​the fourth exhaust port 9d may be smaller than the ventilation cross-sectional areas of each of the second exhaust port 9b and the third exhaust port 9c.

[0083] Since the first space 15a is located below the first sub-exhaust plate 10a1 (referred to as the first sub-space), it is relatively large. Figure 12 As shown, gas entering the first subspace from either side of the first exhaust port 9a may flow into the dead zone at the bottom of the chamber 1, causing flow stagnation. To address this issue, in some embodiments, two guiding slopes 105 are provided on the bottom surface of the chamber 1, below the first sub-exhaust plate 10a1. The two guiding slopes 105 are symmetrically arranged on either side of the first exhaust port 9a along the second direction, with the vertical distance between each guiding slope 105 and the first sub-exhaust plate 10a1 decreasing along the second direction away from the first exhaust port 9a. With the help of the guiding slopes 105, gas on both sides of the first exhaust port 9a can be directed to the first exhaust port 9a. Furthermore, the portion of the chamber 1 bottom formed with the guiding slopes 105 eliminates the dead zone at the bottom of the chamber 1, preventing flow stagnation and ensuring flow field stability. Furthermore, although the gas changes direction upon reaching the guiding slopes 105, the shielding effect of the first sub-exhaust plate 10a1 ensures that the flow field in the upper space above the first sub-exhaust plate 10a1 is not affected.

[0084] Furthermore, in some embodiments, two partitions 106 are provided below the first sub-exhaust plate 10a1. The two partitions 106 are arranged on opposite sides of the first exhaust port 9a along the second direction. The upper end of each partition 106 is vertically connected to the first sub-exhaust plate 10a1, and the lower end is spaced apart from the adjacent guide slope 105. With the help of the two partitions 106, the space above the first exhaust port 9a in the first subspace can be partially separated from the space on both sides of the first exhaust port 9a. This allows the gas in the space above the first exhaust port 9a in the first subspace to flow stably from top to bottom, reducing gas disturbances. In addition, the lower end of each partition 106 is spaced apart from the adjacent guide slope 105, which ensures that the gas in the space on both sides of the first exhaust port 9a can flow into the first exhaust port 9a along the guide slope 105.

[0085] In addition, according to the difference in distance between different areas of the first sub-exhaust plate 10a1 and the first exhaust port 9a, as well as the gas flow rate above each area, the ventilation cross-sectional area and / or distribution density of the exhaust holes 103 in different areas of the first sub-exhaust plate 10a1 can be made different, thereby ensuring that the gas can enter the first sub-space unimpeded from the exhaust holes 103 in each area. In some embodiments, Figure 10 and Figure 12 As shown, the ventilation cross-sectional area of ​​the exhaust holes 103a distributed in the intermediate space above the first exhaust port 9a of the first sub-exhaust plate 10a1 is greater than the ventilation cross-sectional area of ​​the exhaust holes 103 distributed in the edge spaces of the first sub-exhaust plate 10a1 on both sides of the first exhaust port 9a along the second direction; and / or, the distribution density of the exhaust holes 103a distributed in the intermediate space is less than the distribution density of the exhaust holes 103 distributed in the edge spaces. Specifically, the exhaust holes 103a distributed in the intermediate space can be strip-shaped holes such as oblong holes, elliptical holes, or rectangular holes, while the exhaust holes 103 distributed in the edge spaces can be circular holes, square holes, or the like. However, embodiments of the present invention are not limited to this.

