Electrostatic chuck and plasma processing device

Abstract

The invention relates to the technical field of semiconductor equipment, and provides an electrostatic chuck and a plasma processing device.The electrostatic chuck is applied to the plasma processing device.The electrostatic chuck comprises an insulating substrate, a heating part and a micro-nano heat conduction part, the insulating substrate is provided with a bearing table used for bearing a wafer, and a containing cavity is formed in the insulating substrate; a heat insulation fluid is stored in the accommodating cavity; the heating part is arranged in the accommodating cavity and is embedded in the heat insulation fluid so as to block a heat conduction thermal bridge between the heating part and the insulation substrate; the micro-nano heat conduction part is arranged in the insulating substrate and used for connecting a heat conduction heat bridge between the heating part and a bearing table of the insulating substrate, and the first part, arranged in the containing cavity, of the micro-nano heat conduction part is embedded in the heat insulation fluid so as to block the radial heat conduction heat bridge between the first part of the micro-nano heat conduction part and the insulating substrate. The electrostatic chuck is used for adjusting a heat conduction path on the surface of a wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to an electrostatic chuck and a plasma processing device. Background Art

[0002] Currently, electrostatic chucks typically embed heating wires in fixed areas within them, limiting temperature control to those fixed locations. Because this design provides a fixed heat conduction path and distribution, it's difficult to flexibly adjust the speed and range of heat transfer within the substrate to meet actual process requirements. This makes precise wafer temperature control difficult under varying process conditions, impacting process consistency and product quality. Summary of the Invention

[0003] An object of the present invention is to provide an electrostatic chuck and a plasma processing device, wherein the electrostatic chuck is used to adjust the heat conduction path and distribution on the surface of a wafer.

[0004] According to a first aspect of an embodiment of the present invention, there is provided an electrostatic chuck for use in a plasma processing apparatus, the electrostatic chuck comprising: An insulating substrate, wherein the insulating substrate has a carrier for carrying a wafer, and the interior of the insulating substrate has a receiving cavity, wherein the receiving cavity stores a heat-insulating fluid; a heating portion, disposed in the accommodating cavity and embedded in the heat-insulating fluid to block a heat-conducting heat bridge between the heating portion and the insulating substrate; A micro-nano thermal conductive portion is provided in the insulating substrate and is used to connect the heat conduction heat bridge between the heating portion and the supporting platform of the insulating substrate. The first portion of the micro-nano thermal conductive portion placed in the accommodating cavity is embedded in the thermal insulation fluid to block the radial heat conduction heat bridge between the first portion of the micro-nano thermal conductive portion and the insulating substrate, so that the heat generated by the heating portion when current is loaded is axially guided to the supporting platform of the insulating substrate through the micro-nano thermal conductive portion to heat the wafer on the supporting platform.

[0005] Optionally, a plurality of the micro-nano heat conducting parts are provided, the number of the heating parts is set to one, and one heating part is connected to a plurality of the micro-nano heat conducting parts.

[0006] Optionally, a plurality of the micro-nano heat conducting parts and the heating parts are provided; one heating part is connected to a plurality of the micro-nano heat conducting parts, or a plurality of the heating parts are connected to a plurality of the micro-nano heat conducting parts in a one-to-one correspondence.

[0007] Optionally, the plurality of micro-nano thermal conductive portions are arranged in an array; the heating portion is located between rows and columns of the micro-nano thermal conductive portion array, wherein each heating portion is connected to at least two micro-nano thermal conductive portions located in the same row or column.

[0008] Optionally, the insulating substrate has a central axis perpendicular to the supporting surface of the supporting platform, and a plurality of the micro-nano heat conducting parts are arranged around the insulating substrate with the central axis as the center, and each of the heating parts is connected to at least two of the micro-nano heat conducting parts.

[0009] Optionally, there is a gap between two adjacent micro-nano heat conducting parts at ends close to the supporting platform, and a size of the gap is greater than or equal to 0.5 μm and less than or equal to 1.5 μm.

[0010] Optionally, the end of the micro-nano heat conductive portion close to the carrier platform extends inside the carrier platform in a direction away from the accommodating cavity, and the end of the micro-nano heat conductive portion close to the carrier platform is arranged flush with the carrier surface of the carrier platform.

[0011] Optionally, the end of the micro-nano heat conducting portion close to the carrier platform extends to outside the top of the carrier platform, and the end of the micro-nano heat conducting portion close to the carrier platform is arranged flush with the top of the carrier platform.

[0012] Optionally, the heating part is a heating wire or a heating strip.

[0013] Optionally, the micro-nano heat conducting portion includes a micro-plate, a first micro-pile and a second micro-pile; The microplate is connected to the insulating substrate; The first micro pile is connected to the micro plate, and the first micro pile is arranged not in contact with the insulating substrate; The first micro pile and the heating part are connected through the second micro pile.

[0014] Optionally, the cross section of the microplate along the direction perpendicular to the central axis is any one of a regular polygonal structure, a circular structure, and a non-polygonal structure.

[0015] Optionally, the number of the second micro-piles is one, and the number of the first micro-piles is one or more. When the number of the first micro-piles is multiple, the ends of the multiple first micro-piles connected to the micro-plate are arranged in a matrix or in multiple concentric rings.

[0016] Optionally, the insulating substrate further includes a bottom plate and a side plate; opposite ends of the side plate are connected to the carrying platform and the bottom plate, and the carrying platform, the bottom plate and the side plate enclose the accommodating cavity; The bottom plate is provided with an inlet, and the end of the side plate close to the supporting platform is provided with an outlet; the heat-insulating fluid flows into the accommodating cavity through the inlet and flows out of the accommodating cavity through the outlet.

[0017] Optionally, there are multiple outlets, and the multiple outlets are circumferentially arranged with the central axis as the center.

[0018] Optionally, the thermal insulation fluid may be any one of aerogel, insulating gas, dry air and inert gas.

[0019] Optionally, it further includes a first platform, a second platform and a thickness adjustment member arranged between the electrostatic chuck and the cooling system; The first platform is connected to the bottom plate of the insulating substrate; The first platform and the second platform are connected via the thickness adjusting member, and the second platform is connected to the top of the cooling system; The thickness adjusting member includes a cylinder body connected to the second platform, wherein a contraction and expansion liquid is stored in the cylinder body, and a piston is movably inserted in the cylinder body, the upper end of the piston is fixedly connected to the first platform, and the contraction and expansion liquid is located between the lower end of the piston and the inner bottom wall of the cylinder body. The contraction and expansion liquid in the cylinder body changes its volume according to the thermal expansion and contraction effect due to the change in heat on the insulating substrate and the first platform, so that the end of the piston close to the first platform moves away from or toward the cylinder body, thereby increasing or decreasing the distance between the first platform and the second platform.

[0020] According to a second aspect of an embodiment of the present invention, a plasma processing apparatus is provided, comprising the aforementioned electrostatic chuck and a cooling system.

