Semiconductor structure, manufacturing method and electronic device

Abstract

The invention relates to the technical field of semiconductors, and discloses a semiconductor structure, a manufacturing method and an electronic device.The semiconductor structure comprises a substrate, a functional layer, a first electrode, a second electrode and a first thermoelectric body, the first electrode and the second electrode are arranged on the side, away from the substrate, of the functional layer, and the first thermoelectric body is arranged in the substrate; the first thermoelectric body comprises a first P-type body and a first N-type body which are arranged along a first direction, and the extension directions of the first P-type body and the first N-type body intersect with the surface of the substrate; each of the first P-type body and the first N-type body comprises a first connecting part, a second connecting part and a middle connecting part, the length of the first connecting part in the first direction is not equal to the length of the middle connecting part in the first direction, and the length of the second connecting part in the first direction is equal to the length of the first connecting part in the first direction; the heat flux density of the first thermoelectric body is increased, the temperature gradient is increased, the heat dissipation or heating effect of the first thermoelectric body is better, and the heat management efficiency of the semiconductor structure is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology and provides a semiconductor structure, a manufacturing method and an electronic device. Background Art

[0002] To support the efficient utilization and sustainable development of renewable energy, efficient power management has become a key technology in power electronics. Wide-bandgap and ultra-wide-bandgap power devices, with their higher operating voltages, faster switching speeds, higher power density, and greater efficiency, are becoming widely used to enhance renewable energy generation, transmission, conversion, and application.

[0003] However, the heat accumulation problem of small-size chips under high-power conditions has become a key bottleneck restricting their application and development. Therefore, how to improve the thermal management efficiency of semiconductor devices has become a technical problem that needs to be urgently solved in this field. Summary of the Invention

[0004] Embodiments of the present application provide a semiconductor structure, a manufacturing method, and an electronic device to improve the thermal management efficiency of the semiconductor structure.

[0005] The specific technical solutions provided in this application are as follows: In a first aspect, an embodiment of the present application provides a semiconductor structure, comprising: a substrate and a functional layer disposed on the substrate, the functional layer comprising a transistor; The semiconductor structure further includes a thermoelectric structure, which includes a first electrode, a second electrode and a first thermoelectric body, wherein the first electrode and the second electrode are respectively arranged on a side of the functional layer facing away from the substrate, and the first thermoelectric body is arranged in the substrate; The first thermoelectric body includes a first P-type body and a first N-type body arranged along a first direction, and the first direction is parallel to the substrate surface; the extension direction of the first P-type body and the first N-type body intersects with the substrate surface; the first P-type body and the first N-type body are connected, the first P-type body is also connected to the first electrode, and the first N-type body is also connected to the second electrode, and the first P-type body and the first N-type body each include: a first connecting portion, a second connecting portion and an intermediate connecting portion, the length of the first connecting portion along the first direction is not equal to the length of the intermediate connecting portion along the first direction, and the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction.

[0006] In a second aspect, an embodiment of the present application further provides a method for manufacturing a semiconductor structure, comprising: forming a functional layer on the first substrate, wherein the functional layer includes a transistor; A first P-type body and a first N-type body are formed on a second substrate, each of the first P-type body and the first N-type body comprising: a first connecting portion, a second connecting portion, and an intermediate connecting portion; the length of the first connecting portion along a first direction is not equal to the length of the intermediate connecting portion along the first direction; the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction; the first P-type body and the first N-type body are arranged along a first direction parallel to a surface of the second substrate; the extension directions of the first P-type body and the first N-type body intersect with the surface of the second substrate; the first P-type body and the first N-type body are connected; Bonding a surface of the second substrate on which the first P-type body and the first N-type body are formed to a surface of the first substrate facing away from the functional layer, so that the first substrate and the second substrate constitute a substrate; A first electrode and a second electrode are formed on the functional layer, wherein the first electrode is connected to the first P-type body, and the second electrode is connected to the first N-type body.

[0007] In a third aspect, an embodiment of the present application further provides a method for manufacturing a semiconductor structure, comprising: forming a functional layer on the first substrate, wherein the functional layer includes a transistor; A first P-type body and a first N-type body are formed on a side of the first substrate away from the functional layer, each of the first P-type body and the first N-type body comprising: a first connecting portion, a second connecting portion, and an intermediate connecting portion; the length of the first connecting portion along a first direction is not equal to the length of the intermediate connecting portion along the first direction; the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction; the first P-type body and the first N-type body are arranged along a first direction parallel to a surface of the first substrate; the extension directions of the first P-type body and the first N-type body intersect with the surface of the first substrate; the first P-type body and the first N-type body are connected; A second base is formed on one side of the first base where the first P-type body and the first N-type body are formed, and the first base and the second base constitute a substrate; A first electrode and a second electrode are formed on a side of the functional layer away from the substrate. The first electrode is connected to the first P-type body, and the second electrode is connected to the first N-type body.

[0008] In a fourth aspect, an embodiment of the present application provides an electronic device, comprising: a semiconductor structure as described in the first aspect above.