[0086] In some embodiments, as Figure 5 and Figure 10As shown, the upper surface of the first sub-exhaust plate 10a1 is provided with a first guide protrusion 110, and the lower surface of the first sub-exhaust plate 10a1 is provided with a second guide protrusion 120. The first guide protrusion 110 is in contact with the first side wall 14a away from the opening 101, and the first guide protrusion 110 has a first oblique side surface 110a. The upper end of the first oblique side surface 110a intersects with the first side wall 14a, and the lower end intersects with the upper surface of the first sub-exhaust plate 10a1. The horizontal distance between the first oblique side surface 110a and the first side wall 14a is The distance increases from top to bottom; the orthographic projection of the lower end of the first oblique side surface 110a on the horizontal plane is located outside the orthographic projection of the first guide component 8 on the horizontal plane; the second guide protrusion 120 is in contact with the first side wall 14a away from the opening 101, and the second guide protrusion 120 has a second oblique side surface 120a, the upper end of the second oblique side surface 120a intersects with the lower surface of the first sub-exhaust plate 10a1, and the lower end intersects with the first side wall 14a, and the horizontal distance between the second oblique side surface 120a and the first side wall 14a decreases from top to bottom.

[0087] With the help of the above-mentioned first guide protrusion 110, on the one hand, by occupying part of the volume in the upper space, it is possible to avoid disordered gas flow caused by excessive space, which affects the flow field of the process space 11. On the other hand, the first inclined side surface 110a can be used to guide the gas near the edge of the cavity 1, so that it is guided to the exhaust hole 103 of the first sub-exhaust plate 10a1. By adjusting the inclination angle of the above-mentioned first inclined side surface 110a, the volume of space occupied by it in the upper space can be adjusted. The inclination angle can be determined according to the volume of the space in which it is located. At the same time, it is also necessary to ensure that the orthographic projection of the lower end of the first inclined side surface 110a on the horizontal plane is located outside the orthographic projection of the first guide component 8 on the horizontal plane to avoid hindering the downward flow of gas in the upper space. Furthermore, when other parameters remain unchanged, the above-mentioned inclination angle can be adjusted by adjusting the vertical distance between the upper end of the first inclined side surface 110a and the upper surface of the first sub-exhaust plate 10a1.

[0088] With the help of the second flow-guiding protrusion 120, on the one hand, it is possible to avoid disordered gas flow caused by excessive space by occupying part of the volume in the lower space (i.e., the first subspace). On the other hand, the second oblique side surface 120a can avoid hindering the downward flow of gas entering the lower space, so as to ensure that the gas can smoothly enter the first exhaust port 9a. In some embodiments, as Figure 10 As shown, the second guide protrusion 120 is located in the middle of the first side wall 14 a and is located on one side of the first exhaust port 9 a in the first direction.

[0089] In some embodiments, in order to achieve the above-mentioned effects, the vertical distance between the upper end of the first inclined side surface 110a and the upper surface of the first sub-exhaust plate 10a1 is a first distance; the vertical distance between the upper surface of the first sub-exhaust plate 10a1 and the top wall of the cavity 1 is a second distance; the ratio of the first distance to the second distance is greater than or equal to 0.5, and less than or equal to 1.5.

[0090] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A cleaning device, characterized in that: include: A cavity, wherein a wafer carrying device for carrying a wafer is provided in the cavity; as well as The first flow guide component is arranged at the top of the cavity, and the first flow guide component is respectively provided with a plurality of different air intake structures corresponding to a plurality of different areas of the lower surface thereof, and the gas flow rates entering the cavity through the different air intake structures are different.

2. The cleaning device according to claim 1, characterized in that The lower surface of the first guide component has a first area opposite to the wafer carrying device, a second area surrounding the first area, and a transition area surrounding the first area and the second area; Among them, the multiple air intake structures include a first air intake structure, a second air intake structure and a third air intake structure corresponding to the first area, the second area and the transition area respectively, and the gas flow rates entering the cavity through the first air intake structure, the second air intake structure and the third air intake structure are respectively the first flow rate, the second flow rate and the third flow rate, the third flow rate is greater than the first flow rate, and the first flow rate is greater than the second flow rate.

3. The cleaning device according to claim 2, characterized in that The third air intake structure includes an annular air intake passage corresponding to the transition area.