[0021] Compared with existing technologies, the present invention offers the following advantages: by cleverly storing an insulating fluid within the containment cavity, it successfully isolates the heat bridge between the heating element and the insulating substrate. Furthermore, the carefully designed micro-nano thermal conductor precisely guides heat from the heating element directly to the top plate of the insulating substrate, effectively heating the wafer. This innovative design enables flexible control of the heat conduction path and distribution within the insulating substrate, effectively overcoming the technical bottleneck of traditional electrostatic chucks, which have a fixed heat conduction path and unadjustable distribution, and represents a significant breakthrough in the field of semiconductor device technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic structural diagram of a heating part corresponding to multiple micro-nano heat conducting parts in an embodiment of the present invention.

[0023] Figure 2 It is a structural schematic diagram of multiple heating parts corresponding to multiple micro-nano heat conducting parts in an embodiment of the present invention.

[0024] Figure 3 It is a structural schematic diagram of a plurality of first micropiles provided in the micro-nano heat conducting portion in an embodiment of the present invention.

[0025] Figure 4 2 is a schematic structural diagram of a thickness adjusting member in an embodiment of the present invention.

[0026] Description of reference numerals in the figures: 1. Insulating substrate; 11. Carrying platform; 12. Bottom plate; 13. Side plate; 14. Accommodating cavity; 2. Heating part; 3. Micro-nano heat conduction part; 31. Microplate; 32. First micropile; 33. Second micropile; 4. Thickness adjustment part; 41. Temperature control part; 42. Cylinder; 43. Piston; 5. Wafer; 6. Central axis; 7. Inlet; 8. Outlet; 9. First platform; 10. Second platform. DETAILED DESCRIPTION

[0027] Unless otherwise defined, the technical terms or scientific terms used in this specification should have the common meanings understood by persons having ordinary skills in the technical field to which the present invention belongs. Specific embodiments of the present invention will be described below with reference to the accompanying drawings.

[0028] To address the problems of the prior art, embodiments of the present invention provide an electrostatic chuck for use in plasma processing devices. By cleverly storing an insulating fluid within a containment cavity 14, this electrostatic chuck successfully isolates the heat bridge between the heating portion 2 and the insulating substrate 1. Simultaneously, the carefully designed micro-nano thermal conductive portion 3 precisely guides heat from the heating portion 2 directly to the top plate of the insulating substrate 1, thereby efficiently heating the wafer 5. This innovative design enables flexible regulation of the heat conduction path and distribution within the insulating substrate 1, effectively overcoming the technical bottleneck of conventional electrostatic chucks, where the heat conduction path is fixed and the distribution cannot be adjusted, and represents a significant breakthrough in the field of semiconductor device technology.

[0029] It is worth noting that in the semiconductor field, the etching equipment, deposition equipment and degumming equipment included in the plasma processing device are usually equipped with an electrostatic chuck to achieve fixation and temperature control of the wafer 5. In the etching equipment, the electrostatic chuck is used to stably fix the wafer 5 during the etching process to prevent the wafer 5 from shifting due to high temperature and chemical reactions, and to ensure etching uniformity through precise temperature control. In the deposition equipment, the electrostatic chuck can accurately control the temperature of the wafer 5 to ensure the uniformity and quality of the thin film deposition, especially in the multi-layer thin film deposition process, temperature control is crucial. In the degumming equipment, the electrostatic chuck is used to fix the wafer 5 during the degumming process to prevent the wafer 5 from drifting due to high temperature and solvent effects, and to ensure the consistency of the degumming effect through temperature control. The electrostatic chuck in this application can flexibly adjust the heat conduction path and distribution through its unique heat conduction controllable design, and is suitable for scenarios in the above-mentioned equipment where high precision is required for the temperature control of the wafer 5, effectively improving process consistency and product quality.

[0030] In one embodiment, if Figure 1 and Figure 2 As shown, the electrostatic chuck includes an insulating substrate 1, a heating portion 2 and a micro-nano heat conducting portion 3.

[0031] In one embodiment, if Figure 1 and Figure 2 As shown, the insulating substrate 1 has a carrier 11 for supporting the wafer 5. The insulating substrate 1 has a receiving cavity 14 inside, and a heat-insulating fluid is stored in the receiving cavity 14. In this embodiment, by storing the heat-insulating fluid in the receiving cavity 14 inside the insulating substrate 1, a heat-insulating layer surrounding the heating unit 2 is constructed, thereby effectively limiting the direct conduction of heat generated by the heating unit 2 to the insulating substrate 1, thereby providing a good thermal environment foundation for subsequent guided heat transfer process operations.

[0032] In one embodiment, the shape design of the insulating substrate 1 has a high degree of flexibility and diversity. Specifically, the insulating substrate 1 can be a disc-shaped structure, which is widely used in many application scenarios due to its symmetry and uniformity, and can ensure uniform distribution of heat on the substrate. At the same time, the insulating substrate 1 can also be designed as a regular polygonal structure, such as a cube, hexagon, etc. This structure has unique advantages in certain specific process layouts and can better adapt to different equipment spaces and process requirements. In addition, the insulating substrate 1 can also be a non-regular polygonal structure, such as an irregular polygon or other customized shapes to meet the special needs of a specific process or equipment design. However, the shape of the insulating substrate 1 of the present invention is not limited to the above-mentioned common structures. Its design can be flexibly adjusted and optimized according to factors such as process requirements, equipment layout and space limitations in actual applications to achieve optimal performance. Therefore, although several possible structural forms are listed here, the scope of the shape design of the insulating substrate 1 of the present invention is far more than these, and its diversity and flexibility provide a wide range of applicability for various complex application scenarios.

[0033] In one embodiment, the shape of the accommodating cavity 14 matches the overall shape of the insulating substrate 1. For example, when the insulating substrate 1 is a disc-shaped structure, the accommodating cavity 14 may also be a disc-shaped structure to achieve full utilization of the internal space and uniform distribution of heat. At the same time, the shape of the accommodating cavity 14 may also be optimized according to the flow characteristics of the insulating fluid and the layout of the micro-nano heat conducting portion 3, such as using side walls with a certain curvature or inclination angle to promote the smooth flow and uniform distribution of the insulating fluid, thereby further improving the insulation effect and the controllability of heat conduction. In addition, the shape of the accommodating cavity 14 may also be designed to include multiple separated areas or have a special geometric structure to meet different process requirements and functional requirements. For example, in some application scenarios, by setting the accommodating cavity 14 as multiple separated areas, independent control of heat conduction in different areas can be achieved, thereby improving the temperature control accuracy and flexibility of the entire electrostatic suction cup.

[0034] In one embodiment, the insulating fluid can be any one of aerogel, insulating gas, dry air, and inert gas. These materials, due to their unique physical and chemical properties, exhibit superior thermal insulation performance, effectively blocking the disordered conduction of heat from the heating unit 2 within the electrostatic chuck, ensuring that the heat generated by the heating unit 2 is conducted to the area of ​​the support platform 11 corresponding to the micro-nano heat conducting unit 3, thereby achieving thermal control of the corresponding area of ​​the wafer 5 and achieving uniform heating of the wafer 5.