[0009] The beneficial effects of this application are as follows: A semiconductor structure, a manufacturing method, and an electronic device proposed in the embodiments of the present application include: a substrate and a functional layer provided on the substrate, the functional layer including a transistor, the semiconductor structure also including a thermoelectric structure, the thermoelectric structure including a first electrode, a second electrode, and a first thermoelectric body, the first electrode and the second electrode are respectively provided on the side of the functional layer away from the substrate, the first thermoelectric body is provided in the substrate, the first thermoelectric body includes a first P-type body and a first N-type body arranged along a first direction, the first direction is parallel to the substrate surface; the extension direction of the first P-type body and the first N-type body intersects with the substrate surface; the first P-type body and the first N-type body are provided. The first P-type body is connected to the first electrode, and the first N-type body is also connected to the second electrode. The first P-type body and the first N-type body both include: a first connecting portion, a second connecting portion and an intermediate connecting portion. The length of the first connecting portion along the first direction is not equal to the length of the intermediate connecting portion along the first direction, and the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction. In this way, the cross-sectional area of ​​the intermediate connecting portion of the first thermoelectric body becomes smaller, the heat flux density becomes larger, and the temperature difference between the two ends of the first thermoelectric body becomes larger, thereby optimizing the heat dissipation or heating effect of the first thermoelectric body, thereby improving the thermal management efficiency of the semiconductor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 A schematic diagram of a connection between a semiconductor device and a heat treatment device provided in the related art; Figure 2 A cross-sectional view of a first semiconductor structure provided in an embodiment of the present application; Figure 3 A cross-sectional view of a first thermoelectric body provided in an embodiment of the present application; Figure 4 A cross-sectional view of a second thermoelectric body provided in an embodiment of the present application; Figure 5 A cross-sectional view of a second semiconductor structure provided in an embodiment of the present application; Figure 6 A cross-sectional view of a third semiconductor structure provided in an embodiment of the present application; Figure 7 A cross-sectional view of a fourth semiconductor structure provided in an embodiment of the present application; Figure 8 A cross-sectional view of a fifth semiconductor structure provided in an embodiment of the present application; Figure 9 A schematic diagram showing the connection between the temperature sensor and the temperature processor provided in an embodiment of the present application; Figure 10 A cross-sectional view of a sixth semiconductor structure provided in an embodiment of the present application; Figure 11 A schematic flow chart of a method for manufacturing a first semiconductor structure provided in an embodiment of the present application; Figure 12 A schematic diagram of a process for manufacturing a first semiconductor device structure provided in an embodiment of the present application; Figure 13 A schematic flow chart of a method for manufacturing a second semiconductor structure provided in an embodiment of the present application; Figure 14 A schematic diagram of a process for manufacturing a second semiconductor device structure provided in an embodiment of the present application; Figure 15 A schematic structural diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0011] The following is a detailed description of a semiconductor structure, a method for manufacturing the same, and a specific embodiment of an electronic device provided by an embodiment of the present invention, in conjunction with the accompanying drawings. It should be noted that the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0012] In order to dissipate heat and heat the semiconductor device, in the related art, an additional heat treatment device is provided for the semiconductor device after the semiconductor device is manufactured, that is, an additional heat treatment device is added during the packaging process of the semiconductor device. Figure 1 As shown, during the specific packaging process, a thermal processor is placed on the bottom or top of the completed semiconductor device. This transfers heat from the semiconductor device to the thermal processor for processing, thereby achieving heat dissipation and heating. However, the placement of the thermal processor on the periphery of the semiconductor device results in a larger semiconductor device package volume. Furthermore, the additional thermal management structure increases the device's heat transfer path, reducing thermal management efficiency.

[0013] In the embodiments of the present application, a thermoelectric structure is incorporated into the interior of a semiconductor device. Specifically, during the semiconductor device fabrication process, the thermoelectric structure is embedded into the substrate, so that the finished semiconductor device itself includes the thermoelectric structure. Furthermore, because the thermoelectric structure embedded in the substrate is closer to the semiconductor device itself, the heat transfer path is shortened, and the thermoelectric structure achieves better heat dissipation or heating. This eliminates the need for a thermal processor to be placed outside the semiconductor device during packaging, thereby reducing the size of the semiconductor device package.

[0014] The structural composition of the semiconductor structure is introduced below with reference to the accompanying drawings.

[0015] The present application provides a semiconductor structure. Figure 2As shown, it includes: a substrate 100 and a functional layer 20 provided on the substrate 100, and the functional layer 20 includes transistors.

[0016] The substrate 100 and the functional layer 20 may be made of P-type materials or N-type materials, and the corresponding semiconductor structure may be a P-type transistor or an N-type transistor, which is not specifically limited here.

[0017] The functional layer 20 may include a buffer layer 200 , a channel layer 300 , a barrier layer 400 and a passivation layer 500 . The buffer layer 200 , the channel layer 300 , the barrier layer 400 and the passivation layer 500 may be formed on the substrate 100 by multiple epitaxy processes, which is not specifically limited here.

[0018] The semiconductor structure further includes a thermoelectric structure 001 , which includes a first electrode T1 , a second electrode T2 and a first thermoelectric body 900 . The first electrode T1 and the second electrode T2 are respectively arranged on a side of the functional layer 20 facing away from the substrate 100 . The first thermoelectric body 900 is arranged in the substrate 100 .

[0019] In order to achieve heat dissipation and heating of the device, the semiconductor structure in the embodiment of the present application further includes a thermoelectric structure 001, see Figure 2 As shown, the first electrode T1 and the second electrode T2 in the thermoelectric structure 001 are respectively arranged on the side of the functional layer 20 facing away from the substrate 100. When heat dissipation or heating of the device is required, current is connected to the first electrode T1 and the second electrode T2. For example, a positive current is connected to the first electrode T1 and the second electrode T2 is grounded; alternatively, the first electrode T1 is grounded and the second electrode T2 is connected to a positive current.

[0020] It should be noted that whether the first electrode T1 (or the second electrode T2 ) is connected to a positive current or grounded depends on whether the first electrode T1 (or the second electrode T2 ) is connected to the first P-type body 901 or the first N-type body 902 .

[0021] See Figure 2 As shown, the first thermoelectric body 900 includes a first P-type body 901 and a first N-type body 902 arranged along a first direction F1. The first direction F1 is parallel to the surface of the substrate 100. The first direction F1 is Figure 2 In the direction indicated by F1, the extension direction of the first P-type body 901 and the first N-type body 902 intersects the surface of the substrate 100, the first P-type body 901 and the first N-type body 902 are connected, the first P-type body 901 is also connected to the first electrode T1, and the first N-type body 902 is also connected to the second electrode T2, see Figure 2 and Figure 3As shown, the cross-sectional shapes of the first P-type body 901 and the first N-type body 902 parallel to the second direction F2 are both dumbbell-shaped. Figure 3 As shown, the first P-type body 901 and the first N-type body 902 in the embodiment of the present application each include three parts: a first connecting portion, an intermediate connecting portion and a second connecting portion. Figure 3 As shown, the first P-type body 901 includes a first connecting portion 9011, an intermediate connecting portion 9012, and a second connecting portion 9013; the first N-type body 902 includes a first connecting portion 9021, an intermediate connecting portion 9022, and a second connecting portion 9023. Taking the first P-type body 901 as an example, the length of the first connecting portion 9011 along the first direction F1 is not equal to the length of the intermediate connecting portion 9012 along the first direction F1, while the length of the second connecting portion 9013 along the first direction F1 is equal to the length of the first connecting portion 9011 along the first direction F1. Typically, the first connecting portion 9011 and the second connecting portion 9013 are arranged parallel to each other, and the intermediate connecting portion 9012 connects the first connecting portion 9011 and the second connecting portion 9013 and is centrally located, thereby forming the aforementioned dumbbell shape.

