Photosensitive structure, wide-photosensitive-range image sensor and preparation method

Abstract

The invention provides a photosensitive structure, a wide photosensitive range image sensor and a preparation method. The light sensing structure comprises a plurality of light sensing units, at least two light sensing units are made of different materials, and the light sensing wave band of at least one light sensing unit is invisible light, so that the light sensing wave band width of the light sensing structure is larger than the light sensing wave band width of the RGB image sensor. According to the photosensitive structure, the photosensitive wave band of the photosensitive unit made of at least one material is invisible light, so that the photosensitive wave band width of the photosensitive structure can be greater than the photosensitive wave band width of the RGB image sensor, and the photosensitive wave band width of the photosensitive structure is increased; the photosensitive wave band width of the photosensitive structure can be larger than that of the RGB image sensor, and the wide photosensitive range is achieved.

Description

Technical Field

[0001] The present application relates to the technical field of photosensitive structures, and in particular to a photosensitive structure, a wide-sensitivity-range image sensor, and a preparation method thereof. Background Art

[0002] Image sensing technology is a key component of modern information acquisition and is widely used in consumer electronics, industrial inspection, security monitoring, autonomous driving, biomedical imaging, and many other fields. Among them, image sensors such as CMOS image sensors have become the mainstream solution in the current market due to their mature technology, controllable costs, and high integration.

[0003] Image sensors mainly include a photosensitive structure and a light filtering structure. The photosensitive structure in related technologies has the problem of a narrow photosensitive range and limited information acquisition. Summary of the Invention

[0004] The embodiments of the present application provide a photosensitive structure, an image sensor with a wide photosensitive range, and a preparation method thereof.

[0005] In a first aspect, an embodiment of the present application provides a photosensitive structure comprising a plurality of photosensitive units, at least two of the photosensitive units being made of different materials, and at least one of the photosensitive units having a photosensitive band of invisible light, so that the photosensitive band width of the photosensitive structure is greater than the photosensitive band width of the RGB image sensor.

[0006] In one embodiment, the plurality of photosensitive units are distributed in a matrix.

[0007] In one embodiment, the plurality of photosensitive units include a first photosensitive unit, a second photosensitive unit, a third photosensitive unit, a fourth photosensitive unit, and a fifth photosensitive unit, wherein along a first direction, the first photosensitive unit, the second photosensitive unit, and the third photosensitive unit are connected in sequence, and along a second direction, the fourth photosensitive unit, the second photosensitive unit, and the fifth photosensitive unit are connected in sequence, and the first direction and the second direction are perpendicular to each other; or

[0008] The plurality of photosensitive units are distributed in a cross shape.

[0009] In one embodiment, the material of the photosensitive unit includes at least one of indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenic antimony, gallium nitride, aluminum nitride, aluminum gallium nitride, silicon oxide, silicon carbide and zinc oxide.

[0010] In one embodiment, the photosensitive structure has a photosensitive wavelength range of 200 nm to 14600 nm.

[0011] In one embodiment, the photosensitive structure includes an RGB photosensitive component and an invisible light photosensitive component connected in sequence, the RGB photosensitive component includes a red photosensitive unit, a green photosensitive unit and a blue photosensitive unit, and the red photosensitive unit, the green photosensitive unit, the blue photosensitive unit and the invisible light photosensitive component are connected in sequence.

[0012] In one embodiment, the red photosensitive unit, the green photosensitive unit, the blue photosensitive unit, and the invisible light photosensitive component are arranged to form a square photosensitive area.

[0013] In one embodiment, a mounting area is formed at an included angle between the red photosensitive unit and the blue photosensitive unit, and the invisible light photosensitive component is disposed in the mounting area.

[0014] In one embodiment, the invisible light sensing component includes at least one of an infrared sensing unit and an ultraviolet sensing unit.

[0015] In a second aspect, an embodiment of the present application provides an image sensor with a wide sensitivity range, comprising the photosensitive structure as described above.

[0016] In one embodiment, the wide-sensitivity-range image sensor includes a plurality of the photosensitive structures, and the plurality of the photosensitive structures are spliced ​​together.