[0035] Specifically, aerogel is a material with extremely low thermal conductivity, and its internal nanoporous structure can significantly reduce the conduction of heat. For example, the thermal conductivity of silica aerogel is only 0.013 W / (m·K), which makes it perform well in applications that require efficient thermal insulation. Insulating gases, such as sulfur hexafluoride (SF6), not only have good insulating properties, but also have excellent thermal insulation effects due to its high molecular weight and low thermal conductivity. Dry air is a simple and low-cost option with a thermal conductivity of about 0.026 W / (m·K), which can provide sufficient thermal insulation in many conventional applications. Inert gases, such as argon or helium, are often used in environments requiring high purity and high stability due to their stable chemical properties and low thermal conductivity, such as in high vacuum or high-cleanliness semiconductor manufacturing processes.

[0036] In practical applications, by selecting different insulating fluids, the electrostatic chuck's insulation and heat conduction path can be optimized based on specific process requirements and equipment conditions. For example, in etching equipment requiring extremely high thermal insulation performance, aerogel can be used as the insulating fluid; whereas in cost-sensitive deposition equipment, dry air may be a more economical option. This flexibility enables the electrostatic chuck of the present invention to adapt to a variety of different application scenarios, meeting the stringent temperature control requirements of different processes, and further improving the performance and applicability of the electrostatic chuck.

[0037] In one embodiment, if Figure 1 and Figure 2 As shown, the heating part 2 is arranged in the accommodating cavity 14 and embedded in the thermal insulation fluid. Embedding can be understood as the heating part 2 being placed in the thermal insulation fluid. This is to block the heat conduction heat bridge between the heating part 2 and the insulating substrate 1. This embodiment isolates the heating part 2 from the insulating substrate 1 by the thermal insulation fluid, thereby avoiding direct heat conduction to the insulating substrate 1, thereby preventing the disorderly diffusion of heat in the insulating substrate 1. The presence of the thermal insulation fluid effectively isolates the heat conduction path. The arrangement of this embodiment improves the controllability and efficiency of heat conduction, ensures the temperature uniformity and stability of the wafer 5 during the processing process, and at the same time reduces energy loss and improves the performance and reliability of the entire electrostatic chuck.

[0038] In one embodiment, if Figure 1 As shown, the heating portion 2 is located in the accommodating cavity 14 only at the two ends of the insulating substrate 1 in the radial direction (at Figure 1In the embodiment, it can be understood that the two ends in the front-to-back direction are in contact with the front and rear side walls of the accommodating cavity 14, and the other parts are not in contact. The arrangement of this embodiment can minimize the heat conduction area between the heating part 2 and the insulating substrate 1, thereby reducing the disordered diffusion of heat in the insulating substrate 1. Contact only at the two ends allows the heat to be mainly conducted axially to the carrier 11 through the micro-nano heat conducting part 3, rather than being diffused disorderly in the insulating substrate 1. This design not only improves the efficiency and directionality of heat conduction, but also enhances the accuracy of temperature control, ensuring that the wafer 5 can obtain a uniform and stable heat supply during processing, thereby improving process quality and product consistency.

[0039] In one embodiment, a thermal insulation layer is provided at the ends of the heating portion 2 at both ends in the radial direction of the insulating substrate 1 at the contact points with the front side wall and the rear side wall of the accommodating cavity 14. The thermal insulation layer can further reduce the heat conducted from the heating portion 2 to the insulating substrate 1 through the contact point, thereby effectively reducing the disordered diffusion and loss of heat. By providing a thermal insulation layer at the contact point, it can be ensured that most of the heat is accurately conducted to the carrier 11 of the wafer 5 through the micro-nano heat conducting portion 3, rather than being absorbed or dissipated by other parts of the insulating substrate 1 (the part outside the carrier 11). This design not only improves the efficiency and directionality of heat conduction, but also enhances the accuracy and stability of temperature control, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process, thereby improving the process quality and product consistency.

[0040] In one embodiment, the thermal insulation layer can be a variety of materials with excellent thermal insulation properties, such as aerogel, ceramic fiber, polyimide film or silica aerogel. These materials are widely used in the field of thermal insulation due to their low thermal conductivity and high thermal stability. For example, the thermal conductivity of aerogel is extremely low, only 0.013 W / (m·K), which can effectively prevent the conduction of heat; ceramic fiber has good mechanical strength and high temperature resistance, and is suitable for use in high temperature environments; polyimide film is suitable for a variety of complex process environments due to its excellent chemical stability and mechanical properties. By selecting suitable thermal insulation materials, the thermal insulation effect and heat conduction path of the electrostatic chuck can be further optimized according to specific process requirements and equipment conditions, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process, thereby improving the consistency of the process and product quality.

[0041] In one embodiment, the heating portion 2 is connected to two electrodes at both ends of the insulating substrate 1 in the radial direction. The two electrodes provide the required electrical energy to the heating portion 2 via an external power supply. In one embodiment, the electrodes are disposed outside the insulating substrate 1 to prevent the heat generated by the electrodes from affecting the overall thermal conductivity of the insulating substrate 1.

[0042] In one embodiment, the heating part 2 is a heating wire or a heating strip. Heating wires or heating strips are widely used because of their good electrical conductivity and easy processing. However, the heating part 2 of the present invention is not limited to heating wires or heating strips, and other forms of heating elements can also be used, such as heating films, micro heating tubes or other materials or structures that can generate heat. These different heating elements can be selected and designed according to specific process requirements, equipment layout and temperature control accuracy requirements. For example, a heating film can provide a more uniform heat distribution, while a micro heating tube can provide centralized heating in a specific area. By flexibly selecting and designing the form of the heating part 2, the present invention can meet the temperature control requirements in a variety of application scenarios, and further improve the applicability and performance of the electrostatic chuck.

[0043] In one embodiment, if Figure 1 and Figure 2 As shown, the micro-nano thermal conductive portion 3 is arranged in the insulating substrate 1 and is used to connect the heat conduction heat bridge between the heating portion 2 and the supporting platform 11 of the insulating substrate 1. The first part of the micro-nano thermal conductive portion 3 placed in the accommodating cavity 14 is embedded in the thermal insulation fluid to block the radial heat conduction heat bridge between the first part of the micro-nano thermal conductive portion 3 and the insulating substrate 1, so that the heat generated by the heating portion 2 when the current is loaded is axially guided to the supporting platform 11 of the insulating substrate 1 through the micro-nano thermal conductive portion 3 to heat the wafer 5 on the supporting platform 11 of the insulating substrate 1.