4. The cleaning device according to claim 3, characterized in that The first air guide component includes a first subcomponent and a second subcomponent, the second subcomponent has a hollow portion, the first subcomponent is located in the hollow portion and is spaced apart from the second subcomponent to form the annular air inlet channel; The lower surface of the first sub-component is the first area, and the first air intake structure is provided in the first sub-component; The lower surface of the second sub-component is the second area, and the second air intake structure is provided in the second sub-component.

5. The cleaning device according to claim 4, characterized in that: The first air guide component also includes one or more strip-shaped connecting parts, which are located in the annular air intake channel and are evenly distributed along the circumference of the annular air intake channel. Each of the strip-shaped connecting parts is connected to the first sub-component and the second sub-component at both ends in its length direction.

6. The cleaning device according to claim 3, characterized in that The second subassembly includes a second air intake plate and a second ring portion, the lower surface of the second air intake plate being the second area, and the second air intake structure including a plurality of second air uniformity holes provided in the second air intake plate and evenly distributed within the second area; the second air intake plate is provided with a through hole, the upper end of the second ring portion is connected to the lower surface of the second air intake plate, and the second ring portion and the interior of the through hole together constitute the hollow portion; The first subassembly includes a first air intake plate and a first ring portion, both of which are located in the hollow portion. The lower surface of the first air intake plate is the first area, and the first air intake structure includes a plurality of first air uniformity holes provided in the first air intake plate and evenly distributed in the first area. The upper end of the first ring portion is connected to the edge of the lower surface of the first air intake plate. The first air intake plate and the first ring portion are spaced apart from the second air intake plate and the second ring portion, respectively, to form the annular air intake channel.

7. The cleaning device according to claim 6, characterized in that The distribution density of the first air uniforming holes is greater than the distribution density of the second air uniforming holes; and / or the ventilation cross-sectional area of ​​the first air uniforming holes is smaller than the ventilation cross-sectional area of ​​the second air uniforming holes.

8. The cleaning device according to any one of claims 1 to 7, characterized in that: The cleaning device further includes a liquid medicine receiving device surrounding the wafer carrying device; The orthographic projection of the first area on the plane parallel to the carrying surface of the wafer carrier coincides with the orthographic projection of the wafer carrier on the plane or is located within the orthographic projection of the wafer carrier on the plane; the inner circumferential contour of the orthographic projection of the transition area on the plane is located outside the orthographic projection contour of the wafer carrier on the plane, and is located inside the inner circumferential contour of the orthographic projection of the liquid medicine receiving device on the plane; the outer circumferential contour of the orthographic projection of the transition area on the plane is located outside the inner circumferential contour of the orthographic projection of the liquid medicine receiving device on the plane, and is located inside the outer circumferential contour of the orthographic projection of the liquid medicine receiving device on the plane.

9. The cleaning device according to any one of claims 1 to 7, characterized in that: The cleaning apparatus further includes a second flow guide component, the second flow guide component being disposed in the cavity and dividing the cavity into an upper space and a lower space; the second flow guide component being provided with an opening portion, the opening portion connecting the upper space and the lower space, the wafer carrying device being at least partially disposed in the opening portion; The second flow-guiding component is provided with an exhaust structure for exhausting the gas in the upper space into the lower space.

10. The cleaning device according to claim 9, characterized in that The second flow guide component includes an exhaust plate provided with the opening and a baffle structure provided in the lower space, wherein at least a portion of an edge of the exhaust plate is in contact with the inner wall of the cavity; the exhaust structure includes a plurality of exhaust holes distributed in the exhaust plate; The bottom of the cavity is provided with a plurality of exhaust ports corresponding to different areas on the upper surface of the exhaust plate; The baffle structure is used to separate two adjacent exhaust ports.