[0017] In a third aspect, an embodiment of the present application provides a method for preparing a photosensitive structure, comprising:

[0018] Obtaining a substrate;

[0019] A plurality of photosensitive units are constructed in different areas of the substrate, wherein the plurality of photosensitive units include at least two different materials, and the photosensitive band of at least one photosensitive unit is invisible light, so as to form a photosensitive structure with a photosensitive band width greater than a visible light band width.

[0020] In one embodiment, the step of constructing a plurality of photosensitive units in different areas of the substrate includes:

[0021] A photosensitive unit made of a first material is constructed in the first area of ​​the substrate, and a photosensitive unit made of a second material is constructed in the second area of ​​the substrate.

[0022] In a fourth aspect, an embodiment of the present application provides a method for preparing a photosensitive structure, comprising:

[0023] Get the RGB photosensitive layer;

[0024] clearing the RGB photosensitive material at the target area of ​​the RGB photosensitive layer;

[0025] The target area is filled with a target photosensitive material, where the target photosensitive material can capture invisible light, so that the photosensitive band width of the RGB photosensitive layer is greater than the photosensitive band width of the RGB image sensor.

[0026] In one embodiment, the RGB photosensitive layer includes a red photosensitive unit, a first green photosensitive unit, a second green photosensitive unit, and a blue photosensitive unit; and the step of removing the RGB photosensitive material at the target area of ​​the RGB photosensitive layer includes:

[0027] The photosensitive material at the second green photosensitive unit is cleared.

[0028] In a fifth aspect, an embodiment of the present application provides a method for preparing an image sensor with a wide sensitivity range, comprising:

[0029] Get the RGB photosensitive chip;

[0030] clearing the filter material and the RGB photosensitive material at the target area of ​​the RGB photosensitive chip;

[0031] Filling the target area with a target material, wherein the target material is different from the RGB photosensitive material, so that the photosensitive band range of the RGB photosensitive chip is larger than the visible light band;

[0032] A filter layer is constructed on the target material, and the filter layer is used to filter light entering the target material, wherein the wavelength band of light that can pass through the filter layer is different from the wavelength band of light that can pass through the filter material.

[0033] In a sixth aspect, an embodiment of the present application provides an electronic device comprising the photosensitive structure as described above.

[0034] Beneficial effects of the embodiments of the present application:

[0035] In an embodiment of the present application, the photosensitive structure includes at least two photosensitive units made of different materials, and the photosensitive units of different materials have different photosensitive ranges, that is, the photosensitive structure includes at least two photosensitive units with different photosensitive ranges, and the photosensitive band of at least one of the materials of the photosensitive units is invisible light, so that the photosensitive band width of the photosensitive structure can be greater than the photosensitive band width of the RGB image sensor, thereby increasing the photosensitive band width of the photosensitive structure, so that the photosensitive band width of the photosensitive structure can be greater than the photosensitive band width of the RGB image sensor, thereby achieving a wide photosensitive range. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0037] Figure 1 This is one of the structural schematic diagrams of the photosensitive structure provided in the embodiments of the present application;

[0038] Figure 2 This is the second structural diagram of the photosensitive structure provided in the embodiment of the present application;

[0039] Figure 3 1 is a schematic structural diagram of a cross-shaped photosensitive structure provided in an embodiment of the present application;

[0040] Figure 4 The photosensitive structure provided in the embodiment of the present application is distributed in a matrix;

[0041] Figure 5 Schematic diagram of the structure of the photosensitive structure provided by the embodiment of the present application, in which the wavelength range and material of each photosensitive unit are marked;

[0042] Figure 6 This is a flow chart of a method for preparing a photosensitive structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0044] The following combination Figures 1 to 6 The present invention describes a photosensitive structure, a wide-sensitivity-range image sensor, and a manufacturing method thereof.

[0045] According to the embodiment of the first aspect of the present application, Figure 1 and Figure 2The photosensitive structure includes multiple photosensitive units 1, at least two photosensitive units 1 are made of different materials, and the photosensitive band of at least one photosensitive unit 1 is invisible light, so that the photosensitive band width of the photosensitive structure is greater than the photosensitive band width of the RGB image sensor.