[0044] This embodiment can accurately guide the path and distribution of heat. By embedding the first part of the micro-nano heat conducting part 3 in the insulating fluid, the disordered diffusion of heat in the radial direction is effectively blocked, ensuring that heat can only be axially conducted to the supporting platform 11 of the insulating substrate 1 through the micro-nano heat conducting part 3. This design makes heat conduction more concentrated and efficient, avoids the disordered propagation and loss of heat in the insulating substrate 1, and thus achieves uniform heating of the wafer 5. At the same time, this structure can also flexibly adjust the layout and number of the micro-nano heat conducting part 3 according to different process requirements, further optimize the heat conduction path and distribution, improve the accuracy and flexibility of temperature control, ensure the temperature uniformity and stability of the wafer 5 during the processing process, and thus improve the consistency of the process and product quality.

[0045] In one embodiment, if Figure 1 As shown, there are several micro-nano heat conducting parts 3 , the number of the heating parts 2 is set to one, and one heating part 2 is connected to several micro-nano heat conducting parts 3 .

[0046] In this embodiment, a heating part 2 is connected to several micro-nano heat conducting parts 3, which can realize multi-path conduction of heat. This design not only improves the efficiency of heat conduction, but also enables the heat to be more evenly distributed to various areas of the wafer 5. Specifically, the heat generated by a single heating part 2 can be simultaneously conducted to the supporting platform 11 of the insulating substrate 1 through multiple micro-nano heat conducting parts 3, thereby avoiding local overheating caused by heat concentration at a certain point. In addition, the distribution of multiple micro-nano heat conducting parts 3 can be optimized according to the shape and process requirements of the wafer 5 to further ensure the uniform distribution of heat. This structure not only improves the uniformity of heating of the wafer 5, but also enhances the thermal conductivity and reliability of the entire electrostatic chuck, which is particularly important for semiconductor manufacturing processes that require high-precision temperature control.

[0047] In one embodiment, the number of the micro-nano thermal conductive parts 3 is set to 30. Of course, in other embodiments, the number of the micro-nano thermal conductive parts 3 can be 20, 25, 35, 40, 45 or 50, but is not limited to 20, 25, 35, 40, 45 or 50.

[0048] This embodiment is highly flexible and customizable to meet the specific needs of different processes and equipment for heat conduction and distribution. By adjusting the number of micro-nano thermal conductive parts 3, the heat conduction path and distribution density can be precisely controlled, thereby achieving fine regulation of the heating process of the wafer 5. For example, the number of micro-nano thermal conductive parts 3 can be increased in areas that require more concentrated heating, while the number can be reduced in areas with lower heat requirements. This variable quantity configuration enables the electrostatic chuck to adapt to wafers 5 of different sizes and shapes and different process requirements. For example, in high-precision etching or deposition processes, by optimizing the number of micro-nano thermal conductive parts 3, the uniformity of the surface temperature of the wafer 5 can be ensured, and the consistency of the process and product quality can be improved. In addition, this design also allows optimization based on energy consumption and cost-effectiveness in actual production, so that the electrostatic chuck achieves the best balance between performance and economy.

[0049] In one embodiment, if Figure 1 As shown, the heating part 2 is provided below the plurality of micro-nano heat conducting parts 3. For example, the heating part 2 is located on the central axis 6 of the insulating substrate 1. The central axis 6 is a straight line perpendicular to the surface of the carrier 11. Preferably, the central axis 6 is the central axis of the carrier 11. Figure 1 In this embodiment, the central axis 6 coincides with the vertical central axis of the insulating substrate 1. This embodiment enables efficient heat conduction and precise control. Specifically, placing the heating unit 2 below the micro-nano thermal conductive unit 3 ensures that heat is directly and evenly transferred to each micro-nano thermal conductive unit 3, thereby achieving uniform heating of the wafer 5. This layout reduces heat loss and diffusion during the transfer process, improving the efficiency and directionality of heat conduction.

[0050] Furthermore, positioning the heating unit 2 below the micro-nano thermal conductive unit 3 facilitates installation and maintenance in practical applications. This layout ensures a more stable and reliable connection between the heating unit 2 and the micro-nano thermal conductive unit 3, reducing potential contact problems caused by mechanical vibration or thermal expansion. Furthermore, this design effectively utilizes space, making the electrostatic chuck more compact and adaptable to a variety of equipment sizes and process environments.

[0051] Of course, in other examples, the heating portion 2 is not limited to being disposed only on the central axis 6 of the insulating substrate 1. As long as it can ensure that heat can be effectively transferred to the micro-nano heat conducting portion 3 and further transferred to the carrier 11 of the wafer 5, the heating portion 2 can be disposed at any suitable position within the accommodating cavity 14. For example, the heating portion 2 can be offset to the left of the central axis 6 of the insulating substrate 1 to accommodate specific process requirements or equipment layouts. This flexible layout allows the electrostatic chuck to be customized according to different application scenarios and process requirements, thereby improving its applicability and performance in various semiconductor manufacturing processes.

[0052] In one embodiment, if Figure 2 As shown, the micro-nano heat conducting part 3 and the heating part 2 are both provided with a plurality of them. In one embodiment, one heating part 2 is connected to a plurality of micro-nano heat conducting parts 3. In another embodiment, Figure 2 As shown, a plurality of the heating parts 2 are connected to a plurality of the micro-nano heat conducting parts 3 in a one-to-one correspondence.

[0053] This embodiment can achieve fine-grained regulation of heat conduction. Through the flexible combination of multiple heating parts 2 and multiple micro-nano heat conducting parts 3, the distribution and conduction path of heat can be precisely controlled according to different process requirements. For example, when a specific area of ​​the wafer 5 needs to be heated, the heating part 2 and the micro-nano heat conducting part 3 corresponding to the area can be activated separately to achieve local heating. In addition, this design can also achieve uniform regulation of the overall temperature distribution of the wafer 5 by adjusting the power of different heating parts 2, thereby ensuring the temperature uniformity and stability of the wafer 5 during the processing. This flexible heat regulation method not only improves the applicability and performance of the electrostatic chuck, but also improves the consistency of the process and product quality.

[0054] For example, when there are 30 micro-nano thermal conductive portions 3, there are also 30 heating portions 2, thus achieving a one-to-one correspondence between the heating portions 2 and the micro-nano thermal conductive portions 3. Alternatively, when there are 30 micro-nano thermal conductive portions 3, there are 6 heating portions 2. In this case, the number of micro-nano thermal conductive portions 3 connected to a single heating portion 2 can be the same or different. For example, each heating portion 2 can be connected to five micro-nano thermal conductive portions 3. In another example, each heating portion 2 can be connected to a different number of micro-nano thermal conductive portions 3. This will not be further described here.

[0055] In one embodiment, the plurality of micro-nano thermal conductive portions 3 are arranged in an array; the heating portion 2 is located between rows and columns of the array of micro-nano thermal conductive portions 3, wherein each heating portion 2 is connected to at least two micro-nano thermal conductive portions 3 located in the same row or column.