[0022] It should also be noted that the operating principle of the thermoelectric structure 001 is the Peltier effect, a thermoelectric conversion phenomenon in which heat is absorbed and released at the two junctions when two different conductors (or semiconductors) form a loop and current flows through them. In this embodiment of the present application, to better dissipate heat and heat the semiconductor structure, multiple first thermoelectric bodies 900 are disposed within the substrate 100. These first thermoelectric bodies 900 include multiple first P-type bodies 901 and multiple first N-type bodies 902. These first P-type bodies 901 and first N-type bodies 902 are devices that utilize the Peltier effect.

[0023] See Figure 2 As shown, the plurality of first P-type bodies 901 and the plurality of first N-type bodies 902 are disposed inside the substrate 100. The plurality of first P-type bodies 901 and the plurality of first N-type bodies 902 are arranged along a first direction F1 parallel to the surface of the substrate 100 until the first P-type bodies 901 and the first N-type bodies 902 are respectively connected to electrodes (the first electrode T1 or the second electrode T2). Figure 2 As shown, the first P-type body 901 and the first N-type body 902 are vertically arranged inside the substrate 100, that is, the extension directions of the first P-type body 901 and the first N-type body 902 intersect with the surface of the substrate 100. Preferably, the extension directions of the first P-type body 901 and the first N-type body 902 are perpendicular to the first direction F1. Of course, in some cases, the extension directions of the second P-type body 1001 and the second N-type body 1002 may not be perpendicular to the first direction F1.

[0024] To ensure proper operation of the first thermoelectric element 900, the plurality of first P-type elements 901 and the plurality of first N-type elements 902 are alternately arranged along the first direction F1 and form a pair, i.e., the first P-type elements 901 and the first N-type elements 902 are connected. In practice, the simplest first thermoelectric element 900 consists of only one first P-type element 901 and one first N-type element 902 connected.

[0025] At the same time, in order to ensure that the plurality of first P-type bodies 901 and the plurality of first N-type bodies 902 can dissipate heat or heat under the Peltier effect, the first P-type bodies 901 are further connected to the first electrode T1, and the first N-type bodies 902 are further connected to the second electrode T2. Figure 2 As shown, on the basis of the first P-type body 901 being connected to the first electrode T1 and the first N-type body 902 being connected to the second electrode T2, when a positive current is connected to the first electrode T1 and the second electrode T2 is grounded, the current flowing in from the first electrode T1 first passes through the first P-type body 901, and then passes through the first N-type body 902 to be provided to the first P-type body 901 of the next first thermoelectric body 900, until the first N-type body 902 of the last first thermoelectric body 900 is connected to the grounded second electrode T2. At this time, the ends 9011 and 9021 of the thermoelectric body closer to the chip functional layer will become hot ends, and the ends 9013 and 9023 away from the functional layer will become cold ends. In this way, the thermoelectric body can pass through under the action of the above current. The Peltier effect conducts heat to the chip's functional layer, achieving heating. When the first electrode T1 is grounded and a positive current is connected to the second electrode T2, the current flowing in from the second electrode T2 first passes through the first N-type body 902, and then through the first N-type body 902 to the first P-type body 901 of the next first thermoelectric body 900, until the first P-type body 901 of the last first thermoelectric body 900 is connected to the grounded first electrode T1. At this time, the ends 9011 and 9021 of the thermoelectric body closer to the chip's functional layer will become cold ends, and the ends 9013 and 9023 farther away from the functional layer will become hot ends. In this way, the thermoelectric body can quickly cool the chip's functional layer through the Peltier effect under the action of the above-mentioned current, achieving heat dissipation.

[0026] In order to achieve better heat dissipation or heating effects, the first connecting portion 9011, the middle connecting portion 9012 and the second connecting portion 9013 are usually formed in one piece. Figure 3As shown, the cross-sectional widths of the first connection portion 9011 and the second connection portion 9013 are both greater than the cross-sectional width of the middle connection portion 9012. The cross section here is a plane parallel to the second direction F2. On the one hand, the wider first connection portion 9011 and the second connection portion 9013 make the contact area at the connection between the first P-type body 901 and the first N-type body 902 larger, which can reduce the contact resistance, reduce the concentration of thermal stress, and improve the reliability of the device. On the other hand, the narrow middle connection portion 9012, the wider first connection portion 9011, and the wider second connection portion 9013 form the first thermoelectric body 900. That is, the first thermoelectric body 900 adopts a design with thick ends and thin middle. For the middle connection portion 9012 with a smaller cross-sectional area, the heat flux density (q=Q / A) is significantly improved. According to Fourier's law of heat conduction (q= k T), the increase in heat flux density directly leads to the local temperature gradient ( T) is enhanced, thereby forming a higher temperature difference in the area where the middle connecting portion 9012 is located. Compared with the middle connecting portion 9012, the first connecting portion 9011 and the second connecting portion 9013 at the two ends have a larger cross-sectional area and a smaller contact thermal resistance, which can enable the hot end to absorb heat more efficiently and the cold end to dissipate heat more efficiently, so that the first P-type body 901 (or the first N-type body 902) as a whole maintains a larger temperature difference, thereby achieving a better heat dissipation or heating effect of the first P-type body 901 (or the first N-type body 902).

[0027] During the fabrication of the thermoelectric structure, to maximize heat dissipation or heating of the first thermoelectric elements 900, as many first thermoelectric elements 900 as possible should be arranged within the substrate. This is to maximize the accumulation of the Peltier effect within the limits of process feasibility. During the specific fabrication process, the length of the first and second connecting portions 9011, 9013 along the first direction F1 generally does not exceed 50 μm. This ensures a better temperature gradient between the first and second connecting portions 9011, 9013 at the ends and the middle connecting portion 9012. At the same time, the cross-sectional area of ​​9012 should not be too small, thereby generating excessive Joule heating.