[0046] According to the photosensitive structure of the embodiment of the present application, the photosensitive structure includes at least two photosensitive units 1 made of different materials, and the photosensitive ranges of the photosensitive units 1 of different materials are different, that is, the photosensitive structure includes at least two photosensitive units 1 with different photosensitive ranges, and the photosensitive band of at least one of the materials of the photosensitive units 1 is invisible light, so that the photosensitive band width of the photosensitive structure can be greater than the photosensitive band width of the RGB image sensor, thereby increasing the photosensitive band width of the photosensitive structure, and making the photosensitive band width of the photosensitive structure greater than the photosensitive band width of the RGB image sensor, realizing a wide photosensitive range, and effectively increasing the information obtained by the photosensitive structure.

[0047] It should be noted that the photosensitivity band width of the photosensitive structure is greater than the photosensitivity band width of the RGB image sensor, which may mean that the photosensitivity band width of the photosensitive structure includes the photosensitivity range of the RGB image sensor and the photosensitivity range of the non-RGB image sensor.

[0048] The photosensitivity band width of the photosensitive structure is greater than the photosensitivity band width of the RGB image sensor, which may also mean that the photosensitivity range of the photosensitive structure may include part of the photosensitivity range of the RGB image sensor, or may not include the photosensitivity range of the RGB image sensor.

[0049] In some examples, the photosensitive structure may include two photosensitive units 1, and the materials of the two photosensitive units 1 are different. The photosensitive structure may also include three or more photosensitive units 1, and at least two photosensitive units 1 in the photosensitive structure are made of different materials.

[0050] It should be noted that the different materials of the photosensitive units 1 may refer to that the materials of the different photosensitive units 1 are completely different, or may refer to that the materials of the different photosensitive units 1 are partially different.

[0051] That is to say, the light-sensitive ranges of the light-sensitive units 1 made of different materials may be completely different or partially different.

[0052] It is understood that the photosensitive structure of the RGB image sensor in the related art has a sensitivity range of R band + G band + B band. However, by utilizing at least two photosensitive units made of different materials, the photosensitive structure can have a wider photosensitive band width than the RGB image sensor, thus achieving a wide photosensitive range.

[0053] In some embodiments, as Figure 4 , multiple photosensitive units 1 are distributed in a matrix.

[0054] It should be noted that the multiple photosensitive units 1 can be distributed in a square matrix or a rectangular matrix.

[0055] In some embodiments, the plurality of photosensitive units 1 are distributed in a cross shape. In other words, the plurality of photosensitive units 1 of the photosensitive structure are distributed in a cross shape, which is conducive to the splicing between the plurality of photosensitive structures.

[0056] It should be noted that the number of photosensitive units 1 on both sides of the photosensitive structure may be equal or unequal. In other words, the number of photosensitive units 1 on one side of the photosensitive structure may be greater than the number of photosensitive units 1 on the other side.

[0057] In some embodiments, as Figure 3 The multiple photosensitive units 1 include a first photosensitive unit 11, a second photosensitive unit 12, a third photosensitive unit 13, a fourth photosensitive unit 14 and a fifth photosensitive unit 15, wherein along the first direction, the first photosensitive unit 11, the second photosensitive unit 12 and the third photosensitive unit 13 are connected in sequence, and along the second direction, the fourth photosensitive unit 14, the second photosensitive unit 12 and the fifth photosensitive unit 15 are connected in sequence, and the first direction and the second direction are perpendicular to each other.

[0058] That is to say, with the second photosensitive unit 12 as the center, the first photosensitive unit 11, the third photosensitive unit 13, the fourth photosensitive unit 14 and the fifth photosensitive unit 15 are arranged around the second photosensitive unit 12, wherein the first photosensitive unit 11 and the third photosensitive unit 13 are arranged opposite to each other, and the fourth photosensitive unit 14 and the fifth photosensitive unit 15 are arranged opposite to each other, so that the multiple photosensitive units 1 are distributed in a "cross" structure, which facilitates the mutual splicing between different photosensitive structures.

[0059] It should be noted that this embodiment is only illustrated by taking five photosensitive units 1 as an example, and does not impose any particular limitation on the number of photosensitive units 1. For example, the number of the first photosensitive unit 11, the third photosensitive unit 13, the fourth photosensitive unit 14, and the fifth photosensitive unit 15 can be two or more.