[0056] This embodiment arranges multiple micro-nano thermal conductive parts 3 in an array, and places the heating part 2 between the rows and columns of the array of micro-nano thermal conductive parts 3. Each heating part 2 is connected to at least two micro-nano thermal conductive parts 3 in the same row or column, thereby achieving a uniform heating effect on the insulating substrate 1. At the same time, this arrangement of the micro-nano thermal conductive parts 3 can increase the heating area of ​​the supporting platform 11 of the insulating substrate 1, thereby ensuring that the wafer 5 can be effectively temperature controlled by the device.

[0057] In one embodiment, the orthographic projection area of ​​the heating area formed by the array on the carrying surface of the carrying platform 11 is greater than or equal to the area of ​​the carrying surface of the carrying platform 11 .

[0058] In one embodiment, if Figure 1 and Figure 2 As shown, the insulating substrate 1 has a central axis 6 perpendicular to the surface of the supporting platform 11, and a plurality of the micro-nano thermal conductive parts 3 are arranged around the insulating substrate 1 with the central axis 6 as the center, and each of the heating parts 2 is connected to at least two of the micro-nano thermal conductive parts 3.

[0059] This layout of this embodiment allows heat to be evenly transferred from the heating portion 2 to the periphery of the carrier 11 through the micro-nano heat conducting portion 3, thereby ensuring that the wafer 5 receives a uniform heat distribution on the carrier 11. This design not only improves the efficiency and uniformity of heat transfer, but also enhances the accuracy of temperature control, ensuring that the wafer 5 receives a stable and uniform heat supply during processing, thereby improving process consistency and product quality.

[0060] In one embodiment, the plurality of micro-nano thermal conductive portions 3 form a plurality of concentric circular rings, with the centers of the circular rings located on the central axis 6. The diameters of the concentric circular rings, arranged radially from the central axis 6 toward the edge of the platform 11, gradually increase. Furthermore, the number of micro-nano thermal conductive portions 3 forming each circular ring is also inconsistent, increasing radially from the central axis 6 toward the edge of the platform 11.

[0061] In one embodiment, a plurality of the micro-nano heat conducting parts 3 form a plurality of circular rings, but the plurality of circular rings are not arranged concentrically, and the micro-nano heat conducting parts 3 forming the same circular ring are connected to one heating part 2 .

[0062] This embodiment forms a plurality of micro-nano heat conducting parts 3 into a plurality of non-concentric circular rings, and connects the micro-nano heat conducting parts 3 forming the same circular ring to a heating part 2, so as to achieve independent and precise heating of different areas of the wafer 5. This non-concentric circular ring layout can flexibly adjust the heat distribution of each area according to the specific process requirements of the wafer 5, thereby achieving a more complex temperature control mode. For example, in the case where different temperature treatments are required for the edge and center areas of the wafer 5, this design can independently control the heating power of each area to ensure that each area can reach the required temperature. In addition, this layout can also improve the efficiency of heat conduction and reduce the disordered diffusion of heat in the insulating substrate 1, thereby improving the thermal conductivity and temperature control accuracy of the entire electrostatic chuck, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing, thereby improving the consistency of the process and product quality.

[0063] In one embodiment, there is a gap between the ends of two adjacent micro-nano thermal conductive parts 3 close to the supporting platform 11 , and the size of the gap is greater than or equal to 0.5 μm and less than or equal to 1.5 μm.

[0064] This embodiment effectively prevents direct heat conduction between adjacent micro-nano thermal conductive sections 3 by providing gaps of a specific size between them, thereby avoiding thermal interference between adjacent micro-nano thermal conductive sections 3. This precise gap control ensures that each micro-nano thermal conductive section 3 can independently conduct heat to a specific area of ​​the wafer 5 without being affected by other micro-nano thermal conductive sections 3. This not only improves the accuracy and uniformity of heat conduction, but also enhances the stability of temperature control, ensuring that the wafer 5 receives a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0065] In one embodiment, the end of the micro-nano thermal conductive part 3 close to the carrier 11 (which can be understood as the upper end) is embedded in the carrier 11. This embodiment ensures that heat is directly and evenly conducted to the bottom of the wafer 5 by embedding the end of the micro-nano thermal conductive part 3 in the carrier 11, thereby improving the efficiency and uniformity of heat transfer. This structure not only reduces the loss of heat during the transfer process, but also enhances the thermal contact between the micro-nano thermal conductive part 3 and the carrier 11, so that heat can be transferred from the heating part 2 to the surface of the wafer 5 more quickly. In addition, this design also improves the structural stability and reliability of the entire electrostatic chuck, ensuring that the connection between the micro-nano thermal conductive part 3 and the carrier 11 remains stable during long-term high-temperature operation, thereby improving process consistency and product quality.

[0066] It is worth noting that, in this embodiment, the micro-nano heat conducting portion 3 includes a first portion and a second portion, the first portion is placed in the accommodating cavity 14 , and the second portion is disposed in the supporting platform 11 .

[0067] In one embodiment, if Figure 1 or Figure 2 As shown, the end of the micro-nano heat conducting portion 3 close to the carrier 11 (which can be understood as the upper end) is abutted against the bottom of the carrier 11. In this embodiment, the abutting arrangement forms a good thermal contact between the micro-nano heat conducting portion 3 and the carrier 11, reducing the loss of heat during the transfer process and improving the efficiency of heat conduction. At the same time, this structure also simplifies the manufacturing process and reduces production costs because no additional inlay or fixing process is required. In addition, this design also enhances the overall structural stability of the electrostatic chuck, ensuring that the thermal conductivity between the micro-nano heat conducting portion 3 and the carrier 11 remains stable during high temperature and long-term operation, thereby improving process consistency and product quality.

[0068] It is worth noting that, in this example, the micro-nano heat conducting portion 3 only has a first portion, which is disposed in the accommodating cavity 14 , and the end of the first portion facing the carrier 11 is abutted against the bottom of the carrier 11 .

[0069] In one embodiment, the end of the micro-nano heat conducting portion 3 close to the carrier 11 (which can be understood as the upper end) extends within the carrier 11 in a direction away from the accommodating cavity, and the end of the micro-nano heat conducting portion 3 close to the carrier 11 is flush with the carrier surface of the carrier 11. This embodiment can achieve direct and uniform conduction of heat to the bottom of the wafer 5, while ensuring that the contact between the micro-nano heat conducting portion 3 and the surface of the wafer 5 is more stable and uniform. This design not only improves the efficiency of heat transfer, but also reduces heat loss during the transfer process, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process. In addition, the end of the micro-nano heat conducting portion 3 close to the carrier 11 is flush with the carrier surface of the carrier 11, which can prevent the portion of the micro-nano heat conducting portion 3 protruding from the carrier surface of the carrier 11 from scratching or damaging the wafer 5, thereby improving the integrity of the wafer 5 and the product quality.