[0028] In the embodiment of the present application, the ratio between the length of the first connecting portion 9011 (or the second connecting portion 9013) along the first direction F1 and the length of the intermediate connecting portion 9012 along the first direction F1 is typically between 2:1 and 4:1. In actual manufacturing, considering the constraints of the manufacturing process, if the ratio is less than 2:1, the cross-sectional area variation of the intermediate connecting portion 9012 in the actual manufacturing process may not be ideal due to process errors. In other words, the dumbbell-shaped structure may not be obvious, and the overall temperature gradient of the first thermoelectric body 900 may not be significantly improved. Therefore, the ratio between the length of the first connecting portion 9011 along the first direction F1 and the length of the intermediate connecting portion 9012 along the first direction F1 is typically greater than 2:1.

[0029] Furthermore, a ratio exceeding 4:1 can lead to concentrated thermal stress at the connection between the first connecting portion 9011 (or the second connecting portion 9013) and the intermediate connecting portion 9012, thereby increasing the risk of cracking or even failure at the connection under reliability requirements such as thermal cycling, leading to a sharp decrease in the reliability of the first thermoelectric element 900. Therefore, the ratio between the length of the first connecting portion 9011 (or the second connecting portion 9013) along the first direction F1 and the length of the intermediate connecting portion 9012 along the first direction F1 in the first thermoelectric element 900 is typically between 2:1 and 4:1.

[0030] For example, 2 mm Taking a 1mm-sized gallium nitride power transistor chip as an example, the length of the thermoelectric structure along the second direction F2 is 80μm, where the second direction F2 is perpendicular to the first direction F1. The lengths of the first connecting portion 9011 and the second connecting portion 9013 along the first direction F1 are 9μm, and the length of the middle connecting portion 9012 along the first direction F1 is 3μm, that is, the ratio between the above lengths is 3:1. In this way, approximately 3,000 groups of first thermoelectric bodies 900 can be arranged in the substrate of the above gallium nitride power transistor chip to form the thermoelectric structure 001, thereby achieving efficient thermal management of the device.

[0031] In addition, since the thermoelectric structure 001 is disposed in the substrate, and considering that a heat dissipation structure 1200 is also disposed on the side of the semiconductor substrate 100 away from the functional layer 20 , the length of the first thermoelectric body 900 along the second direction F2 is usually no more than 200 μm.

[0032] In addition, see Figure 4 As shown, the thermoelectric structure 001 further includes a second thermoelectric body 1000 , which is disposed in the substrate 100 .

[0033] See Figure 5As shown, in the embodiment of the present application, the thermoelectric structure 002 includes, in addition to the first thermoelectric body 900 composed of the first P-type body 901 and the first N-type body 902, a second thermoelectric body 1000. First, the second thermoelectric body 1000 is different from the first thermoelectric body 900. The cross-sectional shape of the second thermoelectric body 1000 parallel to the second direction F2 is a rectangular parallelepiped, and the second direction F2 is perpendicular to the surface of the substrate 100. For example, the cross-sectional dimensions of the rectangular parallelepiped are the same as the first connecting portion 9011 (or the second connecting portion 9013). That is, the second thermoelectric body 1000 does not design the size of the intermediate structure to be narrower. As a result, the heat flux density of the second thermoelectric body 1000 is lower than that of the first thermoelectric body 900, and the temperature gradient generated by the second thermoelectric body 1000 is smaller. Compared with the first thermoelectric body 900, the heat dissipation or heating effect of the second thermoelectric body 1000 is poorer.

[0034] The second thermoelectric body 1000 includes a second P-type body 1001 and a second N-type body 1002 arranged along the first direction F1. The extension directions of the second P-type body 1001 and the second N-type body 1002 intersect with the surface of the substrate 100. The second P-type body 1001 and the second N-type body 1002 are connected. The second P-type body 1001 is also connected to the first electrode T1, and the second N-type body 1002 is also connected to the second electrode T2. The cross-sectional shapes of the second P-type body 1001 and the second N-type body 1002 parallel to the second direction F2 are both rectangular.

[0035] See Figure 5 As shown, the second thermoelectric body 1000 includes a plurality of second P-type bodies 1001 and a plurality of second N-type bodies 1002. Figure 5 As shown, the plurality of second P-type bodies 1001 and the plurality of second N-type bodies 1002 are both disposed inside the substrate 100, and the plurality of second P-type bodies 1001 and the plurality of second N-type bodies 1002 are arranged along a first direction F1 parallel to the surface of the substrate 100. Figure 5 As shown, the second P-type body 1001 and the second N-type body 1002 are vertically arranged inside the substrate 100, that is, the extension direction of the second P-type body 1001 and the second N-type body 1002 intersects with the surface of the substrate 100. Preferably, the extension direction of the second P-type body 1001 and the second N-type body 1002 is perpendicular to the first direction F1. Of course, in some cases, the extension direction of the second P-type body 1001 and the second N-type body 1002 may not be perpendicular to the first direction F1.

[0036] To ensure proper operation of the second thermoelectric body 1000, the plurality of second P-type bodies 1001 and the plurality of second N-type bodies 1002 are alternately arranged along the first direction F1 and form a pair, i.e., the second P-type bodies 1001 and the second N-type bodies 1002 are connected. In practice, the simplest second thermoelectric body 1000 consists of only one connected second P-type body 1001 and one connected second N-type body 1002.

[0037] See Figure 6 As shown, the first thermoelectric body 900 and the second thermoelectric body 1000 are arranged along the first direction F1 , the first thermoelectric body 900 is located in the center area of ​​the substrate 100 , and the second thermoelectric body 1000 is located in the edge area of ​​the substrate 100 .

[0038] In order to make the thermal management of the thermoelectric structure 001 more efficient, the first thermoelectric body 900 and the second thermoelectric body 1000 arranged along the first direction F1 are respectively arranged in different areas of the substrate 100. Considering that the edge area of ​​the device does not contain the active area of ​​the chip, the heat conduction effect is better, while the active area in the middle of the power device is concentrated with heat and heat dissipation is relatively difficult, in one embodiment, refer to Figure 6 As shown, the first dumbbell-shaped thermoelectric body 900 is located in the central area of ​​the substrate 100 to improve the thermal management efficiency of the active area, and the second rectangular thermoelectric body 1000 is located in the edge area of ​​the substrate 100 to reduce the thermoelectric process steps in the edge area, thereby achieving a more efficient device thermal management effect.

[0039] Also, see Figure 6 As shown, when the thermoelectric structure 001 includes both the first thermoelectric body 900 and the second thermoelectric body 1000, in order to be used together with the above-mentioned first thermoelectric body 900, the second P-type body 1001 located in the edge area is also connected to the first electrode T1, and the second N-type body 1002 located in the edge area is also connected to the second electrode T2.