[0060] In some embodiments, as Figure 5 The material of the photosensitive unit 1 includes at least one of indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenic antimony, gallium nitride, aluminum nitride, aluminum gallium nitride, silicon oxide, silicon carbide, and zinc oxide. In other words, at least two different materials in the at least two photosensitive units 1 of different materials can be any two of indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenic antimony, gallium nitride, aluminum nitride, aluminum gallium nitride, silicon carbide, and zinc oxide.

[0061] For example, the photosensitive unit 1 with a photosensitive band of 200nm to 400nm can be made of gallium nitride. The photosensitive unit 1 with a photosensitive band of 460nm to 650nm can be made of silicon dioxide. The photosensitive unit 1 with a photosensitive band of 850nm to 1700nm can be made of indium gallium arsenide. The photosensitive unit 1 with a photosensitive band of 2000nm to 5000nm can be made of mercury cadmium telluride. The photosensitive unit 1 with a photosensitive band of 8000nm to 1400nm can be made of indium antimonide.

[0062] In some embodiments, the photosensitivity band of the photosensitive structure is 200nm to 14600nm, so that the photosensitivity range of the photosensitive structure is 200nm to 14600nm, and thus the photosensitivity band width of the photosensitive structure is greater than the photosensitivity band width of the RGB image sensor, achieving a wide photosensitivity range.

[0063] In one embodiment of the present application, Figure 1 The photosensitive structure includes an RGB photosensitive component 2 and an invisible light photosensitive component 3 connected in sequence. The RGB photosensitive component 2 is used to convert light in the red band, green band and blue band into electrical signals, and the invisible light photosensitive component 3 is used to convert light in the target band into electrical signals. The target band is different from the photosensitive band of the RGB photosensitive component 2.

[0064] It is understandable that the photosensitive band of the RGB photosensitive component 2 is the visible light band, and the photosensitive band of the invisible light photosensitive component 3 is the target band, which is different from the photosensitive band of the RGB photosensitive component 2. In other words, the photosensitive band of the photosensitive structure including the RGB photosensitive component 2 and the invisible light photosensitive component 3 includes both the visible light band and the target band, that is, the photosensitive band width of the photosensitive structure is greater than the photosensitive band width of the RGB image sensor, so that the photosensitive structure can achieve a wide photosensitive range.

[0065] In some examples, the target wavelength band is, for example, an invisible light band.

[0066] In one embodiment of the present application, Figure 1 The RGB photosensitive component 2 includes a red photosensitive unit 21, a green photosensitive unit 22 and a blue photosensitive unit 23, and the red photosensitive unit 21, the green photosensitive unit 22, the blue photosensitive unit 23 and the invisible light photosensitive component 3 are connected in sequence.

[0067] It can be understood that the red photosensitive unit 21, the green photosensitive unit 22, the blue photosensitive unit 23 and the invisible light photosensitive component 3 are connected in sequence to form a photosensitive structure, which increases the photosensitive band range of the photosensitive structure.

[0068] Specifically, the red photosensitive unit 21 , the green photosensitive unit 22 , the blue photosensitive unit 23 and the invisible light photosensitive component 3 are arranged to form a square photosensitive area.

[0069] It is understood that the RGB photosensitive structure in the related art generally includes an R photosensitive unit, a B photosensitive unit, and two G photosensitive units, with the R photosensitive unit and the B photosensitive unit arranged diagonally, and the two G photosensitive units arranged diagonally. By replacing one of the G photosensitive units with the invisible light photosensitive component 3, the red photosensitive unit 21, the green photosensitive unit 22, the blue photosensitive unit 23, and the invisible light photosensitive component 3 form a square photosensitive area, thereby making the photosensitive range of the photosensitive structure include both the visible light band and the invisible light band.

[0070] Specifically, a mounting area is formed at the angle between the red photosensitive unit 21 and the blue photosensitive unit 23 , and the invisible light photosensitive component 3 is disposed in the mounting area.

[0071] It can be understood that one of the G photosensitive units 1 of the RGB photosensitive structure in the related art is eliminated by etching or any other suitable method to form an installation area, thereby facilitating the setting of the invisible light photosensitive component 3, so that the invisible light photosensitive component 3 can be connected to the RGB photosensitive component 2 to form a photosensitive structure.

[0072] Specifically, the invisible light sensing component 3 includes at least one of an infrared sensing unit and an ultraviolet sensing unit.