[0070] In one embodiment, if Figure 3 As shown, the micro-nano heat conducting part 3 includes a micro-plate 31, a first micro-pile 32 and a second micro-pile 33; the micro-plate 31 is connected to the insulating substrate 1; the first micro-pile 32 is connected to the micro-plate 31, and the first micro-pile 32 is not in contact with the insulating substrate 1; the first micro-pile 32 and the heating part 2 are connected through the second micro-pile 33.

[0071] This embodiment is to achieve efficient heat conduction and precise temperature control. The structural stability of the micro-nano heat conducting part 3 is ensured by the connection between the microplate 31 and the insulating substrate 1. The first micro pile 32 is not in contact with the insulating substrate 1, which avoids the disordered diffusion of heat through the insulating substrate 1 and ensures that the heat is mainly conducted through the micro-nano heat conducting part 3. The second micro pile 33 serves as a bridge connecting the first micro pile 32 and the heating part 2, further optimizing the heat conduction path, so that the heat can be efficiently transferred from the heating part 2 to the micro-nano heat conducting part 3, and finally evenly conducted to the wafer 5. This structural design not only improves the efficiency and uniformity of heat conduction, but also enhances the temperature control accuracy and reliability of the entire electrostatic chuck, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process, thereby improving the consistency of the process and product quality.

[0072] In one embodiment, the cross section of the microplate 31 along the direction perpendicular to the central axis 6 is any one of a regular polygonal structure, a circular structure, and a non-polygonal structure.

[0073] The shape setting in this embodiment can optimize the heat conduction path and distribution according to different process requirements and equipment layouts. For example, the circular structure of the microplate 31 can ensure uniform heat conduction in all directions, which is suitable for heating scenarios that require high symmetry; the regular polygonal structure can provide more concentrated heat conduction in a specific direction, which is suitable for applications that require directional heating; and the non-polygonal structure provides more design flexibility and can be customized according to complex process requirements. This flexible shape selection not only improves the applicability and adaptability of the electrostatic chuck, but also can further optimize the efficiency and uniformity of heat conduction, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process, thereby improving the consistency of the process and product quality.

[0074] In one embodiment, the shape of the first micro-pile 32 can be cylindrical, prismatic, truncated cone or prism-shaped, etc. This diversified shape design can optimize the heat conduction path and distribution according to different process requirements and equipment layouts. For example, cylindrical micro-piles can ensure uniform heat conduction in all directions and are suitable for heating scenarios that require high symmetry; while prismatic micro-piles can provide more concentrated heat conduction in a specific direction and are suitable for applications that require directional heating. In addition, the truncated cone or prism-shaped micro-piles can further optimize the heat conduction efficiency and reduce heat loss during the conduction process through their gradual cross-sectional shape. This flexible shape selection not only improves the applicability and adaptability of the electrostatic chuck, but also can further optimize the efficiency and uniformity of heat conduction, ensuring that the wafer 5 can obtain a uniform and stable heat supply during processing, thereby improving process consistency and product quality.

[0075] Of course, in other embodiments, the first micro-pile 32 is not limited to the cylindrical, prismatic, truncated cone or prism-shaped shapes.

[0076] In one embodiment, the shape of the second micro-piles 33 can be cylindrical, prismatic, truncated cone or prism-shaped, etc. This diversified shape design can optimize the heat conduction path and distribution according to different process requirements and equipment layouts. For example, the cylindrical second micro-piles 33 can ensure uniform heat conduction in all directions, which is suitable for heating scenarios that require high symmetry; while the prismatic second micro-piles 33 can provide more concentrated heat conduction in a specific direction, which is suitable for applications that require directional heating. In addition, the truncated cone or prism-shaped second micro-piles 33 can further optimize the heat conduction efficiency and reduce heat loss during the conduction process through their gradual cross-sectional shape. This flexible shape selection not only improves the applicability and adaptability of the electrostatic chuck, but also can further optimize the efficiency and uniformity of heat conduction, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process, thereby improving the consistency of the process and product quality.

[0077] Of course, in other embodiments, the second micro pile 33 is not limited to the cylindrical, prismatic, truncated cone or prism shape.

[0078] In one embodiment, the number of the second micropile 33 is one, and the number of the first micropile 32 is one, such that the first micropile 32 and the second micropile 33 are arranged in a one-to-one correspondence. In this embodiment, the upper end of the first micropile 32 is preferably connected to the middle of the lower end surface of the microplate 31. Of course, in other embodiments, the upper end of the first micropile 32 is not limited to being connected to the middle of the lower end surface of the microplate 31.

[0079] In one embodiment, if Figure 3 As shown, the number of the first micro-piles 32 is provided in plurality, and the ends (the upper ends can be understood as the upper ends) of the plurality of first micro-piles 32 connected to the micro-plate 31 are arranged in a matrix. Through the matrix arrangement, the plurality of first micro-piles 32 can be evenly distributed on the lower end surface of the micro-plate 31, thereby ensuring that heat can be evenly transferred from the heating part 2 to the first micro-piles 32 through the second micro-piles 33, and then transferred to other parts of the micro-nano heat conducting part 3. This layout not only improves the efficiency of heat conduction, but also enhances the accuracy of temperature control, ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process. In addition, the matrix arrangement design also provides structural stability, so that the entire micro-nano heat conducting part 3 maintains reliable performance under high temperature and long-term operation, thereby improving process consistency and product quality.

[0080] In one embodiment, if Figure 3 As shown, the number of the first micro-piles 32 is multiple, and the ends (which can be understood as the upper ends) of the multiple first micro-piles 32 connected to the micro-plate 31 are arranged in a plurality of concentric rings. The concentric ring arrangement has the same effect as the matrix arrangement described above and will not be repeated here.

[0081] In one embodiment, if Figure 1 and Figure 2 As shown, the insulating substrate 1 further includes a bottom plate 12 and side plates 13; opposite ends of the side plates 13 connect the support platform 11 and the bottom plate 12, and the support platform 11, bottom plate 12, and side plates 13 form the accommodating cavity 14. The bottom plate 12 is provided with an inlet 7, and the end of the side plate 13 near the support platform 11 is provided with an outlet 8; the thermal insulation fluid flows into the accommodating cavity 14 through the inlet 7 and flows out of the accommodating cavity 14 through the outlet 8.

[0082] The function of the inlet 7 and outlet 8 of this embodiment is to realize the circulation flow of the insulating fluid, thereby ensuring that the insulating fluid can continuously and effectively play its insulating role. By introducing the insulating fluid into the accommodating cavity 14 through the inlet 7, the space in the cavity can be filled to form an insulating layer, thereby blocking the heat conduction between the heating part 2 and the insulating substrate 1. The outlet 8 allows the insulating fluid to flow out, which not only helps to maintain the flow state of the insulating fluid and prevent the degradation of fluid performance due to long-term standing, such as viscosity changes, component separation and other problems, but also allows the insulating fluid to be replaced or replenished when needed to ensure that it is always in the best working condition. This design enables the electrostatic suction cup to maintain a stable insulation effect during long-term operation, improves the efficiency and accuracy of heat conduction, and thus improves the performance and reliability of the entire device.