[0040] See Figure 7 As shown, in another embodiment, a plurality of first thermoelectric bodies 900 and second thermoelectric bodies 1000 are provided in the thermoelectric structure 001, and each first thermoelectric body 900 and each second thermoelectric body 1000 are alternately arranged along the first direction F1, and the first P-type body 901, the first N-type body 902, the second P-type body 1001 and the second N-type body 1002 are connected end to end between the first electrode T1 and the second electrode T2.

[0041] It should be noted that the arrangement of the first thermoelectric body 900 and the second thermoelectric body 1000 is not limited to the ones shown in the figure, and other arrangements can be set according to actual needs.

[0042] In the embodiment of the present application, the thermoelectric body further includes: a first conductive connecting portion 1101, a second conductive connecting portion 1102, a third conductive connecting portion 1103, and a fourth conductive connecting portion 1104. The first conductive connecting portion 1101 is connected to the first end of the first P-type body 901 and the first end of the first N-type body 902, the second conductive connecting portion 1102 is connected to the second end of the first P-type body 901 and the second end of the second N-type body 1002, the third conductive connecting portion 1103 is connected to the first end of the second P-type body 1001 and the first end of the second N-type body 1002, and the fourth conductive connecting portion 1104 is connected to the second end of the first N-type body 902 and the second end of the second P-type body 1001.

[0043] In order to better connect the first P-type body 901, the first N-type body 902, the second P-type body 1001 and the second N-type body 1002 end to end between the first electrode T1 and the second electrode T2, the thermoelectric body also includes a first conductive connecting part 1101, a second conductive connecting part 1102, a third conductive connecting part 1103 and a fourth conductive connecting part 1104 that serve as connections.

[0044] For example, see Figure 8 As shown, one end of the first P-type body 901 adjacent to the functional layer 20, i.e., the first end, is connected to one end of the first N-type body 902 adjacent to the functional layer 20, i.e., the first end, through a first conductive connecting portion 1101; one end of the first P-type body 901 facing away from the functional layer 20, i.e., the second end, is connected to one end of the second N-type body 1002 facing away from the functional layer 20, i.e., the second end, through a second conductive connecting portion 1102; the first end of the second P-type body 1001 adjacent to the functional layer 20 and the first end of the second N-type body 1002 adjacent to the functional layer 20 are connected to each other through a third conductive connecting portion 1103; the second end of the second P-type body 1001 facing away from the functional layer 20 and the second end of the first N-type body 902 facing away from the functional layer 20 are connected to each other through a fourth conductive connecting portion 1104.

[0045] The first conductive connection portion 1101 and the third conductive connection portion 1103 are located in the same film layer, the second conductive connection portion 1102 and the fourth conductive connection portion 1104 are located in the same film layer, and the first conductive connection portion 1101 and the second conductive connection portion 1102 are located in different film layers.

[0046] It should be noted that, in order to make the arrangement of the first thermoelectric body 900 and the second thermoelectric body 1000 in the thermoelectric structure 001 more orderly, the first conductive connecting portion 1101 and the third conductive connecting portion 1103 are located in the same film layer. Figure 8As shown, the first conductive connection portion 1101 and the third conductive connection portion 1103 are located in a film layer on one side of the substrate 100 adjacent to the functional layer 20, and the second conductive connection portion 1102 and the fourth conductive connection portion 1104 are located in another different film layer. For example, see Figure 8 As shown, the second conductive connection 1102 and the fourth conductive connection 1104 are located in the film layer on the side of the substrate 100 facing away from the functional layer 20 .

[0047] It should also be noted that, in some embodiments, the above-mentioned first P-type body 901, the first N-type body 902, the second P-type body 1001 and the second N-type body 1002 may also be in direct contact with each other, that is, the first end of the first P-type body 901, the first end of the first N-type body 902, the first end of the second P-type body 1001 and the first end of the second N-type body 1002 are in direct contact; or, the second end of the first P-type body 901, the second end of the first N-type body 902, the second end of the second P-type body 1001 and the second end of the second N-type body 1002 are in direct contact. In this way, the first thermoelectric body 900 and the second thermoelectric body 1000 can be formed without providing the above-mentioned first conductive connecting part 1101, the second conductive connecting part 1102, the third conductive connecting part 1103 and the fourth conductive connecting part 1104.

[0048] In addition, at least one of the first P-type body 901 and the second P-type body 1001 is a P-type Bi 2-x Sb x Te3 or MoS2.

[0049] In the embodiment of the present application, in the first case, the material of the first P-type body 901 can be P-type Bi 2-x Sb x Te3 or MoS2; in the second case, the material of the second P-type body 1001 can be P-type Bi 2-x Sb x Te3 or MoS2; in the third case, the materials of the first P-type body 901 and the second P-type body 1001 can both be P-type Bi 2-x Sb x Te3 or MoS2.

[0050] At least one of the first N-type body 902 and the second N-type body 1002 is N-type Bi2Te 3-x Se x .

[0051] In the embodiment of the present application, in the first case, the material of the first N-type body 902 can be N-type Bi2Te 3-x Se x In the second case, the material of the second N-type body 1002 can be N-type Bi2Te 3-xSe x In the third case, the materials of the first N-type body 902 and the second N-type body 1002 can both be N-type Bi2Te 3-x Se x .

[0052] See Figure 9 As shown, the above semiconductor structure also includes: a temperature sensor and a temperature processor.

[0053] See Figure 8 As shown, the temperature sensor is attached to the surface of the functional layer 20, and the temperature processor is connected to the temperature sensor, the first electrode T1 and the second electrode T2 respectively. The temperature sensor is used to collect the temperature of the functional layer 20, and the temperature processor is used to adjust the voltage of the first electrode T1 and the second electrode T2 according to the temperature collected by the temperature sensor.

[0054] Since the temperature sensor is attached to the surface of the functional layer 20 away from the substrate 100, during implementation, the temperature sensor can collect the temperature of the functional layer 20 and convert the collected temperature of the functional layer 20 into a corresponding electrical signal, and transmit the electrical signal to the temperature processor. The temperature processor can adjust the voltage supplied to the first electrode T1 and the second electrode T2 according to the electrical signal corresponding to the temperature, thereby changing the current flowing through the first electrode T1 and the second electrode T2, and further adjusting the efficiency of heat dissipation or heating of the semiconductor structure.