[0073] It is understandable that when the invisible light sensing component 3 includes an infrared photosensitive unit, the photosensitive band of the photosensitive structure includes the infrared band, so that the photosensitive band width of the photosensitive structure is greater than the photosensitive band width of the RGB image sensor.

[0074] When the invisible light sensing component 3 includes an ultraviolet light sensing unit, the photosensitive band of the photosensitive structure includes the ultraviolet band, so that the photosensitive band width of the photosensitive structure is greater than the photosensitive band width of the RGB image sensor.

[0075] According to an embodiment of the second aspect of the present application, a wide-sensitivity-range image sensor includes the above-mentioned photosensitive structure.

[0076] According to the wide-sensitivity-range image sensor of the embodiment of the present application, the photosensitive structure includes at least two photosensitive units 1 made of different materials, and the photosensitive units 1 of different materials have different photosensitive ranges, that is, the photosensitive structure includes at least two photosensitive units 1 with different photosensitive ranges, and the photosensitive band of at least one of the materials of the photosensitive units 1 is invisible light, thereby making the photosensitive band width of the photosensitive structure larger than the photosensitive band width of the RGB image sensor, thereby increasing the photosensitive band width of the photosensitive structure, making the photosensitive band width of the photosensitive structure larger than the photosensitive band width of the RGB image sensor, and realizing a wide photosensitive range.

[0077] In some examples, a wide-sensitivity-range image sensor includes multiple photosensitive structures that are spliced ​​together.

[0078] According to an embodiment of the third aspect of the present application, Figure 6 , a method for preparing a photosensitive structure, including.

[0079] Step 101: Obtain a substrate;

[0080] Step 102: construct multiple photosensitive units in different areas of the substrate, wherein the multiple photosensitive units include at least two different materials, and the photosensitive band of at least one photosensitive unit is invisible light, so as to form a photosensitive structure with a photosensitive band width greater than the visible light band width.

[0081] It can be understood that by constructing at least two photosensitive units of different materials in different areas of the substrate, the photosensitive units of different materials have different photosensitive ranges, that is, the photosensitive structure includes at least two photosensitive units with different photosensitive ranges. At the same time, the photosensitive band of one of the materials is an invisible light band, so that the photosensitive band width of the photosensitive structure can be greater than the photosensitive band width of the RGB image sensor, thereby achieving a wide photosensitive range.

[0082] In some embodiments, the step of constructing a plurality of photosensitive units in different areas of the substrate includes:

[0083] A photosensitive unit made of a first material is constructed in the first area of ​​the substrate, and a photosensitive unit made of a second material is constructed in the second area of ​​the substrate.

[0084] It is understood that the photosensitive units are constructed in different regions of the substrate to form a photosensitive structure. The materials of the photosensitive units in the first and second regions are different, and the photosensitive structure includes at least two photosensitive units of different materials. The photosensitive units of different materials have different photosensitive ranges, that is, the photosensitive structure includes at least two photosensitive units with different photosensitive ranges. This allows the photosensitive structure to have a photosensitive band width greater than the photosensitive band width of the RGB image sensor. This increases the photosensitive band width of the photosensitive structure, allowing the photosensitive structure to have a photosensitive range greater than visible light, thus achieving a wide photosensitive range.

[0085] According to an embodiment of the fourth aspect of the present application, a method for preparing a photosensitive structure includes:

[0086] Get the RGB photosensitive layer;

[0087] clearing the RGB photosensitive material at the target area of ​​the RGB photosensitive layer;

[0088] The target area is filled with a target photosensitive material that can capture invisible light, so that the photosensitive band width of the RGB photosensitive layer is greater than the photosensitive band width of the RGB image sensor.

[0089] It can be understood that this embodiment directly obtains an RGB photosensitive layer as a substrate, then removes the RGB photosensitive material at the target area of ​​the RGB photosensitive layer, and then fills the target area with the target photosensitive material. The target photosensitive material is different from the RGB photosensitive material. The photosensitive range of photosensitive units of different materials is different. The target photosensitive material can obtain invisible light, so the photosensitive range of the photosensitive unit at the target area and the RGB photosensitive unit in other areas will be different. The photosensitive range of the prepared photosensitive structure includes both visible light and invisible light, which expands the photosensitive band width of the RGB photosensitive layer, making the photosensitive band width of the RGB photosensitive layer greater than the visible light band width, increasing the photosensitive range of the photosensitive structure, and making the photosensitive range of the photosensitive structure greater than visible light, thereby achieving a wide photosensitive range.