11. The cleaning device according to claim 10, characterized in that: The cavity has first side walls arranged opposite to each other in a first direction and second side walls arranged opposite to each other in a second direction, the first direction and the second direction being perpendicular to each other; the opening is closer to one of the first side walls than to the other of the first side walls; The exhaust plate is formed by connecting a first sub-exhaust plate, a second sub-exhaust plate, and a third sub-exhaust plate, wherein the first sub-exhaust plate is adjacent to the first side wall away from the opening, and the second sub-exhaust plate and the third sub-exhaust plate are adjacent to the first side wall close to the opening, and are spaced and symmetrically arranged in the second direction; the plurality of exhaust ports include a first exhaust port, a second exhaust port, and a third exhaust port, which are respectively located below the first sub-exhaust plate, the second sub-exhaust plate, and the third sub-exhaust plate; The baffle structure includes a first baffle and a second baffle. The first baffle is vertically connected to the joint between the first sub-exhaust plate and the second sub-exhaust plate, and is used to separate the first exhaust port from the second exhaust port; the second baffle is vertically connected to the joint between the first sub-exhaust plate and the third sub-exhaust plate, and is used to separate the first exhaust port from the third exhaust port.

12. The cleaning device according to claim 11, characterized in that The plurality of exhaust ports further include a fourth exhaust port, the fourth exhaust port being adjacent to the first side wall away from the opening portion and being located at a gap between the second sub-exhaust plate and the third sub-exhaust plate; The baffle structure also includes two third baffles, which are respectively vertically connected to the second sub-exhaust plate and the third sub-exhaust plate, and are relatively located on both sides of the fourth exhaust port along the second direction, for separating the fourth exhaust port from the second exhaust port and the third exhaust port, respectively.

13. The cleaning device according to claim 11, characterized in that Two guide slopes are provided on the bottom surface of the cavity and below the first sub-exhaust plate. The two guide slopes are symmetrically arranged on both sides of the first exhaust port along the second direction. The vertical distance between each guide slope and the first sub-exhaust plate decreases along the second direction and away from the first exhaust port.

14. The cleaning device according to claim 13, characterized in that Two partitions are further provided below the first sub-exhaust plate, and the two partitions are arranged opposite to each other on both sides of the first exhaust port along the second direction; The upper end of each partition is vertically connected to the first sub-exhaust plate, and the lower end is spaced apart from the adjacent guide slope.

15. The cleaning device according to claim 14, characterized in that The ventilation cross-sectional area of ​​the exhaust holes distributed in the middle space of the first sub-exhaust plate above the first exhaust port is larger than the ventilation cross-sectional area of ​​the exhaust holes distributed in the edge spaces of the first sub-exhaust plate on both sides of the first exhaust port along the second direction; and / or, A distribution density of the exhaust holes distributed in the middle space is smaller than a distribution density of the exhaust holes distributed in the edge space.

16. The cleaning device according to claim 11, characterized in that The upper surface of the first sub-exhaust plate is provided with a first guide protrusion, and the lower surface of the first sub-exhaust plate is provided with a second guide protrusion, the first guide protrusion is in contact with the first side wall away from the opening, and the first guide protrusion has a first inclined side surface, the upper end of the first inclined side surface intersects with the first side wall, and the lower end intersects with the upper surface of the first sub-exhaust plate, and the horizontal distance between the first inclined side surface and the first side wall increases from top to bottom; the orthographic projection of the lower end of the first inclined side surface on the horizontal plane is located outside the orthographic projection of the first guide component on the horizontal plane; the second guide protrusion is in contact with the first side wall away from the opening, and the second guide protrusion has a second inclined side surface, the upper end of the second inclined side surface intersects with the lower surface of the first sub-exhaust plate, and the lower end intersects with the first side wall, and the horizontal distance between the second inclined side surface and the first side wall decreases from top to bottom.

17. The cleaning device according to claim 16, characterized in that A vertical distance between the upper end of the first oblique side surface and the upper surface of the first sub-exhaust plate is a first distance; a vertical distance between the upper surface of the first sub-exhaust plate and the top wall of the cavity is a second distance; A ratio of the first distance to the second distance is greater than or equal to 0.5 and less than or equal to 1.5.

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