[0055] See Figure 10 As shown, a heat dissipation structure 1200 is provided on a side of the substrate 100 of the semiconductor structure away from the functional layer 20 .

[0056] In order to better dissipate heat or heat the semiconductor structure, in the embodiment of the present application, in addition to providing the thermoelectric structure 001 in the substrate 100, a heat dissipation structure 1200 may also be provided in the substrate 100, that is, the heat dissipation structure 1200 is bonded to the side of the substrate 100 away from the functional layer 20. For example, the heat dissipation structure 1200 may be a strip-shaped microchannel structure, and part of the heat generated by the semiconductor structure may be dissipated through the heat dissipation structure 1200. Figure 10 The strip microchannel structure shown emits heat to the environment, further optimizing the heat dissipation performance. In addition, the heat dissipation structure can also be a U-shaped microchannel structure. The heat dissipation process is similar to that of the strip microchannel structure, which will not be described here.

[0057] Based on the same inventive concept, an embodiment of the present invention also provides a method for manufacturing a first semiconductor structure. The implementation principle of this manufacturing method is similar to that of the aforementioned semiconductor structure. The specific implementation method of this manufacturing method can be referred to the embodiment of the aforementioned semiconductor structure, and the repeated parts will not be repeated.

[0058] The first method for manufacturing a semiconductor structure provided by the embodiment of the present invention includes the following steps: Figure 11 As shown: S201 : forming a functional layer 20 on a first substrate, wherein the functional layer 20 includes transistors.

[0059] The implementation process may include: using a Chemical Vapor Deposition (CVD) process. The functional layer 20 may be obtained by other methods well known to those skilled in the art, which are not limited here.

[0060] In the embodiment of the present application, multiple epitaxy processes are used to sequentially form a buffer layer 200, a channel layer 300, a barrier layer 400, and a passivation layer 500 on a first substrate. That is, the buffer layer 200, the channel layer 300, the barrier layer 400, and the passivation layer 500 form a functional layer 20. Furthermore, a transistor is provided in the functional layer 20. Here, the functional layer 20 including one transistor is used as an example for explanation. Figure 12 shown.

[0061] It should be noted that the material of the first base is the same as that of the substrate 100 , that is, during the manufacturing process of the semiconductor structure, a portion of the substrate 100 , namely the first base, is manufactured first, and the structure manufactured on the first base is the main structure mainly composed of transistors.

[0062] S202: forming a first P-type body 901 and a first N-type body 902 on the second substrate. The first P-type body 901 is used as an example for description (the first N-type body 902 is similar). The body includes: a first connecting portion 9011, a second connecting portion 9013, and an intermediate connecting portion 9012. The length of the first connecting portion 9011 along the first direction F1 is not equal to the length of the intermediate connecting portion 9012 along the first direction F1. The length of the second connecting portion 9013 along the first direction F1 is equal to the length of the first connecting portion 9011 along the first direction F1. The first P-type body 901 and the first N-type body 902 are arranged along the first direction F1, and the first direction F1 is parallel to the surface of the second substrate. The extension directions of the first P-type body 901 and the first N-type body 902 intersect with the surface of the second substrate. The first P-type body 901 and the first N-type body 902 are connected.

[0063] The specific process may include: forming a first P-type body 901 and a first N-type body 902 on a second base body made of the same material as the substrate 100, for example, referring to Figure 12 As shown in FIG. 1 (a), a second conductive connecting portion 1102 (or a fourth conductive connecting portion 1104) is first formed on the second substrate; Figure 12As shown in FIG. 1( b ), an intermediate connecting portion 9012, a second connecting portion 9013, an intermediate connecting portion 9022, and a second connecting portion 9023 are respectively provided on the side of the second conductive connecting portion 1102 (or the fourth conductive connecting portion 1104 ) away from the second substrate; Figure 12 As shown in FIG. 5( c ), the intermediate connecting portion 9012 , the second connecting portion 9013 , the intermediate connecting portion 9022 and the second connecting portion 9023 are filled and covered with the same material as the first substrate; Figure 12 As shown in FIG. 5(d), a first connecting portion 9011 and a first connecting portion 9021 are provided on the side of the intermediate connecting portion 9012 away from the passivation layer 500, thereby forming a dumbbell-shaped first P-type body 901 and a first N-type body 902. The gap between the first P-type body 901 and the first N-type body 902 is filled with the same material as the second base until both the first P-type body 901 and the first N-type body 902 are provided inside the second base; see FIG. Figure 12 As shown in FIG. 5( e ), a first conductive connection portion 1101 is formed on a side of the first P-type body 901 and the first N-type body 902 away from the second conductive connection portion 1102 (or the fourth conductive connection portion 1104 ); Figure 12 As shown in Figure (f), the gaps between the first conductive connection parts 1101 are continuously filled with the same material as the second substrate until the first conductive connection parts 1101 are completely covered. The first P-type body 901 and the first N-type body 902 are connected via the first conductive connection parts 1101 and the second conductive connection parts 1102 (or the fourth conductive connection parts 1104).

[0064] Thus, a first P-type body 901 and a first N-type body 902 are formed on the second substrate, arranged along a first direction, where the first direction is parallel to the surface of the second substrate. Furthermore, the extending directions of the first P-type body 901 and the first N-type body 902 intersect with the surface of the second substrate.

[0065] S203 : bonding a surface of the second substrate on which the first P-type body 901 and the first N-type body 902 are formed to a surface of the first substrate facing away from the functional layer 20 . The first substrate and the second substrate constitute the substrate 100 .

[0066] The specific process may include: forming a main structure mainly composed of transistors on a first substrate, and forming a thermoelectric structure 001 composed of a first P-type body 901 and a first N-type body 902 on a second substrate, and then Figure 12 As shown in FIG. 1 , the surface of the second substrate on which the first P-type body 901 and the first N-type body 902 are formed is further bonded to the surface of the first substrate on which the functional layer 20 is away. That is, the first substrate and the second substrate made of the same material are combined into one to form the substrate 100.

[0067] S204 : forming a first electrode T1 and a second electrode T2 on the functional layer 20 , wherein the first electrode T1 is connected to the first P-type body 901 , and the second electrode T2 is connected to the first N-type body 902 .