[0090] Furthermore, this embodiment directly uses the existing RGB photosensitive layer to form the photosensitive structure, thereby realizing the reuse of the existing RGB photosensitive layer, which is beneficial to simplifying the preparation process and reducing costs.

[0091] It is understandable that the RGB photosensitive material at the target area of ​​the RGB photosensitive layer can be removed by etching or any other suitable process.

[0092] In some embodiments, the RGB photosensitive layer includes a red photosensitive unit, a first green photosensitive unit, a second green photosensitive unit, and a blue photosensitive unit; and the step of clearing the RGB photosensitive material at the target area of ​​the RGB photosensitive layer includes:

[0093] The photosensitive material at the second green photosensitive unit is cleared.

[0094] It is understandable that the photosensitive material at the second green photosensitive unit is removed, that is, the area where the second green photosensitive unit is located is the target area. Then, the target area is filled with the target material to form a new photosensitive unit in the target area. Since the target material is different from the RGB photosensitive material, the sensitivity range of the new photosensitive unit is invisible light, thereby obtaining a photosensitive structure with a wide sensitivity range and realizing the reuse of the RGB photosensitive layers, which is conducive to simplifying the preparation process and reducing costs.

[0095] According to an embodiment of the fifth aspect of the present application, a method for preparing an image sensor with a wide sensitivity range includes:

[0096] Get the RGB photosensitive chip;

[0097] Clear the filter material and RGB photosensitive material at the target area of ​​the RGB photosensitive chip;

[0098] A target material is filled in the target area, where the target material is different from the RGB photosensitive material, so that the photosensitive band range of the RGB photosensitive chip is larger than the visible light band.

[0099] It can be understood that, with the RGB photosensitive chip as the substrate, the filter material and the RGB photosensitive material in the target area of ​​the RGB photosensitive chip are removed, and then the target area is filled with the target material. Since the target material is different from the RGB photosensitive material, the photosensitive range of the photosensitive unit 1 formed in the target area is not within the visible light range, and thus the prepared wide-sensitivity range image sensor has a photosensitive range that includes both visible light and invisible light, thereby achieving a wide photosensitive range.

[0100] In some examples, after the target area is filled with the target material, a filter layer is formed on the target material to form a complete wide-sensitivity-range image sensor. The filter layer is used to filter light entering the target material, where the wavelength band of light that can pass through the filter layer is different from the wavelength band of light that can pass through the filter material.

[0101] It is understandable that the filter material and the RGB photosensitive material at the target area of ​​the RGB photosensitive chip can be removed by etching or any other suitable process.

[0102] According to an embodiment of the sixth aspect of the present application, an electronic device includes the above-mentioned photosensitive structure.

[0103] According to the electronic device of the embodiment of the present application, the photosensitive structure includes at least two photosensitive units 1 made of different materials, and the photosensitive units 1 of different materials have different photosensitive ranges, that is, the photosensitive structure includes at least two photosensitive units 1 with different photosensitive ranges, so that the photosensitive range of the photosensitive structure can be larger than the photosensitive range of the RGB image sensor. The photosensitive range of the photosensitive structure is increased, so that the photosensitive range of the photosensitive structure can be larger than the photosensitive range of the RGB image sensor, and the wide-photosensitive-range image sensor can achieve a wide photosensitive range, so that the electronic device can collect information in the visible light band and the invisible light band.

[0104] The above is a detailed introduction to the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for those skilled in the art, based on the ideas of the present application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photosensitive structure, characterized in that: It comprises a plurality of photosensitive units, at least two of which are made of different materials, and at least one of which has a photosensitive band of invisible light, so that the photosensitive band width of the photosensitive structure is greater than the photosensitive band width of the RGB image sensor.

2. The photosensitive structure according to claim 1, wherein: The plurality of photosensitive units are distributed in a matrix.