[0083] It is worth noting that in one embodiment, while the support platform 11 of the insulating substrate 1 is being heated, the insulating fluid can remain stationary within the receiving cavity 14, without moving. This embodiment avoids heat disturbance and uneven distribution caused by flow through static insulation, improves the stability and uniformity of heat conduction, ensures that the wafer 5 receives a uniform and stable heat supply during processing, and thus improves process consistency and product quality.

[0084] In one embodiment, when the supporting platform 11 of the insulating substrate 1 is heated, the insulating fluid circulates in the containing cavity 14 through the inlet 7 and the outlet 8. The circulating insulating fluid in this embodiment can continuously remove excess heat generated during the heating process, prevent heat from accumulating in the containing cavity 14, and thus maintain the thermal insulation performance of the insulating fluid stable. This dynamic thermal management method not only improves the efficiency and uniformity of heat conduction, but also enhances the temperature control accuracy and stability of the entire electrostatic chuck. Through the circulating flow, the insulating fluid can better play its insulating role, reduce the disordered diffusion of heat in the insulating substrate 1, and ensure that the wafer 5 can obtain a uniform and stable heat supply during the processing process.

[0085] In one embodiment, there are multiple outlets 8 , and the multiple outlets 8 are circumferentially arranged around the central axis 6 .

[0086] In one embodiment, if Figure 1 、 Figure 2 and Figure 4 As shown, the electrostatic chuck further includes a first platform 9, a second platform 10 and a thickness adjusting member 4; the first platform 9 is connected to the bottom plate 12 of the insulating substrate 1; the first platform 9 and the second platform 10 are connected through the thickness adjusting member 4.

[0087] In one embodiment, the first platform 9 and the second platform 10 both have a plate-like structure, and the specific structure can be adapted to the structure of the insulating substrate 1. The sizes of the first platform 9 and the second platform 10 can be the same or different, but the sizes of the first platform 9 and the second platform 10 are both larger than the size of the insulating substrate 1.

[0088] In one embodiment, the number of the thickness adjusting member 4 is one. In this embodiment, the thickness adjusting member 4 is disposed on the central axis 6 of the first platform 9 and the second platform 10 .

[0089] In one embodiment, the thickness adjusting members 4 are provided in a plurality, for example, 3, 4, or 5, but are not limited to 3, 4, or 5. The plurality of thickness adjusting members 4 may be arranged equidistantly along the horizontal direction. Alternatively, the plurality of thickness adjusting members 4 may be arranged in a ring-like shape equidistantly around the central axis 6 of the first platform 9.

[0090] In this embodiment, multiple thickness adjustment members 4 can ensure that the thickness of the entire platform is adjusted more evenly when the temperature changes, avoiding platform deformation caused by uneven local expansion or contraction. This design not only improves the temperature adjustment accuracy of the electrostatic chuck, but also enhances its adaptability and reliability under complex process conditions. In addition, the setting of multiple thickness adjustment members 4 can also be flexibly adjusted according to different process requirements, further optimizing the performance of the electrostatic chuck and ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process, thereby improving the consistency of the process and product quality.

[0091] In one embodiment, if Figure 4 As shown, the thickness adjusting member 4 further includes a cylinder 42 connected to the second platform 10. A contraction / expansion liquid is stored in the cylinder 42, and a piston 43 is movably inserted into the cylinder 42. The upper end of the piston 43 is fixedly connected to the first platform 9. The contraction / expansion liquid is located between the lower end of the piston 43 and the inner bottom wall of the cylinder 42. The contraction / expansion liquid in the cylinder changes volume due to the thermal expansion and contraction effect caused by changes in the heat on the insulating substrate and the first platform, causing the end of the piston near the first platform to move away from or toward the cylinder, thereby increasing or decreasing the distance between the first and second platforms.

[0092] In this embodiment, the thickness adjustment member 4 can be dynamically adjusted according to the heat generated by the heating part 2 and the micro-nano heat conducting part 3 during operation. When the heating part 2 is working, the heat generated is conducted to the insulating substrate 1 through the micro-nano heat conducting part 3, and then to the first platform 9, causing the temperature of the shrinkage liquid to rise. At this time, the shrinkage liquid in the thickness adjustment member 4 expands due to the thermal expansion and contraction effect, pushing the distance between the first platform 9 and the second platform 10 to change. This design enables the electrostatic chuck to automatically adjust the thickness of the electrostatic chuck according to the actual operating temperature. The thickness can be understood as the dimension in the vertical direction, which is specifically achieved by changing the distance between the first platform 9 and the second platform 10, thereby ensuring that the wafer 5 can obtain a uniform and stable heat supply during the processing process, while reducing the risk of deformation or damage to the wafer 5 due to temperature changes, thereby improving process consistency and product quality.

[0093] Specifically, when the temperature changes, the expansion-contraction fluid changes volume due to the thermal expansion and contraction effect. When the temperature rises, the expansion-contraction fluid expands, pushing piston 43 upward, thereby increasing the distance between first platform 9 and second platform 10. When the temperature drops, the expansion-contraction fluid contracts, and piston 43 moves downward under external pressure or its own elasticity, reducing the distance between first platform 9 and second platform 10. This design enables thickness adjustment member 4 to automatically adjust the distance between first platform 9 and second platform 10 based on temperature changes, thereby dynamically adjusting the thickness of the electrostatic chuck and ensuring that wafer 5 receives a uniform and stable heat supply during processing.

[0094] In one embodiment, if Figure 4 As shown, the thickness adjusting member 4 further includes a temperature control portion 41, which is fixed to the cylinder 42 and has a heating end extending into the shrinking and expanding liquid. The arrangement of the temperature control portion 41 allows for more precise temperature control of the shrinking and expanding liquid.

[0095] In one embodiment, the temperature control portion 41 may be a conductive plate that conducts electricity and generates heat, but is not limited to being a conductive plate that conducts electricity and generates heat.

[0096] In one embodiment, the first platform 9 , the second platform 10 and the piston 43 are all made of heat-conducting materials.

[0097] In one embodiment, a cooling system is provided at the bottom of the second platform 10 to cool the entire electrostatic chuck after processing of the wafer 5. It is worth noting that both the cooling system and the electrostatic chuck are located within the process chamber, and the cooling system utilizes existing technology, which will not be further described here.

[0098] In this embodiment, when the insulating substrate 1 experiences a temperature change during heating, the first and second platforms 9, 10, made of thermally conductive material, respond quickly, effectively transferring heat to the piston 43 and the expansion / contraction liquid. This rapid heat transfer ensures that the expansion / contraction liquid promptly changes volume due to thermal expansion and contraction, thereby pushing the piston 43 to move, increasing the distance between the first and second platforms 9, 10. This in turn moves the insulating substrate 1 away from the cooling system, breaking or reducing the heat bridge between the insulating substrate 1 and the cooling system, and preventing heat loss from the insulating substrate 1 as it is transferred to the cooling system.