[0068] The specific process may include: Figure 12 As shown in Figure (h), two through-holes are first formed in the substrate 100 and functional layer 20 using a TSV microvia process. Metal is then deposited in each of the two through-holes until it reaches the device surface. The first electrode T1 and the second electrode T2 of the thermoelectric structure 001 are then led out from the device surface via the two through-holes. Specifically, the first electrode T1 and the second electrode T2 are formed on the side of the functional layer 20 facing away from the substrate 100. To provide heat dissipation or heating for the thermoelectric structure 001, the first electrode T1 is connected to the first P-type body 901, and the second electrode T2 is connected to the first N-type body 902. Metal deposition is then used to form the transistor's source 600, gate 700, and drain 800, thus completing the fabrication of the entire semiconductor structure.

[0069] Based on the same inventive concept, an embodiment of the present invention also provides a second method for manufacturing a semiconductor structure. The implementation principle of this manufacturing method is similar to that of the aforementioned semiconductor structure. The specific implementation method of this manufacturing method can be found in the embodiment of the aforementioned semiconductor structure, and the repeated parts will not be repeated.

[0070] The second method for manufacturing a semiconductor structure provided by the embodiment of the present invention includes the following steps: Figure 13 As shown: S301 : forming a functional layer 20 on a first substrate, wherein the functional layer 20 includes transistors.

[0071] The implementation process may include: using a Chemical Vapor Deposition (CVD) process. The functional layer 20 may be obtained by other methods well known to those skilled in the art, which are not limited here.

[0072] In the embodiments of this application, for example, see Figure 14 As shown in FIG. 1A , a buffer layer 200, a channel layer 300, a barrier layer 400, and a passivation layer 500 are sequentially formed on a first substrate by multiple epitaxy processes. Thus, the buffer layer 200, the channel layer 300, the barrier layer 400, and the passivation layer 500 form a functional layer 20. Furthermore, a transistor is provided in the functional layer 20. Here, the functional layer 20 including one transistor is used as an example for explanation. Figure 14 shown.

[0073] It should be noted that the material of the first base is the same as that of the substrate 100 , that is, during the manufacturing process of the semiconductor structure, a portion of the substrate 100 , namely the first base, is manufactured first, and the structure manufactured on the first base is the main structure mainly composed of transistors.

[0074] S302: A first P-type body 901 and a first N-type body 902 are formed on a side of the first substrate away from the functional layer 20. The first P-type body 901 is used as an example for description (the first N-type body 902 is similar). The body includes: a first connecting portion 9011, a second connecting portion 9013, and an intermediate connecting portion 9012. The length of the first connecting portion 9011 along the first direction F1 is not equal to the length of the intermediate connecting portion 9012 along the first direction F1. The length of the second connecting portion 9013 along the first direction F1 is equal to the length of the first connecting portion 9011 along the first direction F1. The first P-type body 901 and the first N-type body 902 are arranged along the first direction F1, and the first direction F1 is parallel to the surface of the first substrate. The extension directions of the first P-type body 901 and the first N-type body 902 intersect with the surface of the first substrate. The first P-type body 901 and the first N-type body 902 are connected.

[0075] The specific process may include: forming a first P-type body 901 and a first N-type body 902 on a side of a first base body made of the same material as the substrate 100 away from the functional layer 20, for example, referring to FIG. Figure 14 As shown in FIG. 1B , a second conductive connection portion 1102 (or a fourth conductive connection portion 1104 ) is first formed on the first substrate; Figure 14 As shown in FIG. 1(C), an intermediate connecting portion 9012, a second connecting portion 9013, an intermediate connecting portion 9022 and a second connecting portion 9023 are respectively provided on the side of the second conductive connecting portion 1102 (or the fourth conductive connecting portion 1104) away from the first substrate; Figure 14 As shown in FIG. 2 (D), the intermediate connecting portion 9012, the second connecting portion 9013, the intermediate connecting portion 9022 and the second connecting portion 9023 are filled and covered with the same material as the first substrate; Figure 14 As shown in FIG. 5(E), a first connecting portion 9011 and a first connecting portion 9021 are provided on the side of the intermediate connecting portion 9012 away from the passivation layer 500, thereby forming a dumbbell-shaped first P-type body 901 and a first N-type body 902. The gap between the first P-type body 901 and the first N-type body 902 is filled with the same material as the first base until both the first P-type body 901 and the first N-type body 902 are provided inside the first base; see FIG. Figure 14As shown in FIG. 5(F) , a first conductive connection portion 1101 is formed on a side of the first P-type body 901 and the first N-type body 902 away from the second conductive connection portion 1102 (or the fourth conductive connection portion 1104 ), and the first P-type body 901 and the first N-type body 902 are connected via the first conductive connection portion 1101 and the second conductive connection portion 1102 (or the fourth conductive connection portion 1104 ).

[0076] Thus, a first P-type body 901 and a first N-type body 902 are formed on the first substrate, arranged along a first direction, where the first direction is parallel to the surface of the first substrate. Furthermore, the extending directions of the first P-type body 901 and the first N-type body 902 intersect with the surface of the first substrate.

[0077] S303 : forming a second base on a surface of the first base on which the first P-type body 901 and the first N-type body 902 are formed. The first base and the second base constitute the substrate 100 .

[0078] The specific process may include: For example, see Figure 14 As shown in Figure (G), the second substrate made of the same material as the first substrate is used to cover each first conductive connection part 1101, that is, the second substrate is formed on the side surface of the first substrate where the first P-type body 901 and the first N-type body 902 are formed. Since the materials of the above-mentioned first substrate and the second substrate are the same, the above-mentioned first substrate and the second substrate constitute the substrate 100.

[0079] S304 : forming a first electrode T1 and a second electrode T2 on a side of the functional layer 20 away from the substrate 100 , wherein the first electrode T1 is connected to the first P-type body 901 , and the second electrode T2 is connected to the first N-type body 902 .

[0080] The specific process may include: Figure 14 As shown in Figure (H), the first substrate is inverted, and two through-holes are formed in the substrate 100 and functional layer 20 using a TSV microvia process. Metal is then deposited in each of the two through-holes until it reaches the device surface. The first electrode T1 and the second electrode T2 of the thermoelectric structure 001 are then led out of the device surface through the two through-holes. Specifically, the first electrode T1 and the second electrode T2 are formed on the side of the functional layer 20 facing away from the substrate 100. To provide heat dissipation or heating for the thermoelectric structure 001, the first electrode T1 is connected to the first P-type body 901, and the second electrode T2 is connected to the first N-type body 902. Metal deposition is then used to form the transistor's source 600, gate 700, and drain 800, thus completing the fabrication of the entire semiconductor structure.