3. The photosensitive structure according to claim 1, wherein: The plurality of photosensitive units include a first photosensitive unit, a second photosensitive unit, a third photosensitive unit, a fourth photosensitive unit, and a fifth photosensitive unit, wherein along a first direction, the first photosensitive unit, the second photosensitive unit, and the third photosensitive unit are connected in sequence, and along a second direction, the fourth photosensitive unit, the second photosensitive unit, and the fifth photosensitive unit are connected in sequence, and the first direction and the second direction are perpendicular to each other; or The plurality of photosensitive units are distributed in a cross shape.

4. The photosensitive structure according to claim 1, wherein: The material of the photosensitive unit includes at least one of indium gallium arsenide, indium antimonide, mercury cadmium telluride, lead selenide, lead telluride, indium telluride, indium arsenide, indium arsenic antimony, gallium nitride, aluminum nitride, aluminum gallium nitride, silicon oxide, silicon carbide and zinc oxide.

5. The photosensitive structure according to claim 1, wherein: The photosensitive band of the photosensitive structure is 200nm to 14600nm.

6. The photosensitive structure according to any one of claims 1 to 5, characterized in that: The photosensitive structure includes an RGB photosensitive component and an invisible light photosensitive component connected in sequence, the RGB photosensitive component includes a red photosensitive unit, a green photosensitive unit and a blue photosensitive unit, and the red photosensitive unit, the green photosensitive unit, the blue photosensitive unit and the invisible light photosensitive component are connected in sequence.

7. The photosensitive structure according to claim 6, characterized in that: The red photosensitive unit, the green photosensitive unit, the blue photosensitive unit and the invisible light photosensitive component are arranged to form a square photosensitive area.

8. The photosensitive structure according to claim 6, wherein: An installation area is formed at the angle between the red photosensitive unit and the blue photosensitive unit, and the invisible light photosensitive component is arranged in the installation area.

9. The photosensitive structure according to claim 6, wherein: The invisible light sensing component includes at least one of an infrared sensing unit and an ultraviolet sensing unit.

10. An image sensor with a wide sensitivity range, characterized in that: The photosensitive structure comprises the photosensitive structure according to any one of claims 1 to 9.

11. The wide sensitivity range image sensor according to claim 10, wherein: The wide-sensitivity-range image sensor includes a plurality of the photosensitive structures, and the plurality of the photosensitive structures are spliced ​​together.

12. A method for preparing a photosensitive structure, characterized in that: include: Obtaining a substrate; A plurality of photosensitive units are constructed in different areas of the substrate, wherein the plurality of photosensitive units include at least two different materials, and the photosensitive band of at least one photosensitive unit is invisible light, so as to form a photosensitive structure with a photosensitive band width greater than a visible light band width.

13. The method for preparing a photosensitive structure according to claim 12, wherein: The step of constructing a plurality of photosensitive units in different areas of the substrate includes: A photosensitive unit made of a first material is constructed in the first area of ​​the substrate, and a photosensitive unit made of a second material is constructed in the second area of ​​the substrate.

14. A method for preparing a photosensitive structure, characterized in that: include: Get the RGB photosensitive layer; clearing the RGB photosensitive material at the target area of ​​the RGB photosensitive layer; The target area is filled with a target photosensitive material, where the target photosensitive material can capture invisible light, so that the photosensitive band width of the RGB photosensitive layer is greater than the photosensitive band width of the RGB image sensor.

15. The method for preparing a photosensitive structure according to claim 14, wherein: The RGB photosensitive layer includes a red photosensitive unit, a first green photosensitive unit, a second green photosensitive unit, and a blue photosensitive unit; and the step of removing the RGB photosensitive material at the target area of ​​the RGB photosensitive layer includes: The photosensitive material at the second green photosensitive unit is cleared.

16. A method for preparing an image sensor with a wide sensitivity range, characterized in that: include: Get the RGB photosensitive chip; clearing the filter material and the RGB photosensitive material at the target area of ​​the RGB photosensitive chip; Filling the target area with a target material, wherein the target material is different from the RGB photosensitive material, so that the photosensitive band range of the RGB photosensitive chip is larger than the visible light band; A filter layer is constructed on the target material, and the filter layer is used to filter light entering the target material, wherein the wavelength band of light that can pass through the filter layer is different from the wavelength band of light that can pass through the filter material.

17. An electronic device, characterized in that: The invention comprises the wide sensitivity range image sensor as claimed in claim 11 or 12.

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