[0099] Specifically, when the temperature of the insulating substrate 1 increases, the distance between the first platform 9 and the second platform 10 becomes larger, so that the insulating substrate 1 is away from the cooling system, preventing the influence of heat conduction to the cooling system on the temperature of the insulating substrate 1. When the temperature of the insulating substrate 1 decreases, the distance between the first platform 9 and the second platform 10 becomes smaller, so that the insulating substrate 1 is close to the cooling system, and the heat on the insulating substrate 1 is quickly conducted to the cooling system, thereby improving the cooling process of the insulating substrate 1. It should be noted that during the cooling process of the insulating substrate 1, a coolant is introduced into the cooling system, and the existing technology is adopted here, which will not be described in detail here. In response to the problems existing in the existing technology, an embodiment of the present invention also provides a plasma processing device, including the above-mentioned electrostatic chuck.

[0100] In the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise clearly defined.

[0101] The above description of the embodiments is intended to facilitate understanding and application of the present invention by those skilled in the art. It will be apparent to those skilled in the art that various modifications to these embodiments can be readily made and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the embodiments described herein, and improvements and modifications made by those skilled in the art based on the disclosure without departing from the scope and spirit of the present invention are within the scope of the present invention.

Claims

1. An electrostatic chuck, characterized in that: Applied to a plasma processing device, the electrostatic chuck comprises: An insulating substrate, wherein the insulating substrate has a carrier for carrying a wafer, and the interior of the insulating substrate has a receiving cavity, wherein the receiving cavity stores a heat-insulating fluid; a heating portion, disposed in the accommodating cavity and embedded in the heat-insulating fluid to block a heat-conducting heat bridge between the heating portion and the insulating substrate; A micro-nano thermal conductive portion is provided in the insulating substrate and is used to connect the heat conduction heat bridge between the heating portion and the supporting platform of the insulating substrate. The first portion of the micro-nano thermal conductive portion placed in the accommodating cavity is embedded in the thermal insulation fluid to block the radial heat conduction heat bridge between the first portion of the micro-nano thermal conductive portion and the insulating substrate, so that the heat generated by the heating portion when current is loaded is axially guided to the supporting platform of the insulating substrate through the micro-nano thermal conductive portion to heat the wafer on the supporting platform.

2. The electrostatic chuck according to claim 1, wherein There are a plurality of micro-nano heat conducting parts, and the number of the heating parts is set to one. One heating part is connected to a plurality of the micro-nano heat conducting parts.

3. The electrostatic chuck according to claim 1, wherein There are a plurality of micro-nano heat conducting parts and a plurality of heating parts; one heating part is connected to a plurality of micro-nano heat conducting parts, or a plurality of heating parts are connected to a plurality of micro-nano heat conducting parts in a one-to-one correspondence.

4. The electrostatic chuck according to claim 3, wherein: The plurality of micro-nano heat conducting portions are arranged in an array; the heating portion is located between rows and columns of the micro-nano heat conducting portion array, wherein each heating portion is connected to at least two micro-nano heat conducting portions located in the same row or column.

5. The electrostatic chuck according to claim 2 or 3, wherein: The insulating substrate has a central axis perpendicular to the carrying surface of the carrying platform, and a plurality of the micro-nano heat conducting parts are arranged around the insulating substrate with the central axis as the center, and each of the heating parts is connected to at least two of the micro-nano heat conducting parts.

6. The electrostatic chuck according to claim 2 or 3, wherein: There is a gap between two adjacent micro-nano heat conducting parts close to the end of the supporting platform, and the size of the gap is greater than or equal to 0.5 μm and less than or equal to 1.5 μm.

7. The electrostatic chuck according to claim 1, wherein: The end of the micro-nano heat conducting portion close to the carrier platform is embedded in the carrier platform, or the end of the micro-nano heat conducting portion close to the carrier platform is arranged in contact with the bottom of the carrier platform.

8. The electrostatic chuck according to claim 7, wherein: The end of the micro-nano heat conducting portion close to the carrying platform extends in the carrying platform in a direction away from the accommodating cavity, and the end of the micro-nano heat conducting portion close to the carrying platform is arranged flush with the carrying surface of the carrying platform.

9. The electrostatic chuck according to claim 1, wherein: The heating part is a heating wire or a heating strip.

10. The electrostatic chuck according to claim 5, wherein: The micro-nano heat conducting part includes a micro-plate, a first micro-pile and a second micro-pile; The microplate is connected to the insulating substrate; The first micro pile is connected to the micro plate, and the first micro pile is arranged not in contact with the insulating substrate; The first micro pile and the heating part are connected through the second micro pile.

11. The electrostatic chuck according to claim 10, wherein: The cross section of the microplate along the direction perpendicular to the central axis is any one of a regular polygonal structure, a circular structure, and a non-polygonal structure.

12. The electrostatic chuck according to claim 10, wherein: The number of the second micro pile is one, and the number of the first micro pile is one or more. When the number of the first micro pile is multiple, the ends of the multiple first micro piles connected to the micro plate are arranged in a matrix or in multiple concentric rings.

13. The electrostatic chuck according to claim 10, wherein: The insulating substrate further includes a bottom plate and a side plate; opposite ends of the side plate are connected to the supporting platform and the bottom plate, and the supporting platform, the bottom plate and the side plate form the accommodating cavity; The bottom plate is provided with an inlet, and the end of the side plate close to the supporting platform is provided with an outlet; the heat-insulating fluid flows into the accommodating cavity through the inlet and flows out of the accommodating cavity through the outlet.

14. The electrostatic chuck according to claim 13, wherein: There are multiple outlets, and the multiple outlets are circumferentially arranged with the central axis as the center.

15. The electrostatic chuck according to claim 1, wherein The thermal insulation fluid is any one of aerogel, insulating gas, dry air and inert gas.

16. The electrostatic chuck according to claim 10, wherein: Also included are a first platform, a second platform, and a thickness adjustment member disposed between the electrostatic chuck and the cooling system; The first platform is connected to the bottom plate of the insulating substrate; The first platform and the second platform are connected via the thickness adjusting member, and the second platform is connected to the top of the cooling system; The thickness adjusting member includes a cylinder body connected to the second platform, wherein a contraction and expansion liquid is stored in the cylinder body, and a piston is movably inserted in the cylinder body, the upper end of the piston is fixedly connected to the first platform, and the contraction and expansion liquid is located between the lower end of the piston and the inner bottom wall of the cylinder body. The contraction and expansion liquid in the cylinder body changes its volume according to the thermal expansion and contraction effect due to the change in heat on the insulating substrate and the first platform, so that the end of the piston close to the first platform moves away from or toward the cylinder body, thereby increasing or decreasing the distance between the first platform and the second platform.

17. A plasma processing device, characterized in that: The electrostatic chuck comprises the electrostatic chuck according to any one of claims 1 to 16, and a cooling system.

Images