[0081] Based on the same inventive concept, see Figure 15As shown, an embodiment of the present application provides an electronic device, including: a semiconductor structure as described above.

[0082] The specific application scenarios of the above-mentioned electronic devices include but are not limited to: on-board chips, high-voltage inverters, charging piles, high-voltage photovoltaics, etc.

[0083] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A semiconductor structure, characterized in that include: A substrate and a functional layer provided on the substrate, wherein the functional layer includes a transistor; The semiconductor structure further includes a thermoelectric structure, which includes a first electrode, a second electrode, and a first thermoelectric body, wherein the first electrode and the second electrode are respectively arranged on a side of the functional layer away from the substrate, and the first thermoelectric body is arranged in the substrate; The first thermoelectric body includes a first P-type body and a first N-type body arranged along a first direction, and the first direction is parallel to the substrate surface; the extension directions of the first P-type body and the first N-type body intersect with the substrate surface; the first P-type body and the first N-type body are connected, the first P-type body is also connected to the first electrode, and the first N-type body is also connected to the second electrode, and the first P-type body and the first N-type body each include: a first connecting portion, a second connecting portion and an intermediate connecting portion, the length of the first connecting portion along the first direction is not equal to the length of the intermediate connecting portion along the first direction, and the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction.

2. The semiconductor structure according to claim 1, wherein The thermoelectric structure further includes a second thermoelectric body, wherein the second thermoelectric body is disposed in the substrate; The second thermoelectric body includes a second P-type body and a second N-type body arranged along the first direction, and the extension direction of the second P-type body and the second N-type body intersects with the surface of the substrate; the second P-type body and the second N-type body are connected, the second P-type body is also connected to the first electrode, and the second N-type body is also connected to the second electrode. The cross-sectional shapes of the second P-type body and the second N-type body parallel to the second direction are both rectangular parallelepipeds, and the second direction is perpendicular to the surface of the substrate.

3. The semiconductor structure according to claim 2, wherein: The first thermoelectric body and the second thermoelectric body are arranged along the first direction, the first thermoelectric body is located in the central area of ​​the substrate, and the second thermoelectric body is located in the edge area of ​​the substrate; or There are multiple first thermoelectric bodies and multiple second thermoelectric bodies, and the first thermoelectric bodies and the second thermoelectric bodies are alternately arranged along the first direction. The first P-type body, the first N-type body, the second P-type body and the second N-type body are connected end to end between the first electrode and the second electrode.

4. The semiconductor structure according to claim 1, wherein: A ratio between a length of the first connecting portion along the first direction and a length of the intermediate connecting portion along the first direction is between 2:1 and 4:

1.

5. The semiconductor structure according to claim 3, wherein: The thermoelectric body further comprises: a first conductive connecting portion, a second conductive connecting portion, a third conductive connecting portion and a fourth conductive connecting portion; The first conductive connection portion is connected to the first end of the first P-type body and the first end of the first N-type body; the second conductive connection portion is connected to the second end of the first P-type body and the second end of the second N-type body; the third conductive connection portion is connected to the first end of the second P-type body and the first end of the second N-type body; the fourth conductive connection portion is connected to the second end of the first N-type body and the second end of the second P-type body; The first conductive connection portion and the third conductive connection portion are located in the same film layer, the second conductive connection portion and the fourth conductive connection portion are located in the same film layer, and the first conductive connection portion and the second conductive connection portion are located in different film layers.

6. The semiconductor structure according to claim 2, wherein: At least one of the first P-type body and the second P-type body is a P-type Bi 2-x Sb x Te3 or MoS2; At least one of the first N-type body and the second N-type body is N-type Bi2Te 3-x Se x .

7. The semiconductor structure according to claim 1, wherein: Also includes: Temperature sensor and temperature processor; The temperature sensor is attached to a surface of the functional layer away from the substrate, and the temperature processor is connected to the temperature sensor, the first electrode, and the second electrode respectively; The temperature sensor is used to collect the temperature of the functional layer; The temperature processor is used to adjust the voltage of the first electrode and the second electrode according to the temperature collected by the temperature sensor.

8. A method for manufacturing a semiconductor structure, characterized in that: include: forming a functional layer on a first substrate, wherein the functional layer includes a transistor; A first P-type body and a first N-type body are formed on a second substrate, each of the first P-type body and the first N-type body comprising: a first connecting portion, a second connecting portion, and an intermediate connecting portion; the length of the first connecting portion along a first direction is unequal to the length of the intermediate connecting portion along the first direction; the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction; the first P-type body and the first N-type body are arranged along a first direction parallel to a surface of the second substrate; the extension directions of the first P-type body and the first N-type body intersect with the surface of the second substrate; the first P-type body and the first N-type body are connected; Bonding a surface of the second base body on which the first P-type body and the first N-type body are formed to a surface of the first base body facing away from the functional layer, wherein the first base body and the second base body constitute a substrate; A first electrode and a second electrode are formed on the functional layer, wherein the first electrode is connected to the first P-type body, and the second electrode is connected to the first N-type body.

9. A method for manufacturing a semiconductor structure, characterized in that: include: forming a functional layer on a first substrate, wherein the functional layer includes a transistor; A first P-type body and a first N-type body are formed on a side of the first substrate away from the functional layer, each of the first P-type body and the first N-type body comprising: a first connecting portion, a second connecting portion, and an intermediate connecting portion; the length of the first connecting portion along a first direction is not equal to the length of the intermediate connecting portion along the first direction; the length of the second connecting portion along the first direction is equal to the length of the first connecting portion along the first direction; the first P-type body and the first N-type body are arranged along a first direction parallel to a surface of the first substrate; the extension directions of the first P-type body and the first N-type body intersect with the surface of the first substrate; the first P-type body and the first N-type body are connected; A second base is formed on one side of the first base where the first P-type body and the first N-type body are formed, and the first base and the second base constitute a substrate; A first electrode and a second electrode are formed on a side of the functional layer away from the substrate, wherein the first electrode is connected to the first P-type body, and the second electrode is connected to the first N-type body.

10. An electronic device, characterized in that: include: The semiconductor structure according to any one of claims 1 to 7